1
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Rossi M, van Schijndel TAJ, Lueb P, Badawy G, Jung J, Peeters WHJ, Kölling S, Moutanabbir O, Verheijen MA, Bakkers EPAM. Stemless InSb nanowire networks and nanoflakes grown on InP. NANOTECHNOLOGY 2024; 35:415602. [PMID: 38991513 DOI: 10.1088/1361-6528/ad61ef] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2024] [Accepted: 07/11/2024] [Indexed: 07/13/2024]
Abstract
Among the experimental realization of fault-tolerant topological circuits are interconnecting nanowires with minimal disorder. Out-of-plane indium antimonide (InSb) nanowire networks formed by merging are potential candidates. Yet, their growth requires a foreign material stem usually made of InP-InAs. This stem imposes limitations, which include restricting the size of the nanowire network, inducing disorder through grain boundaries and impurity incorporation. Here, we omit the stem allowing for the growth of stemless InSb nanowire networks on an InP substrate. To enable the growth without the stem, we show that a preconditioning step using arsine (AsH3) is required before InSb growth. High-yield of stemless nanowire growth is achieved by patterning the substrate with a selective-area mask with nanohole cavities, containing restricted gold droplets from which nanowires originate. Interestingly, these nanowires are bent, posing challenges for the synthesis of interconnecting nanowire networks due to merging failure. We attribute this bending to the non-homogeneous incorporation of arsenic impurities in the InSb nanowires and the interposed lattice-mismatch. By tuning the growth parameters, we can mitigate the bending, yielding large and single crystalline InSb nanowire networks and nanoflakes. The improved size and crystal quality of these nanostructures broaden the potential of this technique for fabricating advanced quantum devices.
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Affiliation(s)
- Marco Rossi
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Teun A J van Schijndel
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
- Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, United States of America
| | - Pim Lueb
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Ghada Badawy
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Jason Jung
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Wouter H J Peeters
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Sebastian Kölling
- Department of Engineering Physics, École Polytechnique de Montréal, Montreal, Québec, Canada
| | - Oussama Moutanabbir
- Department of Engineering Physics, École Polytechnique de Montréal, Montreal, Québec, Canada
| | - Marcel A Verheijen
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
- Eurofins Materials Science Netherlands B.V., High Tech Campus 11, 5656 AE, Eindhoven, The Netherlands
| | - Erik P A M Bakkers
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
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2
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Badawy G, Bakkers EPAM. Electronic Transport and Quantum Phenomena in Nanowires. Chem Rev 2024; 124:2419-2440. [PMID: 38394689 PMCID: PMC10941195 DOI: 10.1021/acs.chemrev.3c00656] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2023] [Revised: 01/26/2024] [Accepted: 02/08/2024] [Indexed: 02/25/2024]
Abstract
Nanowires are natural one-dimensional channels and offer new opportunities for advanced electronic quantum transport experiments. We review recent progress on the synthesis of nanowires and methods for the fabrication of hybrid semiconductor/superconductor systems. We discuss methods to characterize their electronic properties in the context of possible future applications such as topological and spin qubits. We focus on group III-V (InAs and InSb) and group IV (Ge/Si) semiconductors, since these are the most developed, and give an outlook on other potential materials.
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Affiliation(s)
- Ghada Badawy
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Erik P. A. M. Bakkers
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
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3
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Chen AH, Dempsey C, Pendharkar M, Sharma A, Zhang B, Tan S, Bellon L, Frolov SM, Palmstrøm CJ, Bellet-Amalric E, Hocevar M. Role of a capping layer on the crystalline structure of Sn thin films grown at cryogenic temperatures on InSb substrates. NANOTECHNOLOGY 2023; 35:075702. [PMID: 37890472 DOI: 10.1088/1361-6528/ad079e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Accepted: 10/26/2023] [Indexed: 10/29/2023]
Abstract
Metal deposition with cryogenic cooling is a common technique in the condensed matter community for producing ultra-thin epitaxial superconducting layers on semiconductors. However, a significant challenge arises when these films return to room temperature, as they tend to undergo dewetting. This issue can be mitigated by capping the films with an amorphous layer. In this study, we investigate the influence of differentin situfabricated caps on the structural characteristics of Sn thin films deposited at 80 K on InSb substrates. Regardless of the type of capping, we consistently observe that the films remain smooth upon returning to room temperature and exhibit epitaxy on InSb in the cubic Sn (α-Sn) phase. Notably, we identify a correlation between alumina capping using an electron beam evaporator and an increased presence of tetragonal Sn (β-Sn) grains. This suggests that heating from the alumina source may induce a partial phase transition in the Sn layer. The existence of theβ-Sn phase induces superconducting behavior of the films by percolation effect. This study highlights the potential for tailoring the structural properties of cryogenic Sn thin films throughin situcapping. This development opens avenues for precise control in the production of superconducting Sn films, facilitating their integration into quantum computing platforms.
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Affiliation(s)
- An-Hsi Chen
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, F-38000 Grenoble, France
| | - Connor Dempsey
- Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA 93106, United States of America
| | - Mihir Pendharkar
- Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA 93106, United States of America
| | - Amritesh Sharma
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, United States of America
| | - Bomin Zhang
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, United States of America
| | - Susheng Tan
- Department of Electrical and Computer Engineering, and Petersen Institute of NanoScience and Engineering, University of Pittsburgh, PA 15260, United States of America
| | - Ludovic Bellon
- Univ Lyon, ENS de Lyon, CNRS, Laboratoire de Physique, F-69342 Lyon, France
| | - Sergey M Frolov
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, United States of America
| | - Christopher J Palmstrøm
- Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA 93106, United States of America
| | - Edith Bellet-Amalric
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, F-38000 Grenoble, France
| | - Moïra Hocevar
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, F-38000 Grenoble, France
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4
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Goswami A, Mudi SR, Dempsey C, Zhang P, Wu H, Zhang B, Mitchell WJ, Lee JS, Frolov SM, Palmstrøm CJ. Sn/InAs Josephson Junctions on Selective Area Grown Nanowires with in Situ Shadowed Superconductor Evaporation. NANO LETTERS 2023; 23:7311-7318. [PMID: 37561818 DOI: 10.1021/acs.nanolett.3c01320] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/12/2023]
Abstract
Superconductor-semiconductor nanowire hybrid structures are useful in fabricating devices for quantum information processing. While selective area growth (SAG) offers the flexibility to grow semiconductor nanowires in arbitrary geometries, in situ evaporation of superconductors ensures pristine superconductor-semiconductor interfaces, resulting in strong induced superconductivity in the semiconducting nanowire. In this work, we used high-aspect-ratio SiOx dielectric walls to in situ evaporate islands of superconductor tin on in-plane InAs SAG nanowires. Our technique enables customization in the designs of such hybrid nanostructures, while simultaneously performing the nanowire and superconductor growth without breaking vacuum. Using this technique, we grew super(S)-normal(N)-super(S), NS, and SNSNS junctions. We performed cryogenic electron transport measurements revealing the presence of gate and field tunable supercurrents. We further measured the superconducting gap and critical fields in the hybrid nanostructures and the crossover from 2e to 1e periodicity in the SNSNS junctions as a proof of the usability of these hybrid nanostructures.
