1
|
Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
Collapse
Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| |
Collapse
|
2
|
Xiao W, Chen Z, Liu X, Zhou Z, Fu Z, Tang Y, Liang R. Well-balanced performance achieved in PZT piezoceramics via a multiscale regulation strategy. MATERIALS HORIZONS 2024. [PMID: 39120566 DOI: 10.1039/d4mh00703d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/10/2024]
Abstract
Emerging high-power piezoelectric applications demand the development of piezoelectric materials featuring both a high mechanical quality factor (Qm) and a large piezoelectric coefficient (d33). However, it is widely accepted that an increase in d33 is usually accompanied with a decrease in Qm, and vice versa. Herein, a multiscale regulation strategy is proposed to improve Qm and d33 simultaneously from the perspectives of phase structure, ferroelectric domains, and lattice defects. A well-balanced combination of electromechanical performances with Qm = 726, d33 = 502 pC N-1, kp = 0.69, tan δ = 0.0024, and TC = 267 °C was obtained. Through structural characterization, it was observed that the morphotropic phase boundary and enhanced dispersion behavior lead to a lowered energy barrier, which contributes to polarization rotation and enhances piezoelectric performance. At the same time, the excellent piezoelectric performances also benefit from the highly oriented domain structure and small domain size after high-temperature poling. Furthermore, the segregation of Ba2+ causes A-site defects in the crystal lattice, accompanied with an increase in oxygen vacancies, which maintains the hardening effect of the ceramics. This study proposes a multiscale regulation strategy, providing insights for the design of high-power piezoelectric ceramics with high d33 and Qm.
Collapse
Affiliation(s)
- Wei Xiao
- Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 588 Heshuo Road, Jiading District, Shanghai 201800, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 19 Yuquan Road, Shijinshan District, Beijing 100049, China
| | - Zhengran Chen
- Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 588 Heshuo Road, Jiading District, Shanghai 201800, China.
| | - Xiaowei Liu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.
- School of Physical Science and Technology, Shanghai Tech University, Shanghai 201210, China
| | - Zhiyong Zhou
- Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 588 Heshuo Road, Jiading District, Shanghai 201800, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 19 Yuquan Road, Shijinshan District, Beijing 100049, China
| | - Zhengqian Fu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.
| | - Yizheng Tang
- Hangzhou Applied Acoustics Research Institute, Hangzhou 310023, China.
| | - Ruihong Liang
- Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 588 Heshuo Road, Jiading District, Shanghai 201800, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 19 Yuquan Road, Shijinshan District, Beijing 100049, China
| |
Collapse
|
3
|
Mondal P. Enhanced photodetection through a perovskite BaTiO 3 dielectric in a Si-MoS 2 heterojunction. Phys Chem Chem Phys 2024; 26:19380-19389. [PMID: 38973258 DOI: 10.1039/d4cp02155j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/09/2024]
Abstract
The present investigation deals with the effect of a BaTiO3 (BTO) dielectric layer on the performance of MoS2/p-Si heterojunction photodetectors. The MoS2/p-Si junction demonstrates a responsivity of ∼80 A W-1 and detectivity of ∼1012 Jones. The inclusion of a dielectric BTO layer significantly enhances the performance of MoS2/p-Si photodetectors, leading to a remarkable improvement with a very high responsivity of ∼603 A W-1 and detectivity of ∼1013 Jones. The I-V characteristics of the MoS2/p-Si and MoS2/BTO/p-Si junctions under illumination can be understood by considering their respective energy band diagrams. This addition alters the energy band alignment, leading to higher conduction band offset and valence band offset values. The large photocurrent in forward bias in the MoS2/BTO/p-Si junction may be attributed to the presence of photogenerated electrons in the depletion region of BTO. BTO exhibits characteristics such as a long carrier diffusion length and low recombination rates, contributing to a reduction in carrier recombination within the photodetector for which the photocurrent of the MoS2/BTO/p-Si heterojunction can be improved significantly. The enhanced performance of the MoS2/BTO/p-Si junction, characterized by higher responsivity and detectivity, underscores the potential of this heterojunction for advanced photodetection applications, suggesting promising avenues for further research and development in the field of photodetectors. A comparative study with the available literature reveals that the excellent responsivity of ∼603 A W-1 and detectivity of ∼1013 Jones of the presently studied MoS2/BTO/p-Si heterojunction appear highly promising for various futuristic device applications.
Collapse
Affiliation(s)
- Praloy Mondal
- Department of Physics, Shiv Nadar University, Greater Noida, Uttar Pradesh 201314, India.
- CREST, BITS Pilani, Hyderabad, India
| |
Collapse
|
4
|
Jin Q, Men K, Li G, Ou T, Lian Z, Deng X, Zhao H, Zhang Q, Ming A, Wei Q, Wei F, Tu H. Ultrasensitive Graphene Field-Effect Biosensors Based on Ferroelectric Polarization of Lithium Niobate for Breast Cancer Marker Detection. ACS APPLIED MATERIALS & INTERFACES 2024; 16:28896-28904. [PMID: 38770712 DOI: 10.1021/acsami.4c05860] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
Herein, we present a novel ultrasensitive graphene field-effect transistor (GFET) biosensor based on lithium niobate (LiNbO3) ferroelectric substrate for the application of breast cancer marker detection. The electrical properties of graphene are varied under the electrostatic field, which is generated through the spontaneous polarization of the ferroelectric substrate. It is demonstrated that the properties of interface between graphene and solution are also altered due to the interaction between the electrostatic field and ions. Compared with the graphene field-effect biosensor based on the conventional Si/SiO2 gate structure, our biosensor achieves a higher sensitivity to 64.7 mV/decade and shows a limit of detection down to 1.7 fM (equivalent to 12 fg·mL-1) on the detection of microRNA21 (a breast cancer marker). This innovative design combining GFETs with ferroelectric substrates holds great promise for developing an ultrahigh-sensitivity biosensing platform based on graphene that enables rapid and early disease diagnosis.
Collapse
Affiliation(s)
- Qingxi Jin
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China
- GRIMAT Engineering Institute Co., Ltd., Beijing 101407, China
- General Research Institute for Nonferrous Metals, Beijing 100088, China
| | - Kuo Men
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China
- GRIMAT Engineering Institute Co., Ltd., Beijing 101407, China
- General Research Institute for Nonferrous Metals, Beijing 100088, China
| | - Gangrong Li
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China
- GRINM (Guangdong) Institute for Advanced Materials and Technology, Foshan 528000, China
| | - Tianlang Ou
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China
- GRINM (Guangdong) Institute for Advanced Materials and Technology, Foshan 528000, China
- General Research Institute for Nonferrous Metals, Beijing 100088, China
| | - Ziwei Lian
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China
- GRIMAT Engineering Institute Co., Ltd., Beijing 101407, China
- General Research Institute for Nonferrous Metals, Beijing 100088, China
| | - Xin Deng
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China
- GRIMAT Engineering Institute Co., Ltd., Beijing 101407, China
- General Research Institute for Nonferrous Metals, Beijing 100088, China
| | - Hongbin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China
- General Research Institute for Nonferrous Metals, Beijing 100088, China
| | - Qingzhu Zhang
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
| | - Anjie Ming
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China
- GRIMAT Engineering Institute Co., Ltd., Beijing 101407, China
- General Research Institute for Nonferrous Metals, Beijing 100088, China
| | - Qianhui Wei
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China
- GRINM (Guangdong) Institute for Advanced Materials and Technology, Foshan 528000, China
- General Research Institute for Nonferrous Metals, Beijing 100088, China
| | - Feng Wei
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China
- GRINM (Guangdong) Institute for Advanced Materials and Technology, Foshan 528000, China
- General Research Institute for Nonferrous Metals, Beijing 100088, China
| | - Hailing Tu
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China
- General Research Institute for Nonferrous Metals, Beijing 100088, China
| |
Collapse
|
5
|
Liu Q, Cui S, Bian R, Pan E, Cao G, Li W, Liu F. The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications. ACS NANO 2024; 18:1778-1819. [PMID: 38179983 DOI: 10.1021/acsnano.3c05711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by an external field, which has stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile and electrically switchable feature have exhibited enormous potential in controlling the electronic and optoelectronic properties of 2D materials, leading to an extremely fertile area of research. Here, we review the 2D materials and relevant devices integrated with ferroelectricity. This review starts to introduce the background about the concerned themes, namely 2D materials and ferroelectrics, and then presents the fundamental mechanisms, tuning strategies, as well as recent progress of the ferroelectric effect on the optical and electrical properties of 2D materials. Subsequently, the latest developments of 2D material-based electronic and optoelectronic devices integrated with ferroelectricity are summarized. Finally, the future outlook and challenges of this exciting field are suggested.
Collapse
Affiliation(s)
- Qing Liu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Silin Cui
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Renji Bian
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Er Pan
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Guiming Cao
- School of Information Science and Technology, Xi Chang University, 615013 Xi'an, China
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Fucai Liu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| |
Collapse
|
6
|
Li X, Wang Z, Ji W, Lu T, You J, Wang K, Liu G, Liu Y, Wang L. Polarization Alignment in Polycrystalline BiFeO 3 Photoelectrodes for Tunable Band Bending. ACS NANO 2023; 17:22944-22951. [PMID: 37947409 DOI: 10.1021/acsnano.3c08081] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2023]
Abstract
Polarization in a semiconductor can modulate the band bending via the depolarization electric field (EdP), subsequently tuning the charge separation and transfer (CST) process in photoelectrodes. However, the random orientation of dipole moments in many polycrystalline semiconductor photoelectrodes leads to negligible polarization effect. How to effectively align the dipole moments in polycrystalline photoelectrodes into the same direction to maximize the polarization is still to be developed. Herein, we report that the dipole moments in a ferroelectric BiFeO3 photoelectrode can be controlled under external poling, resulting in a tunable CST efficiency. A negative bias of -40 voltage (V) poling to the photoelectrode leads to an over 110% increase of the CST efficiency, while poling at +40 V, the CST efficiency is reduced to only 41% of the original value. Furthermore, a nearly linear relationship between the external poling voltage and surface potential is discovered. The findings here provide an effective method in tuning the band bending and charge transfer of the emerging ferroelectricity driven solar energy conversion.
Collapse
Affiliation(s)
- Xianlong Li
- Nanomaterials Centre, School of Chemical Engineering, Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, Queensland 4072, Australia
| | - Zhiliang Wang
- Nanomaterials Centre, School of Chemical Engineering, Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, Queensland 4072, Australia
| | - Wenzhong Ji
- Research School of Chemistry, The Australian National University, Canberra, ACT 2601, Australia
| | - Teng Lu
- Research School of Chemistry, The Australian National University, Canberra, ACT 2601, Australia
| | - Jiakang You
- Nanomaterials Centre, School of Chemical Engineering, Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, Queensland 4072, Australia
| | - Kai Wang
- Nanomaterials Centre, School of Chemical Engineering, Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, Queensland 4072, Australia
- WA School of Mines: Minerals, Energy and Chemical Engineering, Curtin University, Perth, Western Australia 6102, Australia
| | - Gang Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang 110016, China
| | - Yun Liu
- Research School of Chemistry, The Australian National University, Canberra, ACT 2601, Australia
| | - Lianzhou Wang
- Nanomaterials Centre, School of Chemical Engineering, Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, Queensland 4072, Australia
| |
Collapse
|
7
|
Yu P, Wang W, Zheng T, Wan X, Jiang Y. Pyro-Phototronic Effect-Enhanced Photocurrent of a Self-Powered Photodetector Based on ZnO Nanofiber Arrays/BaTiO 3 Films. ACS APPLIED MATERIALS & INTERFACES 2023; 15:46031-46040. [PMID: 37733942 DOI: 10.1021/acsami.3c08880] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/23/2023]
Abstract
Self-powered photodetectors (PD) based on ferroelectric materials have gained huge attention because of the spontaneous polarization and unique photovoltaic effect. However, the low photocurrent values and switch ratio of the ferroelectric materials limit their further practical applications in a wide temperature range. In this study, the self-powered ZnO nanofiber array/BaTiO3 (ZnO-NFA/BTO) PD was fabricated by high-ordered ZnO-NFA via electrospinning method deposited on a 300 nm BTO film synthesized using sol-gel method. The electrospinning can prepare ZnO-NFAs with a controllable diameter (100 nm) and orientation and is directly deposited on the quartz at a large scale, which simplifies the fabrication process. This device possesses a greater on/off ratio of 2357 at zero bias than that of BTO PD (3.33) and the ZnO-NFA PD (125) at 0.2 V. The highest responsivity and specific detectivity are 1.41 mA W-1 and 1.48 × 109 Jones at 368 nm under 0 V bias, respectively, which is enhanced about three magnitudes than the pristine BTO PD (1.21 μA W-1 and 1.02 × 109 Jones). The photocurrent of the ZnO-NFA/BTO PD strongly depends on the temperature. After the cooling system and prepolarization processing are both introduced, the largest light current (475 nA) and photovoltaic plateaus (585 nA) are enhanced by about 4417 and 4278% under 368 nm at a power intensity of 4.46 mW cm-2 at 0 °C, respectively. The enhancement of photocurrent is associated with a ferro-pyro-phototronic effect, evidenced by enhanced ferroelectric polarization. The ZnO-NFA/BTO PD can detect weak signals at low power intensity with a wide temperature range of 0-100 °C under 0 V bias. The self-powered ZnO-NFA/BTO PD provides a new and promising way to fabricate high-performance and low-cost photodetectors from inorganic perovskite materials.
