1
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Langer F, Yin S, Duvigneau J, Vancso GJ, Benson N. Suppression of the Coffee Ring Effect in a Single Solvent-Based Silicon Nanoparticle Ink. ACS APPLIED MATERIALS & INTERFACES 2024; 16:4242-4248. [PMID: 38193452 DOI: 10.1021/acsami.3c16316] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/10/2024]
Abstract
Silicon (Si) is made printable by dispersing Si nanoparticles in a single organic solvent. Viscoelastic properties of the prepared inks as well as the uniformity of inkjet-printed thin films are investigated in dependence on the Si volume fraction. It has been demonstrated that no ink additives are needed to completely suppress the occurrence of the coffee ring effect. This is obtained by increasing the ink's volume fraction to induce gelation in order to generate elasticity. The printability of our inks is investigated in terms of Weber, Reynolds, and Ohnesorge numbers and found to be maintained even at high particle loads due to shear-thinning viscosity behavior. When printed onto tungsten (W) substrates, Si inks with ϕ(Si) = 0.4% and ϕ(Si) = 2.1% leave a ring stain after drying, whereas coffee rings are absent for inks with ϕ(Si) = 3.0% and above. The reason for this is a significant ink elasticity achieved by the buildup of a gel network for higher particle loads, which leads to thixotropy-like properties. These are low viscosity for printability and elevated elasticity during ink drying, made possible by a breakup of the gel network during drop formation in conjunction with a rapid network reformation after deposition.
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Affiliation(s)
- Fabian Langer
- Institute of Technologies for Nanostructures (NST), University of Duisburg-Essen and CENIDE, Duisburg D-47048, Germany
| | - Sida Yin
- Materials Science and Technology of Polymers and Sustainable Polymer Chemistry, University of Twente, Enschede 7522 NB, The Netherlands
| | - Joost Duvigneau
- Materials Science and Technology of Polymers and Sustainable Polymer Chemistry, University of Twente, Enschede 7522 NB, The Netherlands
| | - G Julius Vancso
- Materials Science and Technology of Polymers and Sustainable Polymer Chemistry, University of Twente, Enschede 7522 NB, The Netherlands
| | - Niels Benson
- Institute of Technologies for Nanostructures (NST), University of Duisburg-Essen and CENIDE, Duisburg D-47048, Germany
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2
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Zou D, He Z, Chen M, Yan L, Guo Y, Gao G, Li C, Piao Y, Cheng X, Chan PKL. Dry Lithography Patterning of Monolayer Flexible Field Effect Transistors by 2D Mica Stamping. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211600. [PMID: 36841244 DOI: 10.1002/adma.202211600] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2022] [Revised: 02/14/2023] [Indexed: 05/19/2023]
Abstract
Organic field-effect transistors (OFETs) based on 2D monolayer organic semiconductors (OSC) have demonstrated promising potentials for various applications, such as light emitting diode (LED) display drivers, logic circuits, and wearable electrocardiography (ECG) sensors. To date, the fabrications of this class of highly crystallized 2D organic semiconductors (OSC) are dominated by solution shearing. As these organic active layers are only a few molecular layers thick, their compatibilities with conventional thermal evaporated top electrodes or sophisticated photolithography patterning are very limited, which also restricts their device density. Here, an electrode transfer stamp and a semiconductor patterning stamp are developed to fabricate OFETs with channel lengths down to 3 µm over a large area without using any chemicals or causing any damage to the active layer. 2D 2,9-didecyldinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C10 -DNTT) monolayer OFETs developed by this new approach shows decent performance properties with a low threshold voltage (VTH ) less than 0.5 V, intrinsic mobility higher than 10 cm2 V-1 s-1 and a subthreshold swing (SS) less than 100 mV dec-1 . The proposed patterning approach is completely comparable with ultraflexible parylene substrate less than 2 µm thick. By further reducing the channel length down to 2 µm and using the monolayer OFET in an AC/DC rectifying circuit, the measured cutoff frequency is up to 17.3 MHz with an input voltage of 4 V. The newly proposed electrode transfer and patterning stamps have addressed the long-lasting compatibility problem of depositing electrodes onto 2D organic monolayer and the semiconductor patterning. It opens a new path to reduce the fabrication cost and simplify the manufacturing process of high-density OFETs for more advanced electronic or biomedical applications.
