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Li M, Li M, An JS, An H, Kim DH, Lee YH, Park KK, Kim TW. Three-Dimensional Integrated Synaptic Devices Based on a Silver-Cluster Conduction Mechanism with High Thermostability. ACS APPLIED MATERIALS & INTERFACES 2024; 16:42380-42391. [PMID: 39090057 DOI: 10.1021/acsami.4c04957] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/04/2024]
Abstract
During the operation of synaptic devices based on traditional conductive filament (CF) models, the formation and dissolution of CFs are usually uncertain. Moreover, when the device is operated for a long time, the CFs may dissolve due to both the Joule heat generated by the device itself and the thermal coupling between the devices. These problems seriously reduce the reliability and stability of the synaptic device. Here, an artificial synapse device based on polyimide-molybdenum disulfide quantum dot (MoS2 QD) nanocomposites is presented. Research has shown that MoS2 QDs doped into the active layer can effectively induce the reduction of Ag ions into Ag atoms, leading to the formation of Ag clusters and thereby achieving control over the growth of the CFs. Therefore, the device is capable of stably realizing various basic synaptic functions. Moreover, the long-term potentiation/long-term depression (LTP/LTD) of this device shows good linearity. In addition, due to the change in the shape of the CFs, the highly integrated devices with a three-dimensional (3D) stacked structure can operate normally even in a high-temperature environment of 110 °C. Finally, the synaptic characteristics of the devices on learning and inference tests show that their recognition rates are approximately 90.75% (room temperature) and 90.63% (110 °C).
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Affiliation(s)
- Mingjun Li
- Department of Electronics and Computer Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Ming Li
- Department of Electronics and Computer Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jun Seop An
- Department of Electronics and Computer Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Haoqun An
- Research Institute of Industrial Science, Hanyang University, Seoul 04763, Republic of Korea
| | - Dae Hun Kim
- Research Institute of Industrial Science, Hanyang University, Seoul 04763, Republic of Korea
| | - Yong Hun Lee
- Research Institute of Industrial Science, Hanyang University, Seoul 04763, Republic of Korea
| | - Kwan Kyu Park
- Department of Mechanical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Tae Whan Kim
- Department of Electronics and Computer Engineering, Hanyang University, Seoul 04763, Republic of Korea
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2
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Zhang JB, Tian YB, Gu ZG, Zhang J. Metal-Organic Framework-Based Photodetectors. NANO-MICRO LETTERS 2024; 16:253. [PMID: 39048856 PMCID: PMC11269560 DOI: 10.1007/s40820-024-01465-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/19/2024] [Accepted: 06/16/2024] [Indexed: 07/27/2024]
Abstract
The unique and interesting physical and chemical properties of metal-organic framework (MOF) materials have recently attracted extensive attention in a new generation of photoelectric applications. In this review, we summarized and discussed the research progress on MOF-based photodetectors. The methods of preparing MOF-based photodetectors and various types of MOF single crystals and thin film as well as MOF composites are introduced in details. Additionally, the photodetectors applications for X-ray, ultraviolet and infrared light, biological detectors, and circularly polarized light photodetectors are discussed. Furthermore, summaries and challenges are provided for this important research field.
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Affiliation(s)
- Jin-Biao Zhang
- State Key Laboratory of Structural Chemistry, Structure of Matter, Fujian Institute of Research, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, People's Republic of China
- University of Chinese Academy of Science, Beijing, 100049, People's Republic of China
| | - Yi-Bo Tian
- State Key Laboratory of Structural Chemistry, Structure of Matter, Fujian Institute of Research, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, People's Republic of China
| | - Zhi-Gang Gu
- State Key Laboratory of Structural Chemistry, Structure of Matter, Fujian Institute of Research, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, People's Republic of China.
- College of Chemistry and Materials Science, Fujian Nornal University, Fuzhou, 350007, Fujian, People's Republic of China.
