1
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Bang S, Kang W, Kim D, Suh HC, Kim DH, Kwon C, Jo J, Kim JH, Ko H, Kim KK, Ahn J, Jeong MS. Harnessing Persistent Photocurrent in a 2D Semiconductor-Polymer Hybrid Structure: Electron Trapping and Fermi Level Modulation for Optoelectronic Memory. NANO LETTERS 2024; 24:9889-9897. [PMID: 38985008 DOI: 10.1021/acs.nanolett.4c02173] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/11/2024]
Abstract
Recently, 2D semiconductor-based optoelectronic memory has been explored to overcome the limitations of conventional von Neumann architectures by integrating optical sensing and data storage into one device. Persistent photocurrent (PPC), essential for optoelectronic memory, originates from charge carrier trapping according to the Shockley-Read-Hall (SRH) model in 2D semiconductors. The quasi-Fermi level position influences the activation of charge-trapping sites. However, the correlation between quasi-Fermi level modulations and PPC in 2D semiconductors has not been extensively studied. In this study, we demonstrate optoelectronic memory based on a 2D semiconductor-polymer hybrid structure and confirm that the underlying mechanism is charge trapping, as the SRH model explains. Under light illumination, electrons transfer from polyvinylpyrrolidone to p-type tungsten diselenide, resulting in high-level injection and majority carrier-type transitions. The quasi-Fermi level shifts upward with increasing temperature, improving PPC and enabling optoelectronic memory at 433 K. Our findings offer valuable insights into optimizing 2D semiconductor-based optoelectronic memory.
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Affiliation(s)
- Seungho Bang
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Wooyoung Kang
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Dohyeong Kim
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Hyeong Chan Suh
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Dong Hyeon Kim
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Chan Kwon
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Jieun Jo
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Ji-Hong Kim
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Hayoung Ko
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Ki Kang Kim
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jinho Ahn
- Division of Materials Science and Engineering, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Mun Seok Jeong
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
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2
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Karmakar A, Al-Mahboob A, Zawadzka N, Raczyński M, Yang W, Arfaoui M, Gayatri, Kucharek J, Sadowski JT, Shin HS, Babiński A, Pacuski W, Kazimierczuk T, Molas MR. Twisted MoSe 2 Homobilayer Behaving as a Heterobilayer. NANO LETTERS 2024; 24:9459-9467. [PMID: 39042710 PMCID: PMC11311526 DOI: 10.1021/acs.nanolett.4c01764] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2024] [Revised: 07/11/2024] [Accepted: 07/11/2024] [Indexed: 07/25/2024]
Abstract
Heterostructures (HSs) formed by the transition-metal dichalcogenide materials have shown great promise in next-generation (opto)electronic applications. An artificially twisted HS allows us to manipulate the optical and electronic properties. In this work, we introduce the understanding of the energy transfer (ET) process governed by the dipolar interaction in a twisted molybdenum diselenide (MoSe2) homobilayer without any charge-blocking interlayer. We fabricated an unconventional homobilayer (i.e., HS) with a large twist angle (∼57°) by combining the chemical vapor deposition (CVD) and mechanical exfoliation (Exf.) techniques to fully exploit the lattice parameter mismatch and indirect/direct (CVD/Exf.) bandgap nature. These effectively weaken the interlayer charge transfer and allow the ET to control the carrier recombination channels. Our experimental and theoretical results explain a massive HS photoluminescence enhancement due to an efficient ET process. This work shows that the electronically decoupled MoSe2 homobilayer is coupled by the ET process, mimicking a "true" heterobilayer nature.
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Affiliation(s)
- Arka Karmakar
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Abdullah Al-Mahboob
- Center
for Functional Nanomaterials, Brookhaven
National Laboratory, Upton, New York 11973, United States
| | - Natalia Zawadzka
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Mateusz Raczyński
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Weiguang Yang
- Department
of Chemistry, Ulsan National Institute of
Science and Technology, Ulsan 44919, Republic
of Korea
| | - Mehdi Arfaoui
- Département
de Physique, Faculté des Sciences de Tunis, Université Tunis El Manar, Campus Universitaire, 1060 Tunis, Tunisia
| | - Gayatri
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Julia Kucharek
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Jerzy T. Sadowski
- Center
for Functional Nanomaterials, Brookhaven
National Laboratory, Upton, New York 11973, United States
| | - Hyeon Suk Shin
- Department
of Chemistry, Ulsan National Institute of
Science and Technology, Ulsan 44919, Republic
of Korea
- Center
for 2D Quantum Heterostructures, Institute
for Basic Science (IBS), Suwon 16419, Republic
of Korea
- Department
of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Adam Babiński
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Wojciech Pacuski
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Tomasz Kazimierczuk
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Maciej R. Molas
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
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3
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Maity S, Kumar P. A synergistic heterojunction of SnS 2/SnSSe nanosheets on GaN for advanced self-powered photodetectors. NANOSCALE HORIZONS 2024; 9:1318-1329. [PMID: 38808592 DOI: 10.1039/d4nh00102h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
Tin-based TMDCs are gaining traction in optoelectronics due to their eco-friendliness and easy synthesis, contrasting Mo/W-based counterparts. This study pioneers the solvothermal synthesis of highly crystalline SnSSe alloy, akin to Janus structures, bridging a notable research gap. By integrating SnS2/SnSSe materials onto a GaN platform, a synergistic heterojunction is created, enhancing light absorption and the electron-hole pair separation efficiency, demonstrating a self-powered photodetection. The GaN/SnS2/SnSSe heterojunction showcases a staircase-like (type-II) band alignment and exceptional performance metrics: high photoresponsivity of 314.96 A W-1, specific detectivity of 2.0 × 1014 jones, and external quantum efficiency of 10.7 × 104% under 365 nm illumination at 150 nW cm-2 intensity and 3 V bias. Notably, the device displays intensity-dependent photocurrent and photoswitching behaviors without external bias, highlighting its unique self-powered attributes. This study underscores SnS2's significance in optoelectronics and explores SnSSe integration into van der Waals heterostructures, promising advanced photodetection devices and bias-free optoelectronics.
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Affiliation(s)
- Sukhendu Maity
- School of Materials Science, Indian Association for the Cultivation of Science, Kolkata 700032, India.
| | - Praveen Kumar
- School of Materials Science, Indian Association for the Cultivation of Science, Kolkata 700032, India.
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4
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Han SS, Shin JC, Ghanipour A, Lee JH, Lee SG, Kim JH, Chung HS, Lee GH, Jung Y. High Mobility Transistors and Flexible Optical Synapses Enabled by Wafer-Scale Chemical Transformation of Pt-Based 2D Layers. ACS APPLIED MATERIALS & INTERFACES 2024; 16:36599-36608. [PMID: 38949620 DOI: 10.1021/acsami.4c06540] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/02/2024]
Abstract
Electronic devices employing two-dimensional (2D) van der Waals (vdW) transition-metal dichalcogenide (TMD) layers as semiconducting channels often exhibit limited performance (e.g., low carrier mobility), in part, due to their high contact resistances caused by interfacing non-vdW three-dimensional (3D) metal electrodes. Herein, we report that this intrinsic contact issue can be efficiently mitigated by forming the 2D/2D in-plane junctions of 2D semiconductor channels seamlessly interfaced with 2D metal electrodes. For this, we demonstrated the selectively patterned conversion of semiconducting 2D PtSe2 (channels) to metallic 2D PtTe2 (electrodes) layers by employing a wafer-scale low-temperature chemical vapor deposition (CVD) process. We investigated a variety of field-effect transistors (FETs) employing wafer-scale CVD-2D PtSe2/2D PtTe2 heterolayers and identified that silicon dioxide (SiO2) top-gated FETs exhibited an extremely high hole mobility of ∼120 cm2 V-1 s-1 at room temperature, significantly surpassing performances with previous wafer-scale 2D PtSe2-based FETs. The low-temperature nature of the CVD method further allowed for the direct fabrication of wafer-scale arrays of 2D PtSe2/2D PtTe2 heterolayers on polyamide (PI) substrates, which intrinsically displayed optical pulse-induced artificial synaptic behaviors. This study is believed to vastly broaden the applicability of 2D TMD layers for next-generation, high-performance electronic devices with unconventional functionalities.
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Affiliation(s)
- Sang Sub Han
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - June-Chul Shin
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Alireza Ghanipour
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Ji-Hyun Lee
- Electron Microscopy Group of Materials Science, Korea Basic Science Institute, Daejeon 34133, Republic of Korea
| | - Sang-Gil Lee
- Electron Microscopy Group of Materials Science, Korea Basic Science Institute, Daejeon 34133, Republic of Korea
| | - Jung Han Kim
- Department of Materials Science and Engineering, Dong-A University, Busan 49315, Republic of Korea
| | - Hee-Suk Chung
- Electron Microscopy Group of Materials Science, Korea Basic Science Institute, Daejeon 34133, Republic of Korea
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Yeonwoong Jung
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32826, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32826, United States
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5
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Sideri IK, Canton-Vitoria R, Ojeda-Galvan HJ, Quintana M, Tagmatarchis N. Sustainable Photocatalytic Acylation of Transition Metal Dichalcogenides with Atom Economy. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2311045. [PMID: 38229547 DOI: 10.1002/smll.202311045] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2023] [Revised: 01/03/2024] [Indexed: 01/18/2024]
Abstract
Transition metal dichalcogenides (TMDs) are promising 2D nanomaterials for diverse applications, but their intrinsic chemical inertness hinders their modification. Herein, a novel approach is presented for the photocatalytic acylation of 2H-MoS2 and 2H-MoSe2, utilizing tetrabutyl ammonium decatungstate ((nBu4N)4W10O32) polyoxometalate complex as a catalyst and a conventional halogen lamp as a source of irradiation. By harnessing the semiconducting properties of TMDs, new avenues emerge for the functionalization of these materials. This novel photocatalytic protocol constitutes the first report on the chemical modification of 2D nanomaterials based on a catalytic protocol and applies to both aliphatic and aromatic substrates. The scope of the decatungstate-photocatalyzed acylation reaction of TMDs is explored by employing an alkyl and an aromatic aldehyde and the success of the methodology is confirmed by diverse spectroscopic, thermal, microscopy imaging, and redox techniques. This catalytic approach on modifying 2D nanomaterials introduces the principles of atom economy in a functionalization protocol for TMDs. It marks a transformative shift toward more sustainable and efficient methodologies in the realm of TMD modification and nanomaterial chemistry.
