2D Materials and Heterostructures at Extreme Pressure

Reticular Modulation of Piezofluorochromic Behaviors in Organic Molecular Cages by Replacing Non-Luminous Components

Organic piezochromic materials that manifest pressure-stimuli-responses are important in various fields such as data storage and anticounterfeiting. The manipulation of piezofluorochromic behaviors for these materials is promising but remains a great challenge. Herein, a non-luminous components regulated strategy is developed and organic molecular cages (OMCs), a burgeoning class of crystalline organic materials with structural dynamics, are first explored for the design of piezofluorochromic materials with tunable luminescence. A series of OMCs based on aggregation-induced emission (AIE) chromophores, termed Cage 1-3, are synthesized and their piezofluorochromic behaviors are investigated by diamond anvil cell technique. Due to the sufficient voids between its flexible chromophores offered by the OMC structure, Cage 1 exhibits thermofluorochromic and piezofluorochromic properties. Moreover, the piezofluorochromic performance of this OMC could be further promoted by replacing its non-luminous components with improved flexibilities, and a remarkable luminescence peak shift by 150 nm together with a response sensitivity of 13.8 nm GPa-1 was achieved upon hydrostatic compression. The cage structure plays a vital role in facilitating efficient and reversible piezofluorochromic behaviors. This study has shed light on the rational design and exploitation of OMCs as an exceptional platform to accomplish customizable piezofluorochromic behaviors and enlarge their potential applications in pressure-based luminescence.

Strain Engineering of Twisted Bilayer Graphene: The Rise of Strain-Twistronics

The layer-by-layer stacked van der Waals structures (termed vdW hetero/homostructures) offer a new paradigm for materials design-their physical properties can be tuned by the vertical stacking sequence as well as by adding a mechanical twist, stretch, and hydrostatic pressure to the atomic structure. In particular, simple twisting and stacking of two layers of graphene can form a uniform and ordered Moiré superlattice, which can effectively modulate the electrons of graphene layers and lead to the discovery of unconventional superconductivity and strong correlations. However, the twist angle of twisted bilayer graphene (tBLG) is almost unchangeable once the interlayer stacking is determined, while applying mechanical elastic strain provides an alternative way to deeply regulate the electronic structure by controlling the lattice spacing and symmetry. In this review, diverse experimental advances are introduced in straining tBLG by in-plane and out-of-plane modes, followed by the characterizations and calculations toward quantitatively tuning the strain-engineered electronic structures. It is further discussed that the structural relaxation in strained Moiré superlattice and its influence on electronic structures. Finally, the conclusion entails prospects for opportunities of strained twisted 2D materials, discussions on existing challenges, and an outlook on the intriguing emerging field, namely "strain-twistronics".

Large and Pressure-Dependent c-Axis Piezoresistivity of Highly Oriented Pyrolytic Graphite near Zero Pressure

The c-axis piezoresistivity is a fundamental and important parameter of graphite, but its value near zero pressure has not been well determined. Herein, a new method for studying the c-axis piezoresistivity of van der Waals materials near zero pressure is developed on the basis of in situ scanning electron microscopy and finite element simulation. The c-axis piezoresistivity of microscale highly oriented pyrolytic graphite (HOPG) is found to show a large value of 5.68 × 10-5 kPa-1 near zero pressure and decreases by 2 orders of magnitude to the established value of ∼10-7 kPa-1 when the pressure increases to 200 MPa. By modulating the serial tunneling barrier model on the basis of the stacking faults, we describe the c-axis electrical transport of HOPG under compression. The large c-axis piezoresistivity near zero pressure and its large decrease in magnitude with pressure are attributed to the rapid stiffening of the electromechanical properties under compression.

