1
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Shang F, Zha C, Zhu H, Zhang Z, Shen Y, Hou Q, Zhang L, Chu Y, Chen L, Zhao J, Fang W, Zhang Y, Cheng Z, Zhang Y. Effective surface passivation of GaAs nanowire photodetectors by a thin ZnO capping. NANOSCALE 2024; 16:12534-12540. [PMID: 38874930 DOI: 10.1039/d4nr01022a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2024]
Abstract
The III-V nanowire (NW) structure is a good candidate for developing photodetectors. However, high-density surface states caused by the large surface-to-volume ratio severely limit their performance, which is difficult to solve in conventional ways. Here, a robust surface passivation method, using a thin layer of ZnO capping, is developed for promoting NW photodetector performance. 11 cycles of ZnO, grown on pure zinc blende high-quality GaAs NWs by atomic layer deposition, significantly alleviates the undesirable effect of the surface states, without noticeable degradation in NW morphology. An average 20-fold increase in micro-photoluminescence intensity is observed for passivated NWs, which leads to the development of detectors with high responsivity, specific detectivity, and optical gain of 9.46 × 105 A W-1, 3.93 × 1014 Jones, and 2.2 × 108 %, respectively, under low-intensity 532 nm illumination. Passivated NW detectors outperform their counterparts treated by conventional methods, so far as we know, which shows the potential and effectiveness of thin ZnO surface passivation on NW devices.
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Affiliation(s)
- Fuxiang Shang
- College of Integrated Circuits, Zhejiang University, Hangzhou, Zhejiang 311200, China.
| | - Chaofei Zha
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
| | - Hanchen Zhu
- College of Integrated Circuits, Zhejiang University, Hangzhou, Zhejiang 311200, China.
| | - Zheyu Zhang
- College of Integrated Circuits, Zhejiang University, Hangzhou, Zhejiang 311200, China.
| | - Yuanhao Shen
- State Key Laboratory of Chemical Engineering, College of Chemical and Biological Engineering, Zhejiang University, 866 Yuhangtang Rd, Hangzhou 310027, China
| | - Qichao Hou
- College of Integrated Circuits, Zhejiang University, Hangzhou, Zhejiang 311200, China.
| | - Linjun Zhang
- College of Integrated Circuits, Zhejiang University, Hangzhou, Zhejiang 311200, China.
| | - Yanmeng Chu
- College of Integrated Circuits, Zhejiang University, Hangzhou, Zhejiang 311200, China.
| | - Lulu Chen
- College of Integrated Circuits, Zhejiang University, Hangzhou, Zhejiang 311200, China.
| | - Junjie Zhao
- State Key Laboratory of Chemical Engineering, College of Chemical and Biological Engineering, Zhejiang University, 866 Yuhangtang Rd, Hangzhou 310027, China
| | - Wenzhang Fang
- College of Integrated Circuits, Zhejiang University, Hangzhou, Zhejiang 311200, China.
| | - Yishu Zhang
- College of Integrated Circuits, Zhejiang University, Hangzhou, Zhejiang 311200, China.
| | - Zhiyuan Cheng
- College of Integrated Circuits, Zhejiang University, Hangzhou, Zhejiang 311200, China.
| | - Yunyan Zhang
- College of Integrated Circuits, Zhejiang University, Hangzhou, Zhejiang 311200, China.
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2
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Mosina K, Wu B, Antonatos N, Luxa J, Mazánek V, Söll A, Sedmidubsky D, Klein J, Ross FM, Sofer Z. Electrochemical Intercalation and Exfoliation of CrSBr into Ferromagnetic Fibers and Nanoribbons. SMALL METHODS 2024; 8:e2300609. [PMID: 38158388 DOI: 10.1002/smtd.202300609] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2023] [Revised: 11/11/2023] [Indexed: 01/03/2024]
Abstract
Recent studies dedicated to layered van der Waals crystals have attracted significant attention to magnetic atomically thin crystals offering unprecedented opportunities for applications in innovative magnetoelectric, magneto-optic, and spintronic devices. The active search for original platforms for the low-dimensional magnetism study has emphasized the entirely new magnetic properties of two dimensional (2D) semiconductor CrSBr. Herein, for the first time, the electrochemical exfoliation of bulk CrSBr in a non-aqueous environment is demonstrated. Notably, crystal cleavage governed by the structural anisotropy occurred along two directions forming atomically thin and few-layered nanoribbons. The exfoliated material possesses an orthorhombic crystalline structure and strong optical anisotropy, showing the polarization dependencies of Raman signals. The antiferromagnetism exhibited by multilayered CrSBr gives precedence to ferromagnetic ordering in the revealed CrSBr nanostructures. Furthermore, the potential application of CrSBr nanoribbons is pioneered for electrochemical photodetector fabrication and demonstrates its responsivity up to 30 µA cm-2 in the visible spectrum. Moreover, the CrSBr-based anode for lithium-ion batteries exhibited high performance and self-improving abilities. This anticipates that the results will pave the way toward the future study of CrSBr and practical applications in magneto- and optoelectronics.
