Structures of Uncharacterised Polymorphs of Gallium Oxide from Total Neutron Diffraction

2D Embedded Ultrawide Bandgap Devices for Extreme Environment Applications

Ultrawide bandgap semiconductors such as AlGaN, AlN, diamond, and β-Ga2O3 have significantly enhanced the functionality of electronic and optoelectronic devices, particularly in harsh environment conditions. However, some of these materials face challenges such as low thermal conductivity, limited P-type conductivity, and scalability issues, which can hinder device performance under extreme conditions like high temperature and irradiation. In this review paper, we explore the integration of various two-dimensional materials (2DMs) to address these challenges. These materials offer excellent properties such as high thermal conductivity, mechanical strength, and electrical properties. Notably, graphene, hexagonal boron nitride, transition metal dichalcogenides, 2D and quasi-2D Ga2O3, TeO2, and others are investigated for their potential in improving ultrawide bandgap semiconductor-based devices. We highlight the significant improvement observed in the device performance after the incorporation of 2D materials. By leveraging the properties of these materials, ultrawide bandgap semiconductor devices demonstrate enhanced functionality and resilience in harsh environmental conditions. This review provides valuable insights into the role of 2D materials in advancing the field of ultrawide bandgap semiconductors and highlights opportunities for further research and development in this area.

Analysis of dislocation defects in compositionally step-graded α-(Al x Ga1-x )2O3 layers

The ultra-wide bandgap semiconductor α-Ga2O3 can be heteroepitaxially grown on a sapphire substrate. However, due to a lattice mismatch of about 4.6% with a sapphire substrate, many dislocation defects occur in α-Ga2O3 films. To reduce the dislocation density, compositionally step-graded α-(Al x Ga1-x )2O3 layers were fabricated on a c-plane sapphire substrate using mist CVD. TEM measurements revealed few dislocations in the initial layer of α-(Al0.96Ga0.04)2O3, but numerous dislocations were observed in the subsequent layer of α-(Al0.84Ga0.16)2O3. However, the step-graded α-(Al x Ga1-x )2O3 layers exhibited bending of the dislocations under both compressive and tensile strains due to compositional differences of α-(Al x Ga1-x )2O3, resulting in about 50% reduction of the dislocation density in the high-Ga-composition layer of α-(Al x Ga1-x )2O3. The introduction of multiple 50 nm α-Ga2O3 layers into the compositionally step-graded α-(Al x Ga1-x )2O3 layers resulted in a notable reduction in dislocation defects at the interface between the sandwiched α-Ga2O3 layers. It is assumed that the dislocations were bent by the strain caused by the composition change, resulting in a decrease in the number of dislocations. It is anticipated that further reduction of dislocation density will be achieved by optimizing the composition change and thicknesses of layers that provide effective strain for dislocation bending, and by stacking these layers.

An Aerosol-Assisted Chemical Vapor Deposition Route to Tin-Doped Gallium Oxide Thin Films with Optoelectronic Properties

Gallium oxide is a wide-bandgap compound semiconductor material renowned for its diverse applications spanning gas sensors, liquid crystal displays, transparent electrodes, and ultraviolet detectors. This paper details the aerosol assisted chemical vapor deposition synthesis of tin doped gallium oxide thin films using gallium acetylacetonate and monobutyltin trichloride dissolved in methanol. It was observed that Sn doping resulted in a reduction in the transmittance of Ga2O3 films within the visible spectrum, while preserving the wide bandgap characteristics of 4.8 eV. Furthermore, Hall effect testing revealed a substantial decrease in the resistivity of Sn-doped Ga2O3 films, reducing it from 4.2 × 106 Ω cm to 2 × 105 Ω cm for the 2.5 at. % Sn:Ga2O3 compared to the nominally undoped Ga2O3.

Growth of α-Ga2O3 from Gallium Acetylacetonate under HCl Support by Mist Chemical Vapor Deposition

α-Ga2O3 films were grown on a c-plane sapphire substrate by HCl-supported mist chemical vapor deposition with multiple solution chambers, and the effect of HCl support on α-Ga2O3 film quality was investigated. The growth rate monotonically increased with increasing Ga supply rate. However, as the Ga supply rate was higher than 0.1 mmol/min, the growth rate further increased with increasing HCl supply rate. The surface roughness was improved by HCl support when the Ga supply rate was smaller than 0.07 mmol/min. The crystallinity of the α-Ga2O3 films exhibited an improvement with an increase in the film thickness, regardless of the solution preparation conditions, Ga supply rate, and HCl supply rate. These results indicate that there is a low correlation between the improvement of surface roughness and crystallinity in the α-Ga2O3 films grown under the conditions described in this paper.

A review on synthesis and applications of gallium oxide materials

Gallium oxide (Ga2O3), as a new kind of ultra-wide band gap semiconductor material, is widely studied in many fields, such as power electronics, UV - blind photodetectors, solar cells and so on. Owing to the advantages of its excellent performance and broad application prospects in semiconductor technology, Ga2O3 materials have attracted extensive academic and technological attention. This review mainly focuses on introducing the main liquid-phase synthesis methods of Ga2O3 nanoparticles, such as direct-precipitation, chemical bath deposition, hydrothermal, solvothermal, and sol-gel method, including the characteristics in process and advantages and disadvantages of these methods. Then, the effects of reaction conditions, such as pH, capping agent, aging and calcination conditions, on the morphologies and sizes of the precursor and the final products were elucidated. Moreover, the applications of Ga2O3 particles in the fields of catalysis, gas sensors, and other devices in current research on Ga2O3 nanomaterials are discussed with the description of the basic working principle and influence factors.

Phase-Dependent Phonon Heat Transport in Nanoscale Gallium Oxide Thin Films

Different phases of Ga2O3 have been regarded as superior platforms for making new-generation high-performance electronic devices. However, understanding of thermal transport in different phases of nanoscale Ga2O3 thin-films remains challenging, owing to the lack of phonon transport models and systematic experimental investigations. Here, thermal conductivity (TC) and thermal boundary conductance (TBC) of the( 1 ¯ 010 ) $( {\bar 1010} )$ α-,( 2 ¯ 01 ) $( {\bar 201} )\;$ β-, and (001) κ-Ga2O3 thin films on sapphire are investigated. At ≈80 nm, the measured TC of α (8.8 W m-1 K-1) is ≈1.8 times and ≈3.0 times larger than that of β and κ, respectively, consistent with model based on density functional theory (DFT), whereas the model reveals a similar TC for the bulk α- and β-Ga2O3. The observed phase- and size-dependence of TC is discussed thoroughly with phonon transport properties such as phonon mean free path and group velocity. The measured TBC at Ga2O3/sapphire interface is analyzed with diffuse mismatch model using DFT-derived full phonon dispersion relation. Phonon spectral distribution of density of states, transmission coefficients, and group velocity are studied to understand the phase-dependence of TBC. This study provides insight into the fundamental phonon transport mechanism in Ga2O3 thin films and paves the way for improved thermal management of high-power Ga2O3-based devices.

