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Yu H, Zhang T, Zhang Z, Liu Z, Sun Q, Huang J, Dai L, Shen Y, Li X, Wang M. High defect tolerance β-CsSnI 3 perovskite light-emitting diodes. MATERIALS HORIZONS 2024. [PMID: 39005219 DOI: 10.1039/d4mh00428k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/16/2024]
Abstract
All-inorganic lead-free CsSnI3 has shown promising potential in optoelectronic applications, particularly in near-infrared perovskite light-emitting diodes (Pero-LEDs). However, non-radiative recombination induced by defects hinders the optoelectronic properties of CsSnI3-based Pero-LEDs, limiting their potential applications. Here, we uncovered that β-CsSnI3 exhibits higher defect tolerance compared to orthorhombic γ-CsSnI3, offering a potential for enhancing the emission efficiency. We further reported on the deposition and stabilization of highly crystalline β-CsSnI3 films with the assistance of cesium formate to suppress electron-phonon scattering and reduce nonradiative recombination. This leads to an enhanced photoluminescence quantum yield up to ∼10%. As a result, near-infrared LEDs based on β-CsSnI3 emitters are achieved with a peak external quantum efficiency of 1.81% and excellent stability under a high current injection of 1.0 A cm-2.
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Affiliation(s)
- Haixuan Yu
- Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, P. R. China.
| | - Tao Zhang
- Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, P. R. China.
| | - Zhiguo Zhang
- Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, P. R. China.
| | - Zhirong Liu
- Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, P. R. China.
| | - Qiang Sun
- Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, P. R. China.
| | - Junyi Huang
- Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, P. R. China.
| | - Letian Dai
- Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, P. R. China.
| | - Yan Shen
- Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, P. R. China.
| | - Xiongjie Li
- Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, P. R. China.
| | - Mingkui Wang
- Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, P. R. China.
- Optics Valley Laboratory, Wuhan, Hubei 430074, P. R. China
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Chen CH, Yu MH, Wang YY, Tseng YC, Chao IH, Ni IC, Lin BH, Lu YJ, Chueh CC. Enhancing the Performance of 2D Tin-Based Pure Red Perovskite Light-Emitting Diodes through the Synergistic Effect of Natural Antioxidants and Cyclic Molecular Additives. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307774. [PMID: 38200683 DOI: 10.1002/smll.202307774] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Revised: 12/27/2023] [Indexed: 01/12/2024]
Abstract
Tin (Sn)-based perovskites are being investigated in many optoelectronic applications given their similar valence electron configuration to that of lead-based perovskites and the potential environmental hazards of lead-based perovskites. However, the formation of high-quality Sn-based perovskite films faces several challenges, mainly due to the easy oxidation of Sn2+ to Sn4+ and the fast crystallization rate. Here, to develop an environmentally friendly process for Sn-based perovskite fabrication, a series of natural antioxidants are studied as additives and ascorbic acid (VitC) is found to have a superior ability to inhibit the oxidation problem. A common cyclic molecule, 18-Crown-6, is further added as a second additive, which synergizes with VitC to significantly reduce the nonradiative recombination pathways in the PEA2SnI4 film. This synergistic effect greatly improves the performance of 2D red Sn-based PeLED, with a maximum external quantum efficiency of 1.87% (≈9 times that of the pristine device), a purer color, and better bias stability. This work demonstrates the potential of the dual-additive approach in enhancing the performance of 2D Sn-based PeLEDs, while the use of these environmentally friendly additives contributes to their future sustainability.
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Affiliation(s)
- Chiung-Han Chen
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Ming-Hsuan Yu
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Yen-Yu Wang
- Research Center for Applied Sciences, Academia Sinica, Taipei, 11529, Taiwan
| | - Yu-Cheng Tseng
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - I-Hsiang Chao
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - I-Chih Ni
- Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, 10617, Taiwan
| | - Bi-Hsuan Lin
- National Synchrotron Radiation Research Center, Hsinchu, 30076, Taiwan
| | - Yu-Jung Lu
- Research Center for Applied Sciences, Academia Sinica, Taipei, 11529, Taiwan
| | - Chu-Chen Chueh
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
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Min H, Wang N, Chen N, Tong Y, Wang Y, Wang J, Liu J, Wang S, Wu X, Yang P, Shi H, Zhuo C, Chen Q, Li J, Zhang D, Lu X, Zhu C, Peng Q, Zhu L, Chang J, Huang W, Wang J. Spin coating epitaxial heterodimensional tin perovskites for light-emitting diodes. NATURE NANOTECHNOLOGY 2024; 19:632-637. [PMID: 38216685 DOI: 10.1038/s41565-023-01588-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Accepted: 11/29/2023] [Indexed: 01/14/2024]
Abstract
Environmentally friendly tin (Sn) perovskites have received considerable attention due to their great potential for replacing their toxic lead counterparts in applications of photovoltaics and light-emitting diodes (LEDs). However, the device performance of Sn perovskites lags far behind that of lead perovskites, and the highest reported external quantum efficiencies of near-infrared Sn perovskite LEDs are below 10%. The poor performance stems mainly from the numerous defects within Sn perovskite crystallites and grain boundaries, leading to serious non-radiative recombination. Various epitaxy methods have been introduced to obtain high-quality perovskites, although their sophisticated processes limit the scalable fabrication of functional devices. Here we demonstrate that epitaxial heterodimensional Sn perovskite films can be fabricated using a spin-coating process, and efficient LEDs with an external quantum efficiency of 11.6% can be achieved based on these films. The film is composed of a two-dimensional perovskite layer and a three-dimensional perovskite layer, which is highly ordered and has a well-defined interface with minimal interfacial areas between the different dimensional perovskites. This unique nanostructure is formed through direct spin coating of the perovskite precursor solution with tryptophan and SnF2 additives onto indium tin oxide glass. We believe that our approach will provide new opportunities for further developing high-performance optoelectronic devices based on heterodimensional perovskites.
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Affiliation(s)
- Hao Min
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Nana Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Nana Chen
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Yunfang Tong
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Yujiao Wang
- Multi-scale Porous Materials Center, Institute of Advanced Interdisciplinary Studies & School of Chemistry and Chemical Engineering, Chongqing University, Chongqing, China
| | - Jiaqi Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Jinglong Liu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Saixue Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Xiao Wu
- Department of Physics, The Chinese University of Hong Kong, Hong Kong, China
| | - Pinghui Yang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Haokun Shi
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Chunxue Zhuo
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Qi Chen
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Jingwei Li
- Multi-scale Porous Materials Center, Institute of Advanced Interdisciplinary Studies & School of Chemistry and Chemical Engineering, Chongqing University, Chongqing, China
| | - Daliang Zhang
- Multi-scale Porous Materials Center, Institute of Advanced Interdisciplinary Studies & School of Chemistry and Chemical Engineering, Chongqing University, Chongqing, China
| | - Xinhui Lu
- Department of Physics, The Chinese University of Hong Kong, Hong Kong, China
| | - Chao Zhu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing, China
| | - Qiming Peng
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Lin Zhu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Jin Chang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China.
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China.
- Shaanxi Institute of Flexible Electronics (SIFE), Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University (NPU), Xi'an, China.
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, China.
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, China.
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China.
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, China.
- Changzhou University, Changzhou, China.
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Liu Y, Di Stasio F, Bi C, Zhang J, Xia Z, Shi Z, Manna L. Near-Infrared Light Emitting Metal Halides: Materials, Mechanisms, and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312482. [PMID: 38380797 DOI: 10.1002/adma.202312482] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2023] [Revised: 02/13/2024] [Indexed: 02/22/2024]
Abstract
Near-Infrared (NIR) light emitting metal halides are emerging as a new generation of optical materials owing to their appealing features, which include low-cost synthesis, solution processability, and adjustable optical properties. NIR-emitting perovskite-based light-emitting diodes (LEDs) have reached an external quantum efficiency (EQE) of over 20% and a device stability of over 10,000 h. Such results have sparked an interest in exploring new NIR metal halide emitters. In this review, several different types of NIR-emitting metal halides, including lead/tin bromide/iodide perovskites, lanthanide ions doped/based metal halides, double perovskites, low dimensional hybrid and Bi3+/Sb3+/Cr3+ doped metal halides, are summarized, and their recent advancement is assessed. The characteristics and mechanisms of narrow-band or broadband NIR luminescence in all these materials are discussed in detail. Also, the various applications of NIR-emitting metal halides are highlighted and an outlook for the field is provided.
