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Li R, Huang Y, Zhu Y, Guo M, Peng W, Zhi Y, Wang L, Cao J, Lee S. Enhancing Oxygen Activation Ability by Composite Interface Construction over a 2D Co 3O 4-Based Monolithic Catalyst for Toluene Oxidation. ENVIRONMENTAL SCIENCE & TECHNOLOGY 2024; 58:14906-14917. [PMID: 39104092 DOI: 10.1021/acs.est.4c04157] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/07/2024]
Abstract
Developing robust metal-based monolithic catalysts with efficient oxygen activation capacity is crucial for thermal catalytic treatment of volatile organic compound (VOC) pollution. Two-dimensional (2D) metal oxides are alternative thermal catalysts, but their traditional loading strategies on carriers still face challenges in practical applications. Herein, we propose a novel in situ molten salt-loading strategy that synchronously enables the construction of 2D Co3O4 and its growth on Fe foam for the first time to yield a unique monolithic catalyst named Co3O4/Fe-S. Compared to the Co3O4 nanocube-loaded Fe foam, Co3O4/Fe-S exhibits a significantly improved catalytic performance with a temperature reduction of 44 °C at 90% toluene conversion. Aberration-corrected scanning transmission electron microscopy and theoretical calculation suggest that Co3O4/Fe-S possesses abundant 2D Co3O4/Fe3O4 composite interfaces, which promote the construction of active sites (oxygen vacancy and Co3+) to boost oxygen activation and toluene chemisorption, thereby accelerating the transformation of reaction intermediates through Langmuir-Hinshelwood (L-H) and Mars-van Krevelen (MvK) mechanisms. Moreover, the growth mechanism reveals that 2D Co3O4/Fe3O4 composite interfaces are generated in situ in molten salt, inducing the growth of 2D Co3O4 onto the surface lattice of 2D Fe3O4. This study provides new insights into enhancing oxygen activation and opens an unprecedented avenue in preparing efficient monolithic catalysts for VOC oxidation.
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Affiliation(s)
- Rong Li
- Key Laboratory of Aerosol Chemistry & Physics, State Key Laboratory of Loess and Quaternary Geology (SKLLQG), Institute of Earth Environment, Chinese Academy of Sciences (CAS), Xi'an 710061, P. R. China
- CAS Center for Excellence in Quaternary Science and Global Change, Xi'an 710061, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yu Huang
- Key Laboratory of Aerosol Chemistry & Physics, State Key Laboratory of Loess and Quaternary Geology (SKLLQG), Institute of Earth Environment, Chinese Academy of Sciences (CAS), Xi'an 710061, P. R. China
- CAS Center for Excellence in Quaternary Science and Global Change, Xi'an 710061, P. R. China
| | - Yimai Zhu
- Key Laboratory of Aerosol Chemistry & Physics, State Key Laboratory of Loess and Quaternary Geology (SKLLQG), Institute of Earth Environment, Chinese Academy of Sciences (CAS), Xi'an 710061, P. R. China
- CAS Center for Excellence in Quaternary Science and Global Change, Xi'an 710061, P. R. China
| | - Mingzhi Guo
- School of Civil Engineering, Shaoxing University, Shaoxing 312000, P. R. China
| | - Wei Peng
- Key Laboratory of Aerosol Chemistry & Physics, State Key Laboratory of Loess and Quaternary Geology (SKLLQG), Institute of Earth Environment, Chinese Academy of Sciences (CAS), Xi'an 710061, P. R. China
- CAS Center for Excellence in Quaternary Science and Global Change, Xi'an 710061, P. R. China
| | - Yizhou Zhi
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Chongqing Key Laboratory of Multiscale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chongqing 400714, P. R. China
| | - Liqin Wang
- Key Laboratory of Aerosol Chemistry & Physics, State Key Laboratory of Loess and Quaternary Geology (SKLLQG), Institute of Earth Environment, Chinese Academy of Sciences (CAS), Xi'an 710061, P. R. China
- CAS Center for Excellence in Quaternary Science and Global Change, Xi'an 710061, P. R. China
| | - Junji Cao
- Institute of Atmospheric Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Shuncheng Lee
- Department of Civil and Environmental Engineering, The Hong Kong Polytechnic University, Hong Kong 999077, P. R. China
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2
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Li H, Li Q, Sun T, Zhou Y, Han ST. Recent advances in artificial neuromorphic applications based on perovskite composites. MATERIALS HORIZONS 2024. [PMID: 39140168 DOI: 10.1039/d4mh00574k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/15/2024]
Abstract
High-performance perovskite materials with excellent physical, electronic, and optical properties play a significant role in artificial neuromorphic devices. However, the development of perovskites in microelectronics is inevitably hindered by their intrinsic non-ideal properties, such as high defect density, environmental sensitivity, and toxicity. By leveraging materials engineering, integrating various materials with perovskites to leverage their mutual strengths presents great potential to enhance ion migration, energy level alignment, photoresponsivity, and surface passivation, thereby advancing optoelectronic and neuromorphic device development. This review initially provides an overview of perovskite materials across different dimensions, highlighting their physical properties and detailing their applications and metrics in two- and three-terminal devices. Subsequently, we comprehensively summarize the application of perovskites in combination with other materials, including organics, nanomaterials, oxides, ferroelectrics, and crystalline porous materials (CPMs), to develop advanced devices such as memristors, transistors, photodetectors, sensors, light-emitting diodes (LEDs), and artificial neuromorphic systems. Lastly, we outline the challenges and future research directions in synthesizing perovskite composites for neuromorphic devices. Through the review and analysis, we aim to broaden the utilization of perovskites and their composites in neuromorphic research, offering new insights and approaches for grasping the intricate physical working mechanisms and functionalities of perovskites.
