Tuning the doping type and level of graphene with different gold configurations

Metal-Graphene Hybrid Terahertz Metasurfaces for Circulating Tumor DNA Detection Based on Dual Signal Amplification

Terahertz (THz) spectroscopy has impressive capability for label-free biosensing, but its utility in clinical laboratories is rarely reported due to often unsatisfactory detection performances. Here, we fabricated metal-graphene hybrid THz metasurfaces (MSs) for the sensitive and enzyme-free detection of circulating tumor DNA (ctDNA) in pancreatic cancer plasma samples. The feasibility and mechanism of the enhanced effects of a graphene bridge across the MS and amplified by gold nanoparticles (AuNPs) were investigated experimentally and theoretically. The AuNPs serve to boost charge injection in the graphene film and result in producing a remarkable change in the graded transmissivity index to THz radiation of the MS resonators. Assay design utilizes this feature and a cascade hybridization chain reaction initiated on magnetic beads in the presence of target ctDNA to achieve dual signal amplification (chemical and optical). In addition to demonstrating subfemtomolar detection sensitivity and single-nucleotide mismatch selectivity, the proposed method showed remarkable capability to discriminate between pancreatic cancer patients and healthy individuals by recognizing and quantifying targeted ctDNAs. The introduction of graphene to the metasurface produces an improved sensitivity of 2 orders of magnitude for ctDNA detection. This is the first study to report the combined application of graphene and AuNPs in biosensing by THz spectroscopic resonators and provides a combined identification scheme to detect and discriminate different biological analytes, including nucleic acids, proteins, and various biomarkers.

Gold-Deposited Graphene Nanosheets for Self-Cleaning Graphene Surface-Enhanced Raman Spectroscopy with Superior Charge-Transfer Contribution

The interaction of graphene with metals initiates charge-transfer interaction-induced chemical enhancements, which critically depend on the doping effect from deposited metallic configurations. In this paper, we have explored the gold nanoparticle-decorated monolayer graphene nanosheets for the large graphene-induced Raman enhancement of adsorbed analytes, indicating the surface-enhanced Raman spectroscopy (SERS) capabilities of metal-doped graphene (G-SERS). Here, the systematically sputtered Au thickness optimization procedure revealed noticeable modifications in the graphene Raman spectra and photoluminescence (PL) background quenching, which indicated favorable charge transfer through n-type doping of chemical vapor deposition-grown graphene nanosheets. The highly consistent, individually distributed morphology of the gold nanoislands over graphene nanosheets depicted a reproducibly uniform G-SERS signal with excellent relative standard deviation values (<5%), resulting in the strongest Raman intensity enhancement factors of ∼108 (MB) (methylene blue) and 107 (DPA) (2,6-pyridinedicarboxylic acid) composed of the weakest PL background. The combined charge-transfer-induced chemical enhancement and electromagnetic enhancement from individual Au nanoislands result in a lowering of detectability down to 10-16 M (MB) and 10-11 M (DPA) concentrations with efficient time-dependent signal stability. Additionally, the GAu demonstrated its effective (∼94.4%) photocatalytic degradation capabilities by decomposing MB dye molecules from a concentration of 1 μM to 2.52 fM within 60 min. Therefore, the prominent charge-transfer contribution through controlled Au decoration over graphene nanosheets provides a potential strategy for fabricating superior SERS sensors and photocatalysts exhibiting adequate signal consistency, stability, and photodegradation efficiency through overcoming the limitations of the traditional sensing platforms.

MoRe Electrodes with 10 nm Nanogaps for Electrical Contact to Atomically Precise Graphene Nanoribbons

Atomically precise graphene nanoribbons (GNRs) are predicted to exhibit exceptional edge-related properties, such as localized edge states, spin polarization, and half-metallicity. However, the absence of low-resistance nanoscale electrical contacts to the GNRs hinders harnessing their properties in field-effect transistors. In this paper, we make electrical contact with nine-atom-wide armchair GNRs using superconducting alloy MoRe as well as Pd (as a reference), which are two of the metals providing low-resistance contacts to carbon nanotubes. We take a step toward contacting a single GNR by fabricating electrodes with needlelike geometry, with about 20 nm tip diameter and 10 nm separation. To preserve the nanoscale geometry of the contacts, we develop a PMMA-assisted technique to transfer the GNRs onto the prepatterned electrodes. Our device characterizations as a function of bias voltage and temperature show thermally activated gate-tunable conductance in GNR-MoRe-based transistors.