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Affiliation(s)
- Ioanna K Sideri
- Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, Athens, 11635, Greece
| | - Ruben Canton-Vitoria
- Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, Athens, 11635, Greece
| | - Hiram J Ojeda-Galvan
- High Resolution Microscopy-CICSaB and Faculty of Science, Universidad Autonóma de San Luis Potosi, Av. Sierra Leona 550, Lomas de San Luis Potosi, SLP, 78210, Mexico
| | - Mildred Quintana
- High Resolution Microscopy-CICSaB and Faculty of Science, Universidad Autonóma de San Luis Potosi, Av. Sierra Leona 550, Lomas de San Luis Potosi, SLP, 78210, Mexico
| | - Nikos Tagmatarchis
- Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, Athens, 11635, Greece
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6
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Haider ASMR, Hezam AFAM, Islam MA, Arafat Y, Ferdaous MT, Salehin S, Karim MR. Temperature-dependent failure of atomically thin MoTe 2. J Mol Model 2024; 30:86. [PMID: 38413404 DOI: 10.1007/s00894-024-05883-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/12/2023] [Accepted: 02/20/2024] [Indexed: 02/29/2024]
Abstract
CONTEXT In this study, we investigated the mechanical responses of molybdenum ditelluride (MoTe2) using molecular dynamics (MD) simulations. Our key focus was on the tensile behavior of MoTe2 with trigonal prismatic phase (2H-MoTe2) which was investigated under uniaxial tensile stress for both armchair and zigzag directions. Crack formation and propagation were examined to understand the fracture behavior of such material for varying temperatures. Additionally, the study also assesses the impact of temperature on Young's modulus and fracture stress-strain of a monolayer of 2H-MoTe2. METHOD The investigation was done using molecular dynamics (MD) simulations using Stillinger-Weber (SW) potentials. The tensile behavior was simulated for temperature for 10 K and then from 100 to 600 K with a 100-K interval. The crack propagation and formation of 10 K and 300 K 2H-MoTe2 for both directions at different strain rates was analyzed using Ovito visualizer. All the simulations were conducted using a strain rate of 10-4 ps-1. The results show that the fracture strength of 2H-MoTe2 in the armchair and zigzag direction at 10 K is 16.33 GPa (11.43 N/m) and 13.71429 GPa (9.46 N/m) under a 24% and 18% fracture strain, respectively. The fracture strength of 2H-MoTe2 in the armchair and zigzag direction at 600 K is 10.81 GPa (7.56 N/m) and 10.13 GPa (7.09 N/m) under a 12.5% and 12.47% fracture strain, respectively.
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Affiliation(s)
- A S M Redwan Haider
- Depatment of Mechanical and Production Engineering, Islamic University of Technology, Gazipur, Bangladesh
| | | | - Md Akibul Islam
- Department of Mechanical and Industrial Engineering, University of Toronto, Toronto, Canada.
| | - Yeasir Arafat
- Depatment of Mechanical and Production Engineering, Islamic University of Technology, Gazipur, Bangladesh
| | - Mohammad Tanvirul Ferdaous
- Depatment of Mechanical and Production Engineering, Islamic University of Technology, Gazipur, Bangladesh
| | - Sayedus Salehin
- Depatment of Mechanical and Production Engineering, Islamic University of Technology, Gazipur, Bangladesh
| | - Md Rezwanul Karim
- Depatment of Mechanical and Production Engineering, Islamic University of Technology, Gazipur, Bangladesh.
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7
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Han SS, Sattar S, Kireev D, Shin JC, Bae TS, Ryu HI, Cao J, Shum AK, Kim JH, Canali CM, Akinwande D, Lee GH, Chung HS, Jung Y. Reversible Transition of Semiconducting PtSe 2 and Metallic PtTe 2 for Scalable All-2D Edge-Contacted FETs. NANO LETTERS 2024; 24:1891-1900. [PMID: 38150559 DOI: 10.1021/acs.nanolett.3c03666] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/29/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMD) layers are highly promising as field-effect transistor (FET) channels in the atomic-scale limit. However, accomplishing this superiority in scaled-up FETs remains challenging due to their van der Waals (vdW) bonding nature with respect to conventional metal electrodes. Herein, we report a scalable approach to fabricate centimeter-scale all-2D FET arrays of platinum diselenide (PtSe2) with in-plane platinum ditelluride (PtTe2) edge contacts, mitigating the aforementioned challenges. We realized a reversible transition between semiconducting PtSe2 and metallic PtTe2 via a low-temperature anion exchange reaction compatible with the back-end-of-line (BEOL) processes. All-2D PtSe2 FETs seamlessly edge-contacted with transited metallic PtTe2 exhibited significant performance improvements compared to those with surface-contacted gold electrodes, e.g., an increase of carrier mobility and on/off ratio by over an order of magnitude, achieving a maximum hole mobility of ∼50.30 cm2 V-1 s-1 at room temperature. This study opens up new opportunities toward atomically thin 2D-TMD-based circuitries with extraordinary functionalities.
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Affiliation(s)
- Sang Sub Han
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Shahid Sattar
- Department of Physics and Electrical Engineering, Linnaeus University, Kalmar SE-39231, Sweden
| | - Dmitry Kireev
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
- Department of Biomedical Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, United States
| | - June-Chul Shin
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Tae-Sung Bae
- Center for Research Equipment, Korea Basic Science Institute, Daejeon 34133, Republic of Korea
| | - Hyeon Ih Ryu
- Analytical Research Division, Korea Basic Science Institute, Jeonju 54907, Republic of Korea
| | | | | | - Jung Han Kim
- Department of Materials Science and Engineering, Dong-A University, Busan 49315, Republic of Korea
| | - Carlo Maria Canali
- Department of Physics and Electrical Engineering, Linnaeus University, Kalmar SE-39231, Sweden
| | - Deji Akinwande
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Hee-Suk Chung
- Electron Microscopy and Spectroscopy Team, Korea Basic Science Institute, Daejeon 34133, Republic of Korea
| | - Yeonwoong Jung
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
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8
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Lee YJ, Kim Y, Gim H, Hong K, Jang HW. Nanoelectronics Using Metal-Insulator Transition. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305353. [PMID: 37594405 DOI: 10.1002/adma.202305353] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Revised: 08/02/2023] [Indexed: 08/19/2023]
Abstract
Metal-insulator transition (MIT) coupled with an ultrafast, significant, and reversible resistive change in Mott insulators has attracted tremendous interest for investigation into next-generation electronic and optoelectronic devices, as well as a fundamental understanding of condensed matter systems. Although the mechanism of MIT in Mott insulators is still controversial, great efforts have been made to understand and modulate MIT behavior for various electronic and optoelectronic applications. In this review, recent progress in the field of nanoelectronics utilizing MIT is highlighted. A brief introduction to the physics of MIT and its underlying mechanisms is begun. After discussing the MIT behaviors of various Mott insulators, recent advances in the design and fabrication of nanoelectronics devices based on MIT, including memories, gas sensors, photodetectors, logic circuits, and artificial neural networks are described. Finally, an outlook on the development and future applications of nanoelectronics utilizing MIT is provided. This review can serve as an overview and a comprehensive understanding of the design of MIT-based nanoelectronics for future electronic and optoelectronic devices.
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Affiliation(s)
- Yoon Jung Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Youngmin Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Hyeongyu Gim
- Department of Materials Science and Engineering, Chonnam National University, Gwangju, 61186, Republic of Korea
| | - Kootak Hong
- Department of Materials Science and Engineering, Chonnam National University, Gwangju, 61186, Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
- Advanced Institute of Convergence Technology, Seoul National University, Suwon, 16229, Republic of Korea
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9
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Kim J, Lee J, Lee JM, Facchetti A, Marks TJ, Park SK. Recent Advances in Low-Dimensional Nanomaterials for Photodetectors. SMALL METHODS 2024; 8:e2300246. [PMID: 37203281 DOI: 10.1002/smtd.202300246] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2023] [Revised: 04/21/2023] [Indexed: 05/20/2023]
Abstract
New emerging low-dimensional such as 0D, 1D, and 2D nanomaterials have attracted tremendous research interests in various fields of state-of-the-art electronics, optoelectronics, and photonic applications due to their unique structural features and associated electronic, mechanical, and optical properties as well as high-throughput fabrication for large-area and low-cost production and integration. Particularly, photodetectors which transform light to electrical signals are one of the key components in modern optical communication and developed imaging technologies for whole application spectrum in the daily lives, including X-rays and ultraviolet biomedical imaging, visible light camera, and infrared night vision and spectroscopy. Today, diverse photodetector technologies are growing in terms of functionality and performance beyond the conventional silicon semiconductor, and low-dimensional nanomaterials have been demonstrated as promising potential platforms. In this review, the current states of progress on the development of these nanomaterials and their applications in the field of photodetectors are summarized. From the elemental combination for material design and lattice structure to the essential investigations of hybrid device architectures, various devices and recent developments including wearable photodetectors and neuromorphic applications are fully introduced. Finally, the future perspectives and challenges of the low-dimensional nanomaterials based photodetectors are also discussed.
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Affiliation(s)
- Jaehyun Kim
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Junho Lee
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
| | - Jong-Min Lee
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
| | - Antonio Facchetti
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Tobin J Marks
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Sung Kyu Park
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
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10
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Xu K, Holbrook M, Holtzman LN, Pasupathy AN, Barmak K, Hone JC, Rosenberger MR. Validating the Use of Conductive Atomic Force Microscopy for Defect Quantification in 2D Materials. ACS NANO 2023; 17:24743-24752. [PMID: 38095969 DOI: 10.1021/acsnano.3c05056] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
Defects significantly affect the electronic, chemical, mechanical, and optical properties of two-dimensional (2D) materials. Thus, it is critical to develop a method for convenient and reliable defect quantification. Scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) possess the required atomic resolution but have practical disadvantages. Here, we benchmark conductive atomic force microscopy (CAFM) by a direct comparison with STM in the characterization of transition metal dichalcogenides (TMDs). The results conclusively demonstrate that CAFM and STM image identical defects, giving results that are equivalent both qualitatively (defect appearance) and quantitatively (defect density). Further, we confirm that CAFM can achieve single-atom resolution, similar to that of STM, on both bulk and monolayer samples. The validation of CAFM as a facile and accurate tool for defect quantification provides a routine and reliable measurement that can complement other standard characterization techniques.
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Affiliation(s)
- Kaikui Xu
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Madisen Holbrook
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Luke N Holtzman
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - Abhay N Pasupathy
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Katayun Barmak
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - James C Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Matthew R Rosenberger
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
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11
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Sang Y, Xu M, Huang J, Jian L, Gao W, Sun Y, Zheng Z, Yan Y, Yang M, Li J. Polarization-sensitive UV photodetector based on ReSe 2/GaN mixed-dimensional heterojunction. OPTICS LETTERS 2023; 48:6108-6111. [PMID: 38039203 DOI: 10.1364/ol.505797] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Accepted: 10/24/2023] [Indexed: 12/03/2023]
Abstract
Polarization-sensitive photodetectors in the ultraviolet (UV) region have been favored for their great meaning in the field of military and civilian. UV photodetectors based on GaN have aroused much attention due to high photocurrent and high sensitivity. However, the dependence on external power sources and the limited sensitivity to polarized UV light significantly impede the practical application of these photodetectors in UV-polarized photodetection. Herein, a polarization-sensitive UV photodetector based on ReSe2/GaN mixed-dimensional van der Waals (vdWs) heterojunction is proposed. Owing to the high-quality junction and type-II band alignment, the responsivity and specific detectivity reach values of 870 mA/W and 6.8 × 1011 Jones, under 325 nm illumination, respectively. Furthermore, thanks to the strong in-plane anisotropy of ReSe2, the device is highly sensitive to polarized UV light with a photocurrent anisotropic ratio up to 6.67. The findings are expected to bring new opportunities for the development of highly sensitive, high-speed and energy-efficient polarization-sensitive photodetectors.
