Large and Ultrastable All-Inorganic CsPbBr3 Monocrystalline Films: Low-Temperature Growth and Application for High-Performance Photodetectors

Near Room Temperature Solvothermal Growth of Ferroelectric CsPbBr3 Nanoplatelets with Ultralow Dark Current

CsPbBr3 exhibits outstanding optoelectronic properties and thermal stability, making it a coveted material for detectors, light-emitting diodes, and solar cells. Despite observations of ferroelectricity in CsPbBr3 quantum dots, synthesizing bulk ferroelectric CsPbBr3 crystals has remained elusive, hindering its potential in next-generation optoelectronic devices like optical switches and ferroelectric photovoltaics. Here, a breakthrough is reported: a novel solvothermal technique enabling the growth of ferroelectric CsPbBr3 nanoplatelets with lateral dimensions in the tens of micrometers. This represents a significant step toward achieving large-area ferroelectric CsPbBr3 crystals. Unlike traditional methods, this approach allows for growth and crystallization of CsPbBr3 in alcohol solutions by enhancing precursor solubility. This study confirms the ferroelectric nature of these nanoplatelets using second harmonic generation, electrical characterizations, and piezoresponse force microscopy. This work paves the way for utilizing ferroelectric CsPbBr3 in novel optoelectronic devices, significantly expanding the potential of this material and opening doors for further exploration in this exciting field.

Surface Energy-Assisted Patterning of Vapor Deposited All-Inorganic Perovskite Arrays for Wearable Optoelectronics

Solution-based methods for fabricating all-inorganic perovskite film arrays often suffer from limited control over nucleation and crystallization, resulting in poor homogeneity and coverage. To improve film quality, advanced vapor deposition techniques are employed for continuous film. Here, the vapor deposition strategy to the all-inorganic perovskite films array, enabling area-selective deposition of perovskite through substrate modulation is expanded. It can yield a high-quality perovskite film array with different pixel shapes, various perovskite compositions, and a high resolution of 423 dpi. The resulting photodetector arrays exhibit remarkable optoelectronic performance with an on/off ratio of 13 887 and responsivity of 47.5 A W-1. The device also displays long-term stability in a damp condition for up to 12 h. Moreover, a pulse monitoring sensor based on the perovskite films array demonstrates stable monitoring for pulse signals after being worn for 12 h and with a low illumination of 0.055 mW cm-2, highlighting the potential application in wearable optoelectronic devices.

Anisotropy of Anion Diffusion in All-Inorganic Perovskite Single Crystals

Ion diffusion is a fundamentally important process in understanding and manipulating the optoelectronic properties of semiconductors. Most current studies on ionic diffusion have been focusing on perovskite polycrystalline thin films and nanocrystals. However, the random orientation and grain boundaries can heavily interfere with the kinetics of ion diffusion, where the experimental results only reveal the average ion exchange kinetics and the actual ion diffusion mechanisms perpendicular to the direction of individual crystal facets remain unclear. Here, the anion (Cl, I) diffusion anisotropy on (111) and (100) facets of CsPbBr3 single crystals is demonstrated. The as-grown single crystals with (111) and (100) facets exhibit anisotropic growth with different halide incorporation, which lead to different resulting optoelectronic properties. Combined experimental characterizations and theoretical calculations reveal that the (111) CsPbBr3 shows a faster anion diffusion behavior compared with that of the (100) CsPbBr3, with a lower diffusion energy barrier, a larger built-in electric field, and lower inverse defect formation energy. The work highlights the anion diffusion anisotropic mechanisms perpendicular to the direction of individual crystal facets for optimizing and designing perovskite optoelectronic devices.

On-Substrate Fabrication of CsPbBr3 Single-Crystal Microstructures via Nanoparticle Self-Assembly-Assisted Low-Temperature Sintering

The growth of all-inorganic perovskite single-crystal microstructures on substrates is a promising approach for constructing photonic and electronic microdevices. However, current preparation methods typically involve direct control of ions or atoms, which often depends on specific lattice-matched substrates for epitaxial growth and other stringent conditions that limit the mild preparation and flexibility of device integration. Herein, we present the on-substrate fabrication of CsPbBr3 single-crystal microstructures obtained via a nanoparticle self-assembly assisted low-temperature sintering (NSALS) method. Sintering guided by self-assembled atomically oriented superlattice embryos facilitated the formation of single-crystal microstructures under mild conditions without substrate dependence. The as-prepared on-substrate microstructures exhibited a consistent out-of-plane orientation with a carrier lifetime of up to 82.7 ns. Photodetectors fabricated by using these microstructures exhibited an excellent photoresponse of 9.15 A/W, and the dynamic optical response had a relative standard deviation as low as 0.1831%. The discrete photosensor microarray chip with 174000 pixels in a 100 mm2 area showed a response difference of less than 6%. This method of nanoscale particle-controlled single crystal growth on a substrate offers a perspective for mild-condition preparation and in situ repair of crystals of various types. This advancement can propel the flexible integration and widespread application of perovskite devices.