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Affiliation(s)
- Deng Zou
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
- Advanced Biomedical Instrumentation Centre, Hong Kong Science Park, Shatin, Hong Kong, P. R. China
| | - Zhenfei He
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
| | - Ming Chen
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Lizhi Yan
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
| | - Yifan Guo
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
| | - Guoyun Gao
- Department of Electrical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
| | - Can Li
- Department of Electrical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
| | - Yingzhe Piao
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Xing Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Paddy K L Chan
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
- Advanced Biomedical Instrumentation Centre, Hong Kong Science Park, Shatin, Hong Kong, P. R. China
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3
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Yao Z, Lundqvist E, Kuang Y, Ardoña HAM. Engineering Multi-Scale Organization for Biotic and Organic Abiotic Electroactive Systems. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2205381. [PMID: 36670065 PMCID: PMC10074131 DOI: 10.1002/advs.202205381] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/17/2022] [Revised: 12/16/2022] [Indexed: 06/17/2023]
Abstract
Multi-scale organization of molecular and living components is one of the most critical parameters that regulate charge transport in electroactive systems-whether abiotic, biotic, or hybrid interfaces. In this article, an overview of the current state-of-the-art for controlling molecular order, nanoscale assembly, microstructure domains, and macroscale architectures of electroactive organic interfaces used for biomedical applications is provided. Discussed herein are the leading strategies and challenges to date for engineering the multi-scale organization of electroactive organic materials, including biomolecule-based materials, synthetic conjugated molecules, polymers, and their biohybrid analogs. Importantly, this review provides a unique discussion on how the dependence of conduction phenomena on structural organization is observed for electroactive organic materials, as well as for their living counterparts in electrogenic tissues and biotic-abiotic interfaces. Expansion of fabrication capabilities that enable higher resolution and throughput for the engineering of ordered, patterned, and architecture electroactive systems will significantly impact the future of bioelectronic technologies for medical devices, bioinspired harvesting platforms, and in vitro models of electroactive tissues. In summary, this article presents how ordering at multiple scales is important for modulating transport in both the electroactive organic, abiotic, and living components of bioelectronic systems.
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Affiliation(s)
- Ze‐Fan Yao
- Department of Chemical and Biomolecular EngineeringSamueli School of EngineeringUniversity of CaliforniaIrvineCA92697USA
- Department of ChemistrySchool of Physical SciencesUniversity of CaliforniaIrvineCA92697USA
| | - Emil Lundqvist
- Department of Biomedical EngineeringSamueli School of EngineeringUniversity of CaliforniaIrvineCA92697USA
| | - Yuyao Kuang
- Department of Chemical and Biomolecular EngineeringSamueli School of EngineeringUniversity of CaliforniaIrvineCA92697USA
| | - Herdeline Ann M. Ardoña
- Department of Chemical and Biomolecular EngineeringSamueli School of EngineeringUniversity of CaliforniaIrvineCA92697USA
- Department of ChemistrySchool of Physical SciencesUniversity of CaliforniaIrvineCA92697USA
- Department of Biomedical EngineeringSamueli School of EngineeringUniversity of CaliforniaIrvineCA92697USA
- Sue & Bill Gross Stem Cell Research CenterUniversity of CaliforniaIrvineCA92697USA
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4
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Choi KH, Kim SJ, Kim H, Jang HW, Yi H, Park MC, Choi C, Ju H, Lim JA. Fibriform Organic Electrochemical Diodes with Rectifying, Complementary Logic and Transient Voltage Suppression Functions for Wearable E-Textile Embedded Circuits. ACS NANO 2023; 17:5821-5833. [PMID: 36881690 DOI: 10.1021/acsnano.2c12418] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In this study, a fibriform electrochemical diode capable of performing rectifying, complementary logic and device protection functions for future e-textile circuit systems is fabricated. The diode was fabricated using a simple twisted assembly of metal/polymer semiconductor/ion gel coaxial microfibers and conducting microfiber electrodes. The fibriform diode exhibited a prominent asymmetrical current flow with a rectification ratio of over 102, and its performance was retained after repeated bending deformations and washings. Fundamental studies on the electrochemical interactions of polymer semiconductors with ions reveal that the Faradaic current generated in polymer semiconductors by electrochemical reactions results in an abrupt current increase under a forward bias, in which the threshold voltages of the device are determined by the oxidation or reduction potential of the polymer semiconductor. Textile-embedded full-wave rectifiers and logic gate circuits were implemented by simply integrating the fibriform diodes, exhibiting AC-to-DC signal conversion and logic operation functions, respectively. It was also confirmed that the proposed fibriform diode can suppress transient voltages and thus protect a low-voltage operational wearable e-textile circuit.