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Affiliation(s)
- Kseniia Mosina
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - Bing Wu
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - Nikolas Antonatos
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - Jan Luxa
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - Vlastimil Mazánek
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - Aljoscha Söll
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - David Sedmidubsky
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - Julian Klein
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Frances M Ross
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
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3
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Zeng Z, Wang D, Cao J, He W, Zhang B, Zhao C, Liu D, Liu S, Pan J, Chen T, Jiao S, Fang X, Zhao L, Wang J. Self-Assembled BiGaSeAs Composite Superlattice-Structured Nanowire for Broad-Band Photodetection. ACS APPLIED MATERIALS & INTERFACES 2024; 16:16678-16686. [PMID: 38503721 DOI: 10.1021/acsami.3c18673] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/21/2024]
Abstract
Photodetectors with a broad-band response range are widely used in many fields and are regarded as pivotal components of the modern miniaturized electronics industry. However, commercial broad-band photodetectors composed of traditional bulk semiconductor materials are still limited by complex preparation techniques, high costs, and a lack of mechanical strength and flexibility, which are difficult to satisfy the increasing demand for flexible and wearable optoelectronics. Therefore, researchers have been devoted to finding new strategies to obtain flexible, stable, and high-performance broad-band photodetectors. In this work, a novel self-assembled BiGaSeAs composite superlattice-structured nanowire was developed with a simple chemical vapor deposition method for easy fabrication. After the device assembling, the photodetector showed outstanding performance in terms of obvious Ion/Ioff (13.9), broad-band photoresponse (365-940 nm), excellent responsivity (1007.67 A/W), high detectivity (9.38 × 109 Jones), and rapid response (21 and 23 ms). The formation of microheterojunctions among various materials inside the nanowires also contributed to their extended broad-spectrum response and outstanding detection ability. These results indicate that the BiGaSeAs nanowires have potential applications in the field of flexible and wearable electronics.
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Affiliation(s)
- Zhi Zeng
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Dongbo Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Jiamu Cao
- School of Astronautics, Harbin Institute of Technology, Harbin 150001, China
| | - Wen He
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Bingke Zhang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Chenchen Zhao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Donghao Liu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Sihang Liu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Jingwen Pan
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Tianyuan Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Shujie Jiao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Xuan Fang
- School of Science, State Key Laboratory High Power Semicond Lasers, Changchun University Science and Technology, Changchun 130022, China
| | - Liancheng Zhao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Jinzhong Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
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4
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Lu J, Wang H, Fan T, Ma D, Wang C, Wu S, Li X. Back Interface Passivation for Efficient Low-Bandgap Perovskite Solar Cells and Photodetectors. NANOMATERIALS 2022; 12:nano12122065. [PMID: 35745403 PMCID: PMC9231224 DOI: 10.3390/nano12122065] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/17/2022] [Revised: 06/10/2022] [Accepted: 06/13/2022] [Indexed: 11/16/2022]
Abstract
Low-bandgap (Eg~1.25 eV) mixed tin-lead (Sn-Pb) perovskites are promising candidates for efficient solar cells and self-powered photodetectors; however, they suffer from huge amounts of defects due to the unintentional p-type self-doping. In this work, the synergistic effects of maltol and phenyl-C61-butyric acid methyl ester (PCBM) were achieved to improve the performance of low-bandgap perovskite solar cells (PSCs) and unbiased perovskite photodetectors (PPDs) by passivating the defects and tuning charge transfer dynamics. Maltol eliminated the Sn-related traps in perovskite films through a strong metal chelating effect, whereas PCBM elevated the built-in electric potential and thus improved voltage through the spike energy alignment. Combining both advantages of maltol and PCBM, high-quality perovskite films were obtained, enabling low-bandgap PSCs with the best efficiency of 20.62%. Moreover, the optimized PSCs were further applied as self-powered PPDs in a visible light communication system with a response time of 0.736 μs, presenting a satisfactory audio transmission capability.
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Affiliation(s)
- Jiayu Lu
- Collaborative Innovation Center of Suzhou Nano Science and Technology, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, China; (J.L.); (H.W.); (T.F.); (X.L.)
| | - Huayang Wang
- Collaborative Innovation Center of Suzhou Nano Science and Technology, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, China; (J.L.); (H.W.); (T.F.); (X.L.)
| | - Tingbing Fan
- Collaborative Innovation Center of Suzhou Nano Science and Technology, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, China; (J.L.); (H.W.); (T.F.); (X.L.)
| | - Dong Ma
- School of Rail Transportation, Soochow University, Suzhou 215137, China
- Correspondence: (D.M.); (C.W.); (S.W.)
| | - Changlei Wang
- Collaborative Innovation Center of Suzhou Nano Science and Technology, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, China; (J.L.); (H.W.); (T.F.); (X.L.)
