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Yan W, Liu A, Luo Y, Chen Z, Wu G, Chen J, Huang Q, Yang Y, Ye M, Guo W. A Highly Sensitive and Stretchable Core-Shell Fiber Sensor for Gesture Recognition and Surface Pressure Distribution Monitoring. Macromol Rapid Commun 2024; 45:e2400109. [PMID: 38594026 DOI: 10.1002/marc.202400109] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/24/2024] [Revised: 04/04/2024] [Indexed: 04/11/2024]
Abstract
This work reports a highly-strain flexible fiber sensor with a core-shell structure utilizes a unique swelling diffusion technique to infiltrate carbon nanotubes (CNTs) into the surface layer of Ecoflex fibers. Compared with traditional blended Ecoflex/CNTs fibers, this manufacturing process ensures that the sensor maintains the mechanical properties (923% strain) of the Ecoflex fiber while also improving sensitivity (gauge factor is up to 3716). By adjusting the penetration time during fabrication, the sensor can be customized for different uses. As an application demonstration, the fiber sensor is integrated into the glove to develop a wearable gesture language recognition system with high sensitivity and precision. Additionally, the authors successfully monitor the pressure distribution on the curved surface of a soccer ball by winding the fiber sensor along the ball's surface.
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Affiliation(s)
- Weizhe Yan
- Research Institute for Biomimetics and Soft Matter, Fujian Provincial Key Laboratory for Soft Functional Materials Research, Department of Physics, Xiamen University, Xiamen, 361005, P. R. China
- Jiujiang Research Institute, Xiamen University, Jiujiang, 332000, P. R. China
| | - Andeng Liu
- Research Institute for Biomimetics and Soft Matter, Fujian Provincial Key Laboratory for Soft Functional Materials Research, Department of Physics, Xiamen University, Xiamen, 361005, P. R. China
- Jiujiang Research Institute, Xiamen University, Jiujiang, 332000, P. R. China
| | - Yingjin Luo
- Research Institute for Biomimetics and Soft Matter, Fujian Provincial Key Laboratory for Soft Functional Materials Research, Department of Physics, Xiamen University, Xiamen, 361005, P. R. China
- Jiujiang Research Institute, Xiamen University, Jiujiang, 332000, P. R. China
| | - Zhuomin Chen
- Research Institute for Biomimetics and Soft Matter, Fujian Provincial Key Laboratory for Soft Functional Materials Research, Department of Physics, Xiamen University, Xiamen, 361005, P. R. China
| | - Guoxu Wu
- Research Institute for Biomimetics and Soft Matter, Fujian Provincial Key Laboratory for Soft Functional Materials Research, Department of Physics, Xiamen University, Xiamen, 361005, P. R. China
| | - Jianfeng Chen
- Research Institute for Biomimetics and Soft Matter, Fujian Provincial Key Laboratory for Soft Functional Materials Research, Department of Physics, Xiamen University, Xiamen, 361005, P. R. China
| | - Qiaoling Huang
- Research Institute for Biomimetics and Soft Matter, Fujian Provincial Key Laboratory for Soft Functional Materials Research, Department of Physics, Xiamen University, Xiamen, 361005, P. R. China
- Jiujiang Research Institute, Xiamen University, Jiujiang, 332000, P. R. China
| | - Yun Yang
- Research Institute for Biomimetics and Soft Matter, Fujian Provincial Key Laboratory for Soft Functional Materials Research, Department of Physics, Xiamen University, Xiamen, 361005, P. R. China
| | - Meidan Ye
- Research Institute for Biomimetics and Soft Matter, Fujian Provincial Key Laboratory for Soft Functional Materials Research, Department of Physics, Xiamen University, Xiamen, 361005, P. R. China
| | - Wenxi Guo
- Research Institute for Biomimetics and Soft Matter, Fujian Provincial Key Laboratory for Soft Functional Materials Research, Department of Physics, Xiamen University, Xiamen, 361005, P. R. China
- Jiujiang Research Institute, Xiamen University, Jiujiang, 332000, P. R. China
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2
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Peng H, Liu T, Zhao Y, Li L, Du P, Li H, Yan F, Zhai T. Ultrahigh Responsivity and Robust Semiconducting Fiber Enabled by Molecular Soldering-Governed Defect Engineering for Smart Textile Optoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2406353. [PMID: 39049581 DOI: 10.1002/adma.202406353] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2024] [Revised: 06/18/2024] [Indexed: 07/27/2024]
Abstract
