1
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Lin F, Cui J, Zhang Z, Wei Z, Hou X, Meng B, Liu Y, Tang J, Li K, Liao L, Hao Q. GaAs Nanowire Photodetectors Based on Au Nanoparticles Modification. MATERIALS (BASEL, SWITZERLAND) 2023; 16:1735. [PMID: 36837365 PMCID: PMC9967453 DOI: 10.3390/ma16041735] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Revised: 02/16/2023] [Accepted: 02/17/2023] [Indexed: 06/18/2023]
Abstract
A high-performance GaAs nanowire photodetector was fabricated based on the modification of Au nanoparticles (NPs). Au nanoparticles prepared by thermal evaporation were used to modify the defects on the surface of GaAs nanowires. Plasmons and Schottky barriers were also introduced on the surface of the GaAs nanowires, to enhance their light absorption and promote the separation of carriers inside the GaAs nanowires. The research results show that under the appropriate modification time, the dark current of GaAs nanowire photodetectors was reduced. In addition, photocurrent photodetectors increased from 2.39 × 10-10 A to 1.26 × 10-9 A. The responsivity of GaAs nanowire photodetectors correspondingly increased from 0.569 A∙W-1 to 3.047 A∙W-1. The reasons for the improvement of the photodetectors' performance after modification were analyzed through the energy band theory model. This work proposes a new method to improve the performance of GaAs nanowire photodetectors.
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Affiliation(s)
- Fengyuan Lin
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Jinzhi Cui
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Zhihong Zhang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Xiaobing Hou
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Bingheng Meng
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Yanjun Liu
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jilong Tang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Kexue Li
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Lei Liao
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
| | - Qun Hao
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
- School of Optoelectronics, Beijing Institute of Technology, Beijing 100081, China
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2
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Wang W, Wang W, Meng Y, Quan Q, Lai Z, Li D, Xie P, Yip S, Kang X, Bu X, Chen D, Liu C, Ho JC. Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS 2 Heterojunctions. ACS NANO 2022; 16:11036-11048. [PMID: 35758898 DOI: 10.1021/acsnano.2c03673] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The incapability of modulating the photoresponse of assembled heterostructure devices has remained a challenge for the development of optoelectronics with multifunctionality. Here, a gate-tunable and anti-ambipolar phototransistor is reported based on 1D GaAsSb nanowire/2D MoS2 nanoflake mixed-dimensional van der Waals heterojunctions. The resulting heterojunction shows apparently asymmetric control over the anti-ambipolar transfer characteristics, possessing potential to implement electronic functions in logic circuits. Meanwhile, such an anti-ambipolar device allows the synchronous adjustment of band slope and depletion regions by gating in both components, thereby giving rise to the gate-tunability of the photoresponse. Coupled with the synergistic effect of the materials in different dimensionality, the hybrid heterojunction can be readily modulated by the external gate to achieve a high-performance photodetector exhibiting a large on/off current ratio of 4 × 104, fast response of 50 μs, and high detectivity of 1.64 × 1011 Jones. Due to the formation of type-II band alignment and strong interfacial coupling, a prominent photovoltaic response is explored in the heterojunction as well. Finally, a visible image sensor based on this hybrid device is demonstrated with good imaging capability, suggesting the promising application prospect in future optoelectronic systems.
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Affiliation(s)
- Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Weijun Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - You Meng
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Quan Quan
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Zhengxun Lai
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Dengji Li
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Pengshan Xie
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - SenPo Yip
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 816-8580, Japan
| | - Xiaolin Kang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Xiuming Bu
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Dong Chen
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Chuntai Liu
- Key Laboratory of Advanced Materials Processing & Mold (Zhengzhou University), Ministry of Education, Zhengzhou 450002, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 816-8580, Japan
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
- Hong Kong Institute for Advanced Study, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
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3
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Zhang L, Li X, Cheng S, Shan C. Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III-V Nanostructures. MATERIALS 2022; 15:ma15051917. [PMID: 35269147 PMCID: PMC8911728 DOI: 10.3390/ma15051917] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/29/2021] [Revised: 02/23/2022] [Accepted: 02/24/2022] [Indexed: 12/02/2022]
Abstract
III–V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure–property relationship of III–V nanowires (NWs), this review mainly focuses on key procedures involved in the synthesis, fabrication, and application of III–V materials-based devices. We summarized the influence of synthesis methods on the nanostructures (NWs, nanodots and nanosheets) and presented the role of catalyst/droplet on their synthesis process through in situ techniques. To provide valuable guidance for device design, we further summarize the influence of structural parameters (phase, defects and orientation) on their electrical, optical, mechanical and electromechanical properties. Moreover, the dissolution and contact formation processes under heat, electric field and ionic water environments are further demonstrated at the atomic level for the evaluation of structural stability of III–V NWs. Finally, the promising applications of III–V materials in the energy-storage field are introduced.
