1
|
Su L, Hu Z, Yan T, Zhang X, Zhang D, Fang X. Light-Adapted Optoelectronic-Memristive Device for the Artificial Visual System. ACS APPLIED MATERIALS & INTERFACES 2024; 16:43742-43751. [PMID: 39114944 DOI: 10.1021/acsami.4c07976] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/23/2024]
Abstract
With the development of artificial intelligence systems, it is necessary to develop optoelectronic devices with photoresponse and storage capacity to simulate human visual perception systems. The key to an artificial visual perception system is to integrate components with both sensing and storage capabilities of illumination information. Although module integration components have made useful progress, they still face challenges such as multispectral response and high energy consumption. Here, we developed a light-adapted optoelectronic-memristive device integrated by an organic photodetector and ferroelectric-based memristor to simulate human visual perception. ITO/P3HT:PC71BM/Au as the light sensor unit shows a high on/off ratio (Iph/Id) reaching ∼5 × 104 at 0 V. The memristor unit, consisting of ITO/CBI@P(VDF-TrFE)/Cu, has a RON/ROFF ratio window of ∼106 under 0.05 V read voltage and ultralow power consumption of ∼1 pW. Moreover, the artificial visual perception unit shows stable light-adapted memory windows under different wavelengths of irradiation light (400, 500, and 600 nm; they meet the spectral range of human visual recognition) and can clearly identify the target image ("T" shape) because of the apparent contrast, which results from the high ROFF/RON ratio values. These results provide a potential design strategy for the development of intelligent artificial vision systems.
Collapse
Affiliation(s)
- Li Su
- Engineering Research Center of Optical Instrument and System, Ministry of Education and Shanghai Key Lab of Modern Optical System, University of Shanghai for Science and Technology Shanghai 200093, P. R. China
| | - Zijun Hu
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai 200433, P. R. China
| | - Tingting Yan
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai 200433, P. R. China
| | - Xinglong Zhang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai 200433, P. R. China
| | - Dawei Zhang
- Engineering Research Center of Optical Instrument and System, Ministry of Education and Shanghai Key Lab of Modern Optical System, University of Shanghai for Science and Technology Shanghai 200093, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai 200433, P. R. China
| |
Collapse
|
2
|
Pham PV, Mai TH, Dash SP, Biju V, Chueh YL, Jariwala D, Tung V. Transfer of 2D Films: From Imperfection to Perfection. ACS NANO 2024; 18:14841-14876. [PMID: 38810109 PMCID: PMC11171780 DOI: 10.1021/acsnano.4c00590] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2024] [Revised: 04/03/2024] [Accepted: 04/12/2024] [Indexed: 05/31/2024]
Abstract
Atomically thin 2D films and their van der Waals heterostructures have demonstrated immense potential for breakthroughs and innovations in science and technology. Integrating 2D films into electronics and optoelectronics devices and their applications in electronics and optoelectronics can lead to improve device efficiencies and tunability. Consequently, there has been steady progress in large-area 2D films for both front- and back-end technologies, with a keen interest in optimizing different growth and synthetic techniques. Parallelly, a significant amount of attention has been directed toward efficient transfer techniques of 2D films on different substrates. Current methods for synthesizing 2D films often involve high-temperature synthesis, precursors, and growth stimulants with highly chemical reactivity. This limitation hinders the widespread applications of 2D films. As a result, reports concerning transfer strategies of 2D films from bare substrates to target substrates have proliferated, showcasing varying degrees of cleanliness, surface damage, and material uniformity. This review aims to evaluate, discuss, and provide an overview of the most advanced transfer methods to date, encompassing wet, dry, and quasi-dry transfer methods. The processes, mechanisms, and pros and cons of each transfer method are critically summarized. Furthermore, we discuss the feasibility of these 2D film transfer methods, concerning their applications in devices and various technology platforms.
Collapse
Affiliation(s)
- Phuong V. Pham
- Department
of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - The-Hung Mai
- Department
of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Saroj P. Dash
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, Gothenburg 41296, Sweden
| | - Vasudevanpillai Biju
- Research
Institute for Electronic Science, Hokkaido
University, Hokkaido 001-0020, Japan
| | - Yu-Lun Chueh
- Department
of Materials Science and Engineering, National
Tsing Hua University, Hsinchu 30013, Taiwan
| | - Deep Jariwala
- Department
of Electrical and Systems Engineering, University
of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Vincent Tung
- Department
of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| |
Collapse
|
3
|
Zhang C, Jiang Z, Jiang J, He W, Zhang J, Hu F, Zhao S, Yang D, Liu Y, Peng Y, Yang H, Yang H. Above-room-temperature chiral skyrmion lattice and Dzyaloshinskii-Moriya interaction in a van der Waals ferromagnet Fe 3-xGaTe 2. Nat Commun 2024; 15:4472. [PMID: 38796498 PMCID: PMC11127993 DOI: 10.1038/s41467-024-48799-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/23/2023] [Accepted: 05/14/2024] [Indexed: 05/28/2024] Open
Abstract
Skyrmions in existing 2D van der Waals (vdW) materials have primarily been limited to cryogenic temperatures, and the underlying physical mechanism of the Dzyaloshinskii-Moriya interaction (DMI), a crucial ingredient for stabilizing chiral skyrmions, remains inadequately explored. Here, we report the observation of Néel-type skyrmions in a vdW ferromagnet Fe3-xGaTe2 above room temperature. Contrary to previous assumptions of centrosymmetry in Fe3-xGaTe2, the atomic-resolution scanning transmission electron microscopy reveals that the off-centered FeΙΙ atoms break the spatial inversion symmetry, rendering it a polar metal. First-principles calculations further elucidate that the DMI primarily stems from the Te sublayers through the Fert-Lévy mechanism. Remarkably, the chiral skyrmion lattice in Fe3-xGaTe2 can persist up to 330 K at zero magnetic field, demonstrating superior thermal stability compared to other known skyrmion vdW magnets. This work provides valuable insights into skyrmionics and presents promising prospects for 2D material-based skyrmion devices operating beyond room temperature.
