Strain-Mediated Phase Stabilization: A New Strategy for Ultrastable α-CsPbI3 Perovskite by Nanoconfined Growth

Sculpting the Electronic Nano-Terrain on a Perovskite Film for Efficient Charge Transport

Nanopatterned halide perovskites have emerged to improve the performance of optoelectronic devices by controlling the crystallographic and optical properties via morphological modification. However, the correlation between the photophysical property and morphology transformation in nanopatterned perovskite films remains elusive, which hinders the rational design of nanopatterned halide perovskites for optoelectronic devices. In this study, we employed nanoimprinting lithography on a perovskite film to exert a precise control over grain growth and manipulate electronic structures at the level of individual grains. Surface-selective fluorescence lifetime imaging microscopy (FLIM) analyzes the spatiotemporally disentangled geometrical variations in carrier recombination rate and band structure modulation according to different pattern morphologies. Consequently, the stereoscopic mechanism of confined grain growth was unveiled, highlighting the quantitative grain size-based parameters that are crucial for nanoscale material engineering. Notably, the pattern-induced reduction of effective charge mass enabled exclusive control over the subdiffusive carrier transport dynamics on perovskite surfaces, ultimately realizing the surface-selective perovskite photodetectors. The implications of this study are expected to provide valuable guidelines, inspiring innovative design protocols for advancing the next-generation optoelectronic technologies.

Surface termination and strain-induced modulation of the structure and electronic properties in 2D perovskites (Cs2BCl4 & CsB2Cl5, B = Pb, Sn): a first-principles study

Two-dimensional (2D) halide perovskites have demonstrated impressive long-term stability and superior device performance as compared to their three-dimensional (3D) counterparts. The potential of 2D halide perovskites for advanced photovoltaic applications can be enhanced by an understanding of how external factors like strain could be used to tune their optoelectronic properties. This study explores the effects of biaxial strain on the structure and electronic transport properties of 2D halide perovskites, focusing on the lowest energy (001) surfaces of (Cs2BCl4 and CsB2Cl5, B = Pb or Sn) with CsCl and BCl2 terminations. Using first-principles calculations, we find that the lower energy CsCl terminated surface, resulting in Cs2BCl4, couples strongly with biaxial strain. This termination shows bandgap modulations from approximately 1.5 eV to 1.8 eV for Cs2PbCl4 and 1.2 eV to 1.5 eV for Cs2SnCl4 with biaxial strain. Within the acoustic deformation potential theory, we compute hole mobilities, and find substantial enhancements of approximately 80% for Pb-based and 50% for Sn-based systems, thereby emphasizing the potential of strain engineering to further optimize charge transport properties in 2D halide perovskites.

Controllable Black-to-Yellow Phase Transition by Tuning the Lattice Symmetry in Perovskite Quantum Dots

The black-to-yellow phase transition in perovskite quantum dots (QDs) is more complex than in bulk perovskites, regarding the role of surface energy. Here, with the assistance of in situ grazing-incidence wide-angle and small-angle X-ray scattering (GIWAXS/GISAXS), distinct phase behaviors of cesium lead iodide (CsPbI3 ) QD films under two different temperature profiles-instant heating-up (IHU) and slow heating-up (SHU) is investigated. The IHU process can cause the phase transition from black phase to yellow phase, while under the SHU process, the majority remains in black phase. Detailed studies and structural refinement analysis reveal that the phase transition is triggered by the removal of surface ligands, which switches the energy landscape. The lattice symmetry determines the transition rate and the coexistence black-to-yellow phase ratio. The SHU process allows longer relaxation time for a more ordered QD packing, which helps sustain the lattice symmetry and stabilizes the black phase. Therefore, one can use the lattice symmetry as a general index to monitor the CsPbI3 QD phase transition and finetune the coexistence black-to-yellow phase ratio for niche applications.

