Dendritic CsSnI3 for Efficient and Flexible Near-Infrared Perovskite Light-Emitting Diodes

High defect tolerance β-CsSnI3 perovskite light-emitting diodes

All-inorganic lead-free CsSnI3 has shown promising potential in optoelectronic applications, particularly in near-infrared perovskite light-emitting diodes (Pero-LEDs). However, non-radiative recombination induced by defects hinders the optoelectronic properties of CsSnI3-based Pero-LEDs, limiting their potential applications. Here, we uncovered that β-CsSnI3 exhibits higher defect tolerance compared to orthorhombic γ-CsSnI3, offering a potential for enhancing the emission efficiency. We further reported on the deposition and stabilization of highly crystalline β-CsSnI3 films with the assistance of cesium formate to suppress electron-phonon scattering and reduce nonradiative recombination. This leads to an enhanced photoluminescence quantum yield up to ∼10%. As a result, near-infrared LEDs based on β-CsSnI3 emitters are achieved with a peak external quantum efficiency of 1.81% and excellent stability under a high current injection of 1.0 A cm-2.

Enhancing the Performance of 2D Tin-Based Pure Red Perovskite Light-Emitting Diodes through the Synergistic Effect of Natural Antioxidants and Cyclic Molecular Additives

Tin (Sn)-based perovskites are being investigated in many optoelectronic applications given their similar valence electron configuration to that of lead-based perovskites and the potential environmental hazards of lead-based perovskites. However, the formation of high-quality Sn-based perovskite films faces several challenges, mainly due to the easy oxidation of Sn2+ to Sn4+ and the fast crystallization rate. Here, to develop an environmentally friendly process for Sn-based perovskite fabrication, a series of natural antioxidants are studied as additives and ascorbic acid (VitC) is found to have a superior ability to inhibit the oxidation problem. A common cyclic molecule, 18-Crown-6, is further added as a second additive, which synergizes with VitC to significantly reduce the nonradiative recombination pathways in the PEA2SnI4 film. This synergistic effect greatly improves the performance of 2D red Sn-based PeLED, with a maximum external quantum efficiency of 1.87% (≈9 times that of the pristine device), a purer color, and better bias stability. This work demonstrates the potential of the dual-additive approach in enhancing the performance of 2D Sn-based PeLEDs, while the use of these environmentally friendly additives contributes to their future sustainability.

Spin coating epitaxial heterodimensional tin perovskites for light-emitting diodes

Environmentally friendly tin (Sn) perovskites have received considerable attention due to their great potential for replacing their toxic lead counterparts in applications of photovoltaics and light-emitting diodes (LEDs). However, the device performance of Sn perovskites lags far behind that of lead perovskites, and the highest reported external quantum efficiencies of near-infrared Sn perovskite LEDs are below 10%. The poor performance stems mainly from the numerous defects within Sn perovskite crystallites and grain boundaries, leading to serious non-radiative recombination. Various epitaxy methods have been introduced to obtain high-quality perovskites, although their sophisticated processes limit the scalable fabrication of functional devices. Here we demonstrate that epitaxial heterodimensional Sn perovskite films can be fabricated using a spin-coating process, and efficient LEDs with an external quantum efficiency of 11.6% can be achieved based on these films. The film is composed of a two-dimensional perovskite layer and a three-dimensional perovskite layer, which is highly ordered and has a well-defined interface with minimal interfacial areas between the different dimensional perovskites. This unique nanostructure is formed through direct spin coating of the perovskite precursor solution with tryptophan and SnF2 additives onto indium tin oxide glass. We believe that our approach will provide new opportunities for further developing high-performance optoelectronic devices based on heterodimensional perovskites.

Near-Infrared Light Emitting Metal Halides: Materials, Mechanisms, and Applications

Near-Infrared (NIR) light emitting metal halides are emerging as a new generation of optical materials owing to their appealing features, which include low-cost synthesis, solution processability, and adjustable optical properties. NIR-emitting perovskite-based light-emitting diodes (LEDs) have reached an external quantum efficiency (EQE) of over 20% and a device stability of over 10,000 h. Such results have sparked an interest in exploring new NIR metal halide emitters. In this review, several different types of NIR-emitting metal halides, including lead/tin bromide/iodide perovskites, lanthanide ions doped/based metal halides, double perovskites, low dimensional hybrid and Bi3+/Sb3+/Cr3+ doped metal halides, are summarized, and their recent advancement is assessed. The characteristics and mechanisms of narrow-band or broadband NIR luminescence in all these materials are discussed in detail. Also, the various applications of NIR-emitting metal halides are highlighted and an outlook for the field is provided.