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Affiliation(s)
- Kwang-Hun Choi
- Center for Optoelectronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - Soo Jin Kim
- Center for Optoelectronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - Hyoungjun Kim
- Center for Optoelectronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- Division of Nano and Information Technology, KIST School, Korea University of Science and Technology of Korea (UST), Seoul 02792, Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
- Advanced Institute of Convergence Technology, Seoul National University, Suwon 16229, Republic of Korea
| | - Hyunjung Yi
- Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- Department of Materials Science and Engineering, YU-KIST Institute, Yonsei University, Seoul 03722, Republic of Korea
| | - Min-Chul Park
- Center for Optoelectronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Changsoon Choi
- Center for Optoelectronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Hyunsu Ju
- Center for Optoelectronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Jung Ah Lim
- Center for Optoelectronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- Division of Nano and Information Technology, KIST School, Korea University of Science and Technology of Korea (UST), Seoul 02792, Republic of Korea
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5
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Moshrefi R, Ryan K, Connors EP, Walsh JC, Merschrod E, Bodwell GJ, Stockmann TJ. Electrosynthesis of Au nanocluster embedded conductive polymer films at soft interfaces using dithiafulvenyl-functionalized pyrene. NANOSCALE 2023; 15:5834-5842. [PMID: 36861258 DOI: 10.1039/d2nr06519c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Nanoparticle (NP) embedded conductive polymer films are desirable platforms for electrocatalysis as well as biomedical and analytical applications. Increased catalytic and analytical performance is accompanied by concomitant decreases in NP size. Herein, highly reproducible electrogeneration of low dispersity Au nanocluster embedded ultra-thin (∼2 nm) conductive polymer films at a micro liquid|liquid interface is demonstrated. Confinement at a micropipette tip facilitates a heterogeneous electron transfer process across the interface between two immiscible electrolyte solutions (ITIES), between KAuCl4(aq) and a dithiafulvenyl-substituted pyrene monomer, 4,5-didecoxy-1,8-bis(dithiafulven-6-yl)pyrene (bis(DTF)pyrene), in oil, i.e., a w|o interface. At a large ITIES the reaction is spontaneous, rapid, and proceeds via transfer of AuCl4- to the oil phase, followed by homogeneous electron transfer generating uncontrolled polymer growth with larger (∼50 nm) Au nanoparticles (NPs). Thus, miniaturization facilitates external, potential control and limits the reaction pathway. Atomic (AFM) and Kelvin probe force microscopies (KPFM) imaged the topography and work function distribution of the as-prepared films. The latter was linked to nanocluster distribution.
