Ferroelectric and Piezoelectric Effects on the Optical Process in Advanced Materials and Devices

Large-Area Epitaxial Growth of Transition Metal Dichalcogenides

Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.

Well-balanced performance achieved in PZT piezoceramics via a multiscale regulation strategy

Emerging high-power piezoelectric applications demand the development of piezoelectric materials featuring both a high mechanical quality factor (Qm) and a large piezoelectric coefficient (d33). However, it is widely accepted that an increase in d33 is usually accompanied with a decrease in Qm, and vice versa. Herein, a multiscale regulation strategy is proposed to improve Qm and d33 simultaneously from the perspectives of phase structure, ferroelectric domains, and lattice defects. A well-balanced combination of electromechanical performances with Qm = 726, d33 = 502 pC N-1, kp = 0.69, tan δ = 0.0024, and TC = 267 °C was obtained. Through structural characterization, it was observed that the morphotropic phase boundary and enhanced dispersion behavior lead to a lowered energy barrier, which contributes to polarization rotation and enhances piezoelectric performance. At the same time, the excellent piezoelectric performances also benefit from the highly oriented domain structure and small domain size after high-temperature poling. Furthermore, the segregation of Ba2+ causes A-site defects in the crystal lattice, accompanied with an increase in oxygen vacancies, which maintains the hardening effect of the ceramics. This study proposes a multiscale regulation strategy, providing insights for the design of high-power piezoelectric ceramics with high d33 and Qm.

Enhanced photodetection through a perovskite BaTiO3 dielectric in a Si-MoS2 heterojunction

The present investigation deals with the effect of a BaTiO3 (BTO) dielectric layer on the performance of MoS2/p-Si heterojunction photodetectors. The MoS2/p-Si junction demonstrates a responsivity of ∼80 A W-1 and detectivity of ∼1012 Jones. The inclusion of a dielectric BTO layer significantly enhances the performance of MoS2/p-Si photodetectors, leading to a remarkable improvement with a very high responsivity of ∼603 A W-1 and detectivity of ∼1013 Jones. The I-V characteristics of the MoS2/p-Si and MoS2/BTO/p-Si junctions under illumination can be understood by considering their respective energy band diagrams. This addition alters the energy band alignment, leading to higher conduction band offset and valence band offset values. The large photocurrent in forward bias in the MoS2/BTO/p-Si junction may be attributed to the presence of photogenerated electrons in the depletion region of BTO. BTO exhibits characteristics such as a long carrier diffusion length and low recombination rates, contributing to a reduction in carrier recombination within the photodetector for which the photocurrent of the MoS2/BTO/p-Si heterojunction can be improved significantly. The enhanced performance of the MoS2/BTO/p-Si junction, characterized by higher responsivity and detectivity, underscores the potential of this heterojunction for advanced photodetection applications, suggesting promising avenues for further research and development in the field of photodetectors. A comparative study with the available literature reveals that the excellent responsivity of ∼603 A W-1 and detectivity of ∼1013 Jones of the presently studied MoS2/BTO/p-Si heterojunction appear highly promising for various futuristic device applications.

Ultrasensitive Graphene Field-Effect Biosensors Based on Ferroelectric Polarization of Lithium Niobate for Breast Cancer Marker Detection

Herein, we present a novel ultrasensitive graphene field-effect transistor (GFET) biosensor based on lithium niobate (LiNbO3) ferroelectric substrate for the application of breast cancer marker detection. The electrical properties of graphene are varied under the electrostatic field, which is generated through the spontaneous polarization of the ferroelectric substrate. It is demonstrated that the properties of interface between graphene and solution are also altered due to the interaction between the electrostatic field and ions. Compared with the graphene field-effect biosensor based on the conventional Si/SiO2 gate structure, our biosensor achieves a higher sensitivity to 64.7 mV/decade and shows a limit of detection down to 1.7 fM (equivalent to 12 fg·mL-1) on the detection of microRNA21 (a breast cancer marker). This innovative design combining GFETs with ferroelectric substrates holds great promise for developing an ultrahigh-sensitivity biosensing platform based on graphene that enables rapid and early disease diagnosis.

The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications

In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by an external field, which has stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile and electrically switchable feature have exhibited enormous potential in controlling the electronic and optoelectronic properties of 2D materials, leading to an extremely fertile area of research. Here, we review the 2D materials and relevant devices integrated with ferroelectricity. This review starts to introduce the background about the concerned themes, namely 2D materials and ferroelectrics, and then presents the fundamental mechanisms, tuning strategies, as well as recent progress of the ferroelectric effect on the optical and electrical properties of 2D materials. Subsequently, the latest developments of 2D material-based electronic and optoelectronic devices integrated with ferroelectricity are summarized. Finally, the future outlook and challenges of this exciting field are suggested.

Polarization Alignment in Polycrystalline BiFeO3 Photoelectrodes for Tunable Band Bending

Polarization in a semiconductor can modulate the band bending via the depolarization electric field (EdP), subsequently tuning the charge separation and transfer (CST) process in photoelectrodes. However, the random orientation of dipole moments in many polycrystalline semiconductor photoelectrodes leads to negligible polarization effect. How to effectively align the dipole moments in polycrystalline photoelectrodes into the same direction to maximize the polarization is still to be developed. Herein, we report that the dipole moments in a ferroelectric BiFeO3 photoelectrode can be controlled under external poling, resulting in a tunable CST efficiency. A negative bias of -40 voltage (V) poling to the photoelectrode leads to an over 110% increase of the CST efficiency, while poling at +40 V, the CST efficiency is reduced to only 41% of the original value. Furthermore, a nearly linear relationship between the external poling voltage and surface potential is discovered. The findings here provide an effective method in tuning the band bending and charge transfer of the emerging ferroelectricity driven solar energy conversion.

