Density Functional Theory-Based Approach For Dielectric Constant Estimation of Soluble Polyimide Insulators

Evaluation of the insulating properties of polymers, such as the dielectric constant and dissipation factor, is crucial in electronic devices, including field-effect transistors and wireless communication applications. This study applies density functional theory (DFT) to predict the dielectric constant of soluble polyimides (SPIs). Various SPIs containing trifluoromethyl groups in the backbone with different pendant types, numbers, and symmetries are successfully synthesized, and their dielectric constants are evaluated and compared with the DFT-estimated values. Two types of DFT-optimized SPIs, single-chain and stacked-chain models, are used to describe the local geometries of the SPIs. In addition, to reveal the relationship between the molecular structure and dielectric constant, further investigations are conducted by considering the dielectric constant of composing ionic and electronic components. The DFT-estimated static dielectric constant of the single-chain model accurately reproduces the corresponding experimental value with at least 80% accuracy. Our approach provides a rational and accelerated strategy to evaluate polymer insulators for electronic devices based on cost-effective DFT calculations.

Bio-based Low-k Polymers at High Frequency Derived from Anethole: Synthesis and the Relationship between the Structures and the Properties

Bio-based polymers have been widely investigated as sustainable low dielectric (low-k) materials in past decades. Nevertheless, a few of the polymers with excellent comprehensive properties have been achieved to satisfy the requirements of high-frequency communication application. In this paper, two fluorinated monomers (BCB-F and 2BCB-F) have been designed and successfully prepared from biomass anethole. The thermal-cross-linkable benzocyclobutene and polyfluorobenzene groups were introduced in order to obtain low-k polymers with good comprehensive properties. A control monomer C1 was prepared from the estragole, the isomer of anethole, to study intensively the effect of structures on properties. Among the thermally cured polymers, cured BCB-F with higher fluoride content shows a comparable dielectric constant (Dk) of 2.62 and lower dielectric loss (Df) of 1.31 × 10-3 at a frequency of 10 GHz, as well as better hydrophobic properties with a water uptake of 0.18%. Such good hydrophobic properties enable it to maintain the good dielectric properties even after being soaked in boiling water for 96 h. Cured 2BCB-F with bifunctional benzocyclobutene groups displays excellent heat resistance with a high glass transition temperature (Tg) of 408 °C and a low coefficient of thermal expansion (CTE) of 52 ppm/°C in the temperature range 30-300 °C. Cured 2BCB-F also shows good dielectric properties with a Dk of 2.61 and a Df of 2.60 × 10-3 at a frequency of 10 GHz. The good comprehensive properties reveal that the anethole-based polymers are suitable candidates as matrix or encapsulation resins for application in electronics and microelectric fields.

Amorphous Poly (Aryl Ether Ketones) Containing Methylene Groups with Excellent Thermal Resistance, Dielectric Properties and Mechanical Performance

Low-dielectric constant polymers are widely used in various microelectronic materials. With the development of 5G communication technology, there is an urgent need for polymer materials with low dielectric constant at high frequency, good thermal resistance, and mechanical properties. In this study, four novel poly (aryl ether ketone) (PAEK) containing different numbers of methylene groups were synthesized via nucleophilic polycondensation reaction. At 10 GHz, these polymer films exhibit excellent dielectric properties with dielectric constants as low as 2.76. The relationship between the dielectric constant and the number of methylene groups is illustrated by constructing the amorphous accumulation cell model. In addition, methylene groups provided the polymer with favorable mechanical performance, including Young's modulus in the range of 2.17-2.21 GPa, the tensile strength from 82.0 to 88.5 MPa and the elongation at the break achieved 7.94%, respectively. Simultaneously, the polymer maintains good thermal resistance with a glass transition temperature (Tg) reaching 216 °C. The result indicates that the obtained novel PAEK is potentially valuable in the field of high-frequency communications.

