A Novel Multi-Sulfur Source Collaborative Chemical Bath Deposition Technology Enables 8%-Efficiency Sb2 S3 Planar Solar Cells

Rapid Thermal-Driven Crystal Growth and Defect Suppression in Antimony Selenide Thin Film for Efficient Solar Cells

Antimony selenide (Sb2Se3) has demonstrated considerable potential and advancement as a light-absorbing material for thin-film solar cells owing to its exceptional optoelectronic characteristics. However, challenges persist in the crystal growth, particularly regarding the nucleation mechanism during pre-selenization process for Sb2Se3. The defects originating from this process significantly impact the quality of the absorber layer, leading to the degradation in the power conversion efficiency (PCE) of the device. Herein, the evolution of pre-selenization using rapid thermal processing (RTP) on the crystallization quality of Sb2Se3 film is systematically investigated. By optimizing the initial nucleation process during pre-selenization, resulting in a reduction of grain boundaries and nucleation centers, the Sb2Se3 thin films demonstrate enhanced crystallinity and pinholes-free morphology. It is found that the improved quality of the grain interior and interfaces of the Sb2Se3 absorber can mitigate intrinsic defects within the bulk layer, and passivate interfacial defect recombination. As a result, the short circuit current density (JSC) is elevated to 28.97 mA cm-2, and a competitive efficiency of 9.03% is achieved in Sb2Se3 device. This study provides comprehensive insight into the process of crystal growth and the mechanism for defect suppression, which holds guiding significance for advancing photovoltaic performance.

Enhanced Performance of Close-Spaced Sublimation Processed Antimony Sulfide Solar Cells via Seed-Mediated Growth

Antimony sulfide (Sb2S3) has attracted much attention due to its great prospect to construct highly efficient, cost-effective, and environment-friendly solar cells. The scalable close-spaced sublimation (CSS) is a well-developed physical deposition method to fabricate thin films for photovoltaics. However, the CSS-processed absorber films typically involve small grain size with high-density grain boundaries (GBs), resulting in severe defects-induced charge-carrier nonradiative recombination and further large open-circuit voltage (VOC) losses. In this work, it is demonstrated that a chemical bath deposited-Sb2S3 seed layer can serve as crystal nuclei and mediate the growth of large-grained, highly compact CSS-processed Sb2S3 films. This seed-mediated Sb2S3 film affords reduced defect density and enhanced charge-carrier transport, which yields an improved power conversion efficiency (PCE) of 4.78% for planar Sb2S3 solar cells. Moreover, the VOC of 0.755 V that is obtained is the highest reported thus far for vacuum-based evaporation and sublimation processed Sb2S3 devices. This work demonstrates an effective strategy to deposit high-quality low-defect-density Sb2S3 films via vacuum-based physical methods for optoelectronic applications.

Additive engineering for Sb2S3 indoor photovoltaics with efficiency exceeding 17

Indoor photovoltaics (IPVs) have attracted increasing attention for sustainably powering Internet of Things (IoT) electronics. Sb2S3 is a promising IPV candidate material with a bandgap of ~1.75 eV, which is near the optimal value for indoor energy harvesting. However, the performance of Sb2S3 solar cells is limited by nonradiative recombination, which is dependent on the quality of the absorber films. Additive engineering is an effective strategy to fine tune the properties of solution-processed films. This work shows that the addition of monoethanolamine (MEA) into the precursor solution allows the nucleation and growth of Sb2S3 films to be controlled, enabling the deposition of high-quality Sb2S3 absorbers with reduced grain boundary density, optimized band positions, and increased carrier concentration. Complemented with computations, it is revealed that the incorporation of MEA leads to a more efficient and energetically favorable deposition for enhanced heterogeneous nucleation on the substrate, which increases the grain size and accelerates the deposition rate of Sb2S3 films. Due to suppressed carrier recombination and improved charge-carrier transport in Sb2S3 absorber films, the MEA-modulated Sb2S3 solar cell yields a power conversion efficiency (PCE) of 7.22% under AM1.5 G illumination, and an IPV PCE of 17.55% under 1000 lux white light emitting diode (WLED) illumination, which is the highest yet reported for Sb2S3 IPVs. Furthermore, we construct high performance large-area Sb2S3 IPV minimodules to power IoT wireless sensors, and realize the long-term continuous recording of environmental parameters under WLED illumination in an office. This work highlights the great prospect of Sb2S3 photovoltaics for indoor energy harvesting.

