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Wang S, Han L, Zou Y, Liu B, He ZH, Huang Y, Wang Z, Zheng L, Hu YX, Zhao Q, Sun Y, Li ZQ, Gao P, Chen X, Guo X, Li L, Hu W. Ultrahigh-gain organic transistors based on van der Waals metal-barrier interlayer-semiconductor junction. SCIENCE ADVANCES 2023; 9:eadj4656. [PMID: 38055810 DOI: 10.1126/sciadv.adj4656] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Accepted: 11/06/2023] [Indexed: 12/08/2023]
Abstract
Intrinsic gain is a vital figure of merit in transistors, closely related to signal amplification, operation voltage, power consumption, and circuit simplification. However, organic thin-film transistors (OTFTs) targeted at high gain have suffered from challenges such as narrow subthreshold operating voltage, low-quality interface, and uncontrollable barrier. Here, we report a van der Waals metal-barrier interlayer-semiconductor junction-based OTFT, which shows ultrahigh performance including ultrahigh gain of ~104, low saturation voltage, negligible hysteresis, and good stability. The high-quality van der Waals-contacted junctions are mainly attributed to patterning EGaIn liquid metal electrodes by low-energy microfluidic processes. The wide-bandgap semiconductor Ga2O3 as barrier interlayer is achieved by in situ surface oxidation of EGaIn electrodes, allowing for an adjustable barrier height and expected thermionic emission properties. The organic inverters with a high gain of 5130 and a simplified current stabilizer are further demonstrated, paving a way for high-gain and low-power organic electronics.
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Affiliation(s)
- Shuguang Wang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Lei Han
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Ye Zou
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Bingyao Liu
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Zhi-Hao He
- Department of Physics, Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Tianjin University, Tianjin 300350, China
| | - Yinan Huang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Zhongwu Wang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Lei Zheng
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Yong-Xu Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Qiang Zhao
- College of Science, Civil Aviation University of China (CAUC), Tianjin 300300, China
| | - Yajing Sun
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Zhi-Qing Li
- Department of Physics, Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Tianjin University, Tianjin 300350, China
| | - Peng Gao
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Xiaosong Chen
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Xiaojun Guo
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Liqiang Li
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
- Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, China
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Wang X, Ran Y, Li X, Qin X, Lu W, Zhu Y, Lu G. Bio-inspired artificial synaptic transistors: evolution from innovative basic units to system integration. MATERIALS HORIZONS 2023; 10:3269-3292. [PMID: 37312536 DOI: 10.1039/d3mh00216k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The investigation of transistor-based artificial synapses in bioinspired information processing is undergoing booming exploration, and is the stable building block for brain-like computing. Given that the storage and computing separation architecture of von Neumann construction is not conducive to the current explosive information processing, it is critical to accelerate the connection between hardware systems and software simulations of intelligent synapses. So far, various works based on a transistor-based synaptic system successfully simulated functions similar to biological nerves in the human brain. However, the influence of the semiconductor and the device structural design on synaptic properties is still poorly linked. This review concretely emphasizes the recent advances in the novel structure design of semiconductor materials and devices used in synaptic transistors, not only from a single multifunction synaptic device but also to system application with various connected routes and related working mechanisms. Finally, crises and opportunities in transistor-based synaptic interconnection are discussed and predicted.
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Affiliation(s)
- Xin Wang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Yixin Ran
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Xiaoqian Li
- Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan, Shandong Province, 250100, P. R. China
| | - Xinsu Qin
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Wanlong Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Yuanwei Zhu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Guanghao Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
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Xia J, Qiu X, Liu Y, Chen P, Guo J, Wei H, Ding J, Xie H, Lv Y, Li F, Li W, Liao L, Hu Y. Ferroelectric Wide-Bandgap Metal Halide Perovskite Field-Effect Transistors: Toward Transparent Electronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2300133. [PMID: 36703612 PMCID: PMC10074105 DOI: 10.1002/advs.202300133] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/08/2023] [Indexed: 06/18/2023]
Abstract
Transparent field-effect transistors (FETs) are attacking intensive interest for constructing fancy "invisible" electronic products. Presently, the main technology for realizing transparent FETs is based on metal oxide semiconductors, which have wide-bandgap but generally demand sputtering technique or high-temperature (>350 °C) solution process for fabrication. Herein, a general device fabrication strategy for metal halide perovskite (MHP) FETs is shown, by which transparent perovskite FETs are successfully obtained using low-temperature (<150 °C) solution process. This strategy involves the employment of ferroelectric copolymer poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) as the dielectric, which conquers the challenging issue of gate-electric-field screening effect in MHP FETs. Additionally, an ultra-thin SnO2 is inserted between the source/drain electrodes and MHPs to facilitate electron injection. Consequently, n-type semi-transparent MAPbBr3 FETs and fully transparent MAPbCl3 FETs which can operate well at room temperature with mobility over 10-3 cm2 V-1 s-1 and on/off ratio >103 are achieved for the first time. The low-temperature solution processability of these FETs makes them particularly attractive for applications in low-cost, large-area transparent electronics.