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Affiliation(s)
- Huaxin Li
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Qingxiu Li
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Tao Sun
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Su-Ting Han
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, P. R. China.
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3
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Lee CW, Yoo C, Han SS, Song YJ, Kim SJ, Kim JH, Jung Y. Centimeter-Scale Tellurium Oxide Films for Artificial Optoelectronic Synapses with Broadband Responsiveness and Mechanical Flexibility. ACS NANO 2024; 18:18635-18649. [PMID: 38950148 DOI: 10.1021/acsnano.4c04851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/03/2024]
Abstract
Prevailing over the bottleneck of von Neumann computing has been significant attention due to the inevitableness of proceeding through enormous data volumes in current digital technologies. Inspired by the human brain's operational principle, the artificial synapse of neuromorphic computing has been explored as an emerging solution. Especially, the optoelectronic synapse is of growing interest as vision is an essential source of information in which dealing with optical stimuli is vital. Herein, flexible optoelectronic synaptic devices composed of centimeter-scale tellurium dioxide (TeO2) films detecting and exhibiting synaptic characteristics to broadband wavelengths are presented. The TeO2-based flexible devices demonstrate a comprehensive set of emulating basic optoelectronic synaptic characteristics; i.e., excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), conversion of short-term to long-term memory, and learning/forgetting. Furthermore, they feature linear and symmetric conductance synaptic weight updates at various wavelengths, which are applicable to broadband neuromorphic computations. Based on this large set of synaptic attributes, a variety of applications such as logistic functions or deep learning and image recognition as well as learning simulations are demonstrated. This work proposes a significant milestone of wafer-scale metal oxide semiconductor-based artificial synapses solely utilizing their optoelectronic features and mechanical flexibility, which is attractive toward scaled-up neuromorphic architectures.
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Affiliation(s)
- Chung Won Lee
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Changhyeon Yoo
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Sang Sub Han
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Yu-Jin Song
- Department of Materials Science and Engineering, Dong-A University, Saha-Gu, Busan, 49315, Republic of Korea
| | - Seung Ju Kim
- The Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Jung Han Kim
- Department of Materials Science and Engineering, Dong-A University, Saha-Gu, Busan, 49315, Republic of Korea
| | - Yeonwoong Jung
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Materials Science and Engineering and Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
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Li L, Zhang Q, Geng D, Meng H, Hu W. Atomic engineering of two-dimensional materials via liquid metals. Chem Soc Rev 2024; 53:7158-7201. [PMID: 38847021 DOI: 10.1039/d4cs00295d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/02/2024]
Abstract
Two-dimensional (2D) materials, known for their distinctive electronic, mechanical, and thermal properties, have attracted considerable attention. The precise atomic-scale synthesis of 2D materials opens up new frontiers in nanotechnology, presenting novel opportunities for material design and property control but remains challenging due to the high expense of single-crystal solid metal catalysts. Liquid metals, with their fluidity, ductility, dynamic surface, and isotropy, have significantly enhanced the catalytic processes crucial for synthesizing 2D materials, including decomposition, diffusion, and nucleation, thus presenting an unprecedented precise control over material structures and properties. Besides, the emergence of liquid alloy makes the creation of diverse heterostructures possible, offering a new dimension for atomic engineering. Significant achievements have been made in this field encompassing defect-free preparation, large-area self-aligned array, phase engineering, heterostructures, etc. This review systematically summarizes these contributions from the aspects of fundamental synthesis methods, liquid catalyst selection, resulting 2D materials, and atomic engineering. Moreover, the review sheds light on the outlook and challenges in this evolving field, providing a valuable resource for deeply understanding this field. The emergence of liquid metals has undoubtedly revolutionized the traditional nanotechnology for preparing 2D materials on solid metal catalysts, offering flexible possibilities for the advancement of next-generation electronics.
