Two-dimensional monolayer designs for spintronics applications

Prediction of Two-Dimensional Janus Transition-Metal Chalcogenides: Robust Ferromagnetic Semiconductor with High Curie Temperature

Two-dimensional (2D) ferromagnetic semiconductors (FM SCs) provide an ideal platform for the development of quantum information technology in nanoscale devices. However, many developed 2D FM materials present a very low Curie temperature (TC), greatly limiting their application in spintronic devices. In this work, we predict two stable 2D transition metal chalcogenides, V3Se3X2 (X = S, Te) monolayers, by using first-principles calculations. Our results show that the V3Se3Te2 monolayer is a robust bipolar magnetic SC with a moderate bandgap of 0.53 eV, while V3Se3S2 is a direct band-gap FM SC with a bandgap of 0.59 eV. Interestingly, the ferromagnetisms of both monolayers are robust due to the V-S/Se/Te-V superexchange interaction, and TCs are about 406 K and 301 K, respectively. Applying biaxial strains, the FM SC to antiferromagnetic (AFM) SC transition is revealed at 5% and 3% of biaxial tensile strain. In addition, their high mechanical, dynamical, and thermal stabilities are further verified by phonon dispersion calculations and ab initio molecular dynamics (AIMD) calculations. Their outstanding attributes render the V3Se3Y2 (Y = S, Te) monolayers promising candidates as 2D FM SCs for a wide range of applications.

Turning Nonmagnetic Two-Dimensional Molybdenum Disulfides into Room-Temperature Ferromagnets by the Synergistic Effect of Lattice Stretching and Charge Injection

Exploring two-dimensional (2D) room-temperature magnetic materials in the field of 2D spintronics remains a formidable challenge. The vast array of nonmagnetic 2D materials provides abundant resources for exploration, but the strategy to convert them into intrinsic room-temperature magnets remains elusive. To address this challenge, we present a general strategy based on surface halogenation for the transition from nonmagnetism to intrinsic room-temperature ferromagnetism in 2D MoS2 based on first-principles calculations. The derived 2D halogenated MoS2 are half-semimetals with a high Curie temperature (TC) of 430-589 K and excellent stability. In-depth mechanistic studies revealed that this marvelous nonmagnetism-to-ferromagnetism transition originates from the modulation of the splitting as well as the occupation of the Mo d orbitals by the synergy of lattice stretching and charge injection induced by the surface halogenation. This work establishes a promising route for exploring 2D room-temperature magnetic materials from the abundant pool of 2D nonmagnetic counterparts.

Noncentrosymmetric two-dimensional Weyl semimetals in porous Si/Ge structures

In this work we predict a family of noncentrosymmetric two-dimensional (2D) Weyl semimetals (WSMs) composed by porous Ge and SiGe structures. These systems are energetically stable graphenylene-like structures with a buckling, spontaneously breaking the inversion symmetry. The nontrivial topological phase for these 2D systems occurs just below the Fermi level, resulting in nonvanishing Berry curvature around the Weyl nodes. The emerged WSMs are protected byC3symmetry, presenting one-dimensional edge Fermi-arcs connecting Weyl points with opposite chiralities. Our findings complete the family of Weyl in condensed-matter physics, by predicting the first noncentrosymmetric class of 2D WSMs.

Surface functionalization of graphene-like boron arsenide monolayer: a first-principles study

In this work, the effects of hydrogen (H) and oxygen (O) adsorption on the electronic and magnetic properties of graphene-like boron arsenide (BAs) monolayer are investigated using first-principles calculations. Pristine monolayer is a non-magnetic two-dimensional (2D) material, exhibiting direct gap semiconductor character with band gap of 0.75 (1.18) eV as calculated by generalized gradient approximation with Perdew-Burke-Ernzerhof (HSE06) functional. Four high-symmetry adsorption sites are considered, including on-top of B atom (TB), on-top of As atom (TAs), on-top of hollow site (TH), and on-top of bridge site (Tbridge). Using the criterion of adsorption energy, it is found thatTBandTbridgesites are favorable adsorption sites for H and O adatom, respectively. The analysis of electronic interactions indicate the charge transfer from host BAs monolayer to both adatoms. H adsorption conducts to the emergence of magnetic semiconductor nature in BAs monolayer with a total magnetic moment of 1.00 μB. Herein, the magnetism is originated mainly from H adatom and its neighbor As atoms. In contrast, the non-magnetic nature of BAs monolayer is preserved upon absorbing O atoms. In this case, the energy gap exhibits a slight reduction of 4%. Further, the effects of adatom coverage are also analyzed. The presented results suggest an effective modification of ground state electronic properties, as well as induction of new feature-rich properties to make new multifunctional 2D materials from non-magnetic BAs monolayer.

