Ultrafast Coherent THz Lattice Dynamics Coupled to Spins in the van der Waals Antiferromagnet FePS3

Enhancement of Magnetic Stability in Antiferromagnetic CoO Films by Adsorption of Organic Molecules

Antiferromagnets are a class of magnetic materials of great interest in spintronic devices because of their stability and ultrafast dynamics. When interfaced with an organic molecular layer, antiferromagnetic (AF) films are expected to form a spinterface that can allow fine control of specific AF properties. In this paper, we investigate spinterface effects on CoO, an AF oxide. To access the magnetic state of the antiferromagnet, we couple it to a ferromagnetic Co film via an exchange bias (EB) effect. In this way, the formation of a spinterface is detected through changes induced on the CoO/Co EB system. We demonstrate that C60 and Gaq3 adsorption on CoO shifts its blocking temperature; in turn, an increase in both the EB fields and the coercivities is observed on the EB-coupled Co layer. Ab initio calculations for the CoO/C60 interface indicate that the molecular adsorption is responsible for a charge redistribution on the CoO layer that alters the occupation of the d orbitals of Co atoms and, to a smaller extent, the p orbitals of oxygen. As a result, the AF coupling between Co atoms in the CoO is enhanced. Considering the granular nature of CoO, a larger AF stability upon molecular adsorption is then associated with a larger number of AF grains that are stable upon reversal of the Co layer.

Nonvolatile Electric Control of Antiferromagnet CrSBr

van der Waals magnets are emerging as a promising material platform for electric field control of magnetism, offering a pathway toward the elimination of external magnetic fields from spintronic devices. A further step is the integration of such magnets with electrical gating components that would enable nonvolatile control of magnetic states. However, this approach remains unexplored for antiferromagnets, despite their growing significance in spintronics. Here, we demonstrate nonvolatile electric field control of magnetoelectric characteristics in van der Waals antiferromagnet CrSBr. We integrate a CrSBr channel in a flash-memory architecture featuring charge trapping graphene multilayers. The electrical gate operation triggers a nonvolatile 200% change in the antiferromagnetic state of CrSBr resistance by manipulating electron accumulation/depletion. Moreover, the nonvolatile gate modulates the metamagnetic transition field of CrSBr and the magnitude of magnetoresistance. Our findings highlight the potential of manipulating magnetic properties of antiferromagnetic semiconductors in a nonvolatile way.

The Impact of Local Strain Fields in Noncollinear Antiferromagnetic Films

Antiferromagnets hosting structural or magnetic order that breaks time reversal symmetry are of increasing interest for "beyond von Neumann" computing applications because the topology of their band structure allows for intrinsic physical properties, exploitable in integrated memory and logic function. One such group are the noncollinear antiferromagnets. Essential for domain manipulation is the existence of small net moments found routinely when the material is synthesized in thin film form and attributed to symmetry breaking caused by spin canting, either from the Dzyaloshinskii-Moriya interaction or from strain. Although the spin arrangement of these materials makes them highly sensitive to strain, there is little understanding about the influence of local strain fields caused by lattice defects on global properties, such as magnetization and anomalous Hall effect. This premise is investigated by examining noncollinear antiferromagnetic films that are either highly lattice mismatched or closely matched to their substrate. In either case, edge dislocation networks are generated and for the former case, these extend throughout the entire film thickness, creating large local strain fields. These strain fields allow for finite intrinsic magnetization in seemingly structurally relaxed films and influence the antiferromagnetic domain state and the intrinsic anomalous Hall effect.

Magnetic order in 2D antiferromagnets revealed by spontaneous anisotropic magnetostriction

The temperature dependent order parameter provides important information on the nature of magnetism. Using traditional methods to study this parameter in two-dimensional (2D) magnets remains difficult, however, particularly for insulating antiferromagnetic (AF) compounds. Here, we show that its temperature dependence in AF MPS3 (M(II) = Fe, Co, Ni) can be probed via the anisotropy in the resonance frequency of rectangular membranes, mediated by a combination of anisotropic magnetostriction and spontaneous staggered magnetization. Density functional calculations followed by a derived orbital-resolved magnetic exchange analysis confirm and unravel the microscopic origin of this magnetization-induced anisotropic strain. We further show that the temperature and thickness dependent order parameter allows to deduce the material's critical exponents characterising magnetic order. Nanomechanical sensing of magnetic order thus provides a future platform to investigate 2D magnetism down to the single-layer limit.