Se-Elemental Concentration Gradient Regulation for Efficient Sb2(S,Se)3 Solar Cells With High Open-Circuit Voltages

Antimony selenosulfide (Sb2(S,Se)3), featuring large absorption coefficient, excellent crystal structure stability, benign non-toxic characteristic, outstanding humidity and ultraviolet tolerability, has recently attracted enormous attention and research interest regarding its photoelectric conversion properties. However, the open-circuit voltage (Voc) for Sb2(S,Se)3-based photovoltaic devices is relatively low, especially for the device with a high power conversion efficiency (η). Herein, an innovative Se-elemental concentration gradient regulation strategy has been exploited to produce high-quality Sb2(S,Se)3 films on TiO2/CdS substrates through a thioacetamide(TA)-synergistic dual-sulfur source hydrothermal-processed method. The Se-elemental gradient distribution produces a favorable energy band structure, which suppresses the energy level barriers for hole transport and enhances the driving force for electron transport in Sb2(S,Se)3 film. This facilitates efficient charge transport/separation of photogenerated carriers and boosts significantly the Voc of Sb2(S,Se)3 photovoltaic devices. The champion TA-Sb2(S,Se)3 planar heterojunction (PHJ) solar cell displays an considerable η of 9.28 % accompanied by an exciting Voc rising to 0.70 V that is currently the highest among Sb2(S,Se)3-based solar cells with efficiencies exceeding 9.0 %. This research is anticipated to contribute to the preparation of high-quality Sb2(S,Se)3 thin film and the achievement of efficient inorganic Sb2(S,Se)3 PHJ photovoltaic device.

Innovative In Situ Passivation Strategy for High-Efficiency Sb2(S,Se)3 Solar Cells

An effective defect passivation strategy is crucial for enhancing the performance of antimony selenosulfide (Sb2(S,Se)3) solar cells, as it significantly influences charge transport and extraction efficiency. Herein, a convenient and novel in situ passivation (ISP) technique is successfully introduced to enhance the performance of Sb2(S,Se)3 solar cells, achieving a champion efficiency of 10.81%, which is among the highest recorded for Sb2(S,Se)3 solar cells to date. The first principles calculations and the experimental data reveal that incorporating sodium selenosulfate in the ISP strategy effectively functions as an in situ selenization, effectively passivating deep-level cation antisite SbSe defect within the Sb2(S,Se)3 films and significantly suppressing non-radiative recombination in the devices. Space-charge-limited current (SCLC), photoluminescence (PL), and transient absorption spectroscopy (TAS) measurements verify the high quality of the passivated films, showing fewer traps and defects. Moreover, the ISP strategy improved the overall quality of the Sb2(S,Se)3 films, and fine-tuned the energy levels, thereby facilitating enhanced carrier transport. This study thus provides a straightforward and effective method for passivating deep-level defects in Sb2(S,Se)3 solar cells.

Heterogeneous Nucleation Regulation Amends Unfavorable Crystallization Orientation and Defect Features of Antimony Selenosulfide Film for High-Efficient Planar Solar Cells

Antimony selenosulfide (Sb2(S,Se)3) has obtained widespread concern for photovoltaic applications as a light absorber due to superior photoelectric features. Accordingly, various deposition technologies have been developed in recent years, especially hydrothermal deposition method, which has achieved a great success. However, device performances are limited with severe carrier recombination, relating to the quality of absorber and interfaces. Herein, bulk and interface defects are simultaneously suppressed by regulating heterogeneous nucleation kinetics with barium dibromide (BaBr2) introduction. In details, the Br adsorbs and dopes on the polar planes of cadmium sulfide (CdS) buffer layer, promoting the exposure of nonpolar planes of CdS, which facilitates the favorable growth of [hk1]-Sb2(S,Se)3 films possessing superior crystallinity and small interface defects. Additionally, the Se/S ratio is increased due to the replacement of Se by Br, causing a downshift of the Fermi levels with a benign band alignment and a shallow-level defect. Moreover, Ba2+ is located at grain boundaries by coordination with S and Se ions, passivating grain boundary defects. Consequently, the efficiency is increased from 7.70 % to 10.12 %. This work opens an avenue towards regulating the heterogeneous nucleation kinetics of Sb2(S,Se)3 film deposited via hydrothermal deposition approach to optimize its crystalline orientation and defect features.

