1
|
Jiang S, Hou F, Zeng S, Zhang Y, Zhao E, Sun Y, Zhao L, Zhang C, Jia M, Dai JF, Huang M, Zhang Q, Zou X, Zhang Y, Lin J. An emerging quaternary semiconductor nanoribbon with gate-tunable anisotropic conductance. Sci Bull (Beijing) 2024:S2095-9273(24)00505-X. [PMID: 39084926 DOI: 10.1016/j.scib.2024.07.025] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/29/2024] [Revised: 06/01/2024] [Accepted: 07/02/2024] [Indexed: 08/02/2024]
Abstract
Two-dimensional noble transition metal chalcogenide (NTMC) semiconductors represent compelling building blocks for fabricating flexible electronic and optoelectronic devices. While binary and ternary compounds have been reported, the existence of quaternary NTMCs with a greater elemental degree of freedom remains largely unexplored. This study presents the pioneering experimental realization of a novel semiconducting quaternary NTMC material, AuPdNaS2, synthesized directly on Au foils through chemical vapor deposition. The ribbon-shaped morphology of the AuPdNaS2 crystal can be finely tuned to a thickness as low as 9.2 nm. Scanning transmission electron microscopy reveals the atomic arrangement, showcasing robust anisotropic features; thus, AuPdNaS2 exhibits distinct anisotropic phonon vibrations and electrical properties. The field-effect transistor constructed from AuPdNaS2 crystal demonstrates a pronounced anisotropic conductance (σmax/σmin = 3.20) under gate voltage control. This investigation significantly expands the repertoire of NTMC materials and underscores the potential applications of AuPdNaS2 in nano-electronic devices.
Collapse
Affiliation(s)
- Shaolong Jiang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China; Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China
| | - Fuchen Hou
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China; Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China
| | - Shengfeng Zeng
- Shenzhen Geim Graphene Center, Institue of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Yubo Zhang
- Minjiang Collaborative Center for Theoretical Physics, College of Physics and Electronic Information Engineering, Minjiang University, Fuzhou 350108, China
| | - Erding Zhao
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yilin Sun
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
| | - Liyun Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Cheng Zhang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Mengyuan Jia
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jun-Feng Dai
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Mingyuan Huang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Xiaolong Zou
- Shenzhen Geim Graphene Center, Institue of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China.
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China.
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China; Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China.
| |
Collapse
|
2
|
Yang J, Xie J, Jiang S, Zhang K, Li Q, Wang Y, Wang T, Su F. Extraordinary Polarization and Thickness Dependences of Photocarrier Dynamics in PdSe 2 Ribbons. J Phys Chem Lett 2024; 15:4276-4285. [PMID: 38607948 DOI: 10.1021/acs.jpclett.4c00765] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/14/2024]
Abstract
Pentagonal palladium diselenide (PdSe2) stands out for its exceptional optoelectronic properties, including high carrier mobility, tunable bandgap, and anisotropic electronic and optical responses. Herein, we systematically investigate photocarrier dynamics in PdSe2 ribbons using polarization-resolved optical pump-probe spectroscopy. In thin PdSe2 ribbons with a semiconductor phase, the photocarrier dynamics are found to be dominated by intraband hot-carrier cooling, interband recombination, and the exciton effect, showing weak crystalline orientation dependences. Conversely, in thick semimetal-phase PdSe2 ribbons, the photocarrier relaxations governed by the electron-optical/acoustic phonon scattering strongly depend on the sample orientation, albeit with a degradation in in-plane anisotropy following hot-carrier cooling. Furthermore, we analyze the correlations between photocarrier dynamics and anisotropic energy dispersions of electronic structures across a wide range in k space, as well as the contributions from the anisotropic electron-phonon couplings. Our study provides crucial insights for developing polarization-sensitive photoelectronic devices based on PdSe2.