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12
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Liu S, Carey T, Munuera J, Synnatschke K, Kaur H, Coleman E, Doolan L, Coleman JN. Solution-Processed Heterojunction Photodiodes Based on WSe 2 Nanosheet Networks. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2304735. [PMID: 37735147 DOI: 10.1002/smll.202304735] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Revised: 08/25/2023] [Indexed: 09/23/2023]
Abstract
Solution-processed photodetectors incorporating liquid-phase-exfoliated transition metal dichalcogenide nanosheets are widely reported. However, previous studies mainly focus on the fabrication of photoconductors, rather than photodiodes which tend to be based on heterojunctions and are harder to fabricate. Especially, there are rare reports on introducing commonly used transport layers into heterojunctions based on nanosheet networks. In this study, a reliable solution-processing method is reported to fabricate heterojunction diodes with tungsten selenide (WSe2 ) nanosheets as the optical absorbing material and PEDOT: PSS and ZnO as injection/transport-layer materials. By varying the transport layer combinations, the obtained heterojunctions show rectification ratios of up to ≈104 at ±1 V in the dark, without relying on heavily doped silicon substrates. Upon illumination, the heterojunction can be operated in both photoconductor and photodiode modes and displays self-powered behaviors at zero bias.
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Affiliation(s)
- Shixin Liu
- School of Physics, CRANN & AMBER Research Centres, Trinity College, Dublin 2, Ireland
| | - Tian Carey
- School of Physics, CRANN & AMBER Research Centres, Trinity College, Dublin 2, Ireland
| | - Jose Munuera
- School of Physics, CRANN & AMBER Research Centres, Trinity College, Dublin 2, Ireland
- Department of Physics, Faculty of Sciences, University of Oviedo, C/Leopoldo Calvo Sotelo, 18 Oviedo, Asturias, 33007, Spain
| | - Kevin Synnatschke
- School of Physics, CRANN & AMBER Research Centres, Trinity College, Dublin 2, Ireland
| | - Harneet Kaur
- School of Physics, CRANN & AMBER Research Centres, Trinity College, Dublin 2, Ireland
| | - Emmet Coleman
- School of Physics, CRANN & AMBER Research Centres, Trinity College, Dublin 2, Ireland
| | - Luke Doolan
- School of Physics, CRANN & AMBER Research Centres, Trinity College, Dublin 2, Ireland
| | - Jonathan N Coleman
- School of Physics, CRANN & AMBER Research Centres, Trinity College, Dublin 2, Ireland
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13
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Fu W, John M, Maddumapatabandi TD, Bussolotti F, Yau YS, Lin M, Johnson Goh KE. Toward Edge Engineering of Two-Dimensional Layered Transition-Metal Dichalcogenides by Chemical Vapor Deposition. ACS NANO 2023; 17:16348-16368. [PMID: 37646426 DOI: 10.1021/acsnano.3c04581] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
Abstract
The manipulation of edge configurations and structures in atomically-thin transition metal dichalcogenides (TMDs) for versatile functionalization has attracted intensive interest in recent years. The chemical vapor deposition (CVD) approach has shown promise for TMD edge engineering of atomic edge configurations (1H, 1T or 1T'-zigzag or armchair edges) as well as diverse edge morphologies (1D nanoribbons, 2D dendrites, 3D spirals, etc.). These edge-rich TMD layers offer versatile candidates for probing the physical and chemical properties and exploring potential applications in electronics, optoelectronics, catalysis, sensing, and quantum technologies. In this Review, we present an overview of the current state-of-the-art in the manipulation of TMD atomic edges and edge-rich structures using CVD. We highlight the vast range of distinct properties associated with these edge configurations and structures and provide insights into the opportunities afforded by such edge-functionalized crystals. The objective of this Review is to motivate further research and development efforts to use CVD as a scalable approach to harness the benefits of such crystal-edge engineering.
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Affiliation(s)
- Wei Fu
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Mark John
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3 117551, Singapore
| | - Thathsara D Maddumapatabandi
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Fabio Bussolotti
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Yong Sean Yau
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Ming Lin
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3 117551, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore
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14
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Yu S, Dai Y, Huang B, Wei W. Charge-Transfer-Driven Phase Transition of Two-Dimensional MoTe 2 in Donor-Acceptor Heterostructures. J Phys Chem Lett 2023; 14:7946-7952. [PMID: 37646563 DOI: 10.1021/acs.jpclett.3c02082] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
Abstract
In this work, based on first-principles calculations, we propose that electrene can be considered as an electron-donating substrate to drive the phase transition of MoTe2 from the H to T' phase, which is a topic of long-standing interest and importance. In particular, new electrenes Ca2XN2 (X = Zr, Hf) are predicted with the existence of a nearly free two-dimensional (2D) electron gas and ultralow work functions. In MoTe2/Ca2XN2 donor-acceptor heterostructures, we find significantly large charge transfer (∼0.4e per MoTe2 unit cell) from Ca2XN2 to MoTe2, which stabilizes the T' phase and decreases the phase transition barrier (from ∼0.9 to ∼0.5 eV per unit cell). In addition, the phase transition of MoTe2 on Ca2XN2 remains effective as the interlayer distance varies. It therefore can be confirmed conclusively that our results open a new avenue for phase transition study and provide new insights for the large-scale synthesis of metastable high-quality T'-phase MoTe2.
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Affiliation(s)
- Shiqiang Yu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Wei Wei
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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15
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Pang L, Wang R, Zhao Q, Zhao M, Jiang L, Zhang X, Wu R, Lv Y, Liu W. InSb-based saturable absorbers for ultrafast photonic applications. NANOSCALE 2023. [PMID: 37470403 DOI: 10.1039/d3nr01416a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/21/2023]
Abstract
Sb-related III-V compounds have recently gained great research interest owing to their excellent optical and electrical characteristics, which provide many possibilities in photonics and electronics. This study investigated the application of InSb films in ultrafast photonics. An InSb film was fabricated on the tapered zone of a microfiber, and its saturation intensity, modulation depth, and non-saturable loss were determined as 119.8 MW cm-2, 23.5%, and 27.3%, respectively. The structure of the electronic band and density of states of InSb were theoretically calculated. Notably, mode-locked and Q-switched fiber lasers were realised by incorporating the InSb-microfiber device into two different Er-doped fiber cavities. In the Q-switching state, the narrowest pulse duration was measured as 1.756 μs with a maximum single-pulse energy of 221.95 nJ and a signal-to-noise ratio of 60 dB. In the mode-locking operation, ultrafast lasers with a high signal-to-noise ratio (70 dB), a pulse width as narrow as 265 fs and a repetition rate of 49.51 MHz were acquired. Besides, the second-harmonic mode-locked state was built with an output power of 13.22 mW. In comparison with the reported laser performance with 2D materials as saturable absorbers, the InSb-based mode-locked and Q-switched fiber lasers proposed herein exhibit better comprehensive performance.
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Affiliation(s)
- Lihui Pang
- Shaanxi Provincial Center for Regenerative Medicine and Surgical Engineering, First Affiliated Hospital, Xi'an Jiaotong University, Xi'an 710061, China.
- National Local Joint Engineering Research Center of Precise Surgery & Regenerative Medicine, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an 710061, China
| | - Rongfeng Wang
- Shaanxi Provincial Center for Regenerative Medicine and Surgical Engineering, First Affiliated Hospital, Xi'an Jiaotong University, Xi'an 710061, China.
- National Local Joint Engineering Research Center of Precise Surgery & Regenerative Medicine, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an 710061, China
| | - Qiyi Zhao
- School of Science, Xi'an University of Posts and Telecommunications, Xi'an 710121, China
| | - Meng Zhao
- Shaanxi Provincial Center for Regenerative Medicine and Surgical Engineering, First Affiliated Hospital, Xi'an Jiaotong University, Xi'an 710061, China.
- National Local Joint Engineering Research Center of Precise Surgery & Regenerative Medicine, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an 710061, China
| | - Le Jiang
- Shaanxi Provincial Center for Regenerative Medicine and Surgical Engineering, First Affiliated Hospital, Xi'an Jiaotong University, Xi'an 710061, China.
- National Local Joint Engineering Research Center of Precise Surgery & Regenerative Medicine, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an 710061, China
| | - Xiaogang Zhang
- Shaanxi Provincial Center for Regenerative Medicine and Surgical Engineering, First Affiliated Hospital, Xi'an Jiaotong University, Xi'an 710061, China.
| | - Rongqian Wu
- Shaanxi Provincial Center for Regenerative Medicine and Surgical Engineering, First Affiliated Hospital, Xi'an Jiaotong University, Xi'an 710061, China.
- National Local Joint Engineering Research Center of Precise Surgery & Regenerative Medicine, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an 710061, China
| | - Yi Lv
- Shaanxi Provincial Center for Regenerative Medicine and Surgical Engineering, First Affiliated Hospital, Xi'an Jiaotong University, Xi'an 710061, China.
- National Local Joint Engineering Research Center of Precise Surgery & Regenerative Medicine, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an 710061, China
| | - Wenjun Liu
- State Key Laboratory of Information Photonics and Optical Communications, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China.
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16
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Li M, Gao M, Zhang Q, Yang Y. Valley-dependent vortex emission from exciton-polariton in non-centrosymmetric transition metal dichalcogenide metasurfaces. OPTICS EXPRESS 2023; 31:19622-19631. [PMID: 37381373 DOI: 10.1364/oe.490067] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2023] [Accepted: 05/18/2023] [Indexed: 06/30/2023]
Abstract
Transition metal dichalcogenides (TMDs) have attracted great attention in valleytronics. Owing to the giant valley coherence at room temperature, valley pseudospin of TMDs open a new degree of freedom to encode and process binary information. The valley pseudospin only exists in non-centrosymmetric TMDs (e.g., monolayer or 3R-stacked multilayer), which is prohibited in conventional centrosymmetric 2H-stacked crystals. Here, we propose a general recipe to generate valley-dependent vortex beams by using a mix-dimensional TMD metasurface composed of nanostructured 2H-stacked TMD crystals and monolayer TMDs. Such an ultrathin TMD metasurface involves a momentum-space polarization vortex around bound states in the continuum (BICs), which can simultaneously achieve strong coupling (i.e., form exciton polaritons) and valley-locked vortex emission. Moreover, we report that a full 3R-stacked TMD metasurface can also reveal the strong-coupling regime with an anti-crossing pattern and a Rabi splitting of 95 meV. The Rabi splitting can be precisely controlled by geometrically shaping the TMD metasurface. Our results provide an ultra-compact TMD platform for controlling and structuring valley exciton polariton, in which the valley information is linked with the topological charge of vortex emission, which may advance valleytronic, polaritonic, and optoelectronic applications.
