1
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Surana M, Ananthakrishnan G, Poss MM, Yaacoub JJ, Zhang K, Ahmed T, Admal NC, Pochet P, Johnson HT, Tawfick S. Strain-Driven Faceting of Graphene-Catalyst Interfaces. NANO LETTERS 2023; 23:1659-1665. [PMID: 36745111 DOI: 10.1021/acs.nanolett.2c03911] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The interfacial interaction of 2D materials with the substrate leads to striking surface faceting affecting its electronic properties. Here, we quantitatively study the orientation-dependent facet topographies observed on the catalyst under graphene using electron backscatter diffraction and atomic force microscopy. The original flat catalyst surface transforms into two facets: a low-energy low-index surface, e.g. (111), and a vicinal (high-index) surface. The critical role of graphene strain, besides anisotropic interfacial energy, in forming the observed topographies is revealed by molecular simulations. These insights are applicable to other 2D/3D heterostructures.
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Affiliation(s)
- Mitisha Surana
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana61801, Illinois, USA
| | - Ganesh Ananthakrishnan
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana61801, Illinois, USA
| | - Matthew M Poss
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana61801, Illinois, USA
| | - Jad Jean Yaacoub
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana61801, Illinois, USA
| | - Kaihao Zhang
- The Hong Kong University of Science and Technology, Guangzhou999077, Hong Kong, China
| | - Tusher Ahmed
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana61801, Illinois, USA
| | - Nikhil Chandra Admal
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana61801, Illinois, USA
| | - Pascal Pochet
- Department of Physics, IriG, Univ. Grenoble-Alpes and CEA, GrenobleF-38054, France
| | - Harley T Johnson
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana61801, Illinois, USA
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana61801, Illinois, USA
| | - Sameh Tawfick
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana61801, Illinois, USA
- The Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, Illinois61801, USA
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2
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Cheng G, Jin Z, Zhao C, Zhou C, Li B, Wang J. Hexagonal Network of Photocurrent Enhancement in Few-Layer Graphene/InGaN Quantum Dot Junctions. NANO LETTERS 2022; 22:6964-6971. [PMID: 36006796 DOI: 10.1021/acs.nanolett.2c01766] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Strain in two-dimensional (2D) materials has attracted particular attention because of the remarkable modification of electronic and optical properties. However, emergent electromechanical phenomena and hidden mechanisms, such as strain-superlattice-induced topological states or flexoelectricity under strain gradient, remain under debate. Here, using scanning photocurrent microscopy, we observe significant photocurrent enhancement in hybrid vertical junction devices made of strained few-layer graphene and InGaN quantum dots. Optoelectronic response and photoluminescence measurements demonstrate a possible mechanism closely tied to the flexoelectric effect in few-layer graphene, where the strain can induce a lateral built-in electric field and assist the separation of electron-hole pairs. Photocurrent mapping reveals an unprecedentedly ordered hexagonal network, suggesting the potential to create a superlattice by strain engineering. Our work provides insights into optoelectronic phenomena in the presence of strain and paves the way for practical applications associated with strained 2D materials.
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Affiliation(s)
- Guanghui Cheng
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zijing Jin
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong
| | - Chunyu Zhao
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong
| | - Chengjie Zhou
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong
| | - Baikui Li
- College of Physics and Optoelectronic Engineering, Shenzhen University, 3688 Nanhai Ave, Shenzhen 518060, China
| | - Jiannong Wang
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong
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3
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Li X, Wu G, Zhang L, Huang D, Li Y, Zhang R, Li M, Zhu L, Guo J, Huang T, Shen J, Wei X, Yu KM, Dong J, Altman MS, Ruoff RS, Duan Y, Yu J, Wang Z, Huang X, Ding F, Shi H, Tang W. Single-crystal two-dimensional material epitaxy on tailored non-single-crystal substrates. Nat Commun 2022; 13:1773. [PMID: 35365650 PMCID: PMC8975884 DOI: 10.1038/s41467-022-29451-w] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/05/2021] [Accepted: 03/15/2022] [Indexed: 01/19/2023] Open
Abstract
The use of single-crystal substrates as templates for the epitaxial growth of single-crystal overlayers has been a primary principle of materials epitaxy for more than 70 years. Here we report our finding that, though counterintuitive, single-crystal 2D materials can be epitaxially grown on twinned crystals. By establishing a geometric principle to describe 2D materials alignment on high-index surfaces, we show that 2D material islands grown on the two sides of a twin boundary can be well aligned. To validate this prediction, wafer-scale Cu foils with abundant twin boundaries were synthesized, and on the surfaces of these polycrystalline Cu foils, we have successfully grown wafer-scale single-crystal graphene and hexagonal boron nitride films. In addition, to greatly increasing the availability of large area high-quality 2D single crystals, our discovery also extends the fundamental understanding of materials epitaxy.