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Affiliation(s)
- Jiangnan Xia
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
- Shenzhen Research Institute of Hunan UniversityShenzhen518063China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan ProvinceCollege of Semiconductors (College of Integrated Circuits)Hunan UniversityChangsha410082China
| | - Xincan Qiu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Yu Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Ping‐An Chen
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Jing Guo
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Huan Wei
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Jiaqi Ding
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Haihong Xie
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Yawei Lv
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Fuxiang Li
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and PerceptionInstitute of OptoelectronicsDepartment of Materials ScienceFudan UniversityShanghai200433China
| | - Lei Liao
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan ProvinceCollege of Semiconductors (College of Integrated Circuits)Hunan UniversityChangsha410082China
| | - Yuanyuan Hu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
- Shenzhen Research Institute of Hunan UniversityShenzhen518063China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan ProvinceCollege of Semiconductors (College of Integrated Circuits)Hunan UniversityChangsha410082China
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Li Z, Chiang T, Kuo P, Tu C, Kuo Y, Liu P. Heterogeneous Integration of Atomically-Thin Indium Tungsten Oxide Transistors for Low-Power 3D Monolithic Complementary Inverter. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2205481. [PMID: 36658711 PMCID: PMC10037976 DOI: 10.1002/advs.202205481] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/21/2022] [Revised: 12/16/2022] [Indexed: 06/17/2023]
Abstract
In this work, the authors demonstrate a novel vertically-stacked thin film transistor (TFT) architecture for heterogeneously complementary inverter applications, composed of p-channel polycrystalline silicon (poly-Si) and n-channel amorphous indium tungsten oxide (a-IWO), with a low footprint than planar structure. The a-IWO TFT with channel thickness of approximately 3-4 atomic layers exhibits high mobility of 24 cm2 V-1 s-1 , near ideally subthreshold swing of 63 mV dec-1 , low leakage current below 10-13 A, high on/off current ratio of larger than 109 , extremely small hysteresis of 0 mV, low contact resistance of 0.44 kΩ-µm, and high stability after encapsulating a passivation layer. The electrical characteristics of n-channel a-IWO TFT are well-matched with p-channel poly-Si TFT for superior complementary metal-oxide-semiconductor technology applications. The inverter can exhibit a high voltage gain of 152 V V-1 at low supply voltage of 1.5 V. The noise margin can be up to 80% of supply voltage and perform the symmetrical window. The pico-watt static power consumption inverter is achieved by the wide energy bandgap of a-IWO channel and atomically-thin channel. The vertically-stacked complementary field-effect transistors (CFET) with high energy-efficiency can increase the circuit density in a chip to conform the development of next-generation semiconductor technology.
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Affiliation(s)
- Zhen‐Hao Li
- Department of Photonics, College of Electrical and Computer EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
| | - Tsung‐Che Chiang
- Department of Photonics, College of Electrical and Computer EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
| | - Po‐Yi Kuo
- Department of Electronic EngineeringNational Chin‐Yi University of TechnologyTaichung411030Taiwan
| | - Chun‐Hao Tu
- Department of Photonics, College of Electrical and Computer EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
| | - Yue Kuo
- Department of Chemical EngineeringTexas A&M UniversityCollege StationTX77843‐3127USA
| | - Po‐Tsun Liu
- Department of Photonics, College of Electrical and Computer EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
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Lee H, Kim YE, Bae J, Jung S, Sporea RA, Kim CH. High-Performance Organic Source-Gated Transistors Enabled by the Indium-Tin Oxide-Diketopyrrolopyrrole Polymer Interface. ACS APPLIED MATERIALS & INTERFACES 2023; 15:10918-10925. [PMID: 36799771 DOI: 10.1021/acsami.2c22350] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Source-gated transistors are a new driver of low-power high-gain thin-film electronics. However, source-gated transistors based on organic semiconductors are not widely investigated yet despite their potential for future display and sensor technologies. We report on the fabrication and modeling of high-performance organic source-gated transistors utilizing a critical junction formed between indium-tin oxide and diketopyrrolopyrrole polymer. This partially blocked hole-injection interface is shown to offer both a sufficient level of drain currents and a strong depletion effect necessary for source pinch-off. As a result, our transistors exhibit a set of outstanding metrics, including an intrinsic gain of 160 V/V, an output resistance of 4.6 GΩ, and a saturation coefficient of 0.2 at an operating voltage of 5 V. Drift-diffusion simulation is employed to reproduce and rationalize the experimental data. The modeling reveals that the effective contact length is significantly reduced in an interdigitated electrode geometry, eventually contributing to the realization of low-voltage saturation.