- Correspondence: (D.M.); (C.W.); (S.W.)
| | - Shaolong Wu
- Collaborative Innovation Center of Suzhou Nano Science and Technology, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, China; (J.L.); (H.W.); (T.F.); (X.L.)
- Correspondence: (D.M.); (C.W.); (S.W.)
| | - Xiaofeng Li
- Collaborative Innovation Center of Suzhou Nano Science and Technology, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, China; (J.L.); (H.W.); (T.F.); (X.L.)
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5
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Zhang L, Li X, Cheng S, Shan C. Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III-V Nanostructures. MATERIALS 2022; 15:ma15051917. [PMID: 35269147 PMCID: PMC8911728 DOI: 10.3390/ma15051917] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/29/2021] [Revised: 02/23/2022] [Accepted: 02/24/2022] [Indexed: 12/02/2022]
Abstract
III–V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure–property relationship of III–V nanowires (NWs), this review mainly focuses on key procedures involved in the synthesis, fabrication, and application of III–V materials-based devices. We summarized the influence of synthesis methods on the nanostructures (NWs, nanodots and nanosheets) and presented the role of catalyst/droplet on their synthesis process through in situ techniques. To provide valuable guidance for device design, we further summarize the influence of structural parameters (phase, defects and orientation) on their electrical, optical, mechanical and electromechanical properties. Moreover, the dissolution and contact formation processes under heat, electric field and ionic water environments are further demonstrated at the atomic level for the evaluation of structural stability of III–V NWs. Finally, the promising applications of III–V materials in the energy-storage field are introduced.
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Affiliation(s)
| | - Xing Li
- Correspondence: (X.L.); (C.S.)
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6
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Peng M, Xie R, Wang Z, Wang P, Wang F, Ge H, Wang Y, Zhong F, Wu P, Ye J, Li Q, Zhang L, Ge X, Ye Y, Lei Y, Jiang W, Hu Z, Wu F, Zhou X, Miao J, Wang J, Yan H, Shan C, Dai J, Chen C, Chen X, Lu W, Hu W. Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition. SCIENCE ADVANCES 2021; 7:eabf7358. [PMID: 33863732 PMCID: PMC8051875 DOI: 10.1126/sciadv.abf7358] [Citation(s) in RCA: 64] [Impact Index Per Article: 21.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2020] [Accepted: 03/02/2021] [Indexed: 05/06/2023]
Abstract
Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W-1 (at 1550-nm laser) and the blackbody responsivity of 5.19 A W-1 were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition-grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.
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Affiliation(s)
- Meng Peng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai 200083, China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai 200083, China.
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Peng Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai 200083, China.
| | - Fang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai 200083, China.
| | - Haonan Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai 200083, China
| | - Yang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai 200083, China
| | - Fang Zhong
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai 200083, China
| | - Peisong Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiafu Ye
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qing Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Lili Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai 200083, China
| | - Xun Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yan Ye
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Yuchen Lei
- Department of Physics, State Key Laboratory of Surface Physics and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Fudan University, 200433 Shanghai, China
| | - Wei Jiang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Feng Wu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xiaohao Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai 200083, China
| | - Jinshui Miao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai 200083, China
| | - Jianlu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai 200083, China
| | - Hugen Yan
- Department of Physics, State Key Laboratory of Surface Physics and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Fudan University, 200433 Shanghai, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Jiangnan Dai
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Changqing Chen
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai 200083, China
| | - Wei Lu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai 200083, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai 200083, China.
- University of Chinese Academy of Sciences, Beijing 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
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7
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Wang D, Chen X, Fang X, Tang J, Lin F, Wang X, Liu G, Liao L, Ho JC, Wei Z. Photoresponse improvement of mixed-dimensional 1D-2D GaAs photodetectors by incorporating constructive interface states. NANOSCALE 2021; 13:1086-1092. [PMID: 33393960 DOI: 10.1039/d0nr06788a] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Mixed-dimensional optoelectronic devices bring new challenges and opportunities over the design of conventional low-dimensional devices. In this work, we develop unreported mixed-dimensional GaAs photodetectors by utilizing 1D GaAs nanowires (NWs) and 2D GaAs non-layered sheets (2DNLSs) as active device materials. The fabricated photodetector exhibits a responsivity of 677 A W-1 and a detectivity of 8.69 × 1012 cm Hz0.5 W-1 under 532 nm irradiation, which are already much better than those of state-of-the-art low-dimensional GaAs photodetectors. It is found that this unique device structure is capable of converting the notoriously harmful surface states of NWs and 2DNLSs into their constructive interface states, which contribute to the formation of quasi-type-II band structures and electron wells in the device channel for the substantial performance enhancement. More importantly, these interface states are demonstrated to be insensitive to ambient environments, indicating the superior stability of the device. All these results evidently illustrate a simple but effective way to utilize the surface states of nanomaterials to achieve the high-performance photodetectors.
