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Lee DY, Choi DE, Ahn Y, Kye H, Kim MS, Kim BG. Sequential Cascade Doping of Conjugated-Polymer-Wrapped Carbon Nanotubes for Highly Electrically Conductive Platforms. Polymers (Basel) 2024; 16:1884. [PMID: 39000739 PMCID: PMC11244060 DOI: 10.3390/polym16131884] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/30/2024] [Revised: 06/25/2024] [Accepted: 06/29/2024] [Indexed: 07/17/2024] Open
Abstract
To explore a highly conductive flexible platform, this study develops PIDF-BT@SWCNT by wrapping single-walled carbon nanotubes (SWCNTs) with a conjugated polymer, PIDF-BT, known for its effective doping properties. By evaluating the doping behaviors of various dopants on PIDF-BT, appropriate dopant combinations for cascade doping are selected to improve the doping efficiency of PIDF-BT@SWCNT. Specifically, using F4TCNQ or F6TCNNQ as the first dopant, followed by AuCl3 as the second dopant, demonstrates remarkable doping efficiency, surpassing that of the individual dopants and yielding an exceptional electrical conductivity exceeding 6000 S/cm. Characterization using X-ray photoelectron spectroscopy and Raman spectroscopy elucidates the doping mechanism, revealing an increase in the proportion of electron-donating atoms and the ratio of quinoid structures upon F4TCNQ/AuCl3 cascade doping. These findings offer insights into optimizing dopant combinations for cascade doping, showcasing its advantages in enhancing doping efficiency and resulting electrical conductivity compared with single dopant processes.
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Affiliation(s)
- Da Young Lee
- Department of Materials Science and Engineering, Konkuk University, 120 Neungdong-ro, Seoul 05029, Republic of Korea;
| | - Da Eun Choi
- Department of Organic and Nano System Engineering, Konkuk University, 120 Neungdong-ro, Seoul 05029, Republic of Korea; (D.E.C.); (Y.A.); (H.K.); (M.S.K.)
| | - Yejin Ahn
- Department of Organic and Nano System Engineering, Konkuk University, 120 Neungdong-ro, Seoul 05029, Republic of Korea; (D.E.C.); (Y.A.); (H.K.); (M.S.K.)
| | - Hyojin Kye
- Department of Organic and Nano System Engineering, Konkuk University, 120 Neungdong-ro, Seoul 05029, Republic of Korea; (D.E.C.); (Y.A.); (H.K.); (M.S.K.)
| | - Min Seon Kim
- Department of Organic and Nano System Engineering, Konkuk University, 120 Neungdong-ro, Seoul 05029, Republic of Korea; (D.E.C.); (Y.A.); (H.K.); (M.S.K.)
| | - Bong-Gi Kim
- Department of Materials Science and Engineering, Konkuk University, 120 Neungdong-ro, Seoul 05029, Republic of Korea;
- Department of Organic and Nano System Engineering, Konkuk University, 120 Neungdong-ro, Seoul 05029, Republic of Korea; (D.E.C.); (Y.A.); (H.K.); (M.S.K.)
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2
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Kumar V, Shukla A, Kaur G, Kharbanda N, Kaliyamoorthy JB, Ghosh HN. Unraveling Defect-Mediated Enhancement of Transient Photoconductivity and Slower Carrier's Mobility Decay in Cu-Doped Cs 2AgBiBr 6 Nanocrystals Using Ultrafast Pump-Probe Spectroscopy. J Phys Chem Lett 2024; 15:6575-6584. [PMID: 38885443 DOI: 10.1021/acs.jpclett.4c01079] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/20/2024]
Abstract
Lead-free double perovskite nanocrystals (A2B'(III)B″(I)X6 NCs) address the instability and toxicity concerns of lead-based counterparts, but their device performance is limited by subpar absorption and unexplored carrier dynamics. Impurity ion doping offers a route to tune electrical conductivity and charge carrier transport. Herein, we synthesized Cu-doped Cs2AgBiBr6 (CABB) nanocrystals using a hot-injection approach and investigated the charge carrier's dynamics through ultrafast pump-probe spectroscopy. Copper introduction into the CABB lattice enhanced absorption in the near-infrared region and introduced sub-band gap defect states in CABB NCs. The transient absorption study revealed a faster bleach decay with increased copper doping, as a result of charge transfer from the conduction band to copper defect states. Also, an optical pump terahertz probe study displays higher photoconductivity and mobility in Cu-doped CABB NCs. Slower mobility decay in Cu-doped systems was attributed to the charge carrier's entrapment at the defect state. These findings suggest that copper-doped CABB is a superior contender for optoelectronic applications over conventional CABB.