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Affiliation(s)
- Reza Moshrefi
- Memorial University of Newfoundland, Core Science Facility, 45 Arctic Ave, St. John's, NL, Canada, A1C 5S7.
| | - Katelyn Ryan
- Memorial University of Newfoundland, Core Science Facility, 45 Arctic Ave, St. John's, NL, Canada, A1C 5S7.
| | - Evan P Connors
- Memorial University of Newfoundland, Core Science Facility, 45 Arctic Ave, St. John's, NL, Canada, A1C 5S7.
| | - Joshua C Walsh
- Memorial University of Newfoundland, Core Science Facility, 45 Arctic Ave, St. John's, NL, Canada, A1C 5S7.
| | - Erika Merschrod
- Memorial University of Newfoundland, Core Science Facility, 45 Arctic Ave, St. John's, NL, Canada, A1C 5S7.
| | - Graham J Bodwell
- Memorial University of Newfoundland, Core Science Facility, 45 Arctic Ave, St. John's, NL, Canada, A1C 5S7.
| | - Talia Jane Stockmann
- Memorial University of Newfoundland, Core Science Facility, 45 Arctic Ave, St. John's, NL, Canada, A1C 5S7.
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6
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Hamadani BH. 2.11 - Accurate characterization of indoor photovoltaic performance. JPHYS MATERIALS 2023; 6:10.1088/2515-7639/acc550. [PMID: 37965623 PMCID: PMC10644663 DOI: 10.1088/2515-7639/acc550] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2023]
Abstract
Abstract
Ambient energy harvesting has great potential to contribute to sustainable development and address growing environmental challenges. Converting waste energy from energy-intensive processes and systems (e.g. combustion engines and furnaces) is crucial to reducing their environmental impact and achieving net-zero emissions. Compact energy harvesters will also be key to powering the exponentially growing smart devices ecosystem that is part of the Internet of Things, thus enabling futuristic applications that can improve our quality of life (e.g. smart homes, smart cities, smart manufacturing, and smart healthcare). To achieve these goals, innovative materials are needed to efficiently convert ambient energy into electricity through various physical mechanisms, such as the photovoltaic effect, thermoelectricity, piezoelectricity, triboelectricity, and radiofrequency wireless power transfer. By bringing together the perspectives of experts in various types of energy harvesting materials, this Roadmap provides extensive insights into recent advances and present challenges in the field. Additionally, the Roadmap analyses the key performance metrics of these technologies in relation to their ultimate energy conversion limits. Building on these insights, the Roadmap outlines promising directions for future research to fully harness the potential of energy harvesting materials for green energy anytime, anywhere.
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7
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Georgiadou DG, Wijeyasinghe N, Solomeshch O, Tessler N, Anthopoulos TD. Radiofrequency Schottky Diodes Based on p-Doped Copper(I) Thiocyanate (CuSCN). ACS APPLIED MATERIALS & INTERFACES 2022; 14:29993-29999. [PMID: 35647869 PMCID: PMC9264318 DOI: 10.1021/acsami.1c22856] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Schottky diodes based on inexpensive materials that can be processed using simple manufacturing methods are of particular importance for the next generation of flexible electronics. Although a number of high-frequency n-type diodes and rectifiers have been demonstrated, the progress with p-type diodes is lagging behind, mainly due to the intrinsically low conductivities of existing p-type semiconducting materials that are compatible with low-temperature, flexible, substrate-friendly processes. Herein, we report on CuSCN Schottky diodes, where the semiconductor is processed from solution, featuring coplanar Al-Au nanogap electrodes (<15 nm), patterned via adhesion lithography. The abundant CuSCN material is doped with the molecular p-type dopant fluorofullerene C60F48 to improve the diode's operating characteristics. Rectifier circuits fabricated with the doped CuSCN/C60F48 diodes exhibit a 30-fold increase in the cutoff frequency as compared to pristine CuSCN diodes (from 140 kHz to 4 MHz), while they are able to deliver output voltages of >100 mV for a VIN = ±5 V at the commercially relevant frequency of 13.56 MHz. The enhanced diode and circuit performance is attributed to the improved charge transport across CuSCN induced by C60F48. The ensuing diode technology can be used in flexible complementary circuits targeting low-energy-budget applications for the emerging internet of things device ecosystem.