Improving the Operational Lifetime of Metal-Halide Perovskite Light-Emitting Diodes with Dimension Control and Ligand Engineering

Perovskite light-emitting diodes (LEDs) have emerged as one of the most propitious candidates for next-generation lighting and displays, with the highest external quantum efficiency (EQE) of perovskite LEDs already surpassing the 20% milestone. However, the further development of perovskite LEDs primarily relies on addressing operational instability issues. This Perspective examines some of the key factors that impact the lifetime of perovskite LED devices and some representative reports on recent advancements aimed at improving the lifetime. Our analysis underscores the significance of "nano" strategies in achieving long-term stable perovskite LEDs. Significant efforts must be directed toward proper device encapsulation, perovskite material passivation, interfacial treatment to address environment-induced material instability, bias-induced phase separation, and ion migration issues.

Polarity-Mediated Antisolvent Control Enables Efficient Lanthanide-Based near-Infrared Perovskite LEDs

Alloying lanthanide ions (Yb3+) into perovskite quantum dots (Yb3+:CsPb(Cl1-xBrx)3) is an effective method to achieve efficient near-infrared (NIR) luminescence (>950 nm). Increasing the Yb3+ alloying ratio in the perovskite matrix enhances the luminescence intensity of Yb3+ emission at 990 nm. However, high Yb3+ alloying (>15%) results in vacancy-induced inferior material stability. In this work, we developed a polarity-mediated antisolvent manipulation strategy to resolve the incompatibility between a high Yb3+ alloying ratio and inferior stability of Yb3+:CsPb(Cl1-xBrx)3. Precise control of solution polarity enables increased uniformity of the perovskite matrix with fewer trap densities. Employing this strategy, we obtain Yb3+:CsPb(Cl1-xBrx)3 with the highest Yb3+ alloying ratio of 30.2% and a 2-fold higher electroluminescence intensity at 990 nm. We lever the engineered Yb3+:CsPb(Cl1-xBrx)3 to fabricate NIR-LEDs, achieving a peak external quantum efficiency (EQE) of 8.5% at 990 nm: this represents the highest among perovskite NIR-LEDs with an emission wavelength above 950 nm.

Recent Progress of Low-Toxicity Poor-Lead All-Inorganic Perovskite Solar Cells

Organic-inorganic hybrid perovskite solar cells (PSCs) have achieved an impressive certified efficiency of 25.7%, which is comparatively higher than that of commercial silicon solar cells (23.3%), showing great potential toward commercialization. However, the low stability and high toxicity due to the presence of volatile organic components and toxic metal lead in the perovskites pose significant challenges. To obtain robust and low-toxicity PSCs, substituting organic cations with pure inorganic cations, and partially or fully replacing the toxic Pb with environmentally benign metals, is one of the promising methods. To date, continuous efforts have been made toward the construction of highly performed low-toxicity inorganic PSCs with astonishing breakthroughs. This review article provides an overview of recent progress in inorganic PSCs in terms of lead-reduced and lead-free compositions. The physical properties of poor-lead all-inorganic perovskites are discussed to unveil the major challenges in this field. Then, it reports notable achievements for the experimental studies to date to figure out feasible methods for efficient and stable poor-lead all-inorganic PSCs. Finally, a discussion of the challenges and prospects for poor-lead all-inorganic PSCs in the future is presented.

Highly efficient and stable Cs3Mn0.93Zn0.07Br5@SiO2 for wide color gamut backlight displays

Mn-based perovskites have become a new candidate material for backlight display applications. However, low efficiency and poor stability are the key problems limiting the application of Mn-based perovskites. In this work, Zn-doped and SiO2-encapsulated Cs3MnBr5, denoted as Cs3Mn0.93Zn0.07Br5@SiO2 (CMZBS), was successfully synthesized to improve the photoluminescence quantum yield (PLQY) and stability. After Zn doping, the PLQY increased from 51% to 72% due to the reduction in the energy transfer between [MnBr4]2-. The PLQY can be further improved to 80% after coating SiO2. Compared with Cs3MnBr5 (CMB), CMZBS showed better stability against thermal, air, light, and polar solvents (ethanol and isopropanol). In addition, a white LED (WLED) device with a CIE of (0.323, 0.325) was fabricated by integrating CMZBS and the red phosphor K2SiF6:Mn4+ on a 465 nm blue GaN chip, which exhibited a high luminous efficiency of 92 lm W-1 and excellent stability, demonstrating its great potential application in wide color gamut displays.