Collapse
Affiliation(s)
- Jin Yang
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jiafeng Xie
- GBA Branch of Aerospace Information Research Institute, Chinese Academy of Sciences, Guangzhou 510700, China
- Guangdong Provincial Key Laboratory of Terahertz Quantum Electromagnetics, Guangzhou 510700, China
| | - Shaolong Jiang
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China
| | - Kai Zhang
- GBA Branch of Aerospace Information Research Institute, Chinese Academy of Sciences, Guangzhou 510700, China
- Guangdong Provincial Key Laboratory of Terahertz Quantum Electromagnetics, Guangzhou 510700, China
| | - Qi Li
- GBA Branch of Aerospace Information Research Institute, Chinese Academy of Sciences, Guangzhou 510700, China
- Guangdong Provincial Key Laboratory of Terahertz Quantum Electromagnetics, Guangzhou 510700, China
| | - Yunfeng Wang
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - Tianwu Wang
- GBA Branch of Aerospace Information Research Institute, Chinese Academy of Sciences, Guangzhou 510700, China
- Guangdong Provincial Key Laboratory of Terahertz Quantum Electromagnetics, Guangzhou 510700, China
| | - Fuhai Su
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| |
Collapse
|
3
|
Gong Y, Liu L, Zhang R, Lin J, Yang Z, Wen S, Yin Y, Lan C, Li C. Differential pressure sensors based on transfer-free piezoresistive layered PdSe 2thin films. NANOTECHNOLOGY 2024; 35:195203. [PMID: 38306686 DOI: 10.1088/1361-6528/ad2572] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2023] [Accepted: 02/02/2024] [Indexed: 02/04/2024]
Abstract
Piezoresistive layered two-dimensional (2D) crystals offer intriguing promise as pressure sensors for microelectromechanical systems (MEMS) due to their remarkable strain-induced conductivity modulation. However, integration of the conventional chemical vapor deposition grown 2D thin films onto a micromachined silicon platform requires a complex transfer process, which degrades their strain-sensing performance. In this study, we present a differential pressure sensor built on a transfer-free piezoresistive PdSe2polycrystalline film deposited on a SiNxmembrane by plasma-enhanced selenization of a metal film at a temperature as low as 200 °C. Based on the resistance change and finite element strain analysis of the film under membrane deflection, we show that a 7.9 nm thick PdSe2film has a gauge factor (GF) of -43.3, which is ten times larger than that of polycrystalline silicon. The large GF enables the development of a diaphragm pressure sensor with a high sensitivity of 3.9 × 10-4kPa-1within the differential pressure range of 0-60 kPa. In addition, the sensor with a Wheatstone bridge circuit achieves a high voltage sensitivity of 1.04 mV·kPa-1, a rapid response time of less than 97 ms, and small output voltage variation of 8.1 mV in the temperature range of 25 °C to 55 °C. This transfer-free and low-temperature grown PdSe2piezoresistive thin film is promising for MEMS transducer devices.
Collapse
Affiliation(s)
- Yimin Gong
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, People's Republic of China
| | - Liwen Liu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, People's Republic of China
| | - Rui Zhang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, People's Republic of China
| | - Jie Lin
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, People's Republic of China
| | - Zhuojun Yang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, People's Republic of China
| | - Shaofeng Wen
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, People's Republic of China
| | - Yi Yin
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, People's Republic of China
| | - Changyong Lan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, People's Republic of China
| | - Chun Li
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, People's Republic of China
| |
Collapse
|
4
|
Zhang Y, Tian H, Li H, Yoon C, Nelson RA, Li Z, Watanabe K, Taniguchi T, Smirnov D, Kawakami RK, Goldberger JE, Zhang F, Lau CN. Quantum octets in high mobility pentagonal two-dimensional PdSe 2. Nat Commun 2024; 15:761. [PMID: 38278796 PMCID: PMC10817936 DOI: 10.1038/s41467-024-44972-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Accepted: 01/11/2024] [Indexed: 01/28/2024] Open
Abstract
Two-dimensional (2D) materials have drawn immense interests in scientific and technological communities, owing to their extraordinary properties and their tunability by gating, proximity, strain and external fields. For electronic applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large scale synthesis. Here we demonstrate air stable field effect transistors using atomically thin few-layer PdSe2 sheets that are sandwiched between hexagonal BN (hBN), with large saturation current > 350 μA/μm, and high field effect mobilities of ~ 700 and 10,000 cm2/Vs at 300 K and 2 K, respectively. At low temperatures, magnetotransport studies reveal unique octets in quantum oscillations that persist at all densities, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields toward quantum Hall spin and orbital ferromagnetism.
Collapse
Affiliation(s)
- Yuxin Zhang
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA
| | - Haidong Tian
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA
| | - Huaixuan Li
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, TX, 75080-3021, USA
- Department of Physics, Carnegie Mellon University, Pittsburgh, PA, 15213, USA
| | - Chiho Yoon
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, TX, 75080-3021, USA
| | - Ryan A Nelson
- Department of Chemistry and Biochemistry, The Ohio State University, Columbus, OH, 43210, USA
| | - Ziling Li
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Dmitry Smirnov
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA
| | - Roland K Kawakami
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA
| | - Joshua E Goldberger
- Department of Chemistry and Biochemistry, The Ohio State University, Columbus, OH, 43210, USA
| | - Fan Zhang
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, TX, 75080-3021, USA
| | - Chun Ning Lau
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA.
| |
Collapse
|
5
|
Ahmad W, Wu J, Zhuang Q, Neogi A, Wang Z. Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207641. [PMID: 36658722 DOI: 10.1002/smll.202207641] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Revised: 01/01/2023] [Indexed: 06/17/2023]
Abstract
Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.