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Affiliation(s)
- Dimitra G. Georgiadou
- Electronics
and Computer Science, University of Southampton, Highfield Campus, Southampton SO17 1BJ, United Kingdom
- Department
of Physics, Imperial College London, Prince Consort Road, South Kensington, London SW7 2AZ, United Kingdom
| | - Nilushi Wijeyasinghe
- Department
of Physics, Imperial College London, Prince Consort Road, South Kensington, London SW7 2AZ, United Kingdom
| | - Olga Solomeshch
- The
Sarah and Moshe Zisapel Nano-Electronic Center, Department of Electrical
Engineering, Technion-Israel Institute of
Technology, Haifa 3200, Israel
| | - Nir Tessler
- The
Sarah and Moshe Zisapel Nano-Electronic Center, Department of Electrical
Engineering, Technion-Israel Institute of
Technology, Haifa 3200, Israel
| | - Thomas D. Anthopoulos
- Department
of Physics, Imperial College London, Prince Consort Road, South Kensington, London SW7 2AZ, United Kingdom
- King
Abdullah University of Science and Technology (KAUST), Division of Physical Sciences and Engineering, Thuwal 23955-6900, Saudi Arabia
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8
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Kwon HJ, Tang X, Kim S, Li Z, Wang R, Park BH, Kim C, Kim S, Hong J, Ryu KY, Choi HH, An TK, Lee J, Kim SH. Molecular Engineering of Printed Semiconducting Blends to Develop Organic Integrated Circuits: Crystallization, Charge Transport, and Device Application Analyses. ACS APPLIED MATERIALS & INTERFACES 2022; 14:23678-23691. [PMID: 35544719 DOI: 10.1021/acsami.2c02032] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Solution-based printing has contributed to the facile deposition of various types of materials, including the building blocks of printed electronics. In particular, solution-processable organic semiconductors (OSCs) are regarded as one of the most fascinating candidates for the fabrication of printed electronics. Herein, we report electrohydrodynamic (EHD) jet-printed p- and n-type OSCs, namely 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-PEN) and 6,13-bis((triisopropylsilyl)ethynyl)-5,7,12,14-tetraazapentacene (TIPS-TAP), and their use as single-OSC layers and as OSC mixed p-n layers to fabricate solution-processed p-, n-, and ambipolar-type organic field-effect transistors (OFETs). Use of the dragging mode of EHD jet printing, a process driven under a low electrostatic field with a short nozzle-to-substrate distance, was found to provide favorable conditions for growth of TIPS-PEN and TIPS-TAP crystals. In this way, the similar molecular structures of TIPS-PEN and TIPS-TAP yielded a homogeneous solid solution and showed ambipolar transport properties in OFETs. Therefore, the combination of single- and mixed-OSC layers enabled the preparation of various charge-transported devices from unit to integrated devices (NOT, NAND, NOR, and multivalued logic). Therefore, this fabrication technology can be useful for assisting in the production of OSC layers for practical applications in the near future.
