High-Throughput Fabrication of Flexible and Transparent All-Carbon Nanotube Electronics

High-sensitivity and energy-efficient chloride ion sensors based on flexible printed carbon nanotube thin-film transistors for wearable electronics

The advent of flexible single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) has transformed electronics, providing significant benefits like low operating voltage, reduced power consumption, cost-effectiveness, and improved signal amplification. This study focuses on leveraging these attributes to develop a novel flexible high-sensitivity and energy-efficient chloride ion sensors based on printed flexible SWCNT-TFTs utilizing polymers-sorted semiconducting SWCNTs (sc-SWCNTs) as the active layers and ion liquids-poly(4-vinylphenol as dielectric layers along with the evaporated deposition of aluminum electrodes and printed silver electrodes as the gate and source-drain electrodes, respectively. The sensors exhibit several operational advantages, including low voltage requirements (≤1 V), rapid response speed (5.32 s), significant signal amplification (Up to 702.6 %), low power consumption (0.31 μJ at 1 mmol chloride ion), good repeatability, high sensitivity for both low and high concentrations of chloride ion (up to 100 mmol/L) and excellent mechanical flexibility (No obvious changes after bending for 10,000 times with a 5 mm radius). The detection mechanism of chloride ions was analyzed using X-ray Photoelectron Spectroscopy (XPS). It was found that chloride ions react with silver nanoparticles (AgNPs) to form silver chloride (AgCl) on printed electrodes, impeding carrier transport and reducing the currents in SWCNT TFTs. Importantly, our sensors' compatibility with smart devices allows for real-time monitoring of chloride ion levels in human sweat, offering significant potential for daily health monitoring.

Recent Advances in Positive Photoresists: Mechanisms and Fabrication

Photoresists are fundamental materials in photolithography and are crucial for precise patterning in microelectronic devices, MEMS, and nanostructures. This paper provides an in-depth review of recent advancements in positive photoresist research and development, focusing on discussion regarding the underlying mechanisms governing their behavior, exploring innovative fabrication techniques, and highlighting the advantages of the photoresist classes discussed. The paper begins by discussing the need for the development of new photoresist technologies, highlighting issues associated with adopting extreme ultraviolet photolithography and addressing these challenges through the development of advanced positive-tone resist materials with improved patterning features, resolution, and sensitivity. Subsequently, it discusses the working mechanisms and synthesis methods of different types and subtypes of photoresists, starting from non-chemically amplified, organic, and inorganic-organic hybrid photoresists and progressing to dry film resists, with an emphasis on the upsides of each. The paper concludes by discussing how future research in the field of lithography-prioritizing concerns related to environmental impacts, improved photoresist material and properties, and utilization of advanced quantum technology-can assist with revolutionizing lithography techniques.

Photoresponse Analysis of All-Inkjet-Printed Single-Walled Carbon Nanotube Thin-Film Transistors for Flexible Light-Insensitive Transparent Circuit Applications

We report daylight-stable, transparent, and flexible single-walled carbon nanotube thin-film transistors (SWCNT TFTs) using an all-inkjet printing process. Although most of the previous reports classified SWCNT TFTs as photodetectors, we demonstrated that SWCNT films actually show two different types of photoresponses depending on the power levels of light sources. The electrical characteristics of SWCNT TFTs show no significant change under daily illumination conditions such as halogen lamps and sunlight, while under high-power laser illumination, they change as reported in the previous results. In addition, the low-temperature solution process of the SWCNT with its one-dimensional nature allows us to realize highly transparent and flexible TFTs and logic circuits on plastic substrates. Our result will provide new insights into utilizing SWCNT TFTs for light-insensitive transparent and flexible electronic applications.

Carbon Nanotube-Based Field-Effect Transistor-Type Sensor with a Sensing Gate for Ppb-Level Formaldehyde Detection

The detection of harmful trace gases, such as formaldehyde (HCHO), is a technical challenge in the current gas sensor field. The weak electrical signal caused by trace amounts of gases is difficult to be detected and susceptible to other gases. Based on the amplification effect of a field-effect transistor (FET), a carbon-based FET-type gas sensor with a gas-sensing gate is proposed for HCHO detection at the ppb level. Semiconducting carbon nanotubes (s-CNTs) and a catalytic metal are chosen as channel and gate materials, respectively, for the FET-type gas sensor, which makes full use of the respective advantages of the channel transport layer and the sensitive gate layer. The as-prepared carbon-based FET-type gas sensor exhibits a low detection limit toward HCHO up to 20 ppb under room temperature (RT), which can be improved to 10 ppb by a further heating strategy. It also exhibits a remarkable elevated recovery rate from 80 to 97% with almost no baseline drift (2%) compared to the RT condition, revealing excellent reproducibility, stability, and recovery. The role of sensitive function in the FET-type gas sensor is performed by means of an independent gas-sensing gate, that is, the independence of the sensitive gate and the electron transmission channel is the main reason for its high sensitivity detection. We hope our work can provide an instructive approach for designing high-performance formaldehyde sensor chips with on-chip integration potential.