Investigating the thermal transport in gold decorated graphene by opto-thermal Raman technique

We report a systematic study on the thermal transport properties of gold nanoparticles (Au NPs) decorated single-layer graphene on a SiO₂/Si substrate by the opto-thermal Raman technique. Our results, with moderate Au NPs coverage (<10%), demonstrate an enhancement in the thermal conductivity of graphene by ∼55% from its pristine value and a decrement in the interface conductance by a factor of 1.5. A detailed analysis of our results shows the importance of the photo-thermal conversion efficiency of Au NPs, plasmon-phonon coupling and lattice modifications in the graphene developed after gold nanoparticles deposition in enhancing the thermal conductivity and reducing the interface thermal conductance of the system. Our study paves way for a better understanding of the thermal management in such hybrid systems, which are envisioned as excellent candidates for optoelectronics and photonics applications.

Reduced Turn-On Voltage and Boosted Mobility in Monolayer WS2 Transistors by Mild Ar+ Plasma Treatment

Monolayer two-dimensional transition-metal dichalcogenides, such as tungsten disulfide (WS₂), are regarded as promising candidates for optoelectronic and electronic applications. Although theoretical calculations have predicted outstanding electronic properties of WS₂, the performance of WS₂-based electronic devices is still limited by the relatively high Schottky barrier and low carrier mobility. In this work, low-energy argon (Ar⁺) plasma treatment was used as a nondestructive preconditioning technique to tailor the electrical properties of the WS₂ monolayer grown by chemical vapor deposition. Photoluminescence and Raman spectroscopy were used to monitor the modified optical properties of WS₂ with increasing plasma treatment time. An improved electrical conductivity was observed after a short-time plasma treatment. The physical mechanism was further revealed by a comparative study between top-electrode and bottom-electrode devices and simulation based on the density functional theory. It is concluded that mild Ar⁺ plasma treatment can effectively lower the Schottky barrier height and the effective mass of carriers, which reduces the turn-on voltage and enhances the mobility, respectively. However, if the processing time is too long, the WS₂ lattice structure will be destroyed. This work has provided an effective method for manipulating the Schottky barrier and mobility of monolayer WS₂ transistors and paves the way for developing high-performance electronic devices based on 2D semiconductors.

Photo-organometallic, Nanoparticle Nucleation on Graphene for Cascaded Doping

Controlling the doping levels in graphene by modifying the electric potential of interfaced nanostructures is important to understand "cascaded-doping"-based applications of graphene. However, graphene does not have active sites for nanoparticle attachment, and covalently adding functional groups on graphene disrupts its planar sp²-hybridization, affecting its cascaded doping. Here we show a hexahepto (η⁶) photo-organometallic chemistry to interface nanoparticles on graphene while retaining the sp²-hybridized state of carbon atoms. For testing cascaded doping with ethanol interaction, transition metal oxide nanoparticles (TMONs) (Cr₂O₃/CrO₃, MoO₃, and WO₃) are attached on graphene. Here, the transition metal forms six σ-bonds and π-back-bonds with the benzenoid rings of graphene, while its opposite face binds to three carbonyl groups, which enable nucleation and growth of TMONs. With a radius size ranging from 50 to 100 nm, the TMONs downshift the Fermi level of graphene (-250 mV; p-doping) via interfacial charge transfer. This is consistent with the blue shift of graphene's G and 2D Raman modes with a hole density of 3.78 × 10¹² cm^-2. With susceptibility to ethanol, Cr_xO₃ nanoparticles on graphene enable cascaded doping from ethanol that adsorbs on Cr_xO₃, leading to doping of graphene to increase the electrical resistance of the TMONs-graphene hybrid. This nanoparticle-on-graphene construct can have several applications in gas/vapor sensing, electrochemical catalysis, and high-energy-density supercapacitors.

Charge Storage Mechanisms of Single-Layer Graphene in Ionic Liquid

Graphene-based carbon materials are promising candidates for electrical double-layer (EDL) capacitors, and there is considerable interest in understanding the structure and properties of the graphene/electrolyte interface. Here, electrochemical impedance spectroscopy (EIS) and electrochemical quartz crystal microbalance (EQCM) are used to characterize the ion fluxes and adsorption on single-layer graphene in neat ionic liquid (EMI-TFSI) electrolyte. It is found that a positively charged ion-species desorption and ion reorganization dominate the double-layer charging during positive and negative polarizations, respectively, leading to the increase in EDL capacitance with applied potential.

