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Kim G, Jeong DW, Lee G, Lee S, Ma KY, Hwang H, Jang S, Hong J, Pak S, Cha S, Cho D, Kim S, Lim J, Lee YW, Shin HS, Jang AR, Lee JO. Unusual Raman Enhancement Effect of Ultrathin Copper Sulfide. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306819. [PMID: 38152985 DOI: 10.1002/smll.202306819] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2023] [Revised: 11/26/2023] [Indexed: 12/29/2023]
Abstract
In surface-enhanced Raman spectroscopy (SERS), 2D materials are explored as substrates owing to their chemical stability and reproducibility. However, they exhibit lower enhancement factors (EFs) compared to noble metal-based SERS substrates. This study demonstrates the application of ultrathin covellite copper sulfide (CuS) as a cost-effective SERS substrate with a high EF value of 7.2 × 104 . The CuS substrate is readily synthesized by sulfurizing a Cu thin film at room temperature, exhibiting a Raman signal enhancement comparable to that of an Au noble metal substrate of similar thickness. Furthermore, computational simulations using the density functional theory are employed and time-resolved photoluminescence measurements are performed to investigate the enhancement mechanisms. The results indicate that polar covalent bonds (Cu─S) and strong interlayer interactions in the ultrathin CuS substrate increase the probability of charge transfer between the analyte molecules and the CuS surface, thereby producing enhanced SERS signals. The CuS SERS substrate demonstrates the selective detection of various dye molecules, including rhodamine 6G, methylene blue, and safranine O. Furthermore, the simplicity of CuS synthesis facilitates large-scale production of SERS substrates with high spatial uniformity, exhibiting a signal variation of less than 5% on a 4-inch wafer.
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Affiliation(s)
- Gwangwoo Kim
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
- Department of Engineering Chemistry, Chungbuk National University, Chungdae-ro 1, Cheongju, 28644, Republic of Korea
| | - Du Won Jeong
- Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Gajeong-ro 141, Daejeon, 34114, Republic of Korea
- Department of Physics, Sungkyungkwan University (SKKU), Seobu-Ro 2066, Suwon, 16419, Republic of Korea
| | - Geonhee Lee
- Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Gajeong-ro 141, Daejeon, 34114, Republic of Korea
| | - Suok Lee
- Department of Energy Systems, Soonchunhyang University, Soonchunhyang-ro 2, Asan, 31538, Republic of Korea
| | - Kyung Yeol Ma
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Hyuntae Hwang
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Seunghun Jang
- Chemical Data-Driven Research Center, Korea Research Institute of Chemical Technology (KRICT), Gajeong-ro 141, Daejeon, 34114, Republic of Korea
| | - John Hong
- School of Materials Science and Engineering, Kookmin University, Jeongneung-ro 77, Seoul, 02707, Republic of Korea
| | - Sangyeon Pak
- School of Electronic and Electrical Engineering, Hongik University, Seoul, 04066, Republic of Korea
| | - SeungNam Cha
- Department of Physics, Sungkyungkwan University (SKKU), Seobu-Ro 2066, Suwon, 16419, Republic of Korea
| | - Donghwi Cho
- Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Gajeong-ro 141, Daejeon, 34114, Republic of Korea
| | - Sunkyu Kim
- Graduate School of Energy Science and Technology, Chungnam National University, Daejeon, 34134, Republic of Korea
| | - Jongchul Lim
- Graduate School of Energy Science and Technology, Chungnam National University, Daejeon, 34134, Republic of Korea
| | - Young-Woo Lee
- Department of Energy Systems, Soonchunhyang University, Soonchunhyang-ro 2, Asan, 31538, Republic of Korea
| | - Hyeon Suk Shin
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - A-Rang Jang
- Division of Electrical, Electronic and Control Engineering, Kongju National University, Cheonan-daero 1223-24, Cheonan, 31080, Republic of Korea
| | - Jeong-O Lee
- Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Gajeong-ro 141, Daejeon, 34114, Republic of Korea
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Cao H, Luo Y, Jiao W, Lei W, Han S, Liu H. Stacking-induced phonon transport engineering of siligene. NANOTECHNOLOGY 2024; 35:185702. [PMID: 38271731 DOI: 10.1088/1361-6528/ad22b4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2023] [Accepted: 01/24/2024] [Indexed: 01/27/2024]
Abstract
Tunable phonon transport properties of two-dimensional materials are desirable for effective heat management in various application scenarios. Here, we demonstrate by first-principles calculations and Boltzmann transport theory that the lattice thermal conductivity of siligene could be efficiently engineered by forming various stacking configurations. Unlike few-layer graphene, the stacked siligenes are found to be covalently bonded along the out-of-plane direction, which leads to unique dependence of the thermal conductivity on both the stacking order and layer number. Due to the restricted flexural phonon scattering induced by the horizontal reflection symmetry, the AA stacking configuration of bilayer siligene exhibits obviously higher thermal conductivity compared with the AB stacking. In addition, we observe increasing thermal conductivity with the layer number, as evidenced by the reduced phonon scattering phase space and Grüneisen parameter. Interestingly, the Fuchs-Sondheimer model works well for the thickness-dependent thermal conductivity of stacked siligenes.