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Affiliation(s)
- Ying Liu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Francesco Di Stasio
- Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy
| | - Chenghao Bi
- Qingdao Innovation and Development Base, Harbin Engineering University, Sansha Str. 1777, Qingdao, 266500, China
| | - Jibin Zhang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Zhiguo Xia
- The State Key Laboratory of Luminescent Materials and Devices, School of Physics and Optoelectronics, South China University of Technology, Guangzhou, 510641, China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Liberato Manna
- Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy
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5
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Zhang Q, Zhang D, Cao B, Poddar S, Mo X, Fan Z. Improving the Operational Lifetime of Metal-Halide Perovskite Light-Emitting Diodes with Dimension Control and Ligand Engineering. ACS NANO 2024; 18:8557-8570. [PMID: 38482819 DOI: 10.1021/acsnano.3c13136] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/27/2024]
Abstract
Perovskite light-emitting diodes (LEDs) have emerged as one of the most propitious candidates for next-generation lighting and displays, with the highest external quantum efficiency (EQE) of perovskite LEDs already surpassing the 20% milestone. However, the further development of perovskite LEDs primarily relies on addressing operational instability issues. This Perspective examines some of the key factors that impact the lifetime of perovskite LED devices and some representative reports on recent advancements aimed at improving the lifetime. Our analysis underscores the significance of "nano" strategies in achieving long-term stable perovskite LEDs. Significant efforts must be directed toward proper device encapsulation, perovskite material passivation, interfacial treatment to address environment-induced material instability, bias-induced phase separation, and ion migration issues.
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Affiliation(s)
- Qianpeng Zhang
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology; Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Daquan Zhang
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology; Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Bryan Cao
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Swapnadeep Poddar
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Xiaoliang Mo
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China
| | - Zhiyong Fan
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology; Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
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Pan JL, Shen WS, Li SN, Zhang ZD, Zhao F, Duan HW, Wang YK, Liao LS. Polarity-Mediated Antisolvent Control Enables Efficient Lanthanide-Based near-Infrared Perovskite LEDs. NANO LETTERS 2024; 24:2765-2772. [PMID: 38393855 DOI: 10.1021/acs.nanolett.3c04586] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/25/2024]
Abstract
Alloying lanthanide ions (Yb3+) into perovskite quantum dots (Yb3+:CsPb(Cl1-xBrx)3) is an effective method to achieve efficient near-infrared (NIR) luminescence (>950 nm). Increasing the Yb3+ alloying ratio in the perovskite matrix enhances the luminescence intensity of Yb3+ emission at 990 nm. However, high Yb3+ alloying (>15%) results in vacancy-induced inferior material stability. In this work, we developed a polarity-mediated antisolvent manipulation strategy to resolve the incompatibility between a high Yb3+ alloying ratio and inferior stability of Yb3+:CsPb(Cl1-xBrx)3. Precise control of solution polarity enables increased uniformity of the perovskite matrix with fewer trap densities. Employing this strategy, we obtain Yb3+:CsPb(Cl1-xBrx)3 with the highest Yb3+ alloying ratio of 30.2% and a 2-fold higher electroluminescence intensity at 990 nm. We lever the engineered Yb3+:CsPb(Cl1-xBrx)3 to fabricate NIR-LEDs, achieving a peak external quantum efficiency (EQE) of 8.5% at 990 nm: this represents the highest among perovskite NIR-LEDs with an emission wavelength above 950 nm.
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Affiliation(s)
- Jia-Lin Pan
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
| | - Wan-Shan Shen
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
| | - Sheng-Nan Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
| | - Zhong-Da Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
| | - Feng Zhao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
| | - Hong-Wei Duan
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
| | - Ya-Kun Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
| | - Liang-Sheng Liao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
- Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Taipa 999078, Macau SAR, China
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Zhang W, Liu H, Yan F, Dong B, Wang HL. Recent Progress of Low-Toxicity Poor-Lead All-Inorganic Perovskite Solar Cells. SMALL METHODS 2024; 8:e2300421. [PMID: 37350508 DOI: 10.1002/smtd.202300421] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Revised: 05/25/2023] [Indexed: 06/24/2023]
Abstract
Organic-inorganic hybrid perovskite solar cells (PSCs) have achieved an impressive certified efficiency of 25.7%, which is comparatively higher than that of commercial silicon solar cells (23.3%), showing great potential toward commercialization. However, the low stability and high toxicity due to the presence of volatile organic components and toxic metal lead in the perovskites pose significant challenges. To obtain robust and low-toxicity PSCs, substituting organic cations with pure inorganic cations, and partially or fully replacing the toxic Pb with environmentally benign metals, is one of the promising methods. To date, continuous efforts have been made toward the construction of highly performed low-toxicity inorganic PSCs with astonishing breakthroughs. This review article provides an overview of recent progress in inorganic PSCs in terms of lead-reduced and lead-free compositions. The physical properties of poor-lead all-inorganic perovskites are discussed to unveil the major challenges in this field. Then, it reports notable achievements for the experimental studies to date to figure out feasible methods for efficient and stable poor-lead all-inorganic PSCs. Finally, a discussion of the challenges and prospects for poor-lead all-inorganic PSCs in the future is presented.
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Affiliation(s)
- Weihai Zhang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Heng Liu
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Furi Yan
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Baichuan Dong
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Hsing-Lin Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
- Key University Laboratory of Highly Efficient Utilization of Solar Energy and Sustainable Development of Guangdong, Key Laboratory of Electric Driving Force Energy Materials of Guangdong, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
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Sun C, Deng Z, Liu X, Zhang F, Lian K, Zhao Y, Zhang H, Han J, Luo M. Highly efficient and stable Cs 3Mn 0.93Zn 0.07Br 5@SiO 2 for wide color gamut backlight displays. Dalton Trans 2024; 53:2153-2158. [PMID: 38189118 DOI: 10.1039/d3dt03874b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/09/2024]
Abstract
Mn-based perovskites have become a new candidate material for backlight display applications. However, low efficiency and poor stability are the key problems limiting the application of Mn-based perovskites. In this work, Zn-doped and SiO2-encapsulated Cs3MnBr5, denoted as Cs3Mn0.93Zn0.07Br5@SiO2 (CMZBS), was successfully synthesized to improve the photoluminescence quantum yield (PLQY) and stability. After Zn doping, the PLQY increased from 51% to 72% due to the reduction in the energy transfer between [MnBr4]2-. The PLQY can be further improved to 80% after coating SiO2. Compared with Cs3MnBr5 (CMB), CMZBS showed better stability against thermal, air, light, and polar solvents (ethanol and isopropanol). In addition, a white LED (WLED) device with a CIE of (0.323, 0.325) was fabricated by integrating CMZBS and the red phosphor K2SiF6:Mn4+ on a 465 nm blue GaN chip, which exhibited a high luminous efficiency of 92 lm W-1 and excellent stability, demonstrating its great potential application in wide color gamut displays.
