1
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Huang H, Zha J, Xu S, Yang P, Xia Y, Wang H, Dong D, Zheng L, Yao Y, Zhang Y, Chen Y, Ho JC, Chan HP, Zhao C, Tan C. Precursor-Confined Chemical Vapor Deposition of 2D Single-Crystalline Se xTe 1-x Nanosheets for p-Type Transistors and Inverters. ACS NANO 2024; 18:17293-17303. [PMID: 38885180 DOI: 10.1021/acsnano.4c05323] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/20/2024]
Abstract
Two-dimensional (2D) tellurium (Te) is emerging as a promising p-type candidate for constructing complementary metal-oxide-semiconductor (CMOS) architectures. However, its small bandgap leads to a high leakage current and a low on/off current ratio. Although alloying Te with selenium (Se) can tune its bandgap, thermally evaporated SexTe1-x thin films often suffer from grain boundaries and high-density defects. Herein, we introduce a precursor-confined chemical vapor deposition (CVD) method for synthesizing single-crystalline SexTe1-x alloy nanosheets. These nanosheets, with tunable compositions, are ideal for high-performance field-effect transistors (FETs) and 2D inverters. The preformation of Se-Te frameworks in our developed CVD method plays a critical role in the growth of SexTe1-x nanosheets with high crystallinity. Optimizing the Se composition resulted in a Se0.30Te0.70 nanosheet-based p-type FET with a large on/off current ratio of 4 × 105 and a room-temperature hole mobility of 120 cm2·V-1·s-1, being eight times higher than thermally evaporated SexTe1-x with similar composition and thickness. Moreover, we successfully fabricated an inverter based on p-type Se0.30Te0.70 and n-type MoS2 nanosheets, demonstrating a typical voltage transfer curve with a gain of 30 at an operation voltage of Vdd = 3 V.
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Affiliation(s)
- Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Jiajia Zha
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong SAR, China
| | - Songcen Xu
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong SAR, China
| | - Peng Yang
- College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China
| | - Yunpeng Xia
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Huide Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Dechen Dong
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong SAR, China
| | - Long Zheng
- Department of Chemistry, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Hong Kong SAR, China
| | - Yuxuan Zhang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Ye Chen
- Department of Chemistry, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Hau Ping Chan
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Chunsong Zhao
- Huawei Technologies Co., LTD., Shenzhen 518129, China
| | - Chaoliang Tan
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong SAR, China
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2
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Zhou Z, Zhu J, Li L, Wang C, Zhang C, Du X, Wang X, Zhao G, Wang R, Li J, Lu Z, Zong Y, Sun Y, Rümmeli MH, Zou G. Monomolecular Membrane-Assisted Growth of Antimony Halide Perovskite/MoS 2 Van der Waals Epitaxial Heterojunctions with Long-Lived Interlayer Exciton. ACS NANO 2024; 18:17282-17292. [PMID: 38904992 DOI: 10.1021/acsnano.4c05293] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2024]
Abstract
Epitaxial growth stands as a key method for integrating semiconductors into heterostructures, offering a potent avenue to explore the electronic and optoelectronic characteristics of cutting-edge materials, such as transition metal dichalcogenide (TMD) and perovskites. Nevertheless, the layer-by-layer growth atop TMD materials confronts a substantial energy barrier, impeding the adsorption and nucleation of perovskite atoms on the 2D surface. Here, we epitaxially grown an inorganic lead-free perovskite on TMD and formed van der Waals (vdW) heterojunctions. Our work employs a monomolecular membrane-assisted growth strategy that reduces the contact angle and simultaneously diminishing the energy barrier for Cs3Sb2Br9 surface nucleation. By controlling the nucleation temperature, we achieved a reduction in the thickness of the Cs3Sb2Br9 epitaxial layer from 30 to approximately 4 nm. In the realm of inorganic lead-free perovskite and TMD heterojunctions, we observed long-lived interlayer exciton of 9.9 ns, approximately 36 times longer than the intralayer exciton lifetime, which benefited from the excellent interlayer coupling brought by direct epitaxial growth. Our research introduces a monomolecular membrane-assisted growth strategy that expands the diversity of materials attainable through vdW epitaxial growth, potentially contributing to future applications in optoelectronics involving heterojunctions.
