Robust DNA-Bridged Memristor for Textile Chips

Overview of Memristor-Based Design for Analog Applications

Memristor-based design has gained significant attention in recent years due to its potential to revolutionize various fields such as artificial intelligence, neuromorphic computing, non-volatile memory, signal processing, filtering, and radio frequency design. These emerging devices offer unique advantages such as non-volatile memory, low power consumption, and a high integration density. Their scalability and compatibility with existing fabrication processes make them an attractive option for industry adoption, paving the way for faster and more efficient architecture design. Researchers are actively exploring ways to optimize memristor technology for practical applications to harness its full potential. This includes developing novel materials and structures as well as improving the reliability and performance of memristors in various applications. This paper provides a comprehensive overview of the current advancements in memristor technology and their potential impact on the design of future electronic systems, focusing on its applications in the analog domain. By exploring the latest research and development in this field, researchers can gain valuable insights into how analog memristors can be integrated into their designs to achieve enhanced performance and efficiency. The paper delves into the fundamental principles of memristor technology, exploring its unique characteristics and advantages over traditional electronic components. It discusses the potential impact of memristors and challenges in the analog field of electronics, and highlights the progress made in their integration with existing circuitry, enabling novel functionalities and improved performance. Furthermore, it highlights ongoing research efforts to improve the performance and reliability of memristors, as well as the potential limitations and challenges that need to be addressed for widespread adoption, including variability in performance and reliability.

In Situ Unveiling of the Resistive Switching Mechanism of Halide Perovskite-Based Memristors

The organic-inorganic halide perovskite has become one of the most promising candidates for next-generation memory devices, i.e. memristors, with excellent performance and solution-processable preparation. Yet, the mechanism of resistive switching in perovskite-based memristors remains ambiguous due to a lack of in situ visualized characterization methods. Here, we directly observe the switching process of perovskite memristors with in situ photoluminescence (PL) imaging microscopy under an external electric field. Furthermore, the corresponding element composition of conductive filaments (CFs) is studied, indicating that the metallic CFs with respect to the activity of the top electrode are essential for device performance. Finally, electrochemical impedance spectroscopy (EIS) is conducted to reveal that the transition of ion states is associated with the formation of metallic CFs. This study provides in-depth insights into the switching mechanism of perovskite memristors, paving a pathway to develop and optimize high-performance perovskite memristors for large-scale applications.

Fiber Crossbars: An Emerging Architecture of Smart Electronic Textiles

Smart wearables have a significant impact on people's daily lives, enabling personalized motion monitoring, realizing the Internet of Things, and even reshaping the next generation of telemedicine systems. Fiber crossbars (FCs), constructed by crossing two fibers, have become an emerging architecture among the accessible structures of state-of-the-art smart electronic textiles. The mechanical, chemical, and electrical interactions between crossing fibers result in extensive functionalities, leading to the significant development of innovative electronic textiles employing FCs as their basic units. This review provides a timely and comprehensive overview of the structure designs, material selections, and assembly techniques of FC-based devices. The recent advances in FC-based devices are summarized, including multipurpose sensing, multiple-mode computing, high-resolution display, high-efficient power supply, and large-scale textile systems. Finally, current challenges, potential solutions, and future perspectives for FC-based systems are discussed for their further development in scale-up production and commercial applications.

Superlow Power Consumption Memristor Based on Borphyrin-Deoxyribonucleic Acid Composite Films as Artificial Synapse for Neuromorphic Computing

Memristor synapses based on green and pollution-free organic materials are expected to facilitate biorealistic neuromorphic computing and to be an important step toward the next generation of green electronics. Metalloporphyrin is an organic compound that widely exists in nature with good biocompatibility and stable chemical properties, and has already been used to fabricate memristors. However, the application of metalloporphyrin-based memristors as synaptic devices still faces challenges, such as realizing a high switching ratio, low power consumption, and bidirectional conductance modulation. We developed a memristor that improves the resistive switching (RS) characteristics of Zn(II)meso-tetra(4-carboxyphenyl) porphine (ZnTCPP) by combining it with deoxyribonucleic acid (DNA) in a composite film. The as-fabricated ZnTCPP-DNA-based device showed excellent RS memory characteristics with a sufficiently high switching ratio of up to ∼104, super low power consumption of ∼39.56 nW, good cycling stability, and data retention capability. Moreover, bidirectional conductance modulation of the ZnTCPP-DNA-based device can be controlled by modulating the amplitudes, durations, and intervals of positive and negative pulses. The ZnTCPP-DNA-based device was used to successfully simulate a series of synaptic functions including long-term potentiation, long-term depression, spike time-dependent plasticity, paired-pulse facilitation, excitatory postsynaptic current, and human learning behavior, which demonstrates its potential applicability to neuromorphic devices. A two-layer artificial neural network was used to demonstrate the digit recognition ability of the ZnTCPP-DNA-based device, which reached 97.22% after 100 training iterations. These results create a new avenue for the research and development of green electronics and have major implications for green low-power neuromorphic computing in the future.

