Promising and Eco-Friendly Cu2 X-Based Thermoelectric Materials: Progress and Applications

Progress on Material Design and Device Fabrication via Coupling Photothermal Effect with Thermoelectric Effect

Recovery and utilization of low-grade thermal energy is a topic of universal importance in today's society. Photothermal conversion materials can convert light energy into heat energy, which can now be used in cancer treatment, seawater purification, etc., while thermoelectric materials can convert heat energy into electricity, which can now be used in flexible electronics, localized cooling, and sensors. Photothermoelectrics based on the photothermal effect and the Seebeck effect provide suitable solutions for the development of clean energy and energy harvesting. The aim of this paper is to provide an overview of recent developments in photothermal, thermoelectric, and, most importantly, photothermal-thermoelectric coupling materials. First, the research progress and applications of photothermal and thermoelectric materials are introduced, respectively. After that, the classification of different application areas of materials coupling photothermal effect with thermoelectric effect, such as sensors, thermoelectric batteries, wearable devices, and multi-effect devices, is reviewed. Meanwhile, the potential applications and challenges to be overcome for future development are presented, which are of great reference value in waste heat recovery as well as solar energy resource utilization and are of great significance for the sustainable development of society. Finally, the challenges of photothermoelectric materials as well as their future development are summarized.

The Remarkable Role of Indium in Synergistically Optimizing Carrier Concentration and Phase Distribution of AgCuTe-Based Materials

Carrier regulation has proven to be an effective approach for optimizing the thermoelectric performance of materials. One common method to adjust the carrier concentration is through element doping. In the case of AgCuTe-based materials, it tends to form with cation vacancies, resulting in a high hole concentration and complex phase composition at low temperatures, which also hinders material stability. However, this also offers additional opportunities to manipulate the carrier concentration. In this study, the improved performance of AgCuTe through indium doping is reported, which leads to a reduction in hole concentration. In combination with a significant increase in the effective mass of the carriers, the enhanced Seebeck coefficient is also realized. Particularly, a notable improvement in power factor is observed in the hexagonal phase near room temperature. Furthermore, a lower electron thermal conductivity is achieved, contributing to an average figure of merit value of ≈1.21 (between 523 and 723 K). Additionally, the presence of indium inhibits the formation of the second phase and ensures a homogeneous phase distribution, which reduces the instability arising from phase transition. This work significantly enhances the potential of AgCuTe-based materials for low to medium-temperature applications.

Precise synthesis of copper selenide nanowires with tailored Cu vacancies through photo-induced reduction for thermoelectric applications

Nanostructuring in α-Cu2Se while optimizing carrier concentration holds the promise of realizing further high thermoelectric performance at near room temperature. Nevertheless, controlling the amounts of Cu vacancies, which work as acceptors, in nanostructures is considerably more intricate than in bulk materials. Hence, controlling the amounts of Cu vacancies while maintaining the α-phase and nanostructure shape poses a formidable challenge. In this study, we synthesized Cu2+x Se nanowires (NWs) with various amounts of Cu vacancies at room temperature by the photoreduction method and investigated their thermoelectric properties. Cu2+x Se NWs exhibited a comparable thermoelectric power factor to that of the polycrystalline films fabricated at higher temperature. The achievement of the high power factor despite low-temperature fabrication is attributed to the precise synthesis of Cu2+x Se NWs with various amounts of Cu vacancies. We also investigated the reaction process of Cu2.00Se NWs in detail by observing the reaction intermediates. It was found that photoreduction occurred with Cu2+ ions adsorbed on Se NWs, leading to the reaction of Cu2+ ions and Se NWs without Cu deficiency. Namely, this photoreduction under the adsorbed conditions realized the control of Cu vacancies in Cu2+x Se NWs.

Ion transport induced room-temperature insulator-metal transition in single-crystalline Cu2Se

Cu2Se is a superionic conductor above 414 K, with ionic conductivities reaching that of molten salts. The superionic behavior results from hopping Cu ions between different crystallographic sites within the Se scaffold. However, the properties of Cu2Se below 414 K are far less known due to experimental limitations imposed by the bulk or polycrystalline samples that have been available so far. Here, we report the synthesis of ultra-thin, large-area single crystalline Cu2Se samples using a chemical vapor deposition method. The as-synthesized Cu2Se crystals exhibit optically and electrically detectable and controllable robust phases at room temperature and above. We demonstrate that Cu ion vacancies can be manipulated to induce an insulator-metal transition, which exhibits 6 orders of magnitude change in the electrical resistance of two terminal devices, accompanied by an optical change in the phase configuration. Our experiments show that the high mobility of the liquid-like Cu ion vacancies in Cu2Se causes macroscopic ordering in the Cu vacancies. Consequently, phase distribution over the crystals is not dictated by the diffusive motion of the ions but by the local energy minima formed due to the phase transition. As a result, long-range vacancy ordering of the crystal below 414 K becomes optically observable at a micrometer scale. This work demonstrates that Cu2Se could be a prototypical system where long-range ordering properties can be studied via electrical and optical methods.

Hidden structures: a driving factor to achieve low thermal conductivity and high thermoelectric performance

The long-range periodic atomic arrangement or the lack thereof in solids typically dictates the magnitude and temperature dependence of their lattice thermal conductivity (κlat). Compared to crystalline materials, glasses exhibit a much-suppressed κlat across all temperatures as the phonon mean free path reaches parity with the interatomic distances therein. While the occurrence of such glass-like thermal transport in crystalline solids captivates the scientific community with its fundamental inquiry, it also holds the potential for profoundly impacting the field of thermoelectric energy conversion. Therefore, efficient manipulation of thermal transport and comprehension of the microscopic mechanisms dictating phonon scattering in crystalline solids are paramount. As quantized lattice vibrations (i.e., phonons) drive κlat, atomistic insights into the chemical bonding characteristics are crucial to have informed knowledge about their origins. Recently, it has been observed that within the highly symmetric 'averaged' crystal structures, often there are hidden locally asymmetric atomic motifs (within a few Å), which exert far-reaching influence on phonon transport. Phenomena such as local atomic off-centering, atomic rattling or tunneling, liquid-like atomic motion, site splitting, local ordering, etc., which arise within a few Å scales, are generally found to drastically disrupt the passage of heat carrying phonons. Despite their profound implication(s) for phonon dynamics, they are often overlooked by traditional crystallographic techniques. In this review, we provide a brief overview of the fundamental aspects of heat transport and explore the status quo of innately low thermally conductive crystalline solids, wherein the phonon dynamics is majorly governed by local structural phenomena. We also discuss advanced techniques capable of characterizing the crystal structure at the sub-atomic level. Subsequently, we delve into the emergent new ideas with examples linked to local crystal structure and lattice dynamics. While discussing the implications of the local structure for thermal conductivity, we provide the state-of-the-art examples of high-performance thermoelectric materials. Finally, we offer our viewpoint on the experimental and theoretical challenges, potential new paths, and the integration of novel strategies with material synthesis to achieve low κlat and realize high thermoelectric performance in crystalline solids via local structure designing.

Silver Copper Chalcogenide Thermoelectrics: Advance, Controversy, and Perspective

Thermoelectric technology, which enables a direct and pollution-free conversion of heat into electricity, provides a promising path to address the current global energy crisis. Among the broad range of thermoelectric materials, silver copper chalcogenides (AgCuQ, Q = S, Se, Te) have garnered significant attention in thermoelectric community in light of inherently ultralow lattice thermal conductivity, controllable electronic transport properties, excellent thermoelectric performance across various temperature ranges, and a degree of ductility. This review epitomizes the recent progress in AgCuQ-based thermoelectric materials, from the optimization of thermoelectric performance to the rational design of devices, encompassing the fundamental understanding of crystal structures, electronic band structures, mechanical properties, and quasi-liquid behaviors. The correlation between chemical composition, mechanical properties, and thermoelectric performance in this material system is also highlighted. Finally, several key issues and prospects are proposed for further optimizing AgCuQ-based thermoelectric materials.