Probing Hyperbolic Shear Polaritons in β-Ga2O3 Nanostructures Using STEM-EELS

Phonon polaritons, quasiparticles arising from strong coupling between electromagnetic waves and optical phonons, have potential for applications in subdiffraction imaging, sensing, thermal conduction enhancement, and spectroscopy signal enhancement. A new class of phonon polaritons in low-symmetry monoclinic crystals, hyperbolic shear polaritons (HShPs), have been verified recently in β-Ga2O3 by free electron laser (FEL) measurements. However, detailed behaviors of HShPs in β-Ga2O3 nanostructures still remain unknown. Here, by using monochromatic electron energy loss spectroscopy in conjunction with scanning transmission electron microscopy, the experimental observation of multiple HShPs in β-Ga2O3 in the mid-infrared (MIR) and far-infrared (FIR) ranges is reported. HShPs in various β-Ga2O3 nanorods and a β-Ga2O3 nanodisk are excited. The frequency-dependent rotation and shear effect of HShPs reflect on the distribution of EELS signals. The propagation and reflection of HShPs in nanostructures are clarified by simulations of electric field distribution. These findings suggest that, with its tunable broad spectral HShPs, β-Ga2O3 is an excellent candidate for nanophotonic applications.

Investigating Stable Low-Energy Gallium Oxide (Ga2O3) Polytypes: Insights into Electronic and Optical Properties from First Principles

This study provides a comprehensive analysis of the electronic and optical properties of low-energy gallium oxide (Ga2O3) polytypes not considered earlier. Among these polytypes, the monoclinic structure (β-Ga2O3) holds significant relevance for both research and practical applications due to its superior stability under typical conditions. The primary aim of this research is to identify new and stable Ga2O3 polytypes that may exist under zero-temperature and zero-pressure conditions. To achieve this objective, we employ the VASP code to investigate electrical and optical properties, as well as stability assessments. Additionally, we examine phonon and thermal properties, including heat capacity, for all polytypes. This study also encompasses the computation of full elastic tensors and elastic moduli for all polytypes at 0 K, with Poisson's and Pugh's ratios confirming their ductile nature. Furthermore, we present the first ever report on the Raman- and infrared (IR)-active modes of these stable Ga2O3 polytypes. Our findings reveal that these mechanically and dynamically stable Ga2O3 polytypes exhibit semiconductive properties, as evidenced by electronic band structure investigations. This research offers valuable insights into the optical characteristics of Ga2O3 polytypes with potential applications spanning various fields.

The calculated electronic and optical properties of β-Ga2O3 based on the first principles

INTRODUCTION

The electronic and optical properties of β-Ga2O3 have been investigated by CASTEP using first principles. It is found that β-Ga2O3 has an indirect band gap and the conduction band base is located at the Γ point. The stability of β-Ga2O3 is demonstrated by the calculation of elastic constants, and the ductility of β-Ga2O3 is demonstrated by the ratio of Poisson's ratio to shear modulus. The optical property analysis shows that β-Ga2O3 has a high absorption capacity in the ultraviolet region, but a low absorption capacity in visible and infrared light.

CONTEXT

The structure, optical, and electronic properties of β-Ga2O3 are calculated and analyzed based on first-principles calculation. The optimized structures of β-Ga2O3 are in good agreement with previously studied. In this paper, the elastic, electronic, and optical properties of β-Ga2O3 are calculated.

METHODS

The CASTEP code was employed to execute these calculations in the present work, where the exchange-correlation interactions were treated in the generalized gradient approximation (GGA) using the Perdew-Burke-Ernzerhof (PBE) functional in the geometry optimizations and electronic and elastic properties.

Site-directed cation ordering in chabazite-type AlxGa1-xPO4-34 frameworks revealed by NMR crystallography

We report the first synthesis of the mixed-metal chabazite-type AlxGa1-xPO4-34(mim) solid solution, containing 1-methylimidazolium, mim, as structure directing agent (SDA), from the parent mixed-metal oxide solid solution, γ-(AlxGa1-x)2O3. This hitherto unreported family of materials exhibits complex disorder, arising from the possible distributions of cations over available sites, the orientation of the SDA and the presence of variable amounts of water, which provides a prototype for understanding structural subtleties in nanoporous materials. In the as-made forms of the phosphate frameworks, there are three crystallographically distinct metal sites: two tetrahedral MO4 and one octahedral MO4F2 (M = Al, Ga). A combination of solid-state NMR spectroscopy and periodic DFT calculations reveals that the octahedral site is preferentially occupied by Al and the tetrahedral sites by Ga, leading to a non-random distribution of cations within the framework. Upon calcination to the AlxGa1-xPO4-34 framework, all metal sites are tetrahedral and crystallographically equivalent in the average R3̄ symmetry. The cation distribution was explored by 31P solid-state NMR spectroscopy, and it is shown that the non-random distribution demonstrated to exist in the as-made materials would be expected to give remarkably similar patterns of peak intensities to a random distribution owing to the change in average symmetry in the calcined materials.

Anisotropic Electron Mobility and Contact Resistance of β-Ga2O3 Obtained via Radio Frequency Transmission Line Methods on Schottky Devices

Monoclinic semiconducting β-Ga2O3 has drawn attention, particularly because its thin film could be achieved via mechanical exfoliation from bulk crystals, which is analogous to van der Waals materials' behavior. For the transistor devices with exfoliated β-Ga2O3, the channel direction becomes [010] for in-plane electron transport, which changes to vertical [100] near the source/drain (S/D) contact. Hence, anisotropic transport behavior is certainly worth to study but rarely reported. Here we achieve the vertical [100] direction electron mobility of 4.18 cm2/(V s) from Pt/β-Ga2O3 Schottky diodes with various thickness via radio frequency-transmission line method (RF-TLM), which is recently developed. The specific contact resistivity (ρc) could also be estimated from RF-TLM, to be 4.72 × 10-5 Ω cm2, which is quite similar to the value (5.25 × 10-5 Ω cm2) from conventional TLM proving the validity of RF-TLM. We also fabricate metal-semiconductor field-effect transistors (MESFETs) to study anisotropic transport behavior and contact resistance (RC). RC-free [010] in-plane mobility appears as high as maximum ∼67 cm2/(V s), extracted from total resistance in MESFETs.

Controlled Crystallinity of a Sn-Doped α-Ga2O3 Epilayer Using Rapidly Annealed Double Buffer Layers

Double buffer layers composed of (AlxGa1-x)2O3/Ga2O3 structures were employed to grow a Sn-doped α-Ga2O3 epitaxial thin film on a sapphire substrate using mist chemical vapor deposition. The insertion of double buffer layers improved the crystal quality of the upper-grown Sn-doped α-Ga2O3 thin films by blocking dislocation generated by the substrates. Rapid thermal annealing was conducted for the double buffer layers at phase transition temperatures of 700-800 °C. The slight mixing of κ and β phases further improved the crystallinity of the grown Sn-Ga2O3 thin film through local lateral overgrowth. The electron mobility of the Sn-Ga2O3 thin films was also significantly improved due to the smoothened interface and the diffusion of Al. Therefore, rapid thermal annealing with the double buffer layer proved advantageous in achieving strong electrical properties for Ga2O3 semiconductor devices within a shorter processing time.

Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications

Power electronics are becoming increasingly more important, as electrical energy constitutes 40% of the total primary energy usage in the USA and is expected to grow rapidly with the emergence of electric vehicles, renewable energy generation, and energy storage. New materials that are better suited for high-power applications are needed as the Si material limit is reached. Beta-phase gallium oxide (β-Ga2O3) is a promising ultra-wide-bandgap (UWBG) semiconductor for high-power and RF electronics due to its bandgap of 4.9 eV, large theoretical breakdown electric field of 8 MV cm-1, and Baliga figure of merit of 3300, 3-10 times larger than that of SiC and GaN. Moreover, β-Ga2O3 is the only WBG material that can be grown from melt, making large, high-quality, dopable substrates at low costs feasible. Significant efforts in the high-quality epitaxial growth of β-Ga2O3 and β-(AlxGa1-x)2O3 heterostructures has led to high-performance devices for high-power and RF applications. In this report, we provide a comprehensive summary of the progress in β-Ga2O3 field-effect transistors (FETs) including a variety of transistor designs, channel materials, ohmic contact formations and improvements, gate dielectrics, and fabrication processes. Additionally, novel structures proposed through simulations and not yet realized in β-Ga2O3 are presented. Main issues such as defect characterization methods and relevant material preparation, thermal studies and management, and the lack of p-type doping with investigated alternatives are also discussed. Finally, major strategies and outlooks for commercial use will be outlined.

Multi-pixels gallium oxide UV detector array and optoelectronic applications

With the continuous advancement of deep-ultraviolet (DUV) communication and optoelectronic detection, research in this field has become a significant focal point in the scientific community. For more accurate information collection and transport, the photodetector array of many pixels is the key of the UV imaging and commnication systems, and its photoelectric performance seriously depends on semiconductor material and array layout. Gallium oxide (Ga2O3) is an emerging wide bandgap semicondutor material which has been widely used in DUV dectection. Therefore, this paper mainly focuses on Ga2O3semiconductor detector array which has gained widespread attention in the field of DUV technique, from the perspective of individual device to array and its optoelectonic integration, for reviewing and discussing the research progress in design, fabrication, and application of Ga2O3arrays in recent years. It includes the structure design and material selection of array units, units growth and array layout, response to solar blind light, the method of imaging and image recognition. Morever, the future development trend of the photodetector array has been analyzed and reflected, aiming to provide some useful suggestions for the optimizing array structure, improving patterned growth technology and material growth quality. As well as Ga2O3optoelectronic devices and their applications are discussed in view of device physics and photophysics in detector.

Size-Dependent Phase Transition in Ultrathin Ga2O3 Nanowires

Gallium oxide (Ga2O3) has attracted extensive attention as a potential candidate for low-dimensional metal-oxide-semiconductor field-effect transistors (MOSFETs) due to its wide bandgap, controllable doping, and low cost. The structural stability of nanoscale Ga2O3 is the key parameter for designing and constructing a MOSFET, which however remains unexplored. Using in situ transmission electron microscopy, we reveal the size-dependent phase transition of sub-2 nm Ga2O3 nanowires. Based on theoretical calculations, the transformation pathways from the initial monoclinic β-phase to an intermediate cubic γ-phase and then back to the β-phase have been mapped and identified as a sequence of Ga cation migrations. Our results provide fundamental insights into the Ga2O3 phase stability within the nanoscale, which is crucial for advancing the miniaturization, light weight, and integration of wide-bandgap semiconductor devices.

Universal radiation tolerant semiconductor

Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta (γ/β) double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Specifically, for room temperature experiments, they tolerate a disorder equivalent to hundreds of displacements per atom, without severe degradations of crystallinity; in comparison with, e.g., Si amorphizable already with the lattice atoms displaced just once. We explain this behavior by an interesting combination of the Ga- and O- sublattice properties in γ-Ga2O3. In particular, O-sublattice exhibits a strong recrystallization trend to recover the face-centered-cubic stacking despite the stronger displacement of O atoms compared to Ga during the active periods of cascades. Notably, we also explained the origin of the β-to-γ Ga2O3 transformation, as a function of the increased disorder in β-Ga2O3 and studied the phenomena as a function of the chemical nature of the implanted atoms. As a result, we conclude that γ/β double polymorph Ga2O3 structures, in terms of their radiation tolerance properties, benchmark a class of universal radiation tolerant semiconductors.

The Influence of Process Parameters on the Microstructural Properties of Spray-Pyrolyzed β-Ga2O3

In this work, the deposition of β-Ga₂O₃ microstructures and thin films was performed with Ga(NO₃)₃ solutions by ultrasonic nebulization and spray coating as low-cost techniques. By changing the deposition parameters, the shape of β-Ga₂O₃ microstructures was controlled. Micro-spheres were obtained by ultrasonic nebulization. Micro-flakes and vortices were fabricated by spray coating aqueous concentrated and diluted precursor solutions, respectively. Roundish flakes were achieved from water-ethanol mixtures, which were rolled up into tubes by increasing the number of deposition cycles. Increasing the ethanol-to-water ratio allows continuous thin films at an optimal Ga(NO₃)₃ concentration of 0.15 M and a substrate temperature of 190 °C to be formed. The monoclinic β-Ga₂O₃ phase was achieved by thermal annealing at 1000 °C in an ambient atmosphere. Scanning electronic microscopy (SEM), X-ray diffraction (XRD), and UV-Raman spectroscopy were employed to characterize these microstructures. In the XRD study, in addition to the phase information, the residual stress values were determined using the sin²(ψ) method. Raman spectroscopy confirms that the β-Ga₂O₃ phase and relative shifts of the Raman modes of the different microstructures can partially be assigned to residual stress. The high-frequency Raman modes proved to be more sensitive to shifting and broadening than the low-frequency Raman modes.

Temperature-Dependent and Time-Resolved Luminescence Characterization of γ-Ga2O3 Nanoparticles

The temperature-dependent luminescence properties of γ-Ga₂O₃ nanoparticles prepared by a precipitation method are investigated under steady-state and pulsed-light excitation. The main photoluminescence (PL) emission at room temperature consists of a single blue band centered around 2.76 eV, which hardly undergoes a blueshift of 0.03 eV when temperature goes down to 4 K. The emission behaves with a positive thermal quenching following an Arrhenius-type curve. The data fitting yields two non-radiative levels affecting the emission band with activation energies of 7 meV and 40 meV. On the other hand, time-resolved PL measurements have also been taken and studied as a function of the temperature. The data analysis has resulted in two lifetimes: one of 3.4 ns and the other of 32 ns at room temperature, which undergo an increase up to 4.5 ns and 65 ns at T = 4 K, respectively. Based on both stationary and dynamic PL results, a model of radiative and non-radiative levels associated with the main emission bands of γ-Ga₂O₃ is suggested. Finally, by using PL excitation measurements, an estimation of the bandgap and its variation with temperature between 4 K and room temperature were obtained and assessed against O'Donnell-Chen's law. With this variation it has been possible to calculate the average of the phonon energy, resulting in ⟨ħω⟩ = 10 ± 1 meV.