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Affiliation(s)
- Zhicheng Zhou
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou 215123, China
| | - Juntong Zhu
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
| | - Lutao Li
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
| | - Chen Wang
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
| | - Changwen Zhang
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
| | - Xinyu Du
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
| | - Xiangyi Wang
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
| | - Guoxiang Zhao
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou 215123, China
| | - Ruonan Wang
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
| | - Jiating Li
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
| | - Zheng Lu
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
| | - Yi Zong
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou Jiangsu 215123, China
| | - Yinghui Sun
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
| | - Mark H Rümmeli
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou 215123, China
- Institute for Complex Materials, IFW Dresden, 20 Helmholtz Strasse Dresden 01069, Germany
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Sklodowskiej 34 Zabrze 41-819, Poland
- Institute of Environmental Technology, VSB-Technical University of Ostrava,17. Listopadu 15 Ostrava 70833, Czech Republic
| | - Guifu Zou
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
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3
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Li L, Zhang Q, Geng D, Meng H, Hu W. Atomic engineering of two-dimensional materials via liquid metals. Chem Soc Rev 2024; 53:7158-7201. [PMID: 38847021 DOI: 10.1039/d4cs00295d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/02/2024]
Abstract
Two-dimensional (2D) materials, known for their distinctive electronic, mechanical, and thermal properties, have attracted considerable attention. The precise atomic-scale synthesis of 2D materials opens up new frontiers in nanotechnology, presenting novel opportunities for material design and property control but remains challenging due to the high expense of single-crystal solid metal catalysts. Liquid metals, with their fluidity, ductility, dynamic surface, and isotropy, have significantly enhanced the catalytic processes crucial for synthesizing 2D materials, including decomposition, diffusion, and nucleation, thus presenting an unprecedented precise control over material structures and properties. Besides, the emergence of liquid alloy makes the creation of diverse heterostructures possible, offering a new dimension for atomic engineering. Significant achievements have been made in this field encompassing defect-free preparation, large-area self-aligned array, phase engineering, heterostructures, etc. This review systematically summarizes these contributions from the aspects of fundamental synthesis methods, liquid catalyst selection, resulting 2D materials, and atomic engineering. Moreover, the review sheds light on the outlook and challenges in this evolving field, providing a valuable resource for deeply understanding this field. The emergence of liquid metals has undoubtedly revolutionized the traditional nanotechnology for preparing 2D materials on solid metal catalysts, offering flexible possibilities for the advancement of next-generation electronics.
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Affiliation(s)
- Lin Li
- College of Chemistry, Tianjin Normal University, Tianjin 300387, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Qing Zhang
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Dechao Geng
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
| | - Hong Meng
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Wenping Hu
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
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4
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Maurtua C, Zide J, Chakraborty C. Molecular beam epitaxy and other large-scale methods for producing monolayer transition metal dichalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:383003. [PMID: 38901422 DOI: 10.1088/1361-648x/ad5a5d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2023] [Accepted: 06/20/2024] [Indexed: 06/22/2024]
Abstract
Transition metal dichalcogenide (TMD/TMDC) monolayers have gained considerable attention in recent years for their unique properties. Some of these properties include direct bandgap emission and strong mechanical and electronic properties. For these reasons, monolayer TMDs have been considered a promising material for next-generation quantum technologies and optoelectronic devices. However, for the field to make more gainful advancements and be implemented in devices, high-quality TMD monolayers need to be produced at a larger scale with high quality. In this article, some of the current means to produce larger-scale semiconducting monolayer TMDs will be reviewed. An emphasis will be given to the technique of molecular beam epitaxy (MBE) for two main reasons: (1) there is a growing body of research using this technique to grow TMD monolayers and (2) there is yet to be a body of work that has summarized the current research for MBE monolayer growth of TMDs.