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Affiliation(s)
- Xin Li
- Chongqing Key Laboratory of Multi-Scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, P.R. China.,University of Chinese Academy of Sciences, No.19(A) Yuquan Road, Shijingshan District, Beijing, 100049, P.R. China
| | - Guilin Wu
- International Joint Laboratory for Light Alloys (MOE), College of Materials Science and Engineering, Chongqing University, Chongqing, 400044, P.R. China.,Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P.R. China
| | - Leining Zhang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea.,Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Deping Huang
- Chongqing Key Laboratory of Multi-Scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, P.R. China
| | - Yunqing Li
- Chongqing Key Laboratory of Multi-Scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, P.R. China.,University of Chinese Academy of Sciences, No.19(A) Yuquan Road, Shijingshan District, Beijing, 100049, P.R. China
| | - Ruiqi Zhang
- Chongqing Key Laboratory of Multi-Scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, P.R. China.,University of Chinese Academy of Sciences, No.19(A) Yuquan Road, Shijingshan District, Beijing, 100049, P.R. China
| | - Meng Li
- Electron Microscope Center, Chongqing University, Chongqing, 400044, PR China
| | - Lin Zhu
- Electron Microscope Center, Chongqing University, Chongqing, 400044, PR China
| | - Jing Guo
- International Joint Laboratory for Light Alloys (MOE), College of Materials Science and Engineering, Chongqing University, Chongqing, 400044, P.R. China
| | - Tianlin Huang
- International Joint Laboratory for Light Alloys (MOE), College of Materials Science and Engineering, Chongqing University, Chongqing, 400044, P.R. China
| | - Jun Shen
- Chongqing Key Laboratory of Multi-Scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, P.R. China
| | - Xingzhan Wei
- Chongqing Key Laboratory of Multi-Scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, P.R. China
| | - Ka Man Yu
- Department of Physics, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong, PR China
| | - Jichen Dong
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Michael S Altman
- Department of Physics, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong, PR China
| | - Rodney S Ruoff
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea.,Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.,School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.,School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Yinwu Duan
- Chongqing Key Laboratory of Graphene Film Manufacturing, Chongqing, 401329, P.R. China
| | - Jie Yu
- Chongqing Key Laboratory of Graphene Film Manufacturing, Chongqing, 401329, P.R. China
| | - Zhujun Wang
- Shanghai Tech University, 93 Middle Huaxia Road, Pudong, Shanghai, 201210, P.R. China
| | - Xiaoxu Huang
- International Joint Laboratory for Light Alloys (MOE), College of Materials Science and Engineering, Chongqing University, Chongqing, 400044, P.R. China. .,Shenyang National Laboratory for Materials Science, Chongqing University, Chongqing, 400044, P.R. China.
| | - Feng Ding
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea. .,Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
| | - Haofei Shi
- Chongqing Key Laboratory of Multi-Scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, P.R. China. .,University of Chinese Academy of Sciences, No.19(A) Yuquan Road, Shijingshan District, Beijing, 100049, P.R. China.
