Chemical Vapor Transport Reactions - A Historical Review

Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering

Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a promising platform for next generation optoelectronics and energy harvesting devices due to their exceptional characteristics at the nanoscale, such as tunable bandgap and strong light-matter interactions. The performance of TMD-based devices is mainly governed by the structure, composition, size, defects, and the state of their interfaces. Many properties of TMDs are influenced by the method of synthesis so numerous studies have focused on processing high-quality TMDs with controlled physicochemical properties. Plasma-based methods are cost-effective, well controllable, and scalable techniques that have recently attracted researchers' interest in the synthesis and modification of 2D TMDs. TMDs' reactivity toward plasma offers numerous opportunities to modify the surface of TMDs, including functionalization, defect engineering, doping, oxidation, phase engineering, etching, healing, morphological changes, and altering the surface energy. Here we comprehensively review all roles of plasma in the realm of TMDs. The fundamental science behind plasma processing and modification of TMDs and their applications in different fields are presented and discussed. Future perspectives and challenges are highlighted to demonstrate the prominence of TMDs and the importance of surface engineering in next-generation optoelectronic applications.

Facile preparation of conductive carbon-based membranes on dielectric substrates

Graphene has attracted much research attention due to its outstanding chemical and physical properties, such as its excellent electronic conductivity, making it as a useful carbon material for a variety of application fields of photoelectric functional devices. Herein, a new method for synthesizing conductive carbon membranes on dielectric substrates via a low-temperature thermodynamic driven process is developed. Although the obtained films exhibit low crystallinity, their electrical, wetting, and optical properties are acceptable in practice, which opens up a new avenue for the growth of carbon membranes and may facilitate the applications of transparent electrodes as potential plasma-free surface-enhanced Raman scattering (SERS) substrates.

Quasi-One-Dimensional Transition-Metal Chalcogenide Semiconductor (Nb4Se15I2)I2

The discovery of new low-dimensional transition-metal chalcogenides is contributing to the already prosperous family of these materials. In this study, needle-shaped single crystals of a quasi-one-dimensional (1D) material, (Nb₄Se₁₅I₂)I₂, were grown by chemical vapor transport, and the structure was solved by single-crystal X-ray diffraction (XRD). The structure has 1D (Nb₄Se₁₅I₂)_n chains along the [101] direction, with two I^- ions per formula unit directly bonded to Nb⁵⁺. The other two I^- ions are loosely coordinated and intercalated between the chains. Individual chains are chiral and stack along the b axis in opposing directions, giving space group P2₁/c. The phase purity and crystal structure were verified by powder XRD. Density functional theory calculations show (Nb₄Se₁₅I₂)I₂ to be a semiconductor with a direct band gap of around 0.6 eV. Resistivity measurements of bulk crystals and micropatterned devices demonstrate that (Nb₄Se₁₅I₂)I₂ has an activation energy of around 0.1 eV, and no anomaly or transition was seen upon cooling. Low-temperature XRD shows that (Nb₄Se₁₅I₂)I₂ does not undergo a structural phase transformation from room temperature to 8.2 K, unlike related compounds (NbSe₄)_nI (n = 2, 3, or 3.33), which all exhibit charge-density waves. This compound represents a well-characterized and valence-precise member of a diverse family of anisotropic transition-metal chalcogenides.

P-P Orbital Interaction Enables Single-Crystalline Semimetallic β-MoTe2 Nanosheets as Efficient Electrocatalysts for Lithium-Sulfur Batteries