Intrinsic Nonlinear Hall Detection of the Néel Vector for Two-Dimensional Antiferromagnetic Spintronics

The respective unique merit of antiferromagnets and two-dimensional (2D) materials in spintronic applications inspires us to exploit 2D antiferromagnetic spintronics. However, the detection of the Néel vector in 2D antiferromagnets remains a great challenge because the measured signals usually decrease significantly in the 2D limit. Here we propose that the Néel vector of 2D antiferromagnets can be efficiently detected by the intrinsic nonlinear Hall (INH) effect which exhibits unexpected significant signals. As a specific example, we show that the INH conductivity of the monolayer manganese chalcogenides MnX (X=S, Se, Te) can reach the order of nm·mA/V^{2}, which is orders of magnitude larger than experimental values of paradigmatic antiferromagnetic spintronic materials. The INH effect can be accurately controlled by shifting the chemical potential around the band edge, which is experimentally feasible via electric gating or charge doping. Moreover, we explicitly demonstrate its 2π-periodic dependence on the Néel vector orientation based on an effective k·p model. Our findings enable flexible design schemes and promising material platforms for spintronic memory device applications based on 2D antiferromagnets.

Cr2XTe4(X = Si, Ge) monolayers: a new type of two-dimensional high-TCIsing ferromagnetic semiconductors with a large magnetic anisotropy

Two-dimensional (2D) ferromagnetic semiconductor (FMS) provides the ideal platform for the development of quantum information technology in nanoscale devices. However, most of them suffer from low Curie temperature and small magnetic anisotropic energy (MAE), severely limiting their practical application. In this work, by using first-principles calculations, we predicted two stable 2D materials, namely, Cr₂SiTe₄and Cr₂GeTe₄monolayers. Interestingly, both of them are intrinsic direct band gap FMSs (∼1 eV) with a large magnetization (8µ_Bf.u.^-1) and sizable MAE (∼500μ_eV Cr^-1). Monte Carlo simulations based on Heisenberg model suggest markedly high Curie temperatures of these monolayers (∼200 K). Besides, their high mechanical, dynamical, and thermal stabilities are further verified by elastic constants, phonon dispersion calculations, andab initiomolecular dynamics simulations. The outstanding attributes render Cr₂XTe₄(X = Si, Ge) monolayers broadening the candidates of 2D FMS for a wide range of applications.

Graphene-mediated ferromagnetic coupling in the nickel nano-islands/graphene hybrid

Nanoscale magnetic structures are fundamental to the design and fabrication of spintronic devices and have exhibited tremendous potential superior to the conventional semiconductor devices. However, most of the magnetic moments in nanostructures are unstable due to size effect, and the possible solution based on exchange coupling between nanomagnetism is still not clear. Here, graphene-mediated exchange coupling between nanomagnets is demonstrated by depositing discrete superparamagnetic Ni nano-islands on single-crystal graphene. The heterostructure exhibits ideal two-dimensional (2D) ferromagnetism with clear hysteresis loops and Curie temperature up to 80 K. The intrinsic ferromagnetism in graphene and antiferromagnetic exchange coupling between graphene and Ni nano-islands are revealed by x-ray magnetic circular dichroism and density functional theory calculations. The artificial 2D ferromagnets constitute a platform to study the coupling mechanism between complex correlated electronic systems and magnetism on the nanoscale, and the results and concept provide insights into the realization of spin manipulation in quantum computing.