Taming Multiscale Structural Complexity in Porous Skeletons: From Open Framework Materials to Micro/Nanoscaffold Architectures

Recent developments in the design and synthesis of more and more sophisticated organic building blocks with controlled structures and physical properties, combined with the emergence of novel assembly modes and nanofabrication methods, make it possible to tailor unprecedented structurally complex porous systems with precise multiscale control over their architectures and functions. By tuning their porosity from the nanoscale to microscale, a wide range of functional materials can be assembled, including open frameworks and micro/nanoscaffold architectures. During the last two decades, significant progress is made on the generation and optimization of advanced porous systems, resulting in high-performance multifunctional scaffold materials and novel device configurations. In this perspective, a critical analysis is provided of the most effective methods for imparting controlled physical and chemical properties to multifunctional porous skeletons. The future research directions that underscore the role of skeleton structures with varying physical dimensions, from molecular-level open frameworks (<10 nm) to supramolecular scaffolds (10-100 nm) and micro/nano scaffolds (>100 nm), are discussed. The limitations, challenges, and opportunities for potential applications of these multifunctional and multidimensional material systems are also evaluated in particular by addressing the greatest challenges that the society has to face.

Molecular-Switch-Embedded Solution-Processed Semiconductors

Recent improvements in the performance of solution-processed semiconductor materials and optoelectronic devices have shifted research interest to the diversification/advancement of their functionality. Embedding a molecular switch capable of transition between two or more metastable isomers by light stimuli is one of the most straightforward and widely accepted methods to potentially realize the multifunctionality of optoelectronic devices. A molecular switch embedded in a semiconductor can effectively control various parameters such as trap-level, dielectric constant, electrical resistance, charge mobility, and charge polarity, which can be utilized in photoprogrammable devices including transistors, memory, and diodes. This review classifies the mechanism of each optoelectronic transition driven by molecular switches regardless of the type of semiconductor material or molecular switch or device. In addition, the basic characteristics of molecular switches and the persisting technical/scientific issues corresponding to each mechanism are discussed to help researchers. Finally, interesting yet infrequently reported applications of molecular switches and their mechanisms are also described.

An embedded interfacial network stabilizes inorganic CsPbI3 perovskite thin films

The black perovskite phase of CsPbI3 is promising for optoelectronic applications; however, it is unstable under ambient conditions, transforming within minutes into an optically inactive yellow phase, a fact that has so far prevented its widespread adoption. Here we use coarse photolithography to embed a PbI2-based interfacial microstructure into otherwise-unstable CsPbI3 perovskite thin films and devices. Films fitted with a tessellating microgrid are rendered resistant to moisture-triggered decay and exhibit enhanced long-term stability of the black phase (beyond 2.5 years in a dry environment), due to increasing the phase transition energy barrier and limiting the spread of potential yellow phase formation to structurally isolated domains of the grid. This stabilizing effect is readily achieved at the device level, where unencapsulated CsPbI3 perovskite photodetectors display ambient-stable operation. These findings provide insights into the nature of phase destabilization in emerging CsPbI3 perovskite devices and demonstrate an effective stabilization procedure which is entirely orthogonal to existing approaches.

Tailoring the Time-Averaged Structure for Polarization-Sensitive Chiral Perovskites

Chiral perovskites have emerged as promising candidates for polarization-sensing materials. Despite their excellent chiroptical properties, the nature of their multiple-quantum-well structures is a critical hurdle for polarization-based and spintronic applications. Furthermore, as the origin of chiroptical activity in chiral perovskites is still illusive, the strategy for simultaneously enhancing the chiroptical activity and charge transport has not yet been reported. Here, we demonstrated that incorporating a Lewis base into the lattice can effectively tune the chiroptical response and electrical properties of chiral perovskites. Through solid-state nuclear magnetic resonance spectroscopic measurements and theoretical calculations, it was demonstrated that the material property manipulation resulted from the change in the time-averaged structure induced by the Lewis base. Finally, as a preliminary proof of concept, a vertical-type circularly polarized light photodetector based on chiral perovskites was developed, exhibiting an outstanding performance with a distinguishability of 0.27 and a responsivity of 0.43 A W^-1.