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, Fujian, People's Republic of China.
| | - Jian Zhang
- State Key Laboratory of Structural Chemistry, Structure of Matter, Fujian Institute of Research, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, People's Republic of China
- College of Chemistry and Materials Science, Fujian Nornal University, Fuzhou, 350007, Fujian, People's Republic of China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, Fujian, People's Republic of China
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3
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Roh H, Kim DH, Cho Y, Jo YM, Del Alamo JA, Kulik HJ, Dincă M, Gumyusenge A. Robust Chemiresistive Behavior in Conductive Polymer/MOF Composites. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312382. [PMID: 38632844 DOI: 10.1002/adma.202312382] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/19/2023] [Revised: 02/20/2024] [Indexed: 04/19/2024]
Abstract
Metal-organic frameworks (MOFs) are promising materials for gas sensing but are often limited to single-use detection. A hybridization strategy is demonstrated synergistically deploying conductive MOFs (cMOFs) and conductive polymers (cPs) as two complementary mixed ionic-electronic conductors in high-performing stand-alone chemiresistors. This work presents significant improvement in i) sensor recovery kinetics, ii) cycling stability, and iii) dynamic range at room temperature. The effect of hybridization across well-studied cMOFs is demonstrated based on 2,3,6,7,10,11-hexahydroxytriphenylene (HHTP) and 2,3,6,7,10,11-hexaiminotriphenylene (HITP) ligands with varied metal nodes (Co, Cu, Ni). A comprehensive mechanistic study is conducted to relate energy band alignments at the heterojunctions between the MOFs and the polymer with sensing thermodynamics and binding kinetics. The findings reveal that hole enrichment of the cMOF component upon hybridization leads to selective enhancement in desorption kinetics, enabling significantly improved sensor recovery at room temperature, and thus long-term response retention. This mechanism is further supported by density functional theory calculations on sorbate-analyte interactions. It is also found that alloying cPs and cMOFs enables facile thin film co-processing and device integration, potentially unlocking the use of these hybrid conductors in diverse electronic applications.
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Affiliation(s)
- Heejung Roh
- Massachusetts Institute of Technology, Department of Materials Science & Engineering, 77 Massachusetts Ave, Cambridge, MA, 02139, USA
- Massachusetts Institute of Technology, Department of Chemistry, 77 Massachusetts Ave, Cambridge, MA, 02139, USA
| | - Dong-Ha Kim
- Massachusetts Institute of Technology, Department of Chemistry, 77 Massachusetts Ave, Cambridge, MA, 02139, USA
| | - Yeongsu Cho
- Massachusetts Institute of Technology, Department of Chemistry, 77 Massachusetts Ave, Cambridge, MA, 02139, USA
- Massachusetts Institute of Technology, Department of Chemical Engineering, 77 Massachusetts Ave, Cambridge, MA, 02139, USA
| | - Young-Moo Jo
- Massachusetts Institute of Technology, Department of Chemistry, 77 Massachusetts Ave, Cambridge, MA, 02139, USA
| | - Jesús A Del Alamo
- Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 77 Massachusetts Ave, Cambridge, MA, 02139, USA
- MIT-IBM Watson AI Lab, 75 Binney St, Cambridge, MA, 02139, USA
| | - Heather J Kulik
- Massachusetts Institute of Technology, Department of Chemistry, 77 Massachusetts Ave, Cambridge, MA, 02139, USA
- Massachusetts Institute of Technology, Department of Chemical Engineering, 77 Massachusetts Ave, Cambridge, MA, 02139, USA
| | - Mircea Dincă
- Massachusetts Institute of Technology, Department of Chemistry, 77 Massachusetts Ave, Cambridge, MA, 02139, USA
| | - Aristide Gumyusenge
- Massachusetts Institute of Technology, Department of Materials Science & Engineering, 77 Massachusetts Ave, Cambridge, MA, 02139, USA
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Wei C, Wang Z, Hu Y, Huang J, Zhang Y, Wang H, Liu Q, Yu Z. Layer-by-layer growth of Cu 3(HHTP) 2 films on Cu(OH) 2 nanowire arrays for high performance ascorbic acid sensing. Biosens Bioelectron 2024; 255:116256. [PMID: 38555772 DOI: 10.1016/j.bios.2024.116256] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/02/2024] [Revised: 03/01/2024] [Accepted: 03/26/2024] [Indexed: 04/02/2024]
Abstract
Growing three-dimensional (3D) metal organic frameworks (MOFs) via heterogeneous epitaxial growth on metal hydroxide arrays are effective for constructing electrochemical sensor. However, the growth of MOFs is difficult to control, resulting in thick and irregular morphologies and even damage the metal hydroxide template. In this work, Cu3(HHTP)2 (HHTP = 2, 3, 6, 7, 10, 11-hexahydroxytriphenylene) films with controllable thickness and morphology were successfully prepared on Cu(OH)2 nanowire arrays (NWAs) through layer-by-layer (LBL) growth method. We have discovered that the LBL cycle and the reaction solvent composition are crucial for growing homogenous MOF thin films. The Cu3(HHTP)2 based ascorbic acid (AA) sensor, fabricated in ethanol within 10 LBL cycles, generated an ultrahigh sensitivity of 821.64 μA mM-1 cm-2 in the range of 6-981.41 μM, a low detection limit of 60 nM as well as the great selectivity, stability and reproducibility. Moreover, the relative deviation for AA detection in two fruit juices were 3.22 % and 3.71 %, and the test result for human sweat fall within the normal AA concentration range, verifying the feasibility of as-prepared sensor for practical application.