In situ X-ray diffraction study of the solvothermal formation mechanism of gallium oxide nanoparticles

Gallium oxides are of broad interest due to their wide band gaps and attractive photoelectric properties. Typically, the synthesis of gallium oxide nanoparticles is based on a combination of solvent-based methods and subsequent calcination, but detailed information about solvent based formation processes is lacking, and this limits the tailoring of materials. Here we have examined the formation mechanisms and crystal structure transformations of gallium oxides during solvothermal synthesis using in situ X-ray diffraction. γ-Ga₂O₃ readily forms over a wide range of conditions. In contrast, β-Ga₂O₃ only forms at high temperatures (T > 300 °C), and it is always preceded by γ-Ga₂O₃, indicating that γ-Ga₂O₃ is a crucial part of the formation mechanism of β-Ga₂O₃. The activation energy for formation of β-Ga₂O₃ from γ-Ga₂O₃ is determined to be 90-100 kJ mol^-1 in ethanol, water and aqueous NaOH based on kinetic modelling of phase fractions obtained from multi-temperature in situ X-ray diffraction data. At low temperatures GaOOH and Ga₅O₇OH form in aqueous solvent, but these phases are also obtained from γ-Ga₂O₃. Systematic exploration of synthesis parameters such as temperature, heating rate, solvent and reaction time reveal that they all affect the resulting product. In general, the solvent based reaction paths are different from reports on solid state calcination studies. This underlines that the solvent is an active part of the solvothermal reactions and to a high degree determines different formation mechanisms.

Structure and Thermal Stability of ε/κ-Ga2O3 Films Deposited by Liquid-Injection MOCVD

We report on crystal structure and thermal stability of epitaxial ε/κ-Ga2O3 thin films grown by liquid-injection metal−organic chemical vapor deposition (LI-MOCVD). Si-doped Ga2O3 films with a thickness of 120 nm and root mean square surface roughness of ~1 nm were grown using gallium-tetramethylheptanedionate (Ga(thd)3) and tetraethyl orthosilicate (TEOS) as Ga and Si precursor, respectively, on c-plane sapphire substrates at 600 °C. In particular, the possibility to discriminate between ε and κ-phase Ga2O3 using X-ray diffraction (XRD) φ-scan analysis or electron diffraction analysis using conventional TEM was investigated. It is shown that the hexagonal ε-phase can be unambiguously identified by XRD or TEM only in the case that the orthorhombic κ-phase is completely suppressed. Additionally, thermal stability of prepared ε/κ-Ga2O3 films was studied by in situ and ex situ XRD analysis and atomic force microscopy. The films were found to preserve their crystal structure at temperatures as high as 1100 °C for 5 min or annealing at 900 °C for 10 min in vacuum ambient (<1 mBar). Prolonged annealing at these temperatures led to partial transformation to β-phase Ga2O3 and possible amorphization of the films.

Atomic-Level Sn Doping Effect in Ga2O3 Films Using Plasma-Enhanced Atomic Layer Deposition

In this work, the atomic level doping of Sn into Ga₂O₃ films was successfully deposited by using a plasma-enhanced atomic layer deposition method. Here, we systematically studied the changes in the chemical state, microstructure evolution, optical properties, energy band alignment, and electrical properties for various configurations of the Sn-doped Ga₂O₃ films. The results indicated that all the films have high transparency with an average transmittance of above 90% over ultraviolet and visible light wavelengths. X-ray reflectivity and spectroscopic ellipsometry measurement indicated that the Sn doping level affects the density, refractive index, and extinction coefficient. In particular, the chemical microstructure and energy band structure for the Sn-doped Ga₂O₃ films were analyzed and discussed in detail. With an increase in the Sn content, the ratio of Sn-O bonding increases, but by contrast, the proportion of the oxygen vacancies decreases. The reduction in the oxygen vacancy content leads to an increase in the valence band maximum, but the energy bandgap decreases from 4.73 to 4.31 eV. Moreover, with the increase in Sn content, the breakdown mode transformed the hard breakdown into the soft breakdown. The C-V characteristics proved that the Sn-doped Ga₂O₃ films have large permittivity. These studies offer a foundation and a systematical analysis for assisting the design and application of Ga₂O₃ film-based transparent devices.

Transferable Ga2O3 Membrane for Vertical and Flexible Electronics via One-Step Exfoliation

Transferable Ga₂O₃ thin film membrane is desirable for vertical and flexible solar-blind photonics and high-power electronics applications. However, Ga₂O₃ epitaxially grown on rigid substrates such as sapphire, Si, and SiC hinders its exfoliation due to the strong covalent bond between Ga₂O₃ and substrates, determining its lateral device configuration and also hardly reaching the ever-increasing demand for wearable and foldable applications. Mica substrate, which has an atomic-level flat surface and high-temperature tolerance, could be a good candidate for the van der Waals (vdW) epitaxy of crystalline Ga₂O₃ membrane. Beyond that, benefiting from the weak vdW bond between Ga₂O₃ and mica substrate, in this work, the Ga₂O₃ membrane is exfoliated and transferred to arbitrary flexible and adhesive tape, allowing for the vertical and flexible electronic configuration. This straightforward exfoliation method is verified to be consistent and reproducible by the transfer and characterization of thick (∼380 nm)/thin (∼95 nm) κ-phase Ga₂O₃ and conductive n-type β-Ga₂O₃. Vertical photodetectors are fabricated based on the exfoliated Ga₂O₃ membrane, denoting the peak response at ∼250 nm. Through the integration of Ti/Au Ohmic contact and Ni/Ag Schottky contact electrode, the vertical photodetector exhibits self-powered photodetection behavior with a responsivity of 17 mA/W under zero bias. The vdW-bond-assisted exfoliation of the Ga₂O₃ membrane demonstrated here could provide enormous opportunities in the pursuit of vertical and flexible Ga₂O₃ electronics.

Gallium Oxide for Gas Sensor Applications: A Comprehensive Review

Ga₂O₃ has emerged as a promising ultrawide bandgap semiconductor for numerous device applications owing to its excellent material properties. In this paper, we present a comprehensive review on major advances achieved over the past thirty years in the field of Ga₂O₃-based gas sensors. We begin with a brief introduction of the polymorphs and basic electric properties of Ga₂O₃. Next, we provide an overview of the typical preparation methods for the fabrication of Ga₂O₃-sensing material developed so far. Then, we will concentrate our discussion on the state-of-the-art Ga₂O₃-based gas sensor devices and put an emphasis on seven sophisticated strategies to improve their gas-sensing performance in terms of material engineering and device optimization. Finally, we give some concluding remarks and put forward some suggestions, including (i) construction of hybrid structures with two-dimensional materials and organic polymers, (ii) combination with density functional theoretical calculations and machine learning, and (iii) development of optical sensors using the characteristic optical spectra for the future development of novel Ga₂O₃-based gas sensors.