Cesium Lead Iodide Perovskites: Optically Active Crystal Phase Stability to Surface Engineering

Among perovskites, the research on cesium lead iodides (CsPbI₃) has attracted a large research community, owing to their all-inorganic nature and promising solar cell performance. Typically, the CsPbI₃ solar cell devices are prepared at various heterojunctions, and working at fluctuating temperatures raises questions on the material stability-related performance of such devices. The fundamental studies reveal that their poor stability is due to a lower side deviation from Goldschmidt's tolerance factor, causing weak chemical interactions within the crystal lattice. In the case of organic-inorganic hybrid perovskites, where their stability is related to the inherent chemical nature of the organic cations, which cannot be manipulated to improve the stability drastically whereas the stability of CsPbI₃ is related to surface and lattice engineering. Thus, the challenges posed by CsPbI₃ could be overcome by engineering the surface and inside the CsPbI₃ crystal lattice. A few solutions have been proposed, including controlled crystal sizes, surface modifications, and lattice engineering. Various research groups have been working on these aspects and had accumulated a rich understanding of these materials. In this review, at first, we survey the fundamental aspects of CsPbI₃ polymorphs structure, highlighting the superiority of CsPbI₃ over other halide systems, stability, the factors (temperature, polarity, and size influence) leading to their phase transformations, and electronic band structure along with the important property of the defect tolerance nature. Fortunately, the factors stabilizing the most effective phases are achieved through a size reduction and the efficient surface passivation on the delicate CsPbI₃ nanocrystal surfaces. In the following section, we have provided the up-to-date surface passivating methods to suppress the non-radiative process for near-unity photoluminescence quantum yield, while maintaining their optically active phases, especially through molecular links (ligands, polymers, zwitterions, polymers) and inorganic halides. We have also provided recent advances to the efficient synthetic protocols for optically active CsPbI₃ NC phases to use readily for solar cell applications. The nanocrystal purification techniques are challenging and had a significant effect on the device performances. In part, we summarized the CsPbI₃-related solar cell device performances with respect to the device fabrication methods. At the end, we provide a brief outlook on the view of surface and lattice engineering in CsPbI₃ NCs for advancing the enhanced stability which is crucial for superior optical and light applications.

Elucidating the origin of chiroptical activity in chiral 2D perovskites through nano-confined growth

Chiral perovskites are being extensively studied as a promising candidate for spintronic- and polarization-based optoelectronic devices due to their interesting spin-polarization properties. However, the origin of chiroptical activity in chiral perovskites is still unknown, as the chirality transfer mechanism has been rarely explored. Here, through the nano-confined growth of chiral perovskites (MBA₂PbI_4(1-x)Br_4x), we verified that the asymmetric hydrogen-bonding interaction between chiral molecular spacers and the inorganic framework plays a key role in promoting the chiroptical activity of chiral perovskites. Based on this understanding, we observed remarkable asymmetry behavior (absorption dissymmetry of 2.0 × 10⁻³ and anisotropy factor of photoluminescence of 6.4 × 10⁻² for left- and right-handed circularly polarized light) in nanoconfined chiral perovskites even at room temperature. Our findings suggest that electronic interactions between building blocks should be considered when interpreting the chirality transfer phenomena and designing hybrid materials for future spintronic and polarization-based devices.

In this study, Ma et al. demonstrated that asymmetric hydrogen-bonding interaction between chiral organic spacer and inorganic frameworks plays a key role in promoting the chiroptical activity of chiral perovskites.