Collapse
Affiliation(s)
- Pingping Yu
- Department of Electronic Engineering, Institute of Advanced Technology, Jiangnan University, Wuxi 214122, China
| | - Weiwei Wang
- Department of Electronic Engineering, Institute of Advanced Technology, Jiangnan University, Wuxi 214122, China
| | - Tianxu Zheng
- Department of Electronic Engineering, Institute of Advanced Technology, Jiangnan University, Wuxi 214122, China
| | - Xi Wan
- Department of Electronic Engineering, Institute of Advanced Technology, Jiangnan University, Wuxi 214122, China
| | - Yanfeng Jiang
- Department of Electronic Engineering, Institute of Advanced Technology, Jiangnan University, Wuxi 214122, China
| |
Collapse
|
8
|
Sahoo S, Kothavade PA, Naphade DR, Torris A, Praveenkumar B, Zaręba JK, Anthopoulos TD, Shanmuganathan K, Boomishankar R. 3D-printed polymer composite devices based on a ferroelectric chiral ammonium salt for high-performance piezoelectric energy harvesting. MATERIALS HORIZONS 2023; 10:3153-3161. [PMID: 37227322 DOI: 10.1039/d3mh00444a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Three-dimensional printing (3DP) is an emerging technology to fabricate complex architectures, necessary to realize state-of-the-art flexible and wearable electronic devices. In this regard, top-performing devices containing organic ferro- and piezoelectric compounds are desired to circumvent significant shortcomings of conventional piezoceramics, e.g. toxicity and high-temperature device processibility. Herein, we report on a 3D-printed composite of a chiral ferroelectric organic salt {[Me3CCH(Me)NH3][BF4]} (1) with a biodegradable polycaprolactone (PCL) polymer that serves as a highly efficient piezoelectric nanogenerator (PENG). The ferroelectric property of 1 originates from its polar tetragonal space group P42, verified by P-E loop measurements. The ferroelectric domain characteristics of 1 were further probed by piezoresponse force microscopy (PFM), which gave characteristic 'butterfly' and hysteresis loops. The PFM amplitude vs. drive voltage measurements gave a relatively high magnitude of the converse piezoelectric coefficient for 1. PCL polymer composites with various weight percentages (wt%) of 1 were prepared and subjected to piezoelectric energy harvesting tests, which gave a maximum open-circuit voltage of 36.2 V and a power density of 48.1 μW cm-2 for the 10 wt% 1-PCL champion device. Furthermore, a gyroid-shaped 3D-printed 10 wt% 1-PCL composite was fabricated to test its practical utility, which gave an excellent output voltage of 41 V and a power density of 56.8 μW cm-2. These studies promise the potential of simple organic compounds for building PENG devices using advanced manufacturing technologies.
Collapse
Affiliation(s)
- Supriya Sahoo
- Department of Chemistry and Centre for Energy Science, Indian Institute of Science Education and Research (IISER), Pune, Dr Homi Bhabha Road, Pune - 411008, India.
| | - Premkumar Anil Kothavade
- Polymer Science and Engineering Division, CSIR-National Chemical Laboratory, Dr Homi Bhabha Road, Pune, 411008, Maharashtra, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002, India.
| | - Dipti R Naphade
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955-6900, Saudi Arabia.
| | - Arun Torris
- Polymer Science and Engineering Division, CSIR-National Chemical Laboratory, Dr Homi Bhabha Road, Pune, 411008, Maharashtra, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002, India.
| | - Balu Praveenkumar
- PZT Centre, Armament Research and Development Establishment, Dr Homi Bhabha Road, Pune - 411021, India.
| | - Jan K Zaręba
- Institute of Advanced Materials, Wrocław University of Science and Technology, Wrocław-50-370, Poland.
| | - Thomas D Anthopoulos
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955-6900, Saudi Arabia.
| | - Kadhiravan Shanmuganathan
- Polymer Science and Engineering Division, CSIR-National Chemical Laboratory, Dr Homi Bhabha Road, Pune, 411008, Maharashtra, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002, India.
| | - Ramamoorthy Boomishankar
- Department of Chemistry and Centre for Energy Science, Indian Institute of Science Education and Research (IISER), Pune, Dr Homi Bhabha Road, Pune - 411008, India.
| |
Collapse
|
9
|
He W, Yang Y, Li C, Wong WPD, Cimpoesu F, Toader AM, Wu Z, Wu X, Lin Z, Xu QH, Leng K, Stroppa A, Loh KP. Near-90° Switch in the Polar Axis of Dion-Jacobson Perovskites by Halide Substitution. J Am Chem Soc 2023. [PMID: 37315326 DOI: 10.1021/jacs.3c03921] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Ferroelectricity in two-dimensional hybrid (2D) organic-inorganic perovskites (HOIPs) can be engineered by tuning the chemical composition of the organic or inorganic components to lower the structural symmetry and order-disorder phase change. Less efforts are made toward understanding how the direction of the polar axis is affected by the chemical structure, which directly impacts the anisotropic charge order and nonlinear optical response. To date, the reported ferroelectric 2D Dion-Jacobson (DJ) [PbI4]2- perovskites exhibit exclusively out-of-plane polarization. Here, we discover that the polar axis in ferroelectric 2D Dion-Jacobson (DJ) perovskites can be tuned from the out-of-plane (OOP) to the in-plane (IP) direction by substituting the iodide with bromide in the lead halide layer. The spatial symmetry of the nonlinear optical response in bromide and iodide DJ perovskites was probed by polarized second harmonic generation (SHG). Density functional theory calculations revealed that the switching of the polar axis, synonymous with the change in the orientation of the sum of the dipole moments (DMs) of organic cations, is caused by the conformation change of organic cations induced by halide substitution.
Collapse
Affiliation(s)
- Weixin He
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
- Department of Physics, National University of Singapore, Singapore 117551, Singapore
| | - Yali Yang
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Chuanzhao Li
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon 999077, Hong Kong, China
| | - Walter P D Wong
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Fanica Cimpoesu
- Institute of Physical Chemistry of Romanian Academy, Splaiul Independentei 202, Bucharest 060021, Romania
| | - Ana Maria Toader
- Institute of Physical Chemistry of Romanian Academy, Splaiul Independentei 202, Bucharest 060021, Romania
| | - Zhenyue Wu
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Xiao Wu
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Zexin Lin
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Qing-Hua Xu
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Kai Leng
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon 999077, Hong Kong, China
| | - Alessandro Stroppa
- Consiglio Nazionale delle Ricerche, Institute for Superconducting and Innovative Materials and Devices (CNR-SPIN), c/o Department of Physical and Chemical Sciences, University of L'Aquila, Via Vetoio, I-67100 Coppito, L'Aquila, Italy
| | - Kian Ping Loh
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| |
Collapse
|
10
|
Wang B, He JH, Yu B, He X, Xue F. Piezoelectricity-modulated optical recombination dynamics of monolayer-MoS 2/GaN-film heterostructures. NANOSCALE 2023; 15:2036-2043. [PMID: 36520146 DOI: 10.1039/d2nr05850b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Dynamic manipulation of optoelectronic responses by mechanical stimuli is promising for developing wearable electronics and human-machine interfacing. Although 2D-3D hybrid heterostructures can bring advancements in optoelectronics, their dynamic optical responses to external strains remain rarely studied. Here, we demonstrate the strain-tuned recombination dynamics of monolayer-MoS2 and thin-film-GaN heterostructures. We find that optical excitons in the heterostructures, apart from trions, can be markedly modulated by strains. We argue that MoS2 piezoelectric dipoles across the interfaces lead to curved band diagrams, in which optical excitons dissociate into spatially separated quasi-particles and concurrently relocate to the maxima of valence bands and the minima of conduction bands. With the increase in tensile strains, the photoluminescence (PL) intensity of the heterostructures shows quenched responses. Noticeably, the change in PL spectra strongly depends on the directions of the applied strains because of the lateral piezoelectric periodicity of MoS2 flakes. This work not only helps in understanding the underlying physics of the decreased PL intensities upon applying strains but also demonstrates a feasible way (i.e., strains) to manipulate the PL efficiency of 2D-material-based optoelectronics.
Collapse
Affiliation(s)
- Baoyu Wang
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310020, China.
| | - Jr-Hau He
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Bin Yu
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310020, China.
| | - Xin He
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310020, China.
| | - Fei Xue
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310020, China.
| |
Collapse
|
11
|
Jin M, Zeng Z, Fu H, Wang S, Yin Z, Zhai X, Zhang Q, Du Y. Strain-Negligible Eu 2+ Doping Enabled Color-Tunable Harsh Condition-Resistant Perovskite Nanocrystals for Superior Light-Emitting Diodes. JACS AU 2023; 3:216-226. [PMID: 36711089 PMCID: PMC9875234 DOI: 10.1021/jacsau.2c00593] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Revised: 11/21/2022] [Accepted: 11/23/2022] [Indexed: 06/18/2023]
Abstract
Cesium lead halide (CsPbX3, X = Br, Cl, I) perovskite nanocrystals (NCs) possess tunable band gaps across the entire visible spectral range and are promising for various optoelectronic device applications. However, poor performance in adverse conditions limits their further development in practical optoelectronics. Herein, highly stable perovskite NCs are developed by doping europium(II) (Eu2+) into the B-site of CsPbBr3 with negligible lattice distortion/strain. Eu2+-doped CsPbBr3 NCs exhibit tunable green-to-cyan emissions, high photoluminescence quantum yield, and good resistance to harsh conditions, including ultraviolet irradiation, erosion of moisture, and corrosion of polar solvent molecules. In particular, the thermal stability of CsPbBr3 NCs after Eu2+ doping is greatly enhanced under continuous heating in air, while exhibiting the emissions of Eu2+. Furthermore, a Eu2+-doped CsPbBr3 NC-based cyan light-emitting diode is fabricated, which exhibits narrow exciton emission driven under different current densities. This work would open the avenue to develop the rational lanthanide ion doping strategy for further advancing perovskite nanomaterials toward practical applications.