Inkjet-Printing-Based Density Profile Engineering of Single-Walled Carbon Nanotube Networks for Conformable High-On/Off-Performance Thin-Film Transistors

Random networks of single-walled carbon nanotubes (SWCNTs) offer new-form-factor electronics such as transparent, flexible, and intrinsically stretchable devices. However, the long-standing trade-off between carrier mobility and on/off ratio due to the coexistence of metallic and semiconducting nanotubes has limited the performance of SWCNT-random-network-based thin-film transistors (SWCNT TFTs), hindering their practical circuit-level applications. Methods for high-purity separation between metallic and semiconducting nanotubes have been proposed, but they require high cost and energy and are vulnerable to contamination and nanotube shortening, leading to performance degradation. Alternatively, additional structures have been proposed to reduce the off-state current, but they still compromise carrier mobility and suffer from inevitable expansion in device dimensions. Here, we propose a density-modulated SWCNT network using an inkjet-printing method as a facile approach that can achieve superior carrier mobility and a high on/off ratio simultaneously. By exploiting picoliter-scale drops on demand, we form a low-density channel network near the source and drain junctions and a high-density network at the middle of the channel. The modulated density profile forms a large band gap near the source and drain junctions that efficiently blocks electron injection under the reverse bias and a narrow band gap at the high-density area that facilitates the hole transport under the on-state bias. As a result, the density-modulated SWCNT TFTs show both high carrier mobility (27.02 cm² V^-1 s^-1) and a high on/off ratio (>10⁶). We also demonstrate all-inkjet-printed flexible inverter circuits whose gain is doubled by the density-modulated SWCNT TFTs, highlighting the feasibility of our approach for realizing high-performance flexible and conformable electronics.

Chirality-Enriched Carbon Nanotubes for Next-Generation Computing

For the past half century, silicon has served as the primary material platform for integrated circuit technology. However, the recent proliferation of nontraditional electronics, such as wearables, embedded systems, and low-power portable devices, has led to increasingly complex mechanical and electrical performance requirements. Among emerging electronic materials, single-walled carbon nanotubes (SWCNTs) are promising candidates for next-generation computing as a result of their superlative electrical, optical, and mechanical properties. Moreover, their chirality-dependent properties enable a wide range of emerging electronic applications including sub-10 nm complementary field-effect transistors, optoelectronic integrated circuits, and enantiomer-recognition sensors. Here, recent progress in SWCNT-based computing devices is reviewed, with an emphasis on the relationship between chirality enrichment and electronic functionality. In particular, after highlighting chirality-dependent SWCNT properties and chirality enrichment methods, the range of computing applications that have been demonstrated using chirality-enriched SWCNTs are summarized. By identifying remaining challenges and opportunities, this work provides a roadmap for next-generation SWCNT-based computing.

The Evolution of Flexible Electronics: From Nature, Beyond Nature, and To Nature

The flourishing development of multifunctional flexible electronics cannot leave the beneficial role of nature, which provides continuous inspiration in their material, structural, and functional designs. During the evolution of flexible electronics, some originated from nature, some were even beyond nature, and others were implantable or biodegradable eventually to nature. Therefore, the relationship between flexible electronics and nature is undoubtedly vital since harmony between nature and technology evolution would promote the sustainable development. Herein, materials selection and functionality design for flexible electronics that are mostly inspired from nature are first introduced with certain functionality even beyond nature. Then, frontier advances on flexible electronics including the main individual components (i.e., energy (the power source) and the sensor (the electric load)) are presented from nature, beyond nature, and to nature with the aim of enlightening the harmonious relationship between the modern electronics technology and nature. Finally, critical issues in next-generation flexible electronics are discussed to provide possible solutions and new insights in prospective exploration directions.

Morphology-controlled silver nanowire synthesis using a cocamidopropyl betaine-based polyol process for flexible and stretchable electronics

Silver nanowire (AgNW) based transparent conductive films (TCFs) are promising building blocks for flexible and stretchable electronics to replace brittle metal oxides. Ultra-long AgNWs are preferred for enabling TCFs with excellent photoelectric properties and mechanical flexibility. Herein, a novel polyol process is proposed for the synthesis of ultra-long AgNWs, with the new finding that the addition cocamidopropyl betaine (CAB) to polyol synthesis allows the rapid production of AgNWs with an average length of ∼120 μm in a high yield of ∼90%. Also, a cocamidopropyl betaine assisted polyol method for the synthesis of ultra-long AgNWs is demonstrated with a possible mechanistic explanation. The prepared AgNWs are coated on a polyethylene glycol terephthalate (PET) substrate to fabricate a flexible transparent conductive film, which exhibits a low sheet resistance of ∼200 Ω sq⁻¹ at 88.74% transmittance with a negligible change of sheet resistance after bending. In addition, flexible TCFs based on the resulting AgNWs reveal excellent mechanical flexibility and high cyclic stability after 300 cycles of bending. The new polyol process in this work will provide a greater possibility for the practical application of long AgNWs towards flexible and wearable optoelectronic devices.

Ultra-long silver nanowires with a length of ∼120 μm were synthesised using a cocamidopropyl betaine-based polyol process.

