1
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Guli M, Li R, Bai L, Lan C, He W, Zhou Y. Effect of ABX 3 site changes on the performance of tin-lead mixed perovskite solar cells. NANOSCALE 2024; 16:17276-17299. [PMID: 39240060 DOI: 10.1039/d4nr00678j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/07/2024]
Abstract
Tin-lead mixed perovskite solar cells (TLMPSCs), with the advantage of approaching the Shockley-Queisser (S-Q) limit for photovoltaic applications, have been rapidly developed and achieved a power conversion efficiency (PCE) of 23.7%. Although the low toxicity of TLMPSCs is conducive to sustainable development, the oxidation of Sn2+ could destroy the perovskite structure easily. Thus, most researchers are devoted to improving the photoelectric performance and stability through additive engineering, interface engineering, device structure optimization, solvent engineering, etc. However, TLMPs with different A-sites and X-sites in the ABX3 model and an optimal ratio of Sn : Pb still need to be investigated; this is the basis of mechanistic analysis. In this paper, we introduce TLMPSCs with different A-sites, X-sites, and Sn-Pb ratios. The mechanism and properties of the cations are analyzed based on the performance of TLMPSCs. Finally, a series of prospects for optimizing ABX3 are put forward, with the hope of attracting the attention and interest of researchers.
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Affiliation(s)
- Mina Guli
- Beijing Key Laboratory of Novel Thin Film Solar Cells, School of New Energy, North China Electric Power University, Beijing 102206, People's Republic of China.
| | - Ran Li
- Beijing Key Laboratory of Novel Thin Film Solar Cells, School of New Energy, North China Electric Power University, Beijing 102206, People's Republic of China.
| | - Luyun Bai
- Beijing Key Laboratory of Novel Thin Film Solar Cells, School of New Energy, North China Electric Power University, Beijing 102206, People's Republic of China.
- Qinghai Communications Technical College, Xining 810003, People's Republic of China
| | - Cheng Lan
- Beijing Key Laboratory of Novel Thin Film Solar Cells, School of New Energy, North China Electric Power University, Beijing 102206, People's Republic of China.
| | - Wenkai He
- Beijing Key Laboratory of Novel Thin Film Solar Cells, School of New Energy, North China Electric Power University, Beijing 102206, People's Republic of China.
| | - Yancheng Zhou
- Beijing Key Laboratory of Novel Thin Film Solar Cells, School of New Energy, North China Electric Power University, Beijing 102206, People's Republic of China.
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2
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Wong EL, Folpini G, Zhou Y, Albaqami MD, Petrozza A. Electron Spectroscopy and Microscopy: A Window into the Surface Electronic Properties of Polycrystalline Metal Halide Perovskites. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310240. [PMID: 38708696 DOI: 10.1002/adma.202310240] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2023] [Revised: 03/04/2024] [Indexed: 05/07/2024]
Abstract
In the past years, an increasing number of experimental techniques have emerged to address the need to unveil the chemical, structural, and electronic properties of perovskite thin films with high vertical and lateral spatial resolutions. One of these is angle-resolved photoemission electron spectroscopy which can provide direct access to the electronic band structure of perovskites, with the aim of overcoming elusive and controversial information due to the complex data interpretation of purely optical spectroscopic techniques. This perspective looks at the information that can be gleaned from the direct measurement of the electronic band structure of single crystal perovskites and the challenges that remain to be overcame to extend this technique to heterogeneous polycrystalline metal halide perovskites.