Powering the future: Exploring self-charging cardiac implantable electronic devices and the Qi revolution

The incidence and prevalence of cardiovascular diseases (CVD) have risen over the last few decades worldwide, resulting in a cost burden to healthcare systems and increasingly complex procedures. Among many strategies for treating heart diseases, treating arrhythmias using cardiac implantable electronic devices (CIEDs) has been shown to improve quality of life and reduce the incidence of sudden cardiac death. The battery-powered CIEDs have the inherent challenge of regular battery replacements depending upon energy usage for their programmed tasks. Nanogenerator-based  energy harvesters have been extensively studied, developed, and optimized continuously in recent years to overcome this challenge owing to their merits of self-powering abilities and good biocompatibility. Although these nanogenerators and others currently used in energy harvesters, such as biofuel cells (BFCs) exhibit an infinite spectrum of uses for this novel technology, their demerits should not be dismissed. Despite the emergence of Qi wireless power transfer (WPT) has revolutionized the technological world, its application in CIEDs has yet to be studied well. This review outlines the working principles and applications of currently employed energy harvesters to provide a preliminary exploration of CIEDs based on Qi WPT, which may be a promising technology for the next generation of functionalized CIEDs.

Advances in Nanoparticle-Enhanced Thermoelectric Materials from Synthesis to Energy Harvesting: A Review

This comprehensive review analysis examines the domain of composite thermoelectric materials that integrate nanoparticles, providing a critical assessment of their methods for improving thermoelectric properties and the procedures used for their fabrication. This study examines several approaches to enhance power factor and lattice thermal conductivity, emphasizing the influence of secondary phases and structural alterations. This study investigates the impact of synthesis methods on the electrical characteristics of materials, with a particular focus on novel techniques such as electrodeposition onto carbon nanotubes. The acquired insights provide useful guidance for the creation of new thermoelectric materials. The review also compares and contrasts organic and inorganic thermoelectric materials, with a particular focus on the potential of inorganic materials in the context of waste heat recovery and power production within industries. This analysis highlights the role of inorganic materials in improving energy efficiency and promoting environmental sustainability.

Micromechanism for Copper-Deficiency Enhanced Stability: A Quasi In Situ TEM Study of Electric-Induced Structural Evolution in Cu2-x(S, Se) Liquid-Like Thermoelectric Materials

Cu-based liquid-like thermoelectric materials have garnered tremendous attention due to their inherent ultralow lattice thermal conductivity. However, their practical application is hampered by stability issues under a large current or temperature gradient. It has been reported that introduction of copper vacancies can enhance the chemical stability, whereas the micromechanism behind this macroscopic improvement still remains unknown. Here, we have established a quasi in situ TEM method to examine and compare the structural evolution of Cu2-xS0.2Se0.8 (x = 0, 0.05) under external electric fields. It is then found that the preset Cu vacancies could favor the electric-induced formation of a more stable intermediate phase, i.e., the hexagonal CuSe-type structure in the form of either lamellar defects (majorly) or long-range order (minorly), in which ordering of S and Se also occurred. Thereby, copper and chalcogen atoms could largely be solidified into the matrix, and the elemental deposition and evaporation process is mitigated under an electric field.

Inverse-Perovskite Ba3 BO (B = Si and Ge) as a High Performance Environmentally Benign Thermoelectric Material with Low Lattice Thermal Conductivity

High energy-conversion efficiency (ZT) of thermoelectric materials has been achieved in heavy metal chalcogenides, but the use of toxic Pb or Te is an obstacle for wide applications of thermoelectricity. Here, high ZT is demonstrated in toxic-element free Ba3 BO (B = Si and Ge) with inverse-perovskite structure. The negatively charged B ion contributes to hole transport with long carrier life time, and their highly dispersive bands with multiple valley degeneracy realize both high p-type electronic conductivity and high Seebeck coefficient, resulting in high power factor (PF). In addition, extremely low lattice thermal conductivities (κlat ) 1.0-0.4 W m-1  K-1 at T = 300-600 K are observed in Ba3 BO. Highly distorted O-Ba6 octahedral framework with weak ionic bonds between Ba with large mass and O provides low phonon velocities and strong phonon scattering in Ba3 BO. As a consequence of high PF and low κlat , Ba3 SiO (Ba3 GeO) exhibits rather high ZT = 0.16-0.84 (0.35-0.65) at T = 300-623 K (300-523 K). Finally, based on first-principles carrier and phonon transport calculations, maximum ZT is predicted to be 2.14 for Ba3 SiO and 1.21 for Ba3 GeO at T = 600 K by optimizing hole concentration. Present results propose that inverse-perovskites would be a new platform of environmentally-benign high-ZT thermoelectric materials.

Aqueous-Solution Synthesized p-Type Cu2Se0.96Te0.04-xIx/Cu2O Composite and Thermoelectric Performance of TEG Made of 6 Pairs of p-Leg Cu2Se0.96Te0.02I0.02/Cu2O Composite and n-Leg InSb0.94Bi0.06

Cu2Se-based thermoelectric materials exhibit high dimensionless figure of merit (zT) values at elevated temperatures (900-1000 K) but relatively lower zT values at intermediate temperatures, approximately 500 K. We synthesized a series of polycrystalline Cu2Se0.96Te0.04-xIx/Cu2O composites (where x = 0.00, 0.01, 0.02, and 0.03) using an energy-efficient synthesis method conducted at room temperature, followed by heat treatment at 923 K for 6 h. X-ray diffraction (XRD) analysis confirmed the monoclinic crystal structure of the α phase. The introduction of iodine doping at Te sites introduced electron carriers to p-type Cu2Se0.96Te0.04, reducing the hole carrier concentration. Consequently, the electrical resistivity increased, and the thermopower exhibited a significant increase. The incorporation of electron carriers into the p-type Cu2Se0.96Te0.04/Cu2O composites resulted in an enhanced power factor within the medium-temperature range. Specifically, at 500 K, the Cu2Se0.96Te0.02I0.02/Cu2O (x = 0.02) composites demonstrated the highest power factor among the series of Cu2Se0.96Te0.04-xIx/Cu2O composites, measuring 9.1 μW cm-1 K-2. According to the weighted mobility analysis, it is clear that the x = 0.02 composite possesses the optimal carrier concentration, which accounts for its superior power factor compared to the other composites in the series. Furthermore, the Cu2Se0.96Te0.02I0.02/Cu2O composites and Cu2Se0.96Te0.04/Cu2O composites displayed zT values of 0.49 and 0.33, respectively, at 550 K. Additionally, iodine doping led to an enhancement in the average zT values between 450 and 550 K. Therefore, electron doping in p-type materials presents itself as a viable strategy for shifting the operating temperature of a thermoelectric device from high to medium temperature. We successfully fabricated a thermoelectric generator comprising 6 pairs of p-leg Cu2Se0.96Te0.02I0.02/Cu2O composites and n-leg InSb0.94Bi0.06. This TEG achieved impressive results, including a maximum output voltage, power output, power density, and efficiency of 0.115 V, 10.6 μW, 35.1 μW cm-2, and 1.74% at a temperature difference (ΔT) of 120 K.

