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Shuai X, Sidhik S, Xu M, Zhang X, De Siena M, Pedesseau L, Zhang H, Gao G, Puthirath AB, Li W, Agrawal A, Xu J, Hou J, Persaud JH, Daum J, Mishra A, Wang Y, Vajtai R, Katan C, Kanatzidis MG, Even J, Ajayan PM, Mohite AD. Vapor Growth of All-Inorganic 2D Ruddlesden-Popper Lead- and Tin-Based Perovskites. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39175462 DOI: 10.1021/acsami.4c05329] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/24/2024]
Abstract
The 2D Ruddlesden-Popper (RP) perovskites Cs2PbI2Cl2 (Pb-based, n = 1) and Cs2SnI2Cl2 (Sn-based, n = 1) stand out as unique and rare instances of entirely inorganic constituents within the more expansive category of organic/inorganic 2D perovskites. These materials have recently garnered significant attention for their strong UV-light responsiveness, exceptional thermal stability, and theoretically predicted ultrahigh carrier mobility. In this study, we synthesized Pb and Sn-based n = 1 2D RP perovskite films covering millimeter-scale areas for the first time, utilizing a one-step chemical vapor deposition (CVD) method under atmospheric conditions. These films feature perovskite layers oriented horizontally relative to the substrate. Multilayered Cs3Pb2I3Cl4 (Pb-based, n = 2) and Cs3Sn2I3Cl4 (Sn-based, n = 2) films were also obtained for the first time, and their crystallographic structures were refined by combining X-ray diffraction (XRD) and density functional theory (DFT) calculations. DFT calculations and experimental optical spectroscopy support band-gap energy shifts related to the perovskite layer thickness. We demonstrate bias-free photodetectors using the Sn-based, n = 1 perovskite with reproducible photocurrent and a fast 84 ms response time. The present work not only demonstrates the growth of high-quality all-inorganic multilayered 2D perovskites via the CVD method but also suggests their potential as promising candidates for future optoelectronic applications.
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Affiliation(s)
- Xinting Shuai
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Siraj Sidhik
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Mingrui Xu
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Xiang Zhang
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Michael De Siena
- Department of Chemistry and Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Laurent Pedesseau
- Univ Rennes, INSA Rennes, CNRS, Institut FOTON - UMR6082, Rennes F-35000, France
| | - Hao Zhang
- Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, United States
- Applied Physics Graduate Program, Smalley-Curl Institution, Houston, Texas 77005, United States
| | - Guanhui Gao
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Anand B Puthirath
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Wenbin Li
- Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, United States
- Applied Physics Graduate Program, Smalley-Curl Institution, Houston, Texas 77005, United States
| | - Ayush Agrawal
- Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, United States
| | - Jianan Xu
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Jin Hou
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Jessica H Persaud
- Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, United States
| | - Jeremy Daum
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Anamika Mishra
- Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, United States
| | - Yafei Wang
- School of Mechanical and Electric Engineering, Guangzhou University, Guangzhou, Guangdong 510006, China
| | - Robert Vajtai
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Claudine Katan
- Univ Rennes, ENSCR, INSA Rennes, CNRS, ISCR -UMR6226, Rennes F-35000, France
| | - Mercouri G Kanatzidis
- Department of Chemistry and Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Jacky Even
- Univ Rennes, INSA Rennes, CNRS, Institut FOTON - UMR6082, Rennes F-35000, France
| | - Pulickel M Ajayan
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Aditya D Mohite
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
- Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, United States
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Wang S, Zhang Y, Halasyamani PS, Mitzi DB. Chirality and Solvent Coassist the Structural Evolution of Hybrid Manganese Chlorides with Second-Harmonic-Generation Response. Inorg Chem 2024. [PMID: 39155446 DOI: 10.1021/acs.inorgchem.4c02588] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/20/2024]
Abstract
Chiral hybrid metal halides have shown great potential in optoelectronics, including for spin splitting, circularly polarized luminescence, and nonlinear-optical properties. However, despite their inherent inversion symmetry breaking, studies on second harmonic generation (SHG) of chiral hybrid manganese(II) halides remain relatively rare. Here, we report a series of structurally diverse hybrid manganese(II) chlorides: (Rac-MBA)2[MnCl4(H2O)2] (1), (S-MBA)2[MnCl4(H2O)2] (2), (S-MBA)2[Mn2Cl6(H2O)4] (3), and (S-MBA)[MnCl3(MeOH)] (4), where MBA = α-methylbenzylammonium, providing tunability of the coordination environment and structural dimensionality via fine control of the MBA cation chiral state and crystal preparation process, thereby enabling modulation of the SHG effects. Specifically, as the amount of methanol increases during the crystal preparation process, the structures of the chiral compounds vary from a 0D structure consisting of isolated octahedra to a 0D structure composed of octahedra dimers and to 1D chains of edge-sharing Mn-centered octahedra. In contrast, the structure of the racemic compound remains unchanged, independent of the crystal preparation pathway. The structural details, including the coordination environment, H-bonding, dimensionality, and lattice distortion, are described. The SHG response of the racemic compound derives only from the inorganic lattice, while the responses of the chiral compounds are attributed to the synergetic effect of the chiral cations and inorganic moieties.
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Affiliation(s)
- Sasa Wang
- Department of Mechanical Engineering and Materials Science and Department of Chemistry, Duke University, Durham, North Carolina 27708, United States
| | - Yujie Zhang
- Department of Chemistry, University of Houston, Houston, Texas 77204, United States
| | - P Shiv Halasyamani
- Department of Chemistry, University of Houston, Houston, Texas 77204, United States
| | - David B Mitzi
- Department of Mechanical Engineering and Materials Science and Department of Chemistry, Duke University, Durham, North Carolina 27708, United States
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Liu J, Chen Z, Wu C, Yu X, Yu X, Chen C, Li Z, Qiao Q, Cao Y, Zhou Y. Recent Advances in Antimony Selenide Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2406028. [PMID: 39139003 DOI: 10.1002/adma.202406028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2024] [Revised: 07/27/2024] [Indexed: 08/15/2024]
Abstract
Photodetectors (PDs) rapidly capture optical signals and convert them into electrical signals, making them indispensable in a variety of applications including imaging, optical communication, remote sensing, and biological detection. Recently, antimony selenide (Sb2Se3) has achieved remarkable progress due to its earth-abundant, low toxicity, low price, suitable bandgap width, high absorption coefficient, and unique structural characteristics. Sb2Se3 has been extensively studied in solar cells, but there's a lack of timely updates in the field of PDs. A literature review based on Sb2Se3 PDs is urgently warranted. This review aims to provide a concise understanding of the latest progress in Sb2Se3 PDs, with a focus on the basic characteristics and the performance optimization for Sb2Se3 photoconductive-type and photodiode-type detectors, including nanostructure regulation, process optimization, and stability improvement of flexible devices. Furthermore, the application progresses of Sb2Se3 PDs in heart rate monitoring, and monolithic-integrated matrix images are introduced. Finally, this review presents various strategies with potential and feasibility to address challenges for the rapid development and commercial application of Sb2Se3 PDs.
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Affiliation(s)
- Jiaojiao Liu
- School of Marine Engineering Equipment, Zhejiang Ocean University, Zhoushan, Zhejiang, 316022, China
| | - Zhenbo Chen
- School of Marine Engineering Equipment, Zhejiang Ocean University, Zhoushan, Zhejiang, 316022, China
| | - Cheng Wu
- School of Marine Engineering Equipment, Zhejiang Ocean University, Zhoushan, Zhejiang, 316022, China
| | - Xiaoming Yu
- School of Marine Engineering Equipment, Zhejiang Ocean University, Zhoushan, Zhejiang, 316022, China
- National Engineering Research Center for Marine Aquaculture, Zhejiang Ocean University, Zhoushan, Zhejiang, 316022, China
| | - Xuan Yu
- School of Marine Engineering Equipment, Zhejiang Ocean University, Zhoushan, Zhejiang, 316022, China
- National Engineering Research Center for Marine Aquaculture, Zhejiang Ocean University, Zhoushan, Zhejiang, 316022, China
| | - Chao Chen
- School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology Wuhan, Wuhan, Hubei, 430074, China
| | - Zhenhua Li
- School of Marine Engineering Equipment, Zhejiang Ocean University, Zhoushan, Zhejiang, 316022, China
| | - Qian Qiao
- School of Marine Engineering Equipment, Zhejiang Ocean University, Zhoushan, Zhejiang, 316022, China
| | - Yu Cao
- School of Electrical Engineering, Northeast Electric Power University, Jilin, 132012, China
| | - Yingtang Zhou
- National Engineering Research Center for Marine Aquaculture, Zhejiang Ocean University, Zhoushan, Zhejiang, 316022, China
- Zhejiang Key Laboratory of Petrochemical Environmental Pollution Control, Marine Science and Technology College, Zhejiang Ocean University, Zhoushan, Zhejiang, 316004, China
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Qu J, Cheng H, Lan H, Zheng B, Luo Z, Yang X, Yi X, Wu G, Chen S, Pan A. Space-Confined Growth of Ultrathin P-Type GeTe Nanosheets for Broadband Photodetectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309391. [PMID: 38456381 DOI: 10.1002/smll.202309391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Revised: 02/18/2024] [Indexed: 03/09/2024]
Abstract
As p-type phase-change degenerate semiconductors, crystalline and amorphous germanium telluride (GeTe) exhibit metallic and semiconducting properties, respectively. However, the massive structural defects and strong interface scattering in amorphous GeTe films significantly reduce their performance. In this work, two-dimensional (2D) p-type GeTe nanosheets are synthesized via a specially designed space-confined chemical vapor deposition (CVD) method, with the thickness of the GeTe nanosheets reduced to 1.9 nm. The space-confined CVD method improves the crystallinity of ultrathin GeTe by lowering the partial pressure of the reactant gas, resulting in GeTe nanosheets with excellent p-type semiconductor properties, such as a satisfactory on/off ratio of 105. Temperature-dependent electrical measurements demonstrate that variable-range hopping and optical-phonon-assisted hopping mechanisms dominate transport behavior at low and high temperatures, respectively. GeTe devices exhibit significantly high responsivity (6589 and 2.2 A W-1 at 633 and 980 nm, respectively) and detectivity (1.67 × 1011 and 1.3 × 108 Jones at 633 and 980 nm, respectively), making them feasible for broadband photodetectors in the visible to near-infrared range. Furthermore, the fabricated GeTe/WS2 diode exhibits a rectification ratio of 103 at zero gate voltage. These satisfactory p-type semiconductor properties demonstrate that ultrathin GeTe exhibits enormous potential for applications in optoelectronic interconnection circuits.