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Affiliation(s)
- E Laine Wong
- Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Via Raffaele Rubattino, 81, Milano, 20134, Italy
| | - Giulia Folpini
- Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Via Raffaele Rubattino, 81, Milano, 20134, Italy
| | - Yang Zhou
- Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Via Raffaele Rubattino, 81, Milano, 20134, Italy
| | - Minirah Dukhi Albaqami
- Chemistry Department, College of Science, King Saud University, Riyadh, 11451, Saudi Arabia
| | - Annamaria Petrozza
- Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Via Raffaele Rubattino, 81, Milano, 20134, Italy
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3
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Wang J, Huang J, Abdel-Shakour M, Liu T, Wang X, Pan Y, Wang L, Cui E, Hu JS, Yang S, Meng X. Colloidal Zeta Potential Modulation as a Handle to Control the Crystallization Kinetics of Tin Halide Perovskites for Photovoltaic Applications. Angew Chem Int Ed Engl 2024; 63:e202317794. [PMID: 38424035 DOI: 10.1002/anie.202317794] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/21/2023] [Revised: 02/13/2024] [Accepted: 02/29/2024] [Indexed: 03/02/2024]
Abstract
Tin halide perovskites (THPs) have demonstrated exceptional potential for various applications owing to their low toxicity and excellent optoelectronic properties. However, the crystallization kinetics of THPs are less controllable than its lead counterpart because of the higher Lewis acidity of Sn2+, leading to THP films with poor morphology and rampant defects. Here, a colloidal zeta potential modulation approach is developed to improve the crystallization kinetics of THP films inspired by the classical Derjaguin-Landau-Verwey-Overbeek (DLVO) theory. After adding 3-aminopyrrolidine dihydro iodate (APDI2) in the precursor solution to change the zeta potential of the pristine colloids, the total interaction potential energy between colloidal particles with APDI2 could be controllably reduced, resulting in a higher coagulation probability and a lower critical nuclei concentration. In situ laser light scattering measurements confirmed the increased nucleation rate of the THP colloids with APDI2. The resulting film with APDI2 shows a pinhole-free morphology with fewer defects, achieving an impressive efficiency of 15.13 %.
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Affiliation(s)
- Junfang Wang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junjie Huang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Muhammad Abdel-Shakour
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Chemistry Department, Faculty of Science, Assiut University, Assiut, 71516, Egypt
| | - Tianhua Liu
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xu Wang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yongle Pan
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lixia Wang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Enhao Cui
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jin-Song Hu
- Beijing National Laboratory for Molecular Sciences. CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Shihe Yang
- Guangdong Key Lab of Nano-Micro Material Research, School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Xiangyue Meng
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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4
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Joy S, Hossain T, Tichy A, Johnson S, Graham KR. Defect Modulation via SnX 2 Additives in FASnI 3 Perovskite Solar Cells. J Phys Chem Lett 2024; 15:3851-3858. [PMID: 38557111 DOI: 10.1021/acs.jpclett.4c00505] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Tin halide perovskites suffer from high defect densities compared with their lead counterparts. To decrease defect densities, SnF2 is commonly used as an additive in tin halide perovskites. Herein, we investigate how SnF2 compares to other SnX2 additives (X = F, Cl, Br) in terms of electronic and ionic defect properties in FASnI3. We find that FASnI3 films with SnF2 show the lowest Urbach energies (EU) of 19 meV and a decreased p-type character, as probed with ultraviolet photoemission spectroscopy. The activation energy of ion migration, as probed with thermal admittance spectroscopy, for FASnI3 with SnF2 is 1.33 eV, which is higher than with SnCl2 and SnBr2, which are 1.22 and 0.79 eV, respectively, resulting in less ion migration. Because of improved defect passivation, the champion power conversion efficiency of FASnI3 with SnF2 is 7.47% and only 1.84% and 1.20% with SnCl2 and SnBr2, respectively.
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Affiliation(s)
- Syed Joy
- Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506, United States
| | - Tareq Hossain
- Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506, United States
| | - Adam Tichy
- Department of Physics, Transylvania University, Lexington, Kentucky 40508, United States
| | - Stephen Johnson
- Department of Physics, Transylvania University, Lexington, Kentucky 40508, United States
| | - Kenneth R Graham
- Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506, United States
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5
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Yang W, Zhang K, Yuan W, Zhang L, Qin C, Wang H. Enhancing Stability and Performance in Tin-Based Perovskite Field-Effect Transistors Through Hydrogen Bond Suppression of Organic Cation Migration. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2313461. [PMID: 38532710 DOI: 10.1002/adma.202313461] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2023] [Revised: 03/06/2024] [Indexed: 03/28/2024]
Abstract
Ion migration poses a substantial challenge in perovskite transistors, exerting detrimental effects on hysteresis and operational stability. This study focuses on elucidating the influence of ion migration on the performance of tin-based perovskite field-effect transistors (FETs). It is revealed that the high background carrier density in FASnI3 FETs arises not only from the oxidation of Sn2+ but also from the migration of FA+ ions. The formation of hydrogen bonding between FA+ and F- ions efficiently inhibits ion migration, leading to a reduction in background carrier density and an improvement in the operational stability of the transistors. The strategy of hydrogen bond is extended to fluorine-substituted additives to improve device performance. The incorporation of 4-fluorophenethylammonium iodide additives into FETs significantly minimizes the shift of turn-on voltage during cyclic measurements. Notably, an effective mobility of up to 30 cm2 V-1 s-1 with an Ion/off ratio of 107 is achieved. These findings hold promising potential for advancing tin-based perovskite technology in the field of electronics.
