Nanoscale Ferroelectric Characterization with Heterodyne Megasonic Piezoresponse Force Microscopy

Flexoelectricity Modulated Electron Transport of 2D Indium Oxide

The phenomenon of flexoelectricity, wherein mechanical deformation induces alterations in the electron configuration of metal oxides, has emerged as a promising avenue for regulating electron transport. Leveraging this mechanism, stress sensing can be optimized through precise modulation of electron transport. In this study, the electron transport in 2D ultra-smooth In2O3 crystals is modulated via flexoelectricity. By subjecting cubic In2O3 (c-In2O3) crystals to significant strain gradients using an atomic force microscope (AFM) tip, the crystal symmetry is broken, resulting in the separation of positive and negative charge centers. Upon applying nano-scale stress up to 100 nN, the output voltage and power values reach their maximum, e.g. 2.2 mV and 0.2 pW, respectively. The flexoelectric coefficient and flexocoupling coefficient of c-In2O3 are determined as ≈0.49 nC m-1 and 0.4 V, respectively. More importantly, the sensitivity of the nano-stress sensor upon c-In2O3 flexoelectric effect reaches 20 nN, which is four to six orders smaller than that fabricated with other low dimensional materials based on the piezoresistive, capacitive, and piezoelectric effect. Such a deformation-induced polarization modulates the band structure of c-In2O3, significantly reducing the Schottky barrier height (SBH), thereby regulating its electron transport. This finding highlights the potential of flexoelectricity in enabling high-performance nano-stress sensing through precise control of electron transport.

Electron-beam writing of a relaxor ferroelectric polymer for multiplexing information storage and encryption

To meet the strong demand for high-level encryption security, several efforts have been focused on developing new encryption techniques with high density and data security. Herein we employed a template-free electron beam lithography (EBL) technique to write various nanopatterns on poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CTFE)) films and applied it to electron-beam/electric multiplexing memory. Furthermore, electron beams can arbitrarily tailor down the domain structure evolutions and dipole directions, as proved by a combination of AFM-IR and PFM. Finally, our devices could function concurrently as an electron-beam write-only-memory (EB-WOM) and FeRAM, where the information could be encoded with the metastable phase evolutions from the ferroelectric phase to the paraelectric phase and variable bi-level ferroelectric signals. Our systematic study provides an inspiring idea for the design of information encryption devices with high-security requirements in flexible electronic fields.

Polarization Alignment in Polycrystalline BiFeO3 Photoelectrodes for Tunable Band Bending

Polarization in a semiconductor can modulate the band bending via the depolarization electric field (EdP), subsequently tuning the charge separation and transfer (CST) process in photoelectrodes. However, the random orientation of dipole moments in many polycrystalline semiconductor photoelectrodes leads to negligible polarization effect. How to effectively align the dipole moments in polycrystalline photoelectrodes into the same direction to maximize the polarization is still to be developed. Herein, we report that the dipole moments in a ferroelectric BiFeO3 photoelectrode can be controlled under external poling, resulting in a tunable CST efficiency. A negative bias of -40 voltage (V) poling to the photoelectrode leads to an over 110% increase of the CST efficiency, while poling at +40 V, the CST efficiency is reduced to only 41% of the original value. Furthermore, a nearly linear relationship between the external poling voltage and surface potential is discovered. The findings here provide an effective method in tuning the band bending and charge transfer of the emerging ferroelectricity driven solar energy conversion.

Emerging Halide Perovskite Ferroelectrics

Halide perovskites have gained tremendous attention in the past decade owing to their excellent properties in optoelectronics. Recently, a fascinating property, ferroelectricity, has been discovered in halide perovskites and quickly attracted widespread interest. Compared with traditional perovskite oxide ferroelectrics, halide perovskites display natural advantages such as structural softness, low weight, and easy processing, which are highly desirable in applications pursuing miniaturization and flexibility. This review focuses on the current research progress in halide perovskite ferroelectrics, encompassing the emerging materials systems and their potential applications in ferroelectric photovoltaics, self-powered photodetection, and X-ray detection. The main challenges and possible solutions in the future development of halide perovskite ferroelectric materials are also attempted to be pointed out.

