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Kweon H, Choi KY, Park HW, Lee R, Jeong U, Kim MJ, Hong H, Ha B, Lee S, Kwon JY, Chung KB, Kang MS, Lee H, Kim DH. Silicone engineered anisotropic lithography for ultrahigh-density OLEDs. Nat Commun 2022; 13:6775. [PMID: 36509734 PMCID: PMC9744739 DOI: 10.1038/s41467-022-34531-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/13/2022] [Accepted: 10/27/2022] [Indexed: 12/14/2022] Open
Abstract
Ultrahigh-resolution patterning with high-throughput and high-fidelity is highly in demand for expanding the potential of organic light-emitting diodes (OLEDs) from mobile and TV displays into near-to-eye microdisplays. However, current patterning techniques so far suffer from low resolution, consecutive pattern for RGB pixelation, low pattern fidelity, and throughput issue. Here, we present a silicone engineered anisotropic lithography of the organic light-emitting semiconductor (OLES) that in-situ forms a non-volatile etch-blocking layer during reactive ion etching. This unique feature not only slows the etch rate but also enhances the anisotropy of etch direction, leading to gain delicate control in forming ultrahigh-density multicolor OLES patterns (up to 4500 pixels per inch) through photolithography. This patterning strategy inspired by silicon etching chemistry is expected to provide new insights into ultrahigh-density OLED microdisplays.
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Affiliation(s)
- Hyukmin Kweon
- grid.49606.3d0000 0001 1364 9317Department of Chemical Engineering, Hanyang University, Seoul, 04763 Republic of Korea
| | - Keun-Yeong Choi
- grid.263765.30000 0004 0533 3568School of Information Communication Convergence Technology, Soongsil University, Seoul, 06978 Republic of Korea
| | - Han Wool Park
- grid.49606.3d0000 0001 1364 9317Department of Chemical Engineering, Hanyang University, Seoul, 04763 Republic of Korea
| | - Ryungyu Lee
- grid.263765.30000 0004 0533 3568School of Information Communication Convergence Technology, Soongsil University, Seoul, 06978 Republic of Korea
| | - Ukjin Jeong
- grid.49606.3d0000 0001 1364 9317Department of Chemical Engineering, Hanyang University, Seoul, 04763 Republic of Korea
| | - Min Jung Kim
- grid.255168.d0000 0001 0671 5021Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620 Republic of Korea
| | - Hyunmin Hong
- grid.255168.d0000 0001 0671 5021Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620 Republic of Korea
| | - Borina Ha
- grid.49606.3d0000 0001 1364 9317Department of Chemical Engineering, Hanyang University, Seoul, 04763 Republic of Korea
| | - Sein Lee
- grid.15444.300000 0004 0470 5454School of Integrated Technology, Yonsei University, Incheon, 21983 Republic of Korea
| | - Jang-Yeon Kwon
- grid.15444.300000 0004 0470 5454School of Integrated Technology, Yonsei University, Incheon, 21983 Republic of Korea
| | - Kwun-Bum Chung
- grid.255168.d0000 0001 0671 5021Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620 Republic of Korea
| | - Moon Sung Kang
- grid.263736.50000 0001 0286 5954Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107 Republic of Korea ,grid.263736.50000 0001 0286 5954Institute of Emergent Materials, Sogang University, Seoul, 04107 Republic of Korea
| | - Hojin Lee
- grid.263765.30000 0004 0533 3568School of Information Communication Convergence Technology, Soongsil University, Seoul, 06978 Republic of Korea ,grid.263765.30000 0004 0533 3568School of Electronic Engineering, Soongsil University, Seoul, 06978 Republic of Korea
| | - Do Hwan Kim
- grid.49606.3d0000 0001 1364 9317Department of Chemical Engineering, Hanyang University, Seoul, 04763 Republic of Korea ,grid.49606.3d0000 0001 1364 9317Institute of Nano Science and Technology, Hanyang University, Seoul, 04763 Republic of Korea
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Gao C, Shi D, Li C, Yu X, Zhang X, Liu Z, Zhang G, Zhang D. A Dual Functional Diketopyrrolopyrrole-Based Conjugated Polymer as Single Component Semiconducting Photoresist by Appending Azide Groups in the Side Chains. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2106087. [PMID: 35318828 PMCID: PMC9130897 DOI: 10.1002/advs.202106087] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/24/2022] [Indexed: 06/14/2023]
Abstract
