Flexible Photodetectors Based on Novel Functional Materials

Strong Covalent Coupling in Vertically Layered SnSe2/PTAA Heterojunctions Enabled High Performance Inorganic-Organic Hybrid Photodetectors

Controllable large-scale integration of two-dimensional (2D) materials with organic semiconductors and the realization of strong coupling between them still remain challenging. Herein, we demonstrate a wafer-scale, vertically layered SnSe2/PTAA heterojunction array with high light-trapping ability via a low-temperature molecular beam epitaxy method and a facile spin-coating process. Conductive probe atomic force microscopy (CP-AFM) measurements reveal strong rectification and photoresponse behavior in the individual SnSe2 nanosheet/PTAA heterojunction. Theoretical analysis demonstrates that vertically layered SnSe2/PTAA heterojunctions exhibit stronger C-Se covalent coupling than that of the conventional tiled type, which could facilitate more efficient charge transfer. Benefiting from these advantages, the SnSe2/PTAA heterojunction photodetectors with an optimized PTAA concentration show high performance, including a responsivity of 41.02 A/W, an external quantum efficiency of 1.31 × 104%, and high uniformity. The proposed approach for constructing large-scale 2D inorganic-organic heterostructures represents an effective route to fabricate high-performance broadband photodetectors for integrated optoelectronic systems.

Flexible Broadband Organic Photodetectors with Ternary Planar-Mixed Heterojunction Semiconductors and Solution-Processed Polymeric Electrode

Flexible organic photodetectors (OPDs) hold immense promise in health monitoring sensors, flexible imaging sensors, and portable optical communication. Nevertheless, the actualization of high-performance flexible electronics has been hindered by rigid electrodes such as metals or metal oxides. In this work, we constructed a flexible broadband organic photodetector using a solution-processed polymeric electrode, which exhibits flexibility surpassing that of conventional indium tin oxide (ITO) electrodes. Additionally, we employed a planar-mixed heterojunction (PMHJ) through a sequential deposition method and introduced PC71BM as the third constituent into the PM6/Y6 binary active layer, resulting in enhanced photodetection performance and a broadend spectral range. The optimized OPDs demonstrated remarkable detectivity (D*) exceeding 1012 Jones in brodband from 300 to 900 nm, with a champion D* of 6.31 × 1012 Jones at 790 nm. Furthermore, after undergoing 500 cycles of bending, the D* retained approximately 78% of its original performance, highlighting the outstanding mechanical stability. This work presents a promising pathway toward the development of flexible broadband OPDs using a straightforward method, offering enhanced compatibility in diverse application scenarios and propelling the frontier of flexible optoelectronic research.

Probing the Critical Role of Interfaces for Superior Performance in PbS Quantum Dot/Graphene Nanohybrid Broadband Photodetectors

Colloidal quantum dots/graphene (QD/Gr) nanohybrids have been studied intensively for photodetection in a broadband spectrum including ultraviolet, visible, near-infrared, and shortwave infrared (UV-vis-NIR-SWIR). Since the optoelectronic process in the QD/Gr nanohybrid relies on the photogenerated charge carrier transfer from QDs to graphene, understanding the role of the QD-QD and QD-Gr interfaces is imperative to the QD/Gr nanohybrid photodetection. Herein, a systematic study is carried out to probe the effect of these interfaces on the noise, photoresponse, and specific detectivity in the UV-vis-NIR-SWIR spectrum. Interestingly, the photoresponse has been found to be negligible without a 3-mercaptopropionic acid (MPA) ligand exchange, moderate with a single ligand exchange after all QD layers are deposited on graphene, and maximum if it is performed after each QD layer deposition up to five layers of total QD thickness of 260-280 nm. Furthermore, exposure of graphene to C-band UV (UVC) for a short period of 4-5 min before QD deposition leads to improved photoresponse via removal of polar molecules at the QD/Gr interface. With the combination of the MPA ligand exchange and UVC exposure, optimal optoelectronic properties can be obtained on the PbS QD/Gr nanohybrids with high specific detectivity up to 2.6 × 1011, 1.5 × 1011, 5 × 1010, and 1.9 × 109 Jones at 400, 550, 1000, and 1700 nm, respectively, making the nanohybrids promising for broadband photodetection.

Recent advance of high-quality perovskite nanostructure and its application in flexible photodetectors

Flexible photodetectors (PDs) have garnered increasing attention for their potential applications in diverse fields, including weather monitoring, smart robotics, smart textiles, electronic eyes, wearable biomedical monitoring devices, and so on. Notably, perovskite nanostructures have emerged as a promising material for flexible PDs due to their distinctive features, such as a large optical absorption coefficient, tunable band gap, extended photoluminescence decay time, high carrier mobility, low defect density, long exciton diffusion lengths, strong self-trapped effect, good mechanical flexibility, and facile synthesis methods. In this review, we first introduce various synthesis methods for perovskite nanostructures and elucidate their corresponding optical and electrical properties, encompassing quantum dots, nanocrystals, nanowires, nanobelts, nanosheets, single-crystal thin films, polycrystalline thin films, and nanostructured arrays. Furthermore, the working mechanism and key performance parameters of optoelectronic devices are summarized. The review also systematically compiles recent advancements in flexible PDs based on various nanostructured perovskites. Finally, we present the current challenges and prospects for the development of perovskite nanostructures-based flexible PDs.

Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics

Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.

Two-photon absorption flexible photodetector responsive to femtosecond laser

Integrated on-chip femtosecond (fs) laser optoelectronic system, with photodetector as a critical component for light-electrical signal conversion, is a long-sought-after goal for a wide range of frontier applications. However, the high laser peak intensity and complicated nanophotonic waveguide structure of on-chip fs laser are beyond the detectability and integrability of conventional photodetectors. Therefore, flexible photodetector with the response on intense fs laser is in urgent needs. Herein, we demonstrate the first (to our knowledge) two-photon absorption (TPA) flexible photodetector based on the strong TPA nonlinearity of layered hybrid perovskite (IA)2(MA)2Pb3Br10, exhibiting efficient sub-bandgap response on the infrared fs laser at 700-1000 nm. High saturation intensity up to ∼3.8 MW/cm2 is achieved. The device also shows superior current stability even after bending for 1000 cycles. This work may pave the new way for the application of flexible optoelectronics specialized in integrated fs-laser detection.

Editorial for the Special Issue on Flexible Sensors and Actuators for Biomedicine

Flexible sensors and actuators typically rely on functional materials with low Young's moduli or ultrathin geometries [...].