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Affiliation(s)
- Aranya Goswami
- Electrical and Computer Engineering Department, University of California, Santa Barbara, Santa Barbara, California 93106, United States
| | - Sanchayeta R Mudi
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Connor Dempsey
- Electrical and Computer Engineering Department, University of California, Santa Barbara, Santa Barbara, California 93106, United States
| | - Po Zhang
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Hao Wu
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Bomin Zhang
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - William J Mitchell
- Nanofabrication facility, University of California, Santa Barbara, Santa Barbara, California 93106, United States
| | - Joon Sue Lee
- California NanoSystems Institute, University of California Santa Barbara, Santa Barbara, California 93106, United States
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Sergey M Frolov
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Christopher J Palmstrøm
- Electrical and Computer Engineering Department, University of California, Santa Barbara, Santa Barbara, California 93106, United States
- Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106, United States
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5
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Jardine MA, Dardzinski D, Yu M, Purkayastha A, Chen AH, Chang YH, Engel A, Strocov VN, Hocevar M, Palmstro̷m C, Frolov SM, Marom N. First-Principles Assessment of CdTe as a Tunnel Barrier at the α-Sn/InSb Interface. ACS APPLIED MATERIALS & INTERFACES 2023; 15:16288-16298. [PMID: 36940162 PMCID: PMC10064317 DOI: 10.1021/acsami.3c00323] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/08/2023] [Accepted: 03/09/2023] [Indexed: 06/17/2023]
Abstract
Majorana zero modes, with prospective applications in topological quantum computing, are expected to arise in superconductor/semiconductor interfaces, such as β-Sn and InSb. However, proximity to the superconductor may also adversely affect the semiconductor's local properties. A tunnel barrier inserted at the interface could resolve this issue. We assess the wide band gap semiconductor, CdTe, as a candidate material to mediate the coupling at the lattice-matched interface between α-Sn and InSb. To this end, we use density functional theory (DFT) with Hubbard U corrections, whose values are machine-learned via Bayesian optimization (BO) [ npj Computational Materials 2020, 6, 180]. The results of DFT+U(BO) are validated against angle resolved photoemission spectroscopy (ARPES) experiments for α-Sn and CdTe. For CdTe, the z-unfolding method [ Advanced Quantum Technologies 2022, 5, 2100033] is used to resolve the contributions of different kz values to the ARPES. We then study the band offsets and the penetration depth of metal-induced gap states (MIGS) in bilayer interfaces of InSb/α-Sn, InSb/CdTe, and CdTe/α-Sn, as well as in trilayer interfaces of InSb/CdTe/α-Sn with increasing thickness of CdTe. We find that 16 atomic layers (3.5 nm) of CdTe can serve as a tunnel barrier, effectively shielding the InSb from MIGS from the α-Sn. This may guide the choice of dimensions of the CdTe barrier to mediate the coupling in semiconductor-superconductor devices in future Majorana zero modes experiments.
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Affiliation(s)
- Malcolm
J. A. Jardine
- Department
of Physics and Astronomy, University of
Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Derek Dardzinski
- Department
of Materials Science and Engineering, Carnegie
Mellon University, Pittsburgh, Pennsylvania 15213, United States
| | - Maituo Yu
- Department
of Materials Science and Engineering, Carnegie
Mellon University, Pittsburgh, Pennsylvania 15213, United States
| | - Amrita Purkayastha
- Department
of Physics and Astronomy, University of
Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - An-Hsi Chen
- Department
of Physics and Astronomy, University of
Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Yu-Hao Chang
- Université
Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble 38000, France
| | - Aaron Engel
- Université
Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble 38000, France
| | - Vladimir N. Strocov
- Materials
Department, University of California-Santa
Barbara, Santa
Barbara, California 93106, United States
| | - Moïra Hocevar
- Department
of Physics and Astronomy, University of
Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Chris Palmstro̷m
- Université
Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble 38000, France
- Paul Scherrer
Institut, Swiss Light Source, Villigen PSI CH-5232, Switzerland
| | - Sergey M. Frolov
- Department
of Physics and Astronomy, University of
Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Noa Marom
- Department
of Materials Science and Engineering, Carnegie
Mellon University, Pittsburgh, Pennsylvania 15213, United States
- Department
of Electrical and Computer Engineering, University of California-Santa Barbara, Santa Barbara, California 93106, United States
- Department
of Chemistry, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
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6
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Elalaily T, Berke M, Kedves M, Fülöp G, Scherübl Z, Kanne T, Nygård J, Makk P, Csonka S. Signatures of Gate-Driven Out-of-Equilibrium Superconductivity in Ta/InAs Nanowires. ACS NANO 2023; 17:5528-5535. [PMID: 36912466 PMCID: PMC10062030 DOI: 10.1021/acsnano.2c10877] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/01/2022] [Accepted: 03/08/2023] [Indexed: 06/18/2023]
Abstract
Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is controversial, and various mechanisms have been proposed to explain it. In this work, we have investigated the GCS in a Ta layer deposited on the surface of InAs nanowires. Comparison between switching current distributions at opposite gate polarities and between the gate dependence of two opposite side gates with different nanowire-gate spacings shows that the GCS is determined by the power dissipated by the gate leakage. We also found a substantial difference between the influence of the gate and elevated bath temperature on the magnetic field dependence of the supercurrent. Detailed analysis of the switching dynamics at high gate voltages shows that the device is driven into the multiple phase slips regime by high-energy fluctuations arising from the leakage current.
