Realizing zT of 2.3 in Ge1-x-y Sbx Iny Te via Reducing the Phase-Transition Temperature and Introducing Resonant Energy Doping

Recent developments in polymer semiconductors with excellent electron transport performances

Benefiting from molecular design and device innovation, electronic devices based on polymer semiconductors have achieved significant developments and gradual commercialization over the past few decades. Most of high-performance polymer semiconductors that have been prepared exhibit p-type performances, and records of their carrier mobilities are constantly being broken through. Although ambipolar and n-type polymers are necessary for constructing p-n heterojunctions and logic circuits, only a few materials show outstanding device performances, which leads to their developments lagging far behind that of p-type analogues. As a consequence, it is extremely significant to summarize polymer semiconductors with excellent electron transport performances. This review focuses on the design considerations and bonding modes between monomers of polymer semiconductors with high electron mobilities. To enhance electron transport performances of polymer semiconductors, the structural modification strategies are described in detail. Subsequently, the electron transport, thermoelectric, mixed ionic-electronic conduction, intrinsically stretchable, photodetection, and spin transport performances of high-electron mobility polymers are discussed from the perspective of molecular engineering. In the end, the challenges and prospects in this research field are presented, which provide valuable guidance for the design of polymer semiconductors with excellent electron transport performances and the exploration of more advanced applications in the future.

Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in Bi2Te2.7Se0.3 Alloys via Introducing Organic & Inorganic Nanoparticles

N-type Bi2Te2.7Se0.3(BTS) is a state-of-the-art thermoelectric material owing to its excellent thermoelectric properties near room temperatures for commercial applications. However, its performance is restricted by its comparatively low figure of merit ZT. Here, it is shown that a 14% increase in power factor (PF) (at 300 K) can be reached through incorporation of inorganic GaAs nanoparticles due to enhanced thermopower originating from the energy-dependent carrier scattering. Besides, further incorporation of organic nanophase PEDOT: PSS can reduce its lattice thermal conductivity by 59% due to the strong scattering of middle- and low-frequency phonons. As a result, a peak ZT value of ZTmax ≈ 1.31 (at 373 K) and an average ZTave ≈ 1.10 (300-473 K) are achieved for the BTS/(0.4 wt.% GaAs + 0.5 wt.% PEDOT: PSS) sample. The present work demonstrates that incorporation of organic-inorganic nanophase is an effective way to improve the performance of BTS.

Thermoelectric and electrical properties of triple-conducting multicomponent oxides based on substituted barium cerate-zirconate

Multicomponent oxides often have exceptional thermal stability and interesting electronic properties. The present work presents the thermoelectric and electrical properties of the Ba(Zr0.2Hf0.2Sn0.2Ti0.2Fe0.2)O3-δ and Ba(Zr0.1Hf0.1Sn0.1Ti0.1Co0.1Ce0.1Bi0.1Fe0.1Y0.1Zn0.1)O3-δ multicomponent perovskites. Single-phase cubic perovskites were synthesized using the solid-state reaction method. They were characterized using X-ray diffraction, drop-solution calorimetry, and thermogravimetry methods. The total electrical conductivity and Seebeck coefficient measurements were performed in dry and wet air at temperatures between 600 and 1050 K. It was found that Ba(Zr0.1Hf0.1Sn0.1Ti0.1Co0.1Ce0.1Bi0.1Fe0.1Y0.1Zn0.1)O3-δ is thermodynamically less stable than Ba(Zr0.2Hf0.2Sn0.2Ti0.2Fe0.2)O3-δ. Moreover, this oxide incorporates a higher amount of water and exhibits higher conductivity and lower Seebeck coefficient. Charge transport in both perovskites can be assigned to the small-polaron hopping process via electron holes. An interesting temperature dependence of the Seebeck coefficient was found and, at temperatures above 750 K, related to hopping between energetically inequivalent states.

Giant Power Output from Ionic/electronic Hybrid Nanocomposite Thermoelectric Converter Under Constant Temperature Gradient

Thermoelectric (TE) materials that directly convert heat to electricity are of great significance for sustainable development. However, TE generators (TEGs) made from electronic TE materials suffer from low Seebeck coefficient (10-2-100 mV K-1). While ionic TE capacitors based on ionic conductors exhibit high thermovoltage (100-102 mV K-1), ionic TE capacitors provide power discontinuously only under variation of temperature gradient as ions cannot transport across electrodes to external circuits. Herein, an ionic/electronic hybrid nanocomposite TE converter (NCTEC) by integrating carbon nanotube/polylactic acid nanofibrous fabrics (CPNF) with gelatin ionogel is reported. The resulting NCTEC exhibits a record-high output power density normalized by squared temperature gradient (Pave/ΔT2) of 1.72 mW m-2 K-2 and realizes continuous power output (over 12 h) at a constant temperature gradient, which is among the highest reported power output for TE converters and can be attributed to the combination of substantial increase in interfacial capacitive effect between ionogel and CPNF and an optimized electrical property of the CPNF. The work provides an effective strategy to overcome the limitations of both TEGs and ionic TE capacitors.

Thermoelectric Materials and Devices for Advanced Biomedical Applications

Thermoelectrics (TEs), enabling the direct conversion between heat and electrical energy, have demonstrated extensive application potential in biomedical fields. Herein, the mechanism of the TE effect, recent developments in TE materials, and the biocompatibility assessment of TE materials are provided. In addition to the fundamentals of TEs, a timely and comprehensive review of the recent progress of advanced TE materials and their applications is presented, including wearable power generation, personal thermal management, and biosensing. In addition, the new-emerged medical applications of TE materials in wound healing, disease treatment, antimicrobial therapy, and anti-cancer therapy are thoroughly reviewed. Finally, the main challenges and future possibilities are outlined for TEs in biomedical fields, as well as their material selection criteria for specific application scenarios. Together, these advancements can provide innovative insights into the development of TEs for broader applications in biomedical fields.

Synergetic Optimization via Indium and Rare Metal Yttrium Co-doping in GeTe Results in High Power Factor and Excellent Thermal Performance

Excess intrinsic Ge vacancies in GeTe materials lead to excessively high hole concentration and high thermal conductivity, producing poor thermoelectric performance. Here, synergistic control and optimization of the thermoelectric transport properties and microstructure of GeTe-based materials were achieved through co-doping with In and rare earth element Y, resulting in a significant enhancement of thermoelectric performance. The Ge0.94In0.03Y0.03Te sample reached a ZTmax of 1.84 at 773 K, representing an increase of around 91% compared to the GeTe matrix. The experimental results indicate that the doping of In optimizes the band structure by introducing resonant levels and increasing the degeneracy of the valence band. Y doping introduces in situ nanoscale secondary phases and lattice distortions due to defect generation, enhancing phonon scattering and significantly reducing the κlat. This work elaborates on how co-doping with In and Y achieves the optimization of the thermoelectric performance of GeTe-based materials. While the electrical transmission characteristics are improved, the thermal conductivity is significantly reduced. For the Ge0.94In0.03Y0.03Te sample, κlat decreased to ∼0.56 W m-1 K-1 at 573 K, resulting in a ZTave of ∼0.99 over the entire temperature range, representing over 140% improvement compared to undoped GeTe. This improvement is significantly higher compared with other works on GeTe and PbTe.

