Recent Advances and Challenges of Colloidal Quantum Dot Light-Emitting Diodes for Display Applications

Investigation of the interaction mechanism and enzyme activity of trypsin with cerium oxide nanoparticles

In this study, the interaction mechanism and native conformational variation of trypsin (Try) affected by CeO2 nanoparticles (NPs) were systematically studied via various spectroscopic methods. The results of fluorescence spectroscopy revealed that CeO2 NPs markedly quenched the endogenous fluorescence of Try via the mechanism of static quenching. The main forces that contributed to the binding of Try and CeO2 NPs were van der Waals forces, hydrogen bonds, and electrostatic forces, as observed by the binding constants and significant thermodynamic characteristics of the two substances. The incorporation of CeO2 NPs lead to a slight change in the structure of Try, as shown by synchronized fluorescence spectroscopy, three-dimensional fluorescence spectroscopy and circular dichroism (CD) spectroscopy. Moreover, the enzyme activity of Try decreased with the addition of CeO2 NPs. This study is highly important for fully evaluating the use of CeO2 NPs in biomedical sciences and is helpful for clarifying the mechanism between Try and CeO2 NPs at the molecular level.

Direct Evidence of Excessive Charge-Carrier-Induced Degradation in InP Quantum-Dot Light-Emitting Diodes

The limited operational lifetime of quantum-dot light-emitting diodes (QLEDs) poses a critical obstacle that must be addressed before their practical application. Specifically, cadmium-free InP-based QLEDs, which are environmentally benign, experience significant operational degradation due to challenges in charge-carrier confinement stemming from the composition of InP quantum dots (QDs). This study investigates the operational degradation of InP QLEDs and provides direct evidence of the degradation process. To facilitate degradation studies, a double-emission structure was designed. We employed transient electroluminescence and photoluminescence for nondestructive analysis of charge-carrier dynamics during device degradation. The time-resolved emission sequence revealed changes in carrier mobility within the QD layer as devices degraded. Furthermore, prolonged exposure of QDs to the charge-carrier population hindered their radiative recombination. Our observations indicate clear evidence of QLED degradation, characterized by ligand detachment from the QD surface and deterioration of the hole-transporting material due to excessive electrons. This comprehensive analysis of degradation mechanisms in InP QLEDs lays the groundwork for improving operational stability and longevity, serving as a benchmark for future research and development in the field of nanocrystal-based electroluminescent devices.

Stable and Efficient Red InP-Based QLEDs through Surface Passivation Strategies of Quantum Dots

Indium phosphide (InP) is a representative of environmentally friendly quantum dots (QDs), and quantum dot light-emitting diodes (QLEDs) based on InP QDs are prime candidates for next-generation display applications. However, there are numerous nonradiative sites on the surface of InP QDs, which compromise the operational stability of QLEDs. Herein, we employed cysteamine (CTA) molecules for post-treatment of QD films, effectively passivating surface defects and nonradiative sites, thereby enhancing stability. This treatment enabled a long T95 lifetime of over 1,200 h at an initial luminance of 1,000 cd m-2. Additionally, CTA-treated QDs induced the formation of an interface dipole, elevating the energy levels of QDs and reducing the injection barrier for holes. Moreover, the dipole moment at the interface hindered electron injection, achieving a more balanced carrier injection in the device. Consequently, we achieved a peak external quantum efficiency (EQE) of 21.21%.