A Review on Gallium Oxide Materials from Solution Processes

Gallium oxide (Ga₂O₃) materials can be fabricated via various methods or processes. It is often mentioned that it possesses different polymorphs (α-, β-, γ-, δ- and ε-Ga₂O₃) and excellent physical and chemical properties. The basic properties, crystalline structure, band gap, density of states, and other properties of Ga₂O₃ will be discussed in this article. This article extensively discusses synthesis of pure Ga₂O₃, co-doped Ga₂O₃ and Ga₂O₃-metal oxide composite and Ga₂O₃/metal oxide heterostructure nanomaterials via solution-based methods mainly sol-gel, hydrothermal, chemical bath methods, solvothermal, forced hydrolysis, reflux condensation, and electrochemical deposition methods. The influence of the type of precursor solution and the synthesis conditions on the morphology, size, and properties of final products is thoroughly described. Furthermore, the applications of Ga₂O₃ will be introduced and discussed from these solution processes, such as deep ultraviolet photodetector, gas sensors, pH sensors, photocatalytic and photodegradation, and other applications. In addition, research progress and future outlook are identified.

Tackling Disorder in γ-Ga2 O3

Ga₂ O₃ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga₂ O₃ offers potential for electronic structure engineering, which is of particular interest for a range of applications, such as power electronics. γ-Ga₂ O₃ presents a particular challenge across synthesis, characterization, and theory due to its inherent disorder and resulting complex structure-electronic-structure relationship. Here, density functional theory is used in combination with a machine-learning approach to screen nearly one million potential structures, thereby developing a robust atomistic model of the γ-phase. Theoretical results are compared with surface and bulk sensitive soft and hard X-ray photoelectron spectroscopy, X-ray absorption spectroscopy, spectroscopic ellipsometry, and photoluminescence excitation spectroscopy experiments representative of the occupied and unoccupied states of γ-Ga₂ O₃ . The first onset of strong absorption at room temperature is found at 5.1 eV from spectroscopic ellipsometry, which agrees well with the excitation maximum at 5.17 eV obtained by photoluminescence excitation spectroscopy, where the latter shifts to 5.33 eV at 5 K. This work presents a leap forward in the treatment of complex, disordered oxides and is a crucial step toward exploring how their electronic structure can be understood in terms of local coordination and overall structure.

Sonochemical synthesis of supersaturated Ga-Al liquid-alloy fine particles and Al3+-doped γ-Ga2O3 nanoparticles by direct oxidation at near room temperature

In this study, we investigated the fabrication of supersaturated gallium (Ga)-aluminum (Al) liquid alloy and Al3+-doped γ-Ga2O3 nanoparticles (NPs) at near room temperature (60 °C) using sonochemical and sonophysical effects. Supersaturated Ga-Al liquid alloy microparticles (Dav = 1.72 µm) were formed and stabilized at 60 °C by the thermal nonequilibrium field provided by sonochemical hot spots. Compared with liquid Ga, supersaturated Ga-Al liquid alloy was rapidly oxidized to a uniform oxide without Al2O3 or Al deposition. Thus, ultrafine Al3+-doped γ-Ga2O3 NPs were obtained after only 1 h of ultrasonic irradiation at 60 °C. The oxidation of liquid Ga was remarkably accelerated by alloying with metallic Al and ultrasonic irradiation, and the time was shortened. The average diameter and surface area of the γ-Ga2O3-based NPs were 59 nm and 181 m2/g, respectively. Compared with γ-Ga2O3, the optical bandgap of the Al3+-doped γ-Ga2O3 NPs was broadened, and the thermal stability improved, indicating Al3+-doping into the γ-Ga2O3 lattice. However, the lattice constant of γ-Ga2O3 was almost unchanged with or without Al3+-doping. Al3+ was introduced into the defect sites of Ga3+, which were massively induced in the defective spinel structure during ultrasonic processing. Therefore, sonochemical processing, which provides nonequilibrium reaction fields, is suitable for the synthesis of supersaturated and metastable materials in metals and ceramics fields.

Ultrasensitive Flexible κ-Phase Ga2O3 Solar-Blind Photodetector

Flexible Ga₂O₃ photodetectors have attracted considerable interest owing to their potential use in the development of implantable, foldable, and wearable optoelectronics. In particular, β-phase Ga₂O₃ has been most widely investigated due to the highest thermodynamic stability. However, high-quality β-phase Ga₂O₃ relies on the ultrahigh crystallization temperature (usually ≥750 °C), beyond the thermal tolerance of most flexible substrates. In this work, we epitaxially grow a high-quality metastable κ-phase Ga₂O₃ (002) thin film on a flexible mica (001) substrate under 680 °C and develop a flexible κ-Ga₂O₃ thin film photodetector with ultrahigh performance. Epitaxial κ-Ga₂O₃ and the mica substrate are maintained to be thermally stable up to 750 °C, suggesting their potential for harsh environment applications. The responsivity, on/off ratio, detectivity, and external quantum efficiency of the fabricated photodetector are 703 A/W, 1.66 × 10⁷, 4.08 × 10¹⁴ Jones, and 3.49 × 10⁵ %, respectively, for 250 nm incident light and a 20 V bias voltage. These values are record-high values reported to date for flexible Ga₂O₃ photodetectors. Furthermore, the flexible photodetector shows robust flexibility for bending radii of 1, 2, and 3 cm. More importantly, it shows strong mechanical stability against 10,000 bending test cycles. These results reveal the significance of high-quality κ-phase Ga₂O₃ grown heteroepitaxially on a flexible mica substrate, especially its potential for use in future flexible solar-blind detection systems.

Gallium Oxide Nanostructures: A Review of Synthesis, Properties and Applications

Gallium oxide, as an emerging semiconductor, has attracted a lot of attention among researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 MV/cm. This paper presents a review on different chemical and physical techniques for synthesis of nanostructured β-gallium oxide, as well as its properties and applications. The polymorphs of Ga₂O₃ are highlighted and discussed along with their transformation state to β-Ga₂O₃. Different processes of synthesis of thin films, nanostructures and bulk gallium oxide are reviewed. The electrical and optical properties of β-gallium oxide are also highlighted, based on the synthesis methods, and the techniques for tuning its optical and electrical properties compared. Based on this information, the current, and the possible future, applications for β-Ga₂O₃ nanostructures are discussed.

