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Nadeem M, Wang X. Spin Gapless Quantum Materials and Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402503. [PMID: 38962884 DOI: 10.1002/adma.202402503] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2024] [Revised: 06/04/2024] [Indexed: 07/05/2024]
Abstract
Quantum materials, with nontrivial quantum phenomena and mechanisms, promise efficient quantum technologies with enhanced functionalities. Quantum technology is held back because a gap between fundamental science and its implementation is not fully understood yet. In order to capitalize the quantum advantage, a new perspective is required to figure out and close this gap. In this review, spin gapless quantum materials, featured by fully spin-polarized bands and the electron/hole transport, are discussed from the perspective of fundamental understanding and device applications. Spin gapless quantum materials can be simulated by minimal two-band models and could help to understand band structure engineering in various topological quantum materials discovered so far. It is explicitly highlighted that various types of spin gapless band dispersion are fundamental ingredients to understand quantum anomalous Hall effect. Based on conventional transport in the bulk and topological transport on the boundaries, various spintronic device aspects of spin gapless quantum materials as well as their advantages in different models for topological field effect transistors are reviewed.
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Affiliation(s)
- Muhammad Nadeem
- Institute for Superconducting and Electronic Materials (ISEM), Faculty of Engineering and Information Sciences (EIS), University of Wollongong, Wollongong, New South Wales, 2525, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), University of Wollongong, Wollongong, New South Wales, 2525, Australia
| | - Xiaolin Wang
- Institute for Superconducting and Electronic Materials (ISEM), Faculty of Engineering and Information Sciences (EIS), University of Wollongong, Wollongong, New South Wales, 2525, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), University of Wollongong, Wollongong, New South Wales, 2525, Australia
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Gong J, Ding G, Xie C, Wang W, Liu Y, Zhang G, Wang X. Genuine Dirac Half-Metals in Two-Dimensions. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2307297. [PMID: 38044294 PMCID: PMC10853703 DOI: 10.1002/advs.202307297] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2023] [Revised: 11/08/2023] [Indexed: 12/05/2023]
Abstract
When spin-orbit coupling (SOC) is absent, all proposed half-metals with twofold degenerate nodal points at the K (or K') point in 2D materials are classified as "Dirac half-metals" owing to the way graphene is utilized in the earliest studies. Actually, each band crossing point at the K or K' point is described by a 2D Weyl Hamiltonian with definite chirality; hence, it should be a Weyl point. To the best of its knowledge, there have not yet been any reports of a genuine (i.e., fourfold degenerate) 2D Dirac point half-metal. In this work, using first-principles calculations, it proposes for the first time that the 2D d0 -type ferromagnet Mg4 N4 is a genuine 2D Dirac half-metal candidate with a fourfold degenerate Dirac point at the S high-symmetry point, intrinsic magnetism, a high Curie temperature, 100% spin polarization, topology robust under the SOC and uniaxial and biaxial strains, and spin-polarized edge states. This work can serve as a starting point for future predictions of intrinsically magnetic materials with genuine 2D Dirac points, which will aid the frontier of topo-spintronics research in 2D systems.