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Affiliation(s)
- Chenhuinan Wei
- Hubei Provincial Key Laboratory of Green Materials for Light Industry, School of Materials and Chemical Engineering, Hubei University of Technology, Wuhan, 430068, China; New Materials and Green Manufacturing Talent Introduction and Innovation Demonstration Base, Hubei University of Technology, Wuhan, China.
| | - Zhuo Wang
- Hubei Provincial Key Laboratory of Green Materials for Light Industry, School of Materials and Chemical Engineering, Hubei University of Technology, Wuhan, 430068, China
| | - Yurun Hu
- Hubei Provincial Key Laboratory of Green Materials for Light Industry, School of Materials and Chemical Engineering, Hubei University of Technology, Wuhan, 430068, China
| | - Jingqi Huang
- Hubei Provincial Key Laboratory of Green Materials for Light Industry, School of Materials and Chemical Engineering, Hubei University of Technology, Wuhan, 430068, China
| | - Yang Zhang
- Hubei Provincial Key Laboratory of Green Materials for Light Industry, School of Materials and Chemical Engineering, Hubei University of Technology, Wuhan, 430068, China
| | - Huihu Wang
- Hubei Provincial Key Laboratory of Green Materials for Light Industry, School of Materials and Chemical Engineering, Hubei University of Technology, Wuhan, 430068, China; New Materials and Green Manufacturing Talent Introduction and Innovation Demonstration Base, Hubei University of Technology, Wuhan, China
| | - Qiming Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Ziyang Yu
- Hubei Key Laboratory of Optical Information and Pattern Recognition, School of Optical Information and Energy Engineering, Wuhan Institute of Technology, Wuhan 430205, China.
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Song J, Liu C, Piradi V, Chen C, Zhu Y, Zhu X, Li L, Wong W, Yan F. Large-Area Fabrication of Hexaazatrinaphthylene-Based 2D Metal-Organic Framework Films for Flexible Photodetectors and Optoelectronic Synapses. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305551. [PMID: 38263724 PMCID: PMC10987135 DOI: 10.1002/advs.202305551] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2023] [Revised: 10/12/2023] [Indexed: 01/25/2024]
Abstract
2D conjugated metal-organic frameworks (c-MOFs) have emerged as promising materials for (opto)electronic applications due to their excellent charge transport properties originating from the unique layered-stacked structures with extended in-plane conjugation. The further advancement of MOF-based (opto)electronics necessitates the development of novel 2D c-MOF thin films with high quality. Cu-HHHATN (HHHATN: hexahydroxyl-hexaazatrinaphthylene) is a recently reported 2D c-MOF featuring high in-plane conjugation, strong interlayer π-π stacking, and multiple coordination sites, while the production of its thin-film form has not yet been reported. Herein, large-area Cu-HHHATN thin films with preferential orientation, high uniformity, and smooth surfaces are realized by using a convenient layer-by-layer growth method. Flexible photodetectors are fabricated, showing broadband photoresponse ranging from UV to short-wave infrared (370 to 1450 nm). The relatively long relaxation time of photocurrent, which arises from the trapping of photocarriers, renders the device's synaptic plasticity similar to that of biological synapses, promising its use in neuromorphic visual systems. This work demonstrates the great potential of Cu-HHHATN thin films in flexible optoelectronic devices for various applications.
