Van der Waals Epitaxy of Bi2 Te2 Se/Bi2 O2 Se Vertical Heterojunction for High Performance Photodetector

Birdlike broadband neuromorphic visual sensor arrays for fusion imaging

Wearable visual bionic devices, fueled by advancements in artificial intelligence, are making remarkable progress. However, traditional silicon vision chips often grapple with high energy losses and challenges in emulating complex biological behaviors. In this study, we constructed a van der Waals P3HT/GaAs nanowires P-N junction by carefully directing the arrangement of organic molecules. Combined with a Schottky junction, this facilitated multi-faceted birdlike visual enhancement, including broadband non-volatile storage, low-light perception, and a near-zero power consumption operating mode in both individual devices and 5 × 5 arrays on arbitrary substrates. Specifically, we realized over 5 bits of in-memory sensing and computing with both negative and positive photoconductivity. When paired with two imaging modes (visible and UV), our reservoir computing system demonstrated up to 94% accuracy for color recognition. It achieved motion and UV grayscale information extraction (displayed with sunscreen), leading to fusion visual imaging. This work provides a promising co-design of material and device for a broadband and highly biomimetic optoelectronic neuromorphic system.

Ultrahigh Responsivity and Robust Semiconducting Fiber Enabled by Molecular Soldering-Governed Defect Engineering for Smart Textile Optoelectronics

Semiconducting fibers (SCFs) are of significant interest to design next-generation wearable and comfortable optoelectronics that seamlessly integrate with textiles. However, the practical applications of current SCFs are always limited by poor optoelectronic performance and low mechanical robustness caused by uncontrollable multiscale structural defects. Herein, a versatile in situ molecular soldering-governed defect engineering strategy is proposed to construct ultrahigh responsivity and robust wet-spun MoS2 SCFs, by using a π-conjugated dithiolated molecule to simultaneously patch microscale sulfur vacancies within MoS2 nanosheets, diminish mesoscale interlayer voids/wrinkles, promote macroscale orientation, build long-range photoelectron percolation bridges, and provide n-doping effect. The derived MoS2 SCFs exhibit over two orders of magnitude higher responsivity (144.3 A W-1) than previously reported fiber photodetectors, 37.3-fold faster photoresponse speed (52 ms) than pristine counterpart, and remarkable bending robustness (retain 94.2% of the initial photocurrent after 50 000 bending-flattening cycles). Such superior robustness and photodetection capacity of MoS2 SCFs further enable large-scale weaving of reliable smart textile optoelectronic systems, such as direction-identifiable wireless light alarming system, modularized mechano-optical communication system, and indoor light-controlled IoT system. This work offers a universal strategy for the scalable production of mechanically robust and high-performance SCFs, opening up exciting possibilities for large-scale integration of wearable optoelectronics.

Revealing Enhanced Optical Nonlinearity and Robust Ferromagnetism in Atomically Sharp Stacking Binary-Ternary Magnetic Heterostructures

Two-dimensional (2D) materials provide a versatile platform for the integration of diverse crystals, enabling the formation of heterostructures with intriguing functionalities. Coherently growing 2D heterostructures are highly desirable for property manipulation due to their strong interfacial interaction. In this work, we propose a general synthesis approach and provide insight into well-designed 2D binary-ternary magnetic heterostructures. Atomically sharp interfaces were achieved in typical lateral and vertical Cr1+mSe2(001)/CuCr2Se4(111) heterostructures owing to their similar lattice arrangement, with the observation of a significant enhancement of optical second-harmonic generation. Further magnetism measurements revealed a Curie temperature up to 360 K and thickness- and temperature-dependent magnetism in this heterostructure. Additionally, we synthesized three analogous 2D magnetic heterostructures in Fe-Cr-S, Co-Cr-S, and Cu-Cr-S systems, demonstrating the ubiquitous nature of the coherent heteroepitaxy. Our work involves the development of an innovative platform for investigating the underlying physics and potential applications of 2D binary-ternary heterostructures as well as the fabrication of associated functional devices.

