2D Materials Enabled Next-Generation Integrated Optoelectronics: from Fabrication to Applications

Elucidating the role of oxidation in two-dimensional silicon nanosheets

We report a synthetic protocol that yields hydrogen-terminated 2D silicon nanosheets with greatly reduced siloxane (e.g., Si-O-Si, OxSi) content. These nanosheets displayed weak, broad photoluminescence centered near 610 nm with a low absolute photoluminescence quantum yield (as low as 0.2%). By intentionally oxidizing the nanosheets, the photoluminescence peak emission wavelength blueshifted to 510 nm, and the quantum yield increased by more than an order of magnitude to 8.5%. These results demonstrate that oxidation of 2D silicon nanosheets modulates the material's bandgap and suggests that previously reported photoluminescence properties for this material resulted, in part, from oxidation.

Endurable IGZO/SnSx/IGZO Heterojunction Phototransistor Arrays for Image Sensors

Optoelectronic devices require stable operation to detect repetitive visual information. In this study, endurable arrays based on heterojunction phototransistors composed of indium-gallium-zinc oxide (IGZO) with a low dark current and tin sulfide (SnSx) capable of absorbing visible light are developed for image sensors. The tandem structure of IGZO/SnSx/IGZO (ISI) enables stable operation under repetitive exposure to visible light by improving the transport ability of the photoexcited carriers through mitigated trap sites and their separation into each IGZO layer. Additionally, the structure promotes recombination by confining the holes. Therefore, the optimal ISI phototransistors exhibit a photoresponsivity of 514.50 A/W and a detectivity of 1.31 × 109 Jones under red light (635 nm) of 1 mW/mm2 and endurable time-dependent photoresponse characteristics, including a slope value of 1.66 × 10-11, without the persistent photoconductivity phenomenon under green light (532 nm) at a frequency of 50 mHz for over 4,000 s. Furthermore, image sensing characteristics of the 6 × 6 arrays based on ISI phototransistors for image sensors are demonstrated by sequentially applying "4" and "2" digit numbers. These technologies contribute to the development of endurable oxide-based optoelectronic devices and provide valuable perspectives on the utility of next-generation image sensors.

Antiferromagnetic semiconductor nature in a GeS2 monolayer doped with Mn and Fe transition metals

The absence of intrinsic magnetism in two-dimensional (2D) materials demands functionalization as necessary for broadening their applications. In this work, doping with transition metals (Mn and Fe) is proposed to modify the electronic and magnetic properties of a GeS2 monolayer. A pristine monolayer is an indirect gap semiconductor with an energy gap of 0.73(1.47) eV computed by using the PBE(HSE06) functional. Significant magnetism with a total magnetic moment of 1.18μB emerges in the GeS2 monolayer upon creating a single Ge vacancy, which is produced mainly by six nearest neighboring S atoms. In this case, the monolayer is metallized with S-px,y states responsible. Similarly, the magnetization of the GeS2 monolayer is also achieved by doping with Mn and Fe atoms with total magnetic moments of 3.00 and 3.78μB, respectively. The calculated band structures imply that the magnetic semiconductor nature with a spin-up/spin-down gap of 0.72/0.53 eV is induced by Mn impurity, while doping with Fe atoms leads to monolayer metallization. Being surrounded by more electronegative S atoms, Mn and Fe impurities lose charge amounts of 1.19 and 1.11e, respectively. Further investigations on spin coupling indicate the antiferromagnetic semiconductor nature in Mn- and Fe-doped systems, regardless of the distance between impurities. Our results provide important insights into the effects of doping into the GeS2 monolayer, which demonstrate that the doped systems hold promise for spintronic applications.

Tunable band alignment and large power conversion efficiency in a two-dimensional InS/ZnIn2S4 heterostructure

Heterostructures can efficiently modulate the bandgap of semiconductors and enhance the separation of photocarriers, thereby enhancing the performance of optoelectronic devices. Herein, we design an InS/ZnIn2S4 van der Waals (vdW) heterostructure and investigate its electronic and photovoltaic properties using first principles calculation. Compared to its individual monolayers, the InS/ZnIn2S4 heterostructure not only possesses a smaller band gap of 2.21 eV and superior light absorption performance in the visible short-wavelength region (<500 nm) but also forms a type-II1 band alignment. Moreover, a large power conversion efficiency (PCE) of 10.86% is achieved. The transformation of the band alignment from type-II1 to type-I or type-II2 can be forced using an external electric field, and the PCE can be further increased up to 12.19% at a positive E ⊥ of 0.2 V Å-1. Within a critical biaxial strain of 4%, the type-II1 band alignment can be maintained, and a high PCE of 20.80% is achieved at a tensile strain (ε) of 4%. Our results may suggest a potential optoelectronic application direction for the InS/ZnIn2S4 heterostructure and offer effective means to enhance its optoelectronic device performance.

Bayesian Optimization for Controlled Chemical Vapor Deposition Growth of WS2

We applied Bayesian optimization (BO), a machine learning (ML) technique, to optimize the growth conditions of monolayer WS2 using photoluminescence (PL) intensity as the objective function. Through iterative experiments guided by BO, an improvement of 86.6% in PL intensity is achieved within 13 optimization rounds. Statistical analysis revealed the relationships between growth conditions and PL intensity, highlighting the importance of critical conditions, including the tungsten source concentration and Ar flow rate. Furthermore, the effectiveness of BO is demonstrated by comparison with random search, showing its ability to converge to optimal conditions with fewer iterations. This research highlights the potential of ML-driven approaches in accelerating material synthesis and optimization processes, paving the way for advances in two-dimensional (2D) material-based technologies.

Editorial for the Special Issue on Integrated Photonics and Optoelectronics

Integrated photonic and optoelectronic technologies have become powerful tools in the drive to develop devices that are much smaller and more highly integrated, with lower power consumption and higher functionality [...].

