A Highly Crystalline Single Layer 2D Polymer for Low Variability and Excellent Scalability Molecular Memristors

One-Dimensional Covalent Organic Framework-Based Multilevel Memristors for Neuromorphic Computing

Memristors are essential components of neuromorphic systems that mimic the synaptic plasticity observed in biological neurons. In this study, a novel approach employing one-dimensional covalent organic framework (1D COF) films was explored to enhance the performance of memristors. The unique structural and electronic properties of two 1D COF films (COF-4,4'-methylenedianiline (MDA) and COF-4,4'-oxydianiline (ODA)) offer advantages for multilevel resistive switching, which is a key feature in neuromorphic computing applications. By further introducing a TiO2 layer on the COF-ODA film, a built-in electric field between the COF-TiO2 interfaces could be generated, demonstrating the feasibility of utilizing COFs as a platform for constructing memristors with tunable resistive states. The 1D nanochannels of these COF structures contributed to the efficient modulation of electrical conductance, enabling precise control over synaptic weights in neuromorphic circuits. This study also investigated the potential of these COF-based memristors to achieve energy-efficient and high-density memory devices.

Molecular-Potential and Redox Coregulated Cathodic Electrosynthesis toward Ionic Azulene-Based Thin Films for Organic Memristors

Organic memristors as promising electronic units are attracting significant attention owing to their simplicity of molecular structure design. However, fabricating high-quality organic films via novel synthetic technologies and exploring unprecedented chemical structures to achieve excellent memory performance in organic memristor devices are highly challenging. In this work, we report a cathodic electropolymerization to synthesize an ionic azulene-based memristive film (PPMAz-Py+Br-) under the molecular-potential and redox coregulation. During the cathodic electropolymerization process, electropositive pyridinium salts migrate to the cathode under an electric field, undergo a reduction-coupling deprotonation reaction, and polymerize into a uniform film with a controllable thickness on the electrode surface. The prepared Al/PPMAz-Py+Br-/ITO devices not only exhibit a high ON/OFF ratio of 1.8 × 103, high stability, long memory retention, and endurance under a wide range of voltage scans, but also achieve excellent multilevel storage and history-dependent memristive performance. In addition, the devices can mimic important biosynaptic functions, such as learning/forgetting function, synaptic enhancement/inhibition, paired-pulse facilitation/depression, and spiking-rate-dependent plasticity. The tunable memristive performances are attributed to the capture of free electrons on pyridinium cations, the migration of the aluminum ions (Al3+), and the form of Al conductive filaments under voltage scans.

Desirable Strong and Tough Adhesive Inspired by Dragonfly Wings and Plant Cell Walls

The production of wood-based panels has a significant demand for mechanically strong and flexible biomass adhesives, serving as alternatives to nonrenewable and toxic formaldehyde-based adhesives. Nonetheless, plywood usually exhibits brittle fracture due to the inherent trade-off between rigidity and toughness, and it is susceptible to damage and deformation defects in production applications. Herein, inspired by the microstructure of dragonfly wings and the cross-linking structure of plant cell walls, a soybean meal (SM) adhesive with great strength and toughness was developed. The strategy was combined with a multiple assembly system based on the tannic acid (TA) stripping/modification of molybdenum disulfide (MoS2@TA) hybrids, phenylboronic acid/quaternary ammonium doubly functionalized chitosan (QCP), and SM. Motivated by the microstructure of dragonfly wings, MoS2@TA was tightly bonded with the SM framework through Schiff base and strong hydrogen bonding to dissipate stress energy through crack deflection, bridging, and immobilization. QCP imitated borate chemistry in plant cell walls to optimize interfacial interactions within the adhesive by borate ester bonds, boron-nitrogen coordination bonds, and electrostatic interactions and dissipate energy through sacrificial bonding. The shear strength and fracture toughness of the SM/QCP/MoS2@TA adhesive were 1.58 MPa and 0.87 J, respectively, which were 409.7% and 866.7% higher than those of the pure SM adhesive. In addition, MoS2@TA and QCP gave the adhesive good mildew resistance, durability, weatherability, and fire resistance. This bioinspired design strategy offers a viable and sustainable approach for creating multifunctional strong and tough biobased materials.