Semiconducting fibers (SCFs) are of significant interest to design next-generation wearable and comfortable optoelectronics that seamlessly integrate with textiles. However, the practical applications of current SCFs are always limited by poor optoelectronic performance and low mechanical robustness caused by uncontrollable multiscale structural defects. Herein, a versatile in situ molecular soldering-governed defect engineering strategy is proposed to construct ultrahigh responsivity and robust wet-spun MoS2 SCFs, by using a π-conjugated dithiolated molecule to simultaneously patch microscale sulfur vacancies within MoS2 nanosheets, diminish mesoscale interlayer voids/wrinkles, promote macroscale orientation, build long-range photoelectron percolation bridges, and provide n-doping effect. The derived MoS2 SCFs exhibit over two orders of magnitude higher responsivity (144.3 A W-1) than previously reported fiber photodetectors, 37.3-fold faster photoresponse speed (52 ms) than pristine counterpart, and remarkable bending robustness (retain 94.2% of the initial photocurrent after 50 000 bending-flattening cycles). Such superior robustness and photodetection capacity of MoS2 SCFs further enable large-scale weaving of reliable smart textile optoelectronic systems, such as direction-identifiable wireless light alarming system, modularized mechano-optical communication system, and indoor light-controlled IoT system. This work offers a universal strategy for the scalable production of mechanically robust and high-performance SCFs, opening up exciting possibilities for large-scale integration of wearable optoelectronics.
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Affiliation(s)
- Hongyun Peng
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Teng Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yinghe Zhao
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Liang Li
- Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Peipei Du
- Key Laboratory of Optoelectronic Chemical Materials and Devices (Ministry of Education), Flexible Display Materials and Technology Co-Innovation Centre of Hubei Province, School of Optoelectronic Materials & Technology, Jianghan University, Wuhan, 430056, R. R. China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Key Laboratory of Optoelectronic Chemical Materials and Devices (Ministry of Education), Flexible Display Materials and Technology Co-Innovation Centre of Hubei Province, School of Optoelectronic Materials & Technology, Jianghan University, Wuhan, 430056, R. R. China
| | - Feng Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Optics Valley Laboratory, Hubei, 430074, P. R. China
- Research Institute of Huazhong University of Science and Technology in Shenzhen, Shenzhen, 518057, P. R. China
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3
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Gabbett C, Kelly AG, Coleman E, Doolan L, Carey T, Synnatschke K, Liu S, Dawson A, O'Suilleabhain D, Munuera J, Caffrey E, Boland JB, Sofer Z, Ghosh G, Kinge S, Siebbeles LDA, Yadav N, Vij JK, Aslam MA, Matkovic A, Coleman JN. Understanding how junction resistances impact the conduction mechanism in nano-networks. Nat Commun 2024; 15:4517. [PMID: 38806479 PMCID: PMC11133347 DOI: 10.1038/s41467-024-48614-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Accepted: 05/02/2024] [Indexed: 05/30/2024] Open
Abstract
Networks of nanowires, nanotubes, and nanosheets are important for many applications in printed electronics. However, the network conductivity and mobility are usually limited by the resistance between the particles, often referred to as the junction resistance. Minimising the junction resistance has proven to be challenging, partly because it is difficult to measure. Here, we develop a simple model for electrical conduction in networks of 1D or 2D nanomaterials that allows us to extract junction and nanoparticle resistances from particle-size-dependent DC network resistivity data. We find junction resistances in porous networks to scale with nanoparticle resistivity and vary from 5 Ω for silver nanosheets to 24 GΩ for WS2 nanosheets. Moreover, our model allows junction and nanoparticle resistances to be obtained simultaneously from AC impedance spectra of semiconducting nanosheet networks. Through our model, we use the impedance data to directly link the high mobility of aligned networks of electrochemically exfoliated MoS2 nanosheets (≈ 7 cm2 V-1 s-1) to low junction resistances of ∼2.3 MΩ. Temperature-dependent impedance measurements also allow us to comprehensively investigate transport mechanisms within the network and quantitatively differentiate intra-nanosheet phonon-limited bandlike transport from inter-nanosheet hopping.