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17
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Li Y, Liao H, Wu S, Weng X, Wang Y, Liu L, Qu J, Song J, Ye S, Yu X, Chen Y. ReS 2 Nanoflowers-Assisted Confined Growth of Gold Nanoparticles for Ultrasensitive and Reliable SERS Sensing. Molecules 2023; 28:molecules28114288. [PMID: 37298764 DOI: 10.3390/molecules28114288] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/25/2023] [Revised: 05/18/2023] [Accepted: 05/22/2023] [Indexed: 06/12/2023] Open
Abstract
ReS2, as a new member of transition metal dichalcogenides (TMDCs), has emerged as a promising substrate for semiconductor surface-enhanced Raman spectroscopy (SERS) due to its unique optoelectronic properties. Nevertheless, the sensitivity of the ReS2 SERS substrate poses a significant challenge to its widespread application in trace detection. In this work, we present a reliable approach for constructing a novel ReS2/AuNPs SERS composite substrate, enabling ultrasensitive detection of trace amounts of organic pesticides. We demonstrate that the porous structures of ReS2 nanoflowers can effectively confine the growth of AuNPs. By precisely controlling the size and distribution of AuNPs, numerous efficient and densely packed "hot spots" were created on the surface of ReS2 nanoflowers. As a result of the synergistic enhancement of the chemical and electromagnetic mechanisms, the ReS2/AuNPs SERS substrate demonstrates high sensitivity, good reproducibility, and superior stability in detecting typical organic dyes such as rhodamine 6G and crystalline violet. The ReS2/AuNPs SERS substrate shows an ultralow detection limit of 10-10 M and a linear detection of organic pesticide molecules within 10-6-10-10 M, which is significantly lower than the EU Environmental Protection Agency regulation standards. The strategy of constructing ReS2/AuNPs composites would contribute to the development of highly sensitive and reliable SERS sensing platforms for food safety monitoring.
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Affiliation(s)
- Yongping Li
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
| | - Haohui Liao
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
| | - Shaobing Wu
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
| | - Xiaoyu Weng
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
| | - Yiping Wang
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
| | - Liwei Liu
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
| | - Junle Qu
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
| | - Jun Song
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
| | - Shuai Ye
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
| | - Xiantong Yu
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
| | - Yu Chen
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
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18
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Zhu K, Tao Y, Clark DE, Hong W, Li CW. Solution-Phase Synthesis of Vanadium Intercalated 1T'-WS 2 with Tunable Electronic Properties. NANO LETTERS 2023; 23:4471-4478. [PMID: 37155184 DOI: 10.1021/acs.nanolett.3c00826] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Metal ion intercalation into Group VI transition metal dichalcogenides enables control over their carrier transport properties. In this work, we demonstrate a low-temperature, solution-phase synthetic method to intercalate cationic vanadium complexes into bulk WS2. Vanadium intercalation expands the interlayer spacing from 6.2 to 14.2 Å and stabilizes the 1T' phase of WS2. Kelvin-probe force microscopy measurements indicate that vanadium binding in the van der Waals gap causes an increase in the Fermi level of 1T'-WS2 by 80 meV due to hybridization of vanadium 3d orbitals with the conduction band of the TMD. As a result, the carrier type switches from p-type to n-type, and carrier mobility increases by an order of magnitude relative to the Li-intercalated precursor. Both the conductivity and thermal activation barrier for carrier transport are readily tuned by varying the concentration of VCl3 during the cation-exchange reaction.
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Affiliation(s)
- Kuixin Zhu
- Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States
| | - Yiyin Tao
- Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States
| | - Daniel E Clark
- Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States
| | - Wei Hong
- Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States
| | - Christina W Li
- Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States
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19
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Ren Y, He Q, Xu T, Zhang W, Peng Z, Meng B. Recent Progress in MXene Hydrogel for Wearable Electronics. BIOSENSORS 2023; 13:bios13050495. [PMID: 37232856 DOI: 10.3390/bios13050495] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2023] [Revised: 04/06/2023] [Accepted: 04/18/2023] [Indexed: 05/27/2023]
Abstract
Recently, hydrogels have attracted great attention because of their unique properties, including stretchability, self-adhesion, transparency, and biocompatibility. They can transmit electrical signals for potential applications in flexible electronics, human-machine interfaces, sensors, actuators, et al. MXene, a newly emerged two-dimensional (2D) nanomaterial, is an ideal candidate for wearable sensors, benefitting from its surface's negatively charged hydrophilic nature, biocompatibility, high specific surface area, facile functionalization, and high metallic conductivity. However, stability has been a limiting factor for MXene-based applications, and fabricating MXene into hydrogels has been proven to significantly improve their stability. The unique and complex gel structure and gelation mechanism of MXene hydrogels require intensive research and engineering at nanoscale. Although the application of MXene-based composites in sensors has been widely studied, the preparation methods and applications of MXene-based hydrogels in wearable electronics is relatively rare. Thus, in order to facilitate the effective evolution of MXene hydrogel sensors, the design strategies, preparation methods, and applications of MXene hydrogels for flexible and wearable electronics are comprehensively discussed and summarized in this work.
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Affiliation(s)
- Yi Ren
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Qi He
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Tongyi Xu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Weiguan Zhang
- Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen 518107, China
| | - Zhengchun Peng
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Bo Meng
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
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20
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Kim KT, Kim T, Jeong Y, Park S, Kim J, Cho H, Cha SK, Kim YS, Bae H, Yi Y, Im S. Self-Assembled TaO X/2H-TaS 2 as a van der Waals Platform of a Multilevel Memristor Circuit Integrated with a β-Ga 2O 3 Transistor. ACS NANO 2023; 17:3666-3675. [PMID: 36795495 DOI: 10.1021/acsnano.2c10596] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D)-layered material tantalum disulfide (2H-TaS2) is known to be a van der Waals conductor at room temperature. Here, 2D-layered TaS2 has been partially oxidized by utraviolet-ozone (UV-O3) annealing to form a 12-nm-thin TaOX on conducting TaS2, so that the TaOX/2H-TaS2 structure might be self-assembled. Utilizing the TaOX/2H-TaS2 structure as a platform, each device of a β-Ga2O3 channel MOSFET and a TaOX memristor has been successfully fabricated. An insulator structure of Pt/TaOX/2H-TaS2 shows good a dielectric constant (k ∼ 21) and strength (∼3 MV/cm) of achieved TaOX, which is enough to support a β-Ga2O3 transistor channel. Based on the quality of TaOX and low trap density of the TaOX/β-Ga2O3 interface, which is achieved via another UV-O3 annealing, excellent device properties such as little hysteresis (<∼0.04 V), band-like transport, and a steep subthreshold swing of ∼85 mV/dec are achieved. With a Cu electrode on top of the TaOX/2H-TaS2 structure, the TaOX acts as a memristor operating around ∼2 V for nonvolatile bipolar and unipolar mode memories. The functionalities of the TaOX/2H-TaS2 platform become more distinguished finally when the Cu/TaOX/2H-TaS2 memristor and β-Ga2O3 MOSFET are integrated to form a resistive memory switching circuit. The circuit nicely demonstrates the multilevel memory functions.
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Affiliation(s)
- Ki-Tae Kim
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Taewook Kim
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Yeonsu Jeong
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Sam Park
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Junho Kim
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Hyunmin Cho
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Sun-Kyung Cha
- Korea Research Institute of Standards and Science, 267, Gajeong-ro, Yuseong-gu, Daejeon, 34113, Republic of Korea
| | - Yong-Sung Kim
- Korea Research Institute of Standards and Science, 267, Gajeong-ro, Yuseong-gu, Daejeon, 34113, Republic of Korea
| | - Heesun Bae
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Yeonjin Yi
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Seongil Im
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
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21
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Xu T, Li A, Wang S, Tan Y, Cheng X. Phase-Controllable Chemical Vapor Deposition Synthesis of Atomically Thin MoTe 2. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4133. [PMID: 36500756 PMCID: PMC9737202 DOI: 10.3390/nano12234133] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/01/2022] [Revised: 11/21/2022] [Accepted: 11/21/2022] [Indexed: 06/17/2023]
Abstract
Two-dimensional (2D) molybdenum telluride (MoTe2) is attracting increasing attention for its potential applications in electronic, optoelectronic, photonic and catalytic fields, owing to the unique band structures of both stable 2H phase and 1T′ phase. However, the direct growth of high-quality atomically thin MoTe2 with the controllable proportion of 2H and 1T′ phase seems hard due to easy phase transformation since the potential barrier between the two phases is extremely small. Herein, we report a strategy of the phase-controllable chemical vapor deposition (CVD) synthesis for few-layer (<3 layer) MoTe2. Besides, a new understanding of the phase-controllable growth mechanism is presented based on a combination of experimental results and DFT calculations. The lattice distortion caused by Te vacancies or structural strain might make 1T′-MoTe2 more stable. The conditions for 2H to 1T′ phase conversion are determined to be the following: Te monovacancies exceeding 4% or Te divacancies exceeding 8%, or lattice strain beyond 6%. In contrast, sufficient Te supply and appropriate tellurization velocity are essential to obtaining the prevailing 2H-MoTe2. Our work provides a novel perspective on the preparation of 2D transition metal chalcogenides (TMDs) with the controllable proportion of 2H and 1T′ phase and paves the way to their subsequent potential application of these hybrid phases.
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Affiliation(s)
- Tao Xu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Aolin Li
- Powder Metallurgy Research Institute, Central South University, Changsha 410073, China
| | - Shanshan Wang
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073, China
| | - Yinlong Tan
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Xiang’ai Cheng
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
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22
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Jin T, Mao J, Gao J, Han C, Loh KP, Wee ATS, Chen W. Ferroelectrics-Integrated Two-Dimensional Devices toward Next-Generation Electronics. ACS NANO 2022; 16:13595-13611. [PMID: 36099580 DOI: 10.1021/acsnano.2c07281] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ferroelectric materials play an important role in a wide spectrum of semiconductor technologies and device applications. Two-dimensional (2D) van der Waals (vdW) ferroelectrics with surface-insensitive ferroelectricity that is significantly different from their traditional bulk counterparts have further inspired intensive interest. Integration of ferroelectrics into 2D-layered-material-based devices is expected to offer intriguing working principles and add desired functionalities for next-generation electronics. Herein, fundamental properties of ferroelectric materials that are compatible with 2D devices are introduced, followed by a critical review of recent advances on the integration of ferroelectrics into 2D devices. Representative device architectures and corresponding working mechanisms are discussed, such as ferroelectrics/2D semiconductor heterostructures, 2D ferroelectric tunnel junctions, and 2D ferroelectric diodes. By leveraging the favorable properties of ferroelectrics, a variety of functional 2D devices including ferroelectric-gated negative capacitance field-effect transistors, programmable devices, nonvolatile memories, and neuromorphic devices are highlighted, where the application of 2D vdW ferroelectrics is particularly emphasized. This review provides a comprehensive understanding of ferroelectrics-integrated 2D devices and discusses the challenges of applying them into commercial electronic circuits.