Collapse
Affiliation(s)
- Chenhui Zhang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Ze Jiang
- School of Materials and Energy and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou, 730000, China
| | - Jiawei Jiang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Wa He
- School of Materials and Energy and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou, 730000, China
| | - Junwei Zhang
- School of Materials and Energy and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou, 730000, China
| | - Fanrui Hu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Shishun Zhao
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Dongsheng Yang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Yakun Liu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Yong Peng
- School of Materials and Energy and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou, 730000, China.
| | - Hongxin Yang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
- Center for Quantum Matter, School of Physics, Zhejiang University, Hangzhou, 310058, China.
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore.
| |
Collapse
|
4
|
Li J, Fan F, Fu X, Liu M, Chen Y, Zhang B. Building Uniformly Structured Polymer Memristors via a 2D Conjugation Strategy for Neuromorphic Computing. Macromol Rapid Commun 2024:e2400172. [PMID: 38627960 DOI: 10.1002/marc.202400172] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/22/2024] [Revised: 04/15/2024] [Indexed: 04/23/2024]
Abstract
Polymer memristors represent a highly promising avenue for the advancement of next-generation computing systems. However, the intrinsic structural heterogeneity characteristic of most polymers often results in organic polymer memristors displaying erratic resistive switching phenomena, which in turn lead to diminished production yields and compromised reliability. In this study, a 2D conjugated polymer, named PBDTT-BPQTPA, is synthesized by integrating the coplanar bis(thiophene)-4,8-dihydrobenzo[1,2-b:4,5-b]dithiophene (BDTT) as an electron-donating unit with a quinoxaline derivative serving as an electron-accepting unit. The incorporation of triphenylamine groups at the quinoxaline termini significantly enhances the polymer's conjugation and planarity, thereby facilitating more efficient charge transport. The fabricated polymer memristor with the structure of Al/PBDTT-BPQTPA/ITO exhibits typical non-volatile resistive switching behavior under high voltage conditions, along with history-dependent memristive properties at lower voltages. The unique memristive behavior of the device enables the simulation of synaptic enhancement/inhibition, learning algorithms, and memory operations. Additionally, the memristor demonstrates its capability for executing logical operations and handling decimal calculations. This study offers a promising and innovative approach for the development of artificial neuromorphic computing systems.
Collapse
Affiliation(s)
- Jinyong Li
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai, 200237, China
| | - Fei Fan
- Shanghai Key Laboratory of Crime Scene Evidence, Shanghai Research Institute of Criminal Science and Technology, Shanghai, 200083, China
| | - Xin Fu
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai, 200237, China
| | - Mingxing Liu
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai, 200237, China
| | - Yu Chen
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai, 200237, China
| | - Bin Zhang
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai, 200237, China
| |
Collapse
|
5
|
Li S, Khan SU, Riaz MB, AlQahtani SA, Alamri AM. Numerical simulation of a fractional stochastic delay differential equations using spectral scheme: a comprehensive stability analysis. Sci Rep 2024; 14:6930. [PMID: 38521792 PMCID: PMC10960875 DOI: 10.1038/s41598-024-56944-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/04/2024] [Accepted: 03/12/2024] [Indexed: 03/25/2024] Open
Abstract
The fractional stochastic delay differential equation (FSDDE) is a powerful mathematical tool for modeling complex systems that exhibit both fractional order dynamics and stochasticity with time delays. The purpose of this study is to explore the stability analysis of a system of FSDDEs. Our study emphasizes the interaction between fractional calculus, stochasticity, and time delays in understanding the stability of such systems. Analyzing the moments of the system's solutions, we investigate stochasticity's influence on FSDDS. The article provides practical insight into solving FSDDS efficiently using various numerical techniques. Additionally, this research focuses both on asymptotic as well as Lyapunov stability of FSDDS. The local stability conditions are clearly presented and also the effects of a fractional orders with delay on the stability properties are examine. Through a comprehensive test of a stability criteria, practical examples and numerical simulations we demonstrate the complexity and challenges concern with the analyzing FSDDEs.