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Affiliation(s)
- Cian Gabbett
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Adam G Kelly
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
- i3N/CENIMAT, Faculty of Science and Technology, Universidade NOVA de Lisboa, Campus de Caparica, 2829-516, Caparica, Portugal
| | - Emmet Coleman
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Luke Doolan
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Tian Carey
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Kevin Synnatschke
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Shixin Liu
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Anthony Dawson
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Domhnall O'Suilleabhain
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Jose Munuera
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
- Department of Physics, Faculty of Sciences, University of Oviedo, C/ Leopoldo Calvo Sotelo, 18, 33007, Oviedo, Asturias, Spain
| | - Eoin Caffrey
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - John B Boland
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - Goutam Ghosh
- Chemical Engineering Department, Delft University of Technology, Van der Maasweg 9, NL-2629, HZ, Delft, The Netherlands
| | - Sachin Kinge
- Materials Research & Development, Toyota Motor Europe, B1930, Zaventem, Belgium
| | - Laurens D A Siebbeles
- Chemical Engineering Department, Delft University of Technology, Van der Maasweg 9, NL-2629, HZ, Delft, The Netherlands
| | - Neelam Yadav
- Department of Electronic & Electrical Engineering, Trinity College Dublin 2, Dublin 2, Ireland
| | - Jagdish K Vij
- Department of Electronic & Electrical Engineering, Trinity College Dublin 2, Dublin 2, Ireland
| | - Muhammad Awais Aslam
- Chair of Physics, Department Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700, Leoben, Austria
| | - Aleksandar Matkovic
- Chair of Physics, Department Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700, Leoben, Austria
| | - Jonathan N Coleman
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland.
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4
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Li Z, Bretscher H, Rao A. Chemical passivation of 2D transition metal dichalcogenides: strategies, mechanisms, and prospects for optoelectronic applications. NANOSCALE 2024; 16:9728-9741. [PMID: 38700268 DOI: 10.1039/d3nr06296a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2024]
Abstract
The interest in obtaining high-quality monolayer transition metal dichalcogenides (TMDs) for optoelectronic device applications has been growing dramatically. However, the prevalence of defects and unwanted doping in these materials remain challenges, as they both limit optical properties and device performance. Surface chemical treatments of monolayer TMDs have been effective in improving their photoluminescence yield and charge transport properties. In this scenario, a systematic understanding of the underlying mechanism of chemical treatments will lead to a rational design of passivation strategies in future research, ultimately taking a step toward practical optoelectronic applications. We will therefore describe in this mini-review the strategies, progress, mechanisms, and prospects of chemical treatments to passivate and improve the optoelectronic properties of TMDs.
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Affiliation(s)
- Zhaojun Li
- Solid State Physics, Department of Materials Science and Engineering, Uppsala University, 75103 Uppsala, Sweden.
| | - Hope Bretscher
- The Max Planck Institute for the Structure and Dynamics of Matter, 22761, Hamburg, Germany
| | - Akshay Rao
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, CB3 0HE, Cambridge, UK
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5
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Dai Y, He Q, Huang Y, Duan X, Lin Z. Solution-Processable and Printable Two-Dimensional Transition Metal Dichalcogenide Inks. Chem Rev 2024; 124:5795-5845. [PMID: 38639932 DOI: 10.1021/acs.chemrev.3c00791] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/20/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) with layered crystal structures have been attracting enormous research interest for their atomic thickness, mechanical flexibility, and excellent electronic/optoelectronic properties for applications in diverse technological areas. Solution-processable 2D TMD inks are promising for large-scale production of functional thin films at an affordable cost, using high-throughput solution-based processing techniques such as printing and roll-to-roll fabrications. This paper provides a comprehensive review of the chemical synthesis of solution-processable and printable 2D TMD ink materials and the subsequent assembly into thin films for diverse applications. We start with the chemical principles and protocols of various synthesis methods for 2D TMD nanosheet crystals in the solution phase. The solution-based techniques for depositing ink materials into solid-state thin films are discussed. Then, we review the applications of these solution-processable thin films in diverse technological areas including electronics, optoelectronics, and others. To conclude, a summary of the key scientific/technical challenges and future research opportunities of solution-processable TMD inks is provided.