Magnetization of Ultraviolet-Reduced Graphene Oxide Flakes in Composites Based on Polystyrene

This work presents our study results of the magnetization of multilayer UV-reduced graphene oxide (UV-rGO), polymer matrix (polystyrene), and a conjugated composite based on them. The mesoscopic structure of the composites synthesized in this work was studied by such methods as X-ray diffraction, SEM, as well as NMR-, IR- and Raman spectroscopy. The magnetization of the composites under investigation and their components was measured using a vibrating-sample magnetometer. It has been shown that the UV-reduction process leads to the formation of many submicron holes distributed inside rGO flakes, which can create edge defects, causing possibly magnetic order in the graphite samples under investigation on the mesoscopic level. This article provides an alternative explanation for the ferromagnetic hysteresis loop in UV-rGO on the base of superconductivity type-II.

Origin of Two-Dimensional Vertical Ferroelectricity in WTe2 Bilayer and Multilayer

In a recent report, room-temperature vertical ferroelectricity was experimentally shown in WTe₂ bilayer, while its mechanism of ferroelectric switching without vertical ion displacements remains unclarified. In this work, we reveal its origin by first-principles calculations that the polarization stems from uncompensated interlayer vertical charge transfer depending on in-plane translation, which can be switched upon interlayer sliding. The calculated results are consistent with experimental data, and a similar switching mechanism can be applied to a multilayer counterpart. Despite its small ferroelectric switching barrier and polarization, the in-plane rigidity of WTe₂ layer gives rise to a high Curie temperature. A moire pattern of ferroelectric domain superlattice can be formed and tuned upon a small-angle twist of bilayer, which is unique compared with traditional ferroelectrics. Similar interlayer translational ferroelectricity may exist in a series of van der Waals bilayers or even bulk phases.

Screening and Design of Novel 2D Ferromagnetic Materials with High Curie Temperature above Room Temperature

Two-dimensional (2D) intrinsic ferromagnets with high Curie temperature ( T_C) are desirable for spintronic applications. Using systematic first-principles calculations, we investigate the electronic and magnetic properties of 22 monolayer 2D materials with layered bulk phases. From these candidates, we screen out five ferromagnetic monolayer materials belonging to three types of structures: type i (ScCl, YCl, LaCl), type ii (LaBr₂), and type iii (CrSBr). Type i is a kind of metallic ferromagnetic material, whereas LaBr₂ and CrSBr of type ii and iii are small-bandgap ferromagnetic semiconductors with T_C near room temperature. Moreover, the ferromagnetic CrSBr monolayer possesses a large magnetic moment of ∼3 μ_B per Cr atom, originating from its distorted octahedron coordination. The robust ferromagnetism of the CrSBr monolayer is ascribed to the halogen-mediated (Cr-Br-Cr) and chalcogen-mediated (Cr-S-Cr) superexchange interactions; then, an isoelectronic substitution strategy is proposed to tailor the magnetic coupling strength. Hence, monolayer structures of CrSI, CrSCl, and CrSeBr with notably enhanced Curie temperature up to 500 K as well as favorable formation energy are designed. The moderate interlayer binding energy and high T_C make these monolayer ferromagnetic materials feasible for experimental synthesis and attractive as 2D spintronic devices.

Rhombohedral Lanthanum Manganite: A New Class of Dirac Half-Metal with Promising Potential in Spintronics

Dirac half-metals have drawn great scientific interests in spintronics because of their outstanding physical properties such as the large spin polarization and massless Dirac fermions. By using first-principles calculations, we investigate the perovskite-type lanthanum manganite (LaMnO₃) as a novel Dirac half-metal. Specifically, LaMnO₃ displays multiple linear band crossings in the spin-up direction, while it has a large band gap (∼5 eV) in the spin-down orientation. The intriguing linear band dispersions guarantee the ultrafast electron transport and the significant band differences between spin up and down directions promise the realization of 100% spin-polarized current and the extremely low energy consumption. Such a spin-polarized Dirac material is rare among perovskite-type compounds. By adopting the mean-field theory, the estimated Curie temperature T_c is 438.4 K. Importantly, the LaMnO₃ crystal has been experimentally realized 2 decades ago, which facilitates the future experimental validation. With the novel spin-polarized electronic properties and the high possibility of experimental fabrication, LaMnO₃ is ideal for the spintronic application.