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Affiliation(s)
- Junyu Qu
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Haodong Cheng
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Huiping Lan
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Biyuan Zheng
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Ziyu Luo
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Xin Yang
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Xiao Yi
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Guangcheng Wu
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Shula Chen
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Anlian Pan
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
- School of Physics and Electronics, Hunan Normal University, Changsha, Hunan, 410081, P. R. China
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Wei C, Wang J, Wang L, Zhao J, Yin Z, Tang A. Highly Efficient Flexible Photodetectors Based on Pb-Free CsBi 3I 10 Perovskites. ACS APPLIED MATERIALS & INTERFACES 2024; 16:28845-28852. [PMID: 38776522 DOI: 10.1021/acsami.4c03662] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2024]
Abstract
Perovskites have made remarkable advancements in optoelectronics owing to their high light absorption coefficient, tunable bandgap, and long charge diffusion. Nonetheless, the practical applications of Pb-based perovskites have been hindered by the instability and toxicity of Pb, especially in flexible electronics, which require high biosecurity and low toxicity. Hence, the development of stable Pb-free perovskite materials has gained increasing attention. In this study, we synthesized stable CsBi3I10 Pb-free perovskites outside the glovebox and improved the optoelectronic and mechanical performances of the CsBi3I10-based flexible devices through polyvinylcarbazole (PVK) doping. Flexible photodetectors with the device structure of PET/ITO/PEDOT:PSS/CsBi3I10:PVK/Au was fabricated. The results indicated that the introduction of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) reduced the surface roughness of the flexible PET substrate, while PVK doping further improved the surface smoothness of CsBi3I10 thin films, thereby enhancing the interfacial charge transportation. Moreover, PEDOT:PSS and PVK acted as stepwise hole transport layers in the photodetectors. The device demonstrated a maximum responsivity of 0.3 A/W, detectivity of 2.6 × 1011 Jones, and a response time of 102 μs at 650 nm. After subjecting it to 1000 bending tests, the light current retained 80% of its initial value. This study presents a universally applicable method for controlling the surface morphology of a flexible perovskite thin film.
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Affiliation(s)
- Chuangchuang Wei
- Department of Material Science and Engineering, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Jihui Wang
- Department of Material Science and Engineering, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Lijin Wang
- Department of Material Science and Engineering, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Jinxing Zhao
- Department of Material Science and Engineering, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Zhe Yin
- Department of Material Science and Engineering, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Aiwei Tang
- Department of Material Science and Engineering, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
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Liu T, Wang J, Liu Y, Min L, Wang L, Yuan Z, Sun H, Huang L, Li L, Meng X. Cyano-Coordinated Tin Halide Perovskites for Wearable Health Monitoring and Weak Light Imaging. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400090. [PMID: 38433566 DOI: 10.1002/adma.202400090] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2024] [Revised: 02/24/2024] [Indexed: 03/05/2024]
Abstract
Low-toxicity tin halide perovskites with excellent optoelectronic properties are promising candidates for photodetection. However, tin halide perovskite photodetectors have suffered from high dark current owing to uncontrollable Sn2+ oxidation. Here, 2-cyanoethan-1-aminium iodide (CNI) is introduced in CH(NH2)2SnI3 (FASnI3) perovskite films to inhibit Sn2+ oxidation by the strong coordination interaction between the cyano group (C≡N) and Sn2+. Consequently, FASnI3-CNI films exhibit reduced nonradiative recombination and lower trap density. The self-powered photodetector based on FASnI3-CNI exhibits low dark current (1.04 × 10-9 A cm-2), high detectivity (2.2 × 1013 Jones at 785 nm), fast response speed (2.62 µs), and good stability. Mechanism studies show the increase in the activation energy required for thermal emission and generated carriers, leading to a lower dark current in the FASnI3-CNI photodetector. In addition, flexible photodetectors based on FASnI3-CNI, exhibiting high detectivity and fast response speed, are employed in wearable electronics to monitor the human heart rate under weak light and zero bias conditions. Finally, the FASnI3-CNI perovskite photodetectors are integrated with a 32 × 32 thin-film transistor backplane, capable of ultraweak light (170 nW cm-2) real-time imaging with high contrast, and zero power consumption, demonstrating the great potential for image sensor applications.
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Affiliation(s)
- Tianhua Liu
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junfang Wang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yongsi Liu
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Liangliang Min
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Lixia Wang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ziquan Yuan
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haoxuan Sun
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Le Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Liang Li
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Xiangyue Meng
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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Wang J, Huang J, Abdel-Shakour M, Liu T, Wang X, Pan Y, Wang L, Cui E, Hu JS, Yang S, Meng X. Colloidal Zeta Potential Modulation as a Handle to Control the Crystallization Kinetics of Tin Halide Perovskites for Photovoltaic Applications. Angew Chem Int Ed Engl 2024; 63:e202317794. [PMID: 38424035 DOI: 10.1002/anie.202317794] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/21/2023] [Revised: 02/13/2024] [Accepted: 02/29/2024] [Indexed: 03/02/2024]
Abstract
Tin halide perovskites (THPs) have demonstrated exceptional potential for various applications owing to their low toxicity and excellent optoelectronic properties. However, the crystallization kinetics of THPs are less controllable than its lead counterpart because of the higher Lewis acidity of Sn2+, leading to THP films with poor morphology and rampant defects. Here, a colloidal zeta potential modulation approach is developed to improve the crystallization kinetics of THP films inspired by the classical Derjaguin-Landau-Verwey-Overbeek (DLVO) theory. After adding 3-aminopyrrolidine dihydro iodate (APDI2) in the precursor solution to change the zeta potential of the pristine colloids, the total interaction potential energy between colloidal particles with APDI2 could be controllably reduced, resulting in a higher coagulation probability and a lower critical nuclei concentration. In situ laser light scattering measurements confirmed the increased nucleation rate of the THP colloids with APDI2. The resulting film with APDI2 shows a pinhole-free morphology with fewer defects, achieving an impressive efficiency of 15.13 %.
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Affiliation(s)
- Junfang Wang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junjie Huang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Muhammad Abdel-Shakour
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Chemistry Department, Faculty of Science, Assiut University, Assiut, 71516, Egypt
| | - Tianhua Liu
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xu Wang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yongle Pan
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lixia Wang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Enhao Cui
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jin-Song Hu
- Beijing National Laboratory for Molecular Sciences. CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Shihe Yang
- Guangdong Key Lab of Nano-Micro Material Research, School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Xiangyue Meng
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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Yang Y, Li Y, Chen D, Shen G. Multicolor vision perception of flexible optoelectronic synapse with high sensitivity for skin sunburn warning. MATERIALS HORIZONS 2024; 11:1934-1943. [PMID: 38345761 DOI: 10.1039/d3mh02154h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/23/2024]
Abstract
The development of flexible synaptic devices with multicolor signal response is important to exploit advanced artificial visual perception systems. The Sn vacancy-dominant memory and narrow gap characteristics of PEA2SnI4 make it suitable as a functional layer in ultraviolet-visible (UV-Vis) light-stimulated synaptic devices. However, such device tends to have high dark current and poor sensitivity, which is not conducive to subsequent information processing. Here, we proposed a self-powered flexible optoelectronic synapse based on PEA2SnI4 films. By introducing the electron transport layer (ETL), the dark current of the device is decreased by 5 orders of magnitude as compared to the Au/PEA2SnI4/ITO device, and the sensitivity is increased from 10.3% to 99.2% at 1.25 mW cm-2 light illumination (520 nm), indicating the vital role of the introduced ETL in promoting the separation of excitons in the interface and inhibiting the free carrier transfer. On this basis, the optoelectronic synaptic functions with integrated sensing, recognition, and memory features were realized. The array device exhibits UV-Vis light sensitivity and tunable synaptic plasticity, enabling its application for multicolor visual sensing and skin sunburn warning. This work provides an effective strategy for fabricating multicolor intelligent sensors and artificial vision systems, which facilitate the practical application of artificial optoelectronic synapses.
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Affiliation(s)
- Yaqian Yang
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Ying Li
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
| | - Di Chen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Guozhen Shen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
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9
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Chen X, Pasanen HP, Khan R, Tkachenko NV, Janáky C, Samu GF. Effect of Single-Crystal TiO 2/Perovskite Band Alignment on the Kinetics of Electron Extraction. J Phys Chem Lett 2024; 15:2057-2065. [PMID: 38357864 PMCID: PMC10895670 DOI: 10.1021/acs.jpclett.3c03536] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/18/2023] [Revised: 02/02/2024] [Accepted: 02/08/2024] [Indexed: 02/16/2024]
Abstract
The kinetics of electron extraction at the electron transfer layer/perovskite interface strongly affects the efficiency of a perovskite solar cell. By combining transient absorption and time-resolved photoluminescence spectroscopy, the electron extraction process between FA0.83Cs0.17Pb(I0.83Br0.17)3 and TiO2 single crystals with different orientations of (100), (110), and (111) were probed from subpicosecond to several hundred nanoseconds. It was revealed that the band alignment between the constituents influenced the relative electron extraction process. TiO2(100) showed the fastest overall and hot electron transfer, owing to the largest conduction band and Fermi level offset compared to FA0.83Cs0.17Pb(I0.83Br0.17)3. It was found that an early electron accumulation in these systems can have an influence on the following electron extraction on the several nanosecond time scale. Furthermore, the existence of a potential barrier at the TiO2/perovskite interface was also revealed by performing excitation fluence-dependent measurements.