The practical implementation of lithium-sulfur batteries (LSBs) has been impeded by the sluggish redox kinetics of lithium polysulfides (LiPSs) and shuttle effect of soluble LiPSs during charge/discharge. It is desirable to exploit materials combining superior electrical conductivity with excellent catalytic activity for use as electrocatalysts in LSBs. Herein, we report the employment of chemical vapor transport (CVT) method followed by an electrochemical intercalation process to fabricate high-quality single-crystalline semimetallic β-MoTe₂ nanosheets, which are utilized to manipulate the LiPSs conversion kinetics. The first-principles calculations prove that β-MoTe₂ could lower the Gibbs free-energy barrier for Li₂S₂ transformation to Li₂S. The wavefunction analysis demonstrates that the p-p orbital interaction between Te p and S p orbitals accounts for the strong electronic interaction between the β-MoTe₂ surface and Li₂S₂/Li₂S, making bonding and electron transfer more efficient. As a result, a β-MoTe₂/CNT@S-based LSB cell can deliver an excellent cycling performance with a low capacity fade rate of 0.11% per cycle over 300 cycles at 1C. Our work might not only provide a universal route to prepare high-quality single-crystalline transition-metal dichalcogenides (TMDs) nanosheets for use as electrocatalysts in LSBs, but also suggest a different viewpoint for the rational design of LiPSs conversion electrocatalysts.

Electrical Gating of the Charge-Density-Wave Phases in Two-Dimensional h-BN/1T-TaS2 Devices

We report on the electrical gating of the charge-density-wave phases and current in h-BN-capped three-terminal 1T-TaS₂ heterostructure devices. It is demonstrated that the application of a gate bias can shift the source-drain current-voltage hysteresis associated with the transition between the nearly commensurate and incommensurate charge-density-wave phases. The evolution of the hysteresis and the presence of abrupt spikes in the current while sweeping the gate voltage suggest that the effect is electrical rather than self-heating. We attribute the gating to an electric-field effect on the commensurate charge-density-wave domains in the atomic planes near the gate dielectric. The transition between the nearly commensurate and incommensurate charge-density-wave phases can be induced by both the source-drain current and the electrostatic gate. Since the charge-density-wave phases are persistent in 1T-TaS₂ at room temperature, one can envision memory applications of such devices when scaled down to the dimensions of individual commensurate domains and few-atomic plane thicknesses.

Na2Cu+[Cu2+ 3O](AsO4)2Cl and Cu3[Cu3O]2(PO4)4Cl2: two new structure types based upon chains of oxocentered tetrahedra

Single crystals of Na2Cu+[Cu2+ 3O](AsO4)2Cl (1) and Cu3[Cu3O]2(PO4)4Cl2 (2) were prepared by chemical vapor transport reactions. Both crystal structures are based upon the same [O2Cu6]8+ chains formed by corner-sharing (OCu4)6+ tetrahedra and interconnected by (TO4)3− (T = P, As) tetrahedra into porous {[OCu3](TO4)2Cl}3− frameworks. The channels within the frameworks are occupied by Na+, Cu+ and Cl− ions in the crystal structure of 1, whereas the channels in the structure of 2 contain edge-sharing CuO4Cl tetragonal pyramids. Both compounds are structurally related to the previously described synthetic Na2Cu+[Cu2+ 3O](PO4)2Cl and NaCu2+[Cu2+ 3O](PO4)2Cl. The compound 2 is structurally and chemically related to yaroshevskite, Cu3[Cu3O]2(VO4)4Cl2, a mineral discovered in volcanic fumaroles, but the two structure types are drastically different. The crystal chemical analysis of the title and related compounds allows to recognize a family of at least four compounds based upon {[OCu3](TO4)2Cl}3− frameworks with channels occupied by different chemical constituents.

Controllable synthesis of high-quality two-dimensional tellurium by a facile chemical vapor transport strategy

Recently, as an elementary material, tellurium (Te) has received widespread attention for its high carrier mobility, intriguing topological properties, and excellent environmental stability. However, it is difficult to obtain two-dimensional (2D) Te with high crystalline quality owing to its intrinsic helical chain structure. Herein, a facile strategy for controllable synthesis of high-quality 2D Te nanoflakes through chemical vapor transport in one step is reported. With carefully tuning the growth kinetics determined mainly by temperature, tellurium nanoflakes in lateral size of up to ∼40 μm with high crystallinity can be achieved. We also investigated the second harmonic generation of Te nanoflakes, which demonstrates that it can be used as frequency doubling crystals and has potential applications in nonlinear optical devices. In addition, field effect transistor devices based on the 2D Te nanoflakes were fabricated and exhibited excellent electrical properties with high mobility of 379 cm² V⁻¹ s⁻¹.