Nanoscale-surface roughness enhances the performance of organic thin-film thermoelectrics

Organic thermoelectric materials would be ideally suited for wearable thermoelectric devices but currently are not efficient enough for practical applications. Previous research efforts have tailored the composition, oxidation status, or doping levels of organic thin-film thermoelectrics to maximize their thermoelectric performance typically measured by the thermoelectric figure of merit (ZT). This study demonstrates that the thermoelectric ZT of the organic thin-films can be significantly boosted by increasing the surface roughness of the films. A simple soft-templating method that can produce nanorough thin films of organic thermoelectrics was developed and used to fabricate nanorough poly(3,4-ethylenedioxythiophene):Tosylate (PEDOT:Tos) thin films. The performance of the nanorough PEDOT:Tos films was compared to that of the smooth PEDOT:Tos films. The ZT value of the nanorough films was estimated to be 0.99, which is 83% higher than that of the smooth films and one of the highest ever reported for organic thermoelectrics. The flexibility and durability of the nanorough PEDOT:Tos films were also proved. A proof-of-concept thermoelectric device that used 5 strips of nanorough films, as the p-type thermoelectric elements, and five strips of bismuth thin films, as the n-type elements, produced 118.7 nW when ΔT = 50 K.

Lattice thermal conductivity reduction in Ca3AlSb3 and Ca5Al2Sb6 by manipulating the covalent tetrahedral chain

Understanding the structural and physical origins of low thermal conductivity is critical to improving and designing efficient thermoelectric materials. For two distinct Zintl Ca-Al-Sb compounds with different stoichiometric ratios (Ca3AlSb3 and Ca5Al2Sb6), experimental measurements suggest the low lattice thermal conductivities (∼1.43 W mK-1 for Ca3AlSb3 and 1.52 W mK-1 for Ca5Al2Sb6 at 300 K). In order to understand the physical origin of the low thermal conductivity, we present the first-principles studies on the lattice dynamics and phonon-transport properties. The theoretically calculated lattice thermal conductivity of Ca3AlSb3 and Ca5Al2Sb6 is ∼1.61 W mK-1 for Ca3AlSb3 and 1.85 W mK-1 for Ca5Al2Sb6 at 300 K, which is in reasonable agreement with the experimental measurements. The low lattice thermal conductivity is attributed to the low acoustic Debye temperature and strong optical-acoustic phonon couplings in the two Ca-Al-Sb compounds. It is worth noting that the thermal conductivity of Ca3AlSb3 and Ca5Al2Sb6 along the x direction (along the Al-Sb chain) is obviously higher than that along the y/z direction (perpendicular to the chain). The high lattice thermal conductivity along the Al-Sb chain is due to the strong Al-Sb covalent bond. From the phonon density of states (PDOS), the obviously frequency regions dominated by different atoms suggest that forming defects with one atom would only shift its related PDOS and might not affect the PDOS of others. Based on the understandings of the crystal structure, PDOS and atomic displacement parameter, we represent a methodology to further lower their lattice thermal conductivity: substituting heavier atoms along the Al-Sb chain to strongly scatter phonons. When using Tl to substitute Al, the vibration frequency of the Tl dopant is only 1/3 of that of the substituted Al atom. The significantly decreased vibration frequency will introduce a low phonon band within the PDOS, which will suppress the lattice thermal conductivity. Our work not only elucidates the physical mechanism of low lattice thermal conductivity in Ca3AlSb3 and Ca5Al2Sb6 Zintl compounds, but also offers an efficient approach (breaking the covalent tetrahedral chains) to further block the heat transport.

Systematic investigation of structural, magneto-electronic, mechanical, thermophysical, optical and thermoelectric properties of Hf2VZ (Z = Ga, In, Tl) inverse Heusler alloy for spintronics applications

The structural stability, magneto-electronic, mechanical, thermodynamic, thermoelectric and optical, characteristics of the Hf2VZ (Z = Ga, In, Tl) Heusler alloy are revealed and understood by a comprehensive investigation employing density functional theory simulations. The stability of these alloys in F-43m phase is confirmed by structural optimizations and cohesive energies, which also provide the equilibrium lattice parameters. Compared to generalized gradient approximations, modified Becke-Johnson methods were more effective in determining the electrical structure and ground state attributes. Hf2VZ (Z = Ga, In, Tl) is predicted to have half-metallic ferromagnetic characteristics with indirect spin-up gaps based on the band structure analysis and density of state calculations. Stability of these compounds is determined by calculating the elastic constants indicating the ductile nature of these alloys. The quasi-harmonic Debye model is used to predict the effects of temperature and pressure on thermodynamic characteristics, conveying the alloys' thermodynamic stability. To estimate the thermoelectric performance of these materials, we compute electrical conductivities and Seebeck coefficients. The optical parameters like absorption coefficient, optical conductivity, dielectric constants etc., were determined to show the photo-voltaic applications of these alloys. Hence, the finding will lead to future research on developing new types of Hafnium based Heusler alloys for spintronics, thermoelectric and optoelectronics applications.

Hybridizing anomalous Nernst effect in artificially tilted multilayer based on magnetic topological material

Transverse thermoelectric conversion holds significant potential in addressing complex challenges faced by classical Seebeck/Peltier modules. A promising transverse thermoelectric phenomenon is the anomalous Nernst effect originating from nontrivial band structures in magnetic topological materials. However, the currently reported performance of the anomalous Nernst effect in topological materials, e.g., Co2MnGa, remains insufficient for practical thermoelectric applications. Here, we unveil an unconventional availability of the anomalous Nernst effect by integrating magnetic topological materials into artificially tilted multilayers, known to exhibit the structure-induced transverse thermoelectric conversion due to the off-diagonal Seebeck effect. Our experiments reveal that the transverse thermoelectric performance in Co2MnGa-based artificially tilted multilayers is improved through the hybrid action of the anomalous Nernst and off-diagonal Seebeck effects, with the magnetization-dependent performance modulation being one order of magnitude greater than the performance achievable with the anomalous Nernst effect alone. This synergy underscores the importance of hybrid transverse thermoelectric conversion and paves a way for advancing thermoelectric applications using magnetic materials.

Janus-like Structure and Resonance Level Actualized Ultralow Lattice Thermal Conductivity and Enhanced ZTave in Mg3(Sb, Bi)2-Based Zintls

Grain boundary (GB) engineering includes grain size and GB segregation. Grain size has been proven to affect the electrical properties of Mg3(Sb, Bi)2 at low temperatures. However, the formation mechanism of GB segregation and what kind of GB segregation is beneficial to the performance are still unclear. Here, the Ga/Bi cosegregation at GBs and Mg segregation within grains optimize the transport of electrons and phonons simultaneously. Ga/Bi cosegregation promotes the formation of Janus-like structures due to the diverse ordering tendencies of liquid Mg3Sb2 and Mg3Bi2 and the absence of a solid solution of Ga/Bi. The Janus-like structure significantly reduces the room-temperature lattice thermal conductivity by introducing diverse microdefects. Meanwhile, a coherent interface between the nano Mg segregation region and the matrix is formed, which reduces the thermal conductivity without affecting the carrier transport. Furthermore, the band structure calculations show that Ga doping introduces the resonance level, increasing the Seebeck coefficient. Finally, the lattice thermal conductivity reaches ∼0.4 W m-1 K-1, and a high average ZT of 1.21 between 323 and ∼773 K is achieved for Mg3.2Y0.02Ga0.03Sb1.5Bi0.5. This work provides guidance for improving the thermoelectric performance via designing cosegregation.