Collapse
Affiliation(s)
- Waqas Ahmad
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Qiandong Zhuang
- Physics Department, Lancaster University, Lancaster, LA14YB, UK
| | - Arup Neogi
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
- Institute for Advanced Study, Chengdu University, Chengdu, 610106, China
| |
Collapse
|
6
|
Gu Y, Zhang L, Cai H, Liang L, Liu C, Hoffman A, Yu Y, Houston A, Puretzky AA, Duscher G, Rack PD, Rouleau CM, Meng X, Yoon M, Geohegan DB, Xiao K. Stabilized Synthesis of 2D Verbeekite: Monoclinic PdSe 2 Crystals with High Mobility and In-Plane Optical and Electrical Anisotropy. ACS NANO 2022; 16:13900-13910. [PMID: 35775975 DOI: 10.1021/acsnano.2c02711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
PdSe2 has a layered structure with an unusual, puckered Cairo pentagonal tiling. Its atomic bond configuration features planar 4-fold-coordinated Pd atoms and intralayer Se-Se bonds that enable polymorphic phases with distinct electronic and quantum properties, especially when atomically thin. PdSe2 is conventionally orthorhombic, and direct synthesis of its metastable polymorphic phases is still a challenge. Here, we report an ambient-pressure chemical vapor deposition approach to synthesize metastable monoclinic PdSe2. Monoclinic PdSe2 is shown to be synthesized selectively under Se-deficient conditions that induce Se vacancies. These defects are shown by first-principles density functional theory calculations to reduce the free energy of the metastable monoclinic phase, thereby stabilizing it during synthesis. The structure and composition of the monoclinic PdSe2 crystals are identified and characterized by scanning transmission electron microscopy imaging, convergent beam electron diffraction, and electron energy loss spectroscopy. Polarized Raman spectroscopy of the monoclinic PdSe2 flakes reveals their strong in-plane optical anisotropy. Electrical transport measurements show that the monoclinic PdSe2 exhibits n-type charge carrier conduction with electron mobilities up to ∼298 cm2 V-1 s-1 and a strong in-plane electron mobility anisotropy of ∼1.9. The defect-mediated growth pathway identified in this work is promising for phase-selective direct synthesis of other 2D transition metal dichalcogenides.
Collapse
Affiliation(s)
- Yiyi Gu
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lizhi Zhang
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
- Laboratory of Theoretical and Computational Nanoscience, National Center for Nanoscience and Technology of China, Beijing 100190, China
| | - Hui Cai
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Chenze Liu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Anna Hoffman
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Yiling Yu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Austin Houston
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Gerd Duscher
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Philip D Rack
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Christopher M Rouleau
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Xiangmin Meng
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mina Yoon
- Materials Sciences and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - David B Geohegan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| |
Collapse
|
7
|
Jamdagni P, Kumar A, Srivastava S, Pandey R, Tankeshwar K. Photocatalytic properties of anisotropic β-PtX 2 (X = S, Se) and Janus β-PtSSe monolayers. Phys Chem Chem Phys 2022; 24:22289-22297. [PMID: 36098214 DOI: 10.1039/d2cp02549c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The highly efficient photocatalytic water splitting process to produce clean energy requires novel semiconductor materials to achieve a high solar-to-hydrogen energy conversion efficiency. Herein, the photocatalytic properties of anisotropic β-PtX2 (X = S, Se) and Janus β-PtSSe monolayers were investigated based on the density functional theory. The small cleavage energy for β-PtS2 (0.44 J m-2) and β-PtSe2 (0.40 J m-2) endorses the possibility of mechanical exfoliation from their respective layered bulk materials. The calculated results revealed that the β-PtX2 monolayers have an appropriate bandgap (∼1.8-2.6 eV) enclosing the water redox potential, light absorption coefficient (∼104 cm-1), and exciton binding energy (∼0.5-0.7 eV), which facilitates excellent visible-light-driven photocatalytic performance. Remarkably, the inherent structural anisotropy leads to an anisotropic high carrier mobility (up to ∼5 × 103 cm2 V-1 S-1), leading to a fast transport of photogenerated carriers. Notably, the required small external potential to realize hydrogen evolution reaction and oxygen evolution reaction processes with an excellent solar-to-hydrogen energy conversion efficiency for β-PtSe2 (∼16%) and β-PtSSe (∼18%) makes them promising candidates for solar water splitting applications.