PbS/CsPbBr3 Heterojunction for Broadband Neuromorphic Vision Sensing

Neuromorphic light sensors with analogue-domain image processing capability hold promise for overcoming the energy efficiency limitations and latency of von Neumann architecture-based vision chips. Recently, metal halide perovskites, with strong light-matter interaction, long carrier diffusion length, and exceptional photoelectric conversion efficiencies, exhibit reconfigurable photoresponsivity due to their intrinsic ion migration effect, which is expected to advance the development of visual sensors. However, suffering from a large bandgap, it is challenging to achieve highly tunable responsivity simultaneously with a wide-spectrum response in perovskites, which will significantly enhance the image recognition accuracy through the machine learning algorithm. Herein, we demonstrate a broadband neuromorphic visual sensor from visible (Vis) to near-infrared (NIR) by coupling all-inorganic metal halide perovskites (CsPbBr3) with narrow-bandgap lead sulfide (PbS). The PbS/CsPbBr3 heterostructure is composed of high-quality single crystals of PbS and CsPbBr3. Interestingly, the ion migration of CsPbBr3 with the implementation of an electric field induces the energy band dynamic bending at the interface of the PbS/CsPbBr3 heterojunction, leading to reversible, multilevel, and linearly tunable photoresponsivity. Furthermore, the reconfigurable and broadband photoresponse in the PbS/CsPbBr3 heterojunction allows convolutional neuronal network processing for pattern recognition and edge enhancements from the Vis to the NIR waveband, suggesting the great potential of the PbS/CsPbBr3 heterostructure in artificial intelligent vision sensing.

Recent progress in construction methods and applications of perovskite photodetector arrays

Metal halide perovskites are considered promising materials for next-generation optoelectronic devices due to their excellent optoelectronic performances and simple solution preparation process. Precise micro/nano-scale patterning techniques enable perovskite materials to be used for array integration of photodetectors. In this review, the device types of perovskite-based photodetectors are introduced and the structural characteristics and corresponding device performances are analyzed. Then, the typical construction methods suitable for the fabrication of perovskite photodetector arrays are highlighted, including surface treatment technology, template-assisted construction, inkjet printing technology, and modified photolithography. Furthermore, the current development trends and their applications in image sensing of perovskite photodetector arrays are summarized. Finally, major challenges are presented to guide the development of perovskite photodetector arrays.

Optoelectronic Devices of Large-Scale Transferred All-Inorganic Lead Halide Perovskite Thin Films

We report the large-scale transfer process for monocrystalline CsPbBr₃ thin films prepared by chemical vapor deposition (CVD) with excellent optical properties and stability. The transfer process is robust, simple, and effective, in which CsPbBr₃ thin films could be transferred to several substrates and effectively avoid chemical or physical fabrication processes to damage the perovskite surface. Moreover, the transfer process endows CsPbBr₃ and substrates with atomically clean and electronically flat interfaces. We utilize this transfer process to realize several optoelectronic devices, including a photonic laser with a threshold of 61 μJ/cm², a photodetector with a responsivity of 2.4 A/W, and a transistor with a hole mobility of 11.47 cm² V^-1 s^-1. High device performances mainly originate from low defects of high-quality single-crystal perovskite and seamless contact between CsPbBr₃ and target substrates. The large-scale nondestructive transfer process provides promising opportunities for optoelectronic applications based on monocrystalline perovskites.

Narrow-bandgap Sn-Pb mixed perovskite single crystals for high-performance near-infrared photodetectors

Narrow-bandgap Sn-Pb mixed perovskite single crystals are highly promising as photoactive materials for efficient and low-cost near-infrared (NIR) photodetectors. However, because of the significant difference in the crystallization velocities for Pb- and Sn-based perovskites, Sn-Pb mixed perovskites are peculiarly prone to phase separation during the crystallization process, causing the degradation of the optical and electronic properties of materials. Herein, we propose a low-temperature space-confined technique (LT-SCT) that simultaneously reduces the crystallization velocities of pure Sn and Pb perovskites, enabling the fabrication of pure-phase (FASnI₃)_0.1(MAPbI₃)_0.9 single crystals. The resulting (FASnI₃)_0.1(MAPbI₃)_0.9 single crystals exhibit excellent crystallinity with a high hole mobility of 7.44 × 10³ cm² V^-1 s^-1 and a low surface trap density of 1.88 × 10⁹ cm^-2. These properties benefit the application of (FASnI₃)_0.1(MAPbI₃)_0.9 single crystals in self-powered NIR photodetectors and yield outstanding comprehensive performance, especially with a broad linear dynamic range of up to 163.5 dB, a large responsivity (R) of 0.53 A W^-1, and a fast response speed of 22.78 μs in the NIR spectral region (750-860 nm). Furthermore, high-quality NIR imaging and wearable health monitoring are achieved by employing high-performance and self-driven NIR photodetectors. This work contributes to developing Sn-Pb mixed perovskite single crystals and provides a promising candidate for efficient and low-cost NIR photodetection.

