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Dang C, Wang Z, Hughes-Riley T, Dias T, Qian S, Wang Z, Wang X, Liu M, Yu S, Liu R, Xu D, Wei L, Yan W, Zhu M. Fibres-threads of intelligence-enable a new generation of wearable systems. Chem Soc Rev 2024; 53:8790-8846. [PMID: 39087714 DOI: 10.1039/d4cs00286e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/02/2024]
Abstract
Fabrics represent a unique platform for seamlessly integrating electronics into everyday experiences. The advancements in functionalizing fabrics at both the single fibre level and within constructed fabrics have fundamentally altered their utility. The revolution in materials, structures, and functionality at the fibre level enables intimate and imperceptible integration, rapidly transforming fibres and fabrics into next-generation wearable devices and systems. In this review, we explore recent scientific and technological breakthroughs in smart fibre-enabled fabrics. We examine common challenges and bottlenecks in fibre materials, physics, chemistry, fabrication strategies, and applications that shape the future of wearable electronics. We propose a closed-loop smart fibre-enabled fabric ecosystem encompassing proactive sensing, interactive communication, data storage and processing, real-time feedback, and energy storage and harvesting, intended to tackle significant challenges in wearable technology. Finally, we envision computing fabrics as sophisticated wearable platforms with system-level attributes for data management, machine learning, artificial intelligence, and closed-loop intelligent networks.
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Affiliation(s)
- Chao Dang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China.
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore.
| | - Zhixun Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore.
| | - Theodore Hughes-Riley
- Nottingham School of Art and Design, Nottingham Trent University, Dryden Street, Nottingham, NG1 4GG, UK.
| | - Tilak Dias
- Nottingham School of Art and Design, Nottingham Trent University, Dryden Street, Nottingham, NG1 4GG, UK.
| | - Shengtai Qian
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore.
| | - Zhe Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore.
| | - Xingbei Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore.
| | - Mingyang Liu
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore.
| | - Senlong Yu
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China.
| | - Rongkun Liu
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China.
| | - Dewen Xu
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China.
| | - Lei Wei
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore.
| | - Wei Yan
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China.
| | - Meifang Zhu
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China.
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Mondal SK, Prakasan L, Kolluru N, Pradhan JR, Dasgupta S. Inkjet-Printed, High-Performance MoS 2 Transistors and Unipolar Logic Electronics. ACS APPLIED MATERIALS & INTERFACES 2024; 16:42392-42405. [PMID: 39080865 DOI: 10.1021/acsami.4c05529] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/16/2024]
Abstract
Two-dimensional (2D) semiconductor field-effect film transistors combine large carrier mobility with mechanical flexibility and therefore can be ideally suitable for wearable electronics or at the sensor interfaces of smart sensor systems. However, such applications require large-area solution processing as opposed to single-flake devices, where the critical challenge to overcome is the high interflake resistance values. In this report, using a narrow-channel, near-vertical transport device architecture, we have fabricated inkjet-printed sub-20 nm channel electrolyte-gated transistors with predominantly intraflake carrier transport. Therefore, the electronics transport in these transistors is not dominated by the high interflake resistance, and the intraflake material properties including doping density, defect concentration, contact resistance, and threshold voltage modulation can be examined and optimized independently to achieve a current density as high as 280 μA·μm-1. In addition, through the passivation of the sulfur vacancies with a tailored surface treatment, we demonstrate an impressive On-Off current ratio exceeding 1 × 107, complemented by a low subthreshold swing of 100 mV·decade-1. Next, exploiting these high-performance transistors, unipolar depletion-load-type inverters have been fabricated that show a maximum gain of 31. Furthermore, we have realized NAND, NOR, and OR gates, demonstrating their seamless operation at a frequency of 1 kHz. Therefore, this work represents an important step forward to realize electronic circuits based on printed 2D thin film transistors.
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Affiliation(s)
- Sandeep Kumar Mondal
- Department of Materials Engineering, Indian Institute of Science (IISc), CV Raman Avenue, Bangalore 560012, India
| | - Lakshmi Prakasan
- Department of Materials Engineering, Indian Institute of Science (IISc), CV Raman Avenue, Bangalore 560012, India
| | - Naveen Kolluru
- Department of Materials Engineering, Indian Institute of Science (IISc), CV Raman Avenue, Bangalore 560012, India
| | - Jyoti Ranjan Pradhan
- Department of Materials Engineering, Indian Institute of Science (IISc), CV Raman Avenue, Bangalore 560012, India
| | - Subho Dasgupta
- Department of Materials Engineering, Indian Institute of Science (IISc), CV Raman Avenue, Bangalore 560012, India
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3
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Pradhan JR, Dasgupta S. Fully Printed Negative-Capacitance Field-Effect Transistors with Ultralow Subthreshold Swing and High Inverter Signal Gain. ACS APPLIED MATERIALS & INTERFACES 2024; 16:39517-39527. [PMID: 39012262 DOI: 10.1021/acsami.4c00548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/17/2024]
Abstract
The switching of conventional field-effect transistors (FETs) is limited by the Boltzmann barrier of thermionic emission, which prevents the realization of low-power electronics. In order to overcome this limitation, among others, unconventional device geometry with a ferroelectric/dielectric insulator stack has been proposed to demonstrate stable negative-capacitance behavior. Here, the switching of the ferroelectric layer behaves like a step-up amplifier and results in a body factor less than 1. This implies a larger change in the semiconductor surface potential compared to the applied gate voltage variation. The transistors with such ferroelectric/dielectric stack are known as negative-capacitance field-effect transistors (nc-FETs), and can demonstrate a subthreshold slope lower than the Boltzmann's limit (60 mV/decade). While nc-FETs have typically been realized with high-vacuum-deposition processes, here we show fully printed nc-FETs with amorphous indium-gallium-zinc oxide (a-IGZO) as the semiconductor material, Al2O3 as the dielectric, and poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) as the polymer ferroelectric. The printed nc-FETs demonstrate an extremely low subthreshold slope of ∼2.3 mV/decade at room temperature, which remains below the Boltzmann's limit for over 5 orders of magnitude of drain currents. Furthermore, the unipolar depletion-load-type inverters fabricated using n-type nc-FETs have demonstrated an extraordinary signal gain of 2691.
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Affiliation(s)
- Jyoti Ranjan Pradhan
- Department of Materials Engineering, Indian Institute of Science (IISc), C V Raman Avenue, Bangalore 560012, Karnataka, India
| | - Subho Dasgupta
- Department of Materials Engineering, Indian Institute of Science (IISc), C V Raman Avenue, Bangalore 560012, Karnataka, India
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4
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Zhang J, Wang G, Chai Z, Li Z, Yuan S, Wang Y, Ding Y, Sun T, Wang T, Zhao D, Busnaina AA, Ren TL, Lu X. All-Solution-Processed Electronics with Sub-Microscale Resolution and Nanoscale Fidelity Fabricated Via a Humidity-Controlled, Surface Energy-Directed Assembly Process. ACS NANO 2024. [PMID: 39001855 DOI: 10.1021/acsnano.4c04936] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/15/2024]
Abstract
Solution-based processes have received considerable attention in the fabrication of electronics and sensors owing to their merits of being low-cost, vacuum-free, and simple in equipment. However, the current solution-based processes either lack patterning capability or have low resolution (tens of micrometers) and low pattern fidelity in terms of line edge roughness (LER, several micrometers). Here, we present a surface energy-directed assembly (SEDA) process to fabricate metal oxide patterns with up to 2 orders of magnitude improvement in resolution (800 nm) and LER (16 nm). Experiment results show that high pattern fidelity can be achieved only at low relative humidities of below 30%. The reason for this phenomenon lies in negligible water condensation on the solution droplet. Employing the SEDA process, all-solution-processed metal oxide thin film transistors (TFTs) are fabricated by using indium oxide as channel layers, indium tin oxide as source/drain electrodes and gate electrodes, and aluminum oxide as gate dielectrics. TFT-based logic gate circuits, including NOT, NOR, NAND, and AND are fabricated as well, demonstrating the applicability of the SEDA process in fabricating large area functional electronics.
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Affiliation(s)
- Jingwei Zhang
- Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Guangji Wang
- Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Zhimin Chai
- Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Zetong Li
- Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Siqing Yuan
- Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Yihuan Wang
- Weiyang College, Tsinghua University, Beijing 100084, China
| | - Yi Ding
- Weiyang College, Tsinghua University, Beijing 100084, China
| | - Taohan Sun
- Weiyang College, Tsinghua University, Beijing 100084, China
| | - Tongqing Wang
- Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Dewen Zhao
- Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Ahmed A Busnaina
- NSF Nanoscale Science and Engineering Center for High-Rate Nanomanufacturing (CHN), Northeastern University, Boston, Massachusetts 02115, United States
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research on Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Xinchun Lu
- Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
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5
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McNaughter PD, Moore J, Yeates SG, Lewis DJ. Semiconductor Deposition via Laser Printing of a Bespoke Toner Containing Metal Xanthate Complexes. ACS APPLIED ENGINEERING MATERIALS 2024; 2:1225-1233. [PMID: 38808267 PMCID: PMC11129185 DOI: 10.1021/acsaenm.3c00709] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/21/2023] [Revised: 03/28/2024] [Accepted: 03/29/2024] [Indexed: 05/30/2024]
Abstract
A methodology to use laser printing, a form of electrophotography, to print metal chalcogenide complexes on paper, is described. After fusing the toner to paper, a heating step is used to cause the printed metal xanthate complexes to thermolyze within the toner and form three target metal chalcogenides: CuS, SnS, and ZnS. To achieve this, we synthesize a poly(styrene-co-n-butyl acrylate) thermopolymer that emulates the thermal properties of a commercial toner and is also solution processable with the metal xanthate complexes used: [Zn(S2COEt)2], [Cu(S2COEt)·(PPh3)2], and [Sn(S2COEt)2]. We demonstrate through energy dispersive X-ray mapping that the toner is deposited following printing and that thermolysis of the metal xanthate complexes occurs in the fused toner, demonstrating the first example of laser printing of inorganic complexes and, in turn, semiconductors.
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Affiliation(s)
- Paul D. McNaughter
- Department
of Chemistry, The University of Manchester, Oxford Road, Manchester M13 9PL, United
Kingdom
| | - Joshua Moore
- Department
of Chemistry, The University of Manchester, Oxford Road, Manchester M13 9PL, United
Kingdom
| | - Stephen G. Yeates
- Department
of Chemistry, The University of Manchester, Oxford Road, Manchester M13 9PL, United
Kingdom
| | - David J. Lewis
- Department
of Materials, The University of Manchester, Oxford Road, Manchester M13 9PL, United
Kingdom
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6
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Azzaroni O, Piccinini E, Fenoy G, Marmisollé W, Ariga K. Field-effect transistors engineered via solution-based layer-by-layer nanoarchitectonics. NANOTECHNOLOGY 2023; 34:472001. [PMID: 37567153 DOI: 10.1088/1361-6528/acef26] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/07/2023] [Accepted: 08/10/2023] [Indexed: 08/13/2023]
Abstract
The layer-by-layer (LbL) technique has been proven to be one of the most versatile approaches in order to fabricate functional nanofilms. The use of simple and inexpensive procedures as well as the possibility to incorporate a very wide range of materials through different interactions have driven its application in a wide range of fields. On the other hand, field-effect transistors (FETs) are certainly among the most important elements in electronics. The ability to modulate the flowing current between a source and a drain electrode via the voltage applied to the gate electrode endow these devices to switch or amplify electronic signals, being vital in all of our everyday electronic devices. In this topical review, we highlight different research efforts to engineer field-effect transistors using the LbL assembly approach. We firstly discuss on the engineering of the channel material of transistors via the LbL technique. Next, the deposition of dielectric materials through this approach is reviewed, allowing the development of high-performance electronic components. Finally, the application of the LbL approach to fabricate FETs-based biosensing devices is also discussed, as well as the improvement of the transistor's interfacial sensitivity by the engineering of the semiconductor with polyelectrolyte multilayers.