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Affiliation(s)
- Haibin Cao
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yufeng Luo
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Wenyan Jiao
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Wen Lei
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Shihao Han
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Huijun Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
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3
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Guo YT, Yi SS. Recent Advances in the Preparation and Application of Two-Dimensional Nanomaterials. MATERIALS (BASEL, SWITZERLAND) 2023; 16:5798. [PMID: 37687495 PMCID: PMC10488888 DOI: 10.3390/ma16175798] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2023] [Revised: 08/16/2023] [Accepted: 08/22/2023] [Indexed: 09/10/2023]
Abstract
Two-dimensional nanomaterials (2D NMs), consisting of atoms or a near-atomic thickness with infinite transverse dimensions, possess unique structures, excellent physical properties, and tunable surface chemistry. They exhibit significant potential for development in the fields of sensing, renewable energy, and catalysis. This paper presents a comprehensive overview of the latest research findings on the preparation and application of 2D NMs. First, the article introduces the common synthesis methods of 2D NMs from both "top-down" and "bottom-up" perspectives, including mechanical exfoliation, ultrasonic-assisted liquid-phase exfoliation, ion intercalation, chemical vapor deposition, and hydrothermal techniques. In terms of the applications of 2D NMs, this study focuses on their potential in gas sensing, lithium-ion batteries, photodetection, electromagnetic wave absorption, photocatalysis, and electrocatalysis. Additionally, based on existing research, the article looks forward to the future development trends and possible challenges of 2D NMs. The significance of this work lies in its systematic summary of the recent advancements in the preparation methods and applications of 2D NMs.
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Affiliation(s)
| | - Sha-Sha Yi
- College of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China;
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4
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Brkić AL, Supina A, Čapeta D, Dončević L, Ptiček L, Mandić Š, Racané L, Delač I. Influence of Solvents and Adsorption of Organic Molecules on the Properties of CVD Synthesized 2D MoS 2. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2115. [PMID: 37513127 PMCID: PMC10383348 DOI: 10.3390/nano13142115] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/06/2023] [Revised: 07/14/2023] [Accepted: 07/17/2023] [Indexed: 07/30/2023]
Abstract
We present a simple method for modification of 2D materials by drop-casting of the organic molecule in solution on the 2D material under ambient conditions. Specifically, we investigated the adsorption of 6-(4,5-Dihydro-1H-imidazol-3-ium-2-yl)-2-(naphthalene-2-yl)benzothiazole methanesulfonate (L63MS) organic molecule on 2D MoS2. To better understand the effect of the organic molecule on the 2D material, we also investigated the impact of solvents alone on the materials' properties. The MoS2 samples were synthesized using ambient pressure chemical vapor deposition. Atomic force microscopy, Raman spectroscopy, photoluminescence spectroscopy and optical microscopy were used to characterize the samples. The measurements were performed after synthesis, after the drop-casting of solvents and after the drop-casting of organic molecule solutions. Our results indicate that the used organic molecule effectively adsorbs on and prompts discernible changes in the (opto)electronic properties of the 2D material. These changes encompass variations in the Raman spectra shape, alterations in the photoluminescence (PL) signal characteristics and modifications in excitonic properties. Such alterations can be linked to various phenomena including doping, bandgap modifications, introduction or healing of defects and that the solvent plays a crucial role in the process. Our study provides insights into the modification of 2D materials under ambient conditions and highlights the importance of solvent selection in the process.
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Affiliation(s)
- Antun Lovro Brkić
- Center for Advanced Laser Techniques, Institute of Physics, Bijenička Cesta 46, 10000 Zagreb, Croatia; (A.L.B.)
