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Mu L, Xing Q, Mou Y, Ma J, Wang C, Zhang J, Ma Y, Lei Y, Xie Y, Yu B, Pan C, Huang S, Yan H. Highly Tunable Interlayer Coupling and Electronic Structures of Few-Layer Graphene with Pressure. NANO LETTERS 2024. [PMID: 39259167 DOI: 10.1021/acs.nanolett.4c02035] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/12/2024]
Abstract
The interlayer electronic coupling is responsible for the electronic structure evolution from monolayer graphene to graphite and for the moiré potential in twisted bilayer graphene. Here we demonstrate that the interlayer transfer integral (hopping parameter) increases nearly 40% with a quite moderate pressure of ∼3.5 GPa, manifested by the resonance peak shift in the infrared spectra of all 2-10 L graphene. A simple model based on the Morse potential enabled us to establish the relationship between the transfer integral and pressure. Our work provides fundamental insights into the dependence of the electronic coupling on the interlayer distance.
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Affiliation(s)
- Lei Mu
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), Shanghai Key Laboratory of Metasurfaces for Light Manipulation and Department of Physics, Fudan University, Shanghai 200433, China
| | - Qiaoxia Xing
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), Shanghai Key Laboratory of Metasurfaces for Light Manipulation and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yanlin Mou
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), Shanghai Key Laboratory of Metasurfaces for Light Manipulation and Department of Physics, Fudan University, Shanghai 200433, China
| | - Junwei Ma
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), Shanghai Key Laboratory of Metasurfaces for Light Manipulation and Department of Physics, Fudan University, Shanghai 200433, China
| | - Chong Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Jiasheng Zhang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), Shanghai Key Laboratory of Metasurfaces for Light Manipulation and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yixuan Ma
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), Shanghai Key Laboratory of Metasurfaces for Light Manipulation and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yuchen Lei
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), Shanghai Key Laboratory of Metasurfaces for Light Manipulation and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yuangang Xie
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), Shanghai Key Laboratory of Metasurfaces for Light Manipulation and Department of Physics, Fudan University, Shanghai 200433, China
| | - Boyang Yu
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), Shanghai Key Laboratory of Metasurfaces for Light Manipulation and Department of Physics, Fudan University, Shanghai 200433, China
| | - Chenghao Pan
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), Shanghai Key Laboratory of Metasurfaces for Light Manipulation and Department of Physics, Fudan University, Shanghai 200433, China
| | - Shenyang Huang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), Shanghai Key Laboratory of Metasurfaces for Light Manipulation and Department of Physics, Fudan University, Shanghai 200433, China
- Institute of Optoelectronics, Fudan University, Shanghai 200433, China
| | - Hugen Yan
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), Shanghai Key Laboratory of Metasurfaces for Light Manipulation and Department of Physics, Fudan University, Shanghai 200433, China
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2
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Zhong W, Zhang H, Karaca E, Zhou J, Kawaguchi S, Kadobayashi H, Yu X, Errandonea D, Yue B, Hong F. Pressure-Sensitive Multiple Superconducting Phases and Their Structural Origin in Van der Waals HfS_{2} Up to 160 GPa. PHYSICAL REVIEW LETTERS 2024; 133:066001. [PMID: 39178430 DOI: 10.1103/physrevlett.133.066001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2024] [Revised: 06/25/2024] [Accepted: 07/03/2024] [Indexed: 08/25/2024]
Abstract
Superconductivity has been observed in many insulating transition metal dichalcogenides (TMDCs) under pressure. However, the origin of superconductivity remains elusive due to the lack of studies on their structures at low temperatures. Here, we report the observation of a high-T_{c} superconducting state (SC-I phase) coexisting with other superconducting states in a compressed 1T-HfS_{2} crystal up to approximately 160 GPa. In situ synchrotron x-ray diffraction results exclude the presence of decomposed sulfur and confirm two structural phase transitions at room temperature, as well as an additional transition at low temperature, which contribute to the emergence of multiple superconducting states. The SC-I phase exhibits an unsaturated T_{c} of 16.4 K at 158 GPa, and demonstrates the highest upper critical field among the bulk TMDCs, μ_{0}H_{c2}(0)≈29.7 T for a T_{c}∼15.2 K at 147 GPa, exceeding the weak-coupling Pauli limit. These results reveal abundant SC properties together with sensitive structures in compressed HfS_{2}, and thereby extend our understanding on TMDCs' superconductivity.
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Affiliation(s)
| | | | | | | | | | | | - Xiaohui Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | | | | | - Fang Hong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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3
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Li Y, Wang K, Feng R, Wang J, Xi XJ, Lang F, Li Q, Li W, Zou B, Pang J, Bu XH. Reticular Modulation of Piezofluorochromic Behaviors in Organic Molecular Cages by Replacing Non-Luminous Components. Angew Chem Int Ed Engl 2024; 63:e202403646. [PMID: 38494740 DOI: 10.1002/anie.202403646] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/21/2024] [Revised: 03/12/2024] [Accepted: 03/13/2024] [Indexed: 03/19/2024]
Abstract
Organic piezochromic materials that manifest pressure-stimuli-responses are important in various fields such as data storage and anticounterfeiting. The manipulation of piezofluorochromic behaviors for these materials is promising but remains a great challenge. Herein, a non-luminous components regulated strategy is developed and organic molecular cages (OMCs), a burgeoning class of crystalline organic materials with structural dynamics, are first explored for the design of piezofluorochromic materials with tunable luminescence. A series of OMCs based on aggregation-induced emission (AIE) chromophores, termed Cage 1-3, are synthesized and their piezofluorochromic behaviors are investigated by diamond anvil cell technique. Due to the sufficient voids between its flexible chromophores offered by the OMC structure, Cage 1 exhibits thermofluorochromic and piezofluorochromic properties. Moreover, the piezofluorochromic performance of this OMC could be further promoted by replacing its non-luminous components with improved flexibilities, and a remarkable luminescence peak shift by 150 nm together with a response sensitivity of 13.8 nm GPa-1 was achieved upon hydrostatic compression. The cage structure plays a vital role in facilitating efficient and reversible piezofluorochromic behaviors. This study has shed light on the rational design and exploitation of OMCs as an exceptional platform to accomplish customizable piezofluorochromic behaviors and enlarge their potential applications in pressure-based luminescence.