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Affiliation(s)
- Jialin Gong
- Institute for Superconducting and Electronic Materials (ISEM)University of WollongongWollongong2500Australia
- School of Physical Science and TechnologySouthwest UniversityChongqing400715China
| | - Guangqian Ding
- School of ScienceChongqing University of Posts and TelecommunicationsChongqing400065China
| | - Chengwu Xie
- School of Electronics and Information EngineeringTiangong UniversityTianjin300387China
| | - Wenhong Wang
- School of Electronics and Information EngineeringTiangong UniversityTianjin300387China
| | - Ying Liu
- School of Materials Science and EngineeringHebei University of TechnologyTianjin300130China
| | - Gang Zhang
- Institute of High Performance ComputingAgency for ScienceTechnology and Research (A*STAR)Singapore138632Singapore
| | - Xiaotian Wang
- Institute for Superconducting and Electronic Materials (ISEM)University of WollongongWollongong2500Australia
- School of Physical Science and TechnologySouthwest UniversityChongqing400715China
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Gao Z, Yin Y, Wang Y, Cui Z, Cao T, Shi J, Fan X. Tunable electrical properties and multiple-phases of ferromagnetic GdS 2, GdSe 2 and Janus GdSSe monolayers. Phys Chem Chem Phys 2023; 25:22782-22793. [PMID: 37584079 DOI: 10.1039/d3cp02705h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/17/2023]
Abstract
With the continuous miniaturization and integration of spintronic devices, the two-dimensional (2D) ferromagnet coupling of ferromagnetic and diverse electrical properties has become increasingly important. Herein, we report three ferromagnetic monolayers: GdS2, GdSe2 and Janus GdSSe. They are bipolar magnetic semiconductors and demonstrate ferroelasticity with a large reversible strain of 73.2%. Three monolayers all hold large magnetic moments of about 8μB f.u.-1 and large spin-flip energy gaps in both the conduction and valence bands, which are highly desirable for applications in bipolar field effect spin filters and spin valves. Our calculations have testified to the feasibility of the experimental achievement of the three monolayers and their stability. Additionally, intrinsic valley polarization occurs in the three monolayers owing to the cooperative interplay between spin-orbit coupling and magnetic exchange interaction. Moreover, we identified square lattices for GdS2 and GdSe2 monolayers. The new and stable square lattices of GdS2 and GdSe2 monolayers show robust ferromagnetism with high Curie temperatures of 648 and 312 K, respectively, and the characteristics of spin-gapless semiconductors. Overall, these findings render GdS2, GdSe2 and Janus GdSSe monolayers promising candidate materials for multifunctional spintronic devices at the nanoscale.
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Affiliation(s)
- Zhihao Gao
- State Key Laboratory of Solidification Processing, Center for Advanced Lubrication and Seal Materials, School of Material Science and Engineering, Northwestern Polytechnical University, 127 YouYi Western Road, Xi'an, Shaanxi 710072, China.
| | - Yuehao Yin
- Queen Mary University of London Engineering School, Northwestern Polytechnical University, 127 YouYi Western Road, Xi'an, Shaanxi 710072, China
| | - Yuwan Wang
- State Key Laboratory of Solidification Processing, Center for Advanced Lubrication and Seal Materials, School of Material Science and Engineering, Northwestern Polytechnical University, 127 YouYi Western Road, Xi'an, Shaanxi 710072, China.
| | - Zichun Cui
- State Key Laboratory of Solidification Processing, Center for Advanced Lubrication and Seal Materials, School of Material Science and Engineering, Northwestern Polytechnical University, 127 YouYi Western Road, Xi'an, Shaanxi 710072, China.
| | - Tengfei Cao
- State Key Laboratory of Solidification Processing, Center for Advanced Lubrication and Seal Materials, School of Material Science and Engineering, Northwestern Polytechnical University, 127 YouYi Western Road, Xi'an, Shaanxi 710072, China.
| | - Junqin Shi
- State Key Laboratory of Solidification Processing, Center for Advanced Lubrication and Seal Materials, School of Material Science and Engineering, Northwestern Polytechnical University, 127 YouYi Western Road, Xi'an, Shaanxi 710072, China.
| | - Xiaoli Fan
- State Key Laboratory of Solidification Processing, Center for Advanced Lubrication and Seal Materials, School of Material Science and Engineering, Northwestern Polytechnical University, 127 YouYi Western Road, Xi'an, Shaanxi 710072, China.
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Zhang X, Gong P, Liu F, Zhu S. Spin-gapless van der Waals heterostructure for spin gating through magnetic injection devices. Phys Chem Chem Phys 2023; 25:14138-14146. [PMID: 37162310 DOI: 10.1039/d3cp00987d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Spin-gapless semiconductors (SGSs) are new magnetic zero-bandgap materials whose band structure is extremely sensitive to external influences (pressure or magnetic fields) and have great potential for high-speed and low-energy spintronics applications. The first-principles method was used to systematically study the heterostructures constructed of an asymmetric surface-functionalized Janus MXene material, Cr2NOF, and a two-dimensional hexagonal lattice (2DH) semiconductor material and to study the effects of the electronic structure, Curie temperature, magnetism, and the design of unusual band structures and magnetic injection in the bilayer to obtain an SGS structure. Through the design and construction of Cr2NOF/2DH van der Waals heterojunction spintronic devices, the spin-filtering effect of the devices can reach 100%, especially, realizing spin gating through magnetic injection. We report the transport mechanism of the heterojunction spintronic devices to achieve the goal of a controllable optimization of the device functions, which provides a theoretical basis for the design of MXene van der Waals heterojunctions for high-efficiency and low-power-consumption spintronic devices.