Collapse
Affiliation(s)
- Shuo Li
- School of Mathematics and Data Sciences, Changji University, Changji, 831100, Xinjiang, People's Republic of China
| | - Sami Ullah Khan
- Department of Mathematics, City University of Science and Information Technology, Peshawar, KP, 2500, Pakistan.
| | - Muhammad Bilal Riaz
- IT4Innovations, VSB- Technical University of Ostrava, Ostrava, Czech Republic
- Department of Computer Science and Mathematics, Lebanese American University, Byblos, Lebanon
| | - Salman A AlQahtani
- Computer Engineering Department, College of Computer and Information Sciences, King Saud University, Riyadh, Saudi Arabia
| | - Atif M Alamri
- Software Engineering Department, College of Computer and Information Sciences, King Saud University, Riyadh, Saudi Arabia
| |
Collapse
|
6
|
Wang J, Ilyas N, Ren Y, Ji Y, Li S, Li C, Liu F, Gu D, Ang KW. Technology and Integration Roadmap for Optoelectronic Memristor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307393. [PMID: 37739413 DOI: 10.1002/adma.202307393] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 09/10/2023] [Indexed: 09/24/2023]
Abstract
Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and optoelectronic systems. These OMs possess a range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, and the ability to replicate crucial neurological functions such as vision and optical memory. By incorporating large-scale parallel synaptic structures, OMs are anticipated to greatly enhance high-performance and low-power in-memory computing, effectively overcoming the limitations of the von Neumann bottleneck. However, progress in this field necessitates a comprehensive understanding of suitable structures and techniques for integrating low-dimensional materials into optoelectronic integrated circuit platforms. This review aims to offer a comprehensive overview of the fundamental performance, mechanisms, design of structures, applications, and integration roadmap of optoelectronic synaptic memristors. By establishing connections between materials, multilayer optoelectronic memristor units, and monolithic optoelectronic integrated circuits, this review seeks to provide insights into emerging technologies and future prospects that are expected to drive innovation and widespread adoption in the near future.
Collapse
Affiliation(s)
- Jinyong Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Nasir Ilyas
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Yujing Ren
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore
| | - Yun Ji
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Changcun Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Deen Gu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore, 138634, Singapore
| |
Collapse
|
7
|
Weng Z, Zheng H, Li L, Lei W, Jiang H, Ang KW, Zhao Z. Reliable Memristor Crossbar Array Based on 2D Layered Nickel Phosphorus Trisulfide for Energy-Efficient Neuromorphic Hardware. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2304518. [PMID: 37752744 DOI: 10.1002/smll.202304518] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2023] [Revised: 08/04/2023] [Indexed: 09/28/2023]
Abstract
Designing reliable and energy-efficient memristors for artificial synaptic arrays in neuromorphic computing beyond von Neumann architecture remains a challenge. Here, memristors based on emerging layered nickel phosphorus trisulfide (NiPS3 ) are reported that exhibit several favorable characteristics, including uniform bipolar nonvolatile switching with small operating voltage (<1 V), fast switching speed (< 20 ns), high On/Off ratio (>102 ), and the ability to achieve programmable multilevel resistance states. Through direct experimental evidence using transmission electron microscopy and energy dispersive X-ray spectroscopy, it is revealed that the resistive switching mechanism in the Ti/NiPS3 /Au device is related to the formation and dissolution of Ti conductive filaments. Intriguingly, further investigation into the microstructural and chemical properties of NiPS3 suggests that the penetration of Ti ions is accompanied by the drift of phosphorus-sulfur ions, leading to induced P/S vacancies that facilitate the formation of conductive filaments. Furthermore, it is demonstrated that the memristor, when operating in quasi-reset mode, effectively emulates long-term synaptic weight plasticity. By utilizing a crossbar array, multipattern memorization and multiply-and-accumulate (MAC) operations are successfully implemented. Moreover, owing to the highly linear and symmetric multiple conductance states, a high pattern recognition accuracy of ≈96.4% is demonstrated in artificial neural network simulation for neuromorphic systems.