Molecular systems that can function as photoresists are essential for the fabrication of flexible electronics through all-photolithographic processes. Most of the reported molecular systems for photo-patterning of polymeric semiconductors contain binary or multi-components. In comparison, single component semiconducting photoresist is advantageous since it will circumvent the optimization of phase separation and ensure the patterned semiconducting thin films to be more uniform. In this paper, a single component semiconducting photoresist (PDPP4T-N3 ) by incorporating azide groups into the branching alkyl chains of a diketopyrrolopyrrole-based conjugated polymer is reported. The results reveal that i) the azide groups make the side chains to be photo-cross-linkable; ii) uniform patterns with size as small as 5 µm form under mild UV irradiation (365 nm, 85 mW cm-2 ) at ambient conditions; iii) such photo-induced cross-linking does not affect the inter-chain packing; iv) benefiting from the single component feature, field-effect transistors (FETs) with the individual patterned thin films display satisfactorily uniform performances with average charge mobility of 0.61 ± 0.10 cm2 V-1 s-1 and threshold voltage of 3.49 ± 1.43 V. These results offer a simple yet effective design strategy for high-performance single component semiconducting photoresists, which hold great potentials for flexible electronics processed by all-photolithography.
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Affiliation(s)
- Chenying Gao
- Beijing National Laboratory for Molecular SciencesOrganic Solids LaboratoryInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- School of Chemical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
| | - Dandan Shi
- Beijing National Laboratory for Molecular SciencesOrganic Solids LaboratoryInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- School of Chemical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
| | - Cheng Li
- Beijing National Laboratory for Molecular SciencesOrganic Solids LaboratoryInstitute of ChemistryChinese Academy of SciencesBeijing100190China
| | - Xiaobo Yu
- Beijing National Laboratory for Molecular SciencesOrganic Solids LaboratoryInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- School of Chemical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
| | - Xisha Zhang
- Beijing National Laboratory for Molecular SciencesOrganic Solids LaboratoryInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- School of Chemical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
| | - Zitong Liu
- State Key Laboratory of Applied Organic Chemistry (SKLAOC)College of Chemistry and Chemical EngineeringLanzhou UniversityLanzhou730000China
| | - Guanxin Zhang
- Beijing National Laboratory for Molecular SciencesOrganic Solids LaboratoryInstitute of ChemistryChinese Academy of SciencesBeijing100190China
| | - Deqing Zhang
- Beijing National Laboratory for Molecular SciencesOrganic Solids LaboratoryInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- School of Chemical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
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Yao Y, Chen Y, Wang K, Turetta N, Vitale S, Han B, Wang H, Zhang L, Samorì P. A robust vertical nanoscaffold for recyclable, paintable, and flexible light-emitting devices. SCIENCE ADVANCES 2022; 8:eabn2225. [PMID: 35275715 PMCID: PMC8916739 DOI: 10.1126/sciadv.abn2225] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/11/2021] [Accepted: 01/21/2022] [Indexed: 05/31/2023]
Abstract
Organic light-emitting devices are key components for emerging opto- and nanoelectronics applications including health monitoring and smart displays. Here, we report a foldable inverted polymer light-emitting diode (iPLED) based on a self-suspended asymmetrical vertical nanoscaffold replacing the conventional sandwich-like structured LEDs. Our empty vertical-yet-open nanoscaffold exhibits excellent mechanical robustness, proven by unaltered leakage current when applying 1000 cycles of 40-kilopascal pressure loading/unloading, sonication, and folding, with the corresponding iPLEDs displaying a brightness as high as 2300 candela per square meter. By using photolithography and brush painting, arbitrary emitting patterns can be generated via a noninvasive and mask-free process with individual pixel resolution of 10 μm. Our vertical nanoscaffold iPLED can be supported on flexible polyimide foils and be recycled multiple times by washing and refilling with a different conjugated polymer capable of emitting light of different color. This technology combines the traits required for the next generation of high-resolution flexible displays and multifunctional optoelectronics.