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Affiliation(s)
- Collin Maurtua
- Department of Materials Science and Engineering, University of Delaware, Newark, DE 19716, United States of America
| | - Joshua Zide
- Department of Materials Science and Engineering, University of Delaware, Newark, DE 19716, United States of America
| | - Chitraleema Chakraborty
- Department of Materials Science and Engineering, University of Delaware, Newark, DE 19716, United States of America
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5
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Han X, Zhang Z, Wang R. A Mini Review: Phase Regulation for Molybdenum Dichalcogenide Nanomaterials. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:984. [PMID: 38869609 PMCID: PMC11174720 DOI: 10.3390/nano14110984] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2024] [Revised: 06/01/2024] [Accepted: 06/02/2024] [Indexed: 06/14/2024]
Abstract
Atomically thin two-dimensional transition metal dichalcogenides (TMDCs) have been regarded as ideal and promising nanomaterials that bring broad application prospects in extensive fields due to their ultrathin layered structure, unique electronic band structure, and multiple spatial phase configurations. TMDCs with different phase structures exhibit great diversities in physical and chemical properties. By regulating the phase structure, their properties would be modified to broaden the application fields. In this mini review, focusing on the most widely concerned molybdenum dichalcogenides (MoX2: X = S, Se, Te), we summarized their phase structures and corresponding electronic properties. Particularly, the mechanisms of phase transformation are explained, and the common methods of phase regulation or phase stabilization strategies are systematically reviewed and discussed. We hope the review could provide guidance for the phase regulation of molybdenum dichalcogenides nanomaterials, and further promote their real industrial applications.
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Affiliation(s)
| | - Zhihong Zhang
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China;
| | - Rongming Wang
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China;
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6
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Gao W, Zhi G, Zhou M, Niu T. Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2311317. [PMID: 38712469 DOI: 10.1002/smll.202311317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 03/14/2024] [Indexed: 05/08/2024]
Abstract
The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.
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Affiliation(s)
- Wenjin Gao
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | | | - Miao Zhou
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Tianchao Niu
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
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7
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Huang X, Xiong R, Hao C, Beck P, Sa B, Wiebe J, Wiesendanger R. 2D Lateral Heterojunction Arrays with Tailored Interface Band Bending. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308007. [PMID: 38315969 DOI: 10.1002/adma.202308007] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Revised: 12/24/2023] [Indexed: 02/07/2024]
Abstract
Two-dimensional (2D) lateral heterojunction arrays, characterized by well-defined electronic interfaces, hold significant promise for advancing next-generation electronic devices. Despite this potential, the efficient synthesis of high-density lateral heterojunctions with tunable interfacial band alignment remains a challenging. Here, a novel strategy is reported for the fabrication of lateral heterojunction arrays between monolayer Si2Te2 grown on Sb2Te3 (ML-Si2Te2@Sb2Te3) and one-quintuple-layer Sb2Te3 grown on monolayer Si2Te2 (1QL-Sb2Te3@ML-Si2Te2) on a p-doped Sb2Te3 substrate. The site-specific formation of numerous periodically arranged 2D ML-Si2Te2@Sb2Te3/1QL-Sb2Te3@ML-Si2Te2 lateral heterojunctions is realized solely through three epitaxial growth steps of thick-Sb2Te3, ML-Si2Te2, and 1QL-Sb2Te3 films, sequentially. More importantly, the precisely engineering of the interfacial band alignment is realized, by manipulating the substrate's p-doping effect with lateral spatial dependency, on each ML-Si2Te2@Sb2Te3/1QL-Sb2Te3@ML-Si2Te2 junction. Atomically sharp interfaces of the junctions with continuous lattices are observed by scanning tunneling microscopy. Scanning tunneling spectroscopy measurements directly reveal the tailored type-II band bending at the interface. This reported strategy opens avenues for advancing lateral epitaxy technology, facilitating practical applications of 2D in-plane heterojunctions.