Collapse
Affiliation(s)
- Mengdie Jin
- Tianjin
Key Lab for Rare Earth Materials and Applications, Center for Rare
Earth and Inorganic Functional Materials, Smart Sensing Interdisciplinary
Science Center, School of Materials Science and Engineering &
National Institute for Advanced Materials, Nankai University, Tianjin 300350, P.R. China
| | - Zhichao Zeng
- Tianjin
Key Lab for Rare Earth Materials and Applications, Center for Rare
Earth and Inorganic Functional Materials, Smart Sensing Interdisciplinary
Science Center, School of Materials Science and Engineering &
National Institute for Advanced Materials, Nankai University, Tianjin 300350, P.R. China
| | - Hao Fu
- College
of Chemistry, Nankai University, Tianjin 300071, P.R. China
| | - Siyuan Wang
- Tianjin
Key Lab for Rare Earth Materials and Applications, Center for Rare
Earth and Inorganic Functional Materials, Smart Sensing Interdisciplinary
Science Center, School of Materials Science and Engineering &
National Institute for Advanced Materials, Nankai University, Tianjin 300350, P.R. China
| | - Zongyou Yin
- Research
School of Chemistry, Australian National
University, Canberra ACT 2601, Australia
| | - Xinyun Zhai
- Tianjin
Key Lab for Rare Earth Materials and Applications, Center for Rare
Earth and Inorganic Functional Materials, Smart Sensing Interdisciplinary
Science Center, School of Materials Science and Engineering &
National Institute for Advanced Materials, Nankai University, Tianjin 300350, P.R. China
| | - Qian Zhang
- State
Key Laboratory of Eco-Hydraulics in Northwest Arid Region, Department
of Applied Chemistry, Xi’an University
of Technology, Xi’an 710048, P.R. China
| | - Yaping Du
- Tianjin
Key Lab for Rare Earth Materials and Applications, Center for Rare
Earth and Inorganic Functional Materials, Smart Sensing Interdisciplinary
Science Center, School of Materials Science and Engineering &
National Institute for Advanced Materials, Nankai University, Tianjin 300350, P.R. China
| |
Collapse
|
12
|
Chelil N, Sahnoun M, Benhalima Z, Larbi R, Eldin SM. Insights into the relationship between ferroelectric and photovoltaic properties in CsGeI 3 for solar energy conversion. RSC Adv 2023; 13:1955-1963. [PMID: 36712603 PMCID: PMC9833107 DOI: 10.1039/d2ra06860e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/30/2022] [Accepted: 01/03/2023] [Indexed: 01/13/2023] Open
Abstract
Materials such as oxide and halide perovskites that simultaneously exhibit spontaneous polarization and absorption of visible light are called photoferroelectrics. They hold great promise for the development of applications in optoelectronics, information storage, and energy conversion. Devices based on ferroelectric photovoltaic materials yield an open-circuit voltage that is much higher than the band gap of the corresponding active material owing to a strong internal electric field. Their efficiency has been proposed to exceed the Shockley-Queisser limit for ideal solar cells. In this paper, we present theoretical calculations of the photovoltaic properties of the ferroelectric phase of the inorganic germanium halide perovskite (CsGeI3). Firstly, the electronic, optical and ferroelectric properties were calculated using the FP-LAPW method based on density functional theory, and the modern theory of polarization based on the Berry phase approach, respectively. The photovoltaic performance was evaluated using the Spectroscopic Limited Maximum Efficiency (SLME) model based on the results of first-principles calculations, in which the power conversion efficiency and the photocurrent density-voltage (J-V) characteristics were estimated. The calculated results show that the valence band maximum (VBM) of CsGeI3 is mainly contributed by the I-5p and Ge-4s orbitals, whereas the conduction band is predominantly derived from Ge-4p orbitals. It can be seen that CsGeI3 exhibits a direct bandgap semiconductor at the symmetric point of Z with a value of 1.53 eV, which is in good agreement with previous experimental results. The ferroelectric properties were therefore investigated. With a switching energy barrier of 19.83 meV per atom, CsGeI3 has a higher theoretical ferroelectric polarization strength of 15.82 μC cm-2. The SLME calculation also shows that CsGeI3 has a high photoelectric conversion efficiency of over 28%. In addition to confirming their established favorable band gap and strong absorption, we demonstrate that CsGeI3 exhibits a large shift current bulk photovoltaic effect of up to 40 μA V-2 in the visible region. Thus, this material is a potential ferroelectric photovoltaic absorbed layer with high efficiency.
Collapse
Affiliation(s)
- N. Chelil
- Laboratoire de Physique Quantique de la Matière et Modélisation Mathématique (LPQ3M), University of MascaraAlgeria
| | - M. Sahnoun
- Laboratoire de Physique Quantique de la Matière et Modélisation Mathématique (LPQ3M), University of MascaraAlgeria
| | - Z. Benhalima
- Laboratoire de Physique Quantique de la Matière et Modélisation Mathématique (LPQ3M), University of MascaraAlgeria
| | - R. Larbi
- Laboratoire de Physique Quantique de la Matière et Modélisation Mathématique (LPQ3M), University of MascaraAlgeria
| | - Sayed M. Eldin
- Center of Research, Faculty of Engineering, Future University in EgyptNew Cairo 11835Egypt
| |
Collapse
|
13
|
Xie H, Kang C, Iqbal MA, Weng X, Wu K, Tang W, Qi L, Zeng YJ. Ferroelectric Tuning of ZnO Ultraviolet Photodetectors. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3358. [PMID: 36234488 PMCID: PMC9565710 DOI: 10.3390/nano12193358] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/31/2022] [Revised: 09/23/2022] [Accepted: 09/23/2022] [Indexed: 06/16/2023]
Abstract
The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection performance. This study proposes a strategy for ZnO ultraviolet (UV) photodetectors regulated by a ferroelectric gate. The ZnO nanowire (NW) UV photodetector was tuned by a 2D CuInP2S6 (CIPS) ferroelectric gate, which decreased the dark current and enhanced the responsivity and detectivity to 2.40 × 104 A/W and 7.17 × 1011 Jones, respectively. This strategy was also applied to a ZnO film UV photodetector that was tuned by a P(VDF-TrFE) ferroelectric gate. Lower power consumption and higher performance can be enabled by ferroelectric tuning of ZnO ultraviolet photodetectors, providing new inspiration for the fabrication of high-performance photodetectors.
Collapse
|
14
|
Jin T, Mao J, Gao J, Han C, Loh KP, Wee ATS, Chen W. Ferroelectrics-Integrated Two-Dimensional Devices toward Next-Generation Electronics. ACS NANO 2022; 16:13595-13611. [PMID: 36099580 DOI: 10.1021/acsnano.2c07281] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ferroelectric materials play an important role in a wide spectrum of semiconductor technologies and device applications. Two-dimensional (2D) van der Waals (vdW) ferroelectrics with surface-insensitive ferroelectricity that is significantly different from their traditional bulk counterparts have further inspired intensive interest. Integration of ferroelectrics into 2D-layered-material-based devices is expected to offer intriguing working principles and add desired functionalities for next-generation electronics. Herein, fundamental properties of ferroelectric materials that are compatible with 2D devices are introduced, followed by a critical review of recent advances on the integration of ferroelectrics into 2D devices. Representative device architectures and corresponding working mechanisms are discussed, such as ferroelectrics/2D semiconductor heterostructures, 2D ferroelectric tunnel junctions, and 2D ferroelectric diodes. By leveraging the favorable properties of ferroelectrics, a variety of functional 2D devices including ferroelectric-gated negative capacitance field-effect transistors, programmable devices, nonvolatile memories, and neuromorphic devices are highlighted, where the application of 2D vdW ferroelectrics is particularly emphasized. This review provides a comprehensive understanding of ferroelectrics-integrated 2D devices and discusses the challenges of applying them into commercial electronic circuits.
Collapse
Affiliation(s)
- Tengyu Jin
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Jingyu Mao
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Jing Gao
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Cheng Han
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Kian Ping Loh
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Wei Chen
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
- National University of Singapore (Suzhou) Research Institute, 377 Lin Quan Street, Suzhou Industrial Park, Suzhou 215123, P. R. China
| |
Collapse
|
15
|
Novel Rubber Composites Based on Copper Particles, Multi-Wall Carbon Nanotubes and Their Hybrid for Stretchable Devices. Polymers (Basel) 2022; 14:polym14183744. [PMID: 36145889 PMCID: PMC9505250 DOI: 10.3390/polym14183744] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/04/2022] [Revised: 08/31/2022] [Accepted: 09/04/2022] [Indexed: 02/07/2023] Open
Abstract
New technologies are constantly addressed in the scientific community for updating novel stretchable devices, such as flexible electronics, electronic packaging, and piezo-electric energy-harvesting devices. The device promoted in the present work was found to generate promising ~6V and durability of >0.4 million cycles. This stretchable device was based on rubber composites. These rubber composites were developed by solution mixing of room temperature silicone rubber (RTV-SR) and nanofiller, such as multi-wall carbon nanotube (MWCNT) and micron-sized copper particles and their hybrid. The hybrid composite consists of 50:50 of both fillers. The mechanical stretchability and compressive modulus of the composites were studied in detail. For example, the compressive modulus was 1.82 MPa (virgin) and increased at 3 per hundred parts of rubber (phr) to 3.75 MPa (MWCNT), 2.2 MPa (copper particles) and 2.75 MPa (hybrid). Similarly, the stretching ability for the composites used in fabricating devices was 148% (virgin) and changes at 3 phr to 144% (MWCNT), 230% (copper particles) and 199% (hybrid). Hence, the hybrid composite was found suitable with optimum stiffness and robust stretching ability to be useful for stretching electronic devices explored in this work. These improved properties were tested for a real-time stretchable device, such as a piezoelectric energy-harvesting device and their improved voltage output and durability were reported. In the end, a series of experiments conducted were summarized and a discussion on the best candidate with higher properties useful for prospective applications was reported.
Collapse
|
16
|
Huang A, Li Q, Li Z. Molecular Uniting Set Identified Characteristic (
MUSIC
) of Organic Optoelectronic Materials. CHINESE J CHEM 2022. [DOI: 10.1002/cjoc.202100843] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Arui Huang
- Hubei Key Lab on Organic and Polymeric Opto‐Electronic Materials, Sauvage Center for Molecular Sciences, Department of Chemistry, Wuhan University Wuhan 430072 China
| | - Qianqian Li
- Hubei Key Lab on Organic and Polymeric Opto‐Electronic Materials, Sauvage Center for Molecular Sciences, Department of Chemistry, Wuhan University Wuhan 430072 China
| | - Zhen Li
- Hubei Key Lab on Organic and Polymeric Opto‐Electronic Materials, Sauvage Center for Molecular Sciences, Department of Chemistry, Wuhan University Wuhan 430072 China
- Institute of Molecular Aggregation Science, Tianjin University Tianjin 300072 China
| |
Collapse
|
17
|
Dou Q, Mo J, Xu B, Gong N, Man T, Li Z, Bai G, Ma C, Qiu J, Hao J. Nonvolatile modulation of luminescence in perovskite oxide thin films by ferroelectric gating. OPTICS LETTERS 2022; 47:1578-1581. [PMID: 35363682 DOI: 10.1364/ol.451697] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2021] [Accepted: 02/19/2022] [Indexed: 06/14/2023]
Abstract
Nonvolatile and giant modulation of luminescence can be realized by the ferroelectric gating effect in a Ga3+/Pr3+ co-doped BaTiO3 ultra-thin film epitaxially grown on a [Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 single-crystallized substrate. The change behavior of the emission intensity matches that of the ferroelectric polarization hysteresis loop with a giant enhancement of over 13 times with negative polarization orientation. The interaction of O2- at the O2p orbital in the valence band and Pr3+ with injected holes by the ferroelectric gating effect promotes the formation of excited state O-, Pr4+, or Pr3+q. This ferroelectric gating method can promote the development of controllable photo-, electroluminescent, and other optoelectronic devices for display, sensing, communication, and so on.