Rationally Designing High-Performance Versatile Organic Memristors through Molecule-Mediated Ion Movements

Organic memory has attracted tremendous attention for next-generation electronic elements for the molecules' striking ease of structural design. However, due to them being hardly controllable and their low ion transport, it is always essential and challenge to effectively control their random migration, pathway, and duration. There are very few effective strategies, and specific platforms with a view to molecules with specific coordination-groups-regulating ions have been rarely reported. In this work, as a generalized rational design strategy, the well-known tetracyanoquinodimethane (TCNQ) is introduced with multiple coordination groups and small plane structure into a stable polymers framework to modulate Ag migration and then achieve high-performance devices with ideal productivity, low operation voltage and power, stable switching cycles, and state retention. Raman mapping demonstrates that the migrated Ag can specially coordinate with the embedded TCNQ molecules. Notably, the TCNQ molecule distribution can be modulated inside the polymer framework and regulate the memristive behaviors through controlling the formed Ag conductive filaments (CFs) as demonstrated by Raman mapping, in situ conductive atomic force microscopy (C-AFM), X-ray diffraction (XRD) and depth-profiling X-ray photoelectron spectroscopy (XPS). Thus the controllable molecule-mediated Ag movements show its potential in rationally designing high-performance devices and versatile functions and is enlightening in constructing memristors with molecule-mediated ion movements.

Realization of Artificial Nerve Synapses Based on Biological Threshold Resistive Random Access Memory

A one-selector one resistor (1S1R) array formed of a selector and resistive random access memory (RRAM) is an important way to achieve high-density storage and neuromorphic computing. However, the low durability and poor consistency of the selector limit its practical application. The fabrication of a selector based on egg albumen (EA) is reported in this paper. The device exhibits excellent bidirectional threshold switching characteristics, including a low leakage current (10-7  A), a high ON/OFF current ratio (106 ), and good endurance (>700 days). It is used as a selector to form a 1S1R unit in combination with an EA-based RRAM to effectively solve the leakage current in a crossbar array. A feasible solution is provided for the realization of a protein-based 1S1R array to achieve high-density storage. The 1S1R unit shows characteristics similar to those of synapses in the human brain under impulse excitation and has great potential in simulating the human brain for neuromorphic calculations.).

A review of memristor: material and structure design, device performance, applications and prospects

With the booming growth of artificial intelligence (AI), the traditional von Neumann computing architecture based on complementary metal oxide semiconductor devices are facing memory wall and power wall. Memristor based in-memory computing can potentially overcome the current bottleneck of computer and achieve hardware breakthrough. In this review, the recent progress of memory devices in material and structure design, device performance and applications are summarized. Various resistive switching materials, including electrodes, binary oxides, perovskites, organics, and two-dimensional materials, are presented and their role in the memristor are discussed. Subsequently, the construction of shaped electrodes, the design of functional layer and other factors influencing the device performance are analyzed. We focus on the modulation of the resistances and the effective methods to enhance the performance. Furthermore, synaptic plasticity, optical-electrical properties, the fashionable applications in logic operation and analog calculation are introduced. Finally, some critical issues such as the resistive switching mechanism, multi-sensory fusion, system-level optimization are discussed.

Soft Fiber Electronics Based on Semiconducting Polymer

Fibers, originating from nature and mastered by human, have woven their way throughout the entire history of human civilization. Recent developments in semiconducting polymer materials have further endowed fibers and textiles with various electronic functions, which are attractive in applications such as information interfacing, personalized medicine, and clean energy. Owing to their ability to be easily integrated into daily life, soft fiber electronics based on semiconducting polymers have gained popularity recently for wearable and implantable applications. Herein, we present a review of the previous and current progress in semiconducting polymer-based fiber electronics, particularly focusing on smart-wearable and implantable areas. First, we provide a brief overview of semiconducting polymers from the viewpoint of materials based on the basic concepts and functionality requirements of different devices. Then we analyze the existing applications and associated devices such as information interfaces, healthcare and medicine, and energy conversion and storage. The working principle and performance of semiconducting polymer-based fiber devices are summarized. Furthermore, we focus on the fabrication techniques of fiber devices. Based on the continuous fabrication of one-dimensional fiber and yarn, we introduce two- and three-dimensional fabric fabricating methods. Finally, we review challenges and relevant perspectives and potential solutions to address the related problems.