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Affiliation(s)
| | - Xing Li
- Correspondence: (X.L.); (C.S.)
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4
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Li Z, Yuan X, Gao Q, Yang I, Li L, Caroff P, Allen M, Allen J, Tan HH, Jagadish C, Fu L. In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse. NANOTECHNOLOGY 2020; 31:244002. [PMID: 32131061 DOI: 10.1088/1361-6528/ab7c74] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Surface passivation of semiconductor nanowires (NWs) is important for their optoelectronic properties and applications. Here, the in situ passivation effect of an epitaxial InP shell and the corresponding photodetector performance is experimentally studied. Compared with the unpassivated GaAs1- x Sb x core-only NWs, the GaAs1- x Sb x /InP core/shell NWs have shown much stronger photoluminescence and cathodoluminescence intensities. Correspondingly, the fabricated single GaAs1- x Sb x /InP core/shell NW photodetector shows a responsivity of 325.1 A W-1 (@ 1.3 μm and 1.5 V) that is significantly enhanced compared to that of single GaAs1- x Sb x core-only NW photodetectors (143.5 A W-1), with a comparable detectivity of 4.7 × 1010 and 5.3 × 1010 cm√Hz/W, respectively. This is ascribed to the enhanced carrier mobility and carrier concentration by the in situ passivation, which lead to both higher photoconductivity and dark-conductivity. Our results show that in situ passivation is an effective approach for performance enhancement of GaAs1-x Sb x NW based optoelectronic devices.
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Affiliation(s)
- Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
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5
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Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors. MATERIALS 2020; 13:ma13061400. [PMID: 32204482 PMCID: PMC7142779 DOI: 10.3390/ma13061400] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/10/2020] [Revised: 03/14/2020] [Accepted: 03/17/2020] [Indexed: 12/13/2022]
Abstract
Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection is reviewed and compared, including material synthesis, representative types (under different operation principles and novel concepts), and device performance, as well as their challenges and future perspectives.
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6
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Chen X, Wang D, Wang T, Yang Z, Zou X, Wang P, Luo W, Li Q, Liao L, Hu W, Wei Z. Enhanced Photoresponsivity of a GaAs Nanowire Metal-Semiconductor-Metal Photodetector by Adjusting the Fermi Level. ACS APPLIED MATERIALS & INTERFACES 2019; 11:33188-33193. [PMID: 31415147 DOI: 10.1021/acsami.9b07891] [Citation(s) in RCA: 47] [Impact Index Per Article: 9.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Metal-semiconductor-metal (MSM)-structured GaAs-based nanowire photodetectors have been widely reported because they are promising as an alternative for high-performance devices. Owing to the Schottky built-in electric fields in the MSM structure photodetectors, enhancements in photoresponsivity can be realized. Thus, strengthening the built-in electric field is an efficacious way to make the detection capability better. In this study, we fabricate a single GaAs nanowire MSM photodetector with superior performance by doping-adjusting the Fermi level to strengthen the built-in electric field. An outstanding responsivity of 1175 A/W is obtained. This is two orders of magnitude better than the responsivity of the undoped sample. Scanning photocurrent mappings and simulations are performed to confirm that the enhancement in responsivity is because of the increase in the hole Schottky built-in electric field, which can separate and collect the photogenerated carriers more effectively. The eloquent evidence clearly proves that doping-adjusting the Fermi level has great potential applications in high-performance GaAs nanowire photodetectors and other functional photodetectors.