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Affiliation(s)
- Xiaochun Huang
- Department of Physics, University of Hamburg, D-20355, Hamburg, Germany
| | - Rui Xiong
- Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Chunxue Hao
- Department of Physics, University of Hamburg, D-20355, Hamburg, Germany
| | - Philip Beck
- Department of Physics, University of Hamburg, D-20355, Hamburg, Germany
| | - Baisheng Sa
- Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Jens Wiebe
- Department of Physics, University of Hamburg, D-20355, Hamburg, Germany
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8
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Su SH, Huang TT, Pan BR, Lee JC, Qiu YJ, Chuang PY, Gultom P, Cheng CM, Chen YC, Huang JCA. Large Tunable Spin-to-Charge Conversion in Ni 80Fe 20/Molybdenum Disulfide by Cu Insertion. ACS APPLIED MATERIALS & INTERFACES 2024; 16. [PMID: 38670928 PMCID: PMC11082844 DOI: 10.1021/acsami.4c03360] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2024] [Revised: 04/12/2024] [Accepted: 04/18/2024] [Indexed: 04/28/2024]
Abstract
Spin-to-charge conversion at the interface between magnetic materials and transition metal dichalcogenides has drawn great interest in the research efforts to develop fast and ultralow power consumption devices for spintronic applications. Here, we report room temperature observations of spin-to-charge conversion arising from the interface of Ni80Fe20 (Py) and molybdenum disulfide (MoS2). This phenomenon can be characterized by the inverse Edelstein effect length (λIEE), which is enhanced with decreasing MoS2 thicknesses, demonstrating the dominant role of spin-orbital coupling (SOC) in MoS2. The spin-to-charge conversion can be significantly improved by inserting a Cu interlayer between Py and MoS2, suggesting that the Cu interlayer can prevent magnetic proximity effect from the Py layer and protect the SOC on the MoS2 surface from exchange interactions with Py. Furthermore, the Cu-MoS2 interface can enhance the spin current and improve electronic transport. Our results suggest that tailoring the interface of magnetic heterostructures provides an alternative strategy for the development of spintronic devices to achieve higher spin-to-charge conversion efficiencies.
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Affiliation(s)
- Shu Hsuan. Su
- Department
of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Tzu Tai Huang
- Department
of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Bi-Rong Pan
- Department
of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Jung-Chuan Lee
- Department
of Physics, National Cheng Kung University, Tainan 701, Taiwan
- Sheng
Chuang Technology Company, Taichung 407330, Taiwan
| | - Yi Jie Qiu
- Department
of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Pei-Yu Chuang
- National
Synchrotron Radiation Research Center, Hsinchu 300, Taiwan
| | - Pangihutan Gultom
- Department
of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Cheng-Maw Cheng
- National
Synchrotron Radiation Research Center, Hsinchu 300, Taiwan
- Department
of Photonics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Yi-Chun Chen
- Department
of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Jung-Chung Andrew Huang
- Department
of Physics, National Cheng Kung University, Tainan 701, Taiwan
- Department
of Applied Physics, National University
of Kaohsiung, Kaohsiung 811726, Taiwan
- Taiwan Consortium
of Emergent Crystalline Materials, Ministry
of Science and Technology, Taipei 106, Taiwan
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9
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Niazov-Elkan A, Shepelenko M, Alus L, Kazes M, Houben L, Rechav K, Leitus G, Kossoy A, Feldman Y, Kronik L, Vekilov PG, Oron D. Surface-Guided Crystallization of Xanthine Derivatives for Optical Metamaterial Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306996. [PMID: 38031346 DOI: 10.1002/adma.202306996] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/16/2023] [Revised: 11/07/2023] [Indexed: 12/01/2023]
Abstract
Numerous bio-organisms employ template-assisted crystallization of molecular solids to yield crystal morphologies with unique optical properties that are difficult to reproduce synthetically. Here, a facile procedure is presented to deposit bio-inspired birefringent crystals of xanthine derivatives on a template of single-crystal quartz. Crystalline sheets that are several millimeters in length, several hundred micrometers in width, and 300-600 nm thick, are obtained. The crystal sheets are characterized with a well-defined orientation both in and out of the substrate plane, giving rise to high optical anisotropy in the plane parallel to the quartz surface, with a refractive index difference Δn ≈ 0.25 and a refractive index along the slow axis of n ≈ 1.7. It is further shown that patterning of the crystalline stripes with a tailored periodic grating leads to a thin organic polarization-dependent diffractive meta-surface, opening the door to the fabrication of various optical devices from a platform of small-molecule based organic dielectric crystals.