Controlled on-chip fabrication of large-scale perovskite single crystal arrays for high-performance laser and photodetector integration

Metal halide perovskites possess intriguing optoelectronic properties, however, the lack of precise control of on-chip fabrication of the large-scale perovskite single crystal arrays restricts its application in integrated devices. Here, we report a space confinement and antisolvent-assisted crystallization method for the homogeneous perovskite single crystal arrays spanning 100 square centimeter areas. This method enables precise control over the crystal arrays, including different array shapes and resolutions with less than 10%-pixel position variation, tunable pixel dimensions from 2 to 8 μm as well as the in-plane rotation of each pixel. The crystal pixel could serve as a high-quality whispering gallery mode (WGM) microcavity with a quality factor of 2915 and a threshold of 4.14 μJ cm^-2. Through directly on-chip fabrication on the patterned electrodes, a vertical structured photodetector array is demonstrated with stable photoswitching behavior and the capability to image the input patterns, indicating the potential application in the integrated systems of this method.

High-Performance Self-Powered Photodetector Based on the Lateral Photovoltaic Effect of All-Inorganic Perovskite CsPbBr3 Heterojunctions

CsPbBr₃, an inorganic halide perovskite, has attracted great interest in recent years due to its excellent photoelectric properties. In this paper, we report a high-performance position-sensitive detector and laser communication sensor based on a CsPbBr₃/4H-SiC heterojunction that effectively exploits the lateral photovoltaic (LPV) effect. The X-ray diffraction, X-ray photoelectron spectra, and photoluminescence data indicate that a high-quality CsPbBr₃ film has been successfully obtained using pulsed laser deposition. The thickness of the CsPbBr₃ film is shown to play a key role in the open-circuit voltage and linear LPV. A large position sensitivity (up to 827 mV/mm) of the LPV with a fast relaxation time is observed. Moreover, the shortest relaxation time of only 0.34 μs for 532 nm laser irradiation among counterparts is achieved in the detector under consideration. Furthermore, the position sensitivity and relaxation time of the LPV in the CsPbBr₃/4H-SiC heterojunction show a weak dependence on the laser wavelength from 266 to 532 nm. The robust characteristics of fast relaxation time and high position sensitivity of the LPV make the CsPbBr₃ junction a promising candidate for both laser communication sensors and self-powered high-performance position-sensitive detectors.

The Dissociation of Exciton During the Lasing of a Single CsPbBr3 Microplate

In this work, the lasing of a single CsPbBr₃ microplate (MP) fabricated with chemical vapor deposition (CVD) is investigated from the viewpoint of exciton dissociation characterized with steady-state photoluminescence (PL) and time-resolved photoluminescence (TRPL). It is confirmed that the lasing performance is disturbed by the dissociation of excitons. The increase of lasing threshold with temperature originates from the dissociation of free excitons (FEs) to localized carriers (LCs), and the lasing failure is mostly ascribed to the dissociation of FEs to free carriers (FCs). The working temperature of micro/nanolasers based on metal halide perovskites (MHPs) could be raised up to the temperature determined by exciton binding energy while the laser heating effect is dealt with well. These findings advance our understanding on the photophysics of the lasing behaviors of micro/nanocavities based on MHPs and help us promote their performance by having better thermal management.

Excitation-dependent perovskite/polymer films for ultraviolet visualization

Ultraviolet (UV) visualization has extensive applications in military and civil fields such as security monitoring, space communication, and wearable equipment for health monitoring in the internet of things (IoT). Due to their remarkable optoelectronic features, perovskite materials are regarded as promising candidates for UV light detecting and imaging. Herein, we report for the first time the excitation-dependent perovskite/polymer films with dynamically tunable fluorescence ranging from green to magenta by changing the UV excitation from 260 to 380 nm. And they still render dynamic multi-color UV light imaging with different polymer matrixes, halogen ratios, and cations of perovskite materials. The mechanism of its fluorescence change is related to the chloride vacancies in perovskite materials. A patterned multi-color ultraviolet visualization pad is also demonstrated for visible conversion of the UV region. This technique may provide a universal strategy for information securities, UV visualizations, and dynamic multi-color displays in the IoT.

Anion-Exchange Driven Phase Transition in CsPbI3 Nanowires for Fabricating Epitaxial Perovskite Heterojunctions

Anion-exchange in halide perovskites provides a unique pathway of bandgap engineering for fabricating heterojunctions in low-cost photovoltaics and optoelectronics. However, it remains challenging to achieve robust and sharp perovskite heterojunctions, due to the spontaneous anion interdiffusion across the heterojunction in 3D perovskites. Here, it is shown that the anionic behavior in 1D perovskites is fundamentally different, that the anion exchange can readily drive an indirect-to-direct bandgap phase transition in CsPbI₃ nanowires (NWs) and greatly lower the phase transition temperature. In addition, the heterojunction created by phase transition is epitaxial in nature, and its chemical composition can be precisely controlled upon postannealing. Further study of the phase transition dynamics reveals a threshold-dominating anion exchange mechanism in these 1D NWs rather than the gradient-dominating mechanism in 3D systems. The results provide important insights into the ionic behavior in halide perovskites, which is beneficial for applications in solar cells, light-emitting diodes (LEDs), and other semiconductor devices.