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Affiliation(s)
- Omar Azzaroni
- Instituto de Investigaciones Fisicoquímica Teóricas y Aplicadas (INIFTA)-Universidad Nacional de La Plata-CONICET-Diagonal 113 y 64 (1900), Argentina
| | - Esteban Piccinini
- Instituto de Investigaciones Fisicoquímica Teóricas y Aplicadas (INIFTA)-Universidad Nacional de La Plata-CONICET-Diagonal 113 y 64 (1900), Argentina
| | - Gonzalo Fenoy
- Instituto de Investigaciones Fisicoquímica Teóricas y Aplicadas (INIFTA)-Universidad Nacional de La Plata-CONICET-Diagonal 113 y 64 (1900), Argentina
| | - Waldemar Marmisollé
- Instituto de Investigaciones Fisicoquímica Teóricas y Aplicadas (INIFTA)-Universidad Nacional de La Plata-CONICET-Diagonal 113 y 64 (1900), Argentina
| | - Katsuhiko Ariga
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan
- Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa 277-0825, Japan
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7
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Talin AA, Li Y, Robinson DA, Fuller EJ, Kumar S. ECRAM Materials, Devices, Circuits and Architectures: A Perspective. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204771. [PMID: 36354177 DOI: 10.1002/adma.202204771] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/26/2022] [Revised: 07/09/2022] [Indexed: 06/16/2023]
Abstract
Non-von-Neumann computing using neuromorphic systems based on two-terminal resistive nonvolatile memory elements has emerged as a promising approach, but its full potential has not been realized due to the lack of materials and devices with the appropriate attributes. Unlike memristors, which require large write currents to drive phase transformations or filament growth, electrochemical random access memory (ECRAM) decouples the "write" and "read" operations using a "gate" electrode to tune the conductance state through charge-transfer reactions, and every electron transferred through the external circuit in ECRAM corresponds to the migration of ≈1 ion used to store analogue information. Like static dopants in traditional semiconductors, electrochemically inserted ions modulate the conductivity by locally perturbing a host's electronic structure; however, ECRAM does so in a dynamic and reversible manner. The resulting change in conductance can span orders of magnitude, from gradual increments needed for analog elements, to large, abrupt changes for dynamically reconfigurable adaptive architectures. In this in-depth perspective, the history of ECRAM, the recent progress in devices spanning organic, inorganic, and 2D materials, circuits, architectures, the rich portfolio of challenging, fundamental questions, and how ECRAM can be harnessed to realize a new paradigm for low-power neuromorphic computing are discussed.
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Affiliation(s)
- A Alec Talin
- Sandia National Laboratories, Livermore, CA, 94551, USA
| | - Yiyang Li
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, 48109, USA
| | | | | | - Suhas Kumar
- Sandia National Laboratories, Livermore, CA, 94551, USA
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8
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Lee JY, Shin J, Kim K, Ju JE, Dutta A, Kim TS, Cho YU, Kim T, Hu L, Min WK, Jung HS, Park YS, Won SM, Yeo WH, Moon J, Khang DY, Kim HJ, Ahn JH, Cheng H, Yu KJ, Rogers JA. Ultrathin Crystalline Silicon Nano and Micro Membranes with High Areal Density for Low-Cost Flexible Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302597. [PMID: 37246255 DOI: 10.1002/smll.202302597] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Revised: 05/14/2023] [Indexed: 05/30/2023]
Abstract
Ultrathin crystalline silicon is widely used as an active material for high-performance, flexible, and stretchable electronics, from simple passive and active components to complex integrated circuits, due to its excellent electrical and mechanical properties. However, in contrast to conventional silicon wafer-based devices, ultrathin crystalline silicon-based electronics require an expensive and rather complicated fabrication process. Although silicon-on-insulator (SOI) wafers are commonly used to obtain a single layer of crystalline silicon, they are costly and difficult to process. Therefore, as an alternative to SOI wafers-based thin layers, here, a simple transfer method is proposed for printing ultrathin multiple crystalline silicon sheets with thicknesses between 300 nm to 13 µm and high areal density (>90%) from a single mother wafer. Theoretically, the silicon nano/micro membrane can be generated until the mother wafer is completely consumed. In addition, the electronic applications of silicon membranes are successfully demonstrated through the fabrication of a flexible solar cell and flexible NMOS transistor arrays.
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Affiliation(s)
- Ju Young Lee
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
| | - Jongwoon Shin
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
| | - Kyubeen Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
| | - Jeong Eun Ju
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
| | - Ankan Dutta
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Tae Soo Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seongbuk-gu, Seoul, 02792, South Korea
| | - Young Uk Cho
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
| | - Taemin Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
| | - Luhing Hu
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
| | - Won Kyung Min
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
| | - Hyun-Suh Jung
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722, Republic of Korea
| | - Young Sun Park
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722, Republic of Korea
| | - Sang Min Won
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Seongbuk-gu, Suwon, 16419, Republic of Korea
| | - Woon-Hong Yeo
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
- IEN Center for Human-Centric Interfaces and Engineering at the Institute for Electronics and Nanotechnology, Georgia Institute of Technology, Atlanta, GA, 30332, USA
- Wallace H. Coulter Department of Biomedical Engineering, Parker H. Petit Institute for Bioengineering and Biosciences, Georgia Institute of Technology, Atlanta, GA, 30332, USA
- Institute for Materials, Neural Engineering Center, Institute for Robotics and Intelligent Machines, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Jooho Moon
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722, Republic of Korea
| | - Dahl-Young Khang
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722, Republic of Korea
| | - Hyun Jae Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
| | - Huanyu Cheng
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
- Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Ki Jun Yu
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
- YU-Korea Institute of Science and Technology (KIST) Institute, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - John A Rogers
- Querrey Simpson Institute for Bioelectronics, Northwestern University, Evanston, IL, 60208, USA
- Department of Biomedical Engineering, Northwestern University, Evanston, IL, 60208, USA
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
- Department of Neurological Surgery, Northwestern University Feinberg School of Medicine, Chicago, IL, 60611, USA
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9
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Kassem O, Pimpolari L, Dun C, Polyushkin DK, Zarattini M, Dimaggio E, Chen L, Basso G, Parenti F, Urban JJ, Mueller T, Fiori G, Casiraghi C. Water-based 2-dimensional anatase TiO 2 inks for printed diodes and transistors. NANOSCALE 2023; 15:5689-5695. [PMID: 36880645 PMCID: PMC10035403 DOI: 10.1039/d2nr05786g] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/18/2022] [Accepted: 02/03/2023] [Indexed: 06/18/2023]
Abstract
2-Dimensional (2D) materials are attracting strong interest in printed electronics because of their unique properties and easy processability, enabling the fabrication of devices with low cost and mass scalable methods such as inkjet printing. For the fabrication of fully printed devices, it is of fundamental importance to develop a printable dielectric ink, providing good insulation and the ability to withstand large electric fields. Hexagonal boron nitride (h-BN) is typically used as a dielectric in printed devices. However, the h-BN film thickness is usually above 1 μm, hence limiting the use of h-BN in low-voltage applications. Furthermore, the h-BN ink is composed of nanosheets with broad lateral size and thickness distributions, due to the use of liquid-phase exfoliation (LPE). In this work, we investigate anatase TiO2 nanosheets (TiO2-NS), produced by a mass scalable bottom-up approach. We formulate the TiO2-NS into a water-based and printable solvent and demonstrate the use of the material with sub-micron thickness in printed diodes and transistors, hence validating the strong potential of TiO2-NS as a dielectric for printed electronics.
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Affiliation(s)
- Omar Kassem
- Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL UK.
| | - Lorenzo Pimpolari
- Dipartimento di Ingegneria dell'Informazione, Università di Pisa, Pisa 56122, Italy
| | - Chaochao Dun
- The Molecular Foundry, Lawrence Berkeley National Laboratory Berkeley, Berkeley, CA, 94720, USA
| | - Dmitry K Polyushkin
- Institute of Photonics, Vienna University of Technology, Vienna, 1040, Austria
| | - Marco Zarattini
- Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL UK.
| | - Elisabetta Dimaggio
- Dipartimento di Ingegneria dell'Informazione, Università di Pisa, Pisa 56122, Italy
| | - Liming Chen
- Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL UK.
| | - Giovanni Basso
- Dipartimento di Ingegneria dell'Informazione, Università di Pisa, Pisa 56122, Italy
| | - Federico Parenti
- Dipartimento di Ingegneria dell'Informazione, Università di Pisa, Pisa 56122, Italy
| | - Jeffrey J Urban
- The Molecular Foundry, Lawrence Berkeley National Laboratory Berkeley, Berkeley, CA, 94720, USA
| | - Thomas Mueller
- Institute of Photonics, Vienna University of Technology, Vienna, 1040, Austria
| | - Gianluca Fiori
- Dipartimento di Ingegneria dell'Informazione, Università di Pisa, Pisa 56122, Italy
| | - Cinzia Casiraghi
- Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL UK.
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10
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Zhang Y, Zhou J, Zhang Y, Zhang D, Yong KT, Xiong J. Elastic Fibers/Fabrics for Wearables and Bioelectronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203808. [PMID: 36253094 PMCID: PMC9762321 DOI: 10.1002/advs.202203808] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/02/2022] [Revised: 09/01/2022] [Indexed: 06/16/2023]
Abstract
Wearables and bioelectronics rely on breathable interface devices with bioaffinity, biocompatibility, and smart functionality for interactions between beings and things and the surrounding environment. Elastic fibers/fabrics with mechanical adaptivity to various deformations and complex substrates, are promising to act as fillers, carriers, substrates, dressings, and scaffolds in the construction of biointerfaces for the human body, skins, organs, and plants, realizing functions such as energy exchange, sensing, perception, augmented virtuality, health monitoring, disease diagnosis, and intervention therapy. This review summarizes and highlights the latest breakthroughs of elastic fibers/fabrics for wearables and bioelectronics, aiming to offer insights into elasticity mechanisms, production methods, and electrical components integration strategies with fibers/fabrics, presenting a profile of elastic fibers/fabrics for energy management, sensors, e-skins, thermal management, personal protection, wound healing, biosensing, and drug delivery. The trans-disciplinary application of elastic fibers/fabrics from wearables to biomedicine provides important inspiration for technology transplantation and function integration to adapt different application systems. As a discussion platform, here the main challenges and possible solutions in the field are proposed, hopefully can provide guidance for promoting the development of elastic e-textiles in consideration of the trade-off between mechanical/electrical performance, industrial-scale production, diverse environmental adaptivity, and multiscenario on-spot applications.