Pyro-Phototronic Effect-Enhanced Photocurrent of a Self-Powered Photodetector Based on ZnO Nanofiber Arrays/BaTiO3 Films

Self-powered photodetectors (PD) based on ferroelectric materials have gained huge attention because of the spontaneous polarization and unique photovoltaic effect. However, the low photocurrent values and switch ratio of the ferroelectric materials limit their further practical applications in a wide temperature range. In this study, the self-powered ZnO nanofiber array/BaTiO3 (ZnO-NFA/BTO) PD was fabricated by high-ordered ZnO-NFA via electrospinning method deposited on a 300 nm BTO film synthesized using sol-gel method. The electrospinning can prepare ZnO-NFAs with a controllable diameter (100 nm) and orientation and is directly deposited on the quartz at a large scale, which simplifies the fabrication process. This device possesses a greater on/off ratio of 2357 at zero bias than that of BTO PD (3.33) and the ZnO-NFA PD (125) at 0.2 V. The highest responsivity and specific detectivity are 1.41 mA W-1 and 1.48 × 109 Jones at 368 nm under 0 V bias, respectively, which is enhanced about three magnitudes than the pristine BTO PD (1.21 μA W-1 and 1.02 × 109 Jones). The photocurrent of the ZnO-NFA/BTO PD strongly depends on the temperature. After the cooling system and prepolarization processing are both introduced, the largest light current (475 nA) and photovoltaic plateaus (585 nA) are enhanced by about 4417 and 4278% under 368 nm at a power intensity of 4.46 mW cm-2 at 0 °C, respectively. The enhancement of photocurrent is associated with a ferro-pyro-phototronic effect, evidenced by enhanced ferroelectric polarization. The ZnO-NFA/BTO PD can detect weak signals at low power intensity with a wide temperature range of 0-100 °C under 0 V bias. The self-powered ZnO-NFA/BTO PD provides a new and promising way to fabricate high-performance and low-cost photodetectors from inorganic perovskite materials.

3D-printed polymer composite devices based on a ferroelectric chiral ammonium salt for high-performance piezoelectric energy harvesting

Three-dimensional printing (3DP) is an emerging technology to fabricate complex architectures, necessary to realize state-of-the-art flexible and wearable electronic devices. In this regard, top-performing devices containing organic ferro- and piezoelectric compounds are desired to circumvent significant shortcomings of conventional piezoceramics, e.g. toxicity and high-temperature device processibility. Herein, we report on a 3D-printed composite of a chiral ferroelectric organic salt {[Me3CCH(Me)NH3][BF4]} (1) with a biodegradable polycaprolactone (PCL) polymer that serves as a highly efficient piezoelectric nanogenerator (PENG). The ferroelectric property of 1 originates from its polar tetragonal space group P42, verified by P-E loop measurements. The ferroelectric domain characteristics of 1 were further probed by piezoresponse force microscopy (PFM), which gave characteristic 'butterfly' and hysteresis loops. The PFM amplitude vs. drive voltage measurements gave a relatively high magnitude of the converse piezoelectric coefficient for 1. PCL polymer composites with various weight percentages (wt%) of 1 were prepared and subjected to piezoelectric energy harvesting tests, which gave a maximum open-circuit voltage of 36.2 V and a power density of 48.1 μW cm-2 for the 10 wt% 1-PCL champion device. Furthermore, a gyroid-shaped 3D-printed 10 wt% 1-PCL composite was fabricated to test its practical utility, which gave an excellent output voltage of 41 V and a power density of 56.8 μW cm-2. These studies promise the potential of simple organic compounds for building PENG devices using advanced manufacturing technologies.

Near-90° Switch in the Polar Axis of Dion-Jacobson Perovskites by Halide Substitution

Ferroelectricity in two-dimensional hybrid (2D) organic-inorganic perovskites (HOIPs) can be engineered by tuning the chemical composition of the organic or inorganic components to lower the structural symmetry and order-disorder phase change. Less efforts are made toward understanding how the direction of the polar axis is affected by the chemical structure, which directly impacts the anisotropic charge order and nonlinear optical response. To date, the reported ferroelectric 2D Dion-Jacobson (DJ) [PbI₄]^2- perovskites exhibit exclusively out-of-plane polarization. Here, we discover that the polar axis in ferroelectric 2D Dion-Jacobson (DJ) perovskites can be tuned from the out-of-plane (OOP) to the in-plane (IP) direction by substituting the iodide with bromide in the lead halide layer. The spatial symmetry of the nonlinear optical response in bromide and iodide DJ perovskites was probed by polarized second harmonic generation (SHG). Density functional theory calculations revealed that the switching of the polar axis, synonymous with the change in the orientation of the sum of the dipole moments (DMs) of organic cations, is caused by the conformation change of organic cations induced by halide substitution.

Piezoelectricity-modulated optical recombination dynamics of monolayer-MoS2/GaN-film heterostructures

Dynamic manipulation of optoelectronic responses by mechanical stimuli is promising for developing wearable electronics and human-machine interfacing. Although 2D-3D hybrid heterostructures can bring advancements in optoelectronics, their dynamic optical responses to external strains remain rarely studied. Here, we demonstrate the strain-tuned recombination dynamics of monolayer-MoS₂ and thin-film-GaN heterostructures. We find that optical excitons in the heterostructures, apart from trions, can be markedly modulated by strains. We argue that MoS₂ piezoelectric dipoles across the interfaces lead to curved band diagrams, in which optical excitons dissociate into spatially separated quasi-particles and concurrently relocate to the maxima of valence bands and the minima of conduction bands. With the increase in tensile strains, the photoluminescence (PL) intensity of the heterostructures shows quenched responses. Noticeably, the change in PL spectra strongly depends on the directions of the applied strains because of the lateral piezoelectric periodicity of MoS₂ flakes. This work not only helps in understanding the underlying physics of the decreased PL intensities upon applying strains but also demonstrates a feasible way (i.e., strains) to manipulate the PL efficiency of 2D-material-based optoelectronics.

Strain-Negligible Eu2+ Doping Enabled Color-Tunable Harsh Condition-Resistant Perovskite Nanocrystals for Superior Light-Emitting Diodes

Cesium lead halide (CsPbX₃, X = Br, Cl, I) perovskite nanocrystals (NCs) possess tunable band gaps across the entire visible spectral range and are promising for various optoelectronic device applications. However, poor performance in adverse conditions limits their further development in practical optoelectronics. Herein, highly stable perovskite NCs are developed by doping europium(II) (Eu²⁺) into the B-site of CsPbBr₃ with negligible lattice distortion/strain. Eu²⁺-doped CsPbBr₃ NCs exhibit tunable green-to-cyan emissions, high photoluminescence quantum yield, and good resistance to harsh conditions, including ultraviolet irradiation, erosion of moisture, and corrosion of polar solvent molecules. In particular, the thermal stability of CsPbBr₃ NCs after Eu²⁺ doping is greatly enhanced under continuous heating in air, while exhibiting the emissions of Eu²⁺. Furthermore, a Eu²⁺-doped CsPbBr₃ NC-based cyan light-emitting diode is fabricated, which exhibits narrow exciton emission driven under different current densities. This work would open the avenue to develop the rational lanthanide ion doping strategy for further advancing perovskite nanomaterials toward practical applications.