The Universal Growth of Ultrathin Perovskite Single Crystals

Perovskites have engaged significant attention owing to rich species and remarkable physical properties as well as optoelectronic applications. Compared to bulk counterparts, ultrathin perovskites exhibit more available compositions due to the breaking of bulk lattice limitation. Coupled with crystal lattice relaxation and quantum confinement, infinite intriguing properties of ultrathin perovskites deserve to be explored. Developing ultrathin perovskites with alterable composition and structure is a necessity to fully explore this versatile family. Herein, a universal strategy is conceived via constructing oriented solvent microenvironment induced by the interfacial electric field originated from the charge separation between solid and liquid phases, which is conducive to controlling the precursor distribution and makes crystals preferentially nucleate and grow in the preferentially lateral mode. From layered to nonlayered, organic to inorganic, and toxic to low-toxic lead-free perovskite, a full-range synthesis is achieved of ultrathin perovskites. This work opens up opportunities both for ultrathin perovskite exploration through compositional engineering and for device miniaturization in energy conversion applications.

In situ construction of a Te/CsPbBr3 heterojunction for self-powered photodetector

In this study, CsPbBr₃ particles were prepared by a simple solvent evaporation method in ambient environment; the p–n heterojunction formed by CsPbBr₃ particles on the surface of a single long Te wire was used to construct a high-performance Te/CsPbBr₃ photodetector. Compared with CsPbBr₃ PDs, the Te/CsPbBr₃ photodetector showed improved photocurrent, and exhibited characteristics of excellent self-powered performance, broad-spectrum response (UV-visible), and ultra-fast response speed (t_rise = 0.09 ms). In addition, under zero bias and upon 540 nm light irradiation, the device had good responsivity (0.35 mA W⁻¹), high photosensitivity (up to 100 on/off ratio), and a detectivity of 1.42 × 10¹⁰ Jones. This study provides insight into the possibility of manufacturing high-performance self-powered photodetectors through a simple in situ construction of heterojunctions.

In this study, CsPbBr₃ particles were prepared by a simple solvent evaporation method in ambient environment; the p–n heterojunction formed by CsPbBr₃ particles on the surface of a single long Te wire was used to construct a high-performance Te/CsPbBr₃ photodetector.

Drastic transitions of excited state and coupling regime in all-inorganic perovskite microcavities characterized by exciton/plasmon hybrid natures

Lead-halide perovskites are highly promising for various optoelectronic applications, including laser devices. However, fundamental photophysics explaining the coherent-light emission from this material system is so intricate and often the subject of debate. Here, we systematically investigate photoluminescence properties of all-inorganic perovskite microcavity at room temperature and discuss the excited state and the light-matter coupling regime depending on excitation density. Angle-resolved photoluminescence clearly exhibits that the microcavity system shows a transition from weak coupling regime to strong coupling regime, revealing the increase in correlated electron-hole pairs. With pumping fluence above the threshold, the photoluminescence signal shows a lasing behavior with bosonic condensation characteristics, accompanied by long-range phase coherence. The excitation density required for the lasing behavior, however, is found to exceed the Mott density, excluding the exciton as the excited state. These results demonstrate that the polaritonic Bardeen-Cooper-Schrieffer state originates the strong coupling formation and the lasing behavior.

Highly Tunable Enhancement and Switching of Nonlinear Emission from All-Inorganic Lead Halide Perovskites via Electric Field

Herein, we demonstrate a highly tunable enhancement and switching of nonlinear emission from all-inorganic metal halide perovskites based on an asymmetrically biased metal-insulator-semiconductor (MIS) structure. We achieve 2 orders of magnitude enhancement of the two-photon-pumped photoluminescence (TPL) from CsPbBr₃ microplates with the MIS structure, due to comprehensive effects including localized field effect, trap-filling effect, and collection enhancement. In particular, taking advantage of electric-field-induced passivation/activation of Br vacancies, we realize highly tunable TPL enhancement, ranging from ∼61.2-fold to ∼370.3-fold. Moreover, we demonstrate an efficient modulation of the two-photon-pumped lasing from the MIS structure, which exhibits electric field induced switching with a high on/off ratio of 67:1. This work has opened new avenues for steering carrier transport and nonlinear emission in lead halide perovskites, which shows great promise for realizing high-efficiency and tunable nonlinear nanophotonic devices.