2D Conjugated Polymer Thin Films for Organic Electronics: Opportunities and Challenges

2D conjugated polymers (2DCPs) possess extended in-plane π-conjugated lattice and out-of-plane π-π stacking, which results in enhanced electronic performance and potentially unique band structures. These properties, along with predesignability, well-defined channels, easy postmodification, and order structure attract extensive attention from material science to organic electronics. In this review, the recent advance in the interfacial synthesis and conductivity tuning strategies of 2DCP thin films, as well as their application in organic electronics is summarized. Furthermore, it is shown that, by combining topology structure design and targeted conductivity adjustment, researchers have fabricated 2DCP thin films with predesigned active groups, highly ordered structures, and enhanced conductivity. These films exhibit great potential for various thin-film organic electronics, such as organic transistors, memristors, electrochromism, chemiresistors, and photodetectors. Finally, the future research directions and perspectives of 2DCPs are discussed in terms of the interfacial synthetic design and structure engineering for the fabrication of fully conjugated 2DCP thin films, as well as the functional manipulation of conductivity to advance their applications in future organic electronics.

Overcoming the Unfavorable Effects of "Boltzmann Tyranny:" Ultra-Low Subthreshold Swing in Organic Phototransistors via One-Transistor-One-Memristor Architecture

Organic phototransistors (OPTs), as photosensitive organic field-effect transistors (OFETs), have gained significant attention due to their pivotal roles in imaging, optical communication, and night vision. However, their performance is fundamentally limited by the Boltzmann distribution of charge carriers, which constrains the average subthreshold swing (SSave ) to a minimum of 60 mV/decade at room temperature. In this study, an innovative one-transistor-one-memristor (1T1R) architecture is proposed to overcome the Boltzmann limit in conventional OFETs. By replacing the source electrode in an OFET with a memristor, the 1T1R device exploits the memristor's sharp resistance state transitions to achieve an ultra-low SSave of 18 mV/decade. Consequently, the 1T1R devices demonstrate remarkable sensitivity to photo illumination, with a high specific detectivity of 3.9 × 109  cm W-1 Hz1/2 , outperforming conventional OPTs (4.9 × 104  cm W-1 Hz1/2 ) by more than four orders of magnitude. The 1T1R architecture presents a potentially universal solution for overcoming the detrimental effects of "Boltzmann tyranny," setting the stage for the development of ultra-low SSave devices in various optoelectronic applications.

Recent advances in two-dimensional polymers: synthesis, assembly and energy-related applications

Two-dimensional polymers (2DPs) are a class of 2D crystalline polymer materials with definite structures, which have outstanding physical-chemical and electronic properties. They cleverly link organic building units through strong covalent bonds and can construct functional 2DPs through reasonable design and selection of different monomer units to meet various application requirements. As promising energy materials, 2DPs have developed rapidly in recent years. This review first introduces the basic overview of 2DPs, such as their historical development, inherent 2D characteristics and diversified topological advantages, followed by the summary of the typical 2DP synthesis methods recently (including "top-down" and "bottom-up" methods). The latest research progress in assembly and processing of 2DPs and the energy-related applications in energy storage and conversion are also discussed. Finally, we summarize and prospect the current research status, existing challenges, and future research directions of 2DPs.

Ni Single-Atoms Based Memristors with Ultrafast Speed and Ultralong Data Retention

Memristor with low-power, high density, and scalability fulfills the requirements of the applications of the new computing system beyond Moore's law. However, there are still nonideal device characteristics observed in the memristor to be solved. The important observation is that retention and speed are correlated parameters of memristor with trade off against each other. The delicately modulating distribution and trapping level of defects in electron migration-based memristor is expected to provide a compromise method to address the contradictory issue of improving both switching speed and retention capability. Here, high-performance memristor based on the structure of ITO/Ni single-atoms (NiSAs/N-C)/Polyvinyl pyrrolidone (PVP)/Au is reported. By utilizing well-distributed trapping sites , small tunneling barriers/distance and high charging energy, the memristor with an ultrafast switching speed of 100 ns, ultralong retention capability of 106  s, a low set voltage (Vset ) of ≈0.7 V, a substantial ON/OFF ration of 103 , and low spatial variation in cycle-to-cycle (500 cycles) and device-to-device characteristics (128 devices) is demonstrated. On the premise of preserving the strengths of a fast switching speed, this memristor exhibits ultralong retention capability comparable to the commercialized flash memory. Finally, a memristor ratioed logic-based combinational memristor array to realize the one-bit full adder is further implemented.