Phosphorus-Containing Flame-Retardant Benzocyclobutylene Composites with High Thermal Stability and Low CTE

As a component of printed circuit substrate, copper clad laminate (CCL) needs to meet the performance requirements of heat resistance, flame retardancy, and low coefficient of thermal expansion (CTE), which, respectively, affects the stability, safety, and processability of terminal electronic products. In this paper, benzocyclobutylene (BCB)-functionalized phosphorus-oxygen flame retardant composites were prepared through introducing the BCB groups, and the performance was researched by thermogravimetric analysis, microcombustion calorimetry, and thermomechanical analysis. The research results show that these phosphorus oxide compounds containing BCB groups show good thermal stability and low total heat release (THR) after thermal curing, and the more BCB groups on the phosphorus oxide monomers, the better the thermal stability and flame retardancy of cured resins. The T_d5 and THR of the composite (M3) are as high as 443 °C and 23.1 kJ/g, respectively. In addition, the CTE of M3 is as low as 16.71 ppm/°C. Introduction of BCB groups which can be crosslinked through heat to improve the thermal stability, flame retardancy, and reduced CTE of traditional organophosphorus flame retardant materials. These materials are expected to be good candidates for CCL substrates for electronic circuits.

Impedance and Dielectric Properties of PVC:NH4I Solid Polymer Electrolytes (SPEs): Steps toward the Fabrication of SPEs with High Resistivity

In the present article, a simple technique is provided for the fabrication of a polymer electrolyte system composed of polyvinyl chloride (PVC) and doped with varying content of ammonium iodide (NH₄I) salt using solution-casting methodology. The influences of NH₄I on the structural, electrochemical, and electrical properties of PVC have been investigated using X-ray diffraction, electrochemical impedance spectroscopy (EIS), and dielectric properties. The X-ray study reveals the amorphous nature of the polymer-salt complex. The EIS measurement revealed an ionic conductivity of 5.57 × 10^-10 S/cm for the electrolyte containing 10 wt.% of salt. Our hypothesis is provided, which demonstrated the likelihood of designing highly resistive solid electrolytes using the concept of a polymer electrolyte. Here, the results showed that the resistivity of the studied samples is not dramatically decreased with increasing NH₄I. Bode plots distinguish the decrease in resistance or impedance with increasing salt contents. Dielectric measurements revealed a decrease in the dielectric constant with the increase of NH₄I content in the PVC polymer. The relaxation time and dielectric properties of the electrolytes confirmed their non-Debye type behavior. This pattern has been validated by the existence of an incomplete semicircle in the Argand plot. Insulation materials with low ε_r have found widespread applications in electronic devices due to the reduction in delay, power dissipation, and crosstalk. In addition, an investigation of real and imaginary parts of electric modulus leads to the minimized electrode polarization being reached.

Utilizing the Diffusion of Fluorinated Polymers to Modify the Semiconductor/Dielectric Interface in Solution-Processed Conjugated Polymer Field-Effect Transistors

It has been demonstrated that tailoring the properties of semiconductor/dielectric interfaces with fluorinated polymers yields better performance for organic field-effect transistors (OFETs). However, it remains a challenge to fabricate bottom-gate OFET devices on fluorinated dielectrics using solution-processed methods due to the poor wettability of fluorinated dielectrics. Here, we utilized the diffusion of fluorinated poly(methyl methacrylate) (PMMA) to construct the fluorine-rich semiconductor/dielectric interface to achieve the fabrication of bottom-gate OFETs with a solution-processed poly(3-hexylthiophene) (P3HT) semiconductor layer. The consequences indicate that the fluorinated dielectrics can effectively decrease the charge traps density at the semiconductor/dielectric interface and promote the edge-on orientation of P3HT on the dielectric surface. Thus, the devices based on fluorinated PMMA modified dielectrics exhibit higher carrier mobility and electrical stability than those of the fluorine-free devices. Our investigation affords a new strategy for the design and interface optimization of devices, which may further advance the performance of OFET devices.