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Affiliation(s)
- Yongping Dai
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing 100084, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 99907, China
| | - Yu Huang
- Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Zhaoyang Lin
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing 100084, China
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6
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Sinnott AD, Kelly A, Gabbett C, Munuera J, Doolan L, Möbius M, Ippolito S, Samorì P, Coleman JN, Cross GLW. Mechanical Properties of Conducting Printed Nanosheet Network Thin Films Under Uniaxial Compression. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306954. [PMID: 37812735 DOI: 10.1002/adma.202306954] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Revised: 09/17/2023] [Indexed: 10/11/2023]
Abstract
Thin film networks of solution processed nanosheets show remarkable promise for use in a broad range of applications including strain sensors, energy storage, printed devices, textile electronics, and more. While it is known that their electronic properties rely heavily on their morphology, little is known of their mechanical nature, a glaring omission given the effect mechanical deformation has on the morphology of porous systems and the promise of mechanical post processing for tailored properties. Here, this work employs a recent advance in thin film mechanical testing called the Layer Compression Test to perform the first in situ analysis of printed nanosheet network compression. Due to the well-defined deformation geometry of this unique test, this work is able to explore the out-of-plane elastic, plastic, and creep deformation in these systems, extracting properties of elastic modulus, plastic yield, viscoelasticity, tensile failure and sheet bending vs. slippage under both out of plane uniaxial compression and tension. This work characterizes these for a range of networks of differing porosities and sheet sizes, for low and high compression, as well as the effect of chemical cross linking. This work explores graphene and MoS2 networks, from which the results can be extended to printed nanosheet networks as a whole.
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Affiliation(s)
- Aaron D Sinnott
- Trinity College Dublin, CRANN, 43 Pearse St, Dublin 2, D02 W085, Ireland
| | - Adam Kelly
- Trinity College Dublin, CRANN, 43 Pearse St, Dublin 2, D02 W085, Ireland
| | - Cian Gabbett
- Trinity College Dublin, CRANN, 43 Pearse St, Dublin 2, D02 W085, Ireland
| | - Jose Munuera
- Trinity College Dublin, CRANN, 43 Pearse St, Dublin 2, D02 W085, Ireland
| | - Luke Doolan
- Trinity College Dublin, CRANN, 43 Pearse St, Dublin 2, D02 W085, Ireland
| | - Matthias Möbius
- Trinity College Dublin, CRANN, 43 Pearse St, Dublin 2, D02 W085, Ireland
| | - Stefano Ippolito
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 Alleé Gaspard Monge, Strasbourg, F-67000, France
| | - Paolo Samorì
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 Alleé Gaspard Monge, Strasbourg, F-67000, France
| | - Jonathan N Coleman
- Trinity College Dublin, CRANN, 43 Pearse St, Dublin 2, D02 W085, Ireland
| | - Graham L W Cross
- Trinity College Dublin, CRANN, 43 Pearse St, Dublin 2, D02 W085, Ireland
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7
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Apostol P, Gali SM, Su A, Tie D, Zhang Y, Pal S, Lin X, Bakuru VR, Rambabu D, Beljonne D, Dincă M, Vlad A. Controlling Charge Transport in 2D Conductive MOFs─The Role of Nitrogen-Rich Ligands and Chemical Functionality. J Am Chem Soc 2023; 145. [PMID: 37921430 PMCID: PMC10655089 DOI: 10.1021/jacs.3c07503] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Revised: 10/12/2023] [Accepted: 10/14/2023] [Indexed: 11/04/2023]
Abstract