Temperature-Gradient Solution Deposition Amends Unfavorable Band Structure of Sb2(S,Se)3 Film for Highly Efficient Solar Cells

Band structure of a semiconducting film critically determines the charge separation and transport efficiency. In antimony selenosulfide (Sb2(S,Se)3) solar cells, the hydrothermal method has achieved control of band gap width of Sb2(S,Se)3 thin film through tuning the atomic ratio of S/Se, resulting in an efficiency breakthrough towards 10 %. However, the obtained band structure exhibits an unfavorable gradient distribution in terms of carrier transport, which seriously impedes the device efficiency improvement. To solve this problem, here we develop a strategy by intentionally regulating hydrothermal temperature to control the chemical reaction kinetics between S and Se sources with Sb source. This approach enables the control over vertical distribution of S/Se atomic ratio in Sb2(S,Se)3 films, forming a favorable band structure which is conducive to carrier transport. Meanwhile, the adjusted element distribution not only ensures the uniformity of grain structure, but also increases the Se content of the films and suppress sulfur vacancy defects. Ultimately, the device delivers a high efficiency of 10.55 %, which is among the highest reported efficiency of Sb2(S,Se)3 solar cells. This study provides an effective strategy towards manipulating the element distribution in mixed-anion compound films prepared by solution-based method to optimize their optical and electrical properties.

Additive-Assisted Hydrothermal Growth Enabling Defect Passivation and Void Remedy in Antimony Selenosulfide Solar Cells

Antimony selenosulfide (Sb2(S,Se)3) has recently emerged as a promising light-absorbing material, attributed to its tunable photovoltaic properties, low toxicity, and robust environmental stability. However, despite these advantages, the current record efficiency for Sb2(S,Se)3 solar cells significantly lags behind their Shockley-Queisser limit, especially when compared to other well-established chalcogenide-based thin-film solar cells, such as CdTe and Cu(In,Ga)Se2. This underperformance primarily arises from the formation of unfavorable defects, predominately located at deep energy levels, which act as recombination centers, thereby limiting the potential for performance enhancement in Sb2(S,Se)3 solar cells. Specifically, deep-level defects, such as sulfur vacancy (VS), have a lower formation energy, leading to severe non-radiative recombination and compromising device performance. To address this challenge, thioacetamide (TA), a sulfur-containing additive is introduced, into the precursor solution for the hydrothermal deposition of Sb2(S,Se)3. This results indicate that the incorporation of TA helps in passivating deep-level defects such as sulfur vacancies and in suppressing the formation of large voids within the Sb2(S,Se)3 absorber. Consequently, Sb2(S,Se)3 solar cells, with reduced carrier recombination and improved film quality, achieved a power conversion efficiency of 9.04%, with notable improvements in open-circuit voltage and fill factor. This work provides deeper insights into the passivation of deep-level donor-like VS defects through the incorporation of a sulfur-containing additive, highlighting pathways to enhance the photovoltaic performance of Sb2(S,Se)3 solar cells.