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Affiliation(s)
- Lin Li
- College of Chemistry, Tianjin Normal University, Tianjin 300387, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Qing Zhang
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Dechao Geng
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
| | - Hong Meng
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Wenping Hu
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
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Yu J, Han W, Suleiman AA, Han S, Miao N, Ling FCC. Recent Advances on Pulsed Laser Deposition of Large-Scale Thin Films. SMALL METHODS 2024; 8:e2301282. [PMID: 38084465 DOI: 10.1002/smtd.202301282] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2023] [Revised: 11/22/2023] [Indexed: 07/21/2024]
Abstract
2D thin films, possessing atomically thin thickness, are emerging as promising candidates for next-generation electronic devices, due to their novel properties and high performance. In the early years, a wide variety of 2D materials are prepared using several methods (mechanical/liquid exfoliation, chemical vapor deposition, etc.). However, the limited size of 2D flakes hinders their fundamental research and device applications, and hence the effective large-scale preparation of 2D films is still challenging. Recently, pulsed laser deposition (PLD) has appeared to be an impactful method for wafer-scale growth of 2D films, owing to target-maintained stoichiometry, high growth rate, and efficiency. In this review, the recent advances on the PLD preparation of 2D films are summarized, including the growth mechanisms, strategies, and materials classification. First, efficacious strategies of PLD growth are highlighted. Then, the growth, characterization, and device applications of various 2D films are presented, such as graphene, h-BN, MoS2, BP, oxide, perovskite, semi-metal, etc. Finally, the potential challenges and further research directions of PLD technique is envisioned.
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Affiliation(s)
- Jing Yu
- Department of Physics, The University of Hong Kong, Hong Kong, 999077, P. R. China
- Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Wei Han
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, P. R. China
- School of Microelectronics, Hubei University, Wuhan, 430062, P. R. China
| | - Abdulsalam Aji Suleiman
- Institute of Materials Science and Nanotechnology, Bilkent University UNAM, Ankara, 06800, Turkey
| | - Siyu Han
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Naihua Miao
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
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Ekinci G, Özkal B, Kazan S. Investigation of Resistance Switching and Synaptic Properties of VO x for Neuromorphic Applications. ACS OMEGA 2024; 9:26235-26244. [PMID: 38911771 PMCID: PMC11190910 DOI: 10.1021/acsomega.4c02001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/29/2024] [Revised: 05/12/2024] [Accepted: 05/23/2024] [Indexed: 06/25/2024]
Abstract
The taking run on artificial intelligence in the last decades is based on the von Neumann architecture where memory and computation units are separately located from each other. This configuration causes a large amount of energy and time to be dissipated during data transfer between these two units, in contrast to synapses in biological neurons. A new paradigm has been proposed inspired by biological neurons in human brains, known as neuromorphic computing. Due to the unusual current-voltage characteristic of memristor devices such as pinched hysteresis loops, memristors are considered a key element of neuromorphic architecture. In this study, we report the basic current-voltage characteristic of the memristor devices in the form of Si/SiO2/Pt(30 nm)/VO x (3, 13, 25 nm)/Pt (30 nm) sandwich structure. Synaptic functions such as spike-time-dependent plasticity (STDP), paired-pulse facilitation (PPF), long-term potentiation (LTP), and long-term depression (LTD) of memristor devices were examined in detail. The oxide layer VO x has been grown by using the VO2 target in a pulsed laser deposition (PLD) chamber. The composition and oxidation states of the oxide layer were examined using the X-ray photoelectron spectroscopy (XPS) technique. The status of oxygen vacancies, which play an active role in the operation of the devices, was examined with a photoluminescence (PL) technique. The experimental results showed that the thickness of the oxide layer can significantly influence the synaptic and resistive switching properties of the devices.