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Affiliation(s)
- Xiangtian Chen
- Department of Physical Chemistry and Materials Science, Interdisciplinary Excellence Centre, University of Szeged, Aradi Square 1, Szeged H-6720, Hungary
| | - Hannu P Pasanen
- Photonic Compounds and Nanomaterials, Chemistry and Advanced Material Group, Tampere University, Tampere FI-33720, Finland
| | - Ramsha Khan
- Photonic Compounds and Nanomaterials, Chemistry and Advanced Material Group, Tampere University, Tampere FI-33720, Finland
| | - Nikolai V Tkachenko
- Photonic Compounds and Nanomaterials, Chemistry and Advanced Material Group, Tampere University, Tampere FI-33720, Finland
| | - Csaba Janáky
- Department of Physical Chemistry and Materials Science, Interdisciplinary Excellence Centre, University of Szeged, Aradi Square 1, Szeged H-6720, Hungary
- ELI ALPS, ELI-HU Non-Profit Ltd., Wolfgang Sandner street 3., Szeged H-6728, Hungary
| | - Gergely Ferenc Samu
- ELI ALPS, ELI-HU Non-Profit Ltd., Wolfgang Sandner street 3., Szeged H-6728, Hungary
- Department of Molecular and Analytical Chemistry, University of Szeged, Dóm square 7-8, Szeged H-6721, Hungary
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10
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Huang XY, Luo YL, Zhu X, Deng X, Yan X, Wang YJ, Zhou L, Tang YY. A Sn-Based Hybrid Ferroelastic Semiconductor with High-Temperature Dielectric Switching. Inorg Chem 2024; 63:2525-2532. [PMID: 38252455 DOI: 10.1021/acs.inorgchem.3c03718] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/23/2024]
Abstract
Organic-inorganic halide hybrids have been extensively developed and used in optoelectronic devices because of their superior performance such as ease of assembly, flexible structural tunability, and excellent optoelectronic properties. Ferroelastic strain might be used to modulate and control photoelectric properties such as photovoltaic voltage, while organic-inorganic hybrid ferroelastic semiconductors remain relatively unexplored. Herein, we successfully design a new Sn-base, lead-free hybrid ferroelastic semiconductor, [TPMA]2[SnCl6] (TPMA = benzyl trimethylammonium). It undergoes a high-temperature -3mF-1-type ferroelastic phase transition at 408 K, and intriguingly, its ferroelastic domains can be simultaneously switched under the stimulation of external heat and stress. The ferroelastic phase transition might be derived from the order-disorder transition of organic cations during heating and cooling. Moreover, [TPMA]2[SnCl6] also demonstrates a high-temperature dielectric switching property around 408 K, which has good stability and reproducibility. With those benefits, [TPMA]2[SnCl6] shows great potential in applications such as energy storage devices, optoelectronic devices, shape memory, intelligent switches, and so on.
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Affiliation(s)
- Xiao-Yun Huang
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People's Republic of China
| | - Yan-Ling Luo
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People's Republic of China
| | - Xuan Zhu
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People's Republic of China
| | - Xin Deng
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People's Republic of China
| | - Xin Yan
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People's Republic of China
| | - Yan-Juan Wang
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People's Republic of China
| | - Lin Zhou
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People's Republic of China
| | - Yuan-Yuan Tang
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People's Republic of China
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11
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Li Y, Zhou J, Tian Y, Wei Z, Shen G. 2D Ruddlesden-Popper Sn-Based Perovskite Weak Light Detector for Image Transmission and Reflection Imaging. SMALL METHODS 2024; 8:e2300026. [PMID: 37035949 DOI: 10.1002/smtd.202300026] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2023] [Revised: 02/28/2023] [Indexed: 06/19/2023]
Abstract
2D Ruddlesden-Popper Sn-based perovskite has excellent optoelectronic properties and weak halide ion migration characteristics, making it an ideal candidate for weak light detection, which has great potential in light communication, and medical applications. Although Sn-based perovskite photodetectors are developed, weak light detection is not demonstrated yet. Herein, a high-performance self-powered photodetector with the capability to detect ultra-weak light signals is designed based on vertical PEA2 SnI4 /Si nanowires heterojunction. Due to the low dark current and high light absorption efficiency, the devices present a remarkable responsivity of 42.4 mA W-1 , a high detectivity of 8 × 1011 Jones, and an ultralow noise current of 2.47 × 10-13 A Hz-1/2 . Especially, the device exhibits a high on-off current ratio of 18.6 at light signals as low as 4.60 nW cm-2 , revealing the capacity to detect ultra-weak light. The device is applied as a signal receiver and realized image transmission in light communication system. Moreover, high-resolution reflection imaging and multispectral imaging are obtained using the device as the sensor in the imaging system. These results reveal that 2D PEA2 SnI4 -based self-powered photodetectors with low-noise current possess enormous potential in future weak light detection.
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Affiliation(s)
- Ying Li
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, China
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Jingshu Zhou
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Yongzhi Tian
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Zhongming Wei
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Guozhen Shen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, China
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
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12
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Yang S, Wen J, Wu Y, Zhu H, Liu A, Hu Y, Noh YY, Chu J, Li W. Unlocking the Potential of Tin-Based Perovskites: Properties, Progress, and Applications in New-Era Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2304626. [PMID: 37641178 DOI: 10.1002/smll.202304626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2023] [Revised: 08/10/2023] [Indexed: 08/31/2023]
Abstract
Electronics have greatly promoted the development of modern society and the exploration of new semiconducting materials with low cost and high mobility continues to attract interest in the advance of next-generation electronic devices. Among emerging semiconductors, the metal-halide perovskite, especially the nontoxic tin (Sn)-based candidates, has recently made breakthroughs in the field of diverse electronic devices due to its excellent charge transport properties and cost-effective large-area deposition capability at low temperatures. To enable a more comprehensive understanding of this emerging research field and promote the development of new-generation perovskite electronics, this review aims to provide an in-depth understanding with the discussion of unique physical properties of Sn-based perovskites and the summarization of recent research progress of Sn-based perovskite field-effect transistors (FETs) and diverse electronic devices. The unique character of negligible ion migration is also discussed, which is fundamentally different from the lead-based counterparts and provides a great prerequisite for device application. The following section highlights the potential broad applications of Sn-perovskite FETs as a competitive and feasible technology. Finally, an outlook and remaining challenges are given to advance the progression of Sn-based perovskite FETs, especially on the origin and solution of stability problems toward high-performance Sn-based perovskite electronics.
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Affiliation(s)
- Shuzhang Yang
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Jincheng Wen
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Yanqiu Wu
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Huihui Zhu
- Department of Chemistry, Northwestern University, Evanston, Illinois, 60208, USA
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Ao Liu
- Department of Chemistry, Northwestern University, Evanston, Illinois, 60208, USA
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Yuanyuan Hu
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Yong-Young Noh
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Junhao Chu
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
- Key Laboratory of Polar Materials and Devices (Ministry of Education), East China Normal University, Shanghai, 200241, China
| | - Wenwu Li
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
- Key Laboratory of Polar Materials and Devices (Ministry of Education), East China Normal University, Shanghai, 200241, China
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13
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Liu Z, Zhang Z, Zhang X, Li X, Liu Z, Liao G, Shen Y, Wang M. Achieving High Responsivity and Detectivity in a Quantum-Dot-in-Perovskite Photodetector. NANO LETTERS 2023; 23:1181-1188. [PMID: 36753056 DOI: 10.1021/acs.nanolett.2c04144] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
This work reports on quantum dots (QDs) in perovskite photodetectors showing high optoelectronic performance via quantum-dot-assisted charge transmission. The self-powered broad-band photodetector constructed with SnS QDs in FAPb0.5Sn0.5I3 perovskite can capture incoming optical signals directly at zero bias. The QDs-in-perovskite photodetector exhibits a high sensitivity in the wavelength range from 300 to 1000 nm. Its responsivity at 850 nm reaches 521.7 mA W-1, and a high specific detectivity of 2.57 × 1012 jones can be achieved, which is well beyond the level of previous self-powered broad-band photodetectors. The capability of quantum-dot-in-perovskite photodetectors as data receivers has been further demonstrated in a visible-light communication application.
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Affiliation(s)
- Zhirong Liu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, People's Republic of China
| | - Zhiguo Zhang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, People's Republic of China
| | - Xuning Zhang
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Xiongjie Li
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, People's Republic of China
| | - Zhiyong Liu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Guanglan Liao
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Yan Shen
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, People's Republic of China
| | - Mingkui Wang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, People's Republic of China
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14
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Song J, Tang G, Cao J, Liu H, Zhao Z, Griggs S, Yang A, Wang N, Cheng H, Liu CK, McCulloch I, Yan F. Perovskite Solar Cell-Gated Organic Electrochemical Transistors for Flexible Photodetectors with Ultrahigh Sensitivity and Fast Response. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207763. [PMID: 36373546 DOI: 10.1002/adma.202207763] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2022] [Revised: 11/09/2022] [Indexed: 06/16/2023]
Abstract
Photodetectors (PDs) are the building block of various imaging and sensing applications. However, commercially available PDs based on crystalline inorganic semiconductors cannot meet the requirements of emerging wearable/implantable applications due to their rigidity and fragility, which creates the need for flexible devices. Here, a high-performance flexible PD is presented by gating an organic electrochemical transistor (OECT) with a perovskite solar cell. Due to the ultrahigh transconductance of the OECT, the device demonstrates a high gain of ≈106 , a fast response time of 67 µs and an ultrahigh detectivity of 6.7 × 1017 Jones to light signals under a low working voltage (≤0.6 V). Thanks to the ultrahigh sensitivity and fast response, the device can track photoplethysmogram signals and peripheral oxygen saturation under ambient light and even provide contactless remote sensing, offering a low-power and convenient way for continuous vital signs monitoring. This work offers a novel strategy for realizing high-performance flexible PDs that are promising for low-power, user-friendly and wearable optoelectronics.
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Affiliation(s)
- Jiajun Song
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
| | - Guanqi Tang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
| | - Jiupeng Cao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
| | - Hong Liu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
| | - Zeyu Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
| | - Sophie Griggs
- Department of Chemistry, University of Oxford, Oxford, OX1 3TA, UK
| | - Anneng Yang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
| | - Naixiang Wang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
| | - Haiyang Cheng
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
| | - Chun-Ki Liu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
| | - Iain McCulloch
- Department of Chemistry, University of Oxford, Oxford, OX1 3TA, UK
| | - Feng Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
- Research Institute of Intelligent Wearable Systems, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
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15
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Loi HL, Cao J, Liu CK, Xu Y, Li MG, Yan F. Highly Sensitive Broadband Phototransistors Based on Gradient Tin/Lead Mixed Perovskites. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205976. [PMID: 36408813 DOI: 10.1002/smll.202205976] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2022] [Revised: 11/03/2022] [Indexed: 06/16/2023]
Abstract
Highly sensitive broadband photodetectors are critical to numerous cutting-edge technologies such as biomedical imaging, environment monitoring, and night vision. Here, phototransistors based on mixed Sn/Pb perovskites are reported, which demonstrate ultrahigh responsivity, gain and specific detectivity in a broadband from ultraviolet to near-infrared region. The interface properties of the perovskite phototransistors are optimized by a special three-step cleaning-healing-cleaning treatment, leading to a high hole mobility in the channel. The highly sensitive performance of the mixed Sn/Pb perovskite phototransistors can be attributed to the vertical compositional heterojunction automatically formed during the film deposition, which is helpful for the separation of photocarriers thereby enhancing a photogating effect in the perovskite channel. This work demonstrates a convenient approach to achieving high-performance phototransistors through tuning compositional gradient in mixed-metal perovskite channels.