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Affiliation(s)
- Yang Li
- School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, TKL of Metal and Molecule-Based Material Chemistry, Collaborative Innovation Center of Chemical Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002 Fujian, China
| | - Kai Wang
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, P. R. China
| | - Rui Feng
- School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, TKL of Metal and Molecule-Based Material Chemistry, Collaborative Innovation Center of Chemical Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Jingtian Wang
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, P. R. China
| | - Xiao-Juan Xi
- State Key Laboratory of Elemento-Organic Chemistry, College of Chemistry, Nankai University, Tianjin, 300071, P. R. China
| | - Feifan Lang
- School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, TKL of Metal and Molecule-Based Material Chemistry, Collaborative Innovation Center of Chemical Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Quanwen Li
- School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, TKL of Metal and Molecule-Based Material Chemistry, Collaborative Innovation Center of Chemical Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Wei Li
- School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, TKL of Metal and Molecule-Based Material Chemistry, Collaborative Innovation Center of Chemical Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Bo Zou
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, P. R. China
| | - Jiandong Pang
- School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, TKL of Metal and Molecule-Based Material Chemistry, Collaborative Innovation Center of Chemical Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Xian-He Bu
- School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, TKL of Metal and Molecule-Based Material Chemistry, Collaborative Innovation Center of Chemical Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
- State Key Laboratory of Elemento-Organic Chemistry, College of Chemistry, Nankai University, Tianjin, 300071, P. R. China
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4
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Hou Y, Zhou J, Xue M, Yu M, Han Y, Zhang Z, Lu Y. Strain Engineering of Twisted Bilayer Graphene: The Rise of Strain-Twistronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2311185. [PMID: 38616775 DOI: 10.1002/smll.202311185] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2023] [Revised: 03/24/2024] [Indexed: 04/16/2024]
Abstract
The layer-by-layer stacked van der Waals structures (termed vdW hetero/homostructures) offer a new paradigm for materials design-their physical properties can be tuned by the vertical stacking sequence as well as by adding a mechanical twist, stretch, and hydrostatic pressure to the atomic structure. In particular, simple twisting and stacking of two layers of graphene can form a uniform and ordered Moiré superlattice, which can effectively modulate the electrons of graphene layers and lead to the discovery of unconventional superconductivity and strong correlations. However, the twist angle of twisted bilayer graphene (tBLG) is almost unchangeable once the interlayer stacking is determined, while applying mechanical elastic strain provides an alternative way to deeply regulate the electronic structure by controlling the lattice spacing and symmetry. In this review, diverse experimental advances are introduced in straining tBLG by in-plane and out-of-plane modes, followed by the characterizations and calculations toward quantitatively tuning the strain-engineered electronic structures. It is further discussed that the structural relaxation in strained Moiré superlattice and its influence on electronic structures. Finally, the conclusion entails prospects for opportunities of strained twisted 2D materials, discussions on existing challenges, and an outlook on the intriguing emerging field, namely "strain-twistronics".
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Affiliation(s)
- Yuan Hou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Jingzhuo Zhou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Minmin Xue
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Maolin Yu
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Ying Han
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Zhuhua Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Yang Lu
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, Hong Kong SAR, 999077, China
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5
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Wang B, Li J, Fang Z, Jiang Y, Li S, Zhan F, Dai Z, Chen Q, Wei X. Large and Pressure-Dependent c-Axis Piezoresistivity of Highly Oriented Pyrolytic Graphite near Zero Pressure. NANO LETTERS 2024. [PMID: 38525903 DOI: 10.1021/acs.nanolett.4c00687] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/26/2024]
Abstract
The c-axis piezoresistivity is a fundamental and important parameter of graphite, but its value near zero pressure has not been well determined. Herein, a new method for studying the c-axis piezoresistivity of van der Waals materials near zero pressure is developed on the basis of in situ scanning electron microscopy and finite element simulation. The c-axis piezoresistivity of microscale highly oriented pyrolytic graphite (HOPG) is found to show a large value of 5.68 × 10-5 kPa-1 near zero pressure and decreases by 2 orders of magnitude to the established value of ∼10-7 kPa-1 when the pressure increases to 200 MPa. By modulating the serial tunneling barrier model on the basis of the stacking faults, we describe the c-axis electrical transport of HOPG under compression. The large c-axis piezoresistivity near zero pressure and its large decrease in magnitude with pressure are attributed to the rapid stiffening of the electromechanical properties under compression.
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Affiliation(s)
- Bingjie Wang
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
| | - Juyao Li
- Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871, China
| | - Zheng Fang
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
| | - Yifan Jiang
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
| | - Shuo Li
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
| | - Fangyuan Zhan
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
| | - Zhaohe Dai
- Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871, China
| | - Qing Chen
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
| | - Xianlong Wei
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
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6
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Iakunkov A, Lienert U, Sun J, Talyzin AV. Swelling of Ti 3 C 2 T x MXene in Water and Methanol at Extreme Pressure Conditions. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2307067. [PMID: 38095537 PMCID: PMC10916643 DOI: 10.1002/advs.202307067] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2023] [Revised: 12/05/2023] [Indexed: 03/07/2024]
Abstract
Pressure-induced swelling has been reported earlier for several hydrophilic layered materials. MXene Ti3C2Tx is also a hydrophilic layered material composed by 2D sheets but so far pressure-induced swelling is reported for this material only under conditions of shear stress at MPa pressures. Here, high-pressure experiments are performed with MXenes prepared by two methods known to provide "clay-like" materials. MXene synthesized by etching MAX phase with HCl+LiF demonstrates the effect of pressure-induced swelling at 0.2 GPa with the insertion of additional water layer. The transition is incomplete with two swollen phases (ambient with d(001) = 16.7Å and pressure-induced with d(001) = 19.2Å at 0.2 GPa) co-existing up to the pressure point of water solidification. Therefore, the swelling transition corresponds to change from two-layer water intercalation (2L-phase) to a never previously observed three-layer water intercalation (3L-phase) of MXene. Experiments with MXene prepared by LiCl+HF etching have not revealed pressure-induced swelling in liquid water. Both MXenes also show no anomalous compressibility in liquid methanol. The presence of pressure-induced swelling only in one of the MXenes indicates that the HCl+LiF synthesis method is likely to result in higher abundance of hydrophilic functional groups terminating 2D titanium carbide.
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Affiliation(s)
| | | | - Jinhua Sun
- Department of Industrial and Materials ScienceChalmers University of TechnologyGöteborgSE‐412 96Sweden
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7
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Chen K, Yan X, Deng J, Bo C, Song M, Kan D, He J, Huo W, Liu JZ. Out-of-plane pressure and electron doping inducing phase and magnetic transitions in GeC/CrS 2/GeC van der Waals heterostructure. NANOSCALE 2024; 16:3693-3700. [PMID: 38288860 DOI: 10.1039/d3nr05610d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/16/2024]
Abstract
Out-of-plane pressure and electron doping can affect interlayer interactions in van der Waals materials, modifying their crystal structure and physical and chemical properties. In this study, we used magnetic monolayer 1T/1T'-CrS2 and high symmetry 2D-honeycomb material GeC to construct a GeC/CrS2/GeC triple layered van der Waals heterostructure (vdWH). Based on density functional theory calculations, we found that applying out-of-plane strain and doping with electrons could induce a 1T'-to-1T phase transition and consequently the ferromagnetic (FM)-to-antiferromagnetic (AFM) transition in the CrS2 layer. Such a phase and magnetic transition arises from the pressure and electron-induced interlayer interaction enhancement. The electron doping can effectively decrease the critical compressive stress from ∼4.3 GPa (charge neutrality) to ∼664 MPa (Q = 9 × 10-3 e- per atom) for the FM-to-AFM transition. These properties could be used to fabricate and program the 2D lateral FM/AFM heterostructures for artificial controlled spin texture and miniaturized spintronic devices.
