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Chen Y, Zheng Y, Wang J, Zhao X, Liu G, Lin Y, Yang Y, Wang L, Tang Z, Wang Y, Fang Y, Zhang W, Zhu X. Ultranarrow-bandgap small-molecule acceptor enables sensitive SWIR detection and dynamic upconversion imaging. SCIENCE ADVANCES 2024; 10:eadm9631. [PMID: 38838154 DOI: 10.1126/sciadv.adm9631] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2023] [Accepted: 05/02/2024] [Indexed: 06/07/2024]
Abstract
Short-wavelength infrared (SWIR) light detection plays a key role in modern technologies. Emerging solution-processed organic semiconductors are promising for cost-effective, flexible, and large-area SWIR organic photodiodes (OPDs). However, the spectral responsivity (R) and specific detectivity (D*) of SWIR OPDs are restricted by insufficient exciton dissociation and high noise current. In this work, we synthesized an SWIR small molecule with a spectral coverage of 0.3 to 1.3 micrometers peaking at 1100 nanometers. The photodiode, with optimized exciton dissociation, charge injection, and SWIR transmittance, achieves a record high R of 0.53 ampere per watt and D* of 1.71 × 1013 Jones at 1110 nanometers under zero bias. The D* at 1 to 1.2 micrometers surpasses that of the uncooled commercial InGaAs photodiode. Furthermore, large-area semitransparent all-organic upconversion devices integrating the SWIR photodiode realized static and dynamic SWIR-to-visible imaging, along with excellent upconversion efficiency and spatial resolution. This work provides alternative insights for developing sensitive organic SWIR detection.
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Affiliation(s)
- Yongjie Chen
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Haidian District, Beijing, China
| | - Yingqi Zheng
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Haidian District, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Haidian District, Beijing, China
| | - Jing Wang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Xuan Zhao
- Department of Physics and Applied Optics Beijing Area Major Laboratory, Center for Advanced Quantum Studies, Beijing Normal University, Beijing, China
| | - Guanhao Liu
- School of Chemical Sciences, University of Chinese Academy of Sciences, Haidian District, Beijing, China
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials and CityU-CAS Joint Laboratory of Functional Materials and Devices, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, China
| | - Yi Lin
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Center for Advanced Low-dimension Materials, College of Materials Science and Engineering, Donghua University, Shanghai, China
| | - Yubo Yang
- Department of Physics and Applied Optics Beijing Area Major Laboratory, Center for Advanced Quantum Studies, Beijing Normal University, Beijing, China
| | - Lixiang Wang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Zheng Tang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Center for Advanced Low-dimension Materials, College of Materials Science and Engineering, Donghua University, Shanghai, China
| | - Ying Wang
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials and CityU-CAS Joint Laboratory of Functional Materials and Devices, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, China
| | - Yanjun Fang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Wenkai Zhang
- Department of Physics and Applied Optics Beijing Area Major Laboratory, Center for Advanced Quantum Studies, Beijing Normal University, Beijing, China
| | - Xiaozhang Zhu
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Haidian District, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Haidian District, Beijing, China
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2
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Yin D, Gao Z, Xu C, Lyu P, Sun L. Modulating luminescence through anion variation in lead-free Cs 2NaInX 6 (X = Cl, Br, and I) perovskites: a first-principles study. NANOSCALE 2024; 16:10340-10349. [PMID: 38738992 DOI: 10.1039/d3nr06373a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2024]
Abstract
The A2B+B'3+X6-type lead-free halide perovskite Cs2NaInCl6 has demonstrated limited luminescence performance attributed to parity-forbidden transitions in its intrinsic form. While extensive exploration has been dedicated to partial cation substitution in Cs2NaInCl6, there is a noticeable gap in understanding the impact of anion composition on this material. In this study, we investigated the influence of anion composition on the luminescence performance of Cs2NaInX6 using first-principles calculations. We first conducted calculations on Cs2NaInX6 in its intrinsic state and on Cs2NaInCl6 with cation substitution to establish the reliability of the transition dipole moment (TDM) as a luminescence descriptor in this system. Following this, we systematically assessed the formation energies, octahedral distortions, and luminescence properties of Cs2NaInX6 with diverse anion compositions. Despite sharing similar stability, closely aligned with the experimentally accessible Cs2NaInCl6, all mixed halide structures exhibited significant octahedral distortions. Additionally, most of these structures displayed considerably enhanced TDM compared to their single halide counterparts. Notably, the structures Cs2NaInX4X'2-b and Cs2NaInX3X'3-b demonstrated superior luminescence performance compared to other structures. The absorption spectra calculated for selected structures revealed the enhancement of their photo-absorbance in the presence of iodine, particularly in the low energy region. This observation provides additional evidence that light absorbance in different energy regions can be effectively regulated in this way. Finally, we also investigated other optical properties that impact luminescence performances, such as the energy loss spectrum L(ω), the reflectivity spectrum R(ω) and the refractivity index n(ω). The findings offer insights into optimizing the luminescence performance of lead-free halide perovskites through anion composition variation.