2D Atomic-Molecular Heterojunctions toward Brainoid Applications

Brainoid computing using 2D atomic crystals and their heterostructures, by emulating the human brain's remarkable efficiency and minimal energy consumption in information processing, poses a formidable solution to the energy-efficiency and processing speed constraints inherent in the von Neumann architecture. However, conventional 2D material based heterostructures employed in brainoid devices are beset with limitations, performance uniformity, fabrication intricacies, and weak interfacial adhesion, which restrain their broader application. The introduction of novel 2D atomic-molecular heterojunctions (2DAMH), achieved through covalent functionalization of 2D materials with functional molecules, ushers in a new era for brain-like devices by providing both stability and tunability of functionalities. This review chiefly delves into the electronic attributes of 2DAMH derived from the synergy of polymer materials with 2D materials, emphasizing the most recent advancements in their utilization within memristive devices, particularly their potential in replicating the functionality of biological synapses. Despite ongoing challenges pertaining to precision in modification, scalability in production, and the refinement of underlying theories, the proliferation of innovative research is actively pursuing solutions. These endeavors illuminate the vast potential for incorporating 2DAMH within brain-inspired intelligent systems, highlighting the prospect of achieving a more efficient and energy-conserving computing paradigm.

Nonlinear Optical Properties of 2D Materials and their Applications

2D materials are a subject of intense research in recent years owing to their exclusive photoelectric properties. With giant nonlinear susceptibility and perfect phase matching, 2D materials have marvelous nonlinear light-matter interactions. The nonlinear optical properties of 2D materials are of great significance to the design and analysis of applied materials and functional devices. Here, the fundamental of nonlinear optics (NLO) for 2D materials is introduced, and the methods for characterizing and measuring second-order and third-order nonlinear susceptibility of 2D materials are reviewed. Furthermore, the theoretical and experimental values of second-order susceptibility χ(2) and third-order susceptibility χ(3) are tabulated. Several applications and possible future research directions of second-harmonic generation (SHG) and third-harmonic generation (THG) for 2D materials are presented.

Silicon Waveguide-Integrated Platinum Telluride Midinfrared Photodetector with High Responsivity and High Speed

The detection of mid-infrared light, covering a variety of molecular vibrational spectra, is critical for both civil and military purposes. Recent studies have highlighted the potential of two-dimensional topological semimetals for mid-infrared detection due to their advantages, including van der Waals (vdW) stacking and gapless electronic structures. Among them, mid-infrared photodetectors based on type-II Dirac semimetals have been less studied. In this paper, we present a silicon waveguide integrated type-II Dirac semimetal platinum telluride (PtTe2) mid-infrared photodetector, and further improve detection performance by using PtTe2-graphene heterostructure. For the fabricated silicon waveguide-integrated PtTe2 photodetector, with an external bias voltage of -10 mV and an input optical power of 86 nW, the measured responsivity is 2.7 A/W at 2004 nm and a 3 dB bandwidth of 0.6 MHz is realized. For the fabricated silicon waveguide-integrated PtTe2-graphene photodetector, as the external bias voltage and input optical power are 0.5 V and 0.13 μW, a responsivity of 5.5 A/W at 2004 nm and a 3 dB bandwidth of 35 MHz are obtained. An external quantum efficiency of 119% can be achieved at an input optical power of 0.376 μW.

Out-of-plane Emission Dipole of Second Harmonic Generation in Odd- and Even-layered vdWs Janus Nb3SeI7

Integration of atomically thin nonlinear optical (NLO) devices demands an out-of-plane (OP) emission dipole of second harmonic generation (SHG) to enhance the spontaneous emission for nanophotonics. However, the research on van der Waals (vdWs) materials with an OP emission dipole of SHG is still in its infancy. Here, by coupling back focal plane (BFP) imaging with numerical simulations and density functional theory (DFT) calculations, we demonstrate that vdWs Janus Nb3SeI7, ranging from bulk to the monolayer limit, exhibits a dominant OP emission dipole of SHG owing to the breaking of the OP symmetry. Explicitly, even-layered Nb3SeI7 with C6v symmetry is predicted to exhibit a pure OP emission dipole attributed to the only second-order susceptibility coefficient χzxx. Meanwhile, although odd-layered Nb3SeI7 with C3v symmetry has both OP and IP dipole components (χzxx and χyyy), the value of χzxx is 1 order of magnitude greater than that of χyyy, leading to an approximate OP emission dipole of SHG. Moreover, the crystal symmetry and OP emission dipole can be preserved under hydrostatic pressure, accompanied by the enhanced χzxx and the resulting 3-fold increase in SHG intensity. The reported stable OP dipole in 2D vdWs Nb3SeI7 can facilitate the rapid development of chip-integrated NLO devices.

Strong Covalent Coupling in Vertically Layered SnSe2/PTAA Heterojunctions Enabled High Performance Inorganic-Organic Hybrid Photodetectors

Controllable large-scale integration of two-dimensional (2D) materials with organic semiconductors and the realization of strong coupling between them still remain challenging. Herein, we demonstrate a wafer-scale, vertically layered SnSe2/PTAA heterojunction array with high light-trapping ability via a low-temperature molecular beam epitaxy method and a facile spin-coating process. Conductive probe atomic force microscopy (CP-AFM) measurements reveal strong rectification and photoresponse behavior in the individual SnSe2 nanosheet/PTAA heterojunction. Theoretical analysis demonstrates that vertically layered SnSe2/PTAA heterojunctions exhibit stronger C-Se covalent coupling than that of the conventional tiled type, which could facilitate more efficient charge transfer. Benefiting from these advantages, the SnSe2/PTAA heterojunction photodetectors with an optimized PTAA concentration show high performance, including a responsivity of 41.02 A/W, an external quantum efficiency of 1.31 × 104%, and high uniformity. The proposed approach for constructing large-scale 2D inorganic-organic heterostructures represents an effective route to fabricate high-performance broadband photodetectors for integrated optoelectronic systems.