Computational insights into transition metal-based BaCoX3 (X = Cl, Br, I) halide perovskites for spintronics, photovoltaics, and renewable energy devices

Ab-initio simulations using density functional theory (DFT) were employed to investigate the structural, mechanical, electronic, magnetic, optical, and thermoelectric properties of halide perovskites [Formula: see text] (X = Cl, Br, I). Structural optimization and mechanical stability assessments confirm the reliability of these perovskites in a hexagonal P[Formula: see text]mc symmetry. The stability of the ferromagnetic phase was validated through total crystal energy minimization via Murnaghan's equation of state. Electronic band structures and density of states, derived from the generalized gradient approximation (GGA), reveal a semiconducting ferromagnetic nature in the spin up channel, spotlighting their potential in semiconductor spintronic applications. Phonon dispersion analysis of [Formula: see text] and [Formula: see text] revealed positive phonon modes throughout the entire Brillouin zone, confirming their dynamical stability. In contrast, [Formula: see text] demonstrated dynamical instability. The elastic constants confirm the mechanical stability and ductile nature of the perovskites. Optical and dielectric properties of these perovskites show significant UV absorption and photoconductivity, making them highly suitable for optoelectronic and solar cell applications. Finally, transport properties, such as the Seebeck coefficient, electrical conductivity, thermal conductivity, power factor, and figure of merit (ZT) unveil their exceptional thermoelectric performance. Combining half-metallic ferromagnetic traits with superior thermoelectric and optoelectronic performance positions [Formula: see text] compounds as exceptional candidates for applications in spintronics, optoelectronics, and thermoelectrics. This comprehensive investigation demonstrates their ability to excel across a diverse array of advanced technological applications.

Two-dimensional BiSbTeX2 (X = S, Se, Te) and their Janus monolayers as efficient thermoelectric materials

Today, there is a huge need for highly efficient and sustainable energy resources to tackle environmental degradation and energy crisis. We have analyzed the electronic, mechanical and thermoelectric (TE) characteristics of two-dimensional (2D) BiSbTeX2 (X = S, Se and Te) and Janus BiSbTeXY (X/Y = S, Se and Te) monolayers by implementing first principles simulations. These monolayers' dynamic stability and thermal stability have been demonstrated through phonon dispersion spectra and ab initio molecular dynamics (AIMD) simulations, respectively. The band structure of these monolayers can be tuned by applying uniaxial and biaxial strains. The investigated lattice thermal conductivity (κl) for these monolayers lies between 0.23 and 0.37 W m-1 K-1 at 300 K. For a more precise calculation of the scattering rate, we implemented electron-phonon coupling (EPC) and spin-orbit coupling effects to calculate the transport properties. For p(n)-type carriers, the power factor of these monolayers is predicted to be as high as 2.08 × 10-3 W m-1 K-2 and (0.47 × 10-3 W m-1 K-2) at 300 K. The higher thermoelectric figure of merit (ZT) of p-type carriers at 300 K is obtained because of their very low value of κl and high power factor. Our theoretical investigation predicts that these monolayers can be potential candidates for fabricating highly efficient thermoelectric power generators.

Boosting Thermoelectric Performance via Weakening Carrier-Phonon Coupling in BiCuSeO-Graphene Composites

BiCuSeO is a promising oxygen-containing thermoelectric material due to its intrinsically low lattice thermal conductivity and excellent service stability. However, the low electrical conductivity limits its thermoelectric performance. Aliovalent element doping can significantly improve their carrier concentration, but it may also impact carrier mobility and thermal transport properties. Considering the influence of graphene on carrier-phonon decoupling, Bi0.88Pb0.06Ca0.06CuSeO (BPCCSO)-graphene composites are designed. For further practical application, a rapid preparation method is employed, taking less than 1 h, which combines self-propagating high-temperature synthesis with spark plasma sintering. The incorporation of graphene simultaneously optimizes the electrical properties and thermal conductivity, yielding a high ratio of weighted mobility to lattice thermal conductivity (144 at 300 K and 95 at 923 K). Ultimately, BPCCSO-graphene composites achieve exceptional thermoelectric performance with a ZT value of 1.6 at 923 K, bringing a ≈40% improvement over BPCCSO without graphene. This work further promotes the practical application of BiCuSeO-based materials and this facile and effective strategy can also be extended to other thermoelectric systems.

A DFT Computational Study of Type-I Clathrates A8Sn46-x (A = Cs or NH4, x = 0 or 2)

Semiconducting clathrates have attracted considerable interest in the field of thermoelectric materials. We report here a computational study on the crystal structure, the enthalpy of formation, and the physical properties of the following type-I clathrates: (a) experimentally studied Cs8Sn44 and hypothetical Cs8Sn46 and (b) hypothetical (NH4)8Sn46-x (x = 0 or 2). The ab initio VASP calculations for the nominal stoichiometries include the geometry optimization of the initial structural models, enthalpies of formation, and the electronic and phonon density of states. Comparison of the chemical bonding of the structural models is performed via the electron localization function. The results show that the presence and distribution of defects in the Sn framework for both Cs8Sn46-x and (NH4)8Sn46-x systems significantly alters the formation energy and its electrical properties, ranging from metallic to semiconducting behavior. In particular, one defect per six-membered Sn ring in a 3D spiro-network is the thermodynamically preferred configuration that results in the Cs8Sn44 and (NH4)8Sn44 stoichiometries with narrow-band gap semiconducting behavior. Moreover, the rotation of the ammonium cation in the polyhedral cavities is an interesting feature that may promote the use of ammonium or other small molecular cations as guests in clathrates for thermoelectric applications; this is due to the decrease in the lattice thermal conductivity.

Surface Degradation of Mg2X-Based Composites at Room Temperature: Assessing Grain Boundary and Bulk Diffusion Using Atomic Force Microscopy and Scanning Electron Microscopy

Practical application of thermoelectric generators necessitates materials that combine high heat-to-electricity conversion efficiency with long-term functional stability under operation conditions. While Mg2(Si,Sn)-based materials exhibit promising thermoelectric properties and module prototypes have been demonstrated, their stability remains a challenge, demanding thorough investigation. Utilizing atomic force microscopy (AFM) and scanning electron microscopy (SEM), we investigate the surface degradation of a composite material comprising Si-rich and Sn-rich Mg2(Si,Sn) solid solutions. The investigation reveals a pronounced dependence of stability on Sn content, with the Sn-rich phase Mg2Si0.13Sn0.87 displaying the formation of a nonprotective oxide layer. Subsequent AFM measurements provide evidence of dominating grain boundary diffusion of loosely bound Mg, compared to bulk diffusion, observed within a few days, ultimately resulting in a complete surface oxidation of the Sn-rich phase within several weeks. On the other hand, Mg2Si and Si-rich Mg2Si0.80±0.05Sn0.20±0.05 remain stable against Mg diffusion to the surface even after prolonged exposure. Comparison with previous investigations confirms that the degradation rate is found to be highly dependent on the Sn content, with markedly higher rates observed for x = 0.87 compared to x = 0.70 in Mg2Si1-xSnx. These findings contribute to a better understanding of the stability challenges associated with Mg2(Si,Sn)-based materials, essential for the development of robust thermoelectric materials for practical applications.

Synergistic Tailoring of Electronic and Thermal Transports in Thermoelectric Se-Free n-Type (Bi,Sb)2Te3

Se-free n-type (Bi,Sb)2Te3 thermoelectric materials, outperforming traditional n-type Bi2(Te,Se)3, emerge as a compelling candidate for practical applications of recovering low-grade waste heat. A 100% improvement in the maximum ZT of n-type Bi1.7Sb0.3Te3 is demonstrated by using melt-spinning and excess Te-assisted transient liquid phase sintering (LPS). Te-rich sintering promotes the formation of intrinsic defects (TeBi), elevating the carrier concentration and enhancing the electrical conductivity. Melt-spinning with excess Te fine-tunes the electronic band, resulting in a high power-factor of 0.35 × 10-3 W·m-1 K-2 at 300 K. Rapid volume change during sintering induces the formation of dislocation networks, significantly suppressing the lattice thermal conductivity (0.4 W·m-1 K-1). The developed n-type legs achieve a high maximum ZT of 1.0 at 450 K resulting in a 70% improvement in the output power of the thermoelectric device (7.7 W at a temperature difference of 250 K). This work highlights the synergy between melt-spinning and transient LPS, advancing the tailored control of both electronic and thermal properties in thermoelectric technology.