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Affiliation(s)
- Xiaolin Zhang
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process, The State Key Laboratory for Refractories and Metallurgy, Collaborative Innovation Center for Advanced Steels, International Research Institute for Steel Technology, Wuhan University of Science and Technology, Wuhan 430081, China.
| | - Pengwei Gong
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process, The State Key Laboratory for Refractories and Metallurgy, Collaborative Innovation Center for Advanced Steels, International Research Institute for Steel Technology, Wuhan University of Science and Technology, Wuhan 430081, China.
| | - Fangqi Liu
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process, The State Key Laboratory for Refractories and Metallurgy, Collaborative Innovation Center for Advanced Steels, International Research Institute for Steel Technology, Wuhan University of Science and Technology, Wuhan 430081, China.
| | - Sicong Zhu
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process, The State Key Laboratory for Refractories and Metallurgy, Collaborative Innovation Center for Advanced Steels, International Research Institute for Steel Technology, Wuhan University of Science and Technology, Wuhan 430081, China.
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Ni HM, He JJ, Guo FW, Dong JB, Lu TY, Cui WD, Yuan JR, Guo YD, Yan XH. Rich magnetic phase transitions and completely dual-spin polarization of zigzag PC 3 nanoribbons under uniaxial strain. Phys Chem Chem Phys 2023; 25:2342-2348. [PMID: 36597962 DOI: 10.1039/d2cp05066h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
Among many modulation methods, strain engineering is often chosen for nanomaterials to produce tunable band gaps continuously. Inspired by the recently reported two-dimensional material PC3, we explore the tuning of strain on the spin-dependent transport properties of PC3 nanoribbons using the first-principle approach. Surprisingly, strain regulation achieves uninterrupted completely dual-spin polarization over a wide energy range near EF. Analysis reveals that the peculiar transmission spectra arise from the interesting evolution of the band structure, in which strain induces bands to shift and broaden/flatten. This results in triggering the transition of PC3NRs from bandgap-tunable bipolar magnetic semiconductors to spin-gapless semiconductors to ferromagnetic metals or half-metal magnets. Their unique performance demonstrates great potential in spintronics, and our study is expected to provide ideas and theoretical support for the design and application of novel PC3-based spintronic devices in the future.
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Affiliation(s)
- Hui-Min Ni
- College of Information Science and Technology, Nanjing Forestry University, Nanjing 210027, China
| | - Jing-Jing He
- College of Information Science and Technology, Nanjing Forestry University, Nanjing 210027, China
| | - Fang-Wen Guo
- College of Information Science and Technology, Nanjing Forestry University, Nanjing 210027, China
| | - Jia-Bei Dong
- College of Information Science and Technology, Nanjing Forestry University, Nanjing 210027, China
| | - Tian-Yi Lu
- College of Information Science and Technology, Nanjing Forestry University, Nanjing 210027, China
| | - Wen-Dou Cui
- College of Information Science and Technology, Nanjing Forestry University, Nanjing 210027, China
| | - Jia-Ren Yuan
- School of Physics and Materials Science, Nanchang University, Nanchang, 330031, China
| | - Yan-Dong Guo
- College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China.
| | - Xiao-Hong Yan
- College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China. .,School of Material Science and Engineering, Jiangsu University, Zhenjiang, 212013, China.
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Wan W, Zhao R, Ge Y, Liu Y. Janus V 2AsP monolayer : a ferromagnetic semiconductor with a narrow band gap, a high Curie temperature and controllable magnetic anisotropy. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 35:065801. [PMID: 36379060 DOI: 10.1088/1361-648x/aca30c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2022] [Accepted: 11/15/2022] [Indexed: 06/16/2023]
Abstract
The search and design of two-dimensional (2D) magnetic semiconductors for spintronics applications are particularly significant. In this work, we investigated the electronic and magnetic properties of Janus structure based on Dirac half-metallic vanadium phosphide (VP) monolayer (ML) by first-principles calculations. Due to the vertical symmetry breaking, Janus V2AsP ML becomes an intrinsic ferromagnetic semiconductor with a narrow band gap of 0.21 eV. We analyzed the electronic structure and origin of the in-plane easy axis in Janus V2AsP. The electron effective mass is anisotropic and only 0.129 m0along thex-direction. The Curie temperatureTcand magnetic anisotropy energy (MAE) of Janus V2AsP reach 490 K and 178 µeV per V atom, respectively. A uniaxial tensile stainɛxof 5% can increase its band gap and MAE to 0.39 eV and 210.6 µeV per V atom while maintaining itsTcbeing above room temperature. Moreover, the direction of the easy axis can be changed between the in-planex- andy-direction by a small uniaxial tensile strainɛxof 2%. Our study can motivate further research on the design the magnetic semiconductors in Janus structures based on 2D Dirac half-metals for spintronics applications.