Low-energy Ga2O3 polymorphs with low electron effective masses

We predict three Ga₂O₃ polymorphs with P2₁/c or Pnma symmetry. The formation energies of P2₁/c Ga₂O₃, Pnma-I Ga₂O₃, and Pnma-II Ga₂O₃ are 57 meV per atom, 51 meV per atom, and 23 meV per atom higher than that of β-Ga₂O₃, respectively. All the polymorphs are shown to be dynamically and mechanically stable. P2₁/c Ga₂O₃ is a quasi-direct wide band gap semiconductor (3.83 eV), while Pnma-I Ga₂O₃ and Pnma-II Ga₂O₃ are direct wide band gap semiconductors (3.60 eV and 3.70 eV, respectively). Simulated X-ray diffraction patterns are provided for experimental confirmation of the predicted structures. The polymorphs turn out to provide low electron effective masses, which is of great benefit to high-power electronic devices.

Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation

Currently, a significant portion (~50%) of global warming emissions, such as CO₂, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve the XXI century climatic goals. Ultra-wide bandgap (UWBG) semiconductors are at the very frontier of electronics for energy management or energy electronics. A new generation of UWBG semiconductors will open new territories for higher power rated power electronics and solar-blind deeper ultraviolet optoelectronics. Gallium oxide—Ga₂O₃ (4.5–4.9 eV), has recently emerged pushing the limits set by more conventional WBG (~3 eV) materials, such as SiC and GaN, as well as for transparent conducting oxides (TCO), such asIn₂O₃, ZnO and SnO₂, to name a few. Indeed, Ga₂O₃ as the first oxide used as a semiconductor for power electronics, has sparked an interest in oxide semiconductors to be investigated (oxides represent the largest family of UWBG). Among these new power electronic materials, Al_xGa_1-xO₃ may provide high-power heterostructure electronic and photonic devices at bandgaps far beyond all materials available today (~8 eV) or ZnGa₂O₄ (~5 eV), enabling spinel bipolar energy electronics for the first time ever. Here, we review the state-of-the-art and prospects of some ultra-wide bandgap oxide semiconductor arising technologies as promising innovative material solutions towards a sustainable zero emission society.

Disorder-Induced Ordering in Gallium Oxide Polymorphs

Polymorphs are common in nature and can be stabilized by applying external pressure in materials. The pressure and strain can also be induced by the gradually accumulated radiation disorder. However, in semiconductors, the radiation disorder accumulation typically results in the amorphization instead of engaging polymorphism. By studying these phenomena in gallium oxide we found that the amorphization may be prominently suppressed by the monoclinic to orthorhombic phase transition. Utilizing this discovery, a highly oriented single-phase orthorhombic film on the top of the monoclinic gallium oxide substrate was fabricated. Exploring this system, a novel mode of the lateral polymorphic regrowth, not previously observed in solids, was detected. In combination, these data envisage a new direction of research on polymorphs in Ga_{2}O_{3} and, potentially, for similar polymorphic families in other materials.

Wet Etching in β-Ga2O3 Bulk Single Crystal

Beta-phase gallium oxide (β-Ga2O3) bulk single crystal has received increasing attentions due to their fantastic performances and widespread use in power devices and solar-blind photodetectors. Wet etching has proved to...

Microstrip Array Ring FETs with 2D p-Ga2O3 Channels Grown by MOCVD

Gallium oxide (Ga2O3) thin films of various thicknesses were grown on sapphire (0001) substrates by metal organic chemical vapor deposition (MOCVD) using trimethylgallium (TMGa), high purity deionized water, and silane (SiH4) as gallium, oxygen, and silicon precursors, respectively. N2 was used as carrier gas. Hall measurements revealed that films grown with a lower VI/III ratio had a dominant p-type conduction with room temperature mobilities up to 7 cm2/Vs and carrier concentrations up to ~1020 cm−3 for thinner layers. High resolution transmission electron microscopy suggested that the layers were mainly κ phase. Microstrip field-effect transistors (FETs) were fabricated using 2D p-type Ga2O3:Si, channels. They achieved a maximum drain current of 2.19 mA and an on/off ratio as high as ~108. A phenomenological model for the p-type conduction was also presented. As the first demonstration of a p-type Ga2O3, this work represents a significant advance which is state of the art, which would allow the fabrication of p-n junction based devices which could be smaller/thinner and bring both cost (more devices/wafer and less growth time) and operating speed (due to miniaturization) advantages. Moreover, the first scaling down to 2D device channels opens the prospect of faster devices and improved heat evacuation.

Pair distribution function and 71Ga NMR study of aqueous Ga3+ complexes

The atomic structures, and thereby the coordination chemistry, of metal ions in aqueous solution represent a cornerstone of chemistry, since they provide first steps in rationalizing generally observed chemical information. However, accurate structural information about metal ion solution species is often surprisingly scarce. Here, the atomic structures of Ga³⁺ ion complexes were determined directly in aqueous solutions across a wide range of pH, counter anions and concentrations by X-ray pair distribution function analysis and ⁷¹Ga NMR. At low pH (<2) octahedrally coordinated gallium dominates as either monomers with a high degree of solvent ordering or as Ga-dimers. At slightly higher pH (pH ≈ 2–3) a polyoxogallate structure is identified as either Ga₃₀ or Ga₃₂ in contradiction with the previously proposed Ga₁₃ Keggin structures. At neutral and slightly higher pH nanosized GaOOH particles form, whereas for pH > 12 tetrahedrally coordinated gallium ions surrounded by ordered solvent are observed. The effects of varying either the concentration or counter anion were minimal. The present study provides the first comprehensive structural exploration of the aqueous chemistry of Ga³⁺ ions with atomic resolution, which is relevant for both semiconductor fabrication and medical applications.

With changing pH four different structural regions in Ga³⁺ aqueous solutions are observed. In contrast the effects of different anions and concentrations are minimal.

Ga2O3(Sn) Oxides for High-Temperature Gas Sensors

Gallium(III) oxide is a promising functional wide-gap semiconductor for high temperature gas sensors of the resistive type. Doping of Ga₂O₃ with tin improves material conductivity and leads to the complicated influence on phase content, microstructure, adsorption sites, donor centers and, as a result, gas sensor properties. In this work, Ga₂O₃ and Ga₂O₃(Sn) samples with tin content of 0–13 at.% prepared by aqueous co-precipitation method were investigated by X-ray diffraction, nitrogen adsorption isotherms, X-ray photoelectron spectroscopy, infrared spectroscopy and probe molecule techniques. The introduction of tin leads to a decrease in the average crystallite size, increase in the temperature of β-Ga₂O₃ formation. The sensor responses of all Ga₂O₃(Sn) samples to CO and NH₃ have non-monotonous character depending on Sn content due to the following factors: the formation of donor centers and the change of free electron concentration, increase in reactive chemisorbed oxygen ions concentration, formation of metastable Ga₂O₃ phases and segregation of SnO₂ on the surface of Ga₂O₃(Sn) grains.