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Affiliation(s)
- Angelica Niazov-Elkan
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot, 7610001, Israel
- William A. Brookshire Department of Chemical and Biomolecular Engineering, University of Houston, 4226 Martin Luther King Blvd, Houston, TX, 77204-4004, USA
- Department of Chemistry, University of Houston, 3585 Cullen Blvd., Houston, TX, 77204-5003, USA
| | - Margarita Shepelenko
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot, 7610001, Israel
| | - Lotem Alus
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot, 7610001, Israel
| | - Miri Kazes
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot, 7610001, Israel
| | - Lothar Houben
- Department of Chemical Research Support, Weizmann Institute of Science, Rehovot, 7610001, Israel
| | - Katya Rechav
- Department of Chemical Research Support, Weizmann Institute of Science, Rehovot, 7610001, Israel
| | - Gregory Leitus
- Department of Chemical Research Support, Weizmann Institute of Science, Rehovot, 7610001, Israel
| | - Anna Kossoy
- Department of Chemical Research Support, Weizmann Institute of Science, Rehovot, 7610001, Israel
| | - Yishay Feldman
- Department of Chemical Research Support, Weizmann Institute of Science, Rehovot, 7610001, Israel
| | - Leeor Kronik
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot, 7610001, Israel
| | - Peter G Vekilov
- William A. Brookshire Department of Chemical and Biomolecular Engineering, University of Houston, 4226 Martin Luther King Blvd, Houston, TX, 77204-4004, USA
- Department of Chemistry, University of Houston, 3585 Cullen Blvd., Houston, TX, 77204-5003, USA
| | - Dan Oron
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot, 7610001, Israel
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10
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Kandybka I, Groven B, Medina Silva H, Sergeant S, Nalin Mehta A, Koylan S, Shi Y, Banerjee S, Morin P, Delabie A. Chemical Vapor Deposition of a Single-Crystalline MoS 2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface. ACS NANO 2024; 18:3173-3186. [PMID: 38235963 DOI: 10.1021/acsnano.3c09364] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/19/2024]
Abstract
Recently, a step-flow growth mode has been proposed to break the inherent molybdenum disulfide (MoS2) crystal domain bimodality and yield a single-crystalline MoS2 monolayer on commonly employed sapphire substrates. This work reveals an alternative growth mechanism during the metal-organic chemical vapor deposition (MOCVD) of a single-crystalline MoS2 monolayer through anisotropic 2D crystal growth. During early growth stages, the epitaxial symmetry and commensurability of sapphire terraces rather than the sapphire step inclination ultimately govern the MoS2 crystal orientation. Strikingly, as the MoS2 crystals continue to grow laterally, the sapphire steps transform the MoS2 crystal geometry into diamond-shaped domains presumably by anisotropic diffusion of ad-species and facet development. Even though these MoS2 domains nucleate on sapphire with predominantly bimodal 0 and 60° azimuthal rotation, the individual domains reach lateral dimensions of up to 200 nm before merging seamlessly into a single-crystalline MoS2 monolayer upon coalescence. Plan-view transmission electron microscopy reveals the single-crystalline nature across 50 μm by 50 μm inspection areas. As a result, the median carrier mobility of MoS2 monolayers peaks at 25 cm2 V-1 s-1 with the highest value reaching 28 cm2 V-1 s-1. This work details synthesis-structure correlations and the possibilities to tune the structure and material properties through substrate topography toward various applications in nanoelectronics, catalysis, and nanotechnology. Moreover, shape modulation through anisotropic growth phenomena on stepped surfaces can provide opportunities for nanopatterning for a wide range of materials.
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Affiliation(s)
- Iryna Kandybka
- imec, Kapeldreef 75, Leuven 3001, Belgium
- Department of Chemistry KU Leuven, Celestijnenlaan 200F, Leuven 3001, Belgium
| | | | | | | | | | - Serkan Koylan
- imec, Kapeldreef 75, Leuven 3001, Belgium
- Quantum Solid State Physics KU Leuven, Celestijnenlaan 200D, Leuven 3001, Belgium
| | | | | | | | - Annelies Delabie
- imec, Kapeldreef 75, Leuven 3001, Belgium
- Department of Chemistry KU Leuven, Celestijnenlaan 200F, Leuven 3001, Belgium
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11
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Chen L, Cheng Z, He S, Zhang X, Deng K, Zong D, Wu Z, Xia M. Large-area single-crystal TMD growth modulated by sapphire substrates. NANOSCALE 2024; 16:978-1004. [PMID: 38112240 DOI: 10.1039/d3nr05400d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Transition metal dichalcogenides (TMDs) have recently attracted extensive attention due to their unique physical and chemical properties; however, the preparation of large-area TMD single crystals is still a great challenge. Chemical vapor deposition (CVD) is an effective method to synthesize large-area and high-quality TMD films, in which sapphires as suitable substrates play a crucial role in anchoring the source material, promoting nucleation and modulating epitaxial growth. In this review, we provide an insightful overview of different epitaxial mechanisms and growth behaviors associated with the atomic structure of sapphire surfaces and the growth parameters. First, we summarize three epitaxial growth mechanisms of TMDs on sapphire substrates, namely, van der Waals epitaxy, step-guided epitaxy, and dual-coupling-guided epitaxy. Second, we introduce the effects of polishing, cutting, and annealing processing of the sapphire surface on the TMD growth. Finally, we discuss the influence of other growth parameters, such as temperature, pressure, carrier gas, and substrate position, on the growth kinetics of TMDs. This review might provide deep insights into the controllable growth of large-area single-crystal TMDs on sapphires, which will propel their practical applications in high-performance nanoelectronics and optoelectronics.