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Affiliation(s)
- Desheng Yin
- Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, People's Republic of China.
| | - Zhenren Gao
- Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, People's Republic of China.
- Hunan Provincial Key Laboratory of Micro-Nano Energy Materials and Application Technologies, College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421002, People's Republic of China
| | - Changfu Xu
- Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, People's Republic of China.
| | - Pengbo Lyu
- Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, People's Republic of China.
| | - Lizhong Sun
- Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, People's Republic of China.
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3
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Lin T, Hai Y, Luo Y, Feng L, Jia T, Wu J, Ma R, Dela Peña TA, Li Y, Xing Z, Li M, Wang M, Xiao B, Wong KS, Liu S, Li G. Isomerization of Benzothiadiazole Yields a Promising Polymer Donor and Organic Solar Cells with Efficiency of 19.0. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312311. [PMID: 38305577 DOI: 10.1002/adma.202312311] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2023] [Revised: 01/21/2024] [Indexed: 02/03/2024]
Abstract
The exploration of high-performance and low-cost wide-bandgap polymer donors remains critical to achieve high-efficiency nonfullerene organic solar cells (OSCs) beyond current thresholds. Herein, the 1,2,3-benzothiadiazole (iBT), which is an isomer of 2,1,3-benzothiadiazole (BT), is used to design wide-bandgap polymer donor PiBT. The PiBT-based solar cells reach efficiency of 19.0%, which is one of the highest efficiencies in binary OSCs. Systemic studies show that isomerization of BT to iBT can finely regulate the polymers' photoelectric properties including i) increasing the extinction coefficient and photon harvest, ii) downshifting the highest occupied molecular orbital energy levels, iii) improving the coplanarity of polymer backbones, iv) offering good thermodynamic miscibility with acceptors. Consequently, the PiBT:Y6 bulk heterojunction (BHJ) device simultaneously reaches advantageous nanoscale morphology, efficient exciton generation and dissociation, fast charge transportation, and suppressed charge recombination, leading to larger VOC of 0.87 V, higher JSC of 28.2 mA cm-2, greater fill factor of 77.3%, and thus higher efficiency of 19.0%, while the analog-PBT-based OSCs reach efficiency of only 12.9%. Moreover, the key intermediate iBT can be easily afforded from industry chemicals via two-step procedure. Overall, this contribution highlights that iBT is a promising motif for designing high-performance polymer donors.
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Affiliation(s)
- Tao Lin
- School of Optoelectronic Engineering, School of Mechanical Engineering, Guangdong Polytechnic Normal University, Guangzhou, 510665, China
| | - Yulong Hai
- Advanced Materials Thrust, Function Hub, The Hong Kong University of Science and Technology, Nansha, Guangzhou, 511400, China
| | - Yongmin Luo
- Advanced Materials Thrust, Function Hub, The Hong Kong University of Science and Technology, Nansha, Guangzhou, 511400, China
| | - Lingwei Feng
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Tao Jia
- School of Optoelectronic Engineering, School of Mechanical Engineering, Guangdong Polytechnic Normal University, Guangzhou, 510665, China
| | - Jiaying Wu
- Advanced Materials Thrust, Function Hub, The Hong Kong University of Science and Technology, Nansha, Guangzhou, 511400, China
| | - Ruijie Ma
- Department of Electrical and Electronic Engineering, Research Institute for Smart Energy (RISE), Photonic Research Institute (PRI), The Hong Kong Polytechnic University, Hong Kong, 999077, China
| | - Top Archie Dela Peña
- Advanced Materials Thrust, Function Hub, The Hong Kong University of Science and Technology, Nansha, Guangzhou, 511400, China
- Faculty of Science, Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, P. R. China
| | - Yao Li
- Advanced Materials Thrust, Function Hub, The Hong Kong University of Science and Technology, Nansha, Guangzhou, 511400, China
| | - Zengshan Xing
- School of Science, Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, 999077, P. R. China
| | - Mingjie Li
- Faculty of Science, Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, P. R. China
| | - Min Wang
- School of Optoelectronic Engineering, School of Mechanical Engineering, Guangdong Polytechnic Normal University, Guangzhou, 510665, China
| | - Biao Xiao