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High-quality 2D Te nanoflakes were directly synthesized by CVT method

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The growth mechanisms of 2D Te nanoflakes were systematically studied

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2D Te nanoflakes have potential applications in nonlinear optical devices

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2D Te nanoflakes-based FETs exhibit high mobility of ∼379 cm² V⁻¹ s⁻¹

Electrical properties and charge compensation mechanisms of Cr-doped rutile, TiO2

Cr-doped rutile, Ti_1-xCr_xO_2-x/2-δ, powders and ceramics with 0 ≤ x ≤ 0.05 were prepared by solid state reaction and sintered at 1350 °C. Cr distribution is homogeneous with no evidence of either segregation or crystallographic shear plane formation. For high x compositions, >∼0.01, Cr substitution is charge-compensated ionically by oxygen vacancies with two Cr³⁺ ions for each vacancy and the materials are electronically insulating. For low x compositions, the materials are semiconducting. This is attributed to a new charge compensation mechanism involving Ti³⁺ ions created in response to the local electroneutrality requirement for two trivalent cations to be in close proximity to each oxygen vacancy. At very low dopant concentrations, ≪0.01, the dopants are well-separated and instead, some Ti³⁺ ions act as a second dopant to preserve local electroneutrality. For intermediate x compositions, a core-shell structure is proposed consisting of semiconducting grain interiors containing Ti³⁺ ions surrounded by a more insulating shell with Cr³⁺ ions as the only acceptor dopant. Lattice parameters show unusual, non-linear Vegard's law behaviour characterised by a maximum in cell volume at intermediate x ∼ 0.005, that is attributed to the composition-dependent presence of Ti³⁺ ions.

Advances in Rare-Earth Tritelluride Quantum Materials: Structure, Properties, and Synthesis

A distinct class of 2D layered quantum materials with the chemical formula of RTe3 (R = lanthanide) has gained significant attention owing to the occurrence of collective quantum states, superconductivity, charge density waves (CDW), spin density waves, and other advanced quantum properties. To study the Fermi surface nesting driven CDW formation, the layered RTe3 family stages an excellent low dimensional genre system. In addition to the primary energy gap feature observed at higher energy, optical spectroscopy study on some RTe3 evidence a second CDW energy gap structure indicating the occurrence of multiple CDW ordering even with light and intermediate RTe3 compounds. Here, a comprehensive review of the fundamentals of RTe3 layered tritelluride materials is presented with a special focus on the recent advances made in electronic structure, CDW transition, superconductivity, magnetic properties of these unique quantum materials. A detailed description of successful synthesis routes including the flux method, self-flux method, and CVT along with potential applications is summarized.

Chemistry of Quantum Spin Liquids

Quantum spin liquids are an exciting playground for exotic physical phenomena and emergent many-body quantum states. The realization and discovery of quantum spin liquid candidate materials and associated phenomena lie at the intersection of solid-state chemistry, condensed matter physics, and materials science and engineering. In this review, we provide the current status of the crystal chemistry, synthetic techniques, physical properties, and research methods in the field of quantum spin liquids. We highlight a number of specific quantum spin liquid candidate materials and their structure-property relationships, elucidating their fascinating behavior and connecting it to the intricacies of their structures. Furthermore, we share our thoughts on defects and their inevitable presence in materials, of which quantum spin liquids are no exception, which can complicate the interpretation of characterization of these materials, and urge the community to extend their attention to materials preparation and data analysis, cognizant of the impact of defects. This review was written with the intention of providing guidance on improving the materials design and growth of quantum spin liquids, and to paint a picture of the beauty of the underlying chemistry of this exciting class of materials.