Insights into the relationship between ferroelectric and photovoltaic properties in CsGeI3 for solar energy conversion

Materials such as oxide and halide perovskites that simultaneously exhibit spontaneous polarization and absorption of visible light are called photoferroelectrics. They hold great promise for the development of applications in optoelectronics, information storage, and energy conversion. Devices based on ferroelectric photovoltaic materials yield an open-circuit voltage that is much higher than the band gap of the corresponding active material owing to a strong internal electric field. Their efficiency has been proposed to exceed the Shockley-Queisser limit for ideal solar cells. In this paper, we present theoretical calculations of the photovoltaic properties of the ferroelectric phase of the inorganic germanium halide perovskite (CsGeI₃). Firstly, the electronic, optical and ferroelectric properties were calculated using the FP-LAPW method based on density functional theory, and the modern theory of polarization based on the Berry phase approach, respectively. The photovoltaic performance was evaluated using the Spectroscopic Limited Maximum Efficiency (SLME) model based on the results of first-principles calculations, in which the power conversion efficiency and the photocurrent density-voltage (J-V) characteristics were estimated. The calculated results show that the valence band maximum (VBM) of CsGeI₃ is mainly contributed by the I-5p and Ge-4s orbitals, whereas the conduction band is predominantly derived from Ge-4p orbitals. It can be seen that CsGeI₃ exhibits a direct bandgap semiconductor at the symmetric point of Z with a value of 1.53 eV, which is in good agreement with previous experimental results. The ferroelectric properties were therefore investigated. With a switching energy barrier of 19.83 meV per atom, CsGeI₃ has a higher theoretical ferroelectric polarization strength of 15.82 μC cm^-2. The SLME calculation also shows that CsGeI₃ has a high photoelectric conversion efficiency of over 28%. In addition to confirming their established favorable band gap and strong absorption, we demonstrate that CsGeI₃ exhibits a large shift current bulk photovoltaic effect of up to 40 μA V^-2 in the visible region. Thus, this material is a potential ferroelectric photovoltaic absorbed layer with high efficiency.

Ferroelectric Tuning of ZnO Ultraviolet Photodetectors

The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection performance. This study proposes a strategy for ZnO ultraviolet (UV) photodetectors regulated by a ferroelectric gate. The ZnO nanowire (NW) UV photodetector was tuned by a 2D CuInP₂S₆ (CIPS) ferroelectric gate, which decreased the dark current and enhanced the responsivity and detectivity to 2.40 × 10⁴ A/W and 7.17 × 10¹¹ Jones, respectively. This strategy was also applied to a ZnO film UV photodetector that was tuned by a P(VDF-TrFE) ferroelectric gate. Lower power consumption and higher performance can be enabled by ferroelectric tuning of ZnO ultraviolet photodetectors, providing new inspiration for the fabrication of high-performance photodetectors.

Ferroelectrics-Integrated Two-Dimensional Devices toward Next-Generation Electronics

Ferroelectric materials play an important role in a wide spectrum of semiconductor technologies and device applications. Two-dimensional (2D) van der Waals (vdW) ferroelectrics with surface-insensitive ferroelectricity that is significantly different from their traditional bulk counterparts have further inspired intensive interest. Integration of ferroelectrics into 2D-layered-material-based devices is expected to offer intriguing working principles and add desired functionalities for next-generation electronics. Herein, fundamental properties of ferroelectric materials that are compatible with 2D devices are introduced, followed by a critical review of recent advances on the integration of ferroelectrics into 2D devices. Representative device architectures and corresponding working mechanisms are discussed, such as ferroelectrics/2D semiconductor heterostructures, 2D ferroelectric tunnel junctions, and 2D ferroelectric diodes. By leveraging the favorable properties of ferroelectrics, a variety of functional 2D devices including ferroelectric-gated negative capacitance field-effect transistors, programmable devices, nonvolatile memories, and neuromorphic devices are highlighted, where the application of 2D vdW ferroelectrics is particularly emphasized. This review provides a comprehensive understanding of ferroelectrics-integrated 2D devices and discusses the challenges of applying them into commercial electronic circuits.

Novel Rubber Composites Based on Copper Particles, Multi-Wall Carbon Nanotubes and Their Hybrid for Stretchable Devices

New technologies are constantly addressed in the scientific community for updating novel stretchable devices, such as flexible electronics, electronic packaging, and piezo-electric energy-harvesting devices. The device promoted in the present work was found to generate promising ~6V and durability of >0.4 million cycles. This stretchable device was based on rubber composites. These rubber composites were developed by solution mixing of room temperature silicone rubber (RTV-SR) and nanofiller, such as multi-wall carbon nanotube (MWCNT) and micron-sized copper particles and their hybrid. The hybrid composite consists of 50:50 of both fillers. The mechanical stretchability and compressive modulus of the composites were studied in detail. For example, the compressive modulus was 1.82 MPa (virgin) and increased at 3 per hundred parts of rubber (phr) to 3.75 MPa (MWCNT), 2.2 MPa (copper particles) and 2.75 MPa (hybrid). Similarly, the stretching ability for the composites used in fabricating devices was 148% (virgin) and changes at 3 phr to 144% (MWCNT), 230% (copper particles) and 199% (hybrid). Hence, the hybrid composite was found suitable with optimum stiffness and robust stretching ability to be useful for stretching electronic devices explored in this work. These improved properties were tested for a real-time stretchable device, such as a piezoelectric energy-harvesting device and their improved voltage output and durability were reported. In the end, a series of experiments conducted were summarized and a discussion on the best candidate with higher properties useful for prospective applications was reported.