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Affiliation(s)
- Kaiyun Chen
- Advanced Materials Research Central, Northwest Institute for Nonferrous Metal Research, Xi'an 710016, China
| | - Xue Yan
- Department of Mechanical Engineering, The University of Melbourne, Parkville, VIC 3010, Australia.
| | - Junkai Deng
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Cunle Bo
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Mengshan Song
- Advanced Materials Research Central, Northwest Institute for Nonferrous Metal Research, Xi'an 710016, China
| | - Dongxiao Kan
- Advanced Materials Research Central, Northwest Institute for Nonferrous Metal Research, Xi'an 710016, China
| | - Jiabei He
- Advanced Materials Research Central, Northwest Institute for Nonferrous Metal Research, Xi'an 710016, China
| | - Wangtu Huo
- Advanced Materials Research Central, Northwest Institute for Nonferrous Metal Research, Xi'an 710016, China
| | - Jefferson Zhe Liu
- Department of Mechanical Engineering, The University of Melbourne, Parkville, VIC 3010, Australia.
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8
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Zhang J, Lu Y, Li Y. The structural stability of Mn 3Sn Heusler compound under high pressure. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:195403. [PMID: 38306715 DOI: 10.1088/1361-648x/ad2587] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2023] [Accepted: 02/02/2024] [Indexed: 02/04/2024]
Abstract
Pressure engineering has attracted growing interest in the understanding of structural changes and structure-property relations of layered materials. In this study, we investigated the effect of pressure on the crystal structure of Mn3Sn.In-situhigh-pressure x-ray diffraction experiments revealed that Mn3Sn maintained hexagonal lattice symmetry within the pressure range of ambient to 50.4 GPa. The ratio of lattice constantsc/ais almost independent of the pressure and remains constant at 0.80, indicating a stable cell shape. Density functional theory calculations revealed the strong correlation between the crystal structure and the localization ofdelectrons. The Mn3Sn has been found in flat energy bands near the Fermi level, exhibiting a large density of states (DOS) primarily contributed by thedelectrons. This large DOS near the Fermi level increases the energy barrier for a phase transition, making the transition from the hexagonal phase to the tetragonal phase challenging. Our results confirm the structural stability of Mn3Sn under high pressure, which is beneficial to the robustness of spintronic devices.
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Affiliation(s)
- Junran Zhang
- Research Institute of Fudan University in Ningbo, 901-C1, Binhan Road No. 2, Ningbo Hangzhouwan District, Zhejiang 315336, People's Republic of China
- Academy for Engineering & Technology, Fudan University, 220 Handan Road, Shanghai 200433, People's Republic of China
| | - Yunhao Lu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Yanchun Li
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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9
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Wu S, Chu W, Lu Y, Ji M. Imaging Ultrafast Dynamics of Pressure-Driven Phase Transitions in Black Phosphorus and Anomalous Coherent Phonon Softening. NANO LETTERS 2024; 24:424-432. [PMID: 38153402 DOI: 10.1021/acs.nanolett.3c04218] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/29/2023]
Abstract
Applying high pressure to effectively modulate the electronic and lattice structures of materials could unravel various physical properties associated with phase transitions. In this work, high-pressure-compatible femtosecond pump-probe microscopy was constructed to study the pressure-dependent ultrafast dynamics in black phosphorus (BP) thin films. We observed pressure-driven evolution of the electronic topological transition and three structural phases as the pressure reached ∼22 GPa, which could be clearly differentiated in the transient absorption images containing spatially resolved ultrafast carrier and coherent phonon dynamics. Surprisingly, an anomalous coherent acoustic phonon mode with pressure softening behavior was observed within the range of ∼3-8 GPa, showing distinct laser power and time dependences. Density functional theory calculations show that this mode, identified as the shear mode along the armchair orientation, gains significant electron-phonon coupling strength from out-of-plane compression that leads to decreased phonon frequency. Our results provide insights into the structure evolution of BP with pressure and hold potential for applications in microelectromechanical devices.
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Affiliation(s)
- Simin Wu
- State Key Laboratory of Surface Physics and Department of Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Shanghai Key Laboratory of Metasurfaces for Light Manipulation, Fudan University, Shanghai 200433, China
| | - Weibin Chu
- State Key Laboratory of Surface Physics and Department of Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Shanghai Key Laboratory of Metasurfaces for Light Manipulation, Fudan University, Shanghai 200433, China
- Key Laboratory of Computational Physical Science (MOE) and Institute of Computational Physical Science, Fudan University, Shanghai 200433, China
| | - Yang Lu
- Center for High Pressure Science & Technology Advanced Research, Shanghai 201203, China
- Shanghai Key Laboratory of Material Frontiers Research in Extreme Environments (MFree), Shanghai Advanced Research in Physical Sciences (SHARPS), Shanghai 201203, China
| | - Minbiao Ji
- State Key Laboratory of Surface Physics and Department of Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Shanghai Key Laboratory of Metasurfaces for Light Manipulation, Fudan University, Shanghai 200433, China
- Academy for Engineering and Technology, Yiwu Research Institute of Fudan University, Fudan University, Shanghai 200433, China
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10
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Zhao J, Qi Y, Yao C, Zeng H. Modulating the electronic properties and band alignments of the arsenene/MoSi 2N 4 van der Waals heterostructure via applying strain and electric field. Phys Chem Chem Phys 2023. [PMID: 38032541 DOI: 10.1039/d3cp04877b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/01/2023]
Abstract
The two-dimensional (2D) MoSi2N4 monolayer fabricated recently has attracted extensive attention due to its exotic electronic properties and excellent stability for future applications. Using first-principles calculations, we have shown that the electronic properties of the arsenene/MoSi2N4 van der Waals (vdW) heterostructure can be effectively modulated by applying in-plane/vertical strain and vertical electric field. The arsenene/MoSi2N4 vdW heterostructure has type-II band alignment, facilitating the separation of photogenerated electron-hole pairs. The heterostructure is predicted to have an indirect bandgap of about 0.52 eV by using the PBE functional (0.87 eV by using the hybrid functional). Furthermore, under εz = 0.5 Å vertical tensile strain or -0.05 V Å-1 vertical electric field, the arsenene/MoSi2N4 heterostructure can not only experience transition from an indirect to a direct bandgap semiconductor, but also exhibit type-II to type-I band alignment transition. The calculated optical absorption properties reveal that the formation of the vdW heterostructure can effectively enhance the light absorption, and the absorption coefficient in visible and ultraviolet regions is much higher than those of the arsenene and the MoSi2N4 monolayer. Most importantly, based on charge transfer analysis, we proposed the modulation mechanism of the electronic properties of the vdW heterostructure influenced by vertical strain and electric field. Our study provides physical insights into manipulating the electronic and optoelectronic properties of MoSi2N4 based vdW heterostructures, which may be helpful for their practical applications.
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Affiliation(s)
- Jun Zhao
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China.
| | - Yunxi Qi
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China.
| | - Can Yao
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China.
| | - Hui Zeng
- School of Microelectronics, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China.