- Physics Department, Faculty of Mathematics and Physics, University of Ljubljana, Jadranska 19, SI-1000 Ljubljana, Slovenia
| | - Antonio Supina
- Center for Advanced Laser Techniques, Institute of Physics, Bijenička Cesta 46, 10000 Zagreb, Croatia; (A.L.B.)
- Department Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, 8700 Leoben, Austria
| | - Davor Čapeta
- Center for Advanced Laser Techniques, Institute of Physics, Bijenička Cesta 46, 10000 Zagreb, Croatia; (A.L.B.)
| | - Lucija Dončević
- Division of Molecular Medicine, Ruđer Bošković Institute, Bijenička 54, 10000 Zagreb, Croatia
| | - Lucija Ptiček
- University of Zagreb, Faculty of Textile Technology, Prilaz baruna Filipovića 28a, 10000 Zagreb, Croatia
| | - Šimun Mandić
- Center for Advanced Laser Techniques, Institute of Physics, Bijenička Cesta 46, 10000 Zagreb, Croatia; (A.L.B.)
| | - Livio Racané
- University of Zagreb, Faculty of Textile Technology, Prilaz baruna Filipovića 28a, 10000 Zagreb, Croatia
| | - Ida Delač
- Center for Advanced Laser Techniques, Institute of Physics, Bijenička Cesta 46, 10000 Zagreb, Croatia; (A.L.B.)
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5
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Wang S, Liu X, Zhou P. The Road for 2D Semiconductors in the Silicon Age. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106886. [PMID: 34741478 DOI: 10.1002/adma.202106886] [Citation(s) in RCA: 33] [Impact Index Per Article: 16.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Revised: 10/21/2021] [Indexed: 06/13/2023]
Abstract
Continued reduction in transistor size can improve the performance of silicon integrated circuits (ICs). However, as Moore's law approaches physical limits, high-performance growth in silicon ICs becomes unsustainable, due to challenges of scaling, energy efficiency, and memory limitations. The ultrathin layers, diverse band structures, unique electronic properties, and silicon-compatible processes of 2D materials create the potential to consistently drive advanced performance in ICs. Here, the potential of fusing 2D materials with silicon ICs to minimize the challenges in silicon ICs, and to create technologies beyond the von Neumann architecture, is presented, and the killer applications for 2D materials in logic and memory devices to ease scaling, energy efficiency bottlenecks, and memory dilemmas encountered in silicon ICs are discussed. The fusion of 2D materials allows the creation of all-in-one perception, memory, and computation technologies beyond the von Neumann architecture to enhance system efficiency and remove computing power bottlenecks. Progress on the 2D ICs demonstration is summarized, as well as the technical hurdles it faces in terms of wafer-scale heterostructure growth, transfer, and compatible integration with silicon ICs. Finally, the promising pathways and obstacles to the technological advances in ICs due to the integration of 2D materials with silicon are presented.
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Affiliation(s)
- Shuiyuan Wang
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Xiaoxian Liu
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
- Frontier Institute of Chip and System, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
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6
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Chen F, Cao D, Li J, Yan Y, Wu D, Zhang C, Gao L, Guo Z, Ma S, Yu H, Lin P. Solution-processed thickness engineering of tellurene for field-effect transistors and polarized infrared photodetectors. Front Chem 2022; 10:1046010. [PMID: 36311419 PMCID: PMC9606353 DOI: 10.3389/fchem.2022.1046010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/16/2022] [Accepted: 10/04/2022] [Indexed: 11/16/2022] Open
Abstract
Research on elemental 2D materials has been experiencing a renaissance in the past few years. Of particular interest is tellurium (Te), which possesses many exceptional properties for nanoelectronics, photonics, and beyond. Nevertheless, the lack of a scalable approach for the thickness engineering and the local properties modulation remains a major obstacle to unleashing its full device potential. Herein, a solution-processed oxidative etching strategy for post-growth thickness engineering is proposed by leveraging the moderate chemical reactivity of Te. Large-area ultrathin nanosheets with well-preserved morphologies could be readily obtained with appropriate oxidizing agents, such as HNO2, H2O2, and KMnO4. Compared with the conventional physical thinning approaches, this method exhibits critical merits of high efficiency, easy scalability, and the capability of site-specific thickness patterning. The thickness reduction leads to substantially improved gate tunability of field-effect transistors with an enhanced current switching ratio of ∼103, promoting the applications of Te in future logic electronics. The response spectrum of Te phototransistors covers the full range of short-wave infrared wavelength (1–3 μm), and the room-temperature responsivity and detectivity reach 0.96 AW-1 and 2.2 × 109 Jones at the telecom wavelength of 1.55 μm, together with a favorable photocurrent anisotropic ratio of ∼2.9. Our study offers a new approach to tackling the thickness engineering issue for solution-grown Te, which could help realize the full device potential of this emerging p-type 2D material.