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Affiliation(s)
- Vikas Kumar
- Institute of Nano Science and Technology, Mohali, Punjab 140306, India
| | - Ayushi Shukla
- Institute of Nano Science and Technology, Mohali, Punjab 140306, India
| | - Gurpreet Kaur
- Institute of Nano Science and Technology, Mohali, Punjab 140306, India
| | - Nitika Kharbanda
- Institute of Nano Science and Technology, Mohali, Punjab 140306, India
| | | | - Hirendra N Ghosh
- School of Chemical Sciences, National Institute of Science Education and Research (NISER), Bhubaneswar, Odisha 752050, India
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3
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Guo Y, Li J, Zhan X, Wang C, Li M, Zhang B, Wang Z, Liu Y, Yang K, Wang H, Li W, Gu P, Luo Z, Liu Y, Liu P, Chen B, Watanabe K, Taniguchi T, Chen XQ, Qin C, Chen J, Sun D, Zhang J, Wang R, Liu J, Ye Y, Li X, Hou Y, Zhou W, Wang H, Han Z. Van der Waals polarity-engineered 3D integration of 2D complementary logic. Nature 2024; 630:346-352. [PMID: 38811731 PMCID: PMC11168927 DOI: 10.1038/s41586-024-07438-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 04/18/2024] [Indexed: 05/31/2024]
Abstract
Vertical three-dimensional integration of two-dimensional (2D) semiconductors holds great promise, as it offers the possibility to scale up logic layers in the z axis1-3. Indeed, vertical complementary field-effect transistors (CFETs) built with such mixed-dimensional heterostructures4,5, as well as hetero-2D layers with different carrier types6-8, have been demonstrated recently. However, so far, the lack of a controllable doping scheme (especially p-doped WSe2 (refs. 9-17) and MoS2 (refs. 11,18-28)) in 2D semiconductors, preferably in a stable and non-destructive manner, has greatly impeded the bottom-up scaling of complementary logic circuitries. Here we show that, by bringing transition metal dichalcogenides, such as MoS2, atop a van der Waals (vdW) antiferromagnetic insulator chromium oxychloride (CrOCl), the carrier polarity in MoS2 can be readily reconfigured from n- to p-type via strong vdW interfacial coupling. The consequential band alignment yields transistors with room-temperature hole mobilities up to approximately 425 cm2 V-1 s-1, on/off ratios reaching 106 and air-stable performance for over one year. Based on this approach, vertically constructed complementary logic, including inverters with 6 vdW layers, NANDs with 14 vdW layers and SRAMs with 14 vdW layers, are further demonstrated. Our findings of polarity-engineered p- and n-type 2D semiconductor channels with and without vdW intercalation are robust and universal to various materials and thus may throw light on future three-dimensional vertically integrated circuits based on 2D logic gates.