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Affiliation(s)
- Chun Sun
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Zhihui Deng
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Xiaohui Liu
- Key Laboratory of Magnetism and Magnetic Materials Autonomous Region, Baotou Teachers' College, Inner Mongolia University of Science and Technology, 3 Kexue Road, Baotou, 014030, P.R. China
- Zhejiang Ruico Advanced Material Co., Ltd, No. 188 Liangshan Road, Huzhou, 313018, PR China
| | - Fuhao Zhang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Kai Lian
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Yiwei Zhao
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Hu Zhang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Jiachen Han
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Mingming Luo
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
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9
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Bai W, Liang M, Xuan T, Gong T, Bian L, Li H, Xie RJ. Ligand Engineering Enables Efficient Pure Red Tin-Based Perovskite Light-Emitting Diodes. Angew Chem Int Ed Engl 2023; 62:e202312728. [PMID: 37888877 DOI: 10.1002/anie.202312728] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/29/2023] [Revised: 10/19/2023] [Accepted: 10/27/2023] [Indexed: 10/28/2023]
Abstract
With increasing ecological and environmental concerns, tin (Sn)-based perovskite light-emitting diodes (PeLEDs) are competitive candidates for future displays because of their environmental friendliness, excellent photoelectric properties, and low-cost solution-processed fabrication. Nonetheless, their electroluminescence (EL) performance still lags behind that of lead (Pb)-based PeLEDs due to the fast crystallization rate of Sn-based perovskite films and undesired oxidation from Sn2+ to Sn4+ , leading to poor film morphology and coverage, as well as high density defects. Here, we propose a ligand engineering strategy to construct high-quality phenethylammonium tin iodide (PEA2 SnI4 ) perovskite films by using L-glutathione reduced (GSH) as surface ligands toward efficient pure red PEA2 SnI4 -based PeLEDs. We show that the hydrogen-bond and coordinate interactions between GSH and PEA2 SnI4 effectively reduce the crystallization rate of the perovskites and suppress the oxidation of Sn2+ and formation of defects. The improved pure red perovskite films not only show excellent uniformity, density, and coverage but also exhibit enhanced optical properties and stability. Finally, state-of-the-art pure red PeLEDs achieve a record external quantum efficiency of 9.32 % in the field of PEA2 SnI4 -based devices. This work demonstrates that ligand engineering represents a feasible route to enhance the EL performance of Sn-based PeLEDs.
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Affiliation(s)
- Wenhao Bai
- Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials, College of Materials, Xiamen University, Xiamen, 361005, P. R. China
| | - Mingming Liang
- Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials, College of Materials, Xiamen University, Xiamen, 361005, P. R. China
| | - Tongtong Xuan
- Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials, College of Materials, Xiamen University, Xiamen, 361005, P. R. China
- Shenzhen Research Institute of Xiamen University, Shenzhen, 518000, P. R. China
| | - Ting Gong
- Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials, College of Materials, Xiamen University, Xiamen, 361005, P. R. China
| | - Liang Bian
- State Key Laboratory of Environment-friendly Energy Materials, Southwest University of Science and Technology, Sichuan, 621010, P. R. China
| | - Huili Li
- Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, P. R. China
| | - Rong-Jun Xie
- Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials, College of Materials, Xiamen University, Xiamen, 361005, P. R. China
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Xiamen, 361005, P. R. China
- Shenzhen Research Institute of Xiamen University, Shenzhen, 518000, P. R. China
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10
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Padhiar MA, Zhang S, Wang M, Zamin Khan N, Iqbal S, Ji Y, Muhammad N, Khan SA, Pan S. Synergistic Enhancement of Near-Infrared Emission in CsPbCl 3 Host via Co-Doping with Yb 3+ and Nd 3+ for Perovskite Light Emitting Diodes. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2703. [PMID: 37836344 PMCID: PMC10574356 DOI: 10.3390/nano13192703] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2023] [Revised: 09/28/2023] [Accepted: 09/28/2023] [Indexed: 10/15/2023]
Abstract
Perovskite nanocrystals (PeNCs) have emerged as a promising class of luminescent materials offering size and composition-tunable luminescence with high efficiency and color purity in the visible range. PeNCs doped with Yb3+ ions, known for their near-infrared (NIR) emission properties, have gained significant attention due to their potential applications. However, these materials still face challenges with weak NIR electroluminescence (EL) emission and low external quantum efficiency (EQE), primarily due to undesired resonance energy transfer (RET) occurring between the host and Yb3+ ions, which adversely affects their emission efficiency and device performance. Herein, we report the synergistic enhancement of NIR emission in a CsPbCl3 host through co-doping with Yb3+/Nd3+ ions for perovskite LEDs (PeLEDs). The co-doping of Yb3+/Nd3+ ions in a CsPbCl3 host resulted in enhanced NIR emission above 1000 nm, which is highly desirable for NIR optoelectronic applications. This cooperative energy transfer between Yb3+ and Nd3+ can enhance the overall efficiency of energy conversion. Furthermore, the PeLEDs incorporating the co-doped CsPbCl3/Yb3+/Nd3+ PeNCs as an emitting layer exhibited significantly enhanced NIR EL compared to the single doped PeLEDs. The optimized co-doped PeLEDs showed improved device performance, including increased EQE of 6.2% at 1035 nm wavelength and low turn-on voltage. Our findings highlight the potential of co-doping with Yb3+ and Nd3+ ions as a strategy for achieving synergistic enhancement of NIR emission in CsPbCl3 perovskite materials, which could pave the way for the development of highly efficient perovskite LEDs for NIR optoelectronic applications.
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Affiliation(s)
- Muhammad Amin Padhiar
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China; (M.A.P.)
- Research Center for Advanced Information Materials (CAIM), Huangpu Research and Graduate School of Guangzhou University, Guangzhou 510555, China
- Key Lab of Si-based Information Materials & Devices and Integrated Circuits Design, Department of Education of Guangdong Province, Guangzhou 510006, China
| | - Shaolin Zhang
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China; (M.A.P.)
- Research Center for Advanced Information Materials (CAIM), Huangpu Research and Graduate School of Guangzhou University, Guangzhou 510555, China
- Key Lab of Si-based Information Materials & Devices and Integrated Circuits Design, Department of Education of Guangdong Province, Guangzhou 510006, China
| | - Minqiang Wang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research Xi’an Jiaotong University, Xi’an 710049, China (Y.J.)
| | - Noor Zamin Khan
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China; (M.A.P.)
- Research Center for Advanced Information Materials (CAIM), Huangpu Research and Graduate School of Guangzhou University, Guangzhou 510555, China
| | - Shoaib Iqbal
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research Xi’an Jiaotong University, Xi’an 710049, China (Y.J.)
| | - Yongqiang Ji
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research Xi’an Jiaotong University, Xi’an 710049, China (Y.J.)
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Nisar Muhammad
- Hefei National Research Center for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China, Hefei 230026, China;
| | - Sayed Ali Khan
- Department of Chemistry and Chemical Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ 08854, USA
| | - Shusheng Pan
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China; (M.A.P.)
- Research Center for Advanced Information Materials (CAIM), Huangpu Research and Graduate School of Guangzhou University, Guangzhou 510555, China
- Key Lab of Si-based Information Materials & Devices and Integrated Circuits Design, Department of Education of Guangdong Province, Guangzhou 510006, China
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11
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Han D, Wang J, Agosta L, Zang Z, Zhao B, Kong L, Lu H, Mosquera-Lois I, Carnevali V, Dong J, Zhou J, Ji H, Pfeifer L, Zakeeruddin SM, Yang Y, Wu B, Rothlisberger U, Yang X, Grätzel M, Wang N. Tautomeric mixture coordination enables efficient lead-free perovskite LEDs. Nature 2023; 622:493-498. [PMID: 37557914 DOI: 10.1038/s41586-023-06514-6] [Citation(s) in RCA: 27] [Impact Index Per Article: 27.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/11/2023] [Accepted: 08/02/2023] [Indexed: 08/11/2023]
Abstract
Lead halide perovskite light-emitting diodes (PeLEDs) have demonstrated remarkable optoelectronic performance1-3. However, there are potential toxicity issues with lead4,5 and removing lead from the best-performing PeLEDs-without compromising their high external quantum efficiencies-remains a challenge. Here we report a tautomeric-mixture-coordination-induced electron localization strategy to stabilize the lead-free tin perovskite TEA2SnI4 (TEAI is 2-thiopheneethylammonium iodide) by incorporating cyanuric acid. We demonstrate that a crucial function of the coordination is to amplify the electronic effects, even for those Sn atoms that aren't strongly bonded with cyanuric acid owing to the formation of hydrogen-bonded tautomeric dimer and trimer superstructures on the perovskite surface. This electron localization weakens adverse effects from Anderson localization and improves ordering in the crystal structure of TEA2SnI4. These factors result in a two-orders-of-magnitude reduction in the non-radiative recombination capture coefficient and an approximately twofold enhancement in the exciton binding energy. Our lead-free PeLED has an external quantum efficiency of up to 20.29%, representing a performance comparable to that of state-of-the-art lead-containing PeLEDs6-12. We anticipate that these findings will provide insights into the stabilization of Sn(II) perovskites and further the development of lead-free perovskite applications.