All van der Waals Semiconducting PtSe2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes

Contact resistance is a multifaceted challenge faced by the 2D materials community. Large Schottky barrier heights and gap-state pinning are active obstacles that require an integrated approach to achieve the development of high-performance electronic devices based on 2D materials. In this work, we present semiconducting PtSe2 field effect transistors with all-van-der-Waals electrode and dielectric interfaces. We use graphite contacts, which enable high ION/IOFF ratios up to 109 with currents above 100 μA μm-1 and mobilities of 50 cm2 V-1 s-1 at room temperature and over 400 cm2 V-1 s-1 at 10 K. The devices exhibit high stability with a maximum hysteresis width below 36 mV nm-1. The contact resistance at the graphite-PtSe2 interface is found to be below 700 Ω μm. Our results present PtSe2 as a promising candidate for the realization of high-performance 2D circuits built solely with 2D materials.

Raman scattering owing to magneto-polaron states in monolayer transition metal dichalcogenides

Magneto-optical measurements are fundamental research tools that allow for studying the hitherto unexplored optical transitions and the related applications of topological two-dimensional (2D) transition metal dichalcogenides (TMDs). A theoretical model is developed for the first-order magneto-resonant Raman scattering in a monolayer of TMD. A significant number of avoided crossing points involving optical phonons in the magneto-polaron (MP) spectrum, a superposition of the electron and hole states in the excitation branches, and their manifestations in optical transitions at various light scattering configurations are unique features for these 2D structures. The Raman intensity reveals three resonant splittings of double avoided-crossing levels. The three excitation branches are present in the MP spectrum provoked by the coupling of the Landau levels in the conduction and valence bands via an out-of-plane A 1 -optical phonon mode. The energy gaps at the anticrossing points in the MP scattering spectrum are revealed as a function of the electron and hole optical deformation potential constants. The resonant MP Raman scattering efficiency profile allows for quantifying the relative contribution of the conduction and valence bands in the formation of MPs. The results obtained are a guideline for controlling MP effects on the magneto-optical properties of TMD semiconductors, which open pathways to novel optoelectronic devices based on 2D TMDs.

Hydrogels in Gene Delivery Techniques for Regenerative Medicine and Tissue Engineering

Hydrogels are 3D networks swollen with water. They are biocompatible, strong, and moldable and are emerging as a promising biomedical material for regenerative medicine and tissue engineering to deliver therapeutic genes. The excellent natural extracellular matrix simulation properties of hydrogels enable them to be co-cultured with cells or enhance the expression of viral or non-viral vectors. Its biocompatibility, high strength, and degradation performance also make the action process of carriers in tissues more ideal, making it an ideal biomedical material. It has been shown that hydrogel-based gene delivery technologies have the potential to play therapy-relevant roles in organs such as bone, cartilage, nerve, skin, reproductive organs, and liver in animal experiments and preclinical trials. This paper reviews recent articles on hydrogels in gene delivery and explains the manufacture, applications, developmental timeline, limitations, and future directions of hydrogel-based gene delivery techniques.

Klein Tunneling in β12 Borophene

Motivated by the recent observation of Klein tunneling in 8-Pmmn borophene, we delve into the phenomenon in β12 borophene by employing tight-binding approximation theory to establish a theoretical mode. The tight-binding model is a semi-empirical method for establishing the Hamiltonian based on atomic orbitals. A single cell of β12 borophene contains five atoms and multiple central bonds, so it creates the complexity of the tight-binding model Hamiltonian of β12 borophene. We investigate transmission across one potential barrier and two potential barriers by changing the width and height of barriers and the distance between two potential barriers. Regardless of the change in the barrier heights and widths, we find the interface to be perfectly transparent for normal incidence. For other angles of incidence, perfect transmission at certain angles can also be observed. Furthermore, perfect and all-angle transmission across a potential barrier takes place when the incident energy approaches the Dirac point. This is analogous to the "super", all-angle transmission reported for the dice lattice for Klein tunneling across a potential barrier. These findings highlight the significance of our theoretical model in understanding the complex dynamics of Klein tunneling in borophene structures.

Giant Negative Photoresponse in van der Waals Graphene/AgBiP2Se6/Graphene Trilayer Heterostructures

The positive photoconductive (PPC) effect is a well-established primary detection mechanism employed by photodetectors. In contrast, the negative photoconductive (NPC) effect is not extensively investigated thus far, and research on the NPC effect is still in its early stage. Herein, a quaternary van der Waals material, AgBiP2Se6 atomic layers, is discovered to achieve a giant NPC effect. Through experimental observations in a Graphene/AgBiP2Se6/ Graphene-based vertical photodetector, an irreversible conversion is identified from common PPC photoresponse to atypical NPC photoresponse. Notably, this device demonstrates an exceptionally high negative responsivity (R) of 4.9 × 105 A W-1, surpassing the previous records for NPC photodetectors. Additionally, it exhibits remarkable optoelectronic performances, including an external quantum efficiency of 1.3 × 108% and a detectivity (D) of 3.60 × 1012 Jones. The exceptionally high NPC photoresponse observed in this device can be attributed to the swift suppression of photogenerated free carriers at robust recombination centers situated at significant depths, induced by the elevated drain-source voltage bias. The remarkably high NPC photoresponse also positions AgBiP2Se6 as a promising 2D material for multifunctional optoelectronic devices and an excellent platform for systematic exploration of the NPC effect.

Interfacial Charge Transfer for Enhancing Nonlinear Saturable Absorption in WS2/graphene Heterostructure

Interlayer charge-transfer (CT) in 2D atomically thin vertical stacks heterostructures offers an unparalleled new approach to regulation of device performance in optoelectronic and photonics applications. Despite the fact that the saturable absorption (SA) in 2D heterostructures involves highly efficient optical modulation in the space and time domain, the lack of explicit SA regulation mechanism at the nanoscale prevents this feature from realizing nanophotonic modulation. Here, the enhancement of SA response via CT in WS2/graphene vertical heterostructure is proposed and the related mechanism is demonstrated through simulations and experiments. Leveraging this mechanism, CT-induced SA enhancement can be expanded to a wide range of nonlinear optical modulation applications for 2D materials. The results suggest that CT between 2D heterostructures enables efficient nonlinear optical response regulation.