Designing Atomic Interface in Sb2S3/CdS Heterojunction for Efficient Solar Water Splitting

In the emerging Sb2S3-based solar energy conversion devices, a CdS buffer layer prepared by chemical bath deposition is commonly used to improve the separation of photogenerated electron-hole pairs. However, the cation diffusion at the Sb2S3/CdS interface induces detrimental defects but is often overlooked. Designing a stable interface in the Sb2S3/CdS heterojunction is essential to achieve high solar energy conversion efficiency. As a proof of concept, this study reports that the modification of the Sb2S3/CdS heterojunction with an ultrathin Al2O3 interlayer effectively suppresses the interfacial defects by preventing the diffusion of Cd2+ cations into the Sb2S3 layer. As a result, a water-splitting photocathode based on Ag:Sb2S3/Al2O3/CdS heterojunction achieves a significantly improved half-cell solar-to-hydrogen efficiency of 2.78% in a neutral electrolyte, as compared to 1.66% for the control Ag:Sb2S3/CdS device. This work demonstrates the importance of designing atomic interfaces and may provide a guideline for the fabrication of high-performance stibnite-type semiconductor-based solar energy conversion devices.

Modulating the Structure and Optoelectronic Properties of Solution-Processed Bismuth-Based Nanocrystals

Bismuth-based chalcogenides have emerged as promising candidates for next-generation, solution-processable semiconductors, mainly benefiting from their facile fabrication, low cost, excellent stability, and tunable optoelectronic properties. Particularly, the recently developed AgBiS2 solar cells have shown striking power conversion efficiencies. High performance bismuth-based photodetectors have also been extensively studied in the past few years. However, the fundamental properties of these Bi-based semiconductors have not been sufficiently investigated, which is crucial for further improving the device performance. Here, we introduce multiple time-resolved and steady-state techniques to fully characterize the charge carrier dynamics and charge transport of solution-processed Bi-based nanocrystals. It was found that the Ag-Bi ratio plays a critical role in charge transport. For Ag-deficient samples, silver bismuth sulfide thin films behave as localized state induced hopping charge transport, and the Ag-excess samples present band-like charge transport. This finding is crucial for developing more efficient Bi-based semiconductors and optoelectronic devices.

Fluorene- and fluorenone-based molecules as electron-transporting SAMs for photovoltaic devices

New semiconductors containing fluorene or fluorenone central fragments along with phosphonic acid anchoring groups were synthesized and investigated as electron transporting materials for possible application in photovoltaic devices. These derivatives demonstrate good thermal stability and suitable electrochemical properties for effective electron transport from perovskite, Sb2S3 and Sb2Se3 absorber layers. Self-assembled fluorene and fluorenone electron-transporting materials have shown improved substrate wettability, indicating bond formation between monolayer-forming compounds and the ITO, TiO2, Sb2S3, or Sb2Se3 surface. Additionally, investigated materials have compatible energetic band alignment and can passivate perovskite interface defects, which makes them interesting candidates for application in the n-i-p structure perovskite solar cell.

Advanced Synthesis and Characterization of CdO/CdS/ZnO Heterostructures for Solar Energy Applications

This study introduces an innovative method for synthesizing Cadmium Oxide /Cadmium Sulfide/Zinc Oxide heterostructures (CdO/CdS/ZnO), emphasizing their potential application in solar energy. Utilizing a combination of electrochemical deposition and oxygen annealing, the research provides a thorough analysis of the heterostructures through scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, and photoluminescence (PL) spectroscopy. The findings reveal a complex surface morphology and a composite structure with significant contributions from hexagonal CdS and cubic CdO phases. The study highlights the uniformity in the distribution of luminescent centers and the crystalline quality of the heterostructures, which is evident from the PL analysis. The redshift observed in the emission peak and the additional peaks in the excitation spectrum indicate intricate optical properties influenced by various factors, including quantum confinement and lattice strain. The research demonstrates these heterostructures' potential in enhancing solar cells' efficiency and applicability in optoelectronic devices. This comprehensive characterization and analysis pave the way for future optimization and application in efficient and sustainable solar energy solutions.