Two-dimensional layered material photodetectors: what could be the upcoming downstream applications beyond prototype devices?

With distinctive advantages spanning excellent flexibility, rich physical properties, strong electrostatic tunability, dangling-bond-free surface, and ease of integration, 2D layered materials (2DLMs) have demonstrated tremendous potential for photodetection. However, to date, most of the research enthusiasm has been merely focused on developing novel prototype devices. In the past few years, researchers have also been devoted to developing various downstream applications based on 2DLM photodetectors to contribute to promoting them from fundamental research to practical commercialization, and extensive accomplishments have been realized. In spite of the remarkable advancements, these fascinating research findings are relatively scattered. To date, there is still a lack of a systematic and profound summarization regarding this fast-evolving domain. This is not beneficial to researchers, especially researchers just entering this research field, who want to have a quick, timely, and comprehensive inspection of this fascinating domain. To address this issue, in this review, the emerging downstream applications of 2DLM photodetectors in extensive fields, including imaging, health monitoring, target tracking, optoelectronic logic operation, ultraviolet monitoring, optical communications, automatic driving, and acoustic signal detection, have been systematically summarized, with the focus on the underlying working mechanisms. At the end, the ongoing challenges of this rapidly progressing domain are identified, and the potential schemes to address them are envisioned, which aim at navigating the future exploration as well as fully exerting the pivotal roles of 2DLMs towards the practical optoelectronic industry.

Prediction of single-layer antimony oxyselenide (Sb2O2Se2): metal-to-semiconductor transition via hydrogenation

In this study, the structural, electronic, vibrational, and mechanical properties of single-layer Antimony Oxyselenide (Sb2O2Se2) and its hydrogenated structure (Sb2O2Se2H2) are investigated by performing density functional theory-based first principles calculations. Geometry optimizations reveal that single-layer Sb2O2Se2crystallizes in tetragonal structure which is shown to possess dynamical stability by means of phonon band dispersions. In addition, the mechanical stability of the predicted single layer is satisfied via the linear-elastic parameters. Electronically, it is revealed that single-layer Sb2O2Se2exhibits metallic behavior whose highest occupied states are found to arise from the surface Se atoms, may be an indication for tuning the electronic features via surface functionalization. For the surface modification of Sb2O2Se2, top of each Se atom is saturated with a H atom and fully hydrogenated single-layer Sb2O2Se2H2is shown to be an in-plane anisotropic structure. Phonon band dispersion calculations indicate the dynamical stability of Sb2O2Se2H2. Mechanically stable Sb2O2Se2H2is found to possess anisotropic linear-elastic behavior, which is much softer than its pristine structure. Moreover, electronically a metallic-to-semiconducting transition is shown to occur as the unoccupied Se-orbitals are saturated via H atoms. Our work offers insights into prediction of a novel single-layer material, namely Sb2O2Se2, and reports the chemically-driven semiconducting behavior via hydrogenation, which may lead to the use of hydrogenated structure in solar cell, photoelectrode, or photocatalyst applications owing to its suitable band gap.

Anisotropic optical property of ferroelectric Bi2O2X(X = S,Se,Te) monolayer and strain engineering

Based on the first-principles calculations, ferroelectricBi2O2X(X=S,Se,Te)monolayers with unequivalent in-plane lattice constants are confirmed to be the ground state, which is consistent with the experiment result (Ghoshet al2019Nano Lett.195703-09), and the anisotropic optical property is firstly investigated. We find that the polarizations ofBi2O2Xmonolayers points along the direction ofa-axis, andBi2O2Temonolayer process the largest polarization. Furthermore, both the biaxial and uniaxial strains are favor for the enhancement of polarization ofBi2O2Xmonolayers. It should be mentioned that the type of band gap will convert from indirect to direct forBi2O2Temonolayer when thea-axial tensile strain is larger than 2%. At last, the optical absorption coefficient forBi2O2Xmonolayers are calculated, and we obtain thatBi2O2Temonolayer has the strongest optical absorption within the range of visible light, the anisotropy and possible strain engineering to improve the optical absorption are discussed in detail. Our findings are significant in fields of optoelectronics and photovoltaics.