Preparation and Characterization of Electrospun Fluoro-Containing Poly(imide-benzoxazole) Nano-Fibrous Membranes with Low Dielectric Constants and High Thermal Stability

The rapid development of advanced high-frequency mobile communication techniques has advanced urgent requirements for polymer materials with high-temperature resistance and good dielectric properties, including low dielectric constants (low-Dk) and low dielectric dissipation factors (low-Df). The relatively poor dielectric properties of common polymer candidates, such as standard polyimides (PIs) greatly limited their application in high-frequency areas. In the current work, benzoxazole units were successfully incorporated into the molecular structures of the fluoro-containing PIs to afford the poly(imide-benzoxazole) (PIBO) nano-fibrous membranes (NFMs) via electrospinning fabrication. First, the PI NFMs were prepared by the electrospinning procedure from organo-soluble PI resins derived from 2,2'-bis(3,4-dicarboxy-phenyl)hexafluoropropane dianhydride (6FDA) and aromatic diamines containing ortho-hydroxy-substituted benzamide units, including 2,2-bis[3-(4-aminobenzamide)-4-hydroxylphenyl]hexafluoropropane (p6FAHP) and 2,2-bis[3-(3-aminobenzamide)-4-hydroxyphenyl]hexafluoropropane (m6FAHP). Then, the PI NFMs were thermally dehydrated at 350 °C in nitrogen to afford the PIBO NFMs. The average fiber diameters (dav) for the PIBO NFMs were 1225 nm for PIBO-1 derived from PI-1 (6FDA-p6FAHP) precursor and 816 nm for PIBO-2 derived from PI-2 (6FDA-m6FAHP). The derived PIBO NFMs showed good thermal stability with the glass transition temperatures (Tgs) over 310 °C and the 5% weight loss temperatures (T5%) higher than 500 °C in nitrogen. The PIBO NFMs showed low dielectric features with the Dk value of 1.64 for PIBO-1 and 1.82 for PIBO-2 at the frequency of 1 MHz, respectively. The Df values were in the range of 0.010~0.018 for the PIBO NFMs.

Heterogeneous photocatalysis in flow chemical reactors

The synergy between photocatalysis and continuous flow chemical reactors has shifted the paradigms of photochemistry, opening new avenues of research with safer and scalable processes that can be readily implemented in academia and industry. Current state-of-the-art photocatalysts are homogeneous transition metal complexes that have favourable photophysical properties, wide electrochemical redox potentials, and photostability. However, these photocatalysts present serious drawbacks, such as toxicity, limited availability, and the overall cost of rare transition metal elements. This reduces their long-term viability, especially at an industrial scale. Heterogeneous photocatalysts (HPCats) are an attractive alternative, as the requirement for the separation and purification is largely removed, but typically at the cost of efficiency. Flow chemical reactors can, to a large extent, mitigate the loss in efficiency through reactor designs that enhance mass transport and irradiation. Herein, we review some important developments of heterogeneous photocatalytic materials and their application in flow reactors for sustainable organic synthesis. Further, the application of continuous flow heterogeneous photocatalysis in environmental remediation is briefly discussed to present some interesting reactor designs that could be implemented to enhance organic synthesis.

Preparation and Properties of Novel Cross-Linked Fluorinated Poly(aryl ether) with Low Dielectric Constant and High Thermal Stability

Fluorinated poly(aryl ether)s (FPAEs) have attracted much attention due to their high thermal stability, excellent mechanical strength, and low dielectric constant. High-molecular-weight fluorinated poly(aryl ether) containing phenylethynyl (FPAE-PE) is successfully synthesized by nucleophilic substitution between 3-ethynylphenol and FPAE. The cross-linked fluorinated poly(aryl ether) (C-FPAE-PE) is prepared by thermal treatment of FPAE-PE at 300 °C. The thermal stability, dynamic thermomechanical property, and dielectric performance of C-FPAE-PE are systematically studied. C-FPAE-PE has excellent heat resistance with 5% weight loss temperature (T_d5% ) at 490 °C in air and high thermomechanical properties with storage modulus retention of 50% at 215 °C. C-FPAE-PE displays low and steady dielectric constant of 2.4 and dielectric loss of 0.004 at 215 °C, exhibiting potential applications in the field of microelectronics, communication technology, and energy storage as high-temperature low dielectric materials.

