Flexible Photodetectors Based on 1D Inorganic Nanostructures

High-performance flexible photodetectors based on CdTe/MoS2 heterojunction

Flexible photodetectors have attracted escalating attention due to their pivotal role in next-generation wearable optoelectronic devices. This work presents high-performance photodetector devices based on CdTe/MoS2 heterojunctions, showcasing outstanding photodetecting and distinctive mechanical properties. The MoS2 film was exfoliated from bulk layered MoS2 and covered by a sputtered ultrathin CdTe film (∼8.4 nm) to form a heterojunction. Benefitting from the photovoltaic effect induced by the built-in electrical field near the high-quality interface, the fabricated CdTe/MoS2 heterojunction photodetector can operate as a self-powered photodetector without any external bias voltage, especially showing a high photodetectivity of 5.84 × 1011 Jones, remarkable photoresponsivity of 270.3 mA W-1, fast photoresponse with a rise/fall time of ∼44.8/134.2 μs and excellent bending durability. These results demonstrate that the CdTe/MoS2 heterojunctions could have significant potential for future applications in optoelectronic devices.

Replicating CD Nanogrooves onto PDMS to Guide Nanowire Growth for Monolithic Flexible Photodetectors with High Bending-Stable UV-vis-NIR Photoresponse

Guided nanowires grown on polymer surfaces facilitate their seamless integration as flexible devices without post-growth processing steps. However, this is challenging due to the inability of polymer films to provide the required lattice-matching effect. In this work, this challenge is addressed by replicating highly aligned nanogrooves from a compact disc (CD) onto a casted flexible polydimethylsiloxane (PDMS) surface. Leveraging the replicated nanogrooves, copper hexadecafluorophthalocyanine (F16CuPc) and various metal phthalocyanines are guided into large-area, self-aligned nanowires. Subsequently, by employing specifically designed shadow masks during electrode deposition, these nanowires are seamlessly integrated as either a monolithic flexible photodetector with a large sensing area or on-chip flexible photodetector arrays. The resulting flexible photodetectors exhibit millisecond and long-term stable response to UV-vis-NIR light. Notably, they demonstrate exceptional bending stability, retaining stable and sensitive photoresponse even at a curvature radius as low as 0.5 cm and after enduring 1000 bending cycles. Furthermore, the photodetector array showcases consistent sensitivity and response speed across the entire array. This work not only proves the viability of guided nanowire growth on flexible polymer surfaces by replicating CD nanogrooves but also underscores the potential for large-scale monolithic integration of guided nanowires as flexible devices.

Polarization-Sensitive Photodetector Based on High Crystallinity Quasi-1D BiSeI Nanowires Synthesized via Chemical Vapor Deposition

Bismuth chalcohalides (BiSeI and BiSI), a class of superior light absorbers, have recently garnered great attention owing to their promise in constructing next-generation optoelectronic devices. However, to date, the photodetection application of bismuth chalcohalides is still limited due to the challenge in controllable preparation. Herein, the synthesis of large-scale quasi-1D BiSeI nanowires via chemical vapor deposition growth is reported. By precisely tuning the growth temperature and the Se supply, it can effectively control the growth thermodynamics and kinetics of BiSeI crystal, and thus achieve high purity quasi-1D BiSeI nanowires with high crystal quality, uniform diameter, and tunable domain length. Theory and optical characterizations of the quasi-1D BiSeI nanowires reveal an indirect bandgap of 1.57 eV with prominent optical linear dichroism. As a result, the quasi-1D BiSeI nanowire-based photodetector demonstrates a broadband photoresponse (400-800 nm) with high responsivity of 5880 mA W-1 , fast response speed of 0.11 ms and superior air stability. More importantly, the photodetector displays strong polarization sensitivity (anisotropic ratio = 1.77) under the 532 nm light irradiation. This work will provide important guides to the synthesis of other quais-1D metal chalcohalides and shed light on their potential in constructing novel multifunctional optoelectronic devices.

Paper-Based Humidity Sensors as Promising Flexible Devices, State of the Art, Part 2: Humidity-Sensor Performances

This review article covers all types of paper-based humidity sensor, such as capacitive, resistive, impedance, fiber-optic, mass-sensitive, microwave, and RFID (radio-frequency identification) humidity sensors. The parameters of these sensors and the materials involved in their research and development, such as carbon nanotubes, graphene, semiconductors, and polymers, are comprehensively detailed, with a special focus on the advantages/disadvantages from an application perspective. Numerous technological/design approaches to the optimization of the performances of the sensors are considered, along with some non-conventional approaches. The review ends with a detailed analysis of the current problems encountered in the development of paper-based humidity sensors, supported by some solutions.

Recent advances in inkjet-printing technologies for flexible/wearable electronics

The rapid development of flexible/wearable electronics requires novel fabricating strategies. Among the state-of-the-art techniques, inkjet printing has aroused considerable interest due to the possibility of large-scale fabricating flexible electronic devices with good reliability, high time efficiency, a low manufacturing cost, and so on. In this review, based on the working principle, recent advances in the inkjet printing technology in the field of flexible/wearable electronics are summarized, including flexible supercapacitors, transistors, sensors, thermoelectric generators, wearable fabric, and for radio frequency identification. In addition, some current challenges and future opportunities in this area are also addressed. We hope this review article can give positive suggestions to the researchers in the area of flexible electronics.