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Affiliation(s)
- Fangfang Chen
- School of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China
| | - Dingwen Cao
- School of Physics, Henan Normal University, XinXiang, China
| | - Juanjuan Li
- School of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China
| | - Yong Yan
- School of Physics, Henan Normal University, XinXiang, China
| | - Di Wu
- School of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China
| | - Cheng Zhang
- School of Materials Science and Engineering, National Joint Engineering Research Center for Abrasion Control and Molding of Metal Materials, Henan University of Science and Technology, Luoyang, China
| | - Lenan Gao
- School of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China
| | - Zhaowei Guo
- School of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China
| | - Shihong Ma
- School of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China
| | - Huihui Yu
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, China
- *Correspondence: Huihui Yu, ; Pei Lin,
| | - Pei Lin
- School of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China
- *Correspondence: Huihui Yu, ; Pei Lin,
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Zheng J, Fu L, He Y, Li K, Lu Y, Xue J, Liu Y, Dong C, Chen C, Tang J. Fabrication and characterization of ZnO/Se 1-xTe x solar cells. FRONTIERS OF OPTOELECTRONICS 2022; 15:36. [PMID: 36637622 PMCID: PMC9756246 DOI: 10.1007/s12200-022-00040-5] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2022] [Accepted: 06/26/2022] [Indexed: 06/16/2023]
Abstract
Selenium (Se) element is a promising light-harvesting material for solar cells because of the large absorption coefficient and prominent photoconductivity. However, the efficiency of Se solar cells has been stagnated for a long time owing to the suboptimal bandgap (> 1.8 eV) and the lack of a proper electron transport layer. In this work, we tune the bandgap of the absorber to the optimal value of Shockley-Queisser limit (1.36 eV) by alloying 30% Te with 70% Se. Simultaneously, ZnO electron transport layer is selected because of the proper band alignment, and the mild reaction at ZnO/Se0.7Te0.3 interface guarantees a good-quality heterojunction. Finally, a superior efficiency of 1.85% is achieved on ZnO/Se0.7Te0.3 solar cells.
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Affiliation(s)
- Jiajia Zheng
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
- China-EU Institute for Clean and Renewable Energy (ICARE), Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Liuchong Fu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yuming He
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Kanghua Li
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yue Lu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
- China-EU Institute for Clean and Renewable Energy (ICARE), Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Jiayou Xue
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
- China-EU Institute for Clean and Renewable Energy (ICARE), Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yuxuan Liu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Chong Dong
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Chao Chen
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
- China-EU Institute for Clean and Renewable Energy (ICARE), Huazhong University of Science and Technology, Wuhan, 430074, China
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8
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Singh P, Baek S, Yoo HH, Niu J, Park JH, Lee S. Two-Dimensional CIPS-InSe van der Waal Heterostructure Ferroelectric Field Effect Transistor for Nonvolatile Memory Applications. ACS NANO 2022; 16:5418-5426. [PMID: 35234041 DOI: 10.1021/acsnano.1c09136] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Channel current conduction modulation with the spontaneous polarization of ferroelectric films in ferroelectric field-effect transistors (FeFETs) has been widely investigated. Low interface quality and thermodynamic instability owing to the presence of dangling bonds in the conventional ferroelectrics have limited the memory retention and endurance of FeFETs. This, in turn, prevents their commercialization. However, the atomically thin nature of 2D ferroelectric, semiconducting, and insulating films facilitate the achievement of trap-free interfaces as van der Waal heterostructures (vdWHs) to develop FeFETs with long data retention and endurance characteristics. Here, we demonstrate a 2D vdWH FeFET fabricated with ferroelectric CuInP2S6 (CIPS), hexagonal boron nitride (h-BN) as the dielectric, and InSe as the ferroelectric semiconductor channel. The device shows an excellent performance as nonvolatile memory (NVM) with its large memory window (4.6 V at a voltage sweep of 5 V), high drain current on/off ratio (>104), high endurance, and long data retention (>104 s). These results demonstrate the considerable potential of vdWHs for the development of FeFETs for logic and NVM applications.