Recent Progress in Aromatic Polyimide Dielectrics for Organic Electronic Devices and Circuits

Polymeric dielectrics play a key role in the realization of flexible organic electronics, especially for the fabrication of scalable device arrays and integrated circuits. Among a wide variety of polymeric dielectric materials, aromatic polyimides (PIs) are flexible, lightweight, and strongly resistant to high-temperature processing and corrosive etchants and, therefore, have become promising candidates as gate dielectrics with good feasibility in manufacturing organic electronic devices. More significantly, the characteristics of PIs can be conveniently modulated by the design of their chemical structures. Herein, from the perspective of structure optimization and interface engineering, a brief overview of recent progress in PI-based dielectrics for organic electronic devices and circuits is provided. Also, an outlook of future research directions and challenges for polyimide dielectric materials is presented.

Polyitaconates: A New Family of "All-Polymer" Dielectrics

This work presents the synthesis of new poly(itaconate)s containing sulfone or nitrile pendant groups through conventional radical polymerization together with their characterization and comparison with poly(methacrylate)s containing identical groups. Structural and thermal characterization has been carried out in terms of Fourier transform infrared spectroscopy, differential scanning calorimetry, nuclear magnetic resonance, and thermogravimetric analysis. Characterized by broad band dielectric spectroscopy (BDS), all polymers showed dielectric constant values between 7 and 10 (at 25 °C and 1 kHz) and relative low dielectric loss values (≈0.02). BDS measurements showed, for all the polymers analyzed, notorious subglass transitions even at temperatures below -100 °C, resulting in a broad temperature interval in which these polymers exhibit high dielectric constant and could work without high losses. Therefore, these materials seem to be good candidates for dielectric applications such as energy storage, among others.

Phosphinated Poly(aryl ether)s with Acetic/Phenyl Methacrylic/Vinylbenzyl Ether Moieties for High-T g and Low-Dielectric Thermosets

To achieve insulating materials with a low-dielectric characteristic for high-frequency communication applications, three phosphinated poly(aryl ether)s: P1-act (with acetic moiety), P1-mma (with phenyl methacrylic moiety), and P1-vbe (with vinylbenzyl ether moiety) were modified from a phenol-functionalized phosphinated poly(aryl ether) (P1). P1-act and P1-mma, both with active ester linkages (Ph-O-(C=O)-), were reacted with three commercial epoxy resins (diglycidyl ether of bisphenol A, HP7200, and cresol novolac epoxy) to obtain secondary hydroxyl-free epoxy thermosets. Because of the secondary hydroxyl-free structure, epoxy thermosets cured by P1-act and P1-mma show an 11-15% reduction in dielectric constant than those cured by P1. P1-vbe, with reactive vinylbenzyl ether moieties, was self-cured to a high-performance thermoset with a T _g value as high as 302 °C and a dielectric constant as low as 2.64U. High-T _g and low-dielectric thermosets have been developed in this work.

Using Dicyclopentadiene-Derived Polyarylates as Epoxy Curing Agents To Achieve High T g and Low Dielectric Epoxy Thermosets