Efficient Carrier Transport in 2D Bi2O2Se/CsBi3I10 Perovskite Heterojunction Enables Highly-Sensitive Broadband Photodetection

2D Bi2O2Se has recently garnered significant attention in the electronics and optoelectronics fields due to its remarkable photosensitivity, broad spectral absorption, and excellent long-term environmental stability. However, the development of integrated Bi2O2Se photodetector with high performance and low-power consumption is limited by material synthesis method and the inherent high carrier concentration of Bi2O2Se. Here, a type-I heterojunction is presented, comprising 2D Bi2O2Se and lead-free bismuth perovskite CsBi3I10, for fast response and broadband detection. Through effective charge transfer and strong coupling effect at the interfaces of Bi2O2Se and CsBi3I10, the response time is accelerated to 4.1 µs, and the detection range is expanded from ultraviolet to near-infrared spectral regions (365-1500 nm). The as-fabricated photodetector exhibits a responsivity of 48.63 AW-1 and a detectivity of 1.22×1012 Jones at 808 nm. Moreover, efficient modulation of the dominant photocurrent generation mechanism from photoconductive to photogating effect leads to sensitive response exceeding 103 AW-1 for heterojunction-based photo field effect transistor (photo-FETs). Utilizing the large-scale growth of both Bi2O2Se and CsBi3I10, the as-fabricated integrated photodetector array demonstrates outstanding homogeneity and stability of photo-response performance. The proposed 2D Bi2O2Se/CsBi3I10 perovskite heterojunction holds promising prospects for the future-generation photodetector arrays and integrated optoelectronic systems.

Direct growth Bi2O2Se nanosheets on SiO2/Si substrate for high-performance and broadband photodetector

Bi2O2Se, a newly emerging two-dimensional (2D) material, has attracted significant attention as a promising candidate for optoelectronics applications due to its exceptional air stability and high mobility. Generally, mica and SrTiO3substrates with lattice matching are commonly used for the growth of high-quality 2D Bi2O2Se. Although 2D Bi2O2Se grown on these insulating substrates can be transferred onto Si substrate to ensure compatibility with silicon-based semiconductor processes, this inevitably introduces defects and surface states that significantly compromise the performance of optoelectronic devices. Herein we employ Bi2Se3as the evaporation source and oxygen reaction to directly grow Bi2O2Se nanosheets on Si substrate through a conventional chemical vapor deposition method. The photodetector based on the Bi2O2Se nanosheets on Si substrate demonstrates outstanding optoelectronics performance with a responsivity of 379 A W-1, detectivity of 2.9 × 1010Jones, and rapid response time of 0.28 ms, respectively, with 532 nm illumination. Moreover, it also exhibits a broadband photodetection capability across the visible to near-infrared range (532-1300 nm). These results suggest that the promising potential of Bi2O2Se nanosheets for high-performance and broadband photodetector applications.

Polarization-Sensitive Photodetector Based on High Crystallinity Quasi-1D BiSeI Nanowires Synthesized via Chemical Vapor Deposition

Bismuth chalcohalides (BiSeI and BiSI), a class of superior light absorbers, have recently garnered great attention owing to their promise in constructing next-generation optoelectronic devices. However, to date, the photodetection application of bismuth chalcohalides is still limited due to the challenge in controllable preparation. Herein, the synthesis of large-scale quasi-1D BiSeI nanowires via chemical vapor deposition growth is reported. By precisely tuning the growth temperature and the Se supply, it can effectively control the growth thermodynamics and kinetics of BiSeI crystal, and thus achieve high purity quasi-1D BiSeI nanowires with high crystal quality, uniform diameter, and tunable domain length. Theory and optical characterizations of the quasi-1D BiSeI nanowires reveal an indirect bandgap of 1.57 eV with prominent optical linear dichroism. As a result, the quasi-1D BiSeI nanowire-based photodetector demonstrates a broadband photoresponse (400-800 nm) with high responsivity of 5880 mA W-1 , fast response speed of 0.11 ms and superior air stability. More importantly, the photodetector displays strong polarization sensitivity (anisotropic ratio = 1.77) under the 532 nm light irradiation. This work will provide important guides to the synthesis of other quais-1D metal chalcohalides and shed light on their potential in constructing novel multifunctional optoelectronic devices.