In Situ Quantification of Strain-Induced Piezoelectric Potential of Dynamically Bending ZnO Microwires

The piezoelectric properties of semiconductor micro/nanowires (M/NWs) are crucial for optimizing semiconductors' electronic structure and carrier dynamics. However, the dynamic characterization of the piezoelectric properties of M/NWs remains challenging. Here, a Kelvin probe force microscopy technique based on a dual-probe atomic force microscope is developed to achieve in situ piezoelectric potential measurements of dynamic bending MWs. This technique can not only characterize the surface potential on different crystal faces of ZnO MWs in a natural state through controllable axial rotation, but also investigate the piezoelectric potential of the dynamically bending flake-like ZnO MW at different points and under different strain loads. The results show that the surface potentials of different faces/positions of the ZnO MWs are varied significantly, and determine that the quasi-static conditions piezo-strain factor of the flake-like ZnO MW is 0.28 V/%, while the factor was 0.14 V/% under low-frequency (⩽5 Hz) sinusoidal strain loading. This work provides a significant methodology to further study piezoelectric materials, and it aims to facilitate their applications in piezoelectric devices and systems.

The Ferroelectric-Ferroelastic Debate about Metal Halide Perovskites

Metal halide perovskites (MHPs) are solution-processed materials with exceptional photoconversion efficiencies that have brought a paradigm shift in photovoltaics. The nature of the peculiar optoelectronic properties underlying such astounding performance is still controversial. The existence of ferroelectricity in MHPs and its alleged impact on photovoltaic activity have fueled an intense debate, in which unanimous consensus is still far from being reached. Here we critically review recent experimental and theoretical results with a two-fold objective: we argue that the occurrence of ferroelectric domains is incompatible with the A-site cation dynamics in MHPs and propose an alternative interpretation of the experiments based on the concept of ferroelasticity. We further underline that ferroic behavior in MHPs would not be relevant at room temperature or higher for the physics of photogenerated charge carriers, since it would be overshadowed by competing effects like polaron formation and ion migration.

Breaking the Fundamental Limitations of Nanoscale Ferroelectric Characterization: Non-Contact Heterodyne Electrostrain Force Microscopy

Perceiving nanoscale ferroelectric phenomena from real space is of great importance for elucidating underlying ferroelectric physics. During the past decades, nanoscale ferroelectric characterization has mainly relied on the Piezoresponse Force Microscopy (PFM) invented in 1992, however, the fundamental limitations of PFM have made the nanoscale ferroelectric studies encounter significant bottlenecks. In this study, a high-resolution non-contact ferroelectric measurement, named Non-Contact Heterodyne Electrostrain Force Microscopy (NC-HEsFM), is introduced. It is demonstrated that NC-HEsFM can operate on multiple eigenmodes to perform ideal high-resolution ferroelectric domain mapping, standard ferroelectric hysteresis loop measurement, and controllable domain manipulation. By using a quartz tuning fork (QTF) sensor, multi-frequency operation, and heterodyne detection schemes, NC-HEsFM achieves a real non-contact yet non-destructive ferroelectric characterization with negligible electrostatic force effect and hence breaks the fundamental limitations of the conventional PFM. It is believed that NC-HEsFM can be extensively used in various ferroelectric or piezoelectric studies with providing substantially improved characterization performance. Meanwhile, the QTF-based force detection makes NC-HEsFM highly compatible for high-vacuum and low-temperature environments, providing ideal conditions for investigating the intrinsic ferroelectric phenomena with the possibility of achieving an atomically resolved ferroelectric characterization.

Correlating Crystallographic Orientation and Ferroic Properties of Twin Domains in Metal Halide Perovskites

Metal halide perovskite (MHP) solar cells have attracted worldwide research interest. Although it has been well established that grain, grain boundary, and grain facet affect MHPs optoelectronic properties, less is known about subgrain structures. Recently, MHP twin stripes, a subgrain feature, have stimulated extensive discussion due to the potential for both beneficial and detrimental effects of ferroelectricity on optoelectronic properties. Connecting the ferroic behavior of twin stripes in MHPs with crystal orientation will be a vital step to understand the ferroic nature and the effects of twin stripes. In this work, we studied the crystallographic orientation and ferroic properties of CH₃NH₃PbI₃ twin stripes, using electron backscatter diffraction (EBSD) and advanced piezoresponse force microscopy (PFM), respectively. Using EBSD, we discovered that the orientation relationship across the twin walls in CH₃NH₃PbI₃ is a 90° rotation about ⟨1̅1̅0⟩, with the ⟨030⟩ and ⟨111⟩ directions parallel to the direction normal to the surface. By careful inspection of CH₃NH₃PbI₃ PFM results including in-plane and out-of-plane PFM measurements, we demonstrate some nonferroelectric contributions to the PFM responses of this CH₃NH₃PbI₃ sample, suggesting that the PFM signal in this CH₃NH₃PbI₃ sample is affected by nonferroelectric and nonpiezoelectric forces. If there is piezoelectric response, it is below the detection sensitivity of our interferometric displacement sensor PFM (<0.615 pm/V). Overall, this work offers an integrated picture describing the crystallographic orientations and the origin of PFM signal of MHPs twin stripes, which is critical to understanding the ferroicity in MHPs.