Nonvolatile modulation of luminescence in perovskite oxide thin films by ferroelectric gating

Nonvolatile and giant modulation of luminescence can be realized by the ferroelectric gating effect in a Ga³⁺/Pr³⁺ co-doped BaTiO₃ ultra-thin film epitaxially grown on a [Pb(Mg_1/3Nb_2/3)O₃]_0.7-[PbTiO₃]_0.3 single-crystallized substrate. The change behavior of the emission intensity matches that of the ferroelectric polarization hysteresis loop with a giant enhancement of over 13 times with negative polarization orientation. The interaction of O^2- at the O2p orbital in the valence band and Pr³⁺ with injected holes by the ferroelectric gating effect promotes the formation of excited state O^-, Pr⁴⁺, or Pr^3+q. This ferroelectric gating method can promote the development of controllable photo-, electroluminescent, and other optoelectronic devices for display, sensing, communication, and so on.

Control of upconversion luminescence by tailoring energy migration in doped perovskite superlattices

We describe an experimental investigation of photon upconversion (UC) in a series of perovskite BaTiO₃/SrTiO₃ superlattices doped with different lanthanide compositions. We show that UC emission can be effectively enhanced by precisely incorporating a set of lanthanide ions into separated layers rather than homogeneously distributing the dopant ions in the host lattice. The use of an inert layer in the superlattice can suppress deleterious energy cross-relaxation. Furthermore, UC emission can be rendered by controlling the energy migration mediated by the Yb-doped sublattice. These results demonstrate the opportunity to modulate energy migration and transfer processes through the rational design of superlattice structures.

All-inorganic perovskite nanocrystals: next-generation scintillation materials for high-resolution X-ray imaging

With super strong penetrability, high-energy X-rays can be applied to probe the inner structure of target objects under nondestructive situations. Scintillation materials can down-convert X-rays into visible light, enabling the reception of photon signals and photoelectric conversion by common sensing arrays such as photomultiplier tubes and amorphous-Si photodiode matrixes. All-inorganic perovskite nanocrystals are emerging photovoltaic and scintillation materials, with tremendous light-conversion efficiency and tunable luminous properties, exhibiting great potential for high-quality X-ray imaging. Recent advancements in nanotechnology further accelerate the performance improvement of scintillation materials. In this review, we will provide a comprehensive overview of novel all-inorganic perovskite nano-scintillators in terms of potential applications in low-dose X-ray medical radiography. Compared with conventional scintillators, the merits/drawbacks, challenges, and scintillation performance control will be the focus of this article.

Simultaneous Large Optical and Piezoelectric Effects Induced by Domain Reconfiguration Related to Ferroelectric Phase Transitions

Electrical switching of ferroelectric domains and subsequent domain wall motion promotes strong piezoelectric activity, however, light scatters at refractive index discontinuities such as those found at domain wall boundaries. Thus, simultaneously achieving large piezoelectric effect and high optical transmissivity is generally deemed infeasible. Here, it is demonstrated that the ferroelectric domains in perovskite Pb(In_1/2 Nb_1/2 )O₃ -Pb(Mg_1/3 Nb_2/3 )O₃ -PbTiO₃ domain-engineered crystals can be manipulated by electrical field and mechanical stress to reversibly and repeatably, with small hysteresis, transform the opaque polydomain structure into a highly transparent monodomain state. This control of optical properties can be achieved at very low electric fields (less than 1.5 kV cm^-1 ) and is accompanied by a large (>10 000 pm V^-1 ) piezoelectric coefficient that is superior to linear state-of-the-art materials by a factor of three or more. The coexistence of tunable optical transmissivity and high piezoelectricity paves the way for a new class of photonic devices.

Encapsulation of perovskite quantum dots into LnIII-incorporated polymer matrix to achieve white light emission

All-inorganic perovskite quantum dots (PQDs) with high quantum efficiency and broad spectral tunability showing potential applications in light-emitting diodes (LEDs) are promising luminescent materials. However, poor stability has also become...

First-principles study of exciton self-trapping and electric polarization in one-dimensional organic lead halide perovskites

Revealing the origin of self-trapped excitons is a prerequisite for further improving the photoluminescence efficiency of low-dimensional organic perovskite. Here, the microscopic formation mechanism of intrinsic self-trapped excitons in one-dimensional...

Theoretical study on the ferroelectric and light absorption properties of Li2SbBiO6 for harvesting visible light

Ferroelectric oxides with large bandgaps have restricted applications in photovoltaic and photocatalytic fields. Based on recent experiments with the ferroelectric compound, LiSbO₃, the stability and optoelectronic properties of a new ferroelectric compound, namely Li₂SbBiO₆, are investigated in this study. The calculated results demonstrate that Li₂SbBiO₆ satisfies the stability conditions of the elastic coefficients and phonon dynamics. Li₂SbBiO₆ maintains the ferroelectric polarization strength of LiSbO₃ and significantly reduces the bandgap, and thus has been explored for applications in photovoltaic and photocatalytic fields. Li₂SbBiO₆ is a new potential ferroelectric oxide for harvesting visible light owing to its suitable bandgap and a large hole–electron effective mass ratio.

Li₂SbBiO₆ slightly improves the ferroelectric polarization of LiSbO₃ and significantly reduces the band gap to expand its applications in photovoltaic and photocatalysis under visible light.

2D Piezoelectric Bi2 MoO6 Nanoribbons for GSH-Enhanced Sonodynamic Therapy

Reducing the scavenging capacity of reactive oxygen species (ROS) and elevating ROS production are two primary goals of developing novel sonosensitizers for sonodynamic therapy (SDT). Hence, ultrathin 2D Bi2 MoO6 -poly(ethylene glycol) nanoribbons (BMO NRs) are designed as piezoelectric sonosensitizers for glutathione (GSH)-enhanced SDT. In cancer cells, BMO NRs can consume endogenous GSH to disrupt redox homeostasis, and the GSH-activated BMO NRs (GBMO) exhibit an oxygen-deficient structure, which can promote the separation of electron-hole pairs, thereby enhancing the efficiency of ROS production in SDT. The ultrathin GBMO NRs are piezoelectric, in which ultrasonic waves introduce mechanical strain to the nanoribbons, resulting in piezoelectric polarization and band tilting, thus accelerating toxic ROS production. The as-synthesized BMO NRs enable excellent computed tomography imaging of tumors and significant tumor suppression in vitro and in vivo. A piezoelectric Bi2 MoO6 sonosensitizer-mediated two-step enhancement SDT process, which is activated by endogenous GSH and amplified by exogenous ultrasound, is proposed. This process not only provides new options for improving SDT but also broadens the application of 2D piezoelectric materials as sonosensitizers in SDT.