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Affiliation(s)
- Prashant Singh
- SKKUAdvanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
| | - Sungpyo Baek
- SKKUAdvanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
| | - Hyun Ho Yoo
- SKKUAdvanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
| | - Jingjie Niu
- SKKUAdvanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
| | - Jin-Hong Park
- SKKUAdvanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
| | - Sungjoo Lee
- SKKUAdvanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
- Department of Nano Engineering, Sungkyunkwan University, Suwon 440-746, Korea
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9
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Bhavyashree M, Rondiya SR, Hareesh K. Exploring the emerging applications of the advanced 2-dimensional material borophene with its unique properties. RSC Adv 2022; 12:12166-12192. [PMID: 35481099 PMCID: PMC9023120 DOI: 10.1039/d2ra00677d] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2022] [Accepted: 03/28/2022] [Indexed: 12/11/2022] Open
Abstract
Borophene, a crystalline allotrope of monolayer boron, with a combination of triangular lattice and hexagonal holes, has stimulated wide interest in 2-dimensional materials and their applications. Although their properties are theoretically confirmed, they are yet to be explored and confirmed experimentally. In this review article, we present advancements in research on borophene, its synthesis, and unique properties, including its advantages for various applications with theoretical predictions. The uniqueness of borophene over graphene and other 2-dimensional (2D) materials is also highlighted along with their various structural stabilities. The strategy for its theoretical simulations, leading to the experimental synthesis, could also be helpful for the exploration of many newer 2D materials.
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Affiliation(s)
- M Bhavyashree
- School of Applied Sciences (Physics), REVA University Bengaluru-560064 India
- Department of Physics, R.V. College of Engineering Bengaluru-560059 India
- Center of Excellence on Macro-Electronics, Interdisciplinary Research Center, R.V. College of Engineering Bengaluru-560059 India
| | - Sachin R Rondiya
- School of Chemistry, Cardiff University Cardiff CF10 3AT Wales UK
| | - K Hareesh
- School of Applied Sciences (Physics), REVA University Bengaluru-560064 India
- Department of Physics, R.V. College of Engineering Bengaluru-560059 India
- Center of Excellence on Macro-Electronics, Interdisciplinary Research Center, R.V. College of Engineering Bengaluru-560059 India
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10
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Xie H, Li Z, Cheng L, Haidry AA, Tao J, Xu Y, Xu K, Ou JZ. Recent advances in the fabrication of 2D metal oxides. iScience 2022; 25:103598. [PMID: 35005545 PMCID: PMC8717458 DOI: 10.1016/j.isci.2021.103598] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022] Open
Abstract
Atomically thin two-dimensional (2D) metal oxides exhibit unique optical, electrical, magnetic, and chemical properties, rendering them a bright application prospect in high-performance smart devices. Given the large variety of both layered and non-layered 2D metal oxides, the controllable synthesis is the critical prerequisite for enabling the exploration of their great potentials. In this review, recent progress in the synthesis of 2D metal oxides is summarized and categorized. Particularly, a brief overview of categories and crystal structures of 2D metal oxides is firstly introduced, followed by a critical discussion of various synthesis methods regarding the growth mechanisms, advantages, and limitations. Finally, the existing challenges are presented to provide possible future research directions regarding the synthesis of 2D metal oxides. This work can provide useful guidance on developing innovative approaches for producing both 2D layered and non-layered nanostructures and assist with the acceleration of the research of 2D metal oxides.
