Ferrielectricity in the Archetypal Antiferroelectric, PbZrO3

Mimicking Antiferroelectrics with Ferroelectric Superlattices

Antiferroelectric oxides are promising materials for applications in high-density energy storage, solid-state cooling, and negative capacitance devices. However, the range of oxide antiferroelectrics available today is rather limited. In this work, it is demonstrated that antiferroelectric properties can be electrostatically engineered in artificially layered ferroelectric superlattices. Using a combination of synchrotron X-ray nanodiffraction, scanning transmission electron microscopy, macroscopic electrical measurements, and lateral and vertical piezoresponse force microscopy in parallel-plate capacitor geometry, a highly reversible field-induced transition is observed from a stable in-plane polarized state to a state with in-plane and out-of-plane polarized nanodomains that mimics, at the domain level, the nonpolar to polar transition of traditional antiferroelectrics, with corresponding polarization-voltage double hysteresis and comparable energy storage capacity. Furthermore, it is found that such superlattices exhibit large out-of-plane dielectric responses without involving flux-closure domain dynamics. These results demonstrate that electrostatic and strain engineering in artificially layered materials offers a promising route for the creation of synthetic antiferroelectrics.

A Roadmap for Ferroelectric-Antiferroelectric Phase Transition

Antiferroelectric materials have shown great potential in electronic devices benefiting from the reversible phase transition between ferroelectric and antiferroelectric phases. Understanding the dipole arrangements and clear phase transition pathways is crucial for design of antiferroelectric materials-based energy storage and conversion devices. However, the specific phase transition details remain largely unclear and even controversial to date. Here, we have grown a series of PbZrO3 on SrTiO3 substrates and elucidated the fine atom structures and phase transition pathways using atomic-resolution transmission electron microscopy. Specifically, a roadmap for ferroelectric to antiferroelectric phase transitions, here with increasing film thickness, is determined as ferroelectric rhombohedral (R3c)-ferroelectric monoclinic (Pc)-ferrielectric orthorhombic (Ima2)-antiferroelectric orthorhombic (Pbam), where Pc and Ima2 phases act as structural bridges. Moreover, the phase transition pathway is strongly related to the synergistic effect of oxygen octahedral tilting and cation displacement. These findings provide an insightful understanding for the theories and related properties of antiferroelectrics.

Visible-Photo-Assisted Phase Switching of Antiferroelectric-to-Ferroelectric Orders in an I3 --Intercalated 2D Perovskite

Antiferroelectric (AFE) has emerged as a promising branch of electroactive materials, due to intriguing physical attributes stemming from the electric field-induced antipolar-to-polar phase transformation. However, the requirement of extremely high electric field strength to switch adjacent sublattice polarization poses great challenges for exploiting new molecular AFE system. Although photoirradiation is striking as a noncontact and nondestructive manipulation tool to optimize physical properties, optical control of antiferroelectricity still remains unexplored. Here, by adopting light-sensitive I3 - anion into 2D perovskite family, we design a new I3 --intercalated molecular AFE of (t-ACH)2EA2Pb3I10(I3)0.5 ⋅ ((H3O)(H2O))0.5 (1, t-ACH=trans-4-aminomethyl-1-cyclohexanecarboxylate, EA=ethylammonium). The I3 --intercalating gives an ultra-narrow band gap of 1.65 eV with strong absorption. In term of AFE structure, the anti-parallel alignment of electric dipoles results in a large spontaneous polarization of 4.3 μC/cm2. Strikingly, 1 merely shows AFE behaviour in the dark even under ultrahigh voltage, while the field-induced ferroelectric state can be facilely obtained upon visible illumination. Such unprecedented visible-photo-assisted phase switching ascribes to the incorporation of photoactive I3 - anions that reduces AFE-to-ferroelectric switching barrier. This pioneering work on the photo-assisting transformation of ferroic orders paves a way to develop future photoactive materials with potential applications.

Ultrahigh electromechanical response from competing ferroic orders

Materials with electromechanical coupling are essential for transducers and acoustic devices as reversible converters between mechanical and electrical energy1-6. High electromechanical responses are typically found in materials with strong structural instabilities, conventionally achieved by two strategies-morphotropic phase boundaries7 and nanoscale structural heterogeneity8. Here we demonstrate a different strategy to accomplish ultrahigh electromechanical response by inducing extreme structural instability from competing antiferroelectric and ferroelectric orders. Guided by the phase diagram and theoretical calculations, we designed the coexistence of antiferroelectric orthorhombic and ferroelectric rhombohedral phases in sodium niobate thin films. These films show effective piezoelectric coefficients above 5,000 pm V-1 because of electric-field-induced antiferroelectric-ferroelectric phase transitions. Our results provide a general approach to design and exploit antiferroelectric materials for electromechanical devices.