Electro-responsive actuators based on graphene

Electro-responsive actuators (ERAs) hold great promise for cutting-edge applications in e-skins, soft robots, unmanned flight, and in vivo surgery devices due to the advantages of fast response, precise control, programmable deformation, and the ease of integration with control circuits. Recently, considering the excellent physical/chemical/mechanical properties (e.g., high carrier mobility, strong mechanical strength, outstanding thermal conductivity, high specific surface area, flexibility, and transparency), graphene and its derivatives have emerged as an appealing material in developing ERAs. In this review, we have summarized the recent advances in graphene-based ERAs. Typical the working mechanisms of graphene ERAs have been introduced. Design principles and working performance of three typical types of graphene ERAs (e.g., electrostatic actuators, electrothermal actuators, and ionic actuators) have been comprehensively summarized. Besides, emerging applications of graphene ERAs, including artificial muscles, bionic robots, human-soft actuators interaction, and other smart devices, have been reviewed. At last, the current challenges and future perspectives of graphene ERAs are discussed.

Highly Transparent Eu-Doped 0.72PMN-0.28PT Ceramics with Excellent Piezoelectricity

The 0.975[0.72Pb(Mg_1/3Nb_2/3)O₃-0.28PbTiO₃]-0.025Eu₂O₃ ceramics were prepared by a two-step sintering process including oxygen sintering and hot-pressing. An ultrahigh piezoelectric charge coefficient of 1400 pC/N and a superior optical transmittance up to 68% were simultaneously achieved. The underlying mechanism was discussed from a microstructural perspective, where the watermark domain configuration with a small domain size is responsible for the high optical transmission, while the large remanent polarization and dielectric constant and the introduced tetragonal phase with a parallel stripe domain structure are believed to synergistically contribute to the high piezoelectric coefficients. This work demonstrates that the rare-earth dopant in the PMN-PT ceramic system is conducive to enhanced transparency and piezoelectricity.

Ferroelectricity and Piezoelectric Energy Harvesting of Hybrid A2BX4-Type Halogenocuprates Stabilized by Phosphonium Cations

Perovskite-structured compounds containing organic cations and inorganic anions have gained prominence as materials for next-generation electronic and energy devices. Hybrid materials possessing ferro- and piezoelectric properties are in recent focus for mechanical energy harvesting (nanogenerator) applications. Here, we report the ferroelectric behavior of A₂BX₄-type halogenocuprate materials supported by heteroleptic phosphonium cations. These lead-free discrete Cu(II) halides [Ph₃MeP]₂[CuCl₄] (1) and [Ph₃MeP]₂[CuBr₄] (2) exhibit a remnant polarization (P _r) of 17.16 and 26.02 μC cm^-2, respectively, at room temperature. Furthermore, flexible polymer films were prepared with various weight percentage (wt %) compositions of 1 in thermoplastic polyurethane (TPU) and studied for mechanical energy harvesting applications. A highest peak-to-peak voltage output of 25 V and power density of 14.1 μW cm^-2 were obtained for the optimal 15 wt % 1-TPU composite film. The obtained output voltages were utilized for charging a 100 μF electrolytic capacitor that reaches its maximum charging point within 30 s with sizable stored energies and accumulated charges.

A Flexible Energy Harvester from an Organic Ferroelectric Ammonium Salt

Organic ferroelectrics due to their low cost, easy preparation, light weight, high flexibility and phase stability are gaining tremendous attention in the field of portable electronics. In this work, we report the synthesis, structure and ferroelectric behavior of a two-component ammonium salt 2, containing a bulky [Bn(4-BrBn)NMe₂ ]⁺ (Bn=benzyl and 4-BrBn=4-bromobenzyl) cation and tetrahedral (BF₄ )^- anion. The structural analysis revealed the presence of rich non-classical C-H⋅⋅⋅F and C-H⋅⋅⋅Br interactions in this molecule that were quantified by Hirshfeld surface analysis. The polarization (P) vs. electric field (E) hysteresis loop measurements on 2 gave a remnant polarization (P_r ) of 14.4 μC cm^-2 at room temperature. Flexible polymer composites with various (5, 10, 15 and 20) weight percentages (wt%) of 2 in thermoplastic polyurethane (TPU) were prepared and tested for mechanical energy harvesting applications. A notable peak-to-peak output voltage of 20 V, maximum current density of 1.1 μA cm^-2 and power density of 21.1 μW cm^-2 were recorded for the 15 wt% 2-TPU composite device. Furthermore, the voltage output generated from this device was utilized to rapidly charge a 100 μF capacitor, with stored energies and measured charges of 156 μJ and 121.6 μC, respectively.

Increased dielectric performance of PVDF-based composites by electrochemical exfoliated graphite additives

Adding conductive graphene into polyvinyliden1 fluoride (PVDF) is an effective method to improve the dielectric properties. However, the high conductivity and uniform distribution of graphene in PVDF matrix still meet challenges. In this work, electrochemical exfoliated graphite (EEG) with good conductivity and solution dispersion is used to prepare PVDF/EEG films. By this method no specific conditions are needed such as reduction or hot press. The dielectric properties and flexibility of PVDF/EEG films of different concentrations of EEG are investigated. Especially, when EEG content is 2.6 wt%, composite film has a high dielectric constant of 86 and a low dielectric loss of 0.9 (100 Hz). Simultaneously, the tensile strength of the film was up to 55.1 MPa. The preparation method is simple and convenient, and the obtained material has high dielectric constant and tensile strength. This method paves the way for the application of flexible electronic sensing equipment.