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11
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Ngoc LN, Nguyen HTT, Hoang VV, Ngoc Thanh Thuy T. Compression-induced hexa-to-tetra phase transition of confined germanene. J Mol Graph Model 2023; 124:108553. [PMID: 37343445 DOI: 10.1016/j.jmgm.2023.108553] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/01/2023] [Revised: 06/09/2023] [Accepted: 06/15/2023] [Indexed: 06/23/2023]
Abstract
Via molecular dynamics (MD) simulations we find the existence of the new allotrope of two-dimensional (2D) germanene, i.e. 2D tetra-germanene (tetra-Ge) which contains entirely tetragons. We compress 2D hexa-germanene (hexa-Ge) step by step over a broad density range at constant temperature and hexa-tetra Ge phase transition occurs. We find that the compression of hexa-Ge at 2000 K (not far above the melting point of hexa-Ge) leads to the formation of tetra-Ge with the highest quality. Atomic structure of the obtained tetra-Ge at 300 K is analyzed in details. Although fraction of tetragons in the tetra-Ge is very high (larger than 0.99), some defects are found in addition to the skew tetragons. Due to containing almost entirely tetragons, tetra-Ge may exhibit new behaviors unlike those of the hexa-Ge. Subsequent studies in this direction for 2D tetra-Ge. In addition, first-principles calculations under density functional theory confirm the existence of stable tetra-Ge.
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Affiliation(s)
- Le Nhu Ngoc
- Laboratory of Computational Physics, Faculty of Applied Science, Ho Chi Minh City University of Technology (HCMUT), Ho Chi Minh City, 268 Ly ThuongKiet Street, District 10, Ho Chi Minh City, Viet Nam; Vietnam National University Ho Chi Minh City, LinhTrung Ward, Thu Duc District, Ho Chi Minh City, Viet Nam.
| | - Hang T T Nguyen
- Laboratory of Computational Physics, Faculty of Applied Science, Ho Chi Minh City University of Technology (HCMUT), Ho Chi Minh City, 268 Ly ThuongKiet Street, District 10, Ho Chi Minh City, Viet Nam; Vietnam National University Ho Chi Minh City, LinhTrung Ward, Thu Duc District, Ho Chi Minh City, Viet Nam.
| | - Vo Van Hoang
- Laboratory of Computational Physics, Faculty of Applied Science, Ho Chi Minh City University of Technology (HCMUT), Ho Chi Minh City, 268 Ly ThuongKiet Street, District 10, Ho Chi Minh City, Viet Nam; Vietnam National University Ho Chi Minh City, LinhTrung Ward, Thu Duc District, Ho Chi Minh City, Viet Nam.
| | - Tran Ngoc Thanh Thuy
- Hierarchical Green-Energy Materials (Hi-GEM) Research Center, National Cheng Kung University (NCKU), Tainan, Taiwan.
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12
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Chen RS, Lu Y. Negative Capacitance Field Effect Transistors based on Van der Waals 2D Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2304445. [PMID: 37899295 DOI: 10.1002/smll.202304445] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2023] [Revised: 09/20/2023] [Indexed: 10/31/2023]
Abstract
Steep subthreshold swing (SS) is a decisive index for low energy consumption devices. However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann Tyranny, which limits the scaling of SS to sub-60 mV dec-1 at room temperature. Ferroelectric gate stack with negative capacitance (NC) is proved to reduce the SS effectively by the amplification of the gate voltage. With the application of 2D ferroelectric materials, the NC FETs can be further improved in performance and downscaled to a smaller dimension as well. This review introduces some related concepts for in-depth understanding of NC FETs, including the NC, internal gate voltage, SS, negative drain-induced barrier lowering, negative differential resistance, single-domain state, and multi-domain state. Meanwhile, this work summarizes the recent advances of the 2D NC FETs. Moreover, the electrical characteristics of some high-performance NC FETs are expressed as well. The factors which affect the performance of the 2D NC FETs are also presented in this paper. Finally, this work gives a brief summary and outlook for the 2D NC FETs.
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Affiliation(s)
- Ruo-Si Chen
- School of Engineering, College of Engineering, Computing & Cybernetics, Australian National University, Canberra, ACT, 2602, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering, Computing & Cybernetics, Australian National University, Canberra, ACT, 2602, Australia
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13
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Jiao C, Pei S, Wu S, Wang Z, Xia J. Tuning and exploiting interlayer coupling in two-dimensional van der Waals heterostructures. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 86:114503. [PMID: 37774692 DOI: 10.1088/1361-6633/acfe89] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Accepted: 09/29/2023] [Indexed: 10/01/2023]
Abstract
Two-dimensional (2D) layered materials can stack into new material systems, with van der Waals (vdW) interaction between the adjacent constituent layers. This stacking process of 2D atomic layers creates a new degree of freedom-interlayer interface between two adjacent layers-that can be independently studied and tuned from the intralayer degree of freedom. In such heterostructures (HSs), the physical properties are largely determined by the vdW interaction between the individual layers,i.e.interlayer coupling, which can be effectively tuned by a number of means. In this review, we summarize and discuss a number of such approaches, including stacking order, electric field, intercalation, and pressure, with both their experimental demonstrations and theoretical predictions. A comprehensive overview of the modulation on structural, optical, electrical, and magnetic properties by these four approaches are also presented. We conclude this review by discussing several prospective research directions in 2D HSs field, including fundamental physics study, property tuning techniques, and future applications.
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Affiliation(s)
- Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Song Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
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14
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Kim D, Pandey J, Jeong J, Cho W, Lee S, Cho S, Yang H. Phase Engineering of 2D Materials. Chem Rev 2023; 123:11230-11268. [PMID: 37589590 DOI: 10.1021/acs.chemrev.3c00132] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/18/2023]
Abstract
Polymorphic 2D materials allow structural and electronic phase engineering, which can be used to realize energy-efficient, cost-effective, and scalable device applications. The phase engineering covers not only conventional structural and metal-insulator transitions but also magnetic states, strongly correlated band structures, and topological phases in rich 2D materials. The methods used for the local phase engineering of 2D materials include various optical, geometrical, and chemical processes as well as traditional thermodynamic approaches. In this Review, we survey the precise manipulation of local phases and phase patterning of 2D materials, particularly with ideal and versatile phase interfaces for electronic and energy device applications. Polymorphic 2D materials and diverse quantum materials with their layered, vertical, and lateral geometries are discussed with an emphasis on the role and use of their phase interfaces. Various phase interfaces have demonstrated superior and unique performance in electronic and energy devices. The phase patterning leads to novel homo- and heterojunction structures of 2D materials with low-dimensional phase boundaries, which highlights their potential for technological breakthroughs in future electronic, quantum, and energy devices. Accordingly, we encourage researchers to investigate and exploit phase patterning in emerging 2D materials.
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Affiliation(s)
- Dohyun Kim
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Juhi Pandey
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Juyeong Jeong
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Woohyun Cho
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seungyeon Lee
- Division of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Korea
| | - Suyeon Cho
- Division of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Korea
| | - Heejun Yang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
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15
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Du G, Ke F, Han W, Chen B, Xia Q, Kang J, Chen Y. Thermodynamic Origins of Structural Metastability in Two-Dimensional Black Arsenic. J Phys Chem Lett 2023; 14:8676-8683. [PMID: 37733246 DOI: 10.1021/acs.jpclett.3c02214] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/22/2023]
Abstract
Two-dimensional (2D) materials have aroused considerable research interest owing to their potential applications in nanoelectronics and optoelectronics. Thermodynamic stability of 2D structures inevitably affects the performance and power consumption of the fabricated nanodevices. Black arsenic (b-As), as a cousin of black phosphorus, has presented extremely high anisotropy in physical properties. However, systematic research on structural stability of b-As is still lacking. Herein, we demonstrated the detailed analysis on structural metastability of the natural b-As, and determined its existence conditions in terms of two essential thermodynamic variables, hydrostatic pressure and temperature. Our results confirmed that b-As can survive only below 0.7 GPa, and then irreversibly transforms to gray arsenic, consistent with our theoretical calculations. Furthermore, a thermal annealing strategy was developed to precisely control the thickness of the b-As flake, and it sublimates at 300 °C. These results could pave the way for 2D b-As in many promising applications.