| | - Wenxin Tang
- Electron Microscope Center, Chongqing University, Chongqing, 400044, PR China
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4
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Cui G, Peng Z, Chen X, Cheng Y, Lu L, Cao S, Ji S, Qu G, Zhao L, Wang S, Wang S, Li Y, Ci H, Li M, Liu Z. Freestanding Graphene Fabric Film for Flexible Infrared Camouflage. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105004. [PMID: 34914865 PMCID: PMC8844486 DOI: 10.1002/advs.202105004] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/04/2021] [Revised: 11/15/2021] [Indexed: 06/14/2023]
Abstract
Graphene films, fabricated by chemical vapor deposition (CVD) method, have exhibited superiorities in high crystallinity, thickness controllability, and large-scale uniformity. However, most synthesized graphene films are substrate-dependent, and usually fragile for practical application. Herein, a freestanding graphene film is prepared based on the CVD route. By using the etchable fabric substrate, a large-scale papyraceous freestanding graphene fabric film (FS-GFF) is obtained. The electrical conductivity of FS-GFF can be modulated from 50 to 2800 Ω sq-1 by tailoring the graphene layer thickness. Moreover, the FS-GFF can be further attached to various shaped objects by a simple rewetting manipulation with negligible changes of electric conductivity. Based on the advanced fabric structure, excellent electrical property, and high infrared emissivity, the FS-GFF is thus assembled into a flexible device with tunable infrared emissivity, which can achieve the adaptive camouflage ability in complicated backgrounds. This work provides an infusive insight into the fabrication of large-scale freestanding graphene fabric films, while promoting the exploration on the flexible infrared camouflage textiles.
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Affiliation(s)
- Guang Cui
- Beijing System Design Institute of Mechanical‐Electrical EngineeringBeijing100871P. R. China
- Center for Nanochemistry (CNC)Beijing Science and Engineering Center for NanocarbonsCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871P. R. China
- Beijing Graphene Institute (BGI)Beijing100095P. R. China
| | - Zhe Peng
- Shandong Academy of Agricultural SciencesJinan250100P. R. China
| | - Xiaoyan Chen
- Beijing System Design Institute of Mechanical‐Electrical EngineeringBeijing100871P. R. China
| | - Yi Cheng
- Center for Nanochemistry (CNC)Beijing Science and Engineering Center for NanocarbonsCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871P. R. China
- Beijing Graphene Institute (BGI)Beijing100095P. R. China
| | - Lin Lu
- Beijing System Design Institute of Mechanical‐Electrical EngineeringBeijing100871P. R. China
| | - Shubo Cao
- Beijing System Design Institute of Mechanical‐Electrical EngineeringBeijing100871P. R. China
| | - Sudong Ji
- Beijing System Design Institute of Mechanical‐Electrical EngineeringBeijing100871P. R. China
| | - Guoxin Qu
- Beijing System Design Institute of Mechanical‐Electrical EngineeringBeijing100871P. R. China
| | - Lu Zhao
- Beijing System Design Institute of Mechanical‐Electrical EngineeringBeijing100871P. R. China
| | - Shaokai Wang
- Ningbo Innovation Research InstituteBeihang UniversityNingbo315800China
| | - Shida Wang
- Beijing System Design Institute of Mechanical‐Electrical EngineeringBeijing100871P. R. China
| | - Yizhen Li
- Beijing System Design Institute of Mechanical‐Electrical EngineeringBeijing100871P. R. China
| | - Haina Ci
- Beijing Graphene Institute (BGI)Beijing100095P. R. China
- College of EnergySoochow Institute for Energy and Materials InnovationS (SIEMIS)Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy TechnologiesSoochow UniversitySuzhou215006P. R. China
- School of Mechanical and Electrical EngineeringQingdao University of Science and TechnologyQingdao266061P. R. China
| | - Maoyuan Li
- Beijing System Design Institute of Mechanical‐Electrical EngineeringBeijing100871P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC)Beijing Science and Engineering Center for NanocarbonsCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871P. R. China
- Beijing Graphene Institute (BGI)Beijing100095P. R. China
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5
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Sun Y, Kirimoto K, Takase T, Eto D, Yoshimura S, Tsuru S. Possible pair-graphene structures govern the thermodynamic properties of arbitrarily stacked few-layer graphene. Sci Rep 2021; 11:23401. [PMID: 34862468 PMCID: PMC8642524 DOI: 10.1038/s41598-021-02995-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/29/2021] [Accepted: 11/24/2021] [Indexed: 11/23/2022] Open
Abstract
The thermodynamic properties of few-layer graphene arbitrarily stacked on LiNbO3 crystal were characterized by measuring the parameters of a surface acoustic wave as it passed through the graphene/LiNbO3 interface. The parameters considered included the propagation velocity, frequency, and attenuation. Mono-, bi-, tri-, tetra-, and penta-layer graphene samples were prepared by transferring individual graphene layers onto LiNbO3 crystal surfaces at room temperature. Intra-layer lattice deformation was observed in all five samples. Further inter-layer lattice deformation was confirmed in samples with odd numbers of layers. The inter-layer lattice deformation caused stick-slip friction at the graphene/LiNbO3 interface near the temperature at which the layers were stacked. The thermal expansion coefficient of the deformed few-layer graphene transitioned from positive to negative as the number of layers increased. To explain the experimental results, we proposed a few-layer graphene even-odd layer number stacking order effect. A stable pair-graphene structure formed preferentially in the few-layer graphene. In even-layer graphene, the pair-graphene structure formed directly on the LiNbO3 substrate. Contrasting phenomena were noted with odd-layer graphene. Single-layer graphene was bound to the substrate after the stable pair-graphene structure was formed. The pair-graphene structure affected the stacking order and inter-layer lattice deformation of few-layer graphene substantially.