Manipulating ferroelectric behaviors via electron-beam induced crystalline defects

Ferroelectric nanoplates are attractive for applications in nanoelectronic devices. Defect engineering has been an effective way to control and manipulate ferroelectric properties in nanoscale devices. Defects can act as pinning centers for ferroelectric domain wall motion, altering the switching properties and domain dynamics of ferroelectrics. However, there is a lack of detailed investigation on the interactions between defects and domain walls in ferroelectric nanoplates due to the limitation of previous characterization techniques, which impedes the development of defect engineering in ferroelectric nanodevices. In this study, we applied in situ biasing transmission electron microscopy to explore how dislocation loops, which were judiciously introduced into barium titanate nanoplates via electron beam irradiation, affect the motion of ferroelectric domain walls. The results show that the motion was dramatically suppressed by these localized defects, because of the local strain fields induced by the defects. The pinning effect can be further enhanced by multiple domain walls embedded with defect arrays. These results indicate the possibility of manipulating domain switching in ferroelectric nanoplates via the electron beam.

The Deformation Behavior and Bending Emissions of ZnO Microwire Affected by Deformation-Induced Defects and Thermal Tunneling Effect

The realization of electrically pumped emitters at micro and nanoscale, especially with flexibility or special shapes is still a goal for prospective fundamental research and application. Herein, zinc oxide (ZnO) microwires were produced to investigate the luminescent properties affected by stress. To exploit the initial stress, room temperature in situ elastic bending stress was applied on the microwires by squeezing between the two approaching electrodes. A novel unrecoverable deformation phenomenon was observed by applying a large enough voltage, resulting in the formation of additional defects at bent regions. The electrical characteristics of the microwire changed with the applied bending deformation due to the introduction of defects by stress. When the injection current exceeded certain values, bright emission was observed at bent regions, ZnO microwires showed illumination at the bent region priority to straight region. The bent emission can be attributed to the effect of thermal tunneling electroluminescence appeared primarily at bent regions. The physical mechanism of the observed thermoluminescence phenomena was analyzed using theoretical simulations. The realization of electrically induced deformation and the related bending emissions in single microwires shows the possibility to fabricate special-shaped light sources and offer a method to develop photoelectronic devices.

Lattice Defect Engineering Enables Performance-Enhanced MoS2 Photodetection through a Paraelectric BaTiO3 Dielectric

Carrier mobility and density are intrinsically important in nanophoto/electronic devices. High-dielectric-constant coupled polarization-field gate ferroelectrics are frequently studied and partially capable in achieving large-scale tuning of photoresponse, but their light absorption and carrier density seem generally ineffective. This raises questions about whether a similarly high-dielectric-constant paraelectric gate dielectric could enable tuning and how the principles involved could be established. In this study, by deliberately introducing lattice defects in high-dielectric-constant paraelectric, cubic BaTiO₃ (c-BTO) was explored to fabricate MoS₂ photodetectors with ultrahigh detection ability and outstanding field-effect traits. An organic-metal-based spin-coating cum annealing method was used for the c-BTO synthesis, with an optimized thickness (300 nm), by introducing lattice defects properly but maintaining a large dielectric constant (55 at 1k Hz) and low dielectric loss (0.06 at 1k Hz), which renders the enhanced visible-light region absorption. As a result of the synergistically enhanced mobility and photoabsorption, the MoS₂/BTO FET exhibits promising merits, for example, on/off ratio, subthreshold swing, and mobilities for high-performance photodetectors with excellent responsivity (600 AW^-1) and detectivity (1.25 × 10¹² Jones). Thus, this work facilitates the establishment of a lattice defect induced sub-bandgap absorption landmap for synergistically enhanced photoresponse for high-performance photodetector exploration.

Hybrid System Combining Two-Dimensional Materials and Ferroelectrics and Its Application in Photodetection

Photodetectors are one of the most important components for a future "Internet-of-Things" information society. Compared to the mainstream semiconductor-based photodetectors, emerging devices based on two-dimensional (2D) materials and ferroelectrics as well as their hybrid systems have been extensively studied in recent decades due to their outstanding performances and related interesting physical, electrical, and optoelectronic phenomena. In this paper, we review the photodetection based on 2D materials and ferroelectric hybrid systems. The fundamentals of 2D and ferroelectric materials as well as the interaction in the hybrid system will be introduced. Ferroelectricity modulated optoelectronic properties in the hybrid system will be discussed in detail. After the basics and figures of merit of photodetectors are summarized, the 2D-ferroelectrics devices with different structures including p-n diodes, Schottky diodes, and field-effect transistors will be reviewed and compared. The polarization of ferroelectrics offers the possibility of the modulation and enhancement of the photodetection in the hybrid detectors, which will be discussed in depth. Finally, the challenges and perspectives of the photodetectors based on 2D ferroelectrics will be proposed. This Review outlines the important aspects of the recent development of the hybrid system of 2D and ferroelectric materials, which could interact with each other and thus lead to photodetectors with higher performances. Such a Review will be helpful for the research of emerging physical phenomena and for the design of multifunctional nanoscale electronic and optoelectronic devices.

Photoluminescence and optical temperature sensing properties of Dy3+-doped Na0.5Bi0.5TiO3 multifunctional ferroelectric ceramics

A series of Dy³⁺ doped Na_0.5Bi_0.5TiO₃ (NBT: xDy³⁺, x = 0.003-0.018) lead-free ferroelectric ceramics were successfully prepared by a solid-state reaction method. The Dy³⁺ ions composition dependent photoluminescence properties were systematically studied. All the samples display intense characteristic emission of Dy³⁺ under an excitation wavelength of 454 nm, which are attributed to the transitions of ⁴F_9/2 → ⁶H_J/2 (J = 13, 11 and 9). All the samples show strong orange-yellow emission, which could be applied to warm white light hopefully. When the content of Dy³⁺ is equal to 0.012, the ceramic has the optimal luminous performance. Remarkable thermal quenching of the luminous intensity ceramic occurs as the temperature is higher than initial temperature 293 K. Furthermore, Dy³⁺ activated photoluminescence performance combined with the presence of ferroelectricity in the NBT host can be applied to developing non-contact optical temperature sensitive materials and other future novel optoelectronic devices.