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Affiliation(s)
- Guoshuai Du
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Feng Ke
- Department of Geological Sciences, Stanford University, Stanford, California 94305, United States
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Wuxiao Han
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Bin Chen
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Qinglin Xia
- School of Physics and State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083 China
| | - Jun Kang
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Yabin Chen
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
- BIT Chongqing Institute of Microelectronics and Microsystems, Chongqing, 400030, China
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16
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Pan X, Xin B, Zeng H, Cheng P, Ye T, Yao D, Xue E, Ding J, Wang WH. Pressure-Induced Structural Phase Transition and Enhanced Interlayer Coupling in Two-Dimensional Ferromagnet CrSiTe 3. J Phys Chem Lett 2023; 14:3320-3328. [PMID: 36988618 DOI: 10.1021/acs.jpclett.3c00507] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
The two-dimensional van der Waals ferromagnetic semiconductor CrSiTe3 has attracted growing interest as an intrinsic topological magnet. Both superconductivity and enhancement of ferromagnetism, usually competing for orders, have been observed in CrSiTe3 at high pressure. However, the high-pressure structure of CrSiTe3 is still unclear, setting obstacles in understanding pressure-induced novel physics. Here, combining the Raman spectra and first-principles calculations, the structure of CrSiTe3 at high pressure has been clarified. The interlayer breathing mode located at ∼42.1 cm-1 has been observed for the first time in CrSiTe3 by ultralow-frequency Raman spectroscopy at high pressure. Theoretical calculations confirm a phase transition from the R3̅ phase to the R3 phase accompanying noticeable enhancement of the Curie temperature. Our results highlight ultralow-frequency Raman spectroscopy combined with high pressure for detecting and modulating the structure and interlayer coupling of two-dimensional materials.
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Affiliation(s)
- Xiaomei Pan
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, China
| | - Baojuan Xin
- Department of Electronic Science and Engineering and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300350, China
| | - Hong Zeng
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, China
| | - Peng Cheng
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, China
| | - Tingting Ye
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, China
| | - Deyuan Yao
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, China
| | - Erqiao Xue
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, China
| | - Junfeng Ding
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, China
- Jianghuai Frontier Technology Coordination and Innovation Center, Hefei 230088, China
| | - Wei-Hua Wang
- Department of Electronic Science and Engineering and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300350, China
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17
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Wang JF, Liu L, Liu XD, Li Q, Cui JM, Zhou DF, Zhou JY, Wei Y, Xu HA, Xu W, Lin WX, Yan JW, He ZX, Liu ZH, Hao ZH, Li HO, Liu W, Xu JS, Gregoryanz E, Li CF, Guo GC. Magnetic detection under high pressures using designed silicon vacancy centres in silicon carbide. NATURE MATERIALS 2023; 22:489-494. [PMID: 36959503 DOI: 10.1038/s41563-023-01477-5] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2022] [Accepted: 01/12/2023] [Indexed: 06/18/2023]
Abstract
Pressure-induced magnetic phase transitions are attracting interest as a means to detect superconducting behaviour at high pressures in diamond anvil cells, but determining the local magnetic properties of samples is a challenge due to the small volumes of sample chambers. Optically detected magnetic resonance of nitrogen vacancy centres in diamond has recently been used for the in situ detection of pressure-induced phase transitions. However, owing to their four orientation axes and temperature-dependent zero-field splitting, interpreting these optically detected magnetic resonance spectra remains challenging. Here we study the optical and spin properties of implanted silicon vacancy defects in 4H-silicon carbide that exhibit single-axis and temperature-independent zero-field splitting. Using this technique, we observe the magnetic phase transition of Nd2Fe14B at about 7 GPa and map the critical temperature-pressure phase diagram of the superconductor YBa2Cu3O6.6. These results highlight the potential of silicon vacancy-based quantum sensors for in situ magnetic detection at high pressures.
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Affiliation(s)
- Jun-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- College of Physics, Sichuan University, Chengdu, China
| | - Lin Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China
| | - Xiao-Di Liu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China.
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
| | - Jin-Ming Cui
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
| | - Di-Fan Zhou
- Physics Department, Shanghai Key Laboratory of High Temperature Superconductors, Shanghai University, Shanghai, China
| | - Ji-Yang Zhou
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
| | - Yu Wei
- Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei, China
| | - Hai-An Xu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China
| | - Wan Xu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China
| | - Wu-Xi Lin
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
| | - Jin-Wei Yan
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China
| | - Zhen-Xuan He
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
| | - Zheng-Hao Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
| | - Zhi-He Hao
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
| | - Hai-Ou Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
| | - Wen Liu
- Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei, China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China.
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China.
| | - Eugene Gregoryanz
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China.
- Centre for Science at Extreme Conditions and School of Physics and Astronomy, University of Edinburgh, Edinburgh, UK.
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, China.
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China.
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China.
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
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18
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Liu HY, Wu JY. Tunable Electronic Properties of Two-Dimensional GaSe 1-xTe x Alloys. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:818. [PMID: 36903697 PMCID: PMC10005243 DOI: 10.3390/nano13050818] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/04/2023] [Revised: 02/18/2023] [Accepted: 02/21/2023] [Indexed: 06/18/2023]
Abstract
In this work, we performed a theoretical study on the electronic properties of monolayer GaSe1-xTex alloys using the first-principles calculations. The substitution of Se by Te results in the modification of a geometric structure, charge redistribution, and bandgap variation. These remarkable effects originate from the complex orbital hybridizations. We demonstrate that the energy bands, the spatial charge density, and the projected density of states (PDOS) of this alloy are strongly dependent on the substituted Te concentration.
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Affiliation(s)
- Hsin-Yi Liu
- Department of Physics/QTC/Hi-GEM, National Cheng Kung University, Tainan 701, Taiwan
| | - Jhao-Ying Wu
- Center of General Studies, National Kaohsiung University of Science and Technology, Kaohsiung 811, Taiwan
- Department of Energy and Refrigerating Air-Conditioning Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 811, Taiwan
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19
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Feng X, Bu K, Liu T, Guo S, Sun Z, Fu T, Xu Y, Liu K, Yang S, Zhao Y, Li H, Lü X, Zhai T. Giant Tunability of Charge Transport in 2D Inorganic Molecular Crystals by Pressure Engineering. Angew Chem Int Ed Engl 2023; 62:e202217238. [PMID: 36461902 DOI: 10.1002/anie.202217238] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/23/2022] [Revised: 12/01/2022] [Accepted: 12/02/2022] [Indexed: 12/07/2022]
Abstract
The unique intermolecular van der Waals force in emerging two-dimensional inorganic molecular crystals (2DIMCs) endows them with highly tunable structures and properties upon applying external stimuli. Using high pressure to modulate the intermolecular bonding, here we reveal the highly tunable charge transport behavior in 2DIMCs for the first time, from an insulator to a semiconductor. As pressure increases, 2D α-Sb2 O3 molecular crystal undergoes three isostructural transitions, and the intermolecular bonding enhances gradually, which results in a considerably decreased band gap by 25 % and a greatly enhanced charge transport. Impressively, the in situ resistivity measurement of the α-Sb2 O3 flake shows a sharp drop by 5 orders of magnitude in 0-3.2 GPa. This work sheds new light on the manipulation of charge transport in 2DIMCs and is of great significance for promoting the fundamental understanding and potential applications of 2DIMCs in advanced modern technologies.