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Affiliation(s)
- Yifan Yao
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
| | - Yusheng Chen
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
| | - Kuidong Wang
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
| | - Nicholas Turetta
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
| | - Stefania Vitale
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
| | - Bin Han
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
| | - Hanlin Wang
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
| | - Lei Zhang
- Key Laboratory of Mesoscopic Chemistry of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, Jiangsu 210023, China
| | - Paolo Samorì
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
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Foundry-compatible high-resolution patterning of vertically phase-separated semiconducting films for ultraflexible organic electronics. Nat Commun 2021; 12:4937. [PMID: 34400644 PMCID: PMC8367968 DOI: 10.1038/s41467-021-25059-8] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2021] [Accepted: 07/16/2021] [Indexed: 11/08/2022] Open
Abstract
Solution processability of polymer semiconductors becomes an unfavorable factor during the fabrication of pixelated films since the underlying layer is vulnerable to subsequent solvent exposure. A foundry-compatible patterning process must meet requirements including high-throughput and high-resolution patternability, broad generality, ambient processability, environmentally benign solvents, and, minimal device performance degradation. However, known methodologies can only meet very few of these requirements. Here, a facile photolithographic approach is demonstrated for foundry-compatible high-resolution patterning of known p- and n-type semiconducting polymers. This process involves crosslinking a vertically phase-separated blend of the semiconducting polymer and a UV photocurable additive, and enables ambient processable photopatterning at resolutions as high as 0.5 μm in only three steps with environmentally benign solvents. The patterned semiconducting films can be integrated into thin-film transistors having excellent transport characteristics, low off-currents, and high thermal (up to 175 °C) and chemical (24 h immersion in chloroform) stability. Moreover, these patterned organic structures can also be integrated on 1.5 μm-thick parylene substrates to yield highly flexible (1 mm radius) and mechanically robust (5,000 bending cycles) thin-film transistors. Though shape-changing devices are promising for future haptic displays, existing designs fail to provide smooth surfaces for the user during tactile exploration. Here, the authors utilize flexible auxetic structures to realize shape displays with smooth surfaces and different Gaussian curvatures.
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Chen R, Wang X, Li X, Wang H, He M, Yang L, Guo Q, Zhang S, Zhao Y, Li Y, Liu Y, Wei D. A comprehensive nano-interpenetrating semiconducting photoresist toward all-photolithography organic electronics. SCIENCE ADVANCES 2021; 7:7/25/eabg0659. [PMID: 34144989 PMCID: PMC8213218 DOI: 10.1126/sciadv.abg0659] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/09/2020] [Accepted: 05/07/2021] [Indexed: 05/08/2023]
Abstract
Owing to high resolution, reliability, and industrial compatibility, all-photolithography is a promising strategy for industrial manufacture of organic electronics. However, it receives limited success due to the absence of a semiconducting photoresist with high patterning resolution, mobility, and performance stability against photolithography solution processes. Here, we develop a comprehensive semiconducting photoresist with nano-interpenetrating structure. After photolithography, nanostructured cross-linking networks interpenetrate with continuous phases of semiconducting polymers, enabling submicrometer patterning accuracy and compact molecular stacking with high thermodynamic stability. The mobility reaches the highest values of photocrosslinkable organic semiconductors and maintains almost 100% after soaking in developer and stripper for 1000 min. Owing to the comprehensive performance, all-photolithography is achieved, which fabricates organic inverters and high-density transistor arrays with densities up to 1.1 × 105 units cm-2 and 1 to 4 orders larger than conventional printing processes, opening up a new approach toward manufacturing highly integrated organic circuits and systems.