High-performance perovskite photodetectors based on CsPbBr3 microwire arrays

All inorganic perovskite materials have drawn extensive attention, owing to their outstanding performance, facile solution-processed method, and potential applications in optoelectronic devices. However, uncontrollable morphology, high defect density, and instability of perovskites prepared via solution-processed method are the main challenges for their large-scale production and commercialization. Herein, we prepared large-scale CsPbBr₃ microwire arrays with highly ordered morphology and high crystalline quality by a template-assisted method. The photodetectors based on CsPbBr₃ microwire arrays exhibited remarkable on/off photocurrent ratio of 9.02×10³, high detectivity of 1.59×10¹³ Jones, high responsivity of 4.55 A/W, and fast response speed of 4.9/3 ms. More importantly, the photocurrent of the photodetectors hardly changed in air after being stored for two months, indicating remarkable stability. This study demonstrates that CsPbBr₃ microwire arrays provide the possibility for preparing large-scale and high-performance optoelectronic devices.

Microsteganography on all inorganic perovskite micro-platelets by direct laser writing

Direct laser writing (DLW) is a mask-free and cost-efficient micro-fabrication technology, which has been explored to pattern structures on perovskites. However, there is still a lack of research on DLW methods for microsteganography. Herein, we developed a sophisticated DLW condition to pattern on CsPbBr₃ perovskite micro-platelets (MPs). In addition to the reversible PL quenching caused by photo-induced ion migration, permanent nonradiative centers are also produced by the DLW treatment. Therefore, the patterned information is retained after long-term storage. Meanwhile, the mild DLW condition only results in a faint trace, which is almost invisible under a regular optical microscope. Thus, the patterned information is hidden unless applying an excitation source, which paves the way for applications in microsteganography and anti-counterfeiting. As a proof-of-concept, different patterns are drawn on the CsPbBr₃ MPs by DLW, which are only observable under a fluorescence microscope.

Interfacial-engineering enhanced performance and stability of ZnO nanowire-based perovskite solar cells

Perovskite solar cells (PSCs) have attracted extensive attention due to their convenient fabrication and excellent photoelectric characteristics. The highest power conversion efficiency (PCE) of over 25% has been realized. However, ZnO as electron transport layer based PSCs exhibit inferior PCE and stability because of the mismatched energy-band and undesirable interfacial recombination. Here, we introduce a thin layer of SnO₂nanocrystals to construct an interfacial engineering with gradient energy band and interfacial passivation via a facile wet chemical process at a low temperature. The best PCE obtained in this study reaches 18.36%, and the stability is substantially improved and maintains a PCE of almost 100% over 500 h. The low-temperature fabrication process facilitates the future application of ZnO/SnO₂-based PSCs in flexible and stretchable electronics.

Oriented Halide Perovskite Nanostructures and Thin Films for Optoelectronics

Oriented semiconductor nanostructures and thin films exhibit many advantageous properties, such as directional exciton transport, efficient charge transfer and separation, and optical anisotropy, and hence these nanostructures are highly promising for use in optoelectronics and photonics. The controlled growth of these structures can facilitate device integration to improve optoelectronic performance and benefit in-depth fundamental studies of the physical properties of these materials. Halide perovskites have emerged as a new family of promising and cost-effective semiconductor materials for next-generation high-power conversion efficiency photovoltaics and for versatile high-performance optoelectronics, such as light-emitting diodes, lasers, photodetectors, and high-energy radiation imaging and detectors. In this Review, we summarize the advances in the fabrication of halide perovskite nanostructures and thin films with controlled dimensionality and crystallographic orientation, along with their applications and performance characteristics in optoelectronics. We examine the growth methods, mechanisms, and fabrication strategies for several technologically relevant structures, including nanowires, nanoplates, nanostructure arrays, single-crystal thin films, and highly oriented thin films. We highlight and discuss the advantageous photophysical properties and remarkable performance characteristics of oriented nanostructures and thin films for optoelectronics. Finally, we survey the remaining challenges and provide a perspective regarding the opportunities for further progress in this field.

A novel visible light sensing and recording system enabled by integration of photodetector and electrochromic devices

The integration of multiple electronic or optoelectronic devices is an effective strategy to use their unique functions to realize a specific goal. A state-of-the-art photodetector (PD) array can realize real-time image sensing, but the image information will disappear immediately with the removal of the light stimuli. Here, we design a visible light sensing and recording system by the integration of a perovskite PD array with a tungsten trioxide-based electrochromic device (ECD) array (10 × 10 pixels). The system can convert the received visible light signals into electrical signals to change the storable color of the corresponding pixels in the ECD array, thus realizing optical information recording in the form of the color display. As a conceptual demonstration, the system achieves the recording of the "H"-shaped visible light pattern projected to the active area of the PD array. Besides, after removing the illumination stimuli, the recording of the light pattern continues in the absence of the power supply owing to the "color memory effect". The recorded length can be regulated through the periods of illumination stimulation. The proof-of-concept system may have potential applications in image sensors, electronic eyes, and intelligent electronics.