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Affiliation(s)
- Wenshu Yang
- Key Laboratory of Automobile Materials of Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Kai Zhang
- Key Laboratory of Automobile Materials of Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Wei Yuan
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, China
| | - Lijun Zhang
- Key Laboratory of Automobile Materials of Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Chuanjiang Qin
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, China
| | - Haibo Wang
- Key Laboratory of Automobile Materials of Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China
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6
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Li F, Wang H, Chen Z, Liu X, Wang P, Zhang W, Dong H, Fu J, Wang Z, Shao Y. Aging CsPbBr 3 Nanocrystal Wafer for Ultralow Ionic Migration and Environmental Stability for Direct X-ray Detection. ACS APPLIED MATERIALS & INTERFACES 2024; 16:10344-10351. [PMID: 38350064 DOI: 10.1021/acsami.3c16870] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/15/2024]
Abstract
The outstanding photoelectric properties of perovskites demonstrate extreme promise for application in X-ray detection. However, the soft lattice of the perovskite results in severe ionic migration for three-dimensional materials, limiting the operation stability of perovskite X-ray detectors. Although ligand-decorated nanocrystals (NCs) exhibit significantly higher stability than three-dimensional perovskites, defects remaining on the interface of NCs could still trigger halide migration under a high bias due to the incomplete ligand decoration. Furthermore, it is still challenging to realize sufficient thickness of absorption layers based on NCs for X-ray detectors through traditional methods. Herein, we develop a centimeter-size and millimeter-thick wafer based on CsPbBr3 NCs through isostatic pressing for X-ray detectors, in which the interfacial defects of NCs are remedied by CsPb2Br5 during aging of wafer in ambient humidity. The wafer shows outstanding sensitivity (200 μC Gyair-1 cm-2) and ultralow dark current drift (1.78 × 10-8 nA cm-1 s-1 V-1 @ 400 V cm-1). Moreover, it shows storage stability with negligible performance degradation for 60 days in ambient humidity. Thus, aging perovskite NC wafers for X-ray detection holds huge potential for next-generation X-ray imaging plates.
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Affiliation(s)
- Fenghua Li
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
| | - Hu Wang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
| | - Zhilong Chen
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Key Laboratory for Ultrafine Materials of Ministry of Education, Shanghai Engineering Research Center of Hierarchical Nanomaterials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China
| | - Xin Liu
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
| | - Pengxiang Wang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
| | - Wenqing Zhang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
| | - Hao Dong
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- School of Microelectronics, Shanghai University, Shanghai 201899, China
| | - Jie Fu
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- School of Microelectronics, Shanghai University, Shanghai 201899, China
| | - Zhiyuan Wang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
| | - Yuchuan Shao
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
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7
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Mi J, Li Q, Li B, Wang W, Wang S, Zheng F, Guo G. Efficient Direct X-ray Detection and Imaging Based on a Lead-Free Electron Donor-Acceptor MOF. ACS APPLIED MATERIALS & INTERFACES 2024; 16:9002-9011. [PMID: 38344979 DOI: 10.1021/acsami.3c16712] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/23/2024]
Abstract
Metal-organic frameworks (MOFs) have recently gained extensive attention as potential materials for direct radiation detection due to their strong radiation absorption, long-range order, and chemical tunability. However, it remains challenging to develop a practical MOF-based X-ray direct detector that possesses high X-ray detection efficiency, radiation stability, and environmental friendliness. The integration of donor-acceptor (D-A) pairs into crystalline MOFs is a powerful strategy for the precise fabrication of multifunctional materials with unique optoelectronic properties. Herein, a new lead-free MOF, Cu2I2(TPPA) (CuI-TPPA, TPPA = tris[4-(pyridine-4-yl)phenyl]amine), with a 6-fold interpenetrated structure is designed and synthesized based on the electron donor-acceptor strategy. CuI-TPPA has a large mobility-lifetime (μτ) product of 5.8 × 10-4 cm2 V-1 and a high detection sensitivity of 73.1 μC Gyair-1 cm-2, surpassing that of commercial α-Se detectors. Moreover, the detector remains fairly stable with only a 2% reduction in photocurrent under continuous bias irradiation conditions with a total dose of over 42.83 Gyair. The CuI-TPPA/poly(vinylidene fluoride) flexible composite X-ray detector films are successfully manufactured with different thicknesses. Through multifaceted assessments, the optimal thickness is found with a high detection sensitivity of up to 143.6 μC Gyair-1 cm-2. As proof-of-concept, 11 × 9 pixelated X-ray detectors are fabricated on the same composite film to realize X-ray direct imaging. This work opens up potential applications of MOFs in environmentally friendly and wearable devices for direct X-ray detection and imaging.