Precursor Engineering of Solution-Processed Sb2 S3 Solar Cells

Antimony-based chalcogenides have emerged as promising candidates for next-generation thin film photovoltaics. Particularly, binary Sb2 S3 thin films have exhibited great potential for optoelectronic applications, due to the facile and low-cost fabrication, simple composition, decent charge transport and superior stability. However, most of the reported efficient Sb2 S3 solar cells are realized based on chemical bath deposition and hydrothermal methods, which require large amount of solution and are normally very time-consuming. In this work, Ag ions are introduced within the Sb2 S3 sol-gel precursors, and effectively modulated the crystallization and charge transport properties of Sb2 S3 . The crystallinity of the Sb2 S3 crystal grains are enhanced and the charge carrier mobility is increased, which resulted improved charge collection efficiency and reduced charge recombination losses, reflected by the greatly improved fill factor and open-circuit voltage of the Ag incorporated Sb2 S3 solar cells. The champion devices reached a record high power conversion efficiency of 7.73% (with antireflection coating), which is comparable with the best photovoltaic performance of Sb2 S3 solar cells achieved based on chemical bath deposition and hydrothermal techniques, and pave the great avenue for next-generation solution-processed photovoltaics.

All-Inorganic Hydrothermally Processed Semitransparent Sb2S3 Solar Cells with CuSCN as the Hole Transport Layer

An inorganic wide-bandgap hole transport layer (HTL), copper(I) thiocyanate (CuSCN), is employed in inorganic planar hydrothermally deposited Sb2S3 solar cells. With excellent hole transport properties and uniform compact morphology, the solution-processed CuSCN layer suppresses the leakage current and improves charge selectivity in an n-i-p-type solar cell structure. The device without the HTL (FTO/CdS/Sb2S3/Au) delivers a modest power conversion efficiency (PCE) of 1.54%, which increases to 2.46% with the introduction of CuSCN (FTO/CdS/Sb2S3/CuSCN/Au). This PCE is a significant improvement compared with the previous reports of planar Sb2S3 solar cells employing CuSCN. CuSCN is therefore a promising alternative to expensive and inherently unstable organic HTLs. In addition, CuSCN makes an excellent optically transparent (with average transmittance >90% in the visible region) and shunt-blocking HTL layer in pinhole-prone ultrathin (<100 nm) semitransparent absorber layers grown by green and facile hydrothermal deposition. A semitransparent device is fabricated using an ultrathin Au layer (∼10 nm) with a PCE of 2.13% and an average visible transmittance of 13.7%.

Solution-Processed Sb2S3-Based Heterojunction for Self-Powered Broad Band Weak Light Detection

Antimony sulfide (Sb2S3) has recently regained the attention of photovoltaic researchers as a promising solar absorber; however, its application for the detection of white light remains relatively unexplored. Herein, we report on the self-powered heterojunction photodetector based on a device-grade Sb2S3 film made at low temperature with solution processing. The Sb2S3 absorber film was prepared by single-step spin coating of a novel precursor ink using antimony trichloride as the antimony source along with the low melting thioacetamide as the sulfur source in 2-methoxyethanol, a low boiling environmentally friendly solvent. A simple TiO2/Sb2S3 heterojunction device made by using the film shows a power conversion efficiency of 1.22% without any hole transporting layer. Interestingly, the self-powered photodetector performance of the device under white light exhibits a high on/off ratio of 2.2 × 104 under 1 sun illumination. Moreover, this optical filter-free ultraviolet-visible absorbing near-infrared blind photodetector is equally capable of detecting both strong and weak white light, with a response time of 98 ms. Further, an example of the real-life application of the device is successfully demonstrated by constructing a weak light-detecting sunlight tracking system.

Critical Review on Crystal Orientation Engineering of Antimony Chalcogenide Thin Film for Solar Cell Applications