Functional Fiber Materials to Smart Fiber Devices

The development of fiber materials has accompanied the evolution of human civilization for centuries. Recent advances in materials science and chemistry offered fibers new applications with various functions, including energy harvesting, energy storing, displaying, health monitoring and treating, and computing. The unique one-dimensional shape of fiber devices endows them advantages to work as human-interfaced electronics due to the small size, lightweight, flexibility, and feasibility for integration into large-scale textile systems. In this review, we first present a discussion of the basics of fiber materials and the design principles of fiber devices, followed by a comprehensive analysis on recently developed fiber devices. Finally, we provide the current challenges facing this field and give an outlook on future research directions. With novel fiber devices and new applications continuing to be discovered after two decades of research, we envision that new fiber devices could have an important impact on our life in the near future.

Reconfigurable neuromorphic memristor network for ultralow-power smart textile electronics

Neuromorphic computing memristors are attractive to construct low-power- consumption electronic textiles due to the intrinsic interwoven architecture and promising applications in wearable electronics. Developing reconfigurable fiber-based memristors is an efficient method to realize electronic textiles that capable of neuromorphic computing function. However, the previously reported artificial synapse and neuron need different materials and configurations, making it difficult to realize multiple functions in a single device. Herein, a textile memristor network of Ag/MoS₂/HfAlO_x/carbon nanotube with reconfigurable characteristics was reported, which can achieve both nonvolatile synaptic plasticity and volatile neuron functions. In addition, a single reconfigurable memristor can realize integrate-and-fire function, exhibiting significant advantages in reducing the complexity of neuron circuits. The firing energy consumption of fiber-based memristive neuron is 1.9 fJ/spike (femtojoule-level), which is at least three orders of magnitude lower than that of the reported biological and artificial neuron (picojoule-level). The ultralow energy consumption makes it possible to create an electronic neural network that reduces the energy consumption compared to human brain. By integrating the reconfigurable synapse, neuron and heating resistor, a smart textile system is successfully constructed for warm fabric application, providing a unique functional reconfiguration pathway toward the next-generation in-memory computing textile system.

Flexible Transient Resistive Memory Based on Biodegradable Composites

Physical transient electronics have attracted more attention as the basis for building green electronics and biomedical devices. However, there are difficulties in selecting materials for the fabricated devices to take into account both biodegradability and high performance. In this paper, a physically transient resistive random-access memory (RRAM) device was fabricated by using egg protein and graphene quantum dot composites as active layers. The sandwich structure composed of Al/EA:GQD/ITO shows a good write-once-multiple-read memory characteristic, and the introduced GQD improves the switching current ratio of the device. By using the sensitivity of GQDs to ultraviolet light, the logic operation of the "OR gate" is completed. Furthermore, the device exhibits a physical transient behavior and good biodegradability due to the dissolution behavior in deionized water. These results suggest that the device is a favorable candidate for the construction of memory elements for transient electronic systems.

High-Performance Flexible Polymer Memristor Based on Stable Filamentary Switching

Polymer-based atomic switch memristors via the formation/dissolution of atomic-scale conductive filaments are considered as the leading candidate for next-generation nonvolatile memory. However, the instability of conductive filaments of incomplete bridge makes their switching performances unsatisfied. In this work, we report a flexible polymeric memristor using polyethylenimine incorporated with silver salt. The memristor device exhibited superior performances at room temperature with a favorable endurance, high ON/OFF ratio, good retention, and low operating voltage. These satisfactory performances are attributed to the pre-existing Ag ions in the polymer, guiding the formation of a robust Ag filament. In addition, the device shows stable bipolar switching behavior in bending conditions or after hundreds of bending cycles. In our work, we provide a simple and efficient method to construct robust filament-based memristors for flexible electronics.