Paper-based broadband flexible photodetectors with van der Waals materials

Layered metal chalcogenide materials are exceptionally appealing in optoelectronic devices thanks to their extraordinary optical properties. Recently, their application as flexible and wearable photodetectors have received a lot of attention. Herein, broadband and high-performance paper-based PDs were established in a very facile and inexpensive method by rubbing molybdenum disulfide and titanium trisulfide crystals on papers. Transferred layers were characterized by SEM, EDX mapping, and Raman analyses, and their optoelectronic properties were evaluated in a wavelength range of 405–810 nm. Although the highest and lowest photoresponsivities were respectively measured for TiS₃ (1.50 mA/W) and MoS₂ (1.13 μA/W) PDs, the TiS₃–MoS₂ heterostructure not only had a significant photoresponsivity but also showed the highest on/off ratio (1.82) and fast response time (0.96 s) compared with two other PDs. This advantage is due to the band offset formation at the heterojunction, which efficiently separates the photogenerated electron–hole pairs within the heterostructure. Numerical simulation of the introduced PDs also confirmed the superiority of TiS₃–MoS₂ heterostructure over the other two PDs and exhibited a good agreement with the experimental results. Finally, MoS₂ PD demonstrated very high flexibility under applied strain, but TiS₃ based PDs suffered from its fragility and experience a remarkable drain current reduction at strain larger than ± 0.33%. However, at lower strains, all PDs displayed acceptable performances.

Supramolecular Engineering of Crystalline Fullerene Micro-/Nano-Architectures

Fullerenes are a molecular form of carbon allotrope and bear certain solubility, which allow the supramolecular assembly of fullerene molecules-also together with other complementary compound classes-via solution-based wet processes. By well-programmed organizing these building blocks and precisely modulating over the assembly process, supramolecularly assembled fullerene micro-/nano-architectures (FMNAs) are obtained. These FMNAs exhibit remarkably enhanced functions as well as tunable morphologies and dimensions at different size scales, leading to their applications in diverse fields. In this review, both traditional and newly developed assembly strategies are reviewed, with an emphasis on the morphological evolution mechanism of FMNAs. The discussion is then focused on how to precisely regulate the dimensions and morphologies to generate functional FMNAs through solvent engineering, co-crystallization, surfactant incorporation, or post-fabrication treatment. In addition to C₆₀ -based FMNAs, this review particularly focuses on recently fabricated FMNAs comprising higher fullerenes (e.g., C₇₀ ) and metallofullerenes. Meanwhile, an overview of the property modulation is presented and multidisciplinary applications of FMNAs in various fields are summarized, including sensors, optoelectronics, biomedicines, and energy. At the end, the prospects for future research, application opportunities, and challenges associated with FMNAs are proposed.

Mode-tunable, micro/nanoscale electrohydrodynamic deposition techniques for optoelectronic device fabrication

The rapid development of fascinating new optoelectronic materials and devices calls for the innovative production of micro/nanostructures in a high-resolution, large-scale, low-cost fashion, preferably compatible with flexible/wearable applications. Powerful electrohydrodynamic (EHD) deposition techniques, which generate micro/nanostructures using high electrical forces, exhibit unique advantages in high printing resolution (<1 μm), tunable printing modes (electrospray for films, electrospinning for fibers and EHD jet printing for dots), and wide material applicability (viscosity 1-10 000 cps), making them attractive in the fabrication of high-density and high-tech optoelectronic devices. This review highlights recent advances related to EHD-deposited optoelectronics, ranging from solar cells, photodetectors, and light-emitting diodes, to transparent electrodes, with detailed descriptions of the EHD-based jetting mechanism, ink formulation requirements and corresponding jetting modes to obtain functional micro/nanostructures. Finally, a brief summary and an outlook on the future perspectives are proposed.

High-Performance and Broadband Flexible Photodetectors Employing Multicomponent Alloyed 1D CdSxSe1-x Micro-Nanostructures

Low-cost multicomponent alloyed one-dimensional (1D) semiconductors exhibit broadband absorption from the ultraviolet to the near-infrared regime, which has attracted a great deal of interest in high-performance flexible optoelectronic devices. Here, we report the facile one-step fabrication of high-performance broadband rigid and flexible photodevices based on multicomponent alloyed 1D cadmium-sulfur-selenide (CdS_xSe_1-x) micro-nanostructures obtained via a vapor transport route. Photoresponse measurements have demonstrated their superior spectral photoresponsivity (5.8 × 10⁴ A/W), several orders of magnitude higher than the pristine CdSe nanobelt photodevice, high specific detectivity (2 × 10¹⁵ Jones), photogain (1.2 × 10⁵), external quantum efficiency (EQE, 1.4 × 10⁷%), rapid response speed (13 ms), and excellent long-term environmental stability. The multicomponent alloyed CdS_xSe_1-x nanobelt photodevice demonstrated about three times higher photocurrent as well as can operate under multiple color illuminations (200-800 nm) and at a high applied bias of 10 V with the photoresponsivity and EQE being boosted to 4.34 × 10⁵ A/W and 8.96 × 10⁷%, respectively. Furthermore, multicomponent alloyed CdS_xSe_1-x nanobelt flexible photodevices show excellent mechanical and flexural photostabilities with identical photoresponse as rigid nanodevices. The improvement mechanism found in the present research can be exploited to lead to the design of high-performance flexible photodevices comprising other multicomponent nanomaterials.