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Affiliation(s)
- Jiarong Mi
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Qianwen Li
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Baoyi Li
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Wenfei Wang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Shuaihua Wang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, China
| | - Fakun Zheng
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, China
- Fujian College, University of Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Guocong Guo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, China
- Fujian College, University of Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
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8
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Dey K, Ghosh D, Pilot M, Pering SR, Roose B, Deswal P, Senanayak SP, Cameron PJ, Islam MS, Stranks SD. Substitution of lead with tin suppresses ionic transport in halide perovskite optoelectronics. ENERGY & ENVIRONMENTAL SCIENCE 2024; 17:760-769. [PMID: 38269299 PMCID: PMC10805128 DOI: 10.1039/d3ee03772j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/04/2023] [Accepted: 11/23/2023] [Indexed: 01/26/2024]
Abstract
Despite the rapid rise in the performance of a variety of perovskite optoelectronic devices with vertical charge transport, the effects of ion migration remain a common and longstanding Achilles' heel limiting the long-term operational stability of lead halide perovskite devices. However, there is still limited understanding of the impact of tin (Sn) substitution on the ion dynamics of lead (Pb) halide perovskites. Here, we employ scan-rate-dependent current-voltage measurements on Pb and mixed Pb-Sn perovskite solar cells to show that short circuit current losses at lower scan rates, which can be traced to the presence of mobile ions, are present in both kinds of perovskites. To understand the kinetics of ion migration, we carry out scan-rate-dependent hysteresis analyses and temperature-dependent impedance spectroscopy measurements, which demonstrate suppressed ion migration in Pb-Sn devices compared to their Pb-only analogues. By linking these experimental observations to first-principles calculations on mixed Pb-Sn perovskites, we reveal the key role played by Sn vacancies in increasing the iodide ion migration barrier due to local structural distortions. These results highlight the beneficial effect of Sn substitution in mitigating undesirable ion migration in halide perovskites, with potential implications for future device development.