Strain-Modulated Photoelectric Responses from a Flexible α-In2Se3/3R MoS2 Heterojunction

Semiconducting piezoelectric α-In₂Se₃ and 3R MoS₂ have attracted tremendous attention due to their unique electronic properties. Artificial van der Waals (vdWs) heterostructures constructed with α-In₂Se₃ and 3R MoS₂ flakes have shown promising applications in optoelectronics and photocatalysis. Here, we present the first flexible α-In₂Se₃/3R MoS₂ vdWs p-n heterojunction devices for photodetection from the visible to near infrared region. These heterojunction devices exhibit an ultrahigh photoresponsivity of 2.9 × 10³ A W^-1 and a substantial specific detectivity of 6.2 × 10¹⁰ Jones under a compressive strain of - 0.26%. The photocurrent can be increased by 64% under a tensile strain of + 0.35%, due to the heterojunction energy band modulation by piezoelectric polarization charges at the heterojunction interface. This work demonstrates a feasible approach to enhancement of α-In₂Se₃/3R MoS₂ photoelectric response through an appropriate mechanical stimulus.

High-Performance Vertical Organic Phototransistors Enhanced by Ferroelectrics

Organic phototransistors with high sensitivity and responsivity to light irradiance have great potential applications in national defense, meteorology, industrial manufacturing, and medical security. However, undesired dark current and photoresponsivity limit their practical applications. Here, a novel vertical organic phototransistor combined with ferroelectric materials is developed. The device structure has nanometer channel length, which can effectively separate photogenerated carriers and reduce the probability of carrier recombination and defect scattering, thus improving the device performance of phototransistors. Moreover, by inserting the poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) ferroelectric layer, the Schottky barrier at the interface between the semiconductor and source can be adjusted by the polarization of the external electric field, which can effectively reduce the dark current of the phototransistor to further improve the device performance. Therefore, our phototransistors exhibit a high photoresponsivity of more than 5.7 × 10⁵A/W, an outstanding detectivity of 1.15 × 10¹⁸ Jones, and an excellent photosensitivity of 5 × 10⁷ under 760 nm light illumination, which are better than those of conventional lateral organic phototransistors. This work provides a new approach for the development of high-performance phototransistors, which opens a new pathway for organic phototransistors in practical application.

Progress and Perspectives on Aurivillius-Type Layered Ferroelectric Oxides in Binary Bi4Ti3O12-BiFeO3 System for Multifunctional Applications

Driven by potentially photo-electro-magnetic functionality, Bi-containing Aurivillius-type oxides of binary Bi4Ti3O12-BiFeO3 system with a general formula of Bin+1Fen−3Ti3O3n+3, typically in a naturally layered perovskite-related structure, have attracted increasing research interest, especially in the last twenty years. Benefiting from highly structural tolerance and simultaneous electric dipole and magnetic ordering at room temperature, these Aurivillius-phase oxides as potentially single-phase and room-temperature multiferroic materials can accommodate many different cations and exhibit a rich spectrum of properties. In this review, firstly, we discussed the characteristics of Aurivillius-phase layered structure and recent progress in the field of synthesis of such materials with various architectures. Secondly, we summarized recent strategies to improve ferroelectric and magnetic properties, consisting of chemical modification, interface engineering, oxyhalide derivatives and morphology controlling. Thirdly, we highlighted some research hotspots on magnetoelectric effect, catalytic activity, microwave absorption, and photovoltaic effect for promising applications. Finally, we provided an updated overview on the understanding and also highlighting of the existing issues that hinder further development of the multifunctional Bin+1Fen−3Ti3O3n+3 materials.

In Situ Synthesis of FeOCl in Hollow Dendritic Mesoporous Organosilicon for Ascorbic Acid-Enhanced and MR Imaging-Guided Chemodynamic Therapy in Neutral pH Conditions

Chemodynamic therapy (CDT) based on the Fenton reaction is a promising strategy for nonlight cancer treatment. However, the traditional Fenton reaction is only efficient in strongly acidic conditions (pH = 2-4), resulting in the limited curative effect in a weakly acidic tumor microenvironment (TME). Herein, we first developed a simple in situ growth method to confine FeOCl nanosheets into hollow dendritic mesoporous organosilicon (H-DMOS) nanoparticles to obtain FeOCl@H-DMOS nanospheres. Ascorbic acid (AA) was then absorbed on the nanosystem as a H₂O₂ prodrug and, meanwhile, was used for the regeneration of Fentons reagent for Fe²⁺. Finally, poly(ethylene glycol) (PEG) was coated on FeOCl@H-DMOS-AA to enhance the permeability and retention (EPR) effect in tumor tissue. The as-fabricated FeOCl@H-DMOS-AA/PEG can generate a large amount of highly toxic hydroxyl radicals (^•OH) by catalyzing H₂O₂ even in neutral pH conditions with the help of AA. As a result, the effect of CDT has been markedly enhanced by the increased amount of H₂O₂ and the efficient Fenton reaction in mild acidic TME, which can remove almost all of the tumors in mice. In addition, FeOCl also endows the nanosystem with T₂-weighted MR imaging capability (r₂ = 34.08 mM^-1 s^-1), thus realizing the imaging-guided cancer therapy. All in all, our study may contribute a new direction and may have a bright future for enhanced CDT with a neutral pH range.

Reversible modification of ultra-broadband luminescence in transparent photonic materials through field-induced nanoscale structural transformation

The development of integrated multifunctional materials with transparent characteristics meets the requirements of optoelectronics and communication. The coupling of stimuli-responsive materials has become a frequently considered strategy. Experimentalists not only search for photonic materials with excellent physical and chemical properties, but also pursue precise and reversible spectral modification. In this study, the luminescent center Ni2+ is artificially introduced into the transparent LiNbO3 nanoferroelectric photonic materials. The Ni2+ ion-based transparent photonic materials exhibit novel complete ultra-broadband emission in the whole near-infrared region. Until now, the ultra-broadband emission was realized by codoping of several active doping ions. In addition, the emission intensity and wavelength of the luminescent center are modified accurately and reversibly by field-induced nanoscale structural transformation. The Ni2+ ion-based transparent nanoferroelectric photonic materials provide an easy way to develop tunable lasers and ultra-broadband optical amplifiers.