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Affiliation(s)
- Lina Chen
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Zhaofang Cheng
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China
| | - Shaodan He
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Xudong Zhang
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Kelun Deng
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Dehua Zong
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Zipeng Wu
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Minggang Xia
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China
- Shaanxi Province Key Laboratory of Quantum Information and Optoelectronic Quantum Devices, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China
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12
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Elahi E, Ahmad M, Dahshan A, Rabeel M, Saleem S, Nguyen VH, Hegazy HH, Aftab S. Contemporary innovations in two-dimensional transition metal dichalcogenide-based P-N junctions for optoelectronics. NANOSCALE 2023; 16:14-43. [PMID: 38018395 DOI: 10.1039/d3nr04547a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
Two-dimensional transition metal dichalcogenides (2D-TMDCs) with various physical characteristics have attracted significant interest from the scientific and industrial worlds in the years following Moore's law. The p-n junction is one of the earliest electrical components to be utilized in electronics and optoelectronics, and modern research on 2D materials has renewed interest in it. In this regard, device preparation and application have evolved substantially in this decade. 2D TMDCs provide unprecedented flexibility in the construction of innovative p-n junction device designs, which is not achievable with traditional bulk semiconductors. It has been investigated using 2D TMDCs for various junctions, including homojunctions, heterojunctions, P-I-N junctions, and broken gap junctions. To achieve high-performance p-n junctions, several issues still need to be resolved, such as developing 2D TMDCs of superior quality, raising the rectification ratio and quantum efficiency, and successfully separating the photogenerated electron-hole pairs, among other things. This review comprehensively details the various 2D-based p-n junction geometries investigated with an emphasis on 2D junctions. We investigated the 2D p-n junctions utilized in current rectifiers and photodetectors. To make a comparison of various devices easier, important optoelectronic and electronic features are presented. We thoroughly assessed the review's prospects and challenges for this emerging field of study. This study will serve as a roadmap for more real-world photodetection technology applications.
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Affiliation(s)
- Ehsan Elahi
- Department of Physics & Astronomy and Graphene Research Institute, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea.
| | - Muneeb Ahmad
- Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea
| | - A Dahshan
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
| | - Muhammad Rabeel
- Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea
| | - Sidra Saleem
- Division of Science Education, Department of Energy Storage/Conversion Engineering for Graduate School, Jeonbuk National University, Jeonju, Jeonbuk 54896, Republic of Korea
| | - Van Huy Nguyen
- Department of Nanotechnology and Advanced Materials Engineering, and H.M.C., Sejong University, Seoul 05006, South Korea
| | - H H Hegazy
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
- Research Centre for Advanced Materials Science (RCAMS), King Khalid University, P. O. Box 9004, Abha 61413, Saudi Arabia
| | - Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul, 05006 South Korea.