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Affiliation(s)
- Tengyu Jin
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Jingyu Mao
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Jing Gao
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Cheng Han
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Kian Ping Loh
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Wei Chen
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
- National University of Singapore (Suzhou) Research Institute, 377 Lin Quan Street, Suzhou Industrial Park, Suzhou 215123, P. R. China
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23
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Li T, Deng Y, Rong X, He C, Zhou M, Tang Y, Zhou H, Cheng C, Zhao C. Nanostructures and catalytic atoms engineering of tellurium‐based materials and their roles in electrochemical energy conversion. SMARTMAT 2022. [DOI: 10.1002/smm2.1142] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Affiliation(s)
- Tiantian Li
- State Key Laboratory of Polymer Materials Engineering, College of Polymer Science and Engineering Sichuan University Chengdu China
| | - Yuting Deng
- State Key Laboratory of Polymer Materials Engineering, College of Polymer Science and Engineering Sichuan University Chengdu China
| | - Xiao Rong
- Department of Nephrology, Department of Ultrasound, West China Hospital Sichuan University Chengdu China
| | - Chao He
- State Key Laboratory of Polymer Materials Engineering, College of Polymer Science and Engineering Sichuan University Chengdu China
- Department of Physics, Chemistry and Pharmacy, Danish Institute for Advanced Study (DIAS) University of Southern Denmark Odense Denmark
| | - Mi Zhou
- State Key Laboratory of Polymer Materials Engineering, College of Polymer Science and Engineering Sichuan University Chengdu China
| | - Yuanjiao Tang
- Department of Nephrology, Department of Ultrasound, West China Hospital Sichuan University Chengdu China
| | - Hongju Zhou
- Department of Nephrology, Department of Ultrasound, West China Hospital Sichuan University Chengdu China
| | - Chong Cheng
- State Key Laboratory of Polymer Materials Engineering, College of Polymer Science and Engineering Sichuan University Chengdu China
- Med‐X Center for Materials Sichuan University Chengdu China
| | - Changsheng Zhao
- State Key Laboratory of Polymer Materials Engineering, College of Polymer Science and Engineering Sichuan University Chengdu China
- Med‐X Center for Materials Sichuan University Chengdu China
- College of Chemical Engineering Sichuan University Chengdu China
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24
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Batool S, Idrees M, Zhang SR, Han ST, Zhou Y. Novel charm of 2D materials engineering in memristor: when electronics encounter layered morphology. NANOSCALE HORIZONS 2022; 7:480-507. [PMID: 35343522 DOI: 10.1039/d2nh00031h] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The family of two-dimensional (2D) materials composed of atomically thin layers connected via van der Waals interactions has attracted much curiosity due to a variety of intriguing physical, optical, and electrical characteristics. The significance of analyzing statistics on electrical devices and circuits based on 2D materials is seldom underestimated. Certain requirements must be met to deliver scientific knowledge that is beneficial in the field of 2D electronics: synthesis and fabrication must occur at the wafer level, variations in morphology and lattice alterations must be visible and statistically verified, and device dimensions must be appropriate. The authors discussed the most recent significant concerns of 2D materials in the provided prose and attempted to highlight the prerequisites for synthesis, yield, and mechanism behind device-to-device variability, reliability, and durability benchmarking under memristors characteristics; they also indexed some useful approaches that have already been reported to be advantageous in large-scale production. Commercial applications, on the other hand, will necessitate further effort.
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Affiliation(s)
- Saima Batool
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Muhammad Idrees
- Additive Manufacturing Institute, College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Shi-Rui Zhang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Su-Ting Han
- College of Electronics Science & Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
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25
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Atomic Layer Deposition of Ultrathin La2O3/Al2O3 Nanolaminates on MoS2 with Ultraviolet Ozone Treatment. MATERIALS 2022; 15:ma15051794. [PMID: 35269024 PMCID: PMC8911297 DOI: 10.3390/ma15051794] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/25/2022] [Revised: 02/21/2022] [Accepted: 02/25/2022] [Indexed: 12/10/2022]
Abstract
Due to the chemically inert surface of MoS2, uniform deposition of ultrathin high-κ dielectric using atomic layer deposition (ALD) is difficult. However, this is crucial for the fabrication of field-effect transistors (FETs). In this work, the atomic layer deposition growth of sub-5 nm La2O3/Al2O3 nanolaminates on MoS2 using different oxidants (H2O and O3) was investigated. To improve the deposition, the effects of ultraviolet ozone treatment on MoS2 surface are also evaluated. It is found that the physical properties and electrical characteristics of La2O3/Al2O3 nanolaminates change greatly for different oxidants and treatment processes. These changes are found to be associated with the residual of metal carbide caused by the insufficient interface reactions. Ultraviolet ozone pretreatment can substantially improve the initial growth of sub-5 nm H2O-based or O3-based La2O3/Al2O3 nanolaminates, resulting in a reduction of residual metal carbide. All results indicate that O3-based La2O3/Al2O3 nanolaminates on MoS2 with ultraviolet ozone treatment yielded good electrical performance with low leakage current and no leakage dot, revealing a straightforward approach for realizing sub-5 nm uniform La2O3/Al2O3 nanolaminates on MoS2.
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26
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Low-Dimensional Layered Light-Sensitive Memristive Structures for Energy-Efficient Machine Vision. ELECTRONICS 2022. [DOI: 10.3390/electronics11040619] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Abstract
Layered two-dimensional (2D) and quasi-zero-dimensional (0D) materials effectively absorb radiation in the wide ultraviolet, visible, infrared, and terahertz ranges. Photomemristive structures made of such low-dimensional materials are of great interest for creating optoelectronic platforms for energy-efficient storage and processing of data and optical signals in real time. Here, photosensor and memristor structures based on graphene, graphene oxide, bismuth oxyselenide, and transition metal dichalcogenides are reviewed from the point of view of application in broadband image recognition in artificial intelligence systems for autonomous unmanned vehicles, as well as the compatibility of the formation of layered neuromorphic structures with CMOS technology.
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27
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Xing J, Shi H, Li Y, Liu J. Molecular dynamics study of Cr doping on the crystal structure and surficial/interfacial properties of 2H-MoS 2. Phys Chem Chem Phys 2022; 24:4547-4554. [PMID: 35129194 DOI: 10.1039/d1cp05199g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Molecular doping has proved to be an efficient technique to improve the properties of pristine materials. A better understanding of it is quite necessary. For the first time, the force field parameters of the transition metal chromium (Cr) doped in 2H-MoS2 in molecular dynamics (MD) were developed. Compared with the DFT calculation results, the error in the stable-state lattice parameters is less than 1%. The optimized force field parameters were used for the MD simulation of different amounts of Cr substitution doping in 2H-MoS2. This study found that the Cr doping at different sites will have a significant impact on the stability of the bulk 2H-MoS2. With increasing doping amount, the water contact angle increases from 69.2° ± 2° to 78.5° ± 0.4°, and the hydrophobic performance is obviously improved. Finally, we also found that the adsorption energy of Cr-MoS2 decreased with increasing Cr doping content, indicating that bulk MoS2 is easier to separate to form single- or fewer-layer 2H-MoS2 in the case of higher doping content. Comparison between the simulated adsorption energies of typical solvents on the 2H-MoS2 surface shows that methanol (CH3OH) and water (H2O) can separate bulk 2H-MoS2, which matched with the experimental results. By using high-precision force field parameters, molecular dynamics were performed to study the surface/interface characteristics of Cr-doped 2H-MoS2, and provided an effective and detailed description for future experimental design.
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Affiliation(s)
- Jiqi Xing
- Department of Materials Science and Engineering, Dalian Maritime University, Dalian, Liaoning, 116026, P. R. China.
| | - Hongyu Shi
- Department of Materials Science and Engineering, Dalian Maritime University, Dalian, Liaoning, 116026, P. R. China.
| | - Yingdi Li
- Department of Materials Science and Engineering, Dalian Maritime University, Dalian, Liaoning, 116026, P. R. China.
| | - Juan Liu
- Department of Materials Science and Engineering, Dalian Maritime University, Dalian, Liaoning, 116026, P. R. China.
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28
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Gong CH, Hu XZ, Han Z, Liu XF, Yang MZ, Zang SQ. Epitaxial coordination assembly of a semi-conductive silver-chalcogenide layer-based MOF. Chem Commun (Camb) 2022; 58:1788-1791. [PMID: 35039813 DOI: 10.1039/d1cc07160b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
Using a carboxylic acid linker, this work achieved the epitaxially coordinated assembly of a Ag-S layer into a three-dimensional semi-conductive framework, with high thermal stability, as well as an interesting temperature-dependent luminescence response. This work provides a new avenue to prepare semi-conductive metal-chalcogenide layer-based materials in electricity-related applications.
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Affiliation(s)
- Chun-Hua Gong
- Henan Key Laboratory of Crystalline Molecular Functional Materials, Henan International Joint Laboratory of Tumor Theranostical Cluster Materials, Green Catalysis Center, and College of Chemistry, Zhengzhou University, Zhengzhou 450001, China.
| | - Xiao-Zong Hu
- Henan Key Laboratory of Crystalline Molecular Functional Materials, Henan International Joint Laboratory of Tumor Theranostical Cluster Materials, Green Catalysis Center, and College of Chemistry, Zhengzhou University, Zhengzhou 450001, China.
| | - Zhen Han
- Henan Key Laboratory of Crystalline Molecular Functional Materials, Henan International Joint Laboratory of Tumor Theranostical Cluster Materials, Green Catalysis Center, and College of Chemistry, Zhengzhou University, Zhengzhou 450001, China.
| | - Xiao-Fei Liu
- Henan Key Laboratory of Crystalline Molecular Functional Materials, Henan International Joint Laboratory of Tumor Theranostical Cluster Materials, Green Catalysis Center, and College of Chemistry, Zhengzhou University, Zhengzhou 450001, China.
| | - Min-Zi Yang
- Henan Key Laboratory of Crystalline Molecular Functional Materials, Henan International Joint Laboratory of Tumor Theranostical Cluster Materials, Green Catalysis Center, and College of Chemistry, Zhengzhou University, Zhengzhou 450001, China.
| | - Shuang-Quan Zang
- Henan Key Laboratory of Crystalline Molecular Functional Materials, Henan International Joint Laboratory of Tumor Theranostical Cluster Materials, Green Catalysis Center, and College of Chemistry, Zhengzhou University, Zhengzhou 450001, China.
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29
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Sajjan M, Sureshbabu SH, Kais S. Quantum Machine-Learning for Eigenstate Filtration in Two-Dimensional Materials. J Am Chem Soc 2021; 143:18426-18445. [PMID: 34705449 DOI: 10.1021/jacs.1c06246] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Quantum machine-learning algorithms have emerged to be a promising alternative to their classical counterparts as they leverage the power of quantum computers. Such algorithms have been developed to solve problems like electronic structure calculations of molecular systems and spin models in magnetic systems. However, the discussion in all these recipes focuses specifically on targeting the ground state. Herein we demonstrate a quantum algorithm that can filter any energy eigenstate of the system based on either symmetry properties or a predefined choice of the user. The workhorse of our technique is a shallow neural network encoding the desired state of the system with the amplitude computed by sampling the Gibbs-Boltzmann distribution using a quantum circuit and the phase information obtained classically from the nonlinear activation of a separate set of neurons. We show that the resource requirements of our algorithm are strictly quadratic. To demonstrate its efficacy, we use state filtration in monolayer transition metal dichalcogenides which are hitherto unexplored in any flavor of quantum simulations. We implement our algorithm not only on quantum simulators but also on actual IBM-Q quantum devices and show good agreement with the results procured from conventional electronic structure calculations. We thus expect our protocol to provide a new alternative in exploring the band structures of exquisite materials to usual electronic structure methods or machine-learning techniques that are implementable solely on a classical computer.