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Affiliation(s)
- Tosson Elalaily
- Department
of Physics, Institute of Physics, Budapest
University of Technology and Economics, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- MTA-BME
Superconducting Nanoelectronics Momentum Research Group, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- Department
of Physics, Faculty of Science, Tanta University, Al-Geish St., 31527 Tanta, Gharbia, Egypt
| | - Martin Berke
- Department
of Physics, Institute of Physics, Budapest
University of Technology and Economics, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- MTA-BME
Superconducting Nanoelectronics Momentum Research Group, Müegyetem rkp. 3., H-1111 Budapest, Hungary
| | - Máté Kedves
- Department
of Physics, Institute of Physics, Budapest
University of Technology and Economics, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- MTA-BME
Correlated van der Waals Structures Momentum Research Group, Müegyetem rkp. 3., H-1111 Budapest, Hungary
| | - Gergő Fülöp
- Department
of Physics, Institute of Physics, Budapest
University of Technology and Economics, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- MTA-BME
Superconducting Nanoelectronics Momentum Research Group, Müegyetem rkp. 3., H-1111 Budapest, Hungary
| | - Zoltán Scherübl
- Department
of Physics, Institute of Physics, Budapest
University of Technology and Economics, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- MTA-BME
Superconducting Nanoelectronics Momentum Research Group, Müegyetem rkp. 3., H-1111 Budapest, Hungary
| | - Thomas Kanne
- Center
for Quantum Devices and Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100, Copenhagen, Denmark
| | - Jesper Nygård
- Center
for Quantum Devices and Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100, Copenhagen, Denmark
| | - Péter Makk
- Department
of Physics, Institute of Physics, Budapest
University of Technology and Economics, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- MTA-BME
Correlated van der Waals Structures Momentum Research Group, Müegyetem rkp. 3., H-1111 Budapest, Hungary
| | - Szabolcs Csonka
- Department
of Physics, Institute of Physics, Budapest
University of Technology and Economics, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- MTA-BME
Superconducting Nanoelectronics Momentum Research Group, Müegyetem rkp. 3., H-1111 Budapest, Hungary
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7
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Valentini M, Borovkov M, Prada E, Martí-Sánchez S, Botifoll M, Hofmann A, Arbiol J, Aguado R, San-Jose P, Katsaros G. Majorana-like Coulomb spectroscopy in the absence of zero-bias peaks. Nature 2022; 612:442-447. [PMID: 36517713 DOI: 10.1038/s41586-022-05382-w] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/24/2022] [Accepted: 09/22/2022] [Indexed: 12/15/2022]
Abstract
Hybrid semiconductor-superconductor devices hold great promise for realizing topological quantum computing with Majorana zero modes1-5. However, multiple claims of Majorana detection, based on either tunnelling6-10 or Coulomb blockade (CB) spectroscopy11,12, remain disputed. Here we devise an experimental protocol that allows us to perform both types of measurement on the same hybrid island by adjusting its charging energy via tunable junctions to the normal leads. This method reduces ambiguities of Majorana detections by checking the consistency between CB spectroscopy and zero-bias peaks in non-blockaded transport. Specifically, we observe junction-dependent, even-odd modulated, single-electron CB peaks in InAs/Al hybrid nanowires without concomitant low-bias peaks in tunnelling spectroscopy. We provide a theoretical interpretation of the experimental observations in terms of low-energy, longitudinally confined island states rather than overlapping Majorana modes. Our results highlight the importance of combined measurements on the same device for the identification of topological Majorana zero modes.
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Affiliation(s)
- Marco Valentini
- Institute of Science and Technology Austria, Klosterneuburg, Austria.
| | - Maksim Borovkov
- Institute of Science and Technology Austria, Klosterneuburg, Austria.,Department of Physics, Princeton University, Princeton, NJ, USA
| | - Elsa Prada
- Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), Madrid, Spain
| | - Sara Martí-Sánchez
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Barcelona, Spain
| | - Marc Botifoll
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Barcelona, Spain
| | - Andrea Hofmann
- Institute of Science and Technology Austria, Klosterneuburg, Austria.,Universität Basel, Basel, Switzerland
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Barcelona, Spain.,ICREA, Passeig de Lluís, Barcelona, Spain
| | - Ramón Aguado
- Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), Madrid, Spain
| | - Pablo San-Jose
- Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), Madrid, Spain.
| | - Georgios Katsaros
- Institute of Science and Technology Austria, Klosterneuburg, Austria.
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8
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Kousar B, Carrad DJ, Stampfer L, Krogstrup P, Nygård J, Jespersen TS. InAs/MoRe Hybrid Semiconductor/Superconductor Nanowire Devices. NANO LETTERS 2022; 22:8845-8851. [PMID: 36332116 DOI: 10.1021/acs.nanolett.2c02532] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Implementing superconductors capable of proximity-inducing a large energy gap in semiconductors in the presence of strong magnetic fields is a major goal toward applications of semiconductor/superconductor hybrid materials in future quantum information technologies. Here, we study the performance of devices consisting of InAs nanowires in electrical contact with molybdenum-rhenium (MoRe) superconducting alloys. The MoRe thin films exhibit transition temperatures of ∼10 K and critical fields exceeding 6 T. Normal/superconductor devices enabled tunnel spectroscopy of the corresponding induced superconductivity, which was maintained up to ∼10 K, and MoRe-based Josephson devices exhibited supercurrents and multiple Andreev reflections. We determine an induced superconducting gap lower than expected from the transition temperature and observe gap softening at finite magnetic field. These may be common features for hybrids based on large-gap, type II superconductors. The results encourage further development of MoRe-based hybrids.
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Affiliation(s)
- Bilal Kousar
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100Copenhagen, Denmark
- Univ. Grenoble Alpes, CNRS, Institut Néel, 38000Grenoble, France
| | - Damon J Carrad
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800Kgs. Lyngby, Denmark
| | - Lukas Stampfer
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100Copenhagen, Denmark
| | - Peter Krogstrup
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100Copenhagen, Denmark
| | - Jesper Nygård
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100Copenhagen, Denmark
| | - Thomas S Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800Kgs. Lyngby, Denmark
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9
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Carrad DJ, Stampfer L, Ols Teins DG, Petersen CEN, Khan SA, Krogstrup P, Jespersen TS. Photon-Assisted Tunneling of High-Order Multiple Andreev Reflections in Epitaxial Nanowire Josephson Junctions. NANO LETTERS 2022; 22:6262-6267. [PMID: 35862144 DOI: 10.1021/acs.nanolett.2c01840] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Semiconductor/superconductor hybrids exhibit a range of phenomena that can be exploited for the study of novel physics and the development of new technologies. Understanding the origin of the energy spectrum of such hybrids is therefore a crucial goal. Here, we study Josephson junctions defined by shadow epitaxy on InAsSb/Al nanowires. The devices exhibit gate-tunable supercurrents at low temperatures and multiple Andreev reflections (MARs) at finite voltage bias. Under microwave irradiation, photon-assisted tunneling (PAT) of MARs produces characteristic oscillating sidebands at quantized energies, which depend on MAR order, n, in agreement with a recently suggested modification of the classical Tien-Gordon equation. The scaling of the quantized energy spacings with microwave frequency provides independent confirmation of the effective charge, ne, transferred by the nth-order tunneling process. The measurements suggest PAT as a powerful method for assigning the origin of low-energy spectral features in hybrid Josephson devices.