Collapse
Affiliation(s)
- Zhengjin Weng
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
| | - Haofei Zheng
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Lingqi Li
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Wei Lei
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
| | - Helong Jiang
- State Key Laboratory of Lake Science and Environment, Nanjing Institute of Geography and Limnology Chinese Academy of Sciences, Nanjing, 210008, China
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore, 138634, Singapore
| | - Zhiwei Zhao
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
| |
Collapse
|
8
|
Liu C, Pan J, Yuan Q, Zhu C, Liu J, Ge F, Zhu J, Xie H, Zhou D, Zhang Z, Zhao P, Tian B, Huang W, Wang L. Highly Reliable Van Der Waals Memory Boosted by a Single 2D Charge Trap Medium. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305580. [PMID: 37882079 DOI: 10.1002/adma.202305580] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2023] [Revised: 10/11/2023] [Indexed: 10/27/2023]
Abstract
Charge trap materials that can store carriers efficiently and controllably are desired for memory applications. 2D materials are promising for highly compacted and reliable memory mainly due to their ease of constructing atomically uniform interfaces, however, remain unexplored as being charge trap media. Here it is discovered that 2D semiconducting PbI2 is an excellent charge trap material for nonvolatile memory and artificial synapses. It is simple to construct PbI2 -based charge trap devices since no complicated synthesis or additional defect manufacturing are required. As a demonstration, MoS2 /PbI2 device exhibits a large memory window of 120 V, fast write speed of 5 µs, high on-off ratio around 106 , multilevel memory of over 8 distinct states, high reliability with endurance up to 104 cycles and retention over 1.2 × 104 s. It is envisioned that PbI2 with ionic activity caused by the natively formed iodine vacancies is unique to combine with unlimited 2D materials for versatile van der Waals devices with high-integration and multifunctionality.
Collapse
Affiliation(s)
- Chao Liu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
| | - Jie Pan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Qihui Yuan
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
| | - Chao Zhu
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
| | - Jianquan Liu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Feixiang Ge
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jijie Zhu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Haitao Xie
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Dawei Zhou
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Zicheng Zhang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Peiyi Zhao
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Bobo Tian
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Wei Huang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
- Frontiers Science Center for Flexible Electronics (FSCFE), Key Laboratory of Flexible Electronics (KLOFE), Shaanxi Institute of Flexible Electronics (SIFE), Institute of Flexible Electronics (IFE), North-Western Polytechnical University (NPU), Xi'an, 710072, China
- School of Flexible Electronics (SoFE) & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangdong, 518107, China
- State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| |
Collapse
|
9
|
Yan X, Zheng Z, Sangwan VK, Qian JH, Wang X, Liu SE, Watanabe K, Taniguchi T, Xu SY, Jarillo-Herrero P, Ma Q, Hersam MC. Moiré synaptic transistor with room-temperature neuromorphic functionality. Nature 2023; 624:551-556. [PMID: 38123805 DOI: 10.1038/s41586-023-06791-1] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/11/2023] [Accepted: 10/26/2023] [Indexed: 12/23/2023]
Abstract
Moiré quantum materials host exotic electronic phenomena through enhanced internal Coulomb interactions in twisted two-dimensional heterostructures1-4. When combined with the exceptionally high electrostatic control in atomically thin materials5-8, moiré heterostructures have the potential to enable next-generation electronic devices with unprecedented functionality. However, despite extensive exploration, moiré electronic phenomena have thus far been limited to impractically low cryogenic temperatures9-14, thus precluding real-world applications of moiré quantum materials. Here we report the experimental realization and room-temperature operation of a low-power (20 pW) moiré synaptic transistor based on an asymmetric bilayer graphene/hexagonal boron nitride moiré heterostructure. The asymmetric moiré potential gives rise to robust electronic ratchet states, which enable hysteretic, non-volatile injection of charge carriers that control the conductance of the device. The asymmetric gating in dual-gated moiré heterostructures realizes diverse biorealistic neuromorphic functionalities, such as reconfigurable synaptic responses, spatiotemporal-based tempotrons and Bienenstock-Cooper-Munro input-specific adaptation. In this manner, the moiré synaptic transistor enables efficient compute-in-memory designs and edge hardware accelerators for artificial intelligence and machine learning.
Collapse
Affiliation(s)
- Xiaodong Yan
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA
| | - Zhiren Zheng
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Vinod K Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA
| | - Justin H Qian
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA
| | - Xueqiao Wang
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Stephanie E Liu
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Material Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Su-Yang Xu
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA
| | | | - Qiong Ma
- Department of Physics, Boston College, Chestnut Hill, MA, USA.
- CIFAR Azrieli Global Scholars Program, CIFAR, Toronto, Ontario, Canada.
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA.
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, USA.
- Department of Chemistry, Northwestern University, Evanston, IL, USA.
| |
Collapse
|
10
|
Ma Y, Yan Y, Luo L, Pazos S, Zhang C, Lv X, Chen M, Liu C, Wang Y, Chen A, Li Y, Zheng D, Lin R, Algaidi H, Sun M, Liu JZ, Tu S, Alshareef HN, Gong C, Lanza M, Xue F, Zhang X. High-performance van der Waals antiferroelectric CuCrP 2S 6-based memristors. Nat Commun 2023; 14:7891. [PMID: 38036500 PMCID: PMC10689492 DOI: 10.1038/s41467-023-43628-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/08/2023] [Accepted: 11/15/2023] [Indexed: 12/02/2023] Open
Abstract
Layered thio- and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, the CuInP2S6-based memory devices suffer from poor thermal stability (<42 °C). Here, exploiting the electric field-driven phase transition in the rarely studied antiferroelectric CuCrP2S6 crystals, we develop a nonvolatile memristor showing a sizable resistive-switching ratio of ~ 1000, high switching endurance up to 20,000 cycles, low cycle-to-cycle variation, and robust thermal stability up to 120 °C. The resistive switching is attributed to the ferroelectric polarization-modulated thermal emission accompanied by the Fowler-Nordheim tunneling across the interfaces. First-principles calculations reveal that the good device performances are associated with the exceptionally strong ferroelectric polarization in CuCrP2S6 crystal. Furthermore, the typical biological synaptic learning rules, such as long-term potentiation/depression and spike amplitude/spike time-dependent plasticity, are also demonstrated. The results highlight the great application potential of van der Waals antiferroelectrics in high-performance synaptic devices for neuromorphic computing.