Local modulation of Au/MoS2 Schottky barriers using a top ZnO nanowire gate for high-performance photodetection

Schottky junctions are commonly used for fabricating heterojunction-based 2D transition metal dichalcogenide (TMD) photodetectors, characteristically offering a wide detection range, high sensitivity and fast response. However, these devices often suffer from reduced detectivity due to the high dark current, making it challenging to discover a simple and efficient universal way to improve the photoelectric performances. Here, we demonstrate a novel approach for integrating ZnO nanowire gates into a MoS2-Au Schottky junction to improve the photoelectric performances of photodetectors by locally controlling the Schottky barrier. This strategy remarkably reduces the dark current level of the device without affecting its photocurrent and the Schottky detectivity can be modified to a maximum detectivity of 1.4 × 1013 Jones with -20 V NG bias. This work provides potential possibilities for tuning the band structure of other materials and optimizing the performance of heterojunction photodetectors.

Strong In-Plane Optoelectronic Anisotropy and Polarization Sensitivity in Low-Symmetry 2D Violet Phosphorus

Anisotropic optoelectronics based on low-symmetry two-dimensional (2D) materials hold immense potential for enabling multidimensional visual perception with improved miniaturization and integration capabilities, which has attracted extensive interest in optical communication, high-gain photoswitching circuits, and polarization imaging fields. However, the reported in-plane anisotropic photocurrent and polarized dichroic ratios are limited, hindering the achievement of high-performance anisotropic optoelectronics. In this study, we introduce novel low-symmetry violet phosphorus (VP) with a unique tubular cross-linked structure into this realm, and the corresponding anisotropic optical and optoelectronic properties are investigated both experimentally and theoretically for the first time. Remarkably, our prepared VP-based van der Waals phototransistor exhibits significant optoelectronic anisotropies with a giant in-plane anisotropic photocurrent ratio exceeding 10 and a comparable polarized dichroic ratio of 2.16, which is superior to those of most reported 2D counterparts. Our findings establish VP as an exceptional candidate for anisotropic optoelectronics, paving the way for future multifunctional applications.

Dual Coupled Long-Range Hybrid Surface Plasmon Polariton Waveguide for Sub-Wavelength Confinement

In this paper, a long-range hybrid waveguide for subwavelength confinement based on double SPP coupling is proposed. The hybrid waveguide consists of a metal-based cylindrical hybrid waveguide and a silver nanowire. There are two coupling regions in the waveguide structure that enhance mode coupling. Strong mode coupling enables the waveguide to exhibit both a small effective mode area (0.01) and an extremely long transmission length (700 μm). The figure of merit (FOM) of the waveguide can be as high as 4000. In addition, the cross-sectional area of the waveguide is only 500 nm × 500 nm, allowing optical operation in the subwavelength range, which helps enhance the miniaturization of optoelectronic devices. The excellent characteristics of the hybrid waveguide make it have potential applications in photoelectric integrated systems.

Electronic and magnetic properties of layered M3Si2Te6(M = alkaline earth and transition metals)

Recently, a new layered material, Mn3Si2Te6, was identified to be a semiconductor with nodal-line topological property and ferrimagnetic ground state. In this work, we propose a series of structures, M3Si2Te6(M = alkaline earth and transition metals), and systematically investigate their mechanical, magnetic and electronic properties, and the strain effect to enrich the family of the layered materials for practical applications. We find 13 stable M3Si2Te6, including 5 semiconductors (M = Ca, Sr, Fe, Ru and Os) and 8 metals (M = Sc, Ti, Nb, Ta, Cr, Mo, W and Tc). Two structures (M = Ti and Cr) are antiferromagnetic (AFM), while other structures are non-magnetic (NM). Similar to Mn3Si2Te6, the AFM structures exhibit magnetic anisotropy energies (MAEs) and semiconductors have anisotropic electron effective masses. We further show that compressions along thez-axis can effectively tune the electronic and magnetic properties, such as the semiconductor-metal and NM-AFM transition in Fe3Si2Te6, the two-fold degeneracy of the valence band maximums in Sr3Si2Te6, as well as the reduced MAE for all magnetic structures. These results demonstrate the diverse properties of the layered M3Si2Te6family and provide promising theoretical predictions for the future design of new layered materials.

Two-dimensional graphitic metal carbides: structure, stability and electronic properties

Via first-principles computational modeling and calculations, we propose a new class of two-dimensional (2D) atomically thin crystals that contain metal-C3(MC3) moieties periodically distributed in a graphenic lattice, which we refer to as 2D graphitic metal carbides (g-MCs). Most g-MCs are dynamically stable as verified by the calculated phonon spectra. Our detailed chemical bonding analyzes reveal that the high stability of g-MCs can be attributed to a unique bonding feature, which manifests as the carbon-backbone-mediated metal-metal interactions. These analyzes provide new insights for understanding the stability of 2D materials. It is found that the calculated electronic band gaps and magnetic moments (per unit cell) of g-MCs can range from 0 to 1.30 eV and 0 to 4.40μB, respectively. Highly tunable electronic properties imply great potential of 2D g-MCs in various applications. As an example, we show that 2D g-MnC can be an excellent electrocatalyst towards CO2reductive reaction for the formation of formic acid with an exceptionally high loading of Mn atoms (∼43 wt%). We expect this work to simulate new experiments for fabrication and applications of g-MCs.

High-responsivity and high-speed black phosphorus photodetectors integrated with proton exchanged thin-film lithium niobate waveguides

We present a high-performance broadband (450-1550 nm) black phosphorus photodetector based on a thin-film lithium niobate waveguide. The waveguides are fabricated by the proton exchange method with flat surfaces, which reduces the stress and deformation of two-dimensional materials. At a wavelength of 1550 nm, the photodetector simultaneously achieves a high responsivity and wide bandwidth, with a responsivity as high as 147 A/W (at an optical power of 17 nW), a 3-dB bandwidth of 0.86 GHz, and a detectivity of 3.04 × 1013 Jones. Our photodetector exhibits one of the highest responsivity values among 2D material-integrated waveguide photodetectors.