Collapse
Affiliation(s)
- Pooja Jamdagni
- Department of Physics and Astrophysics, Central University of Haryana, Mahendragarh, 123031, India.
| | - Ashok Kumar
- Department of Physics, Central University of Punjab, Bathinda, 151401, India
| | - Sunita Srivastava
- Department of Physics and Astrophysics, Central University of Haryana, Mahendragarh, 123031, India.
| | - Ravindra Pandey
- Department of Physics, Michigan Technological University, Houghton, MI, 49931, USA.
| | - K Tankeshwar
- Department of Physics and Astrophysics, Central University of Haryana, Mahendragarh, 123031, India.
| |
Collapse
|
8
|
Abstract
Chemical vapor deposition (CVD) is a promising approach for the controllable synthesis of two-dimensional (2D) materials. Many studies have demonstrated that the morphology and structure of 2D materials are highly dependent on growth substrates. Hence, the choice of growth substrates is essential to achieve the precise control of CVD growth. Noble metal substrates have attracted enormous interest owing to the high catalytic activity and rich surface morphology for 2D material growth. In this review, we introduce recent progress in noble metals as substrates for the controllable growth of 2D materials. The underlying growth mechanism and substrate designs of noble metals based on their unique features are thoroughly discussed. In the end, we outline the advantages and challenges of using noble metal substrates and prospect the possible approaches to extend the uses of noble metal substrates for 2D material growth and enhance the structural controllability of the grown materials.
Collapse
Affiliation(s)
- Yang Gao
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Yang Liu
- Cyber Security Research Centre, Nanyang Technological University, Singapore 639798, Singapore.,School of Computer Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.,CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore.,School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| |
Collapse
|
9
|
Li P, Zhang J, Zhu C, Shen W, Hu C, Fu W, Yan L, Zhou L, Zheng L, Lei H, Liu Z, Zhao W, Gao P, Yu P, Yang G. Penta-PdPSe: A New 2D Pentagonal Material with Highly In-Plane Optical, Electronic, and Optoelectronic Anisotropy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2102541. [PMID: 34302398 DOI: 10.1002/adma.202102541] [Citation(s) in RCA: 33] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2021] [Revised: 04/28/2021] [Indexed: 06/13/2023]
Abstract
Due to their low-symmetry lattice characteristics and intrinsic in-plane anisotropy, 2D pentagonal materials, a new class of 2D materials composed entirely of pentagonal atomic rings, are attracting increasing research attention. However, the existence of these 2D materials has not been proven experimentally until the recent discovery of PdSe2 . Herein, penta-PdPSe, a new 2D pentagonal material with a novel low-symmetry puckered pentagonal structure, is introduced to the 2D family. Interestingly, a peculiar polyanion of [SePPSe]4- is discovered in this material, which is the biggest polyanion in 2D materials yet discovered. Strong intrinsic in-plane anisotropic behavior endows penta-PdPSe with highly anisotropic optical, electronic, and optoelectronic properties. Impressively, few-layer penta-PdPSe-based phototransistor not only achieves excellent electronic performances, a moderate electron mobility of 21.37 cm2 V-1 s-1 and a high on/off ratio of up to 108 , but it also has a high photoresponsivity of ≈5.07 × 103 A W-1 at 635 nm, which is ascribed to the photogating effect. More importantly, penta-PdPSe also exhibits a large anisotropic conductance (σmax /σmax = 3.85) and responsivity (Rmax /Rmin = 6.17 at 808 nm), superior to most 2D anisotropic materials. These findings make penta-PdPSe an ideal material for the design of next-generation anisotropic devices.
Collapse
Affiliation(s)
- Peiyang Li
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, School of Materials, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Jiantian Zhang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, School of Materials, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Wanfu Shen
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, 300072, P. R. China
| | - Chunguang Hu
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, 300072, P. R. China
| | - Wei Fu
- Centre of Advanced 2D Materials, National University of Singapore, 1 Science Drive 3, Singapore, 117550, Singapore
| | - Luo Yan
- Institute of Fundamental and Frontier Sciences, Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Liujiang Zhou
- Institute of Fundamental and Frontier Sciences, Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Lu Zheng
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, P. R. China
| | - Hongxiang Lei
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, School of Materials, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Weina Zhao
- Guangdong Key Laboratory of Environmental Catalysis and Health Risk Control, Institute of Environmental Health and Pollution Control, School of Environmental Science and Engineering, Guangdong University of Technology, Guangzhou, 510006, P. R. China
| | - Pingqi Gao
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, School of Materials, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Peng Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, School of Materials, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, School of Materials, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| |
Collapse
|
10
|
Abstract
Low-symmetry two-dimensional (2D) materials have exhibited novel anisotropic properties in optics, electronics, and mechanics. Such characteristics have opened up new avenues for fundamental research on nano-electronic devices. In-plane thermal conductivity plays a pivotal role in the electronic performance of devices. This article reports a systematic study of the in-plane anisotropic thermal conductivity of PdSe2 with a pentagonal, low-symmetry structure. An in-plane anisotropic ratio up to 1.42 was observed by the micro-Raman thermometry method. In the Raman scattering spectrum, we extracted a frequency shift from the Ag3 mode with the most sensitivity to temperature. The anisotropic thermal conductivity was deduced by analyzing the heat diffusion equations of suspended PdSe2 films. With the increase in thickness, the anisotropy ratio decreased gradually because the thermal conductivity in the x-direction increased faster than in the y-direction. The anisotropic thermal conductivity provides thermal management strategies for the next generation of nano-electronic devices based on PdSe2.