Synthesis of Wafer-Scale Monolayer WS2 Crystals toward the Application in Integrated Electronic Devices

Two-dimensional transition-metal dichalcogenides (TMDCs) possess unique electronic and optical properties, which open up a new opportunity for atomically thin optoelectronic devices. Synthesizing large-scale monolayer TMDCs on the SiO₂/Si substrate is crucial for practical applications, however, it remains a big challenge. In this work, a method which combines chemical vapor deposition (CVD) and thermal evaporation was employed to grow monolayer tungsten disulfide (WS₂) crystals. Through controlling the density and the distribution of W precursors, a wafer-scale continuous uniform WS₂ film was achieved, with the structural and spectral characterizations confirming a monolayer configuration and a high crystalline quality. Wafer-scale field-effect transistor arrays based on the monolayer WS₂ were fabricated. The devices show superior electrical performances, and the maximal mobility is almost 1 order of magnitude higher than those of CVD-grown large-scale TMDC devices reported so far.

Dynamic strain in gold nanoparticle supported graphene induced by focused laser irradiation

Graphene on noble-metal nanostructures constitutes an attractive nanocomposite with possible applications in sensors or energy conversion. In this work we study the properties of hybrid graphene/gold nanoparticle structures by Raman spectroscopy and scanning probe methods. The nanoparticles (NPs) were prepared by local annealing of gold thin films using a focused laser beam. The method resulted in a patterned surface, with NPs formed at arbitrarily chosen microscale areas. Graphene grown by chemical vapour deposition was transferred onto the prepared, closely spaced gold NPs. While we found that successive higher intensity (6 mW) laser irradiation increased gradually the doping and the defect concentration in SiO2 supported graphene, the same irradiation procedure did not induce such irreversible effects in the graphene supported by gold NPs. Moreover, the laser irradiation induced a dynamic hydrostatic strain in the graphene on Au NPs, which turned out to be completely reversible. These results can have implications in the development of graphene/plasmonic nanoparticle based high temperature sensors operating in dynamic regimes.

Preparation of carbon-based AuAg alloy nanoparticles by using the heterometallic [Au4Ag4] cluster for efficient oxidative coupling of anilines

We herein report the preparation of unique heteroatom-doped and carbon-based AuAg alloy nanoparticles (NPs) via the pyrolysis of a structurally defined octanuclear heterometallic Au(i)-Ag(i) cluster [Au4Ag4(Dppy)4(Tab)4(MeCN)4](PF6)8 (2, Dppy = diphenylphosphine-2-pyridine and Tab = 4-(trimethylammonio)benzenethiolate). This cluster-precursor approach exerts a fine control over the spatial arrangement, size and uniformity of the AuAg alloy NPs as well as the doped heteroatoms (P, N, F and S). The optimized material prepared at 450 °C efficiently catalyzes the oxidative coupling of anilines to yield azobenzenes under mild conditions.

Photosensitive Graphene P-N Junction Transistors and Ternary Inverters

We investigate the electric transport in a graphene-organic dye hybrid and the formation of p-n junctions. In the conventional approach, graphene p-n junctions are produced by using multiple electrostatic gates or local chemical doping, which produce different types of carriers in graphene. Instead of using multiple gates or typical chemical doping, a different approach to fabricate p-n junctions is proposed. The approach is based on optical gating of photosensitive dye molecules; this method can produce a well-defined sharp junction. The potential difference in the proposed p-n junction can be controlled by varying the optical power of incident light. A theoretical calculation based on the effective medium theory is performed to thoroughly explain the experimental data. The characteristic transport behavior of the photosensitive graphene p-n junction opens new possibilities for graphene-based devices, and we use the results to fabricate ternary inverters. Our strategy of building a simple hybrid p-n junction can further offer many opportunities in the near future of tuning it for other optoelectronic functionalities.