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Affiliation(s)
- Wenhui Wan
- State Key Laboratory of Metastable Materials Science and Technology Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
| | - Rui Zhao
- State Key Laboratory of Metastable Materials Science and Technology Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
| | - Yanfeng Ge
- State Key Laboratory of Metastable Materials Science and Technology Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
| | - Yong Liu
- State Key Laboratory of Metastable Materials Science and Technology Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
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Yang Y. Mini-review of interesting properties in Mn 2CoAl bulk and films. Front Chem 2022; 10:1054337. [PMID: 36339051 PMCID: PMC9626756 DOI: 10.3389/fchem.2022.1054337] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2022] [Accepted: 10/06/2022] [Indexed: 12/05/2022] Open
Abstract
Heusler compounds exhibit many interesting properties, such as high thermopower, magnetocaloric properties, and even topological insulator states. Heusler Mn2CoAl alloy has been experimentally and theoretically proposed as a promising spin-gapless semiconductor with novel electronic, magnetic, spintronic, transport, and topological properties. Furthermore, the spin-gapless semiconducting-like behaviors are also predicted in Mn2CoAl films by measuring the transport and magnetic properties. This mini-review systematically summarizes the interesting properties of Mn2CoAl bulk and Mn2CoAl-based films. This mini-review is hoped to guide further experimental investigations and applications in the particular scientific community.
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Affiliation(s)
- Ying Yang
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, China
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8
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Wang J, Wang D. Two-dimensional spin-gapless semiconductors: A mini-review. Front Chem 2022; 10:996344. [PMID: 36092680 PMCID: PMC9452911 DOI: 10.3389/fchem.2022.996344] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2022] [Accepted: 07/26/2022] [Indexed: 11/13/2022] Open
Abstract
In the past decade, two-dimensional (2D) materials and spintronic materials have been rapidly developing in recent years. 2D spin-gapless semiconductors (SGSs) are a novel class of ferromagnetic 2D spintronic materials with possible high Curie temperature, 100% spin-polarization, possible one-dimensional or zero-dimensional topological signatures, and other exciting spin transport properties. In this mini-review, we summarize a series of ideal 2D SGSs in the last 3 years, including 2D oxalate-based metal-organic frameworks, 2D single-layer Fe2I2, 2D Cr2X3 (X = S, Se, and Te) monolayer with the honeycomb kagome (HK) lattice, 2D CrGa2Se4 monolayer, 2D HK Mn-cyanogen lattice, 2D MnNF monolayer, and 2D Fe4N2 pentagon crystal. The mini-review also discusses the unique magnetic, electronic, topological, and spin-transport properties and the possible application of these 2D SGSs. The mini-review can be regarded as an improved understanding of the current state of 2D SGSs in recent 3 years.
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Affiliation(s)
| | - Dandan Wang
- School of Physical Science and Technology, Southwest University, Chongqing, China
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Li J, Li X, Yang J. A review of bipolar magnetic semiconductors from theoretical aspects. FUNDAMENTAL RESEARCH 2022; 2:511-521. [PMID: 38934007 PMCID: PMC11197773 DOI: 10.1016/j.fmre.2022.04.002] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/10/2021] [Revised: 03/31/2022] [Accepted: 04/06/2022] [Indexed: 11/19/2022] Open
Abstract
Spintronics, which employs electrons' spin degree of freedom in data storage and transmission, acts as a promising candidate for next-generation information technology owing to its improved processing speed and reduced power consumption. To seek and design materials with highly spin polarized carriers and find an efficient way to control the spin polarization direction of carriers are critical and urgent to spintronics applications. In this aspect, the bipolar magnetic semiconductor (BMS) serves as an ideal solution since it can generate currents with 100% spin polarization, and the direction of spin polarization is easily tunable by an external gate voltage. Up to now, there have been lots of BMSs predicted by first-principles calculations, however, most of them are extrinsically induced by chemical or physical modifications, and a generalized scheme for designing BMS materials is still lacking. This paper is aimed to briefly review the existing BMS materials designed by theoretical simulations, analyze the main obstacles to experimental realization, and put forward suggestions for future development.