Rational Design of Cu Vacancies and Antisite Defects for Boosting the Thermoelectric Properties of CuGaTe2-Based Compounds

CuGaTe2-based compounds show great promise in the application for high-temperature thermoelectric power generation; however, its wide bandgap feature poses a great challenge for enhancing thermoelectric performance via structural defects modulation and doping the system. Herein, it is discovered that the presence of GaCu antisite defects in the CuGaTe2 compound promotes the formation of Cu vacancies, and vice versa, which tends to form the charge-neutral structure defects combination with one GaCu antisite defect and two Cu vacancies. The accumulation of Cu vacancies in the structure of the (Cu2Te)x(Ga2Te3)1-x compounds evolves into twins and stacking faults. This in conjunction with GaCu antisite defects intensify the point defects phonon scattering, yielding a dramatic reduction on lattice thermal conductivity from 6.95 W m-1 K-1 for the pristine CuGaTe2 sample to 2.98 W m-1 K-1 for the (Cu2Te)0.45(Ga2Te3)0.55 sample at room temperature. Furthermore, the high concentration of charge-neutral defects combination narrows the band gap and increases the carrier concentration, leading to an improved power factor of 1.58 mW/mK2 at 600 K for the (Cu2Te)0.49(Ga2Te3)0.51 sample, which is 41% higher than for the pristine CuGaTe2 sample. Consequently, the highest ZT value of 0.82 is achieved at 915 K for Cu0.015(Cu2Te)0.48(Ga2Te3)0.52, which represents an enhancement of about 22% over that of the pristine CuGaTe2 compound.

Design of mechanically intelligent structures: Review of modelling stimuli-responsive materials for adaptive structures

Smart materials are upcoming in many industries due to their unique properties and wide range of applicability. These materials have the potential to transform traditional engineering practices by enabling the development of more efficient, adaptive, and responsive systems. However, smart materials are characterized by nonlinear behaviour and complex constitutive models, posing challenges in modelling and simulation. Therefore, understanding their mechanical properties is crucial for model-based design. This review aims for advancements in numerically implementing various smart materials, especially focusing on their nonlinear deformation behaviours. Different mechanisms and functionalities, classification, constitutive models and applications of smart materials were analyzed. In addition, different numerical approaches for modelling across scales were investigated. This review also explored the strategies and implementations for mechanically intelligent structures using smart materials. In conclusion, the potential model-based design methodology for the multiple smart material-based structures is proposed, which provides guidance for the future development of mechanically intelligent structures in industrial applications.

High throughput screening of semiconductors with low lattice thermal transport induced by long-range interactions

Semiconductors with long-range interactions (LRI) due to resonant bonding exhibit delocalized electronic states and low lattice thermal conductivity, contributing to the efficiency of heat-to-electricity conversion. Here, we build a descriptor for high-throughput screening of LRI materials from the second-order interaction force constants. We identify 75 semiconducting candidates from the binary compounds in the MatHub-3d database that contain LRI. By analyzing the bonding properties of LRI atoms, we classify LRI in materials into two categories: type I and type II. In the structural unit of type I LRI, the atoms have strong bond connections, while a weak bond exists between the two groups in the structural unit of type II LRI. We have identified atypical type I LRI formed by Sb-Sb and Mg-Mg pairs in the emerging thermoelectric material Mg3Sb2, resulting in the softening of TA1 phonons and large anharmonicity. For type II LRI, the LRI of Ge-Ge and Se-Se pairs in R3m-GeSe can cross different layers. Moreover, we observe a combination of type II LRI and rattling effect in BaSe2 to restrict thermal transport. This work is of great significance for understanding the relationship between LRI and thermal transport properties, and for designing new LRI-induced low lattice thermal conductivity materials.

Elevating Thermoelectric Performance by Compositing Dibromo-Substituted Thienoacene with SWCNTs

Composites of organic small molecules (OSMs) and single-walled carbon nanotubes (SWCNTs) have drawn great attention as flexible thermoelectric (TE) materials in recent years. Here, we synthesized thieno[2',3':4,5]thieno[3,2-b]thieno[2,3-d]thiophene (TTA) and 2,6-dibromothieno[2',3':4,5]thieno[3,2-b]thieno[2,3-d]thiophene (TTA-2Br) and compounded them with SWCNTs, obtaining thermoelectric TTA/SWCNT and TTA-2Br/SWCNT composites. The introduction of the electron-withdrawing Br group was found to decrease the highest molecular orbital energy level and bandgap (Eg) of TTA-2Br. As a result, the Seebeck coefficient (S) and power factor (PF) of the OSM/SWCNT composite films were significantly improved. Moreover, suitable energy barrier between TTA-2Br and SWCNTs facilitates the energy filtering effect, which further enhances thermoelectric properties of the 40 wt % TTA-2Br/SWCNT composite film with optimum thermoelectric properties (PF = 242.59 ± 9.42 μW m-1 K-2 at room temperature), good thermal stability, and mechanical flexibility. In addition, the thermoelectric generator (TEG) prepared using 40 wt % TTA-2Br/SWCNT composite films and n-type SWCNT films can generate an output power of 102.8 ± 7.4 nW at a temperature difference of 20 °C. This work provides new insights into the preparation of OSM/SWCNT composites with significantly enhanced thermoelectric properties.

Microporous Zr-metal-organic frameworks based-nanocomposites for thermoelectric applications

In the area of energy storage and conversion, Metal-Organic Frameworks (MOFs) are receiving more and more attention. They combine organic nature with long-range order and low thermal conductivity, giving them qualities to be potentially attractive for thermoelectric applications. To make the framework electrically conductive so far, thermoelectricity in this class of materials requires infiltration by outside conductive guest molecules. In this study, an in-situ polymerization of conductive polyaniline inside the porous structure of MOF-801 was conducted to synthesize PANi@MOF-801 nanocomposites for thermoelectrical applications. The growth of polyaniline chains of different loadings inside the host MOF matrix generally enhanced bulk electrical conductivity by about 6 orders of magnitude, leading to Seebeck coefficient value of -141 µVK-1 and improved thermal stability. The unusual increase in electrical conductivity was attributed to the formation of highly oriented conductive PANi chains inside the MOF pores, besides host-guest physical interaction, while the Seebeck coefficient enhancement was because of the energy filtering effect of the developed structure. Modulating the composition of PANi@MOF-801 composites by varying the aniline: MOF-801 ratio in the synthesis bath from 2:1 and 1:1 to 1:2 leads to a change in the semiconductor properties from p-type semiconductor to n-type. Among the examined composites with n-type semiconducting properties exhibited the highest ZT value, 0.015, and lowest thermal conductivity, 0.24 Wm-1 K-1. The synthesized composites have better performance than those recently reported for a similar category of thermoelectric materials related to MOF-based composites.

All-Scale Hierarchical Structuring, Optimized Carrier Concentration, and Band Manipulation Lead to Ultra-High Thermoelectric Performance in Eco-Friendly MnTe

MnTe emerges as an enormous potential for medium-temperature thermoelectric applications due to its lead-free nature, high content of Mn in the earth's crust, and superior mechanical properties. Here, it is demonstrate that multiple valence band convergence can be realized through Pb and Ag incorporations, producing large Seebeck coefficient. Furthermore, the carrier concentration can be obviously enhance by Pb and Ag codoping, contributing to significant enhancement of power factor. Moreover, microstructural characterizations reveal that PbTe nanorods can be introduced into MnTe matrix by alloying Pb. This can modify the microstructure into all-scale hierarchical architectures (including PbTe nanorods, enhances point-defect scattering, dense dislocations and stacking faults), strongly lowering lattice thermal conductivity to a record low value of 0.376 W m-1 K-1 in MnTe system. As a result, an ultra-high ZT of 1.5 can be achieved in MnTe thermoelectric through all-scale hierarchical structuring, optimized carrier concentration, and valence band convergence, outperforming most of MnTe-based thermoelectric materials.