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Affiliation(s)
- Yong Sun
- Department of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, 1-1 Senshuimachi, Tobata, Kitakyushu-City, Fukuoka, 804-8550, Japan.
| | - Kenta Kirimoto
- Department of Electrical and Electronic Engineering, Kitakyushu National College of Technology, 5-20-1 shii, Kokuraminami, Kitakyushu-City, Fukuoka, 802-0985, Japan
| | - Tsuyoshi Takase
- Department of Humanities, Baiko Gakuin University, 1-1-1 Koyocho, Shimonoseki-City, Yamaguchi, 750-8511, Japan
| | - Daichi Eto
- Department of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, 1-1 Senshuimachi, Tobata, Kitakyushu-City, Fukuoka, 804-8550, Japan
| | - Shohei Yoshimura
- Department of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, 1-1 Senshuimachi, Tobata, Kitakyushu-City, Fukuoka, 804-8550, Japan
| | - Shota Tsuru
- Department of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, 1-1 Senshuimachi, Tobata, Kitakyushu-City, Fukuoka, 804-8550, Japan
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6
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Liu F, Dong J, Kim NY, Lee Z, Ding F. Growth and Selective Etching of Twinned Graphene on Liquid Copper Surface. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2103484. [PMID: 34514727 DOI: 10.1002/smll.202103484] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2021] [Revised: 08/17/2021] [Indexed: 06/13/2023]
Abstract
Although grain boundaries (GBs) in two-dimensional (2D) materials have been extensively observed and characterized, their formation mechanism still remains unexplained. Here a general model has reported to elucidate the mechanism of formation of GBs during 2D materials growth. Based on our model, a general method is put forward to synthesize twinned 2D materials on a liquid substrate. Using graphene growth on liquid Cu surface as an example, the growth of twinned graphene has been demonstrated successfully, in which all the GBs are ultra-long straight twin boundaries. Furthermore, well-defined twin boundaries (TBs) are found in graphene that can be selectively etched by hydrogen gas due to the preferential adsorption of hydrogen atoms at high-energy twins. This study thus reveals the formation mechanism of GBs in 2D materials during growth and paves the way to grow various 2D nanostructures with controlled GBs.