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Affiliation(s)
- Manas Sajjan
- Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States
| | - Shree Hari Sureshbabu
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Sabre Kais
- Department of Chemistry, Department of Physics and Astronomy, and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, Indiana 47907, United States
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30
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Hwa KY, Ganguly A, Santhan A, Kanna Sharma TS. Vanadium selenide decorated reduced graphene oxide nanocomposite: A co-active catalyst for the detection of 2,4,6 - Trichlorophenol. CHEMOSPHERE 2021; 282:130874. [PMID: 34087558 DOI: 10.1016/j.chemosphere.2021.130874] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2020] [Revised: 05/07/2021] [Accepted: 05/10/2021] [Indexed: 06/12/2023]
Abstract
Transition metal chalcogenides (TMCs) have great potential in diverse electrochemical technologies owing to their unique characteristics. In the present work, we portray the design and synthesis of Vanadium selenide (V2Se9)/reduced graphene oxide (rGO) forming a two-dimensional (2D) hybrid nanocomposite via a simple hydrothermal method. The successfully synthesized nanocomposite underwent in-depth surface and morphological characterizations by XRD, Raman spectroscopy, XPS, TEM, STEM and its potential as an electro catalyst was investigated by using glassy carbon electrode (GCE) for the detection of 2,4,6-trichlorophenol (TCP). The structural features favored a high charge transfer ratio, high surface area as well as excellent conductivity and catalytic activity. The V2Se9/rGO/GCE modified electrode showed a low charge transfer resistance (Rct) of 54.057 Ω cm2, a decent detection limit (LOD) of 35.07 nM and a very high sensitivity of 22 μA μM-1 cm-2 in a working range of 0.001 μM-1150 μM. This is due to the active proton interaction, surface enhancement, and positive synergistic effect between rGO and V2Se9. The proposed sensor has good detection potential in agricultural soil, river water, fish, and beverage samples like wine and apple juice. The obtained results from our investigation would elucidate the application of the catalyst in electrochemical sensors.
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Affiliation(s)
- Kuo-Yuan Hwa
- Graduate Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei, Taiwan; Department of Molecular Science and Engineering, National Taipei University of Technology, Taipei, Taiwan; Center for Biomedical Industry, National Taipei University of Technology, Taipei, Taiwan.
| | - Anindita Ganguly
- Department of Molecular Science and Engineering, National Taipei University of Technology, Taipei, Taiwan; International Graduate Program in Energy and Optoelectronic Materials, National Taipei University of Technology, Taipei, Taiwan
| | - Aravindan Santhan
- Department of Molecular Science and Engineering, National Taipei University of Technology, Taipei, Taiwan; International Graduate Program in Energy and Optoelectronic Materials, National Taipei University of Technology, Taipei, Taiwan
| | - Tata Sanjay Kanna Sharma
- Graduate Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei, Taiwan; Department of Molecular Science and Engineering, National Taipei University of Technology, Taipei, Taiwan
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Jin S, Kwon JD, Kim Y. Statistical Analysis of Uniform Switching Characteristics of Ta 2O 5-Based Memristors by Embedding In-Situ Grown 2D-MoS 2 Buffer Layers. MATERIALS 2021; 14:ma14216275. [PMID: 34771802 PMCID: PMC8584643 DOI: 10.3390/ma14216275] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/07/2021] [Revised: 10/15/2021] [Accepted: 10/18/2021] [Indexed: 12/03/2022]
Abstract
A memristor based on emerging resistive random-access memory (RRAM) is a promising candidate for use as a next-generation neuromorphic computing device which overcomes the von Neumann bottleneck. Meanwhile, due to their unique properties, including atomically thin layers and surface smoothness, two-dimensional (2D) materials are being widely studied for implementation in the development of new information-processing electronic devices. However, inherent drawbacks concerning operational uniformities, such as device-to-device variability, device yield, and reliability, are huge challenges in the realization of concrete memristor hardware devices. In this study, we fabricated Ta2O5-based memristor devices, where a 2D-MoS2 buffer layer was directly inserted between the Ta2O5 switching layer and the Ag metal electrode to improve uniform switching characteristics in terms of switching voltage, the distribution of resistance states, endurance, and retention. A 2D-MoS2 layered buffer film with a 5 nm thickness was directly grown on the Ta2O5 switching layer by the atomic-pressure plasma-enhanced chemical vapor deposition (AP-PECVD) method, which is highly uniform and provided a superior yield of 2D-MoS2 film. It was observed that the switching operation was dramatically stabilized via the introduction of the 2D-MoS2 buffer layer compared to a pristine device without the buffer layer. It was assumed that the difference in mobility and reduction rates between Ta2O5 and MoS2 caused the narrow localization of ion migration, inducing the formation of more stable conduction filament. In addition, an excellent yield of 98% was confirmed while showing cell-to-cell operation uniformity, and the extrinsic and intrinsic variabilities in operating the device were highly uniform. Thus, the introduction of a MoS2 buffer layer could improve highly reliable memristor device switching operation.
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Affiliation(s)
- Soeun Jin
- Department of Advanced Materials Engineering, University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, Korea;
| | - Jung-Dae Kwon
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon 51508, Korea
- Correspondence: (J.-D.K.); (Y.K.)
| | - Yonghun Kim
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon 51508, Korea
- Correspondence: (J.-D.K.); (Y.K.)
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32
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Zhong HX, Liu SM, Cen YL, Zhang M, Zhu YH, Du J, He Y, Guo WH, Wang XQ, Shi JJ. Layered Dion-Jacobson-Type Chalcogenide Perovskite CsLaM 2X 7 (M = Ta/Nb; X = S/Se) with a Narrow Band Gap of ∼1 eV as a Promising Rear Cell for All-Perovskite Tandem Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2021; 13:48971-48980. [PMID: 34612640 DOI: 10.1021/acsami.1c10318] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Perovskite-perovskite tandem solar cells have bright prospects to improve the power conversion efficiency (PCE) beyond the Shockley-Queisser (SQ) limit of single-junction solar cells. The star lead-based halide perovskites are well-recognized as suitable candidates for the front cell, thanks to their suitable band gap (∼1.8 eV), strong optical absorption, and high certified PCE. However, the toxicity of lead for the front cell and the lack of a narrow band gap (∼1.1 eV) for the rear cell seriously restrict the development of the two-junction tandem cell. To break through this bottleneck, a novel Dion-Jacobson (DJ)-type (n = 2) chalcogenide perovskite CsLaM2X7 (M = Ta, Nb; X = S, Se) has been found based on the powerful first-principles and advanced many-body perturbation GW calculations. Their excellent electronic, transport, and optical properties can be summarized as follows. (1) They are stable and environmentally friendly lead-free materials. (2) The direct band gap of CsLaTa2Se7 (0.96-1.10 eV) is much smaller than those of lead-based halide perovskites and very suitable for the rear cell in the two-junction tandem cell. (3) The carrier mobility in CsLaTa2Se7 reaches 1.6 × 103 cm2 V-1 s-1 at room temperature. (4) The absorption coefficients (3-5 × 105 cm-1) are 1 order higher than that of Si (104 cm-1). (5) The estimated PCEs of the Cs2Sb2Br8-CsLaTa2Se7 tandem cell (33.3%) and the concentrator solar cell (35.8% in 100 suns) are higher than those of the best recorded GaAs-Si tandem cell (32.8%) and the perovskite-perovskite tandem solar cell (24.8%). These energetic results strongly demonstrate that the novel lead-free chalcogenide perovskites CsLaM2X7 are good candidates for the rear cell of tandem cells.
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Affiliation(s)
- Hong-Xia Zhong
- School of Mathematics and Physics, China University of Geosciences, Wuhan 430074, China
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Shi-Ming Liu
- State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Yu-Lang Cen
- State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Min Zhang
- Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials, College of Physics and Electronic Information, Inner Mongolia Normal University, Hohhot 010022, China
| | - Yao-Hui Zhu
- Physics Department, Beijing Technology and Business University, Beijing 100048, China
| | - Juan Du
- State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Yong He
- State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Wen-Hui Guo
- State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Xin-Qiang Wang
- State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Jun-Jie Shi
- State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
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33
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Szoszkiewicz R. Local Interactions of Atmospheric Oxygen with MoS 2 Crystals. MATERIALS (BASEL, SWITZERLAND) 2021; 14:5979. [PMID: 34683567 PMCID: PMC8540515 DOI: 10.3390/ma14205979] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/11/2021] [Revised: 09/29/2021] [Accepted: 10/07/2021] [Indexed: 11/17/2022]
Abstract
Thin and single MoS2 flakes are envisioned to contribute to the flexible nanoelectronics, particularly in sensing, optoelectronics and energy harvesting. Thus, it is important to study their stability and local surface reactivity. Their most straightforward surface reactions in this context pertain to thermally induced interactions with atmospheric oxygen. This review focuses on local and thermally induced interactions of MoS2 crystals and single MoS2 flakes. First, experimentally observed data for oxygen-mediated thermally induced morphological and chemical changes of the MoS2 crystals and single MoS2 flakes are presented. Second, state-of-the-art mechanistic insight from computer simulations and arising open questions are discussed. Finally, the properties and fate of the Mo oxides arising from thermal oxidation are reviewed, and future directions into the research of the local MoS2/MoOx interface are provided.
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Affiliation(s)
- Robert Szoszkiewicz
- Faculty of Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089 Warsaw, Poland
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34
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Patel RP, Pataniya PM, Patel M, Sumesh CK. WSe 2crystals on paper: flexible, large area and broadband photodetectors. NANOTECHNOLOGY 2021; 32:505202. [PMID: 34525463 DOI: 10.1088/1361-6528/ac26fe] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/23/2021] [Accepted: 09/15/2021] [Indexed: 06/13/2023]
Abstract
The paper-based photodetector has recently captivated a great deal of attention in various opto-electronics applications because of facile, cost effective and green synthesis. Two-dimensional transition metal dichalcogenides materials are promising for photodetection under the broad spectral range. In this work, we have fabricated paper-based device by rubbing the tungsten di-selenide (WSe2) crystals on paper substrate. Low-cost, facile and green synthesis technique was employed to make a high-performance paper-based WSe2photodetector. Paper-based photodetector was fabricated via non-toxic simply rubbing process of WSe2nanosheets on low-cost bio-degradable paper. The photodetector shows good responsivity of 72.5 μA W-1and detectivity at around 2.4 × 107Jones at very low bias (1.0 V) at wavelength of 780 nm, respectively. Due to good photo-absorption strength, photodetector exhibits excellent photo-response over wide wavelength range from visible to near infrared. This device also shows very good flexibility with a stable photo-response. This device shows a general and reliable study for the design of photodetectors that is eco-friendly and cost-effective. Overall studied results of the fabricated device indicate that they have the ability to be used in large-scale preparation of the device.