Four-phonon scattering of so-As and improvement of the thermoelectric properties by increasing the buckling height

In recent years, more and more thermoelectric (TE) materials have been discovered as the research boom of TE materials advances. However, due to the low conversion efficiency, most of the current TE materials cannot meet the commercial demand. The low-dimensional nanomaterials are promising to break the current status quo of low conversion efficiency of TE materials. Here, we predicted a stable two-dimensional TE material, namely so-As, based on density functional theory. The so-As has an ultra-low lattice thermal conductivity,κl= 1.829 W m-1K-1at 300 K, and when the temperature rises to 700 K theκlis only 0.788 W m-1K-1. This might be caused by the strong anharmonic interaction among the so-As phonon and the out-of-plane vibration of the low-frequency acoustic modes. Moreover, the maximumZTvalue of thep-type so-As is 0.18 at room temperature (0.45 at 700 K), while that of then-type can even reach 0.75 at 700 K. In addition, we have also studied the difference between the four- and three-phonon scattering rates. The increase of scattering channels leads to the ultra-lowκl, which is only 3.33 × 10-4W m-1K-1at room temperature, showing an almost adiabatic property. Finally, we adjust the TE properties of so-As by changing the buckling height. With the buckling height is increased by 2%, the scattering rate of so-As is extremely high. WhenTis 700 K, the maximumZTof then-type is 0.94 (p-type can also reach 0.7), which is 25% higher than the pristine one. Our work reveals the impact of buckling height on the TE figure of merit, which provides a direction for future search and regulation of the highZTTE materials.

Extremely Low Lattice Thermal Conductivity and Significantly Enhanced Near-Room-Temperature Thermoelectric Performance in α-Cu2Se through the Incorporation of Porous Carbon

In this work, a series of Cu2Se/x wt % porous carbon (PC) (x = 0, 0.2, 0.4, 0.6, 0.8, 1) composite materials were synthesized by ball milling and spark plasma sintering (SPS). The highly ordered porous carbon was synthesized by a hydrothermal method using mesoporous silica (SBA-15) as the template. X-ray diffraction results show that the incorporation of porous carbon induces a phase transition of Cu2Se from the β phase to the α phase. Meanwhile, the addition of porous carbon reduces the carrier concentration from 2.7 × 1021 to 2.45 × 1020 cm-3 by 1 order of magnitude. The decrease of the carrier concentration leads to the reduction of electrical conductivity and the increase of the Seebeck coefficient, which results in the enhancement of the power factor. On the other hand, the incorporation of porous carbon into Cu2Se increases the porosity of the composites and also introduces more interfaces between the two materials, which is evidenced by positron annihilation lifetime measurements. Both pores and interfaces greatly enhance phonon scattering, leading to extremely low lattice thermal conductivity. In addition, the decrease of electrical conductivity also causes a sufficient reduction in electronic thermal conductivity. Due to the above synergistic effects, the thermoelectric performance of the Cu2Se/PC composite is significantly enhanced with a maximum ZT value of 0.92 at 403 K in the Cu2Se/1 wt % PC composite, which is close to that of the Bi2Te3-based materials. Our work shows that α-Cu2Se has great potential for near-room-temperature thermoelectric materials.

Recent Progress on Phase Engineering of Nanomaterials

As a key structural parameter, phase depicts the arrangement of atoms in materials. Normally, a nanomaterial exists in its thermodynamically stable crystal phase. With the development of nanotechnology, nanomaterials with unconventional crystal phases, which rarely exist in their bulk counterparts, or amorphous phase have been prepared using carefully controlled reaction conditions. Together these methods are beginning to enable phase engineering of nanomaterials (PEN), i.e., the synthesis of nanomaterials with unconventional phases and the transformation between different phases, to obtain desired properties and functions. This Review summarizes the research progress in the field of PEN. First, we present representative strategies for the direct synthesis of unconventional phases and modulation of phase transformation in diverse kinds of nanomaterials. We cover the synthesis of nanomaterials ranging from metal nanostructures such as Au, Ag, Cu, Pd, and Ru, and their alloys; metal oxides, borides, and carbides; to transition metal dichalcogenides (TMDs) and 2D layered materials. We review synthesis and growth methods ranging from wet-chemical reduction and seed-mediated epitaxial growth to chemical vapor deposition (CVD), high pressure phase transformation, and electron and ion-beam irradiation. After that, we summarize the significant influence of phase on the various properties of unconventional-phase nanomaterials. We also discuss the potential applications of the developed unconventional-phase nanomaterials in different areas including catalysis, electrochemical energy storage (batteries and supercapacitors), solar cells, optoelectronics, and sensing. Finally, we discuss existing challenges and future research directions in PEN.

First-principle study of the electronic structure of layered Cu2Se

Copper selenide (Cu2Se) has attracted significant attention due to the extensive applications in thermoelectric and optoelectronic devices over the last few decades. Among various phase structures of Cu2Se, layered Cu2Se exhibits unique properties, such as purely thermal phase transition, high carrier mobility, high optical absorbance and high photoconductivity. Herein, we carry out a systematic investigation for the electronic structures of layered Cu2Se with several exchange-correlation functionals at different levels through first-principle calculations. It can be found that the electronic structures of layered Cu2Se are highly sensitive to the choice of functionals, and the correction of on-site Coulomb interaction also has a noticeable influence. Comparing with the results calculated with hybrid functional and G0W0method, it is found that the electronic structures calculated with LDA +Ufunctional are relatively accurate for layered Cu2Se. In addition, the in-plane biaxial strain can lead to the transition of electronic properties from metal to semiconductor in the layered Cu2Se, attributed to the change of atomic orbital hybridization. Furthermore, we explore the spin-orbit coupling (SOC) effect of Cu2Se and find that the weak SOC effect on electronic structures mainly results from spatial inversion symmetry of Cu2Se. These findings provide valuable insights for further investigation on this compound.

Tunable Intrinsic Phonon Mode versus Anomalous Thermal Transport in Two-Dimensional Strongly Anharmonic Group IB Chalcogenides A2IBSe1/2Te1/2 (AIB = Cu, Ag, or Au)

Group IB chalcogenides, as promising thermoelectric materials, have ultralow thermal transport. Here, we propose a peculiar intrinsic B2 phonon mode that includes the in-plane rotational and stretching vibrations of metal atoms in two-dimensional A2IBSe1/2Te1/2 (AIB = Cu, Ag, or Au). The B2 mode is sensitive to the metal-atom mass, temperature, and strain for effectively tuning the lattice thermal conductivity. The in-plane stretching vibration leads to an unexpected increase in the lattice thermal conductivity from Cu to Ag and to Au systems, in contrast to Keyes' theory. The s(I) phase can be stabilized by the temperature-hardened B2 mode to reduce the lattice thermal conductivity, following the ∼T-0.59 instead of the traditional ∼T-1 trend. The s(II)-to-s(I) phase transition is driven by the strain-softened B2 mode to greatly enhance thermal transport via weakening the anharmonicity. Our work establishes the relationship of tunable intrinsic phonon mode versus thermal transport in two-dimensional group IB chalcogenides.

Significantly improved thermoelectric performance of SnSe originating from collaborative adjustment between valence and conduction bands, mass fluctuations, and local strain

In this study, environmentally friendly, low cost, and easy to synthesize InSn and VSn co-doped SnSe materials was designed and prepared via vacuum melting and spark plasma sintering technology, which avoids the shortcomings of high-performance Pb, Ge, and Na-doped SnSe samples. InSn and VSn, doping achieved appropriate bandgap (Eg) and energy band degeneracy (NV) from the valence and conduction band, obtaining the highest electrical conductivity of 4726 S m-1 at 773 K. The impurity state controls the carrier transport process below 573 K, while Eg and NV control the process above 573 K. InSn and VSn doping induces quality fluctuation and local strain, which decreases the lattice thermal conductivity. Owing to the higher power factor and low lattice thermal conductivity, the ZT value of the Sn0.985In0.01Se sample was 1.3 at 773 K. Dual regulation of the valence and conduction band provides a new idea for adjusting the transport behavior of semiconductors.

