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Huang CH, Cheng TY, Wu CY, Chen KH, Wu TL, Chou YC. Embedded Hybrid-Dimensional Heterointerface for Filament Modulation in 2D Material-Based Artificial Nociceptor. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2401946. [PMID: 39103304 DOI: 10.1002/advs.202401946] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2024] [Revised: 05/09/2024] [Indexed: 08/07/2024]
Abstract
Nociceptors are key sensory receptors that transmit warning signals to the central nervous system in response to painful stimuli. This fundamental process is emulated in an electronic device by developing a novel artificial nociceptor with an ultrathin, nonstoichiometric gallium oxide (GaOx)-silicon oxide heterostructure. A large-area 2D-GaOx film is printed on a substrate through liquid metal printing to facilitate the production of conductive filaments. This nociceptive structure exhibits a unique short-term temporal response following stimulation, enabling a facile demonstration of threshold-switching physics. The developed heterointerface 2D-GaOx film enables the fabrication of fast-switching, low-energy, and compliance-free 2D-GaOx nociceptors, as confirmed through experiments. The accumulation and extrusion of Ag in the oxide matrix are significant for inducing plastic changes in artificial biological sensors. High-resolution transmission electron microscopy and electron energy loss spectroscopy demonstrate that Ag clusters in the material dispersed under electrical bias and regrouped spontaneously when the bias is removed owing to interfacial energy minimization. Moreover, 2D nociceptors are stable; thus, heterointerface engineering can enable effective control of charge transfer in 2D heterostructural devices. Furthermore, the diffusive 2D-GaOx device and its Ag dynamics enable the direct emulation of biological nociceptors, marking an advancement in the hardware implementation of artificial human sensory systems.
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Affiliation(s)
- Chang-Hsun Huang
- Department of Materials Science and Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Te-Yu Cheng
- Institute of Physics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Chia-Yi Wu
- Department of Materials Science and Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Kuan-Hung Chen
- Department of Materials Science and Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Tian-Li Wu
- International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Yi-Chia Chou
- Department of Materials Science and Engineering, National Taiwan University, Taipei, 10617, Taiwan
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Kong X, Zong X, Lei Z, Wang Z, Zhao Y, Zhao X, Zhang J, Liu Z, Ren Y, Wu L, Zhang M, He F, Yang P. A Universal In-Situ Interfacial Growth Strategy for Various MXene-Based van der Waals Heterostructures with Uniform Heterointerfaces: The Efficient Conversion from 3D Composite to 2D Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2405174. [PMID: 39072996 DOI: 10.1002/smll.202405174] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2024] [Revised: 07/16/2024] [Indexed: 07/30/2024]
Abstract
Two-dimensional (2D) van der Waals heterostructures endow individual 2D material with the novel functional structures, intriguing compositions, and fantastic interfaces, which efficiently provide a feasible route to overcome the intrinsic limitations of single 2D components and embrace the distinct features of different materials. However, the construction of 2D heterostructures with uniform heterointerfaces still poses significant challenges. Herein, a universal in-situ interfacial growth strategy is designed to controllably prepare a series of MXene-based tin selenides/sulfides with 2D van der Waals homogeneous heterostructures. Molten salt etching by-products that are usually recognized as undesirable impurities, are reasonably utilized by us to efficiently transform into different 2D nanostructures via in-situ interfacial growth. The obtained MXene-based 2D heterostructures present sandwiched structures and lamellar interlacing networks with uniform heterointerfaces, which demonstrate the efficient conversion from 3D composite to 2D heterostructures. Such 2D heterostructures significantly enhance charge transfer efficiency, chemical reversibility, and overall structural stability in the electrochemical process. Taking 2D-SnSe2/MXene anode as a representative, it delivers outstanding lithium storage performance with large reversible capacities and ultrahigh capacity retention of over 97% after numerous cycles at 0.2, 1.0, and 10.0 A g-1 current density, which suggests its tremendous application potential in lithium-ion batteries.