Crystallization of CsPbBr3 single crystals in water for X-ray detection

Metal halide perovskites have fascinated the research community over the past decade, and demonstrated unprecedented success in optoelectronics. In particular, perovskite single crystals have emerged as promising candidates for ionization radiation detection, due to the excellent opto-electronic properties. However, most of the reported crystals are grown in organic solvents and require high temperature. In this work, we develop a low-temperature crystallization strategy to grow CsPbBr₃ perovskite single crystals in water. Then, we carefully investigate the structure and optoelectronic properties of the crystals obtained, and compare them with CsPbBr₃ crystals grown in dimethyl sulfoxide. Interestingly, the water grown crystals exhibit a distinct crystal habit, superior charge transport properties and better stability in air. We also fabricate X-ray detectors based on the CsPbBr₃ crystals, and systematically characterize their device performance. The crystals grown in water demonstrate great potential for X-ray imaging with enhanced performance metrics.

Perovskite single crystals are commonly grown in organic solvents, which require relatively high temperature condition. Here, the authors develop a low-temperature crystallisation strategy to grow CsPbBr₃ single crystals in water with improved charge transport properties and stability.

High-Quality All-Inorganic Perovskite CsPbBr3 Microsheet Crystals as Low-Loss Subwavelength Exciton-Polariton Waveguides

Nanostructured all-inorganic metal halide perovskites have attracted considerable attention due to their outstanding photonic and optoelectronic properties. Particularly, they can exhibit room-temperature exciton-polaritons (EPs) capable of confining electromagnetic fields down to the subwavelength scale, enabling efficient light harvesting and guiding. However, a real-space nanoimaging study of the EPs in perovskite crystals is still absent. Additionally, few studies focused on the ambient-pressure and reliable fabrication of large-area CsPbBr₃ microsheets. Here, CsPbBr₃ orthorhombic microsheet single crystals were successfully synthesized under ambient pressure. Their EPs were examined using a real-space nanoimaging technique, which reveal EP waveguide modes spanning the visible to near-infrared spectral region. The EPs exhibit a sufficient long propagation length of over 16 μm and a very low propagation loss of less than 0.072 dB·μm^-1. These results demonstrate the potential applications of CsPbBr₃ microsheets as subwavelength waveguides in integrated optics.

Low-temperature architecture of a cubic-phase CsPbBr3 single crystal for ultrasensitive weak-light photodetectors

We present the first report of a water-regulated method for obtaining a cubic-phase CsPbBr3 single crystal that could be frozen at low temperature with a CsBr/PbBr2 ratio of 1 : 1. The cubic CsPbBr3 single-crystal photodetector exhibits a superior responsivity of 278 A W-1, an EQE of 6.63 × 104%, and an ultrahigh detectivity of 4.36 × 1013 Jones under low-power 520 nm irradiation at 3 V.

Enhanced Spatial Light Confinement of All Inorganic Perovskite Photodetectors Based on Hybrid Plasmonic Nanostructures

3D incident light confinement by radical electromagnetic fields offers a facile and novel way to break through the performance limit of inorganic perovskite CsPbBr₃ quantum dots (QDs). Herein, metallic nanoparticles decorated anodic aluminum oxide (AAO) hybrid plasmonic nanostructures with geometric control are first proposed for cyclic light utilization of perovskite photodetectors, enabled by spatially extended light confinement. The drastic multiple interference induced by plasmonic coupling within AAO matrixes are generated as a function of pore sizes, which can effectively collect the transmitted photons back to the surface. In addition, the self-assembled metallic nanoparticles simultaneously concentrate the incident and reflected light beams into the CsPbBr₃ QD layers. The light confinement inherently stems from the metallic nanoparticles due to the variation of the near surface electromagnetic fields. As a result, perovskite photodetectors based on Al nanoparticles/AAO hybrid plasmonic nanostructures with a pore size of 220 nm exhibit enhanced photoresponse behavior with remarkably increased photocurrent by ≈43× and maintain low dark current under 490 nm light illumination at 1 V.

Growth of centimeter-scale perovskite single-crystalline thin film via surface engineering

Modern electronic and photonic devices rely on single-crystalline thin film semiconductors for high performance and reproducibility. The emerging halide perovskites have extraordinary electronic and photonic properties and can be synthesized via low cost solution-based methods. They have been used in a variety of devices with performance approaching or over the devices based on conventional materials. However, their solution based growth method is intrinsically challenge to grow large scale single-crystalline thin film due to the random nucleation and isotropous growth of the crystal. Here, we report the growth of centimeter-scale perovskite single-crystalline thin films by controlling the nucleation density and growth rate of the crystal under a spatially confined growth condition. The hydrophobic treatment on substrates inhibits nucleation and accelerates the growth of single-crystalline thin film, providing enough space for initial nucleus growing up quickly without touching each other. Single-crystalline perovskite thin-film with an aspect ratio of 1000 (1 cm in side length, 10 μm in thickness) has been successfully grown. The low trap density and the high mobility of the as-grown thin film show a high crystallinity. The photodetector based on the perovskite thin film has achieved a gain ~ 104, benefitting from the short transit time of the carries due to the high mobility and thin thickness of the active layer. Our work opens up a new route to grow large scale perovskite single-crystalline thin films, providing a platform to develop high- performance devices.