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Affiliation(s)
- Dengkui Wang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China.
| | - Xue Chen
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China.
| | - Xuan Fang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China.
| | - Jilong Tang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China.
| | - Fengyuan Lin
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China.
| | - Xinwei Wang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China.
| | - Guanlin Liu
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China.
| | - Lei Liao
- State Key Laboratory for Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha 410082, China.
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR 999077, China
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China.
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8
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Guo Y, Liu D, Miao C, Sun J, Pang Z, Wang P, Xu M, Han N, Yang ZX. Ambipolar transport in Ni-catalyzed InGaAs nanowire field-effect transistors for near-infrared photodetection. NANOTECHNOLOGY 2021; 32:145203. [PMID: 33443238 DOI: 10.1088/1361-6528/abd358] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Weak n-type characteristics or poor p-type characteristics are limiting the applications of binary semiconductors based on ambipolar field-effect transistors (FETs). In this work, a ternary alloy of In0.2Ga0.8As nanowires (NWs) is successfully prepared using a Ni catalyst during a typical solid-source chemical-vapor-deposition process to balance the weak n-type conduction behavior in ambipolar GaAs NWFETs and the poor p-type conduction behavior in ambipolar InAs NWFETs. The presence of ambipolar transport, contributed by a native oxide shell and the body defects of the prepared In0.2Ga0.8As NWs, is confirmed by the constructed back-gated NWFETs. As demonstrated by photoluminescence, the bandgap of the prepared In0.2Ga0.8As NWs is 1.28 eV, offering the promise of application in near-infrared (NIR) photodetection. Under 850 nm laser illumination, the fabricated ambipolar NWFETs show extremely low dark currents of 50 pA and 0.5 pA when positive and negative gate voltages are applied, respectively. All the results demonstrate that with careful design of the surface oxide layer and the body defects, NWs are suitable for use in next-generation optoelectronic devices.
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Affiliation(s)
- Yanan Guo
- School of Microelectronics, School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, People's Republic of China
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9
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Sozen Y, Sahin H. Raman and optical characteristics of van der Waals heterostructures of single layers of GaP and GaSe: a first-principles study. Inorg Chem Front 2021. [DOI: 10.1039/d1qi00187f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/10/2023]
Abstract
Inorganic single layers of GaP and GaSe can form novel ultra-thin heterostructures displaying unique Raman and optical properties.
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Affiliation(s)
- Yigit Sozen
- Department of Photonics
- Izmir Institute of Technology
- Izmir
- Turkey
| | - Hasan Sahin
- Department of Photonics
- Izmir Institute of Technology
- Izmir
- Turkey
- ICTP-ECAR Eurasian Center for Advanced Research
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10
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Wang H, Wang A, Wang Y, Yang Z, Yang J, Han N, Chen Y. Nonpolar GaAs Nanowires Catalyzed by Cu 5As 2: Insights into As Layer Epitaxy. ACS OMEGA 2020; 5:30963-30970. [PMID: 33324804 PMCID: PMC7726767 DOI: 10.1021/acsomega.0c03817] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2020] [Accepted: 10/15/2020] [Indexed: 05/10/2023]
Abstract
Controlled synthesis of GaAs nanowires (NWs) with specific phases and orientations is important and challenging, which determines their electronic performances. Herein, single-crystalline GaAs NWs are successfully synthesized by using complementary metal-oxide semiconductor compatible Cu2O catalysts via chemical vapor deposition at an optimized temperature of 560 °C. In contrast to typically Au catalyzed GaAs NWs, the Cu2O catalyzed ones are found to grow along nonpolar orientations of zincblende <110> and <211> and wurtzite <1̅100> and <2̅110>. The Cu2O catalysts are found to change into orthorhombic Cu5As2 after the NW growth, which is also significantly distinguished from the Au-Ga catalyst alloy in the literature. The Cu5As2 alloy plays the epitaxy role in the nonpolar GaAs NW growth due to the lattice matching with the nonpolar planes of GaAs, which is verified by the atomic stack model. These nonpolar oriented GaAs NWs have minimized stacking faults, promising for the other semiconductor synthesis as well as electronic applications.