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Affiliation(s)
- Yimeng Guo
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Anhui, China
| | - Jiangxu Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Xuepeng Zhan
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China
| | - Chunwen Wang
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Min Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, China
| | - Biao Zhang
- School of Materials, Shenzhen Campus of Sun Yat-Sen University, Shenzhen, China
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing, China
| | - Zirui Wang
- School of Integrated Circuits, Peking University, Beijing, China
| | - Yueyang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences Beijing, Beijing, China
| | - Kaining Yang
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China
| | - Hai Wang
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China
| | - Wanying Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Pingfan Gu
- Collaborative Innovation Center of Quantum Matter, Beijing, China
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, China
| | - Zhaoping Luo
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Yingjia Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Anhui, China
| | - Peitao Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Bo Chen
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Xing-Qiu Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Chengbing Qin
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan, China
| | - Jiezhi Chen
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China
| | - Dongming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Jing Zhang
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China
| | - Runsheng Wang
- School of Integrated Circuits, Peking University, Beijing, China
| | - Jianpeng Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, China
- Liaoning Academy of Materials, Shenyang, China
| | - Yu Ye
- Collaborative Innovation Center of Quantum Matter, Beijing, China
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, China
- Liaoning Academy of Materials, Shenyang, China
| | - Xiuyan Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
- Liaoning Academy of Materials, Shenyang, China.
| | - Yanglong Hou
- School of Materials, Shenzhen Campus of Sun Yat-Sen University, Shenzhen, China.
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing, China.
| | - Wu Zhou
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, People's Republic of China.
| | - Hanwen Wang
- Liaoning Academy of Materials, Shenyang, China.
| | - Zheng Han
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China.
- Liaoning Academy of Materials, Shenyang, China.
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4
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Luo Y, Lu H, Huang J, He L, Chen H, Yuan C, Xu Y, Zeng B, Dai L. A Molecular Coordination Strategy for Regulating the Interface of MoS 2 Field Effect Transistors. J Am Chem Soc 2024; 146:9709-9720. [PMID: 38546406 DOI: 10.1021/jacs.3c13696] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
Chemically modifying monolayer two-dimensional transition metal dichalcogenides (TMDs) with organic molecules provides a wide range of possibilities to regulate the electronic and optoelectronic performance of both materials and devices. However, it remains challenging to chemically attach organic molecules to monolayer TMDs without damaging their crystal structures. Herein, we show that the Mo atoms of monolayer MoS2 (1L-MoS2) in defect states can coordinate with both catechol and 1,10-phenanthroline (Phen) groups, affording a facile route to chemically modifying 1L-MoS2. Through the design of two isomeric molecules (LA2 and LA5) comprising catechol and Phen groups, we show that attaching organic molecules to Mo atoms via coordinative bonds has no negative effect on the crystal structure of 1L-MoS2. Both theoretical calculation and experiment results indicate that the coordinative strategy is beneficial for (i) repairing sulfur vacancies and passivating defects; (ii) achieving a long-term and stable n-doping effect; and (iii) facilitating the electron transfer. Field effect transistors (FETs) based on the coordinatively modified 1L-MoS2 show high electron mobilities up to 120.3 cm2 V-1 s-1 with impressive current on/off ratios over 109. Our results indicate that coordinatively attaching catechol- or Phen-bearing molecules may be a general method for the nondestructive modification of TMDs.
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5
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Wang ST, Lin YL, Lee LR, Chang YC, Tseng R, Weng TT, He YY, Pan YY, Chou TT, Chen JT, Lien DH. Reversible Charge Transfer Doping in Atomically Thin In 2O 3 by Viologens. ACS APPLIED MATERIALS & INTERFACES 2024; 16:5302-5307. [PMID: 38156405 DOI: 10.1021/acsami.3c15809] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/30/2023]
Abstract
Atomically thin oxide semiconductors are emerging as potential materials for their potentiality in monolithic 3D integration and sensor applications. In this study, a charge transfer method employing viologen, an organic compound with exceptional reduction potential among n-type organics, is presented to modulate the carrier concentration in atomically thin In2O3 without the need of annealing. This study highlights the critical role of channel thickness on doping efficiency, revealing that viologen charge transfer doping is increasingly pronounced in thinner channels owing to their increased surface-to-volume ratio. Upon viologen doping, an electron sheet density of 6.8 × 1012 cm-2 is achieved in 2 nm In2O3 back gate device while preserving carrier mobility. Moreover, by the modification of the functional groups, viologens can be conveniently removed with acetone and an ultrasonic cleaner, making the viologen treatment a reversible process. Based on this doping scheme, we demonstrate an n-type metal oxide semiconductor inverter with viologen-doped In2O3, exhibiting a voltage gain of 26 at VD = 5 V. This complementary pairing of viologen and In2O3 offers ease of control over the carrier concentration, making it suitable for the next-generation electronic applications.