Collapse
Affiliation(s)
- Yinchang Ma
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yuan Yan
- Department of Mechanical Engineering, The University of Melbourne, Parkville, Vic, 3010, Australia
| | - Linqu Luo
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Sebastian Pazos
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Chenhui Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Xiang Lv
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, China
| | - Maolin Chen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Chen Liu
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yizhou Wang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Aitian Chen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yan Li
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Dongxing Zheng
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Rongyu Lin
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Hanin Algaidi
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Minglei Sun
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Jefferson Zhe Liu
- Department of Mechanical Engineering, The University of Melbourne, Parkville, Vic, 3010, Australia
| | - Shaobo Tu
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Husam N Alshareef
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Cheng Gong
- Department of Electrical and Computer Engineering and Quantum Technology Center, University of Maryland, College Park, MD, 20742, USA
| | - Mario Lanza
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Fei Xue
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou, 311215, China.
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia.
| |
Collapse
|
11
|
Zhang C, Ning J, Wang D, Zhang J, Hao Y. A review on advanced band-structure engineering with dynamic control for nonvolatile memory based 2D transistors. NANOTECHNOLOGY 2023; 35:042001. [PMID: 37524059 DOI: 10.1088/1361-6528/acebf4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2022] [Accepted: 07/31/2023] [Indexed: 08/02/2023]
Abstract
With advancements in information technology, an enormous amount of data is being generated that must be quickly accessible. However, conventional Si memory cells are approaching their physical limits and will be unable to meet the requirements of intense applications in the future. Notably, 2D atomically thin materials have demonstrated multiple novel physical and chemical properties that can be used to investigate next-generation electronic devices and breakthrough physical limits to continue Moore's law. Band structure is an important semiconductor parameter that determines their electrical and optical properties. In particular, 2D materials have highly tunable bandgaps and Fermi levels that can be achieved through band structure engineering methods such as heterostructure, substrate engineering, chemical doping, intercalation, and electrostatic doping. In particular, dynamic control of band structure engineering can be used in recent advancements in 2D devices to realize nonvolatile storage performance. This study examines recent advancements in 2D memory devices that utilize band structure engineering. The operational mechanisms and memory characteristics are described for each band structure engineering method. Band structure engineering provides a platform for developing new structures and realizing superior performance with respect to nonvolatile memory.
Collapse
Affiliation(s)
- Chi Zhang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Jing Ning
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Dong Wang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
- Xidian-Wuhu Research Institute, Wuhu 241000, People's Republic of China
| | - Jincheng Zhang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Yue Hao
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| |
Collapse
|
12
|
John JW, Mishra A, Debbarma R, Verzhbitskiy I, Goh KEJ. Probing charge traps at the 2D semiconductor/dielectric interface. NANOSCALE 2023; 15:16818-16835. [PMID: 37842965 DOI: 10.1039/d3nr03453d] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/17/2023]
Abstract
The family of 2-dimensional (2D) semiconductors is a subject of intensive scientific research due to their potential in next-generation electronics. While offering many unique properties like atomic thickness and chemically inert surfaces, the integration of 2D semiconductors with conventional dielectric materials is challenging. The charge traps at the semiconductor/dielectric interface are among many issues to be addressed before these materials can be of industrial relevance. Conventional electrical characterization methods remain inadequate to quantify the traps at the 2D semiconductor/dielectric interface since the estimations of the density of interface traps, Dit, by different techniques may yield more than an order-of-magnitude discrepancy, even when extracted from the same device. Therefore, the challenge to quantify Dit at the 2D semiconductor/dielectric interface is about finding an accurate and reliable measurement method. In this review, we discuss characterization techniques which have been used to study the 2D semiconductor/dielectric interface. Specifically, we discuss the methods based on small-signal AC measurements, subthreshold slope measurements and low-frequency noise measurements. While these approaches were developed for silicon-based technology, 2D semiconductor devices possess a set of unique challenges requiring a careful re-evaluation when using these characterization techniques. We examine the conventional methods based on their efficacy and accuracy in differentiating various types of trap states and provide guidance to find an appropriate method for charge trap analysis and estimation of Dit at 2D semiconductor/dielectric interfaces.