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Affiliation(s)
- Hok-Leung Loi
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
| | - Jiupeng Cao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
| | - Chun-Ki Liu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
| | - Yang Xu
- Division of Integrative Systems and Design, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, P. R. China
| | - Mitch Guijun Li
- Division of Integrative Systems and Design, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, P. R. China
| | - Feng Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- Research Institute of Intelligent Wearable Systems, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, P. R. China
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16
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Yao X, Wang Y, Wang L, Wang X, Bao Y. The Dissociation of Exciton During the Lasing of a Single CsPbBr 3 Microplate. J Phys Chem Lett 2022; 13:10851-10857. [PMID: 36382934 DOI: 10.1021/acs.jpclett.2c03242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
In this work, the lasing of a single CsPbBr3 microplate (MP) fabricated with chemical vapor deposition (CVD) is investigated from the viewpoint of exciton dissociation characterized with steady-state photoluminescence (PL) and time-resolved photoluminescence (TRPL). It is confirmed that the lasing performance is disturbed by the dissociation of excitons. The increase of lasing threshold with temperature originates from the dissociation of free excitons (FEs) to localized carriers (LCs), and the lasing failure is mostly ascribed to the dissociation of FEs to free carriers (FCs). The working temperature of micro/nanolasers based on metal halide perovskites (MHPs) could be raised up to the temperature determined by exciton binding energy while the laser heating effect is dealt with well. These findings advance our understanding on the photophysics of the lasing behaviors of micro/nanocavities based on MHPs and help us promote their performance by having better thermal management.
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Affiliation(s)
- Xiuru Yao
- State Key Laboratory of Superhard Materials & School of Physics, Jilin University, Changchun130012, China
| | - Yu Wang
- State Key Laboratory of Superhard Materials & School of Physics, Jilin University, Changchun130012, China
| | - Lu Wang
- State Key Laboratory of Superhard Materials & School of Physics, Jilin University, Changchun130012, China
| | - Xin Wang
- State Key Laboratory of Superhard Materials & School of Physics, Jilin University, Changchun130012, China
| | - Yongjun Bao
- State Key Laboratory of Superhard Materials & School of Physics, Jilin University, Changchun130012, China
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17
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Chowdhury TH, Reo Y, Yusoff ARBM, Noh Y. Sn-Based Perovskite Halides for Electronic Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203749. [PMID: 36257820 PMCID: PMC9685468 DOI: 10.1002/advs.202203749] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/12/2022] [Indexed: 06/16/2023]
Abstract
Because of its less toxicity and electronic structure analogous to that of lead, tin halide perovskite (THP) is currently one of the most favorable candidates as an active layer for optoelectronic and electric devices such as solar cells, photodiodes, and field-effect transistors (FETs). Promising photovoltaics and FETs performances have been recently demonstrated because of their desirable electrical and optical properties. Nevertheless, THP's easy oxidation from Sn2+ to Sn4+ , easy formation of tin vacancy, uncontrollable film morphology and crystallinity, and interface instability severely impede its widespread application. This review paper aims to provide a basic understanding of THP as a semiconductor by highlighting the physical structure, energy band structure, electrical properties, and doping mechanisms. Additionally, the key chemical instability issues of THPs are discussed, which are identified as the potential bottleneck for further device development. Based on the understanding of the THPs properties, the key recent progress of THP-based solar cells and FETs is briefly discussed. To conclude, current challenges and perspective opportunities are highlighted.
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Affiliation(s)
- Towhid H. Chowdhury
- Department of Chemical EngineeringPohang University of Science and Technology77 Cheongam‐Ro, Nam‐GuPohang37673Republic of Korea
| | - Youjin Reo
- Department of Chemical EngineeringPohang University of Science and Technology77 Cheongam‐Ro, Nam‐GuPohang37673Republic of Korea
| | - Abd Rashid Bin Mohd Yusoff
- Department of Chemical EngineeringPohang University of Science and Technology77 Cheongam‐Ro, Nam‐GuPohang37673Republic of Korea
| | - Yong‐Young Noh
- Department of Chemical EngineeringPohang University of Science and Technology77 Cheongam‐Ro, Nam‐GuPohang37673Republic of Korea
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18
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Liu CK, Piradi V, Song J, Wang Z, Wong LW, Tan EHL, Zhao J, Zhu X, Yan F. 2D Metal-Organic Framework Cu 3 (HHTT) 2 Films for Broadband Photodetectors from Ultraviolet to Mid-Infrared. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2204140. [PMID: 35765163 DOI: 10.1002/adma.202204140] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2022] [Revised: 06/17/2022] [Indexed: 06/15/2023]
Abstract
Cu3 (HHTT)2 (HHTT: 2,3,7,8,12,13-hexahydroxytetraazanaphthotetraphene) is a novel 2D conjugated metal-organic framework (2D c-MOF) with efficient in-plane d-π conjugations and strong interlayer π-π interactions while the growth of Cu3 (HHTT)2 thin films has never been reported until now. Here, the successful fabrication of highly oriented wafer-scale Cu3 (HHTT)2 thin films with a layer-by-layer growth method on various substrates is presented. Its semiconducting behavior and carrier transport mechanisms are clarified through temperature and frequency-dependent conductivity measurements. Flexible photodetectors based on Cu3 (HHTT)2 thin films exhibit reliable photoresponses at room temperature in a wavelength region from UV to mid-IR, which is much broader than those of solution-processed broadband photodetectors reported previously. Moreover, the photodetectors can show a typical synaptic behavior and excellent data recognition accuracy in artificial neural networks. This work opens a window for the exploration of high-performance and multifunctional optoelectronic devices based on 2D c-MOFs.
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Affiliation(s)
- Chun-Ki Liu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
| | - Venkatesh Piradi
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
- Department of Chemistry, Hong Kong Baptist University, Kowloon Tong, Kowloon, Hong Kong, P. R. China
| | - Jiajun Song
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
| | - Ziru Wang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
| | - Lok-Wing Wong
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
| | - Eng-Hao-Louis Tan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
| | - Xunjin Zhu
- Department of Chemistry, Hong Kong Baptist University, Kowloon Tong, Kowloon, Hong Kong, P. R. China
| | - Feng Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
- Research Institute of Intelligent Wearable Systems, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
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19
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Liu F, Cai X, Liu K, Rafique S, Behrouznejad F, Bu K, Lü X, Wang J, Wu S, Wang X, Pan Y, Li X, Cai Y, Zhu J, Qiu Z, Yu A, Shen H, Wang J, Zhan Y. New Lead-free Organic-Inorganic Hybrid Semiconductor Single Crystals for a UV-Vis-NIR Broadband Photodetector. ACS APPLIED MATERIALS & INTERFACES 2022; 14:33850-33860. [PMID: 35852172 DOI: 10.1021/acsami.2c08116] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Organic-inorganic hybrid semiconducting (OIHS) materials, which can detect broader spectral regions, are highly desired in several applications including biomedical imaging, night vision, and optical communications. Although lead (Pb)-halide perovskites have reached a mature research stage, high toxicity of Pb hinders their large-scale viability. Tin (Sn)-based perovskites are the most common OIHS broadband light absorbers that replace toxic Pb; however, they are extremely unstable due to the notorious Sn2+ oxidation. Herein, a novel, non-toxic, and solution-processed millimeter-sized OIHS single crystal [Ga(C3H7NO)6](I3)3 has been grown at room temperature. Both the absorption measurement and density functional theory calculations have confirmed a narrow indirect band gap of 1.32 eV. The corresponding photodetector based on this single crystal demonstrated excellent performance including an ultraviolet-visible-near infrared (UV-vis-NIR) response between 325 and 1064 nm, fast response time (trise/tdecay = 3.8 ms/5.4 ms), and profound air storage stability (41 h), thus outperforming most common photodetectors based on Sn-based perovskites. This work not only provides a profound understanding of this novel organic-inorganic single-crystal material but also demonstrates its great potential to realize the high-performance UV-vis-NIR broadband photodetectors.
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Affiliation(s)
- Fengcai Liu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Xia Cai
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Kai Liu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Saqib Rafique
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Fatemeh Behrouznejad
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Kejun Bu
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Xujie Lü
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Jiao Wang
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Shuaiqin Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, Shanghai 200083, China
| | - Xudong Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, Shanghai 200083, China
| | - Yiyi Pan
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Xiaoguo Li
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Yichen Cai
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Junqiang Zhu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Zhijun Qiu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Anran Yu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Hong Shen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, Shanghai 200083, China
| | - Jianlu Wang
- Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
- Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, 2005 Songhu Road, Shanghai 200438, P. R. China
| | - Yiqiang Zhan
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
- Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, 2005 Songhu Road, Shanghai 200438, P. R. China
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20
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Abiram G, Thanihaichelvan M, Ravirajan P, Velauthapillai D. Review on Perovskite Semiconductor Field-Effect Transistors and Their Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2396. [PMID: 35889621 PMCID: PMC9322712 DOI: 10.3390/nano12142396] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/16/2022] [Revised: 06/29/2022] [Accepted: 07/02/2022] [Indexed: 12/10/2022]
Abstract
Perovskite materials are considered as the most alluring successor to the conventional semiconductor materials to fabricate solar cells, light emitting diodes and electronic displays. However, the use of the perovskite semiconductors as a channel material in field effect transistors (FET) are much lower than expected due to the poor performance of the devices. Despite low attention, the perovskite FETs are used in widespread applications on account of their unique opto-electrical properties. This review focuses on the previous works on perovskite FETs which are summarized into tables based on their structures and electrical properties. Further, this review focuses on the applications of perovskite FETs in photodetectors, phototransistors, light emitting FETs and memory devices. Moreover, this review highlights the challenges faced by the perovskite FETs to meet the current standards along with the future directions of these FETs. Overall, the review summarizes all the available information on existing perovskite FET works and their applications reported so far.
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Affiliation(s)
- Gnanasampanthan Abiram
- Department of Physics, University of Jaffna, Jaffna 40 000, Sri Lanka; (G.A.); (P.R.)