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Affiliation(s)
- Dongyuan Han
- College of Physics, Jilin University, Changchun, China
| | - Jie Wang
- College of Physics, Jilin University, Changchun, China
| | - Lorenzo Agosta
- Laboratory of Computational Chemistry and Biochemistry, Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Ziang Zang
- College of Physics, Jilin University, Changchun, China
| | - Bin Zhao
- College of Physics, Jilin University, Changchun, China
| | - Lingmei Kong
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, China
| | - Haizhou Lu
- Laboratory of Photonics and Interfaces, Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
- Key Laboratory of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing, China.
| | - Irea Mosquera-Lois
- Laboratory of Computational Chemistry and Biochemistry, Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Virginia Carnevali
- Laboratory of Computational Chemistry and Biochemistry, Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Jianchao Dong
- College of Physics, Jilin University, Changchun, China
| | - Jianheng Zhou
- College of Physics, Jilin University, Changchun, China
| | - Huiyu Ji
- College of Physics, Jilin University, Changchun, China
| | - Lukas Pfeifer
- Laboratory of Photonics and Interfaces, Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Shaik M Zakeeruddin
- Laboratory of Photonics and Interfaces, Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Yingguo Yang
- Shanghai Synchrotron Radiation Facility (SSRF), Zhangjiang Lab, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, China
- School of Microelectronics, Fudan University, Shanghai, China
| | - Bo Wu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China
| | - Ursula Rothlisberger
- Laboratory of Computational Chemistry and Biochemistry, Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, China.
| | - Michael Grätzel
- Laboratory of Photonics and Interfaces, Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
| | - Ning Wang
- College of Physics, Jilin University, Changchun, China.
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12
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Zhao N, Yan J, Zhuo C, Yuan L, Chen Y, Nan Y, Zhou M, Yang X, Qian D, Wang N, Wang J. Enhanced Charge Balance for Efficient Electroluminescence from Cesium Copper Halides. J Phys Chem Lett 2023:6867-6871. [PMID: 37490522 DOI: 10.1021/acs.jpclett.3c01821] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/27/2023]
Abstract
Cesium copper halides have the advantages of high photoluminescence quantum efficiency and good stability, making them attractive for replacing toxic lead halides in the field of perovskite light-emitting diodes (LEDs). However, due to their shallow conduction band and the lack of electron transport layers compatible with it, it remains a great challenge to achieve charge balance in LED devices. This drawback manifests as the accumulation of holes at the interface between the emitting layer and electron transport layer, resulting in nonradiative recombination. Here, we demonstrate an effective approach to address this issue by suppressing hole injection, which is realized through modification of the poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) layer with polyethylenimine. This leads to cesium-copper-halide LEDs with a high external quantum efficiency of 5.6%, representing an advance in device architecture for efficient electroluminescence from cesium copper halides.
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Affiliation(s)
- Nian Zhao
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Jing Yan
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Chunxue Zhuo
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Lingzhi Yuan
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Yu Chen
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Yang Nan
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Mingmin Zhou
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Xiao Yang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Dongmin Qian
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Nana Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
- Changzhou University, 21 Middle Gehu Road, Changzhou 213164, China
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13
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Zhang L, Mei L, Wang K, Lv Y, Zhang S, Lian Y, Liu X, Ma Z, Xiao G, Liu Q, Zhai S, Zhang S, Liu G, Yuan L, Guo B, Chen Z, Wei K, Liu A, Yue S, Niu G, Pan X, Sun J, Hua Y, Wu WQ, Di D, Zhao B, Tian J, Wang Z, Yang Y, Chu L, Yuan M, Zeng H, Yip HL, Yan K, Xu W, Zhu L, Zhang W, Xing G, Gao F, Ding L. Advances in the Application of Perovskite Materials. NANO-MICRO LETTERS 2023; 15:177. [PMID: 37428261 PMCID: PMC10333173 DOI: 10.1007/s40820-023-01140-3] [Citation(s) in RCA: 21] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Accepted: 05/29/2023] [Indexed: 07/11/2023]
Abstract
Nowadays, the soar of photovoltaic performance of perovskite solar cells has set off a fever in the study of metal halide perovskite materials. The excellent optoelectronic properties and defect tolerance feature allow metal halide perovskite to be employed in a wide variety of applications. This article provides a holistic review over the current progress and future prospects of metal halide perovskite materials in representative promising applications, including traditional optoelectronic devices (solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices (artificial synapses and memristors) and pressure-induced emission. This review highlights the fundamentals, the current progress and the remaining challenges for each application, aiming to provide a comprehensive overview of the development status and a navigation of future research for metal halide perovskite materials and devices.
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Affiliation(s)
- Lixiu Zhang
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Luyao Mei
- School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, People's Republic of China
| | - Kaiyang Wang
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen, 518055, People's Republic of China
| | - Yinhua Lv
- School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China
| | - Shuai Zhang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Yaxiao Lian
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Xiaoke Liu
- Department of Physics, Linköping University, 58183, Linköping, Sweden
| | - Zhiwei Ma
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, People's Republic of China
| | - Guanjun Xiao
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, People's Republic of China
| | - Qiang Liu
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, People's Republic of China
| | - Shuaibo Zhai
- College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, People's Republic of China
| | - Shengli Zhang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Gengling Liu
- School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, People's Republic of China
| | - Ligang Yuan
- School of Environment and Energy, South China University of Technology, Guangzhou, 510000, People's Republic of China
| | - Bingbing Guo
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Ziming Chen
- Department of Chemistry, Imperial College London, London, W12 0BZ, UK
| | - Keyu Wei
- College of Chemistry, Nankai University, Tianjin, 300071, People's Republic of China
| | - Aqiang Liu
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China
| | - Shizhong Yue
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China
| | - Guangda Niu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China
| | - Xiyan Pan
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Jie Sun
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Yong Hua
- School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China
| | - Wu-Qiang Wu
- School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, People's Republic of China
| | - Dawei Di
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Baodan Zhao
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Jianjun Tian
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China
| | - Zhijie Wang
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China
| | - Yang Yang
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Liang Chu
- School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, People's Republic of China
| | - Mingjian Yuan
- College of Chemistry, Nankai University, Tianjin, 300071, People's Republic of China
| | - Haibo Zeng
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Hin-Lap Yip
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, People's Republic of China
| | - Keyou Yan
- School of Environment and Energy, South China University of Technology, Guangzhou, 510000, People's Republic of China
| | - Wentao Xu
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, People's Republic of China.
| | - Lu Zhu
- School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, People's Republic of China.
| | - Wenhua Zhang
- School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China.
| | - Guichuan Xing
- Institute of Applied Physics and Materials Engineering, University of Macau, Macau, 999078, People's Republic of China.
| | - Feng Gao
- Department of Physics, Linköping University, 58183, Linköping, Sweden.
| | - Liming Ding
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China.