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Affiliation(s)
- Krishanu Dey
- Cavendish Laboratory, University of Cambridge Cambridge UK
| | - Dibyajyoti Ghosh
- Department of Materials Science and Engineering and Department of Chemistry, Indian Institute of Technology Delhi Hauz Khas India
| | | | - Samuel R Pering
- Department of Materials, Loughborough University Loughborough UK
| | - Bart Roose
- Department of Chemical Engineering and Biotechnology, University of Cambridge Cambridge UK
| | - Priyanka Deswal
- Department of Physics, Indian Institute of Technology Delhi Hauz Khas India
| | - Satyaprasad P Senanayak
- Nanoelectronics and Device Physics Lab,School of Physical Sciences, National Institute of Science Education and Research, HBNI, Jatni India
| | | | | | - Samuel D Stranks
- Cavendish Laboratory, University of Cambridge Cambridge UK
- Department of Chemical Engineering and Biotechnology, University of Cambridge Cambridge UK
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9
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Yang S, Wen J, Wu Y, Zhu H, Liu A, Hu Y, Noh YY, Chu J, Li W. Unlocking the Potential of Tin-Based Perovskites: Properties, Progress, and Applications in New-Era Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2304626. [PMID: 37641178 DOI: 10.1002/smll.202304626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2023] [Revised: 08/10/2023] [Indexed: 08/31/2023]
Abstract
Electronics have greatly promoted the development of modern society and the exploration of new semiconducting materials with low cost and high mobility continues to attract interest in the advance of next-generation electronic devices. Among emerging semiconductors, the metal-halide perovskite, especially the nontoxic tin (Sn)-based candidates, has recently made breakthroughs in the field of diverse electronic devices due to its excellent charge transport properties and cost-effective large-area deposition capability at low temperatures. To enable a more comprehensive understanding of this emerging research field and promote the development of new-generation perovskite electronics, this review aims to provide an in-depth understanding with the discussion of unique physical properties of Sn-based perovskites and the summarization of recent research progress of Sn-based perovskite field-effect transistors (FETs) and diverse electronic devices. The unique character of negligible ion migration is also discussed, which is fundamentally different from the lead-based counterparts and provides a great prerequisite for device application. The following section highlights the potential broad applications of Sn-perovskite FETs as a competitive and feasible technology. Finally, an outlook and remaining challenges are given to advance the progression of Sn-based perovskite FETs, especially on the origin and solution of stability problems toward high-performance Sn-based perovskite electronics.
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Affiliation(s)
- Shuzhang Yang
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Jincheng Wen
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Yanqiu Wu
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Huihui Zhu
- Department of Chemistry, Northwestern University, Evanston, Illinois, 60208, USA
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Ao Liu
- Department of Chemistry, Northwestern University, Evanston, Illinois, 60208, USA
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Yuanyuan Hu
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Yong-Young Noh
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Junhao Chu
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
- Key Laboratory of Polar Materials and Devices (Ministry of Education), East China Normal University, Shanghai, 200241, China
| | - Wenwu Li
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
- Key Laboratory of Polar Materials and Devices (Ministry of Education), East China Normal University, Shanghai, 200241, China
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10
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Zhan W, Liu M, Wan Q, He M, Zhang Q, Liao X, Yuan C, Kong L, Wang Y, Sun B, Brovelli S, Li L. Fluorine Passivation Inhibits "Particle Talking" Behaviors under Thermal and Electrical Conditions of Pure Blue Mixed Halide Perovskite Nanocrystals. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2304829. [PMID: 37403273 DOI: 10.1002/smll.202304829] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/18/2023] [Indexed: 07/06/2023]
Abstract
Owing to outstanding optoelectronic properties, lead halide perovskite nanocrystals (PNCs) are considered promising emitters for next-generation displays. However, the development of pure blue (460-470 nm) perovskite nanocrystal light-emitting diodes (PNC-LEDs), which correspond to the requirements of Rec. 2020 standard, lag far behind that of their green and red counterparts. Here, pure blue CsPb(Br/Cl)3 nanocrystals with remarkable optical performance are demonstrated by a facile fluorine passivation strategy. Prominently, the fluorine passivation on halide vacancies and strong bonding of Pb-F intensely enhance crystal structure stability and inhibit "particle talking" behaviors under both thermal and electrical conditions. Fluorine-based PNCs with high resistance of luminescence thermal quenching retain 70% of photoluminescent intensity when heated to 343 K, which can be attributed to the elevated activation energy for carrier trapping and unchanged grain size. Fluorine-based PNC-LEDs also exhibit stable pure blue electroluminescence (EL) emission with sevenfold promoted luminance and external quantum efficiencies (EQEs), where the suppression of ion migration is further evidenced by a lateral structure device with applied polarizing potential.