- Department of Computer Science, Electrical Engineering and Mathematical Sciences, Western Norway University of Applied Sciences, Inndalsveien 28, 5063 Bergen, Norway
| | | | | | - Dhayalan Velauthapillai
- Department of Computer Science, Electrical Engineering and Mathematical Sciences, Western Norway University of Applied Sciences, Inndalsveien 28, 5063 Bergen, Norway
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21
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Sen A, Park H, Pujar P, Bala A, Cho H, Liu N, Gandla S, Kim S. Probing the Efficacy of Large-Scale Nonporous IGZO for Visible-to-NIR Detection Capability: An Approach toward High-Performance Image Sensor Circuitry. ACS NANO 2022; 16:9267-9277. [PMID: 35696345 DOI: 10.1021/acsnano.2c01773] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The technological ability to detect a wide spectrum range of illuminated visible-to-NIR is substantially improved for an amorphous metal oxide semiconductor, indium gallium zinc oxide (IGZO), without employing an additional photoabsorber. The fundamentally tuned morphology via structural engineering results in the creation of nanopores throughout the entire thickness of ∼30 nm. See-through nanopores have edge functionalization with vacancies, which leads to a large density of substates near the conduction band minima and valence band maxima. The presence of nanoring edges with a high concentration of vacancies is investigated using chemical composition analysis. The process of creating a nonporous morphology is sophisticated and is demonstrated using a wafer-scale phototransistor array. The performance of the phototransistors is assessed in terms of photosensitivity (S) and photoresponsivity (R); both are of high magnitudes (S = 8.6 × 104 at λex = 638 nm and Pinc = 512 mW cm2-; R = 120 A W1- at Pinc = 2 mW cm2- for the same λex). Additionally, the 7 × 5 array of 35 phototransistors is effective in sensing and reproducing the input image by responding to selectively illuminated pixels.
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Affiliation(s)
- Anamika Sen
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Heekyeong Park
- Harvard Institute of Medicine, Harvard Medical School, Harvard University, Brigham and Women's Hospital, Boston, Massachusetts 02115, United States
| | - Pavan Pujar
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Arindam Bala
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Haewon Cho
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Na Liu
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Srinivas Gandla
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Sunkook Kim
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do 16419, Republic of Korea
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22
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Liu D, Liu F, Liu Y, Pang Z, Zhuang X, Yin Y, Dong S, He L, Tan Y, Liao L, Chen F, Yang ZX. Schottky-Contacted High-Performance GaSb Nanowires Photodetectors Enabled by Lead-Free All-Inorganic Perovskites Decoration. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200415. [PMID: 35257494 DOI: 10.1002/smll.202200415] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2022] [Revised: 02/14/2022] [Indexed: 06/14/2023]
Abstract
The surface Fermi level pinning effect promotes the formation of metal-independent Ohmic contacts for the high-speed GaSb nanowires (NWs) electronic devices, however, it limits next-generation optoelectronic devices. In this work, lead-free all-inorganic perovskites with broad bandgaps and low work functions are adopted to decorate the surfaces of GaSb NWs, demonstrating the success in the construction of Schottky-contacts by surface engineering. Benefiting from the expected Schottky barrier, the dark current is reduced to 2 pA, the Ilight /Idark ratio is improved to 103 and the response time is reduced by more than 15 times. Furthermore, a Schottky-contacted parallel array GaSb NWs photodetector is also fabricated by the contact printing technology, showing a higher photocurrent and a low dark current of 15 pA, along with the good infrared photodetection ability for a concealed target. All results guide the construction of Schottky-contacts by surface decorations for next-generation high-performance III-V NWs optoelectronics devices.
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Affiliation(s)
- Dong Liu
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Fengjing Liu
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Yue Liu
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Zhiyong Pang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Xinming Zhuang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Yanxue Yin
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Shengpan Dong
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University Nanjing, Nanjing, 210096, China
| | - Longbing He
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University Nanjing, Nanjing, 210096, China
| | - Yang Tan
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Lei Liao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University Changsha, Changsha, 410082, China
| | - Feng Chen
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Zai-Xing Yang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
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23
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Zhang Z, Yang S, Hu J, Peng H, Li H, Tang P, Jiang Y, Tang L, Zou B. One-pot synthesis of novel ligand-free tin(II)-based hybrid metal halide perovskite quantum dots with high anti-water stability for solution-processed UVC photodetectors. NANOSCALE 2022; 14:4170-4180. [PMID: 35230370 DOI: 10.1039/d1nr07893c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Recently, lead-based halide perovskites have gained extensive attention due to their outstanding optoelectronic properties. However, the toxicity of lead would seriously limit its future application. To address these issues, in this work novel ligand-free organic-inorganic hybrid metal halide TBASnCl3 (C16H36NSnCl3) quantum dots are synthesized by a one-pot method at room temperature, and they showed high anti-water stability and high potential applications for high-performance UVC photodetectors. Our experimental data showed that the responsivity of the lateral photodetectors Au/TBASnCl3/Au, in which the active layer (i.e. TBASnCl3) was synthesized by further introducing SnF2 as a precursor besides SnCl2, reached 7.3 mA W-1 with a specific detectivity of 1.67 × 1011 Jones under 0.36 mW cm-2 254 nm illumination at -5 V, and it showed a long lifetime even in an environment with an air humidity of 60%. Therefore, it laid a solid foundation for further fabricating lead-free metal halide optoelectronic devices.
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Affiliation(s)
- Zhenheng Zhang
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China.
| | - Shengyi Yang
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China.
- Kunming Institute of Physics, Kunming 650223, P. R. China
| | - Jinming Hu
- Centre for Artificial-Intelligence Nanophotonics, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai, 200093, P. R. China
| | - Hui Peng
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China.
| | - Hailong Li
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China.
| | - Peiyun Tang
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China.
| | - Yurong Jiang
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Libin Tang
- Kunming Institute of Physics, Kunming 650223, P. R. China
| | - Bingsuo Zou
- School of Physical Science and Technology, Guangxi University, Nanning 530004, P. R. China
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24
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Hu L, Duan L, Yao Y, Chen W, Zhou Z, Cazorla C, Lin C, Guan X, Geng X, Wang F, Wan T, Wu S, Cheong S, Tilley RD, Liu S, Yuan J, Chu D, Wu T, Huang S. Quantum Dot Passivation of Halide Perovskite Films with Reduced Defects, Suppressed Phase Segregation, and Enhanced Stability. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2102258. [PMID: 34845861 PMCID: PMC8805552 DOI: 10.1002/advs.202102258] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2021] [Revised: 10/18/2021] [Indexed: 05/04/2023]
Abstract
Structural defects are ubiquitous for polycrystalline perovskite films, compromising device performance and stability. Herein, a universal method is developed to overcome this issue by incorporating halide perovskite quantum dots (QDs) into perovskite polycrystalline films. CsPbBr3 QDs are deposited on four types of halide perovskite films (CsPbBr3 , CsPbIBr2 , CsPbBrI2 , and MAPbI3 ) and the interactions are triggered by annealing. The ions in the CsPbBr3 QDs are released into the thin films to passivate defects, and concurrently the hydrophobic ligands of QDs self-assemble on the film surfaces and grain boundaries to reduce the defect density and enhance the film stability. For all QD-treated films, PL emission intensity and carrier lifetime are significantly improved, and surface morphology and composition uniformity are also optimized. Furthermore, after the QD treatment, light-induced phase segregation and degradation in mixed-halide perovskite films are suppressed, and the efficiency of mixed-halide CsPbIBr2 solar cells is remarkably improved to over 11% from 8.7%. Overall, this work provides a general approach to achieving high-quality halide perovskite films with suppressed phase segregation, reduced defects, and enhanced stability for optoelectronic applications.
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Affiliation(s)
- Long Hu
- School of EngineeringMacquarie University Sustainable Energy Research CentreMacquarie UniversitySydneyNSW2109Australia
- School of Materials Science and EngineeringUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Leiping Duan
- School of Materials Science and EngineeringUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Yuchen Yao
- School of Materials Science and EngineeringUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Weijian Chen
- School of Photovoltaic and Renewable Energy EngineeringUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Zizhen Zhou
- School of Materials Science and EngineeringUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Claudio Cazorla
- Departament de FísicaUniversitat Politècnica de CatalunyaCampus Nord B4‐B5BarcelonaE‐08034Spain
| | - Chun‐Ho Lin
- School of Materials Science and EngineeringUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Xinwei Guan
- School of Materials Science and EngineeringUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Xun Geng
- School of Materials Science and EngineeringUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Fei Wang
- School of Materials Science and EngineeringUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Tao Wan
- School of Materials Science and EngineeringUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Shuying Wu
- School of EngineeringMacquarie University Sustainable Energy Research CentreMacquarie UniversitySydneyNSW2109Australia
| | - Soshan Cheong
- Electron Microscope UnitMark Wainwright Analytical CentreUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Richard D. Tilley
- Electron Microscope UnitMark Wainwright Analytical CentreUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Shanqin Liu
- School of Chemistry and Chemical EngineeringHenan Institute of Science and TechnologyXinxiangHenan453003P. R. China
| | - Jianyu Yuan
- Institute of Functional Nano & Soft Materials (FUNSOM)Jiangsu Key Laboratory for Carbon‐Based Functional Materials and DevicesJoint International Research Laboratory of Carbon‐Based Functional Materials and DevicesSoochow University199 Ren‐Ai Road, Suzhou Industrial ParkSuzhouJiangsu215123P. R. China
| | - Dewei Chu
- School of Materials Science and EngineeringUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Tom Wu
- School of Materials Science and EngineeringUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Shujuan Huang
- School of EngineeringMacquarie University Sustainable Energy Research CentreMacquarie UniversitySydneyNSW2109Australia
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25
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26
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Ma X, Xu Y, Li S, Lo TW, Zhang B, Rogach AL, Lei D. A Flexible Plasmonic-Membrane-Enhanced Broadband Tin-Based Perovskite Photodetector. NANO LETTERS 2021; 21:9195-9202. [PMID: 34672605 DOI: 10.1021/acs.nanolett.1c03050] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Lead-free perovskite quantum dots (QDs) have been widely investigated for optoelectronic devices because of their excellent electrical and optical properties. However, optoelectronic devices based on such lead-free perovskites still have much lower performance than those made of Pb-based counterparts. Herein, we developed a lead-free photodetector with an enhanced broadband spectral response ranging from 300 to 630 nm. By balancing plasmonic near-field enhancement and surface energy quenching through precisely controlling the thickness of Al2O3 spacer between the CsSnBr3 QDs and silver nanoparticle membrane, the photodetector with 5 nm thick Al2O3 experiences a maximum photocurrent enhancement of 6.5-fold at 410 nm, with a responsivity of 62.3 mA/W and detectivity of 4.27 × 1011 Jones. Moreover, its photocurrent shows a negligible decrease after 100 cycles of bending, which is ascribed to the tension-offset induced by the self-assembled nanoparticle membrane. The proposed plasmonic membrane enhancement provides a great potential for high-performance perovskite optoelectronic devices.