Spectrally Narrow Blue-Light Emission from Nonstoichiometric AgGaS2 Quantum Dots for Application to Light-Emitting Diodes

Luminescence color tuning of less toxic I-III-VI-based quantum dots (QDs) has been intensively investigated for application in wide-color-gamut displays. However, the emission peaks of these multinary QDs are relatively broad in the blue-light region compared to those in the green and red regions. Here, we report the synthesis of AgGaS2 (AGS) QDs that show a narrow blue emission peak through nonstoichiometry control and surface defect engineering. While as-prepared AGS QDs with angular shapes primarily exhibited a weak green photoluminescence (PL) peak at 520 nm assigned to defect-site emission, treatment with chloride ions resulted in the appearance of a sharp band-edge PL peak at 442 nm, with the number of surface defect sites decreasing as a result of rounding off the angles of the QD shape. Further coating of the QDs with a gallium sulfide (GaSx) shell selectively enhanced the band-edge PL peak at 446 nm with a narrow full width at half-maximum of 22 nm, where the defect-site emission was almost eliminated due to the removal of surface defect sites. The PL quantum yield (QY) significantly increased from 5.5% for chloride-treated AGS QDs to 12% for AGS core-GaSx shell QDs (AGS@GaSx). QD light-emitting diodes fabricated with AGS@GaSx QDs exhibited a sharp emission peak at 450 nm, slightly red-shifted from that of the PL spectrum of the QD films, accompanied by the reappearance of a weak broad defect-site emission peak at around 560 nm.

High Efficiency Ultra-Narrow Emission Quantum Dot Light-Emitting Diodes Enabled by Microcavity

A wide-color-gamut display enableby a narrow emission linewidth facilitates a visually immersive experience akin to the real world. Quantum dot light-emitting diodes (QLEDs) with excellent color purity and high efficiency hold great promise as future candidates for high-definition displays. However, most devices typically exhibit emission linewidths exceeding 20 nm, and lack a universal strategy for further enhancing the color purity. In this study, a planar microcavity structure for realizing ultra-narrow emissions is developed by incorporating a distributed Bragg reflector into normal electroluminescent devices. By leveraging the strong optical resonance effect derived from this microcavity structure, red QLEDs are successfully fabricated with an extraordinary full width at half maximum of 11 nm in the normal direction, beyond the BT.2020 color coordinates. The fabricated red-microcavity QLEDs exhibit a considerable enhancement in the external quantum efficiency, which increases from 28.2% to 35.6%, together with an extended operating lifetime. The strategy adopted herein will serve as an effective reference for achieving ultra-narrow emission and high-efficiency QLEDs.

Recent progresses and challenges in colloidal quantum dot light-emitting diodes: a focus on electron transport layers with metal oxide nanoparticles and organic semiconductors

Colloidal quantum dots (QDs) are highly promising for display technologies due to their distinctive optical characteristics, such as tunable emission wavelengths, narrow emission spectra, and superb photoluminescence quantum yields. Over the last decade, both academic and industrial research have substantially advanced quantum dot light-emitting diode (QLED) technology, primarily through the development of higher-quality QDs and more refined device structures. A key element of these advancements includes progress in the electron transport layer (ETL) technology, with metal oxide (MO) nanoparticles (NPs) like ZnO and ZnMgO emerging as superior choices due to their robust performance. Nevertheless, scalability challenges, such as particle agglomeration and positive aging, have prompted research into organic semiconductors that match the performance of MO NPs. This review aims to provide a detailed examination and comprehensive understanding of recent advances and challenges in ETLs based on both MO NPs and organic semiconductors, guiding future commercialization efforts for QLEDs.

Shortwave-Infrared Silver Chalcogenide Quantum Dots for Optoelectronic Devices

Silver chalcogenide (Ag2X, X = S, Se, Te) semiconductor quantum dots (QDs) have been extensively studied owing to their short-wave infrared (SWIR, 900-2500 nm) excitation and emission along with lower solubility product constant and environmentally benign nature. However, their unsatisfactory photoluminescence quantum yields (PLQYs) make it difficult to obtain optoelectronic devices with high performances. To tackle this challenge, researchers have made great efforts to develop valid strategies to improve the PLQYs of SWIR Ag2X QDs by suppressing their nonradiative recombination of excitons. In this Perspective, we summarize the significant approaches of heteroatom doping and surface passivation to enhance the PLQYs of SWIR Ag2X QDs, and we conclude their application in high-efficiency optoelectronic devices. Finally, we examine the future trends and promising opportunities of Ag2X QDs with regard to their optical properties and optoelectronics. We believe that this Perspective will serve as a valuable reference for future advancement in the synthesis and application of SWIR Ag2X QDs.