Enhanced Thermoelectric Performance and Low Thermal Conductivity in Cu2GeTe3 with Identified Localized Symmetry Breakdown

Highly efficient and eco-friendly thermoelectric generators rely on low-cost and nontoxic semiconductors with high symmetry and ultralow lattice thermal conductivity κ_L. We report the rational synthesis of the novel cubic (Ag, Se)-doped Cu₂GeTe₃ semiconductors. A localized symmetry breakdown (LSB) was found in the composition of Cu_1.9Ag_0.1GeTe_1.5Se_1.5 (i.e., CAGTS15) with an ultralow κ_L of 0.37 W/mK at 723 K, the lowest value outperforming all Cu₂GeCh₃ (Ch = S, Se, and Te). A joint investigation of synchrotron X-ray techniques identifies the LSB embedded into the cubic CAGTS15 host matrix. This LSB is an Ångström-scale orthorhombic symmetry unit, characteristic of multiple bond lengths, large anisotropic atomic displacements, and distinct local chemical coordination of anions. Computational results highlight that such an unusual orthorhombic symmetry demonstrates low-frequency phonon modes, which become softer and more predominant with increasing temperatures. This unconventional LSB promotes bond complexity and phonon scattering, highly beneficial for extraordinarily low lattice thermal conductivity.

Compositing effects for high thermoelectric performance of Cu2Se-based materials

Thermoelectric materials can realize direct conversion between heat and electricity, showing excellent potential for waste heat recovery. Cu₂Se is a typical superionic conductor thermoelectric material having extraordinary ZT values, but its superionic feature causes poor service stability and low mobility. Here, we reported a fast preparation method of self-propagating high-temperature synthesis to realize in situ compositing of BiCuSeO and Cu₂Se to optimize the service stability. Additionally, using the interface design by introducing graphene in these composites, the carrier mobility could be obviously enhanced, and the strong phonon scatterings could lead to lower lattice thermal conductivity. Ultimately, the Cu₂Se-BiCuSeO-graphene composites presented excellent thermoelectric properties with a ZT_max value of ~2.82 at 1000 K and a ZT_ave value of ~1.73 from 473 K to 1000 K. This work provides a facile and effective strategy to largely improve the performance of Cu₂Se-based thermoelectric materials, which could be further adopted in other thermoelectric systems.

Thermoelectric transport properties of metal phosphide XLiP (X = Sr,Ba)

Metal phosphides are stable and have excellent electrical characteristics, their high thermal conductivity has prevented them from being used as thermoelectric materials. In this paper, the thermoelectric transport properties of XLiP (X = Sr Ba) are investigated on the basis of first-principles calculations, Boltzmann transport equation and self-consistent phonon theory. In addition, we also consider the effect of quartic anharmonicity on the thermal transport properties and lattice dynamics of SrLiP and BaLiP. The strong anharmonicity of the two compounds make the lattice thermal conductivity decrease rapidly with the increase of temperature. At 300 K, the lattice thermal conductivity of SrLiP and BaLiP on thea(b)-axis is only 2.98 and 2.93 Wm^-1K^-1, respectively. Due to its excellent electron transport properties, it has greater conductivity in thea(b) axis. Finally, due to the energy pocket and anisotropy at the bottom of the conduction band, the n-type maximum ZT values of trapped SrLiP and BaLiP on thea(b) axis are 0.87 and 0.94 at 900 K, respectively. The high thermoelectric performance of both compounds encourages further studies on the thermoelectric properties of metal phosphides.

Ba3.5Cu7.55In1.15Se9: A Wide-Bandgap Copper Indium Selenide Reveals Strong Luminescence and Third-Harmonic Generation

A new copper indium selenide, Ba_3.5Cu_7.55In_1.15Se₉, was synthesized by the KBr flux reaction at 800 °C. The compound crystallizes with orthorhombic Pnma, a = 46.1700(12) Å, b = 4.26710(10) Å, c = 19.8125(5) Å, and Z = 8. The structural framework mainly consists of four sites of cubane-type defective M₄Se₃ (M = Cu, Cu/In) units with disordered Cu⁺/In³⁺ ions present at the part corner of each unit. The single crystal emits intense photoluminescence at 657 nm with a relative quantum yield (RQY) 0.2 times that of rhodamine 6G powder. The compound belongs to a direct band gap at 1.91 eV, analyzed by Tauc's plot, and the energy is close to the PL position. The Hall effect measurement on a pressed pellet reveals an n-type conductivity with a carrier concentration of 3.358 × 10¹⁷ cm^-3 and a mobility of 24.331 cm² V^-1 s^-1. Furthermore, the compound produces a strong nonlinear third-harmonic generation (THG), with an χ_S⁽³⁾ value of 1.3 × 10⁵ pm²/V² comparable to 1.6 × 10⁵ pm²/V² for AgGaSe₂ measured at 800 nm.

Enhanced Anharmonicity by Forming Low-Symmetry Off-Center Phase: The Case of Two-Dimensional Group-IB Chalcogenides

Enhanced anharmonicity is required to achieve many interesting phenomena in thermoelectricity, superconductivity, ferroelectricity, etc. Here, we propose a novel mechanism for enhancing anharmonicity by forming the low-symmetry off-center ground state, such as the s(II) phase, in two-dimensional A^IB₂X chalcogenides (A^IB = Cu, Ag and Au; X = S, Se, and Te). In this system, the in-plane rotational phonon mode introduces a much stronger anharmonicity in the distorted s(II) phase than in the nondistorted s(I) phase. We show that the stabilities of the s(I) and s(II) phases arise from the ionicity and the ionic size; for example, the low ionicity and the small ionic size favor the s(II) phase. We further demonstrate that the anharmonicity can be tuned by controlling the strain-induced s(II)-to-s(I) phase transition, which explains the anomalous lattice thermal conductivity. Our work relates anharmonicity to symmetry-breaking structural distortion and widens the ways to design excellent thermoelectric materials.

Fine-Tuning Bi2Te3-Copper Selenide Alloys Enables an Efficient n-Type Thermoelectric Conversion

Bismuth tellurides is one of the most promising thermoelectric (TE) material candidates in low-temperature application circumstances, but the n-type thermoelectric property is relatively low compared to the p-type counterpart and still needs to be improved. Herein, we incorporated different copper selenides (CuSe, Cu₃Se₂ and Cu_2-xSe) into a Bi₂Te₃ matrix to create the alloy by grinding and successive sintering to enable higher thermoelectric performance. The results demonstrated that all alloys achieved n-type TE characteristics and Bi₂Te₃-CuSe exhibited the best Seebeck coefficient and power factor among them. Along with the low thermal conductivity, the maximum dimensionless TE figure of merit (ZT) value of 1.64 at 573 K was delivered for Bi₂Te₃-CuSe alloy, which is among the best reported results in the n-type Bi₂Te₃-based TE materials to the best of our knowledge. The improved TE properties should be related to the co-doping process of Se and Cu. Our investigation shows a new method to enhance the performance of n-type TE materials by appropriate co-doping or alloying.

Tailoring the phase transition of silver selenide at the atomistic scale

Thermoelectric materials provide promising solutions for energy harvesting from the environment. Silver selenide (Ag₂Se) material attracts much attention due to its excellent thermoelectric properties under superionic phase transition. However, the optimal thermoelectric figure of merit occurs during the phase transition at high temperatures, making low-temperature devices unable to benefit from their best thermoelectric performance. Here, we tailored the phase transition process of Ag₂Se materials with various sizes, and probed the phase transition temperature by in situ transmission electron microscopy. By tuning the motion of the atoms near the surface using size-dependent surface energy, the phase transition-induced process is tailored towards low temperatures. This work paves the way for future phase transition engineering to enhance thermoelectric performance.