Electrospinning Derived NiO/NiFe2O4 Fiber-in-Tube Composite for Fast Triethylamine Detection under Different Humidity

Designing high-performance triethylamine gas sensors with the stable gas response and low resistance variation in air under a wide relative humidity range is expected for human health and environmental surveillance. Here, a novel porous NiO/NiFe₂O₄ fiber-in-tube nanostructure is prepared by the electrospinning process. The characterizations related to microstructure and surface morphology are carried out. Meanwhile, the gas sensing performance of the porous fiber-in-tube NiO/NiFe₂O₄ materials is evaluated and compared systematically. The results indicate that the introduction of NiO as the second component can not only reduce the baseline resistance of NiFe₂O₄ gas sensors dramatically but also optimize the gas sensing performance to a significant extent. Especially, the fabricated sensor based on the NiO/NiFe₂O₄ fiber-in-tube with a Ni/Fe molar ratio of 1.5 exhibits the best performance. The gas response while detecting 50 ppm triethylamine at 300 °C is about 3.6 times higher than that with Ni/Fe molar ratio of 0.5. Moreover, the response values become more stable, and the baseline resistance has a lower variation under a wide relative humidity range, demonstrating the excellent humidity resistance. These phenomena might be ascribed to the distinctive fiber-in-tube nanostructure as well as the heterojunction between NiFe₂O₄ and NiO.

Bioinspired Self-Powered Piezoresistive Sensors for Simultaneous Monitoring of Human Health and Outdoor UV Light Intensity

The exact fabrication of precise three-dimensional structures for piezoresistive sensors necessitates superior manufacturing methods or tooling, which are accompanied by time-consuming processes and the potential for environmental harm. Herein, we demonstrated a method for in situ synthesis of zinc oxide nanorod (ZnO NR) arrays on graphene-treated cotton and paper substrates and constructed highly sensitive, flexible, wearable, and chemically stable strain sensors. Based on the structure of pine trees and needles in nature, the hybrid sensing layer consisted of graphene-attached cotton or paper fibers and ZnO NRs, and the results showed a high sensitivity of 0.389, 0.095, and 0.029 kPa^-1 and an ultra-wide linear range of 0-100 kPa of this sensor under optimal conditions. Our study found that water absorption and swelling of graphene fibers and the associated reduction of pore size and growth of zinc oxide were detrimental to pressure sensor performance. A random line model was developed to examine the effects of different hydrothermal times on sensor performance. Meanwhile, pulse detection, respiration detection, speech recognition, and motion detection, including finger movements, walking, and throat movements, were used to show their practical application in human health activity monitoring. In addition, monolithically grown ZnO NRs on graphene cotton sheets had been integrated into a flexible sensing platform for outdoor UV photo-indication, which is, to our knowledge, the first successful case of an integrated UV photo-detector and motion sensor. Due to its excellent strain detection and UV detection abilities, these strategies are a step forward in developing wearable sensors that are cost-controllable and high-performance.

Rational design of ZnO@ZIF-8 nanoarrays for improved electrochemical detection of H2O2

Core–shell ZnO@ZIF-8 nanoarrays demonstrate remarkable electrochemical performance for detection of H2O2.

High Breakdown Current Density in Quasi-1D van der Waals Layered Material Ta2NiSe7

We synthesized ternary composition chalcogenide Ta2NiSe7, a quasi-one-dimensional (Q1D) material with excellent crystallinity. To utilize the excellent electrical conductivity property of Ta2NiSe7, the breakdown current density (JBD) according to thickness change through mechanical exfoliation was measured. It was confirmed that as the thickness decreased, the maximum breakdown voltage (VBD) increased, and at 18 nm thickness, 35 MA cm-2 of JBD was measured, which was 35 times higher than that of copper, which is commonly used as an interconnect material. By optimization of the exfoliation process, it is expected that through a theoretical model fitting, the JBD can be increased to about 356 MA cm-2. It is expected that the low-dimensional materials with ternary compositions proposed through this experiment can be used as candidates for current-carrying materials that are required for the miniaturization of various electronic devices.

High-performance flexible UV photodetector based on self-supporting ZnO nano-networks fabricated by substrate-free chemical vapor deposition

Self-supporting ZnO nano-networks have been demonstrated by a substrate-free chemical vapor deposition process for the application as flexible ultraviolet (UV) photodetector. The device shows a responsivity of ∼300 mA W^-1over a wide wavelength range from 254 to 365 nm and a high UV/visible rejection ratio of more than 10⁴. More interestingly, a short 90%-10% decay time of <0.12 s can be observed in the air atmosphere, and the current can fully recover to its original dark value within 1 s after switching off the light. The quick response speed should be associated with the wire-wire junction barriers and the adsorption/desorption process of oxygen molecules on the oxygen vacancies near the surface of the ZnO. In addition, the photocurrent, the dark current and the response speed of the ZnO nano-networks flexible UV photodetector nearly stay the same under different bending conditions, suggesting the excellent photoelectric stability and repeatability. Such a simple and cheap way for fabricating self-supporting ZnO-based devices has broad application prospects in the fields of flexible and wearable electronic devices.

Laser-assisted micropyramid patterned PDMS encapsulation of 1D tellurium nanowires on cellulose paper for highly sensitive strain sensor and its photodetection studies

This work demonstrates the fabrication of tellurium-nanowires (Te-NWs)/paper based device encapsulated using laser assisted mircopyramid patterned polydimethylsiloxane (PDMS) films. Although there are multiple reports published on 1D Te, most of them are limited to establishing its properties and studying its behavior as a sensor and research on the utilization of Te-NWs for physical sensors remain unexplored. Further, reports on p-type photodetectors also remain scarce. The fabricated Te-NWs/paper with micropyramid structured PDMS films encapsulation was used as a strain sensor, and it exhibited considerable improvement (∼60%) in sensitivity compared to smooth PDMS films. The gauge factor of the developed strain sensor was found to be ∼15.3. In addition, fabricated Te-NWs/paper device with contacts was used as a photodetector and it showed photoresponsivity of ∼22.5 mA W^-1and ∼14.5 mA W^-1in visible and NIR regions, respectively. Furthermore, the device exhibited long-term mechanical stability under harsh deformations. Fabricated 1D Te-NWs/paper device was utilized as a strain sensor to monitor the angular movements in the human body and successfully monitored various human motions, including wrist bending, finger knuckle, elbow joint, and knee joint. The successful demonstration of Te-NWs based physical sensors and utilization in broadband photodetectors opens avenues of research for tellurium based flexible and wearable devices.