Stabilization and Self-Passivation of Grain Boundaries in Halide Perovskite by Rigid Body Translation

The physical properties of grain boundaries in halide perovskites, especially their atomic structure, have not been fully understood yet. We report that Σ5 [130] symmetrical tilt grain boundaries can be stabilized by rigid body translation which is moving one side of the grain parallel with respect to the adjacent grain. Such reconstruction passivates grain boundaries by removing Pb-Pb and I-I interactions that introduce shallow defect states in the band gap. Rigid body translation also stabilizes the [110] antiphase boundary as well in both CsPbI₃ and CsPbBr₃.

Direct optical patterning of perovskite nanocrystals with ligand cross-linkers

Precise microscale patterning is a prerequisite to incorporate the emerging colloidal metal halide perovskite nanocrystals into advanced, integrated optoelectronic platforms for widespread technological applications. Current patterning methods suffer from some combination of limitations in patterning quality, versatility, and compatibility with the workflows of device fabrication. This work introduces the direct optical patterning of perovskite nanocrystals with ligand cross-linkers or DOPPLCER. The underlying, nonspecific cross-linking chemistry involved in DOPPLCER supports high-resolution, multicolored patterning of a broad scope of perovskite nanocrystals with their native ligands. Patterned nanocrystal films show photoluminescence (after postpatterning surface treatment), electroluminescence, and photoconductivity on par with those of conventional nonpatterned films. Prototype, pixelated light-emitting diodes show peak external quantum efficiency of 6.8% and luminance over 20,000 cd m^-2. Both are among the highest for patterned perovskite nanocrystal devices. These results create new possibilities in the system-level integration of perovskite nanomaterials and advance their applications in various optoelectronic and photonic platforms.

Stabilization of Metastable Halide Perovskite Lattices in the 2D Limit

Metal halide perovskites constitute a new class of semiconductors that are structurally tailorable, exhibiting rich structural polymorphs. In this perspective, the polymorphism in lead halide perovskites is described-a material system currently used for high-performance photovoltaics and optoelectronics. Strategies for stabilizing the metastable perovskite polymorphs based on crystal size reduction and surface functionalization are critically reviewed. Focus is on an unprecedented stabilization of metastable perovskite lattices in the 2D limit (e.g., with a thickness down to a few unit cells) due to the dominance of surface effects. This stabilization allows the incorporation of various A-cations that deemed oversized for 3D perovskites into the 2D perovskite lattices, which bring new insights on the relationships between the crystal structures and optoelectronic properties and lead to emergent ferroelectricity in halide perovskites. A comprehensive understanding is provided on how the A-cations influence the structural, optoelectronic, and ferroelectric properties, with an emphasis on the second order Jahn-Teller distortion caused by the oversized A-cations. Finally, future perspectives on new structure exploration and studies of fundamental photophysical properties using stabilized perovskite lattices are provided.

Enhanced Light Emission through Symmetry Engineering of Halide Perovskites

Metal-halide perovskites (MHPs) have attracted tremendous attention as active materials in optoelectronic devices. For light-emitting diode (LED) applications, nanostructuring of MHPs is considered to be inevitable, but its light-enhancement mechanism is still elusive because the particle (or grain) size is often beyond the quantum confinement regime. As motivated by the experimental finding that the nanostructuring can change the preferred crystalline symmetry from the orthorhombic phase to the high-symmetric cubic phase, we here investigated the carrier dynamics in various polymorphic phases of CsPbBr₃ using ab initio quantum dynamics simulation. We found that the cubic phase shows a smaller inelastic phonon scattering than the orthorhombic phase; the suppression of the octahedral tilt minimizes the longitudinal Br fluctuation and helps disentangle the A-site cation dynamics from the nonadiabatic carrier dynamics. We thus anticipate that our present work will offer a material design principle to enhance the quantum yield of MHPs via symmetry engineering, which will help develop highly luminescent LED technology based on MHPs.