Collapse
Affiliation(s)
- John Wellington John
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
| | - Abhishek Mishra
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
| | - Rousan Debbarma
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
| | - Ivan Verzhbitskiy
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| |
Collapse
|
13
|
Cao F, Hu Z, Yan T, Hong E, Deng X, Wu L, Fang X. A Dual-Functional Perovskite-Based Photodetector and Memristor for Visual Memory. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2304550. [PMID: 37467009 DOI: 10.1002/adma.202304550] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2023] [Revised: 07/16/2023] [Accepted: 07/17/2023] [Indexed: 07/20/2023]
Abstract
The imitation of human visual memory demands the multifunctional integration of light sensors similar to the eyes, and image memory, similar to the brain. Although humans have already implemented electronic devices with visual memory functions, these devices require a combination of various components and logical circuits. However, the combination of visual perception and high-performance information storage capabilities into a single device to achieve visual memory remains challenging. In this study, inspired by the function of human visual memory, a dual-functional perovskite-based photodetector (PD) and memristor are designed to realize visual perception and memory capacities. As a PD, it realizes an ultrahigh self-powered responsivity of 276 mA W-1 , a high detectivity of 4.7 × 1011 Jones (530 nm; light intensities, 2.34 mW cm-2 ), and a high rectification ratio of ≈100 (±2 V). As a memristor, an ultrahigh on/off ratio (≈105 ), an ultralow power consumption of 3 × 10-11 W, a low setting voltage (0.15 V), and a long retention time (>7000 s) are realized. Moreover, the dual-functional device has the capacity to perceive and remember light paths and store data with good cyclic stability. This device exhibits perceptual and cyclic erasable memory functions, which provides new opportunities for mimicking human visual memory in future multifunctional applications.
Collapse
Affiliation(s)
- Fa Cao
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
| | - Zijun Hu
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
| | - Tingting Yan
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
| | - Enliu Hong
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
| | - Xiaolei Deng
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
| | - Limin Wu
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
- College of Chemistry and Chemical Engineering Inner Mongolia University Hohhot, Hohhot, 010021, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
| |
Collapse
|
14
|
Ding G, Zhao J, Zhou K, Zheng Q, Han ST, Peng X, Zhou Y. Porous crystalline materials for memories and neuromorphic computing systems. Chem Soc Rev 2023; 52:7071-7136. [PMID: 37755573 DOI: 10.1039/d3cs00259d] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/28/2023]
Abstract
Porous crystalline materials usually include metal-organic frameworks (MOFs), covalent organic frameworks (COFs), hydrogen-bonded organic frameworks (HOFs) and zeolites, which exhibit exceptional porosity and structural/composition designability, promoting the increasing attention in memory and neuromorphic computing systems in the last decade. From both the perspective of materials and devices, it is crucial to provide a comprehensive and timely summary of the applications of porous crystalline materials in memory and neuromorphic computing systems to guide future research endeavors. Moreover, the utilization of porous crystalline materials in electronics necessitates a shift from powder synthesis to high-quality film preparation to ensure high device performance. This review highlights the strategies for preparing porous crystalline materials films and discusses their advancements in memory and neuromorphic electronics. It also provides a detailed comparative analysis and presents the existing challenges and future research directions, which can attract the experts from various fields (e.g., materials scientists, chemists, and engineers) with the aim of promoting the applications of porous crystalline materials in memory and neuromorphic computing systems.
Collapse
Affiliation(s)
- Guanglong Ding
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - JiYu Zhao
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
- State Key Laboratory of Fine Chemicals, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - Qi Zheng
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Xiaojun Peng
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
- State Key Laboratory of Fine Chemicals, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| |
Collapse
|
15
|
Nikam RD, Lee J, Lee K, Hwang H. Exploring the Cutting-Edge Frontiers of Electrochemical Random Access Memories (ECRAMs) for Neuromorphic Computing: Revolutionary Advances in Material-to-Device Engineering. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302593. [PMID: 37300356 DOI: 10.1002/smll.202302593] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2023] [Revised: 05/23/2023] [Indexed: 06/12/2023]
Abstract
Advanced materials and device engineering has played a crucial role in improving the performance of electrochemical random access memory (ECRAM) devices. ECRAM technology has been identified as a promising candidate for implementing artificial synapses in neuromorphic computing systems due to its ability to store analog values and its ease of programmability. ECRAM devices consist of an electrolyte and a channel material sandwiched between two electrodes, and the performance of these devices depends on the properties of the materials used. This review provides a comprehensive overview of material engineering strategies to optimize the electrolyte and channel materials' ionic conductivity, stability, and ionic diffusivity to improve the performance and reliability of ECRAM devices. Device engineering and scaling strategies are further discussed to enhance ECRAM performance. Last, perspectives on the current challenges and future directions in developing ECRAM-based artificial synapses in neuromorphic computing systems are provided.