The effect of graphene on surface plasmon resonance of metal nanoparticles

Two transparent graphene–metal nanoparticle (NP) hybrid schemes, namely Au NPs covered by graphene layers and Au NPs encapsulated by graphene layers, are presented and the effect of graphene on the localized surface plasmon resonance of metal NPs is systematically investigated.

Width-Dependent Band Gap in Armchair Graphene Nanoribbons Reveals Fermi Level Pinning on Au(111)

We report the energy level alignment evolution of valence and conduction bands of armchair-oriented graphene nanoribbons (aGNR) as their band gap shrinks with increasing width. We use 4,4″-dibromo-para-terphenyl as the molecular precursor on Au(111) to form extended poly-para-phenylene nanowires, which can subsequently be fused sideways to form atomically precise aGNRs of varying widths. We measure the frontier bands by means of scanning tunneling spectroscopy, corroborating that the nanoribbon's band gap is inversely proportional to their width. Interestingly, valence bands are found to show Fermi level pinning as the band gap decreases below a threshold value around 1.7 eV. Such behavior is of critical importance to understand the properties of potential contacts in GNR-based devices. Our measurements further reveal a particularly interesting system for studying Fermi level pinning by modifying an adsorbate's band gap while maintaining an almost unchanged interface chemistry defined by substrate and adsorbate.

Electronic transport properties of graphene doped by gallium

In this work we present the effect of low dose gallium (Ga) deposition (<4 ML) performed in UHV (10^-7 Pa) on the electronic doping and charge carrier scattering in graphene grown by chemical vapor deposition. In situ graphene transport measurements performed with a graphene field-effect transistor structure show that at low Ga coverages a graphene layer tends to be strongly n-doped with an efficiency of 0.64 electrons per one Ga atom, while the further deposition and Ga cluster formation results in removing electrons from graphene (less n-doping). The experimental results are supported by the density functional theory calculations and explained as a consequence of distinct interaction between graphene and Ga atoms in case of individual atoms, layers, or clusters.

Decorating graphene with size-selected few-atom clusters: a novel approach to investigate graphene-adparticle interactions

We investigated the interaction between size-selected Au₂ and Au₃ clusters and graphene. Hereto preformed clusters are deposited on graphene field-effect transistors, a novel approach which offers a high control over the number of atoms per cluster, the deposition energy and the deposited density. The induced p-doping and charge carrier scattering indicate that a major part of the deposited clusters remains on the graphene flake as either individual or sub-nm coalesced entities. This is independently confirmed by scanning electron microscopy on the same devices after current annealing. Our novel approach provides perspectives for the electronic sensing of metallic clusters down to their atom-by-atom size-specific properties, and exploiting the tunability of clusters for tailoring desired properties in graphene.

Scalable Production of Sensor Arrays Based on High-Mobility Hybrid Graphene Field Effect Transistors

We have developed a scalable fabrication process for the production of DNA biosensors based on gold nanoparticle-decorated graphene field effect transistors (AuNP-Gr-FETs), where monodisperse AuNPs are created through physical vapor deposition followed by thermal annealing. The FETs are created in a four-probe configuration, using an optimized bilayer photolithography process that yields chemically clean devices, as confirmed by XPS and AFM, with high carrier mobility (3590 ± 710 cm²/V·s) and low unintended doping (Dirac voltages of 9.4 ± 2.7 V). The AuNP-Gr-FETs were readily functionalized with thiolated probe DNA to yield DNA biosensors with a detection limit of 1 nM and high specificity against noncomplementary DNA. Our work provides a pathway toward the scalable fabrication of high-performance AuNP-Gr-FET devices for label-free nucleic acid testing in a realistic clinical setting.

Rashba Interaction and Local Magnetic Moments in a Graphene-BN Heterostructure Intercalated with Au

We intercalate a van der Waals heterostructure of graphene and hexagonal boron nitride with Au, by encapsulation, and show that the Au at the interface is two dimensional. Charge transfer upon current annealing indicates the redistribution of the Au and induces splitting of the graphene band structure. The effect of an in-plane magnetic field confirms that the splitting is due to spin splitting and that the spin polarization is in the plane, characteristic of a Rashba interaction with a magnitude of approximately 25 meV. Consistent with the presence of an intrinsic interfacial electric field we show that the splitting can be enhanced by an applied displacement field in dual gated samples. A giant negative magnetoresistance, up to 75%, and a field induced anomalous Hall effect at magnetic fields <1  T are observed. These demonstrate that the hybridized Au has a magnetic moment and suggests the proximity to the formation of a collective magnetic phase. These effects persist close to room temperature.