Bi2Te2Se and Sb2Te3 heterostructure based photodetectors with high responsivity and broadband photoresponse: experimental and theoretical analysis

Topological insulators have emerged as one of the most promising candidates for the fabrication of novel electronic and optoelectronic devices due to the unique properties of nontrivial Dirac cones on the surface and a narrow bandgap in the bulk. In this work, the Sb2Te3 and Bi2Te2Se materials, and their heterostructure are fabricated by metal-organic chemical vapour deposition and evaporation techniques. Photodetection of these materials and their heterostructure shows that they detect light in a broadband range of 600 to 1100 nm with maximum photoresponse of Sb2Te3, Bi2Te2Se and Sb2Te3/Bi2Te2Se at 1100, 1000, and 1000 nm, respectively. The maximum responsivity values of Sb2Te3, Bi2Te2Se, and their heterostructure are 183, 341.8, and 245.9 A W-1 at 1000 nm, respectively. A computational study has also been done using density functional theory (DFT). Using the first-principles methods based on DFT, we have systematically investigated these topological insulators and their heterostructure's electronic and optical properties. The band structures of Sb2Te3 and Bi2Te2Se thin films (3 QL) and their heterostructure are calculated. The bandgaps of Sb2Te3 and Bi2Te2Se are 26.4 and 23 meV, respectively, while the Sb2Te3/Bi2Te2Se heterostructure shows metallic behaviour. For the optical properties, the dielectric function's real and imaginary parts are calculated using DFT and random phase approximation (RPA). It is observed that these topological materials and their heterostructure are light absorbers in a broadband range, with maximum absorption at 1.90, 2.40, and 3.21 eV.

Type-II Bi2O2Se/MoTe2 van der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance

In recent years, two-dimensional (2D) nonlayered Bi₂O₂Se-based electronics and optoelectronics have drawn enormous attention owing to their high electron mobility, facile synthetic process, stability to the atmosphere, and moderate narrow band gaps. However, 2D Bi₂O₂Se-based photodetectors typically present large dark current, relatively slow response speed, and persistent photoconductivity effect, limiting further improvement in fast-response imaging sensors and low-consumption broadband detection. Herein, a Bi₂O₂Se/2H-MoTe₂ van der Waals (vdWs) heterostructure obtained from the chemical vapor deposition (CVD) approach and vertical stacking is reported. The proposed type-II staggered band alignment desirable for suppression of dark current and separation of photoinduced carriers is confirmed by density functional theory (DFT) calculations, accompanied by strong interlayer coupling and efficient built-in potential at the junction. Consequently, a stable visible (405 nm) to near-infrared (1310 nm) response capability, a self-driven prominent responsivity (R) of 1.24 A·W^-1, and a high specific detectivity (D*) of 3.73 × 10¹¹ Jones under 405 nm are achieved. In particular, R, D*, fill factor, and photoelectrical conversion efficiency (PCE) can be enhanced to 4.96 A·W^-1, 3.84 × 10¹² Jones, 0.52, and 7.21% at V_g = -60 V through a large band offset originated from the n⁺-p junction. It is suggested that the present vdWs heterostructure is a promising candidate for logical integrated circuits, image sensors, and low-power consumption detection.