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Affiliation(s)
- Huaguang Xie
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Zhong Li
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Liang Cheng
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Azhar Ali Haidry
- College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China
| | - Jiaqi Tao
- College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China
| | - Yi Xu
- School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China
| | - Kai Xu
- School of Engineering, RMIT University, Melbourne 3000, Australia
| | - Jian Zhen Ou
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
- School of Engineering, RMIT University, Melbourne 3000, Australia
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11
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Chen SB, Liu G, Yan WJ, Hu CE, Chen XR, Geng HY. Biaxial Tensile Strain-Induced Enhancement of Thermoelectric Efficiency of α-Phase Se 2Te and SeTe 2 Monolayers. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 12:40. [PMID: 35009989 PMCID: PMC8746480 DOI: 10.3390/nano12010040] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/04/2021] [Revised: 12/07/2021] [Accepted: 12/17/2021] [Indexed: 06/14/2023]
Abstract
Thermoelectric (TE) materials can convert waste heat into electrical energy, which has attracted great interest in recent years. In this paper, the effect of biaxial-tensile strain on the electronic properties, lattice thermal conductivity, and thermoelectric performance of α-phase Se2Te and SeTe2 monolayers are calculated based on density-functional theory and the semiclassical Boltzmann theory. The calculated results show that the tensile strain reduces the bandgap because the bond length between atoms enlarges. Moreover, the tensile strain strengthens the scatting rate while it weakens the group velocity and softens the phonon model, leading to lower lattice thermal conductivity kl. Simultaneously, combined with the weakened kl, the tensile strain can also effectively modulate the electronic transport coefficients, such as the electronic conductivity, Seebeck coefficient, and electronic thermal conductivity, to greatly enhance the ZT value. In particular, the maximum n-type doping ZT under 1% and 3% strain increases up to six and five times higher than the corresponding ZT without strain for the Se2Te and SeTe2 monolayers, respectively. Our calculations indicated that the tensile strain can effectively enhance the thermoelectric efficiency of Se2Te and SeTe2 monolayers and they have great potential as TE materials.
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Affiliation(s)
- Shao-Bo Chen
- College of Physics, Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610064, China;
- College of Electronic and Information Engineering, Anshun University, Anshun 561000, China;
| | - Gang Liu
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, China;
| | - Wan-Jun Yan
- College of Electronic and Information Engineering, Anshun University, Anshun 561000, China;
| | - Cui-E Hu
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, China
| | - Xiang-Rong Chen
- College of Physics, Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610064, China;
| | - Hua-Yun Geng
- National Key Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, CAEP, Mianyang 621900, China;
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12
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Do TN, Nguyen ST, Nguyen CQ. Adjusting the electronic properties and contact types of graphene/F-diamane-like C 4F 2 van der Waals heterostructure: a first principles study. RSC Adv 2021; 11:37981-37987. [PMID: 35498061 PMCID: PMC9044009 DOI: 10.1039/d1ra06986a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/18/2021] [Accepted: 10/27/2021] [Indexed: 11/21/2022] Open
Abstract
Motivated by the successful exfoliation of two-dimensional F-diamane-like C4F2 monolayer and the superior properties of graphene-based vdW heterostructures, in this work, we perform a first principles study to investigate the atomic structure, electronic properties and contact types of the graphene/F-diamane-like C4F2 heterostructure. The graphene/C4F2 vdW heterostructure is structurally stable at room temperature. In the ground state, the graphene/C4F2 heterostructure forms n-type Schottky contact with a Schottky barrier height of 0.46/1.03 eV given by PBE/HSE06. The formation of the graphene/C4F2 heterostructure tends to decrease in the band gap of the semiconducting C4F2 layer, suggesting that such a heterostructure may have strong optical absorption. Furthermore, the electronic properties and contact types of the graphene/C4F2 heterostructure can be adjusted by applying an external electric field, which leads to the change in the Schottky barrier height and the transformation from Schottky to ohmic contact. Our findings reveal the potential of the graphene/C4F2 heterostructure as a tunable hybrid material with strong potential in electronic applications.
