Selective Functionalization of Graphene at Defect-Activated Sites by Arylazocarboxylic tert-Butyl Esters

Covalent functionalization by using blue light activated radicals: on the reaction mechanisms of arylazo sulfone binding on graphene

Covalent functionalization of graphene presents a pivotal strategy to enhance its surface properties and overcome inherent chemical inertness. While diazonium salts have been extensively utilized for this purpose, their limitations necessitate exploration of alternative approaches. Arylazo sulfones, such as diazonium salt derivatives serving as chromophores, offer a promising solution, enabling photochemical reactions under visible light. Here, we propose a novel method for rapid covalent photofunctionalization of chemical vapor deposition (CVD) graphene on copper substrates using arylazo sulfones. The generation of aryl radicals - chlorobenzene in this case - was achieved through blue light LED irradiation of 4-chlorophenylazo methyl sulfone solution in acetonitrile. Efficient surface covalent modification of graphene was verified by observing (i) the photogeneration of radicals with a decrease in the π-π* band absorbance and an increase in the n-π* of arylazosulfone solution by UV-Vis spectroscopy; (ii) an increase in C sp3 defects on graphene from the Raman D band, the Auger C KLL signal and graphene C 1s X-ray photoelectron spectroscopy (XPS); and (iii) the presence of the chlorobenzene XPS Cl 2p signal. The aryl radical generation was enhanced by the copper substrate during irradiation, with a possible double path reaction mechanism. This approach highlights the versatility of arylazo sulfones in covalently patterning graphene surfaces, thus unlocking opportunities by overcoming the current approach consisting of the deposition of resist materials with successive cycles of lithography and electrochemistry.

Evidence for Trans-Oligoene Chain Formation in Graphene Induced by Iodine

Functionalization of pristine graphene by hydrogen and fluorine is well studied, resulting in graphane and fluorographene structures. In contrast, functionalization of pristine graphene with iodine has not been reported. Here, the functionalization of graphene with iodine using photochemical activation is presented, which is thermally reversible at 400 °C. Additional dispersive dominant Raman modes that are probed by resonance Raman spectroscopy are observed. Additionally, iodinated graphene is probed by Kelvin probe force microscopy and by transport measurements showing p-doping surpassing non-covalent iodine doping by charge transfer-complex formation. The emergent Raman modes combined with strong p-doping indicate that iodine functionalization is distinct from simple iodine doping. A reaction mechanism based on these findings is proposed, identifying the large size of iodine atoms as the probable cause governing regiochemically controlled addition due to steric hinderance of reactive sites. The modification of the electronic structure is explained by the confinement of 1D trans-oligoene chains between sp3-defects. These results demonstrate the uniqueness of iodine reactivity toward graphene and the modification of the electronic structure of iodinated graphene, highlighting its dependence on the spatial arrangement of substituents.

Influence of Lattice Defects on Trans-Oligoene Substructure Formation in Graphene

The photochemical reaction of iodine and graphene induces strong new Raman modes due to the formation of trans-oligoene substructures in graphene domains. This unique reactivity was demonstrated before on defect-free graphene, however leaving the influence of e. g. carbon vacancies, unexplored. Here, we investigate the photochemical reaction applied on graphene with varying average distances of lattice defects and statistically analyze the characteristic Raman modes which develop with the iodination reaction. We show that the iodination reaction does not lead to Raman-active defects and thus, the newly formed trans-oligoene substructures do not contribute to the D-mode of graphene. A statistical analysis reveals the correlation between the average distance of lattice defects and the intensity of the v1-mode. For defective graphene with average defect distances below ~1 nm no new Raman modes evolve, which is the lower limit of the substructure size probed at 532 nm and explains why this observation was not possible before using common graphene oxide as graphene source.

Graphene: Preparation, tailoring, and modification

Graphene is a 2D material with fruitful electrical properties, which can be efficiently prepared, tailored, and modified for a variety of applications, particularly in the field of optoelectronic devices thanks to its planar hexagonal lattice structure. To date, graphene has been prepared using a variety of bottom-up growth and top-down exfoliation techniques. To prepare high-quality graphene with high yield, a variety of physical exfoliation methods, such as mechanical exfoliation, anode bonding exfoliation, and metal-assisted exfoliation, have been developed. To adjust the properties of graphene, different tailoring processes have been emerged to precisely pattern graphene, such as gas etching and electron beam lithography. Due to the differences in reactivity and thermal stability of different regions, anisotropic tailoring of graphene can be achieved by using gases as the etchant. To meet practical requirements, further chemical functionalization at the edge and basal plane of graphene has been extensively utilized to modify its properties. The integration and application of graphene devices is facilitated by the combination of graphene preparation, tailoring, and modification. This review focuses on several important strategies for graphene preparation, tailoring, and modification that have recently been developed, providing a foundation for its potential applications.