Collapse
|
18
|
Chen W, Dong Z, Chen H, Shen J, Du X, Dong F, Zhou T, Huang W, Wu Z, Liu W, Zhang Y. Control of upconversion luminescence by tailoring energy migration in doped perovskite superlattices. OPTICS LETTERS 2022; 47:1250-1253. [PMID: 35230339 DOI: 10.1364/ol.452482] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2021] [Accepted: 01/24/2022] [Indexed: 06/14/2023]
Abstract
We describe an experimental investigation of photon upconversion (UC) in a series of perovskite BaTiO3/SrTiO3 superlattices doped with different lanthanide compositions. We show that UC emission can be effectively enhanced by precisely incorporating a set of lanthanide ions into separated layers rather than homogeneously distributing the dopant ions in the host lattice. The use of an inert layer in the superlattice can suppress deleterious energy cross-relaxation. Furthermore, UC emission can be rendered by controlling the energy migration mediated by the Yb-doped sublattice. These results demonstrate the opportunity to modulate energy migration and transfer processes through the rational design of superlattice structures.
Collapse
|
19
|
Lu L, Sun M, Wu T, Lu Q, Chen B, Huang B. All-inorganic perovskite nanocrystals: next-generation scintillation materials for high-resolution X-ray imaging. NANOSCALE ADVANCES 2022; 4:680-696. [PMID: 36131822 PMCID: PMC9417099 DOI: 10.1039/d1na00815c] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2021] [Accepted: 12/29/2021] [Indexed: 05/04/2023]
Abstract
With super strong penetrability, high-energy X-rays can be applied to probe the inner structure of target objects under nondestructive situations. Scintillation materials can down-convert X-rays into visible light, enabling the reception of photon signals and photoelectric conversion by common sensing arrays such as photomultiplier tubes and amorphous-Si photodiode matrixes. All-inorganic perovskite nanocrystals are emerging photovoltaic and scintillation materials, with tremendous light-conversion efficiency and tunable luminous properties, exhibiting great potential for high-quality X-ray imaging. Recent advancements in nanotechnology further accelerate the performance improvement of scintillation materials. In this review, we will provide a comprehensive overview of novel all-inorganic perovskite nano-scintillators in terms of potential applications in low-dose X-ray medical radiography. Compared with conventional scintillators, the merits/drawbacks, challenges, and scintillation performance control will be the focus of this article.
Collapse
Affiliation(s)
- Lu Lu
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR China
| | - Mingzi Sun
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR China
| | - Tong Wu
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR China
| | - Qiuyang Lu
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR China
| | - Baian Chen
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR China
| | - Bolong Huang
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR China
| |
Collapse
|
20
|
Finkel P, Cain MG, Mion T, Staruch M, Kolacz J, Mantri S, Newkirk C, Kavetsky K, Thornton J, Xia J, Currie M, Hase T, Moser A, Thompson P, Lucas CA, Fitch A, Cairney JM, Moss SD, Nisbet AGA, Daniels JE, Lofland SE. Simultaneous Large Optical and Piezoelectric Effects Induced by Domain Reconfiguration Related to Ferroelectric Phase Transitions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106827. [PMID: 34773926 DOI: 10.1002/adma.202106827] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2021] [Revised: 10/31/2021] [Indexed: 06/13/2023]
Abstract
Electrical switching of ferroelectric domains and subsequent domain wall motion promotes strong piezoelectric activity, however, light scatters at refractive index discontinuities such as those found at domain wall boundaries. Thus, simultaneously achieving large piezoelectric effect and high optical transmissivity is generally deemed infeasible. Here, it is demonstrated that the ferroelectric domains in perovskite Pb(In1/2 Nb1/2 )O3 -Pb(Mg1/3 Nb2/3 )O3 -PbTiO3 domain-engineered crystals can be manipulated by electrical field and mechanical stress to reversibly and repeatably, with small hysteresis, transform the opaque polydomain structure into a highly transparent monodomain state. This control of optical properties can be achieved at very low electric fields (less than 1.5 kV cm-1 ) and is accompanied by a large (>10 000 pm V-1 ) piezoelectric coefficient that is superior to linear state-of-the-art materials by a factor of three or more. The coexistence of tunable optical transmissivity and high piezoelectricity paves the way for a new class of photonic devices.
Collapse
Affiliation(s)
- Peter Finkel
- US Naval Research Laboratory, Washington, DC, 02375, USA
| | | | - Thomas Mion
- US Naval Research Laboratory, Washington, DC, 02375, USA
| | - Margo Staruch
- US Naval Research Laboratory, Washington, DC, 02375, USA
| | - Jakub Kolacz
- US Naval Research Laboratory, Washington, DC, 02375, USA
| | - Sukriti Mantri
- School of Materials Science and Engineering, University of New South Wales Sydney, Union Rd, Kensington, NSW, 2052, Australia
| | - Chad Newkirk
- Department of Physics, Rowan University, Glassboro, NJ, 08028-1701, USA
| | - Kyril Kavetsky
- Department of Physics, Rowan University, Glassboro, NJ, 08028-1701, USA
| | - John Thornton
- Defence Science and Technology Group, Aerospace Division, Fishermans Bend, VIC, 3207, Australia
| | - Junhai Xia
- Department of Mechanical Engineering, University of Sydney, Sydney, NSW, 2006, Australia
| | - Marc Currie
- US Naval Research Laboratory, Washington, DC, 02375, USA
| | - Thomas Hase
- Department of Physics, University of Warwick, Conventry, CV4 7AL, UK
| | - Alex Moser
- US Naval Research Laboratory, Washington, DC, 02375, USA
| | - Paul Thompson
- Oliver Lodge Laboratory, Department of Physics, University of Liverpool, Liverpool, L69 3BX, UK
- XMaS Beamline, European Synchrotron Radiation Facility, Grenoble, F-38043, France
| | - Christopher A Lucas
- Oliver Lodge Laboratory, Department of Physics, University of Liverpool, Liverpool, L69 3BX, UK
- XMaS Beamline, European Synchrotron Radiation Facility, Grenoble, F-38043, France
| | - Andy Fitch
- European Synchrotron Radiation Facility, 71 Avenue des Martyrs, CS40220, Grenoble Cedex 9, 38043, France
| | - Julie M Cairney
- Department of Mechanical Engineering, University of Sydney, Sydney, NSW, 2006, Australia
| | - Scott D Moss
- Defence Science and Technology Group, Aerospace Division, Fishermans Bend, VIC, 3207, Australia
| | | | - John E Daniels
- School of Materials Science and Engineering, University of New South Wales Sydney, Union Rd, Kensington, NSW, 2052, Australia
| | - Samuel E Lofland
- Department of Physics, Rowan University, Glassboro, NJ, 08028-1701, USA
| |
Collapse
|
21
|
Electroactive and photoluminescence of electrospun P(VDF-HFP) composite nanofibers with Eu3+ complex and BaTiO3 nanoparticles. POLYMER 2022. [DOI: 10.1016/j.polymer.2021.124496] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
|
22
|
Jiang M, Zhang Q, Zhang B, Feng Y. Encapsulation of perovskite quantum dots into LnIII-incorporated polymer matrix to achieve white light emission. NEW J CHEM 2022. [DOI: 10.1039/d1nj05832k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
All-inorganic perovskite quantum dots (PQDs) with high quantum efficiency and broad spectral tunability showing potential applications in light-emitting diodes (LEDs) are promising luminescent materials. However, poor stability has also become...
Collapse
|
23
|
Jiang X, Xu Z, Zheng Y, Zeng J, Chen KQ, Feng YX. First-principles study of exciton self-trapping and electric polarization in one-dimensional organic lead halide perovskites. Phys Chem Chem Phys 2022; 24:17323-17328. [DOI: 10.1039/d2cp01315k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Revealing the origin of self-trapped excitons is a prerequisite for further improving the photoluminescence efficiency of low-dimensional organic perovskite. Here, the microscopic formation mechanism of intrinsic self-trapped excitons in one-dimensional...
Collapse
|
24
|
Chen XY, Ling SW, Xu HK, Che YD, Chen LF, Xu XF, Tang JJ, Ye JH, Ji H, Yan DL. Theoretical study on the ferroelectric and light absorption properties of Li 2SbBiO 6 for harvesting visible light. RSC Adv 2022; 12:32027-32034. [PMID: 36415548 PMCID: PMC9644050 DOI: 10.1039/d2ra05114a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/16/2022] [Accepted: 10/24/2022] [Indexed: 11/10/2022] Open
Abstract
Ferroelectric oxides with large bandgaps have restricted applications in photovoltaic and photocatalytic fields. Based on recent experiments with the ferroelectric compound, LiSbO3, the stability and optoelectronic properties of a new ferroelectric compound, namely Li2SbBiO6, are investigated in this study. The calculated results demonstrate that Li2SbBiO6 satisfies the stability conditions of the elastic coefficients and phonon dynamics. Li2SbBiO6 maintains the ferroelectric polarization strength of LiSbO3 and significantly reduces the bandgap, and thus has been explored for applications in photovoltaic and photocatalytic fields. Li2SbBiO6 is a new potential ferroelectric oxide for harvesting visible light owing to its suitable bandgap and a large hole–electron effective mass ratio. Li2SbBiO6 slightly improves the ferroelectric polarization of LiSbO3 and significantly reduces the band gap to expand its applications in photovoltaic and photocatalysis under visible light.![]()
Collapse
Affiliation(s)
- Xing-Yuan Chen
- Department of Physics, School of Science, Guangdong University of Petrochemical Technology, Maoming, Guangdong 525000, PR China
| | - Shi-Wu Ling
- Department of Physics, School of Science, Guangdong University of Petrochemical Technology, Maoming, Guangdong 525000, PR China
| | - Hua-Kai Xu
- Department of Physics, School of Science, Guangdong University of Petrochemical Technology, Maoming, Guangdong 525000, PR China
| | - You-Da Che
- Department of Physics, School of Science, Guangdong University of Petrochemical Technology, Maoming, Guangdong 525000, PR China
| | - Li-Fang Chen
- Department of Physics, School of Science, Guangdong University of Petrochemical Technology, Maoming, Guangdong 525000, PR China
| | - Xiang-Fu Xu
- Department of Physics, School of Science, Guangdong University of Petrochemical Technology, Maoming, Guangdong 525000, PR China
| | - Jia-Jun Tang
- School of Physics, South China University of Technology, Guangzhou 510640, PR China
| | - Jia-Hui Ye
- SINOPEC Guangzhou Branch, Guangzhou 510726, PR China
| | - Hong Ji
- Department of Physics, School of Science, Guangdong University of Petrochemical Technology, Maoming, Guangdong 525000, PR China
| | - Dan-Lin Yan
- Department of Physics, School of Science, Guangdong University of Petrochemical Technology, Maoming, Guangdong 525000, PR China
| |
Collapse
|
25
|
Dong Y, Dong S, Liu B, Yu C, Liu J, Yang D, Yang P, Lin J. 2D Piezoelectric Bi 2 MoO 6 Nanoribbons for GSH-Enhanced Sonodynamic Therapy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2106838. [PMID: 34655115 DOI: 10.1002/adma.202106838] [Citation(s) in RCA: 131] [Impact Index Per Article: 43.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2021] [Indexed: 06/13/2023]
Abstract
Reducing the scavenging capacity of reactive oxygen species (ROS) and elevating ROS production are two primary goals of developing novel sonosensitizers for sonodynamic therapy (SDT). Hence, ultrathin 2D Bi2 MoO6 -poly(ethylene glycol) nanoribbons (BMO NRs) are designed as piezoelectric sonosensitizers for glutathione (GSH)-enhanced SDT. In cancer cells, BMO NRs can consume endogenous GSH to disrupt redox homeostasis, and the GSH-activated BMO NRs (GBMO) exhibit an oxygen-deficient structure, which can promote the separation of electron-hole pairs, thereby enhancing the efficiency of ROS production in SDT. The ultrathin GBMO NRs are piezoelectric, in which ultrasonic waves introduce mechanical strain to the nanoribbons, resulting in piezoelectric polarization and band tilting, thus accelerating toxic ROS production. The as-synthesized BMO NRs enable excellent computed tomography imaging of tumors and significant tumor suppression in vitro and in vivo. A piezoelectric Bi2 MoO6 sonosensitizer-mediated two-step enhancement SDT process, which is activated by endogenous GSH and amplified by exogenous ultrasound, is proposed. This process not only provides new options for improving SDT but also broadens the application of 2D piezoelectric materials as sonosensitizers in SDT.