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13
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Chen Q, Yang K, Liang M, Kang J, Yi X, Wang J, Li J, Liu Z. Lattice modulation strategies for 2D material assisted epitaxial growth. NANO CONVERGENCE 2023; 10:39. [PMID: 37626161 PMCID: PMC10457265 DOI: 10.1186/s40580-023-00388-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2023] [Accepted: 08/13/2023] [Indexed: 08/27/2023]
Abstract
As an emerging single crystals growth technique, the 2D-material-assisted epitaxy shows excellent advantages in flexible and transferable structure fabrication, dissimilar materials integration, and matter assembly, which offers opportunities for novel optoelectronics and electronics development and opens a pathway for the next-generation integrated system fabrication. Studying and understanding the lattice modulation mechanism in 2D-material-assisted epitaxy could greatly benefit its practical application and further development. In this review, we overview the tremendous experimental and theoretical findings in varied 2D-material-assisted epitaxy. The lattice guidance mechanism and corresponding epitaxial relationship construction strategy in remote epitaxy, van der Waals epitaxy, and quasi van der Waals epitaxy are discussed, respectively. Besides, the possible application scenarios and future development directions of 2D-material-assisted epitaxy are also given. We believe the discussions and perspectives exhibited here could help to provide insight into the essence of the 2D-material-assisted epitaxy and motivate novel structure design and offer solutions to heterogeneous integration via the 2D-material-assisted epitaxy method.
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Affiliation(s)
- Qi Chen
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Kailai Yang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Meng Liang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junjie Kang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
| | - Xiaoyan Yi
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junxi Wang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jinmin Li
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhiqiang Liu
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
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14
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Liu F, Wang T, Gao X, Yang H, Zhang Z, Guo Y, Yuan Y, Huang Z, Tang J, Sheng B, Chen Z, Liu K, Shen B, Li XZ, Peng H, Wang X. Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene. SCIENCE ADVANCES 2023; 9:eadf8484. [PMID: 37531436 PMCID: PMC10396303 DOI: 10.1126/sciadv.adf8484] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2022] [Accepted: 07/05/2023] [Indexed: 08/04/2023]
Abstract
Transferred graphene provides a promising III-nitride semiconductor epitaxial platform for fabricating multifunctional devices beyond the limitation of conventional substrates. Despite its tremendous fundamental and technological importance, it remains an open question on which kind of epitaxy is preferred for single-crystal III-nitrides. Popular answers to this include the remote epitaxy where the III-nitride/graphene interface is coupled by nonchemical bonds, and the quasi-van der Waals epitaxy (quasi-vdWe) where the interface is mainly coupled by covalent bonds. Here, we show the preferred one on wet-transferred graphene is quasi-vdWe. Using aluminum nitride (AlN), a strong polar III-nitride, as an example, we demonstrate that the remote interaction from the graphene/AlN template can inhibit out-of-plane lattice inversion other than in-plane lattice twist of the nuclei, resulting in a polycrystalline AlN film. In contrast, quasi-vdWe always leads to single-crystal film. By answering this long-standing controversy, this work could facilitate the development of III-nitride semiconductor devices on two-dimensional materials such as graphene.
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Affiliation(s)
- Fang Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Tao Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Xin Gao
- Center for Nano-chemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Huaiyuan Yang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Zhihong Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, Institute for Multidisciplinary Innovation, University of Science and Technology Beijing, Beijing 100083, China
- Interdisciplinary Institute of Light-Element Quantum Materials, Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China
| | - Yucheng Guo
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Ye Yuan
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Zhen Huang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Jilin Tang
- Center for Nano-chemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Bowen Sheng
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Zhaoying Chen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials, Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China
| | - Bo Shen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
| | - Xin-Zheng Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials, Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
| | - Hailin Peng
- Center for Nano-chemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Beijing Graphene Institute, Beijing 100095, China
| | - Xinqiang Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
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15
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Li X, Yang J, Sun H, Huang L, Li H, Shi J. Controlled Synthesis and Accurate Doping of Wafer-Scale 2D Semiconducting Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305115. [PMID: 37406665 DOI: 10.1002/adma.202305115] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2023] [Revised: 06/24/2023] [Accepted: 07/04/2023] [Indexed: 07/07/2023]
Abstract
2D semiconducting transition metal dichalcogenide (TMDCs) possess atomically thin thickness, a dangling-bond-free surface, flexible band structure, and silicon-compatible feature, making them one of the most promising channels for constructing state-of-the-art field-effect transistors in the post-Moore's era. However, the existing 2D semiconducting TMDCs fall short of meeting the industry criteria for practical applications in electronics due to their small domain size and the lack of an effective approach to modulate intrinsic physical properties. Therefore, it is crucial to prepare and dope 2D semiconducting TMDCs single crystals with wafer size. In this review, the up-to-date progress regarding the wafer-scale growth of 2D semiconducting TMDC polycrystalline and single-crystal films is systematically summarized. The domain orientation control of 2D TMDCs and the seamless stitching of unidirectionally aligned 2D islands by means of substrate design are proposed. In addition, the accurate and uniform doping of 2D semiconducting TMDCs and the effect on electronic device performances are also discussed. Finally, the dominating challenges pertaining to the enhancement of the electronic device performances of TMDCs are emphasized, and further development directions are put forward. This review provides a systematic and in-depth summary of high-performance device applications of 2D semiconducting TMDCs.