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Affiliation(s)
- Sung-Tsun Wang
- Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
- Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yu-Liang Lin
- Department of Applied Chemistry, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Lin-Ruei Lee
- Department of Applied Chemistry, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yu-Cheng Chang
- Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Robert Tseng
- Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Tzu-Ting Weng
- Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yan-Yi He
- Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
- Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yi-Yu Pan
- Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Tsung-Te Chou
- Taiwan Instrument Research Institute, National Applied Research Laboratories, Hsinchu 30010, Taiwan
| | - Jiun-Tai Chen
- Department of Applied Chemistry, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Der-Hsien Lien
- Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
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6
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Zou T, Kim HJ, Kim S, Liu A, Choi MY, Jung H, Zhu H, You I, Reo Y, Lee WJ, Kim YS, Kim CJ, Noh YY. High-Performance Solution-Processed 2D P-Type WSe 2 Transistors and Circuits through Molecular Doping. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208934. [PMID: 36418776 DOI: 10.1002/adma.202208934] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2022] [Revised: 11/05/2022] [Indexed: 06/16/2023]
Abstract
Semiconducting ink based on 2D single-crystal flakes with dangling-bond-free surfaces enables the implementation of high-performance devices on form-free substrates by cost-effective and scalable printing processes. However, the lack of solution-processed p-type 2D semiconducting inks with high mobility is an obstacle to the development of complementary integrated circuits. Here, a versatile strategy of doping with Br2 is reported to enhance the hole mobility by orders of magnitude for p-type transistors with 2D layered materials. Br2 -doped WSe2 transistors show a field-effect hole mobility of more than 27 cm2 V-1 s-1 , and a high on/off current ratio of ≈107 , and exhibits excellent operational stability during the on-off switching, cycling, and bias stressing testing. Moreover, complementary inverters composed of patterned p-type WSe2 and n-type MoS2 layered films are demonstrated with an ultra-high gain of 1280 under a driving voltage (VDD ) of 7 V. This work unveils the high potential of solution-processed 2D semiconductors with low-temperature processability for flexible devices and monolithic circuitry.
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Affiliation(s)
- Taoyu Zou
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Hyun-Jun Kim
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Soonhyo Kim
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
- Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea
| | - Ao Liu
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Min-Yeong Choi
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Haksoon Jung
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Huihui Zhu
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Insang You
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Youjin Reo
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Woo-Ju Lee
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Yong-Sung Kim
- Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea
- Department of Nano Science, University of Science and Technology, Daejeon, 34113, Republic of Korea
| | - Cheol-Joo Kim
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Yong-Young Noh
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
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7
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Wang S, Liu X, Xu M, Liu L, Yang D, Zhou P. Two-dimensional devices and integration towards the silicon lines. NATURE MATERIALS 2022; 21:1225-1239. [PMID: 36284239 DOI: 10.1038/s41563-022-01383-2] [Citation(s) in RCA: 50] [Impact Index Per Article: 25.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/08/2022] [Accepted: 09/14/2022] [Indexed: 06/16/2023]
Abstract
Despite technical efforts and upgrades, advances in complementary metal-oxide-semiconductor circuits have become unsustainable in the face of inherent silicon limits. New materials are being sought to compensate for silicon deficiencies, and two-dimensional materials are considered promising candidates due to their atomically thin structures and exotic physical properties. However, a potentially applicable method for incorporating two-dimensional materials into silicon platforms remains to be illustrated. Here we try to bridge two-dimensional materials and silicon technology, from integrated devices to monolithic 'on-silicon' (silicon as the substrate) and 'with-silicon' (silicon as a functional component) circuits, and discuss the corresponding requirements for material synthesis, device design and circuitry integration. Finally, we summarize the role played by two-dimensional materials in the silicon-dominated semiconductor industry and suggest the way forward, as well as the technologies that are expected to become mainstream in the near future.
