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Yang R, Gao Y, Wang S, Jin K. High-Mobility Magnetic Two-Dimensional Electron Gas in Engineered Oxide Interfaces. ACS APPLIED MATERIALS & INTERFACES 2023; 15:2376-2383. [PMID: 36577504 DOI: 10.1021/acsami.2c17638] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The engineered interfaces of complex oxides have abundant physical properties and provide a powerful platform for the exploration of fundamental physics and emergent phenomena. In particular, research on the two-dimensional magnetic systems with high mobility remains a long-standing challenge for the discovery of quantum phase and spintronic applications. Here, we introduce a few atomic layers of the delta doping layer at LaAlO3/SrTiO3 interfaces through elaborately controllable epitaxial growth of SrRuO3. After inserting a SrRuO3 buffer layer, the interfaces exhibit a well-defined anomalous Hall effect up to 100 K and their mobility is enhanced by 3 orders of magnitude at low temperatures. More intriguingly, a large unsaturated positive magnetoresistance is created at interfaces. Combining with the density functional theory calculation, we attribute our findings to the electron transfer at interfaces and the magnetic moment of Ru4+ 4d bands. The results pave a way for further research of two-dimensional ferromagnetism and quantum transport in all-oxide systems.
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Affiliation(s)
- Ruishu Yang
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry Under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710072, China
| | - Yuqiang Gao
- Department of Physics, School of Physics and Electronic Information, Anhui Normal University, Wuhu241000, China
| | - Shuanhu Wang
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry Under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710072, China
| | - Kexin Jin
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry Under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710072, China
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Kwak Y, Han W, Lee JS, Song J, Kim J. Hysteretic temperature dependence of resistance controlled by gate voltage in LaAlO 3/SrTiO 3 heterointerface electron system. Sci Rep 2022; 12:6458. [PMID: 35440752 PMCID: PMC9019089 DOI: 10.1038/s41598-022-10425-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/04/2021] [Accepted: 04/07/2022] [Indexed: 11/29/2022] Open
Abstract
For two-dimensional electron gas device applications, it is important to understand how electrical-transport properties are controlled by gate voltage. Here, we report gate voltage-controllable hysteresis in the resistance–temperature characteristics of two-dimensional electron gas at LaAlO3/SrTiO3 heterointerface. Electron channels made of the LaAlO3/SrTiO3 heterointerface showed hysteretic resistance–temperature behavior: the measured resistance was significantly higher during upward temperature sweeps in thermal cycling tests. Such hysteretic behavior was observed only after application of positive back-gate voltages below 50 K in the thermal cycle, and the magnitude of hysteresis increased with the applied back-gate voltage. To explain this gate-controlled resistance hysteresis, we propose a mechanism based on electron trapping at impurity sites, in conjunction with the strong temperature-dependent dielectric constant of the SrTiO3 substrate. Our model explains well the observed gate-controlled hysteresis of the resistance–temperature characteristics, and the mechanism should be also applicable to other SrTiO3-based oxide systems, paving the way to applications of oxide heterostructures to electronic devices.
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Affiliation(s)
- Yongsu Kwak
- Korea Research Institute of Standards and Science, Daejeon, 34113, South Korea.,Department of Physics, Chungnam National University, Daejeon, 34134, South Korea
| | - Woojoo Han
- Korea Research Institute of Standards and Science, Daejeon, 34113, South Korea.,Department of Nanoscience, University of Science and Technology, Daejeon, 34113, South Korea
| | - Joon Sung Lee
- Display and Semiconductor Physics, Korea University Sejong Campus, Sejong, 30019, South Korea
| | - Jonghyun Song
- Department of Physics, Chungnam National University, Daejeon, 34134, South Korea. .,Institute of Quantum Systems (IQS), Chungnam National University, Daejeon, 34134, South Korea.
| | - Jinhee Kim
- Korea Research Institute of Standards and Science, Daejeon, 34113, South Korea.