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Affiliation(s)
- Hang Wang
- State
Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School
of Metallurgical Engineering, Xi’an
University of Architecture and Technology, Xi’an 710055, P. R. China
| | - Anqi Wang
- State
Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, P. R. China
- Center
for Excellence in Regional Atmospheric Environment, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021, P. R. China
| | - Ying Wang
- Department
of Physics, School of Science, Beijing Jiaotong
University, Beijing 100044, P. R. China
| | - Zaixing Yang
- Center
of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, P. R. China
| | - Jun Yang
- School
of Metallurgical Engineering, Xi’an
University of Architecture and Technology, Xi’an 710055, P. R. China
- . Tel.: +86-13152420820
| | - Ning Han
- State
Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, P. R. China
- Center
for Excellence in Regional Atmospheric Environment, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021, P. R. China
- . Tel.: 86-10-62558356
| | - Yunfa Chen
- State
Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, P. R. China
- Center
for Excellence in Regional Atmospheric Environment, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021, P. R. China
- . Tel.: 86-10-82544896
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11
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Zhu X, Lin F, Chen X, Zhang Z, Chen X, Wang D, Tang J, Fang X, Fang D, Liao L, Wei Z. Influence of the depletion region in GaAs/AlGaAs quantum well nanowire photodetector. NANOTECHNOLOGY 2020; 31:444001. [PMID: 32585644 DOI: 10.1088/1361-6528/aba02c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In semiconductor nanowire (NW) photodetectors, the Schottky barrier formed by the contact between metal and semiconductor can act as a depletion layer. For NW structures with a smaller diameter, the depletion region is especially important to the carrier transport. We prepared a GaAs/AlGaAs quantum well NW photodetector with a two-dimensional electron-hole tube, in which the two-dimensional hole tube (2DHT) formed by the inner layer of GaAs and AlGaAs has the most important role in the regulation of carriers. By adjusting the bias voltage to vary the depth of the depletion region, we have confirmed the influence of the depletion region in a 2DHT. A significant inflection point was found in the responsivity-voltage curve at 1.5 V. By combining the depletion region and 2DHT, the responsivity of the fabricated device was increased by 18 times to 0.199 A W-1 and the detectivity is increased by 5 times to 5.8 × 1010 Jones, compared to the pure GaAs NW photodetector. Reasonable combination of depletion layer and 2DHT was proved to promote high-performance NW photodetector.
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Affiliation(s)
- Xiaotian Zhu
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, People's Republic of China
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12
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Zhu X, Lin F, Zhang Z, Chen X, Huang H, Wang D, Tang J, Fang X, Fang D, Ho JC, Liao L, Wei Z. Enhancing Performance of a GaAs/AlGaAs/GaAs Nanowire Photodetector Based on the Two-Dimensional Electron-Hole Tube Structure. NANO LETTERS 2020; 20:2654-2659. [PMID: 32101689 DOI: 10.1021/acs.nanolett.0c00232] [Citation(s) in RCA: 37] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Here, we design and engineer an axially asymmetric GaAs/AlGaAs/GaAs (G/A/G) nanowire (NW) photodetector that operates efficiently at room temperature. Based on the I-type band structure, the device can realize a two-dimensional electron-hole tube (2DEHT) structure for the substantial performance enhancement. The 2DEHT is observed to form at the interface on both sides of GaAs/AlGaAs barriers, which constructs effective pathways for both electron and hole transport in reducing the photocarrier recombination and enhancing the device photocurrent. In particular, the G/A/G NW photodetector exhibits a responsivity of 0.57 A/W and a detectivity of 1.83 × 1010 Jones, which are about 7 times higher than those of the pure GaAs NW device. The recombination probability has also been significantly suppressed from 81.8% to 13.2% with the utilization of the 2DEHT structure. All of these can evidently demonstrate the importance of the appropriate band structure design to promote photocarrier generation, separation, and collection for high-performance optoelectronic devices.
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Affiliation(s)
- Xiaotian Zhu
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Fengyuan Lin
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Zhihong Zhang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Xue Chen
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Hao Huang
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Dengkui Wang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Jilong Tang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Xuan Fang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Dan Fang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong SAR 999077, China
| | - Lei Liao
- State Key Laboratory for Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
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13
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Wang X, Pan D, Han Y, Sun M, Zhao J, Chen Q. Vis-IR Wide-Spectrum Photodetector at Room Temperature Based on p-n Junction-Type GaAs 1-xSb x/InAs Core-Shell Nanowire. ACS APPLIED MATERIALS & INTERFACES 2019; 11:38973-38981. [PMID: 31576737 DOI: 10.1021/acsami.9b13559] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Infrared (IR) detection at room temperature is very important in many fields. Nanoscale wide-spectrum photodetectors covering IR range are still rare, although they are desired in many applications, such as in integrated optoelectronic devices. Here, we report a new kind of photodetector based on p-n heterojunction-type GaAs1-xSbx/InAs core-shell nanowires. The photodetectors demonstrate high response to the lights ranging from visible light (488 nm) to short-wavelength IR (1800 nm) at room temperature under a very low bias voltage of 0.3 V. The high performance of the devices includes an ultralow dark current (32 pA at room temperature), a high response speed (0.45 ms) to 633 nm light, high responsivity to 1310 nm telecommunication light (0.12 A/W), high response even to 1800 nm light (on/off ratio of 2.5), etc. Besides, the devices also show excellent rectifying I-V characteristics (the current rectification ratio being ∼178 in a voltage range of ±0.3 V). These results suggest that the GaAs1-xSbx/InAs core-shell nanowire devices are promising for applications in nanoelectronic devices, optoelectronic devices, and integrated optoelectronic devices.
