Recent advances in self-powered and flexible UVC photodetectors

Optimizing Photoelectrochemical UV Imaging Photodetection: Construction of Anatase/Rutile Heterophase Homojunctions and Oxygen Vacancies Engineering in MOF-Derived TiO2

Self-powered photoelectrochemical (PEC) ultraviolet photodetectors (UVPDs) are promising for next-generation energy-saving and highly integrated optoelectronic systems. Constructing a heterojunction is an effective strategy to increase the photodetection performance of PEC UVPDs because it can promote the separation and transfer of photogenerated carriers. However, both crystal defects and lattice mismatch lead to deteriorated device performance. Here, we introduce a structural regulation strategy to prepare TiO2 anatase-rutile heterophase homojunctions (A-R HHs) with oxygen vacancies (OVs) photoanodes through an in situ topological transformation of titanium metal-organic framework (Ti-MOF) by pyrolysis treatment. The cooperative interaction between A-R HHs and OVs suppresses carrier recombination and accelerates carrier transport, thereby significantly enhancing the photodetection performance of PEC UVPDs. The obtained device realizes a high on/off ratio of 10,752, a remarkable responsivity of 24.15 mA W-1, an impressive detectivity of 3.28 × 1011 Jones, and excellent cycling stability. More importantly, under 365 nm light illumination, a high-resolution image of "HUST" (the abbreviation of Harbin University of Science and Technology) was obtained perfectly, confirming the excellent optical imaging capability of the device. This research not only presents an advanced methodology for constructing TiO2-based PEC UVPDs, but also provides strategic guidance for enhancing their performance and practical applications.

Wide Bandgap Semiconductors for Ultraviolet Photodetectors: Approaches, Applications, and Prospects

Ultraviolet (UV) light, invisible to the human eye, possesses both benefits and risks. To harness its potential, UV photodetectors (PDs) have been engineered. These devices can convert UV photons into detectable signals, such as electrical impulses or visible light, enabling their application in diverse fields like environmental monitoring, healthcare, and aerospace. Wide bandgap semiconductors, with their high-efficiency UV light absorption and stable opto-electronic properties, stand out as ideal materials for UV PDs. This review comprehensively summarizes recent advancements in both traditional and emerging wide bandgap-based UV PDs, highlighting their roles in UV imaging, communication, and alarming. Moreover, it examines methods employed to enhance UV PD performance, delving into the advantages, challenges, and future research prospects in this area. By doing so, this review aims to spark innovation and guide the future development and application of UV PDs.

Effect of Post-Implantation Heat Treatment Conditions on Photoluminescent Properties of Ion-Synthesized Gallium Oxide Nanocrystals

A novel and promising way for creating nanomaterials based on gallium oxide is the ion synthesis of Ga2O3 nanocrystals in a SiO2/Si dielectric matrix. The properties of nanocrystals are determined by the conditions of ion synthesis-the parameters of ion irradiation and post-implantation heat treatment. In this work, the light-emitting properties of Ga2O3 nanocrystals were studied depending on the temperature and annealing atmosphere. It was found that annealing at a temperature of 900 °C leads to the appearance of intense luminescence with a maximum at ~480 nm caused by the recombination of donor-acceptor pairs. An increase in luminescence intensity upon annealing in an oxidizing atmosphere is shown. Based on data from photoluminescence excitation spectroscopy and high-resolution transmission electron microscopy, a hypothesis about the possibility of the participation of a quantum-size effect during radiative recombination is proposed. A mechanism for the formation of Ga2O3 nanocrystals during ion synthesis is suggested, which makes it possible to describe the change in the luminescent properties of the synthesized samples with varying conditions of post-implantation heat treatment.

Self-Powered Photodetector Based on Ag/CH3NH3PbI3/C Asymmetric Dual-Terminal Device

CH3NH3PbI3 is capable of exhibiting a superior photoresponse to visible light, but its self-powered devices are typically formed through p-n junctions. In this study, we fabricated a Ag/CH3NH3PbI3/C dual-terminal asymmetric electrode device using a single CH3NH3PbI3 perovskite micro/nanowire, enabling both the photoresponse and self-powered characteristics of CH3NH3PbI3 to visible light. Compared with traditional p-n junction devices, this simple device demonstrates enhanced interface photovoltaic effects by optimizing the combination of the Ag electrode with CH3NH3PbI3, resulting in superior self-powered characteristics. Under low bias voltage, the device achieves a significant on/off ratio of 103, with superior sensitivity and responsivity as well as a maximum rectification ratio of about 12. The photogenerated voltage and current reach approximately 0.8 V and 2 nA, respectively. This simple, compact, and self-powered asymmetric device exhibits great potential for applications in self-powered optoelectronics and wearable devices. This research provides a promising approach for recognizing and utilizing surface state effects in single nanoscale structures.

Ultraviolet Photodetectors: From Photocathodes to Low-Dimensional Solids

The paper presents the long-term evolution and recent development of ultraviolet photodetectors. First, the general theory of ultraviolet (UV) photodetectors is briefly described. Then the different types of detectors are presented, starting with the older photoemission detectors through photomultipliers and image intensifiers. More attention is paid to silicon and different types of wide band gap semiconductor photodetectors such as AlGaN, SiC-based, and diamond detectors. Additionally, Ga₂O₃ is considered a promising material for solar-blind photodetectors due to its excellent electrical properties and a large bandgap energy. The last part of the paper deals with new UV photodetector concepts inspired by new device architectures based on low-dimensional solid materials. It is shown that the evolution of the architecture has shifted device performance toward higher sensitivity, higher frequency response, lower noise, and higher gain-bandwidth products.

Copper laser patterning on a flexible substrate using a cost-effective 3D printer

We studied the cost effective direct laser patterning of copper (Cu) on thin polyimide substrates (PI thickness: 12.5-50 µm) using a 405 nm laser module attached to an inexpensive 3D printer. The focal length of the laser was intentionally controlled to reduce defects on patterned Cu and surface damage of PI under predetermined process conditions. The appropriate focal length was examined at various focal distances. Focal distances of - 2.4 mm and 3 mm were found for the shorter focal length (SFL) and longer focal length (LFL), respectively, compared to the actual focal length. This resulted in clean Cu line patterns without line defects. Interestingly, the SFL case had a different Cu growth pattern to that of LFL, indicating that the small difference in the laser incident angle could affect Cu precursor sintering. Cu square patterns had a lower resistivity of 70 μΩ·cm for an LFL after three or four laser scans, while the SFL showed a resistivity below 48 μΩ·cm for a one-time laser scan. The residues of the Cu precursor on PI were easily removed with flowing water and normal surfactants. However, the resistivity of the patterns decreased after cleaning. Among the scan gaps, the Cu square pattern formed at a 70 μm scan gap had the lowest sheet resistance and the least change in resistance from around 4 to 4.4 Ω/ϒ after cleaning. This result implies that the adhesion of the patterned Cu could be improved if the coated Cu precursor was well sintered under the proper process conditions. For the application of this method to bioelectronics, including biosensors, LEDs were connected to the Cu patterns on PI attached to the arm skin and worked well, even when the substrate PI was bent during power connecting.