Self-Driven Gr/WSe2/Gr Photodetector with High Performance Based on Asymmetric Schottky van der Waals Contacts

Two-dimensional (2D) self-driven photodetectors have a wide range of applications in wearable, imaging, and flexible electronics. However, the preparation of most self-powered photodetectors is still complex and time-consuming. Simultaneously, the constant work function of a metal, numerous defects, and a large Schottky barrier at the 2D/metal interface hinder the transmission and collection of optical carriers, which will suppress the optical responsivity of the device. This paper proposed a self-driven graphene/WSe2/graphene (Gr/WSe2/Gr) photodetector with asymmetric Schottky van der Waals (vdWs) contacts. The vdWs contacts are formed by transferring Gr as electrodes using the dry-transfer method, obviating the limitations of defects and Fermi-level pinning at the interface of electrodes made by conventional metal deposition methods to a great extent and resulting in superior dynamic response, which leads to a more efficient and faster collection of photogenerated carriers. This work also demonstrates that the significant surface potential difference of Gr electrodes is a crucial factor to ensure their superior performance. The self-driven Gr/WSe2/Gr photodetector exhibits an ultrahigh Ilight/Idark ratio of 106 with a responsivity value of 20.31 mA/W and an open-circuit voltage of 0.37 V at zero bias. The photodetector also has ultrafast response speeds of 42.9 and 56.0 μs. This paper provides a feasible way to develop self-driven optoelectronic devices with a simple structure and excellent performance.

Ultrahigh UV Responsivity Quasi-Two-Dimensional BixSn1-xO2 Films Achieved through Surface Reaction

In this study, quasi-two-dimensional BixSn1-xO2 (BTO) thin films were fabricated using a liquid metal transfer method. The ultraviolet (UV) photodetector based on BTO thin films was constructed, and the ultrahigh responsivity of 589 A/W was observed at 300 nm UV light illumination. Interestingly, by dropping ethanol during light-off period, the recovery time induced by the persistent photoconductivity (PPC) effect is reduced from 1.65 × 103 s to 5.71 s. Furthermore, the recovery time can also be reduced by dropping methanol, propylene glycol, NaNO2, and Na2SO3 after light termination. The working mechanisms are attributed to the rapid consumption of holes stored in BTO thin films by reaction with those solutions. This work demonstrates that the BTO thin films have potential applications in high-performance UV detectors and present an innovation route to weaken the PPC effects in semiconductors by introducing chemical liquids on their surface.

Improving the Luminescence Performance of Monolayer MoS2 by Doping Multiple Metal Elements with CVT Method

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) draw much attention as critical semiconductor materials for 2D, optoelectronic, and spin electronic devices. Although controlled doping of 2D semiconductors can also be used to tune their bandgap and type of carrier and further change their electronic, optical, and catalytic properties, this remains an ongoing challenge. Here, we successfully doped a series of metal elements (including Hf, Zr, Gd, and Dy) into the monolayer MoS2 through a single-step chemical vapor transport (CVT), and the atomic embedded structure is confirmed by scanning transmission electron microscope (STEM) with a probe corrector measurement. In addition, the host crystal is well preserved, and no random atomic aggregation is observed. More importantly, adjusting the band structure of MoS2 enhanced the fluorescence and the carrier effect. This work provides a growth method for doping non-like elements into 2D MoS2 and potentially many other 2D materials to modify their properties.

Recent progress in construction methods and applications of perovskite photodetector arrays

Metal halide perovskites are considered promising materials for next-generation optoelectronic devices due to their excellent optoelectronic performances and simple solution preparation process. Precise micro/nano-scale patterning techniques enable perovskite materials to be used for array integration of photodetectors. In this review, the device types of perovskite-based photodetectors are introduced and the structural characteristics and corresponding device performances are analyzed. Then, the typical construction methods suitable for the fabrication of perovskite photodetector arrays are highlighted, including surface treatment technology, template-assisted construction, inkjet printing technology, and modified photolithography. Furthermore, the current development trends and their applications in image sensing of perovskite photodetector arrays are summarized. Finally, major challenges are presented to guide the development of perovskite photodetector arrays.

Self-Powered Sb2Te3/MoS2 Heterojunction Broadband Photodetector on Flexible Substrate from Visible to Near Infrared

Van der Waals (vdWs) heterostructures, assembled by stacking of two-dimensional (2D) crystal layers, have emerged as a promising new material system for high-performance optoelectronic applications, such as thin film transistors, photodetectors, and light-emitters. In this study, we showcase an innovative device that leverages strain-tuning capabilities, utilizing a MoS₂/Sb₂Te₃ vdWs p-n heterojunction architecture designed explicitly for photodetection across the visible to near-infrared spectrum. These heterojunction devices provide ultra-low dark currents as small as 4.3 pA, a robust photoresponsivity of 0.12 A W^-1, and reasonable response times characterized by rising and falling durations of 0.197 s and 0.138 s, respectively. These novel devices exhibit remarkable tunability under the application of compressive strain up to 0.3%. The introduction of strain at the heterojunction interface influences the bandgap of the materials, resulting in a significant alteration of the heterojunction's band structure. This subsequently shifts the detector's optical absorption properties. The proposed strategy of strain-induced engineering of the stacked 2D crystal materials allows the tuning of the electronic and optical properties of the device. Such a technique enables fine-tuning of the optoelectronic performance of vdWs devices, paving the way for tunable high-performance, low-power consumption applications. This development also holds significant potential for applications in wearable sensor technology and flexible electro-optic circuits.

Emerging Trends in 2D TMDs Photodetectors and Piezo-Phototronic Devices

The piezo-phototronic effect shows promise with regards to improving the performance of 2D semiconductor-based flexible optoelectronics, which will potentially open up new opportunities in the electronics field. Mechanical exfoliation and chemical vapor deposition (CVD) influence the piezo-phototronic effect on a transparent, ultrasensitive, and flexible van der Waals (vdW) heterostructure, which allows the use of intrinsic semiconductors, such as 2D transition metal dichalcogenides (TMD). The latest and most promising 2D TMD-based photodetectors and piezo-phototronic devices are discussed in this review article. As a result, it is possible to make flexible piezo-phototronic photodetectors, self-powered sensors, and higher strain tolerance wearable and implantable electronics for health monitoring and generation of piezoelectricity using just a single semiconductor or vdW heterostructures of various nanomaterials. A comparison is also made between the functionality and distinctive properties of 2D flexible electronic devices with a range of applications made from 2D TMDs materials. The current state of the research about 2D TMDs can be applied in a variety of ways in order to aid in the development of new types of nanoscale optoelectronic devices. Last, it summarizes the problems that are currently being faced, along with potential solutions and future prospects.