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Affiliation(s)
- Jiajun Song
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung Hom, KowloonHong KongP. R. China
| | - Chun‐Ki Liu
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung Hom, KowloonHong KongP. R. China
| | - Venkatesh Piradi
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung Hom, KowloonHong KongP. R. China
- Department of ChemistryHong Kong Baptist UniversityKowloon Tong, KowloonHong KongP. R. China
| | - Changsheng Chen
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung Hom, KowloonHong KongP. R. China
| | - Ye Zhu
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung Hom, KowloonHong KongP. R. China
| | - Xunjin Zhu
- Department of ChemistryHong Kong Baptist UniversityKowloon Tong, KowloonHong KongP. R. China
| | - Li Li
- School of Fashion and TextilesThe Hong Kong Polytechnic UniversityHung Hom, KowloonHong KongP. R. China
| | - Wai‐Yeung Wong
- Department of Applied Biology and Chemical Technology and Research Institute for Smart EnergyThe Hong Kong Polytechnic UniversityHung Hom, KowloonHong KongP. R. China
- Research Institute of Intelligent Wearable SystemsThe Hong Kong Polytechnic UniversityHung Hom, KowloonHong KongP. R. China
| | - Feng Yan
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung Hom, KowloonHong KongP. R. China
- Research Institute of Intelligent Wearable SystemsThe Hong Kong Polytechnic UniversityHung Hom, KowloonHong KongP. R. China
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6
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Feng S, Duan H, Tan H, Hu F, Liu C, Wang Y, Li Z, Cai L, Cao Y, Wang C, Qi Z, Song L, Liu X, Sun Z, Yan W. Intrinsic room-temperature ferromagnetism in a two-dimensional semiconducting metal-organic framework. Nat Commun 2023; 14:7063. [PMID: 37923720 PMCID: PMC10624846 DOI: 10.1038/s41467-023-42844-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2022] [Accepted: 10/24/2023] [Indexed: 11/06/2023] Open
Abstract
The development of two-dimensional (2D) magnetic semiconductors with room-temperature ferromagnetism is a significant challenge in materials science and is important for the development of next-generation spintronic devices. Herein, we demonstrate that a 2D semiconducting antiferromagnetic Cu-MOF can be endowed with intrinsic room-temperature ferromagnetic coupling using a ligand cleavage strategy to regulate the inner magnetic interaction within the Cu dimers. Using the element-selective X-ray magnetic circular dichroism (XMCD) technique, we provide unambiguous evidence for intrinsic ferromagnetism. Exhaustive structural characterizations confirm that the change of magnetic coupling is caused by the increased distance between Cu atoms within a Cu dimer. Theoretical calculations reveal that the ferromagnetic coupling is enhanced with the increased Cu-Cu distance, which depresses the hybridization between 3d orbitals of nearest Cu atoms. Our work provides an effective avenue to design and fabricate MOF-based semiconducting room-temperature ferromagnetic materials and promotes their practical applications in next-generation spintronic devices.
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Affiliation(s)
- Sihua Feng
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Hengli Duan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China.
| | - Hao Tan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Fengchun Hu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Chaocheng Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Yao Wang
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Zhi Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Liang Cai
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Yuyang Cao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Chao Wang
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China.
| | - Zeming Qi
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Li Song
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Xuguang Liu
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Zhihu Sun
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Wensheng Yan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China.