Nested Inverse Opal Perovskite toward Superior Flexible and Self-Powered Photodetection Performance

Flexible and self-powered perovskite photodetectors have attracted tremendous research interests due to their applications in wearable and portable devices. However, the conventional planar structured photodetectors are always accompanied with limited device performance and undesired mechanical stability. Herein, a nested inverse opal (NIO) structured perovskite photodetector via a facile template-assisted spin-coating method is reported. The coupling effect of enhanced light capture, increased carrier transport, and improved perovskite film quality enables NIO device to exhibit superior photoresponse performance. The NIO photodetector exhibits a high responsivity of 473 mA W^-1 and detectivity up to 1.35 × 10¹³ Jones at 720 nm without external bias. The NIO structure can efficiently release mechanical stress during the bending process and the photocurrent has no degradation even after 500 cycles of bending. Moreover, the unencapsulated NIO device can operate for over 16 d under ambient conditions, presenting a significantly enhanced environmental stability compared to the planar device. This work demonstrates that deliberate structural design is an effective avenue for constructing self-powered, flexible, and stable optoelectronic devices.

Controllable Growth of High-Quality Inorganic Perovskite Microplate Arrays for Functional Optoelectronics

Inorganic perovskite single crystals have emerged as promising vapor-phase processable structures for optoelectronic devices. However, because of material lattice mismatch and uncontrolled nucleation, vapor-phase methods have been restricted to random distribution of single crystals that are difficult to perform for integrated device arrays. Herein, an effective strategy to control the vapor-phase growth of high-quality cesium lead bromide perovskite (CsPbBr₃ ) microplate arrays with uniform morphology as well as controlled location and size is reported. By introducing perovskite seeds on substrates, intractable lattice mismatches and random nucleation barriers are surpassed, and the epitaxial growth of perovskite crystals is accurately controlled. It is further demonstrated that CsPbBr₃ microplate arrays can be monolithically integrated on substrates for the fabrication of high-performance lasers and photodetectors. This strategy provides a facile approach to fabricate high-quality CsPbBr₃ microplates with controllable size and location, which offers new opportunities for the scalable production of integrated optoelectronic devices.

Substantially Improving Device Performance of All-Inorganic Perovskite-Based Phototransistors via Indium Tin Oxide Nanowire Incorporation

All-inorganic halide perovskites (IHPs) have attracted enormous attention due to their intrinsically high optical absorption coefficient and superior ambient stabilities. However, the photosensitivity of IHP-based photodetectors is still restricted by their poor conductivities. Here, a facile design of hybrid phototransistors based on the CsPbBr₃ thin film and indium tin oxide (ITO) nanowires (NWs) integrated into a InGaZnO channel in order to achieve both high photoresponsivity and fast response is reported. The metallic ITO NWs are employed as electron pumps and expressways to efficiently extract photocarriers from CsPbBr₃ and inject electrons into InGaZnO. The obtained device exhibits the outstanding responsivity of 4.9 × 10⁶ A W^-1 , which is about 100-fold better than the previous best results of CsPbBr₃ -based photodetectors, together with the fast response (0.45/0.55 s), long-term stability (200 h in ambient), and excellent mechanical flexibility. By operating the phototransistor in the depletion regime, an ultrahigh specific detectivity up to 7.6 × 10¹³ Jones is achieved. More importantly, the optimized spin-coating manufacturing process is highly beneficial for achieving uniform InGaZnO-ITO/perovskite hybrid films for high-performance flexible detector arrays. All these results can not only indicate the potential of these hybrid phototransistors but also provide a valuable insight into the design of hybrid material systems for high-performance photodetection.

High-Rubidium-Formamidinium-Ratio Perovskites for High-Performance Photodetection with Enhanced Stability

Formamidinium lead trihalide perovskites have emerged as promising photovoltaic materials owing to their superior absorption coefficient properties. However, one big challenge is the material phase stability and thermal stability at high temperature. In this work, a large quantity of rubidium (Rb) ions is incorporated into formamidinium (FA) perovskite thin films to improve the material phase stability and thermal stability. Photodiodes based on optimized FA_0.7Rb_0.3PbI₃ perovskites deliver a high responsivity of 0.43 A W^-1, a detectivity of >10¹² Jones, a relatively large linear dynamic range of 125 dB, and an ultrafast response speed of approximately 300 ns. Moreover, these photodiodes present lower dark current and higher photocurrent after baking at high temperature. These results are very promising for photodetection at high operational temperature. In addition, the high-ratio rubidium-incorporated perovskite films may have great potential in fabricating other high-performance optoelectronic devices, i.e., light-emitting diodes and solar cells with excellent phase stability and high temperature thermostability.