Collapse
Affiliation(s)
- Revannath Dnyandeo Nikam
- Center for Single Atom-based Semiconductor Device, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
- Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
| | - Jongwon Lee
- Center for Single Atom-based Semiconductor Device, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
- Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
| | - Kyumin Lee
- Center for Single Atom-based Semiconductor Device, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
- Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
| | - Hyunsang Hwang
- Center for Single Atom-based Semiconductor Device, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
- Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
| |
Collapse
|
16
|
Fan CC, Liu CD, Liang BD, Jin ML, Ju TY, Chai CY, Han XB, Zhang W. A Two-Dimensional Hybrid Lead Bromide Ferroelectric Semiconductor with an Out-of-Plane Polarization. Inorg Chem 2023; 62:12634-12638. [PMID: 37534962 DOI: 10.1021/acs.inorgchem.3c02057] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/04/2023]
Abstract
A two-dimensional (2D) organic-inorganic hybrid perovskite (OIHP) material with out-of-plane ferroelectricity is the key to the miniaturization of vertical-sandwich-type ferroelectric optoelectronic devices. However, 2D OIHP ferroelectrics with out-of-plane polarization are still scarce, and effective design strategies are lacking. Herein, we report a novel 2D Dion-Jacobson perovskite ferroelectric semiconductor synthesized by a rigid-to-flexible cationic tailoring strategy, achieving an out-of-plane polarization of 1.7 μC/cm2 and high photoresponse. Integrating out-of-plane ferroelectricity with excellent photoelectric properties affords a promising platform to investigate ferroelectricity-related effects in vertical optoelectronic devices.
Collapse
Affiliation(s)
- Chang-Chun Fan
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China
| | - Cheng-Dong Liu
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China
| | - Bei-Dou Liang
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China
| | - Ming-Liang Jin
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China
| | - Tong-Yu Ju
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China
| | - Chao-Yang Chai
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China
| | - Xiang-Bin Han
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China
| | - Wen Zhang
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China
| |
Collapse
|
17
|
Boschetto G, Carapezzi S, Todri-Sanial A. Non-volatile resistive switching mechanism in single-layer MoS 2 memristors: insights from ab initio modelling of Au and MoS 2 interfaces. NANOSCALE ADVANCES 2023; 5:4203-4212. [PMID: 37560426 PMCID: PMC10408618 DOI: 10.1039/d3na00045a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Accepted: 07/18/2023] [Indexed: 08/11/2023]
Abstract
Non-volatile memristive devices based on two-dimensional (2D) layered materials provide an attractive alternative to conventional flash memory chips. Single-layer semiconductors, such as monolayer molybdenum disulphide (ML-MoS2), enable the aggressive downscaling of devices towards greater system integration density. The "atomristor", the most compact device to date, has been shown to undergo a resistive switching between its high-resistance (HRS) and low-resistance (LRS) states of several orders of magnitude. The main hypothesis behind its working mechanism relies on the migration of sulphur vacancies in the proximity of the metal contact during device operation, thus inducing the variation of the Schottky barrier at the metal-semiconductor interface. However, the interface physics is not yet fully understood: other hypotheses were proposed, involving the migration of metal atoms from the electrode. In this work, we aim to elucidate the mechanism of the resistive switching in the atomristor. We carry out density functional theory (DFT) simulations on model Au and ML-MoS2 interfaces with and without the presence of point defects, either vacancies or substitutions. To construct realistic interfaces, we combine DFT with Green's function surface simulations. Our findings reveal that it is not the mere presence of S vacancies but rather the migration of Au atoms from the electrode to MoS2 that modulate the interface barrier. Indeed, Au atoms act as conductive "bridges", thus facilitating the flow of charge between the two materials.
Collapse
Affiliation(s)
- Gabriele Boschetto
- Laboratory of Computer Science, Robotics, and Microelectronics, University of Montpellier, CNRS 161 Rue Ada 34095 Montpellier France
| | - Stefania Carapezzi
- Laboratory of Computer Science, Robotics, and Microelectronics, University of Montpellier, CNRS 161 Rue Ada 34095 Montpellier France
| | - Aida Todri-Sanial
- Laboratory of Computer Science, Robotics, and Microelectronics, University of Montpellier, CNRS 161 Rue Ada 34095 Montpellier France
- Department of Electrical Engineering, Eindhoven University of Technology Groene Loper 3 5612 AE Eindhoven Netherlands
| |
Collapse
|
18
|
Assi DS, Huang H, Karthikeyan V, Theja VCS, de Souza MM, Xi N, Li WJ, Roy VAL. Quantum Topological Neuristors for Advanced Neuromorphic Intelligent Systems. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2300791. [PMID: 37340871 PMCID: PMC10460853 DOI: 10.1002/advs.202300791] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 04/02/2023] [Indexed: 06/22/2023]
Abstract
Neuromorphic artificial intelligence systems are the future of ultrahigh performance computing clusters to overcome complex scientific and economical challenges. Despite their importance, the advancement in quantum neuromorphic systems is slow without specific device design. To elucidate biomimicking mammalian brain synapses, a new class of quantum topological neuristors (QTN) with ultralow energy consumption (pJ) and higher switching speed (µs) is introduced. Bioinspired neural network characteristics of QTNs are the effects of edge state transport and tunable energy gap in the quantum topological insulator (QTI) materials. With augmented device and QTI material design, top notch neuromorphic behavior with effective learning-relearning-forgetting stages is demonstrated. Critically, to emulate the real-time neuromorphic efficiency, training of the QTNs is demonstrated with simple hand gesture game by interfacing them with artificial neural networks to perform decision-making operations. Strategically, the QTNs prove the possession of incomparable potential to realize next-gen neuromorphic computing for the development of intelligent machines and humanoids.