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Affiliation(s)
- Xin Feng
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Kejun Bu
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, 201203, P. R. China
| | - Teng Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Songhao Guo
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, 201203, P. R. China
| | - Zongdong Sun
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tonghuan Fu
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, 201203, P. R. China
| | - Yongshan Xu
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Kailang Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Sijie Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yinghe Zhao
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xujie Lü
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, 201203, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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20
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Jiang J, Xu Y, Zhang X. Tunable Schottky and ohmic contacts in the Ti 2NF 2/α-Te van der Waals heterostructure. Phys Chem Chem Phys 2022; 24:21388-21395. [PMID: 36047321 DOI: 10.1039/d2cp02054h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two dimensional α-Te holds great promise in optoelectronic devices because of its high mobility and excellent environmental stability. In this study, the electronic structures and interfacial contact characteristics of the Ti2NF2/α-Te van der Waals heterostructure are investigated by means of first-principles calculations. It is found that p-type Schottky contacts with a Schottky barrier (SB) of 0.21 eV are formed at the Ti2NF2/α-Te interface. By applying external electric fields or controlling the interlayer coupling between the Ti2NF2 and α-Te monolayers, the SB height can be effectively tuned, and all the n-type Schottky, p-type Schottky, n-type ohmic and p-type ohmic contacts can be achieved. Such an extremely high tunability is further found to be closely associated with the charge transfer at the interface, as well as the interface dipole and the potential step. Our results provide an avenue for the design of future α-Te-based electronic devices with high performance.
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Affiliation(s)
- Jingwen Jiang
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Yiguo Xu
- Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology, Shenzhen, 518055, China.
| | - Xiuwen Zhang
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
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21
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Browne S, Waghmare UV, Singh A. Opportunities and challenges for 2D heterostructures in battery applications: a computational perspective. NANOTECHNOLOGY 2022; 33:272501. [PMID: 35344940 DOI: 10.1088/1361-6528/ac61c9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2022] [Accepted: 03/28/2022] [Indexed: 06/14/2023]
Abstract
With an increasing demand for large-scale energy storage systems, there is a need for novel electrode materials to store energy in batteries efficiently. 2D materials are promising as electrode materials for battery applications. Despite their excellent properties, none of the available single-phase 2D materials offers a combination of properties required for maximizing energy density, power density, and cycle life. This article discusses how stacking distinct 2D materials into a 2D heterostructure may open up new possibilities for battery electrodes, combining favourable characteristics and overcoming the drawbacks of constituent 2D layers. Computational studies are crucial to advancing this field rapidly with first-principles simulations of various 2D heterostructures forming the basis for such investigations that offer insights into processes that are hard to determine otherwise. We present a perspective on the current methodology, along with a review of the known 2D heterostructures as anodes and their potential for Li and Na-ion battery applications. 2D heterostructures showcase excellent tunability with different compositions. However, each of them has distinct properties, with its own set of challenges and opportunities for application in batteries. We highlight the current status and prospects to stimulate research into designing new 2D heterostructures for battery applications.
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Affiliation(s)
- Stephen Browne
- Center for Study of Science, Technology & Policy (CSTEP), Bangalore-560094, India
| | - Umesh V Waghmare
- Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore-560064, India
| | - Anjali Singh
- Center for Study of Science, Technology & Policy (CSTEP), Bangalore-560094, India
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22
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Slassi A. Band offset engineering at C 2N/MSe 2 (M = Mo, W) interfaces. RSC Adv 2022; 12:12068-12077. [PMID: 35481105 PMCID: PMC9019558 DOI: 10.1039/d2ra00847e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/09/2022] [Accepted: 04/11/2022] [Indexed: 11/21/2022] Open
Abstract
Stacking layered two-dimensional materials in a type-II band alignment block has provided a high-performance method in photocatalytic water-splitting technology. The key parameters in such heterostructure configurations are the valence and conduction band offsets at the interface, which determine the device performance. Here, based on density functional theory calculations, the bandgap and band offsets at C2N/MSe2 (M = Mo, W) interfaces have been engineered. The main findings demonstrate that the C2N monolayer interacts with both MoSe2 and WSe2 monolayers through weak van der Waals interactions. These heterostructures possess a narrower indirect bandgap and a typical type-II heterostructure feature, being suitable for promoting the separation of photogenerated electron-hole pairs. The calculated Gibbs free energy of hydrogen adsorption demonstrates a reduction in the overpotential, towards the hydrogen evolution reaction, upon forming heterostructures. To further tune the bandgap values and band offsets of heterostructures, the external perturbations are included through a vertical strain and finite electric field. It is found that both the vertical strain and electric field strongly modulate the bandgap values and the magnitude of the band offsets, while the typical type-II band alignment remains preserved. It is noticeable that the band offset magnitudes of the C2N/MoSe2 and C2N/WSe2 heterostructures are more sensitive to an external electric field than to a vertical interlayer strain.
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Affiliation(s)
- Amine Slassi
- Istituto Nanoscienze-CNR Via Campi 213a I-41125 Modena Italy
- Laboratory for Chemistry of Novel Materials, Université de Mons Place du Parc 20 7000 Mons Belgium
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23
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Wu X, Chen X, Yang R, Zhan J, Ren Y, Li K. Recent Advances on Tuning the Interlayer Coupling and Properties in van der Waals Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105877. [PMID: 35044721 DOI: 10.1002/smll.202105877] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2021] [Revised: 11/25/2021] [Indexed: 06/14/2023]
Abstract
2D van der Waals (vdW) heterostructures are receiving increasing research attention due to the theoretically amazing properties and unprecedented application potential. However, the as-synthesized heterostructures are generally underperforming due to the weak interlayer coupling, which inspires the researchers to find ways to modulate the interlayer coupling and properties, realizing the tailored performance for actual applications. There have been a lot of publications regarding the controllable regulation of the structures and properties of 2D vdW heterostructures in the past few years, while a review work summarizing the current advances is not yet available, though it is significant. This paper conducts a state-of-the-art review regarding the current research progress of performance modulation of vdW heterostructures by different techniques. First, the general synthesis methods of vdW heterostructures are summarized. Then, different performance modulation techniques, that is, mechanical-based, external fields-assisted, and particle beam irradiation-based methods, are discussed and compared in detail. Some of the newly proposed concepts are described. Thereafter, applications of vdW heterostructures with tailored properties are reviewed for the application prospects of the topic around this area. Moreover, the future research challenges and prospects are discussed, aiming at triggering more research interest and device applications around this topic.