Optimizing QLED Performance and Stability via the Surface Modification of PEDOT:PSS Experimental Insights and DFT Calculations

The presence of the acidic and weak ionic conductor polystyrenesulfonate (PSS) in poly(3,4-ethylenedioxythiophene:PSS (PEDOT:PSS) leads to degradation and limits the charge transfer within quantum dot light-emitting diodes (QLEDs). Two-step solvent treatment resulted in a 40% reduction of PSS, which could be attributed to ethylene glycol (EG) attenuating the ionic interactions between PSS and PEDOT via interacting with PSS through hydrogen bonding. Methanol dissolved the predominant PSS and EG from the surface. The redshift of the peak representing the symmetrical vibration of Cα═Cβ in the Raman spectrum confirmed the conformation of benzoid structure to quinoid structure after the surface treatment. This conformation was attributed to the extension of the conjugation length and the reduction of the energy barrier within the PEDOT chain. This resulted in the improved conductivity and charge hopping of the PEDOT:PSS, which was also proven using density functional theory (DFT) calculations. Reducing the insulating and acidic PSS improved the electroluminescence performance and extended the operational lifetime of the QLEDs. The tris(dimethylamino)phosphine-based InP QLEDs exhibited an external quantum efficiency (EQE) of 6.4%, that value is comparable to those of tris(trimethylsilyl)phosphine-based QLEDs, and operational lifetime (T50) of 125.6 h.

Synaptic Feature of Quantum Dot Light-Emitting Diodes for Visualization of Learning Process

Brain-inspired electronics with synaptic functions hold significant promise for advancing artificial intelligent applications. In this study, we demonstrate the synaptic feature of quantum-dot light-emitting diodes (QLEDs), which can convert electrical pulses into synapse-like light signals (the brightness gradually increases as the electrical pulses are prolonged). These features are analogous to learning and forgetting in biological synapses. The enhancement of brightness can be attributed to the reduction of charge transfer from the quantum dots to ZnO electron transport layer and resistive switching effect. With an integrated complementary metal-oxide-semiconductor (CMOS) drive, arrayed synaptic QLEDs can simulate the visualization of brain-like learning processes, which can reduce the noise toward high image recognition rate (>95.0%) by deep neural networks. Our findings introduce a novel brain-inspired optoelectronic approach with potential applications in optical neuromorphic systems.

Interfacial Modification of ZnO/ZnMgO Bilayer for Efficient and Stable InP Quantum Dot Light-Emitting Diodes via Ultraviolet Ozone Treatment

The development of efficient charge transport layers is crucial for realizing high-performance and stable quantum dot light-emitting diodes (QD-LEDs). The use of a ZnO/ZnMgO bilayer as an electron transporting layer (ETL) has garnered considerable attention. This configuration leverages the high electron mobility of ZnO and the favorable surface state of ZnMgO. Furthermore, the versatility of this configuration extends to its wide range of thickness tunability, rendering it suitable for the construction of thick devices for top-emitting structures with microcavities. However, despite the promising attributes of this bilayer configuration, the impact of the ZnO/ZnMgO bilayer ETL interface on QD-LEDs performance remains largely unexplored. Thus, this study investigated the effect of ultraviolet ozone (UVO) treatment on the stabilization of the ZnO/ZnMgO interface. UVO treatment was found to significantly enhance luminance uniformity across the QD-LEDs emission area while improving operational stability by over 4-fold. Comprehensive analyses employing X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy confirmed that UVO treatment significantly reduced the defect states of the hydroxyl groups and removed the insulating native ethanolamine ligands, thereby facilitating improved and uniform electron transport. Moreover, the effectiveness of UVO treatment in enhancing electron transport was supported by impedance analyses. Therefore, this paper presents an effective approach for enhancing the interface of a highly potent ZnO/ZnMgO bilayer ETL, which can ultimately improve the luminance uniformity and stability of QD-LEDs.