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Affiliation(s)
- Gökhan Ekinci
- Department
of Physics, Gebze Technical University, Kocaeli 41400, Türkiye
- Department
of Physics, Pîrî Reis University, Istanbul 34940, Türkiye
| | - Bünyamin Özkal
- Department
of Physics, Gebze Technical University, Kocaeli 41400, Türkiye
| | - Sinan Kazan
- Department
of Physics, Gebze Technical University, Kocaeli 41400, Türkiye
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7
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Kim SW, Seo J, Lee S, Shen D, Kim Y, Choi HH, Yoo H, Kim HH. Nonvolatile Reconfigurable Logic Device Based on Photoinduced Interfacial Charge Trapping in van der Waals Gap. ACS APPLIED MATERIALS & INTERFACES 2024; 16:22131-22138. [PMID: 38632927 DOI: 10.1021/acsami.4c01627] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/19/2024]
Abstract
Due to the increasing complexity in miniaturization of electronic devices, reconfigurable field-effect transistors (RFETs) have emerged as a solution. Although the foundational concepts of RFETs have matured over two decades, ongoing breakthroughs are needed to address challenges such as improving the device performance as well as achieving balanced symmetry between n-type and p-type transport modes with long-term stability. Herein, we present a nonvolatile WSe2-based RFET that utilizes photoassisted interfacial charge trapping at the h-BN and SiO2 interface. Unlike typical RFETs with two gate electrodes, our RFETs achieved polarity control with a single operating gate activated exclusively under white-light exposure. The threshold voltage was tunable, ranging from 27.4 (-31.6 V) to 0.9 (+19.5 V), allowing selective activation of n-type (p-type) operation at VGS = 0 V. Additionally, our WSe2-based RFETs show superior repeatability and long-term stability. Leveraging these advantages, various reconfigurable logic circuits were successfully demonstrated, including complementary inverters and switch circuits as well as pull-up and pull-down circuits, highlighting the potential of WSe2 FETs for future advancements of integrated circuits.
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Affiliation(s)
- Sun Woo Kim
- School of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, Korea
- Department of Energy Engineering Convergence, Kumoh National Institute of Technology, Gumi 39177, Korea
| | - Juhyung Seo
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Korea
| | - Subin Lee
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Korea
| | - Daozhi Shen
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Youngjin Kim
- Department of Materials Engineering and Convergence Technology, Gyeongsang National University, Jinju 52828, Korea
| | - Hyun Ho Choi
- Department of Materials Engineering and Convergence Technology, Gyeongsang National University, Jinju 52828, Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Korea
| | - Hyun Ho Kim
- School of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, Korea
- Department of Energy Engineering Convergence, Kumoh National Institute of Technology, Gumi 39177, Korea
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8
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Zhong K, Sun P, Xu H. Advances in Defect Engineering of Metal Oxides for Photocatalytic CO 2 Reduction. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2310677. [PMID: 38686700 DOI: 10.1002/smll.202310677] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Revised: 02/29/2024] [Indexed: 05/02/2024]
Abstract
Photocatalytic CO2 reduction technology, capable of converting low-density solar energy into high-density chemical energy, stands as a promising approach to alleviate the energy crisis and achieve carbon neutrality. Semiconductor metal oxides, characterized by their abundant reserves, good stability, and easily tunable structures, have found extensive applications in the field of photocatalysis. However, the wide bandgap inherent in metal oxides contributes to their poor efficiency in photocatalytic CO2 reduction. Defect engineering presents an effective strategy to address these challenges. This paper reviews the research progress in defect engineering to enhance the photocatalytic CO2 reduction performance of metal oxides, summarizing defect classifications, preparation methods, and characterization techniques. The focus is on defect engineering, represented by vacancies and doping, for improving the performance of metal oxide photocatalysts. This includes advancements in expanding the photoresponse range, enhancing photogenerated charge separation, and promoting CO2 molecule activation. Finally, the paper provides a summary of the current issues and challenges faced by defect engineering, along with a prospective outlook on the future development of photocatalytic CO2 reduction technology.