Collapse
|
11
|
Xie C, Yang P, Huan Y, Cui F, Zhang Y. Roles of salts in the chemical vapor deposition synthesis of two-dimensional transition metal chalcogenides. Dalton Trans 2020; 49:10319-10327. [PMID: 32648888 DOI: 10.1039/d0dt01561j] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Chemical vapor deposition (CVD) route has emerged as an effective method for the successful synthesis of two-dimensional (2D) materials with satisfactory crystal quality, especially for the synthesis of wafer-scale, uniform thickness or large domain size single-crystal transition metal chalcogenides (TMCs). To achieve this, the salt-assisted CVD strategy has been proved to be powerful to reduce the high melting point of the metal related precursor, decrease the nucleation density and increase the reaction rate on the solid template. However, the specific roles of alkali metals and halide components still remain unclear. Herein, the functions of salts in the growth of TMCs have been discussed by summarizing some recent achievements in salt-assisted synthesis results, wherein salts are mainly introduced as additives in metal precursors to achieve the wafer-scale uniform growth of monolayer and thickness-tunable multi-layered TMCs, and for serving as 3D templates (especially NaCl) to realize the scalable production of TMCs. Moreover, the existing challenges and viable future directions are also proposed for in-depth understanding of salt-assisted C4VD methods and for exploring more efficient CVD strategies.
Collapse
Affiliation(s)
- Chunyu Xie
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China.
| | - Pengfei Yang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China.
| | - Yahuan Huan
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China.
| | - Fangfang Cui
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China.
| | - Yanfeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China.
| |
Collapse
|
12
|
Kempt R, Kuc A, Heine T. Two-Dimensional Noble-Metal Chalcogenides and Phosphochalcogenides. Angew Chem Int Ed Engl 2020; 59:9242-9254. [PMID: 32065703 PMCID: PMC7463173 DOI: 10.1002/anie.201914886] [Citation(s) in RCA: 34] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/21/2019] [Indexed: 11/07/2022]
Abstract
Noble-metal chalcogenides, dichalcogenides, and phosphochalcogenides are an emerging class of two-dimensional materials. Quantum confinement (number of layers) and defect engineering enables their properties to be tuned over a broad range, including metal-to-semiconductor transitions, magnetic ordering, and topological surface states. They possess various polytypes, often of similar formation energy, which can be accessed by selective synthesis approaches. They excel in mechanical, optical, and chemical sensing applications, and feature long-term air and moisture stability. In this Minireview, we summarize the recent progress in the field of noble-metal chalcogenides and phosphochalcogenides and highlight the structural complexity and its impact on applications.
Collapse
Affiliation(s)
- Roman Kempt
- Faculty of Chemistry and Food ChemistryTechnische Universität DresdenBergstrasse 6601069DresdenGermany
| | - Agnieszka Kuc
- Institute of Resource EcologyHelmholtz-Zentrum Dresden-RossendorfPermoserstrasse 1504318LeipzigGermany
| | - Thomas Heine
- Faculty of Chemistry and Food ChemistryTechnische Universität DresdenBergstrasse 6601069DresdenGermany
- Institute of Resource EcologyHelmholtz-Zentrum Dresden-RossendorfPermoserstrasse 1504318LeipzigGermany
| |
Collapse
|
13
|
Xie C, Jiang S, Gao Y, Hong M, Pan S, Zhao J, Zhang Y. Giant Thickness-Tunable Bandgap and Robust Air Stability of 2D Palladium Diselenide. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2000754. [PMID: 32285616 DOI: 10.1002/smll.202000754] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2020] [Revised: 03/11/2020] [Accepted: 03/16/2020] [Indexed: 06/11/2023]
Abstract
Uncovering the thickness-dependent electronic property and environmental stability for 2D materials are crucial issues for promoting their applications in high-performance electronic and optoelectronic devices. Herein, the extrahigh air stability and giant tunable electronic bandgap of chemical vapor deposition (CVD)-derived few-layer PdSe2 on Au foils, by using scanning tunneling microscope/spectroscopy (STM/STS), are reported. The robust stability of 2D PdSe2 is uncovered by the observation of nearly defect/adsorption-free atomic lattices on long-time air-exposed samples. A one-to-one correspondence between the electronic bandgap (from ≈1.15 to ≈0 eV) and thickness of PdSe2 /Au (from bilayer to bulk) is established. It is also revealed that few-layer semiconducting PdSe2 flakes present zero-gap edges, induced by hybridization of Pd 4d and Se 4p orbitals. This work hereby provides straightforward evidence for the thickness-tunable electronic property and air stability of 2D semiconductors, thus shedding light on their applications in next-generation electronic devices.