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Affiliation(s)
- Wenji Zhan
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai, 200240, P. R. China
| | - Mingming Liu
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai, 200240, P. R. China
| | - Qun Wan
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai, 200240, P. R. China
| | - Mengda He
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai, 200240, P. R. China
| | - Qinggang Zhang
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai, 200240, P. R. China
| | - Xinrong Liao
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai, 200240, P. R. China
| | - Changwei Yuan
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai, 200240, P. R. China
| | - Long Kong
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai, 200240, P. R. China
| | - Yusheng Wang
- Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, P. R. China
| | - Baoquan Sun
- Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, P. R. China
| | - Sergio Brovelli
- Università degli Studi di Milano-Bicocca, Dipartimento di Scienza dei Materiali, Via Cozzi 55, Milan, 20125, Italy
| | - Liang Li
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai, 200240, P. R. China
- Macao Institute of Materials Science and Engineering (MIMSE), Macau University of Science and Technology, Taipa, Macao, 999078, P. R. China
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11
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Zhou Z, Li Q, Chen M, Zheng X, Wu X, Lu X, Tao S, Zhao N. High-Mobility and Bias-Stable Field-Effect Transistors Based on Lead-Free Formamidinium Tin Iodide Perovskites. ACS ENERGY LETTERS 2023; 8:4496-4505. [PMID: 37854050 PMCID: PMC10580314 DOI: 10.1021/acsenergylett.3c01400] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Accepted: 09/26/2023] [Indexed: 10/20/2023]
Abstract
Electronic devices based on tin halide perovskites often exhibit a poor operational stability. Here, we report an additive engineering strategy to realize high-performance and stable field-effect transistors (FETs) based on 3D formamidinium tin iodide (FASnI3) films. By comparatively studying the modification effects of two additives, i.e., phenethylammonium iodide and 4-fluorophenylethylammonium iodide via combined experimental and theoretical investigations, we unambiguously point out the general effects of phenethylammonium (PEA) and its fluorinated derivative (FPEA) in enhancing crystallization of FASnI3 films and the unique role of fluorination in reducing structural defects, suppressing oxidation of Sn2+ and blocking oxygen and water involved defect reactions. The optimized FPEA-modified FASnI3 FETs reach a record high field-effect mobility of 15.1 cm2/(V·s) while showing negligible hysteresis. The devices exhibit less than 10% and 3% current variation during over 2 h continuous bias stressing and 4200-cycle switching test, respectively, representing the best stability achieved so far for all Sn-based FETs.
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Affiliation(s)
- Zhiwen Zhou
- Department
of Electronic Engineering, The Chinese University
of Hong Kong, Shatin 999077, Hong Kong SAR, China
| | - Qihua Li
- Materials
Simulation & Modelling, Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Mojun Chen
- Smart
Manufacturing Thrust, Systems Hub, The Hong
Kong University of Science and Technology, Guangzhou 511458, China
| | - Xuerong Zheng
- Department
of Electronic Engineering, The Chinese University
of Hong Kong, Shatin 999077, Hong Kong SAR, China
| | - Xiao Wu
- Department
of Physics, The Chinese University of Hong
Kong, Shatin 999077, Hong Kong SAR, China
| | - Xinhui Lu
- Department
of Physics, The Chinese University of Hong
Kong, Shatin 999077, Hong Kong SAR, China
| | - Shuxia Tao
- Materials
Simulation & Modelling, Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Ni Zhao
- Department
of Electronic Engineering, The Chinese University
of Hong Kong, Shatin 999077, Hong Kong SAR, China
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12
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Wang Q, Qiu P, Luo X, Zheng C, Wang S, Ren X, Gao J, Lu X, Gao X, Shui L, Wu S, Liu JM. Mutually Tuned Dual Additive Engineering Synergistically Enhances the Photovoltaic Performance of Tin-Based Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2023; 15:45064-45075. [PMID: 37710994 DOI: 10.1021/acsami.3c11009] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/16/2023]
Abstract
Tin-based perovskite solar cells (T-PSCs) have become the star photovoltaic products in recent years due to their low environmental toxicity and superior photovoltaic performance. However, the easy oxidation of Sn2+ and the energy level mismatch between the perovskite film and charge transport layer limit its efficiency. In order to regulate the microstructure and photoelectric properties of tin-based perovskite films to enhance the efficiency and stability of T-PSCs, guanidinium bromide (GABr) and organic Lewis-based additive methylamine cyanate (MAOCN) are introduced into the FA0.9PEA0.1SnI3-based perovskite precursor. A series of characterizations show that the interactions between additive molecules and perovskite mutually reconcile to improve the photovoltaic performance of T-PSCs. The introduction of GABr can adjust the band gap of the perovskite film and energy level alignment of T-PSCs. They significantly increase the open-circuit voltage (Voc). The MAOCN material can form hydrogen bonds with SnI2 in the precursor, which can inhibit the oxidation of Sn2+ and significantly improve the short-circuit current density (Jsc). The synergistic modulation of the dual additives reduces the trap-state density and improves photovoltaic performance, resulting in an increased champion efficiency of 9.34 for 5.22% of the control PSCs. The unencapsulated T-PSCs with GABr and MAOCN dual additives prepared in the optimized process can retain more than 110% of their initial efficiency after aging for 1750 h in a nitrogen glovebox, but the control PSCs maintain only 50% of their initial efficiency kept in the same conditions. This work provides a new perspective to further improve the efficiency and stability of T-PSCs.