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Affiliation(s)
- Yufan Zhang
- Innovation Center for Textile Science and TechnologyDonghua UniversityShanghai201620China
| | - Jiahui Zhou
- College of Textile and Clothing EngineeringSoochow UniversitySuzhou215123China
| | - Yue Zhang
- College of Textile and Clothing EngineeringSoochow UniversitySuzhou215123China
| | - Desuo Zhang
- College of Textile and Clothing EngineeringSoochow UniversitySuzhou215123China
| | - Ken Tye Yong
- School of Biomedical EngineeringThe University of SydneySydneyNew South Wales2006Australia
| | - Jiaqing Xiong
- Innovation Center for Textile Science and TechnologyDonghua UniversityShanghai201620China
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Ding Y, Zhu Y, Wang H, Wang Y, Gu X, Wang X, Qiu L. Improving Electrical and Mechanical Properties of Blend Films via Optimizing Solution-Processable Techniques and Controlling the Semiconductor Molecular Weight. Macromolecules 2022. [DOI: 10.1021/acs.macromol.2c00765] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Yafei Ding
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Opto-Electronic Engineering, Hefei University of Technology, Hefei 230009, China
| | - Yingman Zhu
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Opto-Electronic Engineering, Hefei University of Technology, Hefei 230009, China
| | - Heng Wang
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Opto-Electronic Engineering, Hefei University of Technology, Hefei 230009, China
| | - Yunfei Wang
- School of Polymer Science and Engineering, The University of Southern Mississippi, Hattiesburg, Mississippi 39406, United States
| | - Xiaodan Gu
- School of Polymer Science and Engineering, The University of Southern Mississippi, Hattiesburg, Mississippi 39406, United States
| | - Xiaohong Wang
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Opto-Electronic Engineering, Hefei University of Technology, Hefei 230009, China
| | - Longzhen Qiu
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Opto-Electronic Engineering, Hefei University of Technology, Hefei 230009, China
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12
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Choi MJ, Hwang YJ, Pyun SB, Kim JH, Kim JY, Hong W, Park JY, Kwak J, Cho EC. Reaction-Based Scalable Inorganic Patterning on Rigid and Soft Substrates for Photovoltaic Roofs with Minimal Optical Loss and Sustainable Sunlight-Driven-Cleaning Windows. ACS APPLIED MATERIALS & INTERFACES 2022; 14:38339-38350. [PMID: 35968862 DOI: 10.1021/acsami.2c09145] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Recently developed fabrication methods for inorganic patterns (such as laser printing and optical lithography) can avoid some patterning processes conducted by conventional etching and lithography (such as substrate etching and modulation) and are thereby useful for applications in which the substrates and materials must not be damaged during patterning. Simultaneously, it is also necessary to develop facile and economical methods producing inorganic patterns on various substrates without requiring a special apparatus while attaining the above-mentioned advantages. The present study proposes a reaction-based method for fabricating inorganic patterns by immersing substrates coated with a colloidal nanosheet into an aqueous solution containing inorganic precursors. Silica and TiO2 patterns spontaneously developed during the conversion of each inorganic precursor. These patterns were successful on rigid and flexible substrates. We fabricated these patterns on a wafer-sized silicon and large flexible poly(ethylene terephthalate) film, suggesting the scalability. We fabricated a biomimetic pattern on both sides of a glass window, as a photovoltaic roof, for minimal optical losses to maximally present photovoltaic effects of a solar cell. The TiO2 pattern on glass window exhibits sustainable sunlight-driven-cleaning activity for contaminants. The method could provide a platform for economical high-performance inorganic patterns for energy, environmental, electronics, and other areas.
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Affiliation(s)
- Min Ju Choi
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Young Ji Hwang
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Seung Beom Pyun
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jeong Han Kim
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jung Yeon Kim
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Woongpyo Hong
- Materials Research and Engineering Center, Hyundai Motor Company, 37 Cheoldobangmulgwan-ro, Uiwang-si, Gyeonggi-do 16082, Republic of Korea
| | - Jung-Yeon Park
- Materials Research and Engineering Center, Hyundai Motor Company, 37 Cheoldobangmulgwan-ro, Uiwang-si, Gyeonggi-do 16082, Republic of Korea
| | - Jinwoo Kwak
- Materials Research and Engineering Center, Hyundai Motor Company, 37 Cheoldobangmulgwan-ro, Uiwang-si, Gyeonggi-do 16082, Republic of Korea
| | - Eun Chul Cho
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
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13
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Inkjet-printable and low-temperature curable Ag–Ag2O mixed-phase conductive nanoink for flexible electronic applications. APPLIED NANOSCIENCE 2022. [DOI: 10.1007/s13204-022-02602-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
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14
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Divya M, Pradhan JR, Priyadarsini SS, Dasgupta S. High Operation Frequency and Strain Tolerance of Fully Printed Oxide Thin Film Transistors and Circuits on PET Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2202891. [PMID: 35843892 DOI: 10.1002/smll.202202891] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/10/2022] [Revised: 06/25/2022] [Indexed: 06/15/2023]
Abstract
The major limitations of solution-processed oxide electronics include high process temperatures and the absence of necessary strain tolerance that would be essential for flexible electronic applications. Here, a combination of low temperature (<100 °C) curable indium oxide nanoparticle ink and a conductive silver nanoink, which are used to fabricate fully-printed narrow-channel thin film transistors (TFTs) on polyethylene terephthalate (PET) substrates, is proposed. The metal ink is printed onto the In2 O3 nanoparticulate channel to narrow the effective channel lengths down to the thickness of the In2 O3 layer and thereby obtain near-vertical transport across the semiconductor layer. The TFTs thus prepared show On/Off ratio ≈106 and simultaneous maximum current density of 172 µA µm-1 . Next, the depletion-load inverters fabricated on PET substrates demonstrate signal gain >200 and operation frequency >300 kHz at low operation voltage of VDD = 2 V. In addition, the near-vertical transport across the semiconductor layer is found to be largely strain tolerant with insignificant change in the TFT and inverter performance observed under bending fatigue tests performed down to a bending radius of 1.5 mm, which translates to a strain value of 5%. The devices are also found to be robust against atmospheric exposure when remeasured after a month.
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Affiliation(s)
- Mitta Divya
- Department of Materials Engineering, Indian Institute of Science (IISc), Bangalore, 560012, India
| | - Jyoti Ranjan Pradhan
- Department of Materials Engineering, Indian Institute of Science (IISc), Bangalore, 560012, India
| | | | - Subho Dasgupta
- Department of Materials Engineering, Indian Institute of Science (IISc), Bangalore, 560012, India
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15
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Veerapandian S, Kim W, Kim J, Jo Y, Jung S, Jeong U. Printable inks and deformable electronic array devices. NANOSCALE HORIZONS 2022; 7:663-681. [PMID: 35660837 DOI: 10.1039/d2nh00089j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Deformable printed electronic array devices are expected to revolutionize next-generation electronics. However, although remarkable technological advances in printable inks and deformable electronic array devices have recently been achieved, technical challenges remain to commercialize these technologies. In this review article a brief introduction to printing methods highlighting significant research studies on ink formation for conductors, semiconductors, and insulators is provided, and the structural design and successful printing strategies of deformable electronic array devices are described. Successful device demonstrations are presented in the applications of passive- and active-matrix array devices. Finally, perspectives and technological challenges to be achieved are pointed out to print practically available deformable devices.
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Affiliation(s)
- Selvaraj Veerapandian
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea.
| | - Woojo Kim
- Department of Convergence IT Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Jaehyun Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea.
| | - Youngmin Jo
- Department of Convergence IT Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Sungjune Jung
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea.
- Department of Convergence IT Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea.
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16
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Simonenko NP, Fisenko NA, Fedorov FS, Simonenko TL, Mokrushin AS, Simonenko EP, Korotcenkov G, Sysoev VV, Sevastyanov VG, Kuznetsov NT. Printing Technologies as an Emerging Approach in Gas Sensors: Survey of Literature. SENSORS (BASEL, SWITZERLAND) 2022; 22:3473. [PMID: 35591162 PMCID: PMC9102873 DOI: 10.3390/s22093473] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/13/2022] [Revised: 04/28/2022] [Accepted: 04/29/2022] [Indexed: 02/04/2023]
Abstract
Herein, we review printing technologies which are commonly approbated at recent time in the course of fabricating gas sensors and multisensor arrays, mainly of chemiresistive type. The most important characteristics of the receptor materials, which need to be addressed in order to achieve a high efficiency of chemisensor devices, are considered. The printing technologies are comparatively analyzed with regard to, (i) the rheological properties of the employed inks representing both reagent solutions or organometallic precursors and disperse systems, (ii) the printing speed and resolution, and (iii) the thickness of the formed coatings to highlight benefits and drawbacks of the methods. Particular attention is given to protocols suitable for manufacturing single miniature devices with unique characteristics under a large-scale production of gas sensors where the receptor materials could be rather quickly tuned to modify their geometry and morphology. We address the most convenient approaches to the rapid printing single-crystal multisensor arrays at lab-on-chip paradigm with sufficiently high resolution, employing receptor layers with various chemical composition which could replace in nearest future the single-sensor units for advancing a selectivity.
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Affiliation(s)
- Nikolay P. Simonenko
- Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, 31 Leninsky pr., 119991 Moscow, Russia; (N.A.F.); (T.L.S.); (A.S.M.); (E.P.S.); (V.G.S.); (N.T.K.)
| | - Nikita A. Fisenko
- Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, 31 Leninsky pr., 119991 Moscow, Russia; (N.A.F.); (T.L.S.); (A.S.M.); (E.P.S.); (V.G.S.); (N.T.K.)
- Higher Chemical College of the Russian Academy of Sciences, D. Mendeleev University of Chemical Technology of Russia, 9 Miusskaya sq., 125047 Moscow, Russia
| | - Fedor S. Fedorov
- Laboratory of Nanomaterials, Skolkovo Institute of Science and Technology, 3 Nobel Str., 121205 Moscow, Russia;
| | - Tatiana L. Simonenko
- Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, 31 Leninsky pr., 119991 Moscow, Russia; (N.A.F.); (T.L.S.); (A.S.M.); (E.P.S.); (V.G.S.); (N.T.K.)
| | - Artem S. Mokrushin
- Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, 31 Leninsky pr., 119991 Moscow, Russia; (N.A.F.); (T.L.S.); (A.S.M.); (E.P.S.); (V.G.S.); (N.T.K.)
| | - Elizaveta P. Simonenko
- Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, 31 Leninsky pr., 119991 Moscow, Russia; (N.A.F.); (T.L.S.); (A.S.M.); (E.P.S.); (V.G.S.); (N.T.K.)
| | - Ghenadii Korotcenkov
- Department of Theoretical Physics, Moldova State University, 2009 Chisinau, Moldova;
| | - Victor V. Sysoev
- Department of Physics, Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya Str., 410054 Saratov, Russia
| | - Vladimir G. Sevastyanov
- Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, 31 Leninsky pr., 119991 Moscow, Russia; (N.A.F.); (T.L.S.); (A.S.M.); (E.P.S.); (V.G.S.); (N.T.K.)
| | - Nikolay T. Kuznetsov
- Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, 31 Leninsky pr., 119991 Moscow, Russia; (N.A.F.); (T.L.S.); (A.S.M.); (E.P.S.); (V.G.S.); (N.T.K.)
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17
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Chen Z, Gengenbach U, Liu X, Scholz A, Zimmermann L, Aghassi-Hagmann J, Koker L. An Automated Room Temperature Flip-Chip Mounting Process for Hybrid Printed Electronics. MICROMACHINES 2022; 13:mi13040583. [PMID: 35457888 PMCID: PMC9028054 DOI: 10.3390/mi13040583] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/25/2022] [Revised: 04/05/2022] [Accepted: 04/06/2022] [Indexed: 11/16/2022]
Abstract
Printing technology and mounting technology enable the novel field of hybrid printed electronics. To establish a hybrid printed system, one challenge is that the applied mounting process meets the requirements of functional inks and substrates. One of the most common requirements is low process temperature. Many functional inks and substrates cannot withstand the high temperatures required by traditional mounting processes. In this work, a standardized interconnection and an automated bump-less flip-chip mounting process using a room temperature curing conductive adhesive are realised. With the proposed process, the conductive adhesive selected for the standardized interconnection can be dispensed uniformly, despite its increase of viscosity already during pot time. Electrical and mechanical performance of the interconnection are characterized by four terminal resistance measurement and shear test. The herein proposed automated process allows for fabrication of hybrid printed devices in larger batch sizes than manual assembly processes used beforehand and thus, more comprehensive evaluation of device parameters. This is successfully demonstrated in a first application, a novel hybrid printed security device. The room temperature mounting process eliminates any potentially damaging thermal influence on the performance of the printed circuits that might result from other assembly techniques like soldering.