Clamping enables enhanced electromechanical responses in antiferroelectric thin films

Thin-film materials with large electromechanical responses are fundamental enablers of next-generation micro-/nano-electromechanical applications. Conventional electromechanical materials (for example, ferroelectrics and relaxors), however, exhibit severely degraded responses when scaled down to submicrometre-thick films due to substrate constraints (clamping). This limitation is overcome, and substantial electromechanical responses in antiferroelectric thin films are achieved through an unconventional coupling of the field-induced antiferroelectric-to-ferroelectric phase transition and the substrate constraints. A detilting of the oxygen octahedra and lattice-volume expansion in all dimensions are observed commensurate with the phase transition using operando electron microscopy, such that the in-plane clamping further enhances the out-of-plane expansion, as rationalized using first-principles calculations. In turn, a non-traditional thickness scaling is realized wherein an electromechanical strain (1.7%) is produced from a model antiferroelectric PbZrO3 film that is just 100 nm thick. The high performance and understanding of the mechanism provide a promising pathway to develop high-performance micro-/nano-electromechanical systems.

Remarkable flexibility in freestanding single-crystalline antiferroelectric PbZrO3 membranes

The ultrahigh flexibility and elasticity achieved in freestanding single-crystalline ferroelectric oxide membranes have attracted much attention recently. However, for antiferroelectric oxides, the flexibility limit and fundamental mechanism in their freestanding membranes are still not explored clearly. Here, we successfully fabricate freestanding single-crystalline PbZrO3 membranes by a water-soluble sacrificial layer technique. They exhibit good antiferroelectricity and have a commensurate/incommensurate modulated microstructure. Moreover, they also have good shape recoverability when bending with a small radius of curvature (about 2.4 μm for the thickness of 120 nm), corresponding to a bending strain of 2.5%. They could tolerate a maximum bending strain as large as 3.5%, far beyond their bulk counterpart. Our atomistic simulations reveal that this remarkable flexibility originates from the antiferroelectric-ferroelectric phase transition with the aid of polarization rotation. This study not only suggests the mechanism of antiferroelectric oxides to achieve high flexibility but also paves the way for potential applications in flexible electronics.

Room-temperature stabilizing strongly competing ferrielectric and antiferroelectric phases in PbZrO3 by strain-mediated phase separation

PbZrO3 has been broadly considered as a prototypical antiferroelectric material for high-power energy storage. A recent theoretical study suggests that the ground state of PbZrO3 is threefold-modulated ferrielectric, which challenges the generally accepted antiferroelectric configuration. However, such a novel ferrielectric phase was predicted only to be accessible at low temperatures. Here, we successfully achieve the room-temperature construction of the strongly competing ferrielectric and antiferroelectric state by strain-mediated phase separation in PbZrO3/SrTiO3 thin film. We demonstrate that the phase separation occurs spontaneously in quasi-periodic stripe-like patterns under a compressive misfit strain and can be tailored by varying the film thickness. The ferrielectric phase strikingly exhibitsa threefold modulation period with a nearly up-up-down configuration, which could be stabilized and manipulated by the formation and evolution of interfacial defects under applied strain. The present results construct a fertile ground for further exploring the physical properties and applications based on the novel ferrielectric phase.

Translational Antiphase Boundaries in NaNbO3 Antiferroelectrics

Planar defects are known to be of importance in affecting the functional properties of materials. Translational antiphase boundaries (APBs) in particular have attracted considerable attention in perovskite oxides, but little is known in lead-free antiferroelectric oxides that are promising candidates for energy storage applications. Here, we present a study of translational APBs in prototypical antiferroelectric NaNbO3 using aberration-corrected (scanning) transmission electron microscopy (TEM) techniques at different length scales. The translational APBs in NaNbO3 are characterized by a 2-fold-modulated structure, which is antipolar in nature and exhibits a high density, different from the polar nature and lower density in PbZrO3. The high stability of translational APBs against external electric fields and elevated temperatures was revealed using ex situ and in situ TEM experiments and is expected to be associated with their antipolar nature. Density functional theory calculations demonstrate that translational APBs possess only slightly higher free energy than the antiferroelectric and ferroelectric phase energies with differences of 29 and 33 meV/f.u., respectively, justifying their coexistence down to the nanoscale at room temperature. These results provide a detailed atomistic elucidation of translational APBs in NaNbO3 with antipolar character and stability against external stimuli, establishing the basis of defect engineering of antiferroelectrics for energy storage devices.