Collapse
Affiliation(s)
- Chunyu Xie
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China
| | - Shaolong Jiang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China
| | - Yinlu Gao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian, 116024, China
| | - Min Hong
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China
| | - Shuangyuan Pan
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China
| | - Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian, 116024, China
| | - Yanfeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China
| |
Collapse
|
14
|
Gu Y, Cai H, Dong J, Yu Y, Hoffman AN, Liu C, Oyedele AD, Lin YC, Ge Z, Puretzky AA, Duscher G, Chisholm MF, Rack PD, Rouleau CM, Gai Z, Meng X, Ding F, Geohegan DB, Xiao K. Two-Dimensional Palladium Diselenide with Strong In-Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1906238. [PMID: 32173918 DOI: 10.1002/adma.201906238] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/23/2019] [Revised: 12/14/2019] [Accepted: 02/18/2020] [Indexed: 05/12/2023]
Abstract
Two-dimensional (2D) palladium diselenide (PdSe2 ) has strong interlayer coupling and a puckered pentagonal structure, leading to remarkable layer-dependent electronic structures and highly anisotropic in-plane optical and electronic properties. However, the lack of high-quality, 2D PdSe2 crystals grown by bottom-up approaches limits the study of their exotic properties and practical applications. In this work, chemical vapor deposition growth of highly crystalline few-layer (≥2 layers) PdSe2 crystals on various substrates is reported. The high quality of the PdSe2 crystals is confirmed by low-frequency Raman spectroscopy, scanning transmission electron microscopy, and electrical characterization. In addition, strong in-plane optical anisotropy is demonstrated via polarized Raman spectroscopy and second-harmonic generation maps of the PdSe2 flakes. A theoretical model based on kinetic Wulff construction theory and density functional theory calculations is developed and described the observed evolution of "square-like" shaped PdSe2 crystals into rhombus due to the higher nucleation barriers for stable attachment on the (1,1) and (1,-1) edges, which results in their slower growth rates. Few-layer PdSe2 field-effect transistors reveal tunable ambipolar charge carrier conduction with an electron mobility up to ≈294 cm2 V-1 s-1 , which is comparable to that of exfoliated PdSe2 , indicating the promise of this anisotropic 2D material for electronics.
Collapse
Affiliation(s)
- Yiyi Gu
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, 37996, USA
| | - Hui Cai
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Jichen Dong
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Yiling Yu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Anna N Hoffman
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, 37996, USA
| | - Chenze Liu
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, 37996, USA
| | - Akinola D Oyedele
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
- Bredesen Center for Interdisciplinary Research and Graduate Education, University of Tennessee, Knoxville, TN, 37966, USA
| | - Yu-Chuan Lin
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Zhuozhi Ge
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Gerd Duscher
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, 37996, USA
| | - Matthew F Chisholm
- Materials Sciences and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA
| | - Philip D Rack
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, 37996, USA
| | - Christopher M Rouleau
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Zheng Gai
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Xiangmin Meng
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Feng Ding
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - David B Geohegan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| |
Collapse
|
15
|
Lu LS, Chen GH, Cheng HY, Chuu CP, Lu KC, Chen CH, Lu MY, Chuang TH, Wei DH, Chueh WC, Jian WB, Li MY, Chang YM, Li LJ, Chang WH. Layer-Dependent and In-Plane Anisotropic Properties of Low-Temperature Synthesized Few-Layer PdSe 2 Single Crystals. ACS NANO 2020; 14:4963-4972. [PMID: 32233458 DOI: 10.1021/acsnano.0c01139] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Palladium diselenide (PdSe2), a peculiar noble metal dichalcogenide, has emerged as a new two-dimensional material with high predicted carrier mobility and a widely tunable band gap for device applications. The inherent in-plane anisotropy endowed by the pentagonal structure further renders PdSe2 promising for novel electronic, photonic, and thermoelectric applications. However, the direct synthesis of few-layer PdSe2 is still challenging and rarely reported. Here, we demonstrate that few-layer, single-crystal PdSe2 flakes can be synthesized at a relatively low growth temperature (300 °C) on sapphire substrates using low-pressure chemical vapor deposition (CVD). The well-defined rectangular domain shape and precisely determined layer number of the CVD-grown PdSe2 enable us to investigate their layer-dependent and in-plane anisotropic properties. The experimentally determined layer-dependent band gap shrinkage combined with first-principle calculations suggest that the interlayer interaction is weaker in few-layer PdSe2 in comparison with that in bulk crystals. Field-effect transistors based on the CVD-grown PdSe2 also show performances comparable to those based on exfoliated samples. The low-temperature synthesis method reported here provides a feasible approach to fabricate high-quality few-layer PdSe2 for device applications.