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Affiliation(s)
- Zehua Chen
- Institute of Automation and Applied Informatics, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany; (U.G.); (X.L.); (L.K.)
- Correspondence:
| | - Ulrich Gengenbach
- Institute of Automation and Applied Informatics, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany; (U.G.); (X.L.); (L.K.)
| | - Xinnan Liu
- Institute of Automation and Applied Informatics, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany; (U.G.); (X.L.); (L.K.)
| | - Alexander Scholz
- Institute of Nanotechnology, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany; (A.S.); (J.A.-H.)
| | - Lukas Zimmermann
- Hahn-Schickard-Gesellschaft für angewandte Forschung e.V., Wilhelm-Schickard-Straße 10, 78052 Villingen-Schwenningen, Germany;
| | - Jasmin Aghassi-Hagmann
- Institute of Nanotechnology, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany; (A.S.); (J.A.-H.)
| | - Liane Koker
- Institute of Automation and Applied Informatics, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany; (U.G.); (X.L.); (L.K.)
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18
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Sliz R, Molaiyan P, Fabritius T, Lassi U. Printed electronics to accelerate solid-state battery development. NANO EXPRESS 2022. [DOI: 10.1088/2632-959x/ac5d8e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Abstract
Abstract
The transition from conventional liquid electrolyte Li-ion batteries towards solid-state systems requires a paradigm shift on how these batteries are fabricated and how the R&D process can be augmented in order to fulfil the ever-increasing demand for reliable and high-performance energy storage systems. This work briefly looks over the main aspects of printed electronics and its potential to accelerate the development of solid-state batteries. It emphasizes the main challenges related to the fabrication of solid-state batteries and how printed electronics can address them in a timely and affordable manner. Importantly, the proposed printed electronics methods and solutions highlight the ability for immediate upscaling to mass production as well as downscaling for rapid prototyping and custom designing.
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Zhang Y, Zhang T, Huang Z, Yang J. A New Class of Electronic Devices Based on Flexible Porous Substrates. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105084. [PMID: 35038244 PMCID: PMC8895116 DOI: 10.1002/advs.202105084] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/08/2021] [Revised: 12/13/2021] [Indexed: 05/03/2023]
Abstract
With the advent of the Internet of Things era, the connection between electronic devices and humans is getting closer and closer. New-concept electronic devices including e-skins, nanogenerators, brain-machine interfaces, and implantable medical devices, can work on or inside human bodies, calling for wearing comfort, super flexibility, biodegradability, and stability under complex deformations. However, conventional electronics based on metal and plastic substrates cannot effectively meet these new application requirements. Therefore, a series of advanced electronic devices based on flexible porous substrates (e.g., paper, fabric, electrospun nanofibers, wood, and elastic polymer sponge) is being developed to address these challenges by virtue of their superior biocompatibility, breathability, deformability, and robustness. The porous structure of these substrates can not only improve device performance but also enable new functions, but due to their wide variety, choosing the right porous substrate is crucial for preparing high-performance electronics for specific applications. Herein, the properties of different flexible porous substrates are summarized and their basic principles of design, manufacture, and use are highlighted. Subsequently, various functionalization methods of these porous substrates are briefly introduced and compared. Then, the latest advances in flexible porous substrate-based electronics are demonstrated. Finally, the remaining challenges and future directions are discussed.
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Affiliation(s)
- Yiyuan Zhang
- Department of Mechanical and Materials EngineeringUniversity of Western OntarioLondonONN6A 5B9Canada
| | - Tengyuan Zhang
- Department of Mechanical and Materials EngineeringUniversity of Western OntarioLondonONN6A 5B9Canada
| | - Zhandong Huang
- Department of Mechanical and Materials EngineeringUniversity of Western OntarioLondonONN6A 5B9Canada
| | - Jun Yang
- Department of Mechanical and Materials EngineeringUniversity of Western OntarioLondonONN6A 5B9Canada
- Shenzhen Institute for Advanced StudyUniversity of Electronic Science and Technology of ChinaShenzhen518000P. R. China
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20
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Yang B, Jiang X, Fang X, Kong J. Wearable chem-biosensing devices: from basic research to commercial market. LAB ON A CHIP 2021; 21:4285-4310. [PMID: 34672310 DOI: 10.1039/d1lc00438g] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Wearable chem-biosensors have been garnering tremendous interest due to the significant potential in tailored healthcare diagnostics and therapeutics. With the development of the medical diagnostics revolution, wearable chem-biosensors as a rapidly emerging wave allow individuals to perform on-demand detection and obtain the required in-depth information. In contrast to commercial wearables, which tend to be miniaturized for measuring physical activities, the recent progressive wearable chem-biosensing device have mainly focused on non-invasive or minimally invasive monitoring biomarkers at the molecular level. Wearables is a multidisciplinary subject, and chem-biosensing is one of the most significant technologies. In this review, the currently basic academic research of wearable chem-biosensing devices and its commercial transformation were summarized and highlighted. Moreover, some representative wearable products on the market for individual health managements are presented. Strategies for the identification and sensing of biomarkers are discussed to further promote the development of wearable chem-biosensing devices. We also shared the limitations and breakthroughs of the next generation of chemo-biosensor wearables, from home use to clinical diagnosis.
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Affiliation(s)
- Bin Yang
- Department of Chemistry and Institutes of Biomedical Sciences, Fudan University, Shanghai, 200433, P. R. China.
| | - Xingyu Jiang
- Department of Biomedical Engineering, Shenzhen Bay Laboratory, Southern University of Science and Technology, Shenzhen, 518055, P. R. China.
| | - Xueen Fang
- Department of Chemistry and Institutes of Biomedical Sciences, Fudan University, Shanghai, 200433, P. R. China.
| | - Jilie Kong
- Department of Chemistry and Institutes of Biomedical Sciences, Fudan University, Shanghai, 200433, P. R. China.
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21
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Tang T, Zessin J, Talnack F, Haase K, Ortstein K, Li B, Löffler M, Rellinghaus B, Hambsch M, Mannsfeld SCB. Multimode Operation of Organic-Inorganic Hybrid Thin-Film Transistors Based on Solution-Processed Indium Oxide Films. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43051-43062. [PMID: 34478260 DOI: 10.1021/acsami.1c10982] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Solution-processed metal oxide (MO) thin films have been extensively studied for use in thin-film transistors (TFTs) due to their high optical transparency, simplicity of fabrication methods, and high electron mobility. Here, we report, for the first time, the improvement of the electronic properties of solution-processed indium oxide (InOx) films by the subsequent addition of an organic p-type semiconductor material, here 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), yielding organic-inorganic hybrid TFTs. The addition of TIPS-pentacene not only improves the electron mobility by enhancing the charge carrier percolation pathways but also improves the electronic and temporal stability of the IDS(VG) characteristics as well as reduces the number of required spin-coating steps of the InOx precursor solution. Very interestingly, the introduction of 10 nm TIPS-pentacene films on top of 15 nm InOx layers allows the fabrication of either enhancement- or depletion-mode devices with only minimal changes to the fabrication process. Specifically, we find that when the TIPS-pentacene layer is added on top of the source/drain electrodes, resulting in devices with embedded source/drain electrodes [embedded electrode TFTs (EETFTs)], the devices exhibit an enhancement-mode behavior with an average mobility (μ) of 6.4 cm2 V-1 s-1, a source-drain current ratio (Ion/Ioff) of around 105, and a near-zero threshold voltage (VTH). When on the other hand the TIPS-pentacene layer is added before the source-drain electrodes, i.e., in top-contact electrode TFTs (TCETFTs), a very clear depletion mode behavior is observed with an average μ of 6.3 cm2 V-1 s-1, an Ion/Ioff ratio of over 105, and a VTH of -80.3 V. Furthermore, a logic inverter is fabricated combining the enhancement (EETFTs)- and depletion (TCETFTs)-mode transistors, which shows a potential for the construction of organic-inorganic hybrid electronics and circuits.
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Affiliation(s)
- Tianyu Tang
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Dresden 01062, Germany
| | - Jakob Zessin
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Dresden 01062, Germany
| | - Felix Talnack
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Dresden 01062, Germany
| | - Katherina Haase
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Dresden 01062, Germany
| | - Katrin Ortstein
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden,Dresden 01062, Germany
| | | | - Markus Löffler
- Dresden Center for Nanoanalysis (DCN), Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Dresden 01069, Germany
| | - Bernd Rellinghaus
- Dresden Center for Nanoanalysis (DCN), Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Dresden 01069, Germany
| | - Mike Hambsch
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Dresden 01062, Germany
| | - Stefan C B Mannsfeld
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Dresden 01062, Germany
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22
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A Review on Printed Electronics: Fabrication Methods, Inks, Substrates, Applications and Environmental Impacts. JOURNAL OF MANUFACTURING AND MATERIALS PROCESSING 2021. [DOI: 10.3390/jmmp5030089] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
Innovations in industrial automation, information and communication technology (ICT), renewable energy as well as monitoring and sensing fields have been paving the way for smart devices, which can acquire and convey information to the Internet. Since there is an ever-increasing demand for large yet affordable production volumes for such devices, printed electronics has been attracting attention of both industry and academia. In order to understand the potential and future prospects of the printed electronics, the present paper summarizes the basic principles and conventional approaches while providing the recent progresses in the fabrication and material technologies, applications and environmental impacts.
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23
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UV-Responsive Screen-Printed Porous ZnO Nanostructures on Office Paper for Sustainable and Foldable Electronics. CHEMOSENSORS 2021. [DOI: 10.3390/chemosensors9080192] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/06/2023]
Abstract
The fabrication of low-cost, flexible, and recyclable electronic devices has been the focus of many research groups, particularly for integration in wearable technology and the Internet of Things (IoT). In this work, porous zinc oxide (ZnO) nanostructures are incorporated as a UV sensing material into the composition of a sustainable water-based screen-printable ink composed of carboxymethyl cellulose (CMC). The formulated ink is used to fabricate flexible and foldable UV sensors on ubiquitous office paper. The screen-printed CMC/ZnO UV sensors operate under low voltage (≤2 V) and reveal a stable response over several on/off cycles of UV light exposure. The devices reach a response current of 1.34 ± 0.15 mA and a rise and fall time of 8.2 ± 1.0 and 22.0 ± 2.3 s, respectively. The responsivity of the sensor is 432 ± 48 mA W−1, which is the highest value reported in the literature for ZnO-based UV sensors on paper substrates. The UV-responsive devices display impressive mechanical endurance under folding, showing a decrease in responsivity of only 21% after being folded 1000 times. Their low-voltage operation and extreme folding stability indicate a bright future for low-cost and sustainable flexible electronics, showing potential for low-power wearable applications and smart packaging.