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Affiliation(s)
- Damon James Carrad
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800 Kgs. Lyngby, Denmark
| | - Lukas Stampfer
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Da Gs Ols Teins
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | | | - Sabbir A Khan
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Danish National Metrology Institute, Kogle Alle 5, 2970 Hørsholm, Denmark
| | - Peter Krogstrup
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Thomas Sand Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800 Kgs. Lyngby, Denmark
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10
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Mazur GP, van Loo N, Wang JY, Dvir T, Wang G, Khindanov A, Korneychuk S, Borsoi F, Dekker RC, Badawy G, Vinke P, Gazibegovic S, Bakkers EPAM, Pérez MQ, Heedt S, Kouwenhoven LP. Spin-Mixing Enhanced Proximity Effect in Aluminum-Based Superconductor-Semiconductor Hybrids. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2202034. [PMID: 35680622 DOI: 10.1002/adma.202202034] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2022] [Revised: 04/25/2022] [Indexed: 06/15/2023]
Abstract
In superconducting quantum circuits, aluminum is one of the most widely used materials. It is currently also the superconductor of choice for the development of topological qubits. However, aluminum-based devices suffer from poor magnetic field compatibility. Herein, this limitation is resolved by showing that adatoms of heavy elements (e.g., platinum) increase the critical field of thin aluminum films by more than a factor of two. Using tunnel junctions, it is shown that the increased field resilience originates from spin-orbit scattering introduced by Pt. This property is exploited in the context of the superconducting proximity effect in semiconductor-superconductor hybrids, where it is shown that InSb nanowires strongly coupled to Al/Pt films can maintain superconductivity up to 7 T. The two-electron charging effect is shown to be robust against the presence of heavy adatoms. Additionally, non-local spectroscopy is used in a three-terminal geometry to probe the bulk of hybrid devices, showing that it remains free of sub-gap states. Finally, it is demonstrated that proximitized semiconductor states maintain their ability to Zeeman-split in an applied magnetic field. Combined with the chemical stability and well-known fabrication routes of aluminum, Al/Pt emerges as the natural successor to Al-based systems and is a compelling alternative to other superconductors, whenever high-field resilience is required.
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Affiliation(s)
- Grzegorz P Mazur
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
| | - Nick van Loo
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
| | - Ji-Yin Wang
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
| | - Tom Dvir
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
| | - Guanzhong Wang
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
| | - Aleksei Khindanov
- Department of Physics, University of California, Santa Barbara, CA, 93106, USA
| | - Svetlana Korneychuk
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
| | - Francesco Borsoi
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
| | - Robin C Dekker
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
| | - Ghada Badawy
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, 5600 MB, The Netherlands
| | - Peter Vinke
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
| | - Sasa Gazibegovic
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, 5600 MB, The Netherlands
| | - Erik P A M Bakkers
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, 5600 MB, The Netherlands
| | - Marina Quintero- Pérez
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
- Netherlands Organisation for Applied Scientific Research (TNO), Delft, 2600 AD, The Netherlands
| | - Sebastian Heedt
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
| | - Leo P Kouwenhoven
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
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11
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Vekris A, Estrada Saldaña JC, Kanne T, Hvid-Olsen T, Marnauza M, Olsteins D, Wauters MM, Burrello M, Nygård J, Grove-Rasmussen K. Electronic Transport in Double-Nanowire Superconducting Islands with Multiple Terminals. NANO LETTERS 2022; 22:5765-5772. [PMID: 35833741 DOI: 10.1021/acs.nanolett.2c01161] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
We characterize in situ grown parallel nanowires bridged by a superconducting island. The magnetic-field and temperature dependence of Coulomb blockade peaks measured across different pairs of nanowire ends suggest the presence of a subgap state extended over the hybrid parallel-nanowire island. Being gate-tunable, accessible by multiple terminals, and free of quasiparticle poisoning, these nanowires show promise for the implementation of several proposals that rely on parallel nanowire platforms.
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Affiliation(s)
- Alexandros Vekris
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Sino-Danish Center for Education and Research (SDC) SDC Building, Yanqihu Campus, University of Chinese Academy of Sciences, 380 Huaibeizhuang, Huairou District, 101408 Beijing, China
| | | | - Thomas Kanne
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Thor Hvid-Olsen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Mikelis Marnauza
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Dags Olsteins
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Matteo M Wauters
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Niels Bohr International Academy, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Michele Burrello
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Niels Bohr International Academy, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Jesper Nygård
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Kasper Grove-Rasmussen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
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12
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Stampfer L, Carrad DJ, Olsteins D, Petersen CEN, Khan SA, Krogstrup P, Jespersen TS. Andreev Interference in the Surface Accumulation Layer of Half-Shell InAsSb/Al Hybrid Nanowires. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108878. [PMID: 35050545 DOI: 10.1002/adma.202108878] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2021] [Revised: 12/29/2021] [Indexed: 06/14/2023]
Abstract
Understanding the spatial distribution of charge carriers in III-V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate-dependent surface accumulation layer of half-shell InAsSb/Al nanowires is studied by means of Andreev interference in a parallel magnetic field. Both uniform hybrid nanowires and devices featuring a short Josephson junction fabricated by shadow lithography, exhibit periodic modulation of the switching current. The period corresponds to a flux quantum through the nanowire diameter and is consistent with Andreev bound states occupying a cylindrical surface accumulation layer. The spatial distribution is tunable by a gate potential as expected from electrostatic models.