Remarkable Black-Phase Robustness of CsPbI3 Nanocrystals Sealed in Solid SiO2 /AlOx Sub-Micron Particles

This work combines the high-temperature sintering method and atomic layer deposition (ALD) technique, and yields SiO₂ /AlO_x -sealed γ-CsPbI₃ nanocrystals (NCs). The black-phase CsPbI₃ NCs, scattered and encapsulated firmly in solid SiO₂ sub-micron particles, maintain in black phases against water soaking, ultraviolet irradiation, and heating, exhibiting remarkable phase stability. A new phase-transition route, from γ via β to α phase without transferring into δ phase, has been discovered upon temperature increasing. The phase stability is ascribed to the high pressure exerted by the rigid SiO₂ encapsulations, and its condensed amorphous structures that prevent the permeation of H₂ O molecules. Nanoscale coating of Al₂ O₃ thin films, which are deposited on the surface of the CsPbI₃ -SiO₂ by ALD, enhances the protection against O₂ infiltration, greatly elevating the high-temperature stability of CsPbI₃ NCs sealed inside, as the samples remain bright after 1-h annealing in air at 400 °C. These fabrication and encapsulation techniques effectively prevent the formation of δ-CsPbI₃ under harsh environment, bringing the high-pressure preservation of black-phase CsPbI₃ from laboratory to industry toward potential applications in both photovoltaic and fluorescent areas.

Chiral Perovskites for Next-Generation Photonics: From Chirality Transfer to Chiroptical Activity

Organic-inorganic hybrid halide perovskites (OIHPs) are commonly used as prototypical materials for various applications, including photovoltaics, photodetectors, and light-emitting devices. Since the chiroptical properties of OIHPs are deciphered in 2017, chiral OIHPs have been rediscovered as new hybrid systems comprising chiral organic molecules and achiral inorganic octahedral layers. Owing to their exceptional optoelectrical properties and structural flexibility, chiral OIHPs have received a considerable amount of attention in chiral photonics, chiroptoelectronics, spintronics, and ferroelectrics. Despite their intriguing chiral properties, the transfer mechanism from chiral molecules to achiral semiconductors has not been extensively investigated. Furthermore, an in-depth understanding of the origin of chiroptical activity is still elusive. In this review article, recent advances in the chiroptical activities of chiral OIHPs and polarization-based devices adopting chiral OIHPs are comprehensively discussed, and insight into the underlying chirality transfer mechanism based on theoretical considerations is provided. This comprehensive survey, with an emphasis on the chirality transfer mechanism, will help readers understand the chiroptical properties of OIHPs, which are crucial for the development of spin-based photonic and optoelectronic devices. Additionally, promising strategies to exploit the potential of chiral OIHPs are also discussed.

Liquid-phase sintering of lead halide perovskites and metal-organic framework glasses

[Figure: see text].

Electronic and optical properties of bulk and surface of CsPbBr3 inorganic halide perovskite a first principles DFT 1/2 approach

This work aims to test the effectiveness of newly developed DFT-1/2 functional in calculating the electronic and optical properties of inorganic lead halide perovskites CsPbBr3. Herein, from DFT-1/2 we have obtained the direct band gap of 2.36 eV and 3.82 eV for orthorhombic bulk and 001-surface, respectively. The calculated energy band gap is in qualitative agreement with the experimental findings. The bandgap of ultra-thin film of CsPbBr3 is found to be 3.82 eV, which is more than the expected range 1.23-3.10 eV. However, we have found that the bandgap can be reduced by increasing the surface thickness. Thus, the system under investigation looks promising for optoelectronic and photocatalysis applications, due to the bandgap matching and high optical absorption in UV-Vis (Ultra violet and visible spectrum) range of electro-magnetic(em) radiation.