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Affiliation(s)
- Xianglong Kong
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Xiaohang Zong
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Zijin Lei
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Zicong Wang
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Ying Zhao
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Xudong Zhao
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Junming Zhang
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Zhiliang Liu
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Yueming Ren
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Linzhi Wu
- College of Aerospace and Civil Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Milin Zhang
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Fei He
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Piaoping Yang
- College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
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Lim S, Kim TW, Park T, Heo YS, Yang S, Seo H, Suh J, Lee JU. Large-Scale Analysis of Defects in Atomically Thin Semiconductors using Hyperspectral Line Imaging. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2400737. [PMID: 38874112 DOI: 10.1002/smll.202400737] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2024] [Revised: 05/16/2024] [Indexed: 06/15/2024]
Abstract
Point defects play a crucial role in determining the properties of atomically thin semiconductors. This work demonstrates the controlled formation of different types of defects and their comprehensive optical characterization using hyperspectral line imaging (HSLI). Distinct optical responses are observed in monolayer semiconductors grown under different stoichiometries using metal-organic chemical vapor deposition. HSLI enables the simultaneous measurement of 400 spectra, allowing for statistical analysis of optical signatures at close to a centimeter scale. The study discovers that chalcogen-rich samples exhibit remarkable optical uniformity due to reduced precursor accumulation compared to the metal-rich case. The utilization of HSLI as a facile and reliable characterization tool pushes the boundaries of potential applications for atomically thin semiconductors in future devices.
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Affiliation(s)
- Seungjae Lim
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Tae Wan Kim
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Taejoon Park
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Yoon Seong Heo
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Seonguk Yang
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
- Department of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Hosung Seo
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Joonki Suh
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
- Department of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Jae-Ung Lee
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
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Liu L, Yu Q, Xia J, Shi W, Wang D, Wu J, Xie L, Chen Y, Jiao L. 2D Air-Stable Nonlayered Ferrimagnetic FeCr 2S 4 Crystals Synthesized via Chemical Vapor Deposition. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2401338. [PMID: 38506613 DOI: 10.1002/adma.202401338] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/25/2024] [Revised: 03/11/2024] [Indexed: 03/21/2024]
Abstract
The discovery of intrinsic 2D magnetic materials has opened up new opportunities for exploring magnetic properties at atomic layer thicknesses, presenting potential applications in spintronic devices. Here a new 2D ferrimagnetic crystal of nonlayered FeCr2S4 is synthesized with high phase purity using chemical vapor deposition. The obtained 2D FeCr2S4 exhibits perpendicular magnetic anisotropy, as evidenced by the out-of-plane/in-plane Hall effect and anisotropic magnetoresistance. Theoretical calculations further elucidate that the observed magnetic anisotropy can be attributed to its surface termination structure. By combining temperature-dependent magneto-transport and polarized Raman spectroscopy characterizations, it is discovered that both the measured Curie temperature and the critical temperature at which a low energy magnon peak disappeared remains constant, regardless of its thickness. Magnetic force microscopy measurements show the flipping process of magnetic domains. The exceptional air-stability of the 2D FeCr2S4 is also confirmed via Raman spectroscopy and Hall hysteresis loops. The robust anisotropic ferrimagnetism, the thickness-independent of Curie temperature, coupled with excellent air-stability, make 2D FeCr2S4 crystals highly attractive for future spintronic devices.
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Affiliation(s)
- Lei Liu
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Qin Yu
- Research Institute of Petroleum Processing, SINOPEC, Beijing, 100083, China
| | - Jing Xia
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 100049, China
| | - Wenxiao Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Dong Wang
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
- Laboratory of Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Juanxia Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yuansha Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Liying Jiao
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
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5
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Cao W, Lai D, Yang J, Liu L, Wu H, Wang J, Liu Y. Research Progress on the Preparation Methods for and Flame Retardant Mechanism of Black Phosphorus and Black Phosphorus Nanosheets. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:892. [PMID: 38786848 PMCID: PMC11124063 DOI: 10.3390/nano14100892] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/23/2024] [Revised: 05/09/2024] [Accepted: 05/10/2024] [Indexed: 05/25/2024]
Abstract
Black phosphorus and black phosphorus nanosheets are widely used in the flame retardant field because of their excellent properties, but the immature preparation methods have resulted in extremely high preparation cost, which greatly limits their development and application. In this paper, various preparation methods of black phosphorus and black phosphorus nanosheets are described in detail, the advantages and disadvantages of each method are analyzed in depth, the flame-retardant mechanism and application of black phosphorus and black phosphorus nanosheets in flame retardants are discussed, and the subsequent development direction of black phosphorus and black phosphorus nanosheets is proposed.