A Centimeter-Scale Type-II Weyl Semimetal for Flexible and Fast Ultra-Broadband Photodetection from Ultraviolet to Sub-Millimeter Wave Regiem

Flexible photodetectors with ultra-broadband sensitivities, fast response, and high responsivity are crucial for wearable applications. Recently, van der Waals (vdW) Weyl semimetals have gained much attention due to their unique electronic band structure, making them an ideal material platform for developing broadband photodetectors from ultraviolet (UV) to the terahertz (THz) regime. However, large-area synthesis of vdW semimetals on a flexible substrate is still a challenge, limiting their application in flexible devices. In this study, centimeter-scale type-II vdW Weyl semimetal, T_d -MoTe₂ films, are grown on a flexible mica substrate by molecular beam epitaxy. A self-powered and flexible photodetector without an antenna demonstrated an outstanding ability to detect electromagnetic radiation from UV to sub-millimeter (SMM) wave at room temperature, with a fast response time of ≈20 µs, a responsivity of 0.53 mA W^-1 (at 2.52 THz), and a noise-equivalent power (NEP) of 2.65 nW Hz^-0.5 (at 2.52 THz). The flexible photodetectors are also used to image shielded items with high resolution at 2.52 THz. These results can pave the way for developing flexible and wearable optoelectronic devices using direct-grown large-area vdW semimetals.

Emerging photoelectric devices for neuromorphic vision applications: principles, developments, and outlooks

The traditional von Neumann architecture is gradually failing to meet the urgent need for highly parallel computing, high-efficiency, and ultra-low power consumption for the current explosion of data. Brain-inspired neuromorphic computing can break the inherent limitations of traditional computers. Neuromorphic devices are the key hardware units of neuromorphic chips to implement the intelligent computing. In recent years, the development of optogenetics and photosensitive materials has provided new avenues for the research of neuromorphic devices. The emerging optoelectronic neuromorphic devices have received a lot of attentions because they have shown great potential in the field of visual bionics. In this paper, we summarize the latest visual bionic applications of optoelectronic synaptic memristors and transistors based on different photosensitive materials. The basic principle of bio-vision formation is first introduced. Then the device structures and operating mechanisms of optoelectronic memristors and transistors are discussed. Most importantly, the recent progresses of optoelectronic synaptic devices based on various photosensitive materials in the fields of visual perception are described. Finally, the problems and challenges of optoelectronic neuromorphic devices are summarized, and the future development of visual bionics is also proposed.

Advanced Stretchable Photodetectors: Strategies, Materials and Devices

Past decades have witnessed the generation of new stretchable photodetectors in electronic eyes, health sensing, wearable devices, intelligent monitoring and other fields. Stretchable devices require not only outstanding performance but also excellent flexibility, adaptability and stability. Innovative strategies have been proposed to realize the stretchability of devices. In addition, novel functional materials including zero-dimensional nanomaterials, one-dimensional inorganic nanomaterials, two-dimensional layered materials, organic materials, and organic-inorganic composite materials with excellent properties are emerging to continuously improve the performance of devices. Here, the recent research progress of stretchable photodetectors in terms of both various design methods and functional materials is outlined. The optical performance and stretchable properties are also comprehensively reviewed. Finally, a summary and the challenges associated with the application of stretchable photodetectors are presented.

Flexible Electronics Based on Organic Semiconductors: from Patterned Assembly to Integrated Applications

Organic flexible electronic devices are at the forefront of the electronics as they possess the potential to bring about a major lifestyle revolution owing to outstanding properties of organic semiconductors, including solution processability, lightweight and flexibility. For the integration of organic flexible electronics, the precise patterning and ordered assembly of organic semiconductors have attracted wide attention and gained rapid developments, which not only reduces the charge crosstalk between adjacent devices, but also enhances device uniformity and reproducibility. This review focuses on recent advances in the design, patterned assembly of organic semiconductors, and flexible electronic devices, especially for flexible organic field-effect transistors (FOFETs) and their multifunctional applications. First, typical organic semiconductor materials and material design methods are introduced. Based on these organic materials with not only superior mechanical properties but also high carrier mobility, patterned assembly strategies on flexible substrates, including one-step and two-step approaches are discussed. Advanced applications of flexible electronic devices based on organic semiconductor patterns are then highlighted. Finally, future challenges and possible directions in the field to motivate the development of the next generation of flexible electronics are proposed.

Embedded Integration of Sb2Se3 Film by Low-Temperature Plasma-Assisted Chemical Vapor Reaction with Polycrystalline Si Transistor for High-Performance Flexible Visible-to-Near-Infrared Photodetector

Flexible optoelectronics have garnered considerable interest for applications such as optical communication, motion capture, biosignal detection, and night vision. Transition-metal dichalcogenides are widely used as flexible photodetectors owing to their outstanding electrical and optical properties and high flexibility. Herein, a two-dimensional (2D) Sb₂Se₃ film-based one transistor-one resistor (1T1R) flexible photodetector with high photosensing current and detection ranges from visible to near-infrared was developed. The flexible 1T1R was fabricated using an efficient field-effect transistor platform with the 2D Sb₂Se₃ film directly deposited on the sensing region using a low-temperature plasma-assisted chemical vapor reaction. The photodetector could achieve a maximum I_photo/I_dark of 15,000 under white light with a power density of 26 mW/cm², in which the photodetector showed quick rising and falling response times of 0.16 and 0.28 s, respectively. The 2D Sb₂Se₃ film exhibits broadband absorption in the visible and IR regions, yielding an excellent photoresponse under laser illumination with different wavelengths. To investigate the flexibility and stability of the 1T1R photodetector, the photoresponses were measured under different bending cycles and curvatures, which maintained its functions and exhibited high stability under convex and concave bending at a curvature radius of 20 mm.

Surface Engineering in SnO2/Si for High-Performance Broadband Photodetectors

Silicon-based photodetectors are important optoelectronic devices in many fields. Many investigations have been conducted to improve the performance of silicon-based photodetectors, such as spectral responsivity and sensitivity in the ultraviolet band. In this study, we combine the surface structure engineering of silicon with wide-bandgap semiconductor SnO₂ films to realize textured Si-based heterojunction photodetectors. The obtained SnO₂/T-Si photodetectors exhibit high responsivity ranging from ultraviolet to near-infrared light. Under a bias voltage of 1 V, SnO₂/T-Si photodetectors (PDs) with an inverted pyramid texture show the best performance, and the typical responsivities to ultraviolet, visible, and near-infrared light are 0.512, 0.538, 1.88 (800 nm, 67.7 μW/cm²) A/W@1 V, respectively. The photodetectors exhibit short rise and decay times of 18.07 and 29.16 ms, respectively. Our results demonstrate that SnO₂/T-Si can serve as a high-performance broadband photodetector.