Self-Powered and Broadband Bismuth Oxyselenide/p-Silicon Heterojunction Photodetectors with Low Dark Current and Fast Response

Inorganic nanomaterials such as graphene, black phosphorus, and transition metal dichalcogenides have attracted great interest in developing optoelectronic devices due to their efficient conversion between light and electric signals. However, the zero band gap nature, the unstable chemical properties, and the low electron mobility constrained their wide applications. Bismuth oxyselenide (Bi₂O₂Se) is gradually showing great research significance in the optoelectronic field. Here, we develop a bismuth oxyselenide/p-silicon (Bi₂O₂Se/p-Si) heterojunction and design a self-powered and broadband Bi₂O₂Se/p-Si heterojunction photodetector with an ultrafast response (2.6 μs) and low dark current (10^-10 A without gate voltage regulation). It possesses a remarkable detectivity of 4.43 × 10¹² cm Hz^1/2 W^-1 and a self-powered photoresponse characteristic at 365-1550 nm (ultraviolet-near-infrared). Meanwhile, the Bi₂O₂Se/p-Si heterojunction photodetector also shows high stability and repeatability. It is expected that the proposed Bi₂O₂Se/p-Si heterojunction photodetector will expand the applications of Bi₂O₂Se in practical integrated circuits in the field of material science, energy development, optical imaging, biomedicine, and other applications.

Wafer-Scale Growth of Sb2Te3 Films via Low-Temperature Atomic Layer Deposition for Self-Powered Photodetectors

In this work, we demonstrate the performance of a silicon-compatible, high-performance, and self-powered photodetector. A wide detection range from visible (405 nm) to near-infrared (1550 nm) light was enabled by the vertical p-n heterojunction between the p-type antimony telluride (Sb₂Te₃) thin film and the n-type silicon (Si) substrates. A Sb₂Te₃ film with a good crystal quality, low density of extended defects, proper stoichiometry, p-type nature, and excellent uniformity across a 4 in. wafer was achieved by atomic layer deposition at 80 °C using (Et₃Si)₂Te and SbCl₃ as precursors. The processed photodetectors have a low dark current (∼20 pA), a high responsivity of (∼4.3 A/W at 405 nm and ∼150 mA/W at 1550 nm), a peak detectivity of ∼1.65 × 10¹⁴ Jones, and a quick rise time of ∼98 μs under zero bias voltage. Density functional theory calculations reveal a narrow, near-direct, type-II band gap at the heterointerface that supports a strong built-in electric field leading to efficient separation of the photogenerated carriers. The devices have long-term air stability and efficient switching behavior even at elevated temperatures. These high-performance and self-powered p-Sb₂Te₃/n-Si heterojunction photodetectors have immense potential to become reliable technological building blocks for a plethora of innovative applications in next-generation optoelectronics, silicon-photonics, chip-level sensing, and detection.

Bi2O2Se-based integrated multifunctional optoelectronics

The prominent light-matter interaction in 2D materials has become a pivotal research area that involves either an archetypal study of inherent mechanisms to explore such interactions or specific applications to assess the efficacy of such novel phenomena. With scientifically controlled light-matter interactions, various applications have been developed. Here, we report four diverse applications on a single structure utilizing the efficient photoresponse of Bi₂O₂Se with precisely tuned multiple optical wavelengths. First, the Bi₂O₂Se-based device performs the function of optoelectronic memory using UV (λ = 365 nm, 1.1 mW cm^-2) for the write-in process with SiO₂ as the charge trapping medium followed by a +1 V bias for read-out. Second, associative learning is mimicked with wavelengths of 525 nm and 635 nm. Third, using similar optical inputs, functions of logic gates "AND", "OR", "NAND", and "NOR" are realized with response current and resistance as outputs. Fourth is the demonstration of a 4 bit binary to the decimal converter using wavelengths of 740 nm (LSB), 595 nm, 490 nm, and 385 nm (MSB) as binary inputs and output response current regarded as equivalent decimal output. Our demonstration is a paradigm for Bi₂O₂Se-based devices to be an integral part of future advanced multifunctional electronic systems.