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24
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Zhao X, Ou G, Lei M, Zhang Y, Li L, Ge A, Wang Y, Li Y, Liu BF. Rapid generation of hybrid biochemical/mechanical cues in heterogeneous droplets for high-throughput screening of cellular responses. LAB ON A CHIP 2021; 21:2691-2701. [PMID: 34165109 DOI: 10.1039/d1lc00209k] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Cells in their native microenvironment are subjected to varying combinations of biochemical cues and mechanical cues in a wide range. Although many signaling pathways have been found to be responsive for extracellular cues, little is known about how biochemical cues crosstalk with mechanical cues in a complex microenvironment. Here, we introduced heterogeneous droplets on a microchip, which were rapidly assembled by combining wettability-patterned microchip and programmed droplet manipulations, for a high-throughput cell screening of the varying combinations of biochemical cues and mechanical cues. This platform constructed a heterogeneous droplet/microgel array with orthogonal gradual chemicals and materials, which was further applied to analyze the cellular Wnt/β-catenin signaling in response to varying combinations of Wnt ligands and substrate stiffness. Thus, this device provides a powerful multiplexed bioassay platform for drug development, tissue engineering, and stem cell screening.
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Affiliation(s)
- Xing Zhao
- The Key Laboratory for Biomedical Photonics of MOE at Wuhan National Laboratory for Optoelectronics - Hubei Bioinformatics & Molecular Imaging Key Laboratory, Systems Biology Theme, Department of Biomedical Engineering, College of Life Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Gaozhi Ou
- School of Sports, China University of Geosciences, Wuhan, 430074, China
| | - Mengcheng Lei
- The Key Laboratory for Biomedical Photonics of MOE at Wuhan National Laboratory for Optoelectronics - Hubei Bioinformatics & Molecular Imaging Key Laboratory, Systems Biology Theme, Department of Biomedical Engineering, College of Life Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Yang Zhang
- School of Public Health (Shenzhen), Sun Yat-sen University, Shenzhen, 518100, China
| | - Lina Li
- The Key Laboratory for Biomedical Photonics of MOE at Wuhan National Laboratory for Optoelectronics - Hubei Bioinformatics & Molecular Imaging Key Laboratory, Systems Biology Theme, Department of Biomedical Engineering, College of Life Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Anle Ge
- The Key Laboratory for Biomedical Photonics of MOE at Wuhan National Laboratory for Optoelectronics - Hubei Bioinformatics & Molecular Imaging Key Laboratory, Systems Biology Theme, Department of Biomedical Engineering, College of Life Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Yachao Wang
- The Key Laboratory for Biomedical Photonics of MOE at Wuhan National Laboratory for Optoelectronics - Hubei Bioinformatics & Molecular Imaging Key Laboratory, Systems Biology Theme, Department of Biomedical Engineering, College of Life Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Yiwei Li
- The Key Laboratory for Biomedical Photonics of MOE at Wuhan National Laboratory for Optoelectronics - Hubei Bioinformatics & Molecular Imaging Key Laboratory, Systems Biology Theme, Department of Biomedical Engineering, College of Life Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Bi-Feng Liu
- The Key Laboratory for Biomedical Photonics of MOE at Wuhan National Laboratory for Optoelectronics - Hubei Bioinformatics & Molecular Imaging Key Laboratory, Systems Biology Theme, Department of Biomedical Engineering, College of Life Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China.
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25
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Liu A, Zhu H, Kim M, Kim J, Noh Y. Engineering Copper Iodide (CuI) for Multifunctional p-Type Transparent Semiconductors and Conductors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2100546. [PMID: 34306982 PMCID: PMC8292905 DOI: 10.1002/advs.202100546] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/09/2021] [Revised: 03/14/2021] [Indexed: 06/13/2023]
Abstract
Developing transparent p-type semiconductors and conductors has attracted significant interest in both academia and industry because metal oxides only show efficient n-type characteristics at room temperature. Among the different candidates, copper iodide (CuI) is one of the most promising p-type materials because of its widely adjustable conductivity from transparent electrodes to semiconducting layers in transistors. CuI can form thin films with high transparency in the visible light region using various low-temperature deposition techniques. This progress report aims to provide a basic understanding of CuI-based materials and recent progress in the development of various devices. The first section provides a brief introduction to CuI with respect to electronic structure, defect states, charge transport physics, and overviews the CuI film deposition methods. The material design concepts through doping/alloying approaches to adjust the optoelectrical properties are also discussed in the first section. The following section presents recent advances in state-of-the-art CuI-based devices, including transparent electrodes, thermoelectric devices, p-n diodes, p-channel transistors, light emitting diodes, and solar cells. In conclusion, current challenges and perspective opportunities are highlighted.
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Affiliation(s)
- Ao Liu
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)PohangGyeongbuk37673Republic of Korea
| | - Huihui Zhu
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)PohangGyeongbuk37673Republic of Korea
| | - Myung‐Gil Kim
- School of Advanced Materials Science and EngineeringSungkyunkwan UniversitySuwon16419Republic of Korea
| | - Junghwan Kim
- Materials Research Center for Element StrategyTokyo Institute of TechnologyMailbox SE‐6, 4259 Nagatsuta, Midori‐kuYokohama226‐8503Japan
| | - Yong‐Young Noh
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)PohangGyeongbuk37673Republic of Korea
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26
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Liu Q, Tian B, Liang J, Wu W. Recent advances in printed flexible heaters for portable and wearable thermal management. MATERIALS HORIZONS 2021; 8:1634-1656. [PMID: 34846496 DOI: 10.1039/d0mh01950j] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Flexible resistive heaters (FRHs) with high heating performance, large-area thermal homogeneity, and excellent thermal stability are very desirable in modern life, owing to their tremendous potential for portable and wearable thermal management applications, such as body thermotherapy, on-demand drug delivery, and artificial intelligence. Printed electronic (PE) technologies, as emerging methods combining conventional printing techniques with solution-processable functional ink have been proposed to be promising strategies for the cost-effective, large-scale, and high-throughput fabrication of printed FRHs. This review summarizes recent progress in the main components of FRHs, including conductive materials and flexible or stretchable substrates, focusing on the formulation of conductive ink systems for making printed FRHs by a variety of PE technologies including screen printing, inkjet printing, roll-to-roll (R2R) printing and three-dimensional (3D) printing. Various challenges facing the commercialization of printed FRHs and improved methods for portable and wearable thermal management applications have been discussed in detail to overcome these problems.
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Affiliation(s)
- Qun Liu
- Laboratory of Printable Functional Materials and Printed Electronics, School of Printing and Packaging, Wuhan University, Wuhan 430072, P. R. China.
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27
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Zeng M, Chen M, Huang D, Lei S, Zhang X, Wang L, Cheng Z. Engineered two-dimensional nanomaterials: an emerging paradigm for water purification and monitoring. MATERIALS HORIZONS 2021; 8:758-802. [PMID: 34821315 DOI: 10.1039/d0mh01358g] [Citation(s) in RCA: 48] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Water scarcity has become an increasingly complex challenge with the growth of the global population, economic expansion, and climate change, highlighting the demand for advanced water treatment technologies that can provide clean water in a scalable, reliable, affordable, and sustainable manner. Recent advancements on 2D nanomaterials (2DM) open a new pathway for addressing the grand challenge of water treatment owing to their unique structures and superior properties. Emerging 2D nanostructures such as graphene, MoS2, MXene, h-BN, g-C3N4, and black phosphorus have demonstrated an unprecedented surface-to-volume ratio, which promises ultralow material use, ultrafast processing time, and ultrahigh treatment efficiency for water cleaning/monitoring. In this review, we provide a state-of-the-art account on engineered 2D nanomaterials and their applications in emerging water technologies, involving separation, adsorption, photocatalysis, and pollutant detection. The fundamental design strategies of 2DM are discussed with emphasis on their physicochemical properties, underlying mechanism and targeted applications in different scenarios. This review concludes with a perspective on the pressing challenges and emerging opportunities in 2DM-enabled wastewater treatment and water-quality monitoring. This review can help to elaborate the structure-processing-property relationship of 2DM, and aims to guide the design of next-generation 2DM systems for the development of selective, multifunctional, programmable, and even intelligent water technologies. The global significance of clean water for future generations sheds new light and much inspiration in this rising field to enhance the efficiency and affordability of water treatment and secure a global water supply in a growing portion of the world.
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Affiliation(s)
- Minxiang Zeng
- Artie McFerrin Department of Chemical Engineering, Texas A&M University, College Station, TX 77843, USA.
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28
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Abstract
For decades, industrial companies have been collecting and storing high amounts of data with the aim of better controlling and managing their processes. However, this vast amount of information and hidden knowledge implicit in all of this data could be utilized more efficiently. With the help of data mining techniques unknown relationships can be systematically discovered. The production of semiconductors is a highly complex process, which entails several subprocesses that employ a diverse array of equipment. The size of the semiconductors signifies a high number of units can be produced, which require huge amounts of data in order to be able to control and improve the semiconductor manufacturing process. Therefore, in this paper a structured review is made through a sample of 137 papers of the published articles in the scientific community regarding data mining applications in semiconductor manufacturing. A detailed bibliometric analysis is also made. All data mining applications are classified in function of the application area. The results are then analyzed and conclusions are drawn.
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29
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Devabharathi N, M Umarji A, Dasgupta S. Fully Inkjet-Printed Mesoporous SnO 2-Based Ultrasensitive Gas Sensors for Trace Amount NO 2 Detection. ACS APPLIED MATERIALS & INTERFACES 2020; 12:57207-57217. [PMID: 33291878 DOI: 10.1021/acsami.0c14704] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Printed sensors are among the most successful groups of devices within the domain of printed electronics, both in terms of their application versatility and the emerging market share. However, reports on fully printed gas sensors are rare in the literature, even though it can be an important development toward fully printed multisensor platforms for diagnostics, process control, and environmental safety-related applications. In this regard, here, we present the traditional tin oxide-based completely inkjet-printed co-continuous and mesoporous thin films with an extremely large surface-to-volume ratio and then investigate their NO2 sensing properties at low temperatures. A method known as evaporation-induced self-assembly (EISA) has been mimicked in this study using pluronic F127 (PEO106-PPO70-PEO106) as the soft templating agent and xylene as the micelle expander to obtain highly reproducible and spatially homogeneous co-continuous mesoporous crystalline SnO2 with an average pore diameter of the order of 15-20 nm. The fully printed SnO2 gas sensors thus produced show high linearity for NO2 detection, along with extremely high average response of 11,507 at 5 ppm NO2. On the other hand, the sensors show an ultralow detection limit of the order of 20 ppb with an easy to amplify response of 31. While the excellent electronic transport properties along such co-continuous, mesoporous structures are ensured by their well-connected (co-continuous) ligaments and pores (thereby ensuring high surface area and high mobility transport at the same time) and may actually be responsible for the outstanding sensor performance that has been observed, the use of an industrial printing technique ascertains the possibility of high-throughput manufacturing of such sensor units toward inexpensive and wide-range applications.
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Affiliation(s)
- Nehru Devabharathi
- Department of Materials Engineering, Indian Institute of Science (IISc), C V Raman Avenue, Bangalore, Karnataka 560012, India
| | - Arun M Umarji
- Materials Research Centre, Indian Institute of Science (IISc), C V Raman Avenue, Bangalore, Karnataka 560012, India
| | - Subho Dasgupta
- Department of Materials Engineering, Indian Institute of Science (IISc), C V Raman Avenue, Bangalore, Karnataka 560012, India
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30
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Maddipatla D, Narakathu BB, Atashbar M. Recent Progress in Manufacturing Techniques of Printed and Flexible Sensors: A Review. BIOSENSORS 2020; 10:E199. [PMID: 33287324 PMCID: PMC7761663 DOI: 10.3390/bios10120199] [Citation(s) in RCA: 41] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/27/2020] [Revised: 11/24/2020] [Accepted: 11/29/2020] [Indexed: 12/11/2022]
Abstract
This review provides an outlook on some of the significant research work done on printed and flexible sensors. Printed sensors fabricated on flexible platforms such as paper, plastic and textiles have been implemented for wearable applications in the biomedical, defense, food, and environmental industries. This review discusses the materials, characterization methods, and fabrication methods implemented for the development of the printed and flexible sensors. The applications, challenges faced and future opportunities for the printed and flexible sensors are also presented in this review.