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Affiliation(s)
- Lukas Stampfer
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, Copenhagen, 2100, Denmark
| | - Damon J Carrad
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, Copenhagen, 2100, Denmark
| | - Dags Olsteins
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, Copenhagen, 2100, Denmark
| | - Christian E N Petersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, Copenhagen, 2100, Denmark
| | - Sabbir A Khan
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, Copenhagen, 2100, Denmark
- Microsoft Quantum Materials Lab Copenhagen, Lyngby, 2800, Denmark
| | - Peter Krogstrup
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, Copenhagen, 2100, Denmark
- Microsoft Quantum Materials Lab Copenhagen, Lyngby, 2800, Denmark
| | - Thomas S Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, Copenhagen, 2100, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, Lyngby, 2800, Denmark
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13
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Zhang P, Wu H, Chen J, Khan SA, Krogstrup P, Pekker D, Frolov SM. Signatures of Andreev Blockade in a Double Quantum Dot Coupled to a Superconductor. PHYSICAL REVIEW LETTERS 2022; 128:046801. [PMID: 35148137 DOI: 10.1103/physrevlett.128.046801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2021] [Revised: 10/01/2021] [Accepted: 01/07/2022] [Indexed: 06/14/2023]
Abstract
We investigate an electron transport blockade regime in which a spin triplet localized in the path of current is forbidden from entering a spin-singlet superconductor. To stabilize the triplet, a double quantum dot is created electrostatically near a superconducting Al lead in an InAs nanowire. The quantum dot closest to the normal lead exhibits Coulomb diamonds, and the dot closest to the superconducting lead exhibits Andreev bound states and an induced gap. The experimental observations compare favorably to a theoretical model of Andreev blockade, named so because the triplet double dot configuration suppresses Andreev reflections. Observed leakage currents can be accounted for by finite temperature. We observe the predicted quadruple level degeneracy points of high current and a periodic conductance pattern controlled by the occupation of the normal dot. Even-odd transport asymmetry is lifted with increased temperature and magnetic field. This blockade phenomenon can be used to study spin structure of superconductors. It may also find utility in quantum computing devices that use Andreev or Majorana states.
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Affiliation(s)
- Po Zhang
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA
| | - Hao Wu
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA
| | - Jun Chen
- Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA
| | - Sabbir A Khan
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Peter Krogstrup
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - David Pekker
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA
| | - Sergey M Frolov
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA
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14
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Li Z, Lu J, Wei W, Tao M, Wang Z, Dai Z. Recent advances in electron manipulation of nanomaterials for photoelectrochemical biosensors. Chem Commun (Camb) 2022; 58:12418-12430. [DOI: 10.1039/d2cc04298c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
This feature article discusses the recent advances and strategies of building photoelectrochemical (PEC) biosensors from the perspective of regulating the electron transfer of nanomaterials.
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Affiliation(s)
- Zijun Li
- Collaborative Innovation Center of Biomedical Functional Materials and Key Laboratory of Biofunctional Materials of Jiangsu Province, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing, 210023, P. R. China
| | - Jiarui Lu
- Collaborative Innovation Center of Biomedical Functional Materials and Key Laboratory of Biofunctional Materials of Jiangsu Province, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing, 210023, P. R. China
| | - Wanting Wei
- Collaborative Innovation Center of Biomedical Functional Materials and Key Laboratory of Biofunctional Materials of Jiangsu Province, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing, 210023, P. R. China
| | - Min Tao
- Collaborative Innovation Center of Biomedical Functional Materials and Key Laboratory of Biofunctional Materials of Jiangsu Province, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing, 210023, P. R. China
| | - Zhaoyin Wang
- Collaborative Innovation Center of Biomedical Functional Materials and Key Laboratory of Biofunctional Materials of Jiangsu Province, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing, 210023, P. R. China
| | - Zhihui Dai
- Collaborative Innovation Center of Biomedical Functional Materials and Key Laboratory of Biofunctional Materials of Jiangsu Province, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing, 210023, P. R. China
- School of Chemistry and Molecular Engineering, Nanjing Tech University, Nanjing, 211816, P. R. China
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15
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Ritter M, Schmid H, Sousa M, Staudinger P, Haxell DZ, Mueed MA, Madon B, Pushp A, Riel H, Nichele F. Semiconductor Epitaxy in Superconducting Templates. NANO LETTERS 2021; 21:9922-9929. [PMID: 34788993 PMCID: PMC8662718 DOI: 10.1021/acs.nanolett.1c03133] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/13/2021] [Revised: 11/10/2021] [Indexed: 06/13/2023]
Abstract
Integration of high-quality semiconductor-superconductor devices into scalable and complementary metal-oxide-semiconductor compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characterized by sharp semiconductor-superconductor interfaces and with alignment along arbitrary crystallographic directions. Electrical characterization at low temperature reveals proximity induced superconductivity in InAs via a transparent interface.
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Affiliation(s)
- Markus
F. Ritter
- IBM
Research Europe, Säumerstrasse
4, 8803 Rüschlikon, Switzerland
| | - Heinz Schmid
- IBM
Research Europe, Säumerstrasse
4, 8803 Rüschlikon, Switzerland
| | - Marilyne Sousa
- IBM
Research Europe, Säumerstrasse
4, 8803 Rüschlikon, Switzerland
| | | | - Daniel Z. Haxell
- IBM
Research Europe, Säumerstrasse
4, 8803 Rüschlikon, Switzerland
| | - M. A. Mueed
- IBM
Almaden Research Center, San Jose, California 95120, United States
| | - Benjamin Madon
- IBM
Almaden Research Center, San Jose, California 95120, United States
| | - Aakash Pushp
- IBM
Almaden Research Center, San Jose, California 95120, United States
| | - Heike Riel
- IBM
Research Europe, Säumerstrasse
4, 8803 Rüschlikon, Switzerland
| | - Fabrizio Nichele
- IBM
Research Europe, Säumerstrasse
4, 8803 Rüschlikon, Switzerland
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16
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Bjergfelt MS, Carrad DJ, Kanne T, Johnson E, Fiordaliso EM, Jespersen TS, Nygård J. Superconductivity and Parity Preservation in As-Grown In Islands on InAs Nanowires. NANO LETTERS 2021; 21:9875-9881. [PMID: 34807620 DOI: 10.1021/acs.nanolett.1c02487] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We report in situ synthesis of crystalline indium islands on InAs nanowires grown by molecular beam epitaxy. Structural analysis by transmission electron microscopy showed that In crystals grew in a tetragonal body-centered crystal structure within two families of orientations relative to wurtzite InAs. The crystalline islands had lengths < 500 nm and low-energy surfaces, suggesting that growth was driven mainly by surface energy minimization. Electrical transport through In/InAs devices exhibited Cooper pair charging, evidencing charge parity preservation and a pristine In/InAs interface, with an induced superconducting gap ∼ 0.45 meV. Cooper pair charging persisted to temperatures > 1.2 K and magnetic fields ∼ 0.7 T, demonstrating that In/InAs hybrids belong to an expanding class of semiconductor/superconductor hybrids operating over a wider parameter space than state-of-the-art Al-based hybrids. Engineering crystal morphology while isolating single islands using shadow epitaxy provides an interesting alternative to previous semiconductor/superconductor hybrid morphologies and device geometries.