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Affiliation(s)
| | | | | | | | | | | | | | | | | | | | | | - Jun-Ming Liu
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
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13
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Hu S, Smith JA, Snaith HJ, Wakamiya A. Prospects for Tin-Containing Halide Perovskite Photovoltaics. PRECISION CHEMISTRY 2023; 1:69-82. [PMID: 37124243 PMCID: PMC10131267 DOI: 10.1021/prechem.3c00018] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/08/2023] [Revised: 03/14/2023] [Accepted: 04/03/2023] [Indexed: 05/02/2023]
Abstract
Tin-containing metal halide perovskites have enormous potential as photovoltaics, both in narrow band gap mixed tin-lead materials for all-perovskite tandems and for lead-free perovskites. The introduction of Sn(II), however, has significant effects on the solution chemistry, crystallization, defect states, and other material properties in halide perovskites. In this perspective, we summarize the main hurdles for tin-containing perovskites and highlight successful attempts made by the community to overcome them. We discuss important research directions for the development of these materials and propose some approaches to achieve a unified understanding of Sn incorporation. We particularly focus on the discussion of charge carrier dynamics and nonradiative losses at the interfaces between perovskite and charge extraction layers in p-i-n cells. We hope these insights will aid the community to accelerate the development of high-performance, stable single-junction tin-containing perovskite solar cells and all-perovskite tandems.
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Affiliation(s)
- Shuaifeng Hu
- Institute
for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
| | - Joel A. Smith
- Clarendon
Laboratory, Department of Physics, University
of Oxford, Oxford OX1 3PU, U.K.
| | - Henry J. Snaith
- Clarendon
Laboratory, Department of Physics, University
of Oxford, Oxford OX1 3PU, U.K.
| | - Atsushi Wakamiya
- Institute
for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
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14
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Hu Y, Cao S, Qiu P, Yu M, Wei H. All-Inorganic Perovskite Quantum Dot-Based Blue Light-Emitting Diodes: Recent Advances and Strategies. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4372. [PMID: 36558224 PMCID: PMC9781770 DOI: 10.3390/nano12244372] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/15/2022] [Revised: 12/02/2022] [Accepted: 12/06/2022] [Indexed: 06/17/2023]
Abstract
Light-emitting diodes (LEDs) based on all-inorganic lead halide perovskite quantum dots (PQDs) have undergone rapid development especially in the past five years, and external quantum efficiencies (EQEs) of the corresponding green- and red-emitting devices have exceeded 23%. However, the blue-emitting devices are facing greater challenges than their counterparts, and their poor luminous efficiency has hindered the display application of PQD-based LEDs (PeQLEDs). This review focuses on the key challenges of blue-emitting PeQLEDs including low EQEs, short operating lifetime, and spectral instability, and discusses the essential mechanism by referring to the latest research. We then systematically summarize the development of preparation methods of blue emission PQDs, as well as the current strategies on alleviating the poor device performance involved in composition engineering, ligand engineering, surface/interface engineering, and device structural engineering. Ultimately, suggestions and outlooks are proposed around the major challenges and future research direction of blue PeQLEDs.
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Affiliation(s)
- Yuyu Hu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto–Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Shijie Cao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto–Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Peng Qiu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto–Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Meina Yu
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Huiyun Wei
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto–Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
- Engineering Research Center of Clinical Functional Materials and Diagnosis & Treatment Devices of Zhejiang Province, Wenzhou Institute, Wenzhou Institute of Biomaterials & Engineering, University of Chinese Academy of Sciences, Wenzhou 325027, China
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