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Affiliation(s)
- Dinesh Maddipatla
- Electrical and Computer Engineering Department, Western Michigan University, Kalamazoo, MI 49006, USA; (B.B.N.); (M.A.)
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31
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Luo M, Zhu M, Wei M, Shao S, Robin M, Wei C, Cui Z, Zhao J, Zhang Z. Radiation-Hard and Repairable Complementary Metal-Oxide-Semiconductor Circuits Integrating n-type Indium Oxide and p-type Carbon Nanotube Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:49963-49970. [PMID: 33095560 DOI: 10.1021/acsami.0c12539] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Special radiation-hard and ultralow-power complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) are used in the fields of deep space, nuclear energy, and medical X-ray imaging. In this work, we first constructed radiation-hard, repairable, and sub-1 V-driven printed hybrid CMOS field-effect transistors (FETs) and ICs, which integrate printed carbon nanotube (CNT) (band gap ∼ 0.65 eV) p-type FETs and indium oxide (In2O3) (band gap ∼3.64 eV) n-type FETs on glass substrates using a printed PS-PMMA/[EMIM][TFSI] mixture as the gate dielectric layer. The PS-PMMA/[EMIM][TFSI] mixture gate dielectric layer not only lowered the supply voltage (VDD) by providing ultrahigh gate efficiency but also improved the anti-irradiation ability of the hybrid CMOS FETs and ICs. Specifically, the hybrid CMOS inverters exhibited rail-to-rail output with a high voltage gain and high noise margins at a low VDD that could be scaled down to 0.4 V. Furthermore, the hybrid CMOS FETs and ICs showed excellent radiation hardness, that is, withstanding a 3 Mrad (Si) total irradiation dose (TID) at a dose rate of 560 rad s-1 (Si), which is an exceptional result for CMOS transistors and ICs. Furthermore, the radiation-damaged CMOS FETs could be fully recovered by removing and reprinting the PS-PMMA/[EMIM][TFSI] mixture gate dielectric layer, indicating the ability to repair irradiation damage. This work provides an in-space IC fabrication technology.
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Affiliation(s)
- Manman Luo
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou 215123, P. R. China
- International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, P. R. China
| | - Maguang Zhu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Centre for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, P. R. China
| | - Miaomiao Wei
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou 215123, P. R. China
| | - Shuangshuang Shao
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou 215123, P. R. China
| | - Malo Robin
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou 215123, P. R. China
| | - Changting Wei
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou 215123, P. R. China
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, P. R. China
| | - Zheng Cui
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou 215123, P. R. China
| | - Jianwen Zhao
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou 215123, P. R. China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Centre for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, P. R. China
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32
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Lee SH, Lee S. Fabrication and Characterization of Roll-to-Roll-Coated Cantilever-Structured Touch Sensors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:46797-46803. [PMID: 33006885 DOI: 10.1021/acsami.0c14889] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
It is common in the field of printed electronics that polydimethylsiloxane (PDMS) be used as a dielectric layer for capacitive sensors because of its high elasticity and restoration force. However, capacitive sensors with the PDMS dielectric layer have a lower sensitivity than those with an air-gap structure that has been fabricated by the conventional micro-electromechanical system (MEMS) process. This paper presents a productive method for fabricating air-gap structures for touch sensors by roll-to-roll slot-die coating. The air-gap is formed by coating and removing a sacrificial layer. Cantilever-structured capacitive touch sensors with an air-gap are fabricated as follows: First, the bottom electrode, the dielectric layer, and the poly(vinyl alcohol) (PVA) sacrificial layer are roll-to-roll slot-die-coated on a flexible substrate. In addition, the spacer layer is spin-coated. On the sacrificial and spacer layers, the top electrode and structural layer are formed by spin-coating. Then, the air-gap and cantilever structure are made by removing the sacrificial layer in water. The cantilever-structured sensor samples are examined in terms of sensitivity, hysteresis, and repeatability. In particular, the electrical performance of the samples is compared to those with the PDMS dielectric layer. Experimental results show that the cantilever-structured sensor samples have significantly higher sensitivity compared to those with the PDMS dielectric layer.
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Affiliation(s)
- Sang Hoon Lee
- Department of Mechanical Design and Production Engineering, Konkuk University, 120 Neungdong-ro, Gwangjin-gu, Seoul 05029, Republic of Korea
| | - Sangyoon Lee
- Department of Mechanical Engineering, Konkuk University, 120 Neungdong-ro, Gwangjin-gu, Seoul 05029, Republic of Korea
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Jun L, Chen Q, Fu W, Yang Y, Zhu W, Zhang J. Electrospun Yb-Doped In 2O 3 Nanofiber Field-Effect Transistors for Highly Sensitive Ethanol Sensors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:38425-38434. [PMID: 32786210 DOI: 10.1021/acsami.0c12259] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Enhancing the reliability and sensitivity of gas sensors based on FETs has been of extensive concern for their practical application. However, few reports are available on nanofiber FET gas sensors fabricated by the electrospinning process. In this work, ethanol gas sensors based on Yb-doped In2O3 (InYbO) nanofiber FETs are fabricated by a simple and fast electrospinning method. The optimized In2O3 nanofiber FETs with a doping concentration of 4 mol % show a better electrical performance, including a high mobility of 6.67 cm2/Vs, an acceptable threshold voltage of 3.27 V, and a suitable on/off current ratio of 107, especially the enhanced bias-stress stability. When employed in ethanol gas sensors, the gas sensors exhibit enhanced stability and improved sensitivity with a high response of 40-10 ppm, which is remarkably higher than that of previously reported ethanol gas sensors. Moreover, the InYbO nanofiber FET sensors also demonstrate a low limit of detection of 1 ppm and improved sensing performance ranging from sensitivity to the ability of selectivity. This work opens up a new prospect to achieve highly sensitive, selective, and reliable ethanol gas sensors using electrospun Yb-In2O3 nanofiber FETs with improved stability.
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Affiliation(s)
- Li Jun
- School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800, People's Republic of China
- Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, People's Republic of China
| | - Qi Chen
- School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800, People's Republic of China
| | - Wenhui Fu
- School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800, People's Republic of China
| | - Yaohua Yang
- School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800, People's Republic of China
| | - Wenqing Zhu
- School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800, People's Republic of China
| | - Jianhua Zhang
- Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, People's Republic of China
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34
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Nugraha MI, Yarali E, Firdaus Y, Lin Y, El-Labban A, Gedda M, Lidorikis E, Yengel E, Faber H, Anthopoulos TD. Rapid Photonic Processing of High-Electron-Mobility PbS Colloidal Quantum Dot Transistors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:31591-31600. [PMID: 32564590 PMCID: PMC7467567 DOI: 10.1021/acsami.0c06306] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/06/2020] [Accepted: 06/22/2020] [Indexed: 05/24/2023]
Abstract
Recent advances in solution-processable semiconducting colloidal quantum dots (CQDs) have enabled their use in a range of (opto)electronic devices. In most of these studies, device fabrication relied almost exclusively on thermal annealing to remove organic residues and enhance inter-CQD electronic coupling. Despite its widespread use, however, thermal annealing is a lengthy process, while its effectiveness to eliminate organic residues remains limited. Here, we exploit the use of xenon flash lamp sintering to post-treat solution-deposited layers of lead sulfide (PbS) CQDs and their application in n-channel thin-film transistors (TFTs). The process is simple, fast, and highly scalable and allows for efficient removal of organic residues while preserving both quantum confinement and high channel current modulation. Bottom-gate, top-contact PbS CQD TFTs incorporating SiO2 as the gate dielectric exhibit a maximum electron mobility of 0.2 cm2 V-1 s-1, a value higher than that of control transistors (≈10-2 cm2 V-1 s-1) processed via thermal annealing for 30 min at 120 °C. Replacing SiO2 with a polymeric dielectric improves the transistor's channel interface, leading to a significant increase in electron mobility to 3.7 cm2 V-1 s-1. The present work highlights the potential of flash lamp annealing as a promising method for the rapid manufacture of PbS CQD-based (opto)electronic devices and circuits.
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Affiliation(s)
- Mohamad I. Nugraha
- Physical Sciences
and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Emre Yarali
- Physical Sciences
and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Yuliar Firdaus
- Physical Sciences
and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Yuanbao Lin
- Physical Sciences
and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Abdulrahman El-Labban
- Physical Sciences
and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Murali Gedda
- Physical Sciences
and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Elefterios Lidorikis
- Department of Materials Science and Engineering, University of Ioannina, Ioannina 45110, Greece
| | - Emre Yengel
- Physical Sciences
and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Hendrik Faber
- Physical Sciences
and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Thomas D. Anthopoulos
- Physical Sciences
and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
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35
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Zhuang X, Patel S, Zhang C, Wang B, Chen Y, Liu H, Dravid VP, Yu J, Hu YY, Huang W, Facchetti A, Marks TJ. Frequency-Agile Low-Temperature Solution-Processed Alumina Dielectrics for Inorganic and Organic Electronics Enhanced by Fluoride Doping. J Am Chem Soc 2020; 142:12440-12452. [PMID: 32539371 DOI: 10.1021/jacs.0c05161] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
The frequency-dependent capacitance of low-temperature solution-processed metal oxide (MO) dielectrics typically yields unreliable and unstable thin-film transistor (TFT) performance metrics, which hinders the development of next-generation roll-to-roll MO electronics and obscures intercomparisons between processing methodologies. Here, capacitance values stable over a wide frequency range are achieved in low-temperature combustion-synthesized aluminum oxide (AlOx) dielectric films by fluoride doping. For an optimal F incorporation of ∼3.7 atomic % F, the F:AlOx film capacitance of 166 ± 11 nF/cm2 is stable over a 10-1-104 Hz frequency range, far more stable than that of neat AlOx films (capacitance = 336 ± 201 nF/cm2) which falls from 781 ± 85 nF/cm2 to 104 ± 4 nF/cm2 over this frequency range. Importantly, both n-type/inorganic and p-type/organic TFTs exhibit reliable electrical characteristics with minimum hysteresis when employing the F:AlOx dielectric with ∼3.7 atomic % F. Systematic characterization of film microstructural/compositional and electronic/dielectric properties by X-ray photoelectron spectroscopy, time-of-fight secondary ion mass spectrometry, cross-section transmission electron microscopy, solid-state nuclear magnetic resonance, and UV-vis absorption spectroscopy reveal that fluoride doping generates AlOF, which strongly reduces the mobile hydrogen content, suppressing polarization mechanisms at low frequencies. Thus, this work provides a broadly applicable anion doping strategy for the realization of high-performance solution-processed metal oxide dielectrics for both organic and inorganic electronics applications.