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Affiliation(s)
- Shuiyuan Wang
- Shanghai Key Lab for Future Computing Hardware and System, School of Microelectronics, Fudan University, Shanghai, China
| | - Xiaoxian Liu
- Shanghai Key Lab for Future Computing Hardware and System, School of Microelectronics, Fudan University, Shanghai, China
| | - Mingsheng Xu
- State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics & Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Liwei Liu
- Frontier Institute of Chip and System & Qizhi Institute, Fudan University, Shanghai, China
| | - Deren Yang
- State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics & Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Peng Zhou
- Shanghai Key Lab for Future Computing Hardware and System, School of Microelectronics, Fudan University, Shanghai, China.
- Frontier Institute of Chip and System & Qizhi Institute, Fudan University, Shanghai, China.
- Hubei Yangtze Memory Laboratories, Wuhan, China.
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8
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Cho K, Lee T, Chung S. Inkjet printing of two-dimensional van der Waals materials: a new route towards emerging electronic device applications. NANOSCALE HORIZONS 2022; 7:1161-1176. [PMID: 35894100 DOI: 10.1039/d2nh00162d] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) van der Waals (vdW) materials are considered one of the most promising candidates to realize emerging electrical applications. Although until recently, much effort has been dedicated to demonstrating high-performance single 2D vdW devices, associated with rapid progress in 2D vdW materials, demands for their large-scale practical applications have noticeably increased from a manufacturing perspective. Drop-on-demand inkjet printing can be the most feasible solution by exploiting the advantages of layered 2D contacts and advanced 2D vdW ink formulations. This review presents recent achievements in inkjet-printed 2D vdW material-based device applications. A brief introduction to 2D vdW materials and inkjet printing principles, followed by various ink formulation methods, is first presented. Then, the state-of-the-art inkjet-printed 2D vdW device applications and their remaining technical issues are highlighted. Finally, prospects and challenges to be overcome to demonstrate fully inkjet-printed, high-performance 2D vdW devices are also discussed.
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Affiliation(s)
- Kyungjune Cho
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea.
| | - Takhee Lee
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Seungjun Chung
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea.
- KHU-KIST Department of Converging Science and Technology, Kyung Hee University, Seoul, 02447, Korea
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9
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Jang J, Kim JK, Shin J, Kim J, Baek KY, Park J, Park S, Kim YD, Parkin SSP, Kang K, Cho K, Lee T. Reduced dopant-induced scattering in remote charge-transfer-doped MoS 2 field-effect transistors. SCIENCE ADVANCES 2022; 8:eabn3181. [PMID: 36129985 PMCID: PMC9491718 DOI: 10.1126/sciadv.abn3181] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Accepted: 08/10/2022] [Indexed: 06/02/2023]
Abstract
Efficient doping for modulating electrical properties of two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors is essential for meeting the versatile requirements for future electronic and optoelectronic devices. Because doping of semiconductors, including TMDCs, typically involves generation of charged dopants that hinder charge transport, tackling Coulomb scattering induced by the externally introduced dopants remains a key challenge in achieving ultrahigh mobility 2D semiconductor systems. In this study, we demonstrated remote charge transfer doping by simply inserting a hexagonal boron nitride layer between MoS2 and solution-deposited n-type dopants, benzyl viologen. A quantitative analysis of temperature-dependent charge transport in remotely doped devices supports an effective suppression of the dopant-induced scattering relative to the conventional direct doping method. Our mechanistic investigation of the remote doping method promotes the charge transfer strategy as a promising method for material-level tailoring of electrical and optoelectronic devices based on TMDCs.