Influence of the coffee-ring effect and size of flakes of graphene oxide films on their electrochemical reduction

Electrodes for electrochemical reduction of graphene oxide (GO) are coated with thin films using drop-casting and evaporation-assisted self-assembly. The influence of loading, the size of the flakes of GO, and the macroscopic coffee-ring effect occurring during drying are investigated. The effective transfer of protons and electrons in the electrochemical reduction of GO is decisive.

Regiochemically Oxo-functionalized Graphene, Guided by Defect Sites, as Catalyst for Oxygen Reduction to Hydrogen Peroxide

Heteroatom-doped graphene attracted tremendous attention because of advanced electrocatalytic properties, for example, for oxygen reduction. However, the role of oxygen atoms as heteroatoms in graphene should be explored more deeply. Here, we used statistical Raman spectroscopy for single-layer material analysis and found that the regiochemistry close to vacancy defects plays a decisive role. Accordingly, defects possess a guiding effect on the introduction of oxygen functional groups close to those defect-sites. After the addition of oxo-groups close to vacancy defects, the activity and hydrogen peroxide (H₂O₂) selectivity of the material on hydrogen peroxide production improved significantly. The selectivity of H₂O₂ is above 84%, which is higher than the initial oxo-functionalized graphene and electrochemically reduced graphene. The half-wave potential is 0.73 V_RHE, which is more positive than the initial oxo-functionalized graphene.

Generation of aryl radicals by redox processes. Recent progress in the arylation methodology

Arylation methods based on the generation and use of aryl radicals have been a rapidly growing field of research in recent years and currently represent a powerful strategy for carbon – carbon and carbon – heteroatom bond formation. The progress in this field is related to advances in the methods for generation of aryl radicals. The currently used aryl radical precursors include aryl halides, aryldiazonium and diaryliodonium salts, arylcarboxylic acids and their derivatives, arylboronic acids, arylhydrazines, organosulfur(II, VI) compounds and some other compounds. Aryl radicals are generated under mild conditions by single electron reduction or oxidation of precursors induced by conventional reagents, visible light or electric current. A crucial role in the development of the radical arylation methodology belongs to photoredox processes either catalyzed by transition metal complexes or organic dyes or proceeding without catalysts. Unlike the conventional transition metal-catalyzed arylation methods, radical arylation reactions proceed very often at room temperature and have high functional group tolerance. Without claiming to be exhaustive, this review covers the most important advances of the current decade in the generation and synthetic applications of (het)aryl radicals. Examples of reactions are given and mechanistic insights are highlighted.

The bibliography includes 341 references.

Identification of Semiconductive Patches in Thermally Processed Monolayer Oxo-Functionalized Graphene

The thermal decomposition of graphene oxide (GO) is a complex process at the atomic level and not fully understood. Here, a subclass of GO, oxo-functionalized graphene (oxo-G), was used to study its thermal disproportionation. We present the impact of annealing on the electronic properties of a monolayer oxo-G flake and correlated the chemical composition and topography corrugation by two-probe transport measurements, XPS, TEM, FTIR and STM. Surprisingly, we found that oxo-G, processed at 300 °C, displays C-C sp3 -patches and possibly C-O-C bonds, next to graphene domains and holes. It is striking that those C-O-C/C-C sp3 -separated sp2 -patches a few nanometers in diameter possess semiconducting properties with a band gap of about 0.4 eV. We propose that sp3 -patches confine conjugated sp2 -C atoms, which leads to the local semiconductor properties. Accordingly, graphene with sp3 -C in double layer areas is a potential class of semiconductors and a potential target for future chemical modifications.

Influence of SiO2 or h-BN substrate on the room-temperature electronic transport in chemically derived single layer graphene

The substrate effect on the electronic transport of graphene with a density of defects of about 0.5% (0.5%G) is studied. Devices composed of monolayer 0.5%G, partially deposited on SiO2 and h-BN were used for transport measurements. We find that the 0.5%G on h-BN exhibits ambipolar transfer behaviours under ambient conditions, in comparison to unipolar p-type characters on SiO2 for the same flake. While intrinsic defects in graphene cause scattering, the use of h-BN as a substrate reduces p-doping.