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Affiliation(s)
- Xue Ma
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S.A.R. 999077, People's Republic of China
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, People's Republic of China
| | - Yunkun Xu
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S.A.R. 999077, People's Republic of China
| | - Siqi Li
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S.A.R. 999077, People's Republic of China
| | - Tsz Wing Lo
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S.A.R. 999077, People's Republic of China
| | - Baolin Zhang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, People's Republic of China
| | - Andrey L Rogach
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S.A.R. 999077, People's Republic of China
- Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S.A.R. 999077, People's Republic of China
| | - Dangyuan Lei
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S.A.R. 999077, People's Republic of China
- Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S.A.R. 999077, People's Republic of China
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27
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Huang X, Guo Y, Liu Y. Perovskite photodetectors and their application in artificial photonic synapses. Chem Commun (Camb) 2021; 57:11429-11442. [PMID: 34642713 DOI: 10.1039/d1cc04447h] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
Organic-inorganic hybrid perovskites exhibit superior optoelectrical properties and have been widely used in photodetectors. Perovskite photodetectors with excellent detectivity have great potential for developing artificial photonic synapses which can merge data transmission and storage. They are highly desired for next generation neuromorphic computing. The recent progress of perovskite photodetectors and their application in artificial photonic synapses are summarized in this review. Firstly, the key performance parameters of photodetectors are briefly introduced. Secondly, the recent research progress of photodetectors including photoconductors, photodiodes, and phototransistors is summarized. Finally, the applications of perovskite photodetectors in artificial photonic synapses in recent years are highlighted. All these demonstrate the great potential of perovskite photonic synapses for the development of artificial intelligence.
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Affiliation(s)
- Xin Huang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
| | - Yunlong Guo
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
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28
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Li T, Ma J, Chen X, Yan J, Zhang M, Wu D, Tian Y, Li X, Shi Z. Antisolvent-Processed One-Dimensional Ternary Rubidium Copper Bromine Microwires for Sensitive and Flexible Ultraviolet Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:49007-49016. [PMID: 34619964 DOI: 10.1021/acsami.1c13566] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Recently, newly emerging halide perovskites have aroused intensive attention in photoelectric fields in virtue of their good properties, such as well-balanced carrier transport, large light absorption coefficient, tunable band gap, and low-temperature solution processing technique. Nevertheless, their future commercial development is severely hampered by lead toxicity and instability of such materials. In this work, one-dimensional Rb2CuBr3 single-crystal microwires (MWs) were prepared by antisolvent engineering, and they were further employed as absorbers to prepare sensitive ultraviolet (UV) photodetectors. The optical band gap of Rb2CuBr3 MWs is measured to be 3.83 eV, exhibiting an excellent UV absorption. The fabricated device demonstrates a remarkable UV light detection ability with a specific detectivity of 1.23 × 1011 Jones, responsivity of 113.64 mA W-1, and response speed of 69.31/87.55 ms under light illumination of 265 nm. Meanwhile, the proposed photodetector without any encapsulation shows outstanding stability and repeatability. After storing in ambient air for 2 weeks, the light detection ability remains basically unchanged. Further, a flexible photodetector was fabricated with the same structure, which demonstrates a remarkable bending endurance. These results confirm the great potential of Rb2CuBr3 for high-performance UV photodetectors, increasing the possibility for assembly of optoelectronic systems.
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Affiliation(s)
- Tianyu Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Jingli Ma
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Xu Chen
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Jingjing Yan
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Mengyao Zhang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Di Wu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Yongtao Tian
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Xinjian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
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29
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Wang G, Mei S, Liao J, Wang W, Tang Y, Zhang Q, Tang Z, Wu B, Xing G. Advances of Nonlinear Photonics in Low-Dimensional Halide Perovskites. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100809. [PMID: 34121324 DOI: 10.1002/smll.202100809] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/08/2021] [Revised: 03/17/2021] [Indexed: 06/12/2023]
Abstract
Hybrid halide perovskites emerging as a highly promising class of functional materials for semiconductor optoelectronic applications have drawn great attention from worldwide researchers. In the past few years, prominent nonlinear optical properties have been demonstrated in perovskite bulk structures indicating their bright prospect in the field of nonlinear optics (NLO). Following the surge of 3D perovskites, more recently, the low-dimensional perovskites (LDPs) materials ranging from two-, one-, to zero-dimension such as quantum-wells or colloidal nanostructures have displayed unexpectedly attractive NLO response due to the strong quantum confinement, remarkable exciton effect, and structural diversity. In this perspective, the current state of the art is reviewed in the field of NLO for LDP materials. The relationship between confinement effect and NLO is analyzed systematically to give a comprehensive understanding of the function of dimension reduction. Furthermore, future directions and challenges toward the improvement of the NLO in LDP materials are discussed to provide an outlook in this rapidly developing field.
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Affiliation(s)
- Gang Wang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao SAR, 999078, P. R. China
| | - Shiliang Mei
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao SAR, 999078, P. R. China
| | - Jinfeng Liao
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao SAR, 999078, P. R. China
| | - Wei Wang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Yuxin Tang
- College of Chemical Engineering, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Zikang Tang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao SAR, 999078, P. R. China
| | - Bo Wu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao SAR, 999078, P. R. China
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Cong H, Chu X, Wan F, Chu Z, Wang X, Ma Y, Jiang J, Shen L, You J, Xue C. Broadband Photodetector Based on Inorganic Perovskite CsPbBr 3 /GeSn Heterojunction. SMALL METHODS 2021; 5:e2100517. [PMID: 34927872 DOI: 10.1002/smtd.202100517] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/13/2021] [Revised: 06/04/2021] [Indexed: 06/14/2023]
Abstract
Photodetectors with broadband response spectrum have attracted great interest in many application areas such as imaging, gas sensing, and night vision. Here, a high performance broadband photodetector is demonstrated with inorganic perovskite CsPbBr3 /GeSn heterojunction, detection range can be covered from 450 to 2200 nm. The responsivity of heterojunction device can achieve as high as 129 mA W-1 under illuminated light of 532 nm, which is 4.92 times larger than that of a GeSn based device. As the CsPbBr3 can also act as anti-reflective coating for infrared wavelength, the infrared band responsivity at wavelength of 2200 nm can also be raised by 1.42 times. In addition, the device with all inorganic components is showed good stability, while keeping in the dry environment, the device can sustain its 90% original after 550 h storage. These results show the inorganic perovskite/GeSn heterojunction device is of great potential in broadband photodetection with high responsivity.
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Affiliation(s)
- Hui Cong
- State Key Laboratory for Supperlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, P. R. China
| | - Xinbo Chu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, P. R. China
| | - Fengshuo Wan
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zema Chu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, P. R. China
| | - Xiaoyu Wang
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yao Ma
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Jizhong Jiang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Liang Shen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Jingbi You
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Chunlai Xue
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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Zhang Y, Ma Y, Wang Y, Zhang X, Zuo C, Shen L, Ding L. Lead-Free Perovskite Photodetectors: Progress, Challenges, and Opportunities. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2006691. [PMID: 34028107 DOI: 10.1002/adma.202006691] [Citation(s) in RCA: 51] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2020] [Revised: 01/04/2021] [Indexed: 05/24/2023]
Abstract
State-of-the-art photodetectors which apply hybrid perovskite materials have emerged as powerful candidates for next-generation light sensing. Among them, lead-based ones are the most popular beyond doubt on account of their unique and superior optoelectronic properties. Nevertheless, trade-off toward commercialization exists between nontoxicity and high performance, with the poor stability of lead-based perovskites, indicating that it is indispensable to substitute lead with nontoxic element meanwhile bringing about a comparable figure of merit of photodetectors and relatively long-term stability. Herein, recent advances in lead-free perovskite photodetectors are reviewed, analyzing the principle while designing new materials and highlighting some remarkable progress, which are comparable, even superior, to lead-based photodetectors. Furthermore, their potential strategy in optical communication, image sensing, narrowband photodetection, etc., is examined and a perspective on developing new materials and photodetectors with superior properties for more practical applications is provided.
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Affiliation(s)
- Yiqi Zhang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Yao Ma
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Yaxi Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Xindong Zhang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Chuantian Zuo
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Liang Shen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Liming Ding
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, China
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32
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Wang T, Zheng F, Tang G, Cao J, You P, Zhao J, Yan F. 2D WSe 2 Flakes for Synergistic Modulation of Grain Growth and Charge Transfer in Tin-Based Perovskite Solar Cells. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2004315. [PMID: 34105283 PMCID: PMC8188186 DOI: 10.1002/advs.202004315] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2020] [Revised: 02/08/2021] [Indexed: 05/27/2023]
Abstract
Tin (Sn)-based perovskites with favorable optoelectronic properties and ideal bandgaps have emerged as promising alternatives to toxic lead (Pb)-based perovskites for photovoltaic applications. However, it is challenging to obtain high-quality Sn-based perovskite films by solution process. Here, liquid-exfoliated 2D transition-metal dichalcogenides (i.e., MoS2 , WS2 , and WSe2 ) with smooth and defect-free surfaces are applied as growth templates for spin-coated FASnI3 perovskite films, leading to van der Waals epitaxial growth of perovskite grains with a growth orientation along (100). The authors find that WSe2 has better energy alignment with FASnI3 than MoS2 and WS2 and results in a cascade band structure in resultant perovskite solar cells (PSCs), which can facilitate hole extraction and suppress interfacial charge recombination in the devices. The WSe2 -modified PSCs show a power conversion efficiency up to 10.47%, which is among the highest efficiency of FASnI3 -based PSCs. The appealing solution phase epitaxial growth of FASnI3 perovskite on 2D WSe2 flakes is expected to find broad applications in optoelectronic devices.