A Novel Crosslinked Hole Transport Layer with Enhanced Charge Injection Balance for Highly Efficient Inkjet-Printed Blue Quantum Dot-Based Light-Emitting Diodes

In this work, an efficient and robust hole transport layer (HTL) based on blended poly((9,9-dioctylfluorenyl-2,7-diyl)-alt-(9-(2-ethylhexyl)-carbazole-3,6-diyl)) (PF8Cz) and crosslinkable 3,3'-(9,9-dimethyl-9H-fluorene-2,7-diyl)bis(9-(4-vinylphenyl)-9H-carbazole) (FLCZ-V) is introduced for high-performance and stable blue quantum dot-based light-emitting diodes (QLEDs), wherein FLCZ-V can in situ-crosslink to a continuous network polymer after thermal treatment and the linear polymer PF8CZ becomes intertwined and imprisoned. As a result, the blended HTL shows a high hole mobility (1.27 × 10-4 cm2 V-1 s-1) and gradient HOMO levels (-5.4 eV of PF8CZ and -5.7 eV of FLCZ-V) that can facilitate hole injecting so as to ameliorate the charge balance and, at the same time, achieve better electron-blocking capability that can effectively attenuate HTL decomposition. Meanwhile, the crosslinked blended HTL showed excellent solvent resistance and a high surface energy of 40.34 mN/m, which is favorable to enhance wettability for the deposition of a follow-up layer and attain better interfacial contact. Based on the blended HTL, blue QLEDs were fabricated by both spin-coating and inkjet printing. For the spin-coated blue QLED, a remarkable enhancement of external quantum efficiency (EQE) of 15.5% was achieved. Also, the EQE of the inkjet-printed blue QLED reached 9.2%, which is thus far the best result for the inkjet-printed blue QLED.

Tracing the electron transport behavior in quantum-dot light-emitting diodes via single photon counting technique

The electron injection and transport behavior are of vital importance to the performance of quantum-dot light-emitting diodes. By simultaneously measuring the electroluminescence-photoluminescence of the quantum-dot light-emitting diodes, we identify the presence of leakage electrons which leads to the discrepancy of the electroluminescence and the photoluminescence roll-off. To trace the transport paths of the leakage electrons, a single photon counting technique is developed. This technique enables us to detect the weak photon signals and thus provides a means to visualize the electron transport paths at different voltages. The results show that, the electrons, except those recombining within the quantum-dots, leak to the hole transport layer or recombine at the hole transport layer/quantum-dot interface, thus leading to the reduction of efficiency. By reducing the amount of leakage electrons, quantum-dot light-emitting diode with an internal power conversion efficiency of over 98% can be achieved.

Recent Progress of Quantum Dots Light-Emitting Diodes: Materials, Device Structures, and Display Applications

Colloidal quantum dots (QDs), as a class of 0D semiconductor materials, have generated widespread interest due to their adjustable band gap, exceptional color purity, near-unity quantum yield, and solution-processability. With decades of dedicated research, the potential applications of quantum dots have garnered significant recognition in both the academic and industrial communities. Furthermore, the related quantum dot light-emitting diodes (QLEDs) stand out as one of the most promising contenders for the next-generation display technologies. Although QD-based color conversion films are applied to improve the color gamut of existing display technologies, the broader application of QLED devices remains in its nascent stages, facing many challenges on the path to commercialization. This review encapsulates the historical discovery and subsequent research advancements in QD materials and their synthesis methods. Additionally, the working mechanisms and architectural design of QLED prototype devices are discussed. Furthermore, the review surveys the latest advancements of QLED devices within the display industry. The narrative concludes with an examination of the challenges and perspectives of QLED technology in the foreseeable future.