Swelling of Ti3 C2 Tx MXene in Water and Methanol at Extreme Pressure Conditions

Pressure-induced swelling has been reported earlier for several hydrophilic layered materials. MXene Ti3C2Tx is also a hydrophilic layered material composed by 2D sheets but so far pressure-induced swelling is reported for this material only under conditions of shear stress at MPa pressures. Here, high-pressure experiments are performed with MXenes prepared by two methods known to provide "clay-like" materials. MXene synthesized by etching MAX phase with HCl+LiF demonstrates the effect of pressure-induced swelling at 0.2 GPa with the insertion of additional water layer. The transition is incomplete with two swollen phases (ambient with d(001) = 16.7Å and pressure-induced with d(001) = 19.2Å at 0.2 GPa) co-existing up to the pressure point of water solidification. Therefore, the swelling transition corresponds to change from two-layer water intercalation (2L-phase) to a never previously observed three-layer water intercalation (3L-phase) of MXene. Experiments with MXene prepared by LiCl+HF etching have not revealed pressure-induced swelling in liquid water. Both MXenes also show no anomalous compressibility in liquid methanol. The presence of pressure-induced swelling only in one of the MXenes indicates that the HCl+LiF synthesis method is likely to result in higher abundance of hydrophilic functional groups terminating 2D titanium carbide.

Out-of-plane pressure and electron doping inducing phase and magnetic transitions in GeC/CrS2/GeC van der Waals heterostructure

Out-of-plane pressure and electron doping can affect interlayer interactions in van der Waals materials, modifying their crystal structure and physical and chemical properties. In this study, we used magnetic monolayer 1T/1T'-CrS2 and high symmetry 2D-honeycomb material GeC to construct a GeC/CrS2/GeC triple layered van der Waals heterostructure (vdWH). Based on density functional theory calculations, we found that applying out-of-plane strain and doping with electrons could induce a 1T'-to-1T phase transition and consequently the ferromagnetic (FM)-to-antiferromagnetic (AFM) transition in the CrS2 layer. Such a phase and magnetic transition arises from the pressure and electron-induced interlayer interaction enhancement. The electron doping can effectively decrease the critical compressive stress from ∼4.3 GPa (charge neutrality) to ∼664 MPa (Q = 9 × 10-3 e- per atom) for the FM-to-AFM transition. These properties could be used to fabricate and program the 2D lateral FM/AFM heterostructures for artificial controlled spin texture and miniaturized spintronic devices.

The structural stability of Mn3Sn Heusler compound under high pressure

Pressure engineering has attracted growing interest in the understanding of structural changes and structure-property relations of layered materials. In this study, we investigated the effect of pressure on the crystal structure of Mn3Sn.In-situhigh-pressure x-ray diffraction experiments revealed that Mn3Sn maintained hexagonal lattice symmetry within the pressure range of ambient to 50.4 GPa. The ratio of lattice constantsc/ais almost independent of the pressure and remains constant at 0.80, indicating a stable cell shape. Density functional theory calculations revealed the strong correlation between the crystal structure and the localization ofdelectrons. The Mn3Sn has been found in flat energy bands near the Fermi level, exhibiting a large density of states (DOS) primarily contributed by thedelectrons. This large DOS near the Fermi level increases the energy barrier for a phase transition, making the transition from the hexagonal phase to the tetragonal phase challenging. Our results confirm the structural stability of Mn3Sn under high pressure, which is beneficial to the robustness of spintronic devices.

Imaging Ultrafast Dynamics of Pressure-Driven Phase Transitions in Black Phosphorus and Anomalous Coherent Phonon Softening

Applying high pressure to effectively modulate the electronic and lattice structures of materials could unravel various physical properties associated with phase transitions. In this work, high-pressure-compatible femtosecond pump-probe microscopy was constructed to study the pressure-dependent ultrafast dynamics in black phosphorus (BP) thin films. We observed pressure-driven evolution of the electronic topological transition and three structural phases as the pressure reached ∼22 GPa, which could be clearly differentiated in the transient absorption images containing spatially resolved ultrafast carrier and coherent phonon dynamics. Surprisingly, an anomalous coherent acoustic phonon mode with pressure softening behavior was observed within the range of ∼3-8 GPa, showing distinct laser power and time dependences. Density functional theory calculations show that this mode, identified as the shear mode along the armchair orientation, gains significant electron-phonon coupling strength from out-of-plane compression that leads to decreased phonon frequency. Our results provide insights into the structure evolution of BP with pressure and hold potential for applications in microelectromechanical devices.