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Affiliation(s)
- Fengning Liu
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Jichen Dong
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, South Korea
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Na Yeon Kim
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Zonghoon Lee
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
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7
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Single-crystal, large-area, fold-free monolayer graphene. Nature 2021; 596:519-524. [PMID: 34433942 DOI: 10.1038/s41586-021-03753-3] [Citation(s) in RCA: 100] [Impact Index Per Article: 33.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/18/2021] [Accepted: 06/22/2021] [Indexed: 11/08/2022]
Abstract
Chemical vapour deposition of carbon-containing precursors on metal substrates is currently the most promising route for the scalable synthesis of large-area, high-quality graphene films1. However, there are usually some imperfections present in the resulting films: grain boundaries, regions with additional layers (adlayers), and wrinkles or folds, all of which can degrade the performance of graphene in various applications2-7. There have been numerous studies on ways to eliminate grain boundaries8,9 and adlayers10-12, but graphene folds have been less investigated. Here we explore the wrinkling/folding process for graphene films grown from an ethylene precursor on single-crystal Cu-Ni(111) foils. We identify a critical growth temperature (1,030 kelvin) above which folds will naturally form during the subsequent cooling process. Specifically, the compressive stress that builds up owing to thermal contraction during cooling is released by the abrupt onset of step bunching in the foil at about 1,030 kelvin, triggering the formation of graphene folds perpendicular to the step edge direction. By restricting the initial growth temperature to between 1,000 kelvin and 1,030 kelvin, we can produce large areas of single-crystal monolayer graphene films that are high-quality and fold-free. The resulting films show highly uniform transport properties: field-effect transistors prepared from these films exhibit average room-temperature carrier mobilities of around (7.0 ± 1.0) × 103 centimetres squared per volt per second for both holes and electrons. The process is also scalable, permitting simultaneous growth of graphene of the same quality on multiple foils stacked in parallel. After electrochemical transfer of the graphene films from the foils, the foils themselves can be reused essentially indefinitely for further graphene growth.
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8
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Wang J, Han M, Wang Q, Ji Y, Zhang X, Shi R, Wu Z, Zhang L, Amini A, Guo L, Wang N, Lin J, Cheng C. Strained Epitaxy of Monolayer Transition Metal Dichalcogenides for Wrinkle Arrays. ACS NANO 2021; 15:6633-6644. [PMID: 33819027 DOI: 10.1021/acsnano.0c09983] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Wrinkling two-dimensional (2D) transition metal dichalcogenides (TMDCs) provides a mechanism to adjust the physical and chemical properties as per need. Traditionally, TMDCs wrinkles achieved by transferring exfoliated materials on prestretched polymer suffer from poor control and limited sample area, which significantly hinders desirable applications. Herein, we fabricate large-area monolayer TMDCs wrinkle arrays directly on the m-quartz substrate using strained epitaxy. The uniaxial thermal expansion coefficient mismatch between the substrate and TMDCs materials enables the generation of large uniaxial thermal strain. By quenching the TMDCs after growth, this uniaxial thermal strain can be quickly released as a form of wrinkle arrays along the [0001]quartz direction. Using WS2 as a model system, the size of as-grown wrinkles can be finely modulated within sub-100 nm by changing the quenching temperature. These WS2 wrinkles can be locally folded and form various multilayer structures with odd layer numbers during the transfer process. Besides, the corrugated structures in WS2 wrinkles induce significant changes to optical properties including anisotropic Raman response, enhanced photoluminescence, and second harmonic generation emissions. Furthermore, these wrinkle arrays exhibit enhanced chemical reactivity that can be selectively engineered to ribbon arrays with improved electrocatalytic performance. The developed strategy of strained epitaxy here should enable flexibility in the design of more sophisticated 2D-based structures, offering a simple but effective way toward the modulation of properties with enhanced performances.
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Affiliation(s)
- Jingwei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
- Department of Physics, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Mengjiao Han
- Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Qun Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Yaqiang Ji
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Xian Zhang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Run Shi
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
- Department of Physics, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Zefei Wu
- Department of Physics, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Liang Zhang
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Abbas Amini
- Center for Infrastructure Engineering, Western Sydney University, Kingswood, NSW 2751, Australia
| | - Liang Guo
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Ning Wang
- Department of Physics, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, China
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9
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10
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Li Y, Sun L, Liu H, Wang Y, Liu Z. Preparation of single-crystal metal substrates for the growth of high-quality two-dimensional materials. Inorg Chem Front 2021. [DOI: 10.1039/d0qi00923g] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/15/2023]
Abstract
Recent advances on preparing single-crystal metals and their crucial roles in controlled growth of high-quality 2D materials are reviewed.