Solution-Processed Thick Hole-Transport Layer for Reliable Quantum-Dot Light-Emitting Diodes Based on an Alternatingly Doped Structure

The operating lifetime of quantum-dot light-emitting diodes (QLED) is a bottleneck for commercial display applications. To enhance the operational stability of QLEDs, we developed a robust solution-processed highly conductive hole-transport-layer (HTL) structure, which enables a thick HTL structure to mitigate the electric field. An alternating doping strategy, which involves multiple alternating stacks of N4,N4'-di(naphthalen-1-yl)-N4,N4'-bis(4-vinylphenyl)biphenyl-4,4'-diamine and phosphomolybdic acid layers, could provide significantly improved conductivity; more specifically, the 90 nm-thick alternatingly doped HTL exhibited higher conductivity than the 45 nm-thick undoped HTL. Therefore, when applied to a QLED, the increase in the thickness of the alternatingly doped HTL increased device reliability. As a result, the lifetime of the QLED with a thick, alternatingly doped HTL was 48-fold higher than that of the QLED with a thin undoped HTL. This alternating doping strategy provides a new paradigm for increasing the stability of solution-based optoelectronic devices in addition to QLEDs.

Utilizing a compact diamino-based ligand as a charge balancer in quantum dot light-emitting diodes

Charge imbalance within the emissive layer (EML) has been identified as a major obstacle to achieving high-performance quantum dot light-emitting diodes (QD-LEDs). To address this issue, we propose the use of a compact diamino-based ligand as a universal approach to improve the charge balance within the QD EML. Specifically, we treat QDs symmetrically with 1,4-diaminobutane (DAB) on both the bottom and top sides. This treatment simultaneously modulates the injection properties of electrons and holes, effectively suppressing electron injection into QDs while facilitating hole injection. As a result, QD-LEDs with symmetrical DAB treatment exhibit a 1.5-fold increase in external quantum efficiency and a remarkable 4.5-fold increase in device lifetime. These results highlight the role of the compact diamine-based ligands as highly efficient charge balancers to realize high-performance and highly stable QD-LEDs.

Strongly-confined colloidal lead-halide perovskite quantum dots: from synthesis to applications

Colloidal semiconductor nanocrystals enable the realization and exploitation of quantum phenomena in a controlled manner, and can be scaled up for commercial uses. These materials have become important for a wide range of applications, from ultrahigh definition displays, to solar cells, quantum computing, bioimaging, optical communications, and many more. Over the last decade, lead-halide perovskite nanocrystals have rapidly gained prominence as efficient semiconductors. Although the majority of studies have focused on large nanocrystals in the weak- to intermediate-confinement regime, quantum dots (QDs) in the strongly-confined regime (with sizes smaller than the Bohr diameter, which ranges from 4-12 nm for lead-halide perovskites) offer unique opportunities, including polarized light emission and color-pure, stable luminescence in the region that is unattainable by perovskites with single-halide compositions. In this tutorial review, we bring together the latest insights into this emerging and rapidly growing area, focusing on the synthesis, steady-state optical properties (including exciton fine-structure splitting), and transient kinetics (including hot carrier cooling) of strongly-confined perovskite QDs. We also discuss recent advances in their applications, including single photon emission for quantum technologies, as well as light-emitting diodes. We finish with our perspectives on future challenges and opportunities for strongly-confined QDs, particularly around improving the control over monodispersity and stability, important fundamental questions on the photophysics, and paths forward to improve the performance of perovskite QDs in light-emitting diodes.

Intrinsic Chiroptical Activity and Excitonic Properties of Group II-VI Magic-Size Clusters

Semiconductor magic-size clusters (MSCs), lying in the local minima of the potential landscape, are important intermediates that emerge during the synthesis of colloidal quantum dots. They have definite geometrical and electronic structures, thus serving as atomically precise building blocks for assembling supramolecular structures and devices with unprecedented functionalities. Here we report the intrinsic chiroptical activity in the magic-size cadmium and zinc chalcogenide clusters with magic numbers of 13, 33, and 34 possessing unique core-shell structures. They are responsive to circularly polarized light from the ultraviolet to visible region, with size-tunable energy gap, absorption wavelength, and excitonic characteristics. The origin of the chiroptical activity and the evolution of excitonic states with magic size are disclosed by time-dependent density functional theory calculations within a correlated electron-hole picture. This molecular-level understanding of the photophysical properties of group II-VI MSCs provides essential guidelines for utilizing them for chiral optoelectronics and photonics.