Exfoliation of MoS2 by zero-valent transition metal intercalation

Exfoliation of bulk molybdenum disulfide (MoS₂) into few-layered nanosheets is achieved with the assistance of zero-valent transition metal (Co⁰, Ni⁰, Cu⁰) intercalation. The as-prepared MoS₂ nanosheets are characterized to consist of 1T- and 2H-phases with an enhanced electrocatalytic hydrogen evolution reaction (HER) activity. This work provides a novel strategy to prepare 2D MoS₂ nanosheets using mild reductive reagents, which is expected to avoid the undesired structural damage from conventional chemical exfoliation.

Review on two-dimensional material-based field-effect transistor biosensors: accomplishments, mechanisms, and perspectives

Field-effect transistor (FET) is regarded as the most promising candidate for the next-generation biosensor, benefiting from the advantages of label-free, easy operation, low cost, easy integration, and direct detection of biomarkers in liquid environments. With the burgeoning advances in nanotechnology and biotechnology, researchers are trying to improve the sensitivity of FET biosensors and broaden their application scenarios from multiple strategies. In order to enable researchers to understand and apply FET biosensors deeply, focusing on the multidisciplinary technical details, the iteration and evolution of FET biosensors are reviewed from exploring the sensing mechanism in detecting biomolecules (research direction 1), the response signal type (research direction 2), the sensing performance optimization (research direction 3), and the integration strategy (research direction 4). Aiming at each research direction, forward perspectives and dialectical evaluations are summarized to enlighten rewarding investigations.

Pressure effect on the physical, mechanical, and thermal properties of ternary halide perovskite AgCaCl3: a first-principles study

CONTEXT AND RESULTS

As an inorganic halide perovskite material, AgCaCl₃, characterized by its high stability and environmental friendliness, is considered a potential candidate for major applications in optoelectronics and lens manufacturing. This work aimed to determine the electronic properties such as density of state (DOS) and band structure (BS) of AgCaCl3. The results showed that the material has an indirect band gap almost invariably at 1.5 eV in the pressure range studied. The dielectric function [Formula: see text], absorption coefficient [Formula: see text], optical conductivity [Formula: see text], reflectivity [Formula: see text], and the refractive index [Formula: see text] showed clearly that the perovskite AgCaCl₃ preserved its optical characteristics within the chosen pressure range investigated. The calculated elastic constants C₁₁, C₁₂, and C₁₄ as dynamic stability criteria for the elastic moduli such as bulk modulus (B), shear modulus (G), Young's modulus (Y), Poisson's ratio ([Formula: see text]), and anisotropy factor (A) showed that the material is a ductile plastic. Debye temperature ([Formula: see text]), isobaric and isochoric heat capacities (C_P, C_V), coefficient of the thermal expansion (α), Gibbs free energy (G), and entropy (S) were also studied. The results obtained provide a theoretical basis for experimental work and offer the possibility of future industrial applications of AgCaCl₃.

COMPUTATIONAL AND THEORETICAL TECHNIQUES

Density functional theory (DFT) calculations as implemented in the Wien2K code were used to study the mechanical and thermal properties of AgCaCl₃ perovskite over a pressure range. Lattice parameters, electronic, and optical properties are optimized with the approximation of the generalized gradient of the Perdew-Burke-Ernzerhof function (PBE-GGA) function. The mechanical and thermodynamic properties were calculated using ElaStic and Gibbs2 codes, and the properties of AgCaCl₃ over the pressure range investigated were predicted.

Defect Healing in Graphene via Rapid Thermal Annealing with Polymeric "Nanobandage"

Overcoming throughput challenges in current graphene defect healing processes, such as conventional thermal annealing, is crucial for realizing post-silicon device fabrication. Herein, a new time- and energy-efficient method for defect healing in graphene is reported, utilizing polymer-assisted rapid thermal annealing (RTA). In this method, a nitrogen-rich, polymeric "nanobandage" is coated directly onto graphene and processed via RTA at 800 °C for 15 s. During this process, the polymer matrix is cleanly degraded, while nitrogen released from the nanobandage can diffuse into graphene, forming nitrogen-doped healed graphene. To study the influence of pre-existing defects on graphene healing, lattice defects are purposefully introduced via electron beam irradiation and investigated by Raman microscopy. X-ray photoelectron spectroscopy reveals successful healing of graphene, observing a maximum doping level of 3 atomic nitrogen % in nanobandage-treated samples from a baseline of 0-1 atomic % in non-nanobandage treated samples. Electrical transport measurements further indicate that the nanobandage treatment recovers the conductivity of scanning electron microscope-treated defective graphene at ≈85%. The reported polymer-assisted RTA defect healing method shows promise for healing other 2D materials with other dopants by simply changing the chemistry of the polymeric nanobandage.

Investigations of Optical Functions and Optical Transitions of 2D Semiconductors by Spectroscopic Ellipsometry and DFT

Optical functions and transitions are essential for a material to reveal the light-matter interactions and promote its applications. Here, we propose a quantitative strategy to systematically identify the critical point (CP) optical transitions of 2D semiconductors by combining the spectroscopic ellipsometry (SE) and DFT calculations. Optical functions and CPs are determined by SE, and connected to DFT band structure and projected density of states via equal-energy and equal-momentum lines. The combination of SE and DFT provides a powerful tool to investigate the CP optical transitions, including the transition energies and positions in Brillouin zone (BZ), and the involved energy bands and carries. As an example, the single-crystal monolayer WS₂ is investigated by the proposed method. Results indicate that six excitonic-type CPs can be quantitatively distinguished in optical function of the monolayer WS₂ over the spectral range of 245-1000 nm. These CPs are identified as direct optical transitions from three highest valence bands to three lowest conduction bands at high symmetry points in BZ contributed by electrons in S-3p and W-5d orbitals. Results and discussion on the monolayer WS₂ demonstrate the effectiveness and advantages of the proposed method, which is general and can be easily extended to other materials.