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Affiliation(s)
- Yanglizhi Li
- Center for Nanochemistry
- Beijing Science and Engineering Center for Nanocarbons
- Beijing National Laboratory for Molecular Sciences
- College of Chemistry and Molecular Engineering
- Peking University
| | - Luzhao Sun
- Center for Nanochemistry
- Beijing Science and Engineering Center for Nanocarbons
- Beijing National Laboratory for Molecular Sciences
- College of Chemistry and Molecular Engineering
- Peking University
| | - Haiyang Liu
- Center for Nanochemistry
- Beijing Science and Engineering Center for Nanocarbons
- Beijing National Laboratory for Molecular Sciences
- College of Chemistry and Molecular Engineering
- Peking University
| | - Yuechen Wang
- Center for Nanochemistry
- Beijing Science and Engineering Center for Nanocarbons
- Beijing National Laboratory for Molecular Sciences
- College of Chemistry and Molecular Engineering
- Peking University
| | - Zhongfan Liu
- Center for Nanochemistry
- Beijing Science and Engineering Center for Nanocarbons
- Beijing National Laboratory for Molecular Sciences
- College of Chemistry and Molecular Engineering
- Peking University
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11
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Braeuninger-Weimer P, Burton OJ, Zeller P, Amati M, Gregoratti L, Weatherup RS, Hofmann S. Crystal Orientation Dependent Oxidation Modes at the Buried Graphene-Cu Interface. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2020; 32:7766-7776. [PMID: 32982043 PMCID: PMC7513576 DOI: 10.1021/acs.chemmater.0c02296] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/01/2020] [Revised: 08/25/2020] [Indexed: 06/11/2023]
Abstract
We combine spatially resolved scanning photoelectron spectroscopy with confocal Raman and optical microscopy to reveal how the oxidation of the buried graphene-Cu interface relates to the Cu crystallographic orientation. We analyze over 100 different graphene covered Cu (high and low index) orientations exposed to air for 2 years. Four general oxidation modes are observed that can be mapped as regions onto the polar plot of Cu surface orientations. These modes are (1) complete, (2) irregular, (3) inhibited, and (4) enhanced wrinkle interface oxidation. We present a comprehensive characterization of these modes, consider the underlying mechanisms, compare air and water mediated oxidation, and discuss this in the context of the diverse prior literature in this area. This understanding incorporates effects from across the wide parameter space of 2D material interface engineering, relevant to key challenges in their emerging applications, ranging from scalable transfer to electronic contacts, encapsulation, and corrosion protection.
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Affiliation(s)
| | - Oliver J. Burton
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Patrick Zeller
- Elettra-Sincrotrone
Trieste S.C.p.A., AREA Science Park, S.S. 14 km 163.5, 34149 Trieste, Italy
| | - Matteo Amati
- Elettra-Sincrotrone
Trieste S.C.p.A., AREA Science Park, S.S. 14 km 163.5, 34149 Trieste, Italy
| | - Luca Gregoratti
- Elettra-Sincrotrone
Trieste S.C.p.A., AREA Science Park, S.S. 14 km 163.5, 34149 Trieste, Italy
| | - Robert S. Weatherup
- Department
of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United
Kingdom
| | - Stephan Hofmann
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
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12
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Deng B, Hou Y, Liu Y, Khodkov T, Goossens S, Tang J, Wang Y, Yan R, Du Y, Koppens FHL, Wei X, Zhang Z, Liu Z, Peng H. Growth of Ultraflat Graphene with Greatly Enhanced Mechanical Properties. NANO LETTERS 2020; 20:6798-6806. [PMID: 32787178 DOI: 10.1021/acs.nanolett.0c02785] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Graphene grown on Cu by chemical vapor deposition is rough due to the surface roughening of Cu for releasing interfacial thermal stress and/or graphene bending energy. The roughness degrades the electrical conductance and mechanical strength of graphene. Here, by using vicinal Cu(111) and flat Cu(111) as model substrates, we investigated the critical role of original surface topography on the surface deformation of Cu covered by graphene. We demonstrated that terrace steps on vicinal Cu(111) dominate the formation of step bunches (SBs). Atomically flat graphene with roughness down to 0.2 nm was grown on flat Cu(111) films. When SB-induced ripples were avoided, as-grown ultraflat graphene maintained its flat feature after transfer. The ultraflat graphene exhibited extraordinary mechanical properties with Young's modulus ≈ 940 GPa and strength ≈ 117 GPa, comparable to mechanical exfoliated ones. Molecular dynamics simulation revealed the mechanism of softened elastic response and weakened strength of graphene with rippled structures.