High-entropy materials for thermoelectric applications: towards performance and reliability

High-entropy materials (HEMs), including alloys, ceramics and other entropy-stabilized compounds, have attracted considerable attention in different application fields. This is due to their intrinsically unique concept and properties, such as innovative chemical composition, structural characteristics, and correspondingly improved functional properties. By establishing an environment with different chemical compositions, HEMs as novel materials possessing superior attributes present unparalleled prospects when compared with their conventional counterparts. Notably, great attention has been paid to investigating HEMs such as thermoelectrics (TE), especially for application in energy-related fields. In this review, we started with the basic definitions of TE fundamentals, the existing thermoelectric materials (TEMs), and the strategies adopted for their improvement. Moreover, we introduced HEMs, summarized the core effects of high-entropy (HE), and emphasized how HE will open up new avenues for designing high-entropy thermoelectric materials (HETEMs) with promising performance and high reliability. Through selecting and analyzing recent scientific publications, this review outlines recent scientific breakthroughs and the associated challenges in the field of HEMs for TE applications. Finally, we classified the different types of HETEMs based on their structure and properties and discussed recent advances in the literature.

Probing the thermoelectric properties of aluminium-doped copper iodide

Copper iodide, an environmentally friendly material abundant in nature, holds great significance for room temperature thermoelectric (TE) applications owing to its high Seebeck coefficient and optical transparency. However, to fully unlock its thermoelectric potential and match the performance of conventional TE materials, there is a need to further enhance its electrical conductivity. In this study, we have successfully synthesized nano-crystalline powders of both undoped and aluminium-doped CuI at room temperature using the chemical precipitation method in an ethanol medium. The concentration of aluminium dopant has been optimized to maximize TE performance. At 400 K, the highest TE power factor and figure of merit achieved are 79 μW m-1 K-2 and 0.08, respectively, for CuI doped with 0.1 mol% Al. This enhancement in TE properties can be attributed to the increased carrier density resulting from aluminium doping. The impact of aluminium doping on the temperature-dependent thermal conductivity has been investigated, and the findings are explained by the decay mechanism of optical phonons, supported by the anharmonic phonon coupling theory. Our work delves into the evolution of structural, thermal, optical, and TE properties of CuI upon aluminium (Al) doping. The results provide valuable insights into the future application of CuI in transparent thermoelectric and optoelectronic fields.

Ultra-Low Thermal Conductivity and Improved Thermoelectric Performance in Tungsten-Doped GeTe

Compared to SnTe and PbTe base materials, the GeTe matrix exhibits a relatively high Seebeck coefficient and power factor but has garnered significant attention due to its poor thermal transport performance and environmental characteristics. As a typical p-type IV-VI group thermoelectric material, W-doped GeTe material can bring additional enhancement to thermoelectric performance. In this study, the introduction of W, Ge1-xWxTe (x = 0, 0.002, 0.005, 0.007, 0.01, 0.03) resulted in the presence of high-valence state atoms, providing additional charge carriers, thereby elevating the material's power factor to a maximum PFpeak of approximately 43 μW cm-1 K-2, while slightly optimizing the Seebeck coefficient of the solid solution. Moreover, W doping can induce defects and promote slight rhombohedral distortion in the crystal structure of GeTe, further reducing the lattice thermal conductivity κlat to as low as approximately 0.14 W m-1 K-1 (x = 0.002 at 673 K), optimizing it to approximately 85% compared to the GeTe matrix. This led to the formation of a p-type multicomponent composite thermoelectric material with ultra-low thermal conductivity. Ultimately, W doping achieves the comprehensive enhancement of the thermoelectric performance of GeTe base materials, with the peak ZT value of sample Ge0.995W0.005Te reaching approximately 0.99 at 673 K, and the average ZT optimized to 0.76 in the high-temperature range of 573-723 K, representing an increase of approximately 17% compared to pristine GeTe within the same temperature range.

Effective Nonstoichiometric Strategy Combined Post-annealing Process for Boosting Thermoelectric Properties in n-Type PbTe

The intrinsic low electrical properties have hindered the enhancement of thermoelectric performance for n-type PbTe over a long period of time, primarily due to the generation of intrinsic Pb vacancies and other defects. In this work, PbTe samples with nonstoichiometric excess Pb atoms were successfully prepared by a melting reaction followed by spark plasma sintering. First, the introduction of precisely controlled excess Pb atoms has effectively eliminated the typical p-n transition phenomenon in PbTe systems by suppressing the generation of Pb vacancies. Further, the vacuum annealing process employed in nonstoichiometric samples increases the carrier mobility significantly because of the improved crystallinity and the lowered holes. Thus, the Hall mobility was optimized from 754.3 to 1215.9 cm2 V-1 s-1, while the power factor was ultimately elevated from 3087.8 to 4565.7 μW m-1 K-2 for the Pb1.03Te sample at 323 K. Benefited from the enhanced electrical transport properties near room temperature, an average zT ∼ 1.03 ranging from 323 to 723 K was achieved, demonstrating an outstanding performance in n-type nondoped PbTe. This work provides guidance for optimizing the thermoelectric performance of n-type PbTe and relevant telluride by reducing vacancies and other defects.

Improvement of Mechanical and Thermoelectric Properties of AgCuTe by Pinning Effect and Enhanced Liquid-Like Behavior via SiC Alloying

With the development and application of thermoelectric (TE) devices, it requires not only high-performance of TE materials but also high mechanical properties. Here, we report a medium-temperature liquid material, AgCuTe, with high mechanical properties. The results demonstrate that AgCuTe possesses a multiphase structure characterized by abundant grain boundaries, resulting in reduced lattice thermal conductivity and inherently high mechanical strength. Furthermore, nano-SiC was alloyed into the AgCuTe material to further improve its mechanical and TE properties. Nano-SiC exhibited a button-like distribution within the grain boundaries, introducing a pinning effect that significantly elevated the Vickers hardness of the samples. Additionally, nano-SiC induced strong lattice distortion energy in the vicinity, which promotes Ag/Cu ions to escape from the lattice and enhances the liquid-like behavior of Ag/Cu ions. Finally, these enhancements led to a 21% improvement in the mechanical properties and a 40% improvement in the TE properties for AgCuTe. Notably, AgCuTe achieved its peak TE performance, with a latest peak ZT value of 1.32 at 723 K. This research expands the potential applications of AgCuTe.

Revealing large room-temperature Nernst coefficients in 2D materials by first-principles modeling

Two-dimensional (2D) materials have attracted significant attention owing to their distinctive electronic, thermal, and mechanical characteristics. Recent advancements in both theoretical understanding and experimental methods have greatly contributed to the understanding of thermoelectric properties in 2D materials. However, thermomagnetic properties of 2D materials have not yet received the same amount of attention. In this work, we select promising 2D materials guided by the physics of the Nernst effect and present a thorough first-principles study of their electronic structures, carrier mobilities, and Nernst coefficients as a function of carrier concentration. Specifically, we reveal that trilayer graphene with an ABA stacking exhibits an exceptionally large Nernst coefficient of 112 μV (KT)-1 at room temperature. We further demonstrate that monolayer graphene, ABC-stacked trilayer graphene, and trilayer phosphorene (AAA stacking) have large Nernst coefficients at room temperature. This study establishes an ab initio framework for the quantitative study of the thermomagnetic effects in 2D materials and demonstrates high fidelity with previous experimental data.