Paper-based broadband flexible photodetectors with van der Waals materials

Layered metal chalcogenide materials are exceptionally appealing in optoelectronic devices thanks to their extraordinary optical properties. Recently, their application as flexible and wearable photodetectors have received a lot of attention. Herein, broadband and high-performance paper-based PDs were established in a very facile and inexpensive method by rubbing molybdenum disulfide and titanium trisulfide crystals on papers. Transferred layers were characterized by SEM, EDX mapping, and Raman analyses, and their optoelectronic properties were evaluated in a wavelength range of 405–810 nm. Although the highest and lowest photoresponsivities were respectively measured for TiS₃ (1.50 mA/W) and MoS₂ (1.13 μA/W) PDs, the TiS₃–MoS₂ heterostructure not only had a significant photoresponsivity but also showed the highest on/off ratio (1.82) and fast response time (0.96 s) compared with two other PDs. This advantage is due to the band offset formation at the heterojunction, which efficiently separates the photogenerated electron–hole pairs within the heterostructure. Numerical simulation of the introduced PDs also confirmed the superiority of TiS₃–MoS₂ heterostructure over the other two PDs and exhibited a good agreement with the experimental results. Finally, MoS₂ PD demonstrated very high flexibility under applied strain, but TiS₃ based PDs suffered from its fragility and experience a remarkable drain current reduction at strain larger than ± 0.33%. However, at lower strains, all PDs displayed acceptable performances.

Exciton tuning in monolayer WSe2 via substrate induced electron doping

We report large exciton tuning in WSe2 monolayers via substrate induced non-degenerate doping. We observe a redshift of ∼62 meV for the A exciton together with a 1-2 orders of magnitude photoluminescence (PL) quenching when the monolayer WSe2 is brought in contact with highly oriented pyrolytic graphite (HOPG) compared to dielectric substrates such as hBN and SiO2. As the evidence of doping from HOPG to WSe2, a drastic increase of the intensity ratio of trions to neutral excitons was observed. Using a systematic PL and Kelvin probe force microscopy (KPFM) investigation on WSe2/HOPG, WSe2/hBN, and WSe2/graphene, we conclude that this unique excitonic behavior is induced by electron doping from the substrate. Our results propose a simple yet efficient way for exciton tuning in monolayer WSe2, which plays a central role in the fundamental understanding and further device development.

Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe2 van der Waals Heterostructures for Excellent Photodetector and NO2 Gas Sensing Applications

Herein, we reported a unique photo device consisting of monolayer graphene and a few-layer rhenium diselenide (ReSe₂) heterojunction. The prepared Gr/ReSe₂-HS demonstrated an excellent mobility of 380 cm²/Vs, current on/off ratio ~ 10⁴, photoresponsivity (R ~ 74 AW^-1 @ 82 mW cm^-2), detectivity (D^* ~ 1.25 × 10¹¹ Jones), external quantum efficiency (EQE ~ 173%) and rapid photoresponse (rise/fall time ~ 75/3 µs) significantly higher to an individual ReSe₂ device (mobility = 36 cm² V^-1s^-1, Ion/Ioff ratio = 1.4 × 10⁵-1.8 × 10⁵, R = 11.2 AW^-1, D* = 1.02 × 10¹⁰, EQE ~ 26.1%, rise/fall time = 2.37/5.03 s). Additionally, gate-bias dependent Schottky barrier height (SBH) estimation for individual ReSe₂ (45 meV at V_bg = 40 V) and Gr/ReSe₂-HS (9.02 meV at V_bg = 40 V) revealed a low value for the heterostructure, confirming dry transfer technique to be successful in fabricating an interfacial defects-free junction. In addition, HS is fully capable to demonstrate an excellent gas sensing response with rapid response/recovery time (39/126 s for NO₂ at 200 ppb) and is operational at room temperature (26.85 °C). The proposed Gr/ReSe₂-HS is capable of demonstrating excellent electro-optical, as well as gas sensing, performance simultaneously and, therefore, can be used as a building block to fabricate next-generation photodetectors and gas sensors.

Stability & durability of self-driven photo-detective parameters based on Sn1-β Sb β Se (β = 0, 0.05, 0.10, 0.15, 0.20) ternary alloy single crystals

In the present investigation Sn1-β Sb β Se crystals are grown using the direct vapor transport method. The crystals after growth were analyzed by EDAX and XPS to confirm the elemental composition. The surface morphological properties were studied by scanning electron microscope, confirming a flat surface and layered growth of the Sn1-β Sb β Se crystals. The structural properties studied by X-ray diffraction and high-resolution transmission electron microscopy confirm the orthorhombic structure of the grown Sn1-β Sb β Se crystals. The Raman spectroscopic measurements evince the presence of B2g and Ag vibration modes. The PL intensity peak at ∼400 nm to 500 nm confirms the energy band gap. The indirect energy band gap of 1.18 eV was evaluated using Tauc plot by employing UV-visible spectroscopy making it a promising candidate for optoelectronic and photonic applications. The pulse photo response of pure and doped samples was studied under a monochromatic source of wavelength 670 nm and intensity of 30 mW cm-2 at zero biasing voltage firstly on day one and then the same samples were preserved for 50 days and the stability of the photodetectors was observed. Photodetector parameters such as rise time, decay time, photocurrent, responsivity, sensitivity, and detectivity were observed, and evaluated results are presented in this article.

Tuning Schottky Barrier of Single-Layer MoS2 Field-Effect Transistors with Graphene Electrodes

Two-dimensional materials have the potential to be applied in flexible and transparent electronics. In this study, single-layer MoS₂ field-effect transistors (FETs) with Au/Ti-graphene heteroelectrodes were fabricated to examine the effect of the electrodes on the electrical properties of the MoS₂ FETs. The contact barrier potential was tuned using an electric field. Asymmetrical gate behavior was observed owing to the difference between the MoS₂ FETs, specifically between the MoS₂ FETs with Au/Ti electrodes and those with graphene electrodes. The contact barrier of the MoS₂ FETs with Au/Ti electrodes did not change with the electric field. However, the contact barrier at the MoS₂-graphene interface could be modulated. The MoS₂ FETs with Au/Ti-graphene electrodes exhibited enhanced on/off ratios (~10² times) and electron mobility (~2.5 times) compared to the MoS₂ FETs with Au/Ti electrodes. These results could improve the understanding of desirable contact formation for high-performance MoS₂ FETs and provide a facile route for viable electronic applications.