Ligand Engineering Enables Efficient Pure Red Tin-Based Perovskite Light-Emitting Diodes

With increasing ecological and environmental concerns, tin (Sn)-based perovskite light-emitting diodes (PeLEDs) are competitive candidates for future displays because of their environmental friendliness, excellent photoelectric properties, and low-cost solution-processed fabrication. Nonetheless, their electroluminescence (EL) performance still lags behind that of lead (Pb)-based PeLEDs due to the fast crystallization rate of Sn-based perovskite films and undesired oxidation from Sn2+ to Sn4+ , leading to poor film morphology and coverage, as well as high density defects. Here, we propose a ligand engineering strategy to construct high-quality phenethylammonium tin iodide (PEA2 SnI4 ) perovskite films by using L-glutathione reduced (GSH) as surface ligands toward efficient pure red PEA2 SnI4 -based PeLEDs. We show that the hydrogen-bond and coordinate interactions between GSH and PEA2 SnI4 effectively reduce the crystallization rate of the perovskites and suppress the oxidation of Sn2+ and formation of defects. The improved pure red perovskite films not only show excellent uniformity, density, and coverage but also exhibit enhanced optical properties and stability. Finally, state-of-the-art pure red PeLEDs achieve a record external quantum efficiency of 9.32 % in the field of PEA2 SnI4 -based devices. This work demonstrates that ligand engineering represents a feasible route to enhance the EL performance of Sn-based PeLEDs.

Synergistic Enhancement of Near-Infrared Emission in CsPbCl3 Host via Co-Doping with Yb3+ and Nd3+ for Perovskite Light Emitting Diodes

Perovskite nanocrystals (PeNCs) have emerged as a promising class of luminescent materials offering size and composition-tunable luminescence with high efficiency and color purity in the visible range. PeNCs doped with Yb3+ ions, known for their near-infrared (NIR) emission properties, have gained significant attention due to their potential applications. However, these materials still face challenges with weak NIR electroluminescence (EL) emission and low external quantum efficiency (EQE), primarily due to undesired resonance energy transfer (RET) occurring between the host and Yb3+ ions, which adversely affects their emission efficiency and device performance. Herein, we report the synergistic enhancement of NIR emission in a CsPbCl3 host through co-doping with Yb3+/Nd3+ ions for perovskite LEDs (PeLEDs). The co-doping of Yb3+/Nd3+ ions in a CsPbCl3 host resulted in enhanced NIR emission above 1000 nm, which is highly desirable for NIR optoelectronic applications. This cooperative energy transfer between Yb3+ and Nd3+ can enhance the overall efficiency of energy conversion. Furthermore, the PeLEDs incorporating the co-doped CsPbCl3/Yb3+/Nd3+ PeNCs as an emitting layer exhibited significantly enhanced NIR EL compared to the single doped PeLEDs. The optimized co-doped PeLEDs showed improved device performance, including increased EQE of 6.2% at 1035 nm wavelength and low turn-on voltage. Our findings highlight the potential of co-doping with Yb3+ and Nd3+ ions as a strategy for achieving synergistic enhancement of NIR emission in CsPbCl3 perovskite materials, which could pave the way for the development of highly efficient perovskite LEDs for NIR optoelectronic applications.

Tautomeric mixture coordination enables efficient lead-free perovskite LEDs

Lead halide perovskite light-emitting diodes (PeLEDs) have demonstrated remarkable optoelectronic performance1-3. However, there are potential toxicity issues with lead4,5 and removing lead from the best-performing PeLEDs-without compromising their high external quantum efficiencies-remains a challenge. Here we report a tautomeric-mixture-coordination-induced electron localization strategy to stabilize the lead-free tin perovskite TEA2SnI4 (TEAI is 2-thiopheneethylammonium iodide) by incorporating cyanuric acid. We demonstrate that a crucial function of the coordination is to amplify the electronic effects, even for those Sn atoms that aren't strongly bonded with cyanuric acid owing to the formation of hydrogen-bonded tautomeric dimer and trimer superstructures on the perovskite surface. This electron localization weakens adverse effects from Anderson localization and improves ordering in the crystal structure of TEA2SnI4. These factors result in a two-orders-of-magnitude reduction in the non-radiative recombination capture coefficient and an approximately twofold enhancement in the exciton binding energy. Our lead-free PeLED has an external quantum efficiency of up to 20.29%, representing a performance comparable to that of state-of-the-art lead-containing PeLEDs6-12. We anticipate that these findings will provide insights into the stabilization of Sn(II) perovskites and further the development of lead-free perovskite applications.