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7
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Ding G, Zhao J, Zhou K, Zheng Q, Han ST, Peng X, Zhou Y. Porous crystalline materials for memories and neuromorphic computing systems. Chem Soc Rev 2023; 52:7071-7136. [PMID: 37755573 DOI: 10.1039/d3cs00259d] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/28/2023]
Abstract
Porous crystalline materials usually include metal-organic frameworks (MOFs), covalent organic frameworks (COFs), hydrogen-bonded organic frameworks (HOFs) and zeolites, which exhibit exceptional porosity and structural/composition designability, promoting the increasing attention in memory and neuromorphic computing systems in the last decade. From both the perspective of materials and devices, it is crucial to provide a comprehensive and timely summary of the applications of porous crystalline materials in memory and neuromorphic computing systems to guide future research endeavors. Moreover, the utilization of porous crystalline materials in electronics necessitates a shift from powder synthesis to high-quality film preparation to ensure high device performance. This review highlights the strategies for preparing porous crystalline materials films and discusses their advancements in memory and neuromorphic electronics. It also provides a detailed comparative analysis and presents the existing challenges and future research directions, which can attract the experts from various fields (e.g., materials scientists, chemists, and engineers) with the aim of promoting the applications of porous crystalline materials in memory and neuromorphic computing systems.
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Affiliation(s)
- Guanglong Ding
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - JiYu Zhao
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
- State Key Laboratory of Fine Chemicals, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - Qi Zheng
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Xiaojun Peng
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
- State Key Laboratory of Fine Chemicals, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
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8
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Gao S, Huang Y, Tan J, Xu J, Zhao L, Zhou W, Yang Z, Sun J, Gong H. Self-Powered Infrared Photodetectors with Ultra-High Speed and Detectivity Based on Amorphous Cu-Based MOF Films. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37384456 DOI: 10.1021/acsami.3c05121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/01/2023]
Abstract
Amorphous metal-organic frameworks (aMOFs) start to challenge their crystalline equivalents due to their unique advantages, like lack of grain boundaries, isotropy, flexibility, numerous defects-induced active sites, etc. However, aMOFs are typically synthesized under rigorous conditions, and their properties and applications need to be further explored. In this work, highly transparent p-type amorphous Cu-HHTP films consisting of Cu2+ and 2,3,6,7,10,11-hexahydroxytriphenylene (HHTP) were synthesized using a simple electrostatic spinning method and identified as p-a-Cu-HHTP. Besides, a p-a-Cu-HHTP/n-Si infrared photodetector (PD) operating on a self-powered basis with ultra-high speed (response time of 40 μs) and detectivity (1.2 × 1012 Jones) has been developed, with a response time and detectivity that are record values for a MOF-based photodetector. In particular, the p-a-Cu-HHTP/n-Si PD can withstand high temperatures up to 180 °C without property change. Moreover, a flexible metal-semiconductor-metal photodetector based on p-a-Cu-HHTP is constructed, which shows excellent mechanical stability and photoresponse that remain unchanged after bending 120 times, implying its suitability for wearable optoelectronics. The new method to fabricate aMOFs, the unique p-a-Cu-HHTP, and its PDs initiated in this work opens up a new avenue in organic-inorganic hybrid optoelectronics.
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Affiliation(s)
- Shuangyin Gao
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, P. R. China
| | - Yi Huang
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, P. R. China
| | - Jin Tan
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, P. R. China
| | - Jianmei Xu
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, P. R. China
| | - Ling Zhao
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, P. R. China
| | - Wei Zhou
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, P. R. China
| | - Zhihong Yang
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, P. R. China
| | - Jian Sun
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, P. R. China
| | - Hao Gong
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117543, Singapore
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9
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Lv J, Li W, Li J, Zhu Z, Dong A, Lv H, Li P, Wang B. A Triptycene-Based 2D MOF with Vertically Extended Structure for Improving the Electrocatalytic Performance of CO 2 to Methane. Angew Chem Int Ed Engl 2023; 62:e202217958. [PMID: 36692843 DOI: 10.1002/anie.202217958] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/06/2022] [Revised: 01/13/2023] [Accepted: 01/24/2023] [Indexed: 01/25/2023]
Abstract
Two-dimensional conductive metal-organic frameworks (2D-c-MOFs) have attracted extensive attention owing to their unique structures and physical-chemical properties. However, the planarly extended structure of 2D-c-MOFs usually limited the accessibility of the active sites. Herein, we designed a triptycene-based 2D vertically conductive MOF (2D-vc-MOF) by coordinating 2,3,6,7,14,15-hexahydroxyltriptycene (HHTC) with Cu2+ . The vertically extended 2D-vc-MOF(Cu) possesses a weak interlayer interaction, which leads to a facile exfoliation to the nanosheet. Compared with the classical 2D-c-MOFs with planarly extended 2D structures, 2D-vc-MOF(Cu) exhibits a 100 % increased catalytic activity in terms of turnover number and a two-fold increased selectivity. Density functional theory (DFT) calculations further revealed that higher activity originated from the lower energy barriers of the vertically extended 2D structures during the CO2 reduction reaction process.