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Affiliation(s)
- Martin Saurbrey Bjergfelt
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Damon J Carrad
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kongens Lyngby Denmark
| | - Thomas Kanne
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Erik Johnson
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- DTU Mechanical Engineering, Technical University of Denmark, 2800 Kongens Lyngby Denmark
| | | | - Thomas Sand Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kongens Lyngby Denmark
| | - Jesper Nygård
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
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17
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Küpers H, Lewis RB, Corfdir P, Niehle M, Flissikowski T, Grahn HT, Trampert A, Brandt O, Geelhaar L. Drastic Effect of Sequential Deposition Resulting from Flux Directionality on the Luminescence Efficiency of Nanowire Shells. ACS APPLIED MATERIALS & INTERFACES 2021; 13:50220-50227. [PMID: 34643384 DOI: 10.1021/acsami.1c12371] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Core-shell nanowire heterostructures form the basis for many innovative devices. When compound nanowire shells are grown by directional deposition techniques, the azimuthal position of the sources for the different constituents in the growth reactor, substrate rotation, and nanowire self-shadowing inevitably lead to sequential deposition. Here, we uncover for In0.15Ga0.85As/GaAs shell quantum wells grown by molecular beam epitaxy a drastic impact of this sequentiality on the luminescence efficiency. The photoluminescence intensity of shell quantum wells grown with a flux sequence corresponding to migration enhanced epitaxy, that is, when As and the group-III metals essentially do not impinge at the same time, is more than 2 orders of magnitude higher than for shell quantum wells prepared with substantially overlapping fluxes. Transmission electron microscopy does not reveal any extended defects explaining this difference. Our analysis of photoluminescence transients shows that co-deposition has two detrimental microscopic effects. First, a higher density of electrically active point defects leads to internal electric fields reducing the electron-hole wave function overlap. Second, more point defects form that act as nonradiative recombination centers. Our study demonstrates that the source arrangement of the growth reactor, which is of mere technical relevance for planar structures, can have drastic consequences for the material properties of nanowire shells. We expect that this finding holds good also for other alloy nanowire shells.
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Affiliation(s)
- Hanno Küpers
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Ryan B Lewis
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Pierre Corfdir
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Michael Niehle
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Timur Flissikowski
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Holger T Grahn
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Achim Trampert
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Oliver Brandt
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Lutz Geelhaar
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
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18
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Heedt S, Quintero-Pérez M, Borsoi F, Fursina A, van Loo N, Mazur GP, Nowak MP, Ammerlaan M, Li K, Korneychuk S, Shen J, van de Poll MAY, Badawy G, Gazibegovic S, de Jong N, Aseev P, van Hoogdalem K, Bakkers EPAM, Kouwenhoven LP. Shadow-wall lithography of ballistic superconductor-semiconductor quantum devices. Nat Commun 2021; 12:4914. [PMID: 34389705 PMCID: PMC8363628 DOI: 10.1038/s41467-021-25100-w] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/14/2020] [Accepted: 07/19/2021] [Indexed: 11/09/2022] Open
Abstract
The realization of hybrid superconductor-semiconductor quantum devices, in particular a topological qubit, calls for advanced techniques to readily and reproducibly engineer induced superconductivity in semiconductor nanowires. Here, we introduce an on-chip fabrication paradigm based on shadow walls that offers substantial advances in device quality and reproducibility. It allows for the implementation of hybrid quantum devices and ultimately topological qubits while eliminating fabrication steps such as lithography and etching. This is critical to preserve the integrity and homogeneity of the fragile hybrid interfaces. The approach simplifies the reproducible fabrication of devices with a hard induced superconducting gap and ballistic normal-/superconductor junctions. Large gate-tunable supercurrents and high-order multiple Andreev reflections manifest the exceptional coherence of the resulting nanowire Josephson junctions. Our approach enables the realization of 3-terminal devices, where zero-bias conductance peaks emerge in a magnetic field concurrently at both boundaries of the one-dimensional hybrids.
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Affiliation(s)
- Sebastian Heedt
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands. .,Microsoft Quantum Lab Delft, Delft, The Netherlands.
| | | | - Francesco Borsoi
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | | | - Nick van Loo
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Grzegorz P Mazur
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Michał P Nowak
- AGH University of Science and Technology, Academic Centre for Materials and Nanotechnology, Krakow, Poland
| | - Mark Ammerlaan
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Kongyi Li
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Svetlana Korneychuk
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Jie Shen
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - May An Y van de Poll
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Ghada Badawy
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
| | - Sasa Gazibegovic
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
| | - Nick de Jong
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands.,Netherlands Organisation for Applied Scientific Research (TNO), Delft, The Netherlands
| | - Pavel Aseev
- Microsoft Quantum Lab Delft, Delft, The Netherlands
| | | | - Erik P A M Bakkers
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
| | - Leo P Kouwenhoven
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands.,Microsoft Quantum Lab Delft, Delft, The Netherlands
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19
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Khan SA, Stampfer L, Mutas T, Kang JH, Krogstrup P, Jespersen TS. Multiterminal Quantized Conductance in InSb Nanocrosses. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2100078. [PMID: 34075631 DOI: 10.1002/adma.202100078] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2021] [Revised: 03/15/2021] [Indexed: 06/12/2023]
Abstract
By studying the time-dependent axial and radial growth of InSb nanowires (NWs), the conditions for the synthesis of single-crystalline InSb nanocrosses (NCs) by molecular beam epitaxy are mapped. Low-temperature electrical measurements of InSb NC devices with local gate control on individual terminals exhibit quantized conductance and are used to probe the spatial distribution of the conducting channels. Tuning to a situation where the NC junction is connected by few-channel quantum point contacts in the connecting NW terminals, it is shown that transport through the junction is ballistic except close to pinch-off. Combined with a new concept for shadow-epitaxy of patterned superconductors on NCs, the structures reported here show promise for the realization of non-trivial topological states in multi-terminal Josephson junctions.