Collapse
Affiliation(s)
- Yushan Dong
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Shuming Dong
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Bin Liu
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Chenghao Yu
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Jing Liu
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Dan Yang
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Piaoping Yang
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Jun Lin
- State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
| |
Collapse
|
26
|
Ali Shah SA, Sayyad MH, Sun J, Guo Z. Recent advances and emerging trends of rare-earth-ion doped spectral conversion nanomaterials in perovskite solar cells. J RARE EARTH 2021. [DOI: 10.1016/j.jre.2021.12.001] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
|
27
|
Abstract
Electro-responsive actuators (ERAs) hold great promise for cutting-edge applications in e-skins, soft robots, unmanned flight, and in vivo surgery devices due to the advantages of fast response, precise control, programmable deformation, and the ease of integration with control circuits. Recently, considering the excellent physical/chemical/mechanical properties (e.g., high carrier mobility, strong mechanical strength, outstanding thermal conductivity, high specific surface area, flexibility, and transparency), graphene and its derivatives have emerged as an appealing material in developing ERAs. In this review, we have summarized the recent advances in graphene-based ERAs. Typical the working mechanisms of graphene ERAs have been introduced. Design principles and working performance of three typical types of graphene ERAs (e.g., electrostatic actuators, electrothermal actuators, and ionic actuators) have been comprehensively summarized. Besides, emerging applications of graphene ERAs, including artificial muscles, bionic robots, human-soft actuators interaction, and other smart devices, have been reviewed. At last, the current challenges and future perspectives of graphene ERAs are discussed.
Collapse
|
28
|
Yan P, Qin Y, Xu Z, Han F, Wang Y, Wen Z, Zhang Y, Zhang S. Highly Transparent Eu-Doped 0.72PMN-0.28PT Ceramics with Excellent Piezoelectricity. ACS APPLIED MATERIALS & INTERFACES 2021; 13:54210-54216. [PMID: 34729978 DOI: 10.1021/acsami.1c17262] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The 0.975[0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3]-0.025Eu2O3 ceramics were prepared by a two-step sintering process including oxygen sintering and hot-pressing. An ultrahigh piezoelectric charge coefficient of 1400 pC/N and a superior optical transmittance up to 68% were simultaneously achieved. The underlying mechanism was discussed from a microstructural perspective, where the watermark domain configuration with a small domain size is responsible for the high optical transmission, while the large remanent polarization and dielectric constant and the introduced tetragonal phase with a parallel stripe domain structure are believed to synergistically contribute to the high piezoelectric coefficients. This work demonstrates that the rare-earth dopant in the PMN-PT ceramic system is conducive to enhanced transparency and piezoelectricity.
Collapse
Affiliation(s)
- Peikun Yan
- College of Physics, Key Laboratory of Photonics Materials and Technology in Universities of Shandong, Qingdao University, Qingdao 266071, P. R. China
| | - Yalin Qin
- College of Physics, Key Laboratory of Photonics Materials and Technology in Universities of Shandong, Qingdao University, Qingdao 266071, P. R. China
| | - Zhiyu Xu
- College of Physics, Key Laboratory of Photonics Materials and Technology in Universities of Shandong, Qingdao University, Qingdao 266071, P. R. China
| | - Fuxuan Han
- College of Physics, Key Laboratory of Photonics Materials and Technology in Universities of Shandong, Qingdao University, Qingdao 266071, P. R. China
| | - Yaqi Wang
- College of Physics, Key Laboratory of Photonics Materials and Technology in Universities of Shandong, Qingdao University, Qingdao 266071, P. R. China
| | - Zheng Wen
- College of Physics, Key Laboratory of Photonics Materials and Technology in Universities of Shandong, Qingdao University, Qingdao 266071, P. R. China
| | - Yongcheng Zhang
- College of Physics, Key Laboratory of Photonics Materials and Technology in Universities of Shandong, Qingdao University, Qingdao 266071, P. R. China
| | - Shujun Zhang
- Institute for Superconductor and Electronic Materials, Australia Institute of Innovative Materials, University of Wollongong, Wollongong, NSW 2500, Australia
| |
Collapse
|
29
|
Sahoo S, Vijayakanth T, Kothavade P, Dixit P, Zaręba JK, Shanmuganathan K, Boomishankar R. Ferroelectricity and Piezoelectric Energy Harvesting of Hybrid A 2BX 4-Type Halogenocuprates Stabilized by Phosphonium Cations. ACS MATERIALS AU 2021; 2:124-131. [PMID: 36855770 PMCID: PMC9888644 DOI: 10.1021/acsmaterialsau.1c00046] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Perovskite-structured compounds containing organic cations and inorganic anions have gained prominence as materials for next-generation electronic and energy devices. Hybrid materials possessing ferro- and piezoelectric properties are in recent focus for mechanical energy harvesting (nanogenerator) applications. Here, we report the ferroelectric behavior of A2BX4-type halogenocuprate materials supported by heteroleptic phosphonium cations. These lead-free discrete Cu(II) halides [Ph3MeP]2[CuCl4] (1) and [Ph3MeP]2[CuBr4] (2) exhibit a remnant polarization (P r) of 17.16 and 26.02 μC cm-2, respectively, at room temperature. Furthermore, flexible polymer films were prepared with various weight percentage (wt %) compositions of 1 in thermoplastic polyurethane (TPU) and studied for mechanical energy harvesting applications. A highest peak-to-peak voltage output of 25 V and power density of 14.1 μW cm-2 were obtained for the optimal 15 wt % 1-TPU composite film. The obtained output voltages were utilized for charging a 100 μF electrolytic capacitor that reaches its maximum charging point within 30 s with sizable stored energies and accumulated charges.
Collapse
Affiliation(s)
- Supriya Sahoo
- †Department
of Chemistry and ‡Centre for Energy Science, Indian Institute
of Science Education and Research (IISER), Dr. Homi Bhabha Road, Pune 411008, India
| | - Thangavel Vijayakanth
- †Department
of Chemistry and ‡Centre for Energy Science, Indian Institute
of Science Education and Research (IISER), Dr. Homi Bhabha Road, Pune 411008, India
| | - Premkumar Kothavade
- Polymer
Science and Engineering Division, CSIR-National
Chemical Laboratory, Dr. Homi Bhabha Road, Pune 411008, India,Academy
of Scientific and Innovative Research, Ghaziabad 201002, India
| | - Prashant Dixit
- PZT
Centre, Armament Research and Development
Establishment, Dr. Homi Bhabha Road, Pune 411021, India
| | - Jan K. Zaręba
- Advanced
Materials Engineering and Modelling Group, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego
27, 50-370 Wrocław, Poland,
| | - Kadhiravan Shanmuganathan
- Polymer
Science and Engineering Division, CSIR-National
Chemical Laboratory, Dr. Homi Bhabha Road, Pune 411008, India,Academy
of Scientific and Innovative Research, Ghaziabad 201002, India,
| | - Ramamoorthy Boomishankar
- †Department
of Chemistry and ‡Centre for Energy Science, Indian Institute
of Science Education and Research (IISER), Dr. Homi Bhabha Road, Pune 411008, India,
| |
Collapse
|
30
|
Gupta R, Sahoo S, Deswal S, Kothavade P, Dixit P, Zaręba JK, Shanmuganathan K, Boomishankar R. A Flexible Energy Harvester from an Organic Ferroelectric Ammonium Salt. Chem Asian J 2021; 16:4122-4129. [PMID: 34699132 DOI: 10.1002/asia.202101128] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/29/2021] [Revised: 10/22/2021] [Indexed: 11/05/2022]
Abstract
Organic ferroelectrics due to their low cost, easy preparation, light weight, high flexibility and phase stability are gaining tremendous attention in the field of portable electronics. In this work, we report the synthesis, structure and ferroelectric behavior of a two-component ammonium salt 2, containing a bulky [Bn(4-BrBn)NMe2 ]+ (Bn=benzyl and 4-BrBn=4-bromobenzyl) cation and tetrahedral (BF4 )- anion. The structural analysis revealed the presence of rich non-classical C-H⋅⋅⋅F and C-H⋅⋅⋅Br interactions in this molecule that were quantified by Hirshfeld surface analysis. The polarization (P) vs. electric field (E) hysteresis loop measurements on 2 gave a remnant polarization (Pr ) of 14.4 μC cm-2 at room temperature. Flexible polymer composites with various (5, 10, 15 and 20) weight percentages (wt%) of 2 in thermoplastic polyurethane (TPU) were prepared and tested for mechanical energy harvesting applications. A notable peak-to-peak output voltage of 20 V, maximum current density of 1.1 μA cm-2 and power density of 21.1 μW cm-2 were recorded for the 15 wt% 2-TPU composite device. Furthermore, the voltage output generated from this device was utilized to rapidly charge a 100 μF capacitor, with stored energies and measured charges of 156 μJ and 121.6 μC, respectively.
Collapse
Affiliation(s)
- Rishabh Gupta
- Department of Chemistry, Indian Institute of Science Education and Research (IISER), Pune, Dr. Homi Bhabha Road, Pune, 411008, India
| | - Supriya Sahoo
- Department of Chemistry, Indian Institute of Science Education and Research (IISER), Pune, Dr. Homi Bhabha Road, Pune, 411008, India
| | - Swati Deswal
- Department of Chemistry, Indian Institute of Science Education and Research (IISER), Pune, Dr. Homi Bhabha Road, Pune, 411008, India
| | - Premkumar Kothavade
- Polymer Science and Engineering Division, CSIR-National Chemical Laboratory, Dr. Homi Bhabha Road, Pune, 411008, India.,Academy of Scientific and Innovative Research, Ghaziabad, 201002, India
| | - Prashant Dixit
- PZT Centre, Armament Research and Development Establishment, Dr. Homi Bhabha Road, Pune, 411021, India
| | - Jan K Zaręba
- Advanced Materials Engineering and Modelling Group, Wrocław University of Science and Technology, Wybrzeże, Wyspiańskiego 27, 50-370, Wrocław, Poland
| | - Kadhiravan Shanmuganathan
- Polymer Science and Engineering Division, CSIR-National Chemical Laboratory, Dr. Homi Bhabha Road, Pune, 411008, India.,Academy of Scientific and Innovative Research, Ghaziabad, 201002, India
| | - Ramamoorthy Boomishankar
- Department of Chemistry, Indian Institute of Science Education and Research (IISER), Pune, Dr. Homi Bhabha Road, Pune, 411008, India.,Centre for Energy Science, Indian Institute of Science Education and Research (IISER), Pune, Dr. Homi Bhabha Road, Pune, 411008, India
| |
Collapse
|
31
|
Du Y, Cao D, Liu Y, Wang Q. Increased dielectric performance of PVDF-based composites by electrochemical exfoliated graphite additives. NANOTECHNOLOGY 2021; 32:505204. [PMID: 34547731 DOI: 10.1088/1361-6528/ac28d9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/23/2021] [Accepted: 09/21/2021] [Indexed: 06/13/2023]
Abstract
Adding conductive graphene into polyvinyliden1 fluoride (PVDF) is an effective method to improve the dielectric properties. However, the high conductivity and uniform distribution of graphene in PVDF matrix still meet challenges. In this work, electrochemical exfoliated graphite (EEG) with good conductivity and solution dispersion is used to prepare PVDF/EEG films. By this method no specific conditions are needed such as reduction or hot press. The dielectric properties and flexibility of PVDF/EEG films of different concentrations of EEG are investigated. Especially, when EEG content is 2.6 wt%, composite film has a high dielectric constant of 86 and a low dielectric loss of 0.9 (100 Hz). Simultaneously, the tensile strength of the film was up to 55.1 MPa. The preparation method is simple and convenient, and the obtained material has high dielectric constant and tensile strength. This method paves the way for the application of flexible electronic sensing equipment.