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Affiliation(s)
- Xin Wu
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong, 519082, China
| | - Xiyue Chen
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong, 519082, China
| | - Ruxue Yang
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong, 519082, China
| | - Jianbin Zhan
- State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing, 400044, China
| | - Yingzhi Ren
- State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing, 400044, China
| | - Kun Li
- State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing, 400044, China
- Chongqing Key Laboratory of Metal Additive Manufacturing (3D Printing), Chongqing University, Chongqing, 400044, China
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24
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Chang Y, Huang L, Zhou Y, Wang J, Zhai W. Controlled Localized Phase Transition of Selenium for Color-Selective Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:5624-5633. [PMID: 35050577 DOI: 10.1021/acsami.1c22909] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Color-selective photodetectors are widely applied in several fields; however, they suffer from complex fabrication and low resolution. Herein, we propose a simple and convenient design to achieve a logical color-selective heterojunction photodetector composed of CdS and Se with a crystalline/amorphous mixed state. The as-deposited amorphous Se top layer in the heterojunction is partly transformed to trigonal crystalline Se by localized in situ phase transformation during annealing. As these two heterojunctions have different photoresponses under the same wavelength, the integrated device can accurately identify red, green, and blue light via logical judgment. Finally, the device exhibits high recognition ability in actual tests. This work provides a potential development of high-resolution color-selective photodetectors for visible light communication and logical photoelectric devices.
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Affiliation(s)
- Yu Chang
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an 710072, China
| | - Linfeng Huang
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an 710072, China
| | - Yingcai Zhou
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an 710072, China
| | - Jianyuan Wang
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an 710072, China
| | - Wei Zhai
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an 710072, China
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25
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Yu LP, Zhou XH, Lu L, Xu L, Wang FJ. MXene/Carbon Nanotube Hybrids: Synthesis, Structures, Properties, and Applications. CHEMSUSCHEM 2021; 14:5079-5111. [PMID: 34570428 DOI: 10.1002/cssc.202101614] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2021] [Revised: 09/25/2021] [Indexed: 06/13/2023]
Abstract
Since the successful preparation of few-layer transition metal carbides from three-dimensional MAX phases in 2011, MXenes (known as a family of layered transition metal carbides, nitrides, and carbonitrides) have been intensively studied. Though MXenes have been adopted as active materials in many applications, issues including aggregation and restacking are likely to hamper their potential applications. In order to address these prevailing challenges, the concept of MXene/carbon nanotube (CNT) hybrids was proposed initially in 2015, where CNTs were incorporated as the spacers and conductive additives. Ever since, MXene/CNT hybrids with different architectures have been synthesized by a number of methods and applied in numerous fields. Herein, after the discussion about general synthesis approaches, architectures, and properties of the hybrids, this Review summarized the recent advances in the application of MXene/CNT hybrids in energy storage devices, sensors, electrocatalysis, electromagnetic interference shielding, and water treatment, in which the function of individual components was clarified. In the end, the current research trend in this field were discussed and several technical issues were highlighted along with some suggestions on future research directions.
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Affiliation(s)
- Le Ping Yu
- Institute of Automotive Technology, Wuxi Vocational Institute of Commerce, Wuxi, Jiangsu, 214153, P. R. China
| | - Xiao Hong Zhou
- Institute of Automotive Technology, Wuxi Vocational Institute of Commerce, Wuxi, Jiangsu, 214153, P. R. China
| | - Lu Lu
- Institute of Automotive Technology, Wuxi Vocational Institute of Commerce, Wuxi, Jiangsu, 214153, P. R. China
| | - Lyu Xu
- Institute of Automotive Technology, Wuxi Vocational Institute of Commerce, Wuxi, Jiangsu, 214153, P. R. China
| | - Feng Jun Wang
- Institute of Automotive Technology, Wuxi Vocational Institute of Commerce, Wuxi, Jiangsu, 214153, P. R. China
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26
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Rahman S, Torres JF, Khan AR, Lu Y. Recent Developments in van der Waals Antiferromagnetic 2D Materials: Synthesis, Characterization, and Device Implementation. ACS NANO 2021; 15:17175-17213. [PMID: 34779616 DOI: 10.1021/acsnano.1c06864] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Magnetism in two dimensions is one of the most intriguing and alluring phenomena in condensed matter physics. Atomically thin 2D materials have emerged as a promising platform for exploring magnetic properties, leading to the development of essential technologies such as supercomputing and data storage. Arising from spin and charge dynamics in elementary particles, magnetism has also unraveled promising advances in spintronic devices and spin-dependent optoelectronics and photonics. Recently, antiferromagnetism in 2D materials has received extensive attention, leading to significant advances in their understanding and emerging applications; such materials have zero net magnetic moment yet are internally magnetic. Several theoretical and experimental approaches have been proposed to probe, characterize, and modulate the magnetic states efficiently in such systems. This Review presents the latest developments and current status for tuning the magnetic properties in distinct 2D van der Waals antiferromagnets. Various state-of-the-art optical techniques deployed to investigate magnetic textures and dynamics are discussed. Furthermore, device concepts based on antiferromagnetic spintronics are scrutinized. We conclude with remarks on related challenges and technological outlook in this rapidly expanding field.
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Affiliation(s)
- Sharidya Rahman
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia
| | - Juan F Torres
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia
| | - Ahmed Raza Khan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre for Quantum Computation and Communication Technology, Department of Quantum Science, Research School of Physics and Engineering, The Australian National University, Acton, ACT 2601, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), ANU node, Canberra, ACT 2601, Australia
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27
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Huang S, Lu Y, Wang F, Lei Y, Song C, Zhang J, Xing Q, Wang C, Xie Y, Mu L, Zhang G, Yan H, Chen B, Yan H. Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus. PHYSICAL REVIEW LETTERS 2021; 127:186401. [PMID: 34767429 DOI: 10.1103/physrevlett.127.186401] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2021] [Accepted: 09/21/2021] [Indexed: 06/13/2023]
Abstract
Through infrared spectroscopy, we systematically study the pressure effect on electronic structures of few-layer black phosphorus (BP) with layer number ranging from 2 to 13. We reveal that the pressure-induced shift of optical transitions exhibits strong layer dependence. In sharp contrast to the bulk counterpart which undergoes a semiconductor to semimetal transition under ∼1.8 GPa, the band gap of 2 L increases with increasing pressure until beyond 2 GPa. Meanwhile, for a sample with a given layer number, the pressure-induced shift also differs for transitions with different indices. Through the tight-binding model in conjunction with a Morse potential for the interlayer coupling, this layer- and transition-index-dependent pressure effect can be fully accounted. Our study paves a way for versatile van der Waals engineering of two-dimensional BP.