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Affiliation(s)
- Xue Chen
- State Key Laboratory of High Power Semiconductor Lasers , Changchun University of Science and Technology , Changchun 130022 , China
| | - Dengkui Wang
- State Key Laboratory of High Power Semiconductor Lasers , Changchun University of Science and Technology , Changchun 130022 , China
| | - Tuo Wang
- State Key Laboratory of High Power Semiconductor Lasers , Changchun University of Science and Technology , Changchun 130022 , China
| | - Zhenyu Yang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and Technology , Wuhan University , Wuhan 430072 , China
| | - Xuming Zou
- Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education School of Physics and Electronics , Hunan University , Changsha 410082 , China
| | - Peng Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , Shanghai 200083 , China
| | - Wenjin Luo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , Shanghai 200083 , China
| | - Qing Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , Shanghai 200083 , China
| | - Lei Liao
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and Technology , Wuhan University , Wuhan 430072 , China
- Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education School of Physics and Electronics , Hunan University , Changsha 410082 , China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , Shanghai 200083 , China
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Lasers , Changchun University of Science and Technology , Changchun 130022 , China
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7
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Gao Z, Sun J, Han M, Yin Y, Gu Y, Yang ZX, Zeng H. Recent advances in Sb-based III-V nanowires. NANOTECHNOLOGY 2019; 30:212002. [PMID: 30708362 DOI: 10.1088/1361-6528/ab03ee] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Owing to the high mobility, narrow bandgap, strong spin-orbit coupling and large g-factor, Sb-based III-V nanowires (NWs) attracted significant interests in high speed electronics, long-wavelength photodetectors and quantum superconductivity in the past decade. In this review, we aim to give an integrated summarization about the recent advances in binary as well as ternary Sb-based III-V NWs, starting from the fundamental properties, NWs growth mechanism, typical synthetic methods to their applications in transistors, photodetectors, and Majorana fermions detection. Up to now, famous NWs growth techniques of solid-source chemical vapor deposition (CVD), molecular beam epitaxy, metal organic vapor phase epitaxy and metal organic CVD etc have been adopted and developed for the controllable growth of Sb-based III-V NWs. Several parameters including heating temperature, III/V ratio of source materials, growth temperature, catalyst size and kinds, and growth substrate play important roles on the morphology, position, diameter distribution, growth orientation and crystal phase of Sb-based III-V NWs. Furthermore, we discuss the photoelectrical applications of Sb-based III-V NWs such as field-effect-transistors, tunnel diode, low-power inverter, and infrared detectors etc. Importantly, due to the strongest spin-orbit interaction and giant g-factor among all III-V semiconductors, InSb with the geometry of one-dimension NW is considered as the most promising candidate for the detection of Majorana fermions. In the end, we also summarize the main challenges remaining in the field and put forward some suggestions for the future development of Sb-based III-V NWs.
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Affiliation(s)
- Zhaofeng Gao
- Shenzhen Research Institute of Shandong University, Shenzhen, 518057, People's Republic of China. School of Microelectronics, Shandong University, Jinan, 250100, People's Republic of China
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8
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Li D, Lan C, Manikandan A, Yip S, Zhou Z, Liang X, Shu L, Chueh YL, Han N, Ho JC. Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires. Nat Commun 2019; 10:1664. [PMID: 30971702 PMCID: PMC6458123 DOI: 10.1038/s41467-019-09606-y] [Citation(s) in RCA: 28] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/16/2018] [Accepted: 03/19/2019] [Indexed: 11/16/2022] Open
Abstract
Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large-scale and highly-crystalline InxGa1−xSb NWs is still a challenge. Here, we achieve high-density and crystalline stoichiometric InxGa1−xSb (0.09 < x < 0.28) NWs on amorphous substrates with the uniform phase-purity and <110 >-orientation via chemical vapor deposition. The as-prepared NWs show excellent electrical and optoelectronic characteristics, including the high hole mobility (i.e. 463 cm2 V−1 s−1 for In0.09Ga0.91Sb NWs) as well as broadband and ultrafast photoresponse over the visible and infrared optical communication region (1550 nm). Specifically, the In0.28Ga0.72Sb NW device yields efficient rise and decay times down to 38 and 53 μs, respectively, along with the responsivity of 6000 A W−1 and external quantum efficiency of 4.8 × 106 % towards 1550 nm regime. High-performance NW parallel-arrayed devices can also be fabricated to illustrate their large-scale device integrability for next-generation, ultrafast, high-responsivity and broadband photodetectors. The application of ternary nanowires (NWs) in optoelectronics has been hindered by difficulties in producing high quality NWs on silicon substrates. Here, the authors report on InxGa1-xSb NWs exhibiting simultaneously high hole mobility, responsivity, and fast response times in the infrared regime.
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Affiliation(s)
- Dapan Li
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.,Shenzhen Research Institute, City University of Hong Kong, 518057, Shenzhen, P.R. China
| | - Changyong Lan
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.,School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, 610054, Chengdu, P.R. China
| | - Arumugam Manikandan
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - SenPo Yip
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.,Shenzhen Research Institute, City University of Hong Kong, 518057, Shenzhen, P.R. China.,State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Ziyao Zhou
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.,Shenzhen Research Institute, City University of Hong Kong, 518057, Shenzhen, P.R. China
| | - Xiaoguang Liang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.,Shenzhen Research Institute, City University of Hong Kong, 518057, Shenzhen, P.R. China
| | - Lei Shu
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.,Shenzhen Research Institute, City University of Hong Kong, 518057, Shenzhen, P.R. China
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Ning Han
- State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, 100190, Beijing, P. R. China.