Microstructure and Properties of Ag-Doped ZnO Grown Hydrothermally on a Graphene-Coated Polyethylene Terephthalate Bilayer Flexible Substrate

Ag-doped ZnO nanorods growth on a PET-graphene substrate (Ag-ZnO/PET-GR) with different Ag-doped content were synthesized by low-temperature ion-sputtering-assisted hydrothermal synthesis method. The phase composition, morphologies of ZnO, and electrical properties were analyzed. Ag-doping affects the initially perpendicular growth of ZnO nanorods, resulting in oblique growth of ZnO nanorods becoming more obvious as the Ag-doped content increases, and the diameter of the nanorods decreasing gradually. The width of the forbidden band gap of the ZnO films decreases with increasing Ag-doped content. For the Ag-ZnO/PET-GR composite structure, the Ag-ZnO thin film with 5% Ag-doped content has the largest carrier concentration (8.1 × 10¹⁸ cm⁻³), the highest mobility (67 cm² · V⁻¹ · s⁻¹), a small resistivity (0.09 Ω·cm), and impressive electrical properties.

Recent Advances in Perovskite Photodetectors for Image Sensing

In recent years, metal halide perovskites have been widely investigated to fabricate photodetectors for image sensing due to the excellent photoelectric performance, tunable bandgap, and low-cost solution preparation process. In this review, a comprehensive overview of the recent advances in perovskite photodetectors for image sensing is provided. First, the key performance parameters and the basic device types of photodetectors are briefly introduced. Then, the recent developments of image sensors on the basis of different dimensional perovskite materials, including 0D, 1D, 2D, and 3D perovskite materials, are highlighted. Besides the device structures and photoelectric properties of perovskite image sensors, the preparation methods of perovskite photodetector arrays are also analyzed. Subsequently, the single-pixel imaging of perovskite photodetectors and the strategies to fabricate narrowband perovskite photodetectors for color discrimination are discussed. Finally, the potential challenges and possible solutions for the future development of perovskite image sensors are presented.

Unveiling the Electronic Interaction in ZnO/PtO/Pt Nanoarrays for Catalytic Detection of Triethylamine with Ultrahigh Sensitivity

The detection of harmful volatile organic compounds is of great significance to environmental quality and human health. However, it still remains a challenge to achieve high detection sensitivity at a relatively low temperature. Herein, an ultrasensitive catalytic sensor for the detection of triethylamine (TEA) based on ZnO/PtO/Pt nanoarray thin films was realized. Sensor measurements reveal that the PtO/Pt sensitizer dramatically reduces the working temperature from 195 °C of a pristine ZnO sensor to 125 °C of ZnO/PtO/Pt sensors. The ZnO/PtO/Pt sensors exhibit an extremely high response of 3513 to 50 ppm TEA, which is three orders of magnitude higher than that of pristine ZnO. Meanwhile, an ultralow limit of detection of 8.3 ppb is achieved. The outstanding performances are superior to those in most previous reports on TEA detection. Mechanistic investigations reveal that the outstanding performances are ascribed to the strong electronic interaction between PtO and ZnO and the catalytic spillover effect of Pt.

WS2 Quantum Dots on e-Textile as a Wearable UV Photodetector: How Well Reduced Graphene Oxide Can Serve as a Carrier Transport Medium?

We document the fabrication and investigations of a novel photodetector based on a WS₂ quantum dots and reduced graphene oxide (RGO) (WS₂-QDs/RGO) heterostructure. The proposed photodetector is simple, scalable, cost-effective, and flexible and works in an ambient environment. An enhanced photodetection efficiency is observed due to the superior electronic properties of WS₂-QDs and excellent electrical as well as thermal properties of the carrier transportation medium, RGO. For device fabrication, GO and WS₂-QDs were separately synthesized via different chemistry followed by decorating WS₂-QDs on RGO coated cotton textile. Characterization studies confirm the transformation of exfoliated WS₂-2D flakes into WS₂-0D quantum dots and graphene oxide (GO) to RGO. The optimized photodetection performance of WS₂-QDs/RGO demonstrates its photoresponsivity of 5.22 mA W^-1 at 1.4 mW mm^-2 power density of a 405 nm illumination source. Other sensor parameters such as photosensitivity (∼20.2%), resolution (∼0.031 mW mm^-2 μA^-1), response time (1.57 s), recovery time (1.83 s), and specific detectivity (∼1.6 × 10⁶ jones) are found for WS₂-QDs/RGO sensor, and a few of these parameters are comparable and even superior to some of the devices as reported. Photosensing mechanism is explained in terms of charge transfer caused by appropriate band alignment across the interface between WS₂-QDs and RGO, where dimensionality and quantum confinement of nanostructures synergistically enhance the overall performance of the heterostructure. The device flexibility is examined through bending, stretching, and twisting experiments and successfully demonstrated its potentiality. Sensor performance even after being soaked in water and subsequent drying shows the possibility of reuse. The attributes of flexibility, high sensitivity and responsivity, superior resolution, and cost-effectiveness of our novel flexible photodetector indicate its promising potential for flexible and wearable optical detectors operating in UV band. Although negative photoconductance of the WS₂-QDs/RGO sensor is a major cause for not allowing the sensor to show its best performance, a trade-off is made with improved device design to qualify the expectations of being a competitive device, and this has been demonstrated with experimental facts.

Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical Properties

The low-dimensional, highly anisotropic geometries, and superior mechanical properties of one-dimensional (1D) nanomaterials allow the exquisite strain engineering with a broad tunability inaccessible to bulk or thin-film materials. Such capability enables unprecedented possibilities for probing intriguing physics and materials science in the 1D limit. Among the techniques for introducing controlled strains in 1D materials, nanoimprinting with embossed substrates attracts increased attention due to its capability to parallelly form nanomaterials into wrinkled structures with controlled periodicities, amplitudes, orientations at large scale with nanoscale resolutions. Here, we systematically investigated the strain-engineered anisotropic optical properties in Te nanowires through introducing a controlled strain field using a resist-free thermally assisted nanoimprinting process. The magnitude of induced strains can be tuned by adjusting the imprinting pressure, the nanowire diameter, and the patterns on the substrates. The observed Raman spectra from the chiral-chain lattice of 1D Te reveal the strong lattice vibration response under the strain. Our results suggest the potential of 1D Te as a promising candidate for flexible electronics, deformable optoelectronics, and wearable sensors. The experimental platform can also enable the exquisite mechanical control in other nanomaterials using substrate-induced, on-demand, and controlled strains.

Paper-Based Sensors for Gas, Humidity, and Strain Detections: A Review

Paper, as a flexible, low-cost, lightweight, tailorable, environmental-friendly, degradable, and renewable material, is emerging in electronic devices. Especially, many kinds of paper-based (PB) sensors have been reported for wearable applications in recent years. Among them, the PB gas, humidity, and strain sensors are widely studied for monitoring gas, humidity, and strain from the human body and the environment. However, gas, humidity, and strain often coexist and interact, and the paper itself is hydrophilic and flexible, resulting in that it is still challenging to develop high-performance PB sensors specialized for gas, humidity, and strain detections. Therefore, it is necessary to summarize and discuss them systematically. In this review, we focus on summarizing the state-of-art studies of the PB gas, humidity, and strain sensors. Specifically, the fabrications (electrodes and sensing materials) and applications of PB gas, humidity, and strain sensors are summarized and discussed. The current challenges and the potential trends of PB sensors for gas, humidity, and strain detections are also outlined. This review not only can help readers to understand the development status of the PB gas, humidity, and strain sensors but also is helpful for readers to find out and solve the problems in this field through comparative reading.

An Integrated Flexible All-Nanowire Infrared Sensing System with Record Photosensitivity

Infrared (IR) photodetectors are a key optoelectronic device and have thus attracted considerable research attention in recent years. Photosensitivity is an increasingly important device performance parameter for nanoscale photodetectors and image sensors, as it determines the ultimate imaging quality and contrast. However, photosensitivities of state-of-the-art low-dimensional nanostructure-based IR detectors are considerably low, limiting their practical applications. Herein, a biomimetic IR detection amplification (IRDA) system that boosts photosensitivity by several orders of magnitude by introducting nanowire field effect transistors (FETs), resulting in a peak photosensitivity of 7.6 × 10⁴ under an illumination of 1342 nm, is presented. Consequently, high-contrast imaging of IR light is obtained on the flexible IRDA arrays. The image information can be then trained and recognized by an artificial neural network for higher image-recognition efficiency. This work provides a new perspective for developing high-performance IR imaging systems, and is expected to undoubtedly enlighten future work on artificial intelligence and biorobotic systems.

Ag2O-decorated electrospun BiVO4 nanofibers with enhanced photocatalytic performance

Semiconductor photocatalysts are emerging as tools for pollutant degradation in industrial wastewater, air purification, antibacterial applications, etc. due to their use of visible light, which is abundant in sunlight. Here, we report a new type of p–n junction Ag₂O/BiVO₄ heterogeneous nanostructured photocatalyst with enhanced photocatalytic performance. P-type Ag₂O nanoparticles were in situ reduced and assembled on the surface of electrospun BiVO₄ nanofibers using ultraviolet (UV) irradiation; this process hindered the recombination of localized photogenerated electron–hole pairs, and hence resulted in the enhanced photocatalytic activity of the BiVO₄/Ag₂O nanocomposites. The photocatalytic activities of the obtained BiVO₄ and BiVO₄/Ag₂O nanocomposites were assessed by measuring the degradation of rhodamine B (RhB) under visible light. The 10 wt% Ag₂O/BiVO₄ sample yielded the optimum degradation of RhB (98.47%), much higher than that yielded by pure BiVO₄ nanofibers (64.67%). No obvious change in the XRD pattern of an Ag₂O/BiVO₄ sample occurred as a result of its use in the photocatalytic reaction, indicating its excellent stability. The high photocatalytic performance observed was attributed to the large surface-to-volume ratio of the essentially one-dimensional electrospun BiVO₄ nanofibers and to the in situ growth of p-type Ag₂O on the surface of the n-type BiVO₄ nanofibers.

Ag₂O doped electrospun BiVO₄ nanofibers with p–n junction heterogeneous structures show enhanced photocatalytic activity under visible light (photocatalytic efficiency: 98.47% within 100 min) and good cycling stability.