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Affiliation(s)
- Renzhong Chen
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China
- Institute of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Xuejun Wang
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China
- Institute of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Xin Li
- Corning Incorporated, Corning, NY 14831, USA
| | | | - Mingqian He
- Corning Incorporated, Corning, NY 14831, USA
| | - Longfei Yang
- Institute of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Qianying Guo
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China
- Institute of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Shen Zhang
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China
- Institute of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Yan Zhao
- Institute of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Yang Li
- Corning Incorporated, Corning, NY 14831, USA.
| | - Yunqi Liu
- Institute of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
- Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Dacheng Wei
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.
- Institute of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
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Yao ZF, Wang JY, Pei J. High-performance polymer field-effect transistors: from the perspective of multi-level microstructures. Chem Sci 2020; 12:1193-1205. [PMID: 34163881 PMCID: PMC8179153 DOI: 10.1039/d0sc06497a] [Citation(s) in RCA: 25] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/26/2020] [Accepted: 12/23/2020] [Indexed: 01/13/2023] Open
Abstract
The multi-level microstructure of conjugated polymers is the most critical parameter determining the charge transport property in field-effect transistors (FETs). However, controlling the hierarchical microstructures and the structural evolution remains a significant challenge. In this perspective, we discuss the key aspects of multi-level microstructures of conjugated polymers towards high-performance FETs. We highlight the recent progress in the molecular structures, solution-state aggregation, and polymer crystal structures, representing the multi-level microstructures of conjugated polymers. By tuning polymer hierarchical microstructures, we attempt to provide several guidelines for developing high-performance polymer FETs and polymer electronics.
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Affiliation(s)
- Ze-Fan Yao
- Beijing National Laboratory for Molecular Sciences (BNLMS), Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Center of Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering, Peking University Beijing 100871 China
| | - Jie-Yu Wang
- Beijing National Laboratory for Molecular Sciences (BNLMS), Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Center of Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering, Peking University Beijing 100871 China
| | - Jian Pei
- Beijing National Laboratory for Molecular Sciences (BNLMS), Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Center of Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering, Peking University Beijing 100871 China
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Kim J, Kweon H, Park HW, Go P, Hwang H, Lee J, Choi SJ, Kim DH. Interpenetrating Polymer Semiconductor Nanonetwork Channel for Ultrasensitive, Selective, and Fast Recovered Chemodetection. ACS APPLIED MATERIALS & INTERFACES 2020; 12:55107-55115. [PMID: 33253519 DOI: 10.1021/acsami.0c18549] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Organic semiconductor (OSC)-based gas detection has attracted considerable attention due to the facile manufacturing process and effective contact with target chemicals at room temperature. However, OSCs intrinsically suffer from inferior sensing and recovery capability due to lack of functional sites and deep gas penetration into the film. Here, we describe an interpenetrating polymer semiconductor nanonetwork (IPSN) channel possessing unreacted silanol (Si-OH) groups on its surface to overcome bottlenecks that come from OSC-based chemodetection. On the top of the IPSN, moreover, we introduced electron-donating amine (NH2) groups as a chemical receptor because they strongly interact with the electron-withdrawing nature of NO2 gas. The NH2-IPSN-based field-effect transistor exhibited high-performance chemodetection such as ultrasensitivity (990% ppm-1 at 5 ppm) and excellent NO2 selectivity against other toxic gases. Impressively, the gas recovery was significantly improved because the NH2 chemical receptors anchored on the surface of the IPSN suppress deep gas penetration into the film. This work demonstrates that our NO2 chemodetection is expected to provide inspiration and guideline for realization of practical gas sensors in various industries and daily life.
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Affiliation(s)
- Jaehee Kim
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Hyukmin Kweon
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Han Wool Park
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Pureunsan Go
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Haejung Hwang
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Joonseok Lee
- Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Seon-Jin Choi
- Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Do Hwan Kim
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
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