Recent Progress on Quantum Dot Patterning Technologies for Commercialization of QD-LEDs: Current Status, Future Prospects, and Exploratory Approaches

Colloidal quantum dots (QDs) are widely regarded as advanced emissive materials with significant potential for display applications owing to their excellent optical properties such as high color purity, near-unity photoluminescence quantum yield, and size-tunable emission color. Building upon these attractive attributes, QDs have successfully garnered attention in the display market as down-conversion luminophores and now venturing into the realm of self-emissive displays, exemplified by QD light-emitting diodes (QD-LEDs). However, despite these advancements, there remains a relatively limited body of research on QD patterning technologies, which are crucial prerequisites for the successful commercialization of QD-LEDs. Thus, in this review, an overview of the current status and prospects of QD patterning technologies to accelerate the commercialization of QD-LEDs is provided. Within this review, a comprehensive investigation of three prevailing patterning methods: optical lithography, transfer printing, and inkjet printing are conducted. Furthermore, several exploratory QD patterning techniques that offer distinct advantages are introduced. This study not only paves the way for successful commercialization but also extends the potential application of QD-LEDs into uncharted frontiers.

Controlled Growth of Large SiO2 Shells onto Semiconductor Colloidal Nanocrystals: A Pathway Toward Photonic Integration

The growth of SiO2 shells on semiconductor nanocrystals is an established procedure and it is widely employed to provide dispersibility in polar solvents, and increased stability or biocompatibility. However, to exploit this shell to integrate photonic components on semiconductor nanocrystals, the growth procedure must be finely tunable and able to reach large particle sizes (around 100 nm or above). Here, we demonstrate that these goals are achievable through a design of experiment approach. Indeed, the use of a sequential full-factorial design allows us to carefully tune the growth of SiO2 shells to large values while maintaining a reduced size dispersion. Moreover, we show that the growth of a dielectric shell alone can be beneficial in terms of emission efficiency for the nanocrystal. We also demonstrate that, according to our modeling, the subsequent growth of two shells with increasing refractive index leads to an improved emission efficiency already at a reduced SiO2 sphere radius.

Multi-Interfacial Confined Assembly of Colloidal Quantum Dots Quasisuperlattice Microcavities for High-Resolution Full-Color Microlaser Arrays

Colloidal quantum dots (CQDs) are considered a promising material for the next generation of integrated display devices due to their designable optical bandgap and low energy consumption. Owing to their dispersibility in solvents, CQD micro/nanostructures are generally fabricated by solution-processing methods. However, the random mass transfer in liquid restricts the programmable construction in macroscopy and ordered assembly in microscopy for the integration of CQD optical structures. Herein, a multi-interfacial confined assembly strategy is developed to fabricate CQDs programmable microstructure arrays with a quasisuperlattice configuration through controlling the dynamics of three-phase contact lines (TPCLs). The motion of TPCLs dominates the division of liquid film for precise positioning of CQD microstructures, while pinned TPCLs control the solvent evaporation and concentration gradient to directionally drive the mass transfer and packing of CQDs. Owing to their long-range order and adjustable structural dimensions, CQD microring arrays function as high-quality-factor (high-Q) lasing resonant cavities with low thresholds and tunable lasing emission modes. Through the further surface treatment and liquid dynamics control, the on-chip integration of red (R), green (G), and blue (B) multicomponent CQD microlaser arrays are demonstrated. The technique establishes a new route to fabricate large-area, ultrahigh-definition, and full-color CQD laser displays.

