1
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Choi YK, Kim TH, Jung BK, Park T, Lee YM, Oh S, Choi HJ, Park J, Bae SI, Lee Y, Shim JW, Park HY, Oh SJ. High-Performance Self-Powered Quantum Dot Infrared Photodetector with Azide Ion Solution Treated Electron Transport Layer. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2308375. [PMID: 38073328 DOI: 10.1002/smll.202308375] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2023] [Revised: 11/15/2023] [Indexed: 05/03/2024]
Abstract
The demand for self-powered photodetectors (PDs) capable of NIR detection without external power is growing with the advancement of NIR technologies such as LIDAR and object recognition. Lead sulfide quantum dot-based photodetectors (PbS QPDs) excel in NIR detection; however, their self-powered operation is hindered by carrier traps induced by surface defects and unfavorable band alignment in the zinc oxide nanoparticle (ZnO NP) electron-transport layer (ETL). In this study, an effective azide-ion (N3 -) treatment is introduced on a ZnO NP ETL to reduce the number of traps and improve the band alignment in a PbS QPD. The ZnO NP ETL treated with azide ions exhibited notable improvements in carrier lifetime and mobility as well as an enhanced internal electric field within the thin-film heterojunction of the ZnO NPs and PbS QDs. The azide-ion-treated PbS QPD demonstrated a increase in short-circuit current density upon NIR illumination, marking a responsivity of 0.45 A W-1, specific detectivity of 4 × 1011 Jones at 950 nm, response time of 8.2 µs, and linear dynamic range of 112 dB.
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Affiliation(s)
- Young Kyun Choi
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Tae Hyuk Kim
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Byung Ku Jung
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Taesung Park
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Yong Min Lee
- Department of Semiconductor Systems Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Seongkeun Oh
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Hyung Jin Choi
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Junhyeok Park
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Sang-In Bae
- Samsung Electronics Co. Ltd, Yongin-si, 17113, Republic of Korea
| | - YunKi Lee
- Samsung Electronics Co. Ltd, Yongin-si, 17113, Republic of Korea
| | - Jae Won Shim
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Hye Yeon Park
- Samsung Electronics Co. Ltd, Yongin-si, 17113, Republic of Korea
| | - Soong Ju Oh
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
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2
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Parmar DH, Rehl B, Atan O, Hoogland S, Sargent EH. Transient Measurements and Simulations Correlate Exchange Ligand Concentration and Trap States in Colloidal Quantum Dot Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59931-59938. [PMID: 38085700 DOI: 10.1021/acsami.3c14611] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Colloidal quantum dot (CQD) photodetectors (PDs) can detect wavelengths longer than the 1100 nm limit of silicon because of their highly tunable bandgaps. CQD PDs are acutely affected by the ligands that separate adjacent dots in a CQD-solid. Optimizing the exchange solution ligand concentration in the processing steps is crucial to achieving high photodetector performance. However, the complex mix of chemistry and optoelectronics involved in CQD PDs means that the effects of the exchange solution ligand concentration on device physics are poorly understood. Here we report direct correspondence between simulated and experimental transient photocurrent responses in CQD PDs. For both deficient and excess conditions, our model demonstrated the experimental changes to the transient photocurrent aligned with changes in trap state density. Combining transient photoluminescence, absorption, and photocurrent with this simulation model, we revealed that different mechanisms are responsible for the increased trap density induced by excess and deficient active layer ligand concentrations.