Effects of thermally-induced changes of Cu grains on domain structure and electrical performance of CVD-grown graphene

During the chemical vapor deposition (CVD) growth of graphene on Cu foils, evaporation of Cu and changes in the dimensions of Cu grains in directions both parallel and perpendicular to the foils are induced by thermal effects. Such changes in the Cu foil could subsequently change the shape and distribution of individual graphene domains grown on the foil surface, and thus influence the domain structure and electrical properties of the resulting graphene films. Here, a slower cooling rate is used after the CVD process, and the graphene films are found to have an improved electrical performance, which is considered to be associated with the Cu surface evaporation and grain structure changes in the Cu substrate.

Enhanced electron emission of directly transferred few-layer graphene decorated with gold nanoparticles

We demonstrate the possibility for integrating field emitters with two-dimensional (2D) graphene for directly transferred vacuum nanoelectronics.

Electronic transport properties of Ir-decorated graphene

Graphene decorated with 5d transitional metal atoms is predicted to exhibit many intriguing properties; for example iridium adatoms are proposed to induce a substantial topological gap in graphene. We extensively investigated the conductivity of single-layer graphene decorated with iridium deposited in ultra-high vacuum at low temperature (7 K) as a function of Ir concentration, carrier density, temperature, and annealing conditions. Our results are consistent with the formation of Ir clusters of ~100 atoms at low temperature, with each cluster donating a single electronic charge to graphene. Annealing graphene increases the cluster size, reducing the doping and increasing the mobility. We do not observe any sign of an energy gap induced by spin-orbit coupling, possibly due to the clustering of Ir.

Insights into the effects of metal nanostructuring and oxidation on the work function and charge transfer of metal/graphene hybrids

Graphene/metal heterojunctions are ubiquitous in graphene-based devices and, therefore, have attracted increasing interest of researchers. Indeed, the literature on the field reports apparently contradictory results about the effect of a metal on graphene doping. Here, we elucidate the effect of metal nanostructuring and oxidation on the metal work function (WF) and, consequently, on the charge transfer and doping of graphene/metal hybrids. We show that nanostructuring and oxidation of metals provide a valid support to frame WF and doping variation in metal/graphene hybrids. Chemical vapour-deposited monolayer graphene has been transferred onto a variety of metal surfaces, including d-metals, such as Ag, Au, and Cu, and sp-metals, such as Al and Ga, configured as thin films or nanoparticle (NP) ensembles of various average sizes. The metal-induced charge transfer and the doping of graphene have been investigated using Kelvin probe force microscopy (KPFM), and corroborated by Raman spectroscopy and plasmonic ellipsometric spectroscopy. We show that when the appropriate WF of the metal is considered, without any assumption, taking into account WF variations by nanostructure and/or oxidation, a linear relationship between the metal WF and the doping of graphene is found. Specifically, for all metals, nanostructuring lowers the metal WF. In addition, using gold as an example, a critical metal nanoparticle size is found at which the direction of charge transfer, and consequently graphene doping, is inverted.

On-demand doping of graphene by stamping with a chemically functionalized rubber lens

A customized graphene doping method was developed involving stamping using a chemically functionalized rubber lens as a novel design strategy for fabricating advanced two-dimensional (2D) materials-based electronic devices. Our stamping strategy enables deterministic control over the doping level and the spatial pattern of the doping on graphene. The dopants introduced onto graphene were locally and continuously controlled by directly stamping dopants using a chemically functionalized hemispherical rubber lens onto the graphene. The rubber lens was functionalized using two different dopants: poly(ethylene imine) to achieve n-type doping and bis(trifluoromethanesulfonyl)amine to achieve p-type doping. The graphene doping was systematically controlled by varying both the contact area (between the rubber lens and the graphene) and the contact time. Graphene doping using a stamp with a chemically functionalized rubber lens was confirmed by both Raman spectroscopy and charge transport measurements. We theoretically modeled the conductance properties of the spatially doped graphene using the effective medium theory and found excellent agreement with the experimental results. Finally, complementary inverters were successfully demonstrated by connecting n-type and p-type graphene transistors fabricated using the stamping doping method. We believe that this versatile doping method for controlling charge transport in graphene will further promote graphene electronic device applications. The doping method introduced in this paper may also be applied to other emergent 2D materials to tightly modulate the electrical properties in advanced electronic devices.