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Affiliation(s)
- Wuyan Cao
- Key Laboratory of Advanced Packaging Materials and Technology of Hunan Province, Hunan University of Technology, Zhuzhou 412007, China; (W.C.); (L.L.); (H.W.); (Y.L.)
| | - Dengwang Lai
- Key Laboratory of Advanced Packaging Materials and Technology of Hunan Province, Hunan University of Technology, Zhuzhou 412007, China; (W.C.); (L.L.); (H.W.); (Y.L.)
| | - Jun Yang
- Zhuzhou Times New Material Technology Co., Ltd., Zhuzhou 412007, China;
| | - Li Liu
- Key Laboratory of Advanced Packaging Materials and Technology of Hunan Province, Hunan University of Technology, Zhuzhou 412007, China; (W.C.); (L.L.); (H.W.); (Y.L.)
| | - Hao Wu
- Key Laboratory of Advanced Packaging Materials and Technology of Hunan Province, Hunan University of Technology, Zhuzhou 412007, China; (W.C.); (L.L.); (H.W.); (Y.L.)
| | - Jin Wang
- Zhuzhou Times New Material Technology Co., Ltd., Zhuzhou 412007, China;
| | - Yuejun Liu
- Key Laboratory of Advanced Packaging Materials and Technology of Hunan Province, Hunan University of Technology, Zhuzhou 412007, China; (W.C.); (L.L.); (H.W.); (Y.L.)
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Shi X, Liu C, Zhang X, Zhan G, Cai Y, Zhou D, Zhao Y, Wang N, Hu F, Wang X, Ma H, Wang L. Vapor Phase Growth of Air-Stable Hybrid Perovskite FAPbBr 3 Single-Crystalline Nanosheets. NANO LETTERS 2024; 24:2299-2307. [PMID: 38334593 DOI: 10.1021/acs.nanolett.3c04604] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/10/2024]
Abstract
Organic-inorganic hybrid perovskites have attracted tremendous attention owing to their fascinating optoelectronic properties. However, their poor air stability seriously hinders practical applications, which becomes more serious with thickness down to the nanoscale. Here we report a one-step vapor phase growth of HC(NH2)2PbBr3 (FAPbBr3) single-crystalline nanosheets of tunable size up to 50 μm and thickness down to 20 nm. The FAPbBr3 nanosheets demonstrate high stability for over months of exposure to air with no degradation in surface roughness and photoluminescence efficiency. Besides, the FAPbBr3 photodetectors exhibit superior overall performance as compared to previous devices based on nonlayered perovskite nanosheets, such as an ultralow dark current of 24 pA, an ultrahigh responsivity of 1033 A/W, an external quantum efficiency over 3000%, a rapid response time around 25 ms, and a high on/off ratio of 104. This work provides a strategy to tackle the challenges of hybrid perovskites toward integrated optoelectronics with requirements of nanoscale thickness, high stability, and excellent performance.
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Affiliation(s)
- Xinyu Shi
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Chao Liu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Xiaomin Zhang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Guixiang Zhan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Yuxiao Cai
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Dawei Zhou
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Yuwei Zhao
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Nana Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Fengrui Hu
- School of Physics, College of Engineering and Applied Sciences, MOE Key Laboratory of Intelligent Optical Sensing and Manipulation, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Xiaoyong Wang
- School of Physics, College of Engineering and Applied Sciences, MOE Key Laboratory of Intelligent Optical Sensing and Manipulation, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Huifang Ma
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
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Momeni K, Sakib N, Figueroa DEC, Paul S, Chen CY, Lin YC, Robinson JA. Combined Experimental and Computational Insight into the Role of Substrate in the Synthesis of Two-Dimensional WSe 2. ACS APPLIED MATERIALS & INTERFACES 2024; 16:6644-6652. [PMID: 38264996 DOI: 10.1021/acsami.3c16761] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/25/2024]
Abstract
Synthesis of large-area transition-metal dichalcogenides (TMDs) with controlled orientation is a significant challenge to their industrial applications. Substrate plays a vital role in determining the final quality of monolayer materials grown via the chemical vapor deposition process by controlling their orientation, crystal structure, and grain boundary. This study determined the binding energy and equilibrium distance for tungsten diselenide (WSe2) monolayers on crystalline and amorphous silicon dioxide and aluminum dioxide substrates. Differently oriented WSe2 monolayers are considered to investigate the role of the substrate in the orientation, binding strength, and equilibrium distance. This study can pave the way to synthesizing high-quality two-dimensional (2D) materials for electronic and chemical applications.