Modulating the electronic properties and band alignments of the arsenene/MoSi2N4 van der Waals heterostructure via applying strain and electric field

The two-dimensional (2D) MoSi2N4 monolayer fabricated recently has attracted extensive attention due to its exotic electronic properties and excellent stability for future applications. Using first-principles calculations, we have shown that the electronic properties of the arsenene/MoSi2N4 van der Waals (vdW) heterostructure can be effectively modulated by applying in-plane/vertical strain and vertical electric field. The arsenene/MoSi2N4 vdW heterostructure has type-II band alignment, facilitating the separation of photogenerated electron-hole pairs. The heterostructure is predicted to have an indirect bandgap of about 0.52 eV by using the PBE functional (0.87 eV by using the hybrid functional). Furthermore, under εz = 0.5 Å vertical tensile strain or -0.05 V Å-1 vertical electric field, the arsenene/MoSi2N4 heterostructure can not only experience transition from an indirect to a direct bandgap semiconductor, but also exhibit type-II to type-I band alignment transition. The calculated optical absorption properties reveal that the formation of the vdW heterostructure can effectively enhance the light absorption, and the absorption coefficient in visible and ultraviolet regions is much higher than those of the arsenene and the MoSi2N4 monolayer. Most importantly, based on charge transfer analysis, we proposed the modulation mechanism of the electronic properties of the vdW heterostructure influenced by vertical strain and electric field. Our study provides physical insights into manipulating the electronic and optoelectronic properties of MoSi2N4 based vdW heterostructures, which may be helpful for their practical applications.

Compression-induced hexa-to-tetra phase transition of confined germanene

Via molecular dynamics (MD) simulations we find the existence of the new allotrope of two-dimensional (2D) germanene, i.e. 2D tetra-germanene (tetra-Ge) which contains entirely tetragons. We compress 2D hexa-germanene (hexa-Ge) step by step over a broad density range at constant temperature and hexa-tetra Ge phase transition occurs. We find that the compression of hexa-Ge at 2000 K (not far above the melting point of hexa-Ge) leads to the formation of tetra-Ge with the highest quality. Atomic structure of the obtained tetra-Ge at 300 K is analyzed in details. Although fraction of tetragons in the tetra-Ge is very high (larger than 0.99), some defects are found in addition to the skew tetragons. Due to containing almost entirely tetragons, tetra-Ge may exhibit new behaviors unlike those of the hexa-Ge. Subsequent studies in this direction for 2D tetra-Ge. In addition, first-principles calculations under density functional theory confirm the existence of stable tetra-Ge.

Negative Capacitance Field Effect Transistors based on Van der Waals 2D Materials

Steep subthreshold swing (SS) is a decisive index for low energy consumption devices. However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann Tyranny, which limits the scaling of SS to sub-60 mV dec-1 at room temperature. Ferroelectric gate stack with negative capacitance (NC) is proved to reduce the SS effectively by the amplification of the gate voltage. With the application of 2D ferroelectric materials, the NC FETs can be further improved in performance and downscaled to a smaller dimension as well. This review introduces some related concepts for in-depth understanding of NC FETs, including the NC, internal gate voltage, SS, negative drain-induced barrier lowering, negative differential resistance, single-domain state, and multi-domain state. Meanwhile, this work summarizes the recent advances of the 2D NC FETs. Moreover, the electrical characteristics of some high-performance NC FETs are expressed as well. The factors which affect the performance of the 2D NC FETs are also presented in this paper. Finally, this work gives a brief summary and outlook for the 2D NC FETs.

Tuning and exploiting interlayer coupling in two-dimensional van der Waals heterostructures

Two-dimensional (2D) layered materials can stack into new material systems, with van der Waals (vdW) interaction between the adjacent constituent layers. This stacking process of 2D atomic layers creates a new degree of freedom-interlayer interface between two adjacent layers-that can be independently studied and tuned from the intralayer degree of freedom. In such heterostructures (HSs), the physical properties are largely determined by the vdW interaction between the individual layers,i.e.interlayer coupling, which can be effectively tuned by a number of means. In this review, we summarize and discuss a number of such approaches, including stacking order, electric field, intercalation, and pressure, with both their experimental demonstrations and theoretical predictions. A comprehensive overview of the modulation on structural, optical, electrical, and magnetic properties by these four approaches are also presented. We conclude this review by discussing several prospective research directions in 2D HSs field, including fundamental physics study, property tuning techniques, and future applications.