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Affiliation(s)
- Xinming Zhuang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Technology, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China.,Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Sawankumar Patel
- Department of Chemistry and Biochemistry, Florida State University, Tallahassee, Florida 32306, United States
| | - Chi Zhang
- Department of Materials Science and Engineering, The NUANCE Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Binghao Wang
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Yao Chen
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Haoyu Liu
- Department of Chemistry and Biochemistry, Florida State University, Tallahassee, Florida 32306, United States
| | - Vinayak P Dravid
- Department of Materials Science and Engineering, The NUANCE Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Junsheng Yu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Technology, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China
| | - Yan-Yan Hu
- Department of Chemistry and Biochemistry, Florida State University, Tallahassee, Florida 32306, United States.,Center of Interdisciplinary Magnetic Resonance, National High Magnetic Field Laboratory, 1800 East Paul Dirac Drive, Tallahassee, Florida 32310, United States
| | - Wei Huang
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States.,Flexterra Corporation, 8025 Lamon Avenue, Skokie, Illinois 60077, United States
| | - Tobin J Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
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Takei A, Kusaka Y, Komazaki Y, Yoshida M. Stretchable Light-Emitting Device Using a Film/Elastomer Bilayer System with Electrodes Patterned by Printed Electronics Technique. J PHOTOPOLYM SCI TEC 2020. [DOI: 10.2494/photopolymer.33.413] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Atsushi Takei
- National Institute of Advanced Industrial Science and Technology (AIST)
| | - Yasuyuki Kusaka
- National Institute of Advanced Industrial Science and Technology (AIST)
| | - Yusuke Komazaki
- National Institute of Advanced Industrial Science and Technology (AIST)
| | - Manabu Yoshida
- National Institute of Advanced Industrial Science and Technology (AIST)
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37
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Chai Z, Korkmaz A, Yilmaz C, Busnaina AA. High-Rate Printing of Micro/Nanoscale Patterns Using Interfacial Convective Assembly. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2000747. [PMID: 32323404 DOI: 10.1002/adma.202000747] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2020] [Revised: 03/17/2020] [Accepted: 03/18/2020] [Indexed: 06/11/2023]
Abstract
Printing of electronics has been receiving increasing attention from academia and industry over the recent years. However, commonly used printing techniques have limited resolution of micro- or sub-microscale. Here, a directed-assembly-based printing technique, interfacial convective assembly, is reported, which utilizes a substrate-heating-induced solutal Marangoni convective flow to drive particles toward patterned substrates and then uses van der Waals interactions as well as geometrical confinement to trap the particles in the pattern areas. The influence of various assembly parameters including type of mixing solvent, substrate temperature, particle concentration, and assembly time is investigated. The results show successful assembly of various nanoparticles in patterns of different shapes with a high resolution down to 25 nm. In addition, the assembly only takes a few minutes, which is two orders of magnitude faster than conventional convective assembly. Small-sized (diameter below 5 nm) nanoparticles tend to coalesce during the assembly process and form sintered structures. The fabricated silver nanorods show single-crystal structure with a low resistivity of 8.58 × 10-5 Ω cm. With high versatility, high resolution, and high throughput, the interfacial convective assembly opens remarkable opportunities for printing next generation nanoelectronics and sensors.
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Affiliation(s)
- Zhimin Chai
- NSF Nanoscale Science and Engineering Center for High-Rate Nanomanufacturing (CHN), Northeastern University, Boston, MA, 02115, USA
| | - Adnan Korkmaz
- NSF Nanoscale Science and Engineering Center for High-Rate Nanomanufacturing (CHN), Northeastern University, Boston, MA, 02115, USA
| | - Cihan Yilmaz
- NSF Nanoscale Science and Engineering Center for High-Rate Nanomanufacturing (CHN), Northeastern University, Boston, MA, 02115, USA
| | - Ahmed A Busnaina
- NSF Nanoscale Science and Engineering Center for High-Rate Nanomanufacturing (CHN), Northeastern University, Boston, MA, 02115, USA
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38
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Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors. NANOMATERIALS 2020; 10:nano10050965. [PMID: 32443597 PMCID: PMC7325575 DOI: 10.3390/nano10050965] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/19/2020] [Revised: 05/13/2020] [Accepted: 05/13/2020] [Indexed: 01/27/2023]
Abstract
Thin-film transistors (TFTs) made of metal oxide semiconductors are now increasingly used in flat-panel displays. Metal oxides are mainly fabricated via vacuum-based technologies, but solution approaches are of great interest due to the advantages of low-cost and high-throughput manufacturing. Unfortunately, solution-processed oxide TFTs suffer from relatively poor electrical performance, hindering further development. Recent studies suggest that this issue could be solved by introducing a novel heterojunction strategy. This article reviews the recent advances in solution-processed heterojunction oxide TFTs, with a specific focus on the latest developments over the past five years. Two of the most prominent advantages of heterostructure oxide TFTs are discussed, namely electrical-property modulation and mobility enhancement by forming 2D electron gas. It is expected that this review will manifest the strong potential of solution-based heterojunction oxide TFTs towards high performance and large-scale electronics.
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39
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Zhang YZ, Wang Y, Jiang Q, El-Demellawi JK, Kim H, Alshareef HN. MXene Printing and Patterned Coating for Device Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1908486. [PMID: 32239560 DOI: 10.1002/adma.201908486] [Citation(s) in RCA: 118] [Impact Index Per Article: 29.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/27/2019] [Revised: 02/18/2020] [Accepted: 02/20/2020] [Indexed: 05/08/2023]
Abstract
As a thriving member of the 2D nanomaterials family, MXenes, i.e., transition metal carbides, nitrides, and carbonitrides, exhibit outstanding electrochemical, electronic, optical, and mechanical properties. They have been exploited in many applications including energy storage, electronics, optoelectronics, biomedicine, sensors, and catalysis. Compared to other 2D materials, MXenes possess a unique set of properties such as high metallic conductivity, excellent dispersion quality, negative surface charge, and hydrophilicity, making them particularly suitable as inks for printing applications. Printing and pre/post-patterned coating methods represent a whole range of simple, economically efficient, versatile, and eco-friendly manufacturing techniques for devices based on MXenes. Moreover, printing can allow for complex 3D architectures and multifunctionality that are highly required in various applications. By means of printing and patterned coating, the performance and application range of MXenes can be dramatically increased through careful patterning in three dimensions; thus, printing/coating is not only a device fabrication tool but also an enabling tool for new applications as well as for industrialization.
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Affiliation(s)
- Yi-Zhou Zhang
- Physical Sciences and Engineering Division, Materials Science & Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Yang Wang
- University of Twente, MESA+ Institute for Nanotechnology, P. O. Box 217, Enschede, 7500 AE, The Netherlands
| | - Qiu Jiang
- Physical Sciences and Engineering Division, Materials Science & Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Jehad K El-Demellawi
- Physical Sciences and Engineering Division, Materials Science & Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Hyunho Kim
- Physical Sciences and Engineering Division, Materials Science & Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Husam N Alshareef
- Physical Sciences and Engineering Division, Materials Science & Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
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40
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Inkjet-Printed Top-Gate Thin-Film Transistors Based on InGaSnO Semiconductor Layer with Improved Etching Resistance. COATINGS 2020. [DOI: 10.3390/coatings10040425] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Inkjet-printed top-gate metal oxide (MO) thin-film transistors (TFTs) with InGaSnO semiconductor layer and carbon-free aqueous gate dielectric ink are demonstrated. It is found that the InGaO semiconductor layer without Sn doping is seriously damaged after printing aqueous gate dielectric ink onto it. By doping Sn into InGaO, the acid resistance is enhanced. As a result, the printed InGaSnO semiconductor layer is almost not affected during printing the following gate dielectric layer. The TFTs based on the InGaSnO semiconductor layer exhibit higher mobility, less hysteresis, and better stability compared to those based on InGaO semiconductor layer. To the best of our knowledge, it is for the first time to investigate the interface chemical corrosivity of inkjet-printed MO-TFTs. It paves a way to overcome the solvent etching problems for the printed TFTs.
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41
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Khan Y, Thielens A, Muin S, Ting J, Baumbauer C, Arias AC. A New Frontier of Printed Electronics: Flexible Hybrid Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1905279. [PMID: 31742812 DOI: 10.1002/adma.201905279] [Citation(s) in RCA: 145] [Impact Index Per Article: 36.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2019] [Revised: 09/08/2019] [Indexed: 05/27/2023]
Abstract
The performance and integration density of silicon integrated circuits (ICs) have progressed at an unprecedented pace in the past 60 years. While silicon ICs thrive at low-power high-performance computing, creating flexible and large-area electronics using silicon remains a challenge. On the other hand, flexible and printed electronics use intrinsically flexible materials and printing techniques to manufacture compliant and large-area electronics. Nonetheless, flexible electronics are not as efficient as silicon ICs for computation and signal communication. Flexible hybrid electronics (FHE) leverages the strengths of these two dissimilar technologies. It uses flexible and printed electronics where flexibility and scalability are required, i.e., for sensing and actuating, and silicon ICs for computation and communication purposes. Combining flexible electronics and silicon ICs yields a very powerful and versatile technology with a vast range of applications. Here, the fundamental building blocks of an FHE system, printed sensors and circuits, thinned silicon ICs, printed antennas, printed energy harvesting and storage modules, and printed displays, are discussed. Emerging application areas of FHE in wearable health, structural health, industrial, environmental, and agricultural sensing are reviewed. Overall, the recent progress, fabrication, application, and challenges, and an outlook, related to FHE are presented.
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Affiliation(s)
- Yasser Khan
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Arno Thielens
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Sifat Muin
- Department of Civil and Environmental Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Jonathan Ting
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Carol Baumbauer
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Ana C Arias
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, 94720, USA
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42
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Lim HR, Kim HS, Qazi R, Kwon YT, Jeong JW, Yeo WH. Advanced Soft Materials, Sensor Integrations, and Applications of Wearable Flexible Hybrid Electronics in Healthcare, Energy, and Environment. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1901924. [PMID: 31282063 DOI: 10.1002/adma.201901924] [Citation(s) in RCA: 274] [Impact Index Per Article: 68.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2019] [Revised: 04/18/2019] [Indexed: 05/19/2023]
Abstract
Recent advances in soft materials and system integration technologies have provided a unique opportunity to design various types of wearable flexible hybrid electronics (WFHE) for advanced human healthcare and human-machine interfaces. The hybrid integration of soft and biocompatible materials with miniaturized wireless wearable systems is undoubtedly an attractive prospect in the sense that the successful device performance requires high degrees of mechanical flexibility, sensing capability, and user-friendly simplicity. Here, the most up-to-date materials, sensors, and system-packaging technologies to develop advanced WFHE are provided. Details of mechanical, electrical, physicochemical, and biocompatible properties are discussed with integrated sensor applications in healthcare, energy, and environment. In addition, limitations of the current materials are discussed, as well as key challenges and the future direction of WFHE. Collectively, an all-inclusive review of the newly developed WFHE along with a summary of imperative requirements of material properties, sensor capabilities, electronics performance, and skin integrations is provided.