Collapse
Affiliation(s)
- Li-Syuan Lu
- Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Guan-Hao Chen
- Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Hui-Yu Cheng
- Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Chih-Piao Chuu
- Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu 30075, Taiwan
| | - Kuan-Cheng Lu
- Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Chia-Hao Chen
- National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan
| | - Ming-Yen Lu
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Tzu-Hung Chuang
- National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan
| | - Der-Hsin Wei
- National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan
| | - Wei-Chen Chueh
- Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Wen-Bin Jian
- Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Ming-Yang Li
- Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu 30075, Taiwan
| | - Yu-Ming Chang
- Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan
| | - Lain-Jong Li
- Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu 30075, Taiwan
| | - Wen-Hao Chang
- Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan
- Center for Emergent Functional Matter Science (CEFMS), National Chiao Tung University, Hsinchu 30010, Taiwan
| |
Collapse
|
16
|
Kempt R, Kuc A, Heine T. Zweidimensionale Edelmetallchalkogenide und ‐phosphochalkogenide. Angew Chem Int Ed Engl 2020. [DOI: 10.1002/ange.201914886] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Roman Kempt
- Fakultät für Chemie und LebensmittelchemieTechnische Universität Dresden Bergstrasse 66 01069 Dresden Deutschland
| | - Agnieszka Kuc
- Institut für RessourcenökologieHelmholtz-Zentrum Dresden-Rossendorf Permoserstrasse 15 04318 Leipzig Deutschland
| | - Thomas Heine
- Fakultät für Chemie und LebensmittelchemieTechnische Universität Dresden Bergstrasse 66 01069 Dresden Deutschland
- Institut für RessourcenökologieHelmholtz-Zentrum Dresden-Rossendorf Permoserstrasse 15 04318 Leipzig Deutschland
| |
Collapse
|
17
|
Shawkat MS, Gil J, Han SS, Ko TJ, Wang M, Dev D, Kwon J, Lee GH, Oh KH, Chung HS, Roy T, Jung Y, Jung Y. Thickness-Independent Semiconducting-to-Metallic Conversion in Wafer-Scale Two-Dimensional PtSe 2 Layers by Plasma-Driven Chalcogen Defect Engineering. ACS APPLIED MATERIALS & INTERFACES 2020; 12:14341-14351. [PMID: 32124612 DOI: 10.1021/acsami.0c00116] [Citation(s) in RCA: 28] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Platinum diselenide (PtSe2) is an emerging class of two-dimensional (2D) transition-metal dichalcogenide (TMD) crystals recently gaining substantial interest, owing to its extraordinary properties absent in conventional 2D TMD layers. Most interestingly, it exhibits a thickness-dependent semiconducting-to-metallic transition, i.e., thick 2D PtSe2 layers, which are intrinsically metallic, become semiconducting with their thickness reduced below a certain point. Realizing both semiconducting and metallic phases within identical 2D PtSe2 layers in a spatially well-controlled manner offers unprecedented opportunities toward atomically thin tailored electronic junctions, unattainable with conventional materials. In this study, beyond this thickness-dependent intrinsic semiconducting-to-metallic transition of 2D PtSe2 layers, we demonstrate that controlled plasma irradiation can "externally" achieve such tunable carrier transports. We grew wafer-scale very thin (a few nm) 2D PtSe2 layers by a chemical vapor deposition (CVD) method and confirmed their intrinsic semiconducting properties. We then irradiated the material with argon (Ar) plasma, which was intended to make it more semiconducting by thickness reduction. Surprisingly, we discovered a reversed transition of semiconducting to metallic, which is opposite to the prediction concerning their intrinsic thickness-dependent carrier transports. Through extensive structural and chemical characterization, we identified that the plasma irradiation introduces a large concentration of near-atomic defects and selenium (Se) vacancies in initially stoichiometric 2D PtSe2 layers. Furthermore, we performed density functional theory (DFT) calculations and clarified that the band-gap energy of such defective 2D PtSe2 layers gradually decreases with increasing defect concentration and dimensions, accompanying a large number of midgap energy states. This corroborative experimental and theoretical study decisively verifies the fundamental mechanism for this externally controlled semiconducting-to-metallic transition in large-area CVD-grown 2D PtSe2 layers, greatly broadening their versatility for futuristic electronics.