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Affiliation(s)
- Xinzhe Wang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics , Peking University , Beijing 100871 , China
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China and College of Materials Science and Opto-Electronic Technology , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Yuxiang Han
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics , Peking University , Beijing 100871 , China
| | - Mei Sun
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics , Peking University , Beijing 100871 , China
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China and College of Materials Science and Opto-Electronic Technology , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Qing Chen
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics , Peking University , Beijing 100871 , China
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14
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Chen X, Wang D, Wang T, Yang Z, Zou X, Wang P, Luo W, Li Q, Liao L, Hu W, Wei Z. Enhanced Photoresponsivity of a GaAs Nanowire Metal-Semiconductor-Metal Photodetector by Adjusting the Fermi Level. ACS APPLIED MATERIALS & INTERFACES 2019; 11:33188-33193. [PMID: 31415147 DOI: 10.1021/acsami.9b07891] [Citation(s) in RCA: 47] [Impact Index Per Article: 9.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Metal-semiconductor-metal (MSM)-structured GaAs-based nanowire photodetectors have been widely reported because they are promising as an alternative for high-performance devices. Owing to the Schottky built-in electric fields in the MSM structure photodetectors, enhancements in photoresponsivity can be realized. Thus, strengthening the built-in electric field is an efficacious way to make the detection capability better. In this study, we fabricate a single GaAs nanowire MSM photodetector with superior performance by doping-adjusting the Fermi level to strengthen the built-in electric field. An outstanding responsivity of 1175 A/W is obtained. This is two orders of magnitude better than the responsivity of the undoped sample. Scanning photocurrent mappings and simulations are performed to confirm that the enhancement in responsivity is because of the increase in the hole Schottky built-in electric field, which can separate and collect the photogenerated carriers more effectively. The eloquent evidence clearly proves that doping-adjusting the Fermi level has great potential applications in high-performance GaAs nanowire photodetectors and other functional photodetectors.
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Affiliation(s)
- Xue Chen
- State Key Laboratory of High Power Semiconductor Lasers , Changchun University of Science and Technology , Changchun 130022 , China
| | - Dengkui Wang
- State Key Laboratory of High Power Semiconductor Lasers , Changchun University of Science and Technology , Changchun 130022 , China
| | - Tuo Wang
- State Key Laboratory of High Power Semiconductor Lasers , Changchun University of Science and Technology , Changchun 130022 , China
| | - Zhenyu Yang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and Technology , Wuhan University , Wuhan 430072 , China
| | - Xuming Zou
- Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education School of Physics and Electronics , Hunan University , Changsha 410082 , China
| | - Peng Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , Shanghai 200083 , China
| | - Wenjin Luo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , Shanghai 200083 , China
| | - Qing Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , Shanghai 200083 , China
| | - Lei Liao
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and Technology , Wuhan University , Wuhan 430072 , China
- Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education School of Physics and Electronics , Hunan University , Changsha 410082 , China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , Shanghai 200083 , China
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Lasers , Changchun University of Science and Technology , Changchun 130022 , China
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15
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Abstract
Semiconductor nanowires have attracted extensive interest as one of the best-defined classes of nanoscale building blocks for the bottom-up assembly of functional electronic and optoelectronic devices over the past two decades. The article provides a comprehensive review of the continuing efforts in exploring semiconductor nanowires for the assembly of functional nanoscale electronics and macroelectronics. Specifically, we start with a brief overview of the synthetic control of various semiconductor nanowires and nanowire heterostructures with precisely controlled physical dimension, chemical composition, heterostructure interface, and electronic properties to define the material foundation for nanowire electronics. We then summarize a series of assembly strategies developed for creating well-ordered nanowire arrays with controlled spatial position, orientation, and density, which are essential for constructing increasingly complex electronic devices and circuits from synthetic semiconductor nanowires. Next, we review the fundamental electronic properties and various single nanowire transistor concepts. Combining the designable electronic properties and controllable assembly approaches, we then discuss a series of nanoscale devices and integrated circuits assembled from nanowire building blocks, as well as a unique design of solution-processable nanowire thin-film transistors for high-performance large-area flexible electronics. Last, we conclude with a brief perspective on the standing challenges and future opportunities.