Nano-engineering and nano-manufacturing in 2D materials: marvels of nanotechnology

Two-dimensional materials have attracted significant interest and investigation since the marvellous discovery of graphene. Due to their unique physical, mechanical and optical properties, van der Waals (vdW) materials possess extraordinary potential for application in future optoelectronics devices. Nano-engineering and nano-manufacturing in the atomically thin regime has further opened multifarious avenues to explore novel physical properties. Among them, moiré heterostructures, strain engineering and substrate manipulation have created numerous exotic and topological phenomena such as unconventional superconductivity, orbital magnetism, flexible nanoelectronics and highly efficient photovoltaics. This review comprehensively summarizes the three most influential techniques of nano-engineering in 2D materials. The latest development in the marvels of moiré structures in vdW materials is discussed; in addition, topological structures in layered materials and substrate engineering on the nanoscale are thoroughly scrutinized to highlight their significance in micro- and nano-devices. Finally, we conclude with remarks on challenges and possible future directions in the rapidly expanding field of nanotechnology and nanomaterial.

Boosting Li-Ion Diffusion Kinetics of Na2Ti6-xMoxO13 via Coherent Dimensional Engineering and Lattice Tailoring: An Alternative High-Rate Anode

Featured with an exposed active facet, favorable ion diffusion pathway, and tailorable interfacial properties, low-dimensional structures are extensively explored as alternative electroactive materials with game-changing redox properties. Through a stepwise "proton exchange-insertion-exfoliation" procedure, in this article, we develop Na₂Ti_6-xMo_xO₁₃ (NTMO) nanosheets with weakened out-of-plane bonding and in-plane Mo⁶⁺ doping of the tunnel structure. Real-time phase tracking of the laminated NTMO structures upon the lithiation/delithiation process suggests mitigated lattice variation; meanwhile, the kinetics simulation shows a mitigated Li-ion diffusion barrier along the [010] orientation. At an industrial-level areal capacity loading (2.5 mAh cm^-2), the NTMO electrode maintains robust cycling endurance (91% capacity retention for 2000 cycles) even at 40 C, as well as the high energy/power densities in the as-constructed NTMO||LiFePO₄ full cell prototype. The dimensional and lattice modifications presented in this study thus encourage further exploration of the tailored cation diffusion pathway for the construction of fast-charging batteries.

Engineering van der Waals Materials for Advanced Metaphotonics

The outstanding chemical and physical properties of 2D materials, together with their atomically thin nature, make them ideal candidates for metaphotonic device integration and construction, which requires deep subwavelength light-matter interaction to achieve optical functionalities beyond conventional optical phenomena observed in naturally available materials. In addition to their intrinsic properties, the possibility to further manipulate the properties of 2D materials via chemical or physical engineering dramatically enhances their capability, evoking new science on light-matter interaction, leading to leaped performance of existing functional devices and giving birth to new metaphotonic devices that were unattainable previously. Comprehensive understanding of the intrinsic properties of 2D materials, approaches and capabilities for chemical and physical engineering methods, the resulting property modifications and novel functionalities, and applications of metaphotonic devices are provided in this review. Through reviewing the detailed progress in each aspect and the state-of-the-art achievement, insightful analyses of the outstanding challenges and future directions are elucidated in this cross-disciplinary comprehensive review with the aim to provide an overall development picture in the field of 2D material metaphotonics and promote rapid progress in this fast emerging and prosperous field.

The Electronic Properties of g−ZnO Modulated by Organic Molecules Adsorption

Molecular doping is an excellent instrument to modify the electronic properties of two−dimensional materials. In our work, the structure and electronic properties of the adsorption systems of g−ZnO adsorbed by organic molecules (including Tetracyanoethylene (TCNE), Tetracyanoquinodimethane (TCNQ), and Tetrahydrofulvalene (TTF)) were investigated computationally using Density Functional Theory (DFT). The results showed that the TCNE and TCNQ, as electron receptors, doped the LUMO energy level above the valence band maximum (VBM) of the g−ZnO band structure, demonstrating effective p−type doping. The n−type doping of g−ZnO was obtained that the TTF molecules, as electron donors, doped the HOMO energy level below the conduction band minimum (CBM) of the band structure for g−ZnO. In addition, the TCNE, TCNQ, and TTF breathed additional holes or electrons into the monolayer g−ZnO, creating surface dipole moments between the g−ZnO and organic molecules, which caused work function to be adjustable, ranging from 3.871 eV to 5.260 eV. Our results prove that organic molecular doping was instrumental in improving the performance of g−ZnO−based nano−electronic devices, providing theoretical support for the fabrication of p−doping or n−doping nano−semiconductor components. The tunable range of field emission capability of g−ZnO−based electronic devices was also extended.

Picosecond electrical response in graphene/MoTe2 heterojunction with high responsivity in the near infrared region

Understanding the fundamental charge carrier dynamics is of great significance for photodetectors with both high speed and high responsivity. Devices based on two-dimensional (2D) transition metal dichalcogenides can exhibit picosecond photoresponse speed. However, 2D materials naturally have low absorption, and when increasing thickness to gain higher responsivity, the response time usually slows to nanoseconds, limiting their photodetection performance. Here, by taking time-resolved photocurrent measurements, we demonstrated that graphene/MoTe2 van der Waals heterojunctions realize a fast 10 ps photoresponse time owing to the reduced average photocurrent drift time in the heterojunction, which is fundamentally distinct from traditional Dirac semimetal photodetectors such as graphene or Cd3As2 and implies a photodetection bandwidth as wide as 100 GHz. Furthermore, we found that an additional charge carrier transport channel provided by graphene can effectively decrease the photocurrent recombination loss to the entire device, preserving a high responsivity in the near-infrared region. Our study provides a deeper understanding of the ultrafast electrical response in van der Waals heterojunctions and offers a promising approach for the realization of photodetectors with both high responsivity and ultrafast electrical response.