Enhanced photoluminescence and ferro/piezoelectric performance in piezo-luminescent materials with outstanding water resistance and thermal stability

Sm³⁺-Modified (1 -x)Na_0.5Bi_0.5TiO₃-xCaTiO₃ (NBT-xCT:Sm³⁺) piezo-luminescent ceramic materials were synthesized to investigate the influence of CaTiO₃ (CT) concentration on their photoluminescence and electrical performance. Under 480 nm irradiation, the NBT-xCT:Sm³⁺ samples exhibit prominent orange-red emission, with a prime emission peak centered at 597 nm. A moderate amount of CT doping in the Sm³⁺-modified NBT ceramics boosts both their photoluminescence and piezoelectric properties significantly, with NBT-0.04CT:Sm³⁺ showing the optimal performance. Furthermore, outstanding luminescence thermal stability over a temperature range of 293-473 K and superior water resistance behavior are achieved in the NBT-0.04CT:Sm³⁺ ceramic. These results indicate that NBT-xCT:Sm³⁺ piezo-luminescent ceramics show great potential applications in white LEDs, as well as novel optical-electronic multifunctional devices.

Ferroelectric Polymers Exhibiting Negative Longitudinal Piezoelectric Coefficient: Progress and Prospects

Piezoelectric polymers are well-recognized to hold great promise for a wide range of flexible, wearable, and biocompatible applications. Among the known piezoelectric polymers, ferroelectric polymers represented by poly(vinylidene fluoride) and its copolymer poly(vinylidene fluoride-co-trifluoroethylene) possess the best piezoelectric coefficients. However, the physical origin of negative longitudinal piezoelectric coefficients occurring in the polymers remains elusive. To address this long-standing challenge, several theoretical models proposed over the past decades, which are controversial in nature, have been revisited and reviewed. It is concluded that negative longitudinal piezoelectric coefficients arise from the negative longitudinal electrostriction in the crystalline domain of the polymers, independent of amorphous and crystalline-amorphous interfacial regions. The crystalline origin of piezoelectricity offers unprecedented opportunities to improve electromechanical properties of polymers via structural engineering, i.e., design of morphotropic phase boundaries in ferroelectric polymers.

Peculiar piezoelectricity of atomically thin planar structures

The emergence of piezoelectricity in two-dimensional (2D) materials has represented a milestone towards employing low-dimensional structures for future technologies. 2D piezoelectric materials possess unique and unprecedented characteristics that cannot be found in other morphologies; therefore, the applications of piezoelectricity can be substantially extended. By reducing the thickness into the 2D realm, piezoelectricity might be induced in otherwise non-piezoelectric materials. The origin of the enhanced piezoelectricity in such thin planes is attributed to the loss of centrosymmetry, altered carrier concentration, and change in local polarization and can be efficiently tailored via surface modifications. Access to such materials is important from a fundamental research point of view, to observe the extraordinary interactions between free charge carriers, phonons and photons, and also with respect to device development, for which planar structures provide the required compatibility with the large-scale fabrication technologies of integrated circuits. The existence of piezoelectricity in 2D materials presents great opportunities for applications in various fields of electronics, optoelectronics, energy harvesting, sensors, actuators and biotechnology. Additionally, 2D flexible nanostructures with superior piezoelectric properties are distinctive candidates for integration into nano-scale electromechanical systems. Here we fundamentally review the state of the art of 2D piezoelectric materials from both experimental and theoretical aspects and report the recent achievements in the synthesis, characterization and applications of these materials.

Rare-earth-containing perovskite nanomaterials: design, synthesis, properties and applications

As star material, perovskites have been widely used in the fields of optics, photovoltaics, electronics, magnetics, catalysis, sensing, etc. However, some inherent shortcomings, such as low efficiency (power conversion efficiency, external quantum efficiency, etc.) and poor stability (against water, oxygen, ultraviolet light, etc.), limit their practical applications. Downsizing the materials into nanostructures and incorporating rare earth (RE) ions are effective means to improve their properties and broaden their applications. This review will systematically summarize the key points in the design, synthesis, property improvements and application expansion of RE-containing (including both RE-based and RE-doped) halide and oxide perovskite nanomaterials (PNMs). The critical factors of incorporating RE elements into different perovskite structures and the rational design of functional materials will be discussed in detail. The advantages and disadvantages of different synthesis methods for PNMs will be reviewed. This paper will also summarize some practical experiences in selecting suitable RE elements and designing multi-functional materials according to the mechanisms and principles of REs promoting the properties of perovskites. At the end of this review, we will provide an outlook on the opportunities and challenges of RE-containing PNMs in various fields.

Halide Perovskites for Nonlinear Optics

Halide perovskites provide an ideal platform for engineering highly promising semiconductor materials for a wide range of applications in optoelectronic devices, such as photovoltaics, light-emitting diodes, photodetectors, and lasers. More recently, increasing research efforts have been directed toward the nonlinear optical properties of halide perovskites because of their unique chemical and electronic properties, which are of crucial importance for advancing their applications in next-generation photonic devices. Here, the current state of the art in the field of nonlinear optics (NLO) in halide perovskite materials is reviewed. Halide perovskites are categorized into hybrid organic/inorganic and pure inorganic ones, and their second-, third-, and higher-order NLO properties are summarized. The performance of halide perovskite materials in NLO devices such as upconversion lasers and ultrafast laser modulators is analyzed. Several potential perspectives and research directions of these promising materials for nonlinear optics are presented.

Modulation of lanthanide luminescence via an electric field

The modulation of luminescence via external stimuli such as temperature, mechanical stress, hydrostatic pressure, as well as electric and/or magnetic fields, has witnessed great progress, enabled the disclosure of new principles and energy transfer pathways, and widened applications. However, investigations on the luminescence modulation of lanthanide ions doped in semiconductors via an applied electric field are still absent. Herein, for the first time, we have demonstrated the in situ, real-time, and reversible modulation of the luminescence of Eu³⁺ doped in SnO₂ nanocrystals by manipulating the recombination rate of photo-generated electrons and holes, and the accompanied energy transfer mode in terms of linear and quasi-sinusoidal, from semiconductor to lanthanide ions. Following the same principle, the modulation of near infrared responsive Er³⁺ in SnO₂ and the visible luminescence of perovskite nanocrystals is further realized. This study offers extra methodologies for luminescence modulation, in addition to those already reported for ferro- and/or piezoelectric-hosted luminescent materials.