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14
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Yang L, Huang J, Tan Y, Lu W, Li Z, Pan A. All-inorganic lead halide perovskite nanocrystals applied in advanced display devices. MATERIALS HORIZONS 2023; 10:1969-1989. [PMID: 37039776 DOI: 10.1039/d3mh00062a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Advanced display devices are in greater demand due to their large color gamut, high color purity, ultrahigh visual resolution, and small size pixels. All-inorganic lead halide perovskite (AILHP) nanocrystals (NCs) possess inherent advantages such as narrow emission width, saturated color, and flexible integration, and have been developed as functional films, light sources, backlight components, and display panels. However, some drawbacks still restrict the practical application of advanced display devices based on AILHP NCs, including working stability, large-scale synthesis, and cost. In this review, we focus on AILHP NCs, review the recent progress in materials synthesis, stability improvement, patterning techniques, and device application. We also highlight the important role of materials systems in creating advanced display devices, followed by the challenges and opportunities in industrial processes. This review provides beneficial inspiration for the future development of AILHP NCs in colorful and white backlight, as well as high resolution full-color displays.
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Affiliation(s)
- Liuli Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Jianhua Huang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Yike Tan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Wei Lu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Ziwei Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China.
- Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, Wuhan, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China.
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15
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Li M, Zhao Y, Guo J, Qin X, Zhang Q, Tian C, Xu P, Li Y, Tian W, Zheng X, Xing G, Zhang WH, Wei Z. Phase Regulation and Defect Passivation Enabled by Phosphoryl Chloride Molecules for Efficient Quasi-2D Perovskite Light-Emitting Diodes. NANO-MICRO LETTERS 2023; 15:119. [PMID: 37127730 PMCID: PMC10151432 DOI: 10.1007/s40820-023-01089-3] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2023] [Accepted: 04/03/2023] [Indexed: 05/03/2023]
Abstract
HIGHLIGHTS The modification of perovskite precursor by a series of phosphoryl chloride molecules can indeed improve the performance of perovskite LEDs (Pero-LEDs). The bis(2-oxo-3-oxazolidinyl) phosphinic chloride can not only regulate the phase distribution by controlling the crystallization rate but also passivate the defects of the quasi-2D perovskite. Highly efficient and reproducible Pero-LEDs are achieved with an maximum external quantum efficiency (EQEmax) of 20.82% and an average EQE (EQEave) of around 20% on 50 devices. Quasi-2D perovskites have attracted tremendous interest for application as light-emission layers in light-emitting diodes (LEDs). However, the heterogeneous n phase and non-uniform distribution still severely limit the further development of quasi-2D perovskite LEDs (Pero-LEDs). Meanwhile, the increased defect density caused by the reduced dimension and grain size induces non-radiative recombination and further deteriorates the device performance. Here, we found that a series of molecules containing phosphoryl chloride functional groups have noticeable enhancement effects on the device performance of quasi-2D Pero-LEDs. Then, we studied the modification mechanism by focusing on the bis(2-oxo-3-oxazolidinyl) phosphinic chloride (BOPCl). It is concluded that the BOPCl can not only regulate the phase distribution by decreasing the crystallization rate but also remain in the grain boundaries and passivate the defects. As a result, the corresponding quasi-2D Pero-LEDs obtained a maximum external quantum efficiency (EQEmax) of 20.82% and an average EQE (EQEave) of around 20% on the optimal 50 devices, proving excellent reproducibility. Our work provides a new selection of molecular types for regulating the crystallization and passivating the defects of quasi-2D perovskite films.
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Affiliation(s)
- Mingliang Li
- Sichuan Research Center of New Materials, Institute of Chemical Materials, China Academy of Engineering Physics, Chengdu, 610200, People's Republic of China
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, People's Republic of China
| | - Yaping Zhao
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, People's Republic of China
| | - Jia Guo
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, 999078, People's Republic of China.
| | - Xiangqian Qin
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, People's Republic of China
| | - Qin Zhang
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, People's Republic of China
| | - Chengbo Tian
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, People's Republic of China
| | - Peng Xu
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, People's Republic of China
| | - Yuqing Li
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, People's Republic of China
| | - Wanjia Tian
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, People's Republic of China
| | - Xiaojia Zheng
- Sichuan Research Center of New Materials, Institute of Chemical Materials, China Academy of Engineering Physics, Chengdu, 610200, People's Republic of China
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, 999078, People's Republic of China
| | - Wen-Hua Zhang
- Sichuan Research Center of New Materials, Institute of Chemical Materials, China Academy of Engineering Physics, Chengdu, 610200, People's Republic of China.
- School of Materials and Energy, Yunnan University, Kunming, 650050, People's Republic of China.
| | - Zhanhua Wei
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, People's Republic of China.
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), Xiamen, 361005, People's Republic of China.
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16
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Chaudhary M, Karmakar A, Mishra V, Bhattacharya A, Mumbaraddi D, Mar A, Michaelis VK. Effect of aliovalent bismuth substitution on structure and optical properties of CsSnBr 3. Commun Chem 2023; 6:75. [PMID: 37076629 PMCID: PMC10115781 DOI: 10.1038/s42004-023-00874-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/11/2023] [Accepted: 04/04/2023] [Indexed: 04/21/2023] Open
Abstract
Aliovalent substitution of the B component in ABX3 metal halides has often been proposed to modify the band gap and thus the photovoltaic properties, but details about the resulting structure have remained largely unknown. Here, we examine these effects in Bi-substituted CsSnBr3. Powder X-ray diffraction (XRD) and solid-state 119Sn, 133Cs and 209Bi nuclear magnetic resonance (NMR) spectroscopy were carried out to infer how Bi substitution changes the structure of these compounds. The cubic perovskite structure is preserved upon Bi-substitution, but with disorder in the B site occurring at the atomic level. Bi atoms are randomly distributed as they substitute for Sn atoms with no evidence of Bi segregation. The absorption edge in the optical spectra shifts from 1.8 to 1.2 eV upon Bi-substitution, maintaining a direct band gap according to electronic structure calculations. It is shown that Bi-substitution improves resistance to degradation by inhibiting the oxidation of Sn.
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Affiliation(s)
- Madhusudan Chaudhary
- Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2, Canada
| | - Abhoy Karmakar
- Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2, Canada
| | - Vidyanshu Mishra
- Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2, Canada
| | - Amit Bhattacharya
- Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2, Canada
| | - Dundappa Mumbaraddi
- Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2, Canada
| | - Arthur Mar
- Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2, Canada
| | - Vladimir K Michaelis
- Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2, Canada.
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17
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Zhang G, Xing S, Cao X, Zhao B, Di D. Stabilizing FASnI 3-based perovskite light-emitting diodes with crystallization control. NANOSCALE 2023; 15:6954-6959. [PMID: 36988969 DOI: 10.1039/d3nr00177f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
The toxicity of lead presents a critical challenge for the application of perovskite optoelectronics. Lead-free perovskite solar cells were achieved with formamidinium tin iodide (FASnI3) perovskites, exhibiting decent power-conversion efficiencies (PCEs) of up to 14%, with >98% of the initial PCE retained after 3000 h of storage. However, when employed in light-emitting applications, FASnI3-based perovskite LEDs (PeLEDs) show limited stability, with T50 lifetimes of up to 0.25 h at 10 mA cm-2. Here, we improve the stability of FASnI3-based PeLEDs through the inclusion of a two-dimensional precursor phenethylamine iodide (PEAI), allowing controlled crystallization of the mixed-dimensional perovskite emitters. The density of defects is found to be reduced, accompanied by the suppression of oxidation from Sn2+ to Sn4+. Using an optimized perovskite composition, we achieve an EQE of 1.5% (a ∼10-fold improvement over the control devices), a maximum radiance of 145 W sr-1 m-2, and a record-long T50 lifetime of 10.3 h at 100 mA cm-2 for FASnI3-based PeLEDs. Our results illuminate an alternative path toward lead-free PeLED applications.
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Affiliation(s)
- Guoling Zhang
- State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou, 310027, China.
| | - Shiyu Xing
- State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou, 310027, China.
| | - Xuhui Cao
- State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou, 310027, China.
| | - Baodan Zhao
- State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou, 310027, China.
| | - Dawei Di
- State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou, 310027, China.