Crystal Self-Assembly under Confinement: Bridging Nanomaterials to Integrated Devices

ConspectusSelf-assembly, a spontaneous process that organizes disordered constituents into ordered structures, has revolutionized our fundamental understanding of living matter, nanotechnology, and molecular science. From the perspective of nanomaterials, self-assembly serves as a bottom-up method for creating long-range-ordered materials. This is accomplished by tailoring the geometry, chemistry, and interactions of the components, thereby facilitating the efficient fabrication of high-quality materials and high-performance functional devices. Over the past few decades, we have seen controllable organization and diverse phases in self-assembled materials, such as organic crystals, biomolecular structures, and colloidal nanoparticle supercrystals. However, most self-assembled ordered materials and their assembly mechanisms are derived from constituents in a liquid bulk medium, where the effects of boundaries and interfaces are negligible. In the context of nanostructure patterning, self-assembly occurs in confined spaces, with feature sizes ranging from a few to hundreds of nanometers. In such settings, ubiquitous boundaries and interfaces can trap the system in a kinetically favored but metastable state, devoid of long-range order. This makes it extremely difficult to achieve ordered structures in micro/nano-patterning techniques that rely on sessile microdroplets, such as inkjet printing, dip-pen lithography, and contact printing.In stark contrast to sessile droplets, capillary bridges─formed by liquids confined between two solid surfaces─provide unique opportunities for understanding the long-range-ordered self-assembly of crystalline materials under spatial confinement. Because capillary bridges are stabilized by Laplace pressure, which is inversely proportional to the feature size, the confinement and manipulation of solutions or suspensions of functional materials at the nanoscale become accessible through the rational design of surface chemistry and geometry. Although global thermodynamic equilibrium is unattainable in evaporative systems, ordered nucleation and packing of constituent components can be locally realized at the contact line of capillary bridges. This enables the unprecedented fabrication of long-range-ordered micro/nanostructures with deterministic patterns.In this Account, we review the advancements in long-range-ordered self-assembly of crystalline micro/nanostructures under confinement. First, we briefly introduce crystalline materials characterized by strong intramolecular interactions and relatively weak intermolecular forces, analyzing both the opportunities and challenges inherent to self-assembled nanomaterials. Next, we delve into the construction and manipulation of confined liquids, focusing especially on capillary bridges controlled by engineered chemistry and geometry to regulate Laplace pressure. Through this approach, we have achieved capillary bridges with thicknesses on the order of a few nanometers and wafer-scale homogeneity, facilitating the self-assembly of ordered structures. Supported by factors such as local free-volume entropy, electrostatic interactions, curvilinear geometry, directional microfluidics, and nanoconfinement, we have achieved long-range-ordered, deterministic patterning of organic semiconductors, metal-halide perovskites, and colloidal nanocrystal superlattices using this capillary-bridge platform. These long-range microstructures serve as a bridge between nanomaterials and integrated devices, enabling emergent functionalities like intrinsic stretchability, giant photoconductivity, propagating and interacting exciton polaritons, and spin-valley-locked lasing, which are otherwise unattainable in disordered materials. Finally, we discuss potential directions for both the fundamental understanding and practical applications of confined self-assembly.

Memristor-Based Artificial Chips

Memristors, promising nanoelectronic devices with in-memory resistive switching behavior that is assembled with a physically integrated core processing unit (CPU) and memory unit and even possesses highly possible multistate electrical behavior, could avoid the von Neumann bottleneck of traditional computing devices and show a highly efficient ability of parallel computation and high information storage. These advantages position them as potential candidates for future data-centric computing requirements and add remarkable vigor to the research of next-generation artificial intelligence (AI) systems, particularly those that involve brain-like intelligence applications. This work provides an overview of the evolution of memristor-based devices, from their initial use in creating artificial synapses and neural networks to their application in developing advanced AI systems and brain-like chips. It offers a broad perspective of the key device primitives enabling their special applications from the view of materials, nanostructure, and mechanism models. We highlight these demonstrations of memristor-based nanoelectronic devices that have potential for use in the field of brain-like AI, point out the existing challenges of memristor-based nanodevices toward brain-like chips, and propose the guiding principle and promising outlook for future device promotion and system optimization in the biomedical AI field.