2D antiferromagnetic semiconducting FeCN with interesting properties

Two-dimensional magnetic materials have demonstrated favorable properties (e.g., large spin polarization and net magnetization) for the development of next-generation spintronic devices. The discovery of such materials and insight into their magnetic coupling mechanism has become a research focus. Here, on the basis of first-principles structural search calculations, we have identified a fresh FeCN monolayer consisting of edge-sharing Fe triangle sublattices and FeC3N2 rings, which integrates antiferromagnetism, semiconductivity, and planarity. Interestingly, it possesses a large magnetic anisotropy energy (MAE) of 614 μeV per Fe atom, a narrow band gap (Eg) of 0.47 eV, a large magnetic moment of 3.15 μB, and a proper Néel temperature (TN) of 97 K. The direct exchange between the nearest-neighbor Fe atoms in the triangle sublattice is mainly responsible for the AFM ordering. Its high structural stability, stemming from the collective contribution of covalent C-C and C-N bonds, ionic Fe-N bonds, and metallic Fe-Fe bonds, provides a strong feasibility for experimental synthesis.

Lightning the Spin: Harnessing the Potential of 2D Magnets in Opto-Spintronics

Since the emergence of 2D magnets in 2017, the diversity of these materials has greatly expanded. Their 2D nature (atomic-scale thickness) endows these magnets with strong magnetic anisotropy, layer-dependent and switchable magnetic order, and quantum-confined quasiparticles, which distinguish them from conventional 3D magnetic materials. Moreover, the 2D geometry facilitates light incidence for opto-spintronic applications and potential on-chip integration. In analogy to optoelectronics based on optical-electronic interactions, opto-spintronics use light-spin interactions to process spin information stored in the solid state. In this review, opto-spintronics is divided into three types with respect to the wavelengths of radiation interacting with 2D magnets: 1) GHz (microwave) to THz (mid-infrared), 2) visible, and 3) UV to X-rays. It is focused on the recent research advancements on the newly discovered mechanisms of light-spin interactions in 2D magnets and introduces the potential design of novel opto-spintronic applications based on these interactions.

Ultrafast Laser Pulse Induced Transient Ferrimagnetic State and Spin Relaxation Dynamics in Two-Dimensional Antiferromagnets

We employ real-time time-dependent density functional theory (rt-TDDFT) and ab initio nonadiabatic molecular dynamics (NAMD) to systematically investigate the ultrafast laser pulses induced spin transfer and relaxation dynamics of two-dimensional (2D) antiferromagnetic-ferromagnetic (AFM/FM) MnPS3/MnSe2 van der Waals heterostructures. We demonstrate that laser pulses can induce a ferrimagnetic (FiM) state in the AFM MnPS3 layer within tens of femtoseconds and maintain it for subpicosecond time scale before reverting to the AFM state. We identify the mechanism in which the asymmetric optical intersite spin transfer (OISTR) effect occurring within the sublattices of the AFM and FM layers drives the interlayer spin-selective charge transfer, leading to the transition from AFM to FiM state. Furthermore, the unequal electron-phonon coupling of spin-up and spin-down channels of AFM spin sublattice causes an inequivalent spin relaxation, in turn extending the time scale of the FiM state. These findings are essential for designing novel optical-driven ultrafast 2D magnetic switches.

An antiferromagnetic semiconducting FeCN2 monolayer with a large magnetic anisotropy and strong magnetic coupling

Two-dimensional antiferromagnetic (AFM) materials with an intrinsic semiconductivity, a high critical temperature, and a sizable magnetic anisotropy energy (MAE) have attracted extensive attention because they show promise for high-performance spintronic nanodevices. Here, we have identified a new FeCN2 monolayer with a unique zigzag Fe chain through first-principles swarm structural search calculations. It is an AFM semiconductor with a direct band gap of 2.04 eV, a Néel temperature (TN) of 176 K, and a large in-plane MAE of 0.50 meV per Fe atom. More interestingly, the intrinsic antiferromagnetism, contributed by the strong magnetic coupling of neighbouring Fe ions, can be maintained under the external biaxial strains. A large cohesive energy and high dynamical stability favor synthesis and application. Therefore, these fascinating properties of the FeCN2 monolayer make it a promising nanoscale spintronic material.