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Affiliation(s)
- Junyao Li
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Department of Chemical Physics, University of Science and Technology of China, Hefei 230026, China
| | - Xingxing Li
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Jinlong Yang
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
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Yu Q, Huang H, Xue S, Tong R, Laref A, Chen J, He Z, Zhu Z, Luo S. Structural configuration and phase stability in the quaternary Heusler compounds CoCrYSb (Y=Sc,Ti, V). COMPUT THEOR CHEM 2022. [DOI: 10.1016/j.comptc.2022.113656] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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Zhang L, Fang F, Cheng L, Lin H, Wang K. Obvious Surface States Connecting to the Projected Triple Points in NaCl's Phonon Dispersion. Front Chem 2021; 9:789522. [PMID: 34869236 PMCID: PMC8634720 DOI: 10.3389/fchem.2021.789522] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/05/2021] [Accepted: 10/18/2021] [Indexed: 12/03/2022] Open
Abstract
With the development of computer technology and theoretical chemistry, the speed and accuracy of first-principles calculations have significantly improved. Using first-principles calculations to predict new topological materials is a hot research topic in theoretical and computational chemistry. In this work, we focus on a well-known material, sodium chloride (NaCl), and propose that the triple point (TP), quadratic contact triple point (QCTP), linear and quadratic nodal lines can be found in the phonon dispersion of NaCl with Fm3¯ m type structure. More importantly, we propose that the clear surface states connected to the projected TP and QCTP are visible on the (001) surface. It is hoped that further experimental investigation and verification for these properties as mentioned above.
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Affiliation(s)
- Li Zhang
- 'College of Mechanics, Changchun Institute of Technology, Changchun, China
| | - Fang Fang
- Engineering and Technology Center, The Fourth Medical College of Harbin Medical University, Harbin, China
| | - Lixin Cheng
- Engineering and Technology Center, The Fourth Medical College of Harbin Medical University, Harbin, China
| | - Huiming Lin
- School of Chemistry, Harbin Normal University, Harbin, China
| | - Kai Wang
- Engineering and Technology Center, The Fourth Medical College of Harbin Medical University, Harbin, China
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Phong PN, Ngoc NT, Lam PT, Nguyen MT, Nguyen HV. From half-metallic to magnetic semiconducting triazine g-C 4N 3: computational designs and insight. RSC Adv 2021; 11:38944-38948. [PMID: 35492469 PMCID: PMC9044481 DOI: 10.1039/d1ra05348e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/12/2021] [Accepted: 11/27/2021] [Indexed: 01/15/2023] Open
Abstract
We have given, for the first time, physicochemical insight into the electronic structure routes from half-metallic to magnetic semiconducting triazine g-C4N3. To this end, three material designs have been proposed using density functional calculations. In one design, this half-metal is first made semiconducting via hydrogenation, then tailored with B and N atomic species, which gives a new prototype of the antiferromagnetic semiconductor monolayer HC4N3BN. In the others, it can be rendered spin gapless semiconducting with H and B or C, followed by F or O tailoring, which eventually leads to the two new bipolar ferromagnetic semiconductors HC4N3BF and HC4N3CO. These monolayers are considered to be novel materials in spintronics.