Crystal Structure and Molten Salt Environment Cooperatively Controlling the Morphology of the Plate-like CaMnO3 Template through Topochemical Conversion

In the field of oxide thermoelectrics, perovskite CaMnO3 ceramics have drawn plenty of attention due to their chemical stability, low cost, and environmental friendliness. By employing Ruddlesden-Poppe phase Ca3Mn2O7 as a precursor, the plate-like CaMnO3 microcrystals were successfully synthesized by the molten salt method combined with topochemical microcrystal conversion (TMC). The plate-like morphology of CaMnO3 was coordinately optimized by modulating the crystal structure of MnO2 and the molten salt environment. Plate-like microcrystals with an average size of ∼14.55 μm and a thickness of ∼2.89 μm were obtained by TMC reaction, demonstrating an obvious anisotropy. When β-MnO2 was used as the raw material, a length-thickness ratio of 4.77 was obtained, which was attributed to the fact that CaMnO3 inherited the plate-like morphology of the Ca3Mn2O7 precursor during the TMC. The results confirm that the plate-like CaMnO3 microcrystals with obvious anisotropy can provide excellent template seeds for high-quality CaMnO3-based textured ceramics.

Enhanced Thermoelectric Performance of P-Type (Bi,Sb)2 Te3 by Incorporating Non-Stoichiometric Ag5 Te3 and Refining Te-Se Ratio

Power generation modules utilizing thermoelectric (TE) materials are suitable for recycling widespread low-grade waste heat (<600 K), highlighting the immediate necessity for advanced Bi2 Te3 -based alloys. Herein, the substantial enhancement in TE performance of the p-type Bi0.4 Sb1.6 Te3 (BST) sintered sample is realized by subtly incorporating the non-stoichiometric Ag5 Te3 and counteractive Se. Specifically, Ag atoms diffused into the BST lattice improve the density-of-states effective mass (md * ) and boost the hole concentration for the suppressed bipolar effect. The addition of Se further improves md * prompting the room-temperature power factor upgrade to 46 W cm-1  K-2 . Concurrently, the lattice thermal conductivity is considerably lowered by multiple scattering sources exemplified by Sb-rich nanoprecipitates and dense dislocations. These synergistic results yield a high peak ZT of 1.44 at 375 K and an average ZT of 1.28 between 300 and 500 K in the Bi0.4 Sb1.6 Te2.95 Se0.05 + 0.05 wt.% Ag5 Te3 sample. More significantly, when coupled with n-type zone-melted Bi2 Te2.7 Se0.3 , the integrated 17-pair TE module achieves a competitive conversion efficiency of 6.1% and an output power density of 0.40 W cm-2 at a temperature difference of 200 K, demonstrating great potential for practical applications.

A DFT approach to correlate the physical characteristics of novel chalcopyrites ASbN2(A = Li, Na) for green technology

Semiconductor chalcopyrite compounds have been a subject of research interest due to their diverse range of physical properties that have captured the attention of scientists. In this ongoing research, we have examined the physical characteristics of LiSbN2 and NaSbN2 chalcopyrites using DFT. The modified Becke-Johnson (mBJ) potential is utilized for the computation of electronic structures. The stability is attained with negative formation energies and optimization curves. A bandgap of 2.60 eV in LiSbN2 and 3.15 eV in NaSbN2 has been achieved, which is further endorsed by the density of states. An in-depth analysis of the optical properties unveils the potential utility of LiSbN2 and NaSbN2 in various photovoltaic devices, attributed to its pronounced absorption in the UV spectrum. The transport characteristics are also assessed through various transport characteristics. The large electrical conductivity and ZT values for both chalcopyrite compounds are attained. Due to their remarkable capability to convert heat into electricity, these materials display potential for use in thermoelectric devices.

Promoted Na Solubility and Modified Band Structure for Achieving Exceptional Average ZT by Extra Mn Doping in PbTe

Na doping strategy provides an effective avenue to upgrade the thermoelectric performance of PbTe-based materials by optimizing electrical properties. However, the limited solubility of Na inherently restricts the efficiency of doping, resulting in a relatively low average ZT, which poses challenges for the development and application of subsequent devices. Herein, to address this issue, the introduced spontaneous Pb vacancies and additional Mn doping synergistically promote Na solubility with a further modified valence band structure. Furthermore, the induced massive point defects and multiscale microstructure greatly strengthen the scattering of phonons over a wide frequency range, leading to a remarkable ultralow lattice thermal conductivity of ∼0.42 W m-1 K-1. As a result, benefiting from the significantly enhanced Seebeck coefficient and superior thermal transports, a high peak ZT of ∼2.1 at 773 K and an excellent average ZT of ∼1.4 between 303 and 823 K are simultaneously achieved in Pb0.93Na0.04Mn0.02Te. This work proposes a simple and constructive method to obtain high-performance PbTe-based materials and is promising for the development of thermoelectric power generation devices.

Interface Engineering for High-Performance Thermoelectric Carbon Nanotube Films

Carbon nanotubes (CNTs) stand out for their exceptional electrical, thermal, and mechanical attributes, making them highly promising materials for cutting-edge, lightweight, and flexible thermoelectric applications. However, realizing the full potential of advanced thermoelectric CNTs requires precise management of their electrical and thermal characteristics. This study, through interface optimization, demonstrates the feasibility of reducing the thermal conductivity while preserving robust electrical conductivity in single-walled CNT films. Our findings reveal that blending two functionalized CNTs offers a versatile method of tailoring the structural and electronic properties of CNT films. Moreover, the modified interface exerts a substantial influence over thermal and electrical transfer, effectively suppressing heat dissipation and facilitating thermoelectric power generation within CNT films. As a result, we have successfully produced both p- and n-type thermoelectric CNTs, attaining impressive power factors of 507 and 171 μW/mK2 at room temperature, respectively. These results provide valuable insights into the fabrication of high-performance thermoelectric CNT films.

Extremely Low Lattice Thermal Conductivity and Significantly Enhanced Near-Room-Temperature Thermoelectric Performance in α-Cu2Se through the Incorporation of Porous Carbon

In this work, a series of Cu2Se/x wt % porous carbon (PC) (x = 0, 0.2, 0.4, 0.6, 0.8, 1) composite materials were synthesized by ball milling and spark plasma sintering (SPS). The highly ordered porous carbon was synthesized by a hydrothermal method using mesoporous silica (SBA-15) as the template. X-ray diffraction results show that the incorporation of porous carbon induces a phase transition of Cu2Se from the β phase to the α phase. Meanwhile, the addition of porous carbon reduces the carrier concentration from 2.7 × 1021 to 2.45 × 1020 cm-3 by 1 order of magnitude. The decrease of the carrier concentration leads to the reduction of electrical conductivity and the increase of the Seebeck coefficient, which results in the enhancement of the power factor. On the other hand, the incorporation of porous carbon into Cu2Se increases the porosity of the composites and also introduces more interfaces between the two materials, which is evidenced by positron annihilation lifetime measurements. Both pores and interfaces greatly enhance phonon scattering, leading to extremely low lattice thermal conductivity. In addition, the decrease of electrical conductivity also causes a sufficient reduction in electronic thermal conductivity. Due to the above synergistic effects, the thermoelectric performance of the Cu2Se/PC composite is significantly enhanced with a maximum ZT value of 0.92 at 403 K in the Cu2Se/1 wt % PC composite, which is close to that of the Bi2Te3-based materials. Our work shows that α-Cu2Se has great potential for near-room-temperature thermoelectric materials.

Advanced Nanoscale Materials for Thermoelectric Applications

Recently, there has been growing academic interest in researching thermoelectric materials that exhibit energy conversion capability between thermal energy and electricity, providing solutions to energy crises and environmental pollution [...].