Space-Confined Growth of Individual Wide Bandgap Single Crystal CsPbCl3 Microplatelet for Near-Ultraviolet Photodetection

Perovskite photodetectors (PDs) with tunable detection wavelength have attracted extensive attention due to the potential application in the field of imaging, machine vision, and artificial intelligence. Most of the perovskite PDs focus on I- or Br-based materials due to their easy preparation techniques. However, their main photodetection capacity is situated in the visible region because of their narrower bandgap. Cl-based wide bandgap perovskites, such as CsPbCl₃ , are scarcely reported because of the bad film quality of the spin-coated Cl-based perovskite, due to the poor solubility of the precursor. Therefore, ultraviolet detection using high-quality full inorganic perovskite films, especially with high thermal stability of materials and devices, is still a big challenge. In this work, high-quality single crystal CsPbCl₃ microplatelets (MPs) synthesized by a simple space-confined growth method at low temperature for near-ultraviolet (NUV) PDs are reported. The single CsPbCl₃ MP PDs demonstrate a decent response to NUV light with a high on/off ratio of 5.6 × 10³ and a responsivity of 0.45 A W^-1 at 5 V. In addition, the dark current is as low as pA level, leading to detectivity up to 10¹¹ Jones. Moreover, PDs possess good stability and repeatability.

Millimeter-Sized Single-Crystal CsPbrB3/CuI Heterojunction for High-Performance Self-Powered Photodetector

Millimeter-sized CsPbBr₃ single crystals were prepared via a facile solvent-evaporation method in ambient environment. The heterojunction between p-type CuI and n-type CsPbBr₃ was formed by a simple immersion process. The as-integrated CsPbBr₃/CuI device exhibits a good rectifying behavior (ratio of 250 at ±2 V). In particular, the photodetector shows excellent self-powered characteristics under 540 nm light illumination, including high photocurrent (near 100 nA); high photosensitivity (on/off ratio of 1.5 × 10³); fast response speed (0.04/2.96 ms); and good wavelength selectivity (565-525 nm), responsivity (1.4 mA W^-1), and detectivity (6.2 × 10¹⁰ Jones). This work provides a simple, low-cost, and effective method for preparing millimeter-level CsPbBr₃ single crystals. The simple device architecture further provides a promising approach for fabricating high-performance self-powered photodetectors.

Low-reflection, (110)-orientation-preferred CsPbBr3 nanonet films for application in high-performance perovskite photodetectors

All-inorganic metal halide perovskites have attracted great interest in recent years due to their good device performance with higher thermal stability than that of their organic-inorganic perovskite counterparts. However, the all-inorganic perovskite polycrystalline films prepared by the conventional spin-coating method possess many pinholes, nonuniform surface with many small crystals, and irregular agglomerates, limiting their device performance. Herein, we introduced a monolayer nano-polystyrene (PS) sphere confined growth method for obtaining CsPbBr3 nanonet films (NFs) with ordered nanostructures grown in the preferred (110) orientation, which is beneficial for the charge carrier transport and the light-harvesting efficiency. The (110) peak intensity of CsPbBr3 NFs increased with the increase of the diameter of the monolayer sphere, while the (001) peak intensity was suppressed greatly, indicating the more preferred (110) oriented growth. The PDs based on (110)-orientation-preferred CsPbBr3 NFs prepared by using 850 nm PS spheres showed the best performance. The best performing device displayed the biggest linear dynamic range of up to 120 dB. In addition, a responsivity of 2.84 A W-1 and a detectivity of 5.47 × 1012 Jones were also achieved.

Controllable Growth of Aligned Monocrystalline CsPbBr3 Microwire Arrays for Piezoelectric-Induced Dynamic Modulation of Single-Mode Lasing

CsPbBr₃ shows great potential in laser applications due to its superior optoelectronic characteristics. The growth of CsPbBr₃ wire arrays with well-controlled sizes and locations is beneficial for cost-effective and largely scalable integration into on-chip devices. Besides, dynamic modulation of perovskite lasers is vital for practical applications. Here, monocrystalline CsPbBr₃ microwire (MW) arrays with tunable widths, lengths, and locations are successfully synthesized. These MWs could serve as high-quality whispering-gallery-mode lasers with high quality factors (>1500), low thresholds (<3 µJ cm^-2 ), and long stability (>2 h). An increase of the width results in an increase of the laser quality and the resonant mode number. The dynamic modulation of lasing modes is achieved by a piezoelectric polarization-induced refractive index change. Single-mode lasing can be obtained by applying strain to CsPbBr₃ MWs with widths between 2.3 and 3.5 µm, and the mode positions can be modulated dynamically up to ≈9 nm by changing the applied strain. Piezoelectric-induced dynamic modulation of single-mode lasing is convenient and repeatable. This method opens new horizons in understanding and utilizing the piezoelectric properties of lead halide perovskites in lasing applications and shows potential in other applications, such as on-chip strain sensing.