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Affiliation(s)
- Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Hang Sun
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Ling Huang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
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16
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Burns K, Tan AMZ, Hachtel JA, Aditya A, Baradwaj N, Mishra A, Linker T, Nakano A, Kalia R, Lang EJ, Schoell R, Hennig RG, Hattar K, Aitkaliyeva A. Tailoring the Angular Mismatch in MoS 2 Homobilayers through Deformation Fields. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2300098. [PMID: 37026674 DOI: 10.1002/smll.202300098] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Revised: 03/06/2023] [Indexed: 06/19/2023]
Abstract
Ultrathin MoS2 has shown remarkable characteristics at the atomic scale with an immutable disorder to weak external stimuli. Ion beam modification unlocks the potential to selectively tune the size, concentration, and morphology of defects produced at the site of impact in 2D materials. Combining experiments, first-principles calculations, atomistic simulations, and transfer learning, it is shown that irradiation-induced defects can induce a rotation-dependent moiré pattern in vertically stacked homobilayers of MoS2 by deforming the atomically thin material and exciting surface acoustic waves (SAWs). Additionally, the direct correlation between stress and lattice disorder by probing the intrinsic defects and atomic environments are demonstrated. The method introduced in this paper sheds light on how engineering defects in the lattice can be used to tailor the angular mismatch in van der Waals (vdW) solids.
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Affiliation(s)
- Kory Burns
- Department of Materials Science & Engineering, University of Florida, Gainesville, FL, 32611, USA
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, 87545, USA
- Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Anne Marie Z Tan
- Department of Materials Science & Engineering, University of Florida, Gainesville, FL, 32611, USA
| | - Jordan A Hachtel
- Center for Nanophase Materials Science, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA
| | - Anikeya Aditya
- Department of Physics, University of Southern California, Los Angeles, CA, 90089, USA
| | - Nitish Baradwaj
- Department of Physics, University of Southern California, Los Angeles, CA, 90089, USA
| | - Ankit Mishra
- Department of Physics, University of Southern California, Los Angeles, CA, 90089, USA
| | - Thomas Linker
- Department of Physics, University of Southern California, Los Angeles, CA, 90089, USA
| | - Aiichiro Nakano
- Department of Physics, University of Southern California, Los Angeles, CA, 90089, USA
| | - Rajiv Kalia
- Department of Physics, University of Southern California, Los Angeles, CA, 90089, USA
| | - Eric J Lang
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, 87545, USA
- Department of Nuclear Engineering, University of New Mexico, Albuquerque, NM, 87131, USA
| | - Ryan Schoell
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, 87545, USA
| | - Richard G Hennig
- Department of Materials Science & Engineering, University of Florida, Gainesville, FL, 32611, USA
| | - Khalid Hattar
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, 87545, USA
- Department of Nuclear Engineering, University of Tennessee, Knoxville, TN, 37996, USA
| | - Assel Aitkaliyeva
- Department of Materials Science & Engineering, University of Florida, Gainesville, FL, 32611, USA
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17
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Kim G, Kim D, Choi Y, Ghorai A, Park G, Jeong U. New Approaches to Produce Large-Area Single Crystal Thin Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2203373. [PMID: 35737971 DOI: 10.1002/adma.202203373] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2022] [Revised: 06/15/2022] [Indexed: 06/15/2023]
Abstract
Wafer-scale growth of single crystal thin films of metals, semiconductors, and insulators is crucial for manufacturing high-performance electronic and optical devices, but still challenging from both scientific and industrial perspectives. Recently, unconventional advanced synthetic approaches have been attempted and have made remarkable progress in diversifying the species of producible single crystal thin films. This review introduces several new synthetic approaches to produce large-area single crystal thin films of various materials according to the concepts and principles.
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Affiliation(s)
- Geonwoo Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Dongbeom Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Yoonsun Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Arup Ghorai
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
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