Enhanced Charge Balance for Efficient Electroluminescence from Cesium Copper Halides

Cesium copper halides have the advantages of high photoluminescence quantum efficiency and good stability, making them attractive for replacing toxic lead halides in the field of perovskite light-emitting diodes (LEDs). However, due to their shallow conduction band and the lack of electron transport layers compatible with it, it remains a great challenge to achieve charge balance in LED devices. This drawback manifests as the accumulation of holes at the interface between the emitting layer and electron transport layer, resulting in nonradiative recombination. Here, we demonstrate an effective approach to address this issue by suppressing hole injection, which is realized through modification of the poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) layer with polyethylenimine. This leads to cesium-copper-halide LEDs with a high external quantum efficiency of 5.6%, representing an advance in device architecture for efficient electroluminescence from cesium copper halides.

Advances in the Application of Perovskite Materials

Nowadays, the soar of photovoltaic performance of perovskite solar cells has set off a fever in the study of metal halide perovskite materials. The excellent optoelectronic properties and defect tolerance feature allow metal halide perovskite to be employed in a wide variety of applications. This article provides a holistic review over the current progress and future prospects of metal halide perovskite materials in representative promising applications, including traditional optoelectronic devices (solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices (artificial synapses and memristors) and pressure-induced emission. This review highlights the fundamentals, the current progress and the remaining challenges for each application, aiming to provide a comprehensive overview of the development status and a navigation of future research for metal halide perovskite materials and devices.

All-inorganic lead halide perovskite nanocrystals applied in advanced display devices

Advanced display devices are in greater demand due to their large color gamut, high color purity, ultrahigh visual resolution, and small size pixels. All-inorganic lead halide perovskite (AILHP) nanocrystals (NCs) possess inherent advantages such as narrow emission width, saturated color, and flexible integration, and have been developed as functional films, light sources, backlight components, and display panels. However, some drawbacks still restrict the practical application of advanced display devices based on AILHP NCs, including working stability, large-scale synthesis, and cost. In this review, we focus on AILHP NCs, review the recent progress in materials synthesis, stability improvement, patterning techniques, and device application. We also highlight the important role of materials systems in creating advanced display devices, followed by the challenges and opportunities in industrial processes. This review provides beneficial inspiration for the future development of AILHP NCs in colorful and white backlight, as well as high resolution full-color displays.

Phase Regulation and Defect Passivation Enabled by Phosphoryl Chloride Molecules for Efficient Quasi-2D Perovskite Light-Emitting Diodes

HIGHLIGHTS

The modification of perovskite precursor by a series of phosphoryl chloride molecules can indeed improve the performance of perovskite LEDs (Pero-LEDs). The bis(2-oxo-3-oxazolidinyl) phosphinic chloride can not only regulate the phase distribution by controlling the crystallization rate but also passivate the defects of the quasi-2D perovskite. Highly efficient and reproducible Pero-LEDs are achieved with an maximum external quantum efficiency (EQEmax) of 20.82% and an average EQE (EQEave) of around 20% on 50 devices. Quasi-2D perovskites have attracted tremendous interest for application as light-emission layers in light-emitting diodes (LEDs). However, the heterogeneous n phase and non-uniform distribution still severely limit the further development of quasi-2D perovskite LEDs (Pero-LEDs). Meanwhile, the increased defect density caused by the reduced dimension and grain size induces non-radiative recombination and further deteriorates the device performance. Here, we found that a series of molecules containing phosphoryl chloride functional groups have noticeable enhancement effects on the device performance of quasi-2D Pero-LEDs. Then, we studied the modification mechanism by focusing on the bis(2-oxo-3-oxazolidinyl) phosphinic chloride (BOPCl). It is concluded that the BOPCl can not only regulate the phase distribution by decreasing the crystallization rate but also remain in the grain boundaries and passivate the defects. As a result, the corresponding quasi-2D Pero-LEDs obtained a maximum external quantum efficiency (EQEmax) of 20.82% and an average EQE (EQEave) of around 20% on the optimal 50 devices, proving excellent reproducibility. Our work provides a new selection of molecular types for regulating the crystallization and passivating the defects of quasi-2D perovskite films.