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR. .,Shenzhen Research Institute, City University of Hong Kong, 518057, Shenzhen, P.R. China. .,State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.
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9
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Chen X, Xia N, Yang Z, Gong F, Wei Z, Wang D, Tang J, Fang X, Fang D, Liao L. Analysis of the influence and mechanism of sulfur passivation on the dark current of a single GaAs nanowire photodetector. NANOTECHNOLOGY 2018; 29:095201. [PMID: 29297469 DOI: 10.1088/1361-6528/aaa4d6] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Nanowire photodetectors, which have the advantages of fast response and high photoelectric conversion efficiency, can be widely applied in various industries. However, the rich surface states result in large dark current and can hinder the development of high-performance nanowire photodetectors. In this paper, the influence and mechanism of sulfur surface passivation on the dark current of a single GaAs nanowire photodetector have been studied. The dark current is significantly reduced by about 30 times after surface passivation. We confirm that the origin of the reduction of dark current is the decrease in the surface state density. As a result, a single GaAs nanowire photodetector with low dark current of 7.18 × 10-2 pA and high detectivity of 9.04 × 1012 cmHz0.5W-1 has been achieved. A simple and convenient way to realize high-performance GaAs-based photodetectors has been proposed.
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Affiliation(s)
- Xue Chen
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, People's Republic of China
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10
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Xie C, Yan F. Flexible Photodetectors Based on Novel Functional Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1701822. [PMID: 28922544 DOI: 10.1002/smll.201701822] [Citation(s) in RCA: 91] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2017] [Revised: 07/08/2017] [Indexed: 06/07/2023]
Abstract
Flexible photodetectors have attracted a great deal of research interest in recent years due to their great possibilities for application in a variety of emerging areas such as flexible, stretchable, implantable, portable, wearable and printed electronics and optoelectronics. Novel functional materials, including materials with zero-dimensional (0D) and one-dimensional (1D) inorganic nanostructures, two-dimensional (2D) layered materials, organic semiconductors and perovskite materials, exhibit appealing electrical and optoelectrical properties, as well as outstanding mechanical flexibility, and have been widely studied as building blocks in cost-effective flexible photodetection. Here, we comprehensively review the outstanding performance of flexible photodetectors made from these novel functional materials reported in recent years. The photoresponse characteristics and flexibility of the devices will be discussed systematically. Summaries and challenges are provided to guide future directions of this vital research field.
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Affiliation(s)
- Chao Xie
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, 230009, China
| | - Feng Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
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11
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Yang ZX, Liu L, Yip S, Li D, Shen L, Zhou Z, Han N, Hung TF, Pun EYB, Wu X, Song A, Ho JC. Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, ⟨111⟩-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition. ACS NANO 2017; 11:4237-4246. [PMID: 28355076 DOI: 10.1021/acsnano.7b01217] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Using CMOS-compatible Pd catalysts, we demonstrated the formation of high-mobility ⟨111⟩-oriented GaSb nanowires (NWs) via vapor-solid-solid (VSS) growth by surfactant-assisted chemical vapor deposition through a complementary experimental and theoretical approach. In contrast to NWs formed by the conventional vapor-liquid-solid (VLS) mechanism, cylindrical-shaped Pd5Ga4 catalytic seeds were present in our Pd-catalyzed VSS-NWs. As solid catalysts, stoichiometric Pd5Ga4 was found to have the lowest crystal surface energy and thus giving rise to a minimal surface diffusion as well as an optimal in-plane interface orientation at the seed/NW interface for efficient epitaxial NW nucleation. These VSS characteristics led to the growth of slender NWs with diameters down to 26.9 ± 3.5 nm. Over 95% high crystalline quality NWs were grown in ⟨111⟩ orientation for a wide diameter range of between 10 and 70 nm. Back-gated field-effect transistors (FETs) fabricated using the Pd-catalyzed GaSb NWs exhibit a superior peak hole mobility of ∼330 cm2 V-1 s-1, close to the mobility limit for a NW channel diameter of ∼30 nm with a free carrier concentration of ∼1018 cm-3. This suggests that the NWs have excellent homogeneity in phase purity, growth orientation, surface morphology and electrical characteristics. Contact printing process was also used to fabricate large-scale assembly of Pd-catalyzed GaSb NW parallel arrays, confirming the potential constructions and applications of these high-performance electronic devices.