Ionic Liquid-Gated Near-Infrared Polymer Phototransistors and Their Persistent Photoconductivity Application in Optical Memory

Organic phototransistors (OPTs) based on polymers have attracted substantial attention due to their excellent signal amplification, significant noise reduction, and solution process. Recently, the near-infrared (NIR) detection becomes urgent for OPTs with the increased demand for biomedicine, medical diagnostics, and health monitoring. To achieve this goal, a low working voltage of the OPTs is highly desirable. Therefore, the traditional dielectric gate can be replaced by an electrolyte gate to form electrolyte-gated organic phototransistors (EGOPTs), which are not only able to work at voltages below 1.0 V but also are biocompatible. PCDTPT, one of the most popular narrow band gap donor-acceptor copolymer, has been rarely studied in EGOPTs. In this work, an organic NIR-sensitive EGOPT based on PCDTPT is demonstrated with the detectivity of 7.08 × 10¹¹ Jones and the photoresponsivity of 3.56 A/W at a low operating voltage. In addition, an existing persistent photoconductivity (PPC) phenomenon was also observed when the device was exposed to air. The PPC characteristic of the EGOPT in air has been used to achieve a phototransistor memory, and the gate bias can directly eliminate the PPC as an erasing operation. This work reveals the underlying mechanism of the electrolyte-gated organic phototransistor memories and broadens the application of the EGOPTs.

Recent advances in self-powered and flexible UVC photodetectors

Ultraviolet-C (UVC) radiation is employed in various applications, including irreplaceable applications in military and civil fields, such as missile guidance, flame detection, partial discharge detection, disinfection, and wireless communication. Although most modern electronics are based on Si, UVC detection technology remains a unique exception because the short wavelength of UV radiation makes efficient detection with Si difficult. In this review, recent challenges in obtaining ideal UVC photodetectors with various materials and various forms are introduced. An ideal photodetector must satisfy the following requirements: high sensitivity, fast response speed, high on/off photocurrent ratio, good regional selectivity, outstanding reproducibility, and superior thermal and photo stabilities. UVC detection is still in its infancy compared to the detection of UVA as well as other photon spectra, and recent research has focused on different key components, including the configuration, material, and substrate, to acquire battery-free, super-sensitive, ultra-stable, ultra-small, and portable UVC photodetectors. We introduce and discuss the strategies for fabricating self-powered UVC photodetectors on flexible substrates in terms of the structure, material, and direction of incoming radiation. We also explain the physical mechanisms of self-powered devices with various architectures. Finally, we present a brief outlook that discusses the challenges and future strategies for deep-UVC photodetectors.

Surface Wrinkling for Flexible and Stretchable Sensors

Recent advances in nanolithography, miniaturization, and material science, along with developments in wearable electronics, are pushing the frontiers of sensor technology into the large-scale fabrication of highly sensitive, flexible, stretchable, and multimodal detection systems. Various strategies, including surface engineering, have been developed to control the electrical and mechanical characteristics of sensors. In particular, surface wrinkling provides an effective alternative for improving both the sensing performance and mechanical deformability of flexible and stretchable sensors by releasing interfacial stress, preventing electrical failure, and enlarging surface areas. In this study, recent developments in the fabrication strategies of wrinkling structures for sensor applications are discussed. The fundamental mechanics, geometry control strategies, and various fabricating methods for wrinkling patterns are summarized. Furthermore, the current state of wrinkling approaches and their impacts on the development of various types of sensors, including strain, pressure, temperature, chemical, photodetectors, and multimodal sensors, are reviewed. Finally, existing wrinkling approaches, designs, and sensing strategies are extrapolated into future applications.

Metal Electrode-Free Halide Perovskite-Based Flexible Ultraviolet-C Photodetector with Large Area

Ultraviolet-C (UVC) photodetector has appealed to a numerous number of research owing to its manifold applications in wireless communication, flame monitoring, and medicine. However, in addition to superior performance and high stability of recent studies, scalability and production cost are important factors for commercialization and practical implementation. In this study, a halide perovskite-based UVC photodetector was fabricated using spin-coating process and low-temperature annealing. Corning® Willow® Glass was selected as the substrate for the bottom-illuminated device due to its flexibility and exceptional optical transmission (approximately 60%) in the deep-UV region. The device had a vertical structure with a large active area (1 cm²) owing to the judicious utilization of electrodes. Under bent state with a curvature radius of 25 mm, the as-fabricated device exhibited high response and repeatability with an on/off ratio of 9.57 × 10³, a fast response speed of 45/46 ms (rise/fall times) at zero bias under the illumination of a 254-nm UV lamp. The results are based on a flexible and lightweight photodetector without the utilization of notable metal electrodes.

3D Printed Skin-Interfaced UV-Visible Hybrid Photodetectors

Photodetectors that are intimately interfaced with human skin and measure real-time optical irradiance are appealing in the medical profiling of photosensitive diseases. Developing compliant devices for this purpose requires the fabrication of photodetectors with ultraviolet (UV)-enhanced broadband photoresponse and high mechanical flexibility, to ensure precise irradiance measurements across the spectral band critical to dermatological health when directly applied onto curved skin surfaces. Here, a fully 3D printed flexible UV-visible photodetector array is reported that incorporates a hybrid organic-inorganic material system and is integrated with a custom-built portable console to continuously monitor broadband irradiance in-situ. The active materials are formulated by doping polymeric photoactive materials with zinc oxide nanoparticles in order to improve the UV photoresponse and trigger a photomultiplication (PM) effect. The ability of a stand-alone skin-interfaced light intensity monitoring system to detect natural irradiance within the wavelength range of 310-650 nm for nearly 24 h is demonstrated.

Screen-Printable Silver Paste Material for Semitransparent and Flexible Metal-Semiconductor-Metal Photodetectors with Liquid-Phase Procedure

Photodetectors are widely applied in modern industrial fields because they convert light energy into electrical signals. We propose a printable silver (Ag) paste electrode for a highly flexible metal–semiconductor–metal (MSM) broadband visible light photodetector as a wearable and portable device. Single-crystal and surface-textured silicon substrates with thicknesses of 37.21 μm were fabricated using a wet etching process. Surface texturization on flexible Si substrates enhances the light-trapping effect and minimizes reflectance from the incident light, and the average reflectance is reduced by 16.3% with pyramid-like structures. In this study, semitransparent, conductive Ag paste electrodes were manufactured using a screen-printing with liquid-phase process to form a flexible MSM broadband visible light photodetector. The transmittance of the homemade Ag paste solution fell between 34.83% and 36.98% in the wavelength range of visible light, from 400 nm to 800 nm. The highest visible light photosensitivity was 1.75 × 10⁴ at 19.5 W/m². The photocurrents of the flexible MSM broadband visible light photodetector were slightly changed under concave and convex conditions, displaying stable and durable bending properties.