Two-dimensional electrically conducting metal-organic frameworks (2D-e-MOFs) have emerged as a class of highly promising functional materials for a wide range of applications. However, despite the significant recent advances in 2D-e-MOFs, developing systems that can be postsynthetically chemically functionalized, while also allowing fine-tuning of the transport properties, remains challenging. Herein, we report two isostructural 2D-e-MOFs: Ni3(HITAT)2 and Ni3(HITBim)2 based on two new 3-fold symmetric ligands: 2,3,7,8,12,13-hexaaminotriazatruxene (HATAT) and 2,3,8,9,14,15-hexaaminotribenzimidazole (HATBim), respectively, with reactive sites for postfunctionalization. Ni3(HITAT)2 and Ni3(HITBim)2 exhibit temperature-activated charge transport, with bulk conductivity values of 44 and 0.5 mS cm-1, respectively. Density functional theory analysis attributes the difference to disparities in the electron density distribution within the parent ligands: nitrogen-rich HATBim exhibits localized electron density and a notably lower lowest unoccupied molecular orbital (LUMO) energy relative to HATAT. Precise amounts of methanesulfonyl groups are covalently bonded to the N-H indole moiety within the Ni3(HITAT)2 framework, modulating the electrical conductivity by a factor of ∼20. These results provide a blueprint for the design of porous functional materials with tunable chemical functionality and electrical response.
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Affiliation(s)
- Petru Apostol
- Institute
of Condensed Matter and Nanosciences, Molecular Chemistry, Materials
and Catalysis, Université Catholique
de Louvain, Louvain-la-Neuve B-1348, Belgium
| | - Sai Manoj Gali
- Laboratory
for Chemistry of Novel Materials, Materials Research Institute, Université de Mons, Place du Parc 20, Mons 7000, Belgium
| | - Alice Su
- Department
of Chemistry, Massachusetts Institute of
Technology, Cambridge, Massachusetts 02139-4307, United States
| | - Da Tie
- Institute
of Condensed Matter and Nanosciences, Molecular Chemistry, Materials
and Catalysis, Université Catholique
de Louvain, Louvain-la-Neuve B-1348, Belgium
| | - Yan Zhang
- Institute
of Condensed Matter and Nanosciences, Molecular Chemistry, Materials
and Catalysis, Université Catholique
de Louvain, Louvain-la-Neuve B-1348, Belgium
| | - Shubhadeep Pal
- Institute
of Condensed Matter and Nanosciences, Molecular Chemistry, Materials
and Catalysis, Université Catholique
de Louvain, Louvain-la-Neuve B-1348, Belgium
| | - Xiaodong Lin
- Institute
of Condensed Matter and Nanosciences, Molecular Chemistry, Materials
and Catalysis, Université Catholique
de Louvain, Louvain-la-Neuve B-1348, Belgium
| | - Vasudeva Rao Bakuru
- Institute
of Condensed Matter and Nanosciences, Molecular Chemistry, Materials
and Catalysis, Université Catholique
de Louvain, Louvain-la-Neuve B-1348, Belgium
| | - Darsi Rambabu
- Institute
of Condensed Matter and Nanosciences, Molecular Chemistry, Materials
and Catalysis, Université Catholique
de Louvain, Louvain-la-Neuve B-1348, Belgium
| | - David Beljonne
- Laboratory
for Chemistry of Novel Materials, Materials Research Institute, Université de Mons, Place du Parc 20, Mons 7000, Belgium
| | - Mircea Dincă
- Department
of Chemistry, Massachusetts Institute of
Technology, Cambridge, Massachusetts 02139-4307, United States
| | - Alexandru Vlad
- Institute
of Condensed Matter and Nanosciences, Molecular Chemistry, Materials
and Catalysis, Université Catholique
de Louvain, Louvain-la-Neuve B-1348, Belgium
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8
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Lee GS, Kim JG, Kim JT, Lee CW, Cha S, Choi GB, Lim J, Padmajan Sasikala S, Kim SO. 2D Materials Beyond Post-AI Era: Smart Fibers, Soft Robotics, and Single Atom Catalysts. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2307689. [PMID: 37777874 DOI: 10.1002/adma.202307689] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2023] [Revised: 09/18/2023] [Indexed: 10/02/2023]
Abstract