Strain analysis and engineering in halide perovskite photovoltaics

Halide perovskites are a compelling candidate for the next generation of clean-energy-harvesting technologies owing to their low cost, facile fabrication and outstanding semiconductor properties. However, photovoltaic device efficiencies are still below practical limits and long-term stability challenges hinder their practical application. Current evidence suggests that strain in halide perovskites is a key factor in dictating device efficiency and stability. Here we outline the fundamentals of strain within halide perovskites relevant to photovoltaic applications and rationalize approaches to characterize the phenomenon. We examine recent breakthroughs in eliminating the adverse impacts of strain, enhancing both device efficiencies and operational stabilities. Finally, we discuss further challenges and outline future research directions for placing stress and strain studies at the forefront of halide perovskite research. An extensive understanding of strain in halide perovskites is needed, which would allow effective strain management and drive further enhancements in efficiencies and stabilities of perovskite photovoltaics.

Electrochemical synthesis of annealing-free and highly stable black-phase CsPbI3 perovskite

All-inorganic CsPbI₃ halide perovskite has become a hot research topic for applications in next-generation optoelectronic devices. However, the main limitations are the high-temperature synthesis and poor phase stability. In this study, we demonstrate a unique solution-phase strategy for the low-temperature preparation of black-phase CsPbI₃ by in situ electrochemistry. By controllable adjustment of the electrochemical growth process, annealing-free black-phase CsPbI₃ can be synthesized. The black-phase CsPbI₃ showed high-purity red photoluminescence at approximately 690 nm with ultra-high environmental stability for up to 11 days at a high relative humidity of 70%. The underlying mechanisms of the formation of the highly stable black-phase CsPbI₃ at room temperature have been discussed in this study. The results provide a new platform for the large scale, low-temperature, and convenient synthesis of black-phase CsPbI₃ perovskite.

Energetic and electronic properties of CsPbBr3 surfaces: a first-principles study

Surface properties of all-inorganic halide perovskites play a crucial role in determining optoelectronic performance of these materials. We investigate the surface energies and electronic structures of cubic CsPbBr₃ surfaces systematically using density functional theory (DFT) methods. We calculate the surface phase diagrams of low-index surfaces of CsPbBr₃, i.e., (100), (110), (111) surfaces. We found that nonpolar (100) surfaces are more stable than polar (110) and (111) surfaces. The nonpolar CsBr-terminated (100) surface shows the best stability, which is attributed to the effect of surface relaxation and high ionicity of the surface layer. The electronic structures reveal that charge transfer to compensate the polarity raises the energy of polar surfaces, which makes polar surfaces unstable. Furthermore, we found that the modulation of surface chemical composition provides an effective way to compensate polarity and thus make polar surfaces of CsPbBr₃ stable. Our results provide physical insights into understanding and further enhancing the surface stability of all-inorganic halide perovskites. This would be helpful in promoting the advancement of all-inorganic halide perovskite-based materials and devices.

Vertically Aligned CsPbBr3 Nanowire Arrays with Template-Induced Crystal Phase Transition and Stability

Metal halide perovskites show great promise for a wide range of optoelectronic applications but are plagued by instability when exposed to air and light. This work presents low-temperature solution growth of vertically aligned CsPbBr₃ nanowire arrays in AAO (anodized aluminum oxide) templates with excellent stability, with samples exposed to air for 4 months still exhibiting comparable photoluminescence and UV stability to fresh samples. The single-crystal nanowire length is adjusted from ∼100 nm to 5 μm by adjusting the precursor solution amount and concentration, and we observe length-to-diameter ratios as high as 100. Structural characterization results indicate that large-diameter CsPbBr₃ nanowires have an orthorhombic structure, while the 10 nm- and 20 nm-diameter nanowires adopt a cubic structure. Photoluminescence shows a gradual blue-shift in emission with decreasing nanowire diameter and marginal changes under varying illumination power intensity. The CsPbBr₃-nanowires/AAO composite exhibits excellent resistance to X-ray radiation and long-term air storage, which makes it promising for future optoelectronic applications such as X-ray scintillators. These results show how physical confinement in AAO can be used to realize CsPbBr₃ nanowire arrays and control their morphology and crystal structure.