Self-Powered Organometal Halide Perovskite Photodetector with Embedded Silver Nanowires

Metal-semiconductor-metal (MSM) configuration of perovskite photodetectors (PPDs) suggests easy and low-cost manufacturing. However, the basic structures of MSM PPDs include vertical and lateral configurations, which require the use of expensive materials such as transparent conductive oxides or/and sophisticated fabrication techniques such as lithography. Integrating metallic nanowire-based electrodes into the perovskite photo-absorber layer to form one-half of the MSM PPD structure could potentially resolve the key issues of both configurations. Here, a manufacturing of solution-processed and self-powered MSM PPDs with embedded silver nanowire electrodes is demonstrated. The embedding of silver nanowire electrode into the perovskite layer is achieved by treating the silver nanowire/perovskite double layer with a methylamine gas vapor. The evaporated gold layer is used as the second electrode to form MSM PPDs. The prepared MSM PPDs show a photoresponsivity of 4 × 10-5 AW-1 in the UV region and 2 × 10-5 AW-1 in the visible region. On average, the devices exhibit a photocurrent of 1.1 × 10-6 A under white light (75 mW cm-2) illumination with an ON/OFF ratio of 83.4. The results presented in this work open up a new method for development and fabrication of simple, solution-processable MSM self-powered PPDs.

Channel Scaling Dependent Photoresponse of Copper-Based Flexible Photodetectors Fabricated Using Laser-Induced Oxidation

Copper (Cu) oxide compounds (Cu_xO), which include cupric (CuO) and cuprous (Cu₂O) oxide, have been recognized as a promising p-channel material with useful photovoltaic properties and superior thermal conductivity. Typically, deposition methods or thermal oxidation can be used to obtain Cu_xO. However, these processes are difficult to apply to flexible substrates because plastics have a comparatively low glass transition temperature. Also, additional patterning steps are needed to fabricate applications. In this work, we fabricated a metal-semiconductor-metal photodetector using laser-induced oxidation of thin Cu films under ambient conditions. Raman spectroscopy, scanning electron microscopy-energy-dispersive X-ray spectroscopy, and atomic force microscopy were used to study the composition and morphology of our devices. Moreover, the photoresponse of this device is reported herein. We performed an in-depth analysis of the relationship between the channel size and number of carriers using scanning photocurrent microscopy. The carrier transport behaviors were identified; the photocurrent decreased as the length and width of the channel increased. Furthermore, we verified the suitability of the device as a flexible photodetector using a variety of bending tests. Our in-depth analysis of this Cu-based flexible photodetector could play an important role in understanding the mechanisms of other flexible photovoltaic applications.

Highly-Responsive Broadband Photodetector Based on Graphene-PTAA-SnS2 Hybrid

The development of wearable systems stimulate the exploration of flexible broadband photodetectors with high responsivity and stability. In this paper, we propose a facile liquid-exfoliating method to prepare SnS₂ nanosheets with high-quality crystalline structure and optoelectronic properties. A flexible photodetector is fabricated using the SnS₂ nanosheets with graphene-poly[bis(4-phenyl) (2,4,6-trimethylphenyl) amine (PTAA) hybrid structure. The liquid-exfoliated SnS₂ nanosheets enable the photodetection from ultraviolet to near infrared with high responsivity and detectivity. The flexible broadband photodetector demonstrates a maximum responsivity of 1 × 10⁵ A/W, 3.9 × 10⁴ A/W, 8.6 × 10² A/W and 18.4 A/W under 360 nm, 405 nm, 532 nm, and 785 nm illuminations, with specific detectivity up to ~10¹² Jones, ~10¹¹ Jones, ~10⁹ Jones, and ~10⁸ Jones, respectively. Furthermore, the flexible photodetector exhibits nearly invariable performance over 3000 bending cycles, rendering great potentials for wearable applications.

Narrowband organic photodetectors - towards miniaturized, spectroscopic sensing

Omnipresent quality monitoring in food products, blood-oxygen measurement in lightweight conformal wrist bands, or data-driven automated industrial production: Innovation in many fields is being empowered by sensor technology. Specifically, organic photodetectors (OPDs) promise great advances due to their beneficial properties and low-cost production. Recent research has led to rapid improvement in all performance parameters of OPDs, which are now on-par or better than their inorganic counterparts, such as silicon or indium gallium arsenide photodetectors, in several aspects. In particular, it is possible to directly design OPDs for specific wavelengths. This makes expensive and bulky optical filters obsolete and allows for miniature detector devices. In this review, recent progress of such narrowband OPDs is systematically summarized covering all aspects from narrow-photo-absorbing materials to device architecture engineering. The recent challenges for narrowband OPDs, like achieving high responsivity, low dark current, high response speed, and good dynamic range are carefully addressed. Finally, application demonstrations covering broadband and narrowband OPDs are discussed. Importantly, several exciting research perspectives, which will stimulate further research on organic-semiconductor-based photodetectors, are pointed out at the very end of this review.

Mechanoluminescence Rebrightening the Prospects of Stress Sensing: A Review

The emergence of new applications, such as in artificial intelligence, the internet of things, and biotechnology, has driven the evolution of stress sensing technology. For these emerging applications, stretchability, remoteness, stress distribution, a multimodal nature, and biocompatibility are important performance characteristics of stress sensors. Mechanoluminescence (ML)-based stress sensing has attracted widespread attention because of its characteristics of remoteness and having a distributed response to mechanical stimuli as well as its great potential for stretchability, biocompatibility, and self-powering. In the past few decades, great progress has been made in the discovery of ML materials, analysis of mechanisms, design of devices, and exploration of applications. One can find that with this progress, the focus of ML research has shifted from the phenomenon in the earliest stage to materials and recently toward devices. At the present stage, while showing great prospects for advanced stress sensing applications, ML-based sensing still faces major challenges in material optimization, device design, and system integration.

High-Performance Flexible InAs Thin-Film Photodetector Arrays with Heteroepitaxial Growth Using an Abruptly Graded InxAl1-xAs Buffer

Current infrared thermal image sensors are mainly based on planar firm substrates, but the rigid form factor appears to restrain the versatility of their applications. For wearable health monitoring and implanted biomedical sensing, transfer of active device layers onto a flexible substrate is required while controlling the high-quality crystalline interface. Here, we demonstrate high-detectivity flexible InAs thin-film mid-infrared photodetector arrays through high-yield wafer bonding and a heteroepitaxial lift-off process. An abruptly graded In_xAl_1-xAs (0.5 < x < 1) buffer was found to drastically improve the lift-off interface morphology and reduce the threading dislocation density twice, compared to the conventional linear grading method. Also, our flexible InAs photodetectors showed excellent optical performance with high mechanical robustness, a peak room-temperature specific detectivity of 1.21 × 10⁹ cm-Hz^1/2/W at 3.4 μm, and excellent device reliability. This flexible InAs photodetector enabled by the heteroepitaxial lift-off method shows promise for next-generation thermal image sensors.