Recent consecutive discoveries of various 2D materials have triggered significant scientific and technological interests owing to their exceptional material properties, originally stemming from 2D confined geometry. Ever-expanding library of 2D materials can provide ideal solutions to critical challenges facing in current technological trend of the fourth industrial revolution. Moreover, chemical modification of 2D materials to customize their physical/chemical properties can satisfy the broad spectrum of different specific requirements across diverse application areas. This review focuses on three particular emerging application areas of 2D materials: smart fibers, soft robotics, and single atom catalysts (SACs), which hold immense potentials for academic and technological advancements in the post-artificial intelligence (AI) era. Smart fibers showcase unconventional functionalities including healthcare/environmental monitoring, energy storage/harvesting, and antipathogenic protection in the forms of wearable fibers and textiles. Soft robotics aligns with future trend to overcome longstanding limitations of hard-material based mechanics by introducing soft actuators and sensors. SACs are widely useful in energy storage/conversion and environmental management, principally contributing to low carbon footprint for sustainable post-AI era. Significance and unique values of 2D materials in these emerging applications are highlighted, where the research group has devoted research efforts for more than a decade.
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Affiliation(s)
- Gang San Lee
- National Creative Research Initiative Center for Multi-Dimensional Directed Nanoscale Assembly, Department of Materials Science and Engineering, KAIST, Daejeon, 34141, Republic of Korea
- KAIST Institute for Nanocentry, KAIST, Daejeon, 34141, Republic of Korea
| | - Jin Goo Kim
- National Creative Research Initiative Center for Multi-Dimensional Directed Nanoscale Assembly, Department of Materials Science and Engineering, KAIST, Daejeon, 34141, Republic of Korea
- KAIST Institute for Nanocentry, KAIST, Daejeon, 34141, Republic of Korea
| | - Jun Tae Kim
- National Creative Research Initiative Center for Multi-Dimensional Directed Nanoscale Assembly, Department of Materials Science and Engineering, KAIST, Daejeon, 34141, Republic of Korea
- KAIST Institute for Nanocentry, KAIST, Daejeon, 34141, Republic of Korea
| | - Chan Woo Lee
- National Creative Research Initiative Center for Multi-Dimensional Directed Nanoscale Assembly, Department of Materials Science and Engineering, KAIST, Daejeon, 34141, Republic of Korea
- KAIST Institute for Nanocentry, KAIST, Daejeon, 34141, Republic of Korea
| | - Sujin Cha
- National Creative Research Initiative Center for Multi-Dimensional Directed Nanoscale Assembly, Department of Materials Science and Engineering, KAIST, Daejeon, 34141, Republic of Korea
- KAIST Institute for Nanocentry, KAIST, Daejeon, 34141, Republic of Korea
| | - Go Bong Choi
- National Creative Research Initiative Center for Multi-Dimensional Directed Nanoscale Assembly, Department of Materials Science and Engineering, KAIST, Daejeon, 34141, Republic of Korea
- KAIST Institute for Nanocentry, KAIST, Daejeon, 34141, Republic of Korea
| | - Joonwon Lim
- Department of Information Display, Kyung Hee University, Seoul, 02447, Republic of Korea
- KHU-KIST Department of Converging Science and Technology, Kyung Hee University, Seoul, 02447, Republic of Korea
| | - Suchithra Padmajan Sasikala
- National Creative Research Initiative Center for Multi-Dimensional Directed Nanoscale Assembly, Department of Materials Science and Engineering, KAIST, Daejeon, 34141, Republic of Korea
- KAIST Institute for Nanocentry, KAIST, Daejeon, 34141, Republic of Korea
| | - Sang Ouk Kim
- National Creative Research Initiative Center for Multi-Dimensional Directed Nanoscale Assembly, Department of Materials Science and Engineering, KAIST, Daejeon, 34141, Republic of Korea
- KAIST Institute for Nanocentry, KAIST, Daejeon, 34141, Republic of Korea
- Materials Creation, Seoul, 06179, Republic of Korea
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