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Affiliation(s)
- Kang Zhong
- School of the Environment and Safety Engineering, Jiangsu University, Zhenjiang, 212013, P. R. China
| | - Peipei Sun
- School of the Environment and Safety Engineering, Jiangsu University, Zhenjiang, 212013, P. R. China
| | - Hui Xu
- School of the Environment and Safety Engineering, Jiangsu University, Zhenjiang, 212013, P. R. China
- Jiangsu Collaborative Innovation Center of Technology and Material of Water Treatment, Suzhou University of Science and Technology, Suzhou, 215009, P. R. China
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Xu L, Xu L, Lan J, Li Y, Li Q, Wang A, Guo Y, Ang YS, Quhe R, Lu J. Sub-5 nm Ultrathin In 2O 3 Transistors for High-Performance and Low-Power Electronic Applications. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38676632 DOI: 10.1021/acsami.4c01353] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/29/2024]
Abstract
Ultrathin oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, ultrathin indium oxide (In2O3) field-effect transistors (FETs) with thicknesses down to 0.4 nm exhibit an extremely high drain current (104 μA/μm) and transconductance (4000 μS/μm). Here, we employ ab initio quantum transport simulation to investigate the performance limit of sub-5 nm gate length (Lg) ultrathin In2O3 FETs. Based on the International Technology Roadmap for Semiconductors (ITRS) criteria for high-performance (HP) devices, the scaling limit of ultrathin In2O3 FETs can reach 2 nm in terms of on-state current, delay time, and power dissipation. The wide bandgap nature of ultrathin In2O3 (3.0 eV) renders it a suitable candidate for ITRS low-power (LP) electronics with Lg down to 3 nm. Notably, both the HP and LP ultrathin In2O3 FETs exhibit superior energy-delay products as compared to those of other common 2D semiconductors such as monolayer MoS2 and MoTe2. These findings unveil the potential of ultrathin In2O3 in HP and LP nanoelectronic device applications.
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Affiliation(s)
- Linqiang Xu
- State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, China
- Science, Mathematics and Technology, Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372, Singapore
| | - Lianqiang Xu
- School of Physics and Electronic Information Engineering, Engineering Research Center of Nanostructure and Functional Materials, Ningxia Normal University, Guyuan 756000, China
| | - Jun Lan
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yida Li
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Qiuhui Li
- State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, China
| | - Aili Wang
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- Zhejiang University─University of Illinois at Urbana─Champaign Institute, Zhejiang University, Haining 314400, China
| | - Ying Guo
- School of Physics and Telecommunication Engineering, Shaanxi Key Laboratory of Catalysis, Shaanxi University of Technology, Hanzhong 723001, People's Republic of China
| | - Yee Sin Ang
- Science, Mathematics and Technology, Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372, Singapore
| | - Ruge Quhe
- State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
| | - Jing Lu
- State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226000, China
- Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, China
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10
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Melendez LV, Nguyen CK, Wilms M, Syed N, Daeneke T, Duffy NW, Fery A, Della Gaspera E, Gómez DE. Probing the Interaction between Individual Metal Nanocrystals and Two-Dimensional Metal Oxides via Electron Energy Loss Spectroscopy. NANO LETTERS 2024; 24:1944-1950. [PMID: 38305174 DOI: 10.1021/acs.nanolett.3c04225] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/03/2024]
Abstract
Metal nanoparticles can photosensitize two-dimensional metal oxides, facilitating their electrical connection to devices and enhancing their abilities in catalysis and sensing. In this study, we investigated how individual silver nanoparticles interact with two-dimensional tin oxide and antimony-doped indium oxide using electron energy loss spectroscopy (EELS). The measurement of the spectral line width of the longitudinal plasmon resonance of the nanoparticles in absence and presence of 2D materials allowed us to quantify the contribution of chemical interface damping to the line width. Our analysis reveals that a stronger interaction (damping) occurs with 2D antimony-doped indium oxide due to its highly homogeneous surface. The results of this study offer new insight into the interaction between metal nanoparticles and 2D materials.