Collapse
Affiliation(s)
- Yuanzhen Du
- Zhenjiang Key Laboratory of Advanced Sensing Materials and Devices, Jiangsu University, Zhenjiang 212013, People's Republic of China
| | - Dawei Cao
- Zhenjiang Key Laboratory of Advanced Sensing Materials and Devices, Jiangsu University, Zhenjiang 212013, People's Republic of China
| | - Yuan Liu
- Zhenjiang Key Laboratory of Advanced Sensing Materials and Devices, Jiangsu University, Zhenjiang 212013, People's Republic of China
| | - Quan Wang
- Zhenjiang Key Laboratory of Advanced Sensing Materials and Devices, Jiangsu University, Zhenjiang 212013, People's Republic of China
- State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
| |
Collapse
|
32
|
Huang Q, Chen Z, Cabral MJ, Luo H, Liu H, Zhang S, Li Y, Mai YW, Ringer SP, Liao X. Manipulating ferroelectric behaviors via electron-beam induced crystalline defects. NANOSCALE 2021; 13:14330-14336. [PMID: 34477716 DOI: 10.1039/d1nr04300e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Ferroelectric nanoplates are attractive for applications in nanoelectronic devices. Defect engineering has been an effective way to control and manipulate ferroelectric properties in nanoscale devices. Defects can act as pinning centers for ferroelectric domain wall motion, altering the switching properties and domain dynamics of ferroelectrics. However, there is a lack of detailed investigation on the interactions between defects and domain walls in ferroelectric nanoplates due to the limitation of previous characterization techniques, which impedes the development of defect engineering in ferroelectric nanodevices. In this study, we applied in situ biasing transmission electron microscopy to explore how dislocation loops, which were judiciously introduced into barium titanate nanoplates via electron beam irradiation, affect the motion of ferroelectric domain walls. The results show that the motion was dramatically suppressed by these localized defects, because of the local strain fields induced by the defects. The pinning effect can be further enhanced by multiple domain walls embedded with defect arrays. These results indicate the possibility of manipulating domain switching in ferroelectric nanoplates via the electron beam.
Collapse
Affiliation(s)
- Qianwei Huang
- School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Darlington, NSW 2008, Australia.
| | | | | | | | | | | | | | | | | | | |
Collapse
|
33
|
Shi L, Wang H, Ma X, Wang Y, Wang F, Zhao D, Shen D. The Deformation Behavior and Bending Emissions of ZnO Microwire Affected by Deformation-Induced Defects and Thermal Tunneling Effect. SENSORS (BASEL, SWITZERLAND) 2021; 21:5887. [PMID: 34502777 PMCID: PMC8434524 DOI: 10.3390/s21175887] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/19/2021] [Revised: 08/25/2021] [Accepted: 08/26/2021] [Indexed: 11/16/2022]
Abstract
The realization of electrically pumped emitters at micro and nanoscale, especially with flexibility or special shapes is still a goal for prospective fundamental research and application. Herein, zinc oxide (ZnO) microwires were produced to investigate the luminescent properties affected by stress. To exploit the initial stress, room temperature in situ elastic bending stress was applied on the microwires by squeezing between the two approaching electrodes. A novel unrecoverable deformation phenomenon was observed by applying a large enough voltage, resulting in the formation of additional defects at bent regions. The electrical characteristics of the microwire changed with the applied bending deformation due to the introduction of defects by stress. When the injection current exceeded certain values, bright emission was observed at bent regions, ZnO microwires showed illumination at the bent region priority to straight region. The bent emission can be attributed to the effect of thermal tunneling electroluminescence appeared primarily at bent regions. The physical mechanism of the observed thermoluminescence phenomena was analyzed using theoretical simulations. The realization of electrically induced deformation and the related bending emissions in single microwires shows the possibility to fabricate special-shaped light sources and offer a method to develop photoelectronic devices.
Collapse
Affiliation(s)
- Linlin Shi
- State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, No. 7186 Wei-Xing Road, Changchun 130022, China; (H.W.); (X.M.)
| | - Hong Wang
- State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, No. 7186 Wei-Xing Road, Changchun 130022, China; (H.W.); (X.M.)
| | - Xiaohui Ma
- State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, No. 7186 Wei-Xing Road, Changchun 130022, China; (H.W.); (X.M.)
| | - Yunpeng Wang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, China; (Y.W.); (F.W.); (D.Z.); (D.S.)
| | - Fei Wang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, China; (Y.W.); (F.W.); (D.Z.); (D.S.)
| | - Dongxu Zhao
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, China; (Y.W.); (F.W.); (D.Z.); (D.S.)
| | - Dezhen Shen
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, China; (Y.W.); (F.W.); (D.Z.); (D.S.)
| |
Collapse
|
34
|
Zhang W, Qiu F, Li Y, Zhang R, Liu H, Li L, Xie J, Hu W. Lattice Defect Engineering Enables Performance-Enhanced MoS 2 Photodetection through a Paraelectric BaTiO 3 Dielectric. ACS NANO 2021; 15:13370-13379. [PMID: 34283558 DOI: 10.1021/acsnano.1c03402] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Carrier mobility and density are intrinsically important in nanophoto/electronic devices. High-dielectric-constant coupled polarization-field gate ferroelectrics are frequently studied and partially capable in achieving large-scale tuning of photoresponse, but their light absorption and carrier density seem generally ineffective. This raises questions about whether a similarly high-dielectric-constant paraelectric gate dielectric could enable tuning and how the principles involved could be established. In this study, by deliberately introducing lattice defects in high-dielectric-constant paraelectric, cubic BaTiO3 (c-BTO) was explored to fabricate MoS2 photodetectors with ultrahigh detection ability and outstanding field-effect traits. An organic-metal-based spin-coating cum annealing method was used for the c-BTO synthesis, with an optimized thickness (300 nm), by introducing lattice defects properly but maintaining a large dielectric constant (55 at 1k Hz) and low dielectric loss (0.06 at 1k Hz), which renders the enhanced visible-light region absorption. As a result of the synergistically enhanced mobility and photoabsorption, the MoS2/BTO FET exhibits promising merits, for example, on/off ratio, subthreshold swing, and mobilities for high-performance photodetectors with excellent responsivity (600 AW-1) and detectivity (1.25 × 1012 Jones). Thus, this work facilitates the establishment of a lattice defect induced sub-bandgap absorption landmap for synergistically enhanced photoresponse for high-performance photodetector exploration.
Collapse
Affiliation(s)
- Wan Zhang
- Key Laboratory of LCR Materials and Devices of Yunnan Province, National Centre for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University Kunming 650500, P.R. China
| | - Feng Qiu
- Key Laboratory of LCR Materials and Devices of Yunnan Province, National Centre for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University Kunming 650500, P.R. China
| | - Yong Li
- Key Laboratory of LCR Materials and Devices of Yunnan Province, National Centre for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University Kunming 650500, P.R. China
| | - Rui Zhang
- Key Laboratory of LCR Materials and Devices of Yunnan Province, National Centre for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University Kunming 650500, P.R. China
| | - Huan Liu
- Key Laboratory of LCR Materials and Devices of Yunnan Province, National Centre for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University Kunming 650500, P.R. China
| | - Lun Li
- Key Laboratory of LCR Materials and Devices of Yunnan Province, National Centre for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University Kunming 650500, P.R. China
| | - Jiyang Xie
- Key Laboratory of LCR Materials and Devices of Yunnan Province, National Centre for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University Kunming 650500, P.R. China
| | - Wanbiao Hu
- Key Laboratory of LCR Materials and Devices of Yunnan Province, National Centre for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University Kunming 650500, P.R. China
| |
Collapse
|
35
|
Sun Y, Niu G, Ren W, Meng X, Zhao J, Luo W, Ye ZG, Xie YH. Hybrid System Combining Two-Dimensional Materials and Ferroelectrics and Its Application in Photodetection. ACS NANO 2021; 15:10982-11013. [PMID: 34184877 DOI: 10.1021/acsnano.1c01735] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Photodetectors are one of the most important components for a future "Internet-of-Things" information society. Compared to the mainstream semiconductor-based photodetectors, emerging devices based on two-dimensional (2D) materials and ferroelectrics as well as their hybrid systems have been extensively studied in recent decades due to their outstanding performances and related interesting physical, electrical, and optoelectronic phenomena. In this paper, we review the photodetection based on 2D materials and ferroelectric hybrid systems. The fundamentals of 2D and ferroelectric materials as well as the interaction in the hybrid system will be introduced. Ferroelectricity modulated optoelectronic properties in the hybrid system will be discussed in detail. After the basics and figures of merit of photodetectors are summarized, the 2D-ferroelectrics devices with different structures including p-n diodes, Schottky diodes, and field-effect transistors will be reviewed and compared. The polarization of ferroelectrics offers the possibility of the modulation and enhancement of the photodetection in the hybrid detectors, which will be discussed in depth. Finally, the challenges and perspectives of the photodetectors based on 2D ferroelectrics will be proposed. This Review outlines the important aspects of the recent development of the hybrid system of 2D and ferroelectric materials, which could interact with each other and thus lead to photodetectors with higher performances. Such a Review will be helpful for the research of emerging physical phenomena and for the design of multifunctional nanoscale electronic and optoelectronic devices.
Collapse
Affiliation(s)
- Yanxiao Sun
- Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049, Shaanxi, P. R. China
| | - Gang Niu
- Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049, Shaanxi, P. R. China
| | - Wei Ren
- Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049, Shaanxi, P. R. China
| | - Xiangjian Meng
- National Laboratory for Infrared Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, P. R. China
| | - Jinyan Zhao
- Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049, Shaanxi, P. R. China
| | - Wenbo Luo
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China
| | - Zuo-Guang Ye
- Department of Chemistry and 4D Laboratories, Simon Fraser University, Burnaby V5A 1S6, British Columbia, Canada
| | - Ya-Hong Xie
- Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles 90024, California, United States
| |
Collapse
|
36
|
Ma C, Wang Y, Zhang J, Hu Y, Zhai Z, Wu J, Zhou W, Lv X. Photoluminescence and optical temperature sensing properties of Dy 3+-doped Na 0.5Bi 0.5TiO 3 multifunctional ferroelectric ceramics. SPECTROCHIMICA ACTA. PART A, MOLECULAR AND BIOMOLECULAR SPECTROSCOPY 2021; 254:119636. [PMID: 33751996 DOI: 10.1016/j.saa.2021.119636] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2021] [Revised: 02/16/2021] [Accepted: 02/18/2021] [Indexed: 06/12/2023]
Abstract
A series of Dy3+ doped Na0.5Bi0.5TiO3 (NBT: xDy3+, x = 0.003-0.018) lead-free ferroelectric ceramics were successfully prepared by a solid-state reaction method. The Dy3+ ions composition dependent photoluminescence properties were systematically studied. All the samples display intense characteristic emission of Dy3+ under an excitation wavelength of 454 nm, which are attributed to the transitions of 4F9/2 → 6HJ/2 (J = 13, 11 and 9). All the samples show strong orange-yellow emission, which could be applied to warm white light hopefully. When the content of Dy3+ is equal to 0.012, the ceramic has the optimal luminous performance. Remarkable thermal quenching of the luminous intensity ceramic occurs as the temperature is higher than initial temperature 293 K. Furthermore, Dy3+ activated photoluminescence performance combined with the presence of ferroelectricity in the NBT host can be applied to developing non-contact optical temperature sensitive materials and other future novel optoelectronic devices.