Effect of aliovalent bismuth substitution on structure and optical properties of CsSnBr3

Aliovalent substitution of the B component in ABX₃ metal halides has often been proposed to modify the band gap and thus the photovoltaic properties, but details about the resulting structure have remained largely unknown. Here, we examine these effects in Bi-substituted CsSnBr₃. Powder X-ray diffraction (XRD) and solid-state ¹¹⁹Sn, ¹³³Cs and ²⁰⁹Bi nuclear magnetic resonance (NMR) spectroscopy were carried out to infer how Bi substitution changes the structure of these compounds. The cubic perovskite structure is preserved upon Bi-substitution, but with disorder in the B site occurring at the atomic level. Bi atoms are randomly distributed as they substitute for Sn atoms with no evidence of Bi segregation. The absorption edge in the optical spectra shifts from 1.8 to 1.2 eV upon Bi-substitution, maintaining a direct band gap according to electronic structure calculations. It is shown that Bi-substitution improves resistance to degradation by inhibiting the oxidation of Sn.

Stabilizing FASnI3-based perovskite light-emitting diodes with crystallization control

The toxicity of lead presents a critical challenge for the application of perovskite optoelectronics. Lead-free perovskite solar cells were achieved with formamidinium tin iodide (FASnI₃) perovskites, exhibiting decent power-conversion efficiencies (PCEs) of up to 14%, with >98% of the initial PCE retained after 3000 h of storage. However, when employed in light-emitting applications, FASnI₃-based perovskite LEDs (PeLEDs) show limited stability, with T₅₀ lifetimes of up to 0.25 h at 10 mA cm^-2. Here, we improve the stability of FASnI₃-based PeLEDs through the inclusion of a two-dimensional precursor phenethylamine iodide (PEAI), allowing controlled crystallization of the mixed-dimensional perovskite emitters. The density of defects is found to be reduced, accompanied by the suppression of oxidation from Sn²⁺ to Sn⁴⁺. Using an optimized perovskite composition, we achieve an EQE of 1.5% (a ∼10-fold improvement over the control devices), a maximum radiance of 145 W sr^-1 m^-2, and a record-long T₅₀ lifetime of 10.3 h at 100 mA cm^-2 for FASnI₃-based PeLEDs. Our results illuminate an alternative path toward lead-free PeLED applications.

Advances in electrically driven light-emitting diodes based on lead-free metal halides

The emerging lead halide perovskites show great potential for their use as emitters in electrically driven light-emitting diodes (LEDs) with external quantum efficiency (EQE) over 25%. While the toxicity of lead and inferior device stability are the main obstacles for their commercialization, replacing Pb²⁺ with low- or non-toxic metal ions to form low- or zero-dimensional structures provides an alternative approach to effectively tackle these issues. Recently, luminescent lead-free metal halides have been increasingly developed toward eco-friendly and highly efficient electroluminescence. In this feature article, we give a brief overview of recent advances in luminescent lead-free metal halides and their applications in electrically driven LEDs. The challenges and prospects in this field are outlined at the end.

Bio-Inspired Pangolin Design for Self-Healable Flexible Perovskite Light-Emitting Diodes

Despite tremendous developments in the luminescene performance of perovskite light-emitting diodes (PeLEDs), the brittle nature of perovskite crystals and their poor crystallinity on flexible substrates inevitably lead to inferior performance. Inspired by pangolins' combination of rigid scales and soft flesh, we propose a bionic structure design for self-healing flexible PeLEDs by employing a polymer-assisted crystal regulation method with a soft elastomer of diphenylmethane diisocyanate polyurethane (MDI-PU). The crystallinity and flexural strain resistance of such perovskite films on plastics with silver-nanowire-based flexible transparent electrodes are highly enhanced. The detrimental cracks induced during repeated deformation can be effectively self-healed under heat treatment via intramolecular/intermolecular hydrogen bonds with MDI-PU. Upon collective optimization of the perovskite films and device architecture, the blue-emitting flexible PeLEDs can achieve a record external quantum efficiency of 13.5% and high resistance to flexural strain, which retain 87.8 and 80.7% of their initial efficiency after repeated bending and twisting operations of 2000 cycles, respectively.