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Affiliation(s)
- Juntae Jang
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
| | - Jae-Keun Kim
- Max-Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Saale, Germany
| | - Jiwon Shin
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
| | - Jaeyoung Kim
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
| | - Kyeong-Yoon Baek
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
| | - Jaehyoung Park
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
| | - Seungmin Park
- Department of Physics, Kyung Hee University, Seoul 02447, Korea
| | - Young Duck Kim
- Department of Physics, Kyung Hee University, Seoul 02447, Korea
| | - Stuart S. P. Parkin
- Max-Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Saale, Germany
| | - Keehoon Kang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Korea
- Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Kyungjune Cho
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea
| | - Takhee Lee
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
- Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
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10
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Reed-Lingenfelter SN, Chen Y, Yarali M, Charboneau DJ, Curley JB, Hynek DJ, Wang M, Williams NL, Hazari N, Quek SY, Cha JJ. Compact Super Electron-Donor to Monolayer MoS 2. NANO LETTERS 2022; 22:4501-4508. [PMID: 35609247 DOI: 10.1021/acs.nanolett.2c01167] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The surface functionalization of two-dimensional (2D) materials with organic electron donors (OEDs) is a powerful tool to modulate the electronic properties of the material. Here we report a novel molecular dopant, Me-OED, that demonstrates record-breaking molecular doping to MoS2, achieving a carrier density of 1.10 ± 0.37 × 1014 cm-2 at optimal functionalization conditions; the achieved carrier density is much higher than those by other OEDs such as benzyl viologen and an OED based on 4,4'-bipyridine. This impressive doping power is attributed to the compact size of Me-OED, which leads to high surface coverage on MoS2. To confirm, we study tBu-OED, which has an identical reduction potential to Me-OED but is significantly larger. Using field-effect transistor measurements and spectroscopic characterization, we estimate the doping powers of Me- and tBu-OED are 0.22-0.44 and 0.11 electrons per molecule, respectively, in good agreement with calculations. Our results demonstrate that the small size of Me-OED is critical to maximizing the surface coverage and molecular interactions with MoS2, enabling us to achieve unprecedented doping of MoS2.
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Affiliation(s)
- Serrae N Reed-Lingenfelter
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
- Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, United States
| | - Yifeng Chen
- Department of Physics, National University of Singapore, 117551, Singapore
| | - Milad Yarali
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
- Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, United States
| | - David J Charboneau
- Department of Chemistry, Yale University, New Haven, Connecticut 06511, United States
| | - Julia B Curley
- Department of Chemistry, Yale University, New Haven, Connecticut 06511, United States
| | - David J Hynek
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
- Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, United States
| | - Mengjing Wang
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
- Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, United States
| | - Natalie L Williams
- Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, United States
- Department of Chemistry, Yale University, New Haven, Connecticut 06511, United States
| | - Nilay Hazari
- Department of Chemistry, Yale University, New Haven, Connecticut 06511, United States
| | - Su Ying Quek
- Department of Physics, National University of Singapore, 117551, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, Block S14, Level 6, 6 Science Drive 2, 117546, Singapore
| | - Judy J Cha
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
- Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, United States
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Youn S, Kim J, Moon H, Kim JK, Jang J, Chang J, Lee T, Kang K, Lee W. Enhanced Thermoelectric Power Factor in Carrier-Type-Controlled Platinum Diselenide Nanosheets by Molecular Charge-Transfer Doping. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200818. [PMID: 35485322 DOI: 10.1002/smll.202200818] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2022] [Revised: 03/21/2022] [Indexed: 06/14/2023]
Abstract
2D transition metal dichalcogenides (TMDCs) have revealed great promise for realizing electronics at the nanoscale. Despite significant interests that have emerged for their thermoelectric applications due to their predicted high thermoelectric figure of merit, suitable doping methods to improve and optimize the thermoelectric power factor of TMDCs have not been studied extensively. In this respect, molecular charge-transfer doping is utilized effectively in TMDC-based nanoelectronic devices due to its facile and controllable nature owing to a diverse range of molecular designs available for modulating the degree of charge transfer. In this study, the power of molecular charge-transfer doping is demonstrated in controlling the carrier-type (n- and p-type) and thermoelectric power factor in platinum diselenide (PtSe2 ) nanosheets. This, combined with the tunability in the band overlap by changing the thickness of the nanosheets, allows a significant increase in the thermoelectric power factor of the n- and p-doped PtSe2 nanosheets to values as high as 160 and 250 µW mK-2 , respectively. The methodology employed in this study provides a simple and effective route for the molecular doping of TMDCs that can be used for the design and development of highly efficient thermoelectric energy conversion systems.