Phase Engineering of 2D Materials

Polymorphic 2D materials allow structural and electronic phase engineering, which can be used to realize energy-efficient, cost-effective, and scalable device applications. The phase engineering covers not only conventional structural and metal-insulator transitions but also magnetic states, strongly correlated band structures, and topological phases in rich 2D materials. The methods used for the local phase engineering of 2D materials include various optical, geometrical, and chemical processes as well as traditional thermodynamic approaches. In this Review, we survey the precise manipulation of local phases and phase patterning of 2D materials, particularly with ideal and versatile phase interfaces for electronic and energy device applications. Polymorphic 2D materials and diverse quantum materials with their layered, vertical, and lateral geometries are discussed with an emphasis on the role and use of their phase interfaces. Various phase interfaces have demonstrated superior and unique performance in electronic and energy devices. The phase patterning leads to novel homo- and heterojunction structures of 2D materials with low-dimensional phase boundaries, which highlights their potential for technological breakthroughs in future electronic, quantum, and energy devices. Accordingly, we encourage researchers to investigate and exploit phase patterning in emerging 2D materials.

Thermodynamic Origins of Structural Metastability in Two-Dimensional Black Arsenic

Two-dimensional (2D) materials have aroused considerable research interest owing to their potential applications in nanoelectronics and optoelectronics. Thermodynamic stability of 2D structures inevitably affects the performance and power consumption of the fabricated nanodevices. Black arsenic (b-As), as a cousin of black phosphorus, has presented extremely high anisotropy in physical properties. However, systematic research on structural stability of b-As is still lacking. Herein, we demonstrated the detailed analysis on structural metastability of the natural b-As, and determined its existence conditions in terms of two essential thermodynamic variables, hydrostatic pressure and temperature. Our results confirmed that b-As can survive only below 0.7 GPa, and then irreversibly transforms to gray arsenic, consistent with our theoretical calculations. Furthermore, a thermal annealing strategy was developed to precisely control the thickness of the b-As flake, and it sublimates at 300 °C. These results could pave the way for 2D b-As in many promising applications.

Pressure-Induced Structural Phase Transition and Enhanced Interlayer Coupling in Two-Dimensional Ferromagnet CrSiTe3

The two-dimensional van der Waals ferromagnetic semiconductor CrSiTe₃ has attracted growing interest as an intrinsic topological magnet. Both superconductivity and enhancement of ferromagnetism, usually competing for orders, have been observed in CrSiTe₃ at high pressure. However, the high-pressure structure of CrSiTe₃ is still unclear, setting obstacles in understanding pressure-induced novel physics. Here, combining the Raman spectra and first-principles calculations, the structure of CrSiTe₃ at high pressure has been clarified. The interlayer breathing mode located at ∼42.1 cm^-1 has been observed for the first time in CrSiTe₃ by ultralow-frequency Raman spectroscopy at high pressure. Theoretical calculations confirm a phase transition from the R3̅ phase to the R3 phase accompanying noticeable enhancement of the Curie temperature. Our results highlight ultralow-frequency Raman spectroscopy combined with high pressure for detecting and modulating the structure and interlayer coupling of two-dimensional materials.

Magnetic detection under high pressures using designed silicon vacancy centres in silicon carbide

Pressure-induced magnetic phase transitions are attracting interest as a means to detect superconducting behaviour at high pressures in diamond anvil cells, but determining the local magnetic properties of samples is a challenge due to the small volumes of sample chambers. Optically detected magnetic resonance of nitrogen vacancy centres in diamond has recently been used for the in situ detection of pressure-induced phase transitions. However, owing to their four orientation axes and temperature-dependent zero-field splitting, interpreting these optically detected magnetic resonance spectra remains challenging. Here we study the optical and spin properties of implanted silicon vacancy defects in 4H-silicon carbide that exhibit single-axis and temperature-independent zero-field splitting. Using this technique, we observe the magnetic phase transition of Nd2Fe14B at about 7 GPa and map the critical temperature-pressure phase diagram of the superconductor YBa2Cu3O6.6. These results highlight the potential of silicon vacancy-based quantum sensors for in situ magnetic detection at high pressures.

Tunable Electronic Properties of Two-Dimensional GaSe1-xTex Alloys

In this work, we performed a theoretical study on the electronic properties of monolayer GaSe1-xTex alloys using the first-principles calculations. The substitution of Se by Te results in the modification of a geometric structure, charge redistribution, and bandgap variation. These remarkable effects originate from the complex orbital hybridizations. We demonstrate that the energy bands, the spatial charge density, and the projected density of states (PDOS) of this alloy are strongly dependent on the substituted Te concentration.