Perspectives on development of optoelectronic materials in artificial intelligence age

Optoelectronic devices, such as light-emitting diodes, have been demonstrated as one of the most demanded forthcoming display and lighting technologies because of their low cost, low power consumption, high brightness, and high contrast. The improvement of device performance relies on advances in precisely designing novelty functional materials, including light-emitting materials, hosts, hole/electron transport materials, and yet which is a time-consuming, laborious and resource-intensive task. Recently, machine learning (ML) has shown great prospects to accelerate material discovery and property enhancement. This review will summarize the workflow of ML in optoelectronic materials discovery, including data collection, feature engineering, model selection, model evaluation and model application. We highlight multiple recent applications of machine-learned potentials in various optoelectronic functional materials, ranging from semiconductor quantum dots (QDs) or perovskite QDs, organic molecules to carbon-based nanomaterials. We furthermore discuss the current challenges to fully realize the potential of ML-assisted materials design for optoelectronics applications. It is anticipated that this review will provide critical insights to inspire new exciting discoveries on ML-guided of high-performance optoelectronic devices with a combined effort from different disciplines.

Color Revolution: Prospects and Challenges of Quantum-Dot Light-Emitting Diode Display Technologies

Light-emitting diodes (LEDs) based on colloidal quantum-dots (QDs) such as CdSe, InP, and ZnSeTe feature a unique advantage of narrow emission linewidth of ≈20 nm, which can produce highly accurate colors, making them a highly promising technology for the realization of displays with Rec. 2020 color gamut. With the rapid development in the past decades, the performances of red and green QLEDs have been remarkably improved, and their efficiency and lifetime can almost meet industrial requirements. However, the industrialization of QLED displays still faces many challenges; for example, (1) the device mechanisms including the charge injection/transport/leakage, exciton quenching, and device degradation are still unclear, which fundamentally limit QLED performance improvement; (2) the blue performances including the efficiency, chromaticity, and stability are relatively low, which are still far from the requirements of practical applications; (3) the color patterning processes including the ink-jet printing, transfer printing, and photolithography are still immature, which restrict the manufacturing of high resolution full-color QLED displays. Here, the recent advancements attempting to address the above challenges of QLED displays are specifically reviewed. After a brief overview of QLED development history, device structure/principle, and performances, the main focus is to investigate the recent discoveries on device mechanisms with an emphasis on device degradation. Then recent progress is introduced in blue QLEDs and color patterning. Finally, the opportunities, challenges, solutions, and future research directions of QLED displays are summarized.

Colloidal quantum dot materials for next-generation near-infrared optoelectronics

Colloidal quantum dots (CQDs) are a promising class of materials for next-generation optoelectronic devices, such as displays, LEDs, lasers, photodetectors, and solar cells. CQDs can be obtained at low cost and in large quantities using wet chemistry. CQDs have also been produced using various materials, such as CdSe, InP, perovskites, PbS, PbSe, and InAs. Some of these CQD materials absorb and emit photons in the visible region, making them excellent candidates for displays and LEDs, while others interact with low-energy photons in the near-infrared (NIR) region and are intensively utilized in NIR lasers, NIR photodetectors, and solar cells. In this review, we have focused on NIR CQD materials and reviewed the development of CQD materials for solar cells, NIR lasers, and NIR photodetectors since the first set of reports on CQD materials in these particular applications.

Repercussions of the Inner Shell Layer on the Performance of Cd-Free Quantum Dots and Their Light-Emitting Diodes

Indium phosphide (InP) and zinc selenium tellurium (ZnSeTe) quantum dots (QDs) as less toxic alternatives have received substantial attention. The structure of QDs generally consists of a QD core, inner shell layer, and outer shell layer. We reckon that the inner shell layer, especially its components and thickness, have a significant influence on the optical and electronic performances of QDs. In this Perspective, we compare optical properties of these QDs with different inner shells and summarize how typical inner shell components and thickness influence their optical properties. The impact of the inner shell on the performance of QD light-emitting diodes (QLEDs) has also been discussed. The appropriate components and thickness of the inner shell both contribute to alleviate valence or lattice mismatch, thereby enhancing the performance of QDs. We expect that this Perspective could heighten awareness of the significance and impact of the inner shell layer in QDs and facilitate further development of QDs and QLEDs.