Transitional structure of {0001} twin in a deformed p-type (Bi,Sb)2Te3 alloy: a direct experimental basis for understanding the twinning mechanism

Twin boundaries provide a strong phonon scattering center to hinder the lattice thermal conductivity in thermoelectric materials, but the underlying evolution process of deformation twinning remains to be figured out. By applying atomic resolution transmission electron microscope (TEM) observations, a novel type of transitional structure of {0001} twin was observed, for the first time, in the p-type (Bi,Sb)2Te3 alloy subjected to three-point bending deformation. The transformation from matrix to (0001) twin can be realized by the following path: matrix → transitional twin → (0001) twin, and this process was completed by the gliding of a total of four partial dislocations (b1 = 1/3[011̄0]) extended in the different (0001) planes. This new finding here will shed light on the nucleation and growth of deformation twins in the p-type (Bi, Sb)2Te3 alloy.

Highly Antifreezing Thermogalvanic Hydrogels for Human Heat Harvesting in Ultralow Temperature Environments

Thermogalvanic hydrogels have been quickly developed and are widely used in thermal energy harvesting. However, the freezing behaviors of thermogalvanic hydrogels at subzero temperatures greatly limit their practical applications. Herein, we design an antifreezing thermogalvanic hydrogel based on [Fe(CN)6]3-/4- ions for thermoelectric power generation in ultralow temperature environments. The antifreezing thermogalvanic hydrogels show excellent flexibility at -80 °C owing to the hydrogen bonding between ethylene glycol and water molecules. Even after 500 cyclic tensile strains, the thermogalvanic hydrogels can still maintain excellent mechanical stability, and the Seebeck coefficient is as high as 1.43 mV/K, corresponding to a large retention rate of ∼95%. Moreover, we demonstrate a wearable thermoelectric shoe based on antifreezing thermogalvanic hydrogels for harvesting human thermal energy in a simulated winter environment of -30 °C, and the electricity can drive a green LED. This work provides important guidance for the design and optimization of antifreezing thermogalvanic hydrogels.

Rb(Zn,Cu)4As3 as a New High-Efficiency Thermoelectric Material

The thermoelectric performance of RbZn4-xCuxAs3 crystallized in the KCu4S3-type structure was investigated. Samples were synthesized via solid-state reactions, followed by hot pressing. Hole carriers were doped by substituting Zn with Cu until x = 0.02, resulting in an increase of the power factor from 0.049 to 0.52 mW/mK2 at T = 797 K. The lattice thermal conductivity was substantially low, with a value of 1.61 W/mK at T = 312 K, independent of doping. This can be attributed to the large vibration of the Rb atoms, as demonstrated by the neutron diffraction analysis. The maximum dimensionless figure of merit, ZT, was 0.53 at T = 797 K, representing the highest value for the 143-Zintl compounds. The result indicated that the 143-Zintl compounds could be a new class of high-performance thermoelectric materials.

Lattice Thermal Conductivity of Mg3(Bi,Sb)2 Nanocomposites: A First-Principles Study

Mg3(BixSb1-x)2 (0 ≤ x ≤ 1) nanocomposites are a highly appealing class of thermoelectric materials that hold great potential for solid-state cooling applications. Tuning of the lattice thermal conductivity is crucial for improving the thermoelectric properties of these materials. Hereby, we investigated the lattice thermal conductivity of Mg3(BixSb1-x)2 nanocomposites with varying Bi content (x = 0.0, 0.25, 0.5, 0.75, and 1.0) using first-principles calculations. This study reveals that the lattice thermal conductivity follows a classical inverse temperature-dependent relationship. There is a significant decrease in the lattice thermal conductivity when the Bi content increases from 0 to 0.25 or decreases from 1.0 to 0.75 at 300 K. In contrast, when the Bi content increases from 0.25 to 0.75, the lattice thermal conductivity experiences a gradual decrease and reaches a plateau. For the nanohybrids (x = 0.25, 0.5, and 0.75), the distribution patterns of the phonon group velocity and phonon lifetime are similar, with consistent distribution intervals. Consequently, the change in lattice thermal conductivity is not pronounced. However, the phonon group speed and phonon lifetime are generally lower compared to those of the pristine components with x = 0 and x = 1.0. Our results suggest that the lattice thermal conductivity is sensitive to impurities but not to concentrations. This research provides valuable theoretical insights for adjusting the lattice thermal conductivity of Mg3(BixSb1-x)2 nanocomposites.

Evolution of Thermoelectric Generators: From Application to Hybridization

Considerable thermal energy is emitted into the environment from human activities and equipment operation in the course of daily production. Accordingly, the use of thermoelectric generators (TEGs) can attract wide interest, and it shows high potential in reducing energy waste and increasing energy recovery rates. Notably, TEGs have aroused rising attention and been significantly boosted over the past few years, as the energy crisis has worsened. The reason for their progress is that thermoelectric generators can be easily attached to the surface of a heat source, converting heat energy directly into electricity in a stable and continuous manner. In this review, applications in wearable devices, and everyday life are reviewed according to the type of structure of TEGs. Meanwhile, the latest progress of TEGs' hybridization with triboelectric nanogenerator (TENG), piezoelectric nanogenerator (PENG), and photovoltaic effect is introduced. Moreover, prospects and suggestions for subsequent research work are proposed. This review suggests that hybridization of energy harvesting, and flexible high-temperature thermoelectric generators are the future trends.

Anisotropic ductility and thermoelectricity of van der Waals GeAs

Wearable thermoelectric applications require materials with both high energy conversion efficiency and excellent flexibility/deformability. Inorganic thermoelectric materials have shown high conversion efficiency, but they are usually brittle and have poor mechanical flexibility, which makes their integration into flexible devices a challenging task. GeAs is a group IV-V binary compound with a van der Waals layered structure, and its thermoelectric response has been reported. Herein, we investigate the mechanical and thermoelectric properties of GeAs crystal by a combination of density functional theory and density functional perturbation theory methods. Our results show that GeAs features a moderately dispersive valence band and multivalley convergence, which give rise to a large Seebeck coefficient and power factor when it is properly p-doped. Remarkably, its electrical transport in the out-of-plane direction even outperforms that in the in-plane direction, while phonon transport is suppressed, leading to a predominant thermoelectric response in the vertical direction. More interestingly, GeAs demonstrates a structural stiffness higher than thermoelectric CuInTe2 and PbTe, and a ductility ratio comparable to a recently discovered plastic semiconductor, InSe. The stress-strain curve simulation reveals that GeAs can withstand deformations up to 20%. These findings showcase GeAs as a ductile thermoelectric material suitable for wearable devices and energy conversion.

Investigation of Temperature-Dependent Phonon Anharmonicity and Thermal Transport in SnS Single Crystals

Tin sulfide has outstanding thermoelectric properties in the b-axis direction of crystallography as a IV-VI group layered compound, which arouses great attention. In this study, temperature-dependent Raman spectroscopy (TDRS) is used to quantify the phonon anharmonicity in SnS crystals from 77 to 475 K, where the three-phonon process dominates in this temperature region. Moreover, integration of the four-phonon process and lattice thermal expansion will better describe the temperature-dependent Raman experimental phenomenon. The good agreement between the calculated and experimental lattice thermal conductivity confirms the three-phonon scattering process is the dominant scattering mechanism at this temperature range. Further, combining the atomic thermal displacement and charge density through density functional theory calculation, the inherently low thermal conductivity of SnS is because of strong lattice anharmonicity, which is brought by the presence of asymmetric chemical bonding resulting from the Sn 5s2 lone pair electrons. These results provide key insights for studying thermal properties of other low-dimensional materials.