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Affiliation(s)
- Hyuna Lee
- School of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Yeo Eun Kim
- School of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Jisuk Bae
- School of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Sungyeop Jung
- Advanced Institute of Convergence Technology, Seoul National University, Suwon 16229, Republic of Korea
| | - Radu A Sporea
- Advanced Technology Institute, School of Computer Science and Electronic Engineering, University of Surrey, Guildford GU2 7XH, Surrey, U.K
| | - Chang-Hyun Kim
- School of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
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6
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Recent Advances in Metal−Oxide Thin−Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors and Neuromorphic Applications. COATINGS 2022. [DOI: 10.3390/coatings12020204] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/04/2022]
Abstract
Thin−film transistors using metal oxides have been investigated extensively because of their high transparency, large area, and mass production of metal oxide semiconductors. Compatibility with conventional semiconductor processes, such as photolithography of the metal oxide offers the possibility to develop integrated circuits on a larger scale. In addition, combinations with other materials have enabled the development of sensor applications or neuromorphic devices in recent years. Here, this paper provides a timely overview of metal−oxide−based thin−film transistors focusing on emerging applications, including flexible/stretchable devices, integrated circuits, biosensors, and neuromorphic devices. This overview also revisits recent efforts on metal oxide−based thin−film transistors developed with high compatibility for integration to newly reported applications.
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7
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Dai DSHS, Peng B, Chen M, He Z, Leung TKW, Chik GKK, Fan S, Lu Y, Chan PKL. Organic Field-Effect Transistor Fabricated on Internal Shrinking Substrate. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2106066. [PMID: 34881811 DOI: 10.1002/smll.202106066] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2021] [Revised: 11/10/2021] [Indexed: 06/13/2023]
Abstract
In the development of flexible organic field-effect transistors (OFET), downsizing and reduction of the operating voltage are essential for achieving a high current density with a low operating power. Although the bias voltage of the OFETs can be reduced by a high-k dielectric, achieving a threshold voltage close to zero remains a challenge. Moreover, the scaling down of OFETs demands the use of photolithography, and may lead to compatibility issues in organic semiconductors. Herein, a new strategy based on the ductile properties of organic semiconductors is developed to control the threshold voltage at close to zero while concurrently downsizing the OFETs. The OFETs are fabricated on prestressed polystyrene shrink film substrates at room temperature, then thermal energy (160 °C) is used to release the strain. The OFETs conformally attached to the wrinkled structure are shown to locally amplify the electric field. After shrinking, the horizontal device area is reduced by 75%, and the threshold voltage is decreased from -1.44 to -0.18 V, with a subthreshold swing of 74 mV dec-1 and intrinsic gain of 4.151 × 104 . These results reveal that the shrink film can be generally used as a substrate for downsizing OFETs and improving their performance.
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Affiliation(s)
- Derek Shui Hong Siddhartha Dai
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, China
- Advanced Biomedical Instrumentation Centre, Hong Kong, China
| | - Boyu Peng
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, China
| | - Ming Chen
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, China
| | - Zhenfei He
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, China
| | - Timothy Ka Wai Leung
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, China
| | - Gary Kwok Ki Chik
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, China
- Advanced Biomedical Instrumentation Centre, Hong Kong, China
| | - Sufeng Fan
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Yang Lu
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Paddy K L Chan
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, China
- Advanced Biomedical Instrumentation Centre, Hong Kong, China
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Surekcigil Pesch I, Bestelink E, de Sagazan O, Mehonic A, Sporea RA. Multimodal transistors as ReLU activation functions in physical neural network classifiers. Sci Rep 2022; 12:670. [PMID: 35027631 PMCID: PMC8758690 DOI: 10.1038/s41598-021-04614-9] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/12/2021] [Accepted: 12/28/2021] [Indexed: 12/03/2022] Open
Abstract
Artificial neural networks (ANNs) providing sophisticated, power-efficient classification are finding their way into thin-film electronics. Thin-film technologies require robust, layout-efficient devices with facile manufacturability. Here, we show how the multimodal transistor’s (MMT’s) transfer characteristic, with linear dependence in saturation, replicates the rectified linear unit (ReLU) activation function of convolutional ANNs (CNNs). Using MATLAB, we evaluate CNN performance using systematically distorted ReLU functions, then substitute measured and simulated MMT transfer characteristics as proxies for ReLU. High classification accuracy is maintained, despite large variations in geometrical and electrical parameters, as CNNs use the same activation functions for training and classification.