Collapse
Affiliation(s)
- Chunlin Ma
- School of Physics and Electronic Electrical Engineering, Huaiyin Normal University, Huaian 223001, People's Republic of China.
| | - Yao Wang
- School of Physics and Electronic Electrical Engineering, Huaiyin Normal University, Huaian 223001, People's Republic of China
| | - Jia Zhang
- School of Physics and Electronic Electrical Engineering, Huaiyin Normal University, Huaian 223001, People's Republic of China
| | - Ying Hu
- School of Physics and Electronic Electrical Engineering, Huaiyin Normal University, Huaian 223001, People's Republic of China
| | - Zhangyin Zhai
- School of Physics and Electronic Electrical Engineering, Huaiyin Normal University, Huaian 223001, People's Republic of China
| | - Jin Wu
- School of Physics and Electronic Electrical Engineering, Huaiyin Normal University, Huaian 223001, People's Republic of China
| | - Weiping Zhou
- School of Materials Science and Engineering, Nanchang University, Nanchang 330031, People's Republic of China.
| | - Xuewei Lv
- School of Computer Science and Technology, Huaiyin Normal University, Huaian 223001, People's Republic of China
| |
Collapse
|
37
|
Structural evolution and phase transition of Sr3Sn2O7 doped with Ca. Chem Phys Lett 2021. [DOI: 10.1016/j.cplett.2021.138319] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
|
38
|
Cai W, Wang J, He Y, Liu S, Xiong Q, Liu Z, Zhang Q. Strain-Modulated Photoelectric Responses from a Flexible α-In 2Se 3/3R MoS 2 Heterojunction. NANO-MICRO LETTERS 2021; 13:74. [PMID: 34138284 PMCID: PMC8128968 DOI: 10.1007/s40820-020-00584-1] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/05/2020] [Accepted: 12/08/2020] [Indexed: 06/12/2023]
Abstract
Semiconducting piezoelectric α-In2Se3 and 3R MoS2 have attracted tremendous attention due to their unique electronic properties. Artificial van der Waals (vdWs) heterostructures constructed with α-In2Se3 and 3R MoS2 flakes have shown promising applications in optoelectronics and photocatalysis. Here, we present the first flexible α-In2Se3/3R MoS2 vdWs p-n heterojunction devices for photodetection from the visible to near infrared region. These heterojunction devices exhibit an ultrahigh photoresponsivity of 2.9 × 103 A W-1 and a substantial specific detectivity of 6.2 × 1010 Jones under a compressive strain of - 0.26%. The photocurrent can be increased by 64% under a tensile strain of + 0.35%, due to the heterojunction energy band modulation by piezoelectric polarization charges at the heterojunction interface. This work demonstrates a feasible approach to enhancement of α-In2Se3/3R MoS2 photoelectric response through an appropriate mechanical stimulus.
Collapse
Affiliation(s)
- Weifan Cai
- Center for Micro- and Nano-Electronics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Jingyuan Wang
- Center for Micro- and Nano-Electronics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yongmin He
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Sheng Liu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 639798, Singapore
| | - Qihua Xiong
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 639798, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Qing Zhang
- Center for Micro- and Nano-Electronics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
| |
Collapse
|
39
|
Chen Q, Lai D, He L, Li E, Liu Y, Zeng H, Chen H, Guo T. High-Performance Vertical Organic Phototransistors Enhanced by Ferroelectrics. ACS APPLIED MATERIALS & INTERFACES 2021; 13:1035-1042. [PMID: 33378165 DOI: 10.1021/acsami.0c18281] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Organic phototransistors with high sensitivity and responsivity to light irradiance have great potential applications in national defense, meteorology, industrial manufacturing, and medical security. However, undesired dark current and photoresponsivity limit their practical applications. Here, a novel vertical organic phototransistor combined with ferroelectric materials is developed. The device structure has nanometer channel length, which can effectively separate photogenerated carriers and reduce the probability of carrier recombination and defect scattering, thus improving the device performance of phototransistors. Moreover, by inserting the poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) ferroelectric layer, the Schottky barrier at the interface between the semiconductor and source can be adjusted by the polarization of the external electric field, which can effectively reduce the dark current of the phototransistor to further improve the device performance. Therefore, our phototransistors exhibit a high photoresponsivity of more than 5.7 × 105A/W, an outstanding detectivity of 1.15 × 1018 Jones, and an excellent photosensitivity of 5 × 107 under 760 nm light illumination, which are better than those of conventional lateral organic phototransistors. This work provides a new approach for the development of high-performance phototransistors, which opens a new pathway for organic phototransistors in practical application.
Collapse
Affiliation(s)
- Qizhen Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Dengxiao Lai
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Lihua He
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Enlong Li
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Yaqian Liu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Huaan Zeng
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Tailiang Guo
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| |
Collapse
|
40
|
Progress and Perspectives on Aurivillius-Type Layered Ferroelectric Oxides in Binary Bi4Ti3O12-BiFeO3 System for Multifunctional Applications. CRYSTALS 2020. [DOI: 10.3390/cryst11010023] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/30/2023]
Abstract
Driven by potentially photo-electro-magnetic functionality, Bi-containing Aurivillius-type oxides of binary Bi4Ti3O12-BiFeO3 system with a general formula of Bin+1Fen−3Ti3O3n+3, typically in a naturally layered perovskite-related structure, have attracted increasing research interest, especially in the last twenty years. Benefiting from highly structural tolerance and simultaneous electric dipole and magnetic ordering at room temperature, these Aurivillius-phase oxides as potentially single-phase and room-temperature multiferroic materials can accommodate many different cations and exhibit a rich spectrum of properties. In this review, firstly, we discussed the characteristics of Aurivillius-phase layered structure and recent progress in the field of synthesis of such materials with various architectures. Secondly, we summarized recent strategies to improve ferroelectric and magnetic properties, consisting of chemical modification, interface engineering, oxyhalide derivatives and morphology controlling. Thirdly, we highlighted some research hotspots on magnetoelectric effect, catalytic activity, microwave absorption, and photovoltaic effect for promising applications. Finally, we provided an updated overview on the understanding and also highlighting of the existing issues that hinder further development of the multifunctional Bin+1Fen−3Ti3O3n+3 materials.
Collapse
|
41
|
Li T, He F, Liu B, Jia T, Shao B, Zhao R, Zhu H, Yang D, Gai S, Yang P. In Situ Synthesis of FeOCl in Hollow Dendritic Mesoporous Organosilicon for Ascorbic Acid-Enhanced and MR Imaging-Guided Chemodynamic Therapy in Neutral pH Conditions. ACS APPLIED MATERIALS & INTERFACES 2020; 12:56886-56897. [PMID: 33290033 DOI: 10.1021/acsami.0c19330] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Chemodynamic therapy (CDT) based on the Fenton reaction is a promising strategy for nonlight cancer treatment. However, the traditional Fenton reaction is only efficient in strongly acidic conditions (pH = 2-4), resulting in the limited curative effect in a weakly acidic tumor microenvironment (TME). Herein, we first developed a simple in situ growth method to confine FeOCl nanosheets into hollow dendritic mesoporous organosilicon (H-DMOS) nanoparticles to obtain FeOCl@H-DMOS nanospheres. Ascorbic acid (AA) was then absorbed on the nanosystem as a H2O2 prodrug and, meanwhile, was used for the regeneration of Fentons reagent for Fe2+. Finally, poly(ethylene glycol) (PEG) was coated on FeOCl@H-DMOS-AA to enhance the permeability and retention (EPR) effect in tumor tissue. The as-fabricated FeOCl@H-DMOS-AA/PEG can generate a large amount of highly toxic hydroxyl radicals (•OH) by catalyzing H2O2 even in neutral pH conditions with the help of AA. As a result, the effect of CDT has been markedly enhanced by the increased amount of H2O2 and the efficient Fenton reaction in mild acidic TME, which can remove almost all of the tumors in mice. In addition, FeOCl also endows the nanosystem with T2-weighted MR imaging capability (r2 = 34.08 mM-1 s-1), thus realizing the imaging-guided cancer therapy. All in all, our study may contribute a new direction and may have a bright future for enhanced CDT with a neutral pH range.
Collapse
Affiliation(s)
- Tianyao Li
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin 150001, P. R. China
| | - Fei He
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin 150001, P. R. China
| | - Bin Liu
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin 150001, P. R. China
| | - Tao Jia
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin 150001, P. R. China
| | - Boyang Shao
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin 150001, P. R. China
| | - Ruoxi Zhao
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin 150001, P. R. China
| | | | - Dan Yang
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin 150001, P. R. China
| | - Shili Gai
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin 150001, P. R. China
| | - Piaoping Yang
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin 150001, P. R. China
- College of Sciences, Heihe University, Heihe, Heilongjiang 164300, PR China
| |
Collapse
|
42
|
Pan E, Bai G, Cai M, Hua Y, Chen L, Xu S. Reversible modification of ultra-broadband luminescence in transparent photonic materials through field-induced nanoscale structural transformation. NANOSCALE 2020; 12:22002-22008. [PMID: 33125014 DOI: 10.1039/d0nr06220k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The development of integrated multifunctional materials with transparent characteristics meets the requirements of optoelectronics and communication. The coupling of stimuli-responsive materials has become a frequently considered strategy. Experimentalists not only search for photonic materials with excellent physical and chemical properties, but also pursue precise and reversible spectral modification. In this study, the luminescent center Ni2+ is artificially introduced into the transparent LiNbO3 nanoferroelectric photonic materials. The Ni2+ ion-based transparent photonic materials exhibit novel complete ultra-broadband emission in the whole near-infrared region. Until now, the ultra-broadband emission was realized by codoping of several active doping ions. In addition, the emission intensity and wavelength of the luminescent center are modified accurately and reversibly by field-induced nanoscale structural transformation. The Ni2+ ion-based transparent nanoferroelectric photonic materials provide an easy way to develop tunable lasers and ultra-broadband optical amplifiers.
Collapse
Affiliation(s)
- Er Pan
- Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, People's Republic of China.
| | | | | | | | | | | |
Collapse
|
43
|
Piezoelectric Energy Harvesting from a Ferroelectric Hybrid Salt [Ph
3
MeP]
4
[Ni(NCS)
6
] Embedded in a Polymer Matrix. Angew Chem Int Ed Engl 2020. [DOI: 10.1002/ange.202001250] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
|
44
|
Ma C, Wang X, Tan W, Zhou W, Wang X, Cheng Z, Chen G, Zhai Z. Enhanced photoluminescence and ferro/piezoelectric performance in piezo-luminescent materials with outstanding water resistance and thermal stability. Dalton Trans 2020; 49:5581-5589. [PMID: 32271339 DOI: 10.1039/d0dt00577k] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
Abstract
Sm3+-Modified (1 -x)Na0.5Bi0.5TiO3-xCaTiO3 (NBT-xCT:Sm3+) piezo-luminescent ceramic materials were synthesized to investigate the influence of CaTiO3 (CT) concentration on their photoluminescence and electrical performance. Under 480 nm irradiation, the NBT-xCT:Sm3+ samples exhibit prominent orange-red emission, with a prime emission peak centered at 597 nm. A moderate amount of CT doping in the Sm3+-modified NBT ceramics boosts both their photoluminescence and piezoelectric properties significantly, with NBT-0.04CT:Sm3+ showing the optimal performance. Furthermore, outstanding luminescence thermal stability over a temperature range of 293-473 K and superior water resistance behavior are achieved in the NBT-0.04CT:Sm3+ ceramic. These results indicate that NBT-xCT:Sm3+ piezo-luminescent ceramics show great potential applications in white LEDs, as well as novel optical-electronic multifunctional devices.