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Affiliation(s)
- Pham Nam Phong
- School of Engineering Physics, Hanoi University of Science and Technology (HUST) 1 Dai Co Viet Road Hanoi Vietnam +84 24 3869 3498 +84 24 3869 3350
| | - Nguyen Thi Ngoc
- School of Engineering Physics, Hanoi University of Science and Technology (HUST) 1 Dai Co Viet Road Hanoi Vietnam +84 24 3869 3498 +84 24 3869 3350
| | - Pham Thanh Lam
- School of Engineering Physics, Hanoi University of Science and Technology (HUST) 1 Dai Co Viet Road Hanoi Vietnam +84 24 3869 3498 +84 24 3869 3350
| | - Manh-Thuong Nguyen
- Institute of Physics, Vietnam Academy of Science and Technology (VAST) 10 Dao Tan Street Hanoi Vietnam
| | - Huy-Viet Nguyen
- Institute of Physics, Vietnam Academy of Science and Technology (VAST) 10 Dao Tan Street Hanoi Vietnam
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Chatterjee S, Chatterjee S, Giri S, Majumdar S. Transport properties of Heusler compounds and alloys. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:013001. [PMID: 34521079 DOI: 10.1088/1361-648x/ac268c] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2021] [Accepted: 09/14/2021] [Indexed: 06/13/2023]
Abstract
Heusler compounds are a large group of intermetallic compositions with versatile material properties. In recent times, they are found to be important for their practical applications in the fields of spintronics and shape memory effect. Interestingly, their physical properties can be easily tuned by varying the valence electron concentration through proper doping and substitution. Empirical laws concerning the valence electron concentration, such as Slater-Pauling or Hume-Rothery rules are found to be useful in predicting their electronic, magnetic and structural properties quite accurately. Electrical transport measurements are simple laboratory-based techniques to gather a handful of information on the electronic properties of metals and semiconductors. The present review aimed to provide a comprehensive view of the transport in 3dand 4dtransition metal-based bulk Heusler compositions. The main emphasis is given on resistivity, magnetoresistance, Hall effect, thermopower and spin-dependent transport in spintronics devices. The review primarily focuses on magnetic Heusler compounds and alloys, albeit it also addresses several non-magnetic materials showing superconductivity or large thermopower.
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Affiliation(s)
- Snehashish Chatterjee
- School of Physical Sciences, Indian Association for the Cultivation of Science, 2A & B Raja S. C. Mullick Road, Jadavpur, Kolkata 700 032, India
| | - Souvik Chatterjee
- UGC-DAE Consortium for Scientific Research, Kolkata Centre, Sector III, LB-8, Salt Lake, Kolkata 700106, India
| | - Saurav Giri
- School of Physical Sciences, Indian Association for the Cultivation of Science, 2A & B Raja S. C. Mullick Road, Jadavpur, Kolkata 700 032, India
| | - Subham Majumdar
- School of Physical Sciences, Indian Association for the Cultivation of Science, 2A & B Raja S. C. Mullick Road, Jadavpur, Kolkata 700 032, India
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14
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Deng YX, Chen SZ, Zhang Y, Yu X, Xie ZX, Tang LM, Chen KQ. Penta-Hexa-Graphene Nanoribbons: Intrinsic Magnetism and Edge Effect Induce Spin-Gapless Semiconducting and Half-Metallic Properties. ACS APPLIED MATERIALS & INTERFACES 2020; 12:53088-53095. [PMID: 33197167 DOI: 10.1021/acsami.0c14768] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional materials with intrinsic long-range ordered magnetic moments have drawn a lot of attention. However, for practical applications, whether or not the magnetism is stable in their nanostructures has not been revealed. Here, based on the recently proposed magnetic penta-hexa-graphene, we study the electronic and magnetic properties of its nanoribbons (named PHGNRs). The results show that the PHGNRs have intrinsic robust magnetic moments that are different from zigzag graphene nanoribbons, where the magnetic moments caused by the edge effect are vulnerable. Moreover, the magnetic ground states, namely, ferromagnetic (FM) or antiferromagnetic (AFM), can be transformed by changing the width of PHGNRs. Most interestingly, under the FM ground state, the spin-polarized electronic properties reveal that the zigzag PHGNRs transform from spin-gapless semiconductors (SGSs) to half-metals, as the width of nanoribbons increases, while all the armchair PHGNRs are magnetic semiconductors. Furthermore, by considering different edge effects caused by the residual carbon atoms on the edges, the PHGNRs can further derive different types of SGSs, as well as half-metals. Our work suggests that the PHGNRs possessing intrinsic robust magnetic moments have potential applications in the field of spintronic devices.
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Affiliation(s)
- Yuan-Xiang Deng
- School of Electrical Information Engineering, Hunan Institute of Technology, Hengyang 421002, China
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Shi-Zhang Chen
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
| | - Yong Zhang
- Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002, China
| | - Xia Yu
- Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002, China
| | - Zhong-Xiang Xie
- Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002, China
| | - Li-Ming Tang
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Ke-Qiu Chen
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China
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