The emerging antimony chalcogenide (Sb2 (Sx Se1-x )3 , 0 ≤ x ≤ 1) semiconductors are featured as quasi-1D structures comprising (Sb4 S(e)6 )n ribbons, this structural characteristic generates facet-dependent properties such as directional charge transfer and trap states. In terms of carrier transport, proper control over the crystal nucleation and growth conditions can promote preferentially oriented growth of favorable crystal planes, thus enabling efficient electron transport along (Sb4 S(e)6 )n ribbons. Furthermore, an in-depth understanding of the origin and impact of the crystal orientation of Sb2 (Sx Se1-x )3 films on the performance of corresponding photovoltaic devices is expected to lead to a breakthrough in power conversion efficiency. In fact, there are many studies on the orientation control of Sb2 (Sx Se1-x )3 colloidal nanomaterials. However, the synthesis of Sb2 (Sx Se1-x )3 thin films with controlled facets has recently been a focus in optoelectronic device applications. This work summarizes methodologies that are applied in the fabrication of preferentially oriented Sb2 (Sx Se1-x )3 films, including treatment strategies developed for crystal orientation engineering in each process. The mechanisms in the orientation control are thoroughly analyzed. An outlook on perspectives for the future development of Sb2 (Sx Se1-x )3 solar cells based on recent research and issues on orientation control is finally provided.

Grain Engineering of Sb2 S3 Thin Films to Enable Efficient Planar Solar Cells with High Open-Circuit Voltage

Sb2 S3 is a promising environmentally friendly semiconductor for high performance solar cells. But, like many other polycrystalline materials, Sb2 S3 is limited by nonradiative recombination and carrier scattering by grain boundaries (GBs). This work shows how the GB density in Sb2 S3 films can be significantly reduced from 1068 ± 40 to 327 ± 23 nm µm-2 by incorporating an appropriate amount of Ce3+ into the precursor solution for Sb2 S3 deposition. Through extensive characterization of structural, morphological, and optoelectronic properties, complemented with computations, it is revealed that a critical factor is the formation of an ultrathin Ce2 S3 layer at the CdS/Sb2 S3 interface, which can reduce the interfacial energy and increase the adhesion work between Sb2 S3 and the substrate to encourage heterogeneous nucleation of Sb2 S3 , as well as promote lateral grain growth. Through reductions in nonradiative recombination at GBs and/or the CdS/Sb2 S3 heterointerface, as well as improved charge-carrier transport properties at the heterojunction, this work achieves high performance Sb2 S3 solar cells with a power conversion efficiency reaching 7.66%. An impressive open-circuit voltage (VOC ) of 796 mV is achieved, which is the highest reported thus far for Sb2 S3 solar cells. This work provides a strategy to simultaneously regulate the nucleation and growth of Sb2 S3 absorber films for enhanced device performance.

Parallel Planar Heterojunction Strategy Enables Sb2 S3 Solar Cells with Efficiency Exceeding 8

Solution-processed solar cells based on inorganic heterojunctions provide a potential approach to the efficient, stable and low-cost solar cells required for the terrestrial generation of photovoltaic energy. Antimony trisulfide (Sb2 S3 ) is a promising photovoltaic absorber. Here, an easily solution-processed parallel planar heterojunction (PPHJ) strategy and related principle are developed to prepare efficient multiple planar heterojunction (PHJ) solar cells, and the PPHJ strategy boosts the efficiency of solution-processed Sb2 S3 solar cells up to 8.32 % that is the highest amongst Sb2 S3 devices. The Sb2 S3 -based PPHJ device consists of two kinds of conventional planar heterojunction (PHJ) subcells in a parallel connection: Sb2 S3 -based PHJ subcells dominating the absorption and charge generation and CH3 NH3 PbI3 -based PHJ subcells governing the electron transport towards collection electrode, but it belongs to an Sb2 S3 device in nature. The resulting PPHJ device combines together the distinctive structural features of Sb2 S3 absorbing layer as a main absorber and the duplexity of well-crystallized/oriented CH3 NH3 PbI3 layer in charge transportation as an additional absorber, while the presence of perovskite does not affect device stability. The PPHJ strategy maintains the facile preparation by the conventional sequential depositions of multiple layers, but eliminates the normal complexity in both tandem and parallel tandem PHJ systems.