In-plane crystalline anisotropy of bulk β-Ga2O3

The anisotropy of X-ray diffraction scanning of (201) β-Ga2O3 bulk material has been investigated. Symmetric rocking curves (RCs) exhibit distinctly different broadening along different azimuths, with a maximum along [102] and a minimum along a direction rotated by 30° from [010]. Williamson–Hall analysis was applied to study possible factors causing the broadening in these RCs, including instrumental factors, mosaic tilt and coherent scattering. It was found that the RC broadening is determined by both isotropic mosaic tilt and anisotropy in the length over which the crystal structure is not disrupted by limiting factors such as grain boundaries or stacking faults, which we term the `lateral limited size'. In this case, the lateral limited size is governed by {200} stacking faults along the [102] direction and grain boundaries along the [010] direction. The result presents a new anisotropy characteristic of (201) β-Ga2O3.

Research of nanopore structure of Ga2O3 film in MOCVD for improving the performance of UV photoresponse

Using the mechanism of self-reactive etching between Ga and Ga₂O₃, Ga₂O₃ nanopore films were fabricated. The self-reactive etching effects based on as-grown and annealed Ga₂O₃ films by metal organic chemical vapor deposition were compared. It was found that the nanopore film based on as-grown Ga₂O₃ film has a uniform size, high density and a small diameter. Ultraviolet-visible light reflection spectra and transmission spectra show that the nanopore film could effectively reduce the reflectivity of light and enhance the light absorption. Based on the as-grown Ga₂O₃ film and its nanopore film, metal-semiconductor-metal structure solar blind ultraviolet photodetectors (PD) were fabricated. Under 5 V bias, the light-dark current ratio of the nanopore film PD is about 2.5 × 10² times that of the film PD, the peak responsivity of the nanopore film PD is about 49 times that of the film PD. The rejection ratio is 4.6 × 10³, about 1.15 × 10² times that of the film PD. The nanopore structure effectively increases the surface-volume ratio of film. The photoelectric detection performance and response performance of the nanopore film PD could be significantly enhanced.

Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering

The suitability of Ti as a band gap modifier for α-Ga₂O₃ was investigated, taking advantage of the isostructural α phases and high band gap difference between Ti₂O₃ and Ga₂O₃. Films of (Ti,Ga)₂O₃ were synthesized by atomic layer deposition on sapphire substrates, and characterized to determine how crystallinity and band gap vary with composition for this alloy. We report the deposition of high quality α-(Ti_xGa_1−x)₂O₃ films with x = 3.7%. For greater compositions the crystalline quality of the films degrades rapidly, where the corundum phase is maintained in films up to x = 5.3%, and films containing greater Ti fractions being amorphous. Over the range of achieved corundum phase films, that is 0% ≤ x ≤ 5.3%, the band gap energy varies by ∼270 meV. The ability to maintain a crystalline phase at low fractions of Ti, accompanied by a modification in band gap, shows promising prospects for band gap engineering and the development of wavelength specific solar-blind photodetectors based on α-Ga₂O₃.

Optical Identification of Materials Transformations in Oxide Thin Films

Recent advances in high-throughput experimentation for combinatorial studies have accelerated the discovery and analysis of materials across a wide range of compositions and synthesis conditions. However, many of the more powerful characterization methods are limited by speed, cost, availability, and/or resolution. To make efficient use of these methods, there is value in developing approaches for identifying critical compositions and conditions to be used as a priori knowledge for follow-up characterization with high-precision techniques, such as micrometer-scale synchrotron-based X-ray diffraction (XRD). Here, we demonstrate the use of optical microscopy and reflectance spectroscopy to identify likely phase-change boundaries in thin film libraries. These methods are used to delineate possible metastable phase boundaries following lateral-gradient laser spike annealing (lg-LSA) of oxide materials. The set of boundaries are then compared with definitive determinations of structural transformations obtained using high-resolution XRD. We demonstrate that the optical methods detect more than 95% of the structural transformations in a composition-gradient La-Mn-O library and a Ga₂O₃ sample, both subject to an extensive set of lg-LSA anneals. Our results provide quantitative support for the value of optically detected transformations as a priori data to guide subsequent structural characterization, ultimately accelerating and enhancing the efficient implementation of micrometer-resolution XRD experiments.

Chemical Synthesis of β-Ga2O3 Microrods on Silicon and Its Dependence on the Gallium Nitrate Concentration

β-Ga₂O₃ microrods have attracted increasing attention for their integration into solar blind/UV photodetectors and gas sensors. However, their synthesis using a low-temperature chemical route in aqueous solution is still under development, and the physicochemical processes at work have not yet been elucidated. Here, we develop a double-step process involving the growth of α-GaOOH microrods on silicon using chemical bath deposition and their further structural conversion to β-Ga₂O₃ microrods by postdeposition thermal treatment. It is revealed that the concentration of gallium nitrate has a drastic effect on tuning the morphology, dimensions (i.e., diameter and length), and density of α-GaOOH microrods over a broad range, in turn governing the morphological properties of β-Ga₂O₃ microrods. The physicochemical processes in aqueous solution are investigated by thermodynamic computations yielding speciation diagrams of Ga(III) species and theoretical solubility plots of GaOOH(s). In particular, the qualitative evolution of the morphological properties of α-GaOOH microrods with the concentration of gallium nitrate is found to be correlated with the supersaturation in the bath and discussed in light of the standard nucleation and growth theory. Interestingly, the structural conversion following the thermal treatment at 900 °C in air results in the formation of pure β-Ga₂O₃ microrods without any residual minor phases and with tunable morphology and improved structural ordering. These findings reporting a double-step process for forming high-quality pure β-Ga₂O₃ microrods on silicon open many perspectives for their integration onto a large number of substrates for solar blind/UV photodetection and gas sensing.

Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition

This work explores the applicability of atomic layer deposition (ALD) in producing highly oriented crystalline gallium oxide films on foreign substrates at low thermal budgets. The effects of substrate, deposition temperature, and annealing process on formation of crystalline gallium oxide are discussed. The Ga₂O₃ films exhibited a strong preferred orientation on the c-plane sapphire substrate. The onset of formation of crystalline gallium oxide is determined, at which only two sets of planes, i.e., α-Ga₂O₃ (006) and β-Ga₂O₃ (4̅02), are present parallel to the surface. More specifically, this work reports, for the first time, that epitaxial gallium oxide films on sapphire start to form at deposition temperatures ≥ 190 °C by using an optimized plasma-enhanced ALD process such that α-Ga₂O₃ (006)∥α-Al₂O₃ (006) and β-Ga₂O₃ (2̅01)∥α-Al₂O₃ (006). Both α-Ga₂O₃ (006) and β-Ga₂O₃ (2̅01) planes are polar planes (i.e., consisting of only one type of atom, either Ga or O) and, therefore, favorable to form by ALD at such low deposition temperatures. Ellipsometry and van der Pauw measurements confirmed that the crystalline films have optical and electrical properties close to bulk gallium oxide. The film grown at 277 °C was determined to have superior properties among as-deposited films. Using TEM to locate α-Ga₂O₃ and β-Ga₂O₃ domains in the as-deposited crystalline films, we proposed a short annealing scheme to limit the development of α-Ga₂O₃ domains in the film and produce pure β-Ga₂O₃ films via an energy-efficient process. A pure β-Ga₂O₃ phase on sapphire with β-Ga₂O₃ (2̅01)∥α-Al₂O₃ (006) was successfully achieved by using the proposed process at the low annealing temperature of 550 °C preceded by the low deposition temperature of 190 °C. The results of this work enable epitaxial growth of gallium oxide thin films, with superior material properties offered by ALD, not only with potential applications as a high-performance material in reducing global energy consumption but also with an energy-efficient fabrication process.