Synergistically Optimized Carrier and Phonon Transport Properties in Bi-Cu2S Coalloyed GeTe

GeTe is an emerging lead-free thermoelectric material, but its excessive carrier concentration and high thermal conductivity severely restrict the enhancement of thermoelectric properties. In this study, the synergistically optimized thermoelectric properties of p-type GeTe through Bi-Cu₂S coalloying are reported. It can be found that the donor behavior of Bi and the substitution-interstitial defect pairs of Cu⁺ ions effectively reduce the hole concentration to an optimal level with carrier mobility less affected. At the same time, Bi-Cu₂S coalloying induces many phonon scattering centers involving stacking faults, nanoprecipitations, grain boundaries and tetrahedral dislocations and suppresses the lattice thermal conductivity to 0.64 W m^-1 K^-1. Consequently, all effects synergistically yield a peak ZT of 1.9 at 770 K with a theoretical conversion efficiency of 14.5% (300-770 K) in the (Ge_0.94Bi_0.06Te)_0.988(Cu₂S)_0.012 sample, which is very promising for mid-low temperature range waste heat harvest.

Accurate in situ measurements of thermoelectric transport properties at high pressure and high temperature

Regulating electron structure and electron-phonon coupling by means of pressure and temperature is an effective way to optimize thermoelectric properties. However, in situ testing of thermoelectric transport performance under pressure and temperature is hindered by technical constraints that obscure the intrinsic effects of pressure and temperature on thermoelectric properties. In the present study, a new reliable assembly was developed for testing the in situ thermoelectric transport performance of materials at high pressure and high temperature (HPHT). This reduces the influence of thermal effects on the test results and improves the success rate of in situ experiments at HPHT. The Seebeck coefficient and electrical resistivity of α-Cu₂Se were measured under HPHT, and the former was found to increase with increasing pressure and temperature; for the latter, although an increase in the pressure acted to lower the electrical resistivity, an increase in the temperature acted to increase it. On increasing pressure from 0.8 to 3 GPa at 333 K, the optimal power factor of α-Cu₂Se was increased by ∼76% from 2.36 × 10^-4-4.15 × 10^-4 W m^-1 K^-2, and the higher pressure meant that α-Cu₂Se had its maximum power factor at lower temperature. The present work is particularly important for understanding the thermoelectric mechanism under HPHT.

Controlling the Thermal Stability, Threshold Voltage, and Thermoelectric Properties of Cuprous Sulfide Thermoelectrics

Cu-ion liquid-like copper sulfide materials have excellent thermoelectric properties, while their applications are limited by their high-temperature decomposition and electric field-driven Cu precipitation issues. In particular, high thermoelectric properties and electric field-driven degradation are difficult to reconcile because liquid-like Cu ions are dominant in low κ and high ZT, while they cause electric field-driven degradation. Here, we control the sintering current and duration time to remove the Cu_1.8S phase, thereby inhibiting the thermal decomposition of the copper sulfide samples, and introduce the Fe element into the sample matrix to improve its resistance to electric field-driven degradation. We reveal that the kinetic process of Cu_1.8S phase decomposition can be suppressed by increasing the relative density of the sample or covering a layer of dense coating/film on the surface of the sample. However, as long as the Cu_1.8S phase is present in the sample, it cannot maintain thermal stability above 450 °C. Furthermore, we find that the Fe element forms a nanogrid spinodal decomposition structure in the sample matrix, which acts as a barrier wall to prevent the long-range diffusion of liquid-like Cu ions and inhibit the electric field-driven degradation. The freely movable liquid-like Cu ions in the grid maintain a strong scattering of phonons in a short range, so the sample possesses low κ and high ZT. Then, a strategy to unify the high thermal decomposition temperature, high threshold voltage, and high thermoelectric performance of copper sulfide thermoelectric materials is proposed: transforming the Cu_1.8S phase and introducing a liquid-like Cu ion migration barrier.

Effective Mass for Holes in Paramagnetic, Plasmonic Cu5FeS4 Semiconductor Nanocrystals

The impact of a magneto-structural phase transition on the carrier effective mass in Cu5FeS4 plasmonic semiconductor nanocrystals was examined using Magnetic Circular Dichroism (MCD). Through MCD, the sample was confirmed as p-type from variable temperature studies from 1.8 - 75 K. Magnetic field dependent behavior is observed, showing an asymptotic behavior at high field with an m ∗ value 5.98 m ∗ ∕ m e at 10 T and 2.73 m ∗ ∕ m e at 2 T. Experimentally obtained results are holistically compared to SQUID magnetization data and DFT results, highlighting a dependency on vacancy driven polaronic coupling, magnetocrystalline anisotropy, and plasmon coupling of the magnetic field all contributing to an overall decrease in the hole mean free path dependent on the magnetic field applied to Cu5FeS4.

Insights into Low Thermal Conductivity in Inorganic Materials for Thermoelectrics

Efficient manipulation of thermal conductivity and fundamental understanding of the microscopic mechanisms of phonon scattering in crystalline solids are crucial to achieve high thermoelectric performance. Thermoelectric energy conversion directly and reversibly converts between heat and electricity and is a promising renewable technology to generate electricity by recovering waste heat and improve solid-state refrigeration. However, a unique challenge in thermal transport needs to be addressed to achieve high thermoelectric performance: the requirement of crystalline materials with ultralow lattice thermal conductivity (κ_L). A plethora of strategies have been developed to lower κ_L in crystalline solids by means of nanostructural modifications, introduction of intrinsic or extrinsic phonon scattering centers with tailored shape and dimension, and manipulation of defects and disorder. Recently, intrinsic local lattice distortion and lattice anharmonicity originating from various mechanisms such as rattling, bonding heterogeneity, and ferroelectric instability have found popularity. In this Perspective, we outline the role of manipulation of chemical bonding and structural chemistry on thermal transport in various high-performance thermoelectric materials. We first briefly outline the fundamental aspects of κ_L and discuss the current status of the popular phonon scattering mechanisms in brief. Then we discuss emerging new ideas with examples of crystal structure and lattice dynamics in exemplary materials. Finally, we present an outlook for focus areas of experimental and theoretical challenges, possible new directions, and integrations of novel techniques to achieve low κ_L in order to realize high-performance thermoelectric materials.

Ag9GaSe6: high-pressure-induced Ag migration causes thermoelectric performance irreproducibility and elimination of such instability

The argyrodite Ag₉GaSe₆ is a newly recognized high-efficiency thermoelectric material with an ultralow thermal conductivity; however, liquid-like Ag atoms are believed to cause poor stability and performance irreproducibility, which was evidenced even after the 1^st measurement run. Herein, we demonstrate the abovementioned instability and irreproducibility are caused by standard thermoelectric sample hot-pressing procedure, during which high pressure promotes the 3-fold-coordinated Ag atoms migrate to 4-fold-coordinated sites with higher-chemical potentials. Such instability can be eliminated by a simple annealing treatment, driving the metastable Ag atoms back to the original sites with lower-chemical potentials as revealed by the valence band X-ray photoelectron chemical potential spectra and single crystal X-ray diffraction data. Furthermore, the hot-pressed-annealed samples exhibit great stability and TE property repeatability. Such a stability and repeatability has never been reported before. This discovery will give liquid-like materials great application potential.

The Ag₉GaSe₆ is a high-efficient thermoelectric material yet suffers instability. Here, the authors demonstrate the instability is caused by the pressure-induced liquid-like Ag migration, which can be eliminated by a simple annealing treatment.