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Gupta A, Silotia H, Kumari A, Dumen M, Goyal S, Tomar R, Wadehra N, Ayyub P, Chakraverty S. KTaO 3 -The New Kid on the Spintronics Block. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106481. [PMID: 34961972 DOI: 10.1002/adma.202106481] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2021] [Revised: 11/16/2021] [Indexed: 06/14/2023]
Abstract
Long after the heady days of high-temperature superconductivity, the oxides came back into the limelight in 2004 with the discovery of the 2D electron gas (2DEG) in SrTiO3 (STO) and several heterostructures based on it. Not only do these materials exhibit interesting physics, but they have also opened up new vistas in oxide electronics and spintronics. However, much of the attention has recently shifted to KTaO3 (KTO), a material with all the "good" properties of STO (simple cubic structure, high mobility, etc.) but with the additional advantage of a much larger spin-orbit coupling. In this state-of-the-art review of the fascinating world of KTO, it is attempted to cover the remarkable progress made, particularly in the last five years. Certain unsolved issues are also indicated, while suggesting future research directions as well as potential applications. The range of physical phenomena associated with the 2DEG trapped at the interfaces of KTO-based heterostructures include spin polarization, superconductivity, quantum oscillations in the magnetoresistance, spin-polarized electron transport, persistent photocurrent, Rashba effect, topological Hall effect, and inverse Edelstein Effect. It is aimed to discuss, on a single platform, the various fabrication techniques, the exciting physical properties and future application possibilities of this family of materials.
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Affiliation(s)
- Anshu Gupta
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
| | - Harsha Silotia
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
| | - Anamika Kumari
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
| | - Manish Dumen
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
| | - Saveena Goyal
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
| | - Ruchi Tomar
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
| | - Neha Wadehra
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
| | - Pushan Ayyub
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India
| | - Suvankar Chakraverty
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
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Molecular Recognition by Silicon Nanowire Field-Effect Transistor and Single-Molecule Force Spectroscopy. MICROMACHINES 2022; 13:mi13010097. [PMID: 35056261 PMCID: PMC8777874 DOI: 10.3390/mi13010097] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/14/2021] [Revised: 12/31/2021] [Accepted: 01/05/2022] [Indexed: 11/16/2022]
Abstract
Silicon nanowire (SiNW) field-effect transistors (FETs) have been developed as very sensitive and label-free biomolecular sensors. The detection principle operating in a SiNW biosensor is indirect. The biomolecules are detected by measuring the changes in the current through the transistor. Those changes are produced by the electrical field created by the biomolecule. Here, we have combined nanolithography, chemical functionalization, electrical measurements and molecular recognition methods to correlate the current measured by the SiNW transistor with the presence of specific molecular recognition events on the surface of the SiNW. Oxidation scanning probe lithography (o-SPL) was applied to fabricate sub-12 nm SiNW field-effect transistors. The devices were applied to detect very small concentrations of proteins (500 pM). Atomic force microscopy (AFM) single-molecule force spectroscopy (SMFS) experiments allowed the identification of the protein adsorption sites on the surface of the nanowire. We detected specific interactions between the biotin-functionalized AFM tip and individual avidin molecules adsorbed to the SiNW. The measurements confirmed that electrical current changes measured by the device were associated with the deposition of avidin molecules.
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Jeong SG, Min T, Woo S, Kim J, Zhang YQ, Cho SW, Son J, Kim YM, Han JH, Park S, Jeong HY, Ohta H, Lee S, Noh TW, Lee J, Choi WS. Phase Instability amid Dimensional Crossover in Artificial Oxide Crystal. PHYSICAL REVIEW LETTERS 2020; 124:026401. [PMID: 32004053 DOI: 10.1103/physrevlett.124.026401] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/29/2019] [Indexed: 06/10/2023]
Abstract
Artificial crystals synthesized by atomic-scale epitaxy provide the ability to control the dimensions of the quantum phases and associated phase transitions via precise thickness modulation. In particular, the reduction in dimensionality via quantized control of atomic layers is a powerful approach to revealing hidden electronic and magnetic phases. Here, we demonstrate a dimensionality-controlled and induced metal-insulator transition (MIT) in atomically designed superlattices by synthesizing a genuine two-dimensional (2D) SrRuO_{3} crystal with highly suppressed charge transfer. The tendency to ferromagnetically align the spins in an SrRuO_{3} layer diminishes in 2D as the interlayer exchange interaction vanishes, accompanying the 2D localization of electrons. Furthermore, electronic and magnetic instabilities in the two SrRuO_{3} unit cell layers induce a thermally driven MIT along with a metamagnetic transition.