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Affiliation(s)
- Seonhye Youn
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul, 03722, Republic of Korea
| | - Jeongmin Kim
- Division of Nanotechnology, DGIST, 333 Techno Jungang-daero, Hyeonpung-eup, Dalseong-gun, Daegu, 42988, Republic of Korea
| | - Hongjae Moon
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul, 03722, Republic of Korea
| | - Jae-Keun Kim
- Max-Planck Institute of Microstructure Physics, Weinberg 2, Saale, 06120, Halle, Germany
| | - Juntae Jang
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea
| | - Joonyeon Chang
- Natural Products Institute, Korea Institute of Science and Technology (KIST), 679 Saimdang-ro, Gangneung, Gangwon-do, 25451, Republic of Korea
| | - Takhee Lee
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea
| | - Keehoon Kang
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul, 03722, Republic of Korea
| | - Wooyoung Lee
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul, 03722, Republic of Korea
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12
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Jeong I, Cho K, Yun S, Shin J, Kim J, Kim GT, Lee T, Chung S. Tailoring the Electrical Characteristics of MoS 2 FETs through Controllable Surface Charge Transfer Doping Using Selective Inkjet Printing. ACS NANO 2022; 16:6215-6223. [PMID: 35377600 DOI: 10.1021/acsnano.2c00021] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Surface charge transfer doping (SCTD) has been regarded as an effective approach to tailor the electrical characteristics of atomically thin transition metal dichalcogenides (TMDs) in a nondestructive manner due to their two-dimensional nature. However, the difficulty of achieving rationally controlled SCTD on TMDs via conventional doping methods, such as solution immersion and dopant vaporization, has impeded the realization of practical optoelectronic and electronic devices. Here, we demonstrate controllable SCTD of molybdenum disulfide (MoS2) field-effect transistors using inkjet-printed benzyl viologen (BV) as an n-type dopant. By adjusting the BV concentration and the areal coverage of inkjet-printed BV dopants, controllable SCTD results in BV-doped MoS2 FETs with elaborately tailored electrical performance. Specifically, the suggested solvent system creates well-defined droplets of BV ink having a volume of ∼2 pL, which allows the high spatial selectivity of SCTD onto the MoS2 channels by depositing the BV dopant on demand. Our inkjet-printed SCTD method provides a feasible solution for achieving controllable doping to modulate the electrical and optical performances of TMD-based devices.
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Affiliation(s)
- Inho Jeong
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea
- School of Electrical Engineering, Korea University, Seoul 02841, Korea
| | - Kyungjune Cho
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea
| | - Seobin Yun
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea
| | - Jiwon Shin
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Jaeyoung Kim
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Gyu Tae Kim
- School of Electrical Engineering, Korea University, Seoul 02841, Korea
| | - Takhee Lee
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Seungjun Chung
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea
- KHU-KIST Department of Converging Science and Technology, Kyung Hee University, Seoul 02447, Korea
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