Wide-Bandgap Metal Halide Perovskites for Tandem Solar Cells

Metal halide perovskite solar cells (PSCs) have become the most promising new-generation solar cell technology. To date, perovskites also represent the only polycrystalline thin-film absorber technology that has enabled >20% efficiency for wide-bandgap solar cells, making wide-bandgap PSCs uniquely positioned to enable high-efficiency and low-cost tandem solar cell technologies by coupling wide-bandgap perovskites with low-bandgap absorbers. In this Focus Review, we highlight recent research progress on developing wide-bandgap PSCs, including the key mechanisms associated with efficiency loss and instability as well as strategies for overcoming these challenges. We also discuss recent accomplishments and research trends on using wide-bandgap PSCs in perovskite-based tandem configurations, including perovskite/perovskite, perovskite/Si, perovskite/CIGS, and other emerging tandem technologies.

Electronic effects of nano-confinement in functional organic and inorganic materials for optoelectronics

This review provides a comprehensive overview of the electronic effects of nano-confinement (from 1D to 3D geometries) on optoelectronic materials and their applications.

Crystallization in Confinement

Many crystallization processes of great importance, including frost heave, biomineralization, the synthesis of nanomaterials, and scale formation, occur in small volumes rather than bulk solution. Here, the influence of confinement on crystallization processes is described, drawing together information from fields as diverse as bioinspired mineralization, templating, pharmaceuticals, colloidal crystallization, and geochemistry. Experiments are principally conducted within confining systems that offer well-defined environments, varying from droplets in microfluidic devices, to cylindrical pores in filtration membranes, to nanoporous glasses and carbon nanotubes. Dramatic effects are observed, including a stabilization of metastable polymorphs, a depression of freezing points, and the formation of crystals with preferred orientations, modified morphologies, and even structures not seen in bulk. Confinement is also shown to influence crystallization processes over length scales ranging from the atomic to hundreds of micrometers, and to originate from a wide range of mechanisms. The development of an enhanced understanding of the influence of confinement on crystal nucleation and growth will not only provide superior insight into crystallization processes in many real-world environments, but will also enable this phenomenon to be used to control crystallization in applications including nanomaterial synthesis, heavy metal remediation, and the prevention of weathering.

Micro- and Nanopatterning of Halide Perovskites Where Crystal Engineering for Emerging Photoelectronics Meets Integrated Device Array Technology

Tremendous efforts have been devoted to developing thin film halide perovskites (HPs) for use in high-performance photoelectronic devices, including solar cells, displays, and photodetectors. Furthermore, structured HPs with periodic micro- or nanopatterns have recently attracted significant interest due to their potential to not only improve the efficiency of an individual device via the controlled arrangement of HP crystals into a confined geometry, but also to technologically pixelate the device into arrays suitable for future commercialization. However, micro- or nanopatterning of HPs is not usually compatible with conventional photolithography, which is detrimental to ionic HPs and requires special techniques. Herein, a comprehensive overview of the state-of-the-art technologies used to develop micro- and nanometer-scale HP patterns, with an emphasis on their controlled microstructures based on top-down and bottom-up approaches, and their potential for future applications, is provided. Top-down approaches include modified conventional lithographic techniques and soft-lithographic methods, while bottom-up approaches include template-assisted patterning of HPs based on lithographically defined prepatterns and self-assembly. HP patterning is shown here to not only improve device performance, but also to reveal the unprecedented functionality of HPs, leading to new research areas that utilize their novel photophysical properties.

Phase Selection of Cesium Lead Triiodides through Surface Ligand Engineering

The cesium lead triiodide (CsPbI₃) perovskite is a promising candidate for stable light absorbers and red-light-emitting sources due to its outstanding stability. Phase engineering is the most important approach for the commercialization of CsPbI₃ because the optically inactive nonperovskite structure is more stable than three-dimensional (3-D) perovskite lattices at ambient temperature. This study presents an in-depth evaluation to find the optimum surface ligand and to reveal the mechanism of phase stabilization by surface ligands. Thermodynamic evaluations combined with density functional theory calculations indicate the criteria for forming stable 3-D CsPbI₃ perovskites under surface and volume free energy competition between perovskite and nonperovskite phases. Comparative calculations for ammonium, alcohol, and thiol groups show that ammonium groups enhance the phase stability of 3-D perovskites the most. In addition, ammonium-passivated CsPbI₃ is relatively robust against defect formation and H₂O adsorption.