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18
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Xue SH, Yao JY, Xu LJ, Chen ZN. Advances in electrically driven light-emitting diodes based on lead-free metal halides. Chem Commun (Camb) 2023; 59:1116-1124. [PMID: 36629875 DOI: 10.1039/d2cc06680g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
The emerging lead halide perovskites show great potential for their use as emitters in electrically driven light-emitting diodes (LEDs) with external quantum efficiency (EQE) over 25%. While the toxicity of lead and inferior device stability are the main obstacles for their commercialization, replacing Pb2+ with low- or non-toxic metal ions to form low- or zero-dimensional structures provides an alternative approach to effectively tackle these issues. Recently, luminescent lead-free metal halides have been increasingly developed toward eco-friendly and highly efficient electroluminescence. In this feature article, we give a brief overview of recent advances in luminescent lead-free metal halides and their applications in electrically driven LEDs. The challenges and prospects in this field are outlined at the end.
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Affiliation(s)
- Shu-Hua Xue
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China. .,College of Chemistry and Material Science, Fujian Normal University, Fuzhou 350007, China
| | - Jia-Yu Yao
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China.
| | - Liang-Jin Xu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China. .,College of Chemistry and Material Science, Fujian Normal University, Fuzhou 350007, China.,Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China.,University of Chinese Academy of Sciences, Beijing 100039, China
| | - Zhong-Ning Chen
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China. .,College of Chemistry and Material Science, Fujian Normal University, Fuzhou 350007, China.,Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China.,University of Chinese Academy of Sciences, Beijing 100039, China
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19
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Qian X, Shen Y, Zhang LJ, Guo M, Cai XY, Lu Y, Liu H, Zhang YF, Tang Y, Chen L, Tang Y, Wang J, Zhou W, Gao X, Mao H, Li Y, Tang JX, Lee ST. Bio-Inspired Pangolin Design for Self-Healable Flexible Perovskite Light-Emitting Diodes. ACS NANO 2022; 16:17973-17981. [PMID: 36190790 DOI: 10.1021/acsnano.2c06118] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Despite tremendous developments in the luminescene performance of perovskite light-emitting diodes (PeLEDs), the brittle nature of perovskite crystals and their poor crystallinity on flexible substrates inevitably lead to inferior performance. Inspired by pangolins' combination of rigid scales and soft flesh, we propose a bionic structure design for self-healing flexible PeLEDs by employing a polymer-assisted crystal regulation method with a soft elastomer of diphenylmethane diisocyanate polyurethane (MDI-PU). The crystallinity and flexural strain resistance of such perovskite films on plastics with silver-nanowire-based flexible transparent electrodes are highly enhanced. The detrimental cracks induced during repeated deformation can be effectively self-healed under heat treatment via intramolecular/intermolecular hydrogen bonds with MDI-PU. Upon collective optimization of the perovskite films and device architecture, the blue-emitting flexible PeLEDs can achieve a record external quantum efficiency of 13.5% and high resistance to flexural strain, which retain 87.8 and 80.7% of their initial efficiency after repeated bending and twisting operations of 2000 cycles, respectively.
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Affiliation(s)
- Xiaoyan Qian
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu215123, China
| | - Yang Shen
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu215123, China
| | - Liu-Jiang Zhang
- Shanghai Institute of Applied Physics, Shanghai Synchrotron Radiation Facility, Zhangjiang Laboratory, Chinese Academy of Sciences, Shanghai201204, China
| | - Minglei Guo
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu215123, China
| | - Xiao-Yi Cai
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu215123, China
| | - Yu Lu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu215123, China
| | - Huimin Liu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu215123, China
| | - Ye-Fan Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu215123, China
| | - Yanqing Tang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu215123, China
| | - Li Chen
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu215123, China
| | - Yingyi Tang
- School of Physics and Electronic Science, Ministry of Education Nanophotonics & Advanced Instrument Engineering Research Center, East China Normal University, Shanghai200062, China
| | - Jingkun Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu215123, China
| | - Wei Zhou
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu215123, China
| | - Xingyu Gao
- Shanghai Institute of Applied Physics, Shanghai Synchrotron Radiation Facility, Zhangjiang Laboratory, Chinese Academy of Sciences, Shanghai201204, China
| | - HongYing Mao
- School of Physics, Hangzhou Normal University, Hangzhou311121, China
| | - Yanqing Li
- School of Physics and Electronic Science, Ministry of Education Nanophotonics & Advanced Instrument Engineering Research Center, East China Normal University, Shanghai200062, China
| | - Jian-Xin Tang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu215123, China
- Macao Institute of Materials Science and Engineering (MIMSE), Faculty of Innovation Engineering, Macau University of Science and Technology, Taipa999078, Macao, China
| | - Shuit-Tong Lee
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu215123, China
- Macao Institute of Materials Science and Engineering (MIMSE), Faculty of Innovation Engineering, Macau University of Science and Technology, Taipa999078, Macao, China
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20
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Jia W, Wei Z, Liu B, Yan D, Huang Y, Li M, Tao Y, Chen R, Xu L. Dopamine Hydrochloride-Assisted Synergistic Modulation of Perovskite Crystallization and Sn 2+ Oxidation for Efficient and Stable Lead-free Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2022; 14:46801-46808. [PMID: 36215120 DOI: 10.1021/acsami.2c11472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Tin perovskites have received great concern in solar cell research owing to their favorable optoelectronic performance and environmental friendliness. However, due to their poor crystallization and easy oxidation, the performance improvement for tin-based perovskite solar cells (TPSCs) is rather challenging. Herein, reductive 3-hydroxytyramine hydrochloride (DACl) with NH2·HCl and phenol groups as co-additives with SnF2 is added into the precursor to modulate perovskite crystallization and inhibit Sn2+ oxidation for high-performance TPSCs. The Lewis base group of NH2 HCl in DACl could bind to perovskite lattices to modulate the crystallization with suppressed defects in the bulk and grain boundary, whereas reductive phenol groups effectively constrain the Sn2+ oxidation. Moreover, the undissociated DACl decreases the supersaturated concentration of tin perovskite solution and creates a pre-nucleation site for rapid nucleation to further regulate crystallization. Consequently, the DACl-derived TPSCs achieve a high power-conversion efficiency (PCE) that reaches up to 11%. More impressively, the device remains at 84% of the initial PCE after full-sun illumination in N2 over 600 h without being encapsulated. This DACl-based synergistic modulation of a lead-free perovskite demonstrates a feasible approach using one molecule with different functional groups to manipulate crystallization, Sn2+ oxidation, and defect reparation of tin perovskite films, providing a critical guideline for constructing high-quality perovskites by multifunctional additives with high photovoltaic performance.
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Affiliation(s)
- Wenbo Jia
- Key Laboratory for Organic Electronics and Information Displays (KLOEID) & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing210023, China
| | - Zijie Wei
- Key Laboratory for Organic Electronics and Information Displays (KLOEID) & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing210023, China
| | - Bingxu Liu
- Key Laboratory for Organic Electronics and Information Displays (KLOEID) & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing210023, China
| | - Dongdong Yan
- Key Laboratory for Organic Electronics and Information Displays (KLOEID) & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing210023, China
| | - Yunze Huang
- Key Laboratory for Organic Electronics and Information Displays (KLOEID) & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing210023, China
| | - Meicheng Li
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of New Energy, North China Electric Power University, Beijing102206, China
| | | | - Runfeng Chen
- Key Laboratory for Organic Electronics and Information Displays (KLOEID) & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing210023, China
| | - Ligang Xu
- Key Laboratory for Organic Electronics and Information Displays (KLOEID) & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing210023, China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, China
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21
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Zhang F, Min H, Zhang Y, Kuang Z, Wang J, Feng Z, Wen K, Xu L, Yang C, Shi H, Zhuo C, Wang N, Chang J, Huang W, Wang J. Vapor-Assisted In Situ Recrystallization for Efficient Tin-Based Perovskite Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203180. [PMID: 35906760 DOI: 10.1002/adma.202203180] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2022] [Revised: 06/10/2022] [Indexed: 06/15/2023]
Abstract
Tin-based perovskites are a promising candidates to replace their toxic lead-based counterparts in optoelectronic applications, such as light-emitting diodes (LEDs). However, the development of tin perovskite LEDs is slow due to the challenge of obtaining high-quality tin perovskite films. Here, a vapor-assisted spin-coating method is developed to achieve high-quality tin perovskites and high-efficiency LEDs. It is revealed that solvent vapor can lead to in situ recrystallization of tin perovskites during the film-formation process, thus significantly improving the crystalline quality with reduced defects. An antioxidant additive is further introduced to suppress the oxidation of Sn2+ and increase the photoluminescence quantum efficiency up to ≈30%, which is an approximately fourfold enhancement in comparison with that of the control method. As a result, efficient tin perovskite LEDs are achieved with a peak external quantum efficiency of 5.3%, which is among the highest efficiency of lead-free perovskite LEDs.