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Affiliation(s)
- Tianyue Wang
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloon999077Hong Kong
| | - Fangyuan Zheng
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloon999077Hong Kong
| | - Guanqi Tang
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloon999077Hong Kong
| | - Jiupeng Cao
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloon999077Hong Kong
| | - Peng You
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloon999077Hong Kong
| | - Jiong Zhao
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloon999077Hong Kong
| | - Feng Yan
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloon999077Hong Kong
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33
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Low-Toxicity Perovskite Applications in Carbon Electrode Perovskite Solar Cells—A Review. ELECTRONICS 2021. [DOI: 10.3390/electronics10101145] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
Perovskite solar cells (PSCs) with earth-abundant carbon as an effective replacer for unstable hole-transporting materials and expensive electrodes is a recently proposed structure promising better air and moisture stability. In this review paper, we report on the latest advances and state of the art of Pb-free and low-Pb-content perovskites, used as absorbers in carbon-based perovskite solar cells. The focus is on the implementation of these, environmentally friendly and non-toxic, structures in PSCs with a carbon electrode as a replacement of the noble metal electrode typically used (C-PSCs). The motivation for this study has been the great potential that C-PSCs have shown for the leap towards the commercialization of PSCs. Some of their outstanding properties include low cost, high-stability, ambient processability and compatibility with most up-scaling methods (e.g., printing). By surpassing the key obstacle of toxicity, caused by the Pb content of the highest-performing perovskites, and by combining the advantages of C-PSCs with the Pb-free perovskites low toxicity, this technology will move one step further; this review summarizes the most promising routes that have been reported so far towards that direction.
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Li Y, Shi Z, Liang W, Ma J, Chen X, Wu D, Tian Y, Li X, Shan C, Fang X. Recent advances toward environment-friendly photodetectors based on lead-free metal halide perovskites and perovskite derivatives. MATERIALS HORIZONS 2021; 8:1367-1389. [PMID: 34846447 DOI: 10.1039/d0mh01567a] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Recently, metal-halide perovskites have emerged as promising materials for photodetector (PD) applications owing to their superior optoelectronic properties, such as ambipolar charge transport characteristics, high carrier mobility, and so on. In the past few years, rapid progress in lead-based perovskite PDs has been witnessed. However, the critical environmental instability and lead-toxicity seriously hinder their further applications and commercialization. Therefore, searching for environmentally stable and lead-free halide perovskites (LFHPs) to address the above hurdles is certainly a worthwhile subject. In this review, we present a comprehensive overview of currently explored LFHPs with an emphasis on their crystal structures, optoelectronic properties, synthesis and modification methods, as well as the PD applications. LFHPs are classified into four categories according to the replacement strategies of Pb2+, including AB(ii)X3, A3B(iii)2X9, A2B(i)B(iii)'X6, and newly-emerging perovskite derivatives. Then, we give a demonstration of the preliminary achievements and limitations in environment-friendly PDs based on such LFHPs and perovskite derivatives, and also discuss their applications in biological synapses, imaging, and X-ray detection. With the perspective of their properties and current challenges, we provide an outlook for future directions in this rapidly evolving field to achieve high-quality LFHPs and perovskite derivatives for a broader range of fundamental research and practical applications.
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Affiliation(s)
- Ying Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China.
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Jo C, Lee S, Kim J, Heo JS, Kang DW, Park SK. Enhanced Electro-Optical Performance of Inorganic Perovskite/a-InGaZnO Phototransistors Enabled by Sn-Pb Binary Incorporation with a Selective Photonic Deactivation. ACS APPLIED MATERIALS & INTERFACES 2020; 12:58038-58048. [PMID: 33332112 DOI: 10.1021/acsami.0c17862] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Optoelectronic applications using perovskites have emerged as one of the most promising platforms such as phototransistors, photovoltaics, and photodetectors. However, high-performance and reliable perovskite photonic devices are often hindered by the limited spectral ranges of the perovskite system along with the lack of appropriate processing technologies for the implementation of reliable device architectures. Here, we explore a hybrid phototransistor with a heterojunction of a Sn-Pb binary mixed halide perovskite (CsSn0.6Pb0.4I2.6Br0.4) light absorber and an amorphous-In-Ga-Zn-O (a-IGZO) charge carrying layer. By incorporating Sn-Pb binary components with an all-inorganic base, broadening of light-absorbing spectral ranges with enhanced stability has been achieved, indicating inevitable highly increased conductivity, which triggers a high off-current of the devices. Accordingly, the selectively ultraviolet (UV)-irradiated electrical deactivation (SUED) process is carried out to suppress the high off-current with a reliable device structure. Particularly, it is noted that the selective UV irradiation can facilitate oxidation and distortion of the chemical structure in specific perovskite regions, providing enhanced gate bias modulation of the phototransistor with an increased on/off-current ratio from ∼103 to ∼106. Finally, the SUED-processed phototransistor exhibits an improvement in the photosensitivity by more than 3 orders of magnitude up to 8.0 × 104 and detects in the spectral range from visible to near-infrared (NIR) light (∼860 nm) with good on/off switching behaviors.
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Affiliation(s)
- Chanho Jo
- Department of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Seojun Lee
- School of Energy Systems Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Jaehyun Kim
- Department of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Jae Sang Heo
- Department of Medicine, University of Connecticut School of Medicine, Farmington, Connecticut 06030, United States
| | - Dong-Won Kang
- School of Energy Systems Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Sung Kyu Park
- Department of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
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Li MY, Shen K, Xu H, Ren A, Lee J, Kunwar S, Liu S, Wu J. Enhanced Spatial Light Confinement of All Inorganic Perovskite Photodetectors Based on Hybrid Plasmonic Nanostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2004234. [PMID: 33107207 DOI: 10.1002/smll.202004234] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2020] [Revised: 08/27/2020] [Indexed: 06/11/2023]
Abstract
3D incident light confinement by radical electromagnetic fields offers a facile and novel way to break through the performance limit of inorganic perovskite CsPbBr3 quantum dots (QDs). Herein, metallic nanoparticles decorated anodic aluminum oxide (AAO) hybrid plasmonic nanostructures with geometric control are first proposed for cyclic light utilization of perovskite photodetectors, enabled by spatially extended light confinement. The drastic multiple interference induced by plasmonic coupling within AAO matrixes are generated as a function of pore sizes, which can effectively collect the transmitted photons back to the surface. In addition, the self-assembled metallic nanoparticles simultaneously concentrate the incident and reflected light beams into the CsPbBr3 QD layers. The light confinement inherently stems from the metallic nanoparticles due to the variation of the near surface electromagnetic fields. As a result, perovskite photodetectors based on Al nanoparticles/AAO hybrid plasmonic nanostructures with a pore size of 220 nm exhibit enhanced photoresponse behavior with remarkably increased photocurrent by ≈43× and maintain low dark current under 490 nm light illumination at 1 V.
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Affiliation(s)
- Ming-Yu Li
- School of Science, Wuhan University of Technology, Wuhan, Hubei, 430070, China
| | - Kai Shen
- Department of Electronic and Electrical Engineering, University College London, London, WC1E 6BT, UK
| | - Hao Xu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China
| | - Aobo Ren
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China
| | - Jihoon Lee
- College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Sundar Kunwar
- College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Sisi Liu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China
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Liang WQ, Li Y, Ma JL, Wang Y, Yan JJ, Chen X, Wu D, Tian YT, Li XJ, Shi ZF. A solution-processed ternary copper halide thin films for air-stable and deep-ultraviolet-sensitive photodetector. NANOSCALE 2020; 12:17213-17221. [PMID: 32804990 DOI: 10.1039/d0nr03630g] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recently, the newly emerging lead-halide perovskites have received tremendous attention in the photodetection field because of their intrinsic large light absorption and high well-balanced carrier transport characteristics. Unfortunately, the issue of instability and the existence of toxic lead cations have greatly restricted their practical applications and future commercialization. Furthermore, the previous studies on perovskite photodetectors mainly operate in visible and near-infrared light region, and there are practically no relevant reports aimed at the deep-ultraviolet (DUV) region. In this study, an air-stable and DUV-sensitive photoconductive detector was demonstrated with a solution-processed ternary copper halides Cs3Cu2I5 thin films as the light absorber. The proposed photodetector is very sensitive to wavelengths of light below 320 nm and unresponsive to the visible light. Because of the high material integrity and large surface coverage of the Cs3Cu2I5 thin films, the detector presents an outstanding photodetection performance with a photoresponsivity of ∼17.8 A W-1, specific detectivity of 1.12 × 1012 Jones, and fast response speed of 465/897 μs, superior to previously reported DUV photodetectors based on other material systems. Unlike traditional lead-halide perovskites, the lead-free Cs3Cu2I5 shows remarkable stability against heat, UV light, and environmental oxygen/moisture. Thus, the unsealed photodetector demonstrates good operation stability for 11 h of continuous running in open air. Even after 80-day storage in ambient air, its photodetection capability can nearly be maintained. The results suggest that non-toxic Cs3Cu2I5 could be a potential candidate for stable and environment friendly DUV detectors, enabling an assembly of optoelectronic systems in the future.
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Affiliation(s)
- Wen-Qing Liang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China.
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Liu D, Yu BB, Liao M, Jin Z, Zhou L, Zhang X, Wang F, He H, Gatti T, He Z. Self-Powered and Broadband Lead-Free Inorganic Perovskite Photodetector with High Stability. ACS APPLIED MATERIALS & INTERFACES 2020; 12:30530-30537. [PMID: 32527083 DOI: 10.1021/acsami.0c05636] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Metal halide perovskite materials have opened up a great opportunity for high-performance optoelectronic devices owing to their extraordinary optoelectronic properties. More than lead halide ones, stable and nontoxic bismuth halide perovskites exhibit more promise in their future commercialization. In this work, we developed for the first time photodetectors based on full-inorganic Cs3Bi2I9-xBrx perovskites and modulate their performance by varying x in the composition systematically. Among those self-powered photodetectors, those based on Cs3Bi2I6Br3 shows the best performance with excellent photosensitivity of 4.1 × 104 at zero bias as well as the responsivity and detectivity reaching 15 mA/W and 4.6 × 1011 Jones, respectively. More strikingly, the full-inorganic perovskite photodetectors exhibit excellent stability in the ambient environment and can maintain over 96% of the initial value after 100 days owing to the high stability of the core perovskite film. The paper definitely paves an alternative and promising strategy for the design of future commercial photodetectors that are self-powered, stable, nontoxic, etc.