Effect of Bias on the Response of GaN Axial p-n Junction Single-Nanowire Photodetectors

We present a comprehensive study of the performance of GaN single-nanowire photodetectors containing an axial p-n junction. The electrical contact to the p region of the diode is made by including a p⁺/n⁺ tunnel junction as cap structure, which allows the use of the same metal scheme to contact both ends of the nanowire. Single-nanowire devices present the rectifying current-voltage characteristic of a p-n diode but their photovoltaic response to ultraviolet radiation scales sublinearly with the incident optical power. This behavior is attributed to the dominant role of surface states. Nevertheless, when the junction is reverse biased, the role of the surface becomes negligible in comparison to the drift of photogenerated carriers in the depletion region. Therefore, the responsivity increases by about 3 orders of magnitude and the photocurrent scales linearly with the excitation. These reverse-biased nanowires display decay times in the range of ∼10 μs, limited by the resistor-capacitor time constant of the setup. Their ultraviolet/visible contrast of several orders of magnitude is suitable for applications requiring high spectral selectivity. When the junction is forward biased, the device behaves as a GaN photoconductor with an increase of the responsivity at the price of a degradation of the time response. The presence of leakage current in some of the wires can be modeled as a shunt resistance which reacts to the radiation as a photoconductor and can dominate the response of the wire even under reverse bias.

Facile, Flexible, Cost-Saving, and Environment-Friendly Paper-Based Humidity Sensor for Multifunctional Applications

Developing a facile, cost-saving, and environment-friendly method for fabricating a multifunctional humidity sensor is of great significance to expand its practical applications. However, most humidity sensors involve a complex fabrication process, resulting in their high cost and narrow application fields. Herein, a multifunctional paper-based humidity sensor with many advantages is proposed. This humidity sensor is fabricated using conventional printing paper and flexible conductive adhesive tape by a facile pasting method, in which the paper is used as both the humidity-sensing material and the substrate of the sensor. Owing to the moderate hydrophilicity of the paper and the rational structure design of the paper-based humidity sensor, the sensor exhibits an excellent humidity-sensing response of more than 10³ as well as good linearity ( R² = 0.9549) within the humidity range from 41.1 to 91.5% relative humidity. Furthermore, the paper-based humidity sensor has good flexibility and compatibility, endowing it with multifunctional applications for breath rate, baby diaper wetting, noncontact switch, skin humidity, and spatial localization monitoring. Although the resistance of the paper-based humidity sensor is relatively large, the humidity-sensing response signals of the sensor can be conveniently processed by the designed signal processing system. The readily available starting materials and facile fabrication technique provide useful strategies for the development of multifunctional humidity sensors.

High-Performance All-Polymer Photodetectors via a Thick Photoactive Layer Strategy

To achieve high detectivity in all-polymer photodetectors (all-PPDs), a thick-film photoactive layer is favored because it can effectively suppress the dark current density. However, if the photoactive layer of the film is too thick, it leads to reduced responsivity owing to increased recombination loss. We developed high-performance all-PPDs by using a narrowband-gap p-type polymer NT40 and an n-type polymer poly{[ N, N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]- alt-5,5'-(2,2'bithiophene)} as the photoactive layer. The high charge carrier mobility of both copolymers enabled a photoactive layer thickness of 300 nm, leading to an ultralow dark current density of 4.85 × 10^-10 A cm^-2, a detectivity of 2.61 × 10¹³ Jones, a high responsivity of 0.33 A W^-1 at 720 nm, and a bias of -0.1 V. The detectivity achieved >10¹³ Jones in a wide range from 360 to 850 nm, which is among the highest values so far reported for all-PPDs without extra gains. More importantly, the resultant all-PPDs exhibited a high working frequency over 10 kHz associated with a large linear dynamic range. These findings demonstrate great potential for practical applications of the all-PPDs developed in this work.

A piezo-phototronic enhanced serrate-structured ZnO-based heterojunction photodetector for optical communication

ZnO-based heterojunction photodetectors have been widely used in various fields such as optical imaging and health monitoring. As for the traditional planar heterojunction interface, their limited optical absorption will place restrictions on the full photoelectric potential of ZnO nanorods, which severely restrains the commercial applications of ZnO-based photodetectors. Herein, using an intrinsically octahedral structure of p-type Cu2O and one-dimensional ZnO arrays, the newly designed serrate-structured heterojunction was constructed, whose unique serrate-structured interface of ZnO/Cu2O is highly conducive to the aggrandizing of optical absorption. The as-fabricated photodetector could achieve a high on/off ratio up to 1000 and an optimum photocurrent of 24.90 μA under 1.41 mW mm-2 (405 nm) illumination without bias voltage, which was 2.5 times higher than that of the planar-structured photodetector, and the response time was as quick as 1.6 ms. When the additional external strain was 0.39%, the performance was dramatically enhanced more than 5 times due to the synergism of the piezo-phototronic effect and the serrate-structured design. Based on this, we successfully developed designed photodetector arrays with an excellent optical communication performance of transmitting information. Prospectively, this kind of unique serrate-structured heterojunction design will open up a possible opportunity for high performance photodetectors based on structural engineering.

Flexible Photodetector Arrays Based on Patterned CH3 NH3 PbI3- x Clx Perovskite Film for Real-Time Photosensing and Imaging

The quest for novel deformable image sensors with outstanding optoelectronic properties and large-scale integration becomes a great impetus to exploit more advanced flexible photodetector (PD) arrays. Here, 10 × 10 flexible PD arrays with a resolution of 63.5 dpi are demonstrated based on as-prepared perovskite arrays for photosensing and imaging. Large-scale growth controllable CH₃ NH₃ PbI_{3- x} Cl_x arrays are synthesized on a poly(ethylene terephthalate) substrate by using a two-step sequential deposition method with the developed Al₂ O₃ -assisted hydrophilic-hydrophobic surface treatment process. The flexible PD arrays with high detectivity (9.4 × 10¹¹ Jones), large on/off current ratio (up to 1.2 × 10³ ), and broad spectral response exhibit excellent electrical stability under large bending angle (θ = 150°) and superior folding endurance after hundreds of bending cycles. In addition, the device can execute the functions of capturing a real-time light trajectory and detecting a multipoint light distribution, indicating that it has widespread potential in photosensing and imaging for optical communication, digital display, and artificial electronic skin applications.