Wafer-scale patterning of high-resolution quantum dot films with a thickness over 10 μm for improved color conversion

Quantum dots (QDs) are promising color conversion materials for efficient full-color micro light-emitting diode (micro-LED) displays owing to their high color purity and wide color gamut. However, achieving high-resolution QD patterns with enough thickness for efficient color conversion is challenging. Here, we demonstrate a facile and compatible approach by combining replicate molding, plasma etching and transfer printing to produce QD patterns with a sufficient thickness over ten micrometers in a wide range of resolutions. Our technique can remarkably simplify the preparation of QD inks and minimize optical damage to QD materials. The pixel resolution and thickness of QD patterns can be controlled by well-defining the microstructures of the molding template and the etching process. The transfer printing process allows QD patterns to be assembled sequentially onto a receiving substrate, which will further improve the original pixel resolution and avoid repetitive optical damage to QDs during the patterning process. Consequently, various QD patterns can be fabricated in this work, including perovskite quantum dot (PQD) patterns with a pixel resolution of up to 669 pixels per inch (ppi) and a maximum thickness of up to 19.74 μm, a wafer-scale high-resolution PQD pattern with sufficient thickness on a flexible substrate, and a dual-color pattern comprising green PQDs and red CdSe QDs. Furthermore, these fabricated QD films with a thickness of over 10 μm show improved color conversion when integrated onto a blue micro-LED, revealing the potential of our technique for full-color micro-LED displays.

An investigation on the cyclic temperature-dependent performance behaviors of ultrabright air-stable QLEDs

The aerobic and thermal stability of quantum-dot light-emitting diodes (QLEDs) is an important factor for the practical applications of these devices under harsh environmental conditions. We demonstrate all-solution-processed amber QLEDs with an external quantum efficiency (EQE) of > 14% with almost negligible efficiency roll-off (droop) and a peak brightness of > 600,000 cd/m2, unprecedented for QLEDs fabricated under ambient air conditions. We investigate the device efficiency and brightness level at a temperature range between - 10 and 85 °C in a 5-step cooling/heating cycle. We conducted the experiments at brightness levels higher than 10,000 cd/m2, required for outdoor lighting applications. Our device performance proves thermal stability, with minimal standard deviation in the performance parameters. Interestingly, the device efficiency parameters recover to the initial values upon returning to room temperature. The variations in the performance are correlated with the modification of charge transport characteristics and induced radiative/non-radiative exciton relaxation dynamics at different temperatures. Being complementary to previous studies on the subject, the present work is expected to shed light on the potential feasibility of realizing aerobic-stable ultrabright droop-free QLEDs and encourage further research for solid-state lighting applications.

Elaborating the interplay between the detecting unit and emitting unit in infrared quantum dot up-conversion photodetectors

The quantum dot up-conversion device combines an infrared photodetector (PD) and a visible quantum-dot light-emitting diode (QLED) to directly convert infrared targets to visible images. However, large efficiency loss is usually induced by the integration of the detecting unit and the emitting unit. One of the important reasons is the performances of the PD and QLED units restraining each other. We regulated the equilibrium between infrared absorption and visible emission by changing the thicknesses of infrared active layers in up-conversion devices. A good balance could be achieved between the absorption of 980 nm incident light and the out-coupling of the 634 nm emission when the active layer thickness is 140 nm, leading to the best performance of the up-conversion device. As more photogenerated carriers are produced with the increase of infrared illumination intensity, the external quantum efficiency (EQE) of the QLED unit in the up-conversion device remains little changed. This suggests the limited amount of photogenerated holes in the PD unit does not limit the EQE of the QLED unit. However, a PD unit with a high ratio of photogenerated holes trapped near the interconnection decreased the EQE in the QLED unit. This work provides new insights into the interplay between the PD and QLED units in up-conversion devices, which is crucial for their further improvements.