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Affiliation(s)
- Jianning Lv
- Key Laboratory of Cluster Science Ministry of Education, Beijing Key Laboratory of Photoelectronic/Electrophotonic, Advanced Research Institute of Multidisciplinary Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, No. 5, South Street, Zhongguancun, Haidian District, Beijing, 100081, China
| | - Wenrui Li
- Key Laboratory of Cluster Science Ministry of Education, Beijing Key Laboratory of Photoelectronic/Electrophotonic, Advanced Research Institute of Multidisciplinary Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, No. 5, South Street, Zhongguancun, Haidian District, Beijing, 100081, China
| | - Jiani Li
- Key Laboratory of Cluster Science Ministry of Education, Beijing Key Laboratory of Photoelectronic/Electrophotonic, Advanced Research Institute of Multidisciplinary Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, No. 5, South Street, Zhongguancun, Haidian District, Beijing, 100081, China
| | - Zhejiaji Zhu
- Key Laboratory of Cluster Science Ministry of Education, Beijing Key Laboratory of Photoelectronic/Electrophotonic, Advanced Research Institute of Multidisciplinary Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, No. 5, South Street, Zhongguancun, Haidian District, Beijing, 100081, China
| | - Anwang Dong
- Key Laboratory of Cluster Science Ministry of Education, Beijing Key Laboratory of Photoelectronic/Electrophotonic, Advanced Research Institute of Multidisciplinary Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, No. 5, South Street, Zhongguancun, Haidian District, Beijing, 100081, China
| | - Huixia Lv
- Key Laboratory of Cluster Science Ministry of Education, Beijing Key Laboratory of Photoelectronic/Electrophotonic, Advanced Research Institute of Multidisciplinary Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, No. 5, South Street, Zhongguancun, Haidian District, Beijing, 100081, China
| | - Pengfei Li
- Key Laboratory of Cluster Science Ministry of Education, Beijing Key Laboratory of Photoelectronic/Electrophotonic, Advanced Research Institute of Multidisciplinary Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, No. 5, South Street, Zhongguancun, Haidian District, Beijing, 100081, China
| | - Bo Wang
- Key Laboratory of Cluster Science Ministry of Education, Beijing Key Laboratory of Photoelectronic/Electrophotonic, Advanced Research Institute of Multidisciplinary Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, No. 5, South Street, Zhongguancun, Haidian District, Beijing, 100081, China.,Advanced Technology Research Institute (Ji'nan), Beijing Institute of Technology, Ji'nan, Shandong, 250300, China
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10
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Jiang L, Huang H, Zhang C, Yuan Y, Wang X, Qiu L. One-Step Preparation of Semiconductor/Dielectric Bilayer Structures for the Simulation of Flexible Bionic Photonic Synapses. ACS APPLIED MATERIALS & INTERFACES 2023; 15:7227-7235. [PMID: 36700528 DOI: 10.1021/acsami.2c22223] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Flexible synaptic devices with information sensing, processing, and storage functions are indispensable in the development of wearable artificial intelligence electronic systems. Here, a semiconductor/dielectric bilayer structure was prepared by a one-step deposition method and used for the first time in a flexible biomimetic photonic synaptic transistor device. Specifically, poly(3-hexylthiophene)-block-poly(phenyl isocyanide) with pentafluorophenyl ester (P3HT-b-PPI(5F)) was prepared as the device active layer, where the P3HT segment served as a carrier transport channel and optical gate and the PPI(5F) segment was used for charge trapping. Various biomimetic synaptic behaviors, such as excitatory postsynaptic currents, paired-pulse facilitation, and short-term/long-term memory, were successfully simulated under green light stimulation. An ultra-low energy consumption of 1.82 fJ was achieved with a greatly reduced operating voltage. Further, the "Morse-code" optical decoding was simulated using the excellent synaptic plasticity of the device. In addition, flexible synaptic devices were prepared by a one-step deposition method and can be well-affixed to arbitrary substrates. This has promising applications in the field of wearable bionic electronics.