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Affiliation(s)
- Sabbir A Khan
- Microsoft Quantum Materials Lab Copenhagen, Lyngby, 2800, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Lukas Stampfer
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Timo Mutas
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Jung-Hyun Kang
- Microsoft Quantum Materials Lab Copenhagen, Lyngby, 2800, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Peter Krogstrup
- Microsoft Quantum Materials Lab Copenhagen, Lyngby, 2800, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Thomas S Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building, Lyngby, 310, 2800, Denmark
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20
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Kanne T, Marnauza M, Olsteins D, Carrad DJ, Sestoft JE, de Bruijckere J, Zeng L, Johnson E, Olsson E, Grove-Rasmussen K, Nygård J. Epitaxial Pb on InAs nanowires for quantum devices. NATURE NANOTECHNOLOGY 2021; 16:776-781. [PMID: 33972757 DOI: 10.1038/s41565-021-00900-9] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2020] [Accepted: 03/11/2021] [Indexed: 05/21/2023]
Abstract
Semiconductor-superconductor hybrids are widely used to realize complex quantum phenomena, such as topological superconductivity and spins coupled to Cooper pairs. Accessing new, exotic regimes at high magnetic fields and increasing operating temperatures beyond the state-of-the-art requires new, epitaxially matched semiconductor-superconductor materials. One challenge is the generation of favourable conditions for heterostructural formation between materials with the desired properties. Here we harness an increased knowledge of metal-on-semiconductor growth to develop InAs nanowires with epitaxially matched, single-crystal, atomically flat Pb films with no axial grain boundaries. These highly ordered heterostructures have a critical temperature of 7 K and a superconducting gap of 1.25 meV, which remains hard at 8.5 T, and therefore they offer a parameter space more than twice as large as those of alternative semiconductor-superconductor hybrids. Additionally, InAs/Pb island devices exhibit magnetic field-driven transitions from a Cooper pair to single-electron charging, a prerequisite for use in topological quantum computation. Semiconductor-Pb hybrids potentially enable access to entirely new regimes for a number of different quantum systems.
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Affiliation(s)
- Thomas Kanne
- Center for Quantum Devices & Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark.
| | - Mikelis Marnauza
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Dags Olsteins
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Damon J Carrad
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Joachim E Sestoft
- Center for Quantum Devices & Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Joeri de Bruijckere
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Lunjie Zeng
- Department of Physics, Chalmers University of Technology, Gothenburg, Sweden
| | - Erik Johnson
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Eva Olsson
- Department of Physics, Chalmers University of Technology, Gothenburg, Sweden
| | - Kasper Grove-Rasmussen
- Center for Quantum Devices & Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Jesper Nygård
- Center for Quantum Devices & Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark.
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21
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Yang H, Zhang M, Wang L, Yu R, Tu W, Wang Z, Wang R, Gao H, Dai Z. Modulating Polarization of Perovskite-Based Heterostructures via In Situ Semiconductor Generation and Enzyme Catalysis for Signal-Switchable Photoelectrochemical Biosensing. Anal Chem 2021; 93:8370-8378. [DOI: 10.1021/acs.analchem.1c01457] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
Affiliation(s)
- Hao Yang
- Jiangsu Collaborative Innovation Center of Biomedical Functional Materials and Jiangsu Key Laboratory of Biofunctional Materials, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, P. R. China
| | - Min Zhang
- Jiangsu Collaborative Innovation Center of Biomedical Functional Materials and Jiangsu Key Laboratory of Biofunctional Materials, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, P. R. China
| | - Lei Wang
- Jiangsu Collaborative Innovation Center of Biomedical Functional Materials and Jiangsu Key Laboratory of Biofunctional Materials, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, P. R. China
| | - Renzhong Yu
- Jiangsu Collaborative Innovation Center of Biomedical Functional Materials and Jiangsu Key Laboratory of Biofunctional Materials, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, P. R. China
| | - Wenwen Tu
- Jiangsu Collaborative Innovation Center of Biomedical Functional Materials and Jiangsu Key Laboratory of Biofunctional Materials, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, P. R. China
| | - Zhaoyin Wang
- Jiangsu Collaborative Innovation Center of Biomedical Functional Materials and Jiangsu Key Laboratory of Biofunctional Materials, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, P. R. China
| | - Rui Wang
- Jiangsu Collaborative Innovation Center of Biomedical Functional Materials and Jiangsu Key Laboratory of Biofunctional Materials, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, P. R. China
| | - Huan Gao
- Jiangsu Collaborative Innovation Center of Biomedical Functional Materials and Jiangsu Key Laboratory of Biofunctional Materials, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, P. R. China
| | - Zhihui Dai
- Jiangsu Collaborative Innovation Center of Biomedical Functional Materials and Jiangsu Key Laboratory of Biofunctional Materials, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, P. R. China
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22
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Pendharkar M, Zhang B, Wu H, Zarassi A, Zhang P, Dempsey CP, Lee JS, Harrington SD, Badawy G, Gazibegovic S, Op Het Veld RLM, Rossi M, Jung J, Chen AH, Verheijen MA, Hocevar M, Bakkers EPAM, Palmstrøm CJ, Frolov SM. Parity-preserving and magnetic field-resilient superconductivity in InSb nanowires with Sn shells. Science 2021; 372:508-511. [PMID: 33858990 DOI: 10.1126/science.aba5211] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/12/2019] [Accepted: 03/13/2021] [Indexed: 11/02/2022]
Abstract
Improving materials used to make qubits is crucial to further progress in quantum information processing. Of particular interest are semiconductor-superconductor heterostructures that are expected to form the basis of topological quantum computing. We grew semiconductor indium antimonide nanowires that were coated with shells of tin of uniform thickness. No interdiffusion was observed at the interface between Sn and InSb. Tunnel junctions were prepared by in situ shadowing. Despite the lack of lattice matching between Sn and InSb, a 15-nanometer-thick shell of tin was found to induce a hard superconducting gap, with superconductivity persisting in magnetic field up to 4 teslas. A small island of Sn-InSb exhibits the two-electron charging effect. These findings suggest a less restrictive approach to fabricating superconducting and topological quantum circuits.
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Affiliation(s)
- M Pendharkar
- Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
| | - B Zhang
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
| | - H Wu
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
| | - A Zarassi
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
| | - P Zhang
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
| | - C P Dempsey
- Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
| | - J S Lee
- California NanoSystems Institute, University of California, Santa Barbara, CA 93106, USA
| | - S D Harrington
- Materials Department, University of California, Santa Barbara, CA 93106, USA
| | - G Badawy
- Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | - S Gazibegovic
- Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | | | - M Rossi
- Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | - J Jung
- Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | - A-H Chen
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France
| | - M A Verheijen
- Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | - M Hocevar
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France
| | - E P A M Bakkers
- Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | - C J Palmstrøm
- Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA.,California NanoSystems Institute, University of California, Santa Barbara, CA 93106, USA.,Materials Department, University of California, Santa Barbara, CA 93106, USA
| | - S M Frolov
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA.