Electrically Tunable Antiferroelectric to Paraelectric Switching in a Semiconductor

The monoclinic α-Cu₂Se phase is the first multipolar antiferroelectric semiconductor identified recently by electron microscopy. As a semiconductor, although there are no delocalized electrons to form a static macroscopic polarization, a spontaneous and localized antiferroelectric polarization was found along multiple directions. In conventional ferroelectrics, the polarity can be switched by an applied electric field, and a ferroelectric to paraelectric transition can be modulated by temperature. Here, we show that a reversible and robust antiferroelectric to paraelectric switching in a Cu₂Se semiconductor can be tuned electrically by low-voltage and high-frequency electric pulses, and the structural transformations are imaged directly by transmission electron microscopy (TEM). The atomic mechanism of the transformation was assigned to an electrically triggered cation rearrangement with a low-energy barrier. Due to differences of the antiferroelectric and paraelectric phases regarding their electrical, mechanical, and optical properties, such an electrically tunable transformation has a great potential in various applications in microelectronics.

Sustainability and Circular Economy Perspectives of Materials for Thermoelectric Modules

The growing demand for energy and the environmental problems derived from this problem are arousing interest throughout the world in the development of clean and efficient alternative energy sources, which involve ecological processes and materials. The materials used in the processes associated with thermoelectric generation technology will provide solutions to this situation. Materials related to energy make it possible to generate energy from waste heat residues, which are derived from various industrial processes in which significant fractions of residual energy are deposited into the environment. However, despite the fact that thermoelectric technology represents some relative advantages in relation to other energy generation processes, it in turn faces some technical limitations such as its low efficiency with respect to the high costs that its implementation demands today, and this has been the subject of intense research in recent years. On the other hand, the sustainability of the processes when analyzed from a circular economy perspective must be taken into account for the implementation of this technology, particularly when considering its large-scale implementation. In this article, a systematic search focused on the sustainability of thermoelectric modules is carried out as a step towards a circular economy model. The review aims to examine recent developments and trends in the development of thermoelectric systems in order to promote initiatives in favor of the environment. The aim of this study is to present a current overview, including trends and limitations, in research related to thermoelectric materials. As a result of this analysis, it was found that aspects related to costs and initiatives related to circular economy models have been little explored, which represents not only an opportunity for the development of new approaches in the conception of thermoelectric systems, but also for the conception of optimized designs that address the current limitations of this technology.

Robust Tunable Large-Gap Quantum Spin Hall States in Monolayer Cu2S on Insulating Substrates

Quantum spin Hall (QSH) insulators with large band gaps and dissipationless edge states are of both technological and scientific interest. Although numerous two-dimensional (2D) systems have been predicted to host the QSH phase, very few of them harbor large band gaps and retain their nontrivial band topology when they are deposited on substrates. Here, based on a first-principles analysis with hybrid functional calculations, we investigated the electronic and topological properties of inversion-asymmetric monolayer copper sulfide (Cu₂S). Interestingly, we found that monolayer Cu₂S possesses an intrinsic QSH phase, Rashba spin splitting, and a large band gap of 220 meV that is suitable for room-temperature applications. Most importantly, we constructed heterostructures of a Cu₂S film on PtTe₂, h-BN, and Cu(111) substrates and found that the topological properties remain preserved upon an interface with these substrates. Our findings suggest Cu₂S as a possible platform to realize inversion-asymmetric QSH insulators with potential applications in low-dissipation electronic devices.

Compression Induced Deformation Twinning Evolution in Liquid-Like Cu2Se

For practical applications of copper selenide (Cu₂Se) thermoelectric (TE) materials with liquid-like behavior, it is essential to determine the structure-property relations as a function of temperature. Here, we investigate β-Cu₂Se structure evolution during uniaxial compression over the temperature range of 400-1000 K using molecular dynamics simulations. We find that at temperatures above 800 K, Cu₂Se exhibits poor stability with breaking order that is described as a liquid-like or hybrid structure comprising a rigid Se sublattice and mobile Cu ions. A uniaxial load causes accumulated structural heterogeneity that is alleviated by diffusion-induced accommodation of local deformations. With increasing strain, the deformation mode changes into a combination of compression and shear, accompanied by restructuring in terms of twinning. Interestingly, in addition to a plastic behavior rarely found in inorganic semiconductors, we find that higher temperature promotes deformation twinning in liquid-like Cu₂Se, showing the role of thermal instability, including Cu diffusion, in structural adaptation and mechanical modulation. These findings reveal the micromechanism of hybrid structural evolution as well as performance tuning through twinning, which provides a theoretical guide toward advanced Cu₂Se TE materials design.

Enhanced Thermoelectric Properties of Cu2SnSe3-Based Materials with Ag2Se Addition

In this work, (Ag, In)-co-doped Cu₂SnSe₃-based compounds are prepared using a self-propagating high-temperature synthesis process. Ag₂Se and as-synthesized (Ag, In)-co-doped Cu₂SnSe₃-based powders are mixed in a proportion according to the formula of Cu_1.85Ag_0.15Sn_0.91In_0.09Se₃/x Ag₂Se (x = 0, 3, 4, and 5%), which is followed by a subsequent plasma-activated sintering (PAS) to obtain consolidated composite bulks. A sandwich experiment is designed to reveal the evolution of the microstructure and phase composition of the composite samples during the PAS process. We investigate the reaction mechanism between Ag₂Se and Cu₂SnSe₃-based matrix as well as the influence of Ag₂Se on the phase composition, microstructure, and thermoelectric transport properties of the composites. Ag₂Se addition is proven to be effective to improve Ag solubility in the Cu_1.85Ag_0.15Sn_0.91In_0.09Se₃ matrix and introduce a CuSe secondary phase and an Ag-rich phase at grain boundaries. The electrical conductivity of Cu_1.85Ag_0.15Sn_0.91In_0.09Se₃/x Ag₂Se (x = 0, 3, 4, and 5%) composites decreases while the Seebeck coefficient increases with increasing Ag₂Se addition, resulting in an optimized power factor. Moreover, benefiting from the collective phonon scattering at various defects induced by Ag₂Se addition, the composite samples exhibit significantly suppressed lattice thermal conductivity, which reaches as low as 0.11 W m^-1 K^-1 at 700 K for the x = 5% sample. A peak figure-of-merit (ZT) of 1.26 at 750 K and an average ZT of 0.75 at 300-800 K are obtained for Cu_1.85Ag_0.15Sn_0.91In_0.09Se₃/5% Ag₂Se. This work provides an efficient way to improve average ZT values of Cu₂SnSe₃-based compounds for promising power generation at intermediate temperatures.

Enhanced thermoelectric performance of In-doped and AgCuTe-alloyed SnTe through band engineering and endotaxial nanostructures

AgCuTe alloying introduces endotaxial nanostructures in SnTe, which significantly decrease thermal conductivity and enhance ZT.

Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys via Introducing Cu2Te Nanocrystals and Resonant Level Doping

The binary compound of GeTe emerging as a potential medium-temperature thermoelectric material has drawn a great deal of attention. Here, we achieve ultralow lattice thermal conductivity and high thermoelectric performance in In and a heavy content of Cu codoped GeTe thermoelectrics. In dopants improve the density of state near the surface of Femi of GeTe by introducing resonant levels, producing a sharp increase of the Seebeck coefficient. In and Cu codoping not only optimizes carrier concentration but also substantially increases carrier mobility to a high value of 87 cm² V^-1 s^-1 due to the diminution of Ge vacancies. The enhanced Seebeck coefficient coupled with dramatically enhanced carrier mobility results in significant enhancement of PF in Ge_1.04-x-yIn_xCu_yTe series. Moreover, we introduce Cu₂Te nanocrystals' secondary phase into GeTe by alloying a heavy content of Cu. Cu₂Te nanocrystals and a high density of dislocations cause strong phonon scattering, significantly diminishing lattice thermal conductivity. The lattice thermal conductivity reduced as low as 0.31 W m^-1 K^-1 at 823 K, which is not only lower than the amorphous limit of GeTe but also competitive with those of thermoelectric materials with strong lattice anharmonicity or complex crystal structures. Consequently, a high ZT of 2.0 was achieved for Ge_0.9In_0.015Cu_0.125Te by decoupling electron and phonon transport of GeTe. This work highlights the importance of phonon engineering in advancing high-performance GeTe thermoelectrics.