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Affiliation(s)
- Di Liu
- Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen 518055, Guangdong, China
- College of Physics and State Key Laboratory of Bio-Fibers and Eco-Textiles, Qingdao University, No. 308 Ningxia Rd., Qingdao 266071, China
| | - Bin-Bin Yu
- Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen 518055, Guangdong, China
- Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
| | - Min Liao
- Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen 518055, Guangdong, China
| | - Zhixin Jin
- Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen 518055, Guangdong, China
| | - Liang Zhou
- Department of Physics, Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen 518055, Guangdong, P. R. China
| | - Xiuxing Zhang
- Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen 518055, Guangdong, China
| | - Fengyun Wang
- College of Physics and State Key Laboratory of Bio-Fibers and Eco-Textiles, Qingdao University, No. 308 Ningxia Rd., Qingdao 266071, China
| | - Hongtao He
- Department of Physics, Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen 518055, Guangdong, P. R. China
| | - Teresa Gatti
- Institute of Physical Chemistry and Center for Materials Research (LaMa), Justus Liebig University, Heinrich Buff Ring 17, 35392 Giessen, Germany
| | - Zhubing He
- Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen 518055, Guangdong, China
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Zhao Y, Li C, Jiang J, Wang B, Shen L. Sensitive and Stable Tin-Lead Hybrid Perovskite Photodetectors Enabled by Double-Sided Surface Passivation for Infrared Upconversion Detection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2001534. [PMID: 32419331 DOI: 10.1002/smll.202001534] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2020] [Revised: 04/07/2020] [Accepted: 04/16/2020] [Indexed: 05/20/2023]
Abstract
Tin(Sn)-based perovskite is currently considered one of the most promising materials due to extending the absorption spectrum and reducing the use of lead (Pb). However, Sn2+ is easily oxidized to Sn4+ in atmosphere, causing more defects and degradation of perovskite materials. Herein, double-sided interface engineering is proposed, that is, Sn-Pb perovskite films are sandwiched between the phenethylammonium iodide (PEAI) in both the bottom and top sides. The larger organic cations of PEA+ are arranged into a perovskite surface lattice to form a 2D capping layer, which can effectively prevent the water and oxygen to destroy bulk perovskite. Meanwhile, the PEA+ can also passivate defects of iodide anions at the bottom of perovskite films, which is always present but rarely considered previously. Compared to one sided passivation, Sn-Pb hybrid perovskite photodetectors contribute a significant enhancement of performance and stability, yielding a broadband response of 300-1050 nm, a low dark current density of 1.25 × 10-3 mA cm-2 at -0.1 V, fast response speed of 35 ns, and stability beyond 240 h. Furthermore, the Sn-Pb broadband photodetectors are integrated in an infrared up-conversion system, converting near-infrared light into visible light. It is believed that a double-sided passivation method can provide new strategies to achieving high-performance perovskite photodetectors.
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Affiliation(s)
- Yan Zhao
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Chenglong Li
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Jizhong Jiang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Boming Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Liang Shen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
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Loi H, Cao J, Guo X, Liu C, Wang N, Song J, Tang G, Zhu Y, Yan F. Gradient 2D/3D Perovskite Films Prepared by Hot-Casting for Sensitive Photodetectors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2000776. [PMID: 32714769 PMCID: PMC7375231 DOI: 10.1002/advs.202000776] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/02/2020] [Revised: 04/09/2020] [Indexed: 05/31/2023]
Abstract
2D Ruddlesden-Popper perovskites have attracted wide attention recently because of tunable optoelectronic properties and have been used as alternatives to their 3D counterparts in various optoelectronic devices. Here, a series of (PEA)2(MA) n -1Pb n I3 n +1 perovskite thin films is designed and fabricated by a convenient hot-casting method to obtain gradient n in the films, which leads to the formation of vertical heterojunctions that can enhance charge separation in the films under light illumination. Based on a single gradient perovskite film, a highly sensitive and stable photodetector with a responsivity up to 149 AW-1 and a specific detectivity of 2 × 1012 Jones is obtained. This work paves a way to realizing high-performance optoelectronic devices with enhanced charge separation by introducing compositional gradient in a perovskite film.
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Affiliation(s)
- Hok‐Leung Loi
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloonHong Kong
| | - Jiupeng Cao
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloonHong Kong
| | - Xuyun Guo
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloonHong Kong
| | - Chun‐Ki Liu
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloonHong Kong
| | - Naixiang Wang
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloonHong Kong
| | - Jiajun Song
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloonHong Kong
| | - Guanqi Tang
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloonHong Kong
| | - Ye Zhu
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloonHong Kong
| | - Feng Yan
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloonHong Kong
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Zhu T, Yang Y, Gong X. Recent Advancements and Challenges for Low-Toxicity Perovskite Materials. ACS APPLIED MATERIALS & INTERFACES 2020; 12:26776-26811. [PMID: 32432455 DOI: 10.1021/acsami.0c02575] [Citation(s) in RCA: 24] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Lead-based organic-inorganic hybrid perovskite materials have been developed for advanced optoelectronic applications. However, the toxicity of lead and the chemical instability of lead-based perovskite materials have so far been demonstrated to be an overwhelming challenge. The discovery of perovskite materials based on low-toxicity elements, such as Sn, Bi, Sb, Ge, and Cu, with superior optoelectronic properties provides alternative approaches to realize high-performance perovskite optoelectronics. In this review, recent advances in the aspects of low-toxicity perovskite solar cells, photodetectors, light-emitting diodes, and thermoelectric devices are highlighted. The antioxidation stability of metal cation and the crystallization process of the low-toxicity perovskite materials are discussed. In the last part, the outlook toward addressing various issues requiring further attention in the development of low-toxicity perovskite materials is outlined.
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Affiliation(s)
- Tao Zhu
- Department of Polymer Engineering, College of Polymer Science and Polymer Engineering, The University of Akron, Akron, Ohio 44325, United States
| | - Yongrui Yang
- Department of Polymer Engineering, College of Polymer Science and Polymer Engineering, The University of Akron, Akron, Ohio 44325, United States
| | - Xiong Gong
- Department of Polymer Engineering, College of Polymer Science and Polymer Engineering, The University of Akron, Akron, Ohio 44325, United States
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42
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Liu CK, Tai Q, Wang N, Tang G, Hu Z, Yan F. Lead-Free Perovskite/Organic Semiconductor Vertical Heterojunction for Highly Sensitive Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:18769-18776. [PMID: 32212606 DOI: 10.1021/acsami.0c01202] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In recent years, photodetectors based on organic-inorganic lead halide perovskites have been studied extensively. However, the inclusion of lead in those materials can cause severe human health and environmental problems, which is undesirable for practical applications. Here, we report high-performance photodetectors with a tin-based perovskite/PEDOT:PSS vertical heterojunction. The device demonstrates a broadband photoresponse from NIR to UV. The maximum responsivity and gain are up to 2.6 × 106 A/W and 4.7 × 106, respectively. Moreover, a much shorter response time and higher detectivity can be achieved by reducing the thickness of PEDOT:PSS. The outstanding performance is due to the excellent optoelectronic properties of the perovskite and the photogating effect originating from the heterojunction. Furthermore, devices fabricated on flexible substrates can demonstrate not only high sensitivity but also excellent bending stability. This work opens up the opportunity of using lead-free perovskite in highly sensitive photodetectors with vertical heterojunctions.
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Affiliation(s)
- Chun-Ki Liu
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon 999077, Hong Kong
| | - Qidong Tai
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon 999077, Hong Kong
| | - Naixiang Wang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon 999077, Hong Kong
| | - Guanqi Tang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon 999077, Hong Kong
| | - Zhao Hu
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon 999077, Hong Kong
| | - Feng Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon 999077, Hong Kong
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Yang L, Li Z, Liu C, Yao X, Li H, Liu X, Liu J, Zhu P, Liu B, Cui T, Sun C, Bao Y. Temperature-Dependent Lasing of CsPbI 3 Triangular Pyramid. J Phys Chem Lett 2019; 10:7056-7061. [PMID: 31665607 DOI: 10.1021/acs.jpclett.9b02703] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In this work, the lasing performance of a microsized single-crystal CsPbI3 triangular pyramid (MSCTP) is evaluated by measuring the lasing threshold at low temperature. The MSCTPs of well-defined facets are synthesized on a Si/SiO2 substrate with chemical vapor deposition. The MSCTP shows a spontaneous emission around 719 nm at room temperature and a stimulated emission resonant in a single Fabry-Perot mode within 148-223 K. The lasing threshold varies from 21.56 to 53.15 μJ/cm2 and presents a temperature dependence in an empirical exponential function with a characteristic temperature of 72.73 K. The temperature dependence of lasing behavior is ascribed to the competition between the exciton binding energy and thermal disturbance energy of CsPbI3. The results of this work provide us a perspective to engineer and optimize optoelectrical devices based on perovskite materials and a microsized optical cavity to investigate the light-matter interaction in quantum optics.
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Affiliation(s)
- Liu Yang
- State Key Laboratory of Superhard Materials & School of Physics , Jilin University , Changchun 130012 , China
| | - Zhongqi Li
- State Key Laboratory of Superhard Materials & School of Physics , Jilin University , Changchun 130012 , China
| | - Chang Liu
- State Key Laboratory of Superhard Materials & School of Physics , Jilin University , Changchun 130012 , China
| | - Xiuru Yao
- State Key Laboratory of Superhard Materials & School of Physics , Jilin University , Changchun 130012 , China
| | - Hongqi Li
- State Key Laboratory of Superhard Materials & School of Physics , Jilin University , Changchun 130012 , China
| | - Xinxia Liu
- State Key Laboratory of Superhard Materials & School of Physics , Jilin University , Changchun 130012 , China
| | - Junsong Liu
- State Key Laboratory of Superhard Materials & School of Physics , Jilin University , Changchun 130012 , China
| | - Pinwen Zhu
- State Key Laboratory of Superhard Materials & School of Physics , Jilin University , Changchun 130012 , China
| | - BingBing Liu
- State Key Laboratory of Superhard Materials & School of Physics , Jilin University , Changchun 130012 , China
| | - Tian Cui
- State Key Laboratory of Superhard Materials & School of Physics , Jilin University , Changchun 130012 , China
| | - Cheng Sun
- Department of Mechanical Engineering , Northwestern University , 2145 Sheridan Road , Evanston , Illinois 60208 , United States
| | - Yongjun Bao
- State Key Laboratory of Superhard Materials & School of Physics , Jilin University , Changchun 130012 , China
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