Giant Tunability of Charge Transport in 2D Inorganic Molecular Crystals by Pressure Engineering

The unique intermolecular van der Waals force in emerging two-dimensional inorganic molecular crystals (2DIMCs) endows them with highly tunable structures and properties upon applying external stimuli. Using high pressure to modulate the intermolecular bonding, here we reveal the highly tunable charge transport behavior in 2DIMCs for the first time, from an insulator to a semiconductor. As pressure increases, 2D α-Sb₂ O₃ molecular crystal undergoes three isostructural transitions, and the intermolecular bonding enhances gradually, which results in a considerably decreased band gap by 25 % and a greatly enhanced charge transport. Impressively, the in situ resistivity measurement of the α-Sb₂ O₃ flake shows a sharp drop by 5 orders of magnitude in 0-3.2 GPa. This work sheds new light on the manipulation of charge transport in 2DIMCs and is of great significance for promoting the fundamental understanding and potential applications of 2DIMCs in advanced modern technologies.

Tunable Schottky and ohmic contacts in the Ti2NF2/α-Te van der Waals heterostructure

Two dimensional α-Te holds great promise in optoelectronic devices because of its high mobility and excellent environmental stability. In this study, the electronic structures and interfacial contact characteristics of the Ti₂NF₂/α-Te van der Waals heterostructure are investigated by means of first-principles calculations. It is found that p-type Schottky contacts with a Schottky barrier (SB) of 0.21 eV are formed at the Ti₂NF₂/α-Te interface. By applying external electric fields or controlling the interlayer coupling between the Ti₂NF₂ and α-Te monolayers, the SB height can be effectively tuned, and all the n-type Schottky, p-type Schottky, n-type ohmic and p-type ohmic contacts can be achieved. Such an extremely high tunability is further found to be closely associated with the charge transfer at the interface, as well as the interface dipole and the potential step. Our results provide an avenue for the design of future α-Te-based electronic devices with high performance.

Opportunities and challenges for 2D heterostructures in battery applications: a computational perspective

With an increasing demand for large-scale energy storage systems, there is a need for novel electrode materials to store energy in batteries efficiently. 2D materials are promising as electrode materials for battery applications. Despite their excellent properties, none of the available single-phase 2D materials offers a combination of properties required for maximizing energy density, power density, and cycle life. This article discusses how stacking distinct 2D materials into a 2D heterostructure may open up new possibilities for battery electrodes, combining favourable characteristics and overcoming the drawbacks of constituent 2D layers. Computational studies are crucial to advancing this field rapidly with first-principles simulations of various 2D heterostructures forming the basis for such investigations that offer insights into processes that are hard to determine otherwise. We present a perspective on the current methodology, along with a review of the known 2D heterostructures as anodes and their potential for Li and Na-ion battery applications. 2D heterostructures showcase excellent tunability with different compositions. However, each of them has distinct properties, with its own set of challenges and opportunities for application in batteries. We highlight the current status and prospects to stimulate research into designing new 2D heterostructures for battery applications.

Recent Advances on Tuning the Interlayer Coupling and Properties in van der Waals Heterostructures

2D van der Waals (vdW) heterostructures are receiving increasing research attention due to the theoretically amazing properties and unprecedented application potential. However, the as-synthesized heterostructures are generally underperforming due to the weak interlayer coupling, which inspires the researchers to find ways to modulate the interlayer coupling and properties, realizing the tailored performance for actual applications. There have been a lot of publications regarding the controllable regulation of the structures and properties of 2D vdW heterostructures in the past few years, while a review work summarizing the current advances is not yet available, though it is significant. This paper conducts a state-of-the-art review regarding the current research progress of performance modulation of vdW heterostructures by different techniques. First, the general synthesis methods of vdW heterostructures are summarized. Then, different performance modulation techniques, that is, mechanical-based, external fields-assisted, and particle beam irradiation-based methods, are discussed and compared in detail. Some of the newly proposed concepts are described. Thereafter, applications of vdW heterostructures with tailored properties are reviewed for the application prospects of the topic around this area. Moreover, the future research challenges and prospects are discussed, aiming at triggering more research interest and device applications around this topic.