Dopamine Hydrochloride-Assisted Synergistic Modulation of Perovskite Crystallization and Sn2+ Oxidation for Efficient and Stable Lead-free Solar Cells

Tin perovskites have received great concern in solar cell research owing to their favorable optoelectronic performance and environmental friendliness. However, due to their poor crystallization and easy oxidation, the performance improvement for tin-based perovskite solar cells (TPSCs) is rather challenging. Herein, reductive 3-hydroxytyramine hydrochloride (DACl) with NH₂·HCl and phenol groups as co-additives with SnF₂ is added into the precursor to modulate perovskite crystallization and inhibit Sn²⁺ oxidation for high-performance TPSCs. The Lewis base group of NH₂ HCl in DACl could bind to perovskite lattices to modulate the crystallization with suppressed defects in the bulk and grain boundary, whereas reductive phenol groups effectively constrain the Sn²⁺ oxidation. Moreover, the undissociated DACl decreases the supersaturated concentration of tin perovskite solution and creates a pre-nucleation site for rapid nucleation to further regulate crystallization. Consequently, the DACl-derived TPSCs achieve a high power-conversion efficiency (PCE) that reaches up to 11%. More impressively, the device remains at 84% of the initial PCE after full-sun illumination in N₂ over 600 h without being encapsulated. This DACl-based synergistic modulation of a lead-free perovskite demonstrates a feasible approach using one molecule with different functional groups to manipulate crystallization, Sn²⁺ oxidation, and defect reparation of tin perovskite films, providing a critical guideline for constructing high-quality perovskites by multifunctional additives with high photovoltaic performance.

Vapor-Assisted In Situ Recrystallization for Efficient Tin-Based Perovskite Light-Emitting Diodes

Tin-based perovskites are a promising candidates to replace their toxic lead-based counterparts in optoelectronic applications, such as light-emitting diodes (LEDs). However, the development of tin perovskite LEDs is slow due to the challenge of obtaining high-quality tin perovskite films. Here, a vapor-assisted spin-coating method is developed to achieve high-quality tin perovskites and high-efficiency LEDs. It is revealed that solvent vapor can lead to in situ recrystallization of tin perovskites during the film-formation process, thus significantly improving the crystalline quality with reduced defects. An antioxidant additive is further introduced to suppress the oxidation of Sn²⁺ and increase the photoluminescence quantum efficiency up to ≈30%, which is an approximately fourfold enhancement in comparison with that of the control method. As a result, efficient tin perovskite LEDs are achieved with a peak external quantum efficiency of 5.3%, which is among the highest efficiency of lead-free perovskite LEDs.

Strategies to Improve the Stability of Perovskite Light-Emitting Diodes: Progress and Perspective

Perovskite light-emitting diodes (PeLEDs) featuring excellent electroluminescent (EL) characteristics and facile production have been emerging as promising candidates for next-generation high-definition displays. In recent years, tremendous advances have been achieved in the EL efficiency of PeLEDs. However, their poor operational stability impedes practical applications. Particularly, the severe spectral instability of pure-blue and pure-red PeLEDs lags far behind the requirements of commercial displays. In this Perspective, the critical factors related to device degradation are first summarized, including perovskite crystal defects, unbalanced charge injection, Auger recombination, and Joule heating. Then, the recent progress in improving the operational and spectral stabilities is reviewed in categories. Considering the present achievements, we provide potential research directions for further development of stable PeLEDs.

Interface engineering enhanced near-infrared electroluminescence in an n-ZnO microwire/p-GaAs heterojunction

Interface engineering in the fabrication of low-dimensional optoelectronic devices has been highlighted in recent decades to enhance device characteristics such as reducing leakage current, optimizing charge transport, and modulating the energy-band structure. In this paper, we report a dielectric interface approach to realize one-dimensional (1D) wire near-infrared light-emitting devices with high brightness and enhanced emission efficiency. The light-emitting diode is composed of a zinc oxide microwire covered by a silver nanolayer (Ag@ZnO MW), magnesium oxide (MgO) buffer layer, and p-type gallium arsenide (GaAs) substrate. In the device structure, the insertion of a MgO dielectric layer in the n-ZnO MW/p-GaAs heterojunction can be used to modulate the device features, such as changing the charge transport properties, reducing the leakage current and engineering the band alignment. Furthermore, the cladding of the Ag nanolayer on the ZnO MW can optimize the junction interface quality, thus reducing the turn-on voltage and increasing the current injection and electroluminescence (EL) efficiency. The combination of MgO buffer layer and Ag nanolayer cladding can be utilized to achieve modulating the carrier recombination path, interfacial engineering of heterojunction with optimized band alignment and electronic structure in these carefully designed emission devices. Besides, the enhanced near-infrared EL and improved physical contact were also obtained. The study of current transport modulation and energy-band engineering proposes an original and efficient route for improving the device performances of 1D wire-type heterojunction light sources.