Organic Field-Effect Transistor-Based Biosensors with Enhanced Sensitivity and Reliability under Illumination for Carcinoembryonic Antigen Bioassay

Achieving biosensors of high sensitivity and reliability is extremely significant for early diagnosis and treatment of tumor diseases. Herein, a novel organic field-effect transistor (OFET)-based biosensor was developed and applied for carcinoembryonic antigen (CEA) bioassay. This OFET-based biosensor can respond sensitively to the antigen-antibody immune-recognition reaction under illumination and darkness, respectively, thereby generating electrical signal changes of source-drain current (I_DS) and threshold voltage (V_th). The OFET-based biosensor exhibits detection limits for CEA detection of 0.5 and 0.2 pM, respectively, using I_DS and V_th as the response signals under darkness. When a specific intensity of light is applied, light will influence the charge-carrier transport process in the conductive channel, thus causing biosignals to turn into higher electrical signal changes of photocurrent and threshold voltage under illumination. Compared with the detection results in the dark, the biosensor exhibits higher sensitivity for CEA detection under illumination with detection limits of 13.5 and 16.9 fM. Also, multisignal outputs effectively improve the reliability of the biosensor for CEA detection. Consequently, with powerful detection functions, this OFET-based biosensor is expected to become a high-performance biosensing platform for the detection of various biological substances in the future.

Enhanced Ultraviolet Photoresponse Characteristics of Indium Gallium Zinc Oxide Photo-Thin-Film Transistors Enabled by Surface Functionalization of Biomaterials for Real-Time Ultraviolet Monitoring

Indium gallium zinc oxide (IGZO) is one of the most promising materials for diverse optoelectronic applications based on thin-film transistors (TFTs) including ultraviolet (UV) photodetectors. In particular, the monitoring of UV-A (320-400 nm) exposure is very useful for healthcare applications because it can be used to prevent various human skin and eye-related diseases. However, the relatively weak optical absorption in the UV-A range and the persistent photoconductivity (PPC) arising from the oxygen vacancy-related states of IGZO thin films limit efficient UV monitoring. In this paper, we report the enhancement of the UV photoresponse characteristics of IGZO photo-TFTs by the surface functionalization of biomolecules on an IGZO channel. The biomaterial/IGZO interface plays a crucial role in enhancing UV-A absorption and suppressing PPC under negative gate bias, resulting in not only increased photoresponsivity and specific detectivity but also a fast and repeatable UV photoresponse. In addition, turning off the device without external bias completely eliminates PPC due to the internal electric field induced by the surface functionalization of biomaterials. Such a volatile feature of PPC enables the fast and repeatable UV photoresponse. These results suggest the potential of IGZO photo-TFTs combined with biomaterials for real-time UV monitoring.

Stable flexible photodetector based on FePS3/reduced graphene oxide heterostructure with significant enhancement in photoelectrochemical performance

Herein, FePS₃/reduced graphene oxide heterostructure has been prepared via a typical hydrothermal process, and flexible photodetectors based on hybrids have been subsequently fabricated. The photoresponse measurement results demonstrate that the photodetector exhibits obvious photoelectric conversion behavior without applied potential, indicating that the device possesses the capability to be self-powered. In addition, the photocurrent density of the as-fabricated photodetectors reaches up to 125 nA cm^-2under 90 mW cm^-2illumination intensity without an external power source, which is 5.86 times higher than single FePS₃-based devices. Furthermore, the maximum attenuation in photocurrent density of the as-fabricated flexible photodetectors measured at -0.3 V after different bending cycles and bending angles is 29.8% and 17.7%, respectively. These results demonstrate that the as-fabricated photodetectors have excellent flexibility and provide a simple and effective strategy for the construction of flexible photodetectors.

The Deformation Behavior and Bending Emissions of ZnO Microwire Affected by Deformation-Induced Defects and Thermal Tunneling Effect

The realization of electrically pumped emitters at micro and nanoscale, especially with flexibility or special shapes is still a goal for prospective fundamental research and application. Herein, zinc oxide (ZnO) microwires were produced to investigate the luminescent properties affected by stress. To exploit the initial stress, room temperature in situ elastic bending stress was applied on the microwires by squeezing between the two approaching electrodes. A novel unrecoverable deformation phenomenon was observed by applying a large enough voltage, resulting in the formation of additional defects at bent regions. The electrical characteristics of the microwire changed with the applied bending deformation due to the introduction of defects by stress. When the injection current exceeded certain values, bright emission was observed at bent regions, ZnO microwires showed illumination at the bent region priority to straight region. The bent emission can be attributed to the effect of thermal tunneling electroluminescence appeared primarily at bent regions. The physical mechanism of the observed thermoluminescence phenomena was analyzed using theoretical simulations. The realization of electrically induced deformation and the related bending emissions in single microwires shows the possibility to fabricate special-shaped light sources and offer a method to develop photoelectronic devices.

Self-catalyst β-Ga2O3 semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors

Monoclinic gallium oxide (β-Ga2O3) is a super-wide bandgap semiconductor with excellent chemical and thermal stability, which is an ideal candidate for detecting deep ultraviolet (DUV) radiation (100-280 nm). The growth of β-Ga2O3 is challenging and most methods require Au as the catalyst and a long reacting time (more than 1 hour). In this work, the self-catalyst β-Ga2O3 lateral nanowire networks were synthesized on an insulating substrate rapidly by a simple low-cost Chemical Vapor Deposition (CVD) method. A thin film of β-Ga2O3 nanowire networks was synthesized within a reacting time of 15 minutes, which possesses a huge possibility for the rapid growth of β-Ga2O3 metal oxide nanowires networks and application in the future solar-blind photodetector. MSM (metal-semiconductor-metal) photodetectors based on the β-Ga2O3 nanowire networks revealed fast response (on-off ratios is about 103), which is attributed to the unique cross-junction barrier-dominated conductance of the nanowire networks. In addition, the self-catalyst β-Ga2O3 nanowires grown on insulating SiO2 are achieved and could be expected to find important applications in a bottom-up way of fabricating the next generation semiconductor nanoelectronics.

Recent Progress of Flexible Image Sensors for Biomedical Applications

Flexible image sensors have attracted increasing attention as new imaging devices owing to their lightness, softness, and bendability. Since light can measure inside information from outside of the body, optical-imaging-based approaches, such as X-rays, are widely used for disease diagnosis in hospitals. Unlike conventional sensors, flexible image sensors are soft and can be directly attached to a curved surface, such as the skin, for continuous measurement of biometric information with high accuracy. Therefore, they are expected to gain wide application to wearable devices, as well as home medical care. Herein, the application of such sensors to the biomedical field is introduced. First, their individual components, photosensors, and switching elements, are explained. Then, the basic parameters used to evaluate the performance of each of these elements and the image sensors are described. Finally, examples of measuring the dynamic and static biometric information using flexible image sensors, together with relevant real-world measurement cases, are presented. Furthermore, recent applications of the flexible image sensors in the biomedical field are introduced.