Synthesis and Polymorphism of Mixed Aluminum-Gallium Oxides

The synthesis of a new solid solution of the oxyhydroxide Ga_5–xAl_xO₇(OH) is investigated via solvothermal reaction between gallium acetylacetonate and aluminum isopropoxide in 1,4-butanediol at 240 °C. A limited compositional range of 0 ≤ x ≤ 1.5 is produced, with the hexagonal unit cell parameters refined from powder X-ray diffraction (XRD) showing a linear contraction in unit cell volume with an increase in Al content. Solid-state ²⁷Al and ⁷¹Ga nuclear magnetic resonance (NMR) spectroscopies show a strong preference for Ga to occupy the tetrahedral sites and Al to occupy the octahedral sites. Using isopropanol as the solvent, γ-Ga_2–xAl_xO₃ defect spinel solid solutions with x ≤ 1.8 can be prepared at 240 °C in 24 h. These materials are nanocrystalline, as evidenced by their broad diffraction profiles; however, the refined cubic lattice parameter shows a linear relationship with the Ga:Al content, and solid-state NMR spectroscopy again shows a preference for Al to occupy the octahedral sites. Thermal decomposition of Ga_5–xAl_xO₇(OH) occurs via poorly ordered materials that resemble ε-Ga_2–xAl_xO₃ and κ-Ga_2–xAl_xO₃, but γ-Ga_2–xAl_xO₃ transforms above 750 °C to monoclinic β-Ga_2–xAl_xO₃ for 0 ≤ x ≤ 1.3 and to hexagonal α-Ga_2–xAl_xO₃ for x = 1.8, with intermediate compositions of 1.3 < x < 1.8 giving mixtures of the α- and β-polymorphs. Solid-state NMR spectroscopy shows only the expected octahedral Al for α-Ga_2–xAl_xO₃, and for β-Ga_2–xAl_xO₃, the ∼1:2 tetrahedral:octahedral Al ratio is in good agreement with the results of Rietveld analysis of the average structures against powder XRD data. Relative energies calculated by periodic density functional theory confirm that there is an ∼5.2 kJ mol^–1 penalty for tetrahedral rather than octahedral Al in Ga_5–xAl_xO₇(OH), whereas this penalty is much smaller (∼2.0 kJ mol^–1) for β-Ga_2–xAl_xO₃, in good qualitative agreement with the experimental NMR spectra.

Solvothermal reactions in 1,4-butanediol or isopropanol yield a new solid solution of the oxyhydroxide Ga_5−xAl_xO₇(OH) or the spinel series γ-Ga_2−xAl_xO₃, respectively. We have explored the possible composition range and the thermal stability of the materials. For γ-Ga_2−xAl_xO₃ (x ≤ 1.3), transformation to the monoclinic β-polymorph occurs above 1000 °C, providing a convenient route to this material of interest for electronic applications.

Synthesis, spectroscopic and luminescence properties of Ga-doped γ-Al2O3

Gallium-doped aluminum oxide (Al_1-xGa_x)₂O₃ with γ-Al₂O₃ (spinel) structure has been synthesized by the precursor method using the formate Al_1-xGa_x(OH)(HCOO)₂ as a precursor. The examination of Al_1-xGa_x(OH)(HCOO)₂ (x = 0.0, 0.1, 0.2, 0.3, 0.4) was carried out by X-ray powder diffraction, Infrared, Raman spectroscopy and differential-thermal methods. The solid solutions γ-(Al_1-xGa_x)₂O₃ with х≤0.2 have been synthesized by thermolysis of precursors in helium atmosphere at 700 °C; they exhibit white-blue emission under UV excitation, whose intensity lowers with increasing dopant concentration. As an independent method, the DFT calculations confirmed thermodynamically the stability field of γ-(Al_1-xGa_x)₂O₃ solid solutions and the NMR data on relative abundance of Al and Ga within the tetrahedral and octahedral sites in the metal sublattice. Furthermore, the structural and thermodynamic properties of carbon-containing impurities within these compounds were suggested theoretically as possible models of luminescence emission centers. The experimentally observed Ga-dependent quenching of luminescence was explained using the competition between C2p and Ga4p states within the band gap of γ-Al₂O₃.

High-performance β-Ga2O3 thickness dependent solar blind photodetector

Gallium oxide (Ga₂O₃) has been studied as one of the most promising wide bandgap semiconductors during the past decade. Here, we prepared high quality β-Ga₂O₃ films by pulsed laser deposition. β-Ga₂O₃ films of different thicknesses were achieved and their crystal properties were comprehensively studied. As thickness increases, grain size and surface roughness are both increased. Based on these β-Ga₂O₃ films, a series of ultraviolet (UV) photodetectors with interdigital electrodes structure were prepared. These devices embrace an ultralow dark current of 100 fA, and high photocurrent on/off ratio of 10E8 under UV light illumination. The photoresponse time is 4 ms which is faster than most of previous works. This work paves the way for the potential application of Ga₂O₃ in the field of UV detection.

Ga Ion-doped ZrO2 Catalyst Characterized by XRD, XAFS, and 2-Butanol Decomposition

Group 2, 3, and 13 element-doped zirconium oxide catalysts M-ZrO₂ (M = Mg, Sr, Y, La, Ce, Sm, Er, Yb, B, Al, Ga, In, and Tl; 5 mol%) were prepared by impregnation of each metal salt aqueous solution on amorphous zirconium hydroxide, followed by calcination at 773 K. The M-ZrO₂ samples were characterized by the catalytic performance of 2-butanol decomposition at 573 K, XRD, XANES and EXAFS spectroscopic techniques. Detailed analyses were performed herein for a series of Ga-ZrO₂ with various doping amounts in the range of 1 - 60 mol%. The addition of Group 2 and 3 elements little influenced the catalytic performance of ZrO₂ itself to promote dehydration to produce 1-butene with 90% selectivity. Ga-ZrO₂ and In-ZrO₂ gave methyl ethyl ketone as the main product via dehydrogenation. The doped Ga ion mainly existed inside the bulk of zirconia by forming the Ga_xZr_1-xO₂ solid solution up to 5 mol%. Highly doped species more than 10 mol% aggregated to form ε-Ga₂O₃. Each fraction forming the solid solution and Ga₂O₃-like species was evaluated by XANES analysis.