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23
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Fatemi V, Devoret MH. Going with the grains. Science 2021; 372:464. [PMID: 33926940 DOI: 10.1126/science.abd8556] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Affiliation(s)
- Valla Fatemi
- Department of Applied Physics, Yale University, New Haven, CT 06520, USA.
| | - Michel H Devoret
- Department of Applied Physics, Yale University, New Haven, CT 06520, USA
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24
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Perla P, Fonseka HA, Zellekens P, Deacon R, Han Y, Kölzer J, Mörstedt T, Bennemann B, Espiari A, Ishibashi K, Grützmacher D, Sanchez AM, Lepsa MI, Schäpers T. Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation. NANOSCALE ADVANCES 2021; 3:1413-1421. [PMID: 36132855 PMCID: PMC9418346 DOI: 10.1039/d0na00999g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2020] [Accepted: 01/17/2021] [Indexed: 06/14/2023]
Abstract
Josephson junctions based on InAs semiconducting nanowires and Nb superconducting electrodes are fabricated in situ by a special shadow evaporation scheme for the superconductor electrode. Compared to other metallic superconductors such as Al, Nb has the advantage of a larger superconducting gap which allows operation at higher temperatures and magnetic fields. Our junctions are fabricated by shadow evaporation of Nb on pairs of InAs nanowires grown selectively on two adjacent tilted Si (111) facets and crossing each other at a small distance. The upper wire relative to the deposition source acts as a shadow mask determining the gap of the superconducting electrodes on the lower nanowire. Electron microscopy measurements show that the fully in situ fabrication method gives a clean InAs/Nb interface. A clear Josephson supercurrent is observed in the current-voltage characteristics, which can be controlled by a bottom gate. The large excess current indicates a high junction transparency. Under microwave radiation, pronounced integer Shapiro steps are observed suggesting a sinusoidal current-phase relation. Owing to the large critical field of Nb, the Josephson supercurrent can be maintained to magnetic fields exceeding 1 T. Our results show that in situ prepared Nb/InAs nanowire contacts are very interesting candidates for superconducting quantum circuits requiring large magnetic fields.
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Affiliation(s)
- Pujitha Perla
- Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich 52425 Jülich Germany +49 2461 61 2940 +49 2461 61 2668
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich, RWTH Aachen University Germany
| | - H Aruni Fonseka
- Department of Physics, University of Warwick Coventry CV4 7AL UK
| | - Patrick Zellekens
- Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich 52425 Jülich Germany +49 2461 61 2940 +49 2461 61 2668
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich, RWTH Aachen University Germany
| | - Russell Deacon
- RIKEN Center for Emergent Matter Science and Advanced Device Laboratory 351-0198 Saitama Japan
| | - Yisong Han
- Department of Physics, University of Warwick Coventry CV4 7AL UK
| | - Jonas Kölzer
- Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich 52425 Jülich Germany +49 2461 61 2940 +49 2461 61 2668
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich, RWTH Aachen University Germany
| | - Timm Mörstedt
- Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich 52425 Jülich Germany +49 2461 61 2940 +49 2461 61 2668
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich, RWTH Aachen University Germany
| | - Benjamin Bennemann
- Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich 52425 Jülich Germany +49 2461 61 2940 +49 2461 61 2668
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich, RWTH Aachen University Germany
| | - Abbas Espiari
- Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich 52425 Jülich Germany +49 2461 61 2940 +49 2461 61 2668
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich, RWTH Aachen University Germany
| | - Koji Ishibashi
- RIKEN Center for Emergent Matter Science and Advanced Device Laboratory 351-0198 Saitama Japan
| | - Detlev Grützmacher
- Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich 52425 Jülich Germany +49 2461 61 2940 +49 2461 61 2668
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich, RWTH Aachen University Germany
- Peter Grünberg Institut (PGI-10), Forschungszentrum Jülich 52425 Jülich Germany
| | - Ana M Sanchez
- Department of Physics, University of Warwick Coventry CV4 7AL UK
| | - Mihail Ion Lepsa
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich, RWTH Aachen University Germany
- Peter Grünberg Institut (PGI-10), Forschungszentrum Jülich 52425 Jülich Germany
| | - Thomas Schäpers
- Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich 52425 Jülich Germany +49 2461 61 2940 +49 2461 61 2668
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich, RWTH Aachen University Germany
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25
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Khan SA, Lampadaris C, Cui A, Stampfer L, Liu Y, Pauka SJ, Cachaza ME, Fiordaliso EM, Kang JH, Korneychuk S, Mutas T, Sestoft JE, Krizek F, Tanta R, Cassidy MC, Jespersen TS, Krogstrup P. Highly Transparent Gatable Superconducting Shadow Junctions. ACS NANO 2020; 14:14605-14615. [PMID: 32396328 DOI: 10.1021/acsnano.0c02979] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Gate-tunable junctions are key elements in quantum devices based on hybrid semiconductor-superconductor materials. They serve multiple purposes ranging from tunnel spectroscopy probes to voltage-controlled qubit operations in gatemon and topological qubits. Common to all is that junction transparency plays a critical role. In this study, we grow single-crystalline InAs, InSb, and InAs1-xSbx semiconductor nanowires with epitaxial Al, Sn, and Pb superconductors and in situ shadowed junctions in a single-step molecular beam epitaxy process. We investigate correlations between fabrication parameters, junction morphologies, and electronic transport properties of the junctions and show that the examined in situ shadowed junctions are of significantly higher quality than the etched junctions. By varying the edge sharpness of the shadow junctions, we show that the sharpest edges yield the highest junction transparency for all three examined semiconductors. Further, critical supercurrent measurements reveal an extraordinarily high ICRN, close to the KO-2 limit. This study demonstrates a promising engineering path toward reliable gate-tunable superconducting qubits.
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Affiliation(s)
- Sabbir A Khan
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Charalampos Lampadaris
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Ajuan Cui
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Lukas Stampfer
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Yu Liu
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Sebastian J Pauka
- Microsoft Quantum Sydney, The University of Sydney, Sydney, NSW 2006, Australia
| | - Martin E Cachaza
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | | | - Jung-Hyun Kang
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Svetlana Korneychuk
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, The Netherlands
| | - Timo Mutas
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Joachim E Sestoft
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Filip Krizek
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Rawa Tanta
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Maja C Cassidy
- Microsoft Quantum Sydney, The University of Sydney, Sydney, NSW 2006, Australia
| | - Thomas S Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Peter Krogstrup
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
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