Construction of PtSe2/Ge heterostructure-based short-wavelength infrared photodetector array for image sensing and optical communication applications

In this work, we present the construction of a multilayered PtSe2/Ge heterostructure-based photodetector array comprising 1 × 10 device units operating in the short-wavelength infrared (SWIR) spectrum region. The as-fabricated heterostructures show an obvious photovoltaic effect, providing the devices with the ability to work as self-driven photodetectors. Upon 1550 nm illumination, a typical photodetector exhibits prominent photoresponse performance with the current on/off ratio, responsivity, external quantum efficiency and specific detectivity reaching 1.08 × 103, 766 mA W-1, 61.3% and 1.1 × 1011 Jones, respectively. The device also has a fast response speed with rise/fall times of 54.9 μs/56.6 μs. Thanks to the respectable homogeneity in device performance, the photodetector array can reliably record an image of a "diode symbol" produced by SWIR irradiation. What is more, the photodetector is successfully integrated into a SWIR optical communication system serving as an optical receiver to transmit a text signal. The above results imply a huge possibility of the present heterostructure-based photodetector array for some optoelectronic purposes such as SWIR image sensing and optical communication applications.

Weak Light-Stimulated Synaptic Hybrid Phototransistors Based on Islandlike Perovskite Films Prepared by Spin Coating

An artificial synaptic device that can provide color discrimination, image storage, and image recognition is highly required to mimic the human vision for biological robots. All-inorganic halide perovskites have attracted extensive attention for the reason of their high stability and favorable photoelectric properties. In this study, a light-stimulated synaptic phototransistor based on a CsPbBr₃/organic semiconductor hybrid film is reported. The fabricated CsPbBr₃ film exhibits an island structure, which reduces the hysteresis effectively and at the same time achieves a high specific detectivity of up to 2 × 10¹⁵ Jones. The decay of the photocurrent can be delayed by changing the gate bias, which is essential for achieving high-performance light-stimulated synaptic devices. Due to the outstanding detectivity of the device, the obvious synaptic functions can be observed when triggered by a light signal with a power of 1.6 nW that is much weaker than previous most perovskite-based hybrid synaptic phototransistors under a low operating voltage of -1 V. The electrical power consumption of the device could be as low as 0.076 pJ when the power of light spike was 7.36 nW. Taking into account this characterization, with changing of light intensity or wavelength, the contrast of the image was enlarged, which can further promote the image recognition accuracy. More significantly, this CsPbBr₃/TIPS hybrid film can be fabricated by facile and low-cost solution processes. This study indicates the great potential of solution-processed perovskite-based light-stimulated synapses for future artificial visual systems.

NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode

Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe2 van der waal heterojunction (vdW HJ). A substantial increase in rectification behavior was observed when the devices were subjected to gate bias. The highest rectification of ~ 1 × 104 was obtained at Vg = - 40 V. Remarkable rectification behavior of the p-n diode is solely attributed to the sharp interface between metal and GeSe/MoSe2. The device exhibits a high photoresponse towards NIR (850 nm). A high photoresponsivity of 465 mAW-1, an excellent EQE of 670%, a fast rise time of 180 ms, and a decay time of 360 ms were obtained. Furthermore, the diode exhibits detectivity (D) of 7.3 × 109 Jones, the normalized photocurrent to the dark current ratio (NPDR) of 1.9 × 1010 W-1, and the noise equivalent power (NEP) of 1.22 × 10-13 WHz-1/2. The strong light-matter interaction stipulates that the GeSe/MoSe2 diode may open new realms in multi-functional electronics and optoelectronics applications.

Flexible Ultrathin Single-Crystalline Perovskite Photodetector

Flexible optoelectronic devices attract considerable attention due to their prominent role in creating novel wearable apparatus for bionics, robotics, health care, and so forth. Although bulk single-crystalline perovskite-based materials are well-recognized for the high photoelectric conversion efficiency than the polycrystalline ones, their stiff and brittle nature unfortunately prohibits their application for flexible devices. Here, we introduce ultrathin single-crystalline perovskite film as the active layer and demonstrate a high-performance flexible photodetector with prevailing bending reliability. With a much-reduced thickness of 20 nm, the photodetector made of this ultrathin film can achieve a significantly increased responsivity as 5600A/W, 2 orders of magnitude higher than that of recently reported flexible perovskite photodetectors. The demonstrated 0.2 MHz 3 dB bandwidth further paves the way for high-speed photodetection. Notably, all its optoelectronic characteristics resume after being bent over thousands of times. These results manifest the great potential of single-crystalline perovskite ultrathin films for developing wearable and flexible optoelectronic devices.

Giant Piezoresistive Effect and Strong Bandgap Tunability in Ultrathin InSe upon Biaxial Strain

The ultrathin nature and dangling bonds free surface of 2D semiconductors allow for significant modifications of their bandgap through strain engineering. Here, thin InSe photodetector devices are biaxially stretched, finding, a strong bandgap tunability upon strain. The applied biaxial strain is controlled through the substrate expansion upon temperature increase and the effective strain transfer from the substrate to the thin InSe is confirmed by Raman spectroscopy. The bandgap change upon biaxial strain is determined through photoluminescence measurements, finding a gauge factor of up to ≈200 meV %-1. The effect of biaxial strain on the electrical properties of the InSe devices is further characterized. In the dark state, a large increase of the current is observed upon applied strain which gives a piezoresistive gauge factor value of ≈450-1000, ≈5-12 times larger than that of other 2D materials and of state-of-the-art silicon strain gauges. Moreover, the biaxial strain tuning of the InSe bandgap also translates in a strain-induced redshift of the spectral response of the InSe photodetectors with ΔE cut-off ≈173 meV at a rate of ≈360 meV %-1 of strain, indicating a strong strain tunability of the spectral bandwidth of the photodetectors.

The Evolution of Flexible Electronics: From Nature, Beyond Nature, and To Nature

The flourishing development of multifunctional flexible electronics cannot leave the beneficial role of nature, which provides continuous inspiration in their material, structural, and functional designs. During the evolution of flexible electronics, some originated from nature, some were even beyond nature, and others were implantable or biodegradable eventually to nature. Therefore, the relationship between flexible electronics and nature is undoubtedly vital since harmony between nature and technology evolution would promote the sustainable development. Herein, materials selection and functionality design for flexible electronics that are mostly inspired from nature are first introduced with certain functionality even beyond nature. Then, frontier advances on flexible electronics including the main individual components (i.e., energy (the power source) and the sensor (the electric load)) are presented from nature, beyond nature, and to nature with the aim of enlightening the harmonious relationship between the modern electronics technology and nature. Finally, critical issues in next-generation flexible electronics are discussed to provide possible solutions and new insights in prospective exploration directions.