Thermoelectric performance of ZrNX (X = Cl, Br and I) monolayers

A low thermal conductivity and a high power factor are essential for efficient thermoelectric materials. The lattice thermal conductivity can be reduced by reducing the dimensions of the materials, thus improving the thermoelectric performance. In this work, the electronic, carrier and phonon transport and the thermoelectric properties of ZrNX (X = Cl, Br, and I) monolayers were investigated using density functional theory and Boltzmann transport theory. The electronic and phonon transport show anisotropic properties. The thermal conductivities are 20.8, 14.6 and 12.4 W m^-1 K^-1 at room temperature along the y-direction for the ZrNCl, ZrNBr, and ZrNI monolayers, respectively. Combining the low lattice thermal conductivity and the high power factor results in an excellent thermoelectric performance of the ZrNX monolayers. The thermoelectric figure of merit of ZrNX monolayers can reach magnitudes of ∼0.49-3.15 by optimal hole and electron concentrations between 300 and 700 K. ZrNX monolayers with high ZT values for n- and p-type materials would thus be novel, promising candidate 2D thermoelectric materials for heat-electricity conversion.

Synergetic Optimization of Electrical and Thermal Transport Properties by Cu Vacancies and Nanopores in Cu2Se

In this study, a series of Cu_2+x-yIn_ySe (-0.3 ≤ x ≤ 0.2 and 0 ≤ y ≤ 0.05) samples were prepared by melting and the spark plasma sintering method. X-ray diffraction measurements indicate that the Cu-deficient samples (x = -0.3 y = 0 and x = -0.2 y = 0) prefer to form the cubic phase (β-Cu₂Se). Adding excessive Cu or introducing In atoms into the Cu₂Se matrix triggers a phase transition from the β to α phase. Positron lifetime measurements confirm the reduction in Cu vacancy concentration by adding excessive Cu or introducing In atoms into Cu₂Se, which causes a dramatic decrease in carrier concentration from 1.59 × 10²¹ to 5.0 × 10¹⁹ cm^-3 at room temperature. The samples with In contents of 0.01 and 0.03 show a high power factor of about 1 mW m^-1 K^-2 at room temperature due to the optimization of the carrier concentration. Meanwhile, the excess Cu content and doping of In atoms also favor the formation of nanopores. These pores have strong interaction with phonons, leading to remarkable reduction in lattice thermal conductivity. Finally, a high ZT value of about 1.44 is achieved at 873 K in the Cu_1.99In_0.01Se (x = 0 and y = 0.01) sample, which is about twice that of the Cu-deficient sample (Cu_1.7Se). Our work provides a viable insight into tuning vacancy defects to improve efficiently the electrical and thermal transport performance for copper-based thermoelectric materials.

Electroresistance in multipolar antiferroelectric Cu2Se semiconductor

Electric field-induced changes in the electrical resistance of a material are considered essential and enabling processes for future efficient large-scale computations. However, the underlying physical mechanisms of electroresistance are currently remain largely unknown. Herein, an electrically reversible resistance change has been observed in the thermoelectric α-Cu2Se. The spontaneous electric dipoles formed by Cu+ ions displaced from their positions at the centers of Se-tetrahedrons in the ordered α-Cu2Se phase are examined, and α-Cu2Se phase is identified to be a multipolar antiferroelectric semiconductor. When exposed to the applied voltage, a reversible switching of crystalline domains aligned parallel to the polar axis results in an observed reversible resistance change. The study expands on opportunities for semiconductors with localized polar symmetry as the hardware basis for future computational architectures.

Extremely Fast and Cheap Densification of Cu2S by Induction Melting Method

The aim of this work was to obtain dense Cu₂S superionic thermoelectric materials, homogeneous in terms of phase and chemical composition, using a very fast and cheap induction-melting technique. The chemical composition was investigated via scanning electron microscopy (SEM) combined with an energy-dispersive spectroscopy (EDS) method, and the phase composition was established by X-ray diffraction (XRD). The thermoelectric figure of merit ZT was determined on the basis of thermoelectric transport properties, i.e., Seebeck coefficient, electrical and thermal conductivity in the temperature range of 300–923 K. The obtained values of the ZT parameter are comparable with those obtained using the induction hot pressing (IHP) technique and about 30–45% higher in the temperature range of 773–923 K in comparison with Cu₂S samples densified with the spark plasma sintering (SPS) technique.

Zn-Induced Defect Complexity for the High Thermoelectric Performance of n-Type PbTe Compounds

Although defect engineering is the core strategy to improve thermoelectric properties, there are limited methods to effectively modulate the designed defects. Herein, we demonstrate that a high ZT value of 1.36 at 775 K and a high average ZT value of 0.99 in the temperature range from 300 to 825 K are realized in Zn-containing PbTe by designing complex defects. By combining first-principles calculations and experiments, we show that Zn atoms occupy both Pb sites and interstitial sites in PbTe and couple with each other. The contraction stress induced via substitutional Zn on Pb sites alleviates the swelling stress by Zn atoms occupying the interstitial sites and promotes the solubility of interstitial Zn atoms in the structure of PbTe. The stabilization of Zn impurity as a complex defect extends the region of PbTe phase stability toward Pb_0.995Zn_0.02Te, while the solid solution region in the other direction of the ternary phase diagram is much smaller. The evolution of defects in PbTe was further explicitly corroborated by aberration-corrected scanning transmission electron microscopy (Cs-corrected STEM) and positron annihilation measurement. The Zn atoms compensate the Pb vacancies (V_Pb) and Zn interstitials (Zn_i) significantly improve the electron concentration, producing a high carrier mobility of 1467.7 cm² V^-1 s^-1 for the Pb_0.995Zn_0.02Te sample. A high power factor of 4.11 mW m^-1 K^-2 is achieved for the Pb_0.995Zn_0.02Te sample at 306 K. This work provides new insights into understanding the nature and evolution of the defects in n-type PbTe as well as improving the electronic and thermal transport properties toward higher thermoelectric performance.

Phase Tuning for Enhancing the Thermoelectric Performance of Solution-Synthesized Cu2-xS

Cu₂S, consisting of Earth-abundant and eco-friendly elements, is a promising candidate for thermoelectric energy conversion. The stoichiometric Cu₂S has intrinsically low thermal conductivity together with meagre electrical conductivity. Herein, in order to improve the electrical properties, we develop a facile solvothermal method for synthesizing a series of Cu_2-xS with tunable phase compositions. With reduction in the CuCl/Na₂S molar ratio in the solution precursors from 2:1 to 1.75:1, the solvothermal products transform from single-phase Cu₂S into Cu₂S-Cu_1.96S composites, which are preserved in the hot-pressed pellets. The decreased CuCl/Na₂S molar ratio results in increased room-temperature Hall carrier concentration, leading to enhanced electrical conductivity. Specifically, the pellet corresponding to the 1.75:1 CuCl/Na₂S precursor ratio obtains a power factor of 8.04 μW cm^-1 K^-2 at 815 K, which is ∼735% of the value obtained by stoichiometric Cu₂S. Along with the moderate thermal conductivity, this sample achieves an enhanced zT value of 0.87 at 815 K, representing a ∼250% increase when compared to stoichiometric Cu₂S. This study demonstrates an effective strategy in enhancing the thermoelectric performance of solution-synthesized Cu₂S-based materials by phase tuning.