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Affiliation(s)
- Seung Gyo Jeong
- Department of Physics, Sungkyunkwan University, Suwon 16419, Korea
| | - Taewon Min
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Sungmin Woo
- Department of Physics, Sungkyunkwan University, Suwon 16419, Korea
| | - Jiwoong Kim
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Yu-Qiao Zhang
- Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0020, Japan
| | - Seong Won Cho
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
| | - Jaeseok Son
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Korea
| | - Young-Min Kim
- Department of Energy Sciences, Sungkyunkwan University, Suwon 16419, Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Suwon 16419, Korea
| | - Jung Hoon Han
- Department of Physics, Sungkyunkwan University, Suwon 16419, Korea
| | - Sungkyun Park
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Hu Young Jeong
- UNIST Central Research Facilities and School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
| | - Hiromichi Ohta
- Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0020, Japan
| | - Suyoun Lee
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea
| | - Tae Won Noh
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Korea
| | - Jaekwang Lee
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Woo Seok Choi
- Department of Physics, Sungkyunkwan University, Suwon 16419, Korea
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Gan Y, Christensen DV, Zhang Y, Zhang H, Krishnan D, Zhong Z, Niu W, Carrad DJ, Norrman K, von Soosten M, Jespersen TS, Shen B, Gauquelin N, Verbeeck J, Sun J, Pryds N, Chen Y. Diluted Oxide Interfaces with Tunable Ground States. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1805970. [PMID: 30637817 DOI: 10.1002/adma.201805970] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2018] [Revised: 12/31/2018] [Indexed: 06/09/2023]
Abstract
The metallic interface between two oxide insulators, such as LaAlO3 /SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial properties such as the ground state and metal-insulator transitions remains challenging. Here, an unforeseen tunability of the phase diagram of LAO/STO is reported by alloying LAO with a ferromagnetic LaMnO3 insulator without forming lattice disorder and at the same time without changing the polarity of the system. By increasing the Mn-doping level, x, of LaAl1- x Mnx O3 /STO (0 ≤ x ≤ 1), the interface undergoes a Lifshitz transition at x = 0.225 across a critical carrier density of nc = 2.8 × 1013 cm-2 , where a peak TSC ≈255 mK of superconducting transition temperature is observed. Moreover, the LaAl1- x Mnx O3 turns ferromagnetic at x ≥ 0.25. Remarkably, at x = 0.3, where the metallic interface is populated by only dxy electrons and just before it becomes insulating, a same device with both signatures of superconductivity and clear anomalous Hall effect (7.6 × 1012 cm-2 < ns ≤ 1.1 × 1013 cm-2 ) is achieved reproducibly. This provides a unique and effective way to tailor oxide interfaces for designing on-demand electronic and spintronic devices.
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Affiliation(s)
- Yulin Gan
- Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark
| | - Dennis Valbjørn Christensen
- Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark
| | - Yu Zhang
- Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark
- National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Hongrui Zhang
- National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Dileep Krishnan
- EMAT, University of Antwerp, Groenenborgerlaan 171, 2020, Antwerp, Belgium
| | - Zhicheng Zhong
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Wei Niu
- Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark
| | - Damon James Carrad
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100, Copenhagen, Denmark
| | - Kion Norrman
- Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark
| | - Merlin von Soosten
- Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100, Copenhagen, Denmark
| | - Thomas Sand Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100, Copenhagen, Denmark
| | - Baogen Shen
- National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Nicolas Gauquelin
- EMAT, University of Antwerp, Groenenborgerlaan 171, 2020, Antwerp, Belgium
| | - Johan Verbeeck
- EMAT, University of Antwerp, Groenenborgerlaan 171, 2020, Antwerp, Belgium
| | - Jirong Sun
- National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Nini Pryds
- Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark
| | - Yunzhong Chen
- Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark
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