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Affiliation(s)
- Isin Surekcigil Pesch
- Advanced Technology Institute, Department of Electrical and Electronic Engineering, University of Surrey, Guildford, GU2 7XH, UK
| | - Eva Bestelink
- Advanced Technology Institute, Department of Electrical and Electronic Engineering, University of Surrey, Guildford, GU2 7XH, UK
| | | | - Adnan Mehonic
- Department of Electronic and Electrical Engineering, University College London, London, WC1E 6BT, UK
| | - Radu A Sporea
- Advanced Technology Institute, Department of Electrical and Electronic Engineering, University of Surrey, Guildford, GU2 7XH, UK.
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9
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Wang G, Zhuang X, Huang W, Yu J, Zhang H, Facchetti A, Marks TJ. New Opportunities for High-Performance Source-Gated Transistors Using Unconventional Materials. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2101473. [PMID: 34449126 PMCID: PMC8529450 DOI: 10.1002/advs.202101473] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/12/2021] [Revised: 06/24/2021] [Indexed: 06/13/2023]
Abstract
Source-gated transistors (SGTs), which are typically realized by introducing a source barrier in staggered thin-film transistors (TFTs), exhibit many advantages over conventional TFTs, including ultrahigh gain, lower power consumption, higher bias stress stability, immunity to short-channel effects, and greater tolerance to geometric variations. These properties make SGTs promising candidates for readily fabricated displays, biomedical sensors, and wearable electronics for the Internet of Things, where low power dissipation, high performance, and efficient, low-cost manufacturability are essential. In this review, the general aspects of SGT structure, fabrication, and operation mechanisms are first discussed, followed by a detailed property comparison with conventional TFTs. Next, advances in high-performance SGTs based on silicon are first discussed, followed by recent advances in emerging metal oxides, organic semiconductors, and 2D materials, which are individually discussed, followed by promising applications that can be uniquely realized by SGTs and their circuitry. Lastly, this review concludes with challenges and outlook overview.
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Affiliation(s)
- Gang Wang
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
- Department of Chemistry and the Materials Research CenterNorthwestern University2145 Sheridan RoadEvanstonIL60208USA
| | - Xinming Zhuang
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
- Department of Chemistry and the Materials Research CenterNorthwestern University2145 Sheridan RoadEvanstonIL60208USA
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100P. R. China
| | - Wei Huang
- Department of Chemistry and the Materials Research CenterNorthwestern University2145 Sheridan RoadEvanstonIL60208USA
- School of Automation EngineeringUniversity of Electronic Science and Technology of China (UESTC)ChengduSichuan611731P. R. China
| | - Junsheng Yu
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
| | - Huaiwu Zhang
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research CenterNorthwestern University2145 Sheridan RoadEvanstonIL60208USA
- Flexterra CorporationSkokieIL60077USA
| | - Tobin J. Marks
- Department of Chemistry and the Materials Research CenterNorthwestern University2145 Sheridan RoadEvanstonIL60208USA
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10
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Peng B, Cao K, Lau AHY, Chen M, Lu Y, Chan PKL. Crystallized Monolayer Semiconductor for Ohmic Contact Resistance, High Intrinsic Gain, and High Current Density. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2002281. [PMID: 32666565 DOI: 10.1002/adma.202002281] [Citation(s) in RCA: 32] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2020] [Revised: 06/04/2020] [Indexed: 05/08/2023]
Abstract
The contact resistance limits the downscaling and operating range of organic field-effect transistors (OFETs). Access resistance through multilayers of molecules and the nonideal metal/semiconductor interface are two major bottlenecks preventing the lowering of the contact resistance. In this work, monolayer (1L) organic crystals and nondestructive electrodes are utilized to overcome the abovementioned challenges. High intrinsic mobility of 12.5 cm2 V-1 s-1 and Ohmic contact resistance of 40 Ω cm are achieved. Unlike the thermionic emission in common Schottky contacts, the carriers are predominantly injected by field emission. The 1L-OFETs can operate linearly from VDS = -1 V to VDS as small as -0.1 mV. Thanks to the good pinch-off behavior brought by the monolayer semiconductor, the 1L-OFETs show high intrinsic gain at the saturation regime. At a high bias load, a maximum current density of 4.2 µA µm-1 is achieved by the only molecular layer as the active channel, with a current saturation effect being observed. In addition to the low contact resistance and high-resolution lithography, it is suggested that the thermal management of high-mobility OFETs will be the next major challenge in achieving high-speed densely integrated flexible electronics.
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Affiliation(s)
- Boyu Peng
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong
| | - Ke Cao
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong
| | - Albert Ho Yuen Lau
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong
| | - Ming Chen
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong
| | - Yang Lu
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong
| | - Paddy K L Chan
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong
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