- Key Laboratory of Optoelectronic Chemical Materials and Devices (Ministry of Education), Flexible Display Materials and Technology Co-Innovation Centre of Hubei Province, School of Optoelectronic Materials & Technology, Jianghan University (JHUN), Wuhan, 430056, China
| | - Kam Sing Wong
- School of Science, Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, 999077, P. R. China
| | - Shengjian Liu
- School of Chemistry, Guangzhou Key Laboratory of Materials for Energy Conversion and Storage, Key Laboratory of Electronic Chemicals for Integrated Circuit Packaging, South China Normal University (SCNU), Guangzhou, 510006, China
| | - Gang Li
- Department of Electrical and Electronic Engineering, Research Institute for Smart Energy (RISE), Photonic Research Institute (PRI), The Hong Kong Polytechnic University, Hong Kong, 999077, China
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Zhang H, Mao R, Yuan L, Wang Y, Liu W, Wang J, Tai H, Jiang Y. Near-Infrared Organic Photodetectors with Spectral Response over 1200 nm Adopting a Thieno[3,4- c]thiadiazole-Based Acceptor. ACS APPLIED MATERIALS & INTERFACES 2024; 16:9088-9097. [PMID: 38319245 DOI: 10.1021/acsami.3c15902] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
The nonclassical ten-pi-electron 5,5-fused thieno[3,4-c]thiadiazole (TTD) unit is an excellent building block for constructing sub-silicon-band gap organic semiconductors. However, no small molecule acceptor (SMA) materials based on TTD have been reported despite the fact that high-sensitivity near-infrared organic photodetectors (OPDs) are generally achieved by using SMAs. In this work, we report a TTD-based narrow band gap (0.95 eV) SMA material TTD(DTC-2FIC)2 with strong near-infrared absorption. Employing PTB7-Th as a donor, OPDs based on TTD(DTC-2FIC)2 exhibit an optimized responsivity of 0.095 (±0.007) A W-1 at 1100 nm and sustain a decent responsivity of 0.074 (±0.008) A W-1 at 1200 nm. Moreover, a good specific detectivity over 1 × 1011 Jones is achieved at a wavelength of 1200 nm. Detailed characterizations imply that the performance of TTD(DTC-2FIC)2-based OPDs may be substantially improved by choosing lower-mixing donors with shallower energy levels. This work demonstrates that SMAs incorporating TTD as the core unit hold promise for constructing high-sensitivity sub-silicon-band gap OPDs.
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Affiliation(s)
- Hanwen Zhang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
| | - Rui Mao
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
| | - Liu Yuan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
| | - Wei Liu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
| | - Jiaqi Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
| | - Huiling Tai
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
| | - Yadong Jiang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
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Ha JW, Lee AY, Eun HJ, Kim JH, Ahn H, Park S, Lee C, Seo DW, Heo J, Yoon SC, Ko SJ, Kim JH. High Detectivity Near Infrared Organic Photodetectors Using an Asymmetric Non-Fullerene Acceptor for Optimal Nanomorphology and Suppressed Dark Current. ACS NANO 2023; 17:18792-18804. [PMID: 37781927 DOI: 10.1021/acsnano.3c03171] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/03/2023]
Abstract
Recently, the development of non-fullerene acceptors (NFAs) for near-infrared (NIR) organic photodetectors (OPDs) has attracted great interest due to their excellent NIR light absorption properties. Herein, we developed NFAs by substituting an electron-donating moiety (branched alkoxy thiophene (BAT)) asymmetrically (YOR1) and symmetrically (YOR2) for the Y6 framework. YOR1 exhibited nanoscale phase separation in a film blended with PTB7-Th. Moreover, substituting the BAT unit effectively extended the absorption wavelengths of YOR1 over 1000 nm by efficient intramolecular charge transfer and extension of the conjugation length. Consequently, YOR1-OPD exhibited significantly reduced dark current and improved responsivity by simultaneously satisfying optimal nanomorphology and significant suppression of charge recombination, resulting in 1.98 × 1013 and 3.38 × 1012 Jones specific detectivity at 950 and 1000 nm, respectively. Moreover, we successfully demonstrated the application of YOR1-OPD in highly sensitive photoplethysmography sensors using NIR light. This study suggests a strategic approach for boosting the overall performance of NIR OPDs targeting a 1000 nm light signal using an all-in-one (optimal morphology, suppressed dark current, and extended NIR absorption wavelength) NFA.