Giant Poisson's Effect for Wrinkle-Free Stretchable Transparent Electrodes

The next generation of flexible electronics will require highly stretchable and transparent electrodes, many of which consist of a relatively stiff metal network (or carbon materials) and an underlying soft substrate. Typically, such a stiff-soft bilayer suffers from wrinkling or folding when subjected to strains, causing high surface roughness and seriously deteriorated optical transparency. In this work, a network with a giant effective Poisson's ratio on a soft substrate is found to be under biaxial tension upon deformation, and thus does not wrinkle or fold, but maintains smooth surfaces and high transparency. Soft tactile sensors employing such network electrodes exhibit high transparency and low fatigue over many stretching cycles. Such a giant Poisson's ratio has the same effect in other systems. This work offers a new understanding of surface instabilities and a general strategy to prevent them not only in flexible electronics, but also in other materials and mechanical structures that require flat surfaces.

Buckled Structures: Fabrication and Applications in Wearable Electronics

Wearable electronics have attracted a tremendous amount of attention due to their many potential applications, such as personalized health monitoring, motion detection, and smart clothing, where electronic devices must conformably form contacts with curvilinear surfaces and undergo large deformations. Structural design and material selection have been the key factors for the development of wearable electronics in the recent decades. As one of the most widely used geometries, buckling structures endow high stretchability, high mechanical durability, and comfortable contact for human-machine interaction via wearable devices. In addition, buckling structures that are derived from natural biosurfaces have high potential for use in cost-effective and high-grade wearable electronics. This review provides fundamental insights into buckling fabrication and discusses recent advancements for practical applications of buckled electronics, such as interconnects, sensors, transistors, energy storage, and conversion devices. In addition to the incorporation of desired functions, the simple and consecutive manipulation and advanced structural design of the buckled structures are discussed, which are important for advancing the field of wearable electronics. The remaining challenges and future perspectives for buckled electronics are briefly discussed in the final section.

Recent Progress in Inkjet-Printed Thin-Film Transistors

Drop-on-demand inkjet printing is one of the most attractive techniques from a manufacturing perspective due to the possibility of fabrication from a digital layout at ambient conditions, thus leading to great opportunities for the realization of low-cost and flexible thin-film devices. Over the past decades, a variety of inkjet-printed applications including thin-film transistors (TFTs), radio-frequency identification devices, sensors, and displays have been explored. In particular, many research groups have made great efforts to realize high-performance TFTs, for application as potential driving components of ubiquitous wearable electronics. Although there are still challenges to enable the commercialization of printed TFTs beyond laboratory-scale applications, the field of printed TFTs still attracts significant attention, with remarkable developments in soluble materials and printing methodology. Here, recent progress in printing-based TFTs is presented from materials to applications. Significant efforts to improve the electrical performance and device-yield of printed TFTs to match those of counterparts fabricated using conventional deposition or photolithography methods are highlighted. Moreover, emerging low-dimension printable semiconductors, including carbon nanotubes and transition metal dichalcogenides as well as mature semiconductors, and new-concept printed switching devices, are also discussed.

Solution-Processing of High-Purity Semiconducting Single-Walled Carbon Nanotubes for Electronics Devices

High-purity semiconducting single-walled carbon nanotubes (s-SWCNTs) are of paramount significance for the construction of next-generation electronics. Until now, a number of elaborate sorting and purification techniques for s-SWCNTs have been developed, among which solution-based sorting methods show unique merits in the scale production, high purity, and large-area film formation. Here, the recent progress in the solution processing of s-SWCNTs and their application in electronic devices is systematically reviewed. First, the solution-based sorting and purification of s-SWCNTs are described, and particular attention is paid to the recent advance in the conjugated polymer-based sorting strategy. Subsequently, the solution-based deposition and morphology control of a s-SWCNT thin film on a surface are introduced, which focus on the strategies for network formation and alignment of SWCNTs. Then, the recent advances in electronic devices based on s-SWCNTs are reviewed with emphasis on nanoscale s-SWCNTs' high-performance integrated circuits and s-SWCNT-based thin-film transistors (TFT) array and circuits. Lastly, the existing challenges and development trends for the s-SWCNTs and electronic devices are briefly discussed. The aim is to provide some useful information and inspiration for the sorting and purification of s-SWCNTs, as well as the construction of electronic devices with s-SWCNTs.

Continuous Fabrication of Meter-Scale Single-Wall Carbon Nanotube Films and their Use in Flexible and Transparent Integrated Circuits

Single-wall carbon nanotubes (SWCNTs), especially in the form of large-area and high-quality thin films, are a promising material for use in flexible and transparent electronics. Here, a continuous synthesis, deposition, and transfer technique is reported for the fabrication of meter-scale SWCNT thin films, which have an excellent optoelectrical performance including a low sheet resistance of 65 Ω/◽ with a transmittance of 90% at a wavelength of 550 nm. Using these SWCNT thin films, high-performance all-CNT thin-film transistors and integrated circuits are demonstrated, including 101-stage ring oscillators. The results pave the way for the future development of large-scale, flexible, and transparent electronics based on CNT thin films.