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Affiliation(s)
- Lesly V Melendez
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia
| | - Chung Kim Nguyen
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
| | - Michael Wilms
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia
| | - Nitu Syed
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
- School of Physics, The University of Melbourne, Melbourne, Victoria 3010, Australia
| | - Torben Daeneke
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
| | - Noel W Duffy
- CSIRO Energy, Clayton South, Victoria 3169, Australia
| | - Andreas Fery
- Physical Chemistry of Polymeric Materials, Technische Universität Dresden, Bergstr. 66, 01069 Dresden, Germany
- Institute for Physical Chemistry and Polymer Physics, Leibniz Institut für Polymerforschung Dresden e.V., Hohe Str. 6, 01069 Dresden, Germany
| | | | - Daniel E Gómez
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia
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11
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Yun Q, Ge Y, Shi Z, Liu J, Wang X, Zhang A, Huang B, Yao Y, Luo Q, Zhai L, Ge J, Peng Y, Gong C, Zhao M, Qin Y, Ma C, Wang G, Wa Q, Zhou X, Li Z, Li S, Zhai W, Yang H, Ren Y, Wang Y, Li L, Ruan X, Wu Y, Chen B, Lu Q, Lai Z, He Q, Huang X, Chen Y, Zhang H. Recent Progress on Phase Engineering of Nanomaterials. Chem Rev 2023. [PMID: 37962496 DOI: 10.1021/acs.chemrev.3c00459] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2023]
Abstract
As a key structural parameter, phase depicts the arrangement of atoms in materials. Normally, a nanomaterial exists in its thermodynamically stable crystal phase. With the development of nanotechnology, nanomaterials with unconventional crystal phases, which rarely exist in their bulk counterparts, or amorphous phase have been prepared using carefully controlled reaction conditions. Together these methods are beginning to enable phase engineering of nanomaterials (PEN), i.e., the synthesis of nanomaterials with unconventional phases and the transformation between different phases, to obtain desired properties and functions. This Review summarizes the research progress in the field of PEN. First, we present representative strategies for the direct synthesis of unconventional phases and modulation of phase transformation in diverse kinds of nanomaterials. We cover the synthesis of nanomaterials ranging from metal nanostructures such as Au, Ag, Cu, Pd, and Ru, and their alloys; metal oxides, borides, and carbides; to transition metal dichalcogenides (TMDs) and 2D layered materials. We review synthesis and growth methods ranging from wet-chemical reduction and seed-mediated epitaxial growth to chemical vapor deposition (CVD), high pressure phase transformation, and electron and ion-beam irradiation. After that, we summarize the significant influence of phase on the various properties of unconventional-phase nanomaterials. We also discuss the potential applications of the developed unconventional-phase nanomaterials in different areas including catalysis, electrochemical energy storage (batteries and supercapacitors), solar cells, optoelectronics, and sensing. Finally, we discuss existing challenges and future research directions in PEN.
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Affiliation(s)
- Qinbai Yun
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
- Department of Chemical and Biological Engineering & Energy Institute, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Yiyao Ge
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Zhenyu Shi
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Jiawei Liu
- Institute of Sustainability for Chemicals, Energy and Environment, Agency for Science, Technology and Research (A*STAR), Singapore, 627833, Singapore
| | - Xixi Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - An Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Biao Huang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Qinxin Luo
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Li Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China
| | - Jingjie Ge
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR
| | - Yongwu Peng
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, China
| | - Chengtao Gong
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, China
| | - Meiting Zhao
- Institute of Molecular Aggregation Science, Department of Chemistry, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, Tianjin 300072, China
| | - Yutian Qin
- Institute of Molecular Aggregation Science, Department of Chemistry, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, Tianjin 300072, China
| | - Chen Ma
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, Hong Kong, China
| | - Gang Wang
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, Hong Kong, China
| | - Qingbo Wa
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Xichen Zhou
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Zijian Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Wei Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Hua Yang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Yi Ren
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Yongji Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Lujing Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Xinyang Ruan
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Yuxuan Wu
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Bo Chen
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials, School of Chemistry and Life Sciences, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Qipeng Lu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Zhuangchai Lai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong SAR, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Xiao Huang
- Institute of Advanced Materials (IAM), School of Flexible Electronics (SoFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, China
| | - Ye Chen
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, Hong Kong, China
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China
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12
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Kim H, Lee J, Kim HW, Woo J, Kim MH, Lee SH. Definition of a Localized Conducting Path via Suppressed Charge Injection in Oxide Memristors for Stable Practical Hardware Neural Networks. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37874750 DOI: 10.1021/acsami.3c13514] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/26/2023]
Abstract
Oxide-based memristors have been demonstrated as suitable options for memory components in neuromorphic systems. In such devices, the resistive switching characteristics are caused by the formation of conductive filaments (CFs) comprising oxygen vacancies. Thus, the electrical performance is primarily governed by the CF structure. Despite various approaches for regulating the oxygen vacancy distributions in oxide memristors, controlling the CF structure without modifying the device configuration related to material compatibility is still a challenge. This study demonstrates an effective strategy for localizing CF distributions in memristors by suppressing charge injection during the formation of conducting paths. As the injected charge quantity is reduced in the electroforming process of the oxide memristor, the CF distributions become narrower, leading to more reproducible and stable resistive switching characteristics in the device. Based on these findings, a reliable hardware neural network comprising oxide memristors is constructed to recognize complex images. The developed memristor has been employed as a synaptic memory component in systems without degradation for a long time. This promising concept of oxide memristors acting as stable synaptic components holds great potential for developing practical neuromorphic systems and their expansion into artificial intelligent systems.