Collapse
Affiliation(s)
- Dani S. Assi
- Electronics and Nanoscale EngineeringJames Watt School of EngineeringUniversity of GlasgowGlasgowG12 8QQUK
| | - Hongli Huang
- Electronics and Nanoscale EngineeringJames Watt School of EngineeringUniversity of GlasgowGlasgowG12 8QQUK
| | - Vaithinathan Karthikeyan
- Electronics and Nanoscale EngineeringJames Watt School of EngineeringUniversity of GlasgowGlasgowG12 8QQUK
| | - Vaskuri C. S. Theja
- Materials Science and EngineeringCity University of Hong KongTat Chee AvenueHong KongHong Kong
| | | | - Ning Xi
- Industrial and Manufacturing Systems EngineeringThe University of Hong KongPokfulam RoadHong KongHong Kong
| | - Wen Jung Li
- Mechanical EngineeringCity University of Hong KongTat Chee AvenueHong KongHong Kong
| | - Vellaisamy A. L. Roy
- School of Science and TechnologyHong Kong Metropolitan UniversityHo Man TinHong KongHong Kong
| |
Collapse
|
19
|
Yang AJ, Wang SX, Xu J, Loh XJ, Zhu Q, Wang XR. Two-Dimensional Layered Materials Meet Perovskite Oxides: A Combination for High-Performance Electronic Devices. ACS NANO 2023. [PMID: 37171107 DOI: 10.1021/acsnano.3c00429] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
As the Si-based transistors scale down to atomic dimensions, the basic principle of current electronics, which heavily relies on the tunable charge degree of freedom, faces increasing challenges to meet the future requirements of speed, switching energy, heat dissipation, and packing density as well as functionalities. Heterogeneous integration, where dissimilar layers of materials and functionalities are unrestrictedly stacked at an atomic scale, is appealing for next-generation electronics, such as multifunctional, neuromorphic, spintronic, and ultralow-power devices, because it unlocks technologically useful interfaces of distinct functionalities. Recently, the combination of functional perovskite oxides and two-dimensional layered materials (2DLMs) led to unexpected functionalities and enhanced device performance. In this paper, we review the recent progress of the heterogeneous integration of perovskite oxides and 2DLMs from the perspectives of fabrication and interfacial properties, electronic applications, and challenges as well as outlooks. In particular, we focus on three types of attractive applications, namely field-effect transistors, memory, and neuromorphic electronics. The van der Waals integration approach is extendible to other oxides and 2DLMs, leading to almost unlimited combinations of oxides and 2DLMs and contributing to future high-performance electronic and spintronic devices.
Collapse
Affiliation(s)
- Allen Jian Yang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Su-Xi Wang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
| | - Jianwei Xu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
- Institute of Sustainability for Chemicals, Energy and Environment (ISCE2), Agency for Science, Technology and Research (A*STAR), 1 Pesek Road, Jurong Island, Singapore, 627833, Singapore
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
| | - Xian Jun Loh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
- Institute of Sustainability for Chemicals, Energy and Environment (ISCE2), Agency for Science, Technology and Research (A*STAR), 1 Pesek Road, Jurong Island, Singapore, 627833, Singapore
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
| | - Qiang Zhu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
- Institute of Sustainability for Chemicals, Energy and Environment (ISCE2), Agency for Science, Technology and Research (A*STAR), 1 Pesek Road, Jurong Island, Singapore, 627833, Singapore
- School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Xiao Renshaw Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore 639798, Singapore
| |
Collapse
|
20
|
Batool S, Idrees M, Han ST, Roy VAL, Zhou Y. Electrical Contacts With 2D Materials: Current Developments and Future Prospects. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206550. [PMID: 36587964 DOI: 10.1002/smll.202206550] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
Current electrical contact models are occasionally insufficient at the nanoscale owing to the wide variations in outcomes between 2D mono and multi-layered and bulk materials that result from their distinctive electrostatics and geometries. Contrarily, devices based on 2D semiconductors present a significant challenge due to the requirement for electrical contact with resistances close to the quantum limit. The next generation of low-power devices is already hindered by the lack of high-quality and low-contact-resistance contacts on 2D materials. The physics and materials science of electrical contact resistance in 2D materials-based nanoelectronics, interface configurations, charge injection mechanisms, and numerical modeling of electrical contacts, as well as the most pressing issues that need to be resolved in the field of research and development, will all be covered in this review.
Collapse
Affiliation(s)
- Saima Batool
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Muhammad Idrees
- Additive Manufacturing Institute, College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- College of Electronics Science & Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Vellaisamy A L Roy
- James Watt School of Engineering, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| |
Collapse
|