The structure and properties of graphene on gold nanoparticles

Graphene covered metal nanoparticles constitute a novel type of hybrid material, which provides a unique platform to study plasmonic effects, surface-enhanced Raman scattering (SERS), and metal-graphene interactions at the nanoscale. Such a hybrid material is fabricated by transferring graphene grown by chemical vapor deposition onto closely spaced gold nanoparticles produced on a silica wafer. The morphology and physical properties of nanoparticle-supported graphene are investigated by atomic force microscopy, optical reflectance spectroscopy, scanning tunneling microscopy and spectroscopy (STM/STS), and confocal Raman spectroscopy. This study shows that the graphene Raman peaks are enhanced by a factor which depends on the excitation wavelength, in accordance with the surface plasmon resonance of the gold nanoparticles, and also on the graphene-nanoparticle distance which is tuned by annealing at moderate temperatures. The observed SERS activity is correlated with the nanoscale corrugation of graphene. STM and STS measurements show that the local density of electronic states in graphene is modulated by the underlying gold nanoparticles.

Demonstrating the capability of the high-performance plasmonic gallium-graphene couple

Metal nanoparticle (NP)-graphene multifunctional platforms are of great interest for exploring strong light-graphene interactions enhanced by plasmons and for improving performance of numerous applications, such as sensing and catalysis. These platforms can also be used to carry out fundamental studies on charge transfer, and the findings can lead to new strategies for doping graphene. There have been a large number of studies on noble metal Au-graphene and Ag-graphene platforms that have shown their potential for a number of applications. These studies have also highlighted some drawbacks that must be overcome to realize high performance. Here we demonstrate the promise of plasmonic gallium (Ga) nanoparticle (NP)-graphene hybrids as a means of modulating the graphene Fermi level, creating tunable localized surface plasmon resonances and, consequently, creating high-performance surface-enhanced Raman scattering (SERS) platforms. Four prominent peculiarities of Ga, differentiating it from the commonly used noble (gold and silver) metals are (1) the ability to create tunable (from the UV to the visible) plasmonic platforms, (2) its chemical stability leading to long-lifetime plasmonic platforms, (3) its ability to n-type dope graphene, and (4) its weak chemical interaction with graphene, which preserves the integrity of the graphene lattice. As a result of these factors, a Ga NP-enhanced graphene Raman intensity effect has been observed. To further elucidate the roles of the electromagnetic enhancement (or plasmonic) mechanism in relation to electron transfer, we compare graphene-on-Ga NP and Ga NP-on-graphene SERS platforms using the cationic dye rhodamine B, a drug model biomolecule, as the analyte.

Crystal structure evolution of individual graphene islands during CVD growth on copper foil

Single-crystal percentage of graphene islands on Cu foil is associated with island sizes and shapes. In polycrystalline islands, certain grain boundary types are favored. There is no obvious relation between the number of lobes and grain orientations. An observed structure evolution and surface disorder of Cu grains can be possible factors for the formation of grain boundaries within graphene islands.

Growth mechanism and controlled synthesis of AB-stacked bilayer graphene on Cu-Ni alloy foils

Strongly coupled bilayer graphene (i.e., AB stacked) grows particularly well on commercial "90-10" Cu-Ni alloy foil. However, the mechanism of growth of bilayer graphene on Cu-Ni alloy foils had not been discovered. Carbon isotope labeling (sequential dosing of (12)CH(4) and (13)CH(4)) and Raman spectroscopic mapping were used to study the growth process. It was learned that the mechanism of graphene growth on Cu-Ni alloy is by precipitation at the surface from carbon dissolved in the bulk of the alloy foil that diffuses to the surface. The growth parameters were varied to investigate their effect on graphene coverage and isotopic composition. It was found that higher temperature, longer exposure time, higher rate of bulk diffusion for (12)C vs(13)C, and slower cooling rate all produced higher graphene coverage on this type of Cu-Ni alloy foil. The isotopic composition of the graphene layer(s) could also be modified by adjusting the cooling rate. In addition, large-area, AB-stacked bilayer graphene transferrable onto Si/SiO(2) substrates was controllably synthesized.