Expanding the family of mineral-like anhydrous alkali copper sulfate framework structures: new phases, topological analysis and evaluation of ion migration potentialities

Two novel compounds, K2Cu3(SO4)4 and KNaCu(SO4)2, were synthesized. The crystal structure of K2Cu3(SO4)4 is based on a [Cu3(SO4)4]2− framework with relatively simple bond topology, but with four different CuO n polyhedron geometries. The K+ cations reside in the pores of the framework. The [Cu(SO4)2]2− framework in KNaCu(SO4)2 encloses large elliptical channels running along [001]. Larger channels are occupied by K+, whereas smaller ones are filled by Na+. The bond-valence energy landscape (BVEL) approach has been demonstrated to be a useful method for the prediction of the mobility of alkali metal ions in various structures. By means of this approach, the threshold energies at which isosurfaces begin to percolate as well as the directions of possible ion migration in the structures were determined. The modelling of ion migration maps by the analysis of the procrystal electron-density distribution was used to rapidly identify ion migration pathways and limiting barriers between particular crystallographic sites in the structures under consideration. Its consistency and complementarity with the BVEL method have been demonstrated. Both approaches revealed a relatively low ion threshold percolation and migration barriers in the cryptochalcite-type structures [cryptochalcite: K2Cu5O(SO4)5]. Hence, one may assume that its 3D framework type is suited for ion transport applications. The review of all known members of the groups of anhydrous copper sulfates did not reveal a correlation between the porosity of the framework structures and a manifestation of ion conduction properties.

Micro-Scale Device-An Alternative Route for Studying the Intrinsic Properties of Solid-State Materials: The Case of Semiconducting TaGeIr

An efficient application of a material is only possible if we know its physical and chemical properties, which is frequently obstructed by the presence of micro- or macroscopic inclusions of secondary phases. While sometimes a sophisticated synthesis route can address this issue, often obtaining pure material is not possible. One example is TaGeIr, which has highly sample-dependent properties resulting from the presence of several impurity phases, which influence electronic transport in the material. The effect of these minority phases was avoided by manufacturing, with the help of focused-ion-beam, a μm-scale device containing only one phase-TaGeIr. This work provides evidence for intrinsic semiconducting behavior of TaGeIr and serves as an example of selective single-domain device manufacturing. This approach gives a unique access to the properties of compounds that cannot be synthesized in single-phase form, sparing costly and time-consuming synthesis efforts.

Iodine Vapor Transport-Triggered Preferential Growth of Chevrel Mo6S8 Nanosheets for Advanced Multivalent Batteries

Owing to its unique structure, Chevrel phase (CP) is a promising candidate for applications in rechargeable multivalent (Mg and Al) batteries. However, its wide applications are severely limited by time-consuming and complex synthesis processes, accompanied by uncontrollable growth and large particle sizes, which will magnify the charge trapping effect and lower the electrochemical performance. Here, an iodine vapor transport reaction (IVT) is proposed to obtain large-scale and highly pure Mo₆S₈ nanosheets, in which iodine helps to regulate the growth kinetics and induce the preferential growth of Mo₆S₈, as a typical three-dimensional material, to form nanosheets. When applied in rechargeable multivalent (Mg and Al) batteries, Mo₆S₈ nanosheets show very fast kinetics owing to the short diffusion distance, thereby exhibiting lower polarization, higher capacities, and better low-temperature performance (up to -40 °C) compared to that of microparticles obtained via the conventional method. It is anticipated that Mo₆S₈ nanosheets would boost the application of Chevrel phase, especially in areas of energy storage and catalysis, and the IVT reaction would be generalized to a wide range of inorganic compound nanosheets.