Blocking recombination centers by controlling the charge density of a sulfur vacancy in antimony trisulfide

By performing nonadiabatic molecular dynamics combined with ab initio time-domain density functional theory, we have explored the effects of the charge density of a sulfur vacancy on charge trapping and recombination in antimony trisulfide (Sb2S3). The simulations demonstrate that, compared to an antimony vacancy, the sulfur vacancy generates a high charge density trap state within the band gap. This state acts as the recombination center and provides new channels for charge carrier relaxation. Filling the sulfur vacancy with electron donors elevates the defect state to the Fermi level due to the introduced extra electrons. In contrast, the electron acceptor lowers the charge density of the sulfur vacancy by capturing its local electrons, eliminating the charge recombination center and extending the photo-generated charge carrier lifetime. Additionally, compared with electron injection, hole injection can also decrease the charge density of the trap state via neutralizing its local electronic states, eliminate the trap state within the band gap, and suppress nonradiative electron-hole recombination. This study is expected to shed new light on the blocking recombination centers and provide valuable insights into the design of high-performance solar cells.

Gate-controlled Sb2S3 thin film photodetectors for logic switches

Antimony sulfide (Sb2S3) photodetectors (PDs) have great potential in commercial applications. The performances are affected by photocarrier distribution and recombination. Here, the gate-controlled Sb2S3 thin film PD is fabricated on the TiO2/SiO2/Si substrate by the vacuum method. The p-channel Sb2S3 transistor obtained a threshold voltage of 0.6 V and a switching ratio of 1064, achieving an effective regulation by gate voltages. A negative gate voltage can enhance conductivity and can suppress recombination. The responsivity and detectivity of the PD reach 1.6 A/W and 1.2 × 1011 Jones, respectively. The device realizes logic outputs by the signal inputs of illumination and gate voltage.

Sputtering of Molybdenum as a Promising Back Electrode Candidate for Superstrate Structured Sb2 S3 Solar Cells

Sb2 S3 is rapidly developed as light absorber material for solar cells due to its excellent photoelectric properties. However, the use of the organic hole transport layer of Spiro-OMeTAD and gold (Au) in Sb2 S3 solar cells imposes serious problems in stability and cost. In this work, low-cost molybdenum (Mo) prepared by magnetron sputtering is demonstrated to serve as a back electrode in superstrate structured Sb2 S3 solar cells for the first time. And a multifunctional layer of Se is inserted between Sb2 S3 /Mo interface by evaporation, which plays vital roles as: i) soft loading of high-energy Mo particles with the help of cottonlike-Se layer; ii) formation of surficial Sb2 Se3 on Sb2 S3 layer, and then reducing hole transportation barrier. To further alleviate the roll-over effect, a pre-selenide Mo target and consequentially form a MoSe2 is skillfully sputtered, which is expected to manipulate the band alignment and render an enhanced holes extraction. Impressively, the device with an optimized Mo electrode achieves an efficiency of 5.1%, which is one of the highest values among non-noble metal electrode based Sb2 S3 solar cells. This work sheds light on the potential development of low-cost metal electrodes for superstrate Sb2 S3 devices by carefully designing the back contact interface.

Sb2S3 Thin-Film Solar Cells Fabricated from an Antimony Ethyl Xanthate Based Precursor in Air

The rapidly expanding demand for photovoltaics (PVs) requires stable, quick, and easy to manufacture solar cells based on socioeconomically and ecologically viable earth-abundant resources. Sb2S3 has been a potential candidate for solar PVs and the efficiency of planar Sb2S3 thin-film solar cells has witnessed a reasonable rise from 5.77% in 2014 to 8% in 2022. Herein, the aim is to bring new insight into Sb2S3 solar cell research by investigating how the bulk and surface properties of the Sb2S3 absorber and the current-voltage and deep-level defect characteristics of solar cells based on these films are affected by the ultrasonic spray pyrolysis deposition temperature and the molar ratio of thiourea to SbEX in solution. The properties of the Sb2S3 absorber are characterized by bulk- and surface-sensitive methods. Solar cells are characterized by temperature-dependent current-voltage, external quantum efficiency, and deep-level transient spectroscopy measurements. In this paper, the first thin-film solar cells based on a planar Sb2S3 absorber grown from antimony ethyl xanthate (SbEX) by ultrasonic spray pyrolysis in air are demonstrated. Devices based on the Sb2S3 absorber grown at 200 °C, especially from a solution of thiourea and SbEX in a molar ratio of 4.5, perform the best by virtue of suppressed surface oxidation of Sb2S3, favorable band alignment, Sb-vacancy concentration, a continuous film morphology, and a suitable film thickness of 75 nm, achieving up to 4.1% power conversion efficiency, which is the best efficiency to date for planar Sb2S3 solar cells grown from xanthate-based precursors. Our findings highlight the importance of developing synthesis conditions to achieve the best solar cell device performance for an Sb2S3 absorber layer pertaining to the chosen deposition method, experimental setup, and precursors.