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Affiliation(s)
- Hyeok-Jin Kwon
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Korea
| | - Xiaowu Tang
- College of Material and Chemical Engineering, Zhengzhou University of Light Industry, Zhengzhou, Henan 450002, China
| | - Seonghyeon Kim
- Department of IT·Energy Convergence (BK21 Four), Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Zhijun Li
- School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
| | - Rixuan Wang
- School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
| | - Byung Ho Park
- EMNI Co., Ltd., 14, Seocheon-ro 201beon-gil, Yongin 17111, Republic of Korea
| | - Cheulhwan Kim
- Department of IT·Energy Convergence (BK21 Four), Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Soyeon Kim
- Department of IT·Energy Convergence (BK21 Four), Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Jisu Hong
- Research Institute for Green Energy Convergence Techonology, Gyeongsang National University, Jinju 52828, Republic of Korea
- Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, United States
| | - Ka Yeon Ryu
- Research Institute for Green Energy Convergence Techonology, Gyeongsang National University, Jinju 52828, Republic of Korea
| | - Hyun Ho Choi
- Research Institute for Green Energy Convergence Techonology, Gyeongsang National University, Jinju 52828, Republic of Korea
- Department of Materials Engineering and Convergence Technology, Gyeongsang National University, Jinju 52828, Korea
| | - Tae Kyu An
- Department of IT·Energy Convergence (BK21 Four), Korea National University of Transportation, Chungju 27469, Republic of Korea
- Department of Polymer Science and Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea
- Chemical Industry Institute, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Jihoon Lee
- Department of IT·Energy Convergence (BK21 Four), Korea National University of Transportation, Chungju 27469, Republic of Korea
- Department of Polymer Science and Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea
- Chemical Industry Institute, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Se Hyun Kim
- School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
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9
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Yang Y, Schäfer C, Börjesson K. Detachable all-carbon-linked 3D covalent organic framework films for semiconductor/COF heterojunctions by continuous flow synthesis. Chem 2022. [DOI: 10.1016/j.chempr.2022.05.003] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/03/2022]
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10
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Kim Y, Kim G, Ding B, Jeong D, Lee I, Park S, Kim BJ, McCulloch I, Heeney M, Yoon MH. High-Current-Density Organic Electrochemical Diodes Enabled by Asymmetric Active Layer Design. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107355. [PMID: 34852181 DOI: 10.1002/adma.202107355] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2021] [Revised: 11/12/2021] [Indexed: 06/13/2023]
Abstract
Owing to their outstanding electrical/electrochemical performance, operational stability, mechanical flexibility, and decent biocompatibility, organic mixed ionic-electronic conductors have shown great potential as implantable electrodes for neural recording/stimulation and as active channels for signal switching/amplifying transistors. Nonetheless, no studies exist on a general design rule for high-performance electrochemical diodes, which are essential for highly functional circuit architectures. In this work, generalizable electrochemical diodes with a very high current density over 30 kA cm-2 are designed by introducing an asymmetric active layer based on organic mixed ionic-electronic conductors. The underlying mechanism on polarity-sensitive balanced ionic doping/dedoping is elucidated by numerical device analysis and in operando spectroelectrochemical potential mapping, while the general material requirements for electrochemical diode operation are deduced using various types of conjugated polymers. In parallel, analog signal rectification and digital logic processing circuits are successfully demonstrated to show the broad impact of circuits incorporating organic electrochemical diodes. It is expected that organic electrochemical diodes will play vital roles in realizing multifunctional soft bioelectronic circuitry in combination with organic electrochemical transistors.
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Affiliation(s)
- Youngseok Kim
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Gunwoo Kim
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Bowen Ding
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK
| | - Dahyun Jeong
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Republic of Korea
| | - Inho Lee
- Department of Electrical and Computer Engineering, Ajou University, Suwon, 16499, Republic of Korea
| | - Sungjun Park
- Department of Electrical and Computer Engineering, Ajou University, Suwon, 16499, Republic of Korea
| | - Bumjoon J Kim
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Republic of Korea
| | - Iain McCulloch
- KAUST Solar Center, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
- Department of Chemistry, University of Oxford, Oxford, OX1 3TA, UK
| | - Martin Heeney
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK
| | - Myung-Han Yoon
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
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11