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Affiliation(s)
- Rahul P Patel
- Department of Physical Sciences, P D Patel Institute of Applied Sciences, Charotar University of Science and Technology, CHARUSAT, Changa, Gujarat, India
| | - Pratik M Pataniya
- Department of Physical Sciences, P D Patel Institute of Applied Sciences, Charotar University of Science and Technology, CHARUSAT, Changa, Gujarat, India
| | - Meswa Patel
- Department of Physical Sciences, P D Patel Institute of Applied Sciences, Charotar University of Science and Technology, CHARUSAT, Changa, Gujarat, India
| | - C K Sumesh
- Department of Physical Sciences, P D Patel Institute of Applied Sciences, Charotar University of Science and Technology, CHARUSAT, Changa, Gujarat, India
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35
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Li D, Sun S, Xiao Z, Song J, Shao DF, Tsymbal EY, Ducharme S, Hong X. Giant Transport Anisotropy in ReS_{2} Revealed via Nanoscale Conducting-Path Control. PHYSICAL REVIEW LETTERS 2021; 127:136803. [PMID: 34623838 DOI: 10.1103/physrevlett.127.136803] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/29/2020] [Revised: 05/28/2021] [Accepted: 07/19/2021] [Indexed: 06/13/2023]
Abstract
The low in-plane symmetry in layered 1T'-ReS_{2} results in strong band anisotropy, while its manifestation in the electronic properties is challenging to resolve due to the lack of effective approaches for controlling the local current path. In this work, we reveal the giant transport anisotropy in monolayer to four-layer ReS_{2} by creating directional conducting paths via nanoscale ferroelectric control. By reversing the polarization of a ferroelectric polymer top layer, we induce a conductivity switching ratio of >1.5×10^{8} in the ReS_{2} channel at 300 K. Characterizing the domain-defined conducting nanowires in an insulating background shows that the conductivity ratio between the directions along and perpendicular to the Re chain can exceed 5.5×10^{4} in monolayer ReS_{2}. Theoretical modeling points to the band origin of the transport anomaly and further reveals the emergence of a flat band in few-layer ReS_{2}. Our work paves the path for implementing highly anisotropic 2D materials for designing novel collective phenomena and electron lensing applications.
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Affiliation(s)
- Dawei Li
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
| | - Shuo Sun
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
| | - Zhiyong Xiao
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
| | - Jingfeng Song
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
| | - Ding-Fu Shao
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
| | - Evgeny Y Tsymbal
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
| | - Stephen Ducharme
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
| | - Xia Hong
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
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36
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Han X, Liang X, He D, Jiao L, Wang Y, Zhao H. Photocarrier Dynamics in MoTe 2 Nanofilms with 2 H and Distorted 1 T Lattice Structures. ACS APPLIED MATERIALS & INTERFACES 2021; 13:44703-44710. [PMID: 34494811 DOI: 10.1021/acsami.1c09698] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Molybdenum telluride (MoTe2), an emerging layered two-dimensional (2D) material, possesses excellent phase-changing properties. Previous studies revealed its reversible transition between 2H and 1T' phases with a transition energy as small as 35 meV. Since 1T'-MoTe2 is metallic, it can serve as an electrical contact for semiconducting 2H-MoTe2-based optoelectronic devices. Here, the photocarrier dynamics in MoTe2 nanofilms synthesized by a one-step method and with coexisting multiple phases are investigated by transient absorption measurements. Both the energy relaxation time and the recombination lifetime of the excitons are shorter in the 1T'-MoTe2 compared to its 2H phase. These results provide information on the different photocarrier dynamical properties of these two phases, which is important for future 2D optoelectronic and phase-change electronic devices based on MoTe2.
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Affiliation(s)
- Xiuxiu Han
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Xingyao Liang
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Dawei He
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Liying Jiao
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Yongsheng Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Hui Zhao
- Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, United States
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Schranghamer TF, Sharma M, Singh R, Das S. Review and comparison of layer transfer methods for two-dimensional materials for emerging applications. Chem Soc Rev 2021; 50:11032-11054. [PMID: 34397050 DOI: 10.1039/d1cs00706h] [Citation(s) in RCA: 40] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/31/2022]
Abstract
Two-dimensional (2D) materials offer immense potential for scientific breakthroughs and technological innovations. While early demonstrations of 2D material-based electronics, optoelectronics, flextronics, straintronics, twistronics, and biomimetic devices exploited micromechanically-exfoliated single crystal flakes, recent years have witnessed steady progress in large-area growth techniques such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and metal-organic CVD (MOCVD). However, use of high growth temperatures, chemically-active growth precursors and promoters, and the need for epitaxy often limit direct growth of 2D materials on the substrates of interest for commercial applications. This has led to the development of a large number of methods for the layer transfer of 2D materials from the growth substrate to the target application substrate with varying degrees of cleanliness, uniformity, and transfer-related damage. This review aims to catalog and discuss these layer transfer methods. In particular, the processes, advantages, and drawbacks of various transfer methods are discussed, as is their applicability to different technological platforms of interest for 2D material implementation.
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Affiliation(s)
- Thomas F Schranghamer
- Department of Engineering Science and Mechanics, Penn State University, University Park, PA 16802, USA.
| | - Madan Sharma
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Rajendra Singh
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Saptarshi Das
- Department of Engineering Science and Mechanics, Penn State University, University Park, PA 16802, USA. and Department of Materials Science and Engineering, Penn State University, University Park, PA 16802, USA and Materials Research Institute, Penn State University, University Park, PA 16802, USA
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38
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Garg M, Gupta A, Sharma AL, Singh S. Advancements in 2D Materials Based Biosensors for Oxidative Stress Biomarkers. ACS APPLIED BIO MATERIALS 2021; 4:5944-5960. [DOI: 10.1021/acsabm.1c00625] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Affiliation(s)
- Mayank Garg
- CSIR- Central Scientific Instruments Organisation, Sector 30-C, Chandigarh 160030, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Arushi Gupta
- CSIR- Central Scientific Instruments Organisation, Sector 30-C, Chandigarh 160030, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Amit L. Sharma
- CSIR- Central Scientific Instruments Organisation, Sector 30-C, Chandigarh 160030, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Suman Singh
- CSIR- Central Scientific Instruments Organisation, Sector 30-C, Chandigarh 160030, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
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39
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Xin B, Hu Y, Wu M, Cui J, Li L, Cheng Y, Liu H, Lu F, Cho K, Wang WH. Electronic structures and anisotropic carrier mobilities of monolayer ternary metal iodides MLaI 5(M=Mg, Ca, Sr, Ba). JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:355301. [PMID: 34139679 DOI: 10.1088/1361-648x/ac0c3d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/25/2021] [Accepted: 06/17/2021] [Indexed: 06/12/2023]
Abstract
Exploiting two-dimensional (2D) materials with natural band gaps and anisotropic quasi-one-dimensional (quasi-1D) carrier transport character is essential in high-performance nanoscale transistors and photodetectors. Herein, the stabilities, electronic structures and carrier mobilities of 2D monolayer ternary metal iodides MLaI5(M = Mg, Ca, Sr, Ba) have been explored by utilizing first-principles calculations combined with numerical calculations. It is found that exfoliating MLaI5monolayers are feasible owing to low cleavage energy of 0.19-0.21 J m-2and MLaI5monolayers are thermodynamically stable based on phonon spectra. MLaI5monolayers are semiconductors with band gaps ranging from 2.08 eV for MgLaI5to 2.51 eV for BaLaI5. The carrier mobility is reasonably examined considering both acoustic deformation potential scattering and polar optical phonon scattering mechanisms. All MLaI5monolayers demonstrate superior anisotropic and quasi-1D carrier transport character due to the striped structures. In particular, the anisotropic ratios of electron and hole mobilities along different directions reach hundreds and tens for MLaI5monolayers, respectively. Thus, the effective electron-hole spatial separation could be actually achieved. Moreover, the absolute locations of band edges of MLaI5monolayers have been aligned. These results would provide fundamental insights for MLaI5monolayers applying in nano-electronic and optoelectronic devices.
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Affiliation(s)
- Baojuan Xin
- Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300350, People's Republic of China
| | - Yaoqiao Hu
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, 75080, United States of America
| | - Maokun Wu
- Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300350, People's Republic of China
| | - Jintao Cui
- Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300350, People's Republic of China
| | - Luyan Li
- School of Science, Shandong Jianzhu University, Jinan 250101, People's Republic of China
| | - Yahui Cheng
- Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300350, People's Republic of China
| | - Hui Liu
- Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300350, People's Republic of China
| | - Feng Lu
- Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300350, People's Republic of China
| | - Kyeongjae Cho
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, 75080, United States of America
| | - Wei-Hua Wang
- Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300350, People's Republic of China
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40
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41
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Wu Y, Wang L, Zhang H, Ding J, Han M, Fang M, Bao J, Wu Y. Syntheses, characterizationsna and water-electrolysis properties of 2D α- and β-PdSeO3 bulk and nanosheet semiconductors. J SOLID STATE CHEM 2021. [DOI: 10.1016/j.jssc.2021.122018] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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42
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Cao J, Chen Q, Wang X, Zhang Q, Yu HD, Huang X, Huang W. Recent Development of Gas Sensing Platforms Based on 2D Atomic Crystals. RESEARCH (WASHINGTON, D.C.) 2021; 2021:9863038. [PMID: 33982003 PMCID: PMC8086560 DOI: 10.34133/2021/9863038] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/13/2020] [Accepted: 03/22/2021] [Indexed: 11/24/2022]
Abstract
Sensors, capable of detecting trace amounts of gas molecules or volatile organic compounds (VOCs), are in great demand for environmental monitoring, food safety, health diagnostics, and national defense. In the era of the Internet of Things (IoT) and big data, the requirements on gas sensors, in addition to sensitivity and selectivity, have been increasingly placed on sensor simplicity, room temperature operation, ease for integration, and flexibility. The key to meet these requirements is the development of high-performance gas sensing materials. Two-dimensional (2D) atomic crystals, emerged after graphene, have demonstrated a number of attractive properties that are beneficial to gas sensing, such as the versatile and tunable electronic/optoelectronic properties of metal chalcogenides (MCs), the rich surface chemistry and good conductivity of MXenes, and the anisotropic structural and electronic properties of black phosphorus (BP). While most gas sensors based on 2D atomic crystals have been incorporated in the setup of a chemiresistor, field-effect transistor (FET), quartz crystal microbalance (QCM), or optical fiber, their working principles that involve gas adsorption, charge transfer, surface reaction, mass loading, and/or change of the refractive index vary from material to material. Understanding the gas-solid interaction and the subsequent signal transduction pathways is essential not only for improving the performance of existing sensing materials but also for searching new and advanced ones. In this review, we aim to provide an overview of the recent development of gas sensors based on various 2D atomic crystals from both the experimental and theoretical investigations. We will particularly focus on the sensing mechanisms and working principles of the related sensors, as well as approaches to enhance their sensing performances. Finally, we summarize the whole article and provide future perspectives for the development of gas sensors with 2D materials.