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Affiliation(s)
- Hyeongwook Kim
- School of Electronics Engineering, and School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehak-ro, Buk-gu, Daegu 702-701, Republic of Korea
| | - Jihwan Lee
- School of Electronics Engineering, and School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehak-ro, Buk-gu, Daegu 702-701, Republic of Korea
| | - Hyun Wook Kim
- School of Electronics Engineering, and School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehak-ro, Buk-gu, Daegu 702-701, Republic of Korea
| | - Jiyong Woo
- School of Electronics Engineering, and School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehak-ro, Buk-gu, Daegu 702-701, Republic of Korea
| | - Min-Hwi Kim
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Sin-Hyung Lee
- School of Electronics Engineering, and School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehak-ro, Buk-gu, Daegu 702-701, Republic of Korea
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13
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Zhou K, Jia Z, Zhou Y, Ding G, Ma XQ, Niu W, Han ST, Zhao J, Zhou Y. Covalent Organic Frameworks for Neuromorphic Devices. J Phys Chem Lett 2023; 14:7173-7192. [PMID: 37540588 DOI: 10.1021/acs.jpclett.3c01711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/06/2023]
Abstract
Neuromorphic computing could enable the potential to break the inherent limitations of conventional von Neumann architectures, which has led to widespread research interest in developing novel neuromorphic memory devices, such as memristors and bioinspired artificial synaptic devices. Covalent organic frameworks (COFs), as crystalline porous polymers, have tailorable skeletons and pores, providing unique platforms for the interplay with photons, excitons, electrons, holes, ions, spins, and molecules. Such features encourage the rising research interest in COF materials in neuromorphic electronics. To develop high-performance COF-based neuromorphic memory devices, it is necessary to comprehensively understand materials, devices, and applications. Therefore, this Perspective focuses on discussing the use of COF materials for neuromorphic memory devices in terms of molecular design, thin-film processing, and neuromorphic applications. Finally, we provide an outlook for future directions and potential applications of COF-based neuromorphic electronics.
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Affiliation(s)
- Kui Zhou
- Institute for Advanced Study, Shenzhen University, 3688 Nanhai Avenue, Shenzhen 518060, P. R. China
| | - Ziqi Jia
- Institute for Advanced Study, Shenzhen University, 3688 Nanhai Avenue, Shenzhen 518060, P. R. China
| | - Yao Zhou
- College of Materials Science and Engineering, Shenzhen University, 3688 Nanhai Avenue, Shenzhen 518060, P. R. China
| | - Guanglong Ding
- Institute for Advanced Study, Shenzhen University, 3688 Nanhai Avenue, Shenzhen 518060, P. R. China
| | - Xin-Qi Ma
- Institute for Advanced Study, Shenzhen University, 3688 Nanhai Avenue, Shenzhen 518060, P. R. China
| | - Wenbiao Niu
- Institute for Advanced Study, Shenzhen University, 3688 Nanhai Avenue, Shenzhen 518060, P. R. China
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, 3688 Nanhai Avenue, Shenzhen 518060, P. R. China
| | - Jiyu Zhao
- State Key Laboratory of Fine Chemicals, Dalian University of Technology, 2 Linggong Road, Dalian 116024, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, 3688 Nanhai Avenue, Shenzhen 518060, P. R. China
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