Advancing Thermoelectric Materials: A Comprehensive Review Exploring the Significance of One-Dimensional Nano Structuring

Amidst the global challenges posed by pollution, escalating energy expenses, and the imminent threat of global warming, the pursuit of sustainable energy solutions has become increasingly imperative. Thermoelectricity, a promising form of green energy, can harness waste heat and directly convert it into electricity. This technology has captivated attention for centuries due to its environmentally friendly characteristics, mechanical stability, versatility in size and substrate, and absence of moving components. Its applications span diverse domains, encompassing heat recovery, cooling, sensing, and operating at low and high temperatures. However, developing thermoelectric materials with high-performance efficiency faces obstacles such as high cost, toxicity, and reliance on rare-earth elements. To address these challenges, this comprehensive review encompasses pivotal aspects of thermoelectricity, including its historical context, fundamental operating principles, cutting-edge materials, and innovative strategies. In particular, the potential of one-dimensional nanostructuring is explored as a promising avenue for advancing thermoelectric technology. The concept of one-dimensional nanostructuring is extensively examined, encompassing various configurations and their impact on the thermoelectric properties of materials. The profound influence of one-dimensional nanostructuring on thermoelectric parameters is also thoroughly discussed. The review also provides a comprehensive overview of large-scale synthesis methods for one-dimensional thermoelectric materials, delving into the measurement of thermoelectric properties specific to such materials. Finally, the review concludes by outlining prospects and identifying potential directions for further advancements in the field.

Waste heat recovery research - a systematic bibliometric analysis (1991 to 2020)

Human usage of non-renewable energy resources has caused many environmental issues, which include air pollution, global warming, and climate irregularities. To counter these issues, researchers have been seeking after alternative renewable energy sources and ways to manage energy more efficiently. This is where energy recovery technologies such as waste heat recovery (WHR) come into play. WHR is a form of waste to energy conversion. Waste heat can be captured and converted into usable energy instead of dumping it into the environment. In the more recent years, the WHR research field has gained great attention in the scientific community as well as in some energy-intensive industries. This article presents a bibliometric overview of the academic research on WHR over the span of 30 years from 1991 to 2020. A total of 5682 documents from Web of Science (WoS) have been retrieved and analyzed using various bibliometric methods, including performance analysis and network analysis. The analyses were performed on different actors in the field, i.e., funding agencies, journals, authors, organizations, and countries. In addition, several network mappings were done based on co-citation, co-authorship, and co-occurrences of keywords analyses. The research identified the most productive and influential actors in the field, established and emergent research topics, as well as the interrelations and collaboration patterns between different actors. The findings can be a robust roadmap for further research in this field.

Nanostructured Thermoelectric Films Synthesised by Spark Ablation and Their Oxidation Behaviour

Reducing the thermal conductivity of thermoelectric materials has been a field of intense research to improve the efficiency of thermoelectric devices. One approach is to create a nanostructured thermoelectric material that has a low thermal conductivity due to its high number of grain boundaries or voids, which scatter phonons. Here, we present a new method based on spark ablation nanoparticle generation to create nanostructured thermoelectric materials, demonstrated using Bi₂Te₃. The lowest achieved thermal conductivity was <0.1 W m-1 K-1 at room temperature with a mean nanoparticle size of 8±2 nm and a porosity of 44%. This is comparable to the best published nanostructured Bi₂Te₃ films. Oxidation is also shown to be a major issue for nanoporous materials such as the one here, illustrating the importance of immediate, air-tight packaging of such materials after synthesis and deposition.

Realizing Excellent Structural and Thermoelectric Performance in Mg3Sb2-Based Alloys by Manipulating Mg Intrinsic Migration Kinetics with Interstitial Ni Doping

N-type Mg₃Sb₂ is attracting increasing focus for its outstanding room-temperature (RT) thermoelectric (TE) performance; however, achieving reliable n-type conduction remains challenging due to negatively charged Mg vacancies. Doping with compensation charges is generally used but does not fundamentally resolve the high intrinsic activity and easy formation of Mg vacancies. Herein, a robust structural and thermoelectric performance is obtained by manipulating Mg intrinsic migration activity by precisely incorporating Ni at the interstitial site. Density functional theory (DFT) indicates that a strong performance originates from a significant thermodynamic preference for Ni occupying the interstitial site across the complete Mg-poor to -rich window, which dramatically promotes the Mg migration barrier and kinetically immobilizes Mg. As a result, the detrimental vacancy-associated ionized scattering is eliminated with a leading room-temperature ZT up to 0.85. This work reveals that interstitial occupation in Mg₃Sb₂-based materials is a novel approach promoting both structural and thermoelectric performance.

High Thermoelectric Performance of a Novel γ-PbSnX2 (X = S, Se, Te) Monolayer: Predicted Using First Principles

Two-dimensional (2D) group IV metal chalcogenides are potential candidates for thermoelectric (TE) applications due to their unique structural properties. In this paper, we predicted a 2D monolayer group IV metal chalcogenide semiconductor γ-PbSn₂ (X = S, Se, Te), and first-principles calculations and Boltzmann transport theory were used to study the thermoelectric performance. We found that γ-PbSnX₂ had an ultra-high carrier mobility of up to 4.04 × 10³ cm² V^-1 s^-1, which produced metal-like electrical conductivity. Moreover, γ-PbSn₂ not only has a very high Seebeck coefficient, which leads to a high power factor, but also shows an intrinsically low lattice thermal conductivity of 6-8 W/mK at room temperature. The lower lattice thermal conductivity and high power factors resulted in excellent thermoelectric performance. The ZT values of γ-PbSnS₂ and γ-PbSnSe₂ were as high as 2.65 and 2.96 at 900 K, respectively. The result suggests that the γ-PbSnX₂ monolayer is a better candidates for excellent thermoelectric performance.

Compositing effects for high thermoelectric performance of Cu2Se-based materials

Thermoelectric materials can realize direct conversion between heat and electricity, showing excellent potential for waste heat recovery. Cu2Se is a typical superionic conductor thermoelectric material having extraordinary ZT values, but its superionic feature causes poor service stability and low mobility. Here, we reported a fast preparation method of self-propagating high-temperature synthesis to realize in situ compositing of BiCuSeO and Cu2Se to optimize the service stability. Additionally, using the interface design by introducing graphene in these composites, the carrier mobility could be obviously enhanced, and the strong phonon scatterings could lead to lower lattice thermal conductivity. Ultimately, the Cu2Se-BiCuSeO-graphene composites presented excellent thermoelectric properties with a ZTmax value of ~2.82 at 1000 K and a ZTave value of ~1.73 from 473 K to 1000 K. This work provides a facile and effective strategy to largely improve the performance of Cu2Se-based thermoelectric materials, which could be further adopted in other thermoelectric systems.

Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in Ge1-x-yBixCayTe with Ultrafine Ferroelectric Domain Structure

GeTe and its derivatives emerging as a promising lead-free thermoelectric candidate have received extensive attention. Here, a new route was proposed that the minimization of κ_L in GeTe through considerable enhancement of acoustic phonon scattering by introducing ultrafine ferroelectric domain structure. We found that Bi and Ca dopants induce strong atomic strain disturbance in the GeTe matrix because of large differences in atom radius with host elements, leading to the formation of ultrafine ferroelectric domain structure. Furthermore, large strain field and mass fluctuation induced by Bi and Ca codoping result in further reduced κ_L by effectively shortening the phonon relaxation time. The co-existence of ultrafine ferroelectric domain structure, large strain field, and mass fluctuation contribute to an ultralow lattice thermal conductivity of 0.48 W m^-1 K^-1 at 823 K. Bi and Ca codoping significantly enhances the Seebeck coefficient and power factor through reducing the energy offset between light and heavy valence bands of GeTe. The modified band structure boosts the power factor up to 47 μW cm^-1 K^-2 in Ge_0.85Bi_0.09Ca_0.06Te. Ultimately, a high ZT of ∼2.2 can be attained. This work demonstrates a new design paradigm for developing high-performance thermoelectric materials.