To achieve high-T _g and low-dielectric epoxy thermosets, four dicyclopentadiene-derived polyarylates (26-P, 26-M, 236-P, and 236-M) were prepared from 2,6-dimethyl (or 2,3,6-trimethyl) phenol-dicyclopentadiene adduct with terephthaloyl (or isophthaloyl) chloride by high-temperature solution polymerization. The resulting polyarylates, exhibiting active ester linkages (Ph-O-(C=O)-) are found to be reactive toward a commercial dicyclopentadiene phenol epoxy (HP7200) in the presence of some lone-pair electron-containing compounds. Five compounds including 4-dimethylaminopyridine (DMAP), imidazole, 2-methylimidazole, triphenylphosphine, and triphenylimidazole have been evaluated as a catalyst for the curing reactions. We found that DMAP, with the smallest pK _b among them, is the best catalyst according to differential scanning calorimetry, infrared, and thermal analyses. The thermal and dielectric properties of the polyarylate/HP7200 thermosets are evaluated. We found that they exhibit a high T _g characteristic (e.g., T _g is 238 °C for DMAP-catalyzed, 236-P/HP7200 thermoset). Furthermore, because of the hydrophobic methyl and cycloaliphatic moieties, and the secondary hydroxyl-free structure, polyarylate/HP7200 thermosets show a relative low-dielectric constant of around 2.75 U. The detailed structure-properties relationship is discussed in this work.

Low-Dissipation Thermosets Derived from Oligo(2,6-Dimethyl Phenylene Oxide)-Containing Benzoxazines

Poly(2,6-dimethyl phenyl oxide) (PPO) is known for its low dissipation factor. To achieve insulating materials with low dissipation factors for high-frequency communication applications, a telechelic oligomer-type benzoxazine (P-APPO) and a main-chain type benzoxazine polymer (BPA-APPO) were prepared from an amine end-capped oligo (2,6-dimethyl phenylene oxide) (APPO). The APPO was prepared from a nucleophilic substitution of a phenol-end capped oligo (2,6-dimethyl phenylene oxide) (a commercial product, SA 90) with fluoronitrobenzene, and followed by catalytic hydrogenation. After self-curing or curing with a dicyclopentadiene-phenol epoxy (HP 7200), thermosets with high-Tg and low-dissipation factor can be achieved. Furthermore, the resulting epoxy thermosets show better thermal and dielectric properties than those of epoxy thermoset cured from its precursor SA90, demonstrating it is a successful modification in simultaneously enhancing the thermal and dielectric properties.

Atmospheric Pressure Plasma Jet-Assisted Synthesis of Zeolite-Based Low-k Thin Films

Zeolites are ideal low-dielectric constant (low-k) materials. This paper reports on a novel plasma-assisted approach to the synthesis of low-k thin films comprising pure-silica zeolite MFI. The proposed method involves treating the aged solution using an atmospheric pressure plasma jet (APPJ). The high reactivity of the resulting nitrogen plasma helps to produce zeolite crystals with high crystallinity and uniform crystal size distribution. The APPJ treatment also remarkably reduces the time for hydrothermal reaction. The zeolite MFI suspensions synthesized with the APPJ treatment are used for the wet deposition to form thin films. The deposited zeolite thin films possessed dense morphology and high crystallinity, which overcome the trade-off between crystallinity and film quality. Zeolite thin films synthesized using the proposed APPJ treatment achieve low leakage current (on the order of 10^-8 A/cm²) and high Young's modulus (12 GPa), outperforming the control sample synthesized without plasma treatment. The dielectric constant of our zeolite thin films was as low as 1.41. The overall performance of the low-k thin films synthesized with the APPJ treatment far exceed existing low-k films comprising pure-silica MFI.

Syndiotactic Polystyrene/Hybrid Silica Spheres of POSS Siloxane Composites Exhibiting Ultralow Dielectric Constant

Homogeneously dispersed hybrid silica/syndiotactic polystyrene composites were investigated for low-κ dielectric applications. The composites were prepared by a solution blending method, and their microstructures were analyzed by SEM, TEM, and AFM. Crystallization and phase transformation behavior of sPS were investigated using differential scanning calorimetry and wide-angle X-ray diffraction. These composites exhibited improved thermal stability and reduced thermal expansion coefficients. Promising dielectric properties were observed for the composites in the microwave frequency region with a dielectric constant (κ = 1.95) and loss (tan δ = 10(-4)) at 5 GHz.