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Affiliation(s)
- Hyo-Ryoung Lim
- George W. Woodruff School of Mechanical Engineering, Institute for Electronics and Nanotechnology, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Hee Seok Kim
- Department of Mechanical Engineering, University of South Alabama, Mobile, AL, 36608, USA
| | - Raza Qazi
- Department of Electrical, Computer & Energy Engineering, University of Colorado Boulder, Boulder, CO, 80309, USA
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, South Korea
| | - Young-Tae Kwon
- George W. Woodruff School of Mechanical Engineering, Institute for Electronics and Nanotechnology, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Jae-Woong Jeong
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, South Korea
| | - Woon-Hong Yeo
- George W. Woodruff School of Mechanical Engineering, Wallace H. Coulter Department of Biomedical Engineering, Institute for Electronics and Nanotechnology, Parker H. Petit Institute for Bioengineering and Biosciences, Center for Flexible and Wearable Electronics Advanced Research, Neural Engineering Center, Institute for Materials, Institute for Robotics and Intelligent Machines, Georgia Institute of Technology, Atlanta, GA, 30332, USA
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43
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de Urquijo-Ventura M, Rao MS, Meraz-Davila S, Ochoa JT, Quevedo-Lopez M, Ramirez-Bon R. PVP-SiO2 and PVP-TiO2 hybrid films for dielectric gate applications in CdS-based thin film transistors. POLYMER 2020. [DOI: 10.1016/j.polymer.2020.122261] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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44
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Efimov A, Arsenov P, Kornyushin D, Lizunova A, Volkov I, Ivanov V. Aerosol Jet Printing of Silver Lines with A High Aspect Ratio on A Heated Silicon Substrate. MATERIALS 2020; 13:ma13030730. [PMID: 32033471 PMCID: PMC7040915 DOI: 10.3390/ma13030730] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/19/2019] [Revised: 01/24/2020] [Accepted: 02/04/2020] [Indexed: 12/13/2022]
Abstract
In this work, we studied the formation of conductive silver lines with high aspect ratios (AR = thickness/width) > 0.1 using the modernized method of aerosol jet printing on a heated silicon substrate. The geometric (AR) and electrical (resistivity) parameters of the formed lines were investigated depending on the number of printing layers (1–10 layers) and the temperature of the substrate (25–300 °C). The AR of the lines increased as the number of printing layers and the temperature of the substrate increased. An increase in the AR of the lines with increasing substrate temperature was associated with a decrease in the ink spreading as a result of an increase in the rate of evaporation of nano-ink. Moreover, with an increase in the substrate temperature of more than 200 °C, a significant increase in the porosity of the formed lines was observed, and as a result, the electrical resistivity of the lines increased significantly. Taking into account the revealed regularities, it was demonstrated that the formation of silver lines with a high AR > 0.1 and a low electrical resistivity of 2–3 μΩ∙cm is advisable to be carried out at a substrate temperature of about 100 °C. The adhesion strength of silver films formed on a heated silicon substrate is 2.8 ± 0.9 N/mm2, which further confirms the suitability of the investigated method of aerosol jet printing for electronic applications.
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45
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Spun Carbon Nanotube Fibres and Films as an Alternative to Printed Electronic Components. MATERIALS 2020; 13:ma13020431. [PMID: 31963300 PMCID: PMC7014151 DOI: 10.3390/ma13020431] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/10/2019] [Revised: 01/10/2020] [Accepted: 01/14/2020] [Indexed: 01/17/2023]
Abstract
Current studies of carbon nanotubes have enabled both new electronic applications and improvements to the performance of existing ones. Manufacturing of macroscopic electronic components with this material generally involves the use of printed electronic methods, which must use carbon nanotube (CNT) powders. However, in recent years, it has been shown that the use of ready-made self-standing macroscopic CNT assemblies could have considerable potential in the future development of electronic components. Two examples of these are spun carbon nanotube fibers and CNT films. The following paper considers whether these spun materials may replace printed electronic CNT elements in all applications. To enable the investigation of this question some practical experiments were undertaken. They included the formation of smart textile elements, flexible and transparent components, and structural electronic devices. By taking this approach it has been possible to show that CNT fibres and films are highly versatile materials that may improve the electrical and mechanical performance of many currently produced printed electronic elements. Additionally, the use of these spun materials may enable many new applications and functionalities particularly in the area of e-textiles. However, as with every new technology, it has its limitations, and these are also considered.
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46
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Li H, Liang J. Recent Development of Printed Micro-Supercapacitors: Printable Materials, Printing Technologies, and Perspectives. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1805864. [PMID: 30941808 DOI: 10.1002/adma.201805864] [Citation(s) in RCA: 58] [Impact Index Per Article: 14.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/09/2018] [Revised: 01/25/2019] [Indexed: 05/19/2023]
Abstract
The rapid progression of portable and wearable electronics has necessitated the development of high-performing, miniaturized energy-storage devices with flexible form factors and high energy and power delivery. Printed micro-supercapacitors (MSCs), with in-plane interdigital configurations, is touted as a promising choice to fulfill these requirements. New printing technologies can assemble MSCs with fiscal and environmental benefits, large form factors, and at high throughputs, qualities not afforded with conventional microfabrication technologies. Here, recent progress in the preparation of functional ink systems for wearable MSCs, encompassing electrode materials, conductor materials, and electrolytes, is presented. First, a comprehensive background of the fundamentals of printing technology is introduced, with discussions focusing on methods of improving ink functionality while simultaneously retaining good printability. Second, various printing techniques to ensure manufacturable scaling of wearable MSCs with high areal electrochemical performance and small footprint are explored. Within the scope of these two topics, various issues that hinder the full materialization of widespread adoption of printed MSC and next steps to overcome these issues are discussed. Further deep dives in scientific and technical challenges are also presented, including limited functionality of the inks, low printing resolution, overlay accuracy, and complex encapsulation.
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Affiliation(s)
- Hongpeng Li
- School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Jiajie Liang
- School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
- Key Laboratory of Functional Polymer Materials of Ministry of Education, College of Chemistry, Nankai University, Tianjin, 300350, P. R. China
- Tianjin Key Laboratory of Metal and Molecule-Based Material Chemistry and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Nankai University, Tianjin, 300350, P. R. China
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47
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Wang Z, Kang Y, Zhao S, Zhu J. Self-Limiting Assembly Approaches for Nanoadditive Manufacturing of Electronic Thin Films and Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1806480. [PMID: 30907467 DOI: 10.1002/adma.201806480] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2018] [Revised: 01/24/2019] [Indexed: 06/09/2023]
Abstract
Most electronics consist of functional thin films with tens of nanometer thicknesses. It is usually challenging to control the growth of these thin films using conventional solution-based approaches. Nanoadditive manufacturing, a method to deposit electronically desired molecules, polymers, or nanomaterials in a layer-by-layer (LbL) fashion, has emerged as a promising technique for the precise control of film growth and device fabrication. Here, basic principles of nanoadditive manufacturing approaches with self-limiting characteristics are summarized with a particular focus on Langmuir-Blodgett assembly and LbL assembly. Additively manufactured electronic thin films with properties of conductors, semiconductors, and dielectrics are reviewed, followed by a discussion of their application in various electronics, such as field-effect transistors, sensors, memory devices, photodetectors, light-emitting diodes, and electrochromic devices. Finally, challenges and future developments of these approaches are proposed. The resulting analysis reveals promising opportunities of nanoadditive manufacturing for the solution-based fabrication of electronic devices.
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Affiliation(s)
- Zhao Wang
- School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Yu Kang
- School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Sanchuan Zhao
- School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Jian Zhu
- School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
- Tianjin Key Laboratory of Metal and Molecule-Based Material Chemistry & Tianjin Key Laboratory for Rare Earth Materials and Applications, Nankai University, Tianjin, 300350, P. R. China
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Ochoa MA, Maslar JE, Bennett HS. Extracting electron densities in n-type GaAs from Raman spectra: Comparisons with Hall measurements. JOURNAL OF APPLIED PHYSICS 2020; 128:10.1063/5.0011247. [PMID: 34131350 PMCID: PMC8201599 DOI: 10.1063/5.0011247] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2020] [Accepted: 08/04/2020] [Indexed: 05/29/2023]
Abstract
We demonstrate quantitatively how values of electron densities in GaAs extracted from Raman spectra of two samples depend on models used to describe electric susceptibility and band structure. We, therefore, developed a theory that is valid for any temperature, doping level, and energy ratio proportional to q 2=(ω + iγ) (where q is the magnitude of wave vector, ω is Raman frequency, and γ is plasmon damping). We use a full Mermin-Lindhard description of Raman line shape and compare n-type GaAs spectra obtained from epilayers with our simulated spectra. Our method is unique in two ways: (1) we do a sensitivity analysis by employing four different descriptions of the GaAs band structure to give electron densities as functions of Fermi energies and (2) one of the four band structure descriptions includes bandgap narrowing that treats self-consistently the many-body effects of exchange and correlation in distorted-electron densities of states and solves the charge neutrality equation for a two-band model of GaAs at 300 K. We apply these results to obtain electron densities from line shapes of Raman spectra and thereby demonstrate quantitatively how the values of electron densities extracted from Raman spectra of n-type GaAs depend of various models for susceptibility and band structure.
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Affiliation(s)
- Maicol A. Ochoa
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
- Institute for Research in Electronics and Applied Physics and Maryland Nanocenter, University of Maryland, College Park, Maryland 20742, USA
| | - James E. Maslar
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
| | - Herbert S. Bennett
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
- AltaTech Strategies LLC, Kensington, Maryland, 20891, USA
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49
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Neuper F, Chandresh A, Singaraju SA, Aghassi-Hagmann J, Hahn H, Breitung B. Tailoring Threshold Voltages of Printed Electrolyte-Gated Field-Effect Transistors by Chromium Doping of Indium Oxide Channels. ACS OMEGA 2019; 4:20579-20585. [PMID: 31858043 PMCID: PMC6906765 DOI: 10.1021/acsomega.9b02513] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/06/2019] [Accepted: 10/23/2019] [Indexed: 06/10/2023]
Abstract
Printed systems spark immense interest in industry, and for several parts such as solar cells or radio frequency identification antennas, printed products are already available on the market. This has led to intense research; however, printed field-effect transistors (FETs) and logics derived thereof still have not been sufficiently developed to be adapted by industry. Among others, one of the reasons for this is the lack of control of the threshold voltage during production. In this work, we show an approach to adjust the threshold voltage (V th) in printed electrolyte-gated FETs (EGFETs) with high accuracy by doping indium-oxide semiconducting channels with chromium. Despite high doping concentrations achieved by a wet chemical process during precursor ink preparation, good on/off-ratios of more than five orders of magnitude could be demonstrated. The synthesis process is simple, inexpensive, and easily scalable and leads to depletion-mode EGFETs, which are fully functional at operation potentials below 2 V and allows us to increase V th by approximately 0.5 V.
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Affiliation(s)
- Felix Neuper
- Institute of Nanotechnology (INT) and Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Baden-Württemberg, Germany
- KIT-TUD
Joint Research Laboratory Nanomaterials Institute of Materials Science, Technische Universität Darmstadt (TUD), D-64206 Darmstadt, Hessen, Germany
| | - Abhinav Chandresh
- Institute of Nanotechnology (INT) and Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Baden-Württemberg, Germany
| | - Surya Abhishek Singaraju
- Institute of Nanotechnology (INT) and Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Baden-Württemberg, Germany
| | - Jasmin Aghassi-Hagmann
- Institute of Nanotechnology (INT) and Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Baden-Württemberg, Germany
- Institute
of Applied Research, Offenburg University
of Applied Sciences, Badstraße 25, D-77652 Offenburg, Baden-Württemberg, Germany
| | - Horst Hahn
- Institute of Nanotechnology (INT) and Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Baden-Württemberg, Germany
- KIT-TUD
Joint Research Laboratory Nanomaterials Institute of Materials Science, Technische Universität Darmstadt (TUD), D-64206 Darmstadt, Hessen, Germany
| | - Ben Breitung
- Institute of Nanotechnology (INT) and Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Baden-Württemberg, Germany
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Cai Y, Yao X, Piao X, Zhang Z, Nie E, Sun Z. Inkjet printing of particle-free silver conductive ink with low sintering temperature on flexible substrates. Chem Phys Lett 2019. [DOI: 10.1016/j.cplett.2019.136857] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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