Transition-Metal Dihydride Monolayers: A New Family of Two-Dimensional Ferromagnetic Materials with Intrinsic Room-Temperature Half-Metallicity

Two-dimensional (2D) ferromagnetic materials with intrinsic half-metallicity are highly desirable for nanoscale spintronic applications. Here, we predict a new and stable family of 2D transition-metal dihydride (MH₂; M = Sc, Ti, V, Cr, Fe, Co, Ni) monolayers with novel properties. Our density functional theory computation shows that CoH₂ and ScH₂ monolayers are ferromagnetic metals, while the others are antiferromagnetic semiconductors. In particular, the CoH₂ monolayer is a perfect half-metal with a wide spin gap of 3.48 eV. The ScH₂ monolayer can also possess half-metallicity through hole doping. Most importantly, our Monte Carlo simulations show that the CoH₂ monolayer possesses an above-room-temperature Curie point (339 K), while that of the ScH₂ monolayer can also reach 160 K. A synthetic approach is proposed to realize CoH₂ and ScH₂ monolayers in the laboratory. Notably, their half-metallicity can be well maintained on substrates. The new family of MH₂ monolayers are promising functional materials for spintronic applications due to their novel magnetic properties.

TaS3 Nanofibers: Layered Trichalcogenide for High-Performance Electronic and Sensing Devices

Layered materials, like transition metal dichalcogenides, exhibit broad spectra with outstanding properties with huge application potential, whereas another group of related materials, layered transition metal trichalcogenides, remains unexplored. Here, we show the broad application potential of this interesting structural type of layered tantalum trisulfide prepared in a form of nanofibers. This material shows tailorable attractive electronic properties dependent on the tensile strain applied to it. Structure of this so-called orthorhombic phase of TaS₃ grown in a form of long nanofibers has been solved and refined. Taking advantage of these capabilities, we demonstrate a highly specific impedimetric NO gas sensor based on TaS₃ nanofibers as well as construction of photodetectors with excellent responsivity and field-effect transistors. Various flexible substrates were used for the construction of a NO gas sensor. Such a device exhibits a low limit of detection of 0.48 ppb, well under the allowed value set by environmental agencies for NO_x (50 ppb). Moreover, this NO gas sensor also showed excellent selectivity in the presence of common interferences formed during fuel combustion. TaS₃ nanofibers produced in large scale exhibited excellent broad application potential for various types of devices covering nanoelectronic, optoelectronic, and gas-sensing applications.

Room-Temperature Ferromagnetism in Two-Dimensional Fe2Si Nanosheet with Enhanced Spin-Polarization Ratio

Searching experimental feasible two-dimensional (2D) ferromagnetic crystals with large spin-polarization ratio, high Curie temperature and large magnetic anisotropic energy is one key to develop next-generation spintronic nanodevices. Here, 2D Fe₂Si nanosheet, one counterpart of Hapkeite mineral discovered in meteorite with novel magnetism is proposed on the basis of first-principles calculations. The 2D Fe₂Si crystal has a slightly buckled triangular lattice with planar hexacoordinated Si and Fe atoms. The spin-polarized calculations with hybrid HSE06 function method indicate that 2D Fe₂Si is a ferromagnetic half metal at its ground state with 100% spin-polarization ratio at Fermi energy level. The phonon spectrum calculation and ab initio molecular dynamic simulation shows that 2D Fe₂Si crystal has a high thermodynamic stability and its 2D lattice can be retained at the temperature up to 1200 K. Monte Carlo simulations based on the Ising model predict a Curie temperature over 780 K in 2D Fe₂Si crystal, which can be further tuned by applying a biaxial strain. Moreover, 2D structure and strong in-plane Fe-Fe interaction endow Fe₂Si nanosheet sizable magnetocrystalline anisotropy energy with the magnitude of at least two orders larger than those of Fe, Co and Ni bulks. These novel magnetic properties render the 2D Fe₂Si crystal a very promising material for developing practical spintronic nanodevices.