A Bioinspired Artificial Injury Response System Based on a Robust Polymer Memristor to Mimic a Sense of Pain, Sign of Injury, and Healing

Flexible electronic skin with features that include sensing, processing, and responding to stimuli have transformed human-robot interactions. However, more advanced capabilities, such as human-like self-protection modalities with a sense of pain, sign of injury, and healing, are more challenging. Herein, a novel, flexible, and robust diffusive memristor based on a copolymer of chlorotrifluoroethylene and vinylidene fluoride (FK-800) as an artificial nociceptor (pain sensor) is reported. Devices composed of Ag/FK-800/Pt have outstanding switching endurance >10⁶  cycles, orders of magnitude higher than any other two-terminal polymer/organic memristors in literature (typically 10² -10³ cycles). In situ conductive atomic force microscopy is employed to dynamically switch individual filaments, which demonstrates that conductive filaments correlate with polymer grain boundaries and FK-800 has superior morphological stability under repeated switching cycles. It is hypothesized that the high thermal stability and high elasticity of FK-800 contribute to the stability under local Joule heating associated with electrical switching. To mimic biological nociceptors, four signature nociceptive characteristics are demonstrated: threshold triggering, no adaptation, relaxation, and sensitization. Lastly, by integrating a triboelectric generator (artificial mechanoreceptor), memristor (artificial nociceptor), and light emitting diode (artificial bruise), the first bioinspired injury response system capable of sensing pain, showing signs of injury, and healing, is demonstrated.

Recent progress of fiber-based transistors: materials, structures and applications

Wearable electronics on fibers or fabrics assembled with electronic functions provide a platform for sensors, displays, circuitry, and computation. These new conceptual devices are human-friendly and programmable, which makes them indispensable for modern electronics. Their unique properties such as being adaptable in daily life, as well as being lightweight and flexible, have enabled many promising applications in robotics, healthcare, and the Internet of Things (IoT). Transistors, one of the fundamental blocks in electronic systems, allow for signal processing and computing. Therefore, study leading to integration of transistors with fabrics has become intensive. Here, several aspects of fiber-based transistors are addressed, including materials, system structures, and their functional devices such as sensory, logical circuitry, memory devices as well as neuromorphic computation. Recently reported advances in development and challenges to realizing fully integrated electronic textile (e-textile) systems are also discussed.

Advanced Multifunctional Aqueous Rechargeable Batteries Design: From Materials and Devices to Systems

Multifunctional aqueous rechargeable batteries (MARBs) are regarded as safe, cost-effective, and scalable electrochemical energy storage devices, which offer additional functionalities that conventional batteries cannot achieve, which ideally leads to unprecedented applications. Although MARBs are among the most exciting and rapidly growing topics in scientific research and industrial development nowadays, a systematic summary of the evolution and advances in the field of MARBs is still not available. Therefore, the review presented comprehensively and systematically summarizes the design principles and the recent advances of MARBs by categories of smart ARBs and integrated systems, together with an analysis of their device design and configuration, electrochemical performance, and diverse smart functions. The two most promising strategies to construct novel MARBs may be A) the introduction of functional materials into ARB components, and B) integration of ARBs with other functional devices. The ongoing challenges and future perspectives in this research and development field are outlined to foster the future development of MARBs. Finally, the most important upcoming research directions in this rapidly developing field are highlighted that may be most promising to lead to the commercialization of MARBs and to a further broadening of their range of applications.

Electronic Textiles for Wearable Point-of-Care Systems

Traditional public health systems are suffering from limited, delayed, and inefficient medical services, especially when confronted with the pandemic and the aging population. Fusing traditional textiles with diagnostic, therapeutic, and protective medical devices can unlock electronic textiles (e-textiles) as point-of-care platform technologies on the human body, continuously monitoring vital signs and implementing round-the-clock treatment protocols in close proximity to the patient. This review comprehensively summarizes the research advances on e-textiles for wearable point-of-care systems. We start with a brief introduction to emphasize the significance of e-textiles in the current healthcare system. Then, we describe textile sensors for diagnosis, textile therapeutic devices for medical treatment, and textile protective devices for prevention, by highlighting their working mechanisms, representative materials, and clinical application scenarios. Afterward, we detail e-textiles' connection technologies as the gateway for real-time data transmission and processing in the context of 5G technologies and Internet of Things. Finally, we provide new insights into the remaining challenges and future directions in the field of e-textiles. Fueled by advances in chemistry and materials science, textile-based diagnostic devices, therapeutic devices, protective medical devices, and communication units are expected to interact synergistically to construct intelligent, wearable point-of-care textile platforms, ultimately illuminating the future of healthcare system in the Internet of Things era.

Bio-memristors based on silk fibroin

Bio-memristors constitute candidates for the next generation of non-volatile storage and bionic synapses due to their biocompatibility, environmental benignity, sustainability, flexibility, degradability, and impressive memristive performance. Silk fibroin (SF), a natural and abundant biomaterial with excellent mechanical, optical, electrical, and structure-adjustable properties as well as being easy to process, has been utilized and shown to have potential in the construction of bio-memristors. Here, we first summarize the fundamental mechanisms of bio-memristors based on SF. Then, the latest achievements and developments of pristine and composited SF-based memristors are highlighted, followed by the integration of memristive devices. Finally, the challenges and insights associated with SF-based bio-memristors are presented. Advances in SF-based bio-memristors will open new avenues in the design and integration of high-performance bio-integrated systems and facilitate their application in logic operations, complex circuits, and neural networks.