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Affiliation(s)
- Bing Deng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Yuan Hou
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei, Anhui 230027, China
| | - Ying Liu
- State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871, China
- Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing 100871, China
| | - Tymofiy Khodkov
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Stijin Goossens
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Jilin Tang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Yani Wang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Rui Yan
- Beijing Graphene Institute (BGI), Beijing 100094, China
| | - Yin Du
- Beijing Graphene Institute (BGI), Beijing 100094, China
| | - Frank H L Koppens
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
- ICREA Institució Catalana de Recerca i Estudis Avançats, Barcelona 08010, Spain
| | - Xiaoding Wei
- State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871, China
- Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing 100871, China
| | - Zhong Zhang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Beijing Graphene Institute (BGI), Beijing 100094, China
| | - Hailin Peng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Beijing Graphene Institute (BGI), Beijing 100094, China
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13
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Lee U, Han Y, Lee S, Kim JS, Lee YH, Kim UJ, Son H. Time Evolution Studies on Strain and Doping of Graphene Grown on a Copper Substrate Using Raman Spectroscopy. ACS NANO 2020; 14:919-926. [PMID: 31841304 DOI: 10.1021/acsnano.9b08205] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The enhanced growth of Cu oxides underneath graphene grown on a Cu substrate has been of great interest to many groups. In this work, the strain and doping status of graphene, based on the gradual growth of Cu oxides from underneath, were systematically studied using time evolution Raman spectroscopy. The compressive strain to graphene, due to the thermal expansion coefficient difference between graphene and the Cu substrate, was almost released by the nonuniform Cu2O growth; however, slight tensile strain was exerted. This induced p-doping in the graphene with a carrier density up to 1.7 × 1013 cm-2 when it was exposed to air for up to 30 days. With longer exposure to ambient conditions (>1 year), we observed that graphene/Cu2O hybrid structures significantly slow down the oxidation compared to that using a bare Cu substrate. The thickness of the CuO layer on the bare Cu substrate was increased to approximately 270 nm. These findings were confirmed through white light interference measurements and scanning electron microscopy.
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Affiliation(s)
- Ukjae Lee
- School of Integrative Engineering , Chung-Ang University , Seoul 06974 , Republic of Korea
| | - Yoojoong Han
- School of Integrative Engineering , Chung-Ang University , Seoul 06974 , Republic of Korea
- Nano Technology Division , NANOBASE Inc. , Seoul 08502 , Republic of Korea
| | - Sanghyub Lee
- Center for Integrated Nanostructure Physics , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Jun Suk Kim
- Center for Integrated Nanostructure Physics , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Un Jeong Kim
- Imaging Device Laboratory , Samsung Advanced Institute of Technology , Suwon , Gyeonggi-do 16419 , Republic of Korea
| | - Hyungbin Son
- School of Integrative Engineering , Chung-Ang University , Seoul 06974 , Republic of Korea
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14
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Deng B, Liu Z, Peng H. Toward Mass Production of CVD Graphene Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1800996. [PMID: 30277604 DOI: 10.1002/adma.201800996] [Citation(s) in RCA: 78] [Impact Index Per Article: 15.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2018] [Revised: 06/14/2018] [Indexed: 05/09/2023]
Abstract
Chemical vapor deposition (CVD) is considered to be an efficient method for fabricating large-area and high-quality graphene films due to its excellent controllability and scalability. Great efforts have been made to control the growth of graphene to achieve large domain sizes, uniform layers, fast growth, and low synthesis temperatures. Some attempts have been made by both the scientific community and startup companies to mass produce graphene films; however, there is a large difference in the quality of graphene synthesized on a laboratory scale and an industrial scale. Here, recent progress toward the mass production of CVD graphene films is summarized, including the manufacturing process, equipment, and critical process parameters. Moreover, the large-scale homogeneity of graphene films and fast characterization methods are also discussed, which are crucial for quality control in mass production.
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Affiliation(s)
- Bing Deng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100094, China
| | - Hailin Peng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100094, China
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