Seeded growth of high-quality transition metal dichalcogenide single crystals via chemical vapor transport

Seeded chemical vapor transport growth gives high-quality and millimeter-sized transition metal dichalcogenide single crystals in a short period.

pH-Dependent Structure-Activity Relationship of Polyaniline-Intercalated FeOCl for Heterogeneous Fenton Reactions

In this study, we prepared polyaniline-intercalated iron oxychloride (FeOCl-PANI) by aqueous intercalation method to use it as a Fenton-like catalyst that was then assessed in terms of behavior of intercalation, structural evolution, Fenton-like activity, and catalytic mechanism. Gel-permeation chromatography demonstrated that the molecular weight (polymerization extent) of polyaniline fragment gradually increased with the increase of intercalation time. Interestingly, the polyaniline-intercalated materials with varying intercalation times exhibited distinctly different Fenton-like activity trends under acidic (pH 4) and neutral (pH 7) conditions. Specifically, Fenton-like degradation is favored with a shorter intercalation time under acidic conditions, while it is preferred with a longer intercalation time under neutral pH values. We propose that an additional pH-dependent charging of FeOCl-PANI with different polymerization extents of the intercalated polyaniline promotes a switch in the contaminant degradation pathway, leading to opposite trends in observable activity at different pH values. As a class of typical layered metal chalcogenohalides (MeAX, A = O, S, Se, X = Cl, Br, I), FeOCl-PANI is expected to provide new insights into the development of other similar materials. This work could be useful to further understand the H₂O₂ heterogeneous activation behavior, which is of significance to the application of iron-based heterogeneous Fenton oxidation.

Chemical Vapor Transport Reactions for Synthesizing Layered Materials and Their 2D Counterparts

2D materials, namely thin layers of layered materials, are attracting much attention because of their unique electronic, optical, thermal, and catalytic properties for wide applications. To advance both the fundamental studies and further practical applications, the scalable and controlled synthesis of large-sized 2D materials is desired, while there still lacks ideal approaches. Alternatively, the chemical vapor transport reaction is an old but powerful technique, and is recently adopted for synthesizing 2D materials, producing bulk crystals of layered materials or corresponding 2D films. Herein, recent advancements in synthesizing both bulk layered and 2D materials by chemical vapor transport reactions are summarized. Beginning with a brief introduction of the fundamentals of chemical vapor transport reactions, chemical vapor transport-based syntheses of bulk layered and 2D materials, mainly exampled by transition metal dichalcogenides and black phosphorus, are reviewed. Particular attention is paid to important factors that can influence the reactions and the growth mechanisms of black phosphorus. Finally, perspectives about the chemical vapor transport-based synthesis of 2D materials are discussed, intending to redraw attentions on chemical vapor transport reactions.

ℇ-RbCuCl3, a new polymorph of rubidium copper trichloride: synthesis, structure and structural complexity

A novel polymorph of RbCuCl₃ (rubidium copper trichloride), denoted ℇ-RbCuCl₃, has been prepared by chemical vapour transport (CVT) from a mixture of CuO, CuCl₂, SeO₂ and RbCl. The new polymorph crystallizes in the orthorhombic space group C222₁. The crystal structure is based on an octahedral framework of the 4H perovskite type. The Rb⁺ and Cl^- ions form a four-layer closest-packing array with an ABCB sequence. The Cu²⁺ cations reside in octahedral cavities with a typical [4 + 2]-Jahn-Teller-distorted coordination, forming four short and two long Cu-Cl bonds. ℇ-RbCuCl₃ is the most structurally complex and most dense among all currently known RbCuCl₃ polymorphs, which allows us to suggest that it is a high-pressure phase, which is unstable under ambient conditions.