Morphological evolution process of δ-MnO2 from 2-D to 1-D without phase transition

Morphological evolution of δ-MnO₂ from nanosheets to nanofibers with direct pathways for electron transport.

Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity

2D GeSe possesses black phosphorous-analog-layered structure and shows excellent environmental stability, as well as highly anisotropic in-plane properties. Additionally, its high absorption efficiency in the visible range and high charge carrier mobility render it promising for applications in optoelectronics. However, most reported GeSe-based photodetectors show frustrating performance especially in photoresponsivity. Herein, a 2D GeSe-based phototransistor with an ultrahigh photoresponsivity is demonstrated. Its optimized photoresponsivity can be up to ≈1.6 × 105 A W-1. This high responsivity can be attributed to the highly efficient light absorption and the enhanced photoconductive gain due to the existence of trap states. The exfoliated GeSe nanosheet is confirmed to be along the [001] (armchair direction) and [010] (zigzag direction) using transmission electron microscopy and anisotropic Raman characterizations. The angle-dependent electric and photoresponsive performance is systematically explored. Notably, the GeSe-based phototransistor shows strong polarization-dependent photoresponse with a peak/valley ratio of 1.3. Furthermore, the charge carrier mobility along the armchair direction is measured to be 1.85 times larger than that along the zigzag direction.

Recent Advances in Biointegrated Optoelectronic Devices

With recent progress in the design of materials and mechanics, opportunities have arisen to improve optoelectronic devices, circuits, and systems in curved, flexible, stretchable, and biocompatible formats, thereby enabling integration of customized optoelectronic devices and biological systems. Here, the core material technologies of biointegrated optoelectronic platforms are discussed. An overview of the design and fabrication methods to form semiconductor materials and devices in flexible and stretchable formats is presented, strategies incorporating various heterogeneous substrates, interfaces, and encapsulants are discussed, and their applications in biomimetic, wearable, and implantable systems are highlighted.

High-Switching-Ratio Photodetectors Based on Perovskite CH₃NH₃PbI₃ Nanowires

Hybrid organic-inorganic perovskite materials have attracted extensive attention due to their impressive performance in photovoltaic devices. One-dimensional perovskite CH₃NH₃PbI₃ nanomaterials, possessing unique structural features such as large surface-to-volume ratio, anisotropic geometry and quantum confinement, may have excellent optoelectronic properties, which could be utilized to fabricate high-performance photodetectors. However, in comparison to CH₃NH₃PbI₃ thin films, reports on the fabrication of CH₃NH₃PbI₃ nanowires for optoelectrical application are rather limited. Herein, a two-step spin-coating process has been utilized to fabricate pure-phase and single-crystalline CH₃NH₃PbI₃ nanowires on a substrate without mesoporous TiO₂ or Al₂O₃. The size and density of CH₃NH₃PbI₃ nanowires can be easily controlled by changing the PbI₂ precursor concentration. The as-prepared CH₃NH₃PbI₃ nanowires are utilized to fabricate photodetectors, which exhibit a fairly high switching ratio of ~600, a responsivity of 55 mA/W, and a normalized detectivity of 0.5 × 10¹¹ jones under 532 nm light illumination (40 mW/cm²) at a very low bias voltage of 0.1 V. The as-prepared perovskite CH₃NH₃PbI₃ nanowires with excellent optoelectronic properties are regarded to be a potential candidate for high-performance photodetector application.

Large-Scale Direct-Writing of Aligned Nanofibers for Flexible Electronics

Nanofibers/nanowires usually exhibit exceptionally low flexural rigidities and remarkable tolerance against mechanical bending, showing superior advantages in flexible electronics applications. Electrospinning is regarded as a powerful process for this 1D nanostructure; however, it can only be able to produce chaotic fibers that are incompatible with the well-patterned microstructures in flexible electronics. Electro-hydrodynamic (EHD) direct-writing technology enables large-scale deposition of highly aligned nanofibers in an additive, noncontact, real-time adjustment, and individual control manner on rigid or flexible, planar or curved substrates, making it rather attractive in the fabrication of flexible electronics. In this Review, the ground-breaking research progress in the field of EHD direct-writing technology is summarized, including a brief chronology of EHD direct-writing techniques, basic principles and alignment strategies, and applications in flexible electronics. Finally, future prospects are suggested to advance flexible electronics based on orderly arranged EHD direct-written fibers. This technology overcomes the limitations of the resolution of fabrication and viscosity of ink of conventional inkjet printing, and represents major advances in manufacturing of flexible electronics.

Fabrication of Bi19S27I3 nanorod cluster films for enhanced photodetection performance

Bi₁₉S₂₇I₃ nanorod cluster films are directly grown on rigid substrates for potential application in wide range photodetectors.