Discovering giant magnetoelasticity in soft matter for electronic textiles

We discovered a giant magnetoelasticity in soft matter with up to 5-fold enhancement of magnetomechanical coupling factors compared to that of rigid metal alloys without an externally applied magnetic field. A wavy chain analytical model based on the magnetic dipole-dipole interaction and demagnetizing field was established, fitting well to the experimental observation. To explore its potentials in electronic textiles, we coupled it with magnetic induction to invent a textile magnetoelastic generator (MEG), a new working mechanism for biomechanical energy conversion, featuring an intrinsic waterproofness, an ultralow internal impedance of approximately 20 Ω, and a high short-circuit current density of 1.37 mA/cm², which is about four orders of magnitude higher than that of other textile generator counterparts. Meanwhile, assisted by machine learning, the textile MEG could continuously monitor the respiratory activities on heavily perspiring skin without any encapsulation, allowing a timely diagnosis of the respiration abnormalities in a self-powered manner. We foresee that this discovery can be extended to wide-range soft-matter systems, emerging as a compelling approach to develop electronic textiles for energy, sensing, and therapeutic applications.

Recent Advances in Fiber-Shaped Electronic Devices for Wearable Applications

Fiber electronics is a key research area for realizing wearable microelectronic devices. Significant progress has been made in recent years in developing the geometry and composition of electronic fibers. In this review, we present that recent progress in the architecture and electrical properties of electronic fibers, including their fabrication methods. We intensively investigate the structural designs of fiber-shaped devices: coaxial, twisted, three-dimensional layer-by-layer, and woven structures. In addition, we introduce remarkable applications of fiber-shaped devices for energy harvesting/storage, sensing, and light-emitting devices. Electronic fibers offer high potential for use in next-generation electronics, such as electronic textiles and smart integrated textile systems, which require excellent deformability and high operational reliability.

Flexible boron nitride-based memristor for in situ digital and analogue neuromorphic computing applications

The data processing efficiency of traditional computers is suffering from the intrinsic limitation of physically separated processing and memory units. Logic-in-memory and brain-inspired neuromorphic computing are promising in-memory computing paradigms for improving the computing efficiency and avoiding high power consumption caused by extra data movement. However, memristors that can conduct digital memcomputing and neuromorphic computing simultaneously are limited by the difference in the information form between digital data and analogue data. In order to solve this problem, this paper proposes a flexible low-dimensional memristor based on boron nitride (BN), which has ultralow-power non-volatile memory characteristic, reliable digital memcomputing capabilities, and integrated ultrafast neuromorphic computing capabilities in a single in situ computing system. The logic-in-memory basis, including FALSE, material implication (IMP), and NAND, are implemented successfully. The power consumption of the proposed memristor per synaptic event (198 fJ) can be as low as biology (fJ level) and the response time (1 μs) of the neuromorphic computing is four orders of magnitude shorter than that of the human brain (10 ms), paving the way for wearable ultrahigh efficient next-generation in-memory computing architectures.

A Monochloro Copper Phthalocyanine Memristor with High-Temperature Resilience for Electronic Synapse Applications

Memristors are considered to be one of the most promising device concepts for neuromorphic computing, in particular thanks to their highly tunable resistive states. To realize neuromorphic computing architectures, the assembly of large memristive crossbar arrays is necessary, but is often accompanied by severe heat dispassion. Organic materials can be tailored with on-demand electronic properties in the context of neuromorphic applications. However, such materials are more susceptible to heat, and detrimental effects such as thermally induced degradation directly lead to failure of device operation. Here, an organic memristive synapse formed of monochloro copper phthalocyanine, which remains operational and capable of memristive switching at temperatures as high as 300 °C in ambient air without any encapsulation, is demonstrated. The change in the electrical conductance is found to be a result of ion movement, closely resembling what takes place in biological neurons. Furthermore, the high viability of this approach is showcased by demonstrating flexible memristors with stable switching behaviors after repeated mechanical bending as well as organic synapses capable of emulating a trainable and reconfigurable memristor array for image information processing. The results set a precedent for thermally resilient organic synapses to impact organic neuromorphic devices in progressing their practicality.