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Affiliation(s)
- Shenyang Huang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yang Lu
- Center for High Pressure Science & Technology Advanced Research, Shanghai 201203, China
| | - Fanjie Wang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yuchen Lei
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Chaoyu Song
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Jiasheng Zhang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Qiaoxia Xing
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Chong Wang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yuangang Xie
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Lei Mu
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Guowei Zhang
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China
| | - Hao Yan
- CAS Key Laboratory of Experimental Study under Deep-sea Extreme Conditions, Institute of Deep-Sea Science and Engineering, Chinese Academy of Sciences, Sanya 572000, China
| | - Bin Chen
- Center for High Pressure Science & Technology Advanced Research, Shanghai 201203, China
| | - Hugen Yan
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
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28
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Zhang C, Gu Y, Wang L, Huang LL, Fu Y, Liu C, Wang S, Su H, Mei JW, Zou X, Dai JF. Pressure-Enhanced Ferromagnetism in Layered CrSiTe 3 Flakes. NANO LETTERS 2021; 21:7946-7952. [PMID: 34533027 DOI: 10.1021/acs.nanolett.1c01994] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Despite recent advances in layered ferromagnets, ferromagnetic interactions in these materials are rather weak. Here, we report pressure-enhanced ferromagnetism in layered CrSiTe3 flakes revealed by high-pressure magnetic circular dichroism measurements. Below ∼3 GPa, CrSiTe3 undergoes a paramagnetic-to-ferromagnetic phase transition at ∼32 K, and the field-induced spin-flip in the ferromagnetic phase produces nearly zero hysteresis loops, demonstrating soft ferromagnetism. Above ∼4 GPa, a soft-to-hard ferromagnetic transition occurs, signaled by rectangular-shaped hysteresis loops with finite coercivity and remanent magnetization. Interestingly, as pressure increases, the Curie temperature and coercivity dramatically increase up to ∼138 K and 0.17 T at 7.8 GPa, respectively, in contrast to ∼36 K and 0.02 T at 4.6 GPa. It indicates a remarkable influence of pressure on exchange interactions, which is consistent with DFT calculations. The effective interaction between magnetic couplings and external pressure offers new opportunities in pursuit of high-temperature layered ferromagnets.
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Affiliation(s)
- Cheng Zhang
- School of Physics, Harbin Institute of Technology, Harbin 150001, China
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yue Gu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Le Wang
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Liang-Long Huang
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Ying Fu
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Cai Liu
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Shanmin Wang
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Huimin Su
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jia-Wei Mei
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
| | - Xiaolong Zou
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Jun-Feng Dai
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
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29
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de Vargas DD, Köhler MH, Baierle RJ. Electrically tunable band gap in strained h-BN/silicene van der Waals heterostructures. Phys Chem Chem Phys 2021; 23:17033-17040. [PMID: 34342330 DOI: 10.1039/d1cp02012a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022]
Abstract
Single layers of hexagonal boron nitride (h-BN) and silicene are brought together to form h-BN/silicene van der Waals (vdW) heterostructures. The effects of external electric fields and compressive strain on their structural and electronic properties are systematically studied through first principles calculations. Two silicene phases are considered: the low-buckled Si(LB) and the dumbbell-like Si(DB). They show exciting new properties as compared to the isolated layers, such as a tunable band gap that depends on the interlayer distance and is dictated by the charge transfer and orbital hybridization between h-BN and silicene, especially in the case of Si(LB). The electric field also increases the band gap in h-BN/Si(DB) and causes an asymmetric charge rearrangement in h-BN/Si(LB). Remarkably, we found a great potential of h-BN layers to function as substrates for silicene, enhancing both the strain and electric field effects on its electronic properties. These results contribute to a more detailed understanding of h-BN/Si 2D-based materials, highlighting promising possibilities in low-dimensional electronics.
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Affiliation(s)
- Douglas D de Vargas
- Departamento de Física, Universidade Federal de Santa Maria, 97105-900, Santa Maria, Brazil.
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30
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Segura A, Cuscó R, Attaccalite C, Taniguchi T, Watanabe K, Artús L. Tuning the Direct and Indirect Excitonic Transitions of h-BN by Hydrostatic Pressure. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2021; 125:12880-12885. [PMID: 34603570 PMCID: PMC8480779 DOI: 10.1021/acs.jpcc.1c02082] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2021] [Revised: 05/05/2021] [Indexed: 05/31/2023]
Abstract
The pressure dependence of the direct and indirect bandgap transitions of hexagonal boron nitride is investigated using optical reflectance under hydrostatic pressure in an anvil cell with sapphire windows up to 2.5 GPa. Features in the reflectance spectra associated with the absorption at the direct and indirect bandgap transitions are found to downshift with increasing pressure, with pressure coefficients of -26 ± 2 and -36 ± 2 meV GPa-1, respectively. The GW calculations yield a faster decrease of the direct bandgap with pressure compared to the indirect bandgap. Including the strong excitonic effects through the Bethe-Salpeter equation, the direct excitonic transition is found to have a much lower pressure coefficient than the indirect excitonic transition. This suggests a strong variation of the binding energy of the direct exciton with pressure. The experiments corroborate the theoretical predictions and indicate an enhancement of the indirect nature of the bulk hexagonal boron nitride crystal under hydrostatic pressure.
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Affiliation(s)
- Alfredo Segura
- Departamento
de Física Aplicada-ICMUV, Malta-Consolider Team, Universitat de València, 46100 Burjassot, Spain
| | - Ramon Cuscó
- GEO3BCN-CSIC,
Consejo Superior de Investigaciones Científicas, C. Lluís Solé
i Sabarís s.n., 08028 Barcelona, Spain
| | - Claudio Attaccalite
- Aix
Marseille Université, CNRS, CINaM UMR 7325, Campus de Luminy, Case 913, 13288 Marseille, France
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics, National Institute for Materials
Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research
Center for Functional Materials, National Institute for Materials
Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Luis Artús
- GEO3BCN-CSIC,
Consejo Superior de Investigaciones Científicas, C. Lluís Solé
i Sabarís s.n., 08028 Barcelona, Spain
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31
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Song H, Jiang D, Wang N, Xing W, Guo R, Lin Z, Yao J, Wang Y, Tu H, Zhang G. Na 3Bi(IO 3) 6: An Alkali-Metal Bismuth Iodate with Intriguing One-Dimensional [BiI 6O 18] Chains and Pressure-Induced Structural Transition. Inorg Chem 2021; 60:2893-2898. [PMID: 33573378 DOI: 10.1021/acs.inorgchem.0c03697] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
An alkali-metal bismuth iodate, Na3Bi(IO3)6, was successfully obtained by the hydrothermal method for the first time and contains intriguing one-dimensional [BiI6O18] chains. High-pressure Raman spectra were carried out to investigate the structural transition of Na3Bi(IO3)6. Electronic states and anisotropic optical responses were also investigated by theoretical calculations.
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Affiliation(s)
- Huimin Song
- Beijing Center for Crystal Research and Development, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Dequan Jiang
- Center for High Pressure Science and Technology Advanced Research, Beijing 100094, China
| | - Naizheng Wang
- Beijing Center for Crystal Research and Development, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wenhao Xing
- Beijing Center for Crystal Research and Development, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ruixin Guo
- Beijing Center for Crystal Research and Development, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zheshuai Lin
- Beijing Center for Crystal Research and Development, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiyong Yao
- Beijing Center for Crystal Research and Development, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yonggang Wang
- Center for High Pressure Science and Technology Advanced Research, Beijing 100094, China
| | - Heng Tu
- Beijing Center for Crystal Research and Development, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Guochun Zhang
- Beijing Center for Crystal Research and Development, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.,State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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