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Affiliation(s)
- Chuancheng Jia
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Zhaoyang Lin
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Yu Huang
- Department of Materials Science and Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States.,California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States.,California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
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16
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Zhang Y, Saxena D, Aagesen M, Liu H. Toward electrically driven semiconductor nanowire lasers. NANOTECHNOLOGY 2019; 30:192002. [PMID: 30658345 DOI: 10.1088/1361-6528/ab000d] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Semiconductor nanowire (NW) lasers are highly promising for making new-generation coherent light sources with the advantages of ultra-small size, high efficiency, easy integration and low cost. Over the past 15 years, this area of research has been developing rapidly, with extensive reports of optically pumped lasing in various inorganic and organic semiconductor NWs. Motivated by these developments, substantial efforts are being made to make NW lasers electrically pumped, which is necessary for their practical implementation. In this review, we first categorize NW lasers according to their lasing wavelength and wavelength tunability. Then, we summarize the methods used for achieving single-mode lasing in NWs. After that, we review reports on lasing threshold reduction and the realization of electrically pumped NW lasers. Finally, we offer our perspective on future improvements and trends.
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Affiliation(s)
- Yunyan Zhang
- Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom
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17
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Abstract
Currently, it is challenging to develop new catalysts for semiconductor nanowires (NWs) growth in a complementary-metal-oxide-semiconductor (CMOS) compatible manner via a vapor-liquid-solid (VLS) mechanism. In this study, chemically synthesized Cu2O nano cubes are adopted as the catalyst for single crystalline β-Ga2O3 NWs growth in chemical vapor deposition. The growth temperature is optimized to be 750 to 800 °C. The NW diameter is controlled by tuning the sizes of Cu2O cubes in the 20 to 100 nm range with a bandgap of ~4.85 eV as measured by ultraviolet-visible absorption spectroscopy. More importantly, the catalyst tip is found to be Cu5As2, which is distinguished from those Au-catalyzed Au-Ga alloys. After a comprehensive phase diagram investigation, the β-Ga2O3 NWs are proposed to be grown by the ternary phase of Cu-As-Ga diffusing Ga into the growth frontier of the NW, where Ga react with residual oxygen to form the NWs. Afterward, Ga diminishes after growth since Ga would be the smallest component in the ternary alloy. All these results show the importance of the catalyst choice for CMOS compatible NW growth and also the potency of the ternary phase catalyst growth mode in other semiconductor NWs synthesis.
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18
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Park K, Lee J, Kim D, Seo J, Kim J, Ahn JP, Park J. Synthesis of Polytypic Gallium Phosphide and Gallium Arsenide Nanowires and Their Application as Photodetectors. ACS OMEGA 2019; 4:3098-3104. [PMID: 31459529 PMCID: PMC6648578 DOI: 10.1021/acsomega.8b03548] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2018] [Accepted: 01/04/2019] [Indexed: 05/23/2023]
Abstract
One-dimensional semiconductor nanowires often contain polytypic structures, owing to the co-existence of different crystal phases. Therefore, understanding the properties of polytypic structures is of paramount importance for many promising applications in high-performance nanodevices. Herein, we synthesized nanowires of typical III-V semiconductors, namely, gallium phosphide and gallium arsenide by using the chemical vapor transport method. The growth directions ([111] and [211]) could be switched by changing the experimental conditions, such as H2 gas flow; thus, various polytypic structures were produced simultaneously in a controlled manner. The nanobeam electron diffraction technique was employed to obtain strain mapping of the nanowires by visualizing the polytypic structures along the [111] direction. Micro-Raman spectra for individual nanowires were collected, confirming the presence of wurtzite phase in the polytypic nanowires. Further, we fabricated the photodetectors using the single nanowires, and the polytypic structures are shown to decrease the photosensitivity. Our systematic analysis provides important insight into the polytypic structures of nanowires.
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Affiliation(s)
- Kidong Park
- Department
of Chemistry, Korea University, Sejong 339-700, Korea
| | - Jinha Lee
- Department
of Chemistry, Korea University, Sejong 339-700, Korea
| | - Doyeon Kim
- Department
of Chemistry, Korea University, Sejong 339-700, Korea
| | - Jaemin Seo
- Department
of Chemistry, Korea University, Sejong 339-700, Korea
| | - Jundong Kim
- Department
of Chemistry, Korea University, Sejong 339-700, Korea
| | - Jae-Pyoung Ahn
- Advanced
Analysis Center, Korea Institute of Science
and Technology, Seoul 136-791, Korea
| | - Jeunghee Park
- Department
of Chemistry, Korea University, Sejong 339-700, Korea
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19
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Abstract
Solar energy is abundant, clean, and renewable, making it an ideal energy source. Solar cells are a good option to harvest this energy. However, it is difficult to balance the cost and efficiency of traditional thin-film solar cells, whereas nanowires (NW) are far superior in making high-efficiency low-cost solar cells. Therefore, the NW solar cell has attracted great attention in recent years and is developing rapidly. Here, we review the great advantages, recent breakthroughs, novel designs, and remaining challenges of NW solar cells. Special attention is given to (but not limited to) the popular semiconductor NWs for solar cells, in particular, Si, GaAs(P), and InP.