4.9% Efficient Sb2S3 Solar Cells from Semitransparent Absorbers with Fluorene-Based Thiophene-Terminated Hole Conductors

Fluorene-based hole transport materials (HTMs) with terminating thiophene units are explored, for the first time, for antimony sulfide (Sb₂S₃) solar cells. These HTMs possess largely simplified synthesis processes and high yields compared to the conventional expensive hole conductors making them reasonably economical. The thiophene unit-linked HTMs have been successfully demonstrated in ultrasonic spray-deposited Sb₂S₃ solar cells resulting in efficiencies in the range of 4.7-4.9% with an average visible transmittance (AVT) of 30-33% (400-800 nm) for the cell stack without metal contact, while the cells fabricated using conventional P3HT have yielded an efficiency of 4.7% with an AVT of 26%. The study puts forward cost-effective and transparent HTMs that avoid a post-coating activation at elevated temperatures like P3HT, devoid of parasitic absorption losses in the visible region and are demonstrated to be well aligned for the band edges of Sb₂S₃ thereby ascertaining their suitability for Sb₂S₃ solar cells and are potential candidates for semitransparent applications.

Mechanistic Study of the Transition from Antimony Oxide to Antimony Sulfide in the Hydrothermal Process to Obtain Highly Efficient Solar Cells

Obtaining high-quality absorber layers is a major task for constructing efficient thin-film solar cells. Hydrothermal deposition is considered a promising method for preparing high-quality antimony sulfide (Sb₂ S₃ ) films for solar cell applications. In the hydrothermal process, the precursor reactants play an important role in controlling the film formation process and thus the film quality. In this study, Sb₂ O₃ is applied as a new Sb source to replace the traditional antimony potassium tartrate to modulate the growth process of the Sb₂ S₃ film. The reaction mechanism of the transition from Sb₂ O₃ to Sb₂ S₃ in the hydrothermal process is revealed. Through controlling the nucleation and deposition processes, high-quality Sb₂ S₃ films are prepared with longer carrier lifetimes and lower deep-level defect densities than those prepared from the traditional Sb source of antimony potassium tartrate. Consequently, a solar cell device based on this improved Sb₂ S₃ delivers a high power conversion efficiency of 6.51 %, which is in the top tier for Sb₂ S₃ -based solar devices using hydrothermal methods. This research provides a new and competitive Sb source for hydrothermal growth of high-quality antimony chalcogenide films for solar cell applications.

Efficient In Situ Sulfuration Process in Hydrothermally Deposited Sb2S3 Absorber Layers

Sulfuration plays a decisive role in enhancing crystal growth and passivate defects in the fabrication of high-efficiency metal-sulfide solar cells. However, the traditional sulfuration process always suffers from high-price professional equipment, tedious processes, low activity of S, or high toxicity of H₂S. Here, we develop a desired in situ sulfuration by introducing tartaric acid additive into the hydrothermal deposition process of Sb₂S₃. Tartaric acid, sodium thiosulfate, and potassium antimony tartaric can form Sb₂S_x-contained (x > 3) as-prepared films. Encouragingly, the annealing becomes an inspiring in situ sulfuration process, which can obtain a more compact absorber layer. In addition, the crystallinity and defect property of the Sb₂S₃ film are also improved significantly. Finally, we achieve a high-performance Sb₂S₃ solar cell with a power conversion efficiency of 6.31%, which shows an encouraging enhancement of ∼15% compared with the traditional hydrothermal process. This study provides an innovative way to prepare high-efficiency Sb₂S₃ solar cells and provides a desirable guide to realize the in situ sulfuration process.