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Affiliation(s)
- Thi-Nga Do
- Laboratory of Magnetism and Magnetic Materials, Advanced Institute of Materials Science, Ton Duc Thang University Ho Chi Minh City Vietnam
- Faculty of Applied Sciences, Ton Duc Thang University Ho Chi Minh City Vietnam
| | - Son-Tung Nguyen
- Faculty of Electrical Engineering Technology, Hanoi University of Industry Hanoi 100000 Vietnam
| | - Cuong Q Nguyen
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
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13
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Singh J, Singh K, Kaur M, Sharma RK, Vij A, Kumar A. MoS2/FeS2 nanocomposite thin film: Structural, morphological, compositional, electrical and photodetection properties. Chem Phys Lett 2021. [DOI: 10.1016/j.cplett.2021.139047] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
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14
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Hess P. Bonding, structure, and mechanical stability of 2D materials: the predictive power of the periodic table. NANOSCALE HORIZONS 2021; 6:856-892. [PMID: 34494064 DOI: 10.1039/d1nh00113b] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
This tutorial review describes the ongoing effort to convert main-group elements of the periodic table and their combinations into stable 2D materials, which is sometimes called modern 'alchemy'. Theory is successfully approaching this goal, whereas experimental verification is lagging far behind in the synergistic interplay between theory and experiment. The data collected here gives a clear picture of the bonding, structure, and mechanical performance of the main-group elements and their binary compounds. This ranges from group II elements, with two valence electrons, to group VI elements with six valence electrons, which form not only 1D structures but also, owing to their variable oxidation states, low-symmetry 2D networks. Outside of these main groups reviewed here, predominantly ionic bonding may be observed, for example in group II-VII compounds. Besides high-symmetry graphene with its shortest and strongest bonds and outstanding mechanical properties, low-symmetry 2D structures such as various borophene and tellurene phases with intriguing properties are receiving increasing attention. The comprehensive discussion of data also includes bonding and structure of few-layer assemblies, because the electronic properties, e.g., the band gap, of these heterostructures vary with interlayer layer separation and interaction energy. The available data allows the identification of general relationships between bonding, structure, and mechanical stability. This enables the extraction of periodic trends and fundamental rules governing the 2D world, which help to clear up deviating results and to estimate unknown properties. For example, the observed change of the bond length by a factor of two alters the cohesive energy by a factor of four and the extremely sensitive Young's modulus and ultimate strength by more than a factor of 60. Since the stiffness and strength decrease with increasing atom size on going down the columns of the periodic table, it is important to look for suitable allotropes of elements and binaries in the upper rows of the periodic table when mechanical stability and robustness are issues. On the other hand, the heavy compounds are of particular interest because of their low-symmetry structures with exotic electronic properties.
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Affiliation(s)
- Peter Hess
- Institute of Physical Chemistry, INF 253, University of Heidelberg, 69120 Heidelberg, Germany.
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15
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Fan FR, Wang R, Zhang H, Wu W. Emerging beyond-graphene elemental 2D materials for energy and catalysis applications. Chem Soc Rev 2021; 50:10983-11031. [PMID: 34617521 DOI: 10.1039/c9cs00821g] [Citation(s) in RCA: 77] [Impact Index Per Article: 25.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
Elemental two-dimensional (2D) materials have emerged as promising candidates for energy and catalysis applications due to their unique physical, chemical, and electronic properties. These materials are advantageous in offering massive surface-to-volume ratios, favorable transport properties, intriguing physicochemical properties, and confinement effects resulting from the 2D ultrathin structure. In this review, we focus on the recent advances in emerging energy and catalysis applications based on beyond-graphene elemental 2D materials. First, we briefly introduce the general classification, structure, and properties of elemental 2D materials and the new advances in material preparation. We then discuss various applications in energy harvesting and storage, including solar cells, piezoelectric and triboelectric nanogenerators, thermoelectric devices, batteries, and supercapacitors. We further discuss the explorations of beyond-graphene elemental 2D materials for electrocatalysis, photocatalysis, and heterogeneous catalysis. Finally, the challenges and perspectives for the future development of elemental 2D materials in energy and catalysis are discussed.
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Affiliation(s)
- Feng Ru Fan
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, USA. .,Flex Laboratory, Purdue University, West Lafayette, Indiana 47907, USA
| | - Ruoxing Wang
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, USA. .,Flex Laboratory, Purdue University, West Lafayette, Indiana 47907, USA
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China. .,Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China.,Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, China
| | - Wenzhuo Wu
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, USA. .,Flex Laboratory, Purdue University, West Lafayette, Indiana 47907, USA.,Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA
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16
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Zhang Y, Xu W, Liu G, Zhang Z, Zhu J, Li M. Bandgap prediction of two-dimensional materials using machine learning. PLoS One 2021; 16:e0255637. [PMID: 34388173 PMCID: PMC8363013 DOI: 10.1371/journal.pone.0255637] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/18/2021] [Accepted: 07/20/2021] [Indexed: 11/18/2022] Open
Abstract
The bandgap of two-dimensional (2D) materials plays an important role in their applications to various devices. For instance, the gapless nature of graphene limits the use of this material to semiconductor device applications, whereas the indirect bandgap of molybdenum disulfide is suitable for electrical and photo-device applications. Therefore, predicting the bandgap rapidly and accurately for a given 2D material structure has great scientific significance in the manufacturing of semiconductor devices. Compared to the extremely high computation cost of conventional first-principles calculations, machine learning (ML) based on statistics may be a promising alternative to predicting bandgaps. Although ML algorithms have been used to predict the properties of materials, they have rarely been used to predict the properties of 2D materials. In this study, we apply four ML algorithms to predict the bandgaps of 2D materials based on the computational 2D materials database (C2DB). Gradient boosted decision trees and random forests are more effective in predicting bandgaps of 2D materials with an R2 >90% and root-mean-square error (RMSE) of ~0.24 eV and 0.27 eV, respectively. By contrast, support vector regression and multi-layer perceptron show that R2 is >70% with RMSE of ~0.41 eV and 0.43 eV, respectively. Finally, when the bandgap calculated without spin-orbit coupling (SOC) is used as a feature, the RMSEs of the four ML models decrease greatly to 0.09 eV, 0.10 eV, 0.17 eV, and 0.12 eV, respectively. The R2 of all the models is >94%. These results show that the properties of 2D materials can be rapidly obtained by ML prediction with high precision.