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Matsuhisa N, Niu S, O'Neill SJK, Kang J, Ochiai Y, Katsumata T, Wu HC, Ashizawa M, Wang GJN, Zhong D, Wang X, Gong X, Ning R, Gong H, You I, Zheng Y, Zhang Z, Tok JBH, Chen X, Bao Z. High-frequency and intrinsically stretchable polymer diodes. Nature 2021; 600:246-252. [PMID: 34880427 DOI: 10.1038/s41586-021-04053-6] [Citation(s) in RCA: 86] [Impact Index Per Article: 28.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/07/2021] [Accepted: 09/24/2021] [Indexed: 11/09/2022]
Abstract
Skin-like intrinsically stretchable soft electronic devices are essential to realize next-generation remote and preventative medicine for advanced personal healthcare1-4. The recent development of intrinsically stretchable conductors and semiconductors has enabled highly mechanically robust and skin-conformable electronic circuits or optoelectronic devices2,5-10. However, their operating frequencies have been limited to less than 100 hertz, which is much lower than that required for many applications. Here we report intrinsically stretchable diodes-based on stretchable organic and nanomaterials-capable of operating at a frequency as high as 13.56 megahertz. This operating frequency is high enough for the wireless operation of soft sensors and electrochromic display pixels using radiofrequency identification in which the base-carrier frequency is 6.78 megahertz or 13.56 megahertz. This was achieved through a combination of rational material design and device engineering. Specifically, we developed a stretchable anode, cathode, semiconductor and current collector that can satisfy the strict requirements for high-frequency operation. Finally, we show the operational feasibility of our diode by integrating it with a stretchable sensor, electrochromic display pixel and antenna to realize a stretchable wireless tag. This work is an important step towards enabling enhanced functionalities and capabilities for skin-like wearable electronics.
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Affiliation(s)
- Naoji Matsuhisa
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA.,Innovative Center for Flexible Devices (iFLEX), School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.,Department of Electronics and Electrical Engineering, Keio University, Yokohama, Japan.,Japan Science and Technology Agency, PRESTO, Kawaguchi, Japan
| | - Simiao Niu
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
| | | | - Jiheong Kang
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
| | - Yuto Ochiai
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
| | - Toru Katsumata
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA.,Corporate Research and Development, Performance Materials Technology Center, Asahi Kasei Corporation, Fuji, Japan
| | - Hung-Chin Wu
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
| | - Minoru Ashizawa
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA.,Department of Materials Science and Engineering, Tokyo Institute of Technology, Tokyo, Japan
| | | | - Donglai Zhong
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
| | - Xuelin Wang
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA.,School of Medical Science and Engineering, Beihang University, Beijing, China
| | - Xiwen Gong
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
| | - Rui Ning
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA
| | - Huaxin Gong
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
| | - Insang You
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
| | - Yu Zheng
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
| | - Zhitao Zhang
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
| | - Jeffrey B-H Tok
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
| | - Xiaodong Chen
- Innovative Center for Flexible Devices (iFLEX), School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Zhenan Bao
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA.
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12
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Molazemhosseini A, Viola FA, Berger FJ, Zorn NF, Zaumseil J, Caironi M. A Rapidly Stabilizing Water-Gated Field-Effect Transistor Based on Printed Single-Walled Carbon Nanotubes for Biosensing Applications. ACS APPLIED ELECTRONIC MATERIALS 2021; 3:3106-3113. [PMID: 34485915 PMCID: PMC8411763 DOI: 10.1021/acsaelm.1c00332] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/08/2021] [Accepted: 06/16/2021] [Indexed: 06/13/2023]
Abstract
Biosensors are expected to revolutionize disease management through provision of low-cost diagnostic platforms for molecular and pathogenic detection with high sensitivity and short response time. In this context, there has been an ever-increasing interest in using electrolyte-gated field-effect transistors (EG-FETs) for biosensing applications owing to their expanding potential of being employed for label-free detection of a broad range of biomarkers with high selectivity and sensitivity while operating at sub-volt working potentials. Although organic semiconductors have been widely utilized as the channel in EG-FETs, primarily due to their compatibility with cost-effective low-temperature solution-processing fabrication techniques, alternative carbon-based platforms have the potential to provide similar advantages with improved electronic performances. Here, we propose the use of inkjet-printed polymer-wrapped monochiral single-walled carbon nanotubes (s-SWCNTs) for the channel of EG-FETs in an aqueous environment. In particular, we show that our EG-CNTFETs require only an hour of stabilization before producing a highly stable response suitable for biosensing, with a drastic time reduction with respect to the most exploited organic semiconductor for biosensors. As a proof-of-principle, we successfully employed our water-gated device to detect the well-known biotin-streptavidin binding event.