Photodetectors Based on Organic-Inorganic Hybrid Lead Halide Perovskites

Recent years have witnessed skyrocketing research achievements in organic-inorganic hybrid lead halide perovskites (OIHPs) in the photovoltaic field. In addition to photovoltaics, more and more studies have focused on OIHPs-based photodetectors in the past two years, due to the remarkable optoelectronic properties of OIHPs. This article summarizes the latest progress in this research field. To begin with, the factors influencing the performance of photodetectors are discussed, including both internal and external factors. In particular, the channel width and the incident power intensities should be taken into account to precisely and objectively evaluate and compare the output performance of different photodetectors. Next, photodetectors fabricated on single-component perovskites in terms of different micromorphologies are discussed, namely, 3D thin-film and single crystalline, 2D nanoplates, 1D nanowires, and 0D nanocrystals, respectively. Then, bilayer structured perovskite-based photodetectors incorporating inorganic and organic semiconductors are discussed to improve the optoelectronic performance of their pristine counterparts. Additionally, flexible OIHPs-based photodetectors are highlighted. Finally, a brief conclusion and outlook is given on the progress and challenges in the field of perovskites-based photodetectors.

Flexible Photodetectors Based on Novel Functional Materials

Flexible photodetectors have attracted a great deal of research interest in recent years due to their great possibilities for application in a variety of emerging areas such as flexible, stretchable, implantable, portable, wearable and printed electronics and optoelectronics. Novel functional materials, including materials with zero-dimensional (0D) and one-dimensional (1D) inorganic nanostructures, two-dimensional (2D) layered materials, organic semiconductors and perovskite materials, exhibit appealing electrical and optoelectrical properties, as well as outstanding mechanical flexibility, and have been widely studied as building blocks in cost-effective flexible photodetection. Here, we comprehensively review the outstanding performance of flexible photodetectors made from these novel functional materials reported in recent years. The photoresponse characteristics and flexibility of the devices will be discussed systematically. Summaries and challenges are provided to guide future directions of this vital research field.

Fully-Inorganic Trihalide Perovskite Nanocrystals: A New Research Frontier of Optoelectronic Materials

All-inorganic trihalide perovskite nanocrystals (NCs) are emerging as a new class of superstar semiconductors with excellent optoelectronic properties and great potential for a broad range of applications in lighting, lasing, photon detection, and photovoltaics. This article provides an up-to-date review on the developments of fully-inorganic trihalide perovskite NCs by emphasizing their controllable solution fabrication strategies, structural phase transformation, tunable optoelectronic properties, stability, as well as their photovoltaic and optoelectronic applications. Among the properties to be surveyed, particular focus is on the size-, shape-, and composition-dependent photoluminescence properties. Finally, by identifying new challenges, suggestions are provided for further research and potential development of this area.

An Origami Perovskite Photodetector with Spatial Recognition Ability

Flexible photodetectors are attracting substantial attention because of their promising applications in bendable display and smart clothes which cannot be fulfilled by the existing rigid counterparts. In this work, we demonstrate a newly designed photodetector constructed on the common printing paper. Pencil trace was applied as the graphite electrode. With such a simple and convenient method, the as-prepared photodetector exhibited a satisfactory responsivity of 4.4 mA/W, on/off current ratio of 32, coupled with a high response speed of <10 ms. It also demonstrated excellent mechanical flexibility and durability. Most inspiringly, by an ingenious origami, we created the first perovskite photodetector with a 3D configuration. The cubic photodetector array displayed an excellent spatial recognition ability which could not be achieved in all the previously reported 2D photodetectors. Such a fusion of materials science and the art of origami provides a robust strategy for the design of low-cost flexible electronics, especially for the applications in 3D configurations.

An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure

ZnO nanostructure-based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

New insights and perspectives into biological materials for flexible electronics

Materials based on biological materials are becoming increasingly competitive and are likely to be critical components in flexible electronic devices.

Flexible in-plane microsupercapacitors with electrospun NiFe2O4 nanofibers for portable sensing applications

The development of wearable electronic devices in recent decades has brought new opportunities in the exploration of micro-supercapacitors as energy storage units. In this work, we report the fabrication of flexible NiFe2O4 nanofiber based in-plane micro-supercapacitors (MSCs), which can serve as energy storage receptors to drive a portable graphene pressure sensor. The obtained NiFe2O4 nanofiber electrodes exhibited a specific capacitance of 2.23 F cm(-3) at the scan rate of 100 mV s(-1), and excellent rate capability and robust cycling stability with a capacitance retention of 93.6% after 10 000 charge/discharge cycles. Moreover, the in-plane MSCs have superior flexibility and outstanding stability even after repetition of charge/discharge cycles during the convex and concave bending states. The MSCs offered a high energy density of 0.197 mWh cm(-3) and power density up to 2.07 W cm(-3). We also coupled the MSCs with a graphene pressure sensor as a micro-integrated system to implement it's pressure response function and used MATLAB to simulate this system behavior as well. The performance of the designed systems exhibited a stable pressure response, and the simulated results coincide well with the experimental data, demonstrating its feasibility in wearable electronic devices.

Ultraviolet/visible photodetectors with ultrafast, high photosensitivity based on 1D ZnS/CdS heterostructures

One-dimensional (1D) semiconducting heterostructures have been widely studied for optoelectronics applications because of their unique geometry and attractive physical properties. In this study, we successfully synthesized 1D ZnS/CdS heterostructures, which can be used to fabricate high performance ultraviolet/visible photodetectors. Due to the separation of photo-generated electron-hole pairs, the resultant photodetector showed excellent photoresponse properties, including ultrahigh Ion/Ioff ratios (up to 10(5)) and specific detectivity (2.23 × 10(14) Jones), relatively fast response speed (5 ms), good stability and reproducibility. Moreover, the as-fabricated flexible photodetectors showed great mechanical stability under different bending conditions. Our results revealed the possibility of 1D ZnS/CdS heterostructures for application in the detection of UV and visible light. The main advantages of the heterostructures have great potential application for future optoelectronic devices.