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Affiliation(s)
- Longlong Jiang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
| | - Hua Huang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
| | - Can Zhang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
| | - Ye Yuan
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
| | - Xiaohong Wang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei230009, China
| | - Longzhen Qiu
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei230009, China
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Yu C, He JH, Lu JM. Ion-in-Conjugation: A Promising Concept for Multifunctional Organic Semiconductors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2204023. [PMID: 36285771 DOI: 10.1002/smll.202204023] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2022] [Revised: 09/11/2022] [Indexed: 06/16/2023]
Abstract
Most organic semiconductors (OSCs) consist of conjugated skeletons with flexible peripheral chains. Their weak intermolecular interactions from dispersion and induction forces result in environmental susceptibilities and are unsuitable for many multifunctional applications where direct exposure to external environments is unavoidable, such as gas absorption, chemical sensing, and catalysis. To exploit the advantages of inorganic semiconductors in OSCs, ion-in-conjugation (IIC) materials are proposed. An IIC material refers to any conjugated material (molecules, polymers, and crystals) in Kekule's structural formula containing stoichiometric ionic states in its conjugated backbone in the electronic ground state. In this review, the definitions, structures, synthesis, properties, and applications of IIC materials are described briefly. Four types of IIC material, including zwitterionic conjugated molecules/polymers, conjugated ionic dyes, π-d conjugated molecules and polymers, and coordinatively doped polymers, are reported. Their applications in gas sensing, humidity sensing, resistive memory devices, and thermal/photo-/electro-catalysis are demonstrated. The challenges and opportunities for future research are also discussed. It is expected that this work will inspire the design of new organic electronic information materials.
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Affiliation(s)
- Chuang Yu
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Jing-Hui He
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Jian-Mei Lu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
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Li Y, Yin S, Du Y, Zhang H, Chen J, Wang Z, Wang S, Qin Q, Zhou M, Li L. Liquid-metal based flexible a-IZTO ultrathin films for electrical and optical applications. NANOSCALE 2022; 14:16797-16805. [PMID: 36346285 DOI: 10.1039/d2nr04535d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Amorphous indium zinc tin oxide (a-IZTO) is a kind of transparent conductive oxide (TCO), which can be used in transparent electrodes, transistors, and flexible devices. At present, a key limitation of a-IZTO is the costly vacuum manufacturing technology, and its commercial production is also restricted by the complex raw material preparation process. In this article, we report a liquid metal-based van der Waals (vdW) exfoliation technique by which a-IZTO films with several nanometres thickness are fabricated. The a-IZTO films fabricated in ambient air have a size on the centimeter scale and an optical transmittance of 99.64%; they are also large-area flexible oxide films. In order to illustrate the capabilities of this technology, we fabricated thin film transistors (TFTs) and photodetectors based on a-IZTO films. An a-IZTO thin film transistor (TFT) has an on/off ratio of 106. When the Vds is 5 V, the responsivity, detectivity and external quantum efficiency of an a-IZTO photodetector are 7.57 × 104 A W-1, 4.00 × 1015 Jones and 3.68 × 105%, respectively, exhibiting one of the top performances in this field.
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Affiliation(s)
- Ying Li
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China.
| | - Shiqi Yin
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China.
| | - Yuchen Du
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China.
| | - Hui Zhang
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China.
| | - Jiawang Chen
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China
| | - Zihan Wang
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China.
| | - Shaotian Wang
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China.
| | - Qinggang Qin
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China.
| | - Min Zhou
- College of Physical Science and Technology, Yangzhou University, Yangzhou 225002, P. R. China
| | - Liang Li
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China.
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China
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