Exfoliation of MoS2 Nanosheets Enabled by a Redox-Potential-Matched Chemical Lithiation Reaction

Ion intercalation assisted exfoliation is the oldest and most popular method for the scalable synthesis of molybdenum disulfide (MoS₂) nanosheets. The commonly used organolithium reagents for Li⁺ intercalation are n-butyllithium (n-BuLi) and naphthalenide lithium (Nap-Li); however, the highly pyrophoric nature of n-BuLi and the overly reducing power of Nap-Li hinder their extensive application. Here, a novel organolithium reagent, pyrene lithium (Py-Li), which has intrinsic safe properties and a well-matched redox potential, is reported for the intercalation and exfoliation of MoS₂. The redox potential of Py-Li (0.86 V vs Li⁺/Li) is located just between the intercalation (1.13 V) and decomposition (0.55 V) potentials of bulk MoS₂, thus allowing precise Li⁺ intercalation to form a lamellar LiMoS₂ compound without undesirable structural damage. The lithiation reaction can be accomplished within 1 h at room temperature and the exfoliated nanosheets are almost single layer. This method also offers the advantages of low cost, high repeatability, and ease in realizing large-scale production.

Fabrication of Large-Area Short-Wave Infrared Array Photodetectors under High Operating Temperature by High Quality PtS2 Continuous Films

A narrow bandgap of a few layers of platinic disulfide (PtS2) has shown great advantages in large-area array photodetectors for wide spectra photodetection, which is necessary for infrared imaging and infrared sensing under extreme conditions. The photodetection performance of two dimensional materials is highly dependent on the crystalline quality of the film, especially under high operating temperatures. Herein, we developed large area uniform array photodetectors using a chemical vapor deposition grown on PtS2 films for short-wave infrared photodetection at high operating temperature. Due to the high uniformity and crystalline quality of as-grown large area PtS2 films, as-fabricated PtS2 field effect transistors have shown a broadband photo-response from 532 to 2200 nm with a wide working temperature from room temperature to 373 K. The photo-responsivity (R) and specific detectivity (D*) of room temperature and 373 K are about 3.20 A/W and 1.24 × 107 Jones, and 839 mA/W and 6.1 × 106 Jones, at 1550 nm, respectively. Our studies pave the way to create an effective strategy for fabricating large-area short-wave infrared (SWIR) array photodetectors with high operating temperatures using chemical vapor deposition (CVD) grown PtS2 films.

C7N6/Sc2CCl2 Weak van der Waals Heterostructure: A Promising Visible-Light-Driven Z-Scheme Water Splitting Photocatalyst with Interface Ultrafast Carrier Recombination

Designing and characterizing high-efficiency direct Z-scheme photocatalysts both from theoretical and experimental aspects still remain a big challenge. Here, based on extensive first-principles calculations combined with excited state dynamics simulations, we report that a weak van der Waals (vdW) C₇N₆/Sc₂CCl₂ heterostructure is a mediator-free direct Z-scheme photocatalyst for solar water splitting. Theoretical results clearly reveal that this heterostructure displays a nice light-harvesting performance extending to the near-infrared region. The relatively strong interfacial non-adiabatic coupling accelerates the interlayer carrier recombination in the time scale of sub-picoseconds. The well separated electrons and holes with a strong redox capacity make the hydrogen evolution reaction spontaneously occur on the C₇N₆ surface and the oxygen evolution reaction on the Se-doped Sc₂CCl₂ surface, respectively, when the proposed heterostructure is radiated with solar light.

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

2D layered materials (2DLMs) have come under the limelight of scientific and engineering research and broke new ground across a broad range of disciplines in the past decade. Nevertheless, the members of stoichiometric 2DLMs are relatively limited. This renders them incompetent to fulfill the multitudinous scenarios across the breadth of electronic and optoelectronic applications since the characteristics exhibited by a specific material are relatively monotonous and limited. Inspiringly, alloying of 2DLMs can markedly broaden the 2D family through composition modulation and it has ushered a whole new research domain: 2DLM alloy nano-electronics and nano-optoelectronics. This review begins with a comprehensive survey on synthetic technologies for the production of 2DLM alloys, which include chemical vapor transport, chemical vapor deposition, pulsed-laser deposition, and molecular beam epitaxy, spanning their development, as well as, advantages and disadvantages. Then, the up-to-date advances of 2DLM alloys in electronic devices are summarized. Subsequently, the up-to-date advances of 2DLM alloys in optoelectronic devices are summarized. In the end, the ongoing challenges of this emerging field are highlighted and the future opportunities are envisioned, which aim to navigate the coming exploration and fully exert the pivotal role of 2DLMs toward the next generation of electronic and optoelectronic devices.

Short-wavelength infrared (SWIR) photodetector based on multi-layer 2D GaGeTe

Recent theoretical studies proposed that two-dimensional (2D) GaGeTe crystals have promising high detection sensitivity at infrared wavelengths and can offer ultra-fast operation. This can be attributed to their small optical bandgap and high carrier mobility. However, experimental studies on GaGeTe in the infrared region are lacking and this exciting property has not been explored yet. In this work, we demonstrate a short-wavelength infrared (SWIR) photodetector based on a multilayer (ML) GaGeTe field-effect transistor (FET). Fabricated devices show a p-type behavior at room temperature with a hole field-effect mobility of 8.6 - 20 cm² V^-1s^-1. Notably, under 1310 nm illumination, the photo responsivities and noise equivalent power of the detectors with 65 nm flake thickness can reach up to 57 A/W and 0.1 nW/Hz^1/2, respectively, at a drain-source bias (V_ds) = 2 V. The frequency responses of the photodetectors were also measured with a 1310 nm intensity-modulated light. Devices exhibit a response up to 100 MHz with a 3dB cut-off frequency of 0.9 MHz. Furthermore, we also tested the dependence of the device frequency response on the applied bias and gate voltages. These early experimental findings stimulate the potential use of multilayer GaGeTe for highly sensitive and ultrafast photodetection applications.