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Affiliation(s)
- Alireza Molazemhosseini
- Center
for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia, Via Giovanni Pascoli, 70/3, 20133 Milano, Italy
| | - Fabrizio Antonio Viola
- Center
for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia, Via Giovanni Pascoli, 70/3, 20133 Milano, Italy
| | - Felix J. Berger
- Institute
for Physical Chemistry and Centre for Advanced Materials, Universitaẗ Heidelberg, D-69120 Heidelberg, Germany
| | - Nicolas F. Zorn
- Institute
for Physical Chemistry and Centre for Advanced Materials, Universitaẗ Heidelberg, D-69120 Heidelberg, Germany
| | - Jana Zaumseil
- Institute
for Physical Chemistry and Centre for Advanced Materials, Universitaẗ Heidelberg, D-69120 Heidelberg, Germany
| | - Mario Caironi
- Center
for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia, Via Giovanni Pascoli, 70/3, 20133 Milano, Italy
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13
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Realization and training of an inverter-based printed neuromorphic computing system. Sci Rep 2021; 11:9554. [PMID: 33953238 PMCID: PMC8099883 DOI: 10.1038/s41598-021-88396-0] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/21/2020] [Accepted: 04/05/2021] [Indexed: 11/08/2022] Open
Abstract
Emerging applications in soft robotics, wearables, smart consumer products or IoT-devices benefit from soft materials, flexible substrates in conjunction with electronic functionality. Due to high production costs and conformity restrictions, rigid silicon technologies do not meet application requirements in these new domains. However, whenever signal processing becomes too comprehensive, silicon technology must be used for the high-performance computing unit. At the same time, designing everything in flexible or printed electronics using conventional digital logic is not feasible yet due to the limitations of printed technologies in terms of performance, power and integration density. We propose to rather use the strengths of neuromorphic computing architectures consisting in their homogeneous topologies, few building blocks and analog signal processing to be mapped to an inkjet-printed hardware architecture. It has remained a challenge to demonstrate non-linear elements besides weighted aggregation. We demonstrate in this work printed hardware building blocks such as inverter-based comprehensive weight representation and resistive crossbars as well as printed transistor-based activation functions. In addition, we present a learning algorithm developed to train the proposed printed NCS architecture based on specific requirements and constraints of the technology.
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14
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Yao ZF, Wang JY, Pei J. High-performance polymer field-effect transistors: from the perspective of multi-level microstructures. Chem Sci 2020; 12:1193-1205. [PMID: 34163881 PMCID: PMC8179153 DOI: 10.1039/d0sc06497a] [Citation(s) in RCA: 25] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/26/2020] [Accepted: 12/23/2020] [Indexed: 01/13/2023] Open
Abstract
The multi-level microstructure of conjugated polymers is the most critical parameter determining the charge transport property in field-effect transistors (FETs). However, controlling the hierarchical microstructures and the structural evolution remains a significant challenge. In this perspective, we discuss the key aspects of multi-level microstructures of conjugated polymers towards high-performance FETs. We highlight the recent progress in the molecular structures, solution-state aggregation, and polymer crystal structures, representing the multi-level microstructures of conjugated polymers. By tuning polymer hierarchical microstructures, we attempt to provide several guidelines for developing high-performance polymer FETs and polymer electronics.
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Affiliation(s)
- Ze-Fan Yao
- Beijing National Laboratory for Molecular Sciences (BNLMS), Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Center of Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering, Peking University Beijing 100871 China
| | - Jie-Yu Wang
- Beijing National Laboratory for Molecular Sciences (BNLMS), Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Center of Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering, Peking University Beijing 100871 China
| | - Jian Pei
- Beijing National Laboratory for Molecular Sciences (BNLMS), Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Center of Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering, Peking University Beijing 100871 China
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