High-Performance Deep Ultraviolet Photodetector Based on a One-Dimensional Lead-Free Halide Perovskite CsCu2I3 Film with High Stability

Lead halide perovskites have received much attention in the field of optoelectronic devices. However, the environment-unfriendly nature and intrinsic instability of these perovskites hamper their commercial applications. In this work, one novel one-dimensional lead-free halide perovskite with high stability, CsCu₂I₃, was prepared via an antisolvent-assisted crystallization method. The prepared CsCu₂I₃ bears a high exciton binding energy of ∼105 meV and a high photoluminescence quantum yield of 12.3%. We fabricated a deep ultraviolet photodetector based on a CsCu₂I₃ film that is nearly blind to 405 nm visible light but is sensitive to 265 and 365 nm illumination. The device exhibits excellent reproducibility and a high I_light/I_dark ratio of 22 under 265 nm illumination. Furthermore, the responsivity, specific detectivity, and external quantum efficiency are as high as 22.1 mA/W, 1.2 × 10¹¹ Jones, and 10.3% under a light density of 0.305 mW/cm², respectively. These findings demonstrate that CsCu₂I₃ perovskites should have great potential for future optoelectronics.

Highly sensitive optical temperature sensing based on upconversion luminescence in Gd9.33(SiO4)6O2:Yb3+-Er3+/Ho3+ phosphors

In this paper, new upconversion (UC) phosphors for Yb3+-Er3+- and Yb3+-Ho3+-doped Gd9.33(SiO4)6O2 (GSO) were designed via a solid-state reaction method. The phase purity of the samples was examined using XRD patterns. In Yb3+-Er3+ -doped GSO, the characteristic emission peaks of Er3+ appear upon 980 nm excitation, and the optimum Er3+ concentration was found to be 1 mol%. Different changes in the intensity of green and red emissions with Er3+ concentration appeared, and were interpreted by cross-relaxation between Er3+ ions. In Yb3+-Ho3+-doped GSO, three emission peaks of Ho3+ were observed, and the power-dependent UC luminescence was studied. For studying the temperature-sensing properties, different strategies were employed, including thermally coupled levels and non-thermally coupled levels. High sensitivities were obtained in the phosphors, and GSO:Yb3+,Er3+ showed the highest sensitivities. The above investigation results indicated that the developed GSO:Yb3+-Er3+/Ho3+ phosphors could have potential applications in optical thermometry.

Plasmonic-tape-attached multilayered MoS2 film for near-infrared photodetection

Molybdenum disulfide has been intensively studied as a promising material for photodetector applications because of its excellent electrical and optical properties. We report a multilayer MoS₂ film attached with a plasmonic tape for near-infrared (NIR) detection. MoS₂ flakes are chemically exfoliated and transferred onto a polymer substrate, and silver nanoparticles (AgNPs) dewetted thermally on a substrate are transferred onto a Scotch tape. The Scotch tape with AgNPs is attached directly and simply onto the MoS₂ flakes. Consequently, the NIR photoresponse of the MoS₂ device is critically enhanced. The proposed tape transfer method enables the formation of plasmonic structures on arbitrary substrates, such as a polymer substrate, without requiring a high-temperature process. The performance of AgNPs-MoS₂ photodetectors is approximately four times higher than that of bare MoS₂ devices.

Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection

2D layered germanium selenide (GeSe) with p-type conductivity is incorporated with asymmetric contact electrode of chromium/Gold (Cr/Au) and Palladium/Gold (Pd/Au) to design a self-biased, high speed and an efficient photodetector. The photoresponse under photovoltaic effect is investigated for the wavelengths of light (i.e. ~220, ~530 and ~850 nm). The device exhibited promising figures of merit required for efficient photodetection, specifically the Schottky barrier diode is highly sensitive to NIR light irradiation at zero voltage with good reproducibility, which is promising for the emergency application of fire detection and night vision. The high responsivity, detectivity, normalized photocurrent to dark current ratio (NPDR), noise equivalent power (NEP) and response time for illumination of light (~850 nm) are calculated to be 280 mA/W, 4.1 × 10⁹ Jones, 3 × 10⁷ W⁻¹, 9.1 × 10⁻¹² WHz^−1/2 and 69 ms respectively. The obtained results suggested that p-GeSe is a novel candidate for SBD optoelectronics-based technologies.

Unsymmetrical Small Molecules for Broad-Band Photoresponse and Efficient Charge Transport in Organic Phototransistors

Organic photosensitizers have been investigated as effective light-sensing elements that can promote strong absorption with high field-effect mobility in organic phototransistors (OPTs). In this study, a novel organic photosensitizer is synthesized to demonstrate broad-band photoresponse with enhanced electrical performance. An unsymmetrical small molecule of a solubilizing donor (D_sol)-acceptor (A)-dye donor (D_dye) type connected with a twisted conjugation system is designed for broad-band detection (ranging from 250 to 700 nm). This molecule has high solubility, thereby facilitating the formation of uniformly dispersed nanoparticles in an insulating polymer matrix, which is deposited on top of OPT semiconductors by a simple solution process. The broad-band photodetection shown by the organic photosensitizer is realized with improved mobility close to an order of magnitude and high on/off current ratio (∼10⁵) of the organic semiconductor. Furthermore, p-type charge transport behavior in the channel of the OPT is enhanced through the intrinsic electron-accepting ability of the organic photosensitizer caused by the unique molecular configuration. These structural properties of organic photosensitizers contribute to an improvement in broad-band photosensing systems with new optoelectronic properties and functionalities.

Lead-Free Perovskite/Organic Semiconductor Vertical Heterojunction for Highly Sensitive Photodetectors

In recent years, photodetectors based on organic-inorganic lead halide perovskites have been studied extensively. However, the inclusion of lead in those materials can cause severe human health and environmental problems, which is undesirable for practical applications. Here, we report high-performance photodetectors with a tin-based perovskite/PEDOT:PSS vertical heterojunction. The device demonstrates a broadband photoresponse from NIR to UV. The maximum responsivity and gain are up to 2.6 × 10⁶ A/W and 4.7 × 10⁶, respectively. Moreover, a much shorter response time and higher detectivity can be achieved by reducing the thickness of PEDOT:PSS. The outstanding performance is due to the excellent optoelectronic properties of the perovskite and the photogating effect originating from the heterojunction. Furthermore, devices fabricated on flexible substrates can demonstrate not only high sensitivity but also excellent bending stability. This work opens up the opportunity of using lead-free perovskite in highly sensitive photodetectors with vertical heterojunctions.