Efficient Near-Infrared Luminescence in Lanthanide-Doped Vacancy-Ordered Double Perovskite Cs2 ZrCl6 Phosphors via Te4+ Sensitization

All-inorganic lead-free perovskite-derivative metal halides have shown great promise in optoelectronics, however, it remains challenging to realize efficient near-infrared (NIR) luminescence in these materials. Herein, we report a novel strategy based on Te⁴⁺ /Ln³⁺ (Ln=Er, Nd, and Yb) co-doping to achieve efficient NIR luminescence in vacancy-ordered double perovskite Cs₂ ZrCl₆ phosphors, which are excitable by a low-cost near-ultraviolet light-emitting diode (LED) chip. Through sensitization by the spin-orbital allowed ¹ S₀ →³ P₁ transition of Te⁴⁺ , intense and multi-wavelength NIR luminescence originating from the 4f→4f transitions of Er³⁺ , Nd³⁺ , and Yb³⁺ was acquired, with a quantum yield of 6.1 % for the Er³⁺ emission. These findings provide a general approach to achieve efficient NIR emission in lead-free metal halides through ns² -metal and lanthanide ion co-doping, thereby opening up a new avenue for exploring NIR-emitting perovskite derivatives towards versatile applications such as NIR-LEDs and bioimaging.

Wavelength-Tuneable Near-Infrared Luminescence in Mixed Tin-Lead Halide Perovskites

Near-infrared light-emitting diodes (NIR-LEDs) are widely used in various applications such as night-vision devices, optical communication, biological imaging and optical diagnosis. The current solution-processed high-efficiency perovskite NIR-LEDs are typically based on CsPbI₃ and FAPbI₃ with emission peaks being limited in the range of 700–800 nm. NIR-LEDs with longer emission wavelengths near to 900 nm can be prepared by replacing Pb with Sn. However, Sn-based perovskite LEDs usually exhibit a low efficiency owing to the high concentration of Sn-related defects and the rapid oxidation of Sn²⁺ to Sn⁴⁺, which further induces the device degradation. These problems can be solved by rationally adjusting the ratio between Pb content with Sn. Mixed Sn-Pb halide perovskites with a smaller bandgap and superior stability than pure Sn-based perovskites are promising candidates for manufacturing next-generation NIR emitters. In this study, we systematically investigated the optical properties of a family of hybrid Sn and Pb iodide compounds. The emission spectra of the mixed Sn-Pb halide perovskites were tuned by changing the Sn:Pb ratio. Consequently, the peak emission wavelength red-shifted from 710 nm to longer than 950 nm. The absorption and photoluminescence emission properties associated with different compositions were compared, and the results demonstrated the potential of MA- and FA-based mixed Sn-Pb halide perovskites for preparing low-cost and efficient NIR-LEDs. In addition, we clarified the influence of cations on the bandgap bowing effect and electronic properties of mixed Sn-Pb halide perovskites.

Tin-based halide perovskite materials: properties and applications

Organic–inorganic hybrid halide perovskite materials have attracted considerable research interest, especially for photovoltaics. In addition, their scope has been extended towards light-emitting devices, photodetectors, or detectors. However, the toxicity of lead (Pb) element in perovskite compositions limits their applications. Therefore, a tremendous research effort on replacing is underway. More specifically, tin-based perovskites have shown the highest potential for this purpose. However, many challenges remain before these materials reach the goals of stability, safety, and eventually commercial application. This perspective considers many aspects and the critical development possibilities of tin-based perovskites, including drawbacks and challenges based on their physical properties. Additionally, it provides insights for future device applications that go beyond solar cells. Finally, the existing challenges and opportunities in tin-based perovskites are discussed.

This perspective presents the current status and prospects of tin-perovskites and the relevant optoelectronic device applications.

Research progress of ABX3-type lead-free perovskites for optoelectronic applications: materials and devices

We summarize the development and application of ABX3-type lead-free halide perovskite materials, especially in optoelectronic devices.