Enhanced Stability and Thermoelectric Performance in Cu1.85Se-Based Compounds

Liquid-like copper selenium compounds have attracted considerable interest in recent years for their excellent thermoelectric performance, abundant element reserves, and low toxicity. However, the related applications are still limited due to the phase transition and precipitation of Cu under an external field. Here, the cubic Cu_1.85Se-based compounds with suppressed phase transition and improved critical voltage (V_c) are first studied. In particular, Li/Bi co-doping effectively optimizes hole concentration and the ZTs are substantially improved from 0.2 in Cu_1.85Se to 0.7 in Li_0.03Cu_1.81Bi_0.04Se at 760 K. Meanwhile, the latter shows an outstanding V_c above 0.22 V at 750 K, which is the highest value in Cu_2-xSe thermoelectric compounds to date. Moreover, S is alloyed in Li_0.03Cu_1.81Bi_0.04Se to greatly reduce the thermal conductivity and the ZT is further enhanced to 0.9 for Li_0.03Cu_1.81Bi_0.04Se_0.9S_0.1 at 760 K. Our work sheds light on a new strategy to realize good stability and enhanced thermoelectric performance, which provides a new direction for further research.

Facile synthesis of copper selenides with different stoichiometric compositions and their thermoelectric performance at a low temperature range

Copper selenide is widely considered to be a promising candidate for high-performance flexible thermoelectrics; however, most of the reported ZT values of copper selenides are unsatisfactory at a relatively low temperature range. Herein, we utilized some wet chemical methods to synthesize a series of copper selenides. XRD, SEM and TEM characterizations revealed that CuSe, Cu₃Se₂ and Cu_2−xSe were prepared successfully and possessed different morphologies and sizes. Based on the analysis of their thermoelectric properties, Cu_2−xSe exhibited the highest Seebeck coefficient and lowest thermal conductivity among the three samples owing to its unique crystal structure. After being sintered at 400 °C under N₂ atmosphere, the electrical conductivity of Cu_2−xSe enhanced considerable, resulting in a significant improvement of its ZT values from 0.096 to 0.458 at 30 to 150 °C. This result is remarkable for copper selenide-based thermoelectric materials at a relatively low temperature range, indicating its brilliant potential in the field of flexible thermoelectric devices.

Copper selenides with different stoichiometric compositions were prepared via facile wet-chemistry methods and sintered-Cu_2−xSe exhibited the highest ZT value at a low temperature range.

Thermoelectric Properties of Cu2Se Synthesized by Hydrothermal Method and Densified by SPS Technique

The aim of the work was to obtain copper (I) selenide Cu₂Se material with excellent thermoelectric properties, synthesized using the hydrothermal method and densified by the spark plasma sintering (SPS) method. Chemical and phase composition studies were carried out by X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) methods. Measurements of thermoelectric transport properties, i.e., electrical conductivity, the Seebeck coefficient, and thermal conductivity in the temperature range from 300 to 965 K were carried out. Based on these results, the temperature dependence of the thermoelectric figure of merit ZT as a function of temperature was determined. The obtained, very high ZT parameter (ZT~1.75, T = 965 K) is one of the highest obtained so far for undoped Cu₂Se.

Cu2Se-based thermoelectric cellular architectures for efficient and durable power generation

Thermoelectric power generation offers a promising way to recover waste heat. The geometrical design of thermoelectric legs in modules is important to ensure sustainable power generation but cannot be easily achieved by traditional fabrication processes. Herein, we propose the design of cellular thermoelectric architectures for efficient and durable power generation, realized by the extrusion-based 3D printing process of Cu₂Se thermoelectric materials. We design the optimum aspect ratio of a cuboid thermoelectric leg to maximize the power output and extend this design to the mechanically stiff cellular architectures of hollow hexagonal column- and honeycomb-based thermoelectric legs. Moreover, we develop organic binder-free Cu₂Se-based 3D-printing inks with desirable viscoelasticity, tailored with an additive of inorganic Se₈²⁻ polyanion, fabricating the designed topologies. The computational simulation and experimental measurement demonstrate the superior power output and mechanical stiffness of the proposed cellular thermoelectric architectures to other designs, unveiling the importance of topological designs of thermoelectric legs toward higher power and longer durability.

The geometrical design of thermoelectric legs in modules is key for sustainable power generation but can be hardly achieved by traditional fabrication process. Here, the authors develop an extrusion-based 3D printing process of Cu2Se thermoelectric materials for efficient power generation.

Improved Thermoelectric Performance of Cu12Sb4S13 through Gd-Substitution Induced Enhancement of Electronic Density of States and Phonon Scattering

Cu₁₂Sb₄S₁₃ has aroused great interest because of its earth-abundant constituents and intrinsic low thermal conductivity. However, the applications of Cu₁₂Sb₄S₁₃ are hindered by its poor thermoelectric performance. Herein, it is shown that Gd substitution not only causes a significant increase in both electrical conductivity σ and thermopower S but also leads to dramatic drop in lattice thermal conductivity κ_L. Consequently, large ZT reaches 0.94 at 749 K for Cu_11.7Gd_0.3Sb₄S₁₃, which is ∼41% higher than the ZT value of undoped sample. Rietveld refinements of XRD results show that accompanying inhibition of impurity phase Cu₃SbS₄, the number of Cu vacancies increases substantially with substituted content x (x ≤ 0.3), which leads to reduced κ_L owing to intensive phonon scattering by the point defects and increased σ arising from the charged defects (V_Cu^'). Crucially, synchrotron radiation photoelectron spectroscopy reveals substantial increment of electronic density of states at Fermi level upon Gd substitution, which is proven, by our first-principle calculations, to originate from contribution of Gd 4f orbit, resulting in enhancement of S. Our study provides us with a new path to enhance thermoelectric performance of Cu₁₂Sb₄S₁₃.

Effect of the Annealing Atmosphere on Crystal Phase and Thermoelectric Properties of Copper Sulfide

Cu_2-xS has become one of the most promising thermoelectric materials for application in the middle-high temperature range. Its advantages include the abundance, low cost, and safety of its elements and a high performance at relatively elevated temperatures. However, stability issues limit its operation current and temperature, thus calling for the optimization of the material performance in the middle temperature range. Here, we present a synthetic protocol for large scale production of covellite CuS nanoparticles at ambient temperature and atmosphere, and using water as a solvent. The crystal phase and stoichiometry of the particles are afterward tuned through an annealing process at a moderate temperature under inert or reducing atmosphere. While annealing under argon results in Cu_1.8S nanopowder with a rhombohedral crystal phase, annealing in an atmosphere containing hydrogen leads to tetragonal Cu_1.96S. High temperature X-ray diffraction analysis shows the material annealed in argon to transform to the cubic phase at ca. 400 K, while the material annealed in the presence of hydrogen undergoes two phase transitions, first to hexagonal and then to the cubic structure. The annealing atmosphere, temperature, and time allow adjustment of the density of copper vacancies and thus tuning of the charge carrier concentration and material transport properties. In this direction, the material annealed under Ar is characterized by higher electrical conductivities but lower Seebeck coefficients than the material annealed in the presence of hydrogen. By optimizing the charge carrier concentration through the annealing time, Cu_2-xS with record figures of merit in the middle temperature range, up to 1.41 at 710 K, is obtained. We finally demonstrate that this strategy, based on a low-cost and scalable solution synthesis process, is also suitable for the production of high performance Cu_2-xS layers using high throughput and cost-effective printing technologies.