Ferromagnetism in CVT grown tungsten diselenide single crystals with nickel doping

Two dimensional (2D) single crystal layered transition materials have had extensive consideration owing to their interesting magnetic properties, originating from their lattices and strong spin-orbit coupling, which make them of vital importance for spintronic applications. Herein, we present synthesis of a highly crystalline tungsten diselenide layered single crystal grown by chemical vapor transport technique and doped with nickel (Ni) to tailor its magnetic properties. The pristine WSe₂ single crystal and Ni-doped crystal were characterized and analyzed for magnetic properties using both experimental and computational aspects. It was found that the magnetic behavior of the 2D layered WSe₂ crystal changed from diamagnetic to ferromagnetic after Ni-doping at all tested temperatures. Moreover, first principle density functional theory (DFT) calculations further confirmed the origin of room temperature ferromagnetism of Ni-doped WSe₂, where the d-orbitals of the doped Ni atom promoted the spin moment and thus largely contributed to the magnetism change in the 2D layered material.

Heavy pnictogen chalcohalides: the synthesis, structure and properties of these rediscovered semiconductors

Heavy pnictogen chalcohalides offer various shades from the same palette, like “Paysage” by Nicolas de Staël. Their versatility and tunability lead to a new world of possible applications.

Element allotropes and polyanion compounds of pnicogenes and chalcogenes: stability, mechanisms of formation, controlled synthesis and characterization

The application of the EnPhaSyn (theoretical Energy diagrams, experimental Phase formation, Synthesis and characterisation) concept is reviewed with respect to prediction of structures and stability of element allotropes and compound polymorphs, their phase formation and transition processes, and their directed synthesis, respectively. Therein, the relative energetical stability (En) of target compounds and possible decomposition are determined from quantum chemical DFT calculations. Phase formation and transition (Pha) is probed by a gas balance method, developed as high temperature gas balance concept. It helped to study the synthesis and stability range of several compounds experimentally. Applications of the concept and synthesis principles (Syn) of non-equilibrium phases are presented for allotropes of P, As, P1-xAsx, as well as binary and ternary compounds including the Zintl and Laves like phases IrPTe, NiP2, CoSbS, NiBiSe, Li0.2CdP2, Cu3CdCuP10, and Cd4Cu7As.

Oxocentered Cu(II) lead selenite honeycomb lattices hosting Cu(I)Cl2 groups obtained by chemical vapor transport reactions

Chemical vapor transport (CVT) reactions were used to prepare three modular mixed-valent Cu(I)-Cu(II) compounds, (Pb2Cu(2+)9O4)(SeO3)4(Cu(+)Cl(2))Cl5 (1), (PbCu(2+)5O2)(SeO3)2(Cu(+)Cl2)Cl3 (2), and (Pb(x)Cu(2+)(6-x)O2)(SeO3)2(Cu(+)Cl2)K(1-x)Cl(4-x) (x = 0.20) (3). In their crystal structures chains of anion-centered (OCu(2+)4) and (OCu(2+)3Pb) tetrahedra form honeycomb-like double layers with cavities occupied by linear [Cu(+)Cl2](-) groups.

Zone-Folded Phonons and the Commensurate-Incommensurate Charge-Density-Wave Transition in 1T-TaSe2 Thin Films

Bulk 1T-TaSe2 exhibits unusually high charge density wave (CDW) transition temperatures of 600 and 473 K below which the material exists in the incommensurate (I-CDW) and the commensurate (C-CDW) charge-density-wave phases, respectively. The (13)(1/2) × (13)(1/2) C-CDW reconstruction of the lattice coincides with new Raman peaks resulting from zone-folding of phonon modes from middle regions of the original Brillouin zone back to Γ. The C-CDW transition temperatures as a function of film thickness are determined from the evolution of these new Raman peaks, and they are found to decrease from 473 to 413 K as the film thicknesses decrease from 150 to 35 nm. A comparison of the Raman data with ab initio calculations of both the normal and C-CDW phases gives a consistent picture of the zone-folding of the phonon modes following lattice reconstruction. The Raman peak at ∼154 cm(-1) originates from the zone-folded phonons in the C-CDW phase. In the I-CDW phase, the loss of translational symmetry coincides with a strong suppression and broadening of the Raman peaks. The observed change in the C-CDW transition temperature is consistent with total energy calculations of bulk and monolayer 1T-TaSe2.