Collapse
Affiliation(s)
- Mashiyat Sumaiya Shawkat
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
| | - Jaeyoung Gil
- Department of Chemistry, Seoul National University, Seoul 08826, South Korea
| | - Sang Sub Han
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, South Korea
| | - Tae-Jun Ko
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Mengjing Wang
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Durjoy Dev
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
| | - Junyoung Kwon
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, South Korea
| | - Kyu Hwan Oh
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, South Korea
| | - Hee-Suk Chung
- Analytical Research Division, Korea Basic Science Institute, Jeonju 54907, South Korea
| | - Tania Roy
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
- Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32816, United States
| | - YounJoon Jung
- Department of Chemistry, Seoul National University, Seoul 08826, South Korea
| | - Yeonwoong Jung
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
- Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32816, United States
| |
Collapse
|
18
|
Nguyen GD, Oyedele AD, Haglund A, Ko W, Liang L, Puretzky AA, Mandrus D, Xiao K, Li AP. Atomically Precise PdSe 2 Pentagonal Nanoribbons. ACS NANO 2020; 14:1951-1957. [PMID: 32023412 DOI: 10.1021/acsnano.9b08390] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
We report atomically precise pentagonal PdSe2 nanoribbons (PNRs) fabricated on a pristine PdSe2 substrate with a hybrid method of top-down and bottom-up processes. The PNRs form a uniform array of dimer structure with a width of 2.4 nm and length of more than 200 nm. In situ four-probe scanning tunneling microscopy (STM) reveals metallic behavior of PNRs with ballistic transport for at least 20 nm in length. Density functional theory calculations produce a semiconducting density of states of isolated PNRs and find that the band gap narrows and disappears quickly once considering coupling between PNR stacking layers or interaction with the PdSe2 substrate. The coupling of PNRs is further corroborated by Raman spectroscopy and field-effect transistor measurements. The facile method of fabricating atomically precise PNRs offers an air-stable functional material for dimensional control.
Collapse
Affiliation(s)
- Giang D Nguyen
- Center for Nanophase Materials Sciences , Oak Ridge National Laboratory , Oak Ridge , Tennessee 37831 , United States
- Stewart Blusson Quantum Matter Institute , University of British Columbia , Vancouver , British Columbia V6T 1Z4 , Canada
| | - Akinola D Oyedele
- Center for Nanophase Materials Sciences , Oak Ridge National Laboratory , Oak Ridge , Tennessee 37831 , United States
- Bredesen Center for Interdisciplinary Research and Graduate Education , University of Tennessee , Knoxville , Tennessee 37996 , United States
| | - Amanda Haglund
- Bredesen Center for Interdisciplinary Research and Graduate Education , University of Tennessee , Knoxville , Tennessee 37996 , United States
- Department of Materials Science and Engineering , University of Tennessee , Knoxville , Tennessee 37996 , United States
| | - Wonhee Ko
- Center for Nanophase Materials Sciences , Oak Ridge National Laboratory , Oak Ridge , Tennessee 37831 , United States
| | - Liangbo Liang
- Center for Nanophase Materials Sciences , Oak Ridge National Laboratory , Oak Ridge , Tennessee 37831 , United States
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences , Oak Ridge National Laboratory , Oak Ridge , Tennessee 37831 , United States
| | - David Mandrus
- Department of Materials Science and Engineering , University of Tennessee , Knoxville , Tennessee 37996 , United States
- Materials Science and Technology Division , Oak Ridge National Laboratory , Oak Ridge , Tennessee 37831 , United States
| | - Kai Xiao
- Center for Nanophase Materials Sciences , Oak Ridge National Laboratory , Oak Ridge , Tennessee 37831 , United States
- Bredesen Center for Interdisciplinary Research and Graduate Education , University of Tennessee , Knoxville , Tennessee 37996 , United States
| | - An-Ping Li
- Center for Nanophase Materials Sciences , Oak Ridge National Laboratory , Oak Ridge , Tennessee 37831 , United States
| |
Collapse
|