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Affiliation(s)
- Jiacheng Cao
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
| | - Qian Chen
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
| | - Xiaoshan Wang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
| | - Qiang Zhang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
| | - Hai-Dong Yu
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211800, China
| | - Xiao Huang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211800, China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211800, China
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Wang F, Pei K, Li Y, Li H, Zhai T. 2D Homojunctions for Electronics and Optoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005303. [PMID: 33644885 DOI: 10.1002/adma.202005303] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2020] [Revised: 09/19/2020] [Indexed: 05/21/2023]
Abstract
In the post-Moore era, 2D materials with rich physical properties have attracted widespread attention from the scientific and industrial communities. Among 2D materials, the 2D homojunctions are of great promise in designing novel electronic and optoelectronic devices due to their unique geometries and properties such as homogeneous components, perfect lattice matching, and efficient charge transfer at the interface. In this article, a pioneering review focusing on the structural design and device application of 2D homojunctions such as p-n homojunctions, heterophase homojunctions, and layer-engineered homojunctions is provided. The preparation strategies to construct 2D homojunctions including vapor-phase deposition, lithium intercalation, laser irradiation, chemical doping, electrostatic doping, and photodoping are summarized in detail. Specifically, a careful review on the applications of the 2D homojunctions in electronics (e.g., field-effect transistors, rectifiers, and inverters) and optoelectronics (e.g., light-emitting diodes, photovoltaics, and photodetectors) is provided. Eventually, the current challenges and future perspectives are commented for promoting the rapid development of 2D homojunctions.
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Affiliation(s)
- Fakun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Ke Pei
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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Funke S, Duwe M, Balzer F, Thiesen PH, Hingerl K, Schiek M. Determining the Dielectric Tensor of Microtextured Organic Thin Films by Imaging Mueller Matrix Ellipsometry. J Phys Chem Lett 2021; 12:3053-3058. [PMID: 33739845 PMCID: PMC8041376 DOI: 10.1021/acs.jpclett.1c00317] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/28/2021] [Accepted: 03/16/2021] [Indexed: 06/12/2023]
Abstract
Polycrystalline textured thin films with distinct pleochroism and birefringence comprising oriented rotational domains of the orthorhombic polymorph of an anilino squaraine with isobutyl side chains (SQIB) are analyzed by imaging Mueller matrix ellipsometry to obtain the biaxial dielectric tensor. Simultaneous fitting of transmission and oblique incidence reflection Mueller matrix scans combined with the spatial resolution of an optical microscope allows to accurately determine the full biaxial dielectric tensor from a single crystallographic sample orientation. Oscillator dispersion relations model well the dielectric tensor components. Strong intermolecular interactions cause the real permittivity for all three directions to become strongly negative near the excitonic resonances, which is appealing for nanophotonic applications.
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Affiliation(s)
- Sebastian Funke
- Accurion
GmbH, Stresemannstr. 30, D-37079 Göttingen, Germany
| | - Matthias Duwe
- Accurion
GmbH, Stresemannstr. 30, D-37079 Göttingen, Germany
| | - Frank Balzer
- Centre
for Photonics Engineering, University of
Southern Denmark, Alsion 2, DK-6400 Sønderborg, Denmark
| | | | - Kurt Hingerl
- Center
for Surface- and Nanoanalytics, Johannes
Kepler University, Altenbergerstr. 69, A-4040 Linz, Austria
| | - Manuela Schiek
- Institute
of Physics, University of Oldenburg, Carl-von-Ossietzky-Str. 9-11, D-26129 Oldenburg, Germany
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45
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Dou W, Jia Y, Hao X, Meng Q, Wu J, Zhai S, Li T, Hu W, Song B, Zhou M. Time-Domain Ab Initio Insights into the Reduced Nonradiative Electron-Hole Recombination in ReSe 2/MoS 2 van der Waals Heterostructure. J Phys Chem Lett 2021; 12:2682-2690. [PMID: 33689347 DOI: 10.1021/acs.jpclett.1c00455] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) ReSe2 has attracted considerable interest due to its unique anisotropic mechanical, optical, and exitonic characteristics. Recent transient absorption experiments demonstrated a prolonged lifetime of photoexcited charge carriers by stacking ReSe2 with MoS2, but the underlying mechanism remains elusive. Here, by combining time-domain density functional theory with nonadiabatic molecular dynamics, we investigate the electronic properties and charge carrier dynamics of 2D ReSe2/MoS2 van der Waals (vdW) heterostructure. ReSe2/MoS2 has a type II band alignment that exhibits spatially distinguished conduction and valence band edges, and a built-in electric field is formed due to interface charge transfer. Remarkably, in spite of the decreased band gap and increased decoherence time, we demonstrate that the photocarrier lifetime of ReSe2/MoS2 is ∼5 times longer than that of ReSe2, which originates from the greatly reduced nonadiabatic coupling that suppresses electron-hole recombination, perfectly explaining the experimental results. These findings not only provide physical insights into experiments but also shed light on future design and fabrication of functional optoelectronic devices based on 2D vdW heterostructures.
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Affiliation(s)
- Wenzhen Dou
- School of Physics, Beihang University, Beijing 100191, China
| | - Yizhen Jia
- School of Physics, Beihang University, Beijing 100191, China
| | - Xiamin Hao
- School of Physics, Beihang University, Beijing 100191, China
| | - Qingling Meng
- School of Physics, Beihang University, Beijing 100191, China
| | - Jinge Wu
- School of Physics, Beihang University, Beijing 100191, China
| | - Shuwei Zhai
- School of Physics, Beihang University, Beijing 100191, China
| | - Tianzhao Li
- School of Physics, Beihang University, Beijing 100191, China
| | - Weijuan Hu
- School of Physics, Beihang University, Beijing 100191, China
| | - Biyu Song
- School of Physics, Beihang University, Beijing 100191, China
| | - Miao Zhou
- School of Physics, Beihang University, Beijing 100191, China
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Tong L, Peng M, Wu P, Huang X, Li Z, Peng Z, Lin R, Sun Q, Shen Y, Zhu X, Wang P, Xu J, Ye L. Hole-dominated Fowler-Nordheim tunneling in 2D heterojunctions for infrared imaging. Sci Bull (Beijing) 2021; 66:139-146. [PMID: 36654221 DOI: 10.1016/j.scib.2020.07.037] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/29/2020] [Revised: 06/09/2020] [Accepted: 07/01/2020] [Indexed: 01/20/2023]
Abstract
Heterostructures based on diverse two-dimensional (2D) materials are effective for tailoring and further promoting device performance and exhibit considerable potential in photodetection. However, the problem of high-density thermionic carriers can be hardly overcome in most reported heterostructure devices based on type I and type II band alignment, which leads to an unacceptably small Iphoto/Idark and strong temperature dependence that limit the performance of photodetectors. Here, using the MoTe2/h-BN/MoTe2/h-BN heterostructure, we report the hole-dominated Fowler-Nordheim quantum tunneling transport in both on and off states. The state-of-the-art device operating at room temperature shows high detectivity of >108 Jones at a laser power density of <0.3 nW μm-2 from the visible to near infrared range. In addition, the fast on-off switching and highly sensitive photodetection properties promise superior imaging capabilities. The tunneling mechanism, in combination with other unique properties of 2D materials, is significant for novel photodetection.
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Affiliation(s)
- Lei Tong
- School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Meng Peng
- School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Peisong Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Xinyu Huang
- School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Zheng Li
- School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Zhuiri Peng
- School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Runfeng Lin
- School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Qiaodong Sun
- School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Yaxi Shen
- School of Physics and Innovation Institute, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xuefeng Zhu
- School of Physics and Innovation Institute, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Peng Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
| | - Jianbin Xu
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China; Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, China
| | - Lei Ye
- School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
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47
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Alencar AB, de Oliveira AB, Chacham H. Crystal reorientation and plastic deformation of single-layer MoS 2 and MoSe 2 under uniaxial stress. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:125401. [PMID: 33438584 DOI: 10.1088/1361-648x/abd5f5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We investigate theoretically, through of first-principles calculations, the effect of the application of large in-plane uniaxial stress on single-layer of MoS2, MoSe2, and MoSSe alloys. For stress applied along the zigzag (zz) direction, we predict an anomalous behavior near the point fracture. This behavior is characterized by the reorientation of the MoS2 structure along the applied stress from zz to armchair due to the formation of transient square-lattice regions in the crystal, with an apparent crystal rotation of 30 degrees. After reorientation, a large plastic deformation [Formula: see text] remains after the stress is removed. This behavior is also observed in MoSe2 and in MoSSe alloys. This phenomenon is observed both in stress-constrained geometry optimizations and in ab initio molecular dynamics simulations at finite temperature and applied stress.
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Affiliation(s)
- Ananias B Alencar
- Instituto de Engenharia, Ciência e Tecnologia, Universidade Federal dos Vales do Jequitinhonha e Mucuri, Janaúba, Minas Gerais, 39440-146, Brazil
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48
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Yang Y, Liu SC, Li Z, Xue DJ, Hu JS. In-plane anisotropic 2D Ge-based binary materials for optoelectronic applications. Chem Commun (Camb) 2021; 57:565-575. [DOI: 10.1039/d0cc04476h] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022]
Abstract
In-plane anisotropic two-dimensional (2D) materials possess unique in-plane anisotropic physical properties arising from their low crystal lattice symmetry.
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Affiliation(s)
- Yusi Yang
- Beijing National Laboratory for Molecular Sciences (BNLMS)
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Shun-Chang Liu
- Beijing National Laboratory for Molecular Sciences (BNLMS)
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Zongbao Li
- School of Material and Chemical Engineering
- Tongren University
- Tongren 554300
- China
- National Engineering Research Center for Advanced Polymer Processing Technology
| | - Ding-Jiang Xue
- Beijing National Laboratory for Molecular Sciences (BNLMS)
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Jin-Song Hu
- Beijing National Laboratory for Molecular Sciences (BNLMS)
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
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49
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Su J, Shen W, Chen J, Yang S, Liu J, Feng X, Zhao Y, Hu C, Li H, Zhai T. 2D ternary vanadium phosphorous chalcogenide with strong in-plane optical anisotropy. Inorg Chem Front 2021. [DOI: 10.1039/d1qi00390a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
2D ternary vanadium phosphorous chalcogenide V2P4S13, with novel porous structure, ultra-low crystallographic symmetry, and highly optical anisotropy, was introduced as a new member of 2D anisotropic materials.
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50
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Kim EK, Yoon SJ, Bui HT, Patil SA, Bathula C, Shrestha NK, Im H, Han SH. Epitaxial electrodeposition of single crystal MoTe2 nanorods and Li+ storage feasibility. J Electroanal Chem (Lausanne) 2020. [DOI: 10.1016/j.jelechem.2020.114672] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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