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Affiliation(s)
- Fang Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Hao Min
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Ya Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Zhiyuan Kuang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Jiaqi Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Ziqian Feng
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Kaichuan Wen
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Lei Xu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Chao Yang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Haokun Shi
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Chunxue Zhuo
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Nana Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Jin Chang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
- Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an, Shaanxi, 710072, China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, China
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, China
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22
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Shen Y, Zhou J, Li Y, Tang JX. Strategies to Improve the Stability of Perovskite Light-Emitting Diodes: Progress and Perspective. J Phys Chem Lett 2022; 13:6806-6819. [PMID: 35857377 DOI: 10.1021/acs.jpclett.2c01774] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Perovskite light-emitting diodes (PeLEDs) featuring excellent electroluminescent (EL) characteristics and facile production have been emerging as promising candidates for next-generation high-definition displays. In recent years, tremendous advances have been achieved in the EL efficiency of PeLEDs. However, their poor operational stability impedes practical applications. Particularly, the severe spectral instability of pure-blue and pure-red PeLEDs lags far behind the requirements of commercial displays. In this Perspective, the critical factors related to device degradation are first summarized, including perovskite crystal defects, unbalanced charge injection, Auger recombination, and Joule heating. Then, the recent progress in improving the operational and spectral stabilities is reviewed in categories. Considering the present achievements, we provide potential research directions for further development of stable PeLEDs.
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Affiliation(s)
- Yang Shen
- Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Zhuhai MUST Science and Technology Research Institute, Macau University of Science and Technology, Taipa 999078, Macao, China
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China
| | - Jingxiong Zhou
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China
| | - Yanqing Li
- School of Physics and Electronic Science, Ministry of Education Nanophotonics & Advanced Instrument Engineering Research Center, East China Normal University, Shanghai 200062, China
| | - Jian-Xin Tang
- Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Zhuhai MUST Science and Technology Research Institute, Macau University of Science and Technology, Taipa 999078, Macao, China
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China
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Li J, Li B, Meng M, Sun L, Jiang M. Interface engineering enhanced near-infrared electroluminescence in an n-ZnO microwire/p-GaAs heterojunction. OPTICS EXPRESS 2022; 30:24773-24787. [PMID: 36237023 DOI: 10.1364/oe.459837] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2022] [Accepted: 06/15/2022] [Indexed: 06/16/2023]
Abstract
Interface engineering in the fabrication of low-dimensional optoelectronic devices has been highlighted in recent decades to enhance device characteristics such as reducing leakage current, optimizing charge transport, and modulating the energy-band structure. In this paper, we report a dielectric interface approach to realize one-dimensional (1D) wire near-infrared light-emitting devices with high brightness and enhanced emission efficiency. The light-emitting diode is composed of a zinc oxide microwire covered by a silver nanolayer (Ag@ZnO MW), magnesium oxide (MgO) buffer layer, and p-type gallium arsenide (GaAs) substrate. In the device structure, the insertion of a MgO dielectric layer in the n-ZnO MW/p-GaAs heterojunction can be used to modulate the device features, such as changing the charge transport properties, reducing the leakage current and engineering the band alignment. Furthermore, the cladding of the Ag nanolayer on the ZnO MW can optimize the junction interface quality, thus reducing the turn-on voltage and increasing the current injection and electroluminescence (EL) efficiency. The combination of MgO buffer layer and Ag nanolayer cladding can be utilized to achieve modulating the carrier recombination path, interfacial engineering of heterojunction with optimized band alignment and electronic structure in these carefully designed emission devices. Besides, the enhanced near-infrared EL and improved physical contact were also obtained. The study of current transport modulation and energy-band engineering proposes an original and efficient route for improving the device performances of 1D wire-type heterojunction light sources.
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24
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Sun J, Zheng W, Huang P, Zhang M, Zhang W, Deng Z, Yu S, Jin M, Chen X. Efficient Near-Infrared Luminescence in Lanthanide-Doped Vacancy-Ordered Double Perovskite Cs 2 ZrCl 6 Phosphors via Te 4+ Sensitization. Angew Chem Int Ed Engl 2022; 61:e202201993. [PMID: 35438824 DOI: 10.1002/anie.202201993] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/06/2022] [Indexed: 01/02/2023]
Abstract
All-inorganic lead-free perovskite-derivative metal halides have shown great promise in optoelectronics, however, it remains challenging to realize efficient near-infrared (NIR) luminescence in these materials. Herein, we report a novel strategy based on Te4+ /Ln3+ (Ln=Er, Nd, and Yb) co-doping to achieve efficient NIR luminescence in vacancy-ordered double perovskite Cs2 ZrCl6 phosphors, which are excitable by a low-cost near-ultraviolet light-emitting diode (LED) chip. Through sensitization by the spin-orbital allowed 1 S0 →3 P1 transition of Te4+ , intense and multi-wavelength NIR luminescence originating from the 4f→4f transitions of Er3+ , Nd3+ , and Yb3+ was acquired, with a quantum yield of 6.1 % for the Er3+ emission. These findings provide a general approach to achieve efficient NIR emission in lead-free metal halides through ns2 -metal and lanthanide ion co-doping, thereby opening up a new avenue for exploring NIR-emitting perovskite derivatives towards versatile applications such as NIR-LEDs and bioimaging.
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Affiliation(s)
- Jinyue Sun
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.,School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.,Fujian College, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Wei Zheng
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.,Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, China.,Fujian College, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ping Huang
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.,Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, China.,Fujian College, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Meiran Zhang
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.,Fujian College, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Wen Zhang
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.,Fujian College, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhonghua Deng
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Shaohua Yu
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Mengyao Jin
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Xueyuan Chen
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.,School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.,Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, China.,Fujian College, University of Chinese Academy of Sciences, Beijing, 100049, China
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25
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Liu M, Zhao R, Sun F, Zhang P, Zhang R, Chen Z, Li S. Wavelength-Tuneable Near-Infrared Luminescence in Mixed Tin-Lead Halide Perovskites. Front Chem 2022; 10:887983. [PMID: 35711964 PMCID: PMC9194474 DOI: 10.3389/fchem.2022.887983] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/02/2022] [Accepted: 05/16/2022] [Indexed: 11/24/2022] Open
Abstract
Near-infrared light-emitting diodes (NIR-LEDs) are widely used in various applications such as night-vision devices, optical communication, biological imaging and optical diagnosis. The current solution-processed high-efficiency perovskite NIR-LEDs are typically based on CsPbI3 and FAPbI3 with emission peaks being limited in the range of 700–800 nm. NIR-LEDs with longer emission wavelengths near to 900 nm can be prepared by replacing Pb with Sn. However, Sn-based perovskite LEDs usually exhibit a low efficiency owing to the high concentration of Sn-related defects and the rapid oxidation of Sn2+ to Sn4+, which further induces the device degradation. These problems can be solved by rationally adjusting the ratio between Pb content with Sn. Mixed Sn-Pb halide perovskites with a smaller bandgap and superior stability than pure Sn-based perovskites are promising candidates for manufacturing next-generation NIR emitters. In this study, we systematically investigated the optical properties of a family of hybrid Sn and Pb iodide compounds. The emission spectra of the mixed Sn-Pb halide perovskites were tuned by changing the Sn:Pb ratio. Consequently, the peak emission wavelength red-shifted from 710 nm to longer than 950 nm. The absorption and photoluminescence emission properties associated with different compositions were compared, and the results demonstrated the potential of MA- and FA-based mixed Sn-Pb halide perovskites for preparing low-cost and efficient NIR-LEDs. In addition, we clarified the influence of cations on the bandgap bowing effect and electronic properties of mixed Sn-Pb halide perovskites.