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20
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Alanis JA, Lysevych M, Burgess T, Saxena D, Mokkapati S, Skalsky S, Tang X, Mitchell P, Walton AS, Tan HH, Jagadish C, Parkinson P. Optical Study of p-Doping in GaAs Nanowires for Low-Threshold and High-Yield Lasing. NANO LETTERS 2019; 19:362-368. [PMID: 30525674 DOI: 10.1021/acs.nanolett.8b04048] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Semiconductor nanowires suffer from significant non-radiative surface recombination; however, heavy p-type doping has proven to be a viable option to increase the radiative recombination rate and, hence, quantum efficiency of emission, allowing the demonstration of room-temperature lasing. Using a large-scale optical technique, we have studied Zn-doped GaAs nanowires to understand and quantify the effect of doping on growth and lasing properties. We measure the non-radiative recombination rate ( knr) to be (0.14 ± 0.04) ps-1 by modeling the internal quantum efficiency (IQE) as a function of doping level. By applying a correlative method, we identify doping and nanowire length as key controllable parameters determining lasing behavior, with reliable room-temperature lasing occurring for p ≳ 3 × 1018 cm-3 and lengths of ≳4 μm. We report a best-in-class core-only near-infrared nanowire lasing threshold of ∼10 μJ cm-2, and using a data-led filtering step, we present a method to simply identify subsets of nanowires with over 90% lasing yield.
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Affiliation(s)
| | | | | | - Dhruv Saxena
- The Blackett Laboratory, Department of Physics , Imperial College London , London SW7 2AZ , United Kingdom
| | - Sudha Mokkapati
- School of Physics and Astronomy and the Institute for Compound Semiconductors , Cardiff University , Cardiff , CF10 3AT , United Kingdom
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21
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Zhang Y, Sanchez AM, Aagesen M, Huo S, Fonseka HA, Gott JA, Kim D, Yu X, Chen X, Xu J, Li T, Zeng H, Boras G, Liu H. Growth and Fabrication of High-Quality Single Nanowire Devices with Radial p-i-n Junctions. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1803684. [PMID: 30556282 DOI: 10.1002/smll.201803684] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2018] [Revised: 11/14/2018] [Indexed: 06/09/2023]
Abstract
Nanowires (NWs) with radial p-i-n junction have advantages, such as large junction area and small influence from the surface states, which can lead to highly efficient material use and good device quantum efficiency. However, it is difficult to make high-quality core-shell NW devices, especially single NW devices. Here, the key factors during the growth and fabrication process that influence the quality of single core-shell p-i-n NW devices are studied using GaAs(P) NW photovoltaics as an example. By p-doping and annealing, good ohmic contact is achieved on NWs with a diameter as small as 50-60 nm. Single NW photovoltaics are subsequently developed and a record fill factor of 80.5% is shown. These results bring valuable information for making single NW devices, which can further benefit the development of high-density integration circuits.
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Affiliation(s)
- Yunyan Zhang
- Department of Electronic and Electrical Engineering, University College London, London, WC1E 7JE, UK
| | - Ana M Sanchez
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
| | - Martin Aagesen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100, Copenhagen, Denmark
| | - Suguo Huo
- London Centre for Nanotechnology, University College London, London, WC1H 0AH, UK
| | - H Aruni Fonseka
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
| | - James A Gott
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
| | - Dongyoung Kim
- Department of Electronic and Electrical Engineering, University College London, London, WC1E 7JE, UK
| | - Xuezhe Yu
- Department of Electronic and Electrical Engineering, University College London, London, WC1E 7JE, UK
| | - Xingyou Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Jia Xu
- Department of Electronic and Electrical Engineering, University College London, London, WC1E 7JE, UK
| | - Tianyi Li
- London Centre for Nanotechnology, University College London, London, WC1H 0AH, UK
| | - Haotian Zeng
- Department of Electronic and Electrical Engineering, University College London, London, WC1E 7JE, UK
| | - Giorgos Boras
- Department of Electronic and Electrical Engineering, University College London, London, WC1E 7JE, UK
| | - Huiyun Liu
- Department of Electronic and Electrical Engineering, University College London, London, WC1E 7JE, UK
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