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Affiliation(s)
- Yu Zhang
- Department of Computer Science and Technology, Changchun Normal University, Changchun, China
- * E-mail: (YZ); (GL)
| | - Wenjing Xu
- Department of Computer Science and Technology, Changchun Normal University, Changchun, China
| | - Guangjie Liu
- Department of Computer Science and Technology, Changchun Normal University, Changchun, China
- * E-mail: (YZ); (GL)
| | - Zhiyong Zhang
- Department of Computer Science and Technology, Changchun Normal University, Changchun, China
| | - Jinlong Zhu
- Department of Computer Science and Technology, Changchun Normal University, Changchun, China
| | - Meng Li
- College of Information Science and Engineering, Shenyang University of Technology, Shenyang, China
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17
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Rahman MH, Islam MS, Islam MS, Chowdhury EH, Bose P, Jayan R, Islam MM. Phonon thermal conductivity of the stanene/hBN van der Waals heterostructure. Phys Chem Chem Phys 2021; 23:11028-11038. [PMID: 33942827 DOI: 10.1039/d1cp00343g] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
We use classical non-equilibrium molecular dynamics (NEMD) simulations to investigate the phonon thermal conductivity (PTC) of hexagonal boron nitride (hBN) supported stanene. At first, we examine the length dependent PTCs of bare stanene and hBN, and the stanene/hBN heterostructure and realize the dominance of the hBN layer to dictate the PTC in the heterostructure system. Afterward, we assess the length-independent bulk PTCs of these materials. The bulk PTCs at room temperature are found as ∼15.20 W m-1 K-1, ∼550 W m-1 K-1, and ∼232 W m-1 K-1 for bare stanene and hBN, and stanene/hBN, respectively. Moreover, our simulations reveal that bare stanene exhibits a substantially lower PTC compared to bare hBN, and the predicted PTC of stanene/hBN lies between those of stand-alone stanene and hBN. We also found that the PTC obtained for the stanene/hBN system from NEMD simulations nicely agrees with the theoretical formula developed to predict the PTC of heterostructures of two distinct materials. Temperature studies suggest that the PTC of the stanene/hBN heterostructure system follows a decreasing trend with increasing temperature. Additionally, corresponding phonon density of states (PDOS) and phonon dispersion data are provided to comprehensively understand the phonon properties of bare stanene and hBN, and stanene/hBN. Overall, this NEMD study would offer a deep understating towards the PTC of the stanene/hBN heterostructure and would widen the scope of its successful operations in future nanoelectronic, spintronic, and thermoelectric devices.
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Affiliation(s)
- Md Habibur Rahman
- Department of Mechanical Engineering, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh
| | - Md Shahriar Islam
- Department of Mechanical Engineering, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh
| | - Md Saniul Islam
- Department of Mechanical Engineering, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh
| | - Emdadul Haque Chowdhury
- Department of Mechanical Engineering, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh
| | - Pritom Bose
- Department of Mechanical Engineering, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh
| | - Rahul Jayan
- Department of Mechanical Engineering, Wayne State University, Detroit MI - 48202, USA.
| | - Md Mahbubul Islam
- Department of Mechanical Engineering, Wayne State University, Detroit MI - 48202, USA.
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18
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Singh K, Kaur G, Kaur M, Chauhan I, Kumar M, Thakur A, Kumar A. Photoconductivity of gold nanoparticles loaded boron nitride/nickel oxide nanocomposites. Chem Phys Lett 2021. [DOI: 10.1016/j.cplett.2020.138153] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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