Strain-induced structural phase transition, electric polarization and unusual electric properties in photovoltaic materials CsMI3 (M = Pb, Sn)

The structural phase transition, ferroelectric polarization, and electric properties have been investigated for photovoltaic films CsMI3 (M = Pb, Sn) epitaxially grown along (001) direction based on the density functional theory. The calculated results indicate that the phase diagrams of two epitaxial CsPbI3 and CsSnI3 films are almost identical, except critical transition strains varying slightly. The epitaxial tensile strains induce two ferroelectric phases Pmc21, and Pmn21, while the compressive strains drive two paraelectric phases P212121, P21212. The larger compressive strain enhances the ferroelectric instability in these two films, eventually rendering them another ferroelectric state Pc. Whether CsPbI3 or CsSnI3, the total polarization of Pmn21 phase comes from the main contribution of B-position cations (Pb or Sn), whereas, for Pmc21 phase, the main contributor is the I ion. Moreover, the epitaxial strain effects on antiferrodistortive vector, polarization and band gap of CsMI3 (M = Pb, Sn) are further discussed. Unusual electronic properties under epitaxial strains are also revealed and interpreted.

Polymer-Assisted Nanoimprinting for Environment- and Phase-Stable Perovskite Nanopatterns

Despite the great interest in inorganic halide perovskites (IHPs) for a variety of photoelectronic applications, environmentally robust nanopatterns of IHPs have hardly been developed mainly owing to the uncontrollable rapid crystallization or temperature and humidity sensitive polymorphs. Herein, we present a facile route for fabricating environment- and phase-stable IHP nanopatterns over large areas. Our method is based on nanoimprinting of a soft and moldable IHP adduct. A small amount of poly(ethylene oxide) was added to an IHP precursor solution to fabricate a spin-coated film that is soft and moldable in an amorphous adduct state. Subsequently, a topographically prepatterned elastomeric mold was used to nanoimprint the film to develop well-defined IHP nanopatterns of CsPbBr₃ and CsPbI₃ of 200 nm in width over a large area. To ensure environment- and phase-stable black CsPbI₃ nanopatterns, a polymer backfilling process was employed on a nanopatterned CsPbI₃. The CsPbI₃ nanopatterns were overcoated with a thin poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) film, followed by thermal melting of PVDF-TrFE, which formed the air-exposed CsPbI₃ nanopatterns laterally confined with PVDF-TrFE. Our polymer backfilled CsPbI₃ nanopatterns exhibited excellent environmental stability over one year at ambient conditions and for 10 h at 85 °C, allowing the development of arrays of two-terminal, parallel-type photodetectors with nanopatterned photoactive CsPbI₃ channels. Our polymer-assisted nanoimprinting offers a fast, low-pressure/temperature patterning method for high-quality nanopatterns on various substrates over a large area, overcoming conventional costly time-consuming lithographic techniques.

Elastic and electronic origins of strain stabilized photovoltaic γ-CsPbI3

Results of this work provide fundamental elastic and electronic insights which are instructive for strain engineering of photovoltaic γ-CsPbI₃.

Solution-phase synthesis of CsPbI3 nanowire clusters via polymer-induced anisotropic growth and self-assembly

A facile solution-phase synthesis of black γ-phase CsPbI3 nanowire clusters was developed using poly(methyl methacrylate) (PMMA) as surfactant. PMMA was found to efficiently retard the crystal growth, thereby inducing anisotropic growth for formation of the nanowire structure, while the intermolecular hydrogen bonds of PMMA act as a driving force for self-assembly of the nanowires.