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Affiliation(s)
- Meiyue Liu
- Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, China
| | - Ru Zhao
- Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, China
| | - Fuhao Sun
- Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, China
| | - Putao Zhang
- Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, China
| | - Rui Zhang
- Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, China
| | - Zeng Chen
- Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, China
| | - Shengjun Li
- Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, China
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26
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Sun J, Zheng W, Huang P, Zhang M, Zhang W, Deng Z, Yu S, Jin M, Chen X. Efficient Near‐Infrared Luminescence in Lanthanide‐Doped Vacancy‐Ordered Double Perovskite Cs
2
ZrCl
6
Phosphors via Te
4+
Sensitization. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202201993] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Jinyue Sun
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 China
- School of Physical Science and Technology ShanghaiTech University Shanghai 201210 China
- Fujian College University of Chinese Academy of Sciences Beijing 100049 China
| | - Wei Zheng
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou Fujian 350108 China
- Fujian College University of Chinese Academy of Sciences Beijing 100049 China
| | - Ping Huang
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou Fujian 350108 China
- Fujian College University of Chinese Academy of Sciences Beijing 100049 China
| | - Meiran Zhang
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 China
- Fujian College University of Chinese Academy of Sciences Beijing 100049 China
| | - Wen Zhang
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 China
- Fujian College University of Chinese Academy of Sciences Beijing 100049 China
| | - Zhonghua Deng
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 China
| | - Shaohua Yu
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 China
| | - Mengyao Jin
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 China
| | - Xueyuan Chen
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 China
- School of Physical Science and Technology ShanghaiTech University Shanghai 201210 China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou Fujian 350108 China
- Fujian College University of Chinese Academy of Sciences Beijing 100049 China
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27
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Byranvand MM, Zuo W, Imani R, Pazoki M, Saliba M. Tin-based halide perovskite materials: properties and applications. Chem Sci 2022; 13:6766-6781. [PMID: 35774180 PMCID: PMC9200135 DOI: 10.1039/d2sc01914k] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/03/2022] [Accepted: 05/23/2022] [Indexed: 11/21/2022] Open
Abstract
Organic–inorganic hybrid halide perovskite materials have attracted considerable research interest, especially for photovoltaics. In addition, their scope has been extended towards light-emitting devices, photodetectors, or detectors. However, the toxicity of lead (Pb) element in perovskite compositions limits their applications. Therefore, a tremendous research effort on replacing is underway. More specifically, tin-based perovskites have shown the highest potential for this purpose. However, many challenges remain before these materials reach the goals of stability, safety, and eventually commercial application. This perspective considers many aspects and the critical development possibilities of tin-based perovskites, including drawbacks and challenges based on their physical properties. Additionally, it provides insights for future device applications that go beyond solar cells. Finally, the existing challenges and opportunities in tin-based perovskites are discussed. This perspective presents the current status and prospects of tin-perovskites and the relevant optoelectronic device applications.![]()
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Affiliation(s)
- Mahdi Malekshahi Byranvand
- Institute for Photovoltaics (ipv), University of Stuttgart Pfafenwaldring 47 70569 Stuttgart Germany
- Helmholtz Young Investigator Group FRONTRUNNER, IEK5-Photovoltaik Forschungszentrum Jülich 52425 Jülich Germany
| | - Weiwei Zuo
- Institute for Photovoltaics (ipv), University of Stuttgart Pfafenwaldring 47 70569 Stuttgart Germany
| | - Roghayeh Imani
- Institute for Photovoltaics (ipv), University of Stuttgart Pfafenwaldring 47 70569 Stuttgart Germany
| | - Meysam Pazoki
- Institute for Photovoltaics (ipv), University of Stuttgart Pfafenwaldring 47 70569 Stuttgart Germany
| | - Michael Saliba
- Institute for Photovoltaics (ipv), University of Stuttgart Pfafenwaldring 47 70569 Stuttgart Germany
- Helmholtz Young Investigator Group FRONTRUNNER, IEK5-Photovoltaik Forschungszentrum Jülich 52425 Jülich Germany
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28
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Wang H, Zhang C, Huang W, Zou X, Chen Z, Sun S, Zhang L, Li J, Cheng J, Huang S, Gu M, Chen X, Guo X, Gui R, Wang W. Research progress of ABX 3-type lead-free perovskites for optoelectronic applications: materials and devices. Phys Chem Chem Phys 2022; 24:27585-27605. [DOI: 10.1039/d2cp02451a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
We summarize the development and application of ABX3-type lead-free halide perovskite materials, especially in optoelectronic devices.
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Affiliation(s)
- Hao Wang
- Beijing Key Laboratory for Sensor, Beijing Information Science and Technology University, Beijing 100101, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Information Science and Technology University, Beijing 100101, China
- School of Applied Science, Beijing Information Science and Technology University, Beijing 100101, China
| | - Chunqian Zhang
- Beijing Key Laboratory for Sensor, Beijing Information Science and Technology University, Beijing 100101, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Information Science and Technology University, Beijing 100101, China
- School of Applied Science, Beijing Information Science and Technology University, Beijing 100101, China
| | - Wenqi Huang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Information Science and Technology University, Beijing 100101, China
- School of Applied Science, Beijing Information Science and Technology University, Beijing 100101, China
| | - Xiaoping Zou
- Beijing Key Laboratory for Sensor, Beijing Information Science and Technology University, Beijing 100101, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Information Science and Technology University, Beijing 100101, China
- School of Applied Science, Beijing Information Science and Technology University, Beijing 100101, China
| | - Zhenyu Chen
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Information Science and Technology University, Beijing 100101, China
- School of Applied Science, Beijing Information Science and Technology University, Beijing 100101, China
| | - Shengliu Sun
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Information Science and Technology University, Beijing 100101, China
- School of Applied Science, Beijing Information Science and Technology University, Beijing 100101, China
| | - Lixin Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Information Science and Technology University, Beijing 100101, China
- School of Applied Science, Beijing Information Science and Technology University, Beijing 100101, China
| | - Junming Li
- Beijing Key Laboratory for Sensor, Beijing Information Science and Technology University, Beijing 100101, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Information Science and Technology University, Beijing 100101, China
- School of Applied Science, Beijing Information Science and Technology University, Beijing 100101, China
| | - Jin Cheng
- Beijing Key Laboratory for Sensor, Beijing Information Science and Technology University, Beijing 100101, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Information Science and Technology University, Beijing 100101, China
- School of Applied Science, Beijing Information Science and Technology University, Beijing 100101, China
| | - Shixian Huang
- Beijing Key Laboratory for Sensor, Beijing Information Science and Technology University, Beijing 100101, China
| | - Mingkai Gu
- Beijing Key Laboratory for Sensor, Beijing Information Science and Technology University, Beijing 100101, China
| | - Xinyao Chen
- Beijing Key Laboratory for Sensor, Beijing Information Science and Technology University, Beijing 100101, China
| | - Xin Guo
- Beijing Key Laboratory for Sensor, Beijing Information Science and Technology University, Beijing 100101, China
| | - Ruoxia Gui
- Beijing Key Laboratory for Sensor, Beijing Information Science and Technology University, Beijing 100101, China
| | - Weimin Wang
- Beijing Key Laboratory for Sensor, Beijing Information Science and Technology University, Beijing 100101, China
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