Collapse
Affiliation(s)
- Chunlin Ma
- School of Physics and Electronic Electrical Engineering, Huaiyin Normal University, Huaian 223001, P. R. China
| | | | | | | | | | | | | | | |
Collapse
|
45
|
Vijayakanth T, Ram F, Praveenkumar B, Shanmuganathan K, Boomishankar R. Piezoelectric Energy Harvesting from a Ferroelectric Hybrid Salt [Ph
3
MeP]
4
[Ni(NCS)
6
] Embedded in a Polymer Matrix. Angew Chem Int Ed Engl 2020; 59:10368-10373. [DOI: 10.1002/anie.202001250] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/23/2020] [Revised: 03/09/2020] [Indexed: 12/16/2022]
Affiliation(s)
- Thangavel Vijayakanth
- Department of Chemistry and Centre for Energy Science Indian Institute of Science Education and Research, Pune Dr. Homi Bhabha Road Pune 411008 India
| | - Farsa Ram
- Polymer Science and Engineering Division and Academy of Scientific and Innovative Research CSIR-National Chemical Laboratory Dr. Homi Bhabha Road Pune 411008 India
| | - Balu Praveenkumar
- PZT Centre Armament Research and Development Establishment Dr. Homi Bhabha Road Pune 411021 India
| | - Kadhiravan Shanmuganathan
- Polymer Science and Engineering Division and Academy of Scientific and Innovative Research CSIR-National Chemical Laboratory Dr. Homi Bhabha Road Pune 411008 India
| | - Ramamoorthy Boomishankar
- Department of Chemistry and Centre for Energy Science Indian Institute of Science Education and Research, Pune Dr. Homi Bhabha Road Pune 411008 India
| |
Collapse
|
46
|
Liu Y, Wang Q. Ferroelectric Polymers Exhibiting Negative Longitudinal Piezoelectric Coefficient: Progress and Prospects. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:1902468. [PMID: 32195083 PMCID: PMC7080546 DOI: 10.1002/advs.201902468] [Citation(s) in RCA: 28] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2019] [Revised: 12/08/2019] [Indexed: 05/11/2023]
Abstract
Piezoelectric polymers are well-recognized to hold great promise for a wide range of flexible, wearable, and biocompatible applications. Among the known piezoelectric polymers, ferroelectric polymers represented by poly(vinylidene fluoride) and its copolymer poly(vinylidene fluoride-co-trifluoroethylene) possess the best piezoelectric coefficients. However, the physical origin of negative longitudinal piezoelectric coefficients occurring in the polymers remains elusive. To address this long-standing challenge, several theoretical models proposed over the past decades, which are controversial in nature, have been revisited and reviewed. It is concluded that negative longitudinal piezoelectric coefficients arise from the negative longitudinal electrostriction in the crystalline domain of the polymers, independent of amorphous and crystalline-amorphous interfacial regions. The crystalline origin of piezoelectricity offers unprecedented opportunities to improve electromechanical properties of polymers via structural engineering, i.e., design of morphotropic phase boundaries in ferroelectric polymers.
Collapse
Affiliation(s)
- Yang Liu
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Qing Wang
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
| |
Collapse
|
47
|
Ghasemian MB, Daeneke T, Shahrbabaki Z, Yang J, Kalantar-Zadeh K. Peculiar piezoelectricity of atomically thin planar structures. NANOSCALE 2020; 12:2875-2901. [PMID: 31984979 DOI: 10.1039/c9nr08063e] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The emergence of piezoelectricity in two-dimensional (2D) materials has represented a milestone towards employing low-dimensional structures for future technologies. 2D piezoelectric materials possess unique and unprecedented characteristics that cannot be found in other morphologies; therefore, the applications of piezoelectricity can be substantially extended. By reducing the thickness into the 2D realm, piezoelectricity might be induced in otherwise non-piezoelectric materials. The origin of the enhanced piezoelectricity in such thin planes is attributed to the loss of centrosymmetry, altered carrier concentration, and change in local polarization and can be efficiently tailored via surface modifications. Access to such materials is important from a fundamental research point of view, to observe the extraordinary interactions between free charge carriers, phonons and photons, and also with respect to device development, for which planar structures provide the required compatibility with the large-scale fabrication technologies of integrated circuits. The existence of piezoelectricity in 2D materials presents great opportunities for applications in various fields of electronics, optoelectronics, energy harvesting, sensors, actuators and biotechnology. Additionally, 2D flexible nanostructures with superior piezoelectric properties are distinctive candidates for integration into nano-scale electromechanical systems. Here we fundamentally review the state of the art of 2D piezoelectric materials from both experimental and theoretical aspects and report the recent achievements in the synthesis, characterization and applications of these materials.
Collapse
Affiliation(s)
- Mohammad B Ghasemian
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney Campus, NSW 2052, Australia.
| | | | | | | | | |
Collapse
|
48
|
Zeng Z, Xu Y, Zhang Z, Gao Z, Luo M, Yin Z, Zhang C, Xu J, Huang B, Luo F, Du Y, Yan C. Rare-earth-containing perovskite nanomaterials: design, synthesis, properties and applications. Chem Soc Rev 2020; 49:1109-1143. [PMID: 31939973 DOI: 10.1039/c9cs00330d] [Citation(s) in RCA: 83] [Impact Index Per Article: 20.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
As star material, perovskites have been widely used in the fields of optics, photovoltaics, electronics, magnetics, catalysis, sensing, etc. However, some inherent shortcomings, such as low efficiency (power conversion efficiency, external quantum efficiency, etc.) and poor stability (against water, oxygen, ultraviolet light, etc.), limit their practical applications. Downsizing the materials into nanostructures and incorporating rare earth (RE) ions are effective means to improve their properties and broaden their applications. This review will systematically summarize the key points in the design, synthesis, property improvements and application expansion of RE-containing (including both RE-based and RE-doped) halide and oxide perovskite nanomaterials (PNMs). The critical factors of incorporating RE elements into different perovskite structures and the rational design of functional materials will be discussed in detail. The advantages and disadvantages of different synthesis methods for PNMs will be reviewed. This paper will also summarize some practical experiences in selecting suitable RE elements and designing multi-functional materials according to the mechanisms and principles of REs promoting the properties of perovskites. At the end of this review, we will provide an outlook on the opportunities and challenges of RE-containing PNMs in various fields.
Collapse
Affiliation(s)
- Zhichao Zeng
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering & National Institute for Advanced Materials, Nankai University, Tianjin 300350, China.
| | - Yueshan Xu
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering & National Institute for Advanced Materials, Nankai University, Tianjin 300350, China.
| | - Zheshan Zhang
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering & National Institute for Advanced Materials, Nankai University, Tianjin 300350, China.
| | - Zhansheng Gao
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering & National Institute for Advanced Materials, Nankai University, Tianjin 300350, China.
| | - Meng Luo
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering & National Institute for Advanced Materials, Nankai University, Tianjin 300350, China.
| | - Zongyou Yin
- Research School of Chemistry, The Australian National University, Canberra, ACT 2601, Australia
| | - Chao Zhang
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering & National Institute for Advanced Materials, Nankai University, Tianjin 300350, China.
| | - Jun Xu
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering & National Institute for Advanced Materials, Nankai University, Tianjin 300350, China.
| | - Bolong Huang
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, China.
| | - Feng Luo
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering & National Institute for Advanced Materials, Nankai University, Tianjin 300350, China.
| | - Yaping Du
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering & National Institute for Advanced Materials, Nankai University, Tianjin 300350, China.
| | - Chunhua Yan
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering & National Institute for Advanced Materials, Nankai University, Tianjin 300350, China. and Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry, College of Chemistry and Molecular Engineering, Peking University, Beijing, China and College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou 730000, China
| |
Collapse
|
49
|
Xu J, Li X, Xiong J, Yuan C, Semin S, Rasing T, Bu XH. Halide Perovskites for Nonlinear Optics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1806736. [PMID: 30883987 DOI: 10.1002/adma.201806736] [Citation(s) in RCA: 92] [Impact Index Per Article: 23.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2018] [Revised: 01/20/2019] [Indexed: 05/04/2023]
Abstract
Halide perovskites provide an ideal platform for engineering highly promising semiconductor materials for a wide range of applications in optoelectronic devices, such as photovoltaics, light-emitting diodes, photodetectors, and lasers. More recently, increasing research efforts have been directed toward the nonlinear optical properties of halide perovskites because of their unique chemical and electronic properties, which are of crucial importance for advancing their applications in next-generation photonic devices. Here, the current state of the art in the field of nonlinear optics (NLO) in halide perovskite materials is reviewed. Halide perovskites are categorized into hybrid organic/inorganic and pure inorganic ones, and their second-, third-, and higher-order NLO properties are summarized. The performance of halide perovskite materials in NLO devices such as upconversion lasers and ultrafast laser modulators is analyzed. Several potential perspectives and research directions of these promising materials for nonlinear optics are presented.
Collapse
Affiliation(s)
- Jialiang Xu
- School of Materials Science and Engineering, National Institute for Advanced Materials, Tianjin Key Lab for Rare Earth Materials and Applications, Nankai University, Tongyan Road 38, Tianjin, 300350, P. R. China
| | - Xinyue Li
- School of Materials Science and Engineering, National Institute for Advanced Materials, Tianjin Key Lab for Rare Earth Materials and Applications, Nankai University, Tongyan Road 38, Tianjin, 300350, P. R. China
- Institute for Molecules and Materials (IMM), Radboud University, Heyendaalseweg 135, 6525AJ, Nijmegen, The Netherlands
| | - Jianbo Xiong
- School of Materials Science and Engineering, National Institute for Advanced Materials, Tianjin Key Lab for Rare Earth Materials and Applications, Nankai University, Tongyan Road 38, Tianjin, 300350, P. R. China
| | - Chunqing Yuan
- School of Materials Science and Engineering, National Institute for Advanced Materials, Tianjin Key Lab for Rare Earth Materials and Applications, Nankai University, Tongyan Road 38, Tianjin, 300350, P. R. China
| | - Sergey Semin
- Institute for Molecules and Materials (IMM), Radboud University, Heyendaalseweg 135, 6525AJ, Nijmegen, The Netherlands
| | - Theo Rasing
- Institute for Molecules and Materials (IMM), Radboud University, Heyendaalseweg 135, 6525AJ, Nijmegen, The Netherlands
| | - Xian-He Bu
- School of Materials Science and Engineering, National Institute for Advanced Materials, Tianjin Key Lab for Rare Earth Materials and Applications, Nankai University, Tongyan Road 38, Tianjin, 300350, P. R. China
| |
Collapse
|
50
|
Wang Y, Gao J, Gao C, Ma H, Yang B, Han Y, Zhou E, Cheng Q, Jing S, Huang L. Modulation of lanthanide luminescence via an electric field. NANOSCALE 2019; 11:16562-16570. [PMID: 31460546 DOI: 10.1039/c9nr04684d] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The modulation of luminescence via external stimuli such as temperature, mechanical stress, hydrostatic pressure, as well as electric and/or magnetic fields, has witnessed great progress, enabled the disclosure of new principles and energy transfer pathways, and widened applications. However, investigations on the luminescence modulation of lanthanide ions doped in semiconductors via an applied electric field are still absent. Herein, for the first time, we have demonstrated the in situ, real-time, and reversible modulation of the luminescence of Eu3+ doped in SnO2 nanocrystals by manipulating the recombination rate of photo-generated electrons and holes, and the accompanied energy transfer mode in terms of linear and quasi-sinusoidal, from semiconductor to lanthanide ions. Following the same principle, the modulation of near infrared responsive Er3+ in SnO2 and the visible luminescence of perovskite nanocrystals is further realized. This study offers extra methodologies for luminescence modulation, in addition to those already reported for ferro- and/or piezoelectric-hosted luminescent materials.
Collapse
Affiliation(s)
- Yangbo Wang
- Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China. and School of Materials Science and Engineering, Liaocheng University, 1 Hunan Road, Liaocheng 252059, China
| | - Jiaxin Gao
- Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China.
| | - Chao Gao
- Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China.
| | - Hui Ma
- Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China.
| | - Bingxiao Yang
- Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China.
| | - Yingdong Han
- Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China. and School of Precision Instrument and Opto-Electronics Engineering, Tianjin University, 92 Weijin Road, Tianjin 300072, China
| | - Enlong Zhou
- Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China.
| | - Qianya Cheng
- School of Chemistry and Molecular Engineering, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China.
| | - Su Jing
- School of Chemistry and Molecular Engineering, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China.
| | - Ling Huang
- Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China.
| |
Collapse
|