Multistate structures in a hydrogen-bonded polycatenation non-covalent organic framework with diverse resistive switching behaviors

The inherent structural flexibility and reversibility of non-covalent organic frameworks have enabled them to exhibit switchable multistate structures under external stimuli, providing great potential in the field of resistive switching (RS), but not well explored yet. Herein, we report the 0D+1D hydrogen-bonded polycatenation non-covalent organic framework (HOF-FJU-52), exhibiting diverse and reversible RS behaviors with the high performance. Triggered by the external stimulus of electrical field E at room temperature, HOF-FJU-52 has excellent resistive random-access memory (RRAM) behaviors, comparable to the state-of-the-art materials. When cooling down below 200 K, it was transferred to write-once-read-many-times memory (WORM) behaviors. The two memory behaviors exhibit reversibility on a single crystal device through the temperature changes. The RS mechanism of this non-covalent organic framework has been deciphered at the atomic level by the detailed single-crystal X-ray diffraction analyses, demonstrating that the structural dual-flexibility both in the asymmetric hydrogen bonded dimers within the 0D loops and in the infinite π-π stacking column between the loops and chains contribute to reversible structure transformations between multi-states and thus to its dual RS behaviors.

Two-Dimensional Conjugated Polymers: a New Choice For Organic Thin-Film Transistors

Organic thin-film transistors (OTFTs) as a vital component among transistors have shown great potential in smart sensing, flexible displays, and bionics due to their flexibility, biocompatibility and customizable chemical structures. Even though linear conjugated polymer semiconductors are common for constructing channel materials of OTFTs, advanced materials with high charge carrier mobility, tunable band structure, robust stability, and clear structure-property relationship are indispensable for propelling the evolution of OTFTs. Two-dimensional conjugated polymers (2DCPs), featured with conjugated lattice, tailorable skeletons, and functional porous structures, match aforementioned criteria closely. In this review, we firstly introduce the synthesis of 2DCP thin films, focusing on their characteristics compatible with the channels of OTFTs. Subsequently, the physics and operating mechanisms of OTFTs and the applications of 2DCPs in OTFTs are summarized in detail. Finally, the outlook and perspective in the field of OTFTs using 2DCPs are provided as well.

Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory

Facing the era of information explosion and the advent of artificial intelligence, there is a growing demand for information technologies with huge storage capacity and efficient computer processing. However, traditional silicon-based storage and computing technology will reach their limits and cannot meet the post-Moore information storage requirements of ultrasmall size, ultrahigh density, flexibility, biocompatibility, and recyclability. As a response to these concerns, polymer-based resistive memory materials have emerged as promising candidates for next-generation information storage and neuromorphic computing applications, with the advantages of easy molecular design, volatile and non-volatile storage, flexibility, and facile fabrication. Herein, we first summarize the memory device structures, memory effects, and memory mechanisms of polymers. Then, the recent advances in polymer resistive switching materials, including single-component polymers, polymer mixtures, 2D covalent polymers, and biomacromolecules for resistive memory devices, are highlighted. Finally, the challenges and future prospects of polymer memory materials and devices are discussed. Advances in polymer-based memristors will open new avenues in the design and integration of high-performance switching devices and facilitate their application in future information technology.

Porous crystalline materials for memories and neuromorphic computing systems

Porous crystalline materials usually include metal-organic frameworks (MOFs), covalent organic frameworks (COFs), hydrogen-bonded organic frameworks (HOFs) and zeolites, which exhibit exceptional porosity and structural/composition designability, promoting the increasing attention in memory and neuromorphic computing systems in the last decade. From both the perspective of materials and devices, it is crucial to provide a comprehensive and timely summary of the applications of porous crystalline materials in memory and neuromorphic computing systems to guide future research endeavors. Moreover, the utilization of porous crystalline materials in electronics necessitates a shift from powder synthesis to high-quality film preparation to ensure high device performance. This review highlights the strategies for preparing porous crystalline materials films and discusses their advancements in memory and neuromorphic electronics. It also provides a detailed comparative analysis and presents the existing challenges and future research directions, which can attract the experts from various fields (e.g., materials scientists, chemists, and engineers) with the aim of promoting the applications of porous crystalline materials in memory and neuromorphic computing systems.

Covalent Organic Frameworks for Neuromorphic Devices

Neuromorphic computing could enable the potential to break the inherent limitations of conventional von Neumann architectures, which has led to widespread research interest in developing novel neuromorphic memory devices, such as memristors and bioinspired artificial synaptic devices. Covalent organic frameworks (COFs), as crystalline porous polymers, have tailorable skeletons and pores, providing unique platforms for the interplay with photons, excitons, electrons, holes, ions, spins, and molecules. Such features encourage the rising research interest in COF materials in neuromorphic electronics. To develop high-performance COF-based neuromorphic memory devices, it is necessary to comprehensively understand materials, devices, and applications. Therefore, this Perspective focuses on discussing the use of COF materials for neuromorphic memory devices in terms of molecular design, thin-film processing, and neuromorphic applications. Finally, we provide an outlook for future directions and potential applications of COF-based neuromorphic electronics.