Controlled Localized Phase Transition of Selenium for Color-Selective Photodetectors

Color-selective photodetectors are widely applied in several fields; however, they suffer from complex fabrication and low resolution. Herein, we propose a simple and convenient design to achieve a logical color-selective heterojunction photodetector composed of CdS and Se with a crystalline/amorphous mixed state. The as-deposited amorphous Se top layer in the heterojunction is partly transformed to trigonal crystalline Se by localized in situ phase transformation during annealing. As these two heterojunctions have different photoresponses under the same wavelength, the integrated device can accurately identify red, green, and blue light via logical judgment. Finally, the device exhibits high recognition ability in actual tests. This work provides a potential development of high-resolution color-selective photodetectors for visible light communication and logical photoelectric devices.

Band offset engineering at C2N/MSe2 (M = Mo, W) interfaces

Stacking layered two-dimensional materials in a type-II band alignment block has provided a high-performance method in photocatalytic water-splitting technology. The key parameters in such heterostructure configurations are the valence and conduction band offsets at the interface, which determine the device performance. Here, based on density functional theory calculations, the bandgap and band offsets at C₂N/MSe₂ (M = Mo, W) interfaces have been engineered. The main findings demonstrate that the C₂N monolayer interacts with both MoSe₂ and WSe₂ monolayers through weak van der Waals interactions. These heterostructures possess a narrower indirect bandgap and a typical type-II heterostructure feature, being suitable for promoting the separation of photogenerated electron–hole pairs. The calculated Gibbs free energy of hydrogen adsorption demonstrates a reduction in the overpotential, towards the hydrogen evolution reaction, upon forming heterostructures. To further tune the bandgap values and band offsets of heterostructures, the external perturbations are included through a vertical strain and finite electric field. It is found that both the vertical strain and electric field strongly modulate the bandgap values and the magnitude of the band offsets, while the typical type-II band alignment remains preserved. It is noticeable that the band offset magnitudes of the C₂N/MoSe₂ and C₂N/WSe₂ heterostructures are more sensitive to an external electric field than to a vertical interlayer strain.

Stacking layered two-dimensional materials in a type-II band alignment block has provided a high-performance method in photocatalytic water-splitting technology.

MXene/Carbon Nanotube Hybrids: Synthesis, Structures, Properties, and Applications

Since the successful preparation of few-layer transition metal carbides from three-dimensional MAX phases in 2011, MXenes (known as a family of layered transition metal carbides, nitrides, and carbonitrides) have been intensively studied. Though MXenes have been adopted as active materials in many applications, issues including aggregation and restacking are likely to hamper their potential applications. In order to address these prevailing challenges, the concept of MXene/carbon nanotube (CNT) hybrids was proposed initially in 2015, where CNTs were incorporated as the spacers and conductive additives. Ever since, MXene/CNT hybrids with different architectures have been synthesized by a number of methods and applied in numerous fields. Herein, after the discussion about general synthesis approaches, architectures, and properties of the hybrids, this Review summarized the recent advances in the application of MXene/CNT hybrids in energy storage devices, sensors, electrocatalysis, electromagnetic interference shielding, and water treatment, in which the function of individual components was clarified. In the end, the current research trend in this field were discussed and several technical issues were highlighted along with some suggestions on future research directions.

Recent Developments in van der Waals Antiferromagnetic 2D Materials: Synthesis, Characterization, and Device Implementation

Magnetism in two dimensions is one of the most intriguing and alluring phenomena in condensed matter physics. Atomically thin 2D materials have emerged as a promising platform for exploring magnetic properties, leading to the development of essential technologies such as supercomputing and data storage. Arising from spin and charge dynamics in elementary particles, magnetism has also unraveled promising advances in spintronic devices and spin-dependent optoelectronics and photonics. Recently, antiferromagnetism in 2D materials has received extensive attention, leading to significant advances in their understanding and emerging applications; such materials have zero net magnetic moment yet are internally magnetic. Several theoretical and experimental approaches have been proposed to probe, characterize, and modulate the magnetic states efficiently in such systems. This Review presents the latest developments and current status for tuning the magnetic properties in distinct 2D van der Waals antiferromagnets. Various state-of-the-art optical techniques deployed to investigate magnetic textures and dynamics are discussed. Furthermore, device concepts based on antiferromagnetic spintronics are scrutinized. We conclude with remarks on related challenges and technological outlook in this rapidly expanding field.

Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus

Through infrared spectroscopy, we systematically study the pressure effect on electronic structures of few-layer black phosphorus (BP) with layer number ranging from 2 to 13. We reveal that the pressure-induced shift of optical transitions exhibits strong layer dependence. In sharp contrast to the bulk counterpart which undergoes a semiconductor to semimetal transition under ∼1.8  GPa, the band gap of 2 L increases with increasing pressure until beyond 2 GPa. Meanwhile, for a sample with a given layer number, the pressure-induced shift also differs for transitions with different indices. Through the tight-binding model in conjunction with a Morse potential for the interlayer coupling, this layer- and transition-index-dependent pressure effect can be fully accounted. Our study paves a way for versatile van der Waals engineering of two-dimensional BP.

Pressure-Enhanced Ferromagnetism in Layered CrSiTe3 Flakes

Despite recent advances in layered ferromagnets, ferromagnetic interactions in these materials are rather weak. Here, we report pressure-enhanced ferromagnetism in layered CrSiTe₃ flakes revealed by high-pressure magnetic circular dichroism measurements. Below ∼3 GPa, CrSiTe₃ undergoes a paramagnetic-to-ferromagnetic phase transition at ∼32 K, and the field-induced spin-flip in the ferromagnetic phase produces nearly zero hysteresis loops, demonstrating soft ferromagnetism. Above ∼4 GPa, a soft-to-hard ferromagnetic transition occurs, signaled by rectangular-shaped hysteresis loops with finite coercivity and remanent magnetization. Interestingly, as pressure increases, the Curie temperature and coercivity dramatically increase up to ∼138 K and 0.17 T at 7.8 GPa, respectively, in contrast to ∼36 K and 0.02 T at 4.6 GPa. It indicates a remarkable influence of pressure on exchange interactions, which is consistent with DFT calculations. The effective interaction between magnetic couplings and external pressure offers new opportunities in pursuit of high-temperature layered ferromagnets.

Electrically tunable band gap in strained h-BN/silicene van der Waals heterostructures

Single layers of hexagonal boron nitride (h-BN) and silicene are brought together to form h-BN/silicene van der Waals (vdW) heterostructures. The effects of external electric fields and compressive strain on their structural and electronic properties are systematically studied through first principles calculations. Two silicene phases are considered: the low-buckled Si(LB) and the dumbbell-like Si(DB). They show exciting new properties as compared to the isolated layers, such as a tunable band gap that depends on the interlayer distance and is dictated by the charge transfer and orbital hybridization between h-BN and silicene, especially in the case of Si(LB). The electric field also increases the band gap in h-BN/Si(DB) and causes an asymmetric charge rearrangement in h-BN/Si(LB). Remarkably, we found a great potential of h-BN layers to function as substrates for silicene, enhancing both the strain and electric field effects on its electronic properties. These results contribute to a more detailed understanding of h-BN/Si 2D-based materials, highlighting promising possibilities in low-dimensional electronics.

Tuning the Direct and Indirect Excitonic Transitions of h-BN by Hydrostatic Pressure

The pressure dependence of the direct and indirect bandgap transitions of hexagonal boron nitride is investigated using optical reflectance under hydrostatic pressure in an anvil cell with sapphire windows up to 2.5 GPa. Features in the reflectance spectra associated with the absorption at the direct and indirect bandgap transitions are found to downshift with increasing pressure, with pressure coefficients of -26 ± 2 and -36 ± 2 meV GPa^-1, respectively. The GW calculations yield a faster decrease of the direct bandgap with pressure compared to the indirect bandgap. Including the strong excitonic effects through the Bethe-Salpeter equation, the direct excitonic transition is found to have a much lower pressure coefficient than the indirect excitonic transition. This suggests a strong variation of the binding energy of the direct exciton with pressure. The experiments corroborate the theoretical predictions and indicate an enhancement of the indirect nature of the bulk hexagonal boron nitride crystal under hydrostatic pressure.

Na3Bi(IO3)6: An Alkali-Metal Bismuth Iodate with Intriguing One-Dimensional [BiI6O18] Chains and Pressure-Induced Structural Transition

An alkali-metal bismuth iodate, Na₃Bi(IO₃)₆, was successfully obtained by the hydrothermal method for the first time and contains intriguing one-dimensional [BiI₆O₁₈] chains. High-pressure Raman spectra were carried out to investigate the structural transition of Na₃Bi(IO₃)₆. Electronic states and anisotropic optical responses were also investigated by theoretical calculations.