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Affiliation(s)
- Kasra Momeni
- Department of Mechanical Engineering, The University of Alabama, Tuscaloosa, Alabama 35487, United States
| | - Nuruzzaman Sakib
- Department of Mechanical Engineering, The University of Alabama, Tuscaloosa, Alabama 35487, United States
| | - Daniel E Cintron Figueroa
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Shiddartha Paul
- Department of Mechanical Engineering, The University of Alabama, Tuscaloosa, Alabama 35487, United States
- Department of Mechanical Engineering, The University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Cindy Y Chen
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsin-Chu 30010, Taiwan
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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Cao X, Zhou R, Xiong Y, Du G, Feng Z, Pan Q, Chen Y, Ji H, Ni Z, Lu J, Hu H, You Y. Volume-Confined Fabrication of Large-Scale Single-Crystalline Molecular Ferroelectric Thin Films and Their Applications in 2D Materials. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305016. [PMID: 38037482 PMCID: PMC10811469 DOI: 10.1002/advs.202305016] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 10/23/2023] [Indexed: 12/02/2023]
Abstract
With outstanding advantages of chemical synthesis, structural diversity, and mechanical flexibility, molecular ferroelectrics have attracted increasing attention, demonstrating themselves as promising candidates for next-generation wearable electronics and flexible devices in the film form. However, it remains a challenge to grow high-quality thin films of molecular ferroelectrics. To address the above issue, a volume-confined method is utilized to achieve ultrasmooth single-crystal molecular ferroelectric thin films at the sub-centimeter scale, with the thickness controlled in the range of 100-1000 nm. More importantly, the preparation method is applicable to most molecular ferroelectrics and has no dependency on substrates, showing excellent reproducibility and universality. To demonstrate the application potential, two-dimensional (2D) transitional metal dichalcogenide semiconductor/molecular ferroelectric heterostructures are prepared and investigated by optical spectroscopic method, proving the possibility of integrating molecular ferroelectrics with 2D layered materials. These results may unlock the potential for preparing and developing high-performance devices based on molecular ferroelectric thin films.
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Affiliation(s)
- Xiao‐Xing Cao
- Jiangsu Key Laboratory for Science and Applications of Molecular FerroelectricsSoutheast UniversityNanjing211189People's Republic of China
| | - Ru‐Jie Zhou
- Jiangsu Key Laboratory for Science and Applications of Molecular FerroelectricsSoutheast UniversityNanjing211189People's Republic of China
| | - Yu‐An Xiong
- Jiangsu Key Laboratory for Science and Applications of Molecular FerroelectricsSoutheast UniversityNanjing211189People's Republic of China
| | - Guo‐Wei Du
- Key Laboratory of Quantum Materials and Devices of Ministry of EducationSchool of PhysicsSoutheast UniversityNanjing211189People's Republic of China
| | - Zi‐Jie Feng
- Jiangsu Key Laboratory for Science and Applications of Molecular FerroelectricsSoutheast UniversityNanjing211189People's Republic of China
| | - Qiang Pan
- Jiangsu Key Laboratory for Science and Applications of Molecular FerroelectricsSoutheast UniversityNanjing211189People's Republic of China
| | - Yin‐Zhu Chen
- Key Laboratory of Quantum Materials and Devices of Ministry of EducationSchool of PhysicsSoutheast UniversityNanjing211189People's Republic of China
| | - Hao‐Ran Ji
- Jiangsu Key Laboratory for Science and Applications of Molecular FerroelectricsSoutheast UniversityNanjing211189People's Republic of China
| | - Zhenhua Ni
- Key Laboratory of Quantum Materials and Devices of Ministry of EducationSchool of PhysicsSoutheast UniversityNanjing211189People's Republic of China
| | - Junpeng Lu
- Key Laboratory of Quantum Materials and Devices of Ministry of EducationSchool of PhysicsSoutheast UniversityNanjing211189People's Republic of China
| | - Huihui Hu
- Jiangsu Key Laboratory for Science and Applications of Molecular FerroelectricsSoutheast UniversityNanjing211189People's Republic of China
| | - Yu‐Meng You
- Jiangsu Key Laboratory for Science and Applications of Molecular FerroelectricsSoutheast UniversityNanjing211189People's Republic of China
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