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Affiliation(s)
- Zai-Xing Yang
- Center of Nanoelectronics and School of Microelectronics, Shandong University , Jinan 250100, PR China
| | - Lizhe Liu
- Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics, Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University , Nanjing 210093, PR China
| | - SenPo Yip
- State Key Laboratory of Millimeter Waves, City University of Hong Kong , 83 Tat Chee Avenue, Kowloon, Hong Kong
| | | | - Lifan Shen
- State Key Laboratory of Millimeter Waves, City University of Hong Kong , 83 Tat Chee Avenue, Kowloon, Hong Kong
| | | | - Ning Han
- State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences , Beijing 100190, PR China
| | | | - Edwin Yue-Bun Pun
- State Key Laboratory of Millimeter Waves, City University of Hong Kong , 83 Tat Chee Avenue, Kowloon, Hong Kong
| | - Xinglong Wu
- Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics, Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University , Nanjing 210093, PR China
| | - Aimin Song
- Center of Nanoelectronics and School of Microelectronics, Shandong University , Jinan 250100, PR China
- School of Electrical and Electronic Engineering, University of Manchester , Manchester M13 9PL, U.K
| | - Johnny C Ho
- State Key Laboratory of Millimeter Waves, City University of Hong Kong , 83 Tat Chee Avenue, Kowloon, Hong Kong
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12
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Zheng Z, Gan L, Zhang J, Zhuge F, Zhai T. An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2017; 4:1600316. [PMID: 28331785 PMCID: PMC5357981 DOI: 10.1002/advs.201600316] [Citation(s) in RCA: 48] [Impact Index Per Article: 6.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2016] [Revised: 10/24/2016] [Indexed: 05/21/2023]
Abstract
ZnO nanostructure-based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.
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Affiliation(s)
- Zhi Zheng
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Lin Gan
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Jianbing Zhang
- School of Optical and Electronic InformationHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Fuwei Zhuge
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
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Lou Z, Shen G. Flexible Photodetectors Based on 1D Inorganic Nanostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2016; 3:1500287. [PMID: 27774404 PMCID: PMC5064608 DOI: 10.1002/advs.201500287] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/23/2015] [Revised: 09/18/2015] [Indexed: 05/21/2023]
Abstract
Flexible photodetectors with excellent flexibility, high mechanical stability and good detectivity, have attracted great research interest in recent years. 1D inorganic nanostructures provide a number of opportunities and capabilities for use in flexible photodetectors as they have unique geometry, good transparency, outstanding mechanical flexibility, and excellent electronic/optoelectronic properties. This article offers a comprehensive review of several types of flexible photodetectors based on 1D nanostructures from the past ten years, including flexible ultraviolet, visible, and infrared photodetectors. High-performance organic-inorganic hybrid photodetectors, as well as devices with 1D nanowire (NW) arrays, are also reviewed. Finally, new concepts of flexible photodetectors including piezophototronic, stretchable and self-powered photodetectors are examined to showcase the future research in this exciting field.
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Affiliation(s)
- Zheng Lou
- State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P.R. China
| | - Guozhen Shen
- State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P.R. China
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Zhang Q, Li H, Gan L, Ma Y, Golberg D, Zhai T. In situ fabrication and investigation of nanostructures and nanodevices with a microscope. Chem Soc Rev 2016; 45:2694-713. [DOI: 10.1039/c6cs00161k] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/30/2023]
Abstract
The widespread availability of nanostructures and nanodevices has placed strict requirements on their comprehensive characterization.
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Affiliation(s)
- Qi Zhang
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology (HUST)
- Wuhan 430074
- P. R. China
| | - Huiqiao Li
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology (HUST)
- Wuhan 430074
- P. R. China
| | - Lin Gan
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology (HUST)
- Wuhan 430074
- P. R. China
| | - Ying Ma
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology (HUST)
- Wuhan 430074
- P. R. China
| | - Dmitri Golberg
- International Center for Materials Nanoarchitectonics (MANA)
- National Institute for Materials Science (NIMS)
- Ibaraki 305-0044
- Japan
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology (HUST)
- Wuhan 430074
- P. R. China
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Huang W, Gan L, Li H, Ma Y, Zhai T. 2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronics. CrystEngComm 2016. [DOI: 10.1039/c5ce01986a] [Citation(s) in RCA: 143] [Impact Index Per Article: 17.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
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