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Affiliation(s)
- Jong-Woon Ha
- Energy Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Ah Young Lee
- Department of Molecular Science and Technology, Ajou University, Suwon, 16499, Republic of Korea
| | - Hyeong Ju Eun
- Department of Molecular Science and Technology, Ajou University, Suwon, 16499, Republic of Korea
| | - Jae-Hyun Kim
- Department of Electrical and Computer Engineering, Ajou University, Suwon, 16499, Republic of Korea
| | - Hyungju Ahn
- Pohang Accelerator Laboratory, Pohang 37673, Republic of Korea
| | - Sungjun Park
- Department of Electrical and Computer Engineering, Ajou University, Suwon, 16499, Republic of Korea
| | - Changjin Lee
- Energy Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Deok Won Seo
- Department of Electrical and Computer Engineering, Ajou University, Suwon, 16499, Republic of Korea
| | - Junseok Heo
- Department of Electrical and Computer Engineering, Ajou University, Suwon, 16499, Republic of Korea
| | - Sung Cheol Yoon
- Energy Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Seo-Jin Ko
- Energy Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Jong H Kim
- Department of Molecular Science and Technology, Ajou University, Suwon, 16499, Republic of Korea
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Ng W, Xu X, Attwood M, Wu H, Meng Z, Chen X, Oxborrow M. Move Aside Pentacene: Diazapentacene-Doped para-Terphenyl, a Zero-Field Room-Temperature Maser with Strong Coupling for Cavity Quantum Electrodynamics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300441. [PMID: 36919948 DOI: 10.1002/adma.202300441] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2023] [Revised: 03/04/2023] [Indexed: 06/02/2023]
Abstract
Masers can deliver ultralow-noise amplification of microwave signals in medical imaging and deep-space communication, with recent research being rekindled through the discovery of gain media operating at room-temperature, eschewing bulky cryogenics that hindered their use. This work shows the discovery of 6,13-diazapentacene doped in para-terphenyl (DAP:PTP) as a maser gain medium that can operate at room-temperature, without an external magnetic field. With a maser output power of -10 dBm, it is on par with pentacene-doped para-terphenyl in masing power, while possessing compelling advantages such as faster amplification startup times, being pumped by longer wavelength light at 620 nm and greater chemical stability from nitrogen groups. Furthermore, the maser bursts from DAP:PTP allow one to reach the strong coupling regime for cavity quantum electrodynamics, with a high cooperativity of 182. The optical and microwave spin dynamics of DAP:PTP are studied in order to evaluate its capabilities as a maser gain medium, where it features fast intersystem crossing and an advantageously higher triplet quantum yield. The results pave the way for the future discovery of similar maser materials and help designate them as promising candidates for quantum sensors, optoelectronic devices and the study of cavity quantum electrodynamic effects at room-temperature.
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Affiliation(s)
- Wern Ng
- Department of Materials, Imperial College London, London, SW7 2AZ, UK
| | - Xiaotian Xu
- Department of Materials, Imperial College London, London, SW7 2AZ, UK
| | - Max Attwood
- Department of Materials, Imperial College London, London, SW7 2AZ, UK
| | - Hao Wu
- Center for Quantum Technology Research and Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurements (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, China
| | - Zhu Meng
- Department of Chemistry and Centre for Processible Electronics, Imperial College London, London, W12 0BZ, UK
| | - Xi Chen
- Department of Materials, Imperial College London, London, SW7 2AZ, UK
- Department of Computer Science, University of Southern California, Los Angeles, CA, USA
| | - Mark Oxborrow
- Department of Materials, Imperial College London, London, SW7 2AZ, UK
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Zhang Y, Yu Y, Liu X, Miao J, Han Y, Liu J, Wang L. An n-Type All-Fused-Ring Molecule with Photoresponse to 1000 nm for Highly Sensitive Near-Infrared Photodetector. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211714. [PMID: 36842062 DOI: 10.1002/adma.202211714] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2022] [Revised: 02/04/2023] [Indexed: 05/19/2023]
Abstract
Most of all-fused-ring π-conjugated molecules have wide or medium bandgap and show photo response in the visible range. In this work, an all-fused-ring n-type molecule, which exhibits an ultrasmall optical bandgap of 1.22 eV and strong near-infrared (NIR) absorption with an onset absorption wavelength of 1013 nm is reported. The molecule consists of 14 aromatic rings and has electron donor-acceptor characteristics. It exhibits excellent n-type properties with low-lying HOMO/LUMO energy levels of -5.48 eV/-3.95 eV and high electron mobility of 7.0 × 10-4 cm2 V-1 s-1 . Most importantly, its thin film exhibits a low trap density of 5.55 × 1016 cm-3 because of the fixed molecular conformation and consequently low conformation disorder. As a result, organic photodetector (OPD) based on the compound exhibits a remarkably low dark current density (Jd ) of 2.01 × 10-10 A cm-2 at 0 V. The device shows a shot-noise-limited specific detectivity (Dsh *) of exceeding 1013 Jones at 400-1000 nm wavelength region with a peak specific detectivity of 4.65 × 1013 Jones at 880 nm. This performance is among the best reported for self-powered NIR OPDs.
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Affiliation(s)
- Yingze Zhang
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Yingjian Yu
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Xinyu Liu
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Junhui Miao
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
| | - Yanchun Han
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Jun Liu
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Lixiang Wang
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, P. R. China
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