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Affiliation(s)
- Darshan H Parmar
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
| | - Benjamin Rehl
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
| | - Ozan Atan
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
| | - Sjoerd Hoogland
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
| | - Edward H Sargent
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
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3
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Pang C, Deng YH, Kheradmand E, Poonkottil N, Petit R, Elsinger L, Detavernier C, Geiregat P, Hens Z, Van Thourhout D. Integrated PbS Colloidal Quantum Dot Photodiodes on Silicon Nitride Waveguides. ACS PHOTONICS 2023; 10:4215-4224. [PMID: 38145169 PMCID: PMC10741659 DOI: 10.1021/acsphotonics.3c00945] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/07/2023] [Indexed: 12/26/2023]
Abstract
Colloidal quantum dots (QDs) have become a versatile optoelectronic material for emitting and detecting light that can overcome the limitations of a range of electronic and photonic technology platforms. Photonic integrated circuits (PICs), for example, face the persistent challenge of combining active materials with passive circuitry ideally suited for guiding light. Here, we demonstrate the integration of photodiodes (PDs) based on PbS QDs on silicon nitride waveguides (WG). Analyzing planar QDPDs first, we argue that the main limitation WG-coupled QDPDs face is detector saturation induced by the high optical power density of the guided light. Using the cladding thickness and waveguide width as design parameters, we mitigate this issue, and we demonstrate WG-QDPDs with an external quantum efficiency of 67.5% at 1275 nm that exhibit a linear photoresponse for input powers up to 400 nW. In the next step, we demonstrate a compact infrared spectrometer by integrating these WG-QDPDs on the output channels of an arrayed waveguide grating demultiplexer. This work provides a path toward a low-cost PD solution for PICs, which are attractive for large-scale production.
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Affiliation(s)
- Chao Pang
- Photonics
Research Group, Ghent University - imec, 9052 Ghent, Belgium
- NB
Photonics, Ghent University, 9052 Ghent, Belgium
| | - Yu-Hao Deng
- NB
Photonics, Ghent University, 9052 Ghent, Belgium
- Physics
and Chemistry of Nanostructures Group, Ghent
University, 9000 Ghent, Belgium
| | - Ezat Kheradmand
- NB
Photonics, Ghent University, 9052 Ghent, Belgium
- Physics
and Chemistry of Nanostructures Group, Ghent
University, 9000 Ghent, Belgium
| | - Nithin Poonkottil
- NB
Photonics, Ghent University, 9052 Ghent, Belgium
- Conformal
Coating of Nanomaterials Group, Ghent University, 9000 Ghent, Belgium
| | - Robin Petit
- NB
Photonics, Ghent University, 9052 Ghent, Belgium
- Conformal
Coating of Nanomaterials Group, Ghent University, 9000 Ghent, Belgium
| | - Lukas Elsinger
- Photonics
Research Group, Ghent University - imec, 9052 Ghent, Belgium
- NB
Photonics, Ghent University, 9052 Ghent, Belgium
| | - Christophe Detavernier
- NB
Photonics, Ghent University, 9052 Ghent, Belgium
- Conformal
Coating of Nanomaterials Group, Ghent University, 9000 Ghent, Belgium
| | - Pieter Geiregat
- NB
Photonics, Ghent University, 9052 Ghent, Belgium
- Physics
and Chemistry of Nanostructures Group, Ghent
University, 9000 Ghent, Belgium
| | - Zeger Hens
- NB
Photonics, Ghent University, 9052 Ghent, Belgium
- Physics
and Chemistry of Nanostructures Group, Ghent
University, 9000 Ghent, Belgium
| | - Dries Van Thourhout
- Photonics
Research Group, Ghent University - imec, 9052 Ghent, Belgium
- NB
Photonics, Ghent University, 9052 Ghent, Belgium
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4
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He S, Tang X, Deng Y, Yin N, Jin W, Lu X, Chen D, Wang C, Sun T, Chen Q, Jin Y. Anomalous efficiency elevation of quantum-dot light-emitting diodes induced by operational degradation. Nat Commun 2023; 14:7785. [PMID: 38012136 PMCID: PMC10682488 DOI: 10.1038/s41467-023-43340-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/19/2023] [Accepted: 11/08/2023] [Indexed: 11/29/2023] Open
Abstract
Quantum-dot light-emitting diodes promise a new generation of high-performance and solution-processed electroluminescent light sources. Understanding the operational degradation mechanisms of quantum-dot light-emitting diodes is crucial for their practical applications. Here, we show that quantum-dot light-emitting diodes may exhibit an anomalous degradation pattern characterized by a continuous increase in electroluminescent efficiency upon electrical stressing, which deviates from the typical decrease in electroluminescent efficiency observed in other light-emitting diodes. Various in-situ/operando characterizations were performed to investigate the evolutions of charge dynamics during the efficiency elevation, and the alterations in electric potential landscapes in the active devices. Furthermore, we carried out selective peel-off-and-rebuild experiments and depth-profiling analyses to pinpoint the critical degradation site and reveal the underlying microscopic mechanism. The results indicate that the operation-induced efficiency increase results from the degradation of electron-injection capability at the electron-transport layer/cathode interface, which in turn leads to gradually improved charge balance. Our work provides new insights into the degradation of red quantum-dot light-emitting diodes and has far-reaching implications for the design of charge-injection interfaces in solution-processed light-emitting diodes.
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Affiliation(s)
- Siyu He
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou, China
| | - Xiaoqi Tang
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou, China
| | - Yunzhou Deng
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Hangzhou, China.
- Cavendish Laboratory, University of Cambridge, Cambridge, UK.
| | - Ni Yin
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Wangxiao Jin
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou, China
| | - Xiuyuan Lu
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou, China
| | - Desui Chen
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou, China
| | - Chenyang Wang
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou, China
| | - Tulai Sun
- Center for Electron Microscopy, State Key Laboratory Breeding Base of Green Chemistry Synthesis Technology and College of Chemical Engineering, Zhejiang University of Technology, Hangzhou, China
| | - Qi Chen
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China.
| | - Yizheng Jin
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou, China.
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5
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Lee J, Kim B, Kim C, Lee MH, Kozakci I, Cho S, Kim B, Lee SY, Kim J, Oh J, Lee JY. Unlocking the Potential of Colloidal Quantum Dot/Organic Hybrid Solar Cells: Band Tunable Interfacial Layer Approach. ACS APPLIED MATERIALS & INTERFACES 2023; 15:39408-39416. [PMID: 37555937 DOI: 10.1021/acsami.3c08419] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/10/2023]
Abstract
Hybrid colloidal quantum dot (CQD)/organic architectures are promising candidates for emerging optoelectronic devices having high performance and inexpensive fabrication. For unlocking the potential of CQD/organic hybrid devices, enhancing charge extraction properties at electron transport layer (ETL)/CQD interfaces is crucial. Hence, we carefully adjust the interface properties between the ETL and CQD layer by incorporating an interfacial layer for the ETL (EIL) using several types of cinnamic acid ligands. The EIL having a cascading band offset (ΔEC) between the ETL and CQD layer suppresses the potential barrier and the local charge accumulation at ETL/CQD interfaces, thereby reducing the bimolecular recombination. An optimal EIL effectively expands the depletion region that facilitates charge extraction between the ETL and CQD layer while preventing the formation of shallow traps. Representative devices with an EIL exhibit a maximum power conversion efficiency of 14.01% and retain over 80% of initial performances after 300 h under continuous maximum power point operation.
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Affiliation(s)
- Jihyung Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Byeongsu Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Changjo Kim
- Information and Electronics Research Institute, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Min-Ho Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Irem Kozakci
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Sungjun Cho
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Beomil Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Sang Yeon Lee
- Information and Electronics Research Institute, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Junho Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jihun Oh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jung-Yong Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
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6
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Liang X, Liu Y, Liu P, Yang J, Liu J, Yang Y, Wang B, Hu J, Zhang L, Yang G, Lu S, Liang G, Lan X, Zhang J, Gao L, Tang J. Large-area flexible colloidal-quantum-dot infrared photodiodes for photoplethysmogram signal measurements. Sci Bull (Beijing) 2023; 68:698-705. [PMID: 36931915 DOI: 10.1016/j.scib.2023.03.016] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/25/2022] [Revised: 01/07/2023] [Accepted: 02/27/2023] [Indexed: 03/17/2023]
Abstract
Epitaxially grown photodiodes are the foundation of infrared photodetection technology; however, their rigid structure and limited area scaling limit their use in advanced applications. Colloidal-quantum-dot (CQD) infrared photodiodes have increased active areas through solution processing, and are thus potential candidates for large-area flexible photodetection, but these large-area photodiodes have disadvantages such as large dark current density, poor homogeneity, and poor stability. Therefore, this study established a fabrication strategy for large-area flexible CQD photodiodes that involves introducing polyimide to CQD ink to improve CQD passivation, monodisperse ink persistence, and film morphology. The resulting CQD photodiodes exhibited reduced dark current density and improved homogeneity and work stability. Furthermore, the as-prepared photodiodes exhibited a detectivity (D*) of greater than 1013 Jones, which was higher than other reported CQD photodetectors. The CQD photodiodes developed in this study can be used for wearable photoplethysmogram (PPG) signal measurement under ambient light at reduced cost and power consumption..
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Affiliation(s)
- Xinyi Liang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Yuxuan Liu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Peilin Liu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Junrui Yang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Jing Liu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Yang Yang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Bo Wang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Jun Hu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Linxiang Zhang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Gaoyuan Yang
- Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, Hubei University of Arts and Science, Xiangyang 441053, China
| | - Shuaicheng Lu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China; Optics Valley Laboratory, Wuhan 430074, China; Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou 325006, China
| | - Guijie Liang
- Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, Hubei University of Arts and Science, Xiangyang 441053, China
| | - Xinzheng Lan
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China; Optics Valley Laboratory, Wuhan 430074, China
| | - Jianbing Zhang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China; Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou 325006, China; Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen 518000, China.
| | - Liang Gao
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China; Optics Valley Laboratory, Wuhan 430074, China; Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou 325006, China.
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China; Optics Valley Laboratory, Wuhan 430074, China
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7
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Lu S, Liu P, Yang J, Liu S, Yang Y, Chen L, Liu J, Liu Y, Wang B, Lan X, Zhang J, Gao L, Tang J. High-Performance Colloidal Quantum Dot Photodiodes via Suppressing Interface Defects. ACS APPLIED MATERIALS & INTERFACES 2023; 15:12061-12069. [PMID: 36848237 DOI: 10.1021/acsami.2c22774] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
PbS colloidal quantum dot (CQD) infrared photodiodes have attracted wide attention due to the prospect of developing cost-effective infrared imaging technology. Presently, ZnO films are widely used as the electron transport layer (ETL) of PbS CQDs infrared photodiodes. However, ZnO-based devices still suffer from the problems of large dark current and low repeatability, which are caused by the low crystallinity and sensitive surface of ZnO films. Here, we effectively optimized the device performance of PbS CQDs infrared photodiode via diminishing the influence of adsorbed H2O at the ZnO/PbS CQDs interface. The polar (002) ZnO crystal plane showed much higher adsorption energy of H2O molecules compared with other nonpolar planes, which could reduce the interface defects induced by detrimentally adsorbed H2O. Based on the sputtering method, we obtained the [002]-oriented and high-crystallinity ZnO ETL and effectively suppressed the adsorption of detrimental H2O molecules. The prepared PbS CQDs infrared photodiode with the sputtered ZnO ETL demonstrated lower dark current density, higher external quantum efficiency, and faster photoresponse compared with the sol-gel ZnO device. Simulation results further unveiled the relationship between interface defects and device dark current. Finally, a high-performance sputtered ZnO/PbS CQDs device was obtained with a specific detectivity of 2.15 × 1012 Jones at -3 dB bandwidth (94.6 kHz).
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Affiliation(s)
- Shuaicheng Lu
- Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, China
- Optics Valley Laboratory, 1037 Luoyu Road, Wuhan, Hubei 430074, China
- Wenzhou Advanced Manufacturing Technology Research Institute, Huazhong University of Science and Technology (HUST), Wenzhou, Zhejiang 325035, China
| | - Peilin Liu
- Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, China
| | - Junrui Yang
- Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, China
| | - Shijie Liu
- Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, China
| | - Yang Yang
- Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, China
| | - Long Chen
- Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, China
| | - Jing Liu
- Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, China
- Optics Valley Laboratory, 1037 Luoyu Road, Wuhan, Hubei 430074, China
| | - Yuxuan Liu
- Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, China
| | - Bo Wang
- Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, China
| | - Xinzheng Lan
- Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, China
- Optics Valley Laboratory, 1037 Luoyu Road, Wuhan, Hubei 430074, China
| | - Jianbing Zhang
- Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, China
- Optics Valley Laboratory, 1037 Luoyu Road, Wuhan, Hubei 430074, China
- Wenzhou Advanced Manufacturing Technology Research Institute, Huazhong University of Science and Technology (HUST), Wenzhou, Zhejiang 325035, China
| | - Liang Gao
- Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, China
- Optics Valley Laboratory, 1037 Luoyu Road, Wuhan, Hubei 430074, China
- Wenzhou Advanced Manufacturing Technology Research Institute, Huazhong University of Science and Technology (HUST), Wenzhou, Zhejiang 325035, China
| | - Jiang Tang
- Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, China
- Optics Valley Laboratory, 1037 Luoyu Road, Wuhan, Hubei 430074, China
- Wenzhou Advanced Manufacturing Technology Research Institute, Huazhong University of Science and Technology (HUST), Wenzhou, Zhejiang 325035, China
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8
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van Embden J, Gross S, Kittilstved KR, Della Gaspera E. Colloidal Approaches to Zinc Oxide Nanocrystals. Chem Rev 2023; 123:271-326. [PMID: 36563316 DOI: 10.1021/acs.chemrev.2c00456] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
Zinc oxide is an extensively studied semiconductor with a wide band gap in the near-UV. Its many interesting properties have found use in optics, electronics, catalysis, sensing, as well as biomedicine and microbiology. In the nanoscale regime the functional properties of ZnO can be precisely tuned by manipulating its size, shape, chemical composition (doping), and surface states. In this review, we focus on the colloidal synthesis of ZnO nanocrystals (NCs) and provide a critical analysis of the synthetic methods currently available for preparing ZnO colloids. First, we outline key thermodynamic considerations for the nucleation and growth of colloidal nanoparticles, including an analysis of different reaction methodologies and of the role of dopant ions on nanoparticle formation. We then comprehensively review and discuss the literature on ZnO NC systems, including reactions in polar solvents that traditionally occur at low temperatures upon addition of a base, and high temperature reactions in organic, nonpolar solvents. A specific section is dedicated to doped NCs, highlighting both synthetic aspects and structure-property relationships. The versatility of these methods to achieve morphological and compositional control in ZnO is explicated. We then showcase some of the key applications of ZnO NCs, both as suspended colloids and as deposited coatings on supporting substrates. Finally, a critical analysis of the current state of the art for ZnO colloidal NCs is presented along with existing challenges and future directions for the field.
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Affiliation(s)
- Joel van Embden
- School of Science, RMIT University, MelbourneVictoria, 3001, Australia
| | - Silvia Gross
- Dipartimento di Scienze Chimiche, Università degli Studi di Padova, 35131Padova, Italy.,Karlsruher Institut für Technologie (KIT), Institut für Technische Chemie und Polymerchemie (ITCP), Engesserstrasse 20, 76131Karlsruhe, Germany
| | - Kevin R Kittilstved
- Department of Chemistry, University of Massachusetts Amherst, Amherst, Massachusetts01003, United States
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9
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Liu J, Wang J, Xian K, Zhao W, Zhou Z, Li S, Ye L. Organic and quantum dot hybrid photodetectors: towards full-band and fast detection. Chem Commun (Camb) 2023; 59:260-269. [PMID: 36510729 DOI: 10.1039/d2cc05281d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
Abstract
Photodetectors hold great application potential in many fields such as image sensing, night vision, infrared communication and health monitoring. To date, commercial photodetectors mainly rely on inorganic semiconductors, e.g., monocrystalline silicon, germanium, and indium selenide/gallium with complex and costly fabrication, which are hardly compatible with wearable electronics. In contrast, organic conjugated materials provide great superiority in flexibility and stretchability. In this Highlight, the unique properties of organic and quantum dot photodetectors were firstly discussed to reveal the great complementarity of the two technologies. Subsequently, the recent advance of organic/quantum dot hybrid photodetectors was outlined to highlight their great potential in developing broadband and high-performance photodetectors. Moreover, the multiple functions (e.g., dual-band detection and upconversion detection) of hybrid photodetectors were highlighted for their promising application in image sensing and infrared detection. Lastly, we present a forword-looking discussion on the challenges and our insights for the further advancement of hybrid photodetectors. This work may spark enormous research attention in organic/quantum dot electronics and advance the commercial applications.
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Affiliation(s)
- Junwei Liu
- School of Materials Science and Engineering, School of Environmental Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300350, China. .,State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China.
| | - Jingjing Wang
- School of Materials Science and Engineering, School of Environmental Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300350, China.
| | - Kaihu Xian
- School of Materials Science and Engineering, School of Environmental Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300350, China.
| | - Wenchao Zhao
- Co-Innovation Center of Efficient Processing and Utilization of Forest Resources, College of Materials Science and Engineering, Nanjing Forestry University, Nanjing 210037, China
| | - Zhihua Zhou
- School of Materials Science and Engineering, School of Environmental Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300350, China.
| | - Shaojuan Li
- State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China.
| | - Long Ye
- School of Materials Science and Engineering, School of Environmental Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300350, China. .,State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China.
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Zhang Y, Vafaie M, Xu J, Pina JM, Xia P, Najarian AM, Atan O, Imran M, Xie K, Hoogland S, Sargent EH. Electron-Transport Layers Employing Strongly Bound Ligands Enhance Stability in Colloidal Quantum Dot Infrared Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2206884. [PMID: 36134538 DOI: 10.1002/adma.202206884] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2022] [Revised: 09/04/2022] [Indexed: 06/16/2023]
Abstract
Solution-processed photodetectors based on colloidal quantum dots (CQDs) are promising candidates for short-wavelength infrared light sensing applications. Present-day CQD photodetectors employ a CQD active layer sandwiched between carrier-transport layers in which the electron-transport layer (ETL) is composed of metal oxides. Herein, a new class of ETLs is developed using n-type CQDs, finding that these benefit from quantum-size effect tuning of the band energies, as well as from surface ligand engineering. Photodetectors operating at 1450 nm are demonstrated using CQDs with tailored functionalities for each of the transport layers and the active layer. By optimizing the band alignment between the ETL and the active layer, CQD photodetectors that combine a low dark current of ≈1 × 10-3 mA cm-2 with a high external quantum efficiency of ≈66% at 1 V are reported, outperforming prior reports of CQD photodetectors operating at >1400 nm that rely on metal oxides as ETLs. It is shown that stable CQD photodetectors rely on well-passivated CQDs: for ETL CQDs, a strongly bound organic ligand trans-4-(trifluoromethyl)cinnamic acid (TFCA) provides improved passivation compared to the weakly bound inorganic ligand tetrabutylammonium iodide (TBAI). TFCA suppresses bias-induced ion migration inside the ETL and improves the operating stability of photodetectors by 50× compared to TBAI.
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Affiliation(s)
- Yangning Zhang
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Maral Vafaie
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Jian Xu
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Joao M Pina
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Pan Xia
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